TWI473144B - Apparatus for forming film - Google Patents

Description

Film forming device

The present invention relates to a film forming apparatus for fabricating, for example, a thin film solar cell.

Among the materials currently used for solar cells, most of the materials of the single crystal Si type and the polycrystalline Si type are occupied, and there is a concern that the Si material is insufficient.

Therefore, in recent years, there has been an increase in demand for a thin film solar cell in which a thin film Si layer is formed, which has a low manufacturing cost and a low risk of material shortage.

Further, in addition to a thin film solar cell having only an a-Si (amorphous germanium) layer of the prior type, recently, a stacked film having improved conversion efficiency by laminating an a-Si layer and a μc-Si (microcrystalline germanium) layer The demand for solar cells has increased.

As a device for forming a thin film Si layer (semiconductor layer) of the thin film solar cell, a plasma CVD (chemical vapor deposition) device is often used.

As a plasma CVD apparatus, a blade-type PE-CVD (plasma-assisted chemical vapor deposition) (plasma CVD) apparatus, a continuous PE-CVD apparatus, and a batch type PE-CVD are known. Device, etc.

In consideration of the conversion efficiency required for the thin film solar cell, it is necessary to ensure a film thickness of about 5 times the film thickness of the amorphous Si layer (1.5 μm) as the film thickness required for the μc-Si layer of the stacked solar cell. about). Further, in the film formation step of the μc-Si layer, it is necessary to uniformly form a high-quality microcrystalline film, and there is a limit to an increase in the deposition rate. Therefore, it is necessary to increase productivity by increasing the number of batches. That is, a device that achieves high throughput at a low film formation speed is required.

In addition, as a CVD apparatus which can improve the productivity and to form a film on a large-sized substrate with high precision, it is known to form a film on a substrate in a state in which the substrate is disposed such that the film formation surface of the substrate is substantially parallel to the direction of gravity. The so-called vertical CVD device. As the vertical CVD apparatus, there is known a device having a carrier in which one of the support substrates and the support wall (holder) are extended in the vertical direction. In this device, a pair of support walls are disposed substantially parallel to each other. The carrier is moved in a direction parallel to the floor surface on which the device is placed in a state in which each of the support wall supporting substrates is carried, and the substrate is transferred to the film forming chamber. A heater for heating each substrate is provided in the deposition chamber so as to correspond to the position between the pair of substrates. Further, a high-frequency electrode (cathode) is disposed on the inner surface sides of both side walls of the film forming chamber, and the film-forming gas supplied to the film forming chamber is plasma-generated by supplying power to the high-frequency electrode (for example, Japanese patent) JP-A-2002-270600).

However, in the above prior art, the temperature in the film forming chamber (in the film forming space) increases with the number of batch processes due to heat generation of the heater or heat generated by discharge of the high frequency electrode (in the film forming chamber) The number of membrane steps increases and becomes high. As the temperature in the deposition chamber rises, even if the output of the heater is suppressed, the temperature of the substrate rises due to radiant heat or the like and is higher than the desired temperature. Therefore, there is a problem that the quality of the film formed on the substrate is lowered as the number of batch processes increases.

The present invention has been made in order to solve the above problems, and provides a film forming apparatus which can maintain the temperature of a substrate constant and which can stabilize the quality of a film formed on a substrate even if the number of batch processes is increased.

In order to solve the above problems, a film forming apparatus according to an aspect of the present invention includes a cathode unit and an anode disposed opposite to the cathode unit, and is formed on a substrate disposed between the cathode unit and the anode. membrane. Here, the cathode unit includes: an electrode plate to which a voltage is applied; a temperature adjustment fluid flow path (circulation path) provided on the electrode plate and circulating the temperature adjustment fluid; and a shower plate contacting the electrode plate And a plurality of holes for supplying a process gas to the film formation surface of the substrate; a heat exchange plate disposed between the electrode plate and the shower plate and contacting the electrode plate and the shower plate; and a gas a flow path (a flow path) provided on the heat exchange plate, introducing the process gas into the heat exchange plate, and guiding the process gas introduced into the heat exchange plate to the plurality of the shower plates hole.

In the film forming apparatus having such a configuration, the temperature adjusting fluid is circulated in the temperature regulating fluid flow path provided on the electrode plate, and the temperature of the electrode plate can be kept constant. The heat of the electrode plate is transferred to the shower plate via the heat exchange plate. Thereby, the temperature of the shower plate can be kept constant. By keeping the temperature of the shower plate fixed, the temperature rise of the substrate can be suppressed. Therefore, even if the number of batch processes is increased, that is, the number of times of performing the film forming step in the film forming chamber is increased, the quality of the film formed on the substrate can be stabilized. Further, a gas flow path is provided on the heat exchange plate. Therefore, even when a heat exchange plate is provided between the electrode plate and the shower plate, the process gas can be surely supplied to the film formation surface of the substrate via a plurality of holes provided in the shower plate. Therefore, a high quality film can be formed on the substrate.

In the film forming apparatus according to the aspect of the invention, the heat exchange plate includes a first contact surface and a second contact surface, the first contact surface having a first recess formed by the uneven processing and contacting the electrode The second contact surface of the plate has a second concave portion formed by the uneven processing and is in contact with the electrode shower plate, and the positions of the first concave portion and the second concave portion are preferably corresponding to the above-described shower plate The position of a plurality of holes.

In the film forming apparatus having such a configuration, a space for flowing the process gas can be reliably formed (ensured) around the hole of the shower plate. Therefore, it is possible to prevent, for example, a situation in which the hole of the shower plate is clogged due to a decrease in processing accuracy when the heat exchange plate is processed. Therefore, it is not necessary to increase the processing accuracy when processing the heat exchange plate to more than necessary, and the processing cost can be suppressed (reduced).

In the film forming apparatus according to an aspect of the present invention, the flow path for the temperature adjustment fluid is preferably such that the temperature of the electrode plate gradually decreases from a peripheral portion of the electrode plate toward a central portion of the electrode plate. The way it is configured.

In other words, the shape of the flow path for the temperature adjustment fluid or the pattern of the circulation path is designed such that the temperature of the electrode plate gradually decreases from the outer peripheral portion of the electrode plate toward the central portion of the electrode plate.

If the substrate is subjected to temperature unevenness (difference in temperature), there is a possibility that the substrate is deformed. In particular, when the temperature of the center portion of the substrate is higher than the temperature of the outer peripheral portion of the substrate, thermal movement at the center portion of the substrate becomes difficult, and the substrate is damaged by thermal deformation.

On the other hand, when the temperature is managed so as to obtain a uniform temperature of the entire substrate, although no thermal deformation occurs, in the film forming step of forming a film on a large substrate, it is difficult to manage the temperature to make the substrate as a whole. Get a uniform temperature. Therefore, in the film forming apparatus according to an aspect of the present invention, the temperature of the electrode plate is gradually lowered in a direction from a peripheral portion of the electrode plate toward a central portion of the electrode plate, whereby the substrate can be made The temperature at the center is lower than the outer circumference. As a result, damage to the substrate due to thermal deformation can be prevented.

In the film forming apparatus according to one aspect of the invention, it is preferable that the heat exchange plate has a pair of first sheets and second sheets, and the first sheet and the second sheet are along the The cathode unit is superposed on the direction opposite to the anode.

In the film forming apparatus having such a configuration, the gas flow path can be easily formed inside the heat exchange plate. Specifically, a first groove is formed on the first surface of the first sheet that is in contact with the second sheet, and a second groove is formed on the second surface of the second sheet that is in contact with the first sheet. The first surface and the second surface are in contact with each other on the joint surface between the first sheet and the second sheet. The gas flow path can be formed in the heat exchange plate by superposing the position of the first groove formed in the first sheet and the position of the second groove formed in the second sheet. Therefore, the processing steps for forming the gas flow path can be simplified as compared with the case where the gas flow path is formed on one plate, so that the processing cost can be reduced.

In the film forming apparatus according to an aspect of the present invention, it is preferable that the process gas introduced into the heat exchange plate flows toward a position close to the electrode plate in the gas flow path, and is oriented toward the electrode plate. The above process gas system flowing at a position flows from the electrode plate toward the shower plate.

In other words, in the flow path of the gas flow path, the process gas introduced into the heat exchange plate is temporarily discharged to the space on the side of the electrode plate. Thereafter, the process gas is led out from the space on the electrode plate side toward the shower plate side.

In the film forming apparatus having such a configuration, the process gas introduced into the heat exchange plate can be partially dispersed in the entire space formed between the electrode plate and the shower plate, and thereafter directed toward the plurality of plates provided on the shower plate. The holes guide the process gas. Therefore, the process gas can be uniformly ejected from the entire shower plate, so that the film can be uniformly formed on the entire substrate.

According to the present invention, the temperature adjusting fluid can be circulated in the temperature regulating fluid flow path provided on the electrode plate, so that the temperature of the electrode plate can be kept constant. The heat of the electrode plate is transmitted to the shower plate via the heat exchange plate. Thereby, the temperature of the shower plate can be kept constant. The temperature rise of the substrate can be suppressed by keeping the temperature of the shower plate fixed. Therefore, even if the number of batch processes is increased, that is, the number of times of performing the film forming step in the film forming chamber is increased, the quality of the film formed on the substrate can be stabilized.

Hereinafter, embodiments of the film forming apparatus of the present invention will be described based on the drawings.

Further, in each of the drawings used in the following description, each component is a size that is identifiable in the drawing. Therefore, the size and ratio of each component are appropriately different from the actual situation.

(film forming device)

Fig. 1 is a view schematically showing the configuration of a film forming apparatus.

As shown in FIG. 1, the film forming apparatus 10 includes a film forming chamber 11, a loading/unloading chamber 13, a substrate loading and unloading chamber 15, a substrate handling robot 17, and a substrate housing cassette 19.

In the film forming chamber 11, for example, a microcrystalline germanium film can be simultaneously formed on a plurality of substrates W.

The loading and unloading chamber 13 can simultaneously accommodate the substrate W (hereinafter referred to as a pre-process substrate) carried into the film forming chamber 11 and the substrate W (hereinafter referred to as a processed substrate) carried out from the film forming chamber 11.

In the following description, the "pre-treatment substrate" refers to the substrate before the film formation process (the substrate before the film formation process), and the "sub-process substrate" refers to the substrate after the film formation process (the substrate after the film formation process) ).

In the substrate loading and unloading chamber 15, the pre-processed substrate W is mounted on the carrier 21 (see FIG. 11), or the processed substrate W is removed from the carrier 21.

The substrate loading and unloading robot 17 attaches the substrate W to the carrier 21 or detaches the substrate W from the carrier 21.

The substrate storage cassette 19 is configured to accommodate a plurality of substrates W when the substrate W is transported to another processing chamber different from the film forming apparatus 10 .

In the present embodiment, four substrate forming lines 16 including the film forming chamber 11, the loading and unloading chamber 13, and the substrate loading and unloading chamber 15 are provided.

Further, the substrate loading and unloading robot 17 can be moved on the rail 18 disposed on the floor surface, and the substrate W is delivered to all of the substrate film forming lines 16 by one substrate loading and unloading robot 17.

Further, the substrate film forming module 14 is formed by integrating the film forming chamber 11 and the loading/unloading chamber 13 and having a size that can be carried by a transport truck.

(film forming chamber)

2 and 3 schematically show the configuration of the film forming chamber 11, and Fig. 2 is a perspective view seen from a certain position, and Fig. 3 is a perspective view seen from a position different from the position of Fig. 2. 4 is a side view of the film forming chamber 11.

As shown in FIG. 2, the film forming chamber 11 is formed in a box shape.

On the first side surface 23 of the film forming chamber 11 connected to the loading/unloading chamber 13 (the side surface of the film forming chamber 11 shown in the front side of the drawing in Fig. 2), three carriers 21 on which the substrate W is mounted are formed. The carrier 24 is carried out by the carrier.

A stopper 25 that opens and closes the carrier carrying-in/out port 24 is provided in the carrier carrying-in/out port 24. When the shutter 25 is closed, the carrier carry-in/out port 24 is closed to ensure the airtightness of the film forming chamber 11. Further, an exhaust pipe 29 for decompressing the inside of the film forming chamber 11 into a vacuum environment is connected to the lower portion of the side surface of the film forming chamber 11, and a vacuum pump 30 (see Fig. 4) is provided in the exhaust pipe 29.

As shown in FIG. 3, on the second side surface 27 (the side surface of the film forming chamber 11 shown in the front side of the drawing in FIG. 3) on the opposite side of the first side surface 23, three places are mounted on the substrate W. The electrode unit 31 of the film is formed. The electrode units 31 are detachable from the film forming chamber 11. The first end (one end) of the hot water pipe 28 is connected to each of the electrode units 31. A hot water circulator 32 is connected to the second end (the other end) of each of the hot water pipes 28. The hot water circulator 32 supplies hot water to each of the electrode units 31 via the hot water pipe 28 .

Further, the hot water (cooling water) of the present embodiment corresponds to the "temperature adjusting fluid" of the present invention. The temperature-regulated flow system has a fluid at a temperature above room temperature (27 ° C). The temperature adjusting fluid heats the cathode intermediate member 76 when the temperature of the cathode intermediate member 76 is room temperature. Further, when the temperature of the cathode intermediate member 76 is higher than the temperature of the temperature adjustment fluid by performing the film formation step, the temperature adjustment fluid cools the cathode intermediate member 76. Further, the cathode intermediate member 76 is cooled by the temperature adjustment fluid so that the temperature of the cathode intermediate member 76 does not gradually rise due to continuous film formation.

Further, in FIG. 3, a configuration in which three hot water pipes 28 connected to the electrode unit 31 are connected to one hot water circulator 32 is shown, but the hot water circulator 32 may also be used for each electrode unit. 31 and set.

(electrode unit)

5 and FIG. 6 schematically show the configuration of the electrode unit 31, FIG. 5 is a perspective view seen from a certain position, and FIG. 6 is a perspective view seen from a position different from the position of FIG. Fig. 7 is a partial cross-sectional view showing the cathode unit 68 and the anode 67 (opposing electrode).

As shown in FIGS. 5 to 7, the electrode unit 31 can be attached and detached to the opening portion 26 formed at three locations on the second side surface 27 of the film forming chamber 11 (see FIG. 3). A wheel 61 is disposed at a lower portion of the electrode unit 31, and the electrode unit 31 is movable on the floor surface.

Further, the bottom plate portion 63 to which the wheel 61 is attached is provided with a side plate portion 63 that rises in the vertical direction from the bottom plate portion 62. The side plate portion 63 is formed to be larger than the opening portion 26 so as to block the opening portion 26 of the second side surface 27 of the film forming chamber 11. That is, the side plate portion 63 constitutes a part of the wall surface of the film forming chamber 11.

The first plate surface 65 of the side plate portion 63 (the surface facing the inside of the film forming chamber 11 on one side of the side plate portion 63) is provided with a surface for forming a film on the substrate W and with the substrate W. The anode 67 and the cathode unit 68 are disposed in a different manner.

That is, the anode 67 is disposed on the electrode unit 31 so as to sandwich the cathode unit 68 from both sides of the cathode unit 68, and a film formation space 81 is formed between each cathode unit 68 and the anode 67.

By arranging the substrate W in each of the deposition spaces 81 and 81, the film can be simultaneously formed on the two substrates W by one electrode unit 31.

Further, a drive mechanism 71, a matching box 72, and a connecting portion 64 are attached to the second plate surface 69 (the other surface of the side plate portion 63) of the side plate portion 63. The drive mechanism 71 is for driving the anode 67. The matching box 72 is for supplying power to the cathode unit 68 when a film is formed on the substrate W. A hot water pipe 28 (see FIG. 3) is connected to the connecting portion 64. Further, a connection portion (not shown) that is used as a pipe for supplying a film forming gas (process gas) to the cathode unit 68 is formed in the side plate portion 63.

(anode)

As shown in FIG. 7, a heater H is incorporated in the anode 67 as a temperature control means for adjusting the temperature of the substrate W. Further, the two anodes 67 and 67 can be moved in the horizontal direction in the direction in which the anode 67 approaches the cathode unit 68 and the anode 67 leaves the cathode unit 68 by the driving mechanism 71 provided in the side plate portion 63. The drive mechanism 71 controls the distance between the substrate W and the cathode unit 68.

Specifically, when a film is formed on the substrate W, the two anodes 67 and 67 move toward the cathode unit 68 (see an arrow in FIG. 7) and abut against the substrate W. Further, the two anodes 67 and 67 move so as to approach the cathode unit 68, and the distance between the substrate W and the cathode unit 68 is adjusted to a desired distance. Thereafter, a film formation process of forming a film on the substrate W is performed, and after the film formation process is completed, the anodes 67 and 67 are moved away from the cathode unit 68. The drive mechanism 71 controls the positions of the anodes 67, 67 in this manner, whereby the substrate W can be easily taken out from the electrode unit 31.

Further, the anode 67 is attached to the drive mechanism 71 via a hinge (not shown) or the like, and in a state where the electrode unit 31 is pulled out from the film forming chamber 11, the surface 67A of the anode 67 opposed to the cathode unit 68 is rotatable ( The opening is substantially parallel to the first plate surface 65 of the side plate portion 63.

That is, the anode 67 is configured to be rotatable substantially 90° from the vertical direction of the bottom plate portion 62 (see FIG. 5).

(cathode unit)

FIG. 8 is a perspective view showing the cathode intermediate member 76. Fig. 9 is an enlarged cross-sectional view showing a portion indicated by a symbol A in Fig. 7.

As shown in FIGS. 7 to 9, the cathode unit 68 includes a shower plate 75 (cathode), a cathode intermediate member 76 (electrode plate), a heat exchange plate 91, an exhaust pipe 79, and a stray capacitance body 82.

The cathode intermediate member 76 is in contact with the outer peripheral portion of the shower plate 75. The heat exchange plate 91 is provided in a space portion 77 formed between the shower plate 75 and the cathode intermediate member 76. The exhaust pipe 79 is provided on the outer peripheral portion of the cathode intermediate member 76.

The shower plates 75 and 75 are formed of stainless steel or the like, and are disposed opposite to the surfaces (both sides) of the cathode intermediate member 76 so as to sandwich the cathode intermediate member 76, and are opposed to the anodes 67 and 67. A plurality of small holes 74 are formed in each of the shower plates 75 and 75, and the film forming gas is ejected toward the substrate W through the small holes 74. The shower plates 75 and 75 are connected to the matching box 72 via the cathode intermediate member 76, and function as a cathode (high-frequency electrode).

The cathode intermediate member 76 has a pair of first intermediate member sheets 76a and second intermediate member sheets 76b. The first intermediate member piece 76a and the second intermediate member piece 76b include aluminum or the like and are formed in a flat plate shape. The first intermediate member piece 76a and the second intermediate member piece 76b are superposed on each other so as to face each other in a direction perpendicular to the surface of the cathode intermediate member 76. The first intermediate member piece 76a and the second intermediate member piece 76b are integrally fastened (fixed) by bolts 93. In other words, in the pair of intermediate member sheets 76a and 76b, the female thread portion 94 is formed in the first intermediate member sheet 76a, and the bolt hole 95 (through hole) is formed in the second intermediate member sheet 76b. A bore portion 95a is formed in the bolt hole 95, and the head of the bolt 93 does not protrude from the surface of the cathode intermediate member 76, but is located in the bore portion 95a.

At the outer peripheral portion of the cathode intermediate member 76, the flange portion 73 which is in contact with the shower plates 75, 75 is integrally formed with the cathode intermediate member 76. Further, the cathode intermediate member 76 is electrically connected to a high-frequency power source (not shown) via the matching box 72. Thereby, in order to generate plasma between the shower plate 75 and the anode 67, a voltage of the same potential and the same phase is applied to each of the shower plates 75 and 75 via the cathode intermediate member 76.

The matching box 72 has a function of matching (impedance matching) between the cathode intermediate member 76 and the high-frequency power source, and is provided on the second plate surface 69 of the side plate portion 63 of the electrode unit 31. A feeding point to which a voltage supplied from a high-frequency power source via the matching box 72 is applied is disposed on the cathode intermediate member 76. Each of the power feeding points is located on the upper side surface and the lower side surface in the height direction of the cathode intermediate member 76 (the direction perpendicular to the floor surface), that is, a total of two power feeding points are disposed on the cathode intermediate member 76. Wiring for electrically connecting the power supply point to the matching box 72 is disposed between the power supply points and the matching box 72.

The wiring is laid out from the matching box 72 and along the outer circumference of the cathode intermediate member 76 to reach the respective feeding points. Further, the outer periphery of the cathode intermediate member 76 and the periphery of the feed point and the wiring are surrounded by an insulating member 89 containing, for example, alumina or quartz.

Here, in the cathode intermediate member 76, a water pipe 92 (a temperature adjustment fluid flow path and a cooling flow path) through which the hot water supplied from the hot water circulator 32 (see FIG. 3) flows is buried. The water pipe 92 includes an upper water passage 92a, an intermediate water passage 92b, and a lower water passage 92c. The upper water passage 92a is laid on the upper portion in the height direction of the cathode intermediate member 76 (the upper side in FIG. 8). The intermediate water passage 92b is laid in the center of the height direction of the cathode intermediate member 76. The lower water passage 92 is laid in a lower portion of the cathode intermediate member 76 in the height direction (the lower side in FIG. 8).

The upper water passage 92a extends from the side plate portion 63 of the electrode unit 31 toward the center of the cathode intermediate member 76 in the center position of the cathode intermediate member 76 in the height direction (symbol 200). Further, the upper water passage 92a is bent toward the upper portion in the height direction (symbol 201) at a position close to the side plate portion 63 of the cathode intermediate member 76 (near the root portion 76c), and extends toward the upper portion in the height direction (symbol 202). Further, the upper water passage 92a is bent at a position closer to the side plate portion 63 (near the root portion 76c) and higher in the height direction (symbol 203) toward the horizontal direction of the cathode intermediate member 76 (relative to the floor surface). The direction of the horizontal direction) and the front end portion 76d of the cathode intermediate member 76 extends (symbol 204). Further, the upper water passage 92a is bent toward the lower portion in the height direction (symbol 205) at a position close to the front end portion 76d of the cathode intermediate member 76, and slightly extended toward the lower portion in the height direction (symbol 206). Further, the upper water passage 92a is bent at the center position in the height direction (symbol 207), and slightly extends from the front end portion 76d of the electrode unit 31 toward the side plate portion 63 (symbol 208). Further, the upper water passage 92a is bent at a position indicated by reference numerals 209 and 210, and extends in the horizontal direction as indicated by reference numeral 211, and is bent at a position indicated by reference numeral 212. In this manner, the upper water passage 92a is formed to be folded back toward the side plate portion 63. Further, the upper water passage 92a is bent in a U shape so as to include the position indicated by reference numeral 212, and is connected to the intermediate water passage 92b.

The intermediate water passage 92b is located at the center in the height direction of the cathode intermediate member 76, and extends from the position of the cathode intermediate member 76 near the side plate portion 63 (near the root portion 76c) toward the position close to the front end portion 76d (symbol 213) and is bent into a U shape. The shape extends from a position close to the front end portion 76d toward a position near the root portion 76c (symbol 214). That is, the intermediate water passage 92b is formed to reciprocate once in the horizontal direction.

The lower water passage 92c is connected to the intermediate water passage 92b at a position indicated by a symbol 215 bent in a U shape. The lower water passage 92c extends in the horizontal direction from the position indicated by reference numeral 215 toward the front end portion 76d, and is bent at a position indicated by reference numerals 216 and 217, and extends slightly in the horizontal direction toward the front end portion 76d (symbol 208). The lower water passage 92c slightly extends toward the lower portion in the height direction (symbol 219). Further, the lower water passage 92c is bent at a position close to the front end portion 76d and lower in the height direction (symbol 220), and extends toward the side plate portion 63 in the horizontal direction of the cathode intermediate member 76 (symbol 221). Further, the lower water passage 92c is bent at a position closer to the side plate portion 63 (near the root portion 76c) and lower in the height direction (symbol 222), and extends toward the upper portion in the height direction (symbol 223). Further, the lower water passage 92c is bent toward the side plate portion 63 (symbol 224) at a position close to the side plate portion 63 of the cathode intermediate member 76 (near the root portion 76c), and extends toward the side plate portion 63 of the electrode unit 31 at the center position in the height direction ( Symbol 225). In this manner, the lower water passage 92c is formed to be folded back toward the side plate portion 63, and is formed to return to the center position in the height direction.

Further, the water pipe 92 is formed by a water path in which one line of a straight line and a curve is combined, and the upper water path 92a, the intermediate water path 92b, and the lower water path 92c communicate with each other. Moreover, as shown in FIG. 7, the water piping 92 is arrange|positioned between the intermediate member sheets 76a and 76b. The intermediate member sheets 76a and 76b are joined by welding, and the water piping 92 is formed by stainless steel or the like.

Further, the cathode intermediate member 76 has an outer peripheral portion 76e and a central portion 76f. As shown in Fig. 8, in the cathode intermediate member 76, the upper water passage 92a, the intermediate water passage 92b, and the lower water passage 92c are arranged in such a manner that the water passage is disposed in the center portion 76f.

Further, in the present embodiment, the structure in which the cathode intermediate member 76 is formed with a linear water passage has been described. However, this configuration is only one embodiment of the present invention, and the present invention is not limited to this configuration. For example, a branch portion in which one water pipe is branched into two or more water pipes may be provided in the cathode intermediate member 76. Further, the pattern of the water passage is appropriately determined such that the water passage is concentrated on the center portion 76f.

Fig. 10 is a plan view showing the heat exchange plate 91.

As shown in FIGS. 7, 9, and 10, the heat exchange plate 91 includes aluminum and is provided in a space portion 77 formed between the shower plate 75 and the cathode intermediate member 76. Further, the heat exchange plate 91 includes a pair of the first plate piece 101 and the second plate piece 102. The first plate piece 101 and the second plate piece 102 are formed in a flat shape so as to correspond to the shape of the space portion 77.

The first plate piece 101 and the second plate piece 102 are superposed on each other in the direction in which the cathode unit 68 and the anode 67 oppose each other, and are housed in the space portion 77, and are fastened (fixed) to the cathode intermediate member 76 by bolts 97. .

In other words, bolt holes 98 (through holes) are formed in each of the pair of first plate pieces 101 and second plate pieces 102, and a female screw portion 99 is formed in the cathode intermediate member 76. A bore portion 98a is formed in the bolt hole 98, and the head of the bolt 97 does not protrude from the surface of the heat exchange plate 91 but is located in the bore portion 98a.

Further, the first sheet 101, which is one of the pair of sheets, has the surface 101a (first contact surface), and the other sheet, that is, the second sheet 102 has the surface 102a (second contact surface).

The surface 101a is in contact with the cathode intermediate member 76, and the surface 102a is in contact with the shower plate 75.

An embossing process is applied to the surface 101a of the first sheet 101, and a plurality of first recesses 103 are formed on the surface 101a by the embossing.

An embossing process is also applied to the surface 102a of the second sheet 102, and a plurality of second recesses 104 are formed on the surface 102a by the embossing.

The front end of the partition wall 105 (standing wall) formed around the first recess 103 of the first plate piece 101 is in contact with the cathode intermediate member 76.

The front end of the partition wall 106 (standing wall) formed around the second recess 104 of the second plate piece 102 is in contact with the shower plate 75.

In such a configuration, heat exchange is performed between the cathode intermediate member 76 and the shower plate 75 via the heat exchange plate 91.

Furthermore, the partition wall 106 may also be formed in a separate column shape. When the partition wall 106 is formed in a separate column shape, the film forming gas flows around the partition wall 106 in the space between the shower plate 75 and the second plate piece 102. In this configuration, not only the film forming gas is supplied to each of the plurality of second recesses 104 but the film forming gas is supplied to the second recess 104 which is a space defined by the partition wall 106, and the film forming gas passes through the cluster. The small holes 74 of the plate 75 are supplied to the film formation space 81.

Further, similarly, the partition wall 105 may be formed in a separate column shape. When the partition wall 105 is formed in a separate column shape, the film forming gas flows around the partition wall 105 in the space between the cathode intermediate member 76 and the first plate piece 101. In this configuration, the film forming gas is not supplied to each of the plurality of first recesses 103, but the film forming gas is supplied to the first recess 103 (space 77) which is a space defined by the partition wall 105. The film forming gas is supplied into the second concave portion 104 through the third flow path 110.

Further, the embossing process according to the present embodiment is one of the processing methods for forming the uneven portion (the first concave portion 103 and the second concave portion 104) on the surfaces 101a and 102a. As long as it is a method of forming such a concavo-convex portion, a well-known method can also be used.

The thickness of the partition wall 105 of the first plate piece 101 and the partition wall 106 of the second plate piece 102 is set such that the desired heat capacity can be exchanged between the cathode intermediate member 76 and the shower plate 75. The thickness of the partition wall 105 and the thickness of the partition wall 106 may also be different.

Further, the second concave portion 104 of the second sheet 102 that is in contact with the shower plate 75 is formed at a position corresponding to the plurality of small holes 74 formed in the shower plate 75. Further, the shape or size of the second recessed portion 104 is determined such that the small hole 74 is blocked by the partition wall 106 of the second plate piece 102.

The heat exchange plate 91 is formed with a gas flow path 107 for introducing a film forming gas supplied from a gas supply device (not shown) into the cathode unit 68.

Moreover, as shown in FIG. 10, the gas flow path 107 includes the first flow path 108, the second flow path 109, and the third flow path 110. The first flow path 108 disperses the film forming gas introduced into the heat exchange plate 91 over the entire heat exchange plate 91, for example, in the height direction of the heat exchange plate 91 (the direction perpendicular to the floor surface) And extending in the horizontal direction (the horizontal direction with respect to the floor surface). Further, as shown in FIG. 9, a second flow path 109 extending from the first flow path 108 toward the cathode intermediate member 76 is formed, and the second flow path 109 penetrates in the thickness direction of the first plate piece 101. The second flow path 109 connects the first flow path 108 to the space 77 of the first recess 103. Further, the third flow path 110 is formed to penetrate in the thickness direction of the first plate piece 101 and the second plate piece 102. The third flow path 110 connects the space 77 of the first recess 103 and the space of the second recess 104.

A groove 108a (first groove) is formed in the first surface 101b of the first plate 101 that is in contact with the second plate piece 102, and a second surface 102b of the second plate piece 102 that is in contact with the first plate piece 101 is formed on the first surface 101b. Slot 108b (second groove). Further, on the joint surface between the first sheet 101 and the second sheet 102, the first surface 101b and the second surface 102b are in contact with each other, and the position of the groove 108a coincides with the position of the 108b (overlap). The first flow path 108 is formed. Further, the groove forming the first flow path 108 may be formed on either of the first sheet 101 or the second sheet 102.

The second flow path 109 is formed to avoid the partition wall 105 of the first sheet piece 101.

The third flow path 110 is formed at a position where the first concave portion 103 overlaps the second concave portion 104 in the overlapping direction of the first plate piece 101 and the second plate piece 102. In other words, the third flow path 110 allows the first concave portion 103 of the first plate piece 101 and the second concave portion 104 of the second plate piece 102 to communicate with each other.

In the heat exchange plate 91 having such a configuration, the film forming gas introduced into the heat exchange plate 91 flows through the first flow path 108, and is ejected to the first sheet 101 through the second flow path 109. 1 recess 103 (refer to arrow Y1 in Fig. 9). That is, the film forming gas system flows toward a position close to the cathode intermediate member 76.

Further, the space 77 formed by the first concave portion 103 and the cathode intermediate member 76 is filled with the film forming gas, and the film forming gas is introduced into the second concave portion 104 of the second sheet 102 via the third flow path 110 (see the drawing). Arrow Y2 in 9). Thereafter, the film forming gas is supplied to the substrate W via the small holes 74 of the shower plate 75. That is, the film forming gas flowing toward the position close to the cathode intermediate member 76 flows from the cathode intermediate member 76 toward the shower plate 75.

Here, a pipe 111 made of stainless steel is placed in each of the flow paths 108, 109, and 110. The film forming gas flows in the pipe 111. Therefore, it is possible to prevent the film forming gas from leaking from among the respective flow paths 108, 109, and 110.

As shown in Fig. 7, the exhaust pipe 79 provided at the outer peripheral portion of the cathode intermediate member 76 is for discharging (removing) the film forming gas or the reaction product (powder) of the film forming space 81.

Specifically, the exhaust port 80 is formed so as to communicate with the film forming space 81 formed between the substrate W and the shower plate 75 at the time of performing the film forming step. The exhaust port 80 is formed in plural along the peripheral portion of the cathode unit 68, and is configured to suction and remove the film forming gas or the reaction product (powder) substantially uniformly around the entire periphery of the cathode unit 68.

Further, an opening (not shown) is formed on a surface of the exhaust pipe 79 located below the cathode unit 68 toward the inside of the film forming chamber 11. The film forming gas or the like removed by the exhaust port 80 is discharged into the film forming chamber 11 through the opening. The gas discharged into the film forming chamber 11 is discharged to the outside of the film forming chamber 11 through the exhaust pipe 29 provided at the lower portion of the side surface of the film forming chamber 11.

Further, at least one of the dielectric body and the stray capacitance body 82 is provided between the exhaust pipe 79 and the cathode intermediate member 76, that is, on the outer peripheral surface of the flange portion formed on the cathode intermediate member 76. Further, the stray capacitance body 82 has a buildup space. The exhaust pipe 79 is connected to the ground potential. The exhaust pipe 79 functions as a shield frame to prevent abnormal discharge generated in the shower plate 75 and the cathode intermediate member 76.

Further, a mask 78 is provided on the peripheral portion of the cathode unit 68 so as to cover a portion (region) from the outer peripheral portion of the exhaust pipe 79 to the outer peripheral portion of the cathode intermediate member 76. The mask 78 covers the holding piece 59A (see FIG. 11) of the following holding portion 59 provided on the carrier 21, and is formed integrally with the holding piece 59A at the time of performing the film forming step to be formed in the space portion 77. The film forming gas or reaction product (powder) therein is guided to the gas flow path R of the exhaust pipe 79. That is, a gas flow path R is formed between the mask 78 covering the carrier 21 (holding piece 59A) and the shower plate 75, and between the mask 78 and the exhaust pipe 79.

(loading ‧ removal room)

As shown in Fig. 1, the carrier 21 can be moved between the film forming chamber 11 and the loading and unloading chamber 13, and between the loading and unloading chamber 13 and the substrate loading and unloading chamber 15, in the film forming chamber 11 and the substrate. A moving rail 37 is placed between the loading and unloading chambers 15.

The loading/removing chamber 13 is formed in a box shape.

The side surface (the surface on the lower side in FIG. 1) of the loading/removing chamber 13 is provided with a carrier carrying-out port (not shown) through which the carrier 21 on which the substrate W is mounted. A stopper 36 that can ensure the airtightness of the ‧ extraction chamber 13 is provided at the carrier carry-in/out port. Further, a vacuum pump (not shown) is connected to the loading/unloading chamber 13, and the vacuum pump pressurizes the inside of the ‧ extraction chamber 13 to a vacuum state.

Further, the loading/unloading chamber 13 is provided with a push-pull mechanism (not shown) for moving the carrier 21 along the moving rail 37 between the film forming chamber 11 and the loading/unloading chamber 13.

Further, the loading and unloading chamber 13 is provided with a moving mechanism (not shown) for simultaneously (collectively) storing the pre-processed substrate and the processed substrate. In the plan view seen from the vertical direction in which the floor surface of the film forming apparatus 10 is provided, the moving mechanism moves the carrier 21 by a specific distance in a direction substantially orthogonal to the direction in which the moving rail 37 is laid.

(substrate loading and unloading room)

In the substrate loading and unloading chamber 15, the pre-processed substrate can be mounted with respect to the carrier 21 disposed on the moving rail 37, and the processed substrate can be removed from the carrier 21. Three carriers 21 may be arranged in parallel in the substrate loading and unloading chamber 15.

(substrate handling robot)

The substrate handling robot 17 has a driving arm 45 and has an adsorption portion that adsorbs the substrate W at the front end of the driving arm 45. Further, the drive arm 45 is driven between the carrier 21 disposed in the substrate loading and unloading chamber 15 and the substrate housing cassette 19. Specifically, the driving arm 45 can take out the pre-processed substrate from the substrate housing cassette 19, and mount the pre-process board on the carrier 21 disposed in the substrate loading and unloading chamber 15. Further, the drive arm 45 can remove the processed substrate from the carrier 21 that has returned to the substrate loading and unloading chamber 15, and transport it to the substrate storage cassette 19.

(carrier)

Figure 11 is a perspective view showing the carrier 21. As shown in FIG. 11, the carrier 21 is for conveying the substrate W, and two frames 51 having a frame shape in which the substrate W can be mounted are formed. That is, two substrates W can be mounted on one carrier 21. The upper portions of the two frames 51 and 51 are integrated by the connecting member 52.

Further, a wheel 53 placed on the moving rail 37 is provided above the connecting member 52. The carrier 21 is movable along the moving rail 37 by rolling the wheel 53 on the moving rail 37.

Further, a frame holder 54 is provided at a lower portion of the frame 51 to suppress the substrate W from shaking when the carrier 21 moves. The front end of the frame holder 54 is fitted to a rail member (not shown) having a concave cross-sectional shape provided on the bottom surface of each chamber. Further, in a plan view viewed from the vertical direction of the floor surface of the film forming apparatus 10, a rail member (not shown) is disposed in the direction along the moving rail 37.

When the frame holder 54 is constituted by a plurality of rolls, the substrate W can be conveyed more stably.

Each of the frames 51 has an opening portion 56, a peripheral edge portion 57, and a sandwiching portion 59. When the substrate W is mounted on the frame 51, the surface of the film formation surface of the substrate W is exposed at the opening 56. At the peripheral edge portion 57 of the opening portion 56, both surfaces of the substrate W are sandwiched by the sandwiching portion 59, and the substrate W is fixed to the frame 51.

The holding portion 59 includes a holding piece 59A that abuts against the surface of the substrate W, and a holding piece 59B that abuts against the back surface (back surface) of the substrate W. The holding pieces 59A and 59B are connected via a spring or the like. By the spring, the pressing force is applied toward the direction in which the holding piece 59A and the holding piece 59B approach each other.

Further, in a direction in which the holding piece 59A approaches the holding piece 59B or a direction in which the holding piece 59A leaves the holding piece 59B, the holding piece 59A can move in accordance with the movement of the anode 67. Here, the carrier 21 is attached to one of the moving rails 37. That is, one carrier 21 that can hold a pair of (two) substrates W is mounted on one moving rail 37. Therefore, three pairs of (6) substrates can be held by mounting three carriers 21 in one component film device 10.

(Manufacturing method of thin film solar cell)

Next, a method of forming a film on the substrate W using the film forming apparatus 10 will be described.

Further, in the description, a pattern of the substrate film forming line 16 is used, but in the other three substrate film forming lines 16, a film is formed on the substrate by substantially the same method.

As shown in FIG. 1, the substrate storage cassette 19 in which a plurality of pre-processed substrates (substrate W) are accommodated is placed at a specific position.

Then, the driving arm 45 of the substrate loading/unloading robot 17 is moved, a pre-processing substrate is taken out from the substrate housing 19, and the pre-processing substrate is mounted on the carrier 21 (see FIG. 8) provided in the substrate loading and unloading chamber 15. . At this time, the arrangement direction of the substrate before the processing disposed in the horizontal direction in the substrate housing cassette 19 is changed to the vertical direction, and the substrate before the processing is mounted on the carrier 21. This operation is repeated again, and two pre-process substrates are mounted on one carrier 21.

Further, by repeating this operation, the front substrate is also mounted on each of the remaining two carriers 21 provided in the substrate loading and unloading chamber 15. That is, six sheets of the pre-processed substrate were mounted on the three carriers 21 at this stage.

Then, the three carriers 21 on which the front substrate is processed are moved substantially simultaneously along the moving rail 37, and are housed in the loading/removing chamber 13. After the carrier 21 is housed in the loading/unloading chamber 13, the shutter 36 loaded into the carrier carrying-out port (not shown) of the ‧ take-out chamber 13 is closed. Thereafter, the inside of the loading/unloading chamber 13 is kept in a vacuum state using a vacuum pump (not shown).

Next, in a plan view from the vertical direction in which the floor surface of the film forming apparatus 10 is provided, each of the three carriers 21 is moved by a specific distance in a direction orthogonal to the direction in which the moving rail 37 is applied by using a moving mechanism. .

Then, the shutter 25 of the film forming chamber 11 is opened, and the carrier 21 of the substrate after the film forming process is finished is attached to the loading/removing chamber 13 by using a push-pull mechanism (not shown).

Further, the carrier 21 holding the substrate before the processing is moved to the film forming chamber 11 by using a push-pull mechanism. When the movement of the carrier 21 is completed, the shutter 25 is closed. Further, the inside of the film forming chamber 11 is kept in a vacuum state.

At this time, the substrate before the processing mounted on the carrier 21 is moved in a direction parallel to the surface of the substrate before the processing. In the film forming chamber 11, the front substrate is inserted between the anode 67 and the cathode unit 68 in the vertical direction so that the surface of the front substrate is substantially parallel to the direction of gravity.

Then, the drive mechanism 71 moves the two anodes 67 of the electrode unit 31 in the direction in which the anode 67 approaches the cathode unit 68 (see an arrow in FIG. 7), thereby bringing the anode 67 into contact with the back surface of the substrate W. Further, the front substrate is processed to move toward the cathode unit 68 by pressing the anode 67 by the driving of the driving mechanism 71. Further, the front substrate is moved toward the cathode unit 68 until the gap between the substrate W and the shower plate 75 of the cathode unit 68 becomes a specific distance (film formation distance). Further, the gap (film formation distance) between the substrate W and the shower plate 75 of the cathode unit 68 is 5 to 15 mm, for example, about 5 mm.

At this time, the holding piece 59A of the carrier 21 abutting on the surface of the substrate W is displaced in such a manner as to move away from the holding piece 59B in association with the movement of the substrate W (movement of the anode 67). Further, the substrate W is sandwiched by the anode 67 and the holding piece 59A. When the substrate W moves toward the cathode unit 68, the holding piece 59A abuts against the mask 78, and the movement of the anode 67 is stopped at this point of time.

In this state, the substrate W is heated by the heater H built in the anode 67 so that the temperature of the substrate W becomes a desired temperature. Further, the hot water circulator 32 (see FIG. 3) is driven to circulate the hot water in the water pipe 92 buried in the cathode intermediate member 76. Here, the temperature of the heater H rises to, for example, about 200 ° C, and the temperature of the hot water circulating in the water pipe 92 is set to, for example, about 70 ° C to 80 ° C. The hot water having a temperature of about 70 to 80 ° C is circulated in the water pipe 92, and the heat of the cathode intermediate member 76 is transferred to the shower plate 75 via the heat exchange plate 91. Furthermore, the direction of heat transfer is not limited to the direction from the cathode intermediate member 76 toward the shower plate 75. When the temperature of the substrate W is higher than the temperature of the cathode intermediate member 76, heat is transferred from the shower plate 75 toward the cathode intermediate member 76, and the heat is transferred to the hot water circulating in the water pipe 92. In other words, in this case, the substrate W is cooled by the shower plate 75 by the hot water circulating in the water pipe 92.

In the present embodiment, the substrate W is heated to a temperature of about 170 ° C by the heat of the heater H having a temperature of about 200 ° C and the heat transferred to the shower plate 75, and the temperature is maintained at fixed. That is, the heater H (anode 67) heats the substrate W, and on the other hand, the substrate W is cooled by the shower plate 75 to adjust the temperature of the substrate W.

Further, in the water pipe 92 embedded in the cathode intermediate member 76, the upper water passage 92a, the intermediate water passage 92b, and the lower water passage 92c are formed by a water path in which one straight line and a curved line are combined. Further, as shown in FIG. 8, the upper water passage 92a, the intermediate water passage 92b, and the lower water passage 92c are densely disposed to the water pipe 92 so as to be closer to the center portion 76f than the outer peripheral portion 76e of the cathode intermediate member 76. Therefore, in the cathode intermediate member 76, the temperature of the center portion 76f is lower than the temperature of the outer peripheral portion 76e, and the temperature gradually becomes lower in the direction from the outer peripheral portion 76e toward the center portion 76f.

In more detail, the temperature distribution of the cathode intermediate member 76 will be described with reference to FIG.

In Fig. 12, the vertical axis represents temperature and the horizontal axis represents the position at which the temperature of the cathode intermediate member 76 is measured. That is, FIG. 12 shows the relationship between the position and the temperature in the cathode intermediate member 76, which is a graph showing the temperature change of the portion of the cathode intermediate member 76 at the temperature of measurement. Further, Fig. 12 shows a case where the heat input to the cathode intermediate member 76 is 3 [Kw], the case where the heat is 6 [Kw], and the flow rate of the hot water circulating in the water piping 92 is 10 [l/ In the case of min], the temperature distribution when the flow rate is 20 [l/min]. In Fig. 12, (A) shows the condition that the heat is 3 [Kw] and the flow rate is 20 [l/min], and (B) shows the condition that the heat is 3 [Kw] and the flow rate is 10 [l/min], (C) It represents a condition that the heat is 6 [Kw] and the flow rate is 20 [l/min], and (D) represents the condition that the heat is 6 [Kw] and the flow rate is 10 [l/min]. Further, the direction from the left end O toward the right end P in Fig. 12 coincides with the direction indicated by the arrow A in Fig. 8. That is, the region between the left end O and the right end P is (set to) the position below the height direction and the position close to the side plate portion 63 (the root portion 76c) and the upper portion in the height direction and the position opposite to the side plate portion 63 (the front end portion 76d) The area between the two is consistent. Further, the central position between the left end O and the right end P corresponds to the central position of the cathode intermediate member 76.

As shown in FIG. 12, it can be confirmed that the temperature of the central portion 76f of the cathode intermediate member 76 is lower than the temperature of the outer peripheral portion 76e, and the temperature gradually decreases from the outer peripheral portion 76e toward the central portion 76f. Therefore, the piping pattern of the water piping 92 is set so as to obtain the temperature distribution of the entire cathode intermediate member 76 as shown in FIG. Therefore, if the heat of the cathode intermediate member 76 is transmitted to the shower plate 75 via the heat exchange plate 91, or the shower plate 75 is cooled by the cathode intermediate member 76 via the heat exchange plate 91, the entire shower plate 75 is cooled. The temperature distribution can obtain a temperature distribution having the same shape as the distribution shape as shown in FIG. Thereby, the temperature distribution of the entire substrate W opposed to the shower plate 75 is similar to the temperature distribution having the same shape as the distribution shape shown in FIG.

Here, the temperature of the central portion 76f of the cathode intermediate member 76 is lower than the temperature of the outer peripheral portion 76e, whereby the temperature difference between the high temperature portion and the low temperature portion of the cathode intermediate member 76 can be reduced, and the cathode intermediate member 76 can be generated. Heat dispersion. Thereby, damage to the cathode intermediate member 76 due to thermal deformation can be prevented. When the temperature difference between the outer peripheral portion 76e of the cathode intermediate member 76 and the central portion 76f is set to about 20 to 50 ° C, damage of the substrate W due to thermal deformation can be prevented. Further, if the temperature of the substrate W as a whole is uniform, no thermal deformation occurs.

As shown in FIGS. 7 and 9, after the substrate W is heated to a desired temperature, a gas supply device (not shown) introduces the film forming gas into the heat exchange plate 91 of the cathode unit 68. The film forming gas flows through the first flow path 108 of the gas flow path 107, and is ejected to the first concave portion 103 of the first sheet piece 101 via the second flow path (see an arrow Y1 in Fig. 9). Thereafter, the space formed by the first concave portion 103 and the cathode intermediate member 76 is filled with the film forming gas, and then introduced into the second concave portion 104 of the second sheet 102 via the third flow path 110 (refer to FIG. 9 Arrow Y2). Thereafter, the film forming gas is ejected toward the substrate W through the small holes 74 of the shower plate 75.

Further, the startup matching box 72 applies a voltage supplied from the high-frequency power source to the shower plate 75 via the matching box 72 and the cathode intermediate member 76 to form a film on the surface of the substrate W. Here, the heater H of the anode 67 stops the heating operation when the temperature of the substrate W reaches a desired temperature. Plasma is generated in the film formation space 81 by applying a voltage to the shower plate 75. Therefore, when the substrate W is heated by the heat generated by the plasma as the processing time elapses, even if the heating of the anode 67 is stopped, the temperature of the substrate W rises to a temperature higher than the desired temperature.

However, since hot water is circulated in the cathode intermediate member 76, the substrate W can be cooled via the heat exchange plate 91 and the shower plate 75. In addition to this, the anode 67 can function as a heat sink for cooling the substrate W having an excessive temperature. Therefore, the temperature of the substrate W can be adjusted to a desired temperature regardless of the film formation process time.

Further, when a plurality of layers are formed in one film forming treatment step, a plurality of layers can be formed on the substrate W by switching the type of the film forming gas material supplied to the film forming space 81 at regular intervals.

Then, in the film formation process and after the film formation process, the gas or reaction product (powder) of the film formation space 81 is discharged through the exhaust port 80 formed in the peripheral portion of the cathode unit 68. Specifically, the gas or reaction product in the film formation space 81 is discharged to the exhaust pipe 79 at the peripheral portion of the cathode unit 68 via the gas flow path R and the exhaust port 80. Thereafter, the gas or reaction product passes through the closed portion of the lower portion of the cathode unit 68 toward the exhaust pipe 79 in the film forming chamber 11. Further, the gas or the reaction product is discharged from the exhaust pipe 29 provided at the lower portion of the side surface of the film forming chamber 11 to the outside of the film forming chamber 11.

Further, the reaction product (powder) generated when the film is formed on the substrate W is adhered to the inner wall surface of the exhaust pipe 79, and is recovered and treated.

The same processing as the above-described processing is performed for all the electrode units 31 in the film forming chamber 11, so that a film can be simultaneously formed on six substrates.

Then, after the film forming process is completed, the anode 67 is moved in the direction in which the two anodes 67 are separated from each other by the drive mechanism 71, and the processed substrate and the frame 51 (clamping piece 59A) are returned to the home position. Further, the substrate is separated from the anode 67 by moving the anode 67 in a direction in which the two anodes 67 are separated from each other.

Then, as shown in Fig. 1, the shutter 25 of the film forming chamber 11 is opened, and the carrier 21 is moved to the loading/unloading chamber 13 by a push-pull mechanism (not shown).

At this time, the inside of the loading/removing chamber 13 is decompressed, and the carrier 21 on which the substrate for processing to be formed next to be formed is mounted is placed in the loading/removing chamber 13.

Then, in the loading and unloading chamber 13, the heat accumulated in the substrate after the processing is transferred to the substrate before the processing, and the temperature of the substrate after the processing is lowered.

Then, after the carrier 21 on which the pre-processed substrate is mounted is moved into the film forming chamber 11, the carrier 21 on which the processed substrate is mounted is returned to the position of the moving rail 37 by the moving mechanism. After the shutter 25 is closed, the shutter 36 is opened, and the carrier 21 on which the processed substrate is mounted is moved to the substrate loading and unloading chamber 15.

In the substrate loading and unloading chamber 15, the substrate handling robot 17 removes the processed substrate from the carrier 21, and transports the processed substrate to the substrate housing cassette 19.

After the step of removing all the processed substrates from the carrier is completed, the substrate storage cassette 19 on which the processed substrate is mounted is moved to the place (device) where the next step is performed, and the film formation process of the film forming apparatus 10 is completed.

Therefore, according to the above embodiment, the hot water is circulated in the water pipe 92 embedded in the cathode intermediate member 76, and the temperature of the cathode intermediate member 76 can be kept constant. The heat of the cathode intermediate member 76 can be transferred to the shower plate 75 via the heat exchange plate 91, so that the temperature of the shower plate 75 can be kept constant. By keeping the temperature of the shower plate 75 fixed, the temperature rise of the substrate W can be suppressed. Therefore, even if the number of batch processes is increased, the quality of the film formed on the substrate W can be stabilized.

Further, a gas flow path 107 is provided in the heat exchange plate 91. Therefore, even when the space portion 77 formed between the cathode intermediate member 76 and the shower plate 75 is filled by the heat exchange plate 91, a plurality of small holes 74 provided in the shower plate 75 may be used. The film forming gas is surely supplied to the film formation surface of the substrate W. Thereby, a high quality film can be formed on the substrate W.

Further, embossing is applied to each of the surface 101a of the first sheet 101 and the surface 102a of the second sheet 102 constituting the heat exchange plate 91. By the embossing, a plurality of first recesses 103 are formed on the surface 101a of the first sheet 101, and a plurality of second recesses 104 are formed on the surface 102a of the second sheet 102. Therefore, the space in which the film forming gas flows can be surely ensured around the small holes 74 of the shower plate 75. Therefore, it is possible to prevent the small holes 74 of the shower plate 75 from being clogged, for example, due to a decrease in the processing accuracy when the heat exchange plate 91 is processed. Thereby, it is not necessary to improve the processing precision at the time of processing the heat exchange plate 91 more than necessary, and the processing cost can be suppressed (reduced).

Further, a pipe 111 is placed in the gas flow path 107 of the heat exchange plate 91, and the pipe 111 constitutes a gas flow path 107. Therefore, leakage of the film forming gas from the gas flow path 107 can be prevented. Thereby, the film forming gas introduced into the heat exchange plate 91 can be surely introduced into the small holes 74 of the shower plate 75, whereby the production efficiency can be improved.

Further, the water pipe 92 embedded in the cathode intermediate member 76 includes three water passages 92a to 92c. The temperature distribution of the cathode intermediate member 76 is set such that the temperature of the cathode intermediate member 76 gradually decreases from the outer peripheral portion 76e of the cathode intermediate member 76 toward the central portion 76f. As a result, the temperature of the central portion 76f of the substrate of the substrate W can be made lower than the temperature of the outer peripheral portion 76e (see Fig. 12). Thereby, damage of the substrate W due to thermal deformation can be prevented.

Further, in the heat exchange plate 91, a pair of first sheets 101 and second sheets 102 are superposed on each other in the direction in which the cathode unit 68 and the anode 67 face each other. Therefore, the first flow path 108, the second flow path 109, and the third flow path 110 are formed in the first plate piece 101 and the second plate piece 102, and the first plate piece 101 and the second plate piece 102 are superposed on each other. This can form the gas flow path 107. In particular, a groove 108a is formed in the first surface 101b of the first plate piece 101, and a groove 108b is formed in the second surface 102b of the second plate piece 102. Further, the first surface 101b is brought into contact with the second surface 102b so that the groove 108a is superposed on the groove 108a on the joint surface between the first sheet 101 and the second sheet 102. Further, as compared with the case where the gas flow path 107 is formed in one plate, the processing for forming the gas flow path 107 can be simplified, and the processing cost can be reduced.

Further, the gas flow path 107 includes three flow paths 108, 109, and 110. The film formation gas is discharged to the first concave portion 103 of the first sheet piece 101 through the first flow path 108 and the second flow path 109 of the gas flow path 107. Thereafter, the film forming gas is introduced into the small holes 74 of the shower plate 75 via the third flow path 110. Therefore, the film forming gas introduced into the heat exchange plate 91 can be dispersed to the entire space portion 77 located in the vicinity of the cathode intermediate member 76, and then the film forming gas can be led to the plurality of small holes 74 of the shower plate 75. Therefore, the film forming gas can be uniformly ejected from the entire shower plate 75, so that the film can be uniformly formed over the entire substrate W.

In addition, the technical scope of the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention.

For example, in the above-described embodiment, the case where the pipe 111 is placed on the gas flow path 107 of the heat exchange plate 91 and the pipe 111 constitutes the gas flow path 107 has been described. However, the present invention is not limited to this configuration, and the pipe 111 may be laid in such a manner that the surface of the gas flow path 107 is exposed to the film forming gas without the pipe 111 being laid in the gas flow path 107 of the heat exchange plate 91. The gas flow path 107 flows. In this case, it is preferable to provide a sealing member such as a gasket on the joint surface between the first sheet 101 and the second sheet 102.

Moreover, in the above embodiment, the structure in which the water piping 92 embedded in the cathode intermediate member 76 includes the three water passages 92a, 92b, and 92c has been described. However, the present invention is not limited to this configuration, and the water piping is laid so as to obtain a temperature distribution of the cathode intermediate member 76 whose temperature gradually decreases from the outer peripheral portion 76e toward the central portion 76f. 92 can.

Furthermore, in the above-described embodiment, the case where the hot water (temperature adjustment fluid) is circulated in the water pipe 92 (the temperature adjustment fluid flow path) has been described. However, the present invention is not limited to the structure for circulating hot water, and cold water (for example, water of about 25 ° C) or oil may be used instead of hot water as a cooling medium.

Further, in the above embodiment, for example, the temperature of the heater H is set to about 200 ° C, the temperature of the hot water circulating in the water pipe 92 is set to about 70 ° C to 80 ° C, and the temperature of the substrate W is set to About 170 ° C or so. However, the present invention is not limited to the temperature conditions, and the respective temperatures may be set depending on the type of the film formed on the substrate W, the heating ability of the heater H, and the like.

Moreover, in the above-described embodiment, the gas flow path 107 formed in the heat exchange plate 91 includes three flow paths 108, 109, and 110, and a film forming gas is uniformly discharged from the entire shower plate 75. However, the present invention is not limited to this configuration, and a gas flow path capable of ejecting a film forming gas from the entire shower plate 75 may be formed.

The present invention is applicable to a film forming apparatus used in the manufacture of thin film solar cells.

10. . . Film forming device

11. . . Film forming chamber

13. . . Loading ‧ removal room

14. . . Substrate film forming module

15. . . Substrate loading and unloading room

16. . . Substrate film forming production line

17. . . Substrate handling robot

18. . . track

19. . . Substrate storage匣

twenty one. . . Carrier

twenty two. . . Upper

twenty three. . . First side

twenty four. . . Carrier moving out

25, 36. . . Stop

26, 56. . . Opening

27. . . Second side

28. . . Hot water piping

29, 79. . . exhaust pipe

30. . . Vacuum pump

31. . . Electrode unit

32. . . Hot water circulator

37. . . Moving track

45. . . Drive arm

51. . . frame

52. . . Connecting member

53, 61. . . wheel

54. . . Frame holder

57. . . Peripheral part

59. . . Grip

59A, 59B. . . Holding piece

62. . . Bottom plate

63. . . Side plate

64. . . Connection

65. . . First board

67. . . anode

67A. . . surface

68. . . Cathode unit

69. . . Second board

71. . . Drive mechanism

72. . . Matching box

73. . . Flange

74. . . Small hole

75. . . Shower plate

76. . . Cathode intermediate member (electrode plate)

76a. . . First intermediate member piece

76b. . . Second intermediate member piece

76c. . . Root

76d. . . Front end

76e. . . Peripheral part

76f. . . Central department

77. . . Space department

78. . . Mask

80. . . exhaust vent

81. . . Film forming space

82. . . Stray capacitor

89. . . Insulating member

91. . . Heat exchange board

92. . . Water piping (flow path for temperature adjustment fluid)

92a. . . Upper waterway

92b. . . Middle waterway

92c. . . Lower waterway

93, 97. . . bolt

94, 99. . . Internal thread

95, 98. . . Bolt hole

95a, 98a. . . Pupil

101. . . First plate

102. . . Second plate

101a, 102a. . . Surface (first contact surface, second contact surface)

101b. . . First side

102b. . . Second side

103. . . First recess

104. . . Second recess

106, 105. . . Partition wall

107. . . Gas flow path

108. . . First flow path

108a, 108b. . . groove

109. . . Second flow path

110. . . Third flow path

111. . . Piping

200~225. . . symbol

H. . . Heater

R. . . Gas flow path

W. . . Substrate

Y1, Y2. . . arrow

Fig. 1 is a view schematically showing the configuration of a film forming apparatus according to an embodiment of the present invention.

Fig. 2 is a perspective view schematically showing a configuration of a film forming chamber according to an embodiment of the present invention.

Fig. 3 is a perspective view showing a configuration of a film forming chamber according to an embodiment of the present invention, and is a perspective view different from Fig. 2 .

Fig. 4 is a side view showing a film forming chamber in accordance with an embodiment of the present invention.

Fig. 5 is a perspective view schematically showing the configuration of an electrode unit according to an embodiment of the present invention.

Fig. 6 is a perspective view showing a configuration of an electrode unit according to an embodiment of the present invention, and is a perspective view different from Fig. 5.

Fig. 7 is a partial cross-sectional view showing a cathode unit and an anode according to an embodiment of the present invention.

Fig. 8 is a perspective view showing a cathode intermediate member according to an embodiment of the present invention.

Fig. 9 is an enlarged cross-sectional view showing a portion indicated by a symbol A in Fig. 7.

Fig. 10 is a plan view showing a heat exchange plate according to an embodiment of the present invention.

Fig. 11 is a perspective view showing a carrier according to an embodiment of the present invention.

Fig. 12 is a view showing changes in temperature of a measurement site of a cathode intermediate member according to an embodiment of the present invention.

twenty one. . . Carrier

31. . . Electrode unit

67. . . anode

67A. . . surface

68. . . Cathode unit

73. . . Flange

75. . . Shower plate

76. . . Cathode intermediate member

76a. . . First intermediate member piece

76b. . . Second intermediate member piece

77. . . Space department

78. . . Mask

79. . . exhaust pipe

80. . . exhaust vent

81. . . Film forming space

82. . . Stray capacitor

91. . . Heat exchange board

92. . . Water piping

93, 97. . . bolt

94. . . Internal thread

95, 98. . . Bolt hole

95a, 98a. . . Pupil

H. . . Heater

R. . . Gas flow path

W. . . Substrate

Claims (4)

A film forming apparatus, comprising: a cathode unit comprising: an electrode plate to which a voltage is applied; a temperature regulating fluid flow path disposed on the electrode plate and circulating a temperature adjusting fluid; and a shower plate contacting The electrode plate has a plurality of holes for supplying a process gas to a film formation surface of the substrate; the heat exchange plate is disposed between the electrode plate and the shower plate, and is in contact with the electrode plate and the cluster And a gas flow path provided in the heat exchange plate, introducing the process gas into the heat exchange plate, and guiding the process gas introduced into the heat exchange plate to the plurality of the shower plates a hole; and an anode disposed opposite to the cathode unit; wherein the temperature adjustment fluid flow path is disposed in a direction from a peripheral portion of the electrode plate toward a center portion of the electrode plate, the electrode The temperature of the board gradually becomes lower. The film forming apparatus according to claim 1, wherein the heat exchange plate includes a first contact surface and a second contact surface, wherein the first contact surface has a first concave portion formed by the uneven processing and is in contact with the electrode plate. The second contact surface has a second concave portion formed by the uneven processing and is in contact with the shower plate, and positions of the first concave portion and the second concave portion correspond to positions of the plurality of holes of the shower plate. The film forming apparatus of claim 1 or 2, wherein the heat exchange plate comprises a pair of first plates and second plates, and The first plate piece and the second plate piece are stacked along a direction in which the cathode unit faces the anode. The film forming apparatus according to claim 1 or 2, wherein in the gas flow path, the process gas system introduced into the heat exchange plate flows toward a position close to the electrode plate, and flows toward a position close to the electrode plate. The process gas system flows from the electrode plate toward the shower plate.