TWI461255B - 用於產生薄墊中的模塑窗之方法 - Google Patents
用於產生薄墊中的模塑窗之方法 Download PDFInfo
- Publication number
- TWI461255B TWI461255B TW100110367A TW100110367A TWI461255B TW I461255 B TWI461255 B TW I461255B TW 100110367 A TW100110367 A TW 100110367A TW 100110367 A TW100110367 A TW 100110367A TW I461255 B TWI461255 B TW I461255B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- layer
- recess
- hole
- adhesive layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 23
- 238000000465 moulding Methods 0.000 title description 3
- 238000005498 polishing Methods 0.000 claims description 148
- 239000010410 layer Substances 0.000 claims description 70
- 239000012790 adhesive layer Substances 0.000 claims description 40
- 229920000642 polymer Polymers 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 35
- 230000003287 optical effect Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 238000012544 monitoring process Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920002959 polymer blend Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 235000012773 waffles Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/762,175 US8393940B2 (en) | 2010-04-16 | 2010-04-16 | Molding windows in thin pads |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201143969A TW201143969A (en) | 2011-12-16 |
| TWI461255B true TWI461255B (zh) | 2014-11-21 |
Family
ID=44788545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100110367A TWI461255B (zh) | 2010-04-16 | 2011-03-25 | 用於產生薄墊中的模塑窗之方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8393940B2 (OSRAM) |
| JP (1) | JP5657775B2 (OSRAM) |
| KR (1) | KR101761389B1 (OSRAM) |
| TW (1) | TWI461255B (OSRAM) |
| WO (1) | WO2011129959A2 (OSRAM) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8562389B2 (en) * | 2007-06-08 | 2013-10-22 | Applied Materials, Inc. | Thin polishing pad with window and molding process |
| KR101602544B1 (ko) * | 2010-11-18 | 2016-03-10 | 캐보트 마이크로일렉트로닉스 코포레이션 | 투과성 영역을 포함하는 연마 패드 |
| US8535115B2 (en) * | 2011-01-28 | 2013-09-17 | Applied Materials, Inc. | Gathering spectra from multiple optical heads |
| JP5893479B2 (ja) * | 2011-04-21 | 2016-03-23 | 東洋ゴム工業株式会社 | 積層研磨パッド |
| US9597769B2 (en) * | 2012-06-04 | 2017-03-21 | Nexplanar Corporation | Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer |
| ITTV20120147A1 (it) * | 2012-07-30 | 2014-01-31 | Hausbrandt Trieste 1892 Spa | Capsula per la preparazione di bevande |
| US8961266B2 (en) * | 2013-03-15 | 2015-02-24 | Applied Materials, Inc. | Polishing pad with secondary window seal |
| US10058970B2 (en) | 2014-05-02 | 2018-08-28 | 3M Innovative Properties Company | Interrupted structured abrasive article and methods of polishing a workpiece |
| US9868185B2 (en) * | 2015-11-03 | 2018-01-16 | Cabot Microelectronics Corporation | Polishing pad with foundation layer and window attached thereto |
| US10213894B2 (en) * | 2016-02-26 | 2019-02-26 | Applied Materials, Inc. | Method of placing window in thin polishing pad |
| EP3478447A4 (en) * | 2016-06-29 | 2020-03-11 | Saint-Gobain Abrasives, Inc. | ABRASIVE TOOLS AND TRAINING METHODS |
| TWI629297B (zh) * | 2016-07-05 | 2018-07-11 | 智勝科技股份有限公司 | 研磨層及其製造方法以及研磨方法 |
| US10259099B2 (en) * | 2016-08-04 | 2019-04-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tapering method for poromeric polishing pad |
| KR20190039171A (ko) * | 2016-08-31 | 2019-04-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 환형 플래튼 또는 연마 패드를 갖는 연마 시스템 |
| KR101947877B1 (ko) * | 2016-11-24 | 2019-02-13 | 두산중공업 주식회사 | 병렬 복열 방식의 초임계 이산화탄소 발전 시스템 |
| KR101904322B1 (ko) | 2017-01-23 | 2018-10-04 | 에스케이씨 주식회사 | 연마패드 및 이의 제조방법 |
| TWI650202B (zh) * | 2017-08-22 | 2019-02-11 | 智勝科技股份有限公司 | 研磨墊、研磨墊的製造方法及研磨方法 |
| US10569383B2 (en) | 2017-09-15 | 2020-02-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Flanged optical endpoint detection windows and CMP polishing pads containing them |
| US11325221B2 (en) * | 2017-11-16 | 2022-05-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with multipurpose composite window |
| JP7134005B2 (ja) * | 2018-07-26 | 2022-09-09 | 富士紡ホールディングス株式会社 | 研磨パッド |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08197434A (ja) * | 1995-01-23 | 1996-08-06 | Sony Corp | 研磨用パッド |
| TW200510470A (en) * | 2003-04-22 | 2005-03-16 | Jsr Corp | Polishing pad and method of polishing a semiconductor wafer |
| TW200906543A (en) * | 2007-06-08 | 2009-02-16 | Applied Materials Inc | Thin polishing pad with window and molding process |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| JP3431115B2 (ja) * | 1995-03-28 | 2003-07-28 | アプライド マテリアルズ インコーポレイテッド | ケミカルメカニカルポリシングの操作をインシチュウでモニタするための装置及び方法 |
| US5738574A (en) | 1995-10-27 | 1998-04-14 | Applied Materials, Inc. | Continuous processing system for chemical mechanical polishing |
| US6994607B2 (en) * | 2001-12-28 | 2006-02-07 | Applied Materials, Inc. | Polishing pad with window |
| US6358130B1 (en) * | 1999-09-29 | 2002-03-19 | Rodel Holdings, Inc. | Polishing pad |
| US6685537B1 (en) | 2000-06-05 | 2004-02-03 | Speedfam-Ipec Corporation | Polishing pad window for a chemical mechanical polishing tool |
| EP1252973B1 (en) | 2001-04-25 | 2008-09-10 | JSR Corporation | Polishing pad for a semiconductor wafer which has light transmitting properties |
| JP2003273046A (ja) * | 2002-03-13 | 2003-09-26 | Nihon Micro Coating Co Ltd | 研磨装置及びテープ並びに方法 |
| US6875077B2 (en) * | 2002-03-18 | 2005-04-05 | Raytech Innovative Solutions, Inc. | Polishing pad for use in chemical/mechanical planarization of semiconductor wafers having a transparent window for end-point determination and method of making |
| JP2008044103A (ja) * | 2003-04-09 | 2008-02-28 | Jsr Corp | 研磨複層体および半導体ウエハの研磨方法 |
| JP2004343090A (ja) * | 2003-04-22 | 2004-12-02 | Jsr Corp | 研磨パッドおよび半導体ウェハの研磨方法 |
| US6986705B2 (en) * | 2004-04-05 | 2006-01-17 | Rimpad Tech Ltd. | Polishing pad and method of making same |
| CN100424830C (zh) * | 2004-04-23 | 2008-10-08 | Jsr株式会社 | 用于抛光半导体晶片的抛光垫、层叠体和方法 |
| JP4904027B2 (ja) | 2005-08-10 | 2012-03-28 | ニッタ・ハース株式会社 | 研磨パッド |
| US7179151B1 (en) * | 2006-03-27 | 2007-02-20 | Freescale Semiconductor, Inc. | Polishing pad, a polishing apparatus, and a process for using the polishing pad |
-
2010
- 2010-04-16 US US12/762,175 patent/US8393940B2/en active Active
-
2011
- 2011-03-22 WO PCT/US2011/029468 patent/WO2011129959A2/en not_active Ceased
- 2011-03-22 KR KR1020127030038A patent/KR101761389B1/ko active Active
- 2011-03-22 JP JP2013504907A patent/JP5657775B2/ja active Active
- 2011-03-25 TW TW100110367A patent/TWI461255B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08197434A (ja) * | 1995-01-23 | 1996-08-06 | Sony Corp | 研磨用パッド |
| TW200510470A (en) * | 2003-04-22 | 2005-03-16 | Jsr Corp | Polishing pad and method of polishing a semiconductor wafer |
| TW200906543A (en) * | 2007-06-08 | 2009-02-16 | Applied Materials Inc | Thin polishing pad with window and molding process |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013525124A (ja) | 2013-06-20 |
| WO2011129959A3 (en) | 2012-04-19 |
| JP5657775B2 (ja) | 2015-01-21 |
| KR101761389B1 (ko) | 2017-07-25 |
| US20110256818A1 (en) | 2011-10-20 |
| TW201143969A (en) | 2011-12-16 |
| WO2011129959A2 (en) | 2011-10-20 |
| US8393940B2 (en) | 2013-03-12 |
| KR20130088744A (ko) | 2013-08-08 |
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