201102899 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種電容式觸控元件’特別是關於一種提高 感度的電容式觸控元件。 【先前技術】 電容式觸控技術之運作原理，係藉物件(例如手指或其他導 體)接觸電容式觸控元件造成觸點處的感應層(t〇Uch sens〇r)的電 谷值變化’經由控制器定位出§亥觸點的位置。由於觸控元件的 感應層係由導體製成，因此通常在感應層上覆蓋絕緣材質當作 保護層(cover)保護該感應層。保護層的材質通常選用塑膠、破 璃、樹脂、等強韌物。 圖1係手指接觸電容式觸控元件之示意圖，電容式觸控元 件10是由感應層12及其上方覆蓋的保護層14組成。感應層 12疋導體’因此其與地端GND之間存有基本電容cBase。保護 層14是絕緣體，當手指16碰觸保護層14時，由於人體屬於導 體且具有等同於接地的電位，因此感應層12與手指％之間將 出現另一電容CPress。在此情況下，感應層12可視為電容Cpfess 的上電極板’手指16可視為電容cPress的下電極板且接地，中 間的保護層14為電容匸押挪的介電層。所以在手指16碰觸保護 層14時’電容Cftess係與感應層12的基本電容CBase並聯，造 成整體的電容值增加。 3 201102899 圖2係控制器對圖1的觸控元件的充放電產生的電壓波形 圖。假設以定電流！在-定的時間_τ_控元件⑴進行充 ••放電’當手指未接觸觸控元件1〇時，產生的賴訊號是波 形18，當手指16接觸觸控元件1〇時，總電容值增加，產生的 電壓訊號魏祕20。電_號_贿驗驗取得其直流 位準，假設波形18的直流位準22為v，波形2〇的直流位準 24為V-Δν。由於定電流I與充放電_ τ固定，所以不管手 Ο 指16有無接觸觸控元件10 ’其總電荷Q是相同的，因此 Q = IxT = CBasexV = (CBase + cpress )χ (V _ Δγ) △ν cp , 。 公式 1 V lBase 十^Press 基本電谷CBase的電容量是pJ7等級，電容的電容量是 〇 #級。△曹愈大愈容易_出電壓變化量Δν，即所謂的感度 提升。由公式1可知，基本電容CBase變小或是電容CM變大 可以提升祕。基本電容cBase可㈣料離yQut)的技巧降 低。電容cPress是由感應層12、手指16與保護層14所構成，平 行板電容器之電容值為 公式2 C = EY£0A/d » 4 201102899 其中，εγε。為介電層的介電常數，A為兩龍板的面積，d為兩 電極板之間的距離。由公式2可知，欲增加的大小，可以 減小感應層12與手指16之間的距離、增加絲層12的面積、 或選擇高介電常數的保護層14。 提升電容式觸控元件感度的習知方法有：藉由電路佈線技 巧降低感麟12的基本餘‘、翻介電常紐大的保護層 14 (例如玻璃的介電常數約為5〜7)、使用厚度較薄的保護層14 專。但感應層14的重新設計較為麻煩，且因電容等級差異，改 善效果較不顯著。保護層14的厚度有時因為保護需求及使用設 備的規格已定而無法更改。 【發明内容】 本發明的目的之一，在於提出一種簡單、低成本的解決方 案來提高電容式觸控元件的感度。 本發明的目的之一，在於提出一種高感度電容式觸控元件 及其製程。 根據本發明，一種高感度電容式觸控元件包含一感應層、 一高介電材料膜在該感應層上、以及一保護層在該高介電材料 膜上。 根據本發明，一種高感度電容式觸控元件包含一感應層、 一保護層在該感應層上、以及一高介電材料膜在該保護層上。 根據本發明，一種高感度電容式觸控元件包含一感應層、 5 201102899 -第-高介電材料齡域觸上、—_層拽第_高介電 材料膜上、以及一第一南介電材料膜在該保護声上。^ ' 根縣發明’―種高献電容式_元件㈣程包含準備 * —絲層及—賴層、軸—高介電材_於該感應層上、以 及將該保護層貼覆在該高介電材料臈上。 根據本發明，-種高感度電容式觸控元件的製程包含準備 -感應層及-保護層、軸-高介電材料膜在該保護層上、以 〇 及將該高介電材料膜貼覆在該感應層上。 根據本發明，-鋪錢電容摘控元件的縣包含準備 -感應層及-保護層、形成一高介電材料膜在該保護層上、以 及將該保護層貼覆在該感應層上。 根據本發明’-種高感度電容式觸控元件的製程包含準備 一感應層及一保護層、將該保護層貼覆在該感應層上、以及形 成一高介電材料膜在該保護層上。 〇 根據本發明’―種高祕電容式觸控元件的製程包含準備 -感應層及-賴層、碱兩高介電材料膜在該保護層的上下 兩表面上、以及將該兩高介電材料膜其中之一貼覆在該感應層 上。 根據本發明’―種高減電容摘控元件的製程包含準備 -感應層及-保護層、形成―第—高介電材料膜在該感應層上 及-第二高介電材料膜在該保護層上、以及將該保制貼覆在 該第一高介電材料膜上。 6 201102899 开v成該同〃電材料膜的步驟可以使職雌沉積、化學性 沉^、塗佈、化學置換、浸_倾等方法，在真空或非真空 環&下把仃’並視需求做熱處理，或添加不同之溶劑與化合物。 【實施方式】 圖3係本發明的第—實施例，準備感應層 12及保護層14， 在感應層I2上域騎電椒顿％，鮮再將職層Μ貼覆 在高介電材料膜26上。 圖4係本發明的第二實施例，準備感應層^及保護層14， 在保覆層I4上形成高介電材料膜％，再將保護層Μ翻轉，將 高介電材制26財械顧12上。 圖5係本發明的第三實施例，準備感應層12及保護層14， 形成高介騎觸28在㈣層14上，獅㈣層μ貼覆在感 應層12上。 圖6係本發明的第四實施例，準備感應層12及保護層14， 在感應層12上貼覆保㈣14後，再形成高介電材料膜μ在保 護層14上。 圖7係本發明的第五實施例，準備感應層12及保護層14， 形成兩高介電材料膜26及28在保護層Η的上下兩表面再 將高介電材料臈26貼覆在感應層 12上。 圖8係本發明的第六實施例，準備感應層12及保護層14, 形成一第—高介電材料膜26在感應層12上及—第二高介電材 7 201102899 料膜28在保護層M上，再將保護層M貼覆在第一高介電材料 膜26上。 • 自物件刺本發_電容式雕元件時，*於該物件與感 μ曰門有向介電材料膜26或兩高介電材料膜26及28存 在因此》亥碰觸引起的電容值變化量將增加，感度也跟著提升。 感應層12、保護層14及高介電材料膜％及28可為具透 光性或具非透光性。 ❹ 可_成高介電材贿26及28的材料很乡，例如二氧化 鈦（i〇2)—氧化鈦具有某些特性’使其適用於各種不同的應 用。例如’二氧化鈦在料光區有較強魏’因此可用於防紫 外線產⑽上’ 一氧化鈦具有的能隙(band卿)使其可做光觸媒； 奈米結構的二氧化鈦具疏水性，可應用在自潔或防霧氣玻璃 上，一氧化鈦具有高折射率，搭配光學設計可用於反射鏡；二 氧化鈦的介電魏高達5〇〜7〇，可狀爾加的大小；在 ◎ 半賴躺t ’二氧化鈦已經被歧的研究來取代二氧化石夕， 期望更有_降細電；二氧倾具冑硬度，目此耐刮；二氧 化鈦本身有利於後製程加工；二氧化鈦的物理及化學性質穩 定；二氧化鈦沒有毒性。二氧化鈦製成的高介電材料膜％及 28可以是結晶、多晶及非晶三種狀態，厚度為A至哗等級， 製作的方法包含以物理性沉積、化學性沉積、塗佈、化學置換、 浸泡、喷灑等方法將其鍍在感應層12或保護層14上。為了得 到良好的覆蓋性和性質穩定的二氧化鈦膜，形成高介電材料臈 8 201102899 26及28的過程可在真空或非真空環境下施行，並視需求做熱 處理’或添加不同之溶劑與化合物，經過物理性或化學性反應 後得到二氡化鈦膜。 ϋ 9係測試本發明的f容式崎元件贼度的實驗，其中 . 餘式雕元件3()_麟絲及γ軸感應 線’-氧化鈦鍍在感應層12上形成高介電材料膜％，其上是 保護層14 ’金手指32絲碰觸電容式觸控元件3〇。圖削系圖 Ο 9的實驗巾Χ減絲及丫減應線產生喊歸(ADC)。以 下表1列出未鑛南介電材料膜及高介電材料膜的厚度為16〇入、 320 A、640 A、960 Α時，測得的Χ軸感應線及γ軸感應線的 感應1。參照圖10及表卜當金手指32未接觸電容式觸控元 件30時’ X軸感應線及γ軸感應線的感應量皆為⑺；當金手 扣32接觸電容式觸控元件3〇時，觸點的又軸感應線χι〇在未 鍍向介電材料膜及高介電材料膜的厚度為16〇α、32〇 a、640 Ο A、960 A的情況下的感應量分別是108、112、93、117、163， 而觸點的Y軸感應線Y7的感應量是127、136、105、125、167。 從圖10的曲線明顯看出高介電材料膜大幅提高電容式觸控元 件的感應量，亦即提高其感度。 201102899 表1 ADC 未鍍膜 160 A 320 A 640 A 960 A xo 10 10 10 10 10 XI 10 10 10 10 10 X2 10 10 10 10 10 X3 10 10 10 10 10 X4 10 10 10 10 10 X5 10 10 10 10 10 X6 10 10 10 10 10 X7 10 10 10 10 10 X8 10 10 10 10 45 X9 80 68 76 103 112 X10 108 112 93 117 163 Xll 93 112 85 86 131 X12 10 17 10 10 10 X13 10 10 10 10 10 X14 10 10 10 10 10 X15 10 10 10 10 10 X16 10 10 10 10 10 X17 10 10 10 10 10 X18 10 10 10 10 10 ADC 未鍍膜 160 A 320 A 640 A 960 A YO 10 10 10 10 10 Y1 10 10 10 10 10 Y2 10 10 10 10 10 Y3 10 10 10 10 10 Y4 10 10 10 10 10 Y5 11 27 61 21 88 Y6 112 138 117 126 171 Y7 127 136 125 144 182 Y8 112 132 105 125 167 Y9 29 16 10 29 27 Y10 10 10 10 10 10 Yll 10 10 10 10 10 Y12 10 10 10 10 10 10 201102899 高介電材料膜26及28不會影響保護層14對感應層i2的 保護’而且其厚麵對於健層14的厚度是可以忽略的，因此 也不影響設備的規格限制。 【圖式簡單說明】 圖1係手指接觸電容式觸控元件之示意圖； 圖2係控制器對圖1的觸控元件充放電產生的電壓波形圖； 圖3係本發明之第一實施例； 圖4係本發明之第二實施例； 圖5係本發明之第三實施例； 圖6係本發明之第四實施例； 圖7係本發明之第五實施例； 圖8係本發明之第六實施例； 圖9係測試本發明的電容式觸控元件的感度的實驗； 圖10係圖9的實驗中X軸感應線及Y軸感應線產生的感 應量。 【主要元件符號說明】 10 電容式觸控元件 12 感應層 14 保護層 16 手指 18 電壓訊號的波形 201102899 20 電壓訊號的波形 22 電壓訊號的直流位準 24 電壓訊號的直流位準 26 尚介電材料膜 28 高介電材料膜 30 電容式觸控元件 32 金手指201102899 VI. Description of the Invention: [Technical Field] The present invention relates to a capacitive touch element', particularly to a capacitive touch element for improving sensitivity. [Prior Art] The operation principle of the capacitive touch technology is to change the electric valley value of the sensing layer (t〇Uch sens〇r) at the contact by contacting the capacitive touch element (such as a finger or other conductor). The position of the §Hui contact is located via the controller. Since the sensing layer of the touch element is made of a conductor, the insulating layer is usually covered with an insulating material as a protective layer to protect the sensing layer. The material of the protective layer is usually made of plastic, glass, resin, and other tough objects. 1 is a schematic diagram of a finger touching a capacitive touch element. The capacitive touch element 10 is composed of a sensing layer 12 and a protective layer 14 covered thereon. The sensing layer 12 turns the conductor ' so that there is a basic capacitance cBase between it and the ground GND. The protective layer 14 is an insulator. When the finger 16 touches the protective layer 14, since the human body belongs to the conductor and has a potential equal to the ground, another capacitance CPress will appear between the sensing layer 12 and the finger. In this case, the sensing layer 12 can be regarded as the upper electrode plate of the capacitor Cpfess. The finger 16 can be regarded as the lower electrode plate of the capacitor cPress and grounded, and the intermediate protective layer 14 is a dielectric layer of the capacitor. Therefore, when the finger 16 touches the protective layer 14, the capacitance Cftess is connected in parallel with the basic capacitance CBase of the sensing layer 12, resulting in an increase in the overall capacitance value. 3 201102899 Figure 2 is a voltage waveform diagram generated by the controller for charging and discharging the touch element of Figure 1. Assume a constant current! During the fixed time _τ_ control element (1) charge / discharge "when the finger does not touch the touch element 1 ,, the generated signal is waveform 18, when the finger 16 touches the touch element 1 ,, the total capacitance value Increased, the generated voltage signal Wei Mi 20. The ____ bribe test obtains its DC level, assuming that the DC level 22 of the waveform 18 is v, and the DC level 24 of the waveform 2〇 is V-Δν. Since the constant current I and the charge and discharge _ τ are fixed, regardless of whether or not the finger 16 contacts the touch element 10', its total charge Q is the same, so Q = IxT = CBasexV = (CBase + cpress ) χ (V _ Δγ) △ν cp , . Formula 1 V lBase Ten ^Press Basic electric valley CBase's capacitance is pJ7 grade, and the capacitance of the capacitor is 〇#. △ Cao Yu is getting easier _ out voltage change Δν, the so-called sensitivity improvement. It can be known from Equation 1 that the basic capacitance CBase becomes smaller or the capacitance CM becomes larger, which can enhance the secret. The basic capacitance cBase can be reduced by the skill of (four) from yQut). The capacitor cPress is composed of the sensing layer 12, the finger 16 and the protective layer 14. The capacitance of the parallel plate capacitor is Equation 2 C = EY£0A/d » 4 201102899 where εγε. For the dielectric constant of the dielectric layer, A is the area of the two plates, and d is the distance between the two electrode plates. It can be seen from Equation 2 that the size to be increased can reduce the distance between the sensing layer 12 and the finger 16, increase the area of the wire layer 12, or select the protective layer 14 having a high dielectric constant. A conventional method for improving the sensitivity of a capacitive touch element is to reduce the basic balance of the sensory circuit by the circuit wiring technique, and to protect the protective layer 14 of the dielectric constant (for example, the dielectric constant of the glass is about 5 to 7). Use a thinner protective layer 14 specifically. However, the redesign of the sensing layer 14 is cumbersome, and the improvement effect is less significant due to the difference in capacitance levels. The thickness of the protective layer 14 may sometimes not be changed due to the protection requirements and the specifications of the equipment used. SUMMARY OF THE INVENTION One object of the present invention is to provide a simple, low-cost solution to improve the sensitivity of a capacitive touch element. One of the objects of the present invention is to provide a high-sensitivity capacitive touch element and a process thereof. In accordance with the present invention, a high sensitivity capacitive touch element includes a sensing layer, a high dielectric material film on the sensing layer, and a protective layer over the high dielectric material film. According to the present invention, a high-sensitivity capacitive touch element includes a sensing layer, a protective layer on the sensing layer, and a high dielectric material film on the protective layer. According to the present invention, a high-sensitivity capacitive touch element includes a sensing layer, 5 201102899 - a high-dielectric material age-onset, a - _ layer 拽 high dielectric material film, and a first south The electrical material film is on the protective sound. ^ 'Gunxian invention' - a kind of high-capacity capacitor type _ component (four) process includes preparation * - silk layer and - layer, shaft - high dielectric material - on the sensing layer, and the protective layer is attached to the high The dielectric material is on the raft. According to the present invention, a process for a high-sensitivity capacitive touch device includes a preparation-sensing layer and a protective layer, a shaft-high dielectric material film on the protective layer, and coating the high dielectric material film On the sensing layer. According to the present invention, the county of the money-capacitance pick-up element comprises a preparation-sensing layer and a protective layer, forming a film of a high dielectric material on the protective layer, and attaching the protective layer to the sensing layer. According to the present invention, a process for preparing a high-sensitivity capacitive touch device includes preparing a sensing layer and a protective layer, attaching the protective layer to the sensing layer, and forming a high dielectric material film on the protective layer . 〇 According to the present invention, a process for preparing a high-capacity capacitive touch device includes a preparation-sensing layer and a film of a two-layer high-dielectric material on the upper and lower surfaces of the protective layer, and the two high dielectric materials One of the material films is attached to the sensing layer. According to the invention, the process of the high-reduction capacitor-extracting component comprises preparing a sensing layer and a protective layer, forming a film of a first-high dielectric material on the sensing layer, and a second high-dielectric material film in the protection And protecting the layer on the first high dielectric material film. 6 201102899 The process of opening the film into the same material can be used to make the female deposition, chemical deposition, coating, chemical replacement, dip-dip, etc., under vacuum or non-vacuum ring & Heat treatment is required, or different solvents and compounds are added. [Embodiment] FIG. 3 is a first embodiment of the present invention, in which the sensing layer 12 and the protective layer 14 are prepared, and the sensing layer I2 is mounted on the surface of the sensing layer I2, and the layer is placed on the high dielectric material film. 26 on. 4 is a second embodiment of the present invention, in which the sensing layer and the protective layer 14 are prepared, and a high dielectric material film % is formed on the protective layer I4, and then the protective layer is turned over, and the high dielectric material is manufactured. Gu 12 on. Figure 5 is a third embodiment of the present invention in which the sensing layer 12 and the protective layer 14 are prepared to form a high dielectric rider 28 on the (four) layer 14, and a lion (four) layer μ is applied over the inductive layer 12. Fig. 6 shows a fourth embodiment of the present invention. The sensing layer 12 and the protective layer 14 are prepared. After the protective layer 12 is pasted with the protective layer (14) 14, a high dielectric material film [mu] is formed on the protective layer 14. 7 is a fifth embodiment of the present invention, in which the sensing layer 12 and the protective layer 14 are prepared, and two high dielectric material films 26 and 28 are formed on the upper and lower surfaces of the protective layer 再, and the high dielectric material 臈26 is attached to the sensing layer. On layer 12. 8 is a sixth embodiment of the present invention, preparing a sensing layer 12 and a protective layer 14, forming a first high dielectric material film 26 on the sensing layer 12 and a second high dielectric material 7 201102899. The film 28 is protected. On the layer M, the protective layer M is pasted on the first high dielectric material film 26. • When the object is punctured, the capacitance is changed by the capacitance of the object and the thyristor directional dielectric material film 26 or the two high dielectric material films 26 and 28 The amount will increase and the sensitivity will increase. The sensing layer 12, the protective layer 14, and the high dielectric material films % and 28 may be light transmissive or non-translucent. ❹ _ _ _ high dielectric materials bribes 26 and 28 materials are very common, such as titanium dioxide (i 〇 2) - titanium oxide has certain characteristics 'making it suitable for a variety of different applications. For example, 'titanium dioxide has strong Wei in the light-receiving zone', so it can be used for UV protection (10). The titanium dioxide has a bandgap to make it a photocatalyst. The nanostructured titanium dioxide is hydrophobic and can be used in On self-cleaning or anti-fog glass, titanium oxide has a high refractive index, and can be used for mirrors with optical design; the dielectric of titanium dioxide is up to 5〇~7〇, which can be used in the size of the shape; Titanium dioxide has been replaced by the study of sulphur dioxide, and it is expected to have more _lower electricity; dioxin has a hardness of 胄, which is resistant to scratching; titanium dioxide itself is beneficial for post-processing; titanium dioxide is stable in physical and chemical properties; No toxicity. The high dielectric material films % and 28 made of titanium dioxide may be in the crystalline, polycrystalline and amorphous states, and have a thickness of A to 哗. The methods of fabrication include physical deposition, chemical deposition, coating, chemical replacement, It is plated on the sensing layer 12 or the protective layer 14 by dipping, spraying, or the like. In order to obtain a good coverage and stable titanium dioxide film, the process of forming a high dielectric material 臈8 201102899 26 and 28 can be carried out in a vacuum or non-vacuum environment, and heat treatment is required as needed or different solvents and compounds are added. After a physical or chemical reaction, a titanium dioxide film is obtained. ϋ 9 series test of the thief element of the present invention, wherein the residual engraving element 3 () _ _ silk and γ axis induction line '- titanium oxide plated on the sensing layer 12 to form a high dielectric material film %, above which is the protective layer 14 'gold finger 32 wire touch capacitive touch element 3 〇. Fig. 9 The experimental towel Χ Χ Χ Χ 丫 丫 丫 丫 丫 。 。 。 。 。 。 产生 产生 产生 产生 产生 产生 产生Table 1 below shows the inductance of the Χ-axis induction line and the γ-axis induction line measured when the thickness of the non-mineral dielectric film and the high dielectric film is 16 inches, 320 A, 640 A, and 960 1. . Referring to FIG. 10 and the table, when the gold finger 32 is not in contact with the capacitive touch element 30, the sensing amounts of the X-axis sensing line and the γ-axis sensing line are both (7); when the gold button 32 contacts the capacitive touch element 3〇 The inductive amount of the contact axis of the contact axis χι〇 in the case of the thickness of the unplated dielectric film and the high dielectric film is 16 〇 α, 32 〇 a, 640 Ο A, 960 A, respectively. , 112, 93, 117, 163, and the sensing amount of the Y-axis sensing line Y7 of the contact is 127, 136, 105, 125, 167. It is apparent from the graph of Fig. 10 that the high dielectric material film greatly increases the amount of inductance of the capacitive touch element, that is, increases its sensitivity. 201102899 Table 1 ADC uncoated 160 A 320 A 640 A 960 A xo 10 10 10 10 10 XI 10 10 10 10 10 X2 10 10 10 10 10 X3 10 10 10 10 10 X4 10 10 10 10 10 X5 10 10 10 10 10 X6 10 10 10 10 10 X7 10 10 10 10 10 X8 10 10 10 10 45 X9 80 68 76 103 112 X10 108 112 93 117 163 Xll 93 112 85 86 131 X12 10 17 10 10 10 X13 10 10 10 10 10 X14 10 10 10 10 10 X15 10 10 10 10 10 X16 10 10 10 10 10 X17 10 10 10 10 10 X18 10 10 10 10 10 ADC Uncoated 160 A 320 A 640 A 960 A YO 10 10 10 10 10 Y1 10 10 10 10 10 Y2 10 10 10 10 10 Y3 10 10 10 10 10 Y4 10 10 10 10 10 Y5 11 27 61 21 88 Y6 112 138 117 126 171 Y7 127 136 125 144 182 Y8 112 132 105 125 167 Y9 29 16 10 29 27 Y10 10 10 10 10 10 Yll 10 10 10 10 10 Y12 10 10 10 10 10 10 201102899 The high dielectric material films 26 and 28 do not affect the protection of the protective layer 14 against the sensing layer i2' and the thickness of the thick layer for the layer 14 It is negligible and therefore does not affect the device's specification limits. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of a finger touching a capacitive touch element; FIG. 2 is a voltage waveform diagram generated by a controller for charging and discharging the touch element of FIG. 1; FIG. 3 is a first embodiment of the present invention; Figure 4 is a second embodiment of the present invention; Figure 5 is a fourth embodiment of the present invention; Figure 7 is a fifth embodiment of the present invention; Figure 7 is a fifth embodiment of the present invention; Sixth Embodiment; FIG. 9 is an experiment for testing the sensitivity of the capacitive touch element of the present invention; FIG. 10 is an amount of inductance generated by the X-axis sensing line and the Y-axis sensing line in the experiment of FIG. [Main component symbol description] 10 Capacitive touch element 12 Sensing layer 14 Protective layer 16 Finger 18 Voltage signal waveform 201102899 20 Voltage signal waveform 22 Voltage signal DC level 24 Voltage signal DC level 26 Still dielectric material Membrane 28 High Dielectric Material Film 30 Capacitive Touch Element 32 Gold Finger
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