TWI449222B - A light emitting diode chip package and packaging method thereof - Google Patents

Description

Light-emitting diode chip package and packaging method thereof

The invention relates to a light emitting diode chip package and a packaging method thereof.

In recent years, it has become more and more popular to replace conventional light sources with light-emitting diodes as light-emitting sources as light sources for electronic devices, lighting devices, and the like. However, the current LED package is mainly formed by wire bonding, which has a long manufacturing time and poor heat dissipation of the wires, so as to affect the brightness and life of the LED package.

In view of this, the inventor of the present invention has been actively researching and improving with the spirit of excellence in the industry for many years of experience in the industry, and has produced the invention of a light-emitting diode chip package and its packaging method.

It is an object of the present invention to provide a light emitting diode chip package and a method of packaging the same.

According to a feature of the present invention, a method of packaging a light emitting diode chip package is provided, the method comprising the steps of: providing a light emitting diode wafer having a plurality of light emitting diode chips, each The wafer includes a semiconductor substrate including a P-type electrode region and an N-type electrode region, and at least two electrodes disposed on the electrode mounting surface of the semiconductor substrate and electrically connected to the electrode regions, respectively; electrodes at the wafer Forming a light-transmissive insulating layer on the mounting surface, the light-transmissive insulating layer is formed by exposure and development processing to form a plurality of exposed holes each exposing a corresponding electrode; the position of the transparent insulating layer is corresponding to the P-type electrode region Forming a metal reflective layer on the transparent insulating layer portion; forming a protective insulating layer on the transparent insulating layer and the reflective metal layer, the protective insulating layer is left overlying the metal reflection through exposure and development processing a portion of the protective insulating layer on the layer and extending to the electrode mounting surface; forming an electrical conductor covering the transparent insulating layer and the portions of the protective insulating layer Forming an insulating layer, the conductive body forming the insulating layer is formed by exposing and developing a plurality of conductor forming holes each exposing a corresponding electrode; and forming a conductor unit electrically connected to the corresponding electrode in each of the conductor forming holes And cutting the wafer into individual light emitting diode package packages.

According to another feature of the present invention, a method of packaging a light emitting diode chip package is provided, the method comprising the steps of: providing a light emitting diode wafer having a plurality of light emitting diode chips, Each of the wafers includes a semiconductor body including a P-type electrode region and an N-type electrode region, and at least two electrodes disposed on the electrode mounting surface of the semiconductor substrate and electrically connected to the electrode regions, respectively; Forming a light-transmissive insulating layer on the electrode mounting surface, the light-transmissive insulating layer is formed by exposing and developing to form a plurality of exposed holes each exposing a corresponding electrode; forming a metal reflective layer on the transparent insulating layer; Forming a protective insulating layer on the reflective metal layer, the protective insulating layer is formed by exposure and development processing to expose an exposed hole for exposing an electrode electrically connected to the N-type electrode region and leaving a layer covering the metal layer a portion of the protective insulating layer on the portion of the metal reflective layer corresponding to the position of the N-type electrode region of each wafer; the reflective layer and the remaining portion of the metal Forming a conductor on the protective insulating layer portion to form an insulating layer, the conductor forming the insulating layer is formed by exposing and developing a plurality of conductor forming holes each exposing a corresponding electrode; forming a hole in each of the conductor forming holes a conductor unit electrically connected to the electrode; and dicing the wafer into individual light emitting diode chip packages.

According to still another feature of the present invention, a method of packaging a light emitting diode package is provided, the method comprising the steps of: providing a light emitting diode wafer having a plurality of light emitting diode chips Each of the wafers includes a semiconductor substrate including a P-type electrode region and an N-type electrode region, and at least two electrodes disposed on the electrode mounting surface of the semiconductor substrate and electrically connected to the electrode regions, respectively; Forming a light-transmissive insulating layer on the electrode mounting surface, the light-transmissive insulating layer is formed by exposure and development processing to form a plurality of exposed holes each exposing a corresponding electrode; forming a conductor on the transparent insulating layer to form an insulating layer The conductor forms an insulating layer by forming a plurality of conductor forming holes each exposing a corresponding electrode through exposure and development processing; forming a conductor unit electrically connected to the electrode in each of the conductor forming holes; and cutting the wafer Forming a separate LED package, wherein the conductor forming holes of the electrode electrically connected to the P-type electrode region are also exposed The metal reflective layer conductor insulating layer of the light-bit unit at a position corresponding to the P-type electrode is light transmissive area portion such that the insulating layer is formed on the conductor-forming openings capable of acting.

According to still another feature of the present invention, a light emitting diode chip package is provided, the package comprising: a light emitting diode chip having a semiconductor including a P-type electrode region and an N-type electrode region a substrate and at least two electrodes disposed on the electrode mounting surface of the semiconductor substrate and electrically connected to the electrode regions respectively; a light-transmissive insulating layer formed on the electrode mounting surface and having two perforations exposing the corresponding electrodes; a metal reflective layer formed on the transparent insulating layer portion of the P-type electrode region; a protective insulating layer formed on the metal reflective layer and extending to the electrode mounting surface; Each of the conductors that form a hole in the conductor of the corresponding electrode forms an insulating layer; and a conductor unit formed in the conductor forming hole and electrically connectable to the corresponding electrode.

According to still another feature of the present invention, a light emitting diode chip package is provided, the package comprising: a light emitting diode chip having a semiconductor body including a P-type electrode region and an N-type electrode region; At least two electrodes disposed on the electrode mounting surface of the semiconductor substrate and electrically connected to the electrode regions respectively; a light-transmissive insulating layer formed on the electrode mounting surface and having two perforations for exposing the corresponding electrodes; a metal reflective layer on the light-transmissive insulating layer; a portion of the reflective layer formed on the N-type electrode region formed on the metal reflective layer and having an exposed hole for exposing the electrode of the N-type electrode region a protective insulating layer; a conductor having two conductor-forming holes each reaching a corresponding electrode forms an insulating layer; and a conductor unit formed in the conductor-forming holes and electrically connectable to the corresponding electrode.

According to still another feature of the present invention, a light emitting diode chip package is provided, the package comprising: a light emitting diode wafer having a semiconductor body including a P-type electrode region and an N-type electrode region And at least two electrodes disposed on the electrode mounting surface of the semiconductor substrate and electrically connected to the electrode regions respectively; a light-transmissive insulating layer formed on the electrode mounting surface and having two perforations for exposing the corresponding electrodes; a metal reflective layer formed on the light-transmissive insulating layer; a portion of the reflective layer formed on the N-type electrode region formed on the metal reflective layer and having an exposed hole for exposing the electrode of the N-type electrode region a protective insulating layer; a conductor having two conductor-forming holes each reaching a corresponding electrode forms an insulating layer; and a conductor unit formed in the conductor-forming holes and electrically connectable to the corresponding electrode.

In the detailed description of the preferred embodiments of the present invention, the same or similar elements are denoted by the same reference numerals, and their detailed description will be omitted. In addition, the elements of the drawings are not to be

1 to 5 are schematic flow cross-sectional views showing a method of packaging a light emitting diode package of the first preferred embodiment of the present invention. Referring to Figures 1 to 5, a light-emitting diode wafer 1 is first provided (in the figure, the wafer 1 is only partially displayed). The wafer 1 has a plurality of light emitting diode wafers 10. Each of the wafers 10 includes a semiconductor substrate 100 including a P-type electrode region and an N-type electrode region, and at least two electrodes 102 disposed on the electrode mounting surface 101 of the semiconductor substrate 100 and electrically connected to the electrode regions, respectively. It should be noted that in the following description, the electrode mounting surface 101 of the light emitting diode wafer 10 corresponds to the electrode mounting surface of the wafer 1.

Then, a light-transmissive insulating layer 2 is formed on the electrode mounting surface 101 of the light-emitting diode wafer 1, and an exposure hole 20 is formed in which a plurality of electrodes 102 are exposed.

Next, as shown in the second figure, a metal reflective layer 3 is formed on the portion of the light-transmitting insulating layer where the light-transmitting insulating layer 2 is located at a position corresponding to the P-type electrode region.

Referring to the third figure, after forming the metal reflective layer 3, a protective insulating layer 4 is formed on the transparent insulating layer 2 and the reflective metal layers 3. In the preferred embodiment, the protective insulating layer 4 is left by a process of exposure and development to leave a portion of the protective insulating layer overlying the metal reflective layer 3 and extending to the electrode mounting surface 101.

Next, a conductor-forming insulating layer 5 is formed on the light-transmitting insulating layer 2 and the remaining portion of the protective insulating layer. The conductor forming insulating layer 5 is formed by exposing and developing a plurality of conductor forming holes 50 each exposing a corresponding electrode 102. Then, a conductor unit 6 electrically connected to the electrode region 102 is formed in each of the conductor forming holes 50.

In the preferred embodiment, each conductor unit 6 is comprised of a first conductor layer 60, a second conductor layer 61, a third conductor layer 62, and a fourth conductor layer 63. Of course, each conductor unit 6 can also be composed of a different number of conductor layers.

Finally, the wafer 1 is diced along the scribe line CL to obtain individual light emitting diode package packages as shown in the fifth figure.

6 to 9 are schematic flow cross-sectional views showing a method of packaging a light emitting diode package according to a second preferred embodiment of the present invention. Referring to Figures 6 to 9, a light-emitting diode wafer 1 is first provided (in the figure, the wafer 1 is only partially displayed). The wafer 1 has a plurality of light emitting diode wafers 10. Each of the wafers 10 includes a semiconductor substrate 100 including a P-type electrode region and an N-type electrode region, and at least two electrodes 102 disposed on the electrode mounting surface 101 of the semiconductor substrate 100 and electrically connected to the electrode regions, respectively. It should be noted that in the following description, the electrode mounting surface 101 of the light emitting diode wafer 10 corresponds to the electrode mounting surface of the wafer 1.

Then, a light-transmissive insulating layer 2 is formed on the surface 101 of the electrode region of the light-emitting diode wafer 1, and an exposure hole 20 is formed in which a plurality of electrodes 102 are exposed. Next, a metal reflective layer 3 is formed on the insulating layer 2.

Referring to FIG. 7 , after forming the metal reflective layer 3 , a protective insulating layer 4 is formed on the reflective metal layer 3 . The protective insulating layer 4 is borrowed An exposure hole 40 for exposing the corresponding electrode 102 electrically connected to the N-type electrode region is formed by exposure and development processing, and an N-type electrode region 102 corresponding to each wafer 10 is left overlying the metal layer 3 The portion of the protective insulating layer on the portion of the metal reflective layer at the location.

Next, a conductor-forming insulating layer 5 is formed on the metal reflective layer 3 and the remaining portion of the protective insulating layer. The insulating layer 5 is formed by a plurality of conductor forming holes 50 each exposing a corresponding electrode 102 via exposure and development processing. Then, in each of the conductor forming holes 50, a conductor unit 6 electrically connected to the electrode 102 is formed.

As in the first preferred embodiment, each conductor unit 6 may be composed of a first conductor layer 60, a second conductor layer 61, a third conductor layer 62, and a fourth conductor layer 63.

Finally, the wafer 1 is diced along the scribe line CL to obtain individual illuminating diode package packages as shown in the ninth figure.

10 to 12 are schematic flow cross-sectional views showing a method of packaging a light emitting diode package according to a third preferred embodiment of the present invention. Referring to the tenth to thirteenth drawings, a light-emitting diode wafer 1 is first provided (in the drawing, the wafer 1 is only partially displayed). The wafer 1 has a plurality of light emitting diode wafers 10. Each of the wafers 10 includes a semiconductor substrate 100 including a P-type electrode region and an N-type electrode region, and at least two electrodes 102 disposed on the electrode mounting surface 101 of the semiconductor substrate 100 and electrically connected to the electrode regions, respectively. It should be noted that in the following description, the electrode mounting surface 101 of the light emitting diode wafer 10 corresponds to the electrode mounting surface of the wafer 1.

Then, a light-transmissive insulating layer 2 is formed on the electrode mounting surface 101 of the light-emitting diode wafer 1, and an exposure hole 20 is formed in which a plurality of electrodes 102 are exposed.

Referring to FIG. 11 together, a conductor-forming insulating layer 5 is formed on the light-transmitting insulating layer 2. The insulating layer 5 is formed by a plurality of conductor forming holes 50 each exposing a corresponding electrode 102 via exposure and development processing. then, A conductor unit 6 electrically connected to the electrode 102 is formed in each of the conductor forming holes 50. It should be noted that in the preferred embodiment, the conductor forming hole 50 of the electrode 102 electrically connected to the P-type electrode region is also exposed to the position of the transparent insulating layer 2 at a position corresponding to the P-type electrode region. The light insulating layer portion is such that the conductor unit 6 formed in the conductor forming hole 50 can function as a metal reflective layer.

As with the previous preferred embodiment, each conductor unit 6 may be composed of a first conductor layer 60, a second conductor layer 61, a third conductor layer 62, and a fourth conductor layer 63.

Finally, the wafer 1 is diced along the scribe line CL to obtain individual illuminating diode package packages as shown in the ninth figure.

In summary, the "light-emitting diode chip package and its packaging method" of the present invention can achieve the intended purpose and efficacy by the above-mentioned disclosed structure and device, and is not disclosed in the publication before application. Use, in line with the novelty, progress and other requirements of the invention patent.

The drawings and descriptions of the present invention are merely illustrative of the embodiments of the present invention, and are not intended to limit the embodiments of the present invention; Equivalent changes or modifications should be covered in the scope of the patent application in this case below.

1‧‧‧Light Emitting Diode Wafer

10‧‧‧Light Emitter Wafer

100‧‧‧Semiconductor substrate

101. . . Electrode mounting surface

102. . . electrode

2. . . Light transmissive insulation

20. . . Exposure hole

3. . . Metal reflective layer

4. . . Protective insulation

5. . . Conductor forming an insulating layer

50. . . Conductor forming hole

6. . . Conductor unit

60. . . First conductor layer

61. . . Second conductor layer

62. . . Third conductor layer

63. . . Fourth conductor layer

CL. . . Cutting line

1 to 5 are schematic flow cross-sectional views showing a packaging method for a light emitting diode package according to a first preferred embodiment of the present invention; and sixth to ninth drawings are for showing the present invention A schematic cross-sectional view of a method of packaging a light emitting diode package of a preferred embodiment; and tenth to twelfth drawings are a light emitting diode chip for showing a third preferred embodiment of the present invention A schematic cross-sectional view of a package method of a package.

100‧‧‧Semiconductor substrate

2‧‧‧Transparent insulation

3‧‧‧Metal reflector

5‧‧‧Conductor forming insulation

6‧‧‧Conductor unit

60‧‧‧First conductor layer

61‧‧‧Second conductor layer

62‧‧‧3rd conductor layer

63‧‧‧4th conductor layer

Claims (12)

A method for packaging a light emitting diode package includes the steps of: providing a light emitting diode wafer having a plurality of light emitting diode chips, each of the wafers including a P-type electrode region and a semiconductor substrate of an N-type electrode region and at least two electrodes disposed on the electrode mounting surface of the semiconductor substrate and electrically connected to the electrode regions respectively; forming a light-transmitting insulating layer on the electrode mounting surface of the wafer, The transparent insulating layer is formed by exposing and developing a plurality of exposed holes each exposing a corresponding electrode; and the position of the transparent insulating layer is formed on a portion of the transparent insulating layer corresponding to the position of the P-type electrode region a metal reflective layer; forming a protective insulating layer on the transparent insulating layer and the reflective metal layer, the protective insulating layer leaving a protective insulating layer covering the metal reflective layer and extending to the electrode mounting surface via exposure and development processing a layer portion; forming an insulating layer covering the transparent insulating layer and the portions of the protective insulating layer to form an insulating layer, the conductive body forming the insulating layer is Forming a plurality of conductor forming holes each exposing a corresponding electrode by exposure and development processing; forming a conductor unit electrically connected to the corresponding electrode in each of the conductor forming holes; and cutting the wafer into individual illuminating Diode chip package. The encapsulation method according to claim 1, wherein in the step of forming the conductor unit, each conductor unit is a first conductor layer formed of one of silver, aluminum, and an alloy thereof, and one a second conductor layer formed of one of chromium, titanium, copper, or an alloy thereof, a third conductor layer formed of one of nickel, copper, chromium, or an alloy thereof, and one consisting of nickel and gold Or a fourth conductor layer formed by one of the alloys thereof. A method for packaging a light emitting diode package includes the steps of: providing a light emitting diode wafer having a plurality of light emitting diode chips, each of the wafers including a P-type electrode region and a semiconductor substrate of an N-type electrode region and at least two electrodes disposed on the electrode mounting surface of the semiconductor substrate and electrically connected to the electrode regions respectively; forming a light-transmitting insulating layer on the electrode mounting surface of the wafer, The transparent insulating layer is formed by exposing and developing a plurality of exposed holes each exposing a corresponding electrode; forming a metal reflective layer on the transparent insulating layer; forming a protective insulating layer on the reflective metal layer, The protective insulating layer is formed by exposure and development processing to form an exposure hole for exposing an electrode electrically connected to the N-type electrode region and leaving an area covering the metal layer at an N-type electrode region corresponding to each of the wafers. a portion of the protective insulating layer on the portion of the metal reflective layer of the location; forming a conductor on the portion of the metallic reflective layer and the remaining protective insulating layer Forming an insulating layer, the conductor forming the insulating layer is formed by exposing and developing a plurality of conductor forming holes each exposing a corresponding electrode; forming a conductor unit electrically connected to the electrode in each of the conductor forming holes; The wafer is diced into individual light emitting diode package packages. In the encapsulation method of claim 3, in the step of forming the conductor unit, each conductor unit is a first conductor layer formed of one of silver, aluminum, and an alloy thereof, and one a second conductor layer formed of one of chromium, titanium, copper, or an alloy thereof, a third conductor layer formed of one of nickel, copper, chromium, or an alloy thereof, and one consisting of nickel and gold Or a fourth conductor layer formed by one of the alloys thereof. A method for packaging a light emitting diode package includes the steps of: providing a light emitting diode wafer having a plurality of light emitting diode chips, each of the wafers including a P-type electrode region and a semiconductor substrate of an N-type electrode region and at least two electrodes disposed on the electrode mounting surface of the semiconductor substrate and electrically connected to the electrode regions respectively; forming a light-transmitting insulating layer on the electrode mounting surface of the wafer, The light-transmissive insulating layer is formed by exposing and developing a plurality of exposure holes each exposing a corresponding electrode; forming a conductor on the light-transmissive insulating layer to form an insulating layer, the conductor forming the insulating layer is processed through exposure and development Forming a plurality of conductor forming holes each exposing a corresponding electrode; forming a conductor unit electrically connected to the electrode in each of the conductor forming holes; and cutting the wafer into individual light emitting diode chip packages, wherein The conductor forming hole of the electrode electrically connected to the P-type electrode region is also exposed to the position of the transparent insulating layer at a position corresponding to the P-type electrode region The light-transmissive insulating layer portion is disposed such that the conductor unit formed in the conductor forming hole can function as a metal reflective layer. The encapsulation method of claim 5, wherein in the step of forming the conductor unit, each conductor unit is a first conductor layer formed of one of silver, aluminum, and an alloy thereof, and one a second conductor layer formed of one of chromium, titanium, copper, or an alloy thereof, a third conductor layer formed of one of nickel, copper, chromium, or an alloy thereof, and one consisting of nickel and gold Or a fourth conductor layer formed by one of the alloys thereof. A light emitting diode chip package comprising: a light emitting diode chip having a semiconductor substrate including a P-type electrode region and an N-type electrode region; and at least two electrode mounting surfaces disposed on the semiconductor substrate and An electrode electrically connected to the electrode regions; a light-transmissive insulating layer formed on the electrode mounting surface and having two perforations corresponding to the exposed electrodes; and a transparent insulating layer formed on the P-type electrode region a metal reflective layer on the portion of the light-transmissive insulating layer; a protective insulating layer formed on the metal reflective layer and extending to the electrode mounting surface; and a conductor having two conductor-forming holes each reaching a corresponding electrode to form an insulating layer And a conductor unit formed in the conductor-forming holes and electrically connectable to the corresponding electrode. The light-emitting diode package according to claim 7, wherein in the step of forming the conductor unit, each conductor unit is formed by a first one of silver, aluminum, and an alloy thereof. a conductor layer, a second conductor layer formed of one of chromium, titanium, copper, or an alloy thereof, a third conductor layer formed of one of nickel, copper, chromium, or an alloy thereof, and A fourth conductor layer formed of one of nickel, gold, or an alloy thereof. A light emitting diode chip package comprising: a light emitting diode chip having a semiconductor substrate including a P-type electrode region and an N-type electrode region; and at least two electrode mounting surfaces disposed on the semiconductor substrate and An electrode electrically connected to the electrode regions; a light-transmissive insulating layer formed on the electrode mounting surface and having two perforations corresponding to the exposed electrodes; a metal reflective layer formed on the light-transmissive insulating layer; Forming a protective insulating layer on the reflective layer portion of the metal reflective layer on the N-type electrode region and having an exposure hole for exposing the electrode of the N-type electrode region; having two electrodes each corresponding to a corresponding one The conductor forming the hole of the conductor forms an insulating layer; and a conductor unit formed in the conductor forming hole and electrically connectable to the corresponding electrode. The light-emitting diode package according to claim 9, wherein in the step of forming the conductor unit, each conductor unit is formed by a first one of silver, aluminum, and an alloy thereof. a conductor layer, a second conductor layer formed of one of chromium, titanium, copper, or an alloy thereof, a third conductor layer formed of one of nickel, copper, chromium, or an alloy thereof, and A fourth conductor layer formed of one of nickel, gold, or an alloy thereof. A light emitting diode chip package comprising: a light emitting diode chip having a semiconductor substrate including a P-type electrode region and an N-type electrode region; and at least two electrode mounting surfaces disposed on the semiconductor substrate and An electrode electrically connected to the electrode regions; a light-transmissive insulating layer formed on the electrode mounting surface and having two perforations of exposed electrodes; and a conductor formed on the light-transmissive insulating layer forms an insulating layer, The conductor forming the insulating layer is formed with a plurality of conductor forming holes each exposing a corresponding electrode; and a conductor unit formed in the conductor forming holes and electrically connectable to the corresponding electrode. The illuminating diode package according to claim 11, wherein in the step of forming the conductor unit, each conductor unit is formed by a first one of silver, aluminum, and an alloy thereof. a conductor layer, a second conductor layer formed of one of chromium, titanium, copper, or an alloy thereof, a third conductor layer formed of one of nickel, copper, chromium, or an alloy thereof, and A fourth conductor layer formed of one of nickel, gold, or an alloy thereof.