TWI464846B - - Google Patents

Info

Publication number
TWI464846B
TWI464846B TW101138456A TW101138456A TWI464846B TW I464846 B TWI464846 B TW I464846B TW 101138456 A TW101138456 A TW 101138456A TW 101138456 A TW101138456 A TW 101138456A TW I464846 B TWI464846 B TW I464846B
Authority
TW
Taiwan
Application number
TW101138456A
Other versions
TW201417229A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW101138456A priority Critical patent/TW201417229A/zh
Priority to CN201210545672.1A priority patent/CN103779392A/zh
Priority to US13/938,082 priority patent/US20140110768A1/en
Publication of TW201417229A publication Critical patent/TW201417229A/zh
Application granted granted Critical
Publication of TWI464846B publication Critical patent/TWI464846B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
TW101138456A 2012-10-18 2012-10-18 電晶體佈局裝置 TW201417229A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW101138456A TW201417229A (zh) 2012-10-18 2012-10-18 電晶體佈局裝置
CN201210545672.1A CN103779392A (zh) 2012-10-18 2012-12-14 晶体管布局装置
US13/938,082 US20140110768A1 (en) 2012-10-18 2013-07-09 Transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101138456A TW201417229A (zh) 2012-10-18 2012-10-18 電晶體佈局裝置

Publications (2)

Publication Number Publication Date
TW201417229A TW201417229A (zh) 2014-05-01
TWI464846B true TWI464846B (zh) 2014-12-11

Family

ID=50484575

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101138456A TW201417229A (zh) 2012-10-18 2012-10-18 電晶體佈局裝置

Country Status (3)

Country Link
US (1) US20140110768A1 (zh)
CN (1) CN103779392A (zh)
TW (1) TW201417229A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180069465A (ko) * 2016-12-15 2018-06-25 삼성전자주식회사 수직형 트랜지스터를 구비하는 집적 회로 및 이를 포함하는 반도체 장치
KR102307127B1 (ko) * 2017-06-14 2021-10-05 삼성전자주식회사 반도체 소자
CN110895648B (zh) * 2018-08-22 2021-08-24 无锡华润上华科技有限公司 功率器件及其电阻的仿真方法与功率器件的仿真工具

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790721B2 (en) * 2001-07-13 2004-09-14 Micron Technology, Inc. Metal local interconnect self-aligned source flash cell
US20070290278A1 (en) * 2006-06-20 2007-12-20 Agere Systems Incorporated Semiconductor device and process for reducing damaging breakdown in gate dielectrics
TW201237969A (en) * 2011-03-03 2012-09-16 Toshiba Kk Method of manufacturing semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1065146A (ja) * 1996-08-23 1998-03-06 Rohm Co Ltd 半導体集積回路装置
US7667316B2 (en) * 2006-10-31 2010-02-23 Panasonic Corporation Semiconductor integrated circuit and method for manufacturing the same
EP2308096A1 (en) * 2008-07-28 2011-04-13 Nxp B.V. Integrated circuit and method for manufacturing an integrated circuit
TW201225290A (en) * 2010-12-02 2012-06-16 Anpec Electronics Corp Power MOS device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790721B2 (en) * 2001-07-13 2004-09-14 Micron Technology, Inc. Metal local interconnect self-aligned source flash cell
US20070290278A1 (en) * 2006-06-20 2007-12-20 Agere Systems Incorporated Semiconductor device and process for reducing damaging breakdown in gate dielectrics
TW201237969A (en) * 2011-03-03 2012-09-16 Toshiba Kk Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
CN103779392A (zh) 2014-05-07
TW201417229A (zh) 2014-05-01
US20140110768A1 (en) 2014-04-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees