JP2022512764A - Radiation devices, depositors for depositing material on the substrate, and methods for depositing material on the substrate. - Google Patents

Abstract

A radiating device (200) is provided that includes a hollow body and a cooling device (246) disposed within the hollow body (250). [Selection diagram] FIG. 4A

Description

[0001] An embodiment of the present invention relates to a thin film processing apparatus, particularly to a deposition system, and more specifically to a roll-to-roll (R2R) deposition system. Embodiments of the invention specifically relate to radiating devices, devices and methods for depositing materials on substrates.

[0002] The processing of flexible substrates such as plastic films and foils is in high demand in the packaging industry, semiconductor industry, and other industries. The treatment consists of coating a flexible substrate with materials such as metals (especially aluminum), semiconductor materials, and dielectric materials, as well as other treatments performed on the substrate for each application. obtain. A system performing this task typically includes a processing drum (eg, a cylindrical roller) connected to the processing system to transport the substrate. At least a portion of the substrate is processed on this processing drum. This allows the roll-to-roll coating system to provide a high throughput system.

[0003] Typically, a vapor deposition process, such as a thermal vapor deposition process, can be utilized to deposit a thin layer of metallizable metal on a flexible substrate. However, roll-to-roll deposition systems are also in significant demand in the display and photovoltaic (PV) industries. For example, touch panel elements, flexible displays, and flexible PV modules are showing increasing demand for depositing suitable layers in roll-to-roll coaters. However, such devices typically have several layers manufactured, for example, in a CVD process, especially also in a PECVD process.

[0004] For optimal deposition of material on the substrate, the process parameters of the different thermal deposition processes need to be adjusted appropriately according to the situation. In particular, the thermal control of the process plays a role in achieving high quality deposition of materials. Not only does it need to improve the overall thermal control of the process, but it also needs to improve the thermal regulation of some of the components that affect the process.

[0005] In light of the above, radiation devices, depositors and methods for depositing materials on substrates are provided. Further aspects, advantages, and features of the present disclosure are evident in the dependent claims, description of the specification, and accompanying drawings.

[0006] According to one aspect, a radiating device is provided. Radiating devices include hollow bodies and cooling devices located within the hollow bodies.

[0007] According to a further aspect, a depositing device for depositing material on a substrate is provided. The deposition apparatus includes a decompression chamber according to the embodiments described herein, one or more deposition units, and a radiating device.

[0008] Further according to a further aspect, there is provided a method for depositing a material on a substrate using a depositor. The method comprises cooling a radiating device with a hollow body using a cooling device disposed in the hollow body.

[0009] Embodiments also cover devices for performing the disclosed methods, including device portions for performing the embodiments of each described method. Aspects of these methods may be implemented by any combination of the two, or in any other manner, using hardware components and a computer programmed with the appropriate software. Further, embodiments according to the present disclosure also cover methods for operating the described apparatus. This includes method embodiments for performing all functions of the device.

[0010] By reference to embodiments, a more detailed description of the invention, briefly outlined above, can be obtained so that the above features of the invention can be understood in detail. The accompanying drawings relate to embodiments of the invention and are described below.

FIG. 3 shows a schematic top view of a roll-to-roll depositor for depositing or coating thin films according to the embodiments described herein. FIG. 3 shows a cross-sectional view of a deposition unit according to the embodiments described herein. The top view of the deposition unit according to the embodiment described herein is shown. A side view of a radiating device according to an embodiment described herein is shown. FIG. 3 shows a cross-sectional view of a radiating device according to an embodiment described herein. A side view of a radiating device according to an embodiment described herein is shown. A flow chart of the method according to the embodiments described herein is shown.

[0011] From this, various embodiments of the present invention are referred to in detail, and one or more embodiments thereof are illustrated. In the following description of the drawings, the same reference numbers refer to the same components. In general, only differences for individual embodiments are described. Each embodiment is provided for the purpose of explaining the present invention and is not limited to the present invention. Further, the features exemplified or described as part of one embodiment may be used in other embodiments or may be used in combination in other embodiments. Thereby, further embodiments are created. The present description is intended to include such modifications and modifications.

[0012] The embodiments described herein relate to radiating devices, in particular to radiating devices including cooling devices disposed within the radiating device. Radiation devices include hollow bodies. The cooling device can be placed specifically in the hollow body. The radiating device can be configured as a plasma source in the deposition process. In particular, the radiating device can be configured as a plasma source for a plasma chemical vapor deposition (PECVD) process.

[0013] FIG. 1 shows a schematic diagram of a depositor according to an embodiment described herein. The depositor may include a decompression chamber 102 and a transfer device 140 for transporting the substrate. The depositor may include one or more deposit units 110. The deposition unit can be configured to deposit material on the substrate. The depositor further includes a radiating device 200. One or more deposition units may be arranged such that the substrate is transported between the transfer device 140 and one or more deposition units 110.

[0014] According to the embodiments described herein, the transport device may transport the substrate along one or more deposition units. Radiation devices may be included within each of one or more deposition units. The radiating device can be configured to allow deposition of material on the substrate. Radiation devices can include cooling devices as further described below. The depositor may include one or more supply channels. One or more supply channels may be configured to provide the material to one or more deposition units.

[0015] According to a further embodiment, the device may include a gas cooling device. The gas cooling device can be configured to cool the gas. The gas cooling device may be configured to provide the cooled gas to the radiating device.

[0016] According to the embodiments described herein, a depositing device for depositing a material on a substrate, eg, for depositing a thin film on a substrate, is provided. The substrate may be a flexible substrate. As shown exemplary in FIG. 1, the depositor 100 may include a decompression chamber 102. The decompression chamber may have a first chamber portion 102A and a second chamber portion 102B. The third chamber portion (not shown) may be configured as a take-up / delivery chamber and may be separated from the rest of the chamber to replace the flexible substrate. Thereby, the remaining chamber portion 102A / B does not need to be ventilated to remove the treated flexible substrate and does not need to be exhausted after the new substrate is inserted. For example, the downtime of the device (downtime) can be reduced.

[0017] The depositor may include at least one deposit unit, and in particular the depositor may include three or more deposit units.

It should be noted that the flexible substrate or web used in the embodiments described herein may be characterized by being bendable. The term "web" may be used synonymously with the term "strip" or "flexible substrate". For example, the web as described in embodiments herein can be a foil or another flexible substrate. However, as detailed below, the advantages of the embodiments described herein may also be provided for carriers of non-flexible substrates, or other in-line deposition systems. However, it is understood that certain advantages can be utilized in flexible substrates and applications for manufacturing devices on flexible substrates.

[0019] According to an embodiment, as shown in FIG. 1, a transport device 140 with a rotating shaft 111, such as a coated drum 142, may be provided within the device. The coated drum 142 may have a curved outer surface for guiding and / or transporting the substrate along the curved outer surface. The substrate can be guided, for example, through a first decompression treatment region of the top deposit unit 110 of FIG. 1 and at least one second decompression treatment region of the second top deposit unit 110 of FIG.

[0020] The embodiment depicted in FIG. 1 includes five sedimentary units 110, such as five sedimentary sources. The deposition unit may be provided in the processing area and the substrate carried by the coated drum may be processed in each area. Further, according to further embodiments that can be combined with other embodiments described herein, more than one deposition unit, eg, a deposition station, may be provided. For example, four, five, six, or even more deposition units, such as sedimentation stations, may be provided. The treatment area may be separated from the adjacent treatment area or further area by a gas separation unit.

[0021] According to the embodiments described herein, a first portion of the coated drum, i.e., an area of cross section of the coated drum perpendicular to the axis of rotation, may be provided within the second chamber portion 102B. , The rest of the coated drum, i.e., an area of the cross section of the coated drum perpendicular to the axis of rotation, may be provided within the first chamber portion 102A.

[0022] According to the embodiments described herein, the first chamber portion 102A may have a convex wall portion. A convex surface is understood to either have a curved surface of a wall portion or have a plurality of planes adjacent to each other in order to provide a convex shape of a plurality of surfaces. According to a usual embodiment, the plurality of planes that integrally form the convex shape have the advantage of being easier to manufacture because the vacuum flange coupling described below can be provided to the plane.

[0023] Illustratively in connection with two of the five deposition units shown in FIG. 1, the first deposition unit 110 may correspond to a first treatment area and a second deposition. The unit 110 may correspond to the second decompression processing region. According to the embodiments described herein, at least two deposition units may be provided. At least two deposition units may include a flange portion to provide a decompression connection to the first chamber portion 102A. The first chamber portion may have a convex wall portion as described above and at least two openings essentially parallel to it, eg, at least two openings are convex wall portions. It may be provided inward or within a protrusion extending from the convex wall portion, i.e., an extension of the convex wall portion that extends essentially radially outward with respect to the axis of the coated drum.

[0024] According to embodiments, at least two deposition units may be configured to be received by at least two openings in the first chamber portion. The flange portion may provide a reduced pressure airtight connection with a convex wall portion of the first chamber portion or a protrusion extending from the convex wall portion. However, it should be understood that the flange portions may be provided for the other deposition units shown in FIG.

[0025] Therefore, the deposition unit can be inserted from the outside of the convex wall portion of the first chamber portion 102A. At the time of insertion, the pressure reducing flange may be connected. The decompression region may be provided within the first chamber portion. According to embodiments, the deposition unit can be inserted into the opening essentially along the axis of the transport device 140, eg, the coated drum 142.

[0026] As mentioned above, a portion of the deposition unit 110 may be provided under reduced pressure, i.e., within the first chamber portion and / or inside the flange. Another portion of the deposition unit may be provided outside the area where decompression is provided within the decompression chamber 102. The deposition unit is easily replaceable and can easily supply consumable media such as cooling fluids, gas, power and the like. For example, the connection of the deposition unit to additional elements such as power supplies, gas supplies, pump devices, etc. may be provided outside the first chamber portion 102A. The connection of the sedimentary unit to additional elements may form the other parts mentioned above outside the region.

[0027] As mentioned above, FIG. 1 shows the depositor 100. The depositor 100 may include a decompression chamber 102. The decompression chamber 102 is provided so that decompression can be generated within the chamber. Various decompression treatment techniques, in particular decompression deposition techniques, can be used to process the substrate or to deposit a thin film on the substrate. As shown in FIG. 1 and as referred to herein, the depositor 100 may be a roll-to-roll depositor and supports the flexible substrate 106 being guided and processed. The flexible substrate 106 can be guided from the second chamber portion 102B to the first chamber portion 102A with an internal deposition unit, as indicated by arrow 8 in FIG.

[0028] As mentioned above, according to embodiments, the decompression chamber 102 may further include a third decompression chamber portion that may be configured as a take-up / delivery chamber. The third decompression chamber may include one rolled to provide the substrate, eg rolls. The flexible substrate may be directed to the transport device 140, eg, a coated drum 142 configured to guide and / or transport the substrate during processing and / or deposition by rollers. The substrate can be transported in the transport direction indicated by arrow 8. It should be understood that the substrate can also be transported in the direction opposite to the direction indicated by arrow 8. From the coated drum 142, the substrate 106 can be guided back to the second chamber portion 102B and the third chamber portion, respectively.

[0029] According to the embodiments described herein, the third chamber portion may include a feeder for supplying the substrate. The substrate can then be guided via the rollers towards the transport device 140, eg, the coated drum 142. The substrate can be guided through the curved surface of the coated drum 142. The coated drum may transport the substrate along the processing area to allow the deposition of particles on the substrate. The substrate can be transported between the curved surface of the coated drum and each deposition unit. For example, the substrate can be guided through a slit between the coated drum and the deposition unit. In order for the winder to receive the processed substrate, the coated drum 142 may transport the substrate back through the rollers to the third decompression chamber portion. The winder and feeder may be rolls. The winder and / or dispenser may be detachably located within the third chamber portion.

[0030] According to further embodiments for operating and using the deposition apparatus described herein, a layer deposit or laminate for an ultra-high barrier laminate or a flexible TFT device may be provided. .. Ultra-high barrier laminates or flexible TFT devices consist of a series of layers deposited, for example, by PECVD or PVD processes or a combination thereof. Due to the high demand for membranes of different qualities, it is common practice to deposit a single membrane in a system specially designed for each single membrane. It is an improvement to combine the deposition of at least several sets of membranes or combinations of membranes in a single coating machine in order to reduce costs and make their applications commercializable. The embodiments described herein provide a module concept that allows the combination of several process modules. In light of the above, according to some embodiments described herein, there is a need for protection from OLED displays and / or lighting, flexible solar, or adjacent environments. Flexible ultra-high barriers for other electronic devices may be provided. For example, this may include etching termination in flexible TFTs, deposition of gate dielectrics, channels, source gates, and drain electrodes.

[0031] As further shown in FIG. 1, the second chamber portion 102B may be tilted with respect to the vertical or horizontal direction of the third chamber portion (not shown). The angle of inclination may be 20 to 70 degrees with respect to the vertical. The tilt may allow the coated drum to be displaced downward as compared to the horizontal arrangement of similar components without tilt. The inclination of the second chamber portion 102B is such that, for example, the axis of symmetry of the deposition unit (see line 1 shown in FIG. 1) is at the same height, above, or below the axis of the coated drum 142. As such, it makes it possible to provide additional deposition units. As shown in FIG. 1, the five deposition units may be provided above the axis of rotation of the coated drum, at the height of the axis of rotation of the coated drum, and below the axis of rotation of the coated drum. It is possible to reduce or eliminate the peeling of the generated particles onto the substrate.

[0032] According to the embodiments described herein, the deposition unit may include a sedimentation compartment. Sedimentation compartments may include one or more marginal areas. One or more marginal areas can be considered as a sedimentary compartment, i.e., a limitation on the upper side of the sedimentary chamber. One or more edge regions may form a frame surrounding the deposition chamber. For example, one or more edge regions may be located on the short sides of the sedimentary compartment.

[0033] According to the embodiments described herein, one or more edge regions may be defined by the dimensions of the sedimentary compartment. Given the two-dimensional shape, the sedimentary compartment can have a substantially rectangular shape. The sedimentary compartment may have two parallel long sides and two parallel short sides. Therefore, the long side can be longer than the short side. Two or more edge regions may be located on the long and / or short sides of the sedimentary compartment.

[0034] As shown exemplary in FIG. 3, the sedimentary compartment may include one or more supply channels 130, and an optional radiating device 200. The sedimentary compartment may include at least two edge regions 124, and in particular, the sedimentary compartment may include four marginal regions 124.

[0035] According to the embodiments described herein, the deposition apparatus may include a heating unit 300. The heating unit 300 may be located in a sedimentary compartment, eg, two or more edge regions 124 shown in FIG. The heating unit may be provided in at least one of two or more edge regions of the sedimentary compartment. More specifically, heating units may be provided in two of the two or more edge regions. The heating unit may be provided on the short side of the sedimentary compartment. For example, the heating unit may be attached to more than one edge region.

[0036] According to the embodiments described herein, the heating unit may include one or more heating devices 325. One or more heating devices 325 may be arranged with two or more edge regions. In particular, each of the two or more edge regions may include one of one or more heating devices 325. More specifically, two or more edge regions on the short sides of the sedimentary compartment may each include one heating device. Further or alternatively, two or more heating devices may be arranged in two or more edge regions. One or more heating devices may be selected from the group consisting of ceramic inlays, radiant heaters, resistance heaters, or combinations thereof.

[0037] According to the embodiments described herein, the heating unit may be configured to locally heat the substrate 106. For example, a heating unit, i.e., one or more heating devices, may be configured to heat only a portion of the substrate. This portion may be arranged with two or more edge regions.

[0038] The substrate can be considered to contain several substrate segments. In particular, the substrate 106 may include three substrate segments. The substrate may include a first substrate segment, a second substrate segment, and / or a third substrate segment. The present embodiment can provide the possibility of heating only a specific segment of the substrate.

[0039] According to the embodiments described herein, the heating unit may be provided on the transfer device 140. For example, the heating unit may be located within the coated drum 142. The heating device may be arranged such that the first substrate segment and / or the second substrate segment receive heat exclusively from the heating unit, i.e., one or more heating devices. For example, one or more heating devices may be located in the segment of the coated drum corresponding to the first substrate segment and / or the second substrate segment.

[0040] FIG. 2 shows a cross-sectional view of the deposition unit according to the embodiments described herein, and FIG. 3 shows a top view of the deposition unit according to the embodiments described herein. The deposition unit 110 may include a housing 112. The deposition unit 110 may include an internal shield, such as a pump shield. The internal shield can limit the deposition chamber within the housing and line the housing. The deposition unit may further include a deposition opening 126. The deposit opening 126 may extend, for example, between internal shields. In other words, the deposit opening may have the same dimensions as the deposit chamber. According to embodiments, the deposit opening 126 may be smaller than the dimensions of the deposit chamber.

[0041] According to the embodiments described herein, the deposition unit may include a temperature controller 118. The temperature controller 118 may be configured to cool the deposition unit, i.e., the housing 112 of the deposition unit. The temperature controller may be further configured to cool the internal shield. For example, a cooling channel may be included within the housing 112. The cooling fluid may be transported through the cooling channel to allow heat transfer between the deposition chamber and the cooling fluid.

[0042] The deposition unit may further include one or more supply channels 130. One or more supply channels may include one or more gas supply lines. In particular, the deposition unit may include two supply channels 130. The deposition unit further includes a radiating device 200.

[0043] According to the embodiments described herein, one or more supply channels 130 may be located within the upper section of the deposition unit. One or more supply channels may be fluid communication with a supply configuration, eg, a gas tank. For example, when two gas supply lines are provided, one gas supply line may be in fluid communication with one supply configuration and the second gas supply line may be in fluid communication with the second supply configuration. good. As shown in FIG. 2, one or more supply channels can be located in the same horizontal plane of the deposition unit.

[0044] One or more supply channels 130 may extend in a direction perpendicular to the paper in FIG. Along one or more supply channels 130, a plurality of openings may be arranged to allow the material to enter the deposition unit, i.e., the deposition chamber. The openings can supply, for example, gas to the deposition chamber. The opening may be provided as a nozzle.

[0045] According to the embodiments described herein, the deposition unit may include a radiating device 200. The radiating device may be located in a central location, eg, in the lower section of the deposition unit 110. For example, the radiating device may be located between the two supply channels. The radiating device may be placed in a plane separate from the plane of the supply channel. For example, the plane of the radiating device may be below the plane of the supply channel in the vertical direction. Further or alternative, the radiant device may be arranged such that radiant energy can be provided in the direction of one or more supply channels.

[0046] According to the embodiments described herein, the transport device 140 may be located above the upper section of the deposition unit. It should be understood that the terms "top" and "bottom" relate to the orientation of the sedimentary unit as exemplified in FIG. The deposition unit can be placed at various angles of the transport device, as shown in connection with FIG. The transport device 140 may provide a substrate for the deposit opening 126. For example, the movement of the transport device may provide a substrate along the deposition opening. The movement of the transfer device may provide the substrate at a constant rate, or the movement of the transfer device may be started and stopped only a few times. The transport device may be a coated drum 142.

[0047] According to the embodiments described herein, the deposition unit may include a gas separation unit 122. The gas separation unit may be configured to separate the first decompression treatment region and at least one second decompression treatment region. The gas separation unit may be configured to form a slit through which the substrate can pass between the outer surface of the transport device and the gas separation unit. The gas separation unit may be adapted to control fluid communication between the first processing region and the second processing region. Fluid communication can be controlled by adjusting the position of the gas separation unit, eg, the radial position.

[0048] According to various embodiments that may be combined with other embodiments described herein, the actuator of the gas separation unit 122 for providing a radial position may be an electric motor, a gas pressure cylinder, or the like. It can be selected from the group consisting of gas pressure actuators, linear drivers, and hydraulic actuators such as hydraulic cylinders.

[0049] According to the embodiments described herein, the deposition openings may allow the material to reach the substrate. In other words, the deposit opening may allow the material to be deposited on the substrate transported by the transport device.

[0050] According to the embodiments described herein, the deposition unit may be a reaction chamber. Decompression can be applied to the deposition unit. The reaction chamber may enable a PECVD process, a CVD process, a PCD process, a sputtering process, or a combination thereof. For example, a chemical reaction can occur within the deposition unit or deposition chamber. The supply channel can guide the gas, especially the reactive gas, into the deposition chamber. For example, two different types of gas may be provided. A chemical reaction can occur, resulting in the deposition of particles on the substrate. The particles may be solid particles. For example, support gas and feedback gas may be provided.

[0051] According to embodiments that can be combined with any other embodiment described herein, the radiating device may provide radiation energy. Radiation devices can provide radiation energy to generate plasma. The plasma may be generated around the radiating device. For example, the radiating device may be provided to ignite the plasma.

[0052] Side views and cross-sectional views of the radiating device according to embodiments are described herein with reference to FIGS. 4A and 4B as examples. The radiating device 200 may have an axis of symmetry 2. The radiating device 200 may include a hollow body 250. The hollow body 250 may extend along the axis 2 along the length of the radiating device. The radiating device can have a cylindrical shape. The length of the radiating device along axis 2 can be adapted to the dimensions of the deposition unit. The radiating device may be connected to a power source, for example a hollow body may be connected to the power source. The radiating device may include a coaxial connector.

[0053] According to the embodiments described herein, the radiating device may have a cylindrical shape. The radiating device can extend in the length direction. For example, the length direction may be parallel to the long side of the sedimentary compartment. The radiating device can have a diameter of 6 cm, especially 3 cm. The radiating device can have a length of 3 m, especially 2 m. The radiating device can have a diameter to length ratio of 1:66.

[0054] The radiating device may include an outer tube 255. The outer tube may surround the hollow body 250. The outer tube may extend along axis 2 of the radiating device. The length of the outer tube along the axis 2 may be similar to the length of the hollow body. The outer tube 255 can be configured as a vacuum separation. The outer tube 255 may be a quartz tube. Quartz is useful for allowing radiated or microwaves to pass through the outer tube without or with very little absorbed microwaves.

The radiating device may include a cooling device 246. The cooling device 246 may be disposed within the hollow body 250. The cooling device may extend lengthwise along axis 2 of the radiating device. The cooling device may line the inner area of the hollow body 250. The cooling device may be configured to cool the hollow body. Cooling the hollow body may include heat transfer between the hollow body and the cooling device.

[0056] The hollow body 250 may include a conductor. The conductor may be supplied with energy at the first energy port and / or the second energy port. Conductors can be made from copper (Cu) or from any other metal suitable for use that provides radiant energy. The power supply can provide energy to the conductor. High frequency radiated waves may be transmitted through the conductor. For example, microwaves are generated and transmitted through conductors. Radiated waves are provided to generate plasma around the radiating device.

[0057] According to the embodiments described herein, the radiating device may be connected to one or more magnetron sources. For example, one or more magnetron sources may be located in the first energy port and / or the second energy port. One or more magnetron sources may be configured to provide electromagnetic energy, i.e., electromagnetic waves to the conductor. One or more magnetron sources may include a high power decompression tube for generating microwaves using the interaction of electron flow and magnetic field as it travels through a series of open metal cavities. .. The electrons pass through the openings and reach these cavities, causing the radio waves to vibrate internally. Microwaves may be generated from DC electricity supplied to the decompression tube by, for example, a power source.

[0058] For example, gas may be supplied by the supply channel described in connection with FIG. The particles provided by the gas can generate plasma around the radiating device. In particular, the support gas can generate plasma around the radiating device.

[0059] According to the embodiments described herein, the radiating device may be a microwave antenna. High frequencies in the range of 915 Mhz to 5.8 Ghz may be applied to the microwave antenna, in particular high frequencies of 2.45 Ghz may be applied to the microwave antenna. The microwave antenna may be configured to generate a plasma built along the length of the radiating device. The plasma can surround the radiating device. Therefore, high plasma density can be achieved. The microwave antenna can extend through the dimensions of the deposition chamber. Therefore, the plasma can be provided along the direction perpendicular to the substrate transport direction.

[0060] According to the embodiments described herein, the cooling device 246 may include one or more cooling channels for guiding the cooling fluid through it. The cooling channel may include an inlet fluid port 242 and an outlet fluid port 244. The inlet fluid port 242 may be located in one end region of the radiating device and the outlet fluid port 244 may be located in the second end region of the radiating device. The cooling fluid can enter the cooling device through the inlet fluid port. The cooling fluid can exit the cooling device through the outlet fluid port. The cooling fluid may allow heat exchange between the radiating device and the cooling fluid. By flowing through the cooling channel, the cooling fluid can transfer the heat generated by the radiant device away from the radiant device.

[0061] According to the embodiments described herein, the cooling fluid may be a liquid containing, in particular, glycol, more specifically a mixture of water and glycol. The cooling fluid should have a temperature in the range of -30 degrees Celsius to 0 degrees Celsius, especially in the range of -25 degrees Celsius to -5 degrees Celsius, more specifically in the range of -20 degrees Celsius to -10 degrees Celsius. May have. The cooling fluid may be provided at a pressure between 4 and 8 bar, particularly between 5 and 7 bar, more specifically at a pressure of 6 bar. The pressure of the cooling fluid can be selected depending on the deposition process.

[0062] For example, energy may be provided to the conductor during operation. The energy provided heats the conductor, which raises the temperature of the radiating device. This can increase the temperature in the deposition unit, i.e., the deposition chamber. Such an increase in temperature can interfere with the deposition process and also damage the components involved in the deposition process, such as conductors.

[0063] In general, radiant devices, or microwave antennas, generate heat by providing radiant energy to the deposition process. Advantageously, the cooling device may provide cooling for the microwave antenna. Therefore, the temperature inside the deposition chamber can be adjusted. In addition, the cooling device counteracts the heat generated by the microwave antenna. Damage and / or modification of the substrate can be avoided. For example, bending of the substrate can be avoided and / or prevented. This allows for a more uniform deposition of particles on the substrate. In addition, degradation of the reactive species can be prevented and / or avoided. In addition, cooling the radiating device can enhance the uniformity of the plasma produced by the radiating device. Even more advantageous, the radiating device and / or conductor can be protected from damage due to overheating.

[0064] FIG. 4B shows a cross-sectional view of the radiating device according to the embodiments described herein. FIG. 4B is an exemplary cross-sectional view of the radiating device shown in FIG. 4A. A cooling device 246 may be arranged around the shaft 2. A hollow body 250 may be placed around the cooling device. The outer tube 255 may be placed around the hollow body. An internal space may be provided between the outer tube 255 and the hollow body 250.

[0065] For example, an internal space 252 may be provided between the outer tube and the hollow body. A conductor may be placed between the cooling device and the outer tube. An internal space 252 may be provided between the conductor and the outer tube.

[0066] According to the embodiments described herein in connection with FIG. 5, the radiating device 400 may include a quartz tube surrounding the hollow body 250. The radiating device has an interior space defined between the hollow body and the quartz tube, an inlet opening 247 configured to allow the gas to enter the interior space, and the gas exiting the interior space. It may include an outlet opening 249 configured to allow it.

[0067] A gas cooling device may be configured to cool the gas. The gas cooling device may be configured to provide the cooled gas to the interior space 252. The interior space may include one or more gas cooling devices. The inlet opening 247 and the outlet opening 249 may be connected by a gas cooling device 248. The gas cooling device may include one or more gas cooling channels. One or more gas cooling channels may include channels provided by the interior space 252.

[0068] Gas may be provided to the gas cooling device. For example, the gas cooling device may be provided with an inert gas. The gas may be selected from one or more components from the group consisting of an inert gas, in particular nitrogen and / or dry air. The choice of inert gas depends on the radiant energy, i.e., the permeability of the gas to high frequency radiated waves. It is useful when the inert gas causes no or little absorption of radiated waves. The gas is provided through the inlet opening of the gas cooling device and can enter the gas cooling device. Gas can exit the gas cooling device through the outlet opening. The gas can be guided through a gas cooling device and / or a gas cooling channel.

[0069] According to embodiments, the gas may be provided at room temperature. For example, the gas may be provided at a temperature of 20 degrees Celsius ± 5 degrees Celsius. Gases are treated in the range between -30 degrees Celsius and 30 degrees Celsius, especially between 0 degrees Celsius and 25 degrees Celsius, more specifically between 10 degrees Celsius and 20 degrees Celsius. May be provided at temperature. The gas can be cooled to the processing temperature before being served through the inlet opening.

[0070] According to embodiments that may be combined with any other embodiment described herein, the gas cooling device may be configured to cool the radiant device. In particular, the gas cooling device may be configured to cool the outer tube surrounding the hollow body. The gas can flow through the gas cooling device to allow heat transfer between the quartz tube and the gas and / or between the hollow body and the gas.

Advantageously, the gas cooling device contributes to the reduction of the temperature in the deposition unit. When the radiant device is powered, the gas cooling device avoids or prevents the quartz tube from becoming hot. The radiant device is prevented from overheating. Therefore, the plasma generated around the radiating device is stabilized and / or enhanced. In addition, damage to process components is more efficiently prevented.

[0072] According to embodiments that may be combined with any other embodiment described herein, the radiating device may include the same configurations as described in connection with FIGS. 4A and 4B. The radiating device may include a cooling device placed in the hollow body. The cooling device can cool the hollow body. The hollow body may include a conductor. The cooling device may be configured to cool the conductor.

[0073] According to the embodiments described herein, the radiating device may include a composite cooling configuration. The composite cooling configuration may include a cooling device 246 disposed within the hollow body and a gas cooling device 248 disposed within the interior space 252. The cooling device 246 may include one or more cooling channels. Cooling fluid may be provided in one or more cooling channels. The gas cooling device 248 may include one or more gas cooling channels. Gas may be provided in one or more gas cooling channels. The gas and the cooling fluid can flow simultaneously through the cooling channel and the gas cooling channel, respectively. The temperature of the radiating device can be kept below 300 degrees Celsius, more specifically below 200 degrees Celsius.

Advantageously, combined cooling of the radiating device, i.e. cooling of the hollow body and the quartz tube, improves the thermal management of the deposition process. In particular, the temperature of the deposition unit running the PECVD process can be reduced in a beneficial way. Therefore, cooling of the hollow body or microwave antenna and / or quartz tube improves the thermal management of the deposition process. Combined cooling further benefits the useful life of process components contained in sedimentary units such as radiant devices and supply channels. In addition, the deposition process can be performed more uniformly and prevent damage to the substrate.

[0075] According to an embodiment that can be combined with any other embodiment of the present specification, a heating unit may be provided. The heating unit can be installed in the depositor. For example, the heating unit may be provided in a sedimentary compartment, eg, two or more edge regions of a sedimentary compartment. Further or alternatively, the heating unit may be provided within the transfer device, more specifically the transfer device. The heating unit may be configured to heat the first substrate segment and the second substrate segment. The first substrate segment and the second substrate segment may be located in the outer area of the transport device. In other words, the first substrate segment and the second substrate segment may be located at the respective longitudinal ends of the transport device.

Advantageously, heating of the first substrate segment and the second substrate segment can prevent or avoid the formation of folds and / or wrinkles on the substrate. Therefore, a uniform distribution of deposited material can be guaranteed. Further, by preventing folds and / or wrinkles, the substrate is prevented from adhering to the deposition device, which may facilitate the guidance of the substrate using the transport device.

[0077] According to the embodiments described herein, cooling of the radiating device and heating of the first substrate segment and the second substrate segment can be combined. For example, the radiating device may be cooled to adapt the process temperature within the deposition compartment, and the first substrate segment and the second substrate segment may be heated to further counteract the adverse effects of high process temperature. A synergistic positive effect may be provided to the sedimentation equipment and / or the deposition process.

Advantageously, coordinated thermal management of the depositor may be provided. First, the process temperature, eg, the temperature in the sedimentary compartment, is such that the temperature is low enough to avoid damage to the process components, yet high enough for the sedimentary process to work without disturbance. Can be adjusted to. The temperature of the substrate can then be fine-tuned to further avoid damage, thereby reducing or even preventing defective products and thus lowering manufacturing costs. The combination of temperature control of the radiating device and temperature control of the substrate, i.e. the first and second substrate segments, allows for more precise and more precise fine adjustment of the substrate temperature, i.e., the third temperature described above. It becomes. The deposition process can be improved and more efficient.

[0079] According to embodiments that can be combined with any other embodiment described herein, the depositor may include a controller. The controller may be configured to regulate the temperature of the depositor. For example, the controller is configured to regulate the temperature of the radiating device, regulate the temperature of the gas cooling device, and / or regulate the temperature of the heating unit. The controller may be set to various temperature values to provide the respective temperatures, for example, to the radiating device, the gas cooling device, and the heating unit.

[0080] FIG. 6 shows a flow diagram of method 600 for depositing material on a substrate according to the embodiments described herein. In the box 660, the radiating device is cooled. The radiating device includes a hollow body, in which the cooling device is placed. The cooling device may be a cooling device as described above with respect to the embodiments described herein. The radiating device may be a radiating device as described herein with respect to embodiments herein.

[0081] The radiating device may be placed within the deposition unit. The radiant device may include a microwave antenna to provide radiant energy to the deposition unit. For example, reactive and non-reactive gas species excited by the radiant energy provided by the radiant device may be provided to the deposition unit. Therefore, solid particles can be deposited on the substrate.

[0082] In box 670, the cooling device comprises one or more channels for guiding the cooling fluid through it, the cooling fluid being more specifically between 4 and 8 bar, particularly between 5 and 7 bar. Flows through the channel at a pressure of 6 bar. The pressure can be selected depending on the deposition process. The cooling fluid may be provided to allow heat transfer between the radiating device and the cooling fluid. For example, a radiating device produces heat when it provides radiation energy. The heat generated can be removed by the cooling fluid.

[0083] In the box 680, the hollow body is surrounded by a quartz tube, and an internal space is defined between the hollow body and the quartz tube. The interior space may include a gas cooling device. A gas cooling device may be provided to cool the gas. The gas is cooled and the gas flows through the interior space and / or the gas cooling device, respectively. The gas can cool the quartz tube via heat transfer by flowing through the interior space and / or the gas cooling device. Therefore, heat transfer away from the radiating device may be provided.

[0084] In box 690, the gas may be an inert gas selected from the group consisting of nitrogen and / or dry air. The gas can be selected according to the deposition process. In particular, the gas may allow microwaves to pass through the gas without or with less energy absorption.

[0085] Although the above description is intended for embodiments of the invention, other and further embodiments of the invention have been devised without departing from the basic scope of the invention and are within the scope of the invention. Is defined by the following claims.

Claims (15)

A radiating device (200) comprising a hollow body (250) and a cooling device (246) disposed within the hollow body. The radiation device (200) according to claim 1, wherein the hollow body extends in the length direction. The radiating device (200) according to claim 1 or 2, wherein the cooling device (246) is one or more channels and comprises one or more channels for guiding a cooling fluid through the one or more channels. The radiating device (200) according to claim 3, wherein the cooling fluid is a liquid containing, in particular, glycol, more specifically a mixture of water and glycol. The temperature of the cooling fluid is in the range of -30 degrees Celsius to 0 degrees Celsius, in particular in the range of -25 degrees Celsius to -5 degrees Celsius, more specifically in the range of -20 degrees Celsius to -10 degrees Celsius. The radiating device (200) according to claim 3 or 4. The radiating device (200) according to any one of claims 1 to 5, wherein the radiating device is a microwave antenna. An outer tube (255) that surrounds the hollow body (250), particularly an outer tube (255) that is a quartz tube.
An internal space (252) defined between the hollow body and the outer tube (255), an inlet opening configured to allow gas to enter the internal space, and the gas said. The radiation device (200) according to any one of claims 1 to 6, further comprising an outlet opening configured to allow exit from the interior space (252). A depositor (100) for depositing materials on a substrate.
Decompression chamber (102),
A transport device (140) for transporting the substrate,
A deposition apparatus (100) comprising one or more deposition units (110) and the radiating device (200) according to any one of claims 1-7. The deposition apparatus (100) according to claim 8, further comprising a gas cooling device (248) for cooling the gas. The deposition apparatus (100) according to claim 8, wherein the gas cooling device (248) is configured to provide a cooling gas which is a particularly inert gas to the internal space, according to claim 7. .. The depositing apparatus (100) according to any one of claims 8 to 10, further comprising a heating unit for heating the first substrate segment and the second substrate segment. The depositor further comprises a transport device (140) and one or more deposit compartments (120), the one or more deposit compartments (120) comprises one or more edge regions, and the heating unit comprises the transport. The deposition apparatus (100) according to claim 11, which is provided on the device and / or at least one of the one or more edge regions. A method for depositing material on a substrate using a depositor.
A method comprising cooling a radiating device comprising a hollow body with a cooling device disposed within the hollow body. The cooling device is one or more channels and comprises one or more channels for guiding a cooling fluid through the one or more channels, wherein the method further comprises.
13. The method of claim 13, comprising guiding the cooling fluid through the channel at a pressure between 4 bar and 8 bar, particularly between 5 bar and 7 bar, more specifically 6 bar. The hollow body is surrounded by a quartz tube, an internal space is defined between the hollow body and the quartz tube, and the method further comprises.
13. The method of claim 13 or 14, comprising cooling the gas and allowing the gas to flow through the interior space.

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