TWI475573B - High sensitivity capacitive touch components of the process - Google Patents
High sensitivity capacitive touch components of the process Download PDFInfo
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- TWI475573B TWI475573B TW098123807A TW98123807A TWI475573B TW I475573 B TWI475573 B TW I475573B TW 098123807 A TW098123807 A TW 098123807A TW 98123807 A TW98123807 A TW 98123807A TW I475573 B TWI475573 B TW I475573B
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Description
本發明係有關一種電容式觸控元件,特別是關於一種提高感度的電容式觸控元件。The present invention relates to a capacitive touch element, and more particularly to a capacitive touch element for improving sensitivity.
電容式觸控技術之運作原理,係藉物件(例如手指或其他導體)接觸電容式觸控元件造成觸點處的感應層(touch sensor)的電容值變化,經由控制器定位出該觸點的位置。由於觸控元件的感應層係由導體製成,因此通常在感應層上覆蓋絕緣材質當作保護層(cover)保護該感應層。保護層的材質通常選用塑膠、玻璃、樹脂、等強韌物。The operation principle of the capacitive touch technology is to change the capacitance value of the touch sensor at the contact by contacting the capacitive touch element (such as a finger or other conductor), and positioning the contact via the controller. position. Since the sensing layer of the touch element is made of a conductor, the insulating layer is usually covered with an insulating material as a protective layer to protect the sensing layer. The material of the protective layer is usually made of plastic, glass, resin, and other tough materials.
圖1係手指接觸電容式觸控元件之示意圖,電容式觸控元件10是由感應層12及其上方覆蓋的保護層14組成。感應層12是導體,因此其與地端GND之間存有基本電容CBase 。保護層14是絕緣體,當手指16碰觸保護層14時,由於人體屬於導體且具有等同於接地的電位,因此感應層12與手指16之間將出現另一電容CPress 。在此情況下,感應層12可視為電容CPress 的上電極板,手指16可視為電容CPress 的下電極板且接地,中間的保護層14為電容CPress 的介電層。所以在手指16碰觸保護層14時,電容CPress 係與感應層12的基本電容CBase 並聯,造成整體的電容值增加。FIG. 1 is a schematic diagram of a finger contacting a capacitive touch element. The capacitive touch element 10 is composed of a sensing layer 12 and a protective layer 14 covered thereon. The sensing layer 12 is a conductor, so that there is a basic capacitance C Base between it and the ground GND. The protective layer 14 is an insulator. When the finger 16 touches the protective layer 14, since the human body belongs to the conductor and has a potential equal to the ground, another capacitance C Press will appear between the sensing layer 12 and the finger 16. In this case, the sensing layer 12 can be regarded as the upper electrode plate of the capacitor C Press , the finger 16 can be regarded as the lower electrode plate of the capacitor C Press and grounded, and the intermediate protective layer 14 is the dielectric layer of the capacitor C Press . Therefore, when the finger 16 touches the protective layer 14, the capacitance C Press is in parallel with the basic capacitance C Base of the sensing layer 12, resulting in an increase in the overall capacitance value.
圖2係控制器對圖1的觸控元件10充放電產生的電壓波形圖。假設以定電流I在一定的時間週期T對觸控元件10進行充放電,當手指16未接觸觸控元件10時,產生的電壓訊號是波形18;當手指16接觸觸控元件10時,總電容值增加,產生的電壓訊號變成波形20。電壓訊號經過低通濾波器後取得其直流位準,假設波形18的直流位準22為V,波形20的直流位準24為V-△V。由於定電流I與充放電時間T固定,所以不管手指16有無接觸觸控元件10,其總電荷Q是相同的,因此FIG. 2 is a voltage waveform diagram generated by the controller charging and discharging the touch element 10 of FIG. 1 . It is assumed that the touch element 10 is charged and discharged with a constant current I for a certain period of time T. When the finger 16 does not touch the touch element 10, the generated voltage signal is a waveform 18; when the finger 16 contacts the touch element 10, the total As the capacitance increases, the resulting voltage signal becomes waveform 20. After the voltage signal passes through the low-pass filter, the DC level is obtained. It is assumed that the DC level 22 of the waveform 18 is V, and the DC level 24 of the waveform 20 is V-ΔV. Since the constant current I and the charge and discharge time T are fixed, the total charge Q is the same regardless of whether the finger 16 contacts the touch element 10,
C=εγ εO A/d, 公式2其中,εγ εO 為介電層的介電常數,A為兩電極板的面積,d為兩電極板之間的距離。由公式2可知,欲增加CPress 的大小,可以減小感應層12與手指16之間的距離、增加感應層12的面積、或選擇高介電常數的保護層14。C = ε γ ε O A / d, where 2, ε γ ε O is the dielectric constant of the dielectric layer, A is the area of the two electrode plates, and d is the distance between the two electrode plates. As can be seen from Equation 2, in order to increase the size of the C Press , the distance between the sensing layer 12 and the finger 16 can be reduced, the area of the sensing layer 12 can be increased, or the protective layer 14 having a high dielectric constant can be selected.
提升電容式觸控元件感度的習知方法有:藉由電路佈線技巧降低感應層12的基本電容CBase 、使用介電常數較大的保護層14(例如玻璃的介電常數約為5~7)、使用厚度較薄的保護層14等。但感應層14的重新設計較為麻煩,且因電容等級差異,改善效果較不顯著。保護層14的厚度有時因為保護需求及使用設備的規格已定而無法更改。A conventional method for improving the sensitivity of a capacitive touch element is to reduce the basic capacitance C Base of the sensing layer 12 by using a circuit wiring technique, and to use a protective layer 14 having a large dielectric constant (for example, a dielectric constant of glass is about 5 to 7). ), a thin protective layer 14 or the like is used. However, the redesign of the sensing layer 14 is cumbersome, and the improvement effect is less significant due to the difference in capacitance levels. The thickness of the protective layer 14 may sometimes not be changed due to the protection requirements and the specifications of the equipment used.
本發明的目的之一,在於提出一種簡單、低成本的解決方案來提高電容式觸控元件的感度。One of the objects of the present invention is to provide a simple, low-cost solution to improve the sensitivity of capacitive touch elements.
本發明的目的之一,在於提出一種高感度電容式觸控元件及其製程。One of the objects of the present invention is to provide a high-sensitivity capacitive touch element and a process thereof.
根據本發明,一種高感度電容式觸控元件包含一感應層、一高介電材料膜在該感應層上、以及一保護層在該高介電材料膜上。In accordance with the present invention, a high sensitivity capacitive touch element includes a sensing layer, a high dielectric material film on the sensing layer, and a protective layer over the high dielectric material film.
根據本發明,一種高感度電容式觸控元件包含一感應層、一保護層在該感應層上、以及一高介電材料膜在該保護層上。According to the present invention, a high-sensitivity capacitive touch element includes a sensing layer, a protective layer on the sensing layer, and a high dielectric material film on the protective layer.
根據本發明,一種高感度電容式觸控元件包含一感應層、一第一高介電材料膜在該感應層上、一保護層在該第一高介電材料膜上、以及一第二高介電材料膜在該保護層上。According to the present invention, a high-sensitivity capacitive touch element includes a sensing layer, a first high dielectric material film on the sensing layer, a protective layer on the first high dielectric material film, and a second high A dielectric material film is on the protective layer.
根據本發明,一種高感度電容式觸控元件的製程包含準備一感應層及一保護層、形成一高介電材料膜於該感應層上、以及將該保護層貼覆在該高介電材料膜上。According to the present invention, a process for a high-sensitivity capacitive touch device includes preparing a sensing layer and a protective layer, forming a high dielectric material film on the sensing layer, and attaching the protective layer to the high dielectric material. On the membrane.
根據本發明,一種高感度電容式觸控元件的製程包含準備一感應層及一保護層、形成一高介電材料膜在該保護層上、以及將該高介電材料膜貼覆在該感應層上。According to the present invention, a process for a high-sensitivity capacitive touch device includes preparing a sensing layer and a protective layer, forming a high dielectric material film on the protective layer, and attaching the high dielectric material film to the sensing On the floor.
根據本發明,一種高感度電容式觸控元件的製程包含準備一感應層及一保護層、形成一高介電材料膜在該保護層上、以及將該保護層貼覆在該感應層上。According to the present invention, a process for a high-sensitivity capacitive touch device includes preparing a sensing layer and a protective layer, forming a high dielectric material film on the protective layer, and attaching the protective layer to the sensing layer.
根據本發明,一種高感度電容式觸控元件的製程包含準備一感應層及一保護層、將該保護層貼覆在該感應層上、以及形成一高介電材料膜在該保護層上。According to the present invention, a process for a high-sensitivity capacitive touch device includes preparing a sensing layer and a protective layer, attaching the protective layer to the sensing layer, and forming a high dielectric material film on the protective layer.
根據本發明,一種高感度電容式觸控元件的製程包含準備一感應層及一保護層、形成兩高介電材料膜在該保護層的上下兩表面上、以及將該兩高介電材料膜其中之一貼覆在該感應層上。According to the present invention, a process for a high-sensitivity capacitive touch device includes preparing a sensing layer and a protective layer, forming two high dielectric material films on upper and lower surfaces of the protective layer, and forming the two high dielectric material films One of them is attached to the sensing layer.
根據本發明,一種高感度電容式觸控元件的製程包含準備一感應層及一保護層、形成一第一高介電材料膜在該感應層上及一第二高介電材料膜在該保護層上、以及將該保護層貼覆在該第一高介電材料膜上。According to the present invention, a process for a high-sensitivity capacitive touch device includes preparing a sensing layer and a protective layer, forming a first high dielectric material film on the sensing layer, and a second high dielectric material film in the protection And coating the protective layer on the first high dielectric material film.
形成該高介電材料膜的步驟可以使用物理性沉積、化學性沉積、塗佈、化學置換、浸泡或噴灑等方法,在真空或非真空環境下施行,並視需求做熱處理,或添加不同之溶劑與化合物。The step of forming the high dielectric material film may be performed in a vacuum or non-vacuum environment using physical deposition, chemical deposition, coating, chemical replacement, immersion or spraying, and heat treatment may be performed as needed, or different additions may be made. Solvents and compounds.
圖3係本發明的第一實施例,準備感應層12及保護層14,在感應層12上形成高介電材料膜26,接著再將保護層14貼覆在高介電材料膜26上。3 is a first embodiment of the present invention in which the sensing layer 12 and the protective layer 14 are prepared, a high dielectric material film 26 is formed on the sensing layer 12, and then the protective layer 14 is pasted on the high dielectric material film 26.
圖4係本發明的第二實施例,準備感應層12及保護層14,在保護層14上形成高介電材料膜26,再將保護層14翻轉,將高介電材料膜26貼覆在感應層12上。4 is a second embodiment of the present invention, in which the sensing layer 12 and the protective layer 14 are prepared, a high dielectric material film 26 is formed on the protective layer 14, and the protective layer 14 is flipped over, and the high dielectric material film 26 is pasted on On the sensing layer 12.
圖5係本發明的第三實施例,準備感應層12及保護層14,形成高介電材料膜28在保護層14上,再將保護層14貼覆在感應層12上。5 is a third embodiment of the present invention. The sensing layer 12 and the protective layer 14 are prepared, and a high dielectric material film 28 is formed on the protective layer 14, and the protective layer 14 is attached to the sensing layer 12.
圖6係本發明的第四實施例,準備感應層12及保護層14,在感應層12上貼覆保護層14後,再形成高介電材料膜28在保護層14上。6 is a fourth embodiment of the present invention. The sensing layer 12 and the protective layer 14 are prepared. After the protective layer 14 is attached to the sensing layer 12, a high dielectric material film 28 is formed on the protective layer 14.
圖7係本發明的第五實施例,準備感應層12及保護層14,形成兩高介電材料膜26及28在保護層14的上下兩表面上,再將高介電材料膜26貼覆在感應層12上。7 is a fifth embodiment of the present invention, in which the sensing layer 12 and the protective layer 14 are prepared, and two high dielectric material films 26 and 28 are formed on the upper and lower surfaces of the protective layer 14, and the high dielectric material film 26 is pasted. On the sensing layer 12.
圖8係本發明的第六實施例,準備感應層12及保護層14,形成一第一高介電材料膜26在感應層12上及一第二高介電材料膜28在保護層14上,再將保護層14貼覆在第一高介電材料膜26上。8 is a sixth embodiment of the present invention. The sensing layer 12 and the protective layer 14 are prepared to form a first high dielectric material film 26 on the sensing layer 12 and a second high dielectric material film 28 on the protective layer 14. The protective layer 14 is then pasted on the first high dielectric material film 26.
當物件碰觸本發明的電容式觸控元件時,由於該物件與感應層12間有一高介電材料膜26或兩高介電材料膜26及28存在,因此該碰觸引起的電容值變化量將增加,感度也跟著提升。When the object touches the capacitive touch element of the present invention, a high dielectric material film 26 or two high dielectric material films 26 and 28 are present between the object and the sensing layer 12, so that the capacitance value caused by the touch changes. The amount will increase and the sensitivity will increase.
感應層12、保護層14及高介電材料膜26及28可為具透光性或具非透光性。The sensing layer 12, the protective layer 14, and the high dielectric material films 26 and 28 may be light transmissive or non-translucent.
可以形成高介電材料膜26及28的材料很多,例如二氧化鈦(TiO2 )。二氧化鈦具有某些特性,使其適用於各種不同的應用。例如,二氧化鈦在紫外光區有較強吸收,因此可用於防紫外線產品上;二氧化鈦具有的能隙(bandgap)使其可做光觸媒;奈米結構的二氧化鈦具疏水性,可應用在自潔或防霧氣玻璃上;二氧化鈦具有高折射率,搭配光學設計可用於反射鏡;二氧化鈦的介電係數高達50~70,可以大幅增加CPress 的大小;在半導體領域中,二氧化鈦已經被廣泛的研究來取代二氧化矽,期望更有效的降低漏電;二氧化鈦具高硬度,因此耐刮;二氧化鈦本身有利於後製程加工;二氧化鈦的物理及化學性質穩定;二氧化鈦沒有毒性。二氧化鈦製成的高介電材料膜26及28可以是結晶、多晶及非晶三種狀態,厚度為至μm等級,製作的方法包含以物理性沉積、化學性沉積、塗佈、化學置換、浸泡、噴灑等方法將其鍍在感應層12或保護層14上。為了得到良好的覆蓋性和性質穩定的二氧化鈦膜,形成高介電材料膜26及28的過程可在真空或非真空環境下施行,並視需求做熱處理,或添加不同之溶劑與化合物,經過物理性或化學性反應後得到二氧化鈦膜。There are many materials that can form the high dielectric material films 26 and 28, such as titanium dioxide (TiO 2 ). Titanium dioxide has certain properties that make it suitable for a wide variety of applications. For example, titanium dioxide has a strong absorption in the ultraviolet region, so it can be used for UV protection products; titanium dioxide has a bandgap that can be used as a photocatalyst; titanium dioxide with a nanostructure is hydrophobic and can be used for self-cleaning or protection. On the fog glass; titanium dioxide has a high refractive index, and can be used for mirrors with optical design; titanium dioxide has a dielectric constant of 50 to 70, which can greatly increase the size of C Press ; in the field of semiconductors, titanium dioxide has been extensively studied to replace Cerium oxide is expected to reduce leakage more effectively; titanium dioxide has high hardness and is therefore scratch resistant; titanium dioxide itself is advantageous for post-processing; titanium dioxide is stable in physical and chemical properties; titanium dioxide is not toxic. The high dielectric material films 26 and 28 made of titanium dioxide may be in a crystalline, polycrystalline or amorphous state, and have a thickness of To the μm grade, the method of fabrication involves plating it onto the sensing layer 12 or the protective layer 14 by physical deposition, chemical deposition, coating, chemical replacement, soaking, spraying, and the like. In order to obtain a good coverage and stable titanium dioxide film, the process of forming the high dielectric material films 26 and 28 can be performed in a vacuum or non-vacuum environment, and heat treatment is required as needed, or different solvents and compounds are added, and physical A titanium dioxide film is obtained after a chemical or chemical reaction.
圖9係測試本發明的電容式觸控元件的感度的實驗,其中電容式觸控元件30的感應層12具有X軸感應線及Y軸感應線,二氧化鈦鍍在感應層12上形成高介電材料膜26,其上是保護層14,金手指32用來碰觸電容式觸控元件30。圖10係圖9的實驗中X軸感應線及Y軸感應線產生的感應量(ADC)。以下表1列出未鍍高介電材料膜及高介電材料膜的厚度為160、320、640、960時,測得的X軸感應線及Y軸感應線的感應量。參照圖10及表1,當金手指32未接觸電容式觸控元件30時,X軸感應線及Y軸感應線的感應量皆為10;當金手指32接觸電容式觸控元件30時,觸點的X軸感應線X10在未鍍高介電材料膜及高介電材料膜的厚度為160、320、640、960的情況下的感應量分別是108、112、93、117、163,而觸點的Y軸感應線Y7的感應量是127、136、105、125、167。從圖10的曲線明顯看出高介電材料膜大幅提高電容式觸控元件的感應量,亦即提高其感度。9 is an experiment for testing the sensitivity of the capacitive touch element of the present invention, wherein the sensing layer 12 of the capacitive touch element 30 has an X-axis sensing line and a Y-axis sensing line, and the titanium dioxide is plated on the sensing layer 12 to form a high dielectric. The material film 26 has a protective layer 14 thereon, and the gold finger 32 is used to touch the capacitive touch element 30. Figure 10 is the amount of inductance (ADC) generated by the X-axis sensing line and the Y-axis sensing line in the experiment of Figure 9. Table 1 below lists the thickness of the uncoated high dielectric film and the high dielectric film as 160. , 320 640 960 The measured amount of the X-axis sensing line and the Y-axis sensing line. Referring to FIG. 10 and Table 1, when the gold finger 32 does not contact the capacitive touch element 30, the sensing amounts of the X-axis sensing line and the Y-axis sensing line are all 10; when the gold finger 32 contacts the capacitive touch element 30, The X-axis sensing line X10 of the contact has a thickness of 160 in the uncoated high dielectric film and the high dielectric film. , 320 640 960 The amount of induction in the case of the case is 108, 112, 93, 117, 163, respectively, and the inductance of the Y-axis sensing line Y7 of the contact is 127, 136, 105, 125, 167. It is apparent from the graph of FIG. 10 that the high dielectric material film greatly increases the amount of inductance of the capacitive touch element, that is, increases its sensitivity.
高介電材料膜26及28不會影響保護層14對感應層12的保護,而且其厚度相對於保護層14的厚度是可以忽略的,因此也不影響設備的規格限制。The high dielectric material films 26 and 28 do not affect the protection of the sensing layer 12 by the protective layer 14, and the thickness thereof is negligible with respect to the thickness of the protective layer 14, and thus does not affect the specification limits of the device.
10...電容式觸控元件10. . . Capacitive touch element
12...感應層12. . . Sensing layer
14...保護層14. . . The protective layer
16...手指16. . . finger
18...電壓訊號的波形18. . . Voltage signal waveform
20...電壓訊號的波形20. . . Voltage signal waveform
22...電壓訊號的直流位準twenty two. . . DC level of voltage signal
24...電壓訊號的直流位準twenty four. . . DC level of voltage signal
26...高介電材料膜26. . . High dielectric material film
28...高介電材料膜28. . . High dielectric material film
30...電容式觸控元件30. . . Capacitive touch element
32...金手指32. . . Gold finger
圖1係手指接觸電容式觸控元件之示意圖;圖2係控制器對圖1的觸控元件充放電產生的電壓波形圖;圖3係本發明之第一實施例;圖4係本發明之第二實施例;圖5係本發明之第三實施例;圖6係本發明之第四實施例;圖7係本發明之第五實施例;圖8係本發明之第六實施例;圖9係測試本發明的電容式觸控元件的感度的實驗;圖10係圖9的實驗中X軸感應線及Y軸感應線產生的感應量。1 is a schematic diagram of a finger touching a capacitive touch element; FIG. 2 is a voltage waveform diagram generated by a controller for charging and discharging the touch element of FIG. 1; FIG. 3 is a first embodiment of the present invention; Figure 2 is a third embodiment of the present invention; Figure 6 is a fourth embodiment of the present invention; Figure 7 is a fifth embodiment of the present invention; Figure 8 is a sixth embodiment of the present invention; 9 series test of the sensitivity of the capacitive touch element of the present invention; FIG. 10 is the amount of inductance generated by the X-axis induction line and the Y-axis induction line in the experiment of FIG.
12...感應層12. . . Sensing layer
14...保護層14. . . The protective layer
26...高介電材料膜26. . . High dielectric material film
30...高感度電容式觸控元件30. . . High sensitivity capacitive touch element
32...金手指32. . . Gold finger
Claims (36)
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TW098123807A TWI475573B (en) | 2009-07-14 | 2009-07-14 | High sensitivity capacitive touch components of the process |
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TWI557625B (en) * | 2015-07-31 | 2016-11-11 | 映智科技股份有限公司 | Capacitive fingerprint identification device and manufacturing method thereof |
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US20130307810A1 (en) | 2012-05-15 | 2013-11-21 | Chimei Innolux Corporation | Capacitive touch panel device |
TWI489361B (en) * | 2013-02-08 | 2015-06-21 | Wintek Corp | Touch panel and manufacturing method thereof |
Citations (2)
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TWI272110B (en) * | 2005-05-30 | 2007-02-01 | Tpk Optical Solutions Corp | Touch panel with antiseptic layer and preparation process thereof |
TW200928931A (en) * | 2007-12-25 | 2009-07-01 | Cando Corp | Capacitive overcoat structure of touch panel and touch panel having the same |
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TWI272110B (en) * | 2005-05-30 | 2007-02-01 | Tpk Optical Solutions Corp | Touch panel with antiseptic layer and preparation process thereof |
TW200928931A (en) * | 2007-12-25 | 2009-07-01 | Cando Corp | Capacitive overcoat structure of touch panel and touch panel having the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI557625B (en) * | 2015-07-31 | 2016-11-11 | 映智科技股份有限公司 | Capacitive fingerprint identification device and manufacturing method thereof |
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