TWI474929B - Joined type sputtering target assembly and manufacturing method thereof - Google Patents

Description

Joint tubular sputtering target and manufacturing method thereof

The present invention relates to a joined tubular target and a method for fabricating the same, and more particularly to a bonded tubular sputtering target having a bonding stability between a bonded tubular target and a back tube, and a method of fabricating the same.

Sputtering is a technique of depositing a target material of a planar target or a tubular target onto a predetermined substrate to form a thin film. Typical target materials include gold, silver, titanium, tungsten, molybdenum, aluminum, copper, copper. Aluminum alloy, aluminum-bismuth alloy, titanium-tungsten alloy, indium-copper alloy, indium-zinc alloy, tin-zinc alloy, cerium oxide or titanium nitride, etc., according to the application industry needs and cost considerations, the above target materials can be made into planar targets Material or tubular target for sputtering.

Referring to FIG. 1 , the conventional planar target 8 includes a planar back plate 81 , a bonding layer 82 and a target material 83 . According to the target material 83 to be selected, the bonding layer 82 with good wettability is selected. The target material 83 is stably bonded to the planar back plate 81. Since the conventional planar target 8 is in the magnetron sputtering process, its bombardment position is usually concentrated in a region where the tangential magnetic field is strong, and the target material 83 cannot be uniformly eroded, resulting in unstable quality of the sputtering film. Therefore, the conventional planar target is used. The use rate of material 8 can only reach about 35~50%.

In order to improve the problem of unstable sputtering quality and low usage rate of the conventional planar target material 8, a tubular target material is developed, and the tubular target material is sputtered to cause uniform erosion of the surface of the tubular target material. By improving the sputtering quality, the target material can be uniformly bombarded, thereby increasing the utilization rate of the target by 70-85%.

Please refer to Figures 2 and 3, which are tubular targets disclosed in the Patent No. I317763 of the Republic of China, "The Very Long Cylindrical Sputtering Target and Its Manufacturing Method", the conventional tubular target 9 comprising a support tube 91, a a bonding layer 92 and a sputtering target 93. The support tube 91 is a stainless steel tube or a titanium tube to provide better mechanical strength to support the sputtering target 93. The bonding layer 92 is made of indium as an adhesion material. The bonding stability between the sputtering target 93 and the support tube 91 prevents the conventional tubular target 9 from being detached from each other during use.

However, the support tube 91 or the sputter target 93 has poor wettability with the bonding layer 92, respectively. The prior patent only treats the bonding layer 92 with ultrasonic energy to increase the wettability of the bonding layer 92. . However, if the bonding layer 92 is treated only with ultrasonic energy, the bonding stability between the bonding layer 92 and the sputtering target 93 or the supporting tube 21 cannot be effectively improved, and the temperature rise and temperature required for sputtering are not required. During the operation, the problem that the support tube 91 and the sputtering target 93 are separated from each other still occurs.

SUMMARY OF THE INVENTION A primary object of the present invention is to provide a bonded tubular sputter target having excellent adhesion stability between the sputter target and the back tube.

A second object of the present invention is to provide a method of fabricating a bonded tubular sputtering target which is capable of improving the bonding stability of a sputtering target and a back tube.

In order to achieve the foregoing object, the technical content of the present invention includes:

A joint tubular sputtering target comprises: a back tube; a sputter target having an inner cavity for receiving the back tube; and an auxiliary adhesive layer comprising at least one brazing a copper layer and a soldered indium layer, the auxiliary adhesive layer is bonded between the back tube and the sputter target; wherein the back tube is a back tube made of stainless steel, titanium, titanium alloy, molybdenum or molybdenum alloy .

In the jointed tubular sputtering target of the present invention, the brazing copper layer is one, and the brazing copper layer is bonded to the outer surface of the back tube or the inner surface of the sputter target.

In the jointed tubular sputtering target of the present invention, the brazing copper layer is two, and the brazing copper layer is bonded to the outer surface of the backing tube and the inner surface of the sputter target.

In the bonded tubular sputtering target of the present invention, the brazing copper layer has a thickness of 0.1 to 1.0 μm.

In the jointed tubular sputtering target of the present invention, the auxiliary adhesive layer has a thickness of 0.3 to 0.5 mm.

A method for fabricating a bonded tubular sputtering target, comprising: a pre-processing step of providing a back tube and at least one sputter target, the outer surface of the back tube and/or the inner surface of the sputter target Sandblasting to make the outer surface of the back tube and/or the inner surface roughness of the sputter target 1.5 to 2.5 micrometers; a brazing step on the outer surface of the back tube and/or the sputtering target Forming a brazing copper layer on the inner surface of the embryo; forming a wetting layer on the back tube, the sputter target or the brazing copper layer to obtain a preliminary back tube and a preliminary target embryo respectively And an assembly step of arranging the at least one preliminary target embryo on the preparatory back tube, and forming a shape between the at least one preliminary target embryo and the preliminary back tube Forming at least one gap; and a soldering bonding step, filling molten indium into the gap between the preliminary back tube and the preliminary target embryo to form an auxiliary adhesive layer, and combining the preliminary back tube and the preliminary target embryo.

In the method of fabricating the junction-type tubular sputtering target of the present invention, the brazing copper layer may be selectively formed by thermal spray welding, electroplating or electroless plating.

In the method for fabricating the junction-type tubular sputtering target of the present invention, the wet layer is formed by coating, electroplating or electroless plating, and preferably the wet layer is treated by ultrasonic energy and a brush. The thickness is preferably from 0.2 to 0.8 μm.

In the manufacturing method of the jointed tubular sputtering target of the present invention, in the assembly step, the outer surface of the preliminary back tube is spaced apart by at least three partition lines, and the diameter of the partition line is preferably 0.3 to 0.5 mm.

In the method for producing a jointed tubular sputtering target of the present invention, in the assembly step, an annular gasket is placed between the preliminary target embryos.

In the method for fabricating the bonded tubular sputtering target of the present invention, in the pre-treatment step, after the brazing step and the wetting step, preferably, a polishing step is performed to bond the brazing copper layer or the wetting layer. The roughness is treated to less than 2.5 microns.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

Referring to FIG. 4, the jointed tubular sputtering target of the present invention comprises a back tube 1, at least one sputter target 2 and an auxiliary adhesive layer 3. The sputter target 2 is sleeved on the The outer peripheral wall of the back tube 1 and the back tube 1 and the sputter target 2 are joined by the auxiliary adhesive layer 3.

The back tube 1 has an inner cavity 11 and an outer surface 12 for receiving a heating device or an assembly frame for fabricating the bonded tubular sputtering target of the present invention. Auxiliary bonding layer 3. For example, the back pipe 1 may be selected from materials such as stainless steel, titanium, titanium alloy, molybdenum or molybdenum alloy, but not limited thereto; this embodiment is selected as stainless steel with high mechanical strength for support. The sputter target 2 is sputtered.

The sputter target 2 has an inner cavity 21 and an inner surface 22 for receiving the back tube 1, and the inner surface 22 is coupled to the auxiliary adhesive layer 3. For example, the sputter target 2 of the embodiment may be any sputter target such as gold, silver, titanium, tungsten, molybdenum, aluminum, copper, copper aluminum alloy, aluminum tantalum alloy, titanium tungsten alloy, indium copper. Sputtering materials such as alloys, indium-zinc alloys, tin-zinc alloys, cerium oxide or titanium nitride. The back tube 1 of the embodiment has an outer diameter h1, the sputter target 2 has an inner diameter h2, and the outer diameter h1 of the back tube 1 is smaller than the inner diameter h2 of the sputter target 2, and the back tube The difference between the outer diameter h1 of 1 and the inner diameter h2 of the sputter target 2 is 0.3-0.5 mm (mm), so that the back tube 1 is accommodated in the inner cavity 21 of the sputter target 2, the back tube 1 There is a gap between the sputter target 2 and the sputter target 2.

The auxiliary bonding layer 3 comprises at least one brazing copper layer 31 and a solder indium layer 32. The auxiliary bonding layer 3 is bonded between the backing tube 1 and the sputter target 2 . More specifically, the brazing copper layer 31 of the auxiliary bonding layer 3 may be selectively bonded to the outer surface 12 of the backing tube 1 and/or the inner surface 22 of the sputter target 2, and the solder indium layer 32 is The position is set according to the position at which the brazing copper layer 31 is bonded; as shown in FIG. 4, the brazing copper layer 31 is bonded to the outer surface 12 of the back tube 1, and the solder indium layer 32 is bonded to The brazing copper layer 31 is interposed between the sputter target 2; or, as shown in FIG. 5, the brazing copper layer 31 is bonded to the inner surface 22 of the sputter target 2, and the soldered indium is The layer 32 is bonded between the brazing copper layer 31 and the back tube 1; further, as shown in FIG. 6, the brazing copper layer 31 is bonded to the outer surface 12 of the back tube 1 or the sputtering target, respectively. The inner surface 22 of the embryo 2 is bonded between the back tube 1 and the two brazing copper layers 31 on the sputter target 2 . Increasing the wettability between the solder indium layer 32 and the back tube 1 or the sputter target 2 by the brazing copper layer 31, thereby increasing the combination of the back tube 1 and the sputter target 2 The effect of stability.

Referring to FIG. 7, the jointed tubular sputtering target of the present invention is produced by the following steps: a pre-processing step S1, a brazing step S2, a wetting step S3, an assembly step S4, and a soldering process. Combined with step S5.

The pre-processing step S1 provides a back tube 1 and at least one sputter target 2, and the outer surface 12 of the back tube 1 and/or the inner surface 22 of the sputter target 2 are sandblasted to make the back The outer surface 12 of the tube 1 and/or the inner surface 22 of the sputter target 2 has a roughness of 1.5 to 2.5 micrometers (μm). More specifically, the outer surface 12 of the back tube 1 and/or the inner surface 22 of the sputter target 2 have a roughness (Ra) of 1.5 to 2.5 μm, and if the roughness is less than 1.5 μm, the back tube 1 Or the surface of the sputter target 2 has insufficient physical adhesion, and the brazing copper layer 31 or the solder indium layer 32 cannot be provided with a sufficient bonding surface area. If the roughness is greater than 2.5 μm, the back tube 1 or the splash The surface unevenness of the target metal 2 is too large, which is disadvantageous to the combination of the brazing copper layer 31 or the solder indium layer 32. In this embodiment, the alumina powder having a particle size of 60 μm is taken, and the back tube 1 is treated by sand blasting. The outer surface 12 has a roughness of the outer surface 12 of the back tube 1 of 2.0 μm.

The back pipe 1 of the present embodiment is selected as a SUS304 or SUS316 stainless steel material having a structural strength sufficient to support the sputter target 2, but is not limited thereto. The sputtering target 2 of the present invention may be any target for sputtering, such as gold, silver, titanium, tungsten, molybdenum, aluminum, copper, tin, zinc, copper aluminum alloy, aluminum-bismuth alloy, titanium tungsten alloy, Indium copper alloy, indium zinc alloy, tin zinc alloy, ceria or titanium nitride.

The brazing step S2 is performed on the outer surface 12 of the back tube 1 and/or the inner surface 22 of the sputter target 2 to form a brazing copper layer 31. For example, the brazing copper layer 31 may be formed by thermal spraying, electroplating or electroless plating (hot dip). In this embodiment, a copper powder is sprayed on the back tube by thermal spray welding. The outer surface 12 is formed with the brazing copper layer 31. The copper powder preferably has a particle size of 400#, that is, it can be thermally spray-bonded to the outer surface of the back tube 1. .

The thickness of the brazing copper layer 31 of the present embodiment is preferably 0.1 to 1.0 μm. If the thickness of the brazing copper layer 31 is less than 0.1 μm, the density is insufficient and cannot be completely covered by the back tube 1 or the sputtering target. The surface of the second surface cannot effectively increase the bonding strength between the brazing copper layer 31 and the backing tube 1 or the sputtering target 2. If the thickness is greater than 1.0 μm, the bonding tubular sputtering target is increased. cost.

In the wetting step S3, a wet layer 321 is formed on the back tube 1, the sputter target 2 or the brazing copper layer 31, respectively, to obtain a preliminary back tube and a preliminary target embryo. More specifically, the wet layer 321 is made of the same material as the solder indium layer 32. The wet layer 321 is used to improve the wettability of the solder indium layer 32 and the brazing copper layer 31 (also referred to as metallization). ) to increase the bonding strength between the brazing copper layer 31 and the solder indium layer 32. The wet layer 321 of the embodiment may be selectively formed by coating, electroplating or electroless plating (hot dip). In this embodiment, the back tube 1 and the sputter target 2 are heated to 170 to 190 ° C, and The indium block can be melted and applied to the outer surface of the back tube 1 by directly contacting an indium block with the surface to be wetted, such as the brazing copper layer 31 and the inner surface of the sputter target 2. The inner surface 22 of the target 2 or the brazing copper layer 31 is sputtered. In addition, the wet layer 321 is preferably treated by ultrasonic energy and brush, and the wettability of the wet layer 321 with the back tube 1, the sputtering target 2 or the brazing copper layer 31 can be further increased. The bonding stability between the wet layer 321 and the outer surface 12 of the back tube 1 and the wet layer 321 and the inner surface 22 of the sputter target 2 are promoted. After the coating operation is completed and the wet layer 321 is cooled, the preliminary back tube and the preliminary target embryo are obtained, and the subsequent steps can be performed.

The thickness of the wet layer 321 is preferably 0.2-0.8 μm. If the thickness of the wet layer 321 is less than 0.2 μm, the bonding strength between the back tube 1 and the sputter target 2 cannot be effectively improved, and the sputtering cannot be withstood. The amount of deformation of the target for the difference in the expansion coefficient of indium, if the thickness is greater than 0.8 μm, increases the manufacturing cost of the bonded tubular sputtering target.

Referring to FIG. 8, after the brazing step S2 and the wetting step S3, a polishing step S31 is preferably performed to polish the roughness of the brazing copper layer 31 and/or the wetting layer 321 to less than 2.5 μm or less. More specifically, the polishing step S31 is performed by sandpaper with a number less than #325, but is not limited thereto, and the roughness of the brazing copper layer 31 and/or the wet layer 321 is treated by the polishing step S31. To less than 2.5 μm, a sufficient mechanical joint between the back tube 1 and the sputter target 2 can be provided without affecting the contact between the ultrasonic wave and the brush treatment, and the bonding strength is increased.

In the assembly step S4, the at least one preliminary target embryo is sleeved on the preparatory back tube, and at least one gap is formed between the at least one preliminary target embryo and the preliminary back tube. More specifically, at least three partitions having a diameter of 0.3 to 0.5 mm are spaced apart from the outer surface 11 of the preliminary back tube in the axial direction of the preliminary back tube, and the partition line may be selected as a tungsten wire or a copper wire. For fixing the preliminary target embryo on the preparatory back tube, and for providing a gap distance between the preliminary back tube and the preliminary target embryo; the spacer line 3 of the embodiment is a copper wire.

A ring gasket is placed between each of the prepared target embryos (which may be made of polytetrafluoroethylene, polyimine, polyketone, polyether oxime, polyethylene terephthalate, fluoroethylene propylene copolymer, flexible epoxy resin). Or a material such as rubber, the thickness of the annular gasket is preferably 0.5 mm, and the outer diameter of the annular gasket is slightly larger than the outer diameter of the preliminary target for the user to engage in the tubular sputtering target. After completion, the annular gasket is removed; in this embodiment, a polytetrafluoroethylene annular gasket having a thickness of 0.5 mm is selected. In the assembly step S4 of the embodiment, a plurality of preliminary target embryos and a plurality of annular spacers may be aligned, and a clamp is fixed into a long cylindrical shape, or the plurality of preliminary target embryos and the annular spacers may be respectively Do not fit into the preparatory back tube and align it to form a long cylindrical shape; in this embodiment, the plurality of preliminary target embryos and the annular spacer are selected by the clamping device to fix the plurality of preliminary target embryos. Preheated for use.

The soldering is combined with the step S5 to fill the molten indium into the gap between the preliminary backing tube and the preliminary target embryo to form an auxiliary adhesive layer 32 for the preparation of the preliminary back tube and the preliminary target embryo. In this embodiment, the preparatory back pipe is fixed on an assembly frame, and the preliminary back pipe is heated to 170 to 190 ° C to maintain the fluidity of the molten indium, so that the molten indium is smoothly filled to the preliminary back pipe. In the gap with the preliminary target, the auxiliary adhesive layer 32 is formed, and the molten indium is filled, and the auxiliary adhesive layer 32 is formed by standing and cooling at room temperature. Due to the good wettability between indium and copper, the present invention increases the back tube 1 and the sputter target 2 by the back tube 1 and/or the brazing copper layer 31 on the sputter target 2 The bonding strength of the auxiliary bonding layer 3 can improve the overall bonding stability of the bonded tubular sputtering target.

The following is a detailed operation of the preferred embodiment of the method for fabricating the bonded tubular sputtering target of the present invention:

1. First provide a SUS304 stainless steel back tube and an aluminum sputter target, the inner surface of the SUS304 stainless steel back tube and the outer surface of the aluminum sputter target, wipe with a volatile solvent (such as alcohol), and then with high pressure The air blows the surfaces to remove residual dust.

2. The outer surface of the SUS304 stainless steel back pipe is sandblasted with alumina powder having a particle size of 80 μm. The blasting pressure is set to 7 kgf/cm ² , and the roughness of the SUS304 stainless steel back pipe is 2.0 μm. The residual dust on the outer surface of the SUS304 stainless steel back pipe was removed with a volatile solvent and high pressure air.

3. The outer surface of the SUS304 stainless steel back tube is thermally sprayed by high-speed flame spraying with a copper powder having a particle size of 30 μm to form a brazing copper layer on the outer surface of the SUS304 stainless steel back tube, and the brazing copper layer The roughness is 2.5 μm, and the residual dust on the outer surface of the SUS304 stainless steel back pipe is removed by a volatile solvent and high-pressure air.

4. The aluminum sputter target is blasted with alumina powder with a particle size of 60 μm. The blasting pressure is set to 7 kgf/cm ² , and the roughness of the aluminum sputter target is 2.5 μm. Volatile solvent and high pressure air remove residual dust from the inner surface of the aluminum sputter target.

5. winding the aluminum sputter target with a heating coil, coating the aluminum sputter target with a heat insulation blanket, heating the aluminum sputter target to 180 ° C, and applying indium to the coating The aluminum sputters the inner surface of the target to form a wetting layer, and the wettability of the wet layer is increased by ultrasonic treatment, and the aluminum sputter target is maintained at a temperature of 180 ° C for subsequent operation.

6. Place a plurality of IR heater heater rods into the inner cavity of the SUS304 stainless steel back tube, and attach the plurality of heating rods to the inner surface of the SUS304 stainless steel back tube, and heat the SUS304 stainless steel back tube to At a temperature of 180 ° C, indium was applied to the outer surface of the SUS304 stainless steel back tube by coating to form another wetting layer, and the wettability of the wet layer was increased by ultrasonic treatment, and the SUS304 stainless steel back tube was allowed to stand. Cool at room temperature for subsequent operations.

7. Along the axial direction of the SUS304 stainless steel back pipe, four copper wires are attached to the outer surface of the SUS304 stainless steel back pipe, and the four copper wires are equally spaced, and the SUS304 stainless steel back pipe is fixed to an assembly. A ring gasket was placed in the SUS304 stainless steel back pipe as a bottom leakage preventing gasket, and the inner surface of the SUS304 stainless steel back pipe was heated to 180 ° C by the IR heater.

8. The aluminum sputter target embryo is sleeved outside the SUS304 stainless steel back tube, and a gap is formed between the aluminum sputter target and the SUS304 stainless steel back tube to wrap the aluminum sputter target embryo with a heating coil, and The aluminum sputter target is coated with a heat insulation blanket, the aluminum sputter target is heated to 180 ° C, and a molten indium is slowly filled into the gap, and the filling process is filled by vibration or tapping. The bubbles of molten indium in the gap are ejected, and after the filling operation is completed, the heating operation is stopped and the cooling is allowed to stand to obtain a joint aluminum tubular sputtering. Target.

Please refer to (a) to (e) of Annex 1 for the conditions shown in Table 1. After wiping with alcohol paper, observe the surface of the brazing copper layer or the stainless steel back tube and the wetting layer. Metallization effect.

As can be seen from Annex I, (a) and (c) are the metallized surfaces before wiping, and (b) and (d) are the results of wiping with alcohol paper. Comparing (b) and (d) can be found. The wetted layer formed on the brazing copper layer has a high bonding strength, does not fall off due to alcohol wiping, and can maintain the metallization effect of (b) compared with (a), (a) and ( b) there is no significant difference; on the other hand, if the wet layer of the indium is formed directly on the surface of the stainless steel plate, after the wiping, the wet layer of the indium is peeled off, and the outer surface of the stainless steel plate is exposed, and the better is not maintained. Bond strength.

In order to significantly compare the bonding effect between the surface of the stainless steel plate and the wet layer by the brazing copper layer, the first stainless steel plate is treated by different steps in the first step (e) of the accessory, as shown in the figure. The processing steps in the left region are the same as (a), and the processing steps in the right region are the same as (c). After wiping the surface of the stainless steel plates in the left and right regions, the left and right regions indicated by the arrows are clearly visible. The junction.

It can be seen that the junction-type tubular sputter target of the present invention can be further strengthened by the better bonding strength between the brazing copper layer and the back tube, the sputter target and the auxiliary adhesive layer. The effect of the stable combination of the sputter target and the stainless steel back tube avoids the occurrence of falling off during the sputtering operation.

The jointed tubular sputtering target of the present invention has a better bonding stability between the sputtering target and the back tube by a brazing copper layer, and has improved bonding strength between the sputtering target and the back tube. efficacy.

The method for fabricating the jointed tubular sputtering target of the present invention is capable of improving the binding stability of the sputtering target and the back tube by a brazing step.

While the invention has been described in connection with the preferred embodiments described above, it is not intended to limit the scope of the invention. The technical scope of the invention is protected, and therefore the scope of the invention is defined by the scope of the appended claims.

〔this invention〕

1‧‧‧ Back tube

11‧‧‧ lumen

12‧‧‧ outer surface

2‧‧‧Splatter target

21‧‧‧ lumen

22‧‧‧ inner surface

3‧‧‧Auxiliary bonding layer

31‧‧‧ brazing copper layer

32‧‧‧Soft soldered indium layer

321‧‧‧ Wet layer

H1‧‧‧ outer diameter of the back tube

H2‧‧‧Insert diameter of sputter target

S1‧‧‧Pre-processing steps

S2‧‧‧ Hard soldering step

S3‧‧‧ Wet step

S31‧‧‧ polishing step

S4‧‧‧ assembly steps

S5‧‧‧Soft soldering bonding step

[Use]

8‧‧‧Used flat targets

81‧‧‧Flat backplane

82‧‧‧ joint layer

83‧‧‧ Target materials

9‧‧‧Used tubular target

91‧‧‧Support tube

92‧‧‧ joint layer

93‧‧‧Sputter target

Figure 1: A side cross-sectional view of a conventional planar target 8.

Figure 2: Side view of a conventional tubular target 9.

Figure 3: A side cross-sectional view of a conventional tubular target 9.

Figure 4 is a side cross-sectional view (I) of the joined tubular sputtering target of the present invention.

Figure 5 is a side cross-sectional view (2) of the joined tubular sputtering target of the present invention.

Figure 6 is a side cross-sectional view (3) of the joined tubular sputtering target of the present invention.

Figure 7 is a block diagram (I) of the method for fabricating the bonded tubular sputtering target of the present invention.

Figure 8 is a block diagram (2) of the method for fabricating the bonded tubular sputtering target of the present invention.

Annex I: Photograph of the surface metallization effect of stainless steel plates with different processing conditions as shown in Table 1.

1. . . Back tube

11. . . Inner cavity

12. . . The outer surface

2. . . Sputter target

twenty one. . . Inner cavity

twenty two. . . The inner surface

3. . . Auxiliary adhesive layer

31. . . Brazed copper layer

32. . . Soft soldered indium layer

321. . . Wet layer

H1. . . Outer diameter of the back tube

H2. . . Splash target inner diameter

Claims (15)

A joint tubular sputtering target comprises: a back tube; a sputter target having an inner cavity for receiving the back tube; and an auxiliary adhesive layer comprising at least one brazing a copper layer and a soldered indium layer, the auxiliary adhesive layer is bonded between the back tube and the sputter target; wherein the back tube is a back tube made of stainless steel, titanium, titanium alloy, molybdenum or molybdenum alloy . The jointed tubular sputtering target according to claim 1, wherein the brazing copper layer is one, and the brazing copper layer is bonded to the outer surface of the back pipe or the inner surface of the sputter target . The jointed tubular sputtering target according to claim 1, wherein the brazing copper layer is two, and the brazing copper layer is bonded to the outer surface of the back tube and the sputter target surface. The joined tubular sputtering target according to claim 1, wherein the brazing copper layer has a thickness of 0.1 to 1.0 μm. The jointed tubular sputtering target according to claim 1, wherein the auxiliary adhesive layer has a thickness of 0.3 to 0.5 mm. A method for fabricating a bonded tubular sputtering target, comprising: a pre-processing step of providing a back tube and at least one sputter target, the outer surface of the back tube and/or the inner surface of the sputter target Sandblasting to make the outer surface of the back tube and/or the inner surface roughness of the sputter target 1.5 to 2.5 micrometers; a brazing step on the outer surface of the back tube and/or the sputtering target Embryo The inner surface forms a brazing copper layer; a wetting step, respectively forming a wetting layer on the back tube, the sputter target or the brazing copper layer to obtain a preliminary back tube and a preliminary target embryo; In the assembly step, the at least one preliminary target embryo is sleeved on the preliminary back tube, at least one gap is formed between the at least one preliminary target embryo and the preliminary back tube; and a solder bonding step is performed to fill the molten indium An auxiliary adhesive layer is formed in the gap between the preliminary back tube and the preliminary target embryo, and the preliminary back tube and the preliminary target embryo are combined. The method for fabricating a bonded tubular sputtering target according to claim 6, wherein after the brazing step and the wetting step, a polishing step is performed to roughen the brazing copper layer or the wet layer. Processed to less than 2.5 microns. The method of fabricating a bonded tubular sputtering target according to claim 6 or 7, wherein the brazing copper layer is formed by thermal spray welding, electroplating or electroless plating. The method of bonding a joined tubular sputtering target according to claim 6 or 7, wherein the wet layer is indium. The method of fabricating a joined tubular sputtering target according to claim 6 or 7, wherein the wetted layer is formed by coating, electroplating or electroless plating. The method of fabricating a bonded tubular sputtering target according to claim 6 or 7, wherein the wetted layer is additionally treated with ultrasonic energy and a brush. The method for producing a joined tubular sputtering target according to claim 6 or 7, wherein the wet layer has a thickness of 0.2 to 0.8 μm. The method of fabricating a joined tubular sputtering target according to claim 6 or 7, wherein in the assembly step, the outer surface of the preliminary back tube is spaced apart by at least three partition lines. The method for manufacturing a jointed tubular sputtering target according to claim 13 is characterized in that the partition line has a diameter of 0.3 to 0.5 mm. The method of fabricating a joined tubular sputtering target according to claim 6 or 7, wherein in the assembly step, an annular spacer is placed between the preliminary target embryos.