TW202032627A - Deposition apparatus for depositing a material on a substrate and method for depositing a material on a substrate with a deposition apparatus - Google Patents
Deposition apparatus for depositing a material on a substrate and method for depositing a material on a substrate with a deposition apparatus Download PDFInfo
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- TW202032627A TW202032627A TW108137409A TW108137409A TW202032627A TW 202032627 A TW202032627 A TW 202032627A TW 108137409 A TW108137409 A TW 108137409A TW 108137409 A TW108137409 A TW 108137409A TW 202032627 A TW202032627 A TW 202032627A
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- 238000000151 deposition Methods 0.000 title claims abstract description 274
- 230000008021 deposition Effects 0.000 title claims abstract description 250
- 239000000463 material Substances 0.000 title claims abstract description 45
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
本揭露之數個實施例是有關於數個薄膜處理設備,特別是有關於數種沈積系統,及特別是有關於卷對卷(roll-to-roll,R2R)沈積系統。本揭露之數個實施例特別是有關於一種輻射裝置、一種用以沈積一材料於一基材上之設備及方法。The several embodiments of the present disclosure are related to several thin film processing equipments, particularly to several deposition systems, and particularly to roll-to-roll (R2R) deposition systems. The several embodiments of the present disclosure particularly relate to a radiation device, an apparatus and method for depositing a material on a substrate.
處理撓性基材係在封裝產業、半導體產業及其他產業中有高度的需求,此撓性基材例如是塑膠膜或箔。處理可由利用材料塗佈撓性基材,及針對個別之應用在基材上執行之其他處理所組成。此材料例如是金屬、半導體及介電材料,金屬特別是鋁。執行此工作之系統一般包括舉例為圓柱滾軸之處理鼓。處理鼓係耦接於用以傳送基材之處理系統,及在處理鼓上之至少一部份的基材係進行處理。卷對卷塗佈系統可因而提供高產量之系統。Processing flexible substrates is highly demanded in the packaging industry, semiconductor industry, and other industries. The flexible substrates are, for example, plastic films or foils. The treatment may consist of coating a flexible substrate with a material, and other treatments performed on the substrate for individual applications. Such materials are, for example, metals, semiconductors and dielectric materials, and metals are especially aluminum. The system for performing this work generally includes a processing drum such as a cylindrical roller. The processing drum is coupled to a processing system for conveying the substrate, and at least a part of the substrate on the processing drum is processed. The roll-to-roll coating system can thus provide a high-volume system.
一般來說,例如是熱蒸發製程之蒸發製程可利用來沈積金屬薄層,金屬薄層可金屬化於撓性基材上。然而,卷對卷沈積系統亦在顯示產業及光伏(photovoltaic,PV)產業中面臨強烈增加的需求。舉例來說,觸控面板元件、可彎曲顯示器、及可彎曲PV模組係對在卷對卷塗佈機中沈積適當層之需求增加。然而,此些裝置一般具有數層,此些層通常利用化學氣相沈積(CVD)製程及特別是亦利用電漿輔助化學氣相沈積(PECVD)製程製造。Generally, an evaporation process, such as a thermal evaporation process, can be used to deposit a thin metal layer, which can be metalized on a flexible substrate. However, roll-to-roll deposition systems are also facing a strong increase in demand in the display industry and photovoltaic (PV) industry. For example, touch panel elements, bendable displays, and bendable PV modules have increased the demand for depositing appropriate layers in roll-to-roll coaters. However, these devices generally have several layers, and these layers are usually manufactured using a chemical vapor deposition (CVD) process and especially also a plasma assisted chemical vapor deposition (PECVD) process.
為了最佳沈積材料於基材上,不同的熱蒸發製程之製程參數必須對應地調整。特別是,製程的熱管理係在達成高品質沈積材料中扮演重要的角色。因此,不僅製程的整體熱管理必須改善,影響製程之數種元件的熱調節亦需要改善。In order to optimally deposit the material on the substrate, the process parameters of different thermal evaporation processes must be adjusted accordingly. In particular, the thermal management of the process plays an important role in achieving high-quality deposition materials. Therefore, not only the overall thermal management of the process must be improved, but also the thermal regulation of several components that affect the process.
有鑑於上述及根據一方面,提出一種用以沈積一材料於一基材上之沈積設備。沈積設備包括一傳送裝置,裝配以傳送基材;一或多個沈積單元,裝配以沈積材料於基材上;一沈積隔室,沈積隔室包括二或多個邊緣區域;以及一加熱單元,裝配以在一第一基材區段及一第二基材區段面對沈積隔室之此二或多個邊緣區域,在第一基材區段及第二基材區段專門加熱基材。In view of the above and one aspect, a deposition device for depositing a material on a substrate is proposed. The deposition equipment includes a conveying device configured to convey the substrate; one or more deposition units configured to deposit materials on the substrate; a deposition compartment including two or more edge regions; and a heating unit, Assembled so that a first substrate section and a second substrate section face the two or more edge regions of the deposition compartment, and the substrate is specifically heated in the first substrate section and the second substrate section .
根據一其他方面,提出一種用以沈積一材料於一基材上之沈積設備。沈積設備包括一傳送裝置,傳送裝置包括二個傳送裝置邊緣部。沈積設備包括一或多個沈積單元,包括一或多個沈積隔室,此一或多個沈積隔室包括二或多個邊緣區域。沈積設備包括一加熱單元。由此二個傳送裝置邊緣部及此二或多個沈積隔室邊緣區域所組成之群組的至少一者包括加熱單元。According to another aspect, a deposition device for depositing a material on a substrate is provided. The deposition equipment includes a conveyor, and the conveyor includes two edge portions of the conveyor. The deposition equipment includes one or more deposition units, including one or more deposition compartments, and the one or more deposition compartments include two or more edge regions. The deposition equipment includes a heating unit. Thus, at least one of the group consisting of the two edge portions of the conveyor and the edge regions of the two or more deposition compartments includes a heating unit.
根據一其他方面,提出一種用以利用一沈積設備沈積一材料於一基材上的方法。沈積設備包括一沈積隔室及一或多個沈積單元。此方法包括利用一加熱單元專門加熱一傳送裝置所傳送之一第一基材區段及一第二基材區段,第一基材區段及第二基材區段係面對沈積隔室之二或多個邊緣區域。According to another aspect, a method for depositing a material on a substrate using a deposition equipment is provided. The deposition equipment includes a deposition compartment and one or more deposition units. The method includes using a heating unit to specifically heat a first substrate section and a second substrate section conveyed by a conveying device, the first substrate section and the second substrate section facing the deposition compartment Two or more edge areas.
數個實施例係亦有關於用以執行所揭露之方法之設備,且包括用以執行各所述之方法方面之設備部件。此些方法方面可藉由硬體元件、由合適軟體程式化之電腦、兩者之任何結合或任何其他方式執行。再者,根據本揭露之數個實施例係亦有關於用以操作所述之設備的方法。它包括用以執行設備之各功能的方法方面。為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下:Several embodiments also relate to equipment used to perform the disclosed methods, and include equipment components used to perform each of the described methods. These methods can be implemented by hardware components, computers programmed by suitable software, any combination of the two, or any other means. Furthermore, several embodiments according to the present disclosure also relate to methods for operating the described equipment. It includes the methodological aspects used to perform the functions of the device. In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are given in conjunction with the accompanying drawings to describe in detail as follows:
詳細的參照將以本發明之數種實施例來達成,本發明之數種實施例的一或多個例子係繪示於圖式中。在下方圖式之說明中,相同的參考編號係意指相同的元件。一般來說,僅有有關於個別實施例之相異處係進行說明。各例子係藉由說明本發明的方式提供且不意味為本發明之一限制。再者,所說明或敘述而做為一實施例之部份之特徵可用於其他實施例或與其他實施例結合,以取得再其他實施例。此意指本說明包括此些調整及變化。Detailed reference will be made with several embodiments of the present invention. One or more examples of the several embodiments of the present invention are shown in the drawings. In the description of the drawings below, the same reference numbers refer to the same elements. Generally speaking, only the differences between individual embodiments are explained. Each example is provided by way of illustrating the present invention and is not meant to be a limitation of the present invention. Furthermore, the features described or described as part of one embodiment can be used in other embodiments or combined with other embodiments to obtain still other embodiments. This means that this description includes these adjustments and changes.
此處所述之數個實施例係有關於一種用以沈積一材料於一基材上之沈積設備。沈積設備包括一傳送裝置,裝配以傳送基材;一或多個沈積單元,裝配以沈積材料於基材上;一沈積隔室,沈積隔室包括二或多個邊緣區域;以及一加熱單元,裝配以在一第一基材區段及一第二基材區段面對沈積隔室之此二或多個邊緣區域,在第一基材區段及第二基材區段專門加熱基材。The several embodiments described herein relate to a deposition device for depositing a material on a substrate. The deposition equipment includes a conveying device configured to convey the substrate; one or more deposition units configured to deposit materials on the substrate; a deposition compartment including two or more edge regions; and a heating unit, Assembled so that a first substrate section and a second substrate section face the two or more edge regions of the deposition compartment, and the substrate is specifically heated in the first substrate section and the second substrate section .
根據此處所述之數個實施例,提出一種用以沈積一材料於一基材上之沈積設備。沈積設備可包括舉例為設置成一塗佈鼓之一傳送裝置。基材可由塗佈鼓引導,用以通過一沈積隔室。材料可在沈積隔室沈積於基材上。基材可包括一第一基材區段、一第二基材區段及一第三基材區段。沈積隔室可更包括二或多個邊緣區域。邊緣區域可面對傳送裝置。沈積設備可更包括一加熱單元。加熱單元可加熱第一基材區段及第二基材區端。According to several embodiments described herein, a deposition device for depositing a material on a substrate is provided. The deposition equipment may include, for example, a conveying device arranged as a coating drum. The substrate can be guided by the coating drum to pass through a deposition compartment. The material can be deposited on the substrate in the deposition compartment. The substrate may include a first substrate section, a second substrate section, and a third substrate section. The deposition compartment may further include two or more edge regions. The edge area can face the conveyor. The deposition equipment may further include a heating unit. The heating unit can heat the first substrate section and the end of the second substrate section.
根據再其他實施例,提出一種用以沈積一材料於一基材上之沈積設備。沈積設備可包括一傳送裝置,傳送裝置包括二個傳送裝置邊緣部。沈積設備可更包括一或多個沈積單元,包括一或多個沈積隔室,此一或多個沈積隔室包括二或多個沈積隔室邊緣區域。沈積設備可包括一加熱單元。由此二個傳送裝置邊緣部及此二或多個沈積隔室邊緣區域所組成之群組的至少一者係包括加熱單元。According to still other embodiments, a deposition device for depositing a material on a substrate is provided. The deposition equipment may include a conveying device, and the conveying device may include two edge portions of the conveying device. The deposition apparatus may further include one or more deposition units, including one or more deposition compartments, and the one or more deposition compartments include two or more deposition compartment edge regions. The deposition apparatus may include a heating unit. Thus, at least one of the group consisting of the two edge portions of the conveying device and the edge regions of the two or more deposition compartments includes a heating unit.
第1圖繪示依照此處所述數個實施例之用以沈積材料於基材上之系統的示意圖。系統包括沈積設備。沈積設備可包括真空腔室102及傳送裝置140,傳送裝置140用以傳送基材。沈積設備可包括一或多個沈積單元110。沈積單元可裝配以用於沈積材料於基材上。此一或多個沈積單元可配置,使得基材係傳送於傳送裝置140及此一或多個沈積單元110之間。Figure 1 shows a schematic diagram of a system for depositing materials on a substrate according to several embodiments described herein. The system includes deposition equipment. The deposition equipment may include a
根據此處所述之數個實施例,傳送裝置可沿著此一或多個沈積單元傳送基材。在此一或多個沈積單元之各者中,可包括輻射裝置。輻射裝置可裝配,以允許沈積材料於基材上。輻射裝置可包括冷卻裝置,如下進一步說明。沈積設備可包括一或多個供應通道。此一或多個供應通道可裝配,以用以提供材料至一或多個沈積單元。According to several embodiments described herein, the conveying device can convey the substrate along the one or more deposition units. In each of the one or more deposition units, a radiation device may be included. The radiation device can be equipped to allow the deposition of material on the substrate. The radiation device may include a cooling device, as described further below. The deposition apparatus may include one or more supply channels. The one or more supply channels can be equipped to provide materials to one or more deposition units.
根據此處所述之數個實施例,提出一種用於沈積材料於基材上的系統,舉例為用以沈積薄膜於基材上。此系統包括沈積設備。基材可為撓性基材。如第1圖中範例地繪示,此系統可包括真空腔室102。真空腔室具有第一腔室部102A及第二腔室部102B。第三腔室部102C可裝配成捲繞/退捲腔室,及可與用以交換撓性基材之此腔室的剩餘部分離,使得剩餘腔室部(舉例為第一/第二腔室部102A/B)不需為了移除已處理之撓性基材而抽氣及在新的基材已經插入後進行排氣。舉例來說,系統之停工時間可減少。系統可包括至少一沈積單元,特別是,沈積設備可包括多於兩個之沈積單元。系統也就是沈積設備。According to several embodiments described herein, a system for depositing materials on a substrate is proposed, for example, a system for depositing a thin film on the substrate. This system includes deposition equipment. The substrate may be a flexible substrate. As shown by way of example in Figure 1, the system may include a
值得注意的是,此處所述實施例所使用的撓性基材或網格一般可以它為可彎曲作為特徵。名稱「網格(web)」可同義於名稱「條(strip)」或名稱「撓性基材(flexible substrate)」使用。舉例來說,如此處實施例中所述之網格可為箔或另一撓性基材。然而,如下方之更詳細說明,此處所述之實施例的優點可亦提供給其他串連沈積系統(inline-deposition systems)之非撓性基材或載體。再者,將理解的是,特定的優點可使用於撓性基材及用以製造裝置於撓性基材上的應用。It is worth noting that the flexible substrate or mesh used in the embodiments described herein can generally be characterized as being bendable. The name "web" can be used synonymously with the name "strip" or the name "flexible substrate". For example, the mesh as described in the embodiments herein can be a foil or another flexible substrate. However, as described in more detail below, the advantages of the embodiments described herein can also be provided to the non-flexible substrates or carriers of other inline-deposition systems. Furthermore, it will be understood that specific advantages can be used for flexible substrates and applications for manufacturing devices on flexible substrates.
供應裝置可提供基材。供應裝置可為滾軸。基材可設置於具有軸之第一滾軸764上,此軸在第1圖中舉例為用以退捲。基材可由捲取裝置接收。捲取裝置可為滾軸。供應裝置及/或捲取裝置可為由支承裝置提供。基材可捲繞於具有軸之第二滾軸764’上,此軸在第1圖中舉例為用以捲繞。然而,將理解的是,基材可亦在相反方向中導引通過系統,使得軸可使用來捲繞而取代退捲,及用以退捲來取代捲繞。因此,退捲軸及捲繞軸係設置於第三腔室部102C中,退捲軸用以支撐將處理之撓性基材,捲繞軸支撐具有已處理之薄膜於其上之撓性基材。可為可彎曲之基材106可設置於舉例為具有退捲軸之第一滾軸764上。根據數個實施例,基材可從第一滾軸764經由一個、兩個或多個滾軸導引至塗佈鼓,及從塗佈鼓至舉例為具有捲繞軸的第二滾軸764’。基材係在其處理之後捲繞於捲繞軸上。The supply device can provide the substrate. The supply device may be a roller. The substrate can be arranged on a
根據數個實施例及如第1圖中所示,傳送裝置140可設置於設備中,傳送裝置140舉例為具有旋轉軸111之塗佈鼓142。塗佈鼓142可具有彎曲外表面,用以沿著彎曲外表面導引及/或傳送基材。基材可導引通過舉例為第1圖中之最上方之沈積單元110的第一真空處理區域,及第1圖中之次上方的沈積單元110之至少一第二真空處理區域。According to several embodiments and as shown in FIG. 1, the conveying
第1圖中所示之實施例包括五個沈積單元110,例如是五個沈積源。沈積源係設置在處理區域中,其中由塗佈鼓傳送之基材可在個別之區域中處理。然而,將理解的是,根據可與此處所述其他實施例結合之再其他實施例,可設置二或更多個沈積單元,沈積單元舉例為沈積站。舉例來說,可設置四個、五個、六個、或甚至是更多個沈積單元,沈積單元舉例為沈積站。處理區域可藉由氣體分離單元與相鄰之處理區域或其他區域分離。The embodiment shown in Figure 1 includes five
根據此處所述之數個實施例,塗佈鼓之第一部可設置於第二腔室部102B中,塗佈鼓之第一部也就是垂直於旋轉軸之塗佈鼓之剖面的一區域,及塗佈鼓之剩餘部可設置於第一腔室部102A中,塗佈鼓之剩餘部也就是垂直於旋轉軸之塗佈鼓之剖面的一區域。According to several embodiments described here, the first part of the coating drum can be disposed in the
根據此處所述之數個實施例,第一腔室部102A可具有凸形牆部。凸係理解為具有牆部之彎曲表面,或具有彼此相鄰之數個平面以提供凸形之此些表面。根據數個實施例,一起形成凸形之此些平面係具有優點,下述之真空凸緣連接件可設置在較易於製造的平面。According to several embodiments described herein, the
與第1圖中所示之此五個沈積單元110之其中兩者範例相關的是,第一沈積單元對應於第一真空處理區域及第二沈積單元對應於第二真空處理區域。根據此處所述之數個實施例,至少兩個沈積單元係設置,其中至少兩個沈積單元包括凸緣部,用以提供至第一腔室部102A之真空連接。舉例來說,第一腔室部可具有如上所述之凸形牆部,及至少兩個開孔本質上平行於其。舉例來說,此至少兩個開孔係提供於凸形牆部中或從凸形牆部延伸之突出部中,也就是相對於塗佈鼓軸本質上向外徑向突出之凸形牆部的延伸。Related to two examples of the five
根據數個實施例,此至少兩個沈積單元可裝配以容置於第一腔室部之此至少兩個開孔中。凸緣部可提供與第一腔室部之凸形牆部或與從凸形牆部延伸之突出部的真空緊密連接。然而,將理解的是,凸緣部可亦設置而用於如第1圖中所示之其他沈積單元。According to several embodiments, the at least two deposition units can be assembled to be accommodated in the at least two openings of the first chamber portion. The flange portion can provide a vacuum tight connection with the convex wall portion of the first chamber portion or with the protrusion extending from the convex wall portion. However, it will be understood that the flange portion may also be provided for other deposition units as shown in Figure 1.
因此,沈積單元可從第一腔室部102A之凸形牆部的外側插入。在插入期間,可連接真空凸緣。真空區域可提供於第一腔室部中。根據數個實施例,沈積單元可沿著相對於塗佈鼓142之軸的本質上徑向方向插入開孔中。Therefore, the deposition unit can be inserted from the outside of the convex wall portion of the
如上所述,沈積單元110之一部份可設置於真空中,也就是第一腔室部中及/或相對於凸緣之內側。沈積單元之另一部份可設置於此區域之外側,真空腔室102中之真空係提供於此區域中。沈積單元可輕易地交換,及像是冷卻流體、氣體、電力等消耗媒介之供應可輕易地提供。舉例來說,沈積單元至其他元件之連接係設置於第一腔室部102A之外側,及可形成區域之外側的上述另一部份。其他元件像是電源、氣體供應、幫浦裝置、真空幫浦及類似者。As described above, a part of the
如上所述,第1圖繪示出沈積設備105。沈積設備105可包括真空腔室102。真空腔室102可設置,使得真空可在腔室中產生。數種真空處理技術及特別是真空沈積技術可使用,以處理基材或沈積薄膜於基材上。如第1圖中所示,及參照此處,沈積設備105可為卷對卷沈積設備,支承所導引及處理之可為可彎曲的基材106。可為可彎曲之基材106可在第1圖中如箭頭8所指示之從第二腔室部102B導引至具有沈積單元於其中之第一腔室部102A。As described above, Figure 1 illustrates the
如上所述,根據數個實施例,真空腔室102可更包括第三腔室部102C。第三腔室部102C可裝配成捲繞/退捲腔室。真空腔室102可包括繞組,舉例為用以提供基材的滾軸。撓性基材可藉由滾軸導引至傳送裝置,舉例為裝配以用於在處理及/或沈積期間導引及/或傳送基材的塗佈鼓142。基材可在由箭頭8所指示之傳送方向中傳送。將理解的是,基材可亦在箭頭8所示之相反方向中傳送。來自塗佈鼓142之基材106可分別導引回到第二腔室部102B及第三腔室部。As described above, according to several embodiments, the
根據此處所述之數個實施例,第三腔室部可包括退捲器,用以供應基材。基材可接著經由滾軸朝向傳送裝置導引,傳送裝置舉例為塗佈鼓142。基材可經由塗佈鼓142之彎曲表面導引。塗佈鼓可沿著處理區域傳送基材,用以讓粒子沈積於基材上。基材可在塗佈鼓之彎曲表面及個別之沈積單元之間傳送。舉例來說,基材可導引通過塗佈鼓及沈積單元之間的狹縫。塗佈鼓142可經由滾軸傳送基材回到第三腔室部而至捲繞器,以接收已處理之基材。捲繞器及退捲器可為滾軸。捲繞器及/或退捲器可為可移除地配置於第三腔室部中。According to several embodiments described herein, the third chamber portion may include an unwinder for supplying the substrate. The substrate can then be guided toward a conveying device via a roller. The conveying device is, for example, a
根據如此處所述之用以操作及使用沈積設備之再其他實施例,可提供用於超高阻隔堆疊(ultra high barrier stacks)或可彎曲薄膜電晶體(TFT)裝置之沈積層或層堆疊。超高阻隔堆疊或可彎曲TFT裝置舉例為包括一系列之層,舉例為利用電漿輔助化學氣相沈積(PECVD)或物理氣相沈積(PVD)製程或其之組合沈積。因為對於不同層之品質的高需求,針對各單一膜而在特別設計的系統中沈積單一膜係為通常使用的方式。為了降低成本及讓應用商業化使用,在一個單一塗佈機中結合數個膜之至少數組或數個結合的沈積係為一種改善方式。根據此處所述之數個實施例,允許數種製程模組之結合的模組化概念係提供。有鑑於上述,根據此處所述之一些實施例,可提供用於有機發光二極體(OLED)顯示器及/或照明、柔性太陽能(flex solar)、或其他電子裝置之可彎曲超高阻隔,而伴隨避免相鄰環境之影響的需求。舉例來說,此可包括用於TFT之蝕刻終止、閘極介電、通道、源極及汲極之沈積。According to still other embodiments for operating and using deposition equipment as described herein, deposition layers or layer stacks for ultra high barrier stacks or flexible thin film transistor (TFT) devices can be provided. An example of an ultra-high barrier stacked or flexible TFT device includes a series of layers, for example, deposition using plasma assisted chemical vapor deposition (PECVD) or physical vapor deposition (PVD) processes or a combination thereof. Because of the high requirements for the quality of different layers, depositing a single film in a specially designed system for each single film is a commonly used method. In order to reduce the cost and allow the application to be used commercially, the deposition system of combining at least an array of several films or several combinations in a single coater is an improved method. According to the several embodiments described herein, a modular concept that allows the combination of several process modules is provided. In view of the above, according to some embodiments described herein, flexible ultra-high barriers for organic light emitting diode (OLED) displays and/or lighting, flex solar, or other electronic devices can be provided, And with the need to avoid the influence of the adjacent environment. For example, this can include etch stop, gate dielectric, channel, source and drain deposition for TFT.
更如第1圖中所示,第二腔室部102B可相對於第三腔室部之垂直或水平定向傾斜(未繪示)。傾斜之角度可為相對於垂直20°至70°。傾斜可使得塗佈鼓相較於無傾斜之類似元件之水平配置向下位移。第二腔室部102B之傾斜允許額外之沈積單元的設置,使得舉例為沈積單元之對稱軸之軸(見第1圖中之以1標註之線)係在塗佈鼓142之軸之上方或下方的相同高度。如第1圖中所示,此五個沈積單元係設置在塗佈鼓之旋轉軸之高度的上方或在塗佈鼓之旋轉軸的高度處或下方。可減少或避免所產生的粒子在基材上的碎片及掉落。As more shown in Figure 1, the
第2圖繪示依照此處所述數個實施例之沈積單元的剖面圖。沈積單元110可包括殼體112。沈積單元110可包括內部遮蔽物,舉例為幫浦遮蔽物。內部遮蔽物可內襯(line)於殼體,用以限制沈積腔室於殼體中。沈積單元更可包括沈積開孔126。沈積開孔126可於舉例為在內部遮蔽物中延伸。也就是說,沈積開孔126可具有相同於沈積腔室的尺寸。根據數個實施例,沈積開孔可窄於沈積腔室的尺寸。Figure 2 shows a cross-sectional view of a deposition unit according to several embodiments described herein. The
根據此處所述之數個實施例,沈積單元可包括溫度調節器118。溫度調節器118可裝配,以冷卻沈積單元,也就是冷卻沈積單元的殼體112。溫度調節器118可更裝配,以冷卻內部遮蔽物。舉例來說,冷卻通道可包括於殼體112中。冷卻流體可傳送通過冷卻通道,用以致使在沈積腔室及冷卻流體之間的熱傳送。According to several embodiments described herein, the deposition unit may include a
沈積單元可包括一或多個供應通道130。此一或多個供應通道可包括一或多個氣體供應線。特別是,沈積單元可包括兩個供應通道130。沈積單元可包括輻射裝置200。The deposition unit may include one or
根據此處所述之數個實施例,此一或多個供應通道130可配置在沈積單元之上區段。此一或多個供應通道可流體連通於供應配置,供應配置舉例為氣體槽。舉例來說,當設置兩個氣體供應線時,一個氣體供應線可流體連通於一個供應配置,及第二個氣體供應線可流體連通於第二個供應配置。如第2圖中所示,此一或多個供應通道可配置於沈積單元之相同水平面中。According to several embodiments described herein, the one or
此一或多個供應通道130可在垂直於第2圖之紙面的方向中延伸。沿著此一或多個供應通道130,數個開孔可配置,以讓材料進入沈積單元,也就是沈積腔室。開孔可提供舉例為氣體至沈積腔室。開孔可設置成噴嘴。The one or
根據此處所述之數個實施例,沈積單元可包括輻射裝置200。輻射裝置可配置在中心位置,舉例為在沈積單元110之下區段。舉例來說,輻射裝置可配置在兩個供應通道之間。輻射裝置可配置在不同於供應通道之平面的平面中。舉例來說,輻射裝置之平面可在垂直方向中低於供應通道之平面。輻射裝置可額外地或替代地配置,使得輻射能量可於此一或多個供應通道的方向中提供。According to several embodiments described herein, the deposition unit may include a
根據此處所述之數個實施例,傳送裝置140可配置在沈積單元之上區段。將理解的是,名稱「上」及「下」與第2圖中所示之沈積單元的定向相關。沈積單元可配置在有關於第1圖所示之傳送裝置的不同角度處。傳送裝置140可提供基材於沈積開孔126處。舉例來說,傳送裝置的移動可沿著沈積開孔126提供基材。傳送裝置之移動可以固定速度提供基材,或傳送裝置之移動可開始及停止數次。傳送裝置可為塗佈鼓142。According to the several embodiments described here, the conveying
根據此處所述之數個實施例,沈積單元可包括氣體分離單元122。氣體分離單元可裝配,以用以分離第一真空處理區域及至少一第二真空處理區域,及可適用以形成一狹縫。基材經由此狹縫可通過基材支撐件之外表面及氣體分離單元之間。氣體分離單元可適用以控制第一真空處理區域及第二真空處理區域之間的流體連通。流體連通可藉由調整氣體分離單元之位置來控制,此位置舉例為徑向位置。According to several embodiments described herein, the deposition unit may include a
根據可與此處所述其他實施例結合之不同實施例,用以提供徑向位置之氣體分離單元122的致動器可選自由電動馬達、例如是氣壓缸之氣壓致動器、線性驅動器、及例如是油壓缸之液壓致動器所組成之群組。According to different embodiments that can be combined with other embodiments described herein, the actuator of the
根據此處所述之數個實施例,沈積開孔126可允許材料到達基材。也就是說,沈積開孔可允許材料沈積於傳送裝置所傳送之基材上。According to several embodiments described herein, the
根據此處所述之數個實施例,可執行數個沈積製程。此處所使用之名稱「沈積」可理解為提供(固態)粒子傳送於基材上的任何製程。舉例來說,將沈積之材料可濺射於基材上。材料係為從靶材釋放(舉例為結合產生電漿)及沈積於基材上。一般來說,濺射係有關於超高熱能量之產生。再者,將沈積之材料可藉由提供高溫至個別之材料來蒸發,以轉換材料成氣態。已蒸發之粒子可接著置於(較冷之)基材上。無論濺射製程或蒸發製程執行與否,大量之熱能係在製程期間產生。具有通常知識者可理解,在沈積設備中執行之製程係不限於濺射及蒸發,但可亦包括用以沈積材料於基材上之其他沈積製程。According to the several embodiments described herein, several deposition processes can be performed. The name "deposition" used here can be understood as any process that provides (solid) particles transported on a substrate. For example, the deposited material can be sputtered on the substrate. The material is released from the target (for example, combined to generate plasma) and deposited on the substrate. Generally speaking, sputtering is related to the generation of ultra-high thermal energy. Furthermore, the deposited material can be evaporated by providing a high temperature to the individual material to convert the material into a gaseous state. The evaporated particles can then be placed on the (cooler) substrate. Regardless of whether the sputtering process or the evaporation process is performed or not, a large amount of heat energy is generated during the process. Those with ordinary knowledge can understand that the processes performed in the deposition equipment are not limited to sputtering and evaporation, but may also include other deposition processes for depositing materials on the substrate.
根據此處所述之數個實施例,沈積單元可為反應腔室。真空可供應於沈積單元。反應腔室可致使電漿輔助化學氣相沈積(PECVD)製程、化學氣相沈積(CVD)製程、物理氣相沈積(PVD)製程或其之組合。舉例來說,化學反應可在沈積單元或沈積腔室中發生。供應通道可導引氣體至沈積腔室中,特別是反應氣體。舉例來說,可提供兩種不同形式之氣體。化學反應可發生而產生粒子之沈積於基材上。舉例來說,可提供支持氣體(support gas)及原料氣體(feedstock gas)。According to several embodiments described herein, the deposition unit may be a reaction chamber. Vacuum can be supplied to the deposition unit. The reaction chamber can cause a plasma assisted chemical vapor deposition (PECVD) process, a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, or a combination thereof. For example, the chemical reaction can occur in the deposition unit or the deposition chamber. The supply channel can guide gas into the deposition chamber, especially reaction gas. For example, two different forms of gas can be provided. A chemical reaction can occur to produce the deposition of particles on the substrate. For example, support gas and feedstock gas can be provided.
第3圖繪示根據此處所述之數個實施例之沈積單元的上視圖。沈積單元可包括沈積隔室120。沈積隔室可包括二或多個邊緣區域124。此二或多個邊緣區域124可視為沈積隔室之上側限制,也就是沈積腔室的上側限制。此一或多個邊緣區域可形成 圍繞沈積腔室的框架。舉例來說,此二或多個邊緣區域124可配置在沈積隔室之短邊。Figure 3 shows a top view of a deposition unit according to several embodiments described herein. The deposition unit may include a
根據此處所述之數個實施例,此一或多個邊緣區域可由沈積隔室之尺寸定義。考慮二維形狀來說,沈積隔室可具有實質上矩形之形狀。沈積隔室可具有兩個平行長邊及兩個平行短邊。因此,相較於短邊,長邊可延長。此二或多個邊緣區域可配置在沈積隔室的長邊及/或短邊。According to several embodiments described herein, the one or more edge regions can be defined by the size of the deposition compartment. Considering the two-dimensional shape, the deposition compartment may have a substantially rectangular shape. The deposition compartment may have two parallel long sides and two parallel short sides. Therefore, the long side can be extended compared to the short side. The two or more edge regions may be arranged on the long side and/or short side of the deposition compartment.
如第3圖中範例地繪示,沈積隔室可包括一或多個供應通道130及選擇地包括輻射裝置200。沈積隔室可包括至少兩個邊緣區域124,特別是沈積隔室可包括四個邊緣區域124。As exemplarily shown in FIG. 3, the deposition compartment may include one or
根據此處所述之實施例,沈積設備可包括加熱單元300。加熱單元300可配置在沈積隔室,舉例為配置在第3圖中所示之此二或多個邊緣區域124處。加熱單元300可裝配而用於在第一基材區段及第二基材區段面對沈積隔室之此二或多個邊緣區域124之情況下,在第一基材區段及第二基材區段專門加熱基材。According to the embodiment described here, the deposition apparatus may include a
此處所使用之名稱「專門加熱」可理解為基材之區段之直接加熱。特別是,此名稱可理解為第一基材區段及/或第二基材區段之直接加熱。加熱單元可裝配而使得熱可到達第一基材區段及/或第二基材區段,而不到達第三基材區段。然而,加熱單元所提供之部份的熱可能傳送至第三基材區段,傳送之熱與所提供之熱的20%一樣少,特別是與所提供之熱的10%一般少,更特別是與所提供之熱的5%一般少。The name "special heating" used here can be understood as direct heating of a section of the substrate. In particular, this name can be understood as direct heating of the first substrate section and/or the second substrate section. The heating unit may be equipped so that heat can reach the first substrate section and/or the second substrate section, but not the third substrate section. However, part of the heat provided by the heating unit may be transferred to the third substrate section. The transferred heat is as little as 20% of the provided heat, especially as little as 10% of the provided heat, and more special It is generally less than 5% of the heat provided.
根據此處所述之數個實施例,加熱單元300可配置在此二或多個邊緣區域124。加熱單元可設置在沈積隔室之此二或多個邊緣區域的至少一者處。更特別是,加熱單元可設置在此二或多個邊緣區域之此二者處。加熱單元可設置在沈積隔室之短邊處。舉例來說,加熱單元可貼附於此二或多個邊緣區域。According to the several embodiments described herein, the
根據此處所述之數個實施例,加熱單元可包括一或多個加熱裝置325。此一或多個加熱裝置325可配置而對應於此二或多個邊緣區域。特別是,此二或多個邊緣區域之各者可包括此一或多個加熱裝置325之其中一者。更特別是,在沈積隔室之長邊上之此二或多個邊緣區域可各包括一個加熱裝置。多於一個加熱裝置可額外地或替代地配置在此二或多個邊緣區域。此一或多個加熱裝置可選自由陶瓷嵌體、輻射加熱器、電阻加熱器或其組合所組成之群組。According to several embodiments described herein, the heating unit may include one or
根據此處所述之數個實施例,加熱單元可裝配,以局部地加熱基材106。舉例來說,加熱單元可裝配,使得基材之一部份係進行加熱。加熱單元也就是此一或多個加熱裝置。此部份可配置而對應於此二或多個邊緣區域。基材之此部份可為一基材區段。According to several embodiments described herein, a heating unit can be equipped to locally heat the
基材可視為包括數個基材區段。特別是,基材106可包括三個基材區段。基材可包括第一基材區段107、第二基材區段108及/或第三基材區段109。本實施例可提供僅加熱基材之特定區段的可能性。The substrate can be regarded as including several substrate segments. In particular, the
舉例來說,加熱單元可裝配以藉由熱輻射加熱基材及/或基材區段,加熱單元也就是此一或多個加熱裝置。藉由調整加熱單元之溫度至特定值,基材及/或基材區段的溫度可調整。For example, the heating unit can be equipped to heat the substrate and/or the substrate section by thermal radiation, and the heating unit is the one or more heating devices. By adjusting the temperature of the heating unit to a specific value, the temperature of the substrate and/or the substrate section can be adjusted.
第4A圖繪示依照此處所述數個實施例之沈積設備的前視圖。傳送裝置140可配置而對應於沈積隔室120。傳送裝置可為塗佈鼓142。基材106可藉由傳送裝置導引,傳送裝置也就是塗佈鼓。傳送裝置可配置,使得將沈積之材料可到達基材106,傳送裝置也就是塗佈鼓。如第4A圖中所範例地繪示,傳送裝置可配置在沈積隔室之上方。將理解的是,方向「沈積隔室之上方」與第4A圖中之圖式相關,但可亦解理為傳送裝置及沈積隔室彼此相鄰配置。Figure 4A shows a front view of a deposition apparatus according to several embodiments described herein. The conveying
根據此處所述之數個實施例,傳送裝置140之尺寸可超過沈積開孔126的尺寸。傳送裝置可導引基材106。基材106可沿著平行於傳送裝置之旋轉軸111的傳送裝置延伸。因此,基材106的尺寸可超過沈積開孔的尺寸。沈積隔室之沈積開孔126可配置,使得基材之區段接收將沈積之材料。According to several embodiments described herein, the size of the conveying
根據此處所述之數個實施例,基材106可包括一或多個基材區段。特別是,基材106可包括三個基材區段。基材可包括第一基材區段107、第二基材區段108及/或第三基材區段109。第一基材區段107及第二基材區段108可定義成遠離將沈積之材料之基材的部份。舉例來說,第一基材區段107及第二基材區段108可配置而對應於沈積隔室120之此二或多個邊緣區域。也就是說,第一基材區段及第二基材區段可為超過沈積開孔之尺寸的基材之部份。第三基材區段可由配置而對應於沈積開孔之基材的部份所定義。也就是說,第三基材區段係為接收將沈積之材料的基材之部份。第三基材區段109可配置在第一基材區段107及第二基材區段108之間。According to several embodiments described herein, the
根據此處所述之數個實施例,傳送裝置140可包括兩個傳送裝置邊緣部144。傳送裝置邊緣部144可配置於傳送裝置140之側邊界,舉例為在塗佈鼓142之側邊界。舉例來說,第一傳送裝置邊緣部可配置而對應於第一基材區段107。第二傳送裝置邊緣部可配置而對應於第二基材區段108。第一傳送裝置邊緣部及第二傳送裝置邊緣部可配置而對應於沈積隔室120之此二或多個邊緣區域。也就是說,第一傳送裝置邊緣部及第二傳送裝置邊緣部可為超過沈積開孔之尺寸的傳送裝置之部份。According to several embodiments described herein, the conveying
根據可與此處所述任何其他實施例結合之數個實施例,加熱單元300可設置而相鄰於第一基材區段107及/或第二基材區段108。舉例來說,加熱單元300可設置於傳送裝置之對應於第一基材區段及/或第二基材區段之數個區域中。加熱單元300可包括一或多個加熱裝置。加熱單元可裝配以加熱基材106。特別是,加熱單元可裝配以加熱第一基材區段107及/或第二基材區段108。舉例來說,加熱單元可包括一或多個加熱裝置,舉例為電阻加熱器。According to several embodiments that can be combined with any other embodiments described herein, the
根據此處所述之數個實施例,加熱單元可設置於傳送裝置140。舉例來說,加熱單元可配置在塗佈鼓142中。加熱裝置可配置,使得第一基材區段107及/或第二基材區段108專門接收來自加熱單元之熱,加熱單元也就是此一或多個加熱裝置。舉例來說,此一或多個加熱裝置可放置在對應於第一基材區段107及/或第二基材區段108的塗佈鼓之區段。According to several embodiments described herein, the heating unit may be provided in the conveying
舉例來說,加熱單元可設置於此二個傳送裝置邊緣部144,也就是加熱單元可設置於第一傳送裝置邊緣部及/或第二傳送裝置邊緣部。此二個傳送裝置邊緣部可從加熱單元傳送熱至傳送裝置所所傳送之基材。舉例來說,第一傳送裝置邊緣區域可傳送來自加熱單元之熱至第一基材區段,及/或第二傳送裝置邊緣區域可傳送來自加熱單元之熱至第二基材區段。因此,藉由加熱單元,第一基材區段及/或第二基材區段可經由第一傳送裝置邊緣部及/或第二傳送裝置邊緣部專門加熱。For example, the heating unit can be disposed at the
加熱單元係有利地裝配,以補償在基材之溫差。溫差可能因供應至沈積製程之較高溫度產生。藉由配置而對應於沈積開孔,第三基材區段可能接收最高的製程溫度。第一基材區段及/或第二基材區段可能接收較少之製程溫度,因為第一基板區段及第二基材區段係沒有與沈積開孔直接接觸。也就是說,相較於第三基材區段,當沒有熱提供給第一基材區段及/或第二基材區段時,第一基材區段及第二基材區段係在沈積製程期間保持較涼的情況。The heating unit is advantageously equipped to compensate for the temperature difference in the substrate. The temperature difference may be caused by the higher temperature supplied to the deposition process. By configuring to correspond to the deposition openings, the third substrate section may receive the highest process temperature. The first substrate section and/or the second substrate section may receive less process temperature because the first substrate section and the second substrate section are not in direct contact with the deposition opening. That is, compared to the third substrate section, when no heat is provided to the first substrate section and/or the second substrate section, the first substrate section and the second substrate section are Keep cooler conditions during the deposition process.
利用加熱單元加熱第一基材區段及第二基材區段可更有利地致使在基材的溫度之均勻分佈。溫差可能損害基材,舉例為可能產生折疊及/或皺摺,特別是在基材之側邊上產生折疊及/或皺摺。加熱第一基材區段及第二基材區段可防止或避免折疊及/或皺摺形成在基材上。因此,可確保將沈積之材料均勻分佈。再者,利用傳送裝置導引基材可為有助益,因為折疊及/或皺摺之避免係防止基材在沈積設備中卡住。The heating of the first substrate section and the second substrate section by the heating unit can more advantageously lead to a uniform temperature distribution on the substrate. The temperature difference may damage the substrate, for example, folds and/or wrinkles may occur, especially on the sides of the substrate. Heating the first substrate section and the second substrate section can prevent or avoid the formation of folds and/or wrinkles on the substrate. Therefore, it can be ensured that the deposited material is evenly distributed. Furthermore, the use of a conveyor to guide the substrate can be helpful, because the avoidance of folding and/or wrinkles prevents the substrate from jamming in the deposition equipment.
第4B圖繪示依照此處所述數個實施例之沈積設備的前視圖。如第4B圖中所示,傳送裝置可包括冷卻設備450。冷卻設備450可配置在傳送裝置中,也就是塗佈鼓142中。冷卻設備450可裝配,以冷卻基材。特別是,冷卻設備可配置,使得第三基材區段109可冷卻。第三基材區段可配置而對應於沈積開孔126。Figure 4B shows a front view of a deposition apparatus according to several embodiments described herein. As shown in Figure 4B, the conveying device may include a cooling device 450. The cooling device 450 may be arranged in the conveying device, that is, in the
根據此處所述之數個實施例,冷卻設備450可設置於此兩個傳送裝置邊緣部144之間。舉例來說,冷卻設備可配置於在此兩個傳送裝置邊緣部144之間的傳送裝置之一部份處。冷卻設備450可裝配以冷卻基材區段,此基材區段配置而對應於位在此兩個傳送裝置邊緣部144之間的傳送裝置之部份。因此,傳送裝置可包括加熱單元及冷卻設備,加熱單元係位在此兩個傳送裝置邊緣部,冷卻設備位在此兩個傳送裝置邊緣部之間的傳送裝置部。According to several embodiments described herein, the cooling device 450 may be disposed between the
根據此處所述之數個實施例,第三基材區段109可提供有第一溫度。第一基材區段107及第二基材區段108可提供有第二溫度。也就是說,第一基材區段及第二基材區段可包括一溫度,及第三基材區段109可包括另一溫度。藉由提供不同溫度至第一、第二及第三基材區段,可產生基材的第三溫度。第三溫度可理解為從第一溫度及第二溫度產生之基材的均勻溫度。也就是說,第三溫度可理解為均勻地分散在基材上的溫度。此技術領域中具有通常知識者將理解,第一溫度及第二溫度可亦相等。According to several embodiments described herein, the
根據此處所述之數個實施例,冷卻設備可裝配,以提供一溫度至基材106。特別是,冷卻設備可提供第一溫度至第三基材區段109。冷卻第三基材區段可為有利的,因為第三基材區段可能接收沈積製程所產生的熱。舉例來說,電力係供應至用以執行沈積製程的沈積隔室,能量因而提供至沈積設備,而可能在製程期間產生熱。再者,將沈積之材料可能於較高之溫度提供來用以確保粒子之高品質沈積。藉由冷卻基材,也以就是冷卻接收將沈積之材料之基材之部份的第三基材區段,此些高溫可補償。According to several embodiments described herein, the cooling device can be equipped to provide a temperature to the
根據此處所述之數個實施例,冷卻設備450可包括冷卻通道。冷卻通道可為冷卻管。冷卻管可提供有冷卻流體。藉由提供冷卻流體至冷卻管,從傳送裝置及/或基材至冷卻管之熱傳送可執行,也就是從傳送裝置及/或基材至冷卻流體之熱傳送可執行。冷卻流體可提供有低於製程溫度之一溫度。沈積設備可包括控制器,用以控制冷卻設備之溫度。According to several embodiments described herein, the cooling device 450 may include cooling channels. The cooling channel may be a cooling pipe. The cooling pipe may be provided with cooling fluid. By providing the cooling fluid to the cooling pipe, heat transfer from the conveying device and/or the substrate to the cooling pipe can be performed, that is, heat transfer from the conveying device and/or the substrate to the cooling fluid can be performed. The cooling fluid may be provided at a temperature lower than the process temperature. The deposition equipment may include a controller for controlling the temperature of the cooling equipment.
根據此處所述之數個實施例,加熱單元可裝配,以加熱第一基材區段及第二基材區段至一溫度,此溫度係實質上等同於第三基材區段的溫度。特別是,冷卻設備可裝配以冷卻第三基材區段至第一溫度,及加熱單元可裝配以加熱第一基材區段及第二基材區段至第二溫度,使得第一基材區段及第二基材區段具有相同於第三基材區段之溫度。也就是說,第一溫度及第二溫度可同步來於基材上產生均勻分佈的溫度。According to several embodiments described herein, the heating unit can be equipped to heat the first substrate section and the second substrate section to a temperature that is substantially equal to the temperature of the third substrate section . In particular, the cooling device can be equipped to cool the third substrate section to a first temperature, and the heating unit can be equipped to heat the first substrate section and the second substrate section to the second temperature, so that the first substrate The section and the second substrate section have the same temperature as the third substrate section. In other words, the first temperature and the second temperature can be synchronized to generate a uniform temperature distribution on the substrate.
基材之溫度可有利地精密調整。藉由調節基材之不同部份或區段的溫度,基材之整體溫度可更準確及更精準調整。此係在最小化負面影響的情況下,提供沈積製程之改善調整。The temperature of the substrate can be advantageously adjusted precisely. By adjusting the temperature of different parts or sections of the substrate, the overall temperature of the substrate can be adjusted more accurately and precisely. This is to provide improved adjustment of the deposition process while minimizing the negative impact.
第5圖依照此處所述數個實施例之輻射裝置的側視圖。沈積設備可包括輻射裝置200。輻射裝置200可具有軸2。輻射裝置200可包括中空主體250。中空主體250可沿著軸2在輻射裝置之長度方向中延伸。輻射裝置可包括圓柱形狀。沿著軸2之輻射裝置之長度可適用於沈積單元的尺寸。輻射裝置可連接於電源,舉例為中空主體可連接於電源。輻射裝置可包括同軸式連接器。Figure 5 is a side view of the radiation device according to several embodiments described herein. The deposition equipment may include a
輻射裝置可包括外管255。外管圍繞中空主體250。外管255可沿著輻射裝置之軸2延伸。沿著軸2之外管255的長度可類似於中空主體之長度。外管可裝配成真空隔離。外管可為石英管。石英係為材料選擇,以讓輻射波通過外管,輻射波也就是微波,而不被吸收或僅有少數微波被吸收。The radiation device may include an
輻射裝置可包括冷卻裝置246。冷卻裝置246可配置在中空主體250中。冷卻裝置可在沿著輻射裝置之軸2的長度方向中延伸。冷卻裝置可內襯於中空主體250之內部區域。冷卻裝置係裝配,以冷卻中空主體。冷卻中空主體可包括在中空主體及冷卻裝置之間的熱傳送。The radiation device may include a
根據此處所述之數個實施例,冷卻裝置246可包括一或多個冷卻通道,用以導引冷卻流體通過。冷卻通道可包括進入流體埠242及離開流體埠244。進入流體埠242可配置於輻射裝置之一端區域上,及離開流體埠244可配置於輻射裝置之第二個端區域上。冷卻流體可通過進入流體埠進入冷卻裝置。冷卻流體可通過離開流體埠離開冷卻裝置。冷卻流體可提供輻射裝置及冷卻流體之間的熱交換。藉由流經冷卻通道,冷卻流體可傳送輻射裝置所產生之熱離開輻射裝置。According to several embodiments described herein, the
中空主體250可包括導體。導體可在第一電力埠及/或第二電力埠提供有電力。導體可以銅(copper (Cu))製成或可以適用於提供輻射能量之應用的任何其他金屬製成。電源可提供能量到導體。高頻率輻射波可於導體產生。舉例來說,微波係產生。輻射波可在輻射裝置之周圍產生電漿。The
舉例來說,能量係提供至導體。導體因提供之能量而變熱,能量增加輻射裝置之溫度。此可能致使沈積單元之溫度增加,也就是沈積腔室的溫度增加。溫度之增加可能不僅影響沈積製程,也可能損害包含於沈積製程中的元件,舉例為導體。For example, energy is provided to the conductor. The conductor heats up due to the energy provided, and the energy increases the temperature of the radiation device. This may increase the temperature of the deposition unit, that is, the temperature of the deposition chamber. The increase in temperature may not only affect the deposition process, but may also damage the components included in the deposition process, such as conductors.
一般來說,藉由提供輻射能量,輻射裝置產生熱至沈積製程,輻射裝置也就是微波天線。冷卻裝置可有利地冷卻微波天線。因此,可調節在沈積腔室之內側的溫度。再者,冷卻裝置抵消微波天線所產生的熱。基材之損害及/或變化可避免。舉例來說,可避免及/或防止基材之折疊。此係提供於基材上之粒子的更均勻沈積。再者,可防止及/或避免反應物之損害。再者,藉由冷卻輻射裝置,可增加產生於輻射裝置之電漿的均勻性。輻射裝置及/或導體可更有利地避免因過熱而損害。Generally speaking, by providing radiation energy, the radiation device generates heat to the deposition process, and the radiation device is also a microwave antenna. The cooling device can advantageously cool the microwave antenna. Therefore, the temperature inside the deposition chamber can be adjusted. Furthermore, the cooling device cancels the heat generated by the microwave antenna. Damage and/or changes to the substrate can be avoided. For example, the folding of the substrate can be avoided and/or prevented. This provides more uniform deposition of particles on the substrate. Furthermore, damage to the reactants can be prevented and/or avoided. Furthermore, by cooling the radiation device, the uniformity of the plasma generated in the radiation device can be increased. The radiation device and/or the conductor can more advantageously avoid damage due to overheating.
根據此處所述之數個實施例,冷卻輻射裝置及加熱第一基材區段及第二基材區段可結合。舉例來說,輻射裝置可冷卻以調整沈積隔室中之製程溫度,及第一基材區段及第二基材區段可加熱以更減少高製程溫度之負面影響。協同正面效應(Synergistic positive effects)可提供至沈積設備及/或沈積製程。According to several embodiments described herein, the cooling radiation device and the heating of the first substrate section and the second substrate section can be combined. For example, the radiation device can be cooled to adjust the process temperature in the deposition chamber, and the first substrate section and the second substrate section can be heated to further reduce the negative effects of high process temperatures. Synergistic positive effects can be provided to deposition equipment and/or deposition processes.
沈積設備之協調性熱管理可有利地提供。首先,舉例為沈積隔室中之溫度的製程溫度可調節,使得溫度夠高來用於沈積製程以沒有干擾的運作,而同時溫度夠低來避免損害製程元件。其次,基材之溫度可精細地調整來進一步避免損害,而減少或甚至避免不良品,及因而降低生產成本。輻射裝置之溫度調節及也就是第一基材區段及第二基材區段的基材之溫度調節的結合可更提供也就是上述之第三溫度之基材溫度之甚至更精準及更準確的精密調節。沈積製程可改善及可更有效率地製造。Coordinated thermal management of the deposition equipment can be advantageously provided. First, the process temperature, for example the temperature in the deposition compartment, can be adjusted so that the temperature is high enough for the deposition process to operate without interference, and at the same time the temperature is low enough to avoid damage to the process components. Secondly, the temperature of the substrate can be finely adjusted to further avoid damage, reduce or even avoid defective products, and thus reduce production costs. The combination of the temperature adjustment of the radiation device and the temperature adjustment of the substrate of the first substrate section and the second substrate section can provide even more precise and accurate substrate temperature which is the third temperature mentioned above The precision adjustment. The deposition process can be improved and can be manufactured more efficiently.
根據可與此處所述任何其他實施例結合之數個實施例,沈積設備可包括控制器。控制器可裝配,以調節沈積設備之溫度。舉例來說,控制器係裝配,以調節輻射裝置的溫度、調節氣體冷卻裝置之溫度、及/或調節加熱單元之溫度。控制器可舉例為設定成不同溫度值,以分別提供溫度至輻射裝置、氣體冷卻裝置及加熱單元。According to several embodiments that can be combined with any of the other embodiments described herein, the deposition apparatus may include a controller. The controller can be equipped to adjust the temperature of the deposition equipment. For example, the controller is equipped to adjust the temperature of the radiation device, adjust the temperature of the gas cooling device, and/or adjust the temperature of the heating unit. The controller can be set to different temperature values for example to provide temperature to the radiation device, gas cooling device and heating unit respectively.
第6圖繪示依照此處所述數個實施例之用以沈積材料於基材上之方法600的流程圖。沈積設備包括一或多個沈積單元及沈積隔室。方塊660包括利用加熱單元專門加熱傳送裝置所傳送之第一基材區段及第二基材區段,第一基材區段及第二基材區段係面對沈積隔室之二或多的邊緣區域。FIG. 6 shows a flowchart of a
根據此處所述之數個實施例,傳送裝置可包括冷卻設備。在方塊670中,第一溫度係提供於冷卻設備,以冷卻第三基材區段。舉例來說,第三基材區段可配置於第一基材區段及第二基材區段之間。冷卻設備可舉例為參照第4B圖所說明之冷卻設備。According to several embodiments described herein, the conveying device may include cooling equipment. In
在方塊680中,第二溫度係提供於加熱單元,以專門加熱第一基材區段及第二基材區段。第二溫度可調整,使得第一基材區段及第二基材區段可具有一溫度,此溫度係等同於第三基材區段之溫度。In
在方塊690中,第一溫度及第二溫度可結合成第三溫度,第三溫度係均勻地分散於第一基材區段、第二基材區段及第三基材區段。因此,基材可避免折疊及/或皺摺。此方法可更包括調節第一溫度及第二溫度至0至200°C之間的範圍中的值,特別是20至160°C之間的範圍中的值。綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。In
1,2:軸
8:箭頭
102:真空腔室
102A:第一腔室部
102B:第二腔室部
102C:第三腔室部
105:沈積設備
106:基材
107:第一基材區段
108:第二基材區段
109:第三基材區段
110:沈積單元
111:旋轉軸
112:殼體
118:溫度調節器
120:沈積隔室
122:氣體分離單元
124:邊緣區域
126:沈積開孔
130:供應通道
140:傳送裝置
142:塗佈鼓
144:傳送裝置邊緣部
200:輻射裝置
242:進入流體埠
244:離開流體埠
246:冷卻裝置
250:中空主體
255:外管
300:加熱單元
325:加熱裝置
450:冷卻設備
600:方法
660,670,680,690:方塊
764:第一滾軸
764’:第二滾軸1,2: axis
8: Arrow
102:
為了使本發明的上述特徵可詳細地瞭解,簡要摘錄於上之本發明之更特有之說明可參照數個實施例。所附之圖式係有關於本發明之數個實施例且係說明於下方: 第1圖繪示依照此處所述數個實施例之用以沈積或塗佈薄膜之卷對卷沈積系統的上視圖; 第2圖繪示依照此處所述數個實施例的沈積單元之剖面圖; 第3圖繪示依照此處所述數個實施例之沈積單元的上視圖; 第4A圖繪示依照此處所述數個實施例之沈積設備的前視圖; 第4B圖繪示依照此處所述數個實施例之沈積設備的前視圖; 第5圖繪示依照此處所述數個實施例之輻射裝置的側視圖;以及 第6圖繪示依照此處所述數個實施例之方法的流程圖。In order to make the above features of the present invention be understood in detail, the more specific description of the present invention briefly excerpted above can refer to several embodiments. The attached drawings are related to several embodiments of the present invention and are described below: Figure 1 shows a top view of a roll-to-roll deposition system for depositing or coating films according to several embodiments described herein; Figure 2 shows a cross-sectional view of a deposition unit according to several embodiments described herein; Figure 3 shows a top view of a deposition unit according to several embodiments described herein; Figure 4A shows a front view of a deposition apparatus according to several embodiments described herein; Figure 4B shows a front view of the deposition apparatus according to several embodiments described herein; Figure 5 shows a side view of the radiation device according to several embodiments described herein; and Figure 6 shows a flow chart of the method according to several embodiments described herein.
120:沈積隔室 120: deposition compartment
124:邊緣區域 124: edge area
130:供應通道 130: supply channel
200:輻射裝置 200: Radiation device
300:加熱單元 300: heating unit
325:加熱裝置 325: heating device
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2018/078598 WO2020078557A1 (en) | 2018-10-18 | 2018-10-18 | Deposition apparatus, system and method for depositing a material on a substrate |
WOPCT/EP2018/078598 | 2018-10-18 |
Publications (1)
Publication Number | Publication Date |
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TW202032627A true TW202032627A (en) | 2020-09-01 |
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Family Applications (1)
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TW108137409A TW202032627A (en) | 2018-10-18 | 2019-10-17 | Deposition apparatus for depositing a material on a substrate and method for depositing a material on a substrate with a deposition apparatus |
Country Status (2)
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TW (1) | TW202032627A (en) |
WO (1) | WO2020078557A1 (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4470369A (en) * | 1982-07-12 | 1984-09-11 | Energy Conversion Devices, Inc. | Apparatus for uniformly heating a substrate |
US4515107A (en) * | 1982-11-12 | 1985-05-07 | Sovonics Solar Systems | Apparatus for the manufacture of photovoltaic devices |
JPH0247262A (en) * | 1988-08-10 | 1990-02-16 | Matsushita Electric Ind Co Ltd | Thin film formation |
JPH06116728A (en) * | 1992-10-02 | 1994-04-26 | Kobe Steel Ltd | Vacuum deposition plating method and vacuum deposition plating equipment |
EP2862956B1 (en) * | 2013-10-18 | 2022-07-20 | Applied Materials, Inc. | Roller device for vacuum deposition arrangement, vacuum deposition arrangement with roller and method for operating a roller |
-
2018
- 2018-10-18 WO PCT/EP2018/078598 patent/WO2020078557A1/en active Application Filing
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2019
- 2019-10-17 TW TW108137409A patent/TW202032627A/en unknown
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