WO2020078556A1

WO2020078556A1 - Radiation device, deposition apparatus for depositing a material on a substrate and method for depositing a material on a substrate

Info

Publication number: WO2020078556A1
Application number: PCT/EP2018/078596
Authority: WO
Inventors: Jose Manuel Dieguez-Campo; Fabio Pieralisi; Steffen BRAUNGER; Neil Morrison; Tobias Stolley; Horst Alt; Gerhard Steiniger
Original assignee: Applied Materials, Inc.
Priority date: 2018-10-18
Filing date: 2018-10-18
Publication date: 2020-04-23
Also published as: JP2022512764A; CN112840443A; TW202025243A; KR20210076113A

Abstract

A radiation device (200) including a hollow body and a cooling device (246) arranged within the hollow body (250) is provided.

Description

RADIATION DEVICE, DEPOSITION APPARATUS FOR DEPOSITING A MATERIAL ON A SUBSTRATE AND METHOD FOR DEPOSITING A MATERIAL

ON A SUBSTRATE

FIELD OF INVENTION

[0001] Embodiments of the present invention relate to thin-film processing apparatuses, particularly to deposition systems, and more particularly to roll-to-roll (R2R) deposition systems. Embodiments of the present invention particularly relate to a radiation device, an apparatus and method for depositing a material on a substrate.

BACKGROUND

[0002] Processing of flexible substrates, such as plastic films or foils, is in high demand in the packaging industry, semiconductor industries and other industries. Processing may consist of coating of a flexible substrate with a material, such as a metal, in particular aluminum, semiconductors and dielectric materials and other treatments conducted on a substrate for the respective applications. Systems performing this task generally include a processing drum, e.g., a cylindrical roller, coupled to a processing system for transporting the substrate, and on which at least a portion of the substrate is processed. Roll-to-roll coating systems can, thereby, provide a high throughput system.

[0003] Typically, an evaporation process, such as a thermal evaporation process, can be utilized for depositing thin layers of metals which can be metallized onto flexible substrates. However, Roll-to-Roll deposition systems are also experiencing a strong increase in demand in the display industry and the photovoltaic (PV) industry. For example, touch panel elements, flexible displays, and flexible PV modules result in an increasing demand of depositing suitable layers in Roll-to-Roll coaters. However, such devices typically have several layers, which are e.g. manufactured with CVD processes and particularly also PECVD processes.

[0004] For the optimal deposition of materials onto substrates the process parameters of the different thermal evaporation processes need to be adjusted accordingly. Especially the thermal management of the processes plays a role in achieving high quality deposition of materials. Thereby, not only the overall thermal management of the processes needs to be improved but also the thermal regulation of several components influencing the processes.

SUMMARY

[0005] In light of the above, a radiation device, a deposition apparatus and a method for depositing a material on a substrate are provided. Further aspects, advantages, and features of the present disclosure are apparent from the dependent claims, the description, and the accompanying drawings.

[0006] According to an aspect, a radiation device is provided. The radiation device includes a hollow body and a cooling device arranged within the hollow body.

[0007] According to a further aspect, a deposition apparatus for the deposition of material on a substrate is provided. The deposition apparatus includes a vacuum chamber, one or more deposition units and a radiation device according to embodiments described herein.

[0008] According to a yet further aspect, a method for depositing a material on a substrate with a deposition apparatus is provided. The method includes cooling a radiation device comprising a hollow body with a cooling device being arranged within the hollow body.

[0009] Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. It includes method aspects for carrying out every function of the apparatus.

BRIEF DESCRIPTION OF DRAWINGS

[0010] So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the invention and are described in the following:

FIG.1 shows a top schematic view of a roll-to-roll deposition apparatus for depositing or coating the thin-film according to embodiments described herein;

FIG. 2 shows a cross section of a deposition unit according to embodiments described herein;

FIG. 3 shows a top view of a deposition unit according to embodiments described herein;

FIG. 4A shows a side view of a radiation device according to embodiments described herein;

FIG. 4B shows a cross section of a radiation device according to embodiments described herein;

FIG. 5 shows a side view of a radiation device according to embodiments described herein; and

FIG. 6 shows a flow diagram of a method according to embodiments described herein.

DETAILED DESCRIPTION

[0011] Reference will now be made in detail to the various embodiments of the invention, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the invention and is not meant as a limitation of the invention. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations. [0012] Embodiments described herein relate to a radiation device, in particular to a radiation device including a cooling device being arranged within the radiation device. The radiation device includes a hollow body. The cooling device may particularly be arranged within the hollow body. The radiation device may be configured as a plasma source in deposition processes. In particular, the radiation device may be configured as a plasma source for a plasma-enhanced chemical vapor deposition (PECVD) process.

[0013] FIG. 1 shows a schematic view of a deposition apparatus according to embodiments described herein. The deposition apparatus may include a vacuum chamber 102 and a transport device 140 for transporting the substrate. The deposition apparatus may include one or more deposition units 110. The deposition units may be configured for depositing a material on the substrate. The deposition apparatus further includes a radiation device 200. The one or more deposition units may be arranged such that the substrate is transported between the transport device 140 and the one or more deposition units 110.

[0014] According to embodiments described herein, the transport device may transport the substrate along the one or more deposition units. In each of the one or more deposition units, a radiation device may be included. The radiation device may be configured to allow for the deposition of material on the substrate. The radiation device may include a cooling device as further described below. The deposition apparatus may include one or more supply channels. The one or more supply channels may be configured for providing a material to the one or more deposition units.

[0015] According to further embodiments, the apparatus may include a gas cooling device. The gas cooling device may be configured for cooling a gas. The gas cooling device may be configured for providing a cooled gas to the radiation device.

[0016] According to embodiments described herein, a deposition apparatus for the deposition of material on a substrate e.g. for depositing a thin film on the substrate is provided. The substrate may be a flexible substrate. As exemplarily shown in FIG. 1, the deposition apparatus 100 may include a vacuum chamber 102. The vacuum chamber can have a first chamber portion 102A and a second chamber portion 102B. A third chamber portion (not shown) may be configured as a winding/unwinding chamber and can be separated from the remaining portions of the chamber for exchange of the flexible substrate such that the remaining chamber portions 102A/B do not need to be vented for removing the processed flexible substrate and evacuated after the new substrate has been inserted. For example the downtime of the apparatus can be reduced.

[0017] The deposition apparatus may include at least one deposition unit, in particular, the deposition apparatus may include more than two deposition units.

[0018] It is noted here that a flexible substrate or web as used with the embodiments described herein can be characterized in that it is bendable. The term“web” may be synonymously used with the term“strip” or the term“flexible substrate”. For example, the web, as described in embodiments herein, may be a foil or another flexible substrate. However, as described in more detail below, the benefits of embodiments described herein may also be provided for non-flexible substrates or carriers of other inline-deposition systems. Yet, it is understood that particular benefit can be utilized for flexible substrates and applications for manufacturing devices on flexible substrates.

[0019] According to embodiments and as shown in FIG. 1, a transport device 140 e.g. coating drum 142 having a rotation axis 111 may be provided in the apparatus. The coating drum 142 may have a curved outer surface for guiding and/or transporting the substrate along the curved outer surface. The substrate may be guided through a first vacuum processing region, e.g. of the upper most deposition unit 110 in FIG. 1, and at least one second vacuum processing region, e.g. of the second upper most deposition unit 110 in FIG. 1.

[0020] The embodiment depicted in FIG. 1 includes five deposition units 110, such as five deposition sources. The deposition units may be provided in processing regions, wherein the substrate being transported by the coating drum may be processed in the respective areas. Yet, it is to be understood that according to yet further embodiments, which can be combined with other embodiments described herein, two or more deposition units, e.g. deposition stations can be provided. For example, four, five, six, or even more deposition units, e.g. deposition stations can be provided. The processing regions may be separated from adjacent processing regions or further areas by gas separation units.

[0021] According to embodiments described herein, a first portion of the coating drum, i.e. an area of the cross-section of the coating drum perpendicular to the rotation axis, may be provided in the second chamber portion 102B and the remaining portion of the coating drum, i.e. an area of the cross-section of the coating drum perpendicular to the rotation axis, may be provided in the first chamber portion 102A. [0022] According to embodiments described herein, the first chamber portion 102A may have a convex shape wall portion. Convex is to be understood as either having a curved surface of the wall portion or having a plurality of flat surfaces adjacent to each other in order to provide for a convex shape of the plurality of surfaces. According to embodiments, the plurality of flat surfaces forming together the convex shape has the advantage that the below- mentioned vacuum flange connections can be provided at a flat surface, which is easier to manufacture.

[0023] Exemplarily relating to two of the five deposition units shown in FIG. 1, a first deposition unit 110 may correspond to the first processing region and at a second deposition unit 110 may correspond to the second vacuum processing region. According to embodiments described herein, at least two deposition units may be provided. At least two deposition units may include a flange portion for providing a vacuum connection to the first chamber portion 102A. The first chamber portion can have a convex shaped wall portion as described above, and at least two openings essentially parallel thereto, for example the at least two openings may be provided within the convex shaped wall portion or in a protrusion extending from the convex shaped wall portion, i.e. an extension of the convex shaped wall portion protruding essentially radially outward with respect to the coating drum axis.

[0024] According to embodiments, the at least two deposition units may be configured to be received in the at least two openings of the first chamber portion. The flange portions may provide a vacuum tight connection with the convex shaped wall portion of the first chamber portion or with the protrusion extending from the convex shaped wall portion. It is however to be understood that the flange portions may also be provided for the other deposition units shown in FIG.l.

[0025] Accordingly, the deposition units can be inserted from outside of the convex shaped wall portion of the first chamber portion 102A. On insertion, a vacuum flange can be connected. A vacuum region may be provided in the first chamber portion. According to embodiments, the deposition units can be inserted in the openings along an essential radial direction with respect to the axis of the transport device 140, e.g. the coating drum 142.

[0026] As described above, a portion of the deposition units 110 may be provided in vacuum, i.e. within the first chamber portion and/or inside with respect to the flange. Another portion of the deposition units may be provided outside of the region in which the vacuum in the vacuum chamber 102 is provided. The deposition units can easily be exchanged and supply of consumption media like cooling fluid, gas, electric power etc. can easily be provided. For example, a connection of the deposition unit to further elements like power supplies, gas supplies, pump devices and the like may be provided outside the first chamber portion 102A. The connection of the deposition unit to the further elements may form the above-mentioned other portion outside of the region.

[0027] As described above, FIG. 1 shows a deposition apparatus 100. The deposition apparatus 100 may include a vacuum chamber 102, which can be provided such that the vacuum can be generated in the chamber. Various vacuum processing techniques, and particularly vacuum deposition techniques, can be used to process the substrate or to deposit the thin-film on the substrate. As shown in FIG. 1, and as referred to herein, the deposition apparatus 100 may be a roll-to-roll deposition apparatus, bearing a flexible substrate 106 being guided and processed. The flexible substrate 106 may be guided in FIG. 1, as indicated by arrow 8, from the second chamber portion 102B to the first chamber portion 102A having the deposition units therein.

[0028] As mentioned above, according to embodiments, the vacuum chamber 102 may further include a third vacuum chamber portion which may be configured as a winding/unwinding chamber. The third vacuum chamber may include windings e.g. rolls for providing the substrate. The flexible substrate may be directed by rollers to transport device 140, e.g. the coating drum 142 being configured for guiding and/or transporting the substrate during processing and/or deposition. The substrate may be transported in a transport direction indicated by arrow 8. It is to be understood that the substrate may also be transported in the reverse direction indicated by arrow 8. From the coating drum 142, the substrate 106 may be guided back into the second chamber portion 102B and the third chamber portion, respectively.

[0029] According to embodiments described herein, the third chamber portion may include an unwinder for supplying the substrate. The substrate may then be guided via rollers towards the transport device 140, e.g. the coating drum 142. The substrate may be guided via the curved surface of the coating drum 142. The coating drum may transport the substrate along the processing regions for allowing the deposition of particles on the substrate. The substrate may be transported between the curved surface of the coating drum and the respective deposition unit. For example, the substrate may be guided through a slit between the coating drum and the deposition unit. The coating drum 142 may transport the substrate back to the third vacuum chamber portion via rollers to a winder to receive the processed substrate. The winder and the unwinder may be rolls. The winder and/or the unwinder may be removably arranged in the third chamber portion.

[0030] According to yet further embodiments for operating and using a deposition apparatus as described herein, deposition of layers or a stack of layers for ultra high barrier stacks or flexible TFT devices can be provided. Ultra high barrier stacks or flexible TFT devices are e.g. composed of a series of layers, which are e.g. deposited with PECVD or PVD processes or combinations thereof. Because of the high demands on the quality of the different films it is common use to deposit the single films in specially designed systems for each single film. To bring down costs and make the applications commercially available, it is an improvement to combine the deposition of at least sets or combinations of films in one single coater. According to embodiments described herein, a modular concept which allows the combination of several process modules is provided. In light of the above, according to some embodiments described herein, flexible ultra high barriers for OLED display and/or lighting, flex solar, or other electronic devices with the need for protection from an adjacent environment can be provided. For example, this can include the deposition of etch stop, gate dielectric, channel, source gate and drain electrodes for flexible TFT.

[0031] As further indicated in FIG. 1, the second chamber portion 102B may be inclined with respect to a vertical or horizontal orientation of the third chamber portion (not shown). The angle of inclination can be 20° to 70° relative the vertical. The inclination may be such that the coating drum is displaced downwardly as compared to a horizontal arrangement of the similar components without inclination. The inclination of the second chamber portion 102B allows for providing additional deposition units to be provided such that the axis (see lines 1 shown in FIG. 1), e.g. the symmetry axis of the deposition units, is at the same height, above or below the axis of the coating drum 142. As shown in FIG. 1, the five deposition units may be provided above or at the height of the rotation axis of the coating drum or below. Flaking and falling of generated particles on the substrate can be reduced or omitted.

[0032] According to embodiments described herein, the deposition unit may include a deposition compartment. The deposition compartment may include one or more edge regions. The one or more edge regions may be considered as upper side limitations of the deposition compartment i.e. the deposition chamber. The one or more edge regions may form a frame surrounding the deposition chamber. For example, the one or more edge regions may be arranged at the short side of the deposition compartment.

[0033] According to embodiments described herein, the one or more edge regions may be defined by the dimensions of the deposition compartment. Considering a two dimensional shape, the deposition compartment may have a substantial rectangular shape. The deposition compartment may have two parallel long sides and two parallel short sides. Accordingly, the long sides may be extended in length in comparison to the short sides. The two or more edge regions may be arranged at the long sides and/or the short sides of the deposition compartment.

[0034] As exemplarily shown in FIG. 3, the deposition compartment may include one or more supply channels 130 and optionally a radiation device 200. The deposition compartment may include at least two edge regions 124, particularly, the deposition compartment may include four edge regions 124.

[0035] According to embodiments described herein, the deposition apparatus may include a heating unit 300. The heating unit 300 may be arranged at the deposition compartment, e.g. at the two or more edge regions 124 shown in FIG. 3. The heating unit may be provided at at least one of the two or more edge regions of the deposition compartment. More particularly, the heating unit may be provided at two of the two or more edge regions. The heating unit may be provided at the short sides of the deposition compartment. For example, the heating unit may be attached to the two or more edge regions.

[0036] According to embodiments described herein, the heating unit may include one or more heating devices 325. The one or more heating devices 325 may be arranged with the two or more edge regions. In particular, each of the two or more edge regions may include one of the one or more heating devices 325. More particularly, the two or more edge regions on the short side of the deposition compartment may include one heating device each. Additionally or alternatively, more than one heating device may be arranged at the two or more edge regions. The one or more heating devices may be selected from the group consisting of ceramic inlays, radiation heaters, resistive heaters or combinations thereof.

[0037] According to embodiments described herein, the heating unit may be configured to locally heat the substrate 106. For example, the heating unit i.e. the one or more heating devices, may be configured such that only a part of the substrate is heated. This part may be arranged with the two or more edge regions.

[0038] The substrate may be considered to include several substrate segments. In particular, the substrate 106 may include three substrate segments. The substrate may include a first substrate segment, a second substrate segment and/or a third substrate segment. Present embodiments may provide for the possibility to heat only specific segments of the substrate.

[0039] According to embodiments described herein, the heating unit may be provided at the transport device 140. For example, the heating unit may be arranged within the coating drum 142. The heating device may be arranged such that the first substrate segment and/or the second substrate segment exclusively receive heat from the heating unit i.e. the one or more heating devices. For example, the one or more heating devices may be placed at segments of the coating drum that correspond to the first substrate segment and/or to the second substrate segment.

[0040] FIG. 2 shows a cross section of a deposition unit and FIG. 3 shows a top view of a deposition unit according to embodiments described herein. The deposition unit 110 may include a housing 112. The deposition unit 110 may include an inner shielding, e.g. a pump shielding. The inner shielding may line the housing limiting a deposition chamber within the housing. The deposition unit may further include a deposition opening 126. The deposition opening 126 may extend e.g. in between the inner shielding. In other words, the deposition opening may have the same dimensions as the deposition chamber. According to embodiments, the deposition opening 126 may be narrower than the dimension of the deposition chamber.

[0041] According to embodiments described herein, the deposition unit may include a temperature regulation 118. The temperature regulation 118 may be configured to cool the deposition unit i.e. the housing 112 of the deposition unit. The temperature regulation may further be configured to cool the inner shielding. For example, cooling channels may be included in the housing 112. A cooling fluid may be transported through the cooling channels for enabling a heat transfer between the deposition chamber and the cooling fluid.

[0042] The deposition unit may further include one or more supply channels 130. The one or more supply channels may include one or more gas supply lines. Particularly, the deposition unit may include two supply channels 130. The deposition unit further includes a radiation device 200.

[0043] According to embodiments described herein, the one or more supply channels 130 may be arranged in an upper section of the deposition unit. The one or more supply channels may be in fluid communication with supply arrangements e.g. gas tanks. For example, when two gas supply lines are provided, one gas supply line may be in fluid communication with one supply arrangement and the second gas supply line may be in fluid communication with a second supply arrangement. As shown in FIG. 2, the one or more supply channels may be arranged in the same horizontal plane of the deposition unit.

[0044] The one or more supply channels 130 may extend in a direction perpendicular to the paper plane of FIG. 2. Along the one or more supply channels 130, a plurality of openings may be arranged to allow a material to enter the deposition unit i.e. the deposition chamber. The openings may provide e.g. gas to the deposition chamber. The openings may be provided as nozzles.

[0045] According to embodiments described herein, the deposition unit may include a radiation device 200. The radiation device may be arranged in a central position e.g. in a lower section of the deposition unit 110. For example, the radiation device may be arranged between the two supply channels. The radiation device may be arranged in a plane different from the plane of the supply channels. For example, the plane of the radiation device may be below the plane of the supply channels in a vertical direction. Additionally or alternatively, the radiation device may be arranged such that radiation energy may be provided in the direction of the one or more supply channels.

[0046] According to embodiments described herein, the transport device 140 may be arranged above the upper section of the deposition unit. It is to be understood that the terms “upper” and“lower” relate to the orientation of the deposition unit as exemplarily shown in FIG. 2. The deposition unit may be arranged at different angles of the transport device as shown with respect to FIG. 1. The transport device 140 may provide the substrate at the deposition opening 126. For example, a movement of the transport device may provide the substrate along the deposition opening. The movement of transport device may provide the substrate at a constant velocity or the movement of the transport device may be started and stopped several times. The transport device may be a coating drum 142. [0047] According to embodiments described herein, the deposition unit may include a gas separation unit 122. The gas separation unit may be configured for separating the first vacuum processing region and at least one second vacuum processing region. The gas separation unit may be adapted to form a slit through which the substrate can pass between the outer surface of the transport device and the gas separation unit. The gas separation unit may be adapted to control fluid communication between the first processing region and the second processing region. The fluid communication may be controlled by adjusting the position, e.g. the radial position, of the gas separation unit.

[0048] According to different embodiments, which can be combined with other embodiments described herein, an actuator of a gas separation unit 122 for providing the radial position can be selected from the group consisting of an electrical motor, a pneumatic actuator such as a pneumatic cylinder, a linear drive, and a hydraulic actuator such as a hydraulic cylinder.

[0049] According to embodiments described herein, the deposition opening may allow for material to reach the substrate. In other words, the deposition opening may allow the material to be deposited on the substrate transported by the transport device.

[0050] According to embodiments described herein, the deposition unit may be a reaction chamber. A vacuum may be applied to the deposition unit. The reaction chamber may enable a PECVD process, a CVD process, a PCD process, a sputter process or combinations thereof. For example, a chemical reaction may take place in the deposition unit or deposition chamber. The supply channels may guide a gas, in particular a reactive gas, into the deposition chamber. For example, two different types of gas may be provided. A chemical reaction may take place resulting in the deposition of particles on the substrate. The particles may be solid particles. For example, a support gas and a feedstock gas may be provided.

[0051] According to embodiments that can be combined with any other embodiment described herein, the radiation device may provide radiation energy. The radiation device may provide radiation energy for generating a plasma. The plasma may be generated around the radiation device. For example, the radiation device may be provided for igniting the plasma.

[0052] With exemplary respect to FIGs. 4A and 4B a side view and a cross-section of a radiation device according to embodiments is described herein. The radiation device 200 may have an axis of symmetry 2. The radiation device 200 may include a hollow body 250. The hollow body 250 may extend in a length direction of the radiation device along the axis 2. The radiation device may have a cylindrical shape. The length of the radiation device along the axis 2 may be adapted to the dimensions of the deposition unit. The radiation device may be connected to a power source e.g. the hollow body may be connected to a power source. The radiation device may include a coaxial connector.

[0053] According to embodiments described herein, the radiation device may have a cylindrical shape. The radiation device may extend in a length direction. For example, the length direction may be parallel to the long side of the deposition compartment. The radiation device may have a diameter of 6 cm, more particularly of 3 cm. The radiation device may have a length of 3 m, more particularly of 2 m. The radiation device may have a diameter to length ratio of 1:66.

[0054] The radiation device may include an outer tube 255. The outer tube may surround the hollow body 250. The outer tube may extend along the axis 2 of the radiation device. The length of the outer tube along the axis 2 may be similar to the length of the hollow body. The outer tube 255 may be configured as a vacuum isolation. The outer tube 255 may be a quartz tube. Quartz is beneficial to allow the radiation waves, i.e. microwaves, to pass the outer tube without being absorbed or with only little of the microwaves being absorbed.

[0055] The radiation device may include a cooling device 246. The cooling device 246 may be arranged within the hollow body 250. The cooling device may extend in a length direction along the axis 2 of the radiation device. The cooling device may line an inner area of the hollow body 250. The cooling device may be configured to cool the hollow body. Cooling of the hollow body may include a heat transfer between the hollow body and the cooling device.

[0056] The hollow body 250 may include a conductor. The conductor may be provided with energy at a first energy port and/or a second energy port. The conductor may be made from copper (Cu) or from any other metal suitable for the application of providing radiation energy. A power source may provide energy to the conductor. High-frequency radiation waves may be transferred via the conductor. For example, microwaves are generated and transferred via the conductor. The radiation waves may be provided for generating a plasma around the radiation device.

[0057] According to embodiments described herein, the radiation device may be connected to one or more magnetron sources. For example, at the first energy port and/or the second energy port the one or more magnetron sources may be arranged. The one or more magnetron sources may be configured to provide electromagnetic energy, i.e. electromagnetic waves to the conductor. The one or more magnetron sources may include a high-powered vacuum tube to generate microwaves using the interaction of a stream of electrons with a magnetic field while moving past a series of open metal cavities. Electrons pass by the openings to these cavities and cause radio waves to oscillate within. The microwaves may be generated from direct current electricity supplied to the vacuum tube e.g. by the power source.

[0058] For example, a gas may be supplied by the supply channels described with respect to FIG. 2. Particles provided by the gas may form the plasma around the radiation device. Particularly, the support gas may form the plasma around the radiation device.

[0059] According to embodiments described herein, the radiation device may be a microwave antenna. A high-frequency in the range of 915 Mhz to 5.8 Ghz may be applied to the microwave antenna, particularly a high-frequency of 2.45 Ghz may be applied to the microwave antenna. The microwave antenna may be configured for generating a plasma built along the length of the radiation device. The plasma may surround the radiation device. Thus, a high plasma density may be achieved. The microwave antenna may extend through the dimension of the deposition chamber. The plasma may thus be provided along a direction perpendicular to the substrate transport direction.

[0060] According to embodiments described herein, the cooling device 246 may include one or more cooling channels for guiding a cooling fluid therethrough. The cooling channels may include an entry fluid port 242 and an exit fluid port 244. The entry fluid port 242 may be arranged on one end region of the radiation device and the exit fluid port 244 may be arranged on a second end region of the radiation device. The cooling fluid may enter the cooling device through the entry fluid port. The cooling fluid may exit the cooling device through the exit fluid port. The cooling fluid may allow for heat exchange between the radiation device and the cooling fluid. By flowing through the cooling channels, the cooling fluid may transport the heat generated by the radiation device away from the radiation device.

[0061] According to embodiments described herein, the cooling fluid may be a liquid that particularly includes glycol, more particularly a mixture of water and glycol. The cooling fluid may include a temperature in the range of -30 °C to 0 °C, particularly in the range of -25 °C to -5 °C, more particularly in a range of -20 to -10 °C. The cooling fluid may be provided at a pressure of between 4 and 8 bar, particularly between 5 and 7 bar, more particularly 6 bar. The pressure of the cooling fluid may be chosen depending on the deposition process.

[0062] For example, in operation, energy may be provided to the conductor. The conductor heats up due to the energy provided, the energy increasing the temperature of the radiation device. This may lead to an increase in temperature in the deposition unit i.e. the deposition chamber. Such increase in temperature may disturb the deposition process and also damage the components involved into the deposition process, e.g. the conductor.

[0063] Generally, the radiation device i.e. the microwave antenna generates heat by providing radiation energy to the deposition process. Advantageously, the cooling device may provide cooling of the microwave antenna. Thus, the temperature inside the deposition chamber may be regulated. Further, the cooling device counteracts the generated heat of the microwave antenna. Damages and/or alterations of the substrate can be avoided. For example, folding of the substrate can be avoided and/or prevented. This allows for a more uniform deposition of particles on the substrate. Furthermore, a degradation of the reacting species may be prevented and/or avoided. Furthermore, by cooling the radiation device the uniformity of the plasma generated at the radiation device may be increased. Further advantageously, the radiation device and/or the conductor may be protected from damages due to overheating.

[0064] FIG. 4B shows a cross-section of the radiation device according to embodiments described herein. FIG. 4B is an exemplary cross-section of the radiation device shown in FIG. 4A. Around the axis 2, the cooling device 246 may be arranged. The hollow body 250 may be arranged around the cooling device. The outer tube 255 may be arranged around the hollow body. An inner space may be provided between the outer tube 255 and the hollow body 250.

[0065] For example, between the outer tube and the hollow body, the inner space 252 may be provided. Between the cooling device and the outer tube, the conductor may be arranged. Between the conductor and the outer tube the inner space 252 may be provided.

[0066] According to embodiments described herein and with respects to FIG. 5, the radiation device 400 may include a quartz tube surrounding the hollow body 250. The radiation device may include an inner space defined between the hollow body and the quartz tube and an entry opening 247 configured for allowing a gas to enter the inner space and an exit opening 249 configured for allowing the gas to exit from the inner space.

[0067] A gas cooling device may be configured to cool a gas. The gas cooling device may be configured to provide cooled gas to the inner space 252. The inner space may include one or more gas cooling devices. The entry opening 247 and the exit opening 249 may be connected by the gas cooling device 248. The gas cooling device may include one or more gas cooling channels. The one or more gas cooling channels may include the channel provided by the inner space 252.

[0068] The gas cooling device may be provided with a gas. For example, the gas cooling device may be provided with an inert gas. The gas may be selected from an inert gas, in particular, one or more elements from the group consisting of nitrogen, and/or dry air. The choice of the inert gas is dependent on the penetrability of the gas for radiation energy i.e. for high-frequency radiation waves. It is beneficial if no absorption or little absorption of the radiation waves may take place by the inert gas. The gas may be provided through the entry opening of the gas cooling device to enter the gas cooling device. The gas may exit the gas cooling device through the exit opening. The gas may be guided through the gas cooling device and/or the gas cooling channels.

[0069] According to embodiments, the gas may be provided at room temperature. For example, the gas may be provided at a temperature of 20 °C ± 5 °C. The gas may be provided at a processing temperature in a range between -30°C to 30 °C, particularly in a range between 0 °C to 25 °C, more particularly in a range between 10 °C and 20 °C. The gas may be cooled to the processing temperature before being provided through the entry opening.

[0070] According to embodiments which can be combined with any other embodiment described herein, the gas cooling device may be configured to cool the radiation device. In particular, the gas cooling device may be configured to cool the outer tube surrounding the hollow body. The gas may be flown through the gas cooling device for allowing a heat transfer between the quartz tube and the gas and/or the hollow body and the gas.

[0071] Advantageously, the gas cooling device contributes to a decrease of the temperature in the deposition unit. When the radiation device is powered, the gas cooling device avoids or prevents the quartz tube from heating up. The radiation device is prevented from overheating. Accordingly, the plasma generated around the radiation device is stabilized and/or enforced. Further, damage of process components is prevented more efficiently.

[0072] According to embodiments that can be combined with any other embodiment described herein, the radiation device may include the same configuration as described with respect to FIGs. 4A and 4B. The radiation device may include a cooling device arranged within the hollow body. The cooling device may cool the hollow body. The hollow body may include a conductor. The cooling device may be configured to cool the conductor.

[0073] According to embodiments described herein, the radiation device may include a combined cooling arrangement. The combined cooling arrangement may include the cooling device 246 arranged within the hollow body and the gas cooling device 248 arranged in the inner space 252. The cooling device 246 may include one or more cooling channels. A cooling fluid may be provided in the one or more cooling channels. The gas cooling device 248 may include one or more gas cooling channels. A gas may be provided in the one or more gas cooling channels. The gas and the cooling fluid may flow simultaneously through the cooling channels and the gas cooling channels, respectively. The temperature of the radiation device may be held below 300 °C, more particularly below 200 °C.

[0074] Advantageously, the combined cooling of the radiation device i.e. the cooling of the hollow body and the cooling of the quartz tube, improves the heat management of the deposition process. Especially the temperature of a deposition unit running a PECVD process may be lowered in a beneficial way. Thus, cooling of the hollow body i.e. the microwave antenna and/or the quartz tube improves the thermal management of the deposition process. The combined cooling further benefits the service life of the process components included in the deposition unit like the radiation device, the supply channels and the like. Additionally, the deposition process may be performed more uniformly and the substrate is prevented from damages.

[0075] According to embodiments that can be combined with any other embodiment herein, a heating unit may be provided. The heating unit may be provided at the deposition apparatus. For example, the heating unit may be provided at the deposition compartment, e.g. at two or more edge regions of the deposition compartment. Additionally or alternatively, the heating unit may be provided at the transport device, more particularly within the transport device. The heating unit may be configured for heating a first substrate segment and a second substrate segment of the substrate. The first substrate segment and the second substrate segment may be arranged at outer areas of the transport device. In other words, the first substrate segment and the second substrate segment may be arranged at the respective longitudinal ends of the transport device.

[0076] Advantageously, heating of the first substrate segment and the second substrate segment may prevent or avoid the formation of folds and/or wrinkles at the substrate. Thus, a uniform distribution of the material to be deposited may be ensured. Further, guidance of the substrate with the transport device may be facilitated since the prevention of folds and/or wrinkles prevent the substrate from getting stuck in the deposition apparatus.

[0077] According to embodiments described herein, cooling of the radiation device and heating of the first substrate segment and the second substrate segment may be combined. For example, the radiation device may be cooled to adapt the process temperature in the deposition compartment and the first substrate segment and the second substrate segment may be heated to further counteract adverse effects of high process temperatures. Synergistic positive effects may be provided to the deposition apparatus and/or the deposition process.

[0078] Advantageously, a coordinated thermal management of the deposition apparatus can be provided. Firstly, the process temperature e.g. the temperature in the deposition compartment can be regulated such that the temperature is high enough for the deposition process to work disturbance-free while being low enough to avoid damage of process components. Secondly, the temperature of the substrate can be finely adjusted to further avoid damages, which reduces or even prevents rejects and thus, lowers production costs. The combination of the temperature regulation of the radiation device and the temperature regulation of the substrate i.e. the first substrate segment and the second substrate segment may further allow for an even more precise and more accurate fine regulation of the substrate temperature i.e. the third temperature mentioned above. The deposition process may be improved and may be made more efficient.

[0079] According to embodiments that can be combined with any other embodiment described herein, the deposition apparatus may include a controller. The controller may be configured to regulate the temperature of the deposition apparatus. For example, the controller is configured to regulate the temperature of the radiation device, to regulate the temperature of the gas cooling device and/or to regulate the temperature of the heating unit. The controller may for example be set to different temperature values to provide the temperatures to the radiation device, the gas cooling device and the heating unit, respectively.

[0080] FIG. 6 shows a flow diagram of a method 600 for depositing a material on a substrate according to embodiments described herein. In box 660 a radiation device is cooled. The radiation device includes a hollow body and a cooling device is arranged within the hollow body. The cooling device may be a cooling device as described with respect to the embodiments described herein. The radiation device may be a radiation device as described herein with respect to the embodiments herein.

[0081] The radiation device may be arranged in a deposition unit. The radiation device may include a microwave antenna for providing radiation energy to the deposition unit. For example, reactive and non-reactive gas species may be provided to the deposition unit which are excited by the radiation energy provided by the radiation device. Thus, solid particles may be deposited on the substrate.

[0082] In box 670, the cooling device includes one or more channels for guiding a cooling fluid therethrough and the cooling fluid flows through the channels with a pressure of between 4 and 8 bar, particularly between 5 and 7 bar, more particularly 6 bar. The pressure may be chosen dependent on the deposition process. The cooling fluid may be provided to allow for a heat transfer between the radiation device and the cooling fluid. For example, the radiation device generates heat upon providing radiation energy. The generated heat may be removed by the cooling fluid.

[0083] In box 680, the hollow body is surrounded by a quartz tube and an inner space is defined between the hollow body and the quartz tube. The inner space may include a gas cooling device. The gas cooling device may be provided for cooling a gas. A gas is cooled and the gas flows through the inner space and/or the gas cooling device, respectively. By flowing through the inner space and/or the gas cooling device, the gas may cool the quartz tube via heat transfer. Thus, transportation of the heat away from the radiation device may be provided.

[0084] In box 690, the gas may be an inert gas selected from the group consisting of nitrogen, and/or dry air. The gas may be chosen according to the deposition process. Particularly, the gas may allow for microwaves to pass through the gas without absorbing energy or with less absorption of energy. [0085] While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. Radiation device (200), comprising:

a hollow body (250); and

a cooling device (246) arranged within the hollow body.

2. The radiation device (200) according to claim 1, wherein the hollow body extends in a length direction.

3. The radiation device (200) according to claims 1 or 2, wherein the cooling device (246) comprises one or more channels for guiding a cooling fluid therethrough.

4. The radiation device (200) according to claim 3, wherein the cooling fluid is a liquid that particularly includes glycol, more particularly a mixture of water and glycol.

5. The radiation device (200) according to any of claims 3 or 4, wherein the cooling fluid comprises a temperature in the range of -30 °C to 0 °C, particularly in the range of - 25 °C to -5 °C, more particularly in a range of -20 to -10 °C.

6. The radiation device (200) according to any of the preceding claims, wherein the radiation device is a microwave antenna.

7. The radiation device (200) according to any of the preceding claims, further comprising:

an outer tube (255) surrounding the hollow body (250), wherein the outer tube particularly is a quartz tube; an inner space (252) defined between the hollow body and the outer tube (255); and an entry opening configured for allowing a gas to enter the inner space and an exit opening configured for allowing the gas to exit from the inner space (252).

8. A deposition apparatus (100) for the deposition of material on a substrate, comprising:

a vacuum chamber (102);

a transport device (140) for transporting the substrate;

one or more deposition units (110); and

a radiation device (200) according to any of claims 1 to 7.

9. The deposition apparatus (100) according to claim 8, further comprising:

a gas cooling device (248) for cooling a gas.

10. The deposition apparatus (100) according to claim 8 if dependent on claim 7, wherein the gas cooling device (248) is configured to provide a cooled gas to the inner space, wherein the cooled gas particularly is an inert gas.

11. The deposition apparatus (100) according to claims 8 to 10, wherein the deposition apparatus further comprises a heating unit for heating a first substrate segment and a second substrate segment.

12. The deposition apparatus (100) according to claim 11, the deposition apparatus further comprising a transport device (140) and one or more deposition compartments (120), the one or more deposition compartments (120) comprising one or more edge regions, wherein the heating unit is provided at the transport device and/or at at least one of the one or more edge regions.

13. Method for depositing a material on a substrate with a deposition apparatus, the method comprising: cooling a radiation device comprising a hollow body with a cooling device being arranged within the hollow body.

14. The method according to claim 13, wherein the cooling device comprises one or more channels for guiding a cooling fluid therethrough, the method further comprising: guiding the cooling fluid through the channels with a pressure of between 4 and 8 bar, particularly between 5 and 7 bar, more particularly 6 bar.

15. The method according to claims 13 or 14, wherein the hollow body is surrounded by a quartz tube and an inner space is defined between the hollow body and the quartz tube, the method further comprising:

cooling a gas; and

flowing the gas through the inner space.