TWI480919B - A plasma supply unit and a substrate processing device including the same - Google Patents

A plasma supply unit and a substrate processing device including the same Download PDF

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Publication number
TWI480919B
TWI480919B TW101130964A TW101130964A TWI480919B TW I480919 B TWI480919 B TW I480919B TW 101130964 A TW101130964 A TW 101130964A TW 101130964 A TW101130964 A TW 101130964A TW I480919 B TWI480919 B TW I480919B
Authority
TW
Taiwan
Prior art keywords
plasma
space
inflow
discharge space
chamber
Prior art date
Application number
TW101130964A
Other languages
English (en)
Chinese (zh)
Other versions
TW201320143A (zh
Inventor
Hyounjoon Cho
Original Assignee
Psk Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Psk Inc filed Critical Psk Inc
Publication of TW201320143A publication Critical patent/TW201320143A/zh
Application granted granted Critical
Publication of TWI480919B publication Critical patent/TWI480919B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW101130964A 2011-11-04 2012-08-27 A plasma supply unit and a substrate processing device including the same TWI480919B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110114350A KR20130049364A (ko) 2011-11-04 2011-11-04 플라스마 공급 유닛 및 이를 포함하는 기판 처리 장치

Publications (2)

Publication Number Publication Date
TW201320143A TW201320143A (zh) 2013-05-16
TWI480919B true TWI480919B (zh) 2015-04-11

Family

ID=48619870

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101130964A TWI480919B (zh) 2011-11-04 2012-08-27 A plasma supply unit and a substrate processing device including the same

Country Status (3)

Country Link
JP (1) JP2013098172A (ja)
KR (1) KR20130049364A (ja)
TW (1) TWI480919B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689227B (zh) * 2015-05-22 2020-03-21 日商日立全球先端科技股份有限公司 電漿處理裝置及使用彼之電漿處理方法
TWI695904B (zh) * 2015-05-26 2020-06-11 日商日本製鋼所股份有限公司 原子層成長裝置以及原子層成長裝置排氣部

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101446632B1 (ko) * 2013-06-24 2014-10-06 피에스케이 주식회사 기판 처리 장치 및 방법
GB201318249D0 (en) * 2013-10-15 2013-11-27 Spts Technologies Ltd Plasma etching apparatus
WO2015106318A1 (en) * 2014-01-15 2015-07-23 Gallium Enterprises Pty Ltd Apparatus and method for the reduction of impurities in films
US10790119B2 (en) 2017-06-09 2020-09-29 Mattson Technology, Inc Plasma processing apparatus with post plasma gas injection
US11201036B2 (en) 2017-06-09 2021-12-14 Beijing E-Town Semiconductor Technology Co., Ltd Plasma strip tool with uniformity control
US20180358206A1 (en) * 2017-06-09 2018-12-13 Mattson Technology, Inc. Plasma Processing Apparatus
KR102225604B1 (ko) * 2019-12-18 2021-03-10 피에스케이 주식회사 기판 처리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059914A (ja) * 2001-08-21 2003-02-28 Hitachi Kokusai Electric Inc プラズマ処理装置
CN101379213A (zh) * 2006-02-10 2009-03-04 应用材料股份有限公司 面对等离子的壁的水蒸气钝化
KR20110110517A (ko) * 2010-04-01 2011-10-07 피에스케이 주식회사 플라즈마 처리 장치 및 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059914A (ja) * 2001-08-21 2003-02-28 Hitachi Kokusai Electric Inc プラズマ処理装置
CN101379213A (zh) * 2006-02-10 2009-03-04 应用材料股份有限公司 面对等离子的壁的水蒸气钝化
KR20110110517A (ko) * 2010-04-01 2011-10-07 피에스케이 주식회사 플라즈마 처리 장치 및 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689227B (zh) * 2015-05-22 2020-03-21 日商日立全球先端科技股份有限公司 電漿處理裝置及使用彼之電漿處理方法
TWI695904B (zh) * 2015-05-26 2020-06-11 日商日本製鋼所股份有限公司 原子層成長裝置以及原子層成長裝置排氣部

Also Published As

Publication number Publication date
KR20130049364A (ko) 2013-05-14
TW201320143A (zh) 2013-05-16
JP2013098172A (ja) 2013-05-20

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