CN103400765B - A method for producing an oxide thin film transistor - Google Patents

A method for producing an oxide thin film transistor Download PDF

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CN103400765B
CN103400765B CN 201310282038 CN201310282038A CN103400765B CN 103400765 B CN103400765 B CN 103400765B CN 201310282038 CN201310282038 CN 201310282038 CN 201310282038 A CN201310282038 A CN 201310282038A CN 103400765 B CN103400765 B CN 103400765B
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annealing
thin film
film transistor
oxide thin
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CN103400765A (en )
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施俊斐
董承远
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昆山龙腾光电有限公司
上海交通大学
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Abstract

一种氧化物薄膜晶体管的制造方法,包括以下步骤:在有氧氛围内,将所述氧化物薄膜晶体管置于退火炉中进行第一次退火,其中,第一次退火时退火炉中的温度T1的范围为200℃‑400℃;以及在第一次退火完成后,将所述氧化物薄膜晶体管置于退火炉中进行第二次退火,其中,第二次退火时退火炉中的温度T2的范围为150℃‑250℃,并且所述第二次退火时退火炉中的温度T2低于所述第一次退火时退火炉中的温度T1。 A method for producing an oxide thin film transistor, comprising the steps of: in the oxygen atmosphere, the oxide thin film transistor is placed first anneal is performed in an annealing furnace, wherein the first annealing temperature in the annealing furnace T1 is in the range of 200 ℃ -400 ℃; and upon completion of the first annealing, the oxide thin film transistor is placed in an annealing furnace subjected to a second annealing, in which, when the second annealing temperature in the annealing furnace T2 in the range of 150 ℃ -250 ℃, and the second time T2 of the annealing temperature in the annealing furnace is less than said first temperature T1 in the annealing lehr. 本发明的氧化物薄膜晶体管的制造方法通过采用两段式退火工艺,既有利于氧原子扩散进入有源层,又有利于改善氧化物薄膜晶体管的所有膜层的特性。 A method for producing an oxide thin film transistor of the present invention, by employing two-stage annealing process, the oxygen atoms diffuse into conducive to the active layer, but also help to improve the characteristics of all the oxide film layers of the thin film transistor.

Description

氧化物薄膜晶体管的制造方法 A method for producing an oxide thin film transistor

技术领域 FIELD

[0001]本发明涉及半导体器件的制造领域,且特别涉及一种氧化物薄膜晶体管的制造方法。 [0001] The present invention relates to the field of manufacturing a semiconductor device, and more particularly relates to a method for producing an oxide thin film transistor.

背景技术 Background technique

[0002]氧化物薄膜晶体管是场效应晶体管的一种,其包括栅极、漏极、源极、有源层、保护层等膜层。 [0002] The oxide thin film transistor is a field effect transistor, which includes a film gate, a drain, a source, an active layer, a protective layer and the like. 氧化物薄膜晶体管因其具有省电、成本低、工艺灵活等优点,而被作为驱动元件广泛应用于显示装置中。 Oxide thin film transistor having its power-saving, low cost and flexible process, etc., it is widely used as a driving element of the display device.

[0003]在氧化物薄膜晶体管的制造过程中,为了改善氧化物薄膜晶体管的性能,通常需要对氧化物薄膜晶体管进行退火处理。 [0003] In the process for producing an oxide thin film transistor, in order to improve the performance of the oxide thin film transistor, the thin film transistor is often necessary to perform oxide annealing. 对氧化物薄膜晶体管进行退火处理的目的有两个: Objective of annealing the oxide thin film transistor are two:

(I)使退火环境中的氧原子扩散进入有源层,进而中和因保护层成膜时产生的大量氧空位(载流子的主要来源);(2)降低氧化物薄膜晶体管的所有膜层(含界面)的应力和缺陷态。 (I) the oxygen atoms diffuse into the annealing environment active layer (the major source of carriers) and in addition a large number of oxygen vacancies due to the protective film forming layer is generated; (2) lowering all the film oxide thin film transistor layer (including the interface) state of stress and defects. 在对氧化物薄膜晶体管进行退火处理时,较高的退火温度有利于氧原子扩散进入有源层,但不利于膜层界面特性的改善;反之,较低的退火温度虽然有利于降低膜层界面特性中的应力和缺陷态,但氧原子因为能量较低无法充分地透过保护层而扩散进入有源层。 When the oxide thin film transistor is annealed the annealing temperatures favor higher oxygen atoms diffuse into the active layer, but not conducive to improve the interface characteristics of the film; conversely, a lower annealing temperature may help to reduce the interface layer characteristic defect states and stress, but because of the lower energy oxygen through the protective layer can not be sufficiently diffused into the active layer. 然而,现有技术中的氧化物薄膜晶体管的退火工艺只采用单一温度对氧化物薄膜晶体管进行退火处理,从而导致现有的氧化物薄膜晶体管的制造方法不能兼顾上述两方面的效果。 However, the annealing process oxide thin film transistor of the prior art using only a single temperature of the oxide thin film transistor is annealed, causing a conventional method for producing an oxide thin film transistor does not take into account the effects of the above two aspects.

发明内容 SUMMARY

[0004]本发明的目的在于,提供一种氧化物薄膜晶体管的制造方法,其既可以有利于氧原子扩散进入有源层,又可以改善氧化物薄膜晶体管的膜层特性。 [0004] The object of the present invention to provide a method for producing an oxide thin film transistor, which can facilitate both oxygen atoms diffuse into the active layer, and can improve the characteristics of the oxide film of the thin film transistor.

[0005] —种氧化物薄膜晶体管的制造方法,包括以下步骤:在有氧氛围内,将所述氧化物薄膜晶体管置于退火炉中进行第一次退火,其中,第一次退火时退火炉中的温度Tl的范围为200°C-40(TC;以及在第一次退火完成后,将所述氧化物薄膜晶体管置于退火炉中进行第二次退火,其中,第二次退火时退火炉中的温度T2的范围为150°C-250°C,并且所述第二次退火时退火炉中的温度T2低于所述第一次退火时退火炉中的温度Tl。 [0005] - Method for producing an oxide thin film transistor of the species, comprising the steps of: in the oxygen atmosphere, the oxide thin film transistor is placed in the first anneal is performed in an annealing furnace, wherein the first annealing lehr Tl is a temperature range of 200 ° C-40 (TC; and upon completion of the first annealing, the oxide thin film transistor is placed in an annealing furnace subjected to a second annealing, in which, when the second annealing back furnace temperature T2 in the range of 150 ° C-250 ° C, and when the second annealing temperature lower than the temperature T2 of the annealing furnace annealing furnace Tl when the first anneal.

[0006]在本发明的一个具体实施方案中,所述有氧氛围中的氧气含量按体积比例计算为21%-100%0 [0006] In one particular embodiment of the invention, the oxygen content of the oxygen in the atmosphere is calculated as 100% 0 21% by Volume

[0007]在本发明的一个具体实施方案中,在退火炉中对所述氧化物薄膜晶体管进行所述第一次退火时,所述第一次退火的时间至少为40分钟。 When [0007] In one particular embodiment of the present invention, the first anneal is performed on the oxide thin film transistor in an annealing furnace, annealing the first time period of at least 40 minutes.

[0008]在本发明的一个具体实施方案中,所述第二次退火的时间为至少为60分钟。 [0008] In one particular embodiment of the invention, the second annealing time is at least 60 minutes.

[0009]在本发明的一个具体实施方案中,所述有氧氛围为空气或者纯氧气或者氧气与氮气的混合气体。 [0009] In one particular embodiment of the invention, the oxygen is air or pure oxygen atmosphere or a mixed gas of oxygen and nitrogen.

[0010]在本发明的一个具体实施方案中,所述第二次退火是在无氧氛围内进行。 [0010] The second anneal is performed in an oxygen-free atmosphere in a particular embodiment of the present invention.

[0011]在本发明的一个具体实施方案中,在对氧化物薄膜晶体管进行第一次退火之前还包括以下步骤:提供一基板;在所述基板上形成栅极;在所述基板上形成覆盖所述栅极的栅极绝缘层,其中所述栅极绝缘层具有第一区域、第二区域以及第三区域,其中所述第二区域位于所述栅极的正上方,所述第一区域与所述第三区域分别位于所述第二区域的两侧;在所述栅极绝缘层的第一区域及第三区域分别形成漏极及源极;在所述栅极绝缘层的第二区域上形成有源层;以及在所述漏极、所述有源层及所述源极上形成覆盖它们的保护层。 [0011] In one particular embodiment of the invention, the oxide thin film transistor prior to the first anneal further comprising the steps of: providing a substrate; forming a gate electrode on the substrate; forming overlying the substrate, a gate insulating layer of the gate, wherein the gate insulating layer having a first region, a second region and a third region, wherein the second area is located directly above the gate, the first region and the third region are respectively positioned on both sides of the second region; forming drain and source, respectively, in the first region and the third region of the gate insulating layer; a second gate insulating layer in the forming an active layer region; and forming a protective layer covering them on the drain electrode, the active layer and the source.

[0012]在本发明的一个具体实施方案中,在所述漏极、所述有源层及所述源极上形成保护层的步骤与对氧化物薄膜晶体管进行第一次退火的步骤之间还包括以下步骤:在所述保护层的位于所述漏极一侧的区域上方形成像素电极。 Between the steps [0012] In one particular embodiment of the present invention, the drain electrode, the active layer and the source layer is formed on the protective oxide thin film transistor and the step of performing a first anneal further comprising the steps of: forming a pixel electrode over the region of the protective layer is located on the drain side.

[0013]在本发明的一个具体实施方案中,所述保护层正对所述漏极的区域形成有接触孔,所述像素电极通过所述接触孔与所述漏极连接。 [0013] In one particular embodiment of the invention, the protective layer being formed with a contact hole for the drain region of the pixel electrode connected to the drain electrode through the contact hole.

[0014]在本发明的一个具体实施方案中,所述漏极及所述源极与所述有源层连接。 [0014] In one particular embodiment of the invention, the drain and the source is connected to the active layer.

[0015]本发明有益效果是,本发明的氧化物薄膜晶体管的制造方法通过采用两段式退火工艺,即在高温含氧的环境中对氧化物薄膜晶体管进行第一次退火,在低温环境中对氧化薄膜晶体管进行第二次退火,以对氧化物薄膜晶体管进行退火处理,从而使本发明的氧化物薄膜晶体管的制造方法既有利于氧原子扩散进入有源层,又有利于改善氧化物薄膜晶体管的所有膜层的特性。 [0015] Advantageous effects of the present invention, a method for producing an oxide thin film transistor of the present invention, i.e., performing a first anneal on the oxide thin film transistor in a high temperature atmosphere containing oxygen by two-stage annealing process in a low temperature environment oxide thin film transistor of a second annealing process for annealing the oxide thin film transistor, a method for producing such an oxide thin film transistor of the present invention is conducive to the oxygen atoms diffuse into the active layer, and it helps to improve the oxide film All film transistor characteristics.

[0016]上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。 [0016] The above description is only an overview of the technical solution of the present invention, in order to more fully understood from the present invention, but may be implemented in accordance with the contents of the specification, and in order to make the aforementioned and other objects, features and advantages of the present invention can be more apparent from the following Patent cited preferred embodiments accompanied with figures are described in detail below.

附图说明 BRIEF DESCRIPTION

[0017]图1是本发明一实施例的氧化物薄膜晶体管的结构示意图。 [0017] FIG. 1 is a schematic structural diagram of an oxide thin film transistor according to an embodiment of the present invention.

[0018]图2是本发明一实施例的氧化物薄膜晶体管的制造方法的流程图。 [0018] FIG 2 is a flowchart of a method for producing an oxide thin film transistor according to an embodiment of the present invention.

[0019]图3是氧化物薄膜晶体管A在单一的高温条件下退火后的转移特性曲线图。 [0019] FIG. 3 is a graph showing the transfer characteristic in the oxide thin film transistor A at a single high temperature annealing.

[0020]图4是氧化物薄膜晶体管B在单一的低温条件下退火后的转移特性曲线图。 [0020] FIG. 4 is a graph showing transfer characteristics of the oxide thin film transistor B is annealed at a single low temperature.

[0021]图5是氧化物薄膜晶体管C采用两段式退火工艺后的转移特性曲线图。 [0021] Figure 5 C is an oxide thin film transistor using the transfer characteristic graph showing the two-stage annealing process.

[0022]图6是由图3-图5中的氧化物薄膜晶体管的转移特性曲线得到的氧化物薄膜晶体管的特性参数表。 [0022] FIG. 6 is a characteristic parameter table transferred by the oxide thin film transistor characteristics of the oxide thin film transistor of Figures 3-5 curves obtained.

[0023] 具体本实施例 [0023] Specific embodiments of the present

[0024]为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例,对本发明的具体实施例、结构、特征及其功效,详细说明如后。 [0024] To further elaborate the technical means and effects the present invention is predetermined to achieve the object of the invention taken in conjunction with the following drawings and preferred embodiments, examples, structural, characteristics and specific efficacy of the present invention, as will be described in detail .

[0025]图1是本发明一实施例的氧化物薄膜晶体管的结构示意图。 [0025] FIG. 1 is a schematic structural diagram of an oxide thin film transistor according to an embodiment of the present invention. 请参考图1,本发明的氧化物薄膜晶体管被用作例如液晶显示器的驱动元件,其包括基板11、栅极12、栅极绝缘层 Referring to FIG. 1, oxide thin film transistor of the present invention is used as a liquid crystal display element such as a drive, which includes a substrate 11, a gate 12, a gate insulating layer

13、漏极14、源极15、有源层17、保护层18以及像素电极19。 13, a drain 14, a source 15, 17, the protective layer 18 and a pixel electrode of the active layer 19.

[0026]基板11为透明基板,其可由玻璃、石英或透明高分子材料等制成。 [0026] The substrate 11 is a transparent substrate, which may be made of glass, quartz or a transparent polymer materials.

[0027]栅极12设置在基板11上。 [0027] The gate electrode 12 is provided on the substrate 11. 在本实施例中,栅极12是通过采用磁控溅射法在基板11上形成第一导电膜,然后再通过光刻工艺来图案化该第一导电膜而形成的。 In the present embodiment, the gate 12 is the first conductive film by using a magnetron sputtering method is formed on the substrate 11, and then the first conductive film is formed by a photolithography process patterned. 第一导电膜即栅极12的材料只要导电性良好即可,可根据需要选择,例如可以为Ti(钛)、A1(铝)、Pt(铂)、Au(金)等金属单质或包含其中至少一种的合金或包含其中至少一种的金属氧化物。 I.e., the first conductive film 12 as long as the gate electrode material having good conductivity can be selected according to the need, for example, may be a Ti (titanium), A1 (aluminum), Pt (platinum), Au (gold) or a metal such as simple substance wherein an alloy comprising at least one or at least one metal oxide.

[0028]栅极绝缘层13是为了将栅极12绝缘设置,以覆盖栅极12的方式形成在基板11上。 [0028] The gate insulating layer 13 for insulating the gate 12 is provided to cover the gate electrode 12 is formed on the substrate 11. 在本实施例中,栅极绝缘层I 3是通过采用等离子体化学气相沉积法(PlasmaEnhancedChemicalVaporDeposi t1n,PECVD)在基板11上形成覆盖棚.极12的第一绝缘膜而形成的。 In the present embodiment, the gate insulating layer covering the shed I 3 is formed on the substrate 11 by using plasma chemical vapor deposition (PlasmaEnhancedChemicalVaporDeposi t1n, PECVD). The first electrode insulating film 12 is formed. 第一绝缘膜的材料即栅极绝缘层13的材料只要绝缘性出色即可,第一绝缘膜能够使用例如硅氧化膜(Si02)、硅氮化膜(SiN)、氧化铝膜(Al2O3)等。 I.e. material of the first insulating film, a gate insulating layer of insulating material 13 as long as the well can be, for example, the first insulating film can be a silicon oxide film (Si02), silicon nitride film (SiN), aluminum oxide film (Al2O3), etc. . 栅极绝缘层13包括第一区域131、第二区域132及第三区域133。 The gate insulating layer 13 comprises a first region 131, second region 132 and third region 133. 其中,第二区域132位于栅极12的正上方,第一区域131与第三区域133分别位于第二区域132的两侧。 Wherein the second region 132 is located directly above the gate electrode 12, a first region 131 and third region 133 respectively positioned on both sides of the second region 132.

[0029]漏极14设置在栅极绝缘层13的第一区域131的正上方。 [0029] The drain electrode 14 disposed directly above the first region of the gate insulating layer 13 is 131.

[0030]源极15设置在栅极绝缘层13的第三区域133的正上方。 [0030] The source electrode 15 disposed directly above the third region 13 of the gate insulating layer 133. 在本实施例中,漏极14和源极15是通过采用磁控溅射法在栅极绝缘层13上形成第二导电膜,然后再通过光刻工艺来图案化该第二导电膜而形成,并使得形成的漏极14和源极15分别位于栅极绝缘层13的第一区域131及第三区域133的上方。 In the present embodiment, the drain 14 and the source electrode 15 is then formed by a photolithography process to the second conductive film is patterned using the second conductive film by a magnetron sputtering method is formed on the gate insulating layer 13, , and so that the drain 14 and the source electrode 15 are formed over the first region of the gate insulating layer 131 and the third region 13 133. 第二导电膜即漏极14和源极15的材料只要导电性良好即可,可根据需要选择,例如为为Ti(钛)、A1(铝)、Pt(铂)、Au(金)等金属单质或包含其中至少一种的合金或包含其中至少一种的金属氧化物。 I.e. material of the second conductive film 14 and the drain source 15 as long as good electrical conductivity can be selected according to the need, for example, as Ti (titanium), A1 (aluminum), Pt (platinum), Au (gold) metal such as simple substance or an alloy comprising at least one of or comprises at least one metal oxide.

[0031]有源层17为设置在栅极绝缘层13的第二区域132上方的氧化物半导体层,其隔着栅极绝缘层13与栅极12相对设置,并且有源层17与漏极14及源极15连接。 [0031] The active layer 17 is provided on the oxide semiconductor layer 132 over the second region of the gate insulating layer 13, a gate insulating layer 13 interposed therebetween and the gate electrode 12 disposed opposite, and the drain electrode 17 and the active layer 14 and the source 15 is connected. 需要说明的是,在本实施例中,有源层17是通过采用磁控溅射法在栅极绝缘层13上形成氧化物半导体膜,然后再通过光刻工艺来图案化该氧化物半导体膜而形成。 Incidentally, in the present embodiment, the active layer 17 is an oxide semiconductor film is formed on the gate insulating layer 13 by magnetron sputtering, and then patterned by a photolithography process the oxide semiconductor film form. 氧化物半导体膜即有源层17的材料例如为含有In(铟)、Ga(镓)、Zn(锌)的非晶态的金属氧化物半导体。 I.e., the oxide semiconductor film material, for example, the active layer 17 containing In (indium), Ga (gallium), Zn (zinc) amorphous metal oxide semiconductor.

[0032]保护层18以覆盖漏极14、源极15及有源层17的方式形成于漏极14、源极15、有源层17以及栅极绝缘层13之上。 [0032] The protective layer 18 to cover the drain electrode 14, the active layer 17 and the embodiment 15 is formed on the source drain 14, source electrode 15, on the active layer 17 and the gate insulating layer 13. 在本实施例中,保护层18是通过采用磁控溅射法形成覆盖漏极 In the present embodiment, the protective layer 18 is formed to cover the drain by using a magnetron sputtering

14、源极15及有源层17的第二绝缘膜,然后再通过光刻工艺来图案化该第二绝缘膜,使该第二绝缘膜在正对漏极14的区域形成有接触孔181,从而形成保护层18。 14, the source electrode 15 and the active layer, a second insulating film 17, and then is patterned by a photolithography process to the second insulating film so that the second insulating film is formed in the contact hole 181 to the drain region 14 of n , thereby forming the protective layer 18. 在其他实施例中,在保护层18的制备过程中,还可以采用等离子体化学气相沉积法形成覆盖漏极14、源极15及有源层17的第二绝缘膜。 In other embodiments, during the preparation of the protective layer 18 may also be a second insulating film formed to cover the drain electrode 14, source electrode 15 and the active layer 17 by plasma chemical vapor deposition method. 第二绝缘膜即保护层18的材料只要绝缘性出色即可,第二绝缘膜能够使用例如硅氧化膜(S12)、硅氮化膜(SiN)、氧化铝膜(Al2O3)等。 I.e. material of the second insulating film is an insulating protective layer 18 as long as the excellent properties can be, for example, the second insulating film can be a silicon oxide film (S12), a silicon nitride film (SiN), aluminum oxide film (Al2O3) and the like.

[0033]像素电极19形成于保护层18的位于漏极14一侧的区域上方。 [0033] The pixel electrode 19 is formed on the protective layer over the drain region 14 side 18. 在本实施例中,像素电极19是通过采用磁控溅射法在保护层18的位于漏极14 一侧的区域上方形成第三导电膜,然后再通过光刻工艺图案化该第三导电膜而形成。 In the present embodiment, the pixel electrode 19 is formed over the third conductive film 14 side of the drain region of the protective layer 18 by magnetron sputtering, by a photolithography process and then patterning the third conductive film form. 像素电极19通过保护层18上的接触孔181与漏极14连接。 The pixel electrode 19 is connected with the drain electrode 14 through the contact hole 181 on the protective layer 18. 需要说明的是,像素电极19为透明电极,例如可以由氧化铟锡(ITO)制成。 Incidentally, the pixel electrode 19 a transparent electrode, for example, made of indium tin oxide (ITO).

[0034]请参照图2,本发明的氧化物薄膜晶体管的制造方法包括以下步骤: [0034] Referring to FIG 2, a method for producing an oxide thin film transistor of the present invention comprises the steps of:

[0035]步骤SI:提供一基板11。 [0035] Step SI: providing a substrate 11.

[0036]步骤S2:在基板11上形成栅极12。 [0036] Step S2: forming a gate 12 on the substrate 11. 具体的,首先采用磁控溅射法在基板11上形成第一导电膜,然后通过光刻工艺来图案化该第一导电膜,从而形成栅极12。 Specifically, first, the first conductive film using a magnetron sputtering method is formed on the substrate 11, and then patterning the first conductive film by a photolithography process, thereby forming the gate electrode 12.

[0037]步骤S3:在基板11上形成覆盖栅极12的栅极绝缘层13。 [0037] Step S3: forming a gate insulating layer 13 covering the gate electrode 12 on the substrate 11. 具体的,采用等离子体化学气相沉积法在基板11上形成覆盖栅极12的第一绝缘膜,而形成栅极绝缘层13。 Specifically, using the first insulating film covering the gate electrode 12 of the plasma chemical vapor deposition is formed on the substrate 11, a gate insulating layer 13 is formed. 需要说明的是,栅极绝缘层13具有第一区域131、第二区域132及第三区域133,并且第二区域132位于栅极12的正上方,第一区域131与第三区域133分别位于第二区域132的两侧。 Incidentally, the gate insulating layer 13 having a first region 131, second region 132 and third region 133, and a second region 132 located immediately above the gate electrode 12, the first region 131 and third region 133 are positioned sides of the second region 132.

[0038]步骤S4:在栅极绝缘层13上形成漏极14及源极15。 [0038] Step S4: the drain electrode 14 and the source 15 is formed on the gate insulating layer 13. 具体的,首先采用磁控溅射法在栅极绝缘层13上形成第二导电膜,然后通过光刻工艺来图案化该第二导电膜,而在栅极绝缘层13的第一区域131及第三区域上形成漏极14及源极15。 Specifically, first, the second conductive film using a magnetron sputtering method is formed on the gate insulating layer 13, and the second conductive film is patterned by a photolithography process, in the first region of the gate insulating layer 13 and 131 the drain electrode 15 is formed on the third region 14 and the source.

[0039]步骤S5:在栅极绝缘层13上形成有源层17。 [0039] Step S5: the active layer 17 is formed on the gate insulating layer 13. 具体的,首先采用磁控溅射法在栅极绝缘层13的第二区域132形成氧化物半导体膜,然后通过光刻工艺来图案化该氧化物半导体膜,从而形成有源层17。 Specifically, the first magnetron sputtering using an oxide semiconductor film is formed in a second region of the gate insulating layer 13 is 132, and then is patterned by a photolithography process to the oxide semiconductor film, so that the active layer 17 is formed. 需要说明的是,有源层17分别与漏极14及源极15连接。 Incidentally, the active layer 17, respectively, and the drain electrode 14 and the source 15 is connected.

[0040]步骤S6:在漏极14、有源层17及源极15上形成覆盖它们的保护层18。 [0040] Step S6: forming the protective layer 18 covering them on the drain 14, the active layer 17 and the source 15. 具体的,在本实施方式中,首先采用磁控溅射方法形成覆盖漏极14、有源层17及源极15的第二绝缘膜,然后通过光刻工艺来图案化该第二绝缘膜,使该第二绝缘膜正对漏极14的区域形成有接触孔181,从而形成覆盖漏极14、有源层17及源极15的保护层18。 Specifically, in the present embodiment, the first formed by magnetron sputtering. 14, active layer 17 and the source of the second insulating film covering the drain electrode 15, and then patterning the insulating film by a second photolithography process, the second insulating film a contact hole 181 being formed a drain region 14, thereby forming the protective layer 18 covers the drain electrode 14, active layer 17 and the source 15. 在其他实施方式中,还可以通过等离子体化学气相沉积法形成覆盖漏极14、有源层17及源极15的第二绝缘膜。 In other embodiments, also 14, active layer 17 and the source of the second insulating film covering the drain electrode 15 may be formed by a plasma chemical vapor deposition method.

[0041]步骤S7:在保护层18上形成像素电极19。 [0041] Step S7: the pixel electrode 19 is formed on the protective layer 18. 具体的,首先采用磁控溅射法在保护层18的位于漏极14 一侧的区域上方形成第三导电膜,然后通过光刻工艺来图案化该第三导电膜,形成像素电极19,从而得到氧化物薄膜晶体管。 Specifically, first, using the third conductive film is formed by magnetron sputtering over the region of the protective layer 14 side of the drain 18, and then is patterned by a photolithography process of the third conductive film, the pixel electrode 19 is formed, whereby obtained oxide thin film transistor. 需要说明的是,像素电极19通过保护层18上的接触孔181与漏极14连接。 Incidentally, the pixel electrode contact hole 19 on the protective layer 14 connected to the drain 18181 through.

[0042]步骤S8:在有氧氛围中,对氧化物薄膜晶体管进行第一次退火。 [0042] Step S8: the oxygen atmosphere, an oxide thin film transistor of the first anneal is performed. 在氧化物薄膜晶体管的制造过程中,形成保护层18时,由于等离子体放电会在有源层17上造成氧空位的浓度显著增加,即造成载流子的浓度显著增加,影响氧化物薄膜晶体管的操作特性,例如会降低氧化物薄膜晶体管的开关电流比和阈值电压等。 In the manufacturing process of an oxide thin film transistor, 18 is formed, since the plasma discharge of oxygen vacancy concentration will cause a significant increase, i.e., the carrier concentration resulting in a significant increase in the protective layer on the active layer 17, an oxide thin film transistor Effects operational characteristics, e.g. reduces the switching current and the threshold voltage than the oxide thin film transistor and the like. 因此,在有氧氛围中,对氧化物薄膜晶体管进行第一次退火,可以使氧氛围中的氧原子扩散进入有源层17,进而中和因保护层18成膜时产生的大量氧空位,从而改善氧化物薄膜晶体管的开关电流比和阈值电压。 Thus, in the oxygen atmosphere, an oxide thin film transistor of the first anneal is performed, the oxygen atom may be an oxygen atmosphere from diffusing into the active layer 17, and thus a large number of oxygen vacancies in the film deposition and the protective layer 18 due to the generated, thereby improving the oxide thin film transistor off current ratio and the threshold voltage. 具体的,首先将氧化物薄膜晶体管置于退火炉中,然后向退火炉中通入含有氧气的气体进而形成有氧氛围,并在Tl温度下对氧化物薄膜晶体管进行第一次退火,第一次退火的时间为tl。 Specifically, the first oxide thin film transistor is placed in an annealing furnace, and oxygen-containing gas into the annealing furnace thereby forming the oxygen atmosphere, and the first oxide thin film transistor annealing at temperature Tl, the first annealing time is tl. 需要说明的是,第一次退火时退火炉中的温度Tl需保证含氧氛围中的氧原子具有足够的活动能力穿透氧化物薄膜晶体管的保护层18进入氧化物薄膜晶体管内部,可以理解的是,第一次退火时退火炉中的温度Tl越高含氧氛围中的氧原子的活动能力越强,但过高的退火温度又不利于膜层膜质和界面特性的改善,特别是高温退火很容易在器件膜层内引起热应力,本发明的实施方式中,第一次退火时退火炉中的温度Tl在200°C-400°C之间;第一退火的含氧氛围中的氧气含量按照体积比计算例如为21%_100%,第一退火时通入的气体例如为空气、纯氧气或氧气与氮气的混合气体等,可以理解的是,含氧氛围中的氧气含量越高,第一次退火的效果越明显;第一次退火的时间tl与第一次退火时退火炉中的温度Tl及第一次退火的氧气含量有关系,即第一次退火时退火炉中的温度Tl Incidentally, the first annealing temperature in the annealing furnace Tl need to ensure an oxygen atom having an oxygen-containing atmosphere sufficient activity to penetrate the protective layer of an oxide thin film transistor 18 into the interior of the oxide thin film transistor can be appreciated is the first oxygen atom activity annealing temperature in the annealing furnace Tl higher oxygen-containing atmosphere is stronger, but the high temperature annealing does not help to improve the film quality and interface properties of the film, especially the high temperatures annealing is easy to cause thermal stress in the device layer, embodiments of the present invention, the first annealing temperature in the annealing furnace Tl between 200 ° C-400 ° C; an oxygen-containing atmosphere in the first annealing oxygen content is calculated, for example, in a volume ratio of 21% _100%, into the first annealing gas, for example air, pure oxygen or a mixed gas of oxygen and nitrogen and the like, will be appreciated that the higher the oxygen content of the oxygen-containing atmosphere , first the more obvious the effect of annealing; first anneal time tl associated with the oxygen content of the annealing furnace temperature Tl and the second time when the first anneal anneal, i.e. the first annealing lehr temperature Tl 高,第一次退火的氧气含量越高,第一次退火的时间tl就越少,但是为了保证在第一次退火时,含氧氛围中的氧原子能够充分进入氧化物薄膜晶体管内部,使氧化物薄膜晶体管达到第一次退火效果即使氧空位达到特定的中和百分比,在退火炉中对氧化物薄膜晶体管进行第一退火的时间tl至少为40分钟。 High, the higher the oxygen content of the first annealing, the first anneal is less time tl, but in order to ensure that when the first annealing, an oxygen atom in the oxygen-containing atmosphere can sufficiently into the interior of an oxide thin film transistor, so that oxide thin film transistor to achieve the effect even if the first anneal in oxygen vacancies and reaches a certain percentage of the oxide thin film transistor of the first annealing time tl is at least 40 minutes in an annealing furnace.

[0043]可以理解的是,第一次退火不限于在退火炉中进行,在其他实施方式中,第一次退火还可以采用快速退火(RTP)、激光退火等瞬态高温加热手段,这样可减少第一次退火的时间tlo [0043] It will be appreciated that the first annealing in the annealing furnace is not limited to, in other embodiments, the annealing the first rapid thermal annealing may also be employed (the RTP), laser annealing and other transient temperature heating means, which can reducing the first annealing time tlo

[0044]步骤S9:对氧化物薄膜晶体管进行第二次退火。 [0044] Step S9: oxide thin film transistor of the second anneal. 由于氧化物薄膜晶体管的有源层17内的点缺陷、位错和面缺陷等缺陷态以及氧化物薄膜晶体管的所有膜层的应力(含界面)的存在,会降低氧化物薄膜晶体管的操作性能,例如会降低氧化物薄膜晶体管的开关电流比、阈值电压、场效应迀移率以及亚阈值摆幅。 All the film layers due to the stress point defects in the active layer 17 of oxide thin film transistors, surface defects like dislocations and defect states and the oxide thin film transistor (including the interface) is present, may decrease the performance of the oxide thin film transistor , e.g., threshold voltage, field effect reduces the rate of shift Gan oxide thin film transistor off current ratio and subthreshold swing. 因此,对氧化物薄膜晶体管进行第二次退火,可以降低氧化物薄膜晶体管所有膜层(含界面)的应力和有源层17的缺陷态,从而可以改善氧化物薄膜晶体管的开关电流比、阈值电压、场效应迀移率以及亚阈值摆幅。 Thus, the oxide thin film transistor of a second annealing, the oxide thin film transistor can be reduced all the layers (including the interface) stress defect states and the active layer 17, thereby improving the off current ratio of the oxide thin film transistor, the threshold voltage, the field effect Gan shift rate and the subthreshold swing. 具体的,在第一次退火结束后,在T2温度下对氧化物薄膜晶体管进行第二次退火,第二次退火的时间为t2,并且第二次退火时退火炉中的温度T2小于第一次退火时退火炉中的温度Tl。 Specifically, after the end of the first annealing is performed at a temperature T2 oxide thin film transistor of the second annealing, the second annealing time is T2, and the second time T2 of the annealing temperature in the annealing furnace is less than the first temperature Tl when annealing lehr. 更具体的,为了保证氧化物薄膜晶体管内的氧原子有效扩散且各膜层内的应力和缺陷态能有效降低,第二次退火时退火炉中的温度T2例如为150 °C_250°C,并且第二次退火时退火炉中的温度T2低于第一次退火时退火炉中的温度Tl,第二次退火的时间t2至少为60分钟。 More specifically, in order to ensure an oxygen atom in the oxide thin film transistor and the effective diffusion and the stress state of defects in each layer can effectively reduce the temperature of the second annealing furnace annealing T2, for example, 150 ° C_250 ° C, and the second time T2 of the annealing furnace annealing temperature is lower than the first annealing temperature Tl annealing furnace, the second annealing time t2 is at least 60 minutes. 另,第二次退火的时间t2和第二次退火时退火炉中的温度T2有关系,第二次退火时退火炉中的温度T2越高,第二次退火的时间t2也越少,但为了使氧化物薄膜晶体管达到第二次退火效果即充分消除所有膜层应力和缺陷态,第二次退火的时间t2至少为60分钟。 Also, when the second annealing time t2 and the second annealing temperature T2 of the annealing furnace in a relationship, the higher the temperature T2 of the annealing furnace when the second annealing, second annealing the less time t2, but in order to achieve the second oxide thin film transistor that is sufficient to eliminate the effect of annealing the film stresses and defects of all states, the second annealing time t2 is at least 60 minutes. 需要进一步说明的是,在对氧化物薄膜晶体管进行第二次退火时,可以先将氧化物薄膜晶体管从退火炉内取出冷却后,再将氧化物薄膜晶体管放入退火炉中进行第二次退火,也可以在第一次退火后,稍事冷却即马上进行第二次退火,而无需在第一退火后由退火炉内取出氧化物薄膜晶体管。 It is further noted that, when the oxide thin film transistor of a second annealing, oxide thin film transistor may be first subjected to a second annealing after cooling is removed from the annealing furnace, then placed in an annealing furnace an oxide thin film transistor , may be performed after the first anneal, i.e., cooling immediately take a second anneal, an oxide thin film transistor without removed from the annealing furnace after the first annealing. 还需要说明的是,在对氧化物薄膜晶体管进行第二次退火时,最好在稳定性气体氛围内退火,例如可以在无氧氛围例如氮气氛围等气氛中进行,可以理解的是,第二次退火也可以在含氧氛围例如空气氛围、氧气氛围等氛围中进行。 Also be noted that, when the oxide thin film transistor is subjected to a second annealing, annealing is preferably within the stability gas atmosphere, for example, oxygen-free atmosphere can be performed in an atmosphere such as nitrogen atmosphere or the like, it is understood that the second annealing may be performed in an oxygen containing atmosphere such as air atmosphere, oxygen atmosphere, etc. atmosphere. 当第二次退火在含氧氛围中进行时,由于第二次退火时退火炉中的温度较低,因此,含氧氛围中的氧原子难以穿过保护层18进入到有源层17中而影响到有源层中的氧空位(载流子的来源)的含量,因此,含氧氛围不会影响载流子的浓度。 When the second annealing is carried out in an oxygen-containing atmosphere, due to the lower temperature second annealing lehr is, therefore, an oxygen atom in the oxygen-containing atmosphere through the protective layer 18 is difficult to enter into the active layer 17 Effect of the oxygen vacancy (carrier source) content of the active layer, thus, an oxygen-containing atmosphere will not affect the carrier concentration.

[0045]下面以具体的实施例来说明本发明采用两段式退火的优异性。 [0045] The following specific examples will be described using the present invention is excellent in resistance two-stage annealing. 图3是氧化物薄膜晶体管A在单一的高温条件下退火后的转移特性曲线图。 FIG 3 is a graph showing transfer characteristics of the oxide thin film transistor A single annealing at high temperature. 图4是氧化物薄膜晶体管B在单一的低温条件下退火后的转移特性曲线图。 FIG 4 is a graph showing transfer characteristics of the oxide thin film transistor B is annealed at a single low temperature. 图5是氧化物薄膜晶体管C采用两段式退火工艺后的转移特性曲线图。 FIG 5 is an oxide thin film transistor is a graph showing transfer characteristics C using the two-stage annealing process. 具体的,图3为氧化物薄膜晶体管A在退火炉内、空气氛围中、260°C的温度下退火2小时后形成的转移特性曲线。 Specifically, FIG. 3 for the transfer characteristics of the oxide A thin film transistor in an annealing furnace, an air atmosphere at a temperature of 260 ° C formed after two hours annealing curve. 图4为氧化物薄膜晶体管B在退火炉内、空气氛围中、170°C的温度下退火2小时后形成的转移特性曲线。 FIG. 4 is a transfer characteristics of the oxide thin film transistor B within the annealing furnace in an air atmosphere at a temperature of 170 ° C formed after two hours annealing curve. 图5为氧化物薄膜晶体管C在退火炉内、空气氛围中、260°C的温度下退火I小时,然后在退火炉内、空气氛围中、170°C的温度下退火I小时后形成的转移特性曲线。 FIG 5 is an oxide thin film transistor C in an annealing furnace, air atmosphere, annealed at a temperature of I h of 260 ° C, and then annealing furnace in air atmosphere to form I h after annealing at a temperature of 170 ° C Transfer characteristic. 图6是由图3-图5中的氧化物薄膜晶体管的转移特性曲线得到的氧化物薄膜晶体管的特性参数表。 FIG 6 is a characteristic parameter table transferred by the oxide thin film transistor characteristics of the oxide thin film transistor of Figures 3-5 curves obtained. 请参照图3-图6,从实验结果可以看到,在退火炉内、空气氛围中、260°C的温度下退火2小时后的氧化物薄膜晶体管A具有较好的场效应迀移率和亚阈值摆幅,但氧化物薄膜晶体管A的开关电流比较小,且阈值电压的负值程度太大;在退火炉内、空气氛围中、170 °C的温度下退火2小时后的氧化物薄膜晶体管B具有较好的阈值电压,但其它特性指标则较差;相比较而言,在退火炉内、空气氛围中、260 0C的温度下退火I小时,然后在退火炉内、空气氛围中、170°C的温度下退火I小时后的氧化物薄膜晶体管C具有最好的综合特性,其具有最高的开关电流比以及较好的场效应迀移率、亚阈值摆幅和阈值电压。 Referring to Figures 3-6, can be seen from the experimental results, the annealing furnace in air atmosphere at a temperature of 260 ° C after annealing 2 hours oxide thin film transistor having a good field effect Gan A shift rate and subthreshold swing, but the oxide thin film transistor a switching current is relatively small, and the degree is too large negative threshold voltage; annealing furnace in air atmosphere, the oxide film after annealing for 2 hours at a temperature of 170 ° C B is preferably a transistor having a threshold voltage, but other characteristics are poor indicators; comparison, in the annealing furnace, air atmosphere, an annealing temperature of 260 0C at I hour, and then in the annealing furnace, air atmosphere, at a temperature of 170 ° C after annealing I C h oxide thin film transistor having the best combination of properties, which has the highest off current ratio and better field effect Gan shift ratio, subthreshold swing and the threshold voltage. 本实验结果证明采用合适的两段退火条件可以有效地改善氧化物薄膜晶体管的器件特性。 The experimental results demonstrate the use of appropriate annealing conditions of the two can effectively improve device characteristics of the oxide thin film transistor.

[0046]综上所述,本发明的氧化物薄膜晶体管的制造方法通过采用两段式退火工艺,SP在高温含氧的环境中对氧化物薄膜晶体管进行第一次退火,在低温环境中对氧化薄膜晶体管进行第二次退火,以对氧化物薄膜晶体管进行退火处理,从而使本发明的氧化物薄膜晶体管的制造方法既有利于氧原子扩散进入有源层,又有利于改善氧化物薄膜晶体管的所有膜层的特性。 [0046] In summary, a method for producing an oxide thin film transistor of the present invention, SP oxide thin film transistor of the first anneal is performed in a high temperature atmosphere containing oxygen by two-stage annealing process, a low temperature environment oxide thin film transistor is a second annealing process for annealing the oxide thin film transistor, a method for producing such an oxide thin film transistor of the present invention is conducive to the oxygen atoms diffuse into the active layer, and it helps to improve the oxide thin film transistor All the characteristics of the film.

[0047]以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。 [0047] The above are only preferred embodiments of the present invention only, not limitation of the present invention in any form, although the invention has been disclosed above by the preferred embodiments, but not intended to limit the present invention, anyone familiar with Those skilled in the art, without departing from the scope of the technical solution of the present invention, when the content of the above techniques can be used to make minor modifications disclosed as equivalent variations or modifications equivalent embodiments, but all without departing from the technical content of the present invention, according to technical essence of the invention is a simple modification of any of the above embodiments made equivalent modifications and variations, provided they fall within the scope of the present invention.

Claims (10)

  1. 1.一种氧化物薄膜晶体管的制造方法,其特征在于,包括以下步骤: 提供一基板; 在所述基板上形成栅极; 在所述基板上形成覆盖所述栅极的栅极绝缘层,其中所述栅极绝缘层具有第一区域、第二区域以及第三区域,其中所述第二区域位于所述栅极的正上方,所述第一区域与所述第三区域分别位于所述第二区域的两侧; 在所述栅极绝缘层的第一区域及第三区域分别形成漏极及源极; 在所述栅极绝缘层的第二区域上形成有源层; 在所述漏极、所述有源层及所述源极上形成保护层; 在有氧氛围内,将所述氧化物薄膜晶体管置于退火炉中进行第一次退火,其中,第一次退火时退火炉中的温度Tl的范围为200°c-400°c;以及在第一次退火完成后,将所述氧化物薄膜晶体管置于退火炉中进行第二次退火,其中,第二次退火时退火炉中的温度T2的范围为150°C-250°C 1. A method for producing an oxide thin film transistor, comprising the steps of: providing a substrate; forming a gate electrode on the substrate; forming a gate electrode overlying the gate insulating layer on the substrate, wherein the gate insulating layer having a first region, a second region and a third region, wherein the second area is located directly above the gate, the first region and the third region are respectively located sides of the second region; forming a first region and a third region of the gate insulating layer of the drain and source, respectively; forming an active layer on the gate insulating layer, a second region; the drain electrode, the active layer and the source electrode is formed on the protective layer; in the oxygen atmosphere, the oxide thin film transistor is placed first anneal is performed in an annealing furnace, wherein the first annealing back when and after the first annealing is completed, the oxide thin film transistor disposed in a second annealing lehr, wherein the second annealing; Tl furnace in the temperature range of 200 ° c-400 ° c range lehr temperature T2 of 150 ° C-250 ° C 并且所述第二次退火时退火炉中的温度T2低于所述第一次退火时退火炉中的温度Tl。 And the second time T2 of the annealing furnace annealing temperature lower than the temperature Tl of the first annealing when the annealing furnace.
  2. 2.如权利要求1所述的氧化物薄膜晶体管的制造方法,其特征在于,所述有氧氛围中的氧气含量按体积比例计算为21%_100%。 The method for producing an oxide thin film transistor according to claim 1, characterized in that the oxygen content of the oxygen in the atmosphere is calculated as 21% _100% by volume ratio.
  3. 3.如权利要求2所述的氧化物薄膜晶体管的制造方法,其特征在于,在退火炉中对所述氧化物薄膜晶体管进行所述第一次退火时,所述第一次退火的时间至少为40分钟。 3. The method for producing an oxide thin film transistor according to claim 2, wherein the first anneal is performed on the oxide thin film transistor in an annealing furnace, annealing the first time period of at least 40 minutes.
  4. 4.如权利要求3所述的氧化物薄膜晶体管的制造方法,其特征在于,所述第二次退火的时间为至少为60分钟。 The method for producing an oxide thin film transistor according to claim 3, wherein said second annealing time is at least 60 minutes.
  5. 5.如权利要求2所述的氧化物薄膜晶体管的制造方法,其特征在于,所述有氧氛围为空气或者纯氧气或者氧气与氮气的混合气体。 The method for producing an oxide thin film transistor according to claim 2, wherein said oxygen atmosphere is air or pure oxygen or a mixed gas of oxygen and nitrogen.
  6. 6.如权利要求1所述的氧化物薄膜晶体管的制造方法,其特征在于,所述第二次退火是在无氧氛围内进行。 The method for producing an oxide thin film transistor according to claim 1, wherein said second annealing is performed in an oxygen-free atmosphere.
  7. 7.如权利要求1所述的氧化物薄膜晶体管的制造方法,其特征在于,在所述漏极、所述有源层及所述源极上形成保护层的步骤与对氧化物薄膜晶体管进行第一次退火的步骤之间还包括以下步骤: 在所述保护层的位于所述漏极一侧的区域的上方形成像素电极。 The method for producing an oxide thin film transistor according to claim 1, wherein, in the drain, the active layer and the step of forming the protective layer on the source electrode and the oxide thin film transistor between the first anneal step further comprises the steps of: forming a pixel electrode over the protective layer located on the side of the drain region.
  8. 8.如权利要求7所述的氧化物薄膜晶体管的制造方法,其特征在于,所述保护层正对所述漏极的区域形成有接触孔,所述像素电极通过所述接触孔与所述漏极连接。 The method for producing an oxide thin film transistor according to claim 7, wherein said protective layer being formed with a contact hole for the drain region of the pixel electrode through the contact hole with the drain connection.
  9. 9.如权利要求1所述的氧化物薄膜晶体管的制造方法,其特征在于,所述漏极及所述源极与所述有源层连接。 9. The method for producing an oxide thin film transistor according to claim 1, wherein said drain and said source connected to the active layer.
  10. 10.如权利要求1所述的氧化物薄膜晶体管的制造方法,其特征在于,所述有源层为氧化物半导体层。 10. The method for producing an oxide thin film transistor according to claim 1, wherein said active layer is an oxide semiconductor layer.
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