TWI460300B - Film formation apparatus - Google Patents

Description

Film forming device

The invention relates to a film formation by sputtering in a single chamber and film formation by plasma chemical vapor deposition (CVD) in a single chamber. Film forming device.

For example, reflectors and meters of headlamps of automobiles are injection molded plastic articles. In addition, for the purpose of imparting a mirror finish and a metallic texture, a metal such as aluminum is used as a target to form a film by sputtering. Next, after film formation by sputtering, in order to prevent oxidation of the metal film, film formation such as a ruthenium oxide protective film is performed by plasma CVD.

In this case, the film formed by injection molding from the injection molding machine is temporarily stocked in a certain amount, and then sputtering or plasma CVD film formation is performed in other factories. In such a case, in order to perform high-quality film formation, it is necessary to sufficiently evacuate and adsorb the adsorbed gas such as moisture adhering to the surface of the workpiece. Therefore, in the past, a plurality of workpieces are collectively disposed in the chamber, and the chamber is fully filled by an ultra-high vacuum pump such as an oil diffusion pump, a turbo molecular pump, or a low-temperature air pump. The vacuum evacuation removes the adsorbed gas such as moisture and then performs a film forming operation. Therefore, not only a large device is required, but also the processing takes a long time.

Further, the workpiece after the sputtering film formation is transferred to another film forming apparatus, and is electrically operated by a monomer gas such as HMDSO (hexamethyldioxane) or the like in the chamber of the film forming apparatus. The slurry CVD is used to form a film of the protective film on the surface after the sputtering film formation.

Further, there has been proposed a device which performs sputtering film formation and composite film formation or polymerization film formation in the same chamber. Patent Document 1 discloses a film forming apparatus in which a sputtering electrode, a composite film formation or a polymerization film formation electrode are disposed at a position separated by a predetermined distance. In this film forming apparatus, first, a workpiece is placed opposite to a sputtering electrode, an inert gas is introduced into the chamber, and then a direct current is applied to the sputtering electrode to perform sputtering. Next, the workpiece is moved to face the composite film formation or the polymerization film formation electrode, and a monomer gas such as HMDSO is introduced into the chamber, and then a radio frequency voltage is applied to the composite film formation or the polymerization film formation electrode to perform compounding. Film formation or polymerization into a film. In the film forming apparatus described in Patent Document 1, a shutter is disposed on an unused target.

Further, Patent Document 2 discloses a film forming apparatus having a combined electrode that serves as both an electrode for sputtering and an electrode for plasma polymerization. In the film forming apparatus, first, an inert gas is introduced into the chamber, and then DC or RF is applied to the combined electrode to perform sputtering, and then a monomer gas such as HMDSO is introduced into the chamber, and RF voltage is applied to the combined electrode. The plasma is polymerized to form a film.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-58048

[Patent Document 2] Japanese Patent Laid-Open No. Hei 10-195651

According to the film forming apparatus described in Patent Document 1, it is possible to perform sputtering film formation, composite film formation, or polymerization film formation in the same chamber. However, there is a problem in that the sputtering film formation and the composite film formation or the polymerization film formation are performed at different positions, so that the size of the chamber is increased, the device cost is increased, and not only the pressure reduction in the chamber, Gas exchange also takes time.

On the other hand, according to the film forming apparatus described in Patent Document 2, since the apparatus can be downsized, the cost of the apparatus can be reduced and the efficiency of the film forming process can be improved. On the other hand, plasma polymerization is performed after the film is formed by sputtering. At the time of film formation, there is a problem that the electrode is contaminated by the polymerization deposit. When such contamination of the polymerization deposit occurs, there is a problem that the performance of the sputtering film formation is lowered when the next sputtering film is formed. Therefore, in the film forming apparatus described in Patent Document 2, there is a problem that it is necessary to perform cleaning by performing RF sputtering or the like after performing plasma polymerization film formation and performing sputtering film formation by direct current. Electrode surface.

The present invention has been made to solve the above problems, and an object of the invention is to provide a film forming apparatus which can prevent contamination of an electrode even when a film is formed by sputtering and plasma CVD using the same electrode in the same chamber. Effectively performing sputtering film formation and plasma CVD film formation.

The invention described in claim 1 is a film forming apparatus which performs sputtering film formation and plasma CVD film formation on a workpiece in a single chamber, and is characterized by comprising: an electrode having a target material; a radio frequency power source, the electrode Shi a radio frequency voltage; an inert gas supply unit that supplies an inert gas to the chamber; a material gas supply unit that supplies a material gas into the chamber; a decompression unit that decompresses the chamber; and a baffle mechanism that includes a baffle The baffle is switchable between a state in which the target material is covered and a state in which the target material is opened in a state of being in contact with the target material; and the baffle is opened when the sputtering is performed. When the plasma CVD film is formed, the target material is covered by the baffle.

The invention of claim 2 is the invention of claim 1, wherein the electrode is a magnetron electrode.

The invention according to claim 3 is the invention of claim 2, wherein the baffle plate is mainly composed of a conductor.

The invention according to claim 4 is the invention according to claim 1 or 2, wherein the baffle is mainly composed of a material having an element common to the film formed by the CVD film formation.

The invention according to claim 1 or 2, wherein the baffle plate is mainly formed of a conductor and a surface formed on the workpiece side of the conductor and having a film formed by the CVD. The material of the elements common to the film.

The invention of claim 6 is the invention according to any one of claims 1 to 5, wherein the baffle plate is mainly composed of a non-magnetic body.

The invention of claim 7 is the invention according to any one of claims 1 to 5, wherein at least a part of the baffle plate is mainly composed of a magnetic body.

The invention of claim 8 is the invention according to any one of claims 1 to 5, further comprising a direct current power source that applies the electrode to the electrode DC voltage.

The invention according to any one of claims 1 to 8, wherein the shutter mechanism includes a pair of shutters and a swing shaft that connects the pair of shutters to the chamber The oscillating arm has a structure in which the pair of baffles are opened in a direction in which they are different from each other in the direction from the center to the both sides.

The invention according to claim 9 is characterized in that the front end portions of the pair of baffles are in contact with each other on an abutting surface facing a direction intersecting the electrode from the direction of the workpiece. .

The invention according to any one of claims 1 to 8, wherein the shutter mechanism is provided with an arm that is centered on a swing axis that connects the shutter to the chamber. While swinging, the baffle is configured to swing relative to the arm.

The invention of claim 12 is the invention according to claim 11, wherein the arm member includes a pair of arm members and a pair of plate springs, and the pair of arm members extend in parallel with the swing axis The shafts are pivotable to each other, and the pair of leaf springs are attached to one of the pair of arm members, and the other arm member is clamped to position the pair of arm members It is linear.

The invention according to any one of claims 1 to 8, wherein the shutter mechanism includes an arm that swings around a swing shaft that connects the shutter to a chamber, and An insulating member is disposed between the arm and the baffle, and the insulating member is formed to prevent the arm from forming a film on the baffle and the baffle when the sputter is formed. unit.

[Effects of the Invention]

According to the invention of claim 1, even when the same electrode is used in the same chamber to perform film formation by sputtering and plasma CVD, sputtering can be effectively performed by the action of the baffle without contaminating the electrode. Film formation and plasma CVD film formation.

According to the invention of claim 2, by using a magnetron electrode, the plasma is sealed in the vicinity of the target to increase the plasma density, thereby increasing the sputtering speed.

According to the invention of claim 3, since the baffle is mainly composed of a conductor, the baffle can be effectively functioned as an electrode for plasma CVD.

According to the invention of claim 4, since the baffle is mainly composed of a material having an element common to the film formed by the CVD film formation, it is possible to prevent impurities from the baffle material from entering the film formation region during plasma CVD.

According to the invention of claim 5, since the baffle is mainly composed of a material of a conductor and an element having a film formed by film formation by CVD, the electrode can be effectively maintained by the conductor, and the impurity can be prevented from being formed. The mixing of the membrane area.

According to the invention of claim 6, by using the non-magnetic baffle, even when the plasma CVD film is formed, the magnetron electrode can be efficiently obtained when the baffle covers the target material of the electrode. The magnetron discharge acts to increase the film formation speed of the plasma CVD.

According to the invention of claim 7, due to at least a part of the baffle Mainly composed of a magnetic material, it is possible to control the plasma density or plasma distribution during plasma CVD, and to increase the film thickness and film quality parameters for controlling plasma CVD film formation.

According to the invention of claim 8, since the DC power supply is further provided, when a material capable of DC sputtering is used, sputtering film formation can be performed more quickly.

According to the invention of claim 9, since the pair of flaps are configured to be opened by swinging from the center toward the sides in different directions, the space required for opening and closing the flap can be reduced, thereby The miniaturization of the chamber can be achieved.

According to the invention of claim 10, the front end portions of the pair of baffles are in contact with each other in abutting direction in a direction intersecting the direction from the electrode to the workpiece, so that the electrode can be effectively prevented from being formed by plasma CVD. The gap between the pair of baffles is contaminated.

According to the inventions of the eleventh and twelfth aspects, the baffle is swingably disposed with respect to the arm, so that the baffle can be in close contact with the electrode provided with the target material. Therefore, contamination of the electrode can be prevented more reliably, and the baffle can be more appropriately functioned as an electrode for plasma CVD.

According to the invention of claim 13, the arm and the shutter can be insulated by the action of the insulating member. Further, by the action of the crotch portion of the insulating member, it is possible to prevent the formation of a film throughout the arm and each of the baffles and the connection of the arms to the chamber during the film formation of the conductor. The baffle connected to the electrode is turned on, causing the chamber to be shorted to the electrode.

Hereinafter, embodiments of the present invention will be described based on the drawings. First, a film forming system to which the film forming apparatus 1 of the present invention is applied will be described. Fig. 1 is a schematic view showing a film forming system to which a film forming apparatus of the present invention is applied.

This film forming system includes an injection molding machine 2, a film forming apparatus 1 of the present invention, and a conveying device 3 that conveys the workpiece W from the injection molding machine 2 to the film forming apparatus 1.

The workpiece W is held by a robot 4 of the conveying device 3 and conveyed to the film forming apparatus 1 which is formed by injection molding in the injection molding machine 2. The film forming apparatus 1 is provided with a chamber 10 mainly composed of a main body 11 and an opening and closing unit 12. The workpiece W conveyed by the conveying device 3 is placed on the workpiece mounting portion 13 attached to the opening and closing portion 12 of the film forming apparatus 1 by the robot 4 . Then, the workpiece W is placed in the chamber 10 of the film forming apparatus 1 by moving the opening and closing unit 12 toward the main body 11 side.

According to such a film forming system, the film forming apparatus 1 can be placed in the vicinity of the injection molding machine 2, and the workpiece W that is injection molded by the injection molding machine 2 can be directly carried into the film forming apparatus 1. Therefore, the workpiece W can be transported to the film forming apparatus 1 before the adsorbed gas such as moisture adheres to the workpiece W after the injection molding, and the high vacuum pump for removing the adsorbed gas such as moisture, which is previously necessary, can be omitted. Therefore, low cost, low power consumption, and film forming work can be performed efficiently.

Next, a specific configuration of the film forming apparatus 1 of the present invention will be described. FIG. 2 is a schematic view of the film forming apparatus 1 according to the first embodiment of the present invention, and FIG. 3 is an enlarged view of the vicinity of the electrode 20 of the film forming apparatus 1.

As described above, the film forming apparatus 1 includes the chamber 10 mainly composed of the main body 11 and the opening and closing unit 12. The opening and closing unit 12 is movable between a loading position where the workpiece W is carried in and a closed position of the chamber 10 that is sealed with the main body 11. A workpiece mounting portion 13 on which the workpiece W is placed is attached to the opening and closing portion 12. Further, as shown in FIG. 3, the film forming apparatus 1 includes an electrode 20 mainly including an electrode portion 21 having a magnet 22 therein and a target material 23. The electrode 20 is attached to the body 11 of the chamber by insulating the edge member 14. Further, the body 11 constituting the chamber 10 is grounded by the ground portion 19.

The electrode 20 is connected to a filter (Filter, F) 42 and a direct current (DC) 41 via a switch 45. Further, the electrode 20 is connected to a matching box (MB) 43 and a radio frequency (RF) generator 44 via a switch 46. Further, a shutter mechanism including a pair of shutters 31 is disposed below the target material 23 of the electrode 20. Further, as the radio frequency power source 44, for example, a radio frequency of about several tens of MHz (megahertz) can be used. Here, the radio frequency described in the specification means a frequency of 20 kHz (kilohertz) or more.

Figure 4 is an enlarged view of the shutter mechanism.

In the shutter mechanism, the shutter 31 is supported by an arm 39 that swings around the swing shaft 15 of the body 11 coupled to the chamber 10. The arm member 39 includes a pair of arm members 32 and 33 and a pair of leaf springs 35, and the pair of arm members 32 and 33 are swingable with respect to a shaft 34 extending parallel to the swing shaft 15; a pair of leaf springs 35 by means of a screw The nail 37 is attached to one of the pair of arm members 32, 33, and the other arm member 33 is clamped so that the posture of the pair of arm members 32, 33 is linear. The arm member 32 swings freely around the swing shaft 15 coupled to the body 11. Further, the baffle 31 is mainly composed of a material such as a metal conductor and a non-magnetic material. As the material of the baffle 31, for example, aluminum can be used.

In the shutter mechanism, each of the arms 39 swings around the swing shaft 15, whereby the pair of shutters 31 are closed positions of the target material 23 covering the electrodes 20, which are indicated by solid lines in FIGS. 2 and 3. And the swing position between the release positions of the target material 23 of the open electrode 20 indicated by a virtual line in FIGS. 2 and 3. In other words, the pair of flaps 31 have a structure of a left-right split type, and the pair of flaps 31 swing from the center toward the both sides from the closed position, thereby being opened.

As shown in enlarged view in FIG. 3, the front end portions of the pair of shutters 31 abut each other on the abutting surface 38. In this state, the abutting surface 38 faces a direction orthogonal to the direction from the electrode 20 toward the workpiece W, and becomes a surface parallel to the surface of the target material 23 (that is, a surface thereof and a direction from the electrode 20 toward the workpiece W). Orthogonal). Therefore, when the pair of baffles 31 are disposed at the closed position, the abutting faces 38 can be completely in close contact with each other. Thereby, as described below, when the plasma is formed into a film, the phenomenon that the target material 23 of the electrode 20 is contaminated by the polymerization deposit can be effectively prevented.

Further, in the shutter mechanism, as described above, the arm member 39 includes a pair of arm members 32 and 33 that are swingable with each other, and a pair of plates for linearly changing the postures of the pair of arm members 32 and 33. Spring 35. Therefore, a pair of baffles 31 can swing in the oblique direction centering on the shaft 34 parallel to the swing shaft 15. Thereby, even when the lower surface of the target material 23 of the electrode 20 and the upper surface of the baffle 31 are not completely parallel, the baffle 31 and the arm can be pressed by pressing the baffle 31 against the target material 23. The member 33 is inclined together with the force of the leaf spring 35, so that the lower surface of the target material 23 can be completely in close contact with the upper surface of the shutter 31.

Further, in the shutter mechanism, between the arm member 33 and the shutter 31, an insulating member 36 for insulating the arm member 33 and the shutter 31 and preventing splashing is disposed. A film extending over the arm member 33 and the baffle 31 is formed when the film is formed.

Fig. 5 is an enlarged view of the vicinity of the insulating member 36 of the shutter mechanism.

An insulating member 36 is attached to the end edge of the arm member 33 of the arm member 39 constituting the shutter mechanism. The insulating member 36 has a shape in which the crotch portion 48 is formed at both ends and has a substantially U-shaped cross section. A voltage is applied to the workpiece W between the electrode 20 and the chamber 10. Therefore, it is necessary to previously insulate the arm 39 connected to the body 11 of the chamber 10 and the baffle 31 abutting against the electrode 20.

At this time, in the case of the sputtering film formation described later, a film including the target material 23 is formed not only on the workpiece W but also on the surfaces of the baffle 31 and the arm 39. When the film is a conductor, if the film is formed over the arm member 33 of the arm 39 and the baffle 31, the arm 39 connected to the chamber 10 and the baffle 31 abutting against the electrode 20 are formed. Turning on causes the chamber 10 to be shorted to the electrode 20. However, as shown in FIG. 5, since the flange portion 48 is formed on the insulating member 36, even if the surface of the shutter 31 or the arm 39 is formed with the target material 23 In the case of the film 100, the film A is not formed in the region A inside the crotch portion 48, so that the film covering the arm 39 and the baffle 31 can be effectively prevented from being formed by sputtering.

Referring again to FIG. 2, the body 11 constituting the chamber 10 is connected to the supply portion 53 of an inert gas such as argon gas via the opening and closing valve 51 and the flow rate adjusting valve 52. Further, the main body 11 constituting the chamber 10 is connected to a supply portion 56 of a material gas such as HMDSO or hexamethyldisilane (HMDS) via the opening and closing valve 54 and the flow rate adjusting valve 55. Further, the body 11 constituting the chamber 10 is connected to a dry vacuum pump 58 and a mechanical booster pump 57.

Next, the film formation operation of the film formation apparatus 1 having the above configuration will be described. When the film forming operation is performed by the film forming apparatus 1, as shown in FIG. 1, the workpiece W formed by injection molding in the injection molding machine 2 is held by the robot 4 of the conveying device 3, and placed thereon. It is attached to the workpiece mounting portion 13 of the opening and closing portion 12 of the film forming apparatus 1. Then, by moving the opening and closing portion 12 toward the main body 11 side, the workpiece W is placed at a position facing the electrode 20 in the chamber 10 of the film forming apparatus 1.

In this state, the pressure in the chamber 10 is reduced to 0.1 Pa (PASCAL) to about 5 Pa. At this time, first, the inside of the chamber 10 is quickly depressurized by the dry vacuum pump 58, and the inside of the chamber 10 is set to a high vacuum using a mechanical booster pump 57. Then, the pair of baffles 31 are disposed in the release position indicated by the virtual lines in FIGS. 2 and 3 by the shutter mechanism. Further, when the required vacuum pressure is obtained by the dry vacuum pump 58, the mechanical booster pump 57 may be omitted.

Then, by opening the on-off valve 51, an inert gas such as argon gas is supplied from the supply portion 53 of the inert gas into the chamber 10, and the degree of vacuum in the chamber 10 is 0.1 Pa to 5 Pa, so that the chamber 10 is inside. Filled with inert gas. Next, a DC voltage is applied to the electrode 20 from the DC power source 41 via the filter 42 by turning off the switch 45; or a RF voltage is applied to the electrode 20 from the RF power source 44 via the matching box 43 by turning off the switch 46. Thereby, a thin film of the target material 23 is formed on the surface of the workpiece W by sputtering.

Further, in the case where a DC voltage is applied to the electrode 20, when the target material 23 is made of a material capable of DC sputtering, sputtering film formation can be performed more quickly. However, the DC power source 41 and the filter 42 may be omitted, and sputtering may be performed only by the RF power source 44.

At this time, in the film forming apparatus 1 of the present invention, by using a magnetron electrode in which the magnet 22 is disposed in the electrode 20, the plasma is sealed in the vicinity of the target material 23 to increase the plasma density, thereby improving the plasma density. Sputtering speed.

When the sputtering film formation is completed by the above steps, plasma polymerization is performed to form a film. The plasma polymerization is one of chemical vapor CVD (Chemical Vapor Deposition). In the case of performing plasma polymerization, the inside of the chamber 10 is depressurized to about 0.1 Pa to 5 Pa. Then, the pair of baffles 31 are disposed in the closed position indicated by the solid lines in FIGS. 2 and 3 by the shutter mechanism.

Then, the raw material gas is supplied from the supply unit 56 of the raw material gas into the chamber 10 by the open/close valve 54, and the chamber 10 is filled with the material gas so that the degree of vacuum in the chamber 10 becomes 0.1 Pa to 10 Pa. . Next, the electrode 20 is connected from the RF power source 44 via the matching box 43 by closing the switch 46. Apply RF voltage. At this time, the baffle 31 and the electrode 20 function together as an electrode for plasma polymerization, and plasma polymerization is performed to form a film. Thereby, a film of the material gas is deposited on the surface of the workpiece W by plasma polymerization.

In this case, in the film forming apparatus 1 of the present invention, by using the non-magnetic baffle 31, even when the target material 23 of the electrode 20 is covered by the baffle 31 at the time of plasma polymerization film formation, The magnetron discharge of the magnet 22 can be obtained. Therefore, even when the plasma is polymerized into a film, the film formation speed can be increased.

Further, in the film forming apparatus 1 of the present invention, as described above, the lower surface of the target material 23 by the leaf spring 35 is completely in close contact with the upper surface of the baffle 31 including the conductor, so that the film can be blocked. The plate 31 is integrated with the electrode 20 to effectively function as an electrode for plasma polymerization, and the target material 23 of the electrode 20 is completely closed, thereby effectively preventing contamination thereof. Further, since the baffle 31 is a conductor, even if the target material 23 is reduced by continuously performing sputtering film formation, the state of the polymerization film formation can be maintained constant. In other words, in this case, regardless of whether or not the target material 23 is a conductive material such as a metal, as long as the baffle 31 is a conductor, the baffle 31 and the target material 23 are in contact with each other in a completely close contact state. The voltage on the surface side (the side of the workpiece W) is uniform, so that the film formation state can be maintained constant.

Further, in the film forming apparatus 1, between the arm member 33 and the baffle 31, an insulating member 36 for preventing formation of the entire member 33 and the baffle 31 during sputtering is prevented. The film 100 can prevent the chamber 10 and the electrode 20 from being short-circuited by the conduction of the arm 39 connected to the chamber 10 and the shutter 31 abutting against the electrode 20.

Further, in the film forming apparatus 1, as described above, the front end portions of the pair of shutters 31 are in contact with each other on the abutting surface 38, and the abutting surface 38 is oriented in the direction from the electrode 20 toward the workpiece W. The direction of the handover. Therefore, when the pair of flaps 31 are disposed at the closed position, the abutting surfaces 38 can be completely in close contact with each other. Thereby, when the plasma is formed into a film, the phenomenon that the target material 23 of the electrode 20 is contaminated by the polymerization deposit can be effectively prevented.

6(a) to 6(d) are explanatory views showing various front end shapes of the baffle 31.

As shown in FIG. 6(a), when the front end portion of the pair of shutters 31 faces the direction from the electrode 20 toward the workpiece W, when the shutter 31 is moved from the closed position to the release position, in order to avoid both of the stops For the interference of the plate 31, a gap must be provided between the two baffles 31. Therefore, due to this gap, when the plasma is polymerized into a film, the target material 23 of the electrode 20 is contaminated by the polymerization deposit.

On the other hand, as shown in FIG. 3 and FIG. 6( b ), the distal end portions of the pair of baffles 31 abut each other on the abutting surface 38 in a direction orthogonal to the direction from the electrode 20 toward the workpiece W. In the case of this, the occurrence of such a gap can be prevented.

Further, as shown in FIG. 6(c), a configuration may be adopted in which the front end portion of one of the shutters 31 has a shape covering the other shutter 31, and the front end portions of the shutters 31 are oriented toward each other. The electrodes 20 are in contact with each other on the abutting faces in the direction orthogonal to the direction of the workpiece W. Further, as shown in FIG. 6(d), the gap can be similarly prevented in the case where the following configuration is employed, that is, the tip end portion of the pair of shutters 31 faces in the direction from the electrode 20 toward the workpiece W. The abutting faces that are inclined in the direction of intersection abut each other.

Further, in the above embodiment, the material of the baffle 31 is a conductor. However, the material of the baffle 31 may be other than a conductor. In the case where it is convenient to use such a material, it is also possible to perform film formation by sputtering and plasma CVD.

Further, the material of the baffle 31 may be a material having an element common to a film formed by plasma polymerization film formation. As described above, when a material having a film composition similar to that formed by plasma polymerization is used, it is possible to prevent impurities from the material of the baffle 31 from being mixed into the film formation region during plasma polymerization. In this case, for example, when HMDSO or HMDS is used as a material gas to form a ruthenium oxide film, ruthenium oxide may be used as the baffle 31. Further, for example, in the case of forming a diamond-like carbon (DLC) film, a carbon material may be used as the baffle 31. In this case, since the shutter 31 and the target material 23 are in contact with each other in a completely close contact state, contamination of the target material 23 can be preferably prevented.

In addition, the baffle 31 is formed of a material including a conductor and a surface formed on the surface of the workpiece W on the workpiece W and having an element common to the film formed by CVD. Fig. 7 is an explanatory view showing a configuration of a baffle 31 of the embodiment.

The baffle 31 shown in FIG. 7 includes a conductor 31a and a material 31b. The material 31b is formed on the lower surface of the conductor 31a (the surface on the workpiece W side) and has an element common to the film formed by CVD. In the case of adopting such a configuration, the electrode function can be effectively maintained by the conductor 31a, and the incorporation of impurities into the film formation region can be prevented.

Further, in the above-described embodiment, the object including the non-magnetic material is used as the baffle 31. However, as the baffle 31, an object in which a part or all of the material is a magnetic body may be used. 8(a) to 8(b) are explanatory views showing the configuration of the baffle 31 of the embodiment.

The entire baffle 31 shown in Fig. 8(a) is mainly composed of a magnetic body. In the case of such a configuration, the effect of the magnetron discharge of the magnet 22 can be adjusted by adjusting the thickness of the magnetic body constituting the baffle 31 or the like. Further, the baffle 31 shown in FIG. 8(b) has a configuration in which a magnetic body 31d is attached to the lower surface of the non-magnetic body 31c. In the case of adopting such a configuration, the magnetic field distribution can be adjusted by adjusting the thickness, shape, arrangement, and the like of the magnetic body 31d.

In any case of FIG. 8(a) and FIG. 8(b), the plasma density and the plasma distribution during plasma polymerization can be controlled by controlling the influence of the magnetic field, thereby increasing the film formation for controlling plasma polymerization. The film thickness of the polymer film and the parameters of the film quality.

Next, other embodiments of the present invention will be described. FIG. 9 is an enlarged view of the vicinity of the electrodes 20a and 20b of the film forming apparatus 1 according to the second embodiment of the present invention. It is to be noted that the same members as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

In this embodiment, a pair of electrodes 20a and 20b having the same configuration as that of the electrode 20 of the first embodiment are disposed on the upper portion of the body 11 of the chamber 10, and the electrodes 20a and 20b are disposed. Connected to the LF power supply 49. Here, the LF power source 49 is one type of radio frequency power source, for example, a radio frequency that generates a frequency of 20 kHz to 100 kHz.

When the sputtering film formation is performed in the film formation apparatus 1 of the second embodiment, the pair of shutters 31 are disposed at the release position indicated by the imaginary line in FIG. 9 as in the first embodiment. Further, in the same manner as in the first embodiment, the chamber 10 is filled with an inert gas such as argon gas. Next, a voltage having a phase opposite to each other is alternately applied to the pair of electrodes 20a and 20b by the LF power source 49. Since the argon ions in the plasma are cations, the target material of the negative potential is sputtered. That is, the sputtering phenomenon occurs alternately between the electrode 20a and the electrode 20b.

On the other hand, when the plasma deposition film formation is performed in the film forming apparatus 1 of the second embodiment, the pair of shutters 31 are disposed in the closed position indicated by the solid line in FIG. 9 as in the first embodiment. on. Further, the chamber 10 is filled with the material gas. Next, a voltage is applied to the pair of electrodes 20a and 20b by the LF power source 49. Thereby, the baffle 31 and the electrodes 20a and 20b function together as an electrode for plasma polymerization, and plasma polymerization can be performed to form a film.

In the film forming apparatus 1 of the second embodiment, only the LF power source 49 is used, and it is not necessary to use the RF power source 44 and the matching box 43, so that the apparatus can be manufactured at low cost. Further, even when a polymerized deposit adheres to the target material 23, when the sputtering is performed using the LF power source 49, the cleaning effect of the target material can be achieved while sputtering.

1‧‧‧ film forming device

2‧‧‧Injection molding machine

3‧‧‧Transporting device

4‧‧‧ Robot

10‧‧‧ chamber

11‧‧‧Ontology

12‧‧‧Opening and closing department

13‧‧‧ workpiece placement

14, 36‧‧‧Insulating components

15‧‧‧Swing axis

19‧‧‧ Grounding Department

20, 20a, 20b‧‧‧ electrodes

21‧‧‧Electrode

22‧‧‧ Magnet

23‧‧‧ Target material

31‧‧‧Baffle

31a‧‧‧ Conductor

31b‧‧‧Material

31c‧‧‧Non-magnetic body

31d‧‧‧Magnetic body

32, 33‧‧‧ arm components

34‧‧‧Axis

35‧‧‧ leaf spring

37‧‧‧ screws

38‧‧‧Abutment

39‧‧‧arm

41‧‧‧DC power supply

42‧‧‧ filter

43‧‧‧match box

44‧‧‧RF power supply

45, 46‧‧‧ switch

48‧‧‧檐

49‧‧‧LF power supply

51, 54‧‧‧Opening and closing valve

52, 55‧‧‧ flow adjustment valve

53‧‧‧Supply of inert gas

56‧‧‧Material gas supply department

57‧‧‧Mechanical booster pump

58‧‧‧Dry vacuum pump

100‧‧‧ film

A‧‧‧ area

W‧‧‧Workpiece

Fig. 1 is a schematic view showing a film formation system of a film formation apparatus 1 to which the present invention is applied.

FIG. 2 is a schematic view of the film formation apparatus 1 according to the first embodiment of the present invention.

3 is an enlarged view of the vicinity of the electrode 20 of the film forming apparatus 1 according to the first embodiment of the present invention.

Figure 4 is an enlarged view of the shutter mechanism.

Fig. 5 is an enlarged view of the vicinity of the insulating member 36 of the shutter mechanism.

6(a) to 6(d) are explanatory views showing various front end shapes of the baffle 31.

Fig. 7 is an explanatory view showing a configuration of a baffle 31 of another embodiment.

8(a) to 8(b) are explanatory views showing the configuration of the baffle 31 of another embodiment.

FIG. 9 is an enlarged view of the vicinity of the electrodes 20a and 20b of the film forming apparatus 1 according to the second embodiment of the present invention.

11‧‧‧Ontology

14‧‧‧Insulating components

15‧‧‧Swing axis

20‧‧‧ electrodes

21‧‧‧Electrode

22‧‧‧ Magnet

23‧‧‧ Target material

31‧‧‧Baffle

32, 33‧‧‧ arm components

34‧‧‧Axis

35‧‧‧ leaf spring

36‧‧‧Insulating components

38‧‧‧Abutment

39‧‧‧arm

41‧‧‧DC power supply

42‧‧‧ filter

43‧‧‧match box

44‧‧‧RF power supply

45, 46‧‧‧ switch

Claims (13)

A film forming device for performing sputtering film formation and plasma chemical vapor deposition on a workpiece in a single chamber, comprising: an electrode having a target material; a radio frequency power source applying a radio frequency voltage to the electrode; inert a gas supply unit that supplies an inert gas to the chamber; a material gas supply unit that supplies a material gas into the chamber; a pressure reduction unit that decompresses the chamber; and a shutter mechanism that includes a shutter that can be used Switching between the state of covering the target material and the state of opening the target material in a state of being in contact with the target material; wherein the baffle is opened when the sputtering film is formed, when the plasma is The target material is covered by the baffle plate during chemical vapor deposition. The film forming apparatus of claim 1, wherein the electrode is a magnetron electrode. The film forming apparatus of claim 2, wherein the baffle plate is mainly composed of a conductor. The film forming apparatus according to claim 1, wherein the baffle plate is mainly composed of a material having an element common to a film formed by the chemical vapor deposition film formation. The film forming apparatus according to claim 1, wherein the baffle plate is mainly composed of a conductor and a material, and the material is formed on the workpiece side surface of the conductor and has a film formed by the chemical vapor deposition. The common elements of the membrane. The film forming apparatus of claim 1, wherein the baffle plate is mainly composed of a non-magnetic material. The film forming apparatus of claim 1, wherein at least a part of the baffle is mainly composed of a magnetic body. The film forming apparatus of claim 1, further comprising: a direct current power source for applying a direct current voltage to the electrodes. The film forming apparatus according to claim 1, wherein the shutter mechanism includes a pair of baffles and an arm that swings around the swing shaft that connects the pair of baffles to the chamber. Further, the pair of baffles are configured to be in an open state by swinging the pair of baffles in directions different from each other from the center toward the both sides. The film forming apparatus according to claim 9, wherein the front end portions of the pair of baffles are in contact with each other on the abutting surface, and the abutting surface faces a direction intersecting the direction from the electrode toward the workpiece. The film forming apparatus according to claim 1, wherein the shutter mechanism includes an arm, and the arm swings around a swing shaft that connects the shutter to the chamber, and the shutter It is swingably arranged with respect to the above-described arm. The film forming apparatus according to claim 11, wherein the arm member includes a pair of arm members and a pair of leaf springs, and the pair of arm members are centered on an axis extending parallel to the swing axis The pair of leaf springs are attached to one of the pair of arm members, and the other arm member is clamped so that the posture of the pair of arm members is linear. The film forming apparatus according to claim 1, wherein the shutter mechanism includes an arm, and the arm swings around a swing axis connecting the shutter to the chamber, and is in the arm shape An insulating member is disposed between the object and the baffle, and the insulating member is formed with a crotch portion for preventing formation of a film extending over the arm and the baffle when the sputtering is performed.