TWI446104B - Pellicle film, method of manufacturing the same, and pellicle sticking the film - Google Patents
Pellicle film, method of manufacturing the same, and pellicle sticking the film Download PDFInfo
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- TWI446104B TWI446104B TW101111217A TW101111217A TWI446104B TW I446104 B TWI446104 B TW I446104B TW 101111217 A TW101111217 A TW 101111217A TW 101111217 A TW101111217 A TW 101111217A TW I446104 B TWI446104 B TW I446104B
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- film
- pellicle
- absorbing layer
- ultraviolet absorbing
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
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- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 claims description 12
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
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- 238000005755 formation reaction Methods 0.000 description 9
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- 239000002904 solvent Substances 0.000 description 8
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- 229920006218 cellulose propionate Polymers 0.000 description 6
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011354 acetal resin Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 150000001925 cycloalkenes Chemical class 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229920006324 polyoxymethylene Polymers 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 3
- 229920008347 Cellulose acetate propionate Polymers 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- 239000000020 Nitrocellulose Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 239000004918 carbon fiber reinforced polymer Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 229920001220 nitrocellulos Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 150000008376 fluorenones Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 vinyl acetal resin Chemical compound 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- URKGPOWDUZJOHS-UHFFFAOYSA-N 1a,9b-dihydroanthra[1,2-b]thiirene Chemical compound C1=CC=C2C=C(C3SC3C=C3)C3=CC2=C1 URKGPOWDUZJOHS-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
本發明是有關於一種半導體裝置、IC封裝、印刷基板、液晶顯示器或者有機EL顯示器等的製造時作為防塵物使用的防塵薄膜組件,特別是有關於一種使用i線(365nm)、h線(405nm)或者g線(436nm)的任一者,或者將它們複合而成的紫外線作為曝光光源的光微影步驟中使用的防塵薄膜、其製造方法以及貼附該膜的防塵薄膜組件。The present invention relates to a pellicle for use as a dustproof material in the manufacture of a semiconductor device, an IC package, a printed substrate, a liquid crystal display, or an organic EL display, and more particularly to an i-line (365 nm), h-line (405 nm). Or any of g lines (436 nm) or ultraviolet rays obtained by combining them as a pellicle film used in the photolithography step of an exposure light source, a method for producing the same, and a pellicle film module to which the film is attached.
LSI(Large Scale Integration,大型積體電路)、超LSI等的半導體,IC封裝體、印刷基板等的電路基板,液晶顯示器以及有機EL顯示器等的製造中,在半導體晶圓、封裝基板或者顯示器用原板表面上設置光阻,然後,通過具有圖案的光罩向其照射光,顯影以製作圖案。此時所用的光罩(photomask)或者初縮遮罩(reticle)(以下,均稱為光罩)如有灰塵附著,該灰塵對光進行吸收或使光彎曲,因此存在下列問題:轉印的圖案就會變形或者圖案的邊緣就會模糊,除此以外,基底變黑而髒污等,最終產品的尺寸、品質以及外觀等受損之問題。LSI (Large Scale Integration), semiconductors such as super LSI, circuit boards such as IC packages and printed boards, and semiconductor wafers, package substrates, or displays for manufacturing liquid crystal displays and organic EL displays. A photoresist is provided on the surface of the original plate, and then light is irradiated thereto by a patterned mask to develop a pattern. The photomask or reticle (hereinafter, referred to as a reticle) used at this time is attached with dust, which absorbs light or bends light, and thus has the following problems: transfer The pattern is deformed or the edges of the pattern are blurred. In addition, the substrate becomes black and dirty, and the size, quality, and appearance of the final product are damaged.
因此,這些操作通常在無塵室中進行,但是即使如此,要使光罩時常保持清潔也是困難的。因此,要在光罩表面貼附防塵薄膜組件作為防塵物後再進行曝光。在該情況下,異物就不會直接附著在光罩的表面上,而是附著在防 塵薄膜組件上,因此光微影時只要將焦點對位於光罩的圖案上,防塵薄膜組件上的異物就與轉印無關了。Therefore, these operations are usually performed in a clean room, but even so, it is difficult to keep the reticle clean from time to time. Therefore, the pellicle is attached to the surface of the photomask as a dustproof material before exposure. In this case, the foreign matter does not directly adhere to the surface of the reticle, but is attached to the Guard On the dust film assembly, as long as the focus is placed on the pattern of the reticle during photolithography, the foreign matter on the pellicle assembly is irrelevant to the transfer.
一般而言,防塵薄膜組件是將光良好透過的透明的防塵薄膜貼附或接著在包括鋁、不銹鋼以及工程塑膠等的防塵薄膜組件框架的上端面而製作。進一步,在防塵薄膜組件框架的下端,設置有用於光罩的安裝的包括聚丁烯樹脂、聚乙酸乙烯酯樹脂、丙烯酸樹脂、熱熔黏著劑、矽酮樹脂等的黏著層,以及視需要而設置有以保護該黏著層為目標的脫膜層(剝離片)。In general, a pellicle film is produced by attaching a transparent pellicle film that transmits light well or subsequently to an upper end surface of a pellicle frame including aluminum, stainless steel, and engineering plastics. Further, at the lower end of the pellicle frame, an adhesive layer including a polybutene resin, a polyvinyl acetate resin, an acrylic resin, a hot-melt adhesive, an anthrone resin, or the like for mounting the photomask is provided, and if necessary A release layer (release sheet) for protecting the adhesive layer is provided.
另外,在將防塵薄膜組件貼附於光罩的狀態下,為了使防塵薄膜組件內部圍成的空間與外部沒有氣壓差,在防塵薄膜組件框架的一部分設置氣壓調整用的小孔,為了防止通過該小孔的移動空氣所帶入的異物,有時也設置過濾器。In addition, in a state in which the pellicle is attached to the reticle, a small hole for adjusting the air pressure is provided in a part of the pellicle frame in order to prevent passage of a space between the space enclosed by the pellicle and the outside of the pellicle assembly. The foreign matter brought in by the moving air of the small hole is sometimes provided with a filter.
作為防塵薄膜,要選擇與曝光使用的光源相對應的最適宜的材料而使用。例如,在使用ArF雷射(193nm)或者KrF雷射(248nm)的情況下,使用對該波長的光有充分的透過率和耐光性的氟類樹脂(專利文獻1)。As the pellicle film, it is necessary to select an optimum material corresponding to the light source used for exposure. For example, when an ArF laser (193 nm) or a KrF laser (248 nm) is used, a fluorine-based resin having sufficient transmittance and light resistance to light of the wavelength is used (Patent Document 1).
另外,在使用i線(365nm)、h線(405nm)以及g線(436nm)進行曝光的情況下,可以使用硝化纖維素、乙基纖維素、丙酸纖維素等的纖維素類樹脂,聚乙烯基縮醛樹脂以及環烯烴類樹脂等(專利文獻2、專利文獻3以及專利文獻4)。這些的光源中,一般使用高壓水銀燈或者超高壓水銀燈。In addition, when exposure is performed using i-line (365 nm), h-line (405 nm), and g-line (436 nm), a cellulose resin such as nitrocellulose, ethyl cellulose, or cellulose propionate can be used for polymerization. A vinyl acetal resin, a cycloolefin resin, etc. (patent document 2, patent document 3, and patent document 4). Among these light sources, high pressure mercury lamps or ultra high pressure mercury lamps are generally used.
高壓水銀燈以及超高壓水銀燈具有在254nm~577nm之間具有數個峰的寬波長的特性。它們之中,從發光量以及光能量的觀點而言,光微影中可以良好地使用最高強度的i線(365nm),然後為g線(436nm)以及h線(405nm)的光,偶爾也使用313nm的光。另外,在顯示器製造用途等特別重視產量的情況下,並不單獨使用特定的波的光,而是使用例如365nm~436nm的全部的光。The high pressure mercury lamp and the ultrahigh pressure mercury lamp have a characteristic of having a wide wavelength of several peaks between 254 nm and 577 nm. Among them, from the viewpoint of the amount of luminescence and the light energy, the highest intensity i-line (365 nm) can be used well in the photolithography, and then the g-line (436 nm) and the h-line (405 nm) light, and occasionally Light of 313 nm was used. Further, in the case where the output of the display is particularly important for the production of the display, the light of the specific wave is not used alone, and for example, all of the light of 365 nm to 436 nm is used.
上述的氟樹脂,對短波長幾乎沒有吸收,可以使用短波長且高能量的KrF雷射以及ArF雷射的波長,所以即便使用比它們的能量低的i線、g線等的波長當然也完全沒有問題。但是氟樹脂有成本極高的缺點。因此一般在i線~g線的波長範圍中,考慮作為防塵薄膜材料的種種特性,多使用便於使用的纖維素類樹脂等。The fluororesin described above has almost no absorption at short wavelengths, and it is possible to use wavelengths of short-wavelength and high-energy KrF lasers and ArF lasers. Therefore, even wavelengths such as i-line and g-line which are lower than their energy are used. no problem. However, fluororesin has the disadvantage of being extremely expensive. Therefore, in general, in the wavelength range of the i-line to the g-line, various types of characteristics of the dust-proof film material are considered, and a cellulose resin which is easy to use is often used.
[專利文獻1]日本專利特開平03-39963[Patent Document 1] Japanese Patent Laid-Open No. 03-39963
[專利文獻2]日本專利特開平01-100549[Patent Document 2] Japanese Patent Special Opening 01-100549
[專利文獻3]日本專利特開平01-172430[Patent Document 3] Japanese Patent Laid-Open No. 01-172430
[專利文獻4]日本專利特開2010-152308[Patent Document 4] Japanese Patent Laid-Open No. 2010-152308
近年,在光微影步驟中,為了描繪線寬更細的電路以及提高生產性,要求更高的曝光強度。若曝光強度變高,則促進防塵薄膜的紫外線造成的劣化,從而發生膜厚的減少、透過率的變低、霧化(haze)的發生等的問題。具體而言,光罩的鉻(Cr)層所遮光的部分由於沒有照射到紫 外線,所以沒有任何變化,但是沒有Cr層的部分(描繪圖案的部分)中,防塵薄膜表面直接照射到紫外線,該部分的膜受到損傷。In recent years, in the photolithography step, in order to draw a circuit having a finer line width and to improve productivity, higher exposure intensity is required. When the exposure intensity is increased, the deterioration of the ultraviolet ray of the pellicle film is promoted, and the film thickness is reduced, the transmittance is lowered, and haze is generated. Specifically, the portion of the chrome (Cr) layer of the photomask is shielded from light by purple The outer line, so there is no change, but in the portion where the Cr layer is not present (the portion in which the pattern is drawn), the surface of the pellicle film is directly irradiated with ultraviolet rays, and the film of the portion is damaged.
如上述,曝光光源在使用高壓水銀燈或者超高壓水銀燈的情況下,自這些光源發生的光中,不僅有曝光用的i線、h線、g線,還有其他波長的光,若列舉具有代表性者,則包括254nm、302nm、313nm等的短波長光。這些短波長的光,特別是254nm的光,具有比纖維素類樹脂等構成防塵薄膜的分子的鍵結能量還要高的能量,因此其鍵結會被切斷。鍵結被切斷的分子從而分解、氣化,因此防塵薄膜表面被削取而膜厚減少。As described above, in the case of using a high-pressure mercury lamp or an ultra-high pressure mercury lamp, the light generated from these light sources includes not only i-line, h-line, g-line for exposure, but also light of other wavelengths. The latter includes short-wavelength light of 254 nm, 302 nm, 313 nm, and the like. These short-wavelength light, particularly 254 nm light, has a higher energy than the bonding energy of a molecule constituting a dust-proof film such as a cellulose resin, and thus the bond is cut. The molecules whose bonds are cut are decomposed and vaporized, so that the surface of the pellicle is scraped and the film thickness is reduced.
若部分防塵薄膜組件的膜厚減少,則光路長變得不均勻,除光學上較不佳以外,表面變得不平整而光會散射,因此透過率亦變低。另外,膜強度減少,在進一步嚴重的情況下,防塵薄膜上的張力變得不均勻,亦有防塵薄膜表面上發生折皺的情況。When the film thickness of the partial pellicle film is reduced, the optical path length becomes uneven, and besides being optically poor, the surface becomes uneven and light is scattered, so that the transmittance is also lowered. Further, the film strength is reduced, and in the case of further seriousness, the tension on the pellicle film becomes uneven, and wrinkles may occur on the surface of the pellicle film.
為了防止這樣的問題,在自曝光光源發生的光中,將254nm、302nm、313nm等圖案化不使用的短波長的光除去即可。作為其方法,例如可以列舉從曝光光源到光罩的光路中,插入僅將這些短波長的光除去的過濾器,或者插入對這些短波長的光以外的光進行反射的反光鏡(mirror)等。另外,在沒有光罩的圖案面的側,亦可附加具有同樣的過濾器功能的層。這些過濾器功能可藉由如下而獲得:在石英玻璃等的過濾器用基板或光罩本身的圖案面的相反 側,例如將TiO2 ,ZnO2 ,CeO2 等的在短波長範圍有吸收的無機材料藉由蒸鍍或濺鍍等的方法而使其附著。但是,這樣的加工成本不一定便宜,而且這些材料的折射率高且反射大,因此有使曝光使用的光的強度變低的壞處。因此,不是在曝光機或光罩側進行對應,而是要在防塵薄膜組件側進行對應。In order to prevent such a problem, light of a short wavelength which is not used for patterning such as 254 nm, 302 nm, or 313 nm may be removed from the light generated from the exposure light source. As a method, for example, a filter that removes only these short-wavelength light or a mirror that reflects light other than the short-wavelength light is inserted into the optical path from the exposure light source to the reticle. . Further, a layer having the same filter function may be added to the side of the pattern surface without the mask. These filter functions can be obtained by, for example, TiO 2 , ZnO 2 , CeO 2 or the like having absorption in the short wavelength range on the opposite side of the pattern surface of the filter substrate such as quartz glass or the reticle itself. The material is adhered by a method such as vapor deposition or sputtering. However, such processing costs are not necessarily inexpensive, and since these materials have a high refractive index and a large reflection, there is a disadvantage that the intensity of light used for exposure is lowered. Therefore, the correspondence is not made on the side of the exposure machine or the reticle, but on the side of the pellicle.
但是,將上述的無機材料賦予至防塵薄膜上是極為困難的。其原因在於:蒸鍍或濺鍍進行時必須將防塵薄膜收納至真空室內,但是由於在減壓時以及復歸至大氣壓時,在真空室內發生大量的空氣出入,因此防塵薄膜上有大量的異物附著。但是,防塵薄膜與玻璃基板等不同,無法洗浄。因此,在要求有極高的清潔度的防塵薄膜上有異物附著的情況下,立即會變成不良。However, it is extremely difficult to impart the above-mentioned inorganic material to the pellicle. The reason for this is that the vapor-proof film must be stored in the vacuum chamber during vapor deposition or sputtering, but a large amount of air is introduced into the vacuum chamber during decompression and return to atmospheric pressure, so that a large amount of foreign matter adheres to the dust-proof film. . However, the pellicle film is different from the glass substrate and the like, and cannot be washed. Therefore, in the case where foreign matter adheres to the pellicle film which requires extremely high cleanliness, it immediately becomes defective.
由於上述的理由,至今為止還沒有出現使用了包括便宜的纖維素類樹脂的防塵薄膜的對短波長的光的耐久性優良的防塵薄膜。因此,在問題發生前,不得不採用貼換防塵薄膜的這種方法。For the above reasons, a pellicle film which is excellent in durability against short-wavelength light using a pellicle film including an inexpensive cellulose resin has not been hitherto. Therefore, this method of replacing the pellicle film has to be used before the problem occurs.
因此本發明的第1目的是提供一種對適於使用i線、h線、g線的曝光的254nm、313nm等的短波長紫外線的耐性高且便宜的防塵薄膜。Therefore, a first object of the present invention is to provide a pellicle having high resistance and low cost to short-wavelength ultraviolet rays of 254 nm or 313 nm suitable for exposure using i-line, h-line, and g-line.
本發明的第2目的是提供一種350nm~450nm的波長範圍的紫外線的光微影步驟中使用的便宜且耐久性優良的防塵薄膜的製造方法。A second object of the present invention is to provide a method for producing a pellicle film which is inexpensive and excellent in durability used in the photolithography step of ultraviolet rays in the wavelength range of 350 nm to 450 nm.
進一步本發明的第3目的是提供一種350nm~450nm的波長範圍的紫外線的光微影步驟中可以使用的便宜的防塵薄膜組件。Further, a third object of the present invention is to provide an inexpensive pellicle module which can be used in the photolithography step of ultraviolet rays in the wavelength range of 350 nm to 450 nm.
本發明的上述諸目的藉由防塵薄膜、其製造方法以及使用該防塵薄膜的防塵薄膜組件而達成。所述防塵薄膜是在照射350nm~450nm的波長範圍的紫外線的光微影步驟中所使用的防塵薄膜組件用防塵薄膜,其特徵在於:所述防塵薄膜於原料防塵薄膜的至少曝光光源側的表面上具有紫外線吸收層,所述紫外線吸收層對上述350nm~450nm的波長範圍的紫外線的平均透過率為90%以上,同時對200nm~300nm的波長範圍的紫外線的平均透過率為50%以下。本發明中,較佳為在上述紫外線吸收層上更具有抗反射層。另外,上述紫外線吸收層較佳為藉由矽酮樹脂構成,紫外線吸收層的折射率較佳為1.50以下。The above objects of the present invention are achieved by a pellicle film, a method of manufacturing the same, and a pellicle film assembly using the pellicle film. The pellicle film is a pellicle for a pellicle film assembly used in a photolithography step of irradiating ultraviolet rays in a wavelength range of 350 nm to 450 nm, characterized in that the pellicle film is on the surface of at least the exposure light source side of the raw material pellicle film. The ultraviolet absorbing layer has an average transmittance of ultraviolet rays in the wavelength range of 350 nm to 450 nm of 90% or more, and an average transmittance of ultraviolet rays in the wavelength range of 200 nm to 300 nm of 50% or less. In the present invention, it is preferred to further have an antireflection layer on the ultraviolet absorbing layer. Further, the ultraviolet absorbing layer is preferably made of an fluorenone resin, and the refractive index of the ultraviolet absorbing layer is preferably 1.50 or less.
本發明的防塵薄膜,僅管使用纖維素類樹脂、聚乙烯基縮醛樹脂、環烯烴類樹脂等與以往相同的便宜的材料,,但是對在曝光中作為不需要的成分而存在的300nm以下的成分的光的耐性高,因此與以往的防塵薄膜相比為大幅度地提高了耐光性的優良之物。因此,可以使用更高的曝光強度,從而可以達成曝光品質的提升以及產量的提升。另外,由於使用中的膜厚的減少小,因此可以防止折皺或模糊的發生等的問題,且可以長期維持曝光品質。In the pellicle film of the present invention, a commercially available inexpensive material such as a cellulose resin, a polyvinyl acetal resin or a cycloolefin resin is used, but 300 nm or less which is an unnecessary component during exposure is used. Since the component has high light resistance, it is superior to the conventional dustproof film in that the light resistance is greatly improved. Therefore, a higher exposure intensity can be used, so that an improvement in exposure quality and an increase in yield can be achieved. Further, since the decrease in the film thickness during use is small, problems such as occurrence of wrinkles or blurring can be prevented, and the exposure quality can be maintained for a long period of time.
構成本發明的防塵薄膜的原料防塵薄膜的材料可以在公知的材料中進行適宜選擇,但可以使用硝化纖維素、乙基纖維素、乙酸纖維素(cellulose acetate)、丙酸纖維素(cellulose propionate)以及乙酸-丙酸纖維素(cellulose acetate propionate)等的纖維素類樹脂,聚乙烯基縮醛樹脂以及環烯烴類樹脂等與以往相同的便宜的材料。這些材料在圖案化中所使用的350nm~450nm的波長範圍中具有充分的耐性,但是對在曝光中作為不需要的成分而存在的300nm以下的短波長成分的光的耐性低,從而由此產生的劣化快。本發明中,防塵薄膜的入射側表面所設置的紫外線吸收層能防止上述短波長成分到達原料防塵薄膜,因此耐光性被大幅度改善。The material of the raw material pellicle constituting the pellicle film of the present invention can be appropriately selected from known materials, but nitrocellulose, ethyl cellulose, cellulose acetate, and cellulose propionate can be used. And a cellulose resin such as cellulose acetate propionate, a commercially available inexpensive material such as a polyvinyl acetal resin or a cycloolefin resin. These materials have sufficient resistance in the wavelength range of 350 nm to 450 nm used for patterning, but have low resistance to light of a short-wavelength component of 300 nm or less which is present as an unnecessary component in exposure, thereby resulting in The deterioration is fast. In the present invention, the ultraviolet absorbing layer provided on the incident side surface of the pellicle film can prevent the short-wavelength component from reaching the raw material pellicle film, and thus the light resistance is greatly improved.
上述紫外線吸收層特別是對350nm~450nm的波長範圍的紫外線的平均透過率為90%以上,同時亦需要對200nm~300nm的波長範圍的紫外線的平均透過率為50%以下。這樣的紫外線吸收層的材料可以從公知物中適宜選擇,本發明中,特佳為以矽酮樹脂構成紫外線吸收層。矽酮樹脂作為紫外線吸收層來使用時,與無機材料不同,可以在溶解於溶劑中的溶液狀態下進行塗佈成膜,因此與通常的製造防塵薄膜的情況相同,可以製造本發明的防塵薄膜。藉此可以得到異物少的本發明的清潔的防塵薄膜。另外,矽酮樹脂耐光性優良,因此具有即便吸收紫外線,劣化的程度亦極少的優點。In particular, the ultraviolet ray absorbing layer has an average transmittance of 90% or more for ultraviolet rays in a wavelength range of 350 nm to 450 nm, and an average transmittance of 50% or less for ultraviolet rays in a wavelength range of 200 nm to 300 nm. The material of such an ultraviolet absorbing layer can be suitably selected from known ones. In the present invention, it is particularly preferred to constitute an ultraviolet absorbing layer with an fluorenone resin. When the fluorenone resin is used as the ultraviolet ray absorbing layer, unlike the inorganic material, the film can be formed into a film in a solution dissolved in a solvent. Therefore, the dust-proof film of the present invention can be produced in the same manner as in the case of a general production of a dust-proof film. . Thereby, the cleaned pellicle film of the present invention having less foreign matter can be obtained. Further, since the anthrone resin is excellent in light resistance, it has an advantage that the degree of deterioration is extremely small even if ultraviolet rays are absorbed.
本發明的防塵薄膜中,較佳為除了紫外線吸收層之 外,進一步設置抗反射層。抗反射層為根據所賦予的上述紫外線吸收層的折射率而對材料、膜厚以及賦予的位置進行考慮且設置即可。抗反射層可以設置於入射側的防塵薄膜最外層、出射側的最外層或者其兩側的最外層,但亦可根據折射率的組合而設置於紫外線吸收層和原料防塵薄膜的中間。另外,抗反射層的材料不限於1種類,亦可以多種類組合而將抗反射層設為多層構造。In the pellicle film of the present invention, it is preferably in addition to the ultraviolet absorbing layer. Further, an antireflection layer is further provided. The antireflection layer may be provided in consideration of the material, the film thickness, and the position to be imparted according to the refractive index of the ultraviolet absorbing layer to be applied. The antireflection layer may be provided on the outermost layer of the pellicle film on the incident side, the outermost layer on the exit side, or the outermost layer on both sides, but may be provided between the ultraviolet absorbing layer and the raw material pellicle film in accordance with a combination of refractive indexes. Further, the material of the antireflection layer is not limited to one type, and the antireflection layer may have a multilayer structure in a plurality of combinations.
另外,本發明中,將上述紫外線吸收層的折射率設為1.50以下,從而可具有紫外線吸收能力,同時具有作為抗反射層的功能。Further, in the present invention, the refractive index of the ultraviolet absorbing layer is set to 1.50 or less, and it is possible to have an ultraviolet absorbing ability and a function as an antireflection layer.
本發明的防塵薄膜較佳為藉由如下來製造:構成本發明的防塵薄膜的原料防塵薄膜、紫外線吸收層以及抗反射層之中,將成為最外層的任一個材料溶液塗佈在成膜基板上,將其乾燥、固化後,在該乾燥固化的層上,根據所希望的膜構造的順序,反覆進行同樣的步驟,以依序將各層的構成材料塗佈、乾燥以及固化,最後,將成膜基板上形成積層的防塵薄膜的整體從成膜基板上剝離即可。藉由該手法,與通常的防塵薄膜的製造方法相同,可以得到異物的附著少且具有紫外線吸收層的本發明的防塵薄膜。The dust-proof film of the present invention is preferably produced by coating a material solution which is the outermost layer on the film-forming substrate among the raw material dust-proof film, the ultraviolet absorbing layer, and the anti-reflection layer which constitute the dust-proof film of the present invention. After drying and solidifying, the same step is repeatedly performed on the dried and solidified layer in the order of the desired film structure, and the constituent materials of the respective layers are sequentially coated, dried, and cured, and finally, The entire pellicle film on which the laminate is formed on the film formation substrate may be peeled off from the film formation substrate. According to this method, the dust-proof film of the present invention having a small amount of adhesion of foreign matter and having an ultraviolet absorbing layer can be obtained in the same manner as the method for producing a conventional dust-proof film.
由於本發明的防塵薄膜具有吸收200nm~300nm的波長範圍的紫外線(於防塵薄膜的曝光光源側使原料防塵薄膜劣化的主原因)的紫外線吸收層,所以即便不使用高價的氟類樹脂作為原料防塵薄膜也可以成為耐光性優良的防塵薄膜。特別是如上述,在使用矽酮樹脂作為紫外線吸收 層的情況下,可以溶解於溶劑而塗佈紫外線吸收層,因此能夠以與通常製造防塵薄膜的情況同樣的方法來製造本發明的防塵薄膜,從而可以便宜地得到耐久性優良,同時異物少且清潔的防塵薄膜。The dust-proof film of the present invention has an ultraviolet absorbing layer that absorbs ultraviolet rays in a wavelength range of 200 nm to 300 nm (the main cause of deterioration of the raw material dust-proof film on the exposure light source side of the pellicle film), so that it is not used as a raw material without using expensive fluororesin as a raw material. The film can also be a dust-proof film excellent in light resistance. Especially as described above, using an anthrone resin as the ultraviolet absorption In the case of the layer, since the ultraviolet absorbing layer can be applied by dissolving in a solvent, the pellicle film of the present invention can be produced in the same manner as in the case of generally manufacturing a pellicle film, and the durability can be improved inexpensively and the foreign matter is small. Clean dustproof film.
圖1為表示本發明的防塵薄膜組件的外形的截面圖。圖中的符號15為本發明的防塵薄膜,透過接著層13對防塵薄膜組件框架11施加適當的張力而貼附於防塵薄膜組件框架11。符號12是使用時用以將防塵薄膜組件貼著於光罩的黏著層,14為在使用前用以保護黏著層的剝離片。Fig. 1 is a cross-sectional view showing the outer shape of a pellicle according to the present invention. Reference numeral 15 in the drawing is a dust-proof film of the present invention, which is attached to the pellicle frame 11 by applying an appropriate tension to the pellicle frame 11 through the adhesive layer 13. Reference numeral 12 is an adhesive layer for attaching the pellicle to the reticle when in use, and 14 is a release sheet for protecting the adhesive layer before use.
圖2為圖1中的防塵薄膜的A部份的放大截面圖。符號21為原料防塵薄膜,符號22為紫外線吸收層。圖3與圖2相同,為圖1中的防塵薄膜的A部份的放大截面圖,但是除了紫外線吸收層22以外,具有抗反射層23的實施方式的情況。Fig. 2 is an enlarged cross-sectional view showing a portion A of the pellicle film of Fig. 1. Reference numeral 21 is a raw material dustproof film, and reference numeral 22 is an ultraviolet absorbing layer. Fig. 3 is an enlarged cross-sectional view showing a portion A of the pellicle film of Fig. 1, which is the same as Fig. 2, but has an embodiment of the antireflection layer 23 except for the ultraviolet absorbing layer 22.
在利用350nm~450nm的波長範圍的紫外線的所有光微影中,本發明的防塵薄膜組件可以作為防塵薄膜組件來使用,其使用波長、用途、大小等沒有限制。貼附本發明的防塵薄膜的防塵薄膜組件框架11的材料可以從工程塑膠、鋼鐵、不銹鋼、鋁合金、鈦以及其合金、CFRP(Carbon Fiber Reinforced Polymer/Plastic,碳纖維強化聚合物/塑膠)等公知的防塵薄膜組件框架所使用的材料中進行適宜選擇。The pellicle according to the present invention can be used as a pellicle in all photolithography of ultraviolet rays in the wavelength range of 350 nm to 450 nm, and the wavelength, use, size, and the like are not limited. The material of the pellicle frame 11 to which the pellicle of the present invention is attached may be known from engineering plastics, steel, stainless steel, aluminum alloy, titanium and alloys thereof, CFRP (Carbon Fiber Reinforced Polymer/Plastic), and the like. The material used for the pellicle frame is suitably selected.
本發明的防塵薄膜15所使用的原料防塵薄膜21的材料可以從公知的防塵薄膜材料中進行適宜的選擇,也可以 使用氟類樹脂等對350nm以下的光的耐光性優良的高價的材料,但是在本發明中,由於硝化纖維素、乙基纖維素、乙酸纖維素、丙酸纖維素以及乙酸-丙酸纖維素等的纖維素類樹脂、聚乙烯基縮醛樹脂以及環烯烴類樹脂等便宜,因此可適當地使用。The material of the raw material pellicle film 21 used in the pellicle film 15 of the present invention can be appropriately selected from known pellicle materials, or A high-priced material excellent in light resistance to light of 350 nm or less, such as a fluorine-based resin, is used, but in the present invention, nitrocellulose, ethyl cellulose, cellulose acetate, cellulose propionate, and cellulose acetate propionate are used. The cellulose resin, the polyvinyl acetal resin, the cycloolefin resin, and the like are inexpensive, and therefore can be suitably used.
本發明使用的紫外線吸收層22的材料,較佳為在塗佈有防塵薄膜的狀態下,對350nm~450nm的波長範圍中的紫外線的平均透過率為90%以上,同時對200nm~300nm的波長範圍的紫外線的平均透過率為50%以下的有機物質構成,特別是在紫外線的照射下,必須為不產生劣化或發塵問題的材料。從該觀點出發,在本發明中,如上述,較佳為使用不僅透明性高、透過率優良,而且在短波長的紫外線照射下,耐光性也優良的矽酮樹脂。另外,硬化前的矽酮樹脂可以溶解於甲苯,二甲苯等的有機溶劑,所以易於塗佈而形成膜狀。The material of the ultraviolet absorbing layer 22 used in the present invention is preferably such that, in the state in which the pellicle film is applied, the average transmittance of ultraviolet rays in the wavelength range of 350 nm to 450 nm is 90% or more, and the wavelength is 200 nm to 300 nm. The range of ultraviolet rays has an average transmittance of 50% or less, and in particular, it is a material that does not cause deterioration or dust generation under ultraviolet light irradiation. From the above, in the present invention, as described above, it is preferable to use an fluorenone resin which is excellent in light resistance and high in transmittance, and which is excellent in transmittance and short-wavelength ultraviolet rays. Further, since the fluorenone resin before curing can be dissolved in an organic solvent such as toluene or xylene, it is easy to apply and form a film.
本發明所使用的上述矽酮樹脂較佳為導入有甲基、苯基的直鏈矽酮樹脂,或者導入有聚醚、環氧、胺、羰基、芳烷基、氟烷基等的有機改質矽酮樹脂等。在本發明中,從光學的特性以及機械的特性兩方面進行考慮,只要從該些矽酮樹脂中選擇具有所希望之特性之物即可。另外,作為樹脂的形態,較佳為固體且具有所希望的膜強度以及柔軟性的樹脂或橡膠等的形態。本發明中,這些矽酮樹脂或橡膠的硬化機構並不特別限定,可為加熱硬化型、2液硬化型以及加成反應型的任一個。The above fluorenone resin used in the present invention is preferably a linear fluorenone resin into which a methyl group or a phenyl group is introduced, or an organic modification in which a polyether, an epoxy group, an amine group, a carbonyl group, an aralkyl group, a fluoroalkyl group or the like is introduced.矽 ketone resin and the like. In the present invention, in consideration of both optical properties and mechanical properties, it is only necessary to select a material having desired properties from the fluorenone resins. Further, as a form of the resin, a form of a resin or a rubber having a desired film strength and flexibility is preferable. In the present invention, the curing mechanism of the fluorenone resin or the rubber is not particularly limited, and may be any of a heat curing type, a two-liquid curing type, and an addition reaction type.
本發明中,使曝光的光在到達原料防塵薄膜21之前以透過紫外線吸收層22的方式,即以紫外線吸收層位於光的入射側的方式配置本發明的防塵薄膜15。但是,在兼有抗反射層23的紫外線吸收層的情況下,亦可進一步將該紫外線吸收層22重疊設置在出射側(未繪示)。In the present invention, the dust-proof film 15 of the present invention is disposed such that the exposed light passes through the ultraviolet absorbing layer 22 before reaching the raw material pellicle film 21, that is, the ultraviolet absorbing layer is located on the incident side of the light. However, in the case of the ultraviolet absorbing layer having the antireflection layer 23, the ultraviolet absorbing layer 22 may be further provided on the emission side (not shown).
本發明中,如圖3所示,除了紫外線吸收層22以外,亦可進一步設置抗反射層23。圖3的實施方式中,抗反射層23設置在與設有紫外線吸收層22的表面為相反側的原料防塵薄膜21的表面上,但是亦可以在紫外線吸收層22上,進一步設置抗反射層來代替上述情況或者除了上述情況外,亦另外在紫外線吸收層22上進一步設置抗反射層。另外,根據紫外線吸收層22的折射率,亦可在紫外線吸收層22和原料防塵薄膜21的中間設置抗反射層。本發明的防塵薄膜15包括這些所有的方式。In the present invention, as shown in FIG. 3, in addition to the ultraviolet absorbing layer 22, the antireflection layer 23 may be further provided. In the embodiment of Fig. 3, the anti-reflection layer 23 is provided on the surface of the raw material pellicle 21 opposite to the surface on which the ultraviolet absorbing layer 22 is provided, but an anti-reflection layer may be further provided on the ultraviolet absorbing layer 22. Instead of or in addition to the above, an anti-reflection layer is further provided on the ultraviolet absorbing layer 22. Further, depending on the refractive index of the ultraviolet absorbing layer 22, an antireflection layer may be provided between the ultraviolet absorbing layer 22 and the raw material dustproof film 21. The pellicle film 15 of the present invention includes all of these modes.
抗反射層的材料,可以從具有比隣接的層的折射率低的折射率的公知的材料中進行適宜選擇。例如,在設置於包括一般的纖維素類樹脂的原料防塵薄膜表面的情況下,纖維素類樹脂的折射率約為1.5,因此可適當地使用折射率為1.3~1.35左右的氟類樹脂。另外,膜厚或層數等只要根據使用的材料且依照公知技術進行適宜設計即可。The material of the antireflection layer can be suitably selected from known materials having a refractive index lower than that of the adjacent layers. For example, in the case of being provided on the surface of the raw material dust-proof film including a general cellulose resin, the refractive index of the cellulose resin is about 1.5, and therefore a fluorine-based resin having a refractive index of about 1.3 to 1.35 can be suitably used. Further, the film thickness, the number of layers, and the like may be appropriately designed according to the materials to be used and according to a known technique.
根據上述的理由,如使紫外線吸收層22的折射率變為1.5以下,紫外線吸收層22就可以兼有抗反射層的功能,由此,抗反射層亦可以省略,如圖3所示的實施方式那樣,亦可成為除了抗反射層以外,從光的入射側算起,為紫外 線吸收層(兼抗反射層)→原料防塵薄膜→抗反射層的3層的構成形式。該構成中,成膜回數多,成本上不利,但是可以得到耐光性優良、透過率高的効果。特別是光學用途所開發的矽酮樹脂的折射率以1.40至1.50為多,可以適宜地利用。For the above reasons, if the refractive index of the ultraviolet absorbing layer 22 is 1.5 or less, the ultraviolet absorbing layer 22 can function as an antireflection layer, and thus the antireflection layer can be omitted, as shown in FIG. In the same way, in addition to the anti-reflection layer, it is ultraviolet from the incident side of the light. Line absorbing layer (and anti-reflective layer) → raw material dust-proof film → three layers of the anti-reflective layer. In this configuration, the number of film formations is large, which is disadvantageous in terms of cost, but an effect of excellent light resistance and high transmittance can be obtained. In particular, the fluorenone resin developed for optical use has a refractive index of 1.40 to 1.50, and can be suitably used.
另外,關於紫外線吸收層22的膜厚,與其說根據抗反射層的膜厚設計的情況,不如說應該重視紫外線透過特性來進行決定。從原材料的波長-光透過率特性來看,350nm~450nm的波長範圍的範圍中的平均光透過率為90%以上,較佳為盡量為高透過率,另外,必須以200nm~300nm的波長範圍的範圍中平均光透過率成為50%以下的方式來進行考慮,從而決定紫外線吸收層22的膜厚。Further, the film thickness of the ultraviolet absorbing layer 22 is determined not only by the thickness of the antireflection layer but also by the ultraviolet ray transmission property. From the wavelength-light transmittance characteristics of the raw material, the average light transmittance in the wavelength range of 350 nm to 450 nm is 90% or more, preferably as high as possible, and must be in the wavelength range of 200 nm to 300 nm. In consideration of the average light transmittance in the range of 50% or less, the film thickness of the ultraviolet absorbing layer 22 is determined.
以下,對本發明的防塵薄膜的製造方法進行詳述。Hereinafter, a method of producing the pellicle film of the present invention will be described in detail.
本發明的防塵薄膜基本上可以在平滑基板上成膜了的原料防塵薄膜的表面塗佈紫外線吸收層的材料溶液而成膜,藉此獲得。若對成為圖3所示的實施方式的紫外線吸收層-原料防塵薄膜-抗反射層的3層構造的情況進行說明,首先,在蘇打玻璃、石英玻璃、矽晶圓等的平滑研磨了的基板上,將紫外線吸收材料的溶液,用旋轉塗佈法、縫隙及旋轉法(slit and spin method)、縫隙塗佈法等的公知的手段進行塗佈‧乾燥,固化得到紫外線吸收層22。膜厚是從透過率來進行設計決定。接著,將原料防塵薄膜材料的溶液,按光學設計而塗佈在上述成膜的紫外線吸收層22上,使其乾燥固化,得到原料防塵薄膜21。同樣地將抗 反射材料的溶液塗佈在原料防塵薄膜上,使其乾燥固化,在上述成膜的原料防塵薄膜上,進一步設置抗反射層23。The pellicle film of the present invention can be obtained by substantially forming a film of a material of the ultraviolet absorbing layer coated on the surface of the raw material pellicle film formed on the smooth substrate. In the case of the three-layer structure of the ultraviolet absorbing layer-material pellicle-antireflection layer of the embodiment shown in FIG. 3, first, a smooth-polished substrate such as soda glass, quartz glass, or ruthenium wafer is used. The solution of the ultraviolet absorbing material is applied by a known means such as a spin coating method, a slit and spin method, or a slit coating method, dried, and cured to obtain an ultraviolet absorbing layer 22. The film thickness is determined by the design of the transmittance. Next, a solution of the raw material pellicle material is applied to the film-formed ultraviolet absorbing layer 22 by optical design, and dried and solidified to obtain a raw material pellicle film 21. Similarly The solution of the reflective material is applied onto the raw material dustproof film to be dried and solidified, and the antireflection layer 23 is further provided on the raw material dustproof film formed as described above.
上述的各種成膜按照本發明的防塵薄膜的構造設計來進行即可,沒有任何的限定。在此,對基底的紫外線吸收層的成膜方式進行說明,但是亦可將抗反射層設為最下層,其上層成膜原料防塵薄膜,進一步在原料防塵薄膜上進行紫外線吸收層的成膜。該順序可以根據步驟的狀況而採取正逆皆可,但是較佳為將與成膜基板的剝離性高的層作為最下層(=成膜基板側)。另外,視需要亦可在成膜基板表面上進行提高剝離性的表面處理。The various film formations described above may be carried out in accordance with the structural design of the pellicle film of the present invention, without any limitation. Here, the film formation method of the ultraviolet absorbing layer of the base will be described. However, the antireflection layer may be the lowermost layer, the upper layer may be formed into a film of the raw material, and the film of the ultraviolet absorbing layer may be formed on the raw material dustproof film. This order may be reversed depending on the state of the step, but it is preferable to use a layer having high peeling property with the film formation substrate as the lowermost layer (= film formation substrate side). Further, a surface treatment for improving the peeling property may be performed on the surface of the film formation substrate as needed.
如上述,在成膜基板上得到固化的本發明的防塵薄膜15後,使其接著外形與基板外形相同的框狀的剝離夾具(未繪示)黏接,若將其慢慢地拉起剝離,就可以得到具有紫外線吸收層的本發明的防塵薄膜。As described above, the cured pellicle film 15 of the present invention is obtained on the film formation substrate, and then adhered to a frame-shaped peeling jig (not shown) having the same outer shape as the outer shape of the substrate, and is slowly pulled up and peeled off. Thus, the pellicle film of the present invention having an ultraviolet absorbing layer can be obtained.
另外,若將如此得到的本發明的防塵薄膜接著至賦予有接著層的防塵薄膜組件框架上,即可得到本發明的防塵薄膜組件。Further, the dust-proof film of the present invention can be obtained by attaching the dust-proof film of the present invention thus obtained to the pellicle frame to which the adhesive layer is applied.
以下,對本發明用實施例進行進一步說明,但是對本發明並沒有任何限定。Hereinafter, the present invention will be further described by way of examples, but the invention is not limited thereto.
藉由機械加工製作如圖4所示的形狀的A5052鋁合金製防塵薄膜組件框架41。該防塵薄膜組件框架41的形狀是各角部的外尺寸為1146mm x 1392mm,各角部的內寸為1124mm x 1370mm的長方形,厚度為5.8mm,各角部 的形狀內側為R2,外側為R6。另外,在長邊設置4處直徑2.5mm、深度2mm的夾具孔43作為處理用,在短邊以及長邊的2處設置高度2mm、深度3mm的溝42。進一步,在兩長邊設置8處直徑為1.5mm的通氣孔46。The A5052 aluminum alloy pellicle frame 41 of the shape shown in Fig. 4 was produced by machining. The pellicle frame 41 has a shape in which the outer dimensions of the corner portions are 1146 mm x 1392 mm, the inner dimensions of the corner portions are 1124 mm x 1370 mm, and the thickness is 5.8 mm. The inside of the shape is R2 and the outside is R6. Further, four jig holes 43 having a diameter of 2.5 mm and a depth of 2 mm were provided on the long side for processing, and grooves 42 having a height of 2 mm and a depth of 3 mm were provided at two places on the short side and the long side. Further, eight vent holes 46 having a diameter of 1.5 mm were provided on the two long sides.
將該防塵薄膜組件框架運入10級(Class 10)的無塵室,用界面活性劑以及純水好好地洗浄且使其乾燥。然後,在防塵薄膜組件框架的一個端面設置矽酮接著層作為防塵薄膜接著層45,在另一個端面藉由甲苯稀釋矽酮黏著劑(商品名都為KR3700,信越化學工業(股)製),用空氣加壓式分注器(dispenser)進行塗佈而作為光罩黏著層44,加熱使其硬化。然後,以將防塵薄膜組件框架41側面的通氣孔46覆蓋的方式貼附過濾器47。最後,將脫膜劑賦予至表面,將厚度150μm的PET薄膜藉由切割繪圖機(cutting plotter)切斷加工成與防塵薄膜組件框架大致同樣形狀而製作,貼附光罩黏著層保護用剝離片(未繪示),從而框架部分完成。The pellicle frame is transported to a Class 10 clean room, which is well washed with a surfactant and pure water and allowed to dry. Then, an anthracene sulphide layer is disposed on one end surface of the pellicle frame as a pellicle film adhesion layer 45, and an oxime ketone adhesive (trade name is KR3700, manufactured by Shin-Etsu Chemical Co., Ltd.) is diluted on the other end surface by toluene. The film is applied as a mask adhesive layer 44 by an air pressure type dispenser, and is heated and hardened. Then, the filter 47 is attached so as to cover the vent hole 46 on the side surface of the pellicle frame 41. Finally, a release agent was applied to the surface, and a PET film having a thickness of 150 μm was cut into a shape similar to that of the pellicle frame by a cutting plotter, and a release sheet for protecting the adhesive layer of the mask was attached. (not shown), so the frame is partially completed.
另外,在1200mm×1500mm×厚度17mm的平滑研磨的石英製的成膜基板上,將丙酸纖維素(Sigma-Aldrich製)用乙酸丁酯稀釋而成的原料防塵薄膜材料溶液,藉由縫隙塗佈法進行塗佈。此時的塗佈量以乾燥後膜厚成為4.0μm的方式進行設定。將其進行1小時靜置,使溶劑自然乾燥成某種程度後,用IR燈(未繪示)加熱至130℃,從而原料防塵薄膜形成。In addition, a raw material dust-proof film material solution obtained by diluting cellulose propionate (manufactured by Sigma-Aldrich) with butyl acetate on a film-formed substrate made of 1200 mm × 1500 mm × 17 mm thick, was coated with a slit. The coating method is applied. The coating amount at this time was set so that the film thickness after drying became 4.0 micrometer. This was allowed to stand for 1 hour, and the solvent was naturally dried to some extent, and then heated to 130 ° C by an IR lamp (not shown) to form a raw material dust-proof film.
然後,在該原料防塵薄膜上,將進行了加成硬化型矽 酮橡膠(商品名KER-2500,信越化學工業(股)製)A液、B液進行良好混合,用甲苯進行了黏度調整後,藉由縫隙塗佈法進行塗佈而作為紫外線吸收層。此時,以乾燥後膜厚變為1μm的方式進行調整。其後,水平地靜置2小時而使表面平滑,同時將用於稀釋的甲苯蒸發,進一步用IR燈在100℃下進行1小時加熱,然後在150℃下進行5小時加熱,使其完全反應而硬化。該紫外線吸收層的折射率為1.41。將全體冷卻至室溫,使與基板外形同樣形狀的框狀的不銹鋼製剝離夾具接著至紫外線吸收層,邊除電邊慢慢地拉起,得到剝離膜來作為本發明的防塵薄膜。Then, on the raw material pellicle film, an addition hardening type is carried out. Ketone rubber (trade name: KER-2500, manufactured by Shin-Etsu Chemical Co., Ltd.) A liquid and B liquid were well mixed, and the viscosity was adjusted with toluene, and then applied as a UV absorbing layer by a slit coating method. At this time, the film thickness was adjusted so that the film thickness after drying became 1 μm. Thereafter, the surface was allowed to stand horizontally for 2 hours to smooth the surface, and the toluene used for the dilution was evaporated, further heated by an IR lamp at 100 ° C for 1 hour, and then heated at 150 ° C for 5 hours to completely react. And hardened. The ultraviolet absorbing layer had a refractive index of 1.41. The frame-shaped stainless steel peeling jig which has the same shape as the outer shape of the substrate is then cooled to the ultraviolet absorbing layer, and is slowly pulled up while removing electricity to obtain a release film as the pellicle film of the present invention.
然後,將紫外線吸收層以向著防塵薄膜接著層側的方式進行配置,在上述的防塵薄膜組件框架41的接著層45上使具有紫外線吸收層的本發明的防塵薄膜48接著,將防塵薄膜組件框架41周圍的不需要的膜用切割刀切斷除去,本發明的防塵薄膜組件40完成。Then, the ultraviolet absorbing layer is disposed toward the back side of the pellicle film, and the pellicle film 48 of the present invention having the ultraviolet absorbing layer is placed on the adhesive layer 45 of the pellicle frame 41 as described above, and the pellicle frame is placed. The unnecessary film around the 41 is cut and removed with a cutter, and the pellicle assembly 40 of the present invention is completed.
關於得到的本發明的防塵薄膜組件,使用透過率測定機(大塚電子(股)製)對防塵薄膜的光透過率進行測量,結果波長350nm-450nm的全波長範圍中,平均為95.2%的透過率。另一方面,波長200nm~300nm的波長範圍中,透過率的平均值約為48%。In the obtained pellicle film of the present invention, the light transmittance of the pellicle film was measured using a transmittance measuring machine (manufactured by Otsuka Electronics Co., Ltd.), and as a result, an average of 95.2% of the entire wavelength range of 350 nm to 450 nm was transmitted. rate. On the other hand, in the wavelength range of 200 nm to 300 nm, the average value of the transmittance is about 48%.
進一步,對得到的本發明的防塵薄膜組件照射高壓水銀燈,確認到耐光性。對高壓水銀燈(牛尾電機(股)製)以光按照紫外線吸收層→防塵薄膜的順序通過的方式進行配置,對防塵薄膜面照射光強度為5000mW/cm2 的紫外 線,從而上述波長範圍中的光透過率、膜厚的變化以及外觀得到確認。其結果,即使進行實驗至累積能量60萬J,上述光透過率、膜厚以及照射部的外觀亦沒有發現變化。Further, the obtained pellicle of the present invention was irradiated with a high-pressure mercury lamp to confirm light resistance. The high-pressure mercury lamp (manufactured by Oxtail Motor Co., Ltd.) is arranged such that the light passes through the ultraviolet absorbing layer → the pellicle film, and the surface of the pellicle film is irradiated with ultraviolet light having a light intensity of 5000 mW/cm 2 so that the light in the above wavelength range The transmittance, the change in film thickness, and the appearance were confirmed. As a result, even when the experiment was carried out until the cumulative energy was 600,000 J, no change was observed in the light transmittance, the film thickness, and the appearance of the irradiated portion.
與實施例1同樣地製作外尺寸280mm×280mm,內尺寸270mm×280mm,高度4.8mm的A5052鋁合金製防塵薄膜組件框架,在10級的無塵室中使用界面活性劑和純水進行良好地洗浄,使其完全乾燥。其後,在一個端面將矽酮黏著劑(商品名:X-40-3004A,信越化學工業(股)製)作為用以附著於光罩的黏著層,在另一端面塗佈矽酮黏著劑(商品名:KR3700,信越化學工業(股)製)作為用以使本發明的防塵薄膜進行接著的接著劑,以烘箱加熱而使其硬化。然後,將對厚度150μm的PET薄膜塗佈氟改質矽酮而成的剝離片切斷成與框架外尺寸大致同樣形狀的框狀,且貼附於上述黏著層上。An A5052 aluminum alloy pellicle frame having an outer dimension of 280 mm × 280 mm, an inner dimension of 270 mm × 280 mm, and a height of 4.8 mm was produced in the same manner as in Example 1. The surfactant was cleaned in a clean room of 10 stages using a surfactant and pure water. Wash and let it dry completely. Thereafter, an anthrone adhesive (trade name: X-40-3004A, manufactured by Shin-Etsu Chemical Co., Ltd.) was used as an adhesive layer for attaching to the photomask on one end surface, and an anthrone adhesive was coated on the other end surface. (trade name: KR3700, manufactured by Shin-Etsu Chemical Co., Ltd.) As an adhesive for adhering the pellicle film of the present invention, it is cured by oven heating. Then, a release sheet obtained by applying a fluorine-modified fluorenone to a PET film having a thickness of 150 μm was cut into a frame shape having substantially the same shape as the outer dimension of the frame, and attached to the adhesive layer.
接著,使用表面進行了平滑研磨以及進行了良好洗浄的350mm x 350mm x厚度8mm的石英基板,藉由旋轉塗佈法將以氟類溶劑(商品名:EF-L174,三菱材料(股)製)稀釋而成的氟樹脂(商品名:CYTOP,旭硝子(股)製)塗佈於石英基板上。此時的膜厚以乾燥後成為0.07μm的方式進行調整。塗佈後,將成膜基板一邊保持水平,一邊乾燥至溶劑難以流動為止,然後用加熱板加熱到180℃,以將溶劑完全除去。Then, a quartz substrate of 350 mm x 350 mm x 8 mm thick which was smooth-polished and well-cleaned was used, and a fluorine-based solvent (trade name: EF-L174, manufactured by Mitsubishi Materials Co., Ltd.) was spin-coated. A diluted fluororesin (trade name: CYTOP, manufactured by Asahi Glass Co., Ltd.) was applied onto a quartz substrate. The film thickness at this time was adjusted so that it would become 0.07 micrometer after drying. After the application, the film-forming substrate was dried while the solvent was hard to flow while being horizontal, and then heated to 180 ° C with a hot plate to completely remove the solvent.
接著,將丙酸纖維素(Sigma-Aldrich製)藉由乙酸丁 酯進行稀釋,且藉由旋轉塗佈法塗佈在上述氟樹脂層的上面。此時的膜厚以乾燥後的纖維素樹脂層成為4μm的方式進行調整。塗佈後,此時亦一邊將成膜基板保持水平,一邊乾燥至溶劑難以流動為止,然後用加熱板加熱到130℃,以將溶劑完全除去。Next, cellulose propionate (manufactured by Sigma-Aldrich) was treated with butyl acetate. The ester was diluted and coated on the upper surface of the above fluororesin layer by a spin coating method. The film thickness at this time was adjusted so that the cellulose resin layer after drying became 4 micrometers. After the application, the film-forming substrate was also kept horizontal until the solvent was hard to flow, and then heated to 130 ° C with a hot plate to completely remove the solvent.
接著,將有機改質矽酮樹脂(商品名:SCR1011,信越化學工業(股)製)的A液和B液進行良好混合,且藉由旋轉塗佈法塗佈以甲苯調整黏度而成的溶液來作為紫外線吸收層。此時,膜厚以乾燥後變為1μm的方式進行調整。其後,水平地靜置2小時而表面整平,同時對稀釋過的甲苯進行蒸發,進一步,使用IR燈在70℃下進行1小時加熱,然後在150℃下進行5小時加熱,使其完全反應而硬化。此外,該紫外線吸收層的折射率約為1.5。Next, the liquid A and the liquid B of the organically modified fluorenone resin (trade name: SCR1011, manufactured by Shin-Etsu Chemical Co., Ltd.) were well mixed, and a solution obtained by adjusting the viscosity with toluene by a spin coating method was applied. Comes as an ultraviolet absorbing layer. At this time, the film thickness was adjusted so as to become 1 μm after drying. Thereafter, the mixture was allowed to stand horizontally for 2 hours while the surface was leveled, and the diluted toluene was evaporated, and further heated at 70 ° C for 1 hour using an IR lamp, and then heated at 150 ° C for 5 hours to complete it. It hardens by reaction. Further, the ultraviolet absorbing layer has a refractive index of about 1.5.
紫外線吸收層的硬化後,將全體冷卻至室溫,接著與基板外形同樣形狀的鋁合金製框,邊除電邊慢慢剝離而得到本發明的防塵薄膜。使得到的本發明的防塵薄膜的紫外線吸收層向著接著層而接著於上述接著層,框架外側的防塵薄膜用切割刀切斷除去而得到本發明的防塵薄膜組件。對該防塵薄膜組件的防塵薄膜使用透過率測定機(大塚電子(股)製)測量光透過率,結果350nm~450nm的波長範圍中的平均透過率為95.0%,200nm~300nm的波長範圍則約為35%。After the ultraviolet ray absorbing layer is cured, the whole is cooled to room temperature, and then an aluminum alloy frame having the same shape as the outer shape of the substrate is gradually peeled off while being electrically removed to obtain a dust-proof film of the present invention. The ultraviolet absorbing layer of the obtained pellicle film of the present invention is applied to the adhesive layer in the adhesive layer, and the pellicle film on the outer side of the frame is cut and removed by the dicing blade to obtain the pellicle film of the present invention. The light-transmitting rate of the pellicle film of the pellicle film was measured using a transmittance measuring machine (manufactured by Otsuka Electronics Co., Ltd.), and as a result, the average transmittance in the wavelength range of 350 nm to 450 nm was 95.0%, and the wavelength range of 200 nm to 300 nm was approximately It is 35%.
使用與實施例1中使用的防塵薄膜組件框架相同的防 塵薄膜組件框架,製作防塵薄膜組件。使用僅包括上述實施例1中使用的丙酸纖維素的厚度為4μm的單層膜作為此時使用的防塵薄膜。除僅將紫外線吸收層成膜的步驟省略以外,該防塵薄膜的製造方法與實施例1相同。Use the same protection as the pellicle frame used in Example 1. A dust film assembly frame for making a dustproof film assembly. As the pellicle film used at this time, a single layer film having a thickness of 4 μm including only the cellulose propionate used in the above Example 1 was used. The method for producing the pellicle film is the same as that of the first embodiment except that the step of forming only the ultraviolet absorbing layer is omitted.
對該防塵薄膜組件使用透過率測定機(大塚電子(股)製)測量防塵薄膜的光透過率,結果350nm~450nm的波長範圍中的平均透過率為95.0%。對該防塵薄膜組件在與實施例1的情況同樣的條件下進行光照射實驗,結果累積能量變為60萬J時,在照射部發生輕薄的白濁的圓形的照射痕。另外,關於透過率,在350nm~450nm的波長範圍中的平均透過率可以觀察到約2%的降低,同時從測定光譜計算膜厚,結果可以確認到約40nm的膜厚減少。In the pellicle film assembly, the light transmittance of the pellicle film was measured using a transmittance measuring machine (manufactured by Otsuka Electronics Co., Ltd.), and as a result, the average transmittance in the wavelength range of 350 nm to 450 nm was 95.0%. In the same manner as in the case of Example 1, the pellicle was subjected to a light irradiation test, and as a result, when the cumulative energy was 600,000 J, a thin, opaque circular irradiation mark was generated in the irradiation portion. Further, regarding the transmittance, an average transmittance in the wavelength range of 350 nm to 450 nm was observed to be about 2%, and the film thickness was calculated from the measurement spectrum. As a result, it was confirmed that the film thickness of about 40 nm was reduced.
本發明的防塵薄膜,在使用波長350nm~450nm的紫外線的光微影中,儘管使用便宜的纖維素類樹脂等的膜材料,但是亦大幅度地提高耐光性,因此本發明在產業上極有意義。In the light-shielding film of the present invention, in the use of a film material such as a cellulose resin, a light-resistant film of ultraviolet light having a wavelength of 350 nm to 450 nm is used, and the light resistance is greatly improved. Therefore, the present invention is extremely meaningful in the industry. .
11‧‧‧防塵薄膜組件框架11‧‧‧Plastic membrane assembly frame
12‧‧‧黏著層12‧‧‧Adhesive layer
13‧‧‧接著層13‧‧‧Next layer
14‧‧‧剝離片14‧‧‧ peeling film
15‧‧‧本發明的防塵薄膜15‧‧‧The pell film of the invention
21‧‧‧原料防塵薄膜21‧‧‧Material dustproof film
22‧‧‧紫外線吸收層22‧‧‧UV absorbing layer
23‧‧‧抗反射層23‧‧‧Anti-reflective layer
40‧‧‧本發明的防塵薄膜組件40‧‧‧The pell film assembly of the present invention
41‧‧‧防塵薄膜組件框架41‧‧‧Plastic membrane assembly frame
42‧‧‧溝42‧‧‧ditch
43‧‧‧夾具孔43‧‧‧Jig hole
44‧‧‧黏著層44‧‧‧Adhesive layer
45‧‧‧接著層45‧‧‧Next layer
46‧‧‧通氣孔46‧‧‧Ventinel
47‧‧‧過濾器47‧‧‧Filter
48‧‧‧具有紫外線吸收層的本發明的防塵薄膜48‧‧‧Plastic film of the invention having an ultraviolet absorbing layer
圖1為表示本發明的防塵薄膜組件的基本構造的截面圖。Fig. 1 is a cross-sectional view showing the basic structure of a pellicle according to the present invention.
圖2為具有紫外線吸收層的本發明的防塵薄膜的截面圖。2 is a cross-sectional view of a pellicle film of the present invention having an ultraviolet absorbing layer.
圖3為除了紫外線吸收層以外,更具有抗反射層的本發明的防塵薄膜的截面圖。Fig. 3 is a cross-sectional view showing a pellicle film of the present invention having an antireflection layer in addition to the ultraviolet absorbing layer.
圖4為本發明的防塵薄膜組件的概略立體圖。Fig. 4 is a schematic perspective view of a pellicle according to the present invention.
15‧‧‧本發明的防塵薄膜15‧‧‧The pell film of the invention
21‧‧‧原料防塵薄膜21‧‧‧Material dustproof film
22‧‧‧紫外線吸收層22‧‧‧UV absorbing layer
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US10031411B2 (en) | 2014-11-26 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for EUV mask and fabrication thereof |
KR101970059B1 (en) | 2016-04-05 | 2019-04-17 | 아사히 가세이 가부시키가이샤 | Pellicle |
KR20190038369A (en) | 2017-09-29 | 2019-04-08 | 아사히 가세이 가부시키가이샤 | Pellicle |
KR20210146491A (en) * | 2020-05-26 | 2021-12-06 | 삼성디스플레이 주식회사 | Transport complex and transport module including the same |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2938636B2 (en) * | 1991-09-26 | 1999-08-23 | 信越化学工業株式会社 | Pellicle for lithography |
JPH0594006A (en) * | 1991-10-01 | 1993-04-16 | Asahi Chem Ind Co Ltd | Light resistant pellicle |
JPH10139932A (en) * | 1996-11-05 | 1998-05-26 | Asahi Chem Ind Co Ltd | Production of pellicle, and pellicle obtained thereby |
JP2005070120A (en) * | 2003-08-27 | 2005-03-17 | Shin Etsu Chem Co Ltd | Pellicle for lithography |
JP5117578B2 (en) * | 2008-11-21 | 2013-01-16 | 旭化成イーマテリアルズ株式会社 | Pellicle film, pellicle used with TFT liquid crystal panel manufacturing mask, and photomask including the pellicle |
-
2011
- 2011-03-31 JP JP2011077976A patent/JP5279862B2/en not_active Expired - Fee Related
-
2012
- 2012-02-21 KR KR1020120017363A patent/KR20120111997A/en not_active Application Discontinuation
- 2012-03-30 CN CN201210091249.9A patent/CN102736400B/en not_active Expired - Fee Related
- 2012-03-30 TW TW101111217A patent/TWI446104B/en not_active IP Right Cessation
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2013
- 2013-01-28 HK HK13101203.6A patent/HK1174397A1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202017104883U1 (en) | 2016-09-02 | 2017-08-22 | Wei-Ming TSAI | Gas burner and its safety switch |
Also Published As
Publication number | Publication date |
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JP2012212043A (en) | 2012-11-01 |
TW201305721A (en) | 2013-02-01 |
CN102736400A (en) | 2012-10-17 |
CN102736400B (en) | 2014-02-05 |
KR20120111997A (en) | 2012-10-11 |
HK1174397A1 (en) | 2013-06-07 |
JP5279862B2 (en) | 2013-09-04 |
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