TWI461576B - Ultra thin copper foil with very low profile copper foil as carrier and its manufacturing method - Google Patents

Ultra thin copper foil with very low profile copper foil as carrier and its manufacturing method Download PDF

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TWI461576B
TWI461576B TW102103759A TW102103759A TWI461576B TW I461576 B TWI461576 B TW I461576B TW 102103759 A TW102103759 A TW 102103759A TW 102103759 A TW102103759 A TW 102103759A TW I461576 B TWI461576 B TW I461576B
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copper foil
carrier
ultra
foil
thin copper
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TW201329293A (en
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Ming Jen Tzou
Ya Mei Lin
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Nanya Plastics Corp
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以超低稜線銅箔為載體之極薄銅箔及其製造方法Ultra-thin copper foil with ultra-low ridge copper foil as carrier and manufacturing method thereof

本發明係有關以超低稜線銅箔為載體之極薄銅箔,更為詳細的說係由載體箔、剝離層及極薄銅箔所構成,應用在高密度及精細線路之印刷電路板、多層印刷電路板、覆晶薄膜等基材。The invention relates to an ultra-thin copper foil with ultra-low ridge copper foil as a carrier, and more specifically, is composed of a carrier foil, a peeling layer and an ultra-thin copper foil, and is applied to a printed circuit board of high density and fine lines, A substrate such as a multilayer printed circuit board or a flip chip.

附有載體之極薄銅箔係用在電子產業的領域做為高密度及精細線路用途之印刷電路板組件,現今講求的是輕、薄以及短、小化,對於電路線路的精密度要求亦趨向精密,銅箔的薄化處理需求也日益增加。現行附有載體之極薄銅箔,一般是使用18~35μm厚度之載體(銅箔或是鋁箔),再經由電鍍再附上1~6μm厚的極薄電解銅箔。The ultra-thin copper foil with carrier is used in the field of electronics industry as a printed circuit board assembly for high-density and fine-line applications. Today, it is light, thin, short, and small, and the precision requirements for circuit lines are also With the trend toward precision, the demand for thinning of copper foil is also increasing. In the current ultra-thin copper foil with a carrier, a carrier (copper foil or aluminum foil) having a thickness of 18 to 35 μm is generally used, and then a very thin electrolytic copper foil having a thickness of 1 to 6 μm is attached via electroplating.

隨著各種電子組件的高密度體積化,電路基板的組合及其電路圖案亦須高密度化,例如封裝所使用的印刷電路板,其電路間的線寬與線距是需要30μm左右的高密度微細電路,若使用的電解銅箔較厚則會增加蝕刻(Etching)的時間,其結果,將形成電路圖案側璧之垂直度被破壞,在線距要求較寬的電路上是不會產生,但對於較窄的電路則可能產生短路或斷線的問題。With the high density of various electronic components, the combination of circuit boards and their circuit patterns must be high-density. For example, printed circuit boards used for packaging, the line width and line spacing between circuits need to be high density and fineness of about 30 μm. In the circuit, if the electrolytic copper foil used is thick, the etching time is increased. As a result, the verticality of the side of the circuit pattern is broken, and the circuit having a wide line distance is not generated, but A narrower circuit can cause problems with short circuits or broken wires.

載體箔與極薄銅箔間的剝離層,常用有機系的含氮有機化合物或者無機系的鉻金屬或鉻酸鹽兩元合金無機膜層。使用有機系的有機剝離膜層缺點,不但有鍍液與廢水排放處理,增加了處理的費用與時間問題,且在高溫的電路板製程中會產生氣泡,引起電路板的製造品質與產生電測試穩定性問題。另一方面,剝離膜層由無機系兩元合金所組成,其膜層厚度比例是控制載體箔與極薄銅箔結合強度的重要因素,當兩者比例控制不佳,容易有剝離不完全或極易剝離造成壓板後氧化變色等缺失。The peeling layer between the carrier foil and the ultra-thin copper foil is usually an organic nitrogen-containing organic compound or an inorganic chromium metal or chromate ternary alloy inorganic film layer. The use of organic organic peeling film defects, not only the plating solution and wastewater discharge treatment, increases the cost and time of processing, and in the high-temperature circuit board process will generate bubbles, causing the manufacturing quality of the circuit board and the electrical test Stability issue. On the other hand, the release film layer is composed of an inorganic two-component alloy, and the film thickness ratio is an important factor for controlling the bonding strength between the carrier foil and the ultra-thin copper foil. When the ratio of the two is poorly controlled, it is easy to have incomplete peeling or It is easily peeled off and causes oxidative discoloration and other defects after the platen.

微細電路圖案用的極薄銅箔,是將在於載體箔上的剝離層直接加以電解沉積形成,最佳的厚度是5μm以下。由於載體箔表面型態直接影響剝離層與極薄銅箔層,當載體表面粗度過高時,後續電鍍之極薄銅箔也易有高粗度,進而影響蝕刻性。另外,載體箔表面型態不均一時也會影響極薄銅箔之厚度均一性。同時當載體箔具有針孔時,極薄銅箔也會具有針孔。由於載體箔為後續剝離層與極薄銅箔之基礎,因此載體銅箔之選用,相當重要。昔用之發明,主要係以傳統HTE(High Temperature Elongation)銅箔、或是壓延銅箔做為載體銅箔,但是使用HTE銅箔,容易有表面均一性不佳,以及針孔等問題。另一方面,使用壓延銅箔因幅寬及成本等問題,而限制了產品之使用性。The ultra-thin copper foil for the fine circuit pattern is formed by directly depositing a peeling layer on the carrier foil, and the optimum thickness is 5 μm or less. Since the surface pattern of the carrier foil directly affects the peeling layer and the ultra-thin copper foil layer, when the surface roughness of the carrier is too high, the ultra-thin copper foil which is subsequently plated is also likely to have a high thickness, thereby affecting the etching property. In addition, when the surface pattern of the carrier foil is not uniform, the thickness uniformity of the ultra-thin copper foil is also affected. At the same time, when the carrier foil has pinholes, the ultra-thin copper foil also has pinholes. Since the carrier foil is the basis of the subsequent release layer and the ultra-thin copper foil, the selection of the carrier copper foil is quite important. The invention used in the past mainly uses a conventional HTE (High Temperature Elongation) copper foil or a rolled copper foil as a carrier copper foil, but the use of the HTE copper foil tends to have problems such as poor surface uniformity and pinholes. On the other hand, the use of rolled copper foil limits the usability of the product due to problems such as width and cost.

除此之外,極薄銅箔之壓合(mat)面與環氧樹脂基材的熱壓合,極薄銅箔壓合面的粗化處理、防鏽處理以及矽烷塗佈處理等都與基材的接著性息息相關,明顯影響產品品質。In addition, the matte surface of the ultra-thin copper foil is thermocompression bonded to the epoxy resin substrate, and the roughening treatment of the ultra-thin copper foil pressing surface, the anti-rust treatment, and the decane coating treatment are all The adhesion of the substrate is closely related, which obviously affects the quality of the product.

鑑於上述現行附有載體之極薄銅箔缺失,發明人等經多年之工作經驗及研究試驗發現由以超低稜線銅箔為載體、四元合金剝離層、以及極薄銅箔所構成的以超低稜線銅箔為載體之極薄銅箔如第1圖所示。其載體層使用南亞之超低稜線銅箔,具有表面型態均一,表面粗度平滑以及無針孔之特點。而剝離層方面,其剝離層影響載體箔與極薄銅箔間的結合強度最大,此剝離層由四元合金之鉬、鎳、鉻、鉀金屬所構成時,較二元合金更具良好的抗氧化特性與蝕刻特性,同時在高溫的熱壓環境下,載體箔與極薄銅箔仍舊擁有優異的剝離特性,此為本發明之重要特性。In view of the above-mentioned current ultra-thin copper foil with carrier, the inventors have found that the ultra-low ridge copper foil is used as the carrier, the quaternary alloy peeling layer, and the ultra-thin copper foil after years of work experience and research. An ultra-thin copper foil with an ultra-low ridge copper foil as a carrier is as shown in Fig. 1. The carrier layer uses the ultra-low ridge copper foil of South Asia, which has the characteristics of uniform surface type, smooth surface roughness and no pinhole. In terms of the release layer, the release layer affects the bond strength between the carrier foil and the ultra-thin copper foil. When the release layer is composed of quaternary alloys of molybdenum, nickel, chromium and potassium, it is better than the binary alloy. The anti-oxidation property and the etching property, while at a high temperature and hot pressing environment, the carrier foil and the ultra-thin copper foil still have excellent peeling characteristics, which is an important characteristic of the invention.

1‧‧‧極薄銅箔1‧‧‧very thin copper foil

2‧‧‧剝離層2‧‧‧ peeling layer

3‧‧‧載體箔3‧‧‧Carrier foil

4‧‧‧蝕刻(Etching)線路型態4‧‧‧Etching line type

5‧‧‧蝕刻(Etching)基材型態5‧‧‧ Etching substrate type

第1圖為銅箔構造說明。Figure 1 is a description of the structure of the copper foil.

第2圖為蝕刻(Etching)線路型態。Figure 2 shows the Etching line type.

第3圖為載體箔與極薄銅箔應用於不同基材之結合力。Figure 3 shows the adhesion of the carrier foil to the very thin copper foil applied to different substrates.

本發明之目的在於提供一種以超低稜線銅箔為載體之極薄銅箔,該極薄銅箔具有良好的抗氧化特性與蝕刻特性,在高溫的熱壓環境 下載體箔與極薄銅箔仍舊擁有優異的剝離特性,同時載體銅箔厚度均一且針孔數量極少。The object of the present invention is to provide an ultra-thin copper foil with ultra-low ridge copper foil as a carrier, the ultra-thin copper foil has good oxidation resistance and etching characteristics, and is heated at a high temperature. The download body foil and ultra-thin copper foil still have excellent peeling properties, while the carrier copper foil has a uniform thickness and a very small number of pinholes.

一般附有載體之極薄銅箔的金屬載體箔,有鋁箔、銅箔、鈦箔、不鏽鋼箔等等,其載體箔均以表面平整性極優之金屬箔,厚度為12-70μm,優選為18~35μm,載體箔光澤面粗糙度(Surface Roughness;係指十點平均粗糙度值Rz,並以μm為單位)在1.5μm以下所構成。A metal carrier foil generally having a carrier-attached ultra-thin copper foil, such as aluminum foil, copper foil, titanium foil, stainless steel foil, etc., the carrier foil of which is excellent in surface flatness, and has a thickness of 12-70 μm, preferably 18 to 35 μm, carrier foil gloss surface roughness (Surface Roughness; refers to the ten point average roughness value Rz, and in μm) is 1.5 μm or less.

本發明做為剝離層與極薄銅箔之基礎之載體層箔,為超低稜線銅箔(VLP銅箔),其特點在於兩面呈現光亮特徵,粗度低、厚度均一與無針孔。上述特性對於後續之剝離層與極薄銅箔皆有助益。然而要強調的是,基於本專利後續所提之優良剝離層與極薄銅箔層配方,因此不論載體銅箔之種類或是厚度之變化,對於本專利之附有載體銅箔之極薄銅箔其基本特性(如剝離特性、蝕刻特性與耐高溫特性等)其特性並不會有明顯劣化。但是若使用優良之VLP銅箔,對於附有載體銅箔之極薄銅箔,其整體特性會有提升。The carrier layer foil which is the basis of the peeling layer and the ultra-thin copper foil is an ultra-low ridge copper foil (VLP copper foil), which is characterized in that the two sides have a bright characteristic, the thickness is low, the thickness is uniform and there is no pinhole. These characteristics are useful for subsequent release layers and very thin copper foils. However, it should be emphasized that, based on the fine peeling layer and the ultra-thin copper foil layer formulation mentioned in the following patent, the ultra-thin copper with the carrier copper foil attached to this patent is used regardless of the type or thickness of the carrier copper foil. The basic characteristics of the foil (such as peeling characteristics, etching characteristics, and high temperature resistance characteristics) are not significantly deteriorated. However, if an excellent VLP copper foil is used, the overall characteristics of the ultra-thin copper foil with the carrier copper foil are improved.

本發明做為載體箔與極薄銅箔之架構的剝離層,為影響結合力最大之重要電鍍層,剝離層結合力太強則無法剝離,太弱則在高溫熱壓合下載體箔與極薄銅箔極易分離,造成極薄銅箔光澤面氧化變色等問題,如何有效控制剝離層的均勻性與厚度,是目前必須克服的重要課題。為了克服上述缺失,經發明人逐一試驗發現當剝離層由電鍍具有剝離特性之四元合金之鉬、鎳、鉻、鉀等金屬構成時,可克服上述缺失並達成本發明之目的。The invention is used as a peeling layer of the structure of the carrier foil and the ultra-thin copper foil, and is an important plating layer which has the greatest influence on the bonding force. When the bonding strength of the peeling layer is too strong, the peeling layer cannot be peeled off, and if it is too weak, the foil and the electrode are pressed at a high temperature. The thin copper foil is easy to separate, causing problems such as oxidative discoloration of the shiny surface of the extremely thin copper foil. How to effectively control the uniformity and thickness of the peeling layer is an important subject that must be overcome at present. In order to overcome the above-mentioned drawbacks, it has been found by the inventors one by one that when the peeling layer is composed of a metal such as molybdenum, nickel, chromium, potassium or the like which is plated with a quaternary alloy having a peeling property, the above-mentioned deficiency can be overcome and the object of the present invention can be attained.

本發明之極薄銅箔是先使用PH=6~10之焦磷酸銅電鍍浴、後使用PH=1~12之硫酸銅電鍍浴電鍍金屬載體箔所形成,係在剝離層上先電鍍形成焦磷酸銅層做為剝離層的防止層以保護剝離層不被硫酸銅電鍍浴洗掉,影響後續極薄銅箔的形成與剝離強度之改變。然後於硫酸銅電鍍浴中形成極薄銅箔厚度1~6μm。以下為使貴審查委員能進一步明瞭技術特徵,茲提出具備實施例以說明支持發明內容。The ultra-thin copper foil of the invention is formed by first using a copper pyrophosphate plating bath of PH=6~10, and then plating a metal carrier foil with a copper sulfate electroplating bath of pH=1~12, which is electroplated to form a coke on the peeling layer. The copper phosphate layer acts as a barrier layer for the release layer to protect the release layer from being washed away by the copper sulfate plating bath, affecting the formation of the subsequent ultra-thin copper foil and the change in peel strength. Then, a very thin copper foil thickness of 1 to 6 μm is formed in the copper sulfate plating bath. In the following, in order to enable the review committee to further understand the technical features, it is proposed to have examples to support the contents of the invention.

依照本發明,係將平整性極優之銅箔製成載體箔置入硫酸鎳六水合物濃度10~50g/L,鉬酸納二水合物濃度0.5~10g/L,K4 P2 O7 :50~100g/L,CrO3 :0.5~2g/L的電鍍浴槽中電鍍形成剝離層,接著於剝離層上再施以 Cu2 P2 O7 .3H2 O:10~60g/L,K4 P2 O7 :100~400g/L浴之電鍍做為保護層,再以銅濃度:50~100g/L,硫酸:90~125 g/L之電解液電鍍成為3μm以下之極薄銅箔。According to the invention, the copper foil with excellent flatness is made into a carrier foil and the concentration of nickel sulfate hexahydrate is 10~50g/L, and the concentration of sodium dihydrate molybdate is 0.5~10g/L, K 4 P 2 O 7 : 50 ~ 100g / L, CrO 3: 0.5 ~ 2g / L in the plating bath in a plating peeling layer is formed, and then the release layer was applied on the Cu 2 P 2 O 7 .3H 2 O: 10 ~ 60g / L, K 4 P 2 O 7 : 100~400g/L bath electroplating as a protective layer, and then electroplating with copper concentration: 50~100g/L, sulfuric acid: 90~125 g/L to become ultra-thin copper foil of 3μm or less .

為了得到極薄銅箔表面與基板間有更強的剝離強度,本發明之極薄銅箔表面施以粗化處理,再於粗化處理表面附上具有防鏽和耐熱性效果之鋅、鎳金屬以及鉻酸鹽,又為了提升極薄銅箔與基材的剝離強度,塗佈矽烷使其具有提升剝離強度效果。In order to obtain a stronger peeling strength between the surface of the ultra-thin copper foil and the substrate, the surface of the ultra-thin copper foil of the present invention is subjected to roughening treatment, and zinc and nickel having anti-rust and heat-resistance effects are attached to the roughened surface. Metals and chromates, in order to improve the peel strength of the ultra-thin copper foil and the substrate, coated with decane to improve the peel strength.

〔實施例1〕[Example 1]

1.將光澤面粗糙度(Surface Roughness;係指十點平均粗糙度值Rz,並以μm為單位)1.5μm以下,平整性極優,厚度18μm之南亞VLP銅箔做為載體箔。1. The surface roughness (Surface Roughness: refers to the ten-point average roughness value Rz and in μm) of 1.5 μm or less, and the South Asian VLP copper foil with excellent flatness and thickness of 18 μm is used as the carrier foil.

2.置入硫酸鎳六水合物:10~50g/L,鉬酸納二水合物:0.5~10g/L,K4 P2 O7 :50~100g/L,CrO3 :0.5~2g/L,PH:6~10,浴溫:10~50℃,電流密度:6~15A/dm2 ,通電時間:20秒之鉬、鎳、鉻、鉀四元合金的電鍍浴槽中電鍍製成具鉬、鎳、鉻、鉀合金剝離層。2. Place nickel sulfate hexahydrate: 10~50g/L, sodium dihydrate molybdate: 0.5~10g/L, K 4 P 2 O 7 : 50~100g/L, CrO 3 : 0.5~2g/L , PH: 6~10, bath temperature: 10~50°C, current density: 6~15A/dm 2 , electrification time: 20 seconds of electroplating bath made of molybdenum, nickel, chromium and potassium quaternary alloys , nickel, chromium, potassium alloy peeling layer.

3.接著於剝離層上方施以Cu2 P2 O7 .3H2 O:10~60g/L,K4 P2 O7 :100~400g/L,PH:6~10,浴溫:10~60℃,電流密度:1~5A/dm2 ,通電時間:15秒之電鍍做為剝離層保護層。3. Next, apply Cu 2 P 2 O 7 over the release layer. 3H 2 O: 10~60g/L, K 4 P 2 O 7 : 100~400g/L, PH: 6~10, bath temperature: 10~60°C, current density: 1~5A/dm 2 , power-on time: The 15 second plating was used as a peeling layer protective layer.

4.再以銅濃度:50~100g/L,硫酸:90~125g/L,浴溫:40~70℃,電流密度:25A/dm2 ,通電時間:20秒施行電鍍成為厚度3μm之極薄銅箔。4. Further copper concentration: 50~100g/L, sulfuric acid: 90~125g/L, bath temperature: 40~70°C, current density: 25A/dm 2 , energization time: 20 seconds, electroplating becomes extremely thin with thickness of 3μm Copper foil.

5.再利用習知之粗化處理技術於壓合(mat)面施行銅粒子處理,然後再施以鍍鋅以及鉻酸鹽之防鏽處理與塗佈矽烷,製得以超低稜線銅箔為載體之極薄銅箔,經測試其載體箔與極薄銅箔無法剝離。5. Re-use the conventional roughening treatment technology to perform copper particle treatment on the mat surface, and then apply galvanizing and chromate anti-rust treatment and coating decane to obtain ultra-low ridge copper foil as carrier. The ultra-thin copper foil has been tested and its carrier foil and ultra-thin copper foil cannot be peeled off.

〔實施例2〕[Example 2]

1.將光澤面粗糙度(Surface Roughness;係指十點平均粗糙度值Rz,並以μm為單位)1.5μm以下,平整性極優,厚度18μm之南亞VLP銅箔做為載體箔。1. The surface roughness (Surface Roughness: refers to the ten-point average roughness value Rz and in μm) of 1.5 μm or less, and the South Asian VLP copper foil with excellent flatness and thickness of 18 μm is used as the carrier foil.

2.置入硫酸鎳六水合物:10~50g/L,鉬酸納二水合物:0.5~10g/L,K4 P2 O7 :50~100g/L,CrO3 :0.5~2g/L,PH:6~10,浴溫:10~50℃, 電流密度:1~2.5A/dm2 ,通電時間:20秒之鉬、鎳、鉻、鉀四元合金的電鍍浴槽中電鍍製成具鉬、鎳、鉻、鉀合金剝離層。2. Place nickel sulfate hexahydrate: 10~50g/L, sodium dihydrate molybdate: 0.5~10g/L, K 4 P 2 O 7 : 50~100g/L, CrO 3 : 0.5~2g/L , PH: 6~10, bath temperature: 10~50°C, current density: 1~2.5A/dm 2 , electrification time: 20 seconds of electroplating bath of molybdenum, nickel, chromium and potassium quaternary alloy Molybdenum, nickel, chromium, potassium alloy release layer.

3.接著於剝離層上方施以Cu2 P2 O7 .3H2 O:10~60g/L,K4 P2 O7 :100~400g/L,PH:6~10,浴溫:10~60℃,電流密度:1~5A/dm2 ,通電時間:15秒之電鍍做為剝離層保護層。3. Next, apply Cu 2 P 2 O 7 .3H 2 O: 10~60g/L, K 4 P 2 O 7 : 100~400g/L, PH: 6~10, bath temperature: 10~ above the peeling layer. 60 ° C, current density: 1 ~ 5A / dm 2 , power-on time: 15 seconds of plating as a peeling layer protective layer.

4.再以銅濃度:50~100g/L,硫酸:90~125g/L,浴溫:40~70℃,電流密度:25A/dm2 ,通電時間:20秒施行電鍍成為厚度3μm之極薄銅箔。4. Further copper concentration: 50~100g/L, sulfuric acid: 90~125g/L, bath temperature: 40~70°C, current density: 25A/dm 2 , energization time: 20 seconds, electroplating becomes extremely thin with thickness of 3μm Copper foil.

5.再利用習知之粗化處理技術於壓合(mat)面施行銅粒子處理,然後再施以鍍鋅以及鉻酸鹽之防鏽處理與塗佈矽烷,製得以超低稜線銅箔為載體之極薄銅箔,經測試其載體箔與極薄銅箔幾乎無結合力。5. Re-use the conventional roughening treatment technology to perform copper particle treatment on the mat surface, and then apply galvanizing and chromate anti-rust treatment and coating decane to obtain ultra-low ridge copper foil as carrier. The ultra-thin copper foil has been tested and its carrier foil has almost no bonding force with the ultra-thin copper foil.

〔實施例3〕[Example 3]

1.將光澤面粗糙度(Surface Roughness;係指十點平均粗糙度值Rz,並以μm為單位)1.5μm以下,平整性極優,厚度18μm之南亞VLP銅箔做為載體箔。1. The surface roughness (Surface Roughness: refers to the ten-point average roughness value Rz and in μm) of 1.5 μm or less, and the South Asian VLP copper foil with excellent flatness and thickness of 18 μm is used as the carrier foil.

2.置入硫酸鎳六水合物:10~50g/L,鉬酸納二水合物:0.5~10g/L,K4 P2 O7 :50~100g/L,CrO3 :0.5~2g/L,PH:6~10,浴溫:10~50℃,電流密度:2.5~6A/dm2 ,通電時間:20秒之鉬、鎳、鉻、鉀四元合金的電鍍浴槽中電鍍製成具鉬、鎳、鉻、鉀合金剝離層。2. Place nickel sulfate hexahydrate: 10~50g/L, sodium dihydrate molybdate: 0.5~10g/L, K 4 P 2 O 7 : 50~100g/L, CrO 3 : 0.5~2g/L , PH: 6~10, bath temperature: 10~50°C, current density: 2.5~6A/dm 2 , electrification time: 20 seconds of electroplating bath made of molybdenum, nickel, chromium and potassium quaternary alloys , nickel, chromium, potassium alloy peeling layer.

3.接著於剝離層上方施以Cu2 P2 O7 .3H2 O:10~60g/L,K4 P2 O7 :100~400g/L,PH:6~10,浴溫:10~60℃,電流密度:1~5A/dm2 ,通電時間:15秒之電鍍做為剝離層保護層。3. Next, apply Cu 2 P 2 O 7 .3H 2 O: 10~60g/L, K 4 P 2 O 7 : 100~400g/L, PH: 6~10, bath temperature: 10~ above the peeling layer. 60 ° C, current density: 1 ~ 5A / dm 2 , power-on time: 15 seconds of plating as a peeling layer protective layer.

4.再以銅濃度:50~100g/L,硫酸:90~125g/L,浴溫:40~70℃,電流密度:25A/dm2 ,通電時間:20秒施行電鍍成為厚度3μm之極薄銅箔。4. Further copper concentration: 50~100g/L, sulfuric acid: 90~125g/L, bath temperature: 40~70°C, current density: 25A/dm 2 , energization time: 20 seconds, electroplating becomes extremely thin with thickness of 3μm Copper foil.

5.再利用習知之粗化處理技術於壓合(mat)面施行銅粒子處理,然後再施以鍍鋅以及鉻酸鹽之防鏽處理與塗佈矽烷,製得以超低稜線銅箔為載體之極薄銅箔。以日本Shimadzu公司製的拉力試驗機測得載體箔與極薄銅箔結合力為2.87g/cm。5. Re-use the conventional roughening treatment technology to perform copper particle treatment on the mat surface, and then apply galvanizing and chromate anti-rust treatment and coating decane to obtain ultra-low ridge copper foil as carrier. Extremely thin copper foil. The binding force between the carrier foil and the ultra-thin copper foil was measured to be 2.87 g/cm by a tensile tester manufactured by Shimadzu Corporation, Japan.

〔比較例1〕[Comparative Example 1]

1.將光澤面粗糙度(Surface Roughness;係指十點平均粗糙度值Rz,並以μm為單位)1.5μm以下平整性極優厚度18μm之南亞VLP銅箔做為載體箔。1. A South Asian VLP copper foil having a smooth surface roughness (Surface Roughness: ten point average roughness value Rz and in μm) of 1.5 μm or less and a flatness excellent thickness of 18 μm is used as a carrier foil.

2.置入硫酸鎳六水合物:10~50g/L,鉬酸納二水合物:0.5~10g/L,K4 P2 O7 :50~100g/L,PH:6~10,浴溫:10~50℃,電流密度:2.5~6A/dm2 ,通電時間:20秒之鉬、鎳、鉀三元合金的電鍍浴槽中製成具鉬、鎳、鉀合金剝離層。2. Place nickel sulfate hexahydrate: 10~50g/L, sodium dihydrate molybdate: 0.5~10g/L, K 4 P 2 O 7 : 50~100g/L, PH: 6~10, bath temperature : 10~50 °C, current density: 2.5~6A/dm 2 , electrification time: 20 seconds of molybdenum, nickel, potassium ternary alloy plating bath made of molybdenum, nickel, potassium alloy peeling layer.

3.接著於剝離層上方施以Cu2 P2 O7 .3H2 O:10~60g/L,K4 P2 O7 :100~400g/L,PH:6~10,浴溫:10~60℃,電流密度:1~5A/dm2 ,通電時間:15秒之電鍍做為剝離層保護層。3. Next, apply Cu 2 P 2 O 7 .3H 2 O: 10~60g/L, K 4 P 2 O 7 : 100~400g/L, PH: 6~10, bath temperature: 10~ above the peeling layer. 60 ° C, current density: 1 ~ 5A / dm 2 , power-on time: 15 seconds of plating as a peeling layer protective layer.

4.再以銅濃度:50~100g/L,硫酸:90~125g/L,浴溫:40~70℃,電流密度:25A/dm2 ,通電時間:20秒施行電鍍成為厚度3μm之極薄銅箔。4. Further copper concentration: 50~100g/L, sulfuric acid: 90~125g/L, bath temperature: 40~70°C, current density: 25A/dm 2 , energization time: 20 seconds, electroplating becomes extremely thin with thickness of 3μm Copper foil.

5.再利用習知之粗化處理技術於壓合(mat)面施行銅粒子處理,然後再施以鍍鋅以及鉻酸鹽之防鏽處理與塗佈矽烷,製得以超低稜線銅箔為載體之極薄銅箔,以日本Shimadzu公司製的拉力試驗機測得載體箔與極薄銅箔結合力為5.40g/cm。5. Re-use the conventional roughening treatment technology to perform copper particle treatment on the mat surface, and then apply galvanizing and chromate anti-rust treatment and coating decane to obtain ultra-low ridge copper foil as carrier. The extremely thin copper foil was measured by a tensile tester manufactured by Shimadzu Co., Ltd., Japan, and the binding force between the carrier foil and the ultra-thin copper foil was 5.40 g/cm.

〔比較例2〕[Comparative Example 2]

1.將光澤面粗糙度(Surface Roughness;係指十點平均粗糙度值Rz,並以μm為單位)1.5μm以下平整性極優厚度18μm之南亞VLP銅箔做為載體箔。1. A South Asian VLP copper foil having a smooth surface roughness (Surface Roughness: ten point average roughness value Rz and in μm) of 1.5 μm or less and a flatness excellent thickness of 18 μm is used as a carrier foil.

2.置入鉬酸納二水合物:0.5~10g/L,K4 P2 O7 :50~100g/L,CrO3 :0.5~2g/L,PH:6~10,浴溫:10~50℃,電流密度:2.5~6A/dm2 ,通電時間:20秒之鉬、鉀、鉻三元合金的電鍍浴槽中電鍍製成具鉬、鉀、鉻合金剝離層。2. Inserted sodium dihydrate molybdate: 0.5~10g/L, K 4 P 2 O 7 : 50~100g/L, CrO 3 : 0.5~2g/L, PH: 6~10, bath temperature: 10~ 50 ° C, current density: 2.5 ~ 6A / dm 2 , electrification time: 20 seconds of molybdenum, potassium, chromium ternary alloy plating bath in the plating bath with molybdenum, potassium, chromium alloy peeling layer.

3.接著於剝離層上方施以Cu2 P2 O7 .3H2 O:10~60g/L,K4 P2 O7 :100~400g/L,PH:6~10,浴溫:10~60℃,電流密度:1~5A/dm2 ,通電時間:15秒之電鍍做為剝離層保護層。3. Next, apply Cu 2 P 2 O 7 .3H 2 O: 10~60g/L, K 4 P 2 O 7 : 100~400g/L, PH: 6~10, bath temperature: 10~ above the peeling layer. 60 ° C, current density: 1 ~ 5A / dm 2 , power-on time: 15 seconds of plating as a peeling layer protective layer.

4.再以銅濃度:50~100g/L,硫酸:90~125g/L,浴溫:40~70℃,電流密度:25A/dm2 ,通電時間:20秒施行電鍍成為厚度3μm之極薄 銅箔。4. Further copper concentration: 50~100g/L, sulfuric acid: 90~125g/L, bath temperature: 40~70°C, current density: 25A/dm 2 , energization time: 20 seconds, electroplating becomes extremely thin with thickness of 3μm Copper foil.

5.再利用習知之粗化處理技術於壓合(mat)面施行銅粒子處理,然後再施以鍍鋅以及鉻酸鹽之防鏽處理與塗佈矽烷,製得以超低稜線銅箔為載體之極薄銅箔。經測試其載體箔與極薄銅箔無法剝離。5. Re-use the conventional roughening treatment technology to perform copper particle treatment on the mat surface, and then apply galvanizing and chromate anti-rust treatment and coating decane to obtain ultra-low ridge copper foil as carrier. Extremely thin copper foil. The carrier foil and the ultra-thin copper foil were tested to be incapable of being peeled off.

〔比較例3〕[Comparative Example 3]

1.將光澤面粗糙度(Surface Roughness;係指十點平均粗糙度值Rz,並以μm為單位)1.5μm以下平整性極優厚度18μm之南亞VLP銅箔做為載體箔。1. A South Asian VLP copper foil having a smooth surface roughness (Surface Roughness: ten point average roughness value Rz and in μm) of 1.5 μm or less and a flatness excellent thickness of 18 μm is used as a carrier foil.

2.置入硫酸鎳六水合物:10~50g/L,K4 P2 O7 :50~100g/L,CrO3 :0.5~2g/L,PH:6~10,浴溫:10~50℃,電流密度:2.5~6A/dm2 ,通電時間:20秒之鎳、鉀、鉻三元合金的電鍍浴槽中製成具鎳、鉀、鉻合金剝離層。2. Place nickel sulfate hexahydrate: 10~50g/L, K 4 P 2 O 7 : 50~100g/L, CrO 3 : 0.5~2g/L, PH: 6~10, bath temperature: 10~50 °C, current density: 2.5~6A/dm 2 , energization time: 20 seconds nickel, potassium, chromium ternary alloy plating bath made of nickel, potassium, chromium alloy peeling layer.

3.接著於剝離層上方施以Cu2 P2 O7 .3H2 O:10~60g/L,K4 P2 O7 :100~400g/L,PH:6~10,浴溫:10~60℃,電流密度:1~5A/dm2 ,通電時間:15秒之電鍍做為剝離層保護層。3. Next, apply Cu 2 P 2 O 7 .3H 2 O: 10~60g/L, K 4 P 2 O 7 : 100~400g/L, PH: 6~10, bath temperature: 10~ above the peeling layer. 60 ° C, current density: 1 ~ 5A / dm 2 , power-on time: 15 seconds of plating as a peeling layer protective layer.

4.再以銅濃度:50~100g/L,硫酸:90~125g/L,浴溫:40~70℃,電流密度:25A/dm2 ,通電時間:20秒施行電鍍成為厚度3μm之極薄銅箔。4. Further copper concentration: 50~100g/L, sulfuric acid: 90~125g/L, bath temperature: 40~70°C, current density: 25A/dm 2 , energization time: 20 seconds, electroplating becomes extremely thin with thickness of 3μm Copper foil.

5.再利用習知之粗化處理技術於壓合(mat)面施行銅粒子處理,然後再施以鍍鋅以及鉻酸鹽之防鏽處理與塗佈矽烷,製得以超低稜線銅箔為載體之極薄銅箔,經測試其載體箔與極薄銅箔無法剝離。5. Re-use the conventional roughening treatment technology to perform copper particle treatment on the mat surface, and then apply galvanizing and chromate anti-rust treatment and coating decane to obtain ultra-low ridge copper foil as carrier. The ultra-thin copper foil has been tested and its carrier foil and ultra-thin copper foil cannot be peeled off.

〔比較例4〕[Comparative Example 4]

1.將光澤面粗糙度(Surface Roughness;係指十點平均粗糙度值Rz,並以μm為單位)1.5μm以下平整性極優厚度18μm之南亞VLP銅箔做為載體箔。1. A South Asian VLP copper foil having a smooth surface roughness (Surface Roughness: ten point average roughness value Rz and in μm) of 1.5 μm or less and a flatness excellent thickness of 18 μm is used as a carrier foil.

2.置入硫酸鎳六水合物:10~50g/L,鉬酸納二水合物:0.5~10g/L,CrO3 :0.5~2g/L,PH:6~10,浴溫:10~50℃,電流密度:2.5~6A/dm2 ,通電時間:20秒之鎳、鉬、鉻三元合金的電鍍浴槽中製成具鎳、鉬、鉻合金剝離層。2. Place nickel sulfate hexahydrate: 10~50g/L, sodium dihydrate molybdate: 0.5~10g/L, CrO 3 : 0.5~2g/L, PH: 6~10, bath temperature: 10~50 °C, current density: 2.5~6A/dm 2 , energization time: 20 seconds of nickel, molybdenum, chromium ternary alloy plating bath made of nickel, molybdenum, chromium alloy peeling layer.

3.接著於剝離層上方施以Cu2 P2 O7 .3H2 O:10~60g/L,K4 P2 O7 :100~400g/L,PH:6~10,浴溫:10~60℃,電流密度:1~5A/dm2 ,通電時間: 15秒之電鍍做為剝離層保護層。3. Next, apply Cu 2 P 2 O 7 .3H 2 O: 10~60g/L, K 4 P 2 O 7 : 100~400g/L, PH: 6~10, bath temperature: 10~ above the peeling layer. 60 ° C, current density: 1 ~ 5A / dm 2 , power-on time: 15 seconds of plating as a peeling layer protective layer.

4.再以銅濃度:50~100g/L,硫酸:90~125g/L,浴溫:40~70℃,電流密度:25A/dm2 ,通電時間:20秒施行電鍍成為厚度3μm之極薄銅箔。4. Further copper concentration: 50~100g/L, sulfuric acid: 90~125g/L, bath temperature: 40~70°C, current density: 25A/dm 2 , energization time: 20 seconds, electroplating becomes extremely thin with thickness of 3μm Copper foil.

5.再利用習知之粗化處理技術於壓合(mat)面施行銅粒子處理,然後再施以鍍鋅以及鉻酸鹽之防鏽處理與塗佈矽烷,製得以超低稜線銅箔為載體之極薄銅箔。以日本Shimadzu公司製的拉力試驗機測得載體箔與極薄銅箔結合力為11.45g/cm。5. Re-use the conventional roughening treatment technology to perform copper particle treatment on the mat surface, and then apply galvanizing and chromate anti-rust treatment and coating decane to obtain ultra-low ridge copper foil as carrier. Extremely thin copper foil. The bonding force between the carrier foil and the ultra-thin copper foil was measured to be 11.45 g/cm by a tensile tester manufactured by Shimadzu Corporation of Japan.

〔比較例5〕[Comparative Example 5]

1.將光澤面粗糙度(Surface Roughness;係指十點平均粗糙度值Rz,並以μm為單位)1.5μm以下平整性極優厚度18μm之南亞VLP銅箔做為載體箔。1. A South Asian VLP copper foil having a smooth surface roughness (Surface Roughness: ten point average roughness value Rz and in μm) of 1.5 μm or less and a flatness excellent thickness of 18 μm is used as a carrier foil.

2.置入硫酸鎳六水合物:10~50g/L,鉬酸納二水合物:0.5~10g/L,CrO3 :0.5~2g/L,檸檬酸鈉:100~350g/L,PH:6~10,浴溫:10~50℃,電流密度:2.5~6A/dm2 ,通電時間:20秒之鎳、鉬、鉻、鈉四元合金的電鍍浴槽中製成具鎳、鉬、鉻、鈉合金剝離層。2. Place nickel sulfate hexahydrate: 10~50g/L, sodium dihydrate molybdate: 0.5~10g/L, CrO 3 : 0.5~2g/L, sodium citrate: 100~350g/L, PH: 6~10, bath temperature: 10~50°C, current density: 2.5~6A/dm 2 , energization time: 20 seconds of nickel, molybdenum, chromium, sodium quaternary alloy plating bath made of nickel, molybdenum, chromium , sodium alloy release layer.

3.接著於剝離層上方施以Cu2 P2 O7 .3H2 O:10~60g/L,K4 P2 O7 :100~400g/L,PH:6~10,浴溫:10~60℃,電流密度:1~5A/dm2 ,通電時間:15秒之電鍍做為剝離層保護層。3. Next, apply Cu 2 P 2 O 7 .3H 2 O: 10~60g/L, K 4 P 2 O 7 : 100~400g/L, PH: 6~10, bath temperature: 10~ above the peeling layer. 60 ° C, current density: 1 ~ 5A / dm 2 , power-on time: 15 seconds of plating as a peeling layer protective layer.

4.再以銅濃度:50~100g/L,硫酸:90~125g/L,浴溫:40~70℃,電流密度:25A/dm2 ,通電時間:20秒施行電鍍成為厚度3μm之極薄銅箔。4. Further copper concentration: 50~100g/L, sulfuric acid: 90~125g/L, bath temperature: 40~70°C, current density: 25A/dm 2 , energization time: 20 seconds, electroplating becomes extremely thin with thickness of 3μm Copper foil.

5.再利用習知之粗化處理技術於壓合(mat)面施行銅粒子處理,然後再施以鍍鋅以及鉻酸鹽之防鏽處理與塗佈矽烷,製得以超低稜線銅箔為載體之極薄銅箔。經測試其載體箔與極薄銅箔無法剝離。5. Re-use the conventional roughening treatment technology to perform copper particle treatment on the mat surface, and then apply galvanizing and chromate anti-rust treatment and coating decane to obtain ultra-low ridge copper foil as carrier. Extremely thin copper foil. The carrier foil and the ultra-thin copper foil were tested to be incapable of being peeled off.

〔比較例6〕[Comparative Example 6]

1.將光澤面粗糙度(Surface Roughness;係指十點平均粗糙度值Rz,並以μm為單位)1.5μm以下,平整性極優,厚度18μm之南亞HTE銅箔做為載體箔。1. The surface roughness (Surface Roughness: refers to the ten-point average roughness value Rz, and in μm) of 1.5 μm or less, and the South Asian HTE copper foil with excellent flatness and thickness of 18 μm is used as the carrier foil.

2.置入硫酸鎳六水合物:10~50g/L,鉬酸納二水合物: 0.5~10g/L,K4 P2 O7 :50~100g/L,CrO3 :0.5~2g/L,PH:6~10,浴溫:10~50℃,電流密度:2.5~6A/dm2 ,通電時間:20秒之鉬、鎳、鉻、鉀四元合金的電鍍浴槽中電鍍製成具鉬、鎳、鉻、鉀合金剝離層。2. Place nickel sulfate hexahydrate: 10~50g/L, sodium dihydrate molybdate: 0.5~10g/L, K 4 P 2 O 7 : 50~100g/L, CrO 3 : 0.5~2g/L , PH: 6~10, bath temperature: 10~50°C, current density: 2.5~6A/dm 2 , electrification time: 20 seconds of electroplating bath made of molybdenum, nickel, chromium and potassium quaternary alloys , nickel, chromium, potassium alloy peeling layer.

3.接著於剝離層上方施以Cu2 P2 O7 .3H2 O:10~60g/L,K4 P2 O7 :100~400g/L,PH:6~10,浴溫:10~60℃,電流密度:1~5A/dm2 ,通電時間:15秒之電鍍做為剝離層保護層。3. Next, apply Cu 2 P 2 O 7 .3H 2 O: 10~60g/L, K 4 P 2 O 7 : 100~400g/L, PH: 6~10, bath temperature: 10~ above the peeling layer. 60 ° C, current density: 1 ~ 5A / dm 2 , power-on time: 15 seconds of plating as a peeling layer protective layer.

4.再以銅濃度:50~100g/L,硫酸:90~125g/L,浴溫:40~70℃,電流密度:25A/dm2 ,通電時間:20秒施行電鍍成為厚度3μm之極薄銅箔。4. Further copper concentration: 50~100g/L, sulfuric acid: 90~125g/L, bath temperature: 40~70°C, current density: 25A/dm 2 , energization time: 20 seconds, electroplating becomes extremely thin with thickness of 3μm Copper foil.

5.再利用習知之粗化處理技術於壓合(mat)面施行銅粒子處理,然後再施以鍍鋅以及鉻酸鹽之防鏽處理與塗佈矽烷,製得以超低稜線銅箔為載體之極薄銅箔。以日本Shimadzu公司製的拉力試驗機測得載體箔與極薄銅箔結合力為10.8g/cm。5. Re-use the conventional roughening treatment technology to perform copper particle treatment on the mat surface, and then apply galvanizing and chromate anti-rust treatment and coating decane to obtain ultra-low ridge copper foil as carrier. Extremely thin copper foil. The bonding strength between the carrier foil and the ultra-thin copper foil was measured to be 10.8 g/cm by a tensile tester manufactured by Shimadzu Corporation, Japan.

由上述實施例、比較例及表一中,實施例1提高四元合金之電鍍電流密度,造成載體結合力過強無法剝離。反之,降低四元合金之電鍍電流密度則載體結合力變弱,造成載體箔與極薄銅箔間幾乎無結合力,如實施例2。比較例1的以超低稜線銅箔為載體之極薄銅箔之載體結合力5.40g/cm與實施例3之2.87g/cm相當接近,載體箔與極薄銅箔間沒有剝離性的問題,但比較例1之極薄銅箔的光澤面抗氧化能力不足,有輕微氧化現 象。From the above examples, comparative examples and Table 1, in Example 1, the plating current density of the quaternary alloy was increased, and the carrier bonding force was too strong to be peeled off. On the contrary, reducing the plating current density of the quaternary alloy weakens the carrier bonding force, resulting in almost no adhesion between the carrier foil and the ultra-thin copper foil, as in Example 2. The carrier bonding force of 5.50 g/cm of the ultra-thin copper foil with the ultra-low ridge copper foil as the carrier of Comparative Example 1 was quite close to 2.87 g/cm of Example 3, and there was no problem of peelability between the carrier foil and the ultra-thin copper foil. However, the extremely thin copper foil of Comparative Example 1 has insufficient anti-oxidation ability on the shiny side, and is slightly oxidized. Elephant.

比較例4的以超低稜線銅箔為載體之極薄銅箔係載體結合力較高,載體箔與極薄銅箔間亦沒有剝離性的問題,但其四元合金鍍液卻有渾濁沉澱的現象,對於鍍液的管理與廢水排放等問題會增加很多的處理時間以及費用。形成比較例1與比較例4的剝離層之金屬雖然皆具有剝離特性,但有抗氧化能力不足與鍍液渾濁沉澱的缺點,並不是最佳的選擇。The ultra-thin copper foil carrier with the ultra-low ridge copper foil as the carrier of Comparative Example 4 has a high bonding force, and there is no problem of peeling property between the carrier foil and the ultra-thin copper foil, but the quaternary alloy plating solution has turbid precipitation. The phenomenon of plating solution management and wastewater discharge will increase the processing time and cost. Although the metals forming the release layers of Comparative Example 1 and Comparative Example 4 all had peeling characteristics, they were insufficient in oxidation resistance and turbid precipitation of the plating solution, and were not optimally selected.

其他比較例2、3及5之形成剝離層的金屬皆有載體結合力過強而無法順利與極薄銅箔剝離的問題。本發明具四元合金的以超低稜線銅箔為載體之極薄銅箔其載體結合力低,載體箔與極薄銅箔間沒有剝離性的問題,相較於比較例1至比較例5,實施例3之四元合金具有載體結合力較低、無針孔、無鍍液混濁沉澱與廢水排放等問題,所以形成四元合金的金屬缺一不可。本發明之以超低稜線銅箔為載體之極薄銅箔的載體箔與極薄銅箔結合力低,其形成剝離層的四元合金組合之技術方案未見於先前技術,屬於首創技術。The metals forming the release layer of the other Comparative Examples 2, 3, and 5 all had a problem that the carrier bonding force was too strong to be smoothly peeled off from the extremely thin copper foil. The ultra-thin copper foil with the ultra-low ridge copper foil as the carrier of the quaternary alloy has low carrier bonding force, and there is no problem of peeling property between the carrier foil and the ultra-thin copper foil, compared with the comparative example 1 to the comparative example 5. The quaternary alloy of the third embodiment has the problems of low carrier binding force, no pinhole, no turbid sedimentation of the plating solution and waste water discharge, so the metal forming the quaternary alloy is indispensable. The carrier foil of the ultra-thin copper foil with the ultra-low ridge copper foil as the carrier of the present invention has low bonding force with the ultra-thin copper foil, and the technical scheme of forming the quaternary alloy combination of the peeling layer is not found in the prior art, and belongs to the first technology.

本發明實施例的以超低稜線銅箔為載體之極薄銅箔,對於環境忍受性相當優異,載體剝離強度低具有耐高溫、耐濕氣、耐酸、耐鹼等特性,在高溫的熱壓環境下載體箔與極薄銅箔仍舊擁有優異的剝離特性,例如以樹脂基材做高溫熱壓合,壓合後撕除載體箔,觀察極薄銅箔光澤面無被氧化變色,對於環境忍受性相當優異;常溫結合力表現亦甚優異如表一;與各種高玻璃轉移溫度之基材做熱壓合,壓合後載體箔與極薄銅箔間的結合力亦是相當優異,如表二及第3圖所示,可見載體箔與極薄銅箔結合力甚佳。The ultra-thin copper foil with ultra-low ridge copper foil as the carrier of the embodiment of the invention has excellent environmental tolerance, low carrier peeling strength, high temperature resistance, moisture resistance, acid resistance and alkali resistance, and high temperature hot pressing. The environmentally-friendly body foil and the ultra-thin copper foil still have excellent peeling characteristics, for example, high-temperature thermocompression bonding with a resin substrate, peeling off the carrier foil after pressing, and observing the glossy surface of the ultra-thin copper foil without oxidative discoloration, enduring the environment The performance is quite excellent; the normal temperature bonding performance is also excellent as shown in Table 1; it is thermocompression bonded with various high glass transition temperature substrates, and the bonding strength between the carrier foil and the ultra-thin copper foil after pressing is also excellent. As shown in Fig. 2 and Fig. 3, it can be seen that the carrier foil has a good bonding force with the ultra-thin copper foil.

附註:BT=三菱瓦斯公司樹脂,Bismelaimide Triazene,雙順丁烯二酸醯亞胺- 三氮雜苯樹脂,商品名BT。Note: BT = Mitsubishi Gas Company Resin, Bismelaimide Triazene, Bisuccinimide - Triazabenzene resin, trade name BT.

NPG180IA=南亞公司無鹵素樹脂、玻璃轉移溫度(Tg)180℃、商品名NPG180IA。NPG180IA = South Asia company halogen-free resin, glass transition temperature (Tg) 180 ° C, trade name NPG180IA.

NP180=南亞公司鹵素樹脂、玻璃轉移溫度(Tg)180℃、商品名NP180。NP180 = South Asian company halogen resin, glass transition temperature (Tg) 180 ° C, trade name NP180.

本發明的以超低稜線銅箔為載體之極薄銅箔除了有優異的剝離特性與對於環境的忍受性外,蝕刻特性也相當優異,蝕刻後形成電路圖案側璧之垂直度佳,電路圖案側璧下緣無殘留,而不會產生短路或斷線等問題。此特性有助於印刷電路板的電性信賴性與品質穩定性。詳見第2圖。The ultra-thin copper foil with the ultra-low ridge copper foil as the carrier of the present invention has excellent etching characteristics and environmental resistance, and has excellent etching characteristics, and the verticality of the side pattern of the circuit pattern after etching is good, and the circuit pattern is good. There is no residue on the lower edge of the side sill, and there is no problem such as short circuit or disconnection. This feature contributes to the electrical reliability and quality stability of printed circuit boards. See Figure 2 for details.

1‧‧‧載體箔1‧‧‧Carrier foil

2‧‧‧剝離層2‧‧‧ peeling layer

3‧‧‧極薄銅箔3‧‧‧very thin copper foil

Claims (1)

一種附有載體之極薄銅箔的製造方法,包括:(1)取光澤面粗糙度在1.5μm以下且厚度介於12~70μm的超低稜線(VLP)銅箔為載體箔;(2)將步驟(1)的載體箔置入由下列a~d成分構成且PH值介於6~10的電鍍液浴槽中施予鉬-鎳-鉻-鉀四元合金剝離層的電鍍,在浴溫:0~50℃,電流密度:2.5~6A/dm2 及通電時間:20秒的電鍍條件下,使該載體箔電鍍上吸附量介於0.05~60mg/dm2 的四元合金剝離層:a. 硫酸鎳六水合物:10~50g/L,b. 鉬酸納二水合物:0.5~10g/L,c. K4 P2 O7 :50~100g/L,d. CrO3 :0.5~2g/L;(3)使用以Cu2 P2 O7 .3H2 O:10~60g/L及K4 P2 O7 :100~400g/L構成且PH值介於6~10的焦磷酸銅電鍍浴,在浴溫:10~60℃,電流密度:1~5A/dm2 及通電時間:15秒的電鍍條件下,對完成步驟(2)的載體箔的四元合金剝離層施予剝離層保護層電鍍,使該四元合金剝離層電鍍上一層剝離層保護層;(4)再使用以銅濃度:50~100g/L及硫酸濃度:90~125g/L構成且PH值介於1~12的硫酸銅電鍍浴,在浴溫:40~70℃,電流密度:10~50A/dm2 及通電時間:20秒的電鍍條件下,對完成步驟(3)的載體箔的剝離保護層施行極薄銅箔電鍍,使該剝離保護層電鍍上1~6μm厚度之極薄銅箔。A method for manufacturing an ultra-thin copper foil with a carrier, comprising: (1) taking an ultra-low ridgeline (VLP) copper foil having a gloss surface roughness of 1.5 μm or less and a thickness of 12 to 70 μm as a carrier foil; (2) The carrier foil of the step (1) is placed in a bath of a plating bath composed of the following components a to d and having a pH of 6 to 10, and the plating of the molybdenum-nickel-chromium-potassium quaternary alloy peeling layer is applied at the bath temperature. :0~50°C, current density: 2.5~6A/dm 2 and energization time: under the plating condition of 20 seconds, the carrier foil is plated with a quaternary alloy peeling layer with an adsorption amount of 0.05-60 mg/dm 2 :a Nickel sulfate hexahydrate: 10~50g/L, b. Naphthyl molybdate dihydrate: 0.5~10g/L, c. K 4 P 2 O 7 : 50~100g/L, d. CrO 3 :0.5~ 2g/L; (3) using pyrophosphate composed of Cu 2 P 2 O 7 .3H 2 O: 10~60g/L and K 4 P 2 O 7 : 100~400g/L and having a pH of 6~10 The copper plating bath is applied to the quaternary alloy peeling layer of the carrier foil of the step (2) under the plating conditions of bath temperature: 10 to 60 ° C, current density: 1 to 5 A/dm 2 and energization time: 15 seconds. The peeling layer protective layer is electroplated, and the quaternary alloy peeling layer is plated with a peeling layer protective layer; (4) reused with copper : 50 ~ 100g / L and a sulfuric acid concentration: 90 ~ 125g / L configuration and copper sulfate plating bath PH value between 1 to 12, at a bath temperature: 40 ~ 70 ℃, current density: 10 ~ 50A / dm 2, and energization Time: Under 20 seconds of plating conditions, the peeling protective layer of the carrier foil which completed the step (3) was subjected to ultra-thin copper foil plating, and the peeling protective layer was plated with an extremely thin copper foil having a thickness of 1 to 6 μm.
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* Cited by examiner, † Cited by third party
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