TWI456087B - 電磁矽鋼片表面形成鎂橄欖石膜層之方法 - Google Patents

電磁矽鋼片表面形成鎂橄欖石膜層之方法 Download PDF

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Publication number
TWI456087B
TWI456087B TW100143843A TW100143843A TWI456087B TW I456087 B TWI456087 B TW I456087B TW 100143843 A TW100143843 A TW 100143843A TW 100143843 A TW100143843 A TW 100143843A TW I456087 B TWI456087 B TW I456087B
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Taiwan
Prior art keywords
layer
electromagnetic
steel sheet
forsterite film
subsurface
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TW100143843A
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TW201321552A (zh
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China Steel Corp
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  • Chemical Treatment Of Metals (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Manufacturing Of Steel Electrode Plates (AREA)

Claims (6)

  1. 一種電磁矽鋼片表面形成鎂橄欖石膜層之方法，包括以下步驟：(a)提供一電磁矽鋼片，該電磁矽鋼片係具有一表面氧化層及一次表面深層，該表面氧化層係形成於該次表面深層上，該次表面深層之厚度係介於1微米至3微米之間；(b)進行一脫碳退火處理步驟，以使該電磁矽鋼片之次表面深層之矽氧化物含量介於77至87重量百分比(wt%)之間，該次表面深層之矽氧化物係為非晶質二氧化矽(SiO2 )；(c)塗佈一氧化鎂瓷漿於該電磁矽鋼片之表面氧化層上；以及(d)進行一加熱步驟，以使該氧化鎂瓷漿與該表面氧化層及該次表面深層反應而形成一鎂橄欖石膜層。
  2. 如請求項1之方法，其中步驟(d)包括以下步驟：(d1)進行一烘乾步驟；及(d2)進行一升溫加熱步驟。
  3. 如請求項2之方法，其中步驟(d1)之烘乾溫度係小於280℃。
  4. 如請求項3之方法，其中步驟(d1)之烘乾溫度係介於215℃至235℃之間。
  5. 如請求項2之方法，其中步驟(d2)係至少升溫至1000℃。
  6. 如請求項5之方法，其中該鎂橄欖石膜層之厚度係不小 於1.5微米。
TW100143843A 2011-11-30 2011-11-30 電磁矽鋼片表面形成鎂橄欖石膜層之方法 TWI456087B (zh)

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TW100143843A TWI456087B (zh) 2011-11-30 2011-11-30 電磁矽鋼片表面形成鎂橄欖石膜層之方法

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TW100143843A TWI456087B (zh) 2011-11-30 2011-11-30 電磁矽鋼片表面形成鎂橄欖石膜層之方法

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TWI456087B true TWI456087B (zh) 2014-10-11

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KR102493707B1 (ko) * 2019-01-08 2023-02-06 닛폰세이테츠 가부시키가이샤 방향성 전자 강판의 제조 방법 및 방향성 전자 강판

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201034998A (en) * 2009-03-16 2010-10-01 China Steel Corp Method for manufacturing Forsterite layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201034998A (en) * 2009-03-16 2010-10-01 China Steel Corp Method for manufacturing Forsterite layer

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