TWI474406B - Metal-oxide-semiconductor field-effect transistor having ceramic materials of metal oxide and the manufacturing method thereof are disclosed - Google Patents

Description

Semiconductor field effect transistor (MOSFET) with metal oxide ceramic material and preparation method thereof

The present invention relates to a semiconductor device, and more particularly to a semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material and a method of fabricating the same.

MOSFET (metal-oxide-semiconductor field-effect transistor) is the most basic component of various electronic components. Currently, the most commonly used materials for MOSFETs are bismuth (Si). In the semiconductor material, an electronic component having a PN junction unit can be fabricated through a semiconductor processing technique to fabricate a MOSFET. The components of MOSFETs have been widely used in the design and fabrication of various optoelectronic products.

The conventional MOSFET structure is formed by a PN junction surface having a source and a drain of a signal, and a metal layer-insulating oxide layer-semiconductor is present between the two regions. A layer (MOS) or the like allows the electronic signal to be transmitted from the source region to the drain region by controlling the voltage of the gate metal layer and the drain region. For example, the Republic of China invention patent I282623 (corresponding to US application 10/142, 674) patent case, invention patent I272679 (corresponding to US application 10/039, 068) patent case, and invention patent 417234 (corresponding to US application 60/ 032,041) Patent cases reveal the relevant structure and principle.

However, although twin is a good semiconductor material, it has its physical and chemical properties compared with ceramic materials, such as corrosion resistance, hard scratch resistance, high frequency systems, etc. On the top, the twins still have shortcomings. Therefore, with the development of technology, how to improve and improve the physical and chemical properties of MOSFETs, and reduce the cost of manufacturing, etc., is the focus of relevant researchers.

The object of the present invention is to provide a semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material which can improve physical and chemical properties and has a relatively simple processing and fabrication.

To achieve the above object, the present invention provides a semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material, comprising: a substrate; a first semiconductor layer having a metal oxide ceramic material formed on the substrate An insulating layer formed on the first semiconductor layer and partitioning the first semiconductor layer into at least two spaced regions; an ion implanted second semiconductor layer Located under two blocks of the first semiconductor layer; a first conductive layer formed on the second semiconductor layer, the first conductive layer having a source electrode and a drain electrode; and a second conductive layer It is formed on the insulating layer, and the second conductive layer has a gate electrode.

To achieve the above object, the present invention also provides a method of fabricating a semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material, comprising: providing a substrate; forming a first semiconductor layer having a metal oxide ceramic material thereon An insulating layer is formed on the first semiconductor layer, and the first semiconductor layer is partitioned into at least two spaced regions; and an ion implanted second semiconductor layer is formed on the substrate a second semiconductor layer is formed on the second semiconductor layer to have a source electrode and a drain electrode; and a second conductive layer is formed on the insulating layer to have A gate electrode.

The invention has the advantages that the metal oxide ceramic material is applied, and after the simple processing, the ceramic semiconductor component having the PN junction can be obtained, and the metal oxide is applied compared with the conventional semiconductor component made of germanium. Ceramic materials have characteristics such as high corrosion resistance, hard scratch resistance, high frequency system application, and thus physical and chemical properties, thereby expanding the design and application range of electronic components, and making the present invention It has the advantages of simple processing and production and low cost.

For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

Referring to the first to sixth figures, the present invention provides a "semiconductor field effect transistor having a metal oxide ceramic material and a method of manufacturing the same", wherein the method can include the following steps: (S100) A substrate 10, which may be any known conductor or non-conductor material, such as ITO (indium tin oxide) conductive glass as a conductor material, or glass as a non-conductor material.

(S200) forming a first semiconductor layer 20 of a metal oxide ceramic material on the substrate 10; wherein the first semiconductor layer 20 having the metal oxide ceramic material is prepared by using, for example, a gas condensation synthesis method It is prepared by a mechanical alloy method, a chemical reduction method or a lyotropic method. In the present invention, the sol gel method is taken as an example, and therefore, the first semiconductor layer 20 may contain a nanometer ( 10 ^-9 m) metal oxide ceramic particles, a polymer adhesive and a solvent.

The material of the metal oxide may be selected from the group consisting of titanium oxide (TiO ₂ ), zinc oxide (ZnO), tin dioxide (SnO ₂ ), ferric oxide (Fe ₂ O ₃ ), and nickel oxide (NiO). Preferably, it is selected from the group consisting of titanium dioxide. The solvent may be alcohol, and the polymer adhesive may be polyvinyl (vinvl butyral), PVB, poly(methyl methacrylate, PMMA) or polyvinyl alcohol. (Poly (vinyl alcohol), PVA) and the like, but not limited thereto, preferably polyvinyl butyral (PVB).

The ceramic particles and the polymer adhesive are uniformly mixed in the solvent at a predetermined weight percentage, such as 1 g of ceramic particles of TiO ₂ , 0.06 g of a polymer adhesive, 7.5 ml of a solvent (alcohol), and water. 2.5 ml may be uniformly mixed, but not limited to this example, and the first semiconductor layer 20 is formed, and after sintering, it is well adhered to the substrate 10, and a suitable sintering temperature may be about 475 ° C. Up and down.

In addition, the preparation of ceramic particles of nano-sized metal oxides can be carried out as follows:

1. Physical pulverization: mechanical pulverization, hydrogen embrittlement, ultrasonic or other methods (such as sparking, bursting).

2. Liquid phase method: spray method, hydrothermal method, oxidation, precipitation, synthesis, decomposition or crystallization.

3. Gas phase method: evaporation, condensation method (plasma, high frequency heating), gas phase reaction (oxygen or nitridation of halogen compounds, thermal decomposition, gas phase synthesis).

The above-mentioned methods are all possible, but are not limited to the above, and the above is a preparation technique well known to those skilled in the art of nano ceramics synthesis, and the above-described principles will not be further described in the present invention.

(S300) forming an insulating layer 30 protruding from the first semiconductor layer 20, and partitioning the first semiconductor layer 20 into at least two spaced apart blocks 21a, 21b; the insulating layer 30 can be any A known insulating material, such as cerium oxide (SiO ₂ ) as an insulating material, may be formed on the first semiconductor layer 20 by a coating method, so that the insulating layer 30 can be protruded from the first semiconductor. At the center of layer 20.

(S400) forming an ion-implanted second semiconductor layer 40 under the two blocks 21a, 21b of the first semiconductor layer 20 to form a PN-type junction; in a specific implementation of the present invention, The second semiconductor layer 40 is coated on the two blocks 21a, 21b of the first semiconductor layer 20 with a solution of metal ions or non-metal ions, and then implants metal ions or non-metal ions through the sintering process. In the first semiconductor layer 20, the second semiconductor layer 40 is formed under the two blocks 21a, 21b of the first semiconductor layer 20.

The solution may contain a metal ion or a non-metal ion, a polymer adhesive, and a solvent, and the metal ion or non-metal ion and the polymer adhesive are uniformly mixed in the solvent at a predetermined weight percentage. The polymer adhesive and the solvent may be the same as those described above, and will not be further described herein.

The metal ions may be iron (Fe) ions, chromium (Cr) ions, silver (Ag) ions or zinc (Zn) ions, etc., but are not limited thereto. The non-metal ions may be nitrogen (N) or phosphorus (P), etc., and the appropriate temperature for the sintering may be about 475 ° C or so.

Thereby, a solution having metal ions or non-metal ions is applied onto the first semiconductor layer 20, and after sintering, ions are implanted in the first semiconductor layer 20, and ions can be diffused to the first semiconductor layer 20. Above, that is, the second semiconductor layer 40 is formed in the first semiconductor layer 20, and further in comparison with the first semiconductor layer 20, the second semiconductor layer 40 is a semiconductor layer having ions; further, When iron (Fe ³⁺ ) is used as the ion, when the second semiconductor layer 40 is implanted into the first semiconductor layer 20, the original portion of the n-type first semiconductor layer 20 can be converted into the p-type The second semiconductor layer 40; if nitrogen is used as an ion, a part of the n-type can be converted into a p-type by using the valence of nitrogen.

(S500) forming a first conductive layer 50 on the second semiconductor layer 40 to have a source electrode 51 and a drain electrode 52; the first conductive layer 50 can be any known to have good conductivity Sex materials, such as gold (Au), silver (Ag) and other good conductive materials, but not limited to this.

(S600) A second conductive layer 60 is formed on the insulating layer 30 to have a gate electrode 61.

The second conductive layer 60 can also be any known good conductive material as described for the first conductive layer 50.

In addition, it should be noted that the above steps (S500) and (S600) can be further replaced, that is, the second conductive layer 60 can be formed first on the insulating layer 30, and then second. A first conductive layer 50 is formed on the semiconductor layer 40.

Accordingly, the semiconductor field effect transistor of the present invention having the metal oxide ceramic material can be formed by the above-described manufacturing method to include the substrate 10 and the first semiconductor layer 20 having the metal oxide ceramic material formed on the substrate 10. An insulating layer 30 formed on the first semiconductor layer 20, an ion-implanted second semiconductor layer 40 formed under the two blocks 21a, 21b of the first semiconductor layer 20, and formed on the second semiconductor layer 40 The first conductive layer 50, and the second conductive layer 60 formed on the insulating layer 30 are configured as described in the above description.

In summary, the present invention applies a metal oxide ceramic material, and after simple processing, a ceramic semiconductor component having a PN junction is obtained, which is compared with a conventional semiconductor component made of tantalum. Different from the physical and chemical properties different from the coffin crystal, it can expand its application range, and the processing is simple, which can reduce the production cost. It is the application of metal oxide ceramic materials, such as high corrosion resistance and hard resistance. The application of scratching and high-frequency systems can enhance the physical and chemical properties, thereby expanding the range of design and application of electronic components. In particular, when TiO ₂ is selected, TiO ₂ can be processed at a relatively low temperature and can be produced in a low-cost manner. Therefore, TiO ₂ is relatively simple in processing and production, and the production cost is low, of course, the present invention Other materials, such as zinc oxide, tin dioxide, ferric oxide and nickel oxide, have the same characteristics and effects as those of TiO ₂ , thereby making the invention simple in processing and production. And has the effect of reducing costs.

However, the drawings and descriptions disclosed above are only examples of the present invention, and those skilled in the art can make various other modifications according to the above description, and these changes still belong to the inventive spirit of the present invention. The scope of the patents defined below.

10‧‧‧Substrate

20‧‧‧First semiconductor layer

Block 21a, 21b‧‧‧

30‧‧‧Insulation

40‧‧‧Second semiconductor layer

50‧‧‧First conductive layer

51‧‧‧Source electrode

52‧‧‧汲electrode

60‧‧‧Second conductive layer

61‧‧‧gate electrode

The first figure is a flow chart of the steps of the present invention.

The second figure is a schematic view of the substrate in the present invention.

The third figure is a schematic view of the substrate and the first semiconductor layer in the present invention.

The fourth figure is a schematic view of the substrate, the first semiconductor layer and the insulating layer in the present invention.

The fifth figure is a schematic view of the substrate, the first semiconductor layer, the insulating layer and the second semiconductor layer in the present invention.

The sixth figure is a schematic view of the substrate, the first semiconductor layer, the insulating layer, the second semiconductor layer, and the first and second conductive layers in the present invention.

10. . . Substrate

20. . . First semiconductor layer

30. . . Insulation

40. . . Second semiconductor layer

50. . . First conductive layer

51. . . Source electrode

52. . . Bipolar electrode

60. . . Second conductive layer

61. . . Gate electrode

Claims (8)

A method of fabricating a semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material, comprising: providing a substrate; forming a first semiconductor layer of a metal oxide ceramic material on the substrate; forming an insulating layer to protrude On the first semiconductor layer, and partitioning the first semiconductor layer into at least two spaced regions; forming an ion implanted second semiconductor layer containing metal ions or non-metal ions, a solution of a polymer adhesive and a solvent is applied to the two blocks of the first semiconductor layer, and metal ions or non-metal ions are implanted in the first semiconductor layer through sintering to form Under the two blocks of the first semiconductor layer, wherein the metal ion or non-metal ion and the polymer adhesive are mixed in the solvent, the non-metal ion is nitrogen (N) or phosphorus (P); forming a first a conductive layer on the second semiconductor layer to have a source electrode and a drain electrode; and a second conductive layer on the insulating layer to have a gate electrode. A method of fabricating a semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material according to claim 1, wherein the first semiconductor layer is formed by a sol gel method. A method of fabricating a semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material according to claim 2, wherein the first semiconductor layer comprises ceramic particles having a nano-sized metal oxide, A polymer adhesive and a solvent, the ceramic particles and the polymer adhesive are mixed in the solvent. A method of fabricating a semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material as described in claim 3, wherein the metal oxide is selected from the group consisting of titanium oxide (TiO ₂ ), zinc oxide (ZnO), and dioxide. One of tin (SnO ₂ ), ferric oxide (Fe ₂ O ₃ ), and nickel oxide (NiO). A method of fabricating a semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material as described in claim 1, wherein the metal ion is iron (Fe) ion, chromium (Cr) ion, and silver (Ag). Ionic or zinc (Zn) ions. A semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material, comprising: a substrate; a first semiconductor layer of a metal oxide ceramic material formed on the substrate; an insulating layer, the protrusion Forming on the first semiconductor layer, and partitioning the first semiconductor layer into at least two spaced regions; an ion implanted second semiconductor layer located in two regions of the first semiconductor layer Under the block, wherein the ions of the second semiconductor layer are metal ions or non-metal ions, the non-metal ions are nitrogen (N) or phosphorus (P); a first conductive layer is formed on the second semiconductor layer The first conductive layer has a source electrode and a drain electrode; and a second conductive layer is formed on the insulating layer, the second conductive layer has a gate electrode. The semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material according to claim 6, wherein the metal oxide of the first semiconductor layer is selected from the group consisting of titanium oxide (TiO ₂ ) and zinc oxide (ZnO). One of tin dioxide (SnO ₂ ), ferric oxide (Fe ₂ O ₃ ), and nickel oxide (NiO). A semiconductor field effect transistor (MOSFET) having a metal oxide ceramic material as described in claim 6, wherein the metal ion is iron (Fe) ion, chromium (Cr) ion, silver (Ag) ion or Zinc (Zn) ions.