CN101989157A - High-sensitivity capacitance type touch assembly and manufacturing procedure thereof - Google Patents
High-sensitivity capacitance type touch assembly and manufacturing procedure thereof Download PDFInfo
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- CN101989157A CN101989157A CN2009101605994A CN200910160599A CN101989157A CN 101989157 A CN101989157 A CN 101989157A CN 2009101605994 A CN2009101605994 A CN 2009101605994A CN 200910160599 A CN200910160599 A CN 200910160599A CN 101989157 A CN101989157 A CN 101989157A
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Abstract
The invention relates to a high-sensitivity capacitance type touch assembly, which is characterized by comprising a sensing layer, a high dielectric material membrane and a protective layer, wherein the high dielectric material membrane is arranged on the sensing layer; and the protective layer is arranged on the high dielectric material membrane. The high-sensitivity capacitance type touch assembly and the manufacturing procedure of the invention have the advantage of greatly enhanced sensitivity.
Description
Technical field
The present invention relates to a kind of capacitance touching control assembly, specifically, is a kind of capacitance touching control assembly that improves sensitivity.
Background technology
The operation principles of capacitive touch control techniques is to cause the capacitance variation of the inductive layer (touch sensor) at place, contact by object (for example finger or other conductor) touch mode capacitive touch control component, orients the position of described contact via controller.Because the induction series of strata of touch control component are made by conductor, therefore on inductive layer, cover the insulation material usually and be used as protective seam (cover) and protect described inductive layer.The material of protective seam select for use usually plastics, glass, resin, etc. tough thing.
Fig. 1 is the synoptic diagram of finger touch mode capacitive touch control component, and capacitance touching control assembly 10 is made up of the protective seam 14 that inductive layer 12 and top thereof cover.Inductive layer 12 is conductors, so has basic capacitor C between itself and the ground end GND
Base Protective seam 14 is insulators, when finger 16 touches protective seam 14, owing to human body belongs to conductor and has the current potential that is equal to ground connection, so another capacitor C will occur between inductive layer 12 and the finger 16
PressIn the case, inductive layer 12 can be considered capacitor C
PressElectric pole plate, finger 16 can be considered capacitor C
PressLower electrode plate and ground connection, middle protective seam 14 is a capacitor C
PressDielectric layer.So when finger 16 touches protective seam 14, capacitor C
PressThe basic capacitor C of system and inductive layer 12
BaseParallel connection causes whole capacitance to increase.
Fig. 2 is controller discharges and recharges generation to the touch control component 10 of Fig. 1 a voltage oscillogram.Suppose in the regular hour period T touch control component 10 to be carried out charge and discharge to decide electric current I, when finger 16 did not contact touch control component 10, the voltage signal of generation was a waveform 18; When finger 16 contact touch control components 10, total capacitance value increases, and the voltage signal of generation becomes waveform 20.Voltage signal is obtained its direct current position standard through behind the low-pass filter, supposes that the direct current position accurate 22 of waveform 18 is V, and the direct current position of waveform 20 accurate 24 is V-Δ V.Owing to decide electric current I and discharge and recharge time T to fix, no matter finger 16 has contactless touch control component 10, its total electrical charge Q is identical, therefore
Basic capacitor C
BaseElectric capacity be the pF grade, capacitor C
PressElectric capacity be the fF grade.Δ V/V detects voltage variety Δ V more easily, and promptly so-called sensitivity promotes.By formula 1 as can be known, basic capacitor C
BaseDiminish or capacitor C
PressBecome and to promote sensitivity greatly.Basic capacitor C
BaseCan reduce by the skill of wiring (layout).Capacitor C
PressBe made of with protective seam 14 inductive layer 12, finger 16, the capacitance of plane-parallel capacitor is
C=ε
γε
OA/d, formula 2
Wherein, ε
γε
OBe the specific inductive capacity of dielectric layer, A is the area of two battery lead plates, and d is the distance between two battery lead plates.By formula 2 as can be known, desire increases C
PressSize, can reduce distance between 16 of inductive layer 12 and finger, increase the area of inductive layer 12 or select the protective seam 14 of high-k.
The known method that promotes capacitance touching control assembly sensitivity has: the basic capacitor C that reduces inductive layer 12 by the wiring skill
Base, use the thin protective seam 14 of the bigger protective seam 14 (for example the specific inductive capacity of glass is about 5～7) of specific inductive capacity, used thickness etc.But the redesign of inductive layer 14 comparatively bothers, and because of capacitance level difference, it is more not remarkable to improve effect.The thickness of protective seam 14 can't be changed because the specification of the protection demand and the equipment of use is fixed sometimes.
The method of therefore known capacitance touching control assembly and lifting sensitivity thereof exists above-mentioned all inconvenience and problem.
Summary of the invention
Purpose of the present invention is to propose a kind of simple, sensitivity that low cost solution improves the capacitance touching control assembly.
Another object of the present invention is to propose a kind of high sensitivity capacitance touching control assembly and processing procedure thereof.
For achieving the above object, technical solution of the present invention is:
A kind of high sensitivity capacitance touching control assembly is characterized in that comprising:
One inductive layer;
One high dielectric material film is arranged on the described inductive layer; And
One protective seam is arranged on the described high dielectric material film.
High sensitivity capacitance touching control assembly of the present invention can also be further achieved by the following technical measures.
Aforesaid high sensitivity capacitance touching control assembly, wherein said high dielectric material film has light transmission.
Aforesaid high sensitivity capacitance touching control assembly, wherein said high dielectric material film comprises titania.
Aforesaid high sensitivity capacitance touching control assembly, wherein said high dielectric material film has non-light transmittance.
Aforesaid high sensitivity capacitance touching control assembly, wherein said protective seam has light transmission.
Aforesaid high sensitivity capacitance touching control assembly, wherein said protective seam has non-light transmittance.
Aforesaid high sensitivity capacitance touching control assembly, wherein said inductive layer has light transmission.
Aforesaid high sensitivity capacitance touching control assembly, wherein said inductive layer has non-light transmittance.
A kind of high sensitivity capacitance touching control assembly is characterized in that comprising:
One inductive layer;
One protective seam is arranged on the described inductive layer; And
One high dielectric material film is arranged on the described protective seam.
Aforesaid high sensitivity capacitance touching control assembly, wherein said high dielectric material film has light transmission.
Aforesaid high sensitivity capacitance touching control assembly, wherein said high dielectric material film comprises titania.
Aforesaid high sensitivity capacitance touching control assembly, wherein said high dielectric material film has non-light transmittance.
Aforesaid high sensitivity capacitance touching control assembly, wherein said protective seam has light transmission.
Aforesaid high sensitivity capacitance touching control assembly, wherein said protective seam has non-light transmittance.
Aforesaid high sensitivity capacitance touching control assembly, wherein said inductive layer has light transmission.
Aforesaid high sensitivity capacitance touching control assembly, wherein said inductive layer has non-light transmittance.
A kind of high sensitivity capacitance touching control assembly comprises:
One inductive layer;
One first high dielectric material film is arranged on the described inductive layer;
One protective seam is arranged on the described first high dielectric material film; And
One second high dielectric material film is arranged on the described protective seam.
Aforesaid high sensitivity capacitance touching control assembly, wherein said high dielectric material film has light transmission.
Aforesaid high sensitivity capacitance touching control assembly, wherein said high dielectric material film comprises titania.
Aforesaid high sensitivity capacitance touching control assembly, wherein said high dielectric material film has non-light transmittance.
Aforesaid high sensitivity capacitance touching control assembly, wherein said protective seam has light transmission.
Aforesaid high sensitivity capacitance touching control assembly, wherein said protective seam has non-light transmittance.
Aforesaid high sensitivity capacitance touching control assembly, wherein said inductive layer has light transmission.
Aforesaid high sensitivity capacitance touching control assembly, wherein said inductive layer has non-light transmittance.
A kind of processing procedure of high sensitivity capacitance touching control assembly is characterized in that comprising following steps:
(a) prepare an inductive layer and a protective seam;
(b) form a high dielectric material film on described inductive layer; And
(c) described protective seam is pasted on described high dielectric material film.
The processing procedure of high sensitivity capacitance touching control assembly of the present invention can also be further achieved by the following technical measures.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step comprise use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described high dielectric material film on described inductive layers.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step comprise use titania and form described high dielectric material film.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step are included in and form described high dielectric material film under the vacuum environment.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step are contained in and form described high dielectric material film under non-vacuum environments.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly wherein more comprises described high dielectric material film is implemented thermal treatment.
A kind of processing procedure of high sensitivity capacitance touching control assembly comprises following steps:
(a) prepare an inductive layer and a protective seam;
(b) form a high dielectric material film on described protective seam; And
(c) described high dielectric material film is pasted on described high dielectric material film.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step comprise use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described high dielectric material film on described inductive layers.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step comprise use titania and form described high dielectric material film.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step are included in and form described high dielectric material film under the vacuum environment.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step are contained in and form described high dielectric material film under non-vacuum environments.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly wherein more comprises described high dielectric material film is implemented thermal treatment.
A kind of processing procedure of high sensitivity capacitance touching control assembly is characterized in that comprising:
(a) prepare an inductive layer and a protective seam;
(b) form a high dielectric material film on described protective seam; And
(c) described protective seam is pasted on described inductive layer.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step comprise use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described high dielectric material film on described inductive layers.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step comprise use titania and form described high dielectric material film.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step are included in and form described high dielectric material film under the vacuum environment.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step are contained in and form described high dielectric material film under non-vacuum environments.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly wherein more comprises described high dielectric material film is implemented thermal treatment.
A kind of processing procedure of high sensitivity capacitance touching control assembly is characterized in that comprising:
(a) prepare an inductive layer and a protective seam;
(b) described protective seam is pasted on described inductive layer; And
(c) form a high dielectric material film on described protective seam.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (c) step comprise use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described high dielectric material film on described inductive layers.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (c) step comprise use titania and form described high dielectric material film.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (c) step are included in and form described high dielectric material film under the vacuum environment.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (c) step are contained in and form described high dielectric material film under non-vacuum environments.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly wherein more comprises described high dielectric material film is implemented thermal treatment.
A kind of processing procedure of high sensitivity capacitance touching control assembly is characterized in that comprising:
(a) prepare an inductive layer and a protective seam;
(b) form two high dielectric material films on upper and lower two surfaces of described protective seam; And
(c) one of them pastes on described inductive layer with described two high dielectric material films.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step comprise use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described two high dielectric material films on described inductive layers.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step comprise use titania and form described two high dielectric material films.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step are included in and form described two high dielectric material films under the vacuum environment.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step are contained in and form described two high dielectric material films under non-vacuum environments.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly wherein more comprises described two high dielectric material films is implemented thermal treatment.
A kind of processing procedure of high sensitivity capacitance touching control assembly comprises:
(a) prepare an inductive layer and a protective seam;
(b) form one first high dielectric material film and reaching one second high dielectric material film on the described inductive layer on described protective seam; And
(c) described protective seam is pasted on the described first high dielectric material film.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step comprise use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described first and second high dielectric material film on described inductive layers.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step comprise use titania and form described first and second high dielectric material film.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step are included in and form described first and second high dielectric material film under the vacuum environment.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly, wherein said (b) step are contained in and form described first and second high dielectric material film under non-vacuum environments.
The processing procedure of aforesaid high sensitivity capacitance touching control assembly wherein more comprises described first and second high dielectric material film is implemented thermal treatment.
After adopting technique scheme, high sensitivity capacitance touching control assembly of the present invention and processing procedure thereof have the advantage that significantly improves sensitivity.
Description of drawings
Fig. 1 is the synoptic diagram of finger touch mode capacitive touch control component;
Fig. 2 is the voltage oscillogram of controller to the touch control component charge and discharge generation of Fig. 1;
Fig. 3 is a first embodiment of the present invention synoptic diagram;
Fig. 4 is a second embodiment of the present invention synoptic diagram;
Fig. 5 is a third embodiment of the present invention synoptic diagram;
Fig. 6 is a fourth embodiment of the present invention synoptic diagram;
Fig. 7 is a fifth embodiment of the present invention synoptic diagram;
Fig. 8 is a sixth embodiment of the present invention synoptic diagram;
Fig. 9 is the experiment synoptic diagram of the sensitivity of test capacitance touching control assembly of the present invention;
Figure 10 is the induction amount that the X-axis line of induction and the Y-axis line of induction produce in the experiment of Fig. 9.
Among the figure, the element numbers explanation
10, capacitance touching control assembly 12, inductive layer 14, protective seam 16, finger 18, the waveform 20 of voltage signal, the waveform 22 of voltage signal, the direct current position standard 24 of voltage signal, the direct current position standard 26 of voltage signal, high dielectric material film 28, high dielectric material film 30, capacitance touching control assembly 32, golden finger.
Embodiment
Below in conjunction with embodiment and accompanying drawing thereof the present invention is illustrated further.
Now see also Fig. 3, Fig. 3 is a first embodiment of the present invention synoptic diagram.As shown in the figure, described preparation inductive layer 12 and protective seam 14 form high dielectric material film 26 on inductive layer 12, then protective seam 14 is pasted on high dielectric material film 26 again.
Fig. 4 is the second embodiment of the present invention, prepares inductive layer 12 and protective seam 14, forms high dielectric material film 26 on protective seam 14, with protective seam 14 upsets, high dielectric material film 26 is pasted on inductive layer 12 again.
Fig. 5 is the third embodiment of the present invention, prepares inductive layer 12 and protective seam 14, forms high dielectric material film 28 on protective seam 14, protective seam 14 is pasted on inductive layer 12 again.
Fig. 6 is the fourth embodiment of the present invention, prepares inductive layer 12 and protective seam 14, after pasting protective seam 14 on the inductive layer 12, forms high dielectric material film 28 again on protective seam 14.
Fig. 7 is the fifth embodiment of the present invention, prepares inductive layer 12 and protective seam 14, forms two high dielectric material films 26 and 28 on two surfaces up and down of protective seam 14, high dielectric material film 26 is pasted on inductive layer 12 again.
Fig. 8 is the sixth embodiment of the present invention, prepares inductive layer 12 and protective seam 14, forms one first high dielectric material film 26 reaching one second high dielectric material film 28 on the inductive layer 12 on protective seam 14, protective seam 14 is pasted on the first high dielectric material film 26 again.
When object touches capacitance touching control assembly of the present invention, because described object has a high dielectric material film 26 or two high dielectric material films 26 and 28 to exist with 12 of inductive layers, therefore the described capacitance variation amount that causes of touching will increase, and sensitivity is also followed lifting.
The material that can form high dielectric material film 26 and 28 is a lot, for example titania (TiO
2).Titania has some characteristic, makes it be applicable to various application.For example, titania has absorption more by force at ultraviolet region, therefore can be used on the antiultraviolet product; The energy gap that titania has (bandgap) makes it can do photocatalyst; How the titania tool hydrophobicity of rice structure, it is on glass to can be applicable to self-cleaning or anti-fog; Titania has high index of refraction, and the collocation optical design can be used for catoptron; The dielectric coefficient of titania can significantly increase C up to 50～70
PressSize; In semiconductor applications, titania is replaced silicon dioxide by extensive studies, expects more effective reduction electric leakage; Titania tool high rigidity, so scratch resistance; Titania itself helps back processing procedure processing; The physics of titania and chemical property are stable; Titania does not have toxicity.The high dielectric material film 26 that titania is made and 28 can be crystallization, polycrystalline and three kinds of states of amorphous, and thickness is
To μ m grade, the method for making comprises with methods such as physical property deposition, chemical deposition, coating, chemical replacement, immersion, sprinklings it is plated on inductive layer 12 or the protective seam 14.In order to obtain the titanium dioxide film of good spreadability and stable in properties, the process that forms high dielectric material film 26 and 28 can be implemented under vacuum or non-vacuum environment, and the demand of looking is done thermal treatment, or add different solvents and compound, through obtaining titanium dioxide film after physical property or the chemical reaction.
Fig. 9 is the experiment synoptic diagram of the sensitivity of test capacitance touching control assembly of the present invention; wherein the inductive layer 12 of capacitance touching control assembly 30 has the X-axis line of induction and the Y-axis line of induction; titania is plated in and forms high dielectric material film 26 on the inductive layer 12; be protective seam 14 on it, golden finger 32 is used for touching capacitance touching control assembly 30.Figure 10 is the induction amount (ADC) that the X-axis line of induction and the Y-axis line of induction produce in the experiment of Fig. 9.Following table 1 is listed the thickness that does not plate high dielectric material film and high dielectric material film
The time, the X-axis line of induction that records and the induction amount of the Y-axis line of induction.With reference to Figure 10 and table 1, when golden finger 32 not during touch mode capacitive touch control component 30, the induction amount of the X-axis line of induction and the Y-axis line of induction is all 10; When golden finger 32 touch mode capacitive touch control components 30, the X-axis line of induction X10 of contact at the thickness that does not plate high dielectric material film and high dielectric material film is
Situation under the induction amount be respectively 108,112,93,117,163, and the induction amount of the Y-axis line of induction Y7 of contact is 127,136,105,125,167.Find out obviously that from the curve of Figure 10 the high dielectric material film significantly improves the induction amount of capacitance touching control assembly, that is improve its sensitivity.
Table 1
High dielectric material film 26 and 28 can not influence the protection of 14 pairs of inductive layers 12 of protective seam, and its thickness is negligible with respect to the thickness of protective seam 14, does not therefore influence the specification limits of equipment yet.
Above embodiment is only for the usefulness that the present invention is described, but not limitation of the present invention, person skilled in the relevant technique under the situation that does not break away from the spirit and scope of the present invention, can also be made various conversion or variation.Therefore, all technical schemes that are equal to also should belong to category of the present invention, should be limited by each claim.
Claims (60)
1. high sensitivity capacitance touching control assembly is characterized in that comprising:
One inductive layer;
One high dielectric material film is arranged on the described inductive layer; And
One protective seam is arranged on the described high dielectric material film.
2. high sensitivity capacitance touching control assembly as claimed in claim 1 is characterized in that described high dielectric material film has light transmission.
3. high sensitivity capacitance touching control assembly as claimed in claim 1 is characterized in that described high dielectric material film comprises titania.
4. high sensitivity capacitance touching control assembly as claimed in claim 1 is characterized in that described high dielectric material film has non-light transmittance.
5. high sensitivity capacitance touching control assembly as claimed in claim 1 is characterized in that described protective seam has light transmission.
6. high sensitivity capacitance touching control assembly as claimed in claim 1 is characterized in that described protective seam has non-light transmittance.
7. high sensitivity capacitance touching control assembly as claimed in claim 1 is characterized in that described inductive layer has light transmission.
8. high sensitivity capacitance touching control assembly as claimed in claim 1 is characterized in that described inductive layer has non-light transmittance.
9. high sensitivity capacitance touching control assembly is characterized in that comprising:
One inductive layer;
One protective seam is arranged on the described inductive layer; And
One high dielectric material film is arranged on the described protective seam.
10. high sensitivity capacitance touching control assembly as claimed in claim 9 is characterized in that described high dielectric material film has light transmission.
11. high sensitivity capacitance touching control assembly as claimed in claim 9 is characterized in that described high dielectric material film comprises titania.
12. high sensitivity capacitance touching control assembly as claimed in claim 9 is characterized in that described high dielectric material film has non-light transmittance.
13. high sensitivity capacitance touching control assembly as claimed in claim 9 is characterized in that described protective seam has light transmission.
14. high sensitivity capacitance touching control assembly as claimed in claim 9 is characterized in that described protective seam has non-light transmittance.
15. high sensitivity capacitance touching control assembly as claimed in claim 9 is characterized in that described inductive layer has light transmission.
16. high sensitivity capacitance touching control assembly as claimed in claim 9 is characterized in that described inductive layer has non-light transmittance.
17. a high sensitivity capacitance touching control assembly comprises:
One inductive layer;
One first high dielectric material film is arranged on the described inductive layer;
One protective seam is arranged on the described first high dielectric material film; And
One second high dielectric material film is arranged on the described protective seam.
18. high sensitivity capacitance touching control assembly as claimed in claim 17 is characterized in that described high dielectric material film has light transmission.
19. high sensitivity capacitance touching control assembly as claimed in claim 17 is characterized in that described high dielectric material film comprises titania.
20. high sensitivity capacitance touching control assembly as claimed in claim 17 is characterized in that described high dielectric material film has non-light transmittance.
21. high sensitivity capacitance touching control assembly as claimed in claim 17 is characterized in that described protective seam has light transmission.
22. high sensitivity capacitance touching control assembly as claimed in claim 17 is characterized in that described protective seam has non-light transmittance.
23. high sensitivity capacitance touching control assembly as claimed in claim 17 is characterized in that described inductive layer has light transmission.
24. high sensitivity capacitance touching control assembly as claimed in claim 17 is characterized in that described inductive layer has non-light transmittance.
25. the processing procedure of a high sensitivity capacitance touching control assembly is characterized in that comprising following steps:
(a) prepare an inductive layer and a protective seam;
(b) form a high dielectric material film on described inductive layer; And
(c) described protective seam is pasted on described high dielectric material film.
26. processing procedure as claimed in claim 25 is characterized in that, described (b) step comprises use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described high dielectric material film on described inductive layer.
27. processing procedure as claimed in claim 25 is characterized in that, described (b) step comprises uses titania to form described high dielectric material film.
28. processing procedure as claimed in claim 25 is characterized in that, described (b) step is included in and forms described high dielectric material film under the vacuum environment.
29. processing procedure as claimed in claim 25 is characterized in that, described (b) step is contained in and forms described high dielectric material film under non-vacuum environment.
30. processing procedure as claimed in claim 25 is characterized in that, more comprises described high dielectric material film is implemented thermal treatment.
31. the processing procedure of a high sensitivity capacitance touching control assembly comprises following steps:
(a) prepare an inductive layer and a protective seam;
(b) form a high dielectric material film on described protective seam; And
(c) described high dielectric material film is pasted on described high dielectric material film.
32. processing procedure as claimed in claim 31 is characterized in that, described (b) step comprises use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described high dielectric material film on described inductive layer.
33. processing procedure as claimed in claim 31 is characterized in that, described (b) step comprises uses titania to form described high dielectric material film.
34. processing procedure as claimed in claim 31 is characterized in that, described (b) step is included in and forms described high dielectric material film under the vacuum environment.
35. processing procedure as claimed in claim 31 is characterized in that, described (b) step is contained in and forms described high dielectric material film under non-vacuum environment.
36. processing procedure as claimed in claim 31 is characterized in that, more comprises described high dielectric material film is implemented thermal treatment.
37. the processing procedure of a high sensitivity capacitance touching control assembly is characterized in that comprising:
(a) prepare an inductive layer and a protective seam;
(b) form a high dielectric material film on described protective seam; And
(c) described protective seam is pasted on described inductive layer.
38. processing procedure as claimed in claim 37 is characterized in that, described (b) step comprises use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described high dielectric material film on described inductive layer.
39. processing procedure as claimed in claim 37 is characterized in that, described (b) step comprises uses titania to form described high dielectric material film.
40. processing procedure as claimed in claim 37 is characterized in that, described (b) step is included in and forms described high dielectric material film under the vacuum environment.
41. processing procedure as claimed in claim 37 is characterized in that, described (b) step is contained in and forms described high dielectric material film under non-vacuum environment.
42. processing procedure as claimed in claim 37 is characterized in that, more comprises described high dielectric material film is implemented thermal treatment.
43. the processing procedure of a high sensitivity capacitance touching control assembly is characterized in that comprising:
(a) prepare an inductive layer and a protective seam;
(b) described protective seam is pasted on described inductive layer; And
(c) form a high dielectric material film on described protective seam.
44. processing procedure as claimed in claim 43 is characterized in that, described (c) step comprises use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described high dielectric material film on described inductive layer.
45. processing procedure as claimed in claim 43 is characterized in that, described (c) step comprises uses titania to form described high dielectric material film.
46. processing procedure as claimed in claim 43 is characterized in that, described (c) step is included in and forms described high dielectric material film under the vacuum environment.
47. processing procedure as claimed in claim 43 is characterized in that, described (c) step is contained in and forms described high dielectric material film under non-vacuum environment.
48. processing procedure as claimed in claim 43 is characterized in that, more comprises described high dielectric material film is implemented thermal treatment.
49. the processing procedure of a high sensitivity capacitance touching control assembly is characterized in that comprising:
(a) prepare an inductive layer and a protective seam;
(b) form two high dielectric material films on upper and lower two surfaces of described protective seam; And
(c) one of them pastes on described inductive layer with described two high dielectric material films.
50. processing procedure as claimed in claim 49 is characterized in that, described (b) step comprises use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described two high dielectric material films on described inductive layer.
51. processing procedure as claimed in claim 49 is characterized in that, described (b) step comprises uses titania to form described two high dielectric material films.
52. processing procedure as claimed in claim 49 is characterized in that, described (b) step is included in and forms described two high dielectric material films under the vacuum environment.
53. processing procedure as claimed in claim 49 is characterized in that, described (b) step is contained in and forms described two high dielectric material films under non-vacuum environment.
54. processing procedure as claimed in claim 49 is characterized in that, more comprises described two high dielectric material films are implemented thermal treatment.
55. the processing procedure of a high sensitivity capacitance touching control assembly comprises:
(a) prepare an inductive layer and a protective seam;
(b) form one first high dielectric material film and reaching one second high dielectric material film on the described inductive layer on described protective seam; And
(c) described protective seam is pasted on the described first high dielectric material film.
56. processing procedure as claimed in claim 55 is characterized in that, described (b) step comprises use physical property deposition, chemical deposition, coating, chemical replacement, immersion or sprinkling and plate described first and second high dielectric material film on described inductive layer.
57. processing procedure as claimed in claim 55 is characterized in that, described (b) step comprises uses titania to form described first and second high dielectric material film.
58. processing procedure as claimed in claim 55 is characterized in that, described (b) step is included in and forms described first and second high dielectric material film under the vacuum environment.
59. processing procedure as claimed in claim 55 is characterized in that, described (b) step is contained in and forms described first and second high dielectric material film under non-vacuum environment.
60. processing procedure as claimed in claim 55 is characterized in that, more comprises described first and second high dielectric material film is implemented thermal treatment.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103870072A (en) * | 2012-12-17 | 2014-06-18 | 比亚迪股份有限公司 | Capacitive touch screen and production method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1458692A (en) * | 2002-05-17 | 2003-11-26 | 台湾积体电路制造股份有限公司 | Metal capacitor having high dielectric constant and low current leakage |
| CN101075030A (en) * | 2006-05-16 | 2007-11-21 | 三星电子株式会社 | Panel assembly |
| CN101258560A (en) * | 2005-09-06 | 2008-09-03 | 东丽株式会社 | Paste composition, dielectric composition, capacitor, and manufacturing method of paste composition |
| CN101458416A (en) * | 2007-12-12 | 2009-06-17 | 胜华科技股份有限公司 | Touching control panel and method for producing the same |
| CN101477421A (en) * | 2009-01-21 | 2009-07-08 | 友达光电股份有限公司 | Touch control panel structure |
-
2009
- 2009-08-03 CN CN2009101605994A patent/CN101989157A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1458692A (en) * | 2002-05-17 | 2003-11-26 | 台湾积体电路制造股份有限公司 | Metal capacitor having high dielectric constant and low current leakage |
| CN101258560A (en) * | 2005-09-06 | 2008-09-03 | 东丽株式会社 | Paste composition, dielectric composition, capacitor, and manufacturing method of paste composition |
| CN101075030A (en) * | 2006-05-16 | 2007-11-21 | 三星电子株式会社 | Panel assembly |
| CN101458416A (en) * | 2007-12-12 | 2009-06-17 | 胜华科技股份有限公司 | Touching control panel and method for producing the same |
| CN101477421A (en) * | 2009-01-21 | 2009-07-08 | 友达光电股份有限公司 | Touch control panel structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103870072A (en) * | 2012-12-17 | 2014-06-18 | 比亚迪股份有限公司 | Capacitive touch screen and production method thereof |
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