TWI444673B - Color filter, method of producing the same, and solid-state image pickup device - Google Patents

Color filter, method of producing the same, and solid-state image pickup device Download PDF

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TWI444673B
TWI444673B TW097140029A TW97140029A TWI444673B TW I444673 B TWI444673 B TW I444673B TW 097140029 A TW097140029 A TW 097140029A TW 97140029 A TW97140029 A TW 97140029A TW I444673 B TWI444673 B TW I444673B
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color filter
metal oxide
etching
colored
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TW200925670A (en
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Tomoyuki Kikuchi
Mitsuji Yoshibayashi
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Fujifilm Corp
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/201Filters in the form of arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0056Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses

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  • Signal Processing (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Color Television Image Signal Generators (AREA)

Description

彩色濾光片及其製法與固體攝像裝置Color filter, its manufacturing method and solid-state imaging device

本發明係關於一種彩色濾光片及其製法與固體攝像裝置,尤其關於一種能夠利用乾蝕刻法以適當製造的彩色濾光片。The present invention relates to a color filter, a method of manufacturing the same, and a solid-state imaging device, and more particularly to a color filter that can be suitably fabricated by dry etching.

近年來,固體攝像元件之高像素化變得顯著,因而逐漸朝向影像尺寸之縮小化。另外,隨著影像尺寸之縮小,組裝於攝像元件中之像素大小將越來越縮小。隨著像素之縮小化,由於攝像元件基本性能之一的受光感度將降低,予以更聚光於受光元件之技術成為必要。In recent years, the high pixelation of solid-state imaging devices has become remarkable, and thus the size of images has been gradually reduced. In addition, as the size of the image is reduced, the size of the pixels assembled in the image pickup element will become smaller and smaller. As the number of pixels is reduced, the light sensitivity of one of the basic performances of the image sensor is reduced, and it is necessary to concentrate the light on the light receiving element.

因此,為了色分離、彩色深淺(color shading)特性、抗混色等之元件特性的維持,彩色濾光片所要求之性能,已逐漸要求薄膜化、矩形化、及各薄膜間無重疊等。Therefore, in order to maintain the characteristics of the color separation, color shading, color mixing, and the like, the performance required for the color filter has been required to be thinned, rectangular, and non-overlapping between the films.

習知,彩色濾光片之製法大多逐漸採用微影術(光刻法)。光刻法係一種製作彩色濾光片的方法,其係藉由將著色硬化性組成物等之感放射線性樹脂組成物塗布於基板上,予以乾燥後而形成塗膜,再進行該塗膜之圖案曝光、顯像、烘烤而形成著色像素,各色重複進行此操作。由於光刻法係其步驟按照光半導體製造之光刻製程,初期投資之抑制為可能的,另外,由於光刻製程之高精確度曝光、重疊精確度等,適合於作為製作彩色濾光片之方法已廣被利用。Conventionally, most of the methods for producing color filters have gradually adopted lithography (lithography). The photolithography method is a method of producing a color filter by applying a radiation-sensitive resin composition such as a colored curable composition onto a substrate, drying it to form a coating film, and then performing the coating film. The pattern is exposed, developed, baked to form colored pixels, and the colors are repeated for this operation. Since the photolithography method is based on the photolithography process of photo-semiconductor fabrication, the initial investment suppression is possible, and the high-precision exposure, the overlay accuracy, etc. of the photolithography process are suitable for the production of color filters. Methods have been widely used.

但是,利用光刻法以製作彩色濾光片之情形,由於使用感光性組成物,除了光起始劑、單體等之感光性硬化成分之外,還含有鹼可溶性樹脂之必要。因此,總固形成分中之著色劑的含量將變低,其結果,具有膜厚變厚之缺點。若含有光硬化性成分時,實現0.7μm以下之彩色濾光片的膜厚為困難的。其結果,使光之穿透率與彩色深淺特性惡化,成為容易發生混色之原因。However, in the case of producing a color filter by photolithography, it is necessary to use an alkali-soluble resin in addition to a photosensitive curing agent such as a photoinitiator or a monomer because a photosensitive composition is used. Therefore, the content of the coloring agent in the total solid content becomes low, and as a result, it has a drawback that the film thickness becomes thick. When a photocurable component is contained, it is difficult to achieve a film thickness of a color filter of 0.7 μm or less. As a result, the light transmittance and the color depth characteristics are deteriorated, which causes a color mixture to easily occur.

再者,隨著光刻法之解像度接近光之繞射限度,彩色濾光片之形狀將有變得無法成為矩形之傾向。例如,在形成有第1彩色濾光片之載體上形成第2彩色濾光片的形態之情形,也具有在第1彩色濾光片上重疊第2彩色濾光片而容易導致混色不良之問題。Furthermore, as the resolution of the photolithography approaches the diffraction limit of light, the shape of the color filter tends to be incapable of becoming a rectangle. For example, in the case where the second color filter is formed on the carrier on which the first color filter is formed, the second color filter is superimposed on the first color filter, which may cause a problem of poor color mixing. .

為了克服如上述之問題點,有人提案一種經由乾蝕刻而圖案化彩色濾光片之方法(例如,參照專利文獻1)。In order to overcome the above problems, a method of patterning a color filter by dry etching has been proposed (for example, refer to Patent Document 1).

專利文獻1:日本專利特開2006-222291號公報Patent Document 1: Japanese Patent Laid-Open No. 2006-222291

於利用乾蝕刻法之彩色濾光片製造中,為了蝕刻既定之彩色濾光片的不要部分、與其下層的平坦化層,如第3圖所示,於各彩色濾光片18、20之間,具有膜厚不均勻形成的問題。In the manufacture of a color filter using a dry etching method, in order to etch an unnecessary portion of a predetermined color filter and a planarization layer of the lower layer thereof, as shown in FIG. 3, between the color filters 18 and 20 There is a problem that the film thickness is unevenly formed.

另外,通常過度蝕刻處理為必要,載體12之損壞(削減)有發生的傾向。第4A圖~第4C圖係概略顯示經由乾蝕刻而形成彩色濾光片之步驟。例如,具有經由乾蝕刻以去除載體12上之著色層18而形成既定圖案之情形(第4A圖)、連去除著色層18之領域的載體12之部分也將被削減,而發生高低差32之情形(第4B圖)。如此所述,一旦載體12上發生高低差32時,著色層18之厚度將發生偏異(第4C圖),平坦性將惡化而容易招致色離性能之降低。如此方式,若採用乾蝕刻法時,具有因蝕刻而造成基底之削減、與膜厚之不均勻性、色離性惡化等之問題。Further, in general, excessive etching treatment is necessary, and damage (cutage) of the carrier 12 tends to occur. 4A to 4C schematically show the steps of forming a color filter by dry etching. For example, in the case where a predetermined pattern is formed by dry etching to remove the coloring layer 18 on the carrier 12 (Fig. 4A), the portion of the carrier 12 in the field of removing the colored layer 18 is also cut, and a height difference of 32 occurs. Situation (Fig. 4B). As described above, when the height difference 32 occurs on the carrier 12, the thickness of the colored layer 18 is different (Fig. 4C), and the flatness is deteriorated to easily cause a decrease in the color separation performance. In this manner, when the dry etching method is employed, there is a problem that the base is reduced by etching, the unevenness of the film thickness, and the coloring property are deteriorated.

另外,檢測出蝕刻終點後,為了從載體上去除殘渣,將有進行過度蝕刻處理之情形。此時,若有機膜存在於載體上時,進行過度蝕刻處理之情形下,規避載體損壞之發生為困難的。Further, after the end of the etching is detected, in order to remove the residue from the carrier, there is a case where excessive etching treatment is performed. At this time, in the case where the organic film is present on the carrier, it is difficult to avoid the occurrence of damage of the carrier in the case of performing an over-etching treatment.

尤其,即使在為了製作彩色濾光片之矩形形狀而使用異方向性的乾蝕刻之氟系氣體,且將SOG等之SiO2 系透明膜導入彩色濾光片下層之情形,也具有蝕刻承受性缺乏、載體(基底)之部分被削減、各著色層間之膜厚容易不均勻形成之問題。In particular, even when a fluorine-based gas which is dry-etched by an isotropic direction is used for the rectangular shape of the color filter, and a SiO 2 -based transparent film such as SOG is introduced into the lower layer of the color filter, etching tolerance is obtained. There is a problem that the portion of the carrier (substrate) is reduced, and the film thickness between the respective colored layers is easily unevenly formed.

本發明係有鑑於上述問題點所完成的,目的在於提供一種彩色濾光片及其製法、與具備此彩色瀘光片之固體攝像裝置,該彩色瀘光片即使在應用乾蝕刻法加以製造之情形下,基底之削減也將被抑制,著色層之厚度均勻性為高的。The present invention has been made in view of the above problems, and an object thereof is to provide a color filter, a method of manufacturing the same, and a solid-state imaging device including the color light-emitting sheet, which is manufactured by applying a dry etching method. In this case, the reduction of the substrate is also suppressed, and the thickness uniformity of the colored layer is high.

解決問題之技術手段Technical means of solving problems

為了達成上述目的,於本發明中,提供一種彩色濾光片及其製法與固體攝像裝置:In order to achieve the above object, in the present invention, a color filter, a method of manufacturing the same, and a solid-state imaging device are provided:

<1>一種彩色濾光片,其特徵係在載體上設置有含有由Ti、Ta、Zn與Zr所選出之至少一種金屬的氧化物層,隔著含有該金屬氧化物之層而形成有著色層。<1> A color filter characterized in that an oxide layer containing at least one metal selected from Ti, Ta, Zn, and Zr is provided on a carrier, and coloring is formed through a layer containing the metal oxide. Floor.

<2>如揭示於<1>之彩色濾光片,其中含有該金屬氧化物之層的厚度為0.2μm以下。<2> The color filter according to <1>, wherein the layer containing the metal oxide has a thickness of 0.2 μm or less.

<3>如揭示於<1>或<2>之彩色濾光片,其中含有該金屬氧化物之層為非晶質狀之TiO2 層。<3> A color filter according to <1> or <2>, wherein the layer containing the metal oxide is an amorphous TiO 2 layer.

<4>一種彩色濾光片之製法,其特徵係包含:<4> A method for producing a color filter, the method comprising:

在載體上形成含有由Ti、Ta、Zn與Zr所選出之至少一種金屬的氧化物層的步驟;Forming a step of forming an oxide layer containing at least one metal selected from Ti, Ta, Zn, and Zr on the support;

在含有該金屬氧化物之層上形成著色層的步驟;及a step of forming a colored layer on a layer containing the metal oxide; and

藉由乾蝕刻以去除該著色層之部分,而形成彩色濾光片之圖案的步驟。The step of forming a pattern of color filters by dry etching to remove portions of the colored layer.

<5>如揭示於<4>之彩色濾光片之製法,其中使用含有由Ti、Ta、Zn與Zr所選出之至少一種金屬的金屬醇鹽所得的先驅物聚合物與溶劑之組成物,利用溶膠凝膠法以形成含有該金屬氧化物之層。<5> The method for producing a color filter according to <4>, wherein a composition of a precursor polymer and a solvent obtained by using a metal alkoxide containing at least one metal selected from Ti, Ta, Zn and Zr, A sol-gel method is used to form a layer containing the metal oxide.

<6>一種固體攝像裝置,其特徵係具備如揭示於<1>~<3>之彩色濾光片。<6> A solid-state imaging device characterized by comprising a color filter as disclosed in <1> to <3>.

發明之效果Effect of invention

若根據本發明,即使採用乾蝕刻法加以製造之情形下,也能夠提供一種彩色濾光片及其製法與具備其彩色濾光片之固體攝像裝置,其基底之削減將被抑制,著色層厚度之均勻性為高的。According to the present invention, even in the case of manufacturing by dry etching, it is possible to provide a color filter, a method of manufacturing the same, and a solid-state imaging device having the color filter thereof, and the reduction of the substrate is suppressed, and the thickness of the colored layer is suppressed. The uniformity is high.

發明之實施形態Embodiment of the invention

以下,茲將參照附隨的圖示,針對本發明具體加以說明。Hereinafter, the present invention will be specifically described with reference to the accompanying drawings.

本發明人等係針對利用乾蝕刻法以製造彩色濾光片之技術,不斷鑽研之後發現:藉由在載體上形成特定之金屬氧化物層,隔著含有該金屬氧化物之層而形成著色層,能夠有效抑制因乾蝕刻所造成之載體的剝離,進一步重複研究而達成本發明。The present inventors have intensively studied the technique of manufacturing a color filter by dry etching, and found that a coloring layer is formed by forming a specific metal oxide layer on a carrier and interposing a layer containing the metal oxide. The peeling of the carrier by dry etching can be effectively suppressed, and the present invention can be further repeated.

第1圖係顯示具有關於本發明之彩色濾光片的固體攝像裝置之一實施形態。此固體攝像裝置10係在半導體基板(載體)12之單面上配列發光二極體14所形成,於基板12之相反側面,形成有含有由Ti、Ta、Zn、及Zr所選出之金屬氧化物層16。於金屬氧化物層16之上,對應於各發光二極體14而使2色之著色層(彩色濾光片)18、20交替顯現於基板12之面內的方式來予以形成。再者,設置有覆蓋各色之著色層18、20所平坦化之平坦化層22,與在平坦化層22上且以對應於著色層18、20之形成區域的方式來設置微透鏡24。Fig. 1 is a view showing an embodiment of a solid-state imaging device having a color filter according to the present invention. The solid-state imaging device 10 is formed by arranging the light-emitting diodes 14 on one surface of a semiconductor substrate (carrier) 12, and is formed on the opposite side of the substrate 12 to contain metal oxide selected from Ti, Ta, Zn, and Zr. Object layer 16. On the metal oxide layer 16, a color layer (color filter) 18 and 20 of two colors are alternately formed on the surface of the substrate 12 in accordance with each of the light-emitting diodes 14. Further, a flattening layer 22 which is flattened to cover the color layers 18 and 20 of the respective colors is provided, and the microlens 24 is provided on the planarizing layer 22 so as to correspond to the formation regions of the colored layers 18 and 20.

具備有如此本發明之彩色濾光片的固體攝像裝置10係特別適合於採用乾蝕刻法加以製造之情形。以下,針對具備有關本發明之彩色濾光片及具備它之固體攝像裝置10之製法,具體加以說明。The solid-state imaging device 10 having the color filter of the present invention is particularly suitable for the case of being manufactured by dry etching. Hereinafter, a method of manufacturing the color filter according to the present invention and the solid-state imaging device 10 including the same will be specifically described.

第2A圖~第2C圖係顯示製造有關本發明之彩色濾光片之方法的步驟之部分。2A to 2C are parts showing steps of a method of manufacturing the color filter of the present invention.

[金屬氧化物層形成步驟][Metal oxide layer forming step]

首先,在載體12上,設置含有由Ti、Ta、Zn與Zr所選出之至少一種金屬的氧化物層16。還有,載體12最好因應於用途加以選擇,例如,製造固體攝像裝置之情形,能夠使用半導體基板;製造液晶顯示裝置之情形,則能夠使用玻璃基板。First, on the carrier 12, an oxide layer 16 containing at least one metal selected from Ti, Ta, Zn and Zr is provided. Further, the carrier 12 is preferably selected depending on the application. For example, in the case of manufacturing a solid-state imaging device, a semiconductor substrate can be used, and in the case of manufacturing a liquid crystal display device, a glass substrate can be used.

在載體12上,形成金屬氧化物層16之方法並未予以特別限定,例如,能夠利用蒸鍍法、濺鍍法、CVD法、塗布方法的溶膠凝膠法而形成。基於對光觸媒作用不活性之觀點,在載體12上所形成的金屬氧化物層16較佳為非晶質狀之金屬氧化物層,尤以非晶質狀之TiO2 層特別理想。例如,使用含有由Ti、Ta、Zn與Zr所選出之一種金屬的金屬醇鹽所得的先驅物聚合物與溶劑的組成物,利用溶膠凝膠法以形成金屬氧化物層16。藉此,能夠在載體12上形成由非晶質狀之金屬氧化物而成的層。還有,也可以形成含有上述金屬氧化物之中的二種以上金屬氧化物之層。The method of forming the metal oxide layer 16 on the carrier 12 is not particularly limited, and for example, it can be formed by a sol-gel method using a vapor deposition method, a sputtering method, a CVD method, or a coating method. The metal oxide layer 16 formed on the carrier 12 is preferably an amorphous metal oxide layer from the viewpoint of inactivation of the photocatalyst, and particularly preferably an amorphous TiO 2 layer. For example, a composition of a precursor polymer and a solvent obtained by using a metal alkoxide of a metal selected from Ti, Ta, Zn, and Zr is used to form the metal oxide layer 16 by a sol-gel method. Thereby, a layer made of an amorphous metal oxide can be formed on the carrier 12. Further, a layer containing two or more kinds of metal oxides among the above metal oxides may be formed.

溶膠凝膠法係將該先驅物聚合物(金屬醇鹽衍生物)塗布於基板12上。加速乾燥步驟中之水解,進一步於加熱步驟中脫水縮合而形成金屬氧化物。The sol-gel method coats the precursor polymer (metal alkoxide derivative) on the substrate 12. The hydrolysis in the drying step is accelerated, and further dehydration condensation in the heating step to form a metal oxide.

於溶膠凝膠法所用之先驅物聚合物係以通式M(OR1 )a 或R2 b M(OR3 )c 所示,以此等之部分水解物及縮合物所選出之一種以上的金屬醇鹽衍生物作為主要成分,將此先驅物聚合物溶於有機溶劑後而予以製造。M係由Ti、Ta、Zn與Zr所選出之金屬原子。較佳為Ti。R1 、R2 、R3 係各自獨立之碳數1~8的烷基,可列舉:甲基、乙基、異丙基、正丁基、異丁基、正戊基、辛基。a係M之價數,b、c分別係1以上之整數,b+c係M之價數。如此之先驅物聚合物係市場上可取得的,例如,Rasa工業(股)公司製之商品名:TI-44、VR7;高純度化學研究所(股)公司製之商品名:SYM-T105、SYM-ZR04、SYM-ZN20等。The precursor polymer used in the sol-gel method is represented by the formula M(OR 1 ) a or R 2 b M(OR 3 ) c , and more than one selected from the partial hydrolyzate and the condensate. The metal alkoxide derivative is used as a main component, and this precursor polymer is dissolved in an organic solvent to be produced. M is a metal atom selected from Ti, Ta, Zn and Zr. It is preferably Ti. Examples of the alkyl group having 1 to 8 carbon atoms independently of R 1 , R 2 and R 3 include a methyl group, an ethyl group, an isopropyl group, a n-butyl group, an isobutyl group, a n-pentyl group and an octyl group. a is the valence of M, b and c are each an integer of 1 or more, and b+c is the valence of M. Such a precursor polymer is commercially available, for example, the trade name of Rasa Industries Co., Ltd.: TI-44, VR7; the trade name of the High Purity Chemical Research Institute Co., Ltd.: SYM-T105, SYM-ZR04, SYM-ZN20, etc.

有機溶劑係可溶解上述之先驅物聚合物,選擇不對基板12造成影響之有機溶劑。具體而言,可列舉:甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇等之醇類;醋酸乙酯、醋酸丁酯等之酯類;其他之醚類或酮類。有機溶劑可以為上述之單獨一種,也可以為二種以上之混合。The organic solvent dissolves the above-mentioned precursor polymer and selects an organic solvent which does not affect the substrate 12. Specific examples thereof include alcohols such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, and 2-butanol; esters such as ethyl acetate and butyl acetate; and other ethers; Class or ketone. The organic solvent may be used alone or in combination of two or more.

有機溶劑通常成為70質量%以上,較佳成為80~99.9質量%之方式來設定。另外,先驅物聚合物等之固形成分的濃度為30質量%以下,較佳為0.01~20質量%。The organic solvent is usually set to be 70% by mass or more, preferably 80 to 99.9% by mass. Further, the concentration of the solid component of the precursor polymer or the like is 30% by mass or less, preferably 0.01 to 20% by mass.

金屬氧化物層16能夠將含有上述之先驅物聚合物與溶劑的組成物直接塗布於載體12上,或是隔著其他層而塗布於載體12上,其後,乾燥而形成塗布膜之後,藉由實施加熱處理而形成。The metal oxide layer 16 can directly apply the composition containing the precursor polymer and the solvent described above to the carrier 12, or can be applied to the carrier 12 via another layer, and then dried to form a coating film. It is formed by performing heat treatment.

將含有先驅物聚合物與溶劑之組成物塗布於載體12上之方法,能夠採用旋轉塗布、狹縫塗布、澆鑄塗布、輥塗布等之塗布方法。A method of applying a composition containing a precursor polymer and a solvent onto the carrier 12 can be carried out by a coating method such as spin coating, slit coating, cast coating, or roll coating.

金屬氧化物層16之具體厚度較佳成為0.01μm~0.20μm,更佳成為0.05μm~0.10μm之方式來形成塗布膜。若金屬氧化物層16之厚度為0.01μm以上的話,能夠更確實抑制因後述之乾蝕刻所造成之對載體12的損壞。另一方面,若為0.20μm以下的話,能夠有效抑制因金屬氧化物層16所造成之光穿透率的降低。The specific thickness of the metal oxide layer 16 is preferably from 0.01 μm to 0.20 μm, more preferably from 0.05 μm to 0.10 μm, to form a coating film. When the thickness of the metal oxide layer 16 is 0.01 μm or more, damage to the carrier 12 due to dry etching described later can be more reliably suppressed. On the other hand, when it is 0.20 μm or less, the decrease in the light transmittance due to the metal oxide layer 16 can be effectively suppressed.

再者,相對於可見光區域之光,金屬氧化物層16係透明,折射率較佳為1.7~2.0,更佳為1.7~1.9。期望金屬氧化物層16係形成以使反射及干涉之影響成為約最小限度之膜厚與折射率。Further, the metal oxide layer 16 is transparent with respect to light in the visible light region, and the refractive index is preferably from 1.7 to 2.0, more preferably from 1.7 to 1.9. It is desirable that the metal oxide layer 16 be formed such that the effects of reflection and interference are about a minimum film thickness and refractive index.

塗布膜之加熱處理也可以與塗布後之乾燥同時進行,另外,也可以於塗布乾燥後設置其他途徑之熱硬化步驟。此加熱處理係使用烘箱、熱板等之習知加熱手段,具體而言,能夠於130℃~400℃,較佳於150℃~280℃之條件下,於10秒鐘~3小時、更佳於60秒鐘~60分鐘之範圍進行。但是,若考量生產性時,硬化所需要的時間越短越好。The heat treatment of the coating film may be carried out simultaneously with the drying after application, or a heat hardening step of another route may be provided after the coating is dried. This heat treatment uses a conventional heating means such as an oven or a hot plate, and specifically, it can be at 130 to 400 ° C, preferably 150 to 280 ° C, for 10 seconds to 3 hours, more preferably. It is carried out in the range of 60 seconds to 60 minutes. However, when considering productivity, the time required for hardening is as short as possible.

根據加熱處理之溫度及時間,能夠控制金屬氧化物層16之結晶化度。具體而言,金屬氧化物層16之結晶化度為形成10%以下,較佳為形成3%以下之結晶化度。The degree of crystallization of the metal oxide layer 16 can be controlled according to the temperature and time of the heat treatment. Specifically, the metal oxide layer 16 has a degree of crystallization of 10% or less, preferably 3% or less.

若金屬氧化物層16之結晶化度為10%以下的話,光觸媒作用將成為不活性,例如,即使於載體12與金屬氧化物層16之間形成有機層之情形下,抑制緊密連接之有機層的劣化將成為可能。If the degree of crystallization of the metal oxide layer 16 is 10% or less, the photocatalytic action becomes inactive, for example, in the case where an organic layer is formed between the carrier 12 and the metal oxide layer 16, the tightly bonded organic layer is suppressed. Deterioration will be possible.

[著色層形成步驟][Coloring layer forming step]

在載體12上形成金屬氧化物層16之後,在金屬氧化物層16上形成著色層18。After the metal oxide layer 16 is formed on the carrier 12, a coloring layer 18 is formed on the metal oxide layer 16.

著色層18係構成彩色瀘光片之像素。著色層18較佳為經由含有著色劑之硬化性組成物所形成。該硬化性組成物可列舉:著色光硬化性組成物及非感光性之著色熱硬化性組成物,基於分光特性之觀點,較佳為使用非感光性之著色熱硬化性組成物以形成著色層18。The colored layer 18 constitutes a pixel of a color calender. The colored layer 18 is preferably formed via a curable composition containing a colorant. Examples of the curable composition include a colored photocurable composition and a non-photosensitive colored thermosetting composition. From the viewpoint of spectral characteristics, it is preferred to use a non-photosensitive colored thermosetting composition to form a colored layer. 18.

(A)著色光硬化性組成物(A) colored photocurable composition

本發明所能夠使用之著色光硬化性組成物係至少含有著色劑與光硬化性成分之物。其中,所謂「光硬化性成分」係一種光刻法通常所用之光硬化性組成物,能夠使用至少含有黏結劑樹脂(鹼可溶性樹脂等)、感光性聚合成分(光聚合成單體等)、光聚合起始劑等之組成物。The colored photocurable composition which can be used in the present invention contains at least a coloring agent and a photocurable component. In addition, the "photocurable component" is a photocurable composition which is usually used in a photolithography method, and at least a binder resin (such as an alkali-soluble resin) and a photosensitive polymer component (photopolymerization into a monomer) can be used. A composition of a photopolymerization initiator or the like.

針對著色光硬化性組成物,例如,能夠適合使用日本專利特開2005-326453號公報之段落編號0017~0064揭示的事項。For the colored photocurable composition, for example, the matters disclosed in paragraph numbers 0017 to 0064 of JP-A-2005-326453 can be suitably used.

於本發明中之著色層形成步驟係包含:將上述之著色光硬化性組成物預先塗布於載體12上所設置之金屬氧化物層16上,之後,乾燥而形成塗布膜的步驟(塗膜形成步驟);及實施加熱處理的步驟(後烘烤步驟)。The color layer forming step in the present invention includes the step of previously applying the above-described color-light-curable composition to the metal oxide layer 16 provided on the carrier 12, followed by drying to form a coating film (coating film formation) Step); and performing a heat treatment step (post-baking step).

(B)著色熱硬化性組成物(B) coloring thermosetting composition

於本發明中,如上所述,能夠使用非感光性之著色熱硬化性組成物以形成著色層18。本發明中之非感光性之著色熱硬化性組成物係含有著色劑與熱硬化性化合物,總固形成分中之該著色劑濃度較佳為50質量%以上、低於100質量%。In the present invention, as described above, the non-photosensitive colored thermosetting composition can be used to form the colored layer 18. In the non-photosensitive color thermosetting composition of the present invention, the coloring agent and the thermosetting compound are contained, and the concentration of the coloring agent in the total solid content is preferably 50% by mass or more and less than 100% by mass.

-著色劑--Colorant-

能夠使用於本發明之著色劑並未予以特別限定,能夠使用習知各種的染料或顏料之一種、或混合二種以上而使用。The coloring agent which can be used in the present invention is not particularly limited, and one of various conventional dyes or pigments or a mixture of two or more kinds can be used.

能夠使用於本發明之顏料,可列舉:習知各種的無機顏料或有機顏料。另外,無論是無機顏料或是有機顏料,若考量較佳為高光穿透率之時,較佳為使用平均粒徑儘量小的顏料;若考量操作性等之時,上述顏料之平均粒徑較佳為0.01μm~0.1μm,更佳為0.01μm~0.05μm。Examples of the pigment which can be used in the present invention include various conventional inorganic pigments or organic pigments. Further, in the case of an inorganic pigment or an organic pigment, it is preferred to use a pigment having an average particle diameter as small as possible in consideration of high light transmittance; if the handleability is considered, the average particle diameter of the pigment is higher. It is preferably from 0.01 μm to 0.1 μm, more preferably from 0.01 μm to 0.05 μm.

於本發明中,較佳能夠使用之顏料可列舉下列之顏料,但是並不受此等顏料所限定:In the present invention, preferred pigments can be exemplified by the following pigments, but are not limited by such pigments:

C. I.顏料/黃11、24、108、109、110、138、139、150、151、154、167、180、185;C. I. Pigment/Yellow 11, 24, 108, 109, 110, 138, 139, 150, 151, 154, 167, 180, 185;

C. I.顏料/橙36、71;C. I. Pigment/Orange 36, 71;

C. I.顏料/紅122、150、171、175、177、209、224、242、254、255、264;C. I. Pigment/Red 122, 150, 171, 175, 177, 209, 224, 242, 254, 255, 264;

C. I.顏料/紫19、23、32;C. I. Pigment/Purple 19, 23, 32;

C. I.顏料/藍15:1、15:3、15:6、16、22、60、66;C. I. Pigment/Blue 15:1, 15:3, 15:6, 16, 22, 60, 66;

C. I.顏料/棕1。C. I. Pigment/Brown 1.

於本發明中,著色劑為染料之情形下,能夠均勻溶解於熱硬化性樹脂組成物中而得到非感光性之熱硬化性著色樹脂組成物。In the case where the coloring agent is a dye, the coloring agent can be uniformly dissolved in the thermosetting resin composition to obtain a non-photosensitive thermosetting coloring resin composition.

於本發明中,能夠作為著色劑使用之染料並無特別之限制,能夠使用習知之染料作為彩色瀘光片用。In the present invention, the dye which can be used as the coloring agent is not particularly limited, and a conventional dye can be used as the color calendering sheet.

化學構造能夠使用吡唑偶氮系、苯胺基偶氮系、三苯基甲烷系、蒽醌系、蒽吡啶酮系、亞苄系、氧雜菁(Oxonol)系、吡唑三唑偶氮系、吡啶酮偶氮系、菁系、吩噻系、吡咯并吡唑甲亞胺系、呫噸系、酞菁系、苯并吡喃系、靛藍系等之染料。As the chemical structure, a pyrazole azo system, an anilino azo system, a triphenylmethane system, an anthracene system, an anthrapyridone system, a benzene group, an oxophthalocyanine (Oxonol) system, or a pyrazole triazole azo system can be used. , pyridone azo, phthalocyanine, phenothiazine A dye such as a pyrrolopyrazine-imine, a xanthene, a phthalocyanine, a benzopyran or an indigo.

雖然本發明中之著色熱硬化性組成物的總固形成分中之著色劑含率並未予以特別限定,較佳為50質量%以上、100質量%以下,更佳為55質量%以上、90質量%以下。藉由設為50質量%以上,彩色瀘光片能夠得到適當之色度。另外,藉由設為低於100質量%,能夠充分加速光硬化,故能夠抑制作為膜之強度降低。The coloring agent content in the total solid content of the colored thermosetting composition of the present invention is not particularly limited, but is preferably 50% by mass or more and 100% by mass or less, more preferably 55% by mass or more and 90% by mass. %the following. By setting the content to 50% by mass or more, the color calender sheet can obtain an appropriate chromaticity. In addition, since the photocuring can be sufficiently accelerated by setting it to less than 100% by mass, it is possible to suppress a decrease in strength of the film.

一熱硬化性化合物一Thermosetting compound

於本發明可使用之熱硬化性化合物,若為經由加熱而可進行膜硬化之物的話,並無特別之限定,例如,能夠使用具有熱硬化性官能基之化合物。該熱硬化性化合物,例如,較佳為具有環氧基、羥甲基、烷氧甲基及醯氧甲基所選出之一基之化合物。The thermosetting compound which can be used in the present invention is not particularly limited as long as it can be cured by heating. For example, a compound having a thermosetting functional group can be used. The thermosetting compound is, for example, preferably a compound having one selected from the group consisting of an epoxy group, a methylol group, an alkoxymethyl group and a decyloxymethyl group.

進一步更佳之熱硬化性化合物,可列舉:(a)環氧化物、(b)利用由羥甲基、烷氧甲基及醯氧甲基所選出之至少一取代基所取代之三聚氰胺化合物、三聚氰二胺化合物、甘脲化合物或尿素化合物、(c)利用由羥甲基、烷氧甲基及醯氧甲基所選出之至少一取代基所取代之酚化合物、萘酚化合物或羥蒽化合物。其中,尤以作為該熱硬化性化合物之多官能環氧化物特別理想。Further preferred thermosetting compounds include (a) an epoxide, (b) a melamine compound substituted with at least one substituent selected from a methylol group, an alkoxymethyl group and a fluorenyloxymethyl group, and three a polycyanodiamine compound, a glycoluril compound or a urea compound, (c) a phenol compound, a naphthol compound or a oxindole substituted with at least one substituent selected from a methylol group, an alkoxymethyl group and a fluorenyloxymethyl group Compound. Among them, a polyfunctional epoxide which is particularly useful as the thermosetting compound is particularly preferable.

著色熱硬化性組成物中之該熱硬化性化合物的總含量係根據基材而有所不同,相對於該硬化性組成物之總固形成分(質量),較佳為0.1~50質量%,更佳為0.2~40質量%,尤以1~35質量%特別理想。The total content of the thermosetting compound in the colored thermosetting composition varies depending on the substrate, and is preferably from 0.1 to 50% by mass based on the total solid content (mass) of the curable composition. It is preferably from 0.2 to 40% by mass, particularly preferably from 1 to 35% by mass.

-各種添加物-- Various additives -

於本發明中之著色熱硬化性組成物中,必要時能夠摻合各種添加物,例如,黏結劑、硬化劑、硬化觸媒、溶劑、填充劑、上述以外之高分子化合物、界面活性劑、密合促進劑、抗氧化劑、紫外線吸收劑、抗凝結劑、分散劑等。In the colored thermosetting composition of the present invention, various additives such as a binder, a hardener, a curing catalyst, a solvent, a filler, a polymer compound other than the above, a surfactant, and the like may be blended as necessary. Adhesion promoter, antioxidant, ultraviolet absorber, anti-coagulant, dispersant, and the like.

-黏著劑--Adhesives -

該黏著劑添加於顏料分散液調製時之情形為多的,使鹼可溶性並非必要,最好可溶於有機溶劑。When the adhesive is added to the pigment dispersion, the amount of the pigment dispersion is large, so that alkali solubility is not necessary, and it is preferably soluble in an organic solvent.

該黏結劑較佳為線狀有機高分子聚合物,且可溶於有機溶劑之物。如此之線狀有機高分子聚合物係於側鏈上具有羧酸之聚合物,例如,如已揭示於日本專利特開昭59-44615號、特公昭54-34327號、特公昭58-12577號、特公昭54-25957號、特開昭59-53836號、特開昭59-71048號之各公報所揭示之甲基丙烯酸共聚物、丙烯酸共聚物、衣康酸共聚物、巴豆酸共聚物、馬來酸共聚物、部分酯化馬來酸共聚物等,另外,同樣在側鏈具上有羧酸之酸性纖維素衍生物為有用的。The binder is preferably a linear organic high molecular polymer and is soluble in an organic solvent. Such a linear organic polymer is a polymer having a carboxylic acid in a side chain, and is disclosed, for example, in Japanese Patent Laid-Open No. 59-44615, Japanese Patent Publication No. Sho 54-34327, and No. Sho. a methacrylic acid copolymer, an acrylic copolymer, an itaconic acid copolymer, a crotonic acid copolymer disclosed in each of the publications of Japanese Patent Publication No. Sho 54-25957, JP-A-59-53836, and JP-A-59-71048. A maleic acid copolymer, a partially esterified maleic acid copolymer or the like, and an acid cellulose derivative having a carboxylic acid in a side chain are also useful.

基於耐熱性之觀點,於此等各種黏著劑之中,較佳為聚羥基苯乙烯系樹脂、聚矽氧烷系樹脂、丙烯酸系樹脂、丙烯醯胺系樹脂、丙烯酸/丙烯醯胺共聚物樹脂,基於顯像性控制之觀點,較佳為丙烯酸系樹脂、丙烯醯胺系樹脂、丙烯酸/丙烯醯胺共聚物樹脂。From the viewpoint of heat resistance, among these various adhesives, polyhydroxystyrene resin, polyoxyalkylene resin, acrylic resin, acrylamide resin, acrylic acid/acrylamide copolymer resin are preferable. From the viewpoint of development control, an acrylic resin, an acrylamide resin, or an acrylic/acrylamide copolymer resin is preferable.

該丙烯酸系樹脂係由(甲基)丙烯酸苄酯、(甲基)丙烯酸、(甲基)丙烯酸羥乙酯、(甲基)丙烯醯胺等所選出之單體而成的共聚物,例如,較佳為如甲基丙烯酸苄酯/甲基丙烯酸、甲基丙烯酸苄酯/苄基甲基丙烯醯胺之各共聚物、KS阻劑-106(日本大阪有機化學工業(股)製)、Cyclomer P系列(Daisel化學工業(股)製)等。The acrylic resin is a copolymer of a selected monomer such as benzyl (meth)acrylate, (meth)acrylic acid, hydroxyethyl (meth)acrylate or (meth)acrylamide, for example, Preferred are copolymers such as benzyl methacrylate/methacrylic acid, benzyl methacrylate/benzylmethacrylamide, KS Resistor-106 (manufactured by Osaka Organic Chemical Industry Co., Ltd.), Cyclomer P series (Daisel Chemical Industry Co., Ltd.) and so on.

藉由使該著色劑高濃度分散於此等黏著劑中,能夠賦與和下層等之密合性,此等黏著劑也有助於旋轉塗布、狹縫塗布時之塗布面狀。By dispersing the coloring agent at a high concentration in the adhesive or the like, adhesion to the lower layer or the like can be imparted, and these adhesives also contribute to the coating surface shape at the time of spin coating or slit coating.

~硬化劑~~ hardener ~

熱硬化性化合物使用環氧樹脂之情形,較佳為添加硬化劑。由於環氧樹脂之硬化劑的種類極多,性質、樹脂與硬化劑之混合物的可使用時間、黏度、硬化溫度、硬化時間、散熱等係根據所使用之硬化劑種類而差異極大,不得不根據硬化膜之使用目的、使用條件、作業條件等而選擇適當之硬化劑。關於該硬化劑,於垣內弘編之「環氧樹脂(日本昇晃堂)」第5章已被詳細解說。若列舉該硬化觸之例子時,成為如下所示:In the case where an epoxy resin is used as the thermosetting compound, a hardener is preferably added. Since the type of hardener of epoxy resin is extremely large, the properties, the time of use of the mixture of the resin and the hardener, the viscosity, the hardening temperature, the hardening time, the heat dissipation, etc. vary greatly depending on the type of hardener used, and have to be An appropriate curing agent is selected for the purpose of use of the cured film, the conditions of use, the working conditions, and the like. The hardener is explained in detail in Chapter 5 of "Epoxy Resin (Japan Shengshengtang)" edited by Yukihiro. When the example of the hardening touch is listed, it becomes as follows:

發揮觸媒性作用之物,可列舉:第三胺類、三氟化硼-胺錯合物;與環氧樹脂之官能基進行化學計量反應之物,可列舉:聚胺、酸酐等;另外,常溫硬化之例子可列舉:二乙三胺、聚醯胺樹脂;中溫硬化之例子可列舉:二乙胺基丙胺、三(二甲胺基甲基)酚;高溫硬化之例子,可列舉:鄰苯二甲酸酐、間苯二胺等。另外,若根據化學構造類別觀察時,於胺類中,脂肪族聚胺可列舉:二乙三胺;芳香族聚胺可列舉:間苯二胺;第三胺可列舉:三(二甲胺基甲基)酚;酸酐可列舉:鄰苯二甲酸酐、聚醯胺樹脂、聚硫化樹脂、三氟化硼-單乙胺錯合物;合成樹脂初期縮合物可列舉:酚樹脂、其他二氰二醯胺等。Examples of the catalytic action include a third amine and a boron trifluoride-amine complex; and a stoichiometric reaction with a functional group of the epoxy resin: a polyamine, an acid anhydride, etc.; Examples of the room temperature hardening include diethylenetriamine and polyamidamine resins; examples of the intermediate temperature hardening include diethylaminopropylamine and tris(dimethylaminomethyl)phenol; examples of high temperature hardening are exemplified. : phthalic anhydride, m-phenylenediamine, and the like. Further, when viewed according to the chemical structure type, examples of the aliphatic polyamine in the amines include diethylenetriamine; the aromatic polyamines may be m-phenylenediamine; and the third amines may be exemplified by tris(dimethylamine). Examples of the acid anhydride include phthalic anhydride, polyamine resin, polysulfide resin, and boron trifluoride-monoethylamine complex; and synthetic resin initial condensates include phenol resin and other two Cyanamide and the like.

此等硬化劑係藉由經加熱而與環氧基反應、加以聚合,交聯密度將提高而硬化之物。為了薄膜化,黏著劑、硬化劑皆較佳為極少量,尤其,相對於熱硬化性化合物,關於硬化劑,較佳為35質量%以下,更佳為30質量%以下,進一步更佳為25質量%以下。These hardeners are those which are reacted with an epoxy group by heating to be polymerized, and the crosslinking density is increased to be hardened. In order to reduce the thickness of the adhesive, the curing agent and the curing agent are preferably in a very small amount. In particular, the hardening agent is preferably 35 mass% or less, more preferably 30 mass% or less, and still more preferably 25 or less. Below mass%.

~硬化觸媒~~ Hardening catalyst ~

於本發明中,為了實現高的著色劑濃度,除了因與該硬化劑之反應所造成之硬化以外,主要係環氧基彼此間之反應所造成之硬化為有效的。因此,也能夠不使用硬化劑,而是使用硬化觸媒。相對於環氧當量約為150~200的環氧樹脂,該硬化觸媒之添加量,以質量為基準,利用約為1/10~1/1000,較佳約為1/20~1/500,進一步更佳約為1/30~1/250之微量予以硬化為可能的。In the present invention, in order to achieve a high concentration of the coloring agent, in addition to hardening due to the reaction with the curing agent, hardening by the reaction of the main epoxy groups with each other is effective. Therefore, it is also possible to use a hardening catalyst without using a hardener. The amount of the hardening catalyst added is about 1/10 to 1/1000, preferably about 1/20 to 1/500, based on the mass of the epoxy resin having an epoxy equivalent of about 150 to 200. Further, it is more preferably about 1/30 to 1/250 of a small amount to harden.

~溶劑~~ Solvent ~

本發明中之著色熱硬化性組成物能夠作成被各種溶劑所溶解的溶液而使用。可用於本發明中之著色熱硬化性組成物之各個溶劑,只要符合各成分之溶解性或著色硬化性組成物之塗布性的話,基本上並未予以特別限定。例如,可列舉:於形成金屬氧化物層之際所使用之上述有機溶劑。The colored thermosetting composition of the present invention can be used as a solution which is dissolved in various solvents. The respective solvents of the colored thermosetting composition which can be used in the present invention are not particularly limited as long as they satisfy the solubility of each component or the coatability of the coloring curable composition. For example, the above-mentioned organic solvent used at the time of forming a metal oxide layer is mentioned.

~分散劑~~Dispersant~

該分散劑能夠用以提高顏料之分散性而添加。該分散劑能夠適當選擇習知之分散劑而使用,例如,可列舉:陽離子系界面活性劑、氟系界面活性劑、高分子分散劑等。The dispersant can be added to increase the dispersibility of the pigment. The dispersant can be used by appropriately selecting a conventional dispersant, and examples thereof include a cationic surfactant, a fluorine-based surfactant, and a polymer dispersant.

此等分散劑可以使用多種化合物,例如,可列舉:酞菁衍生物(市售品EFKA-745(Efka公司製))、SOLSPERS 5000(日本Lubrizol公司製);有機矽氧烷聚合物KP341(日本信越化學工業(股)製)、(甲基)丙烯酸系(共)聚合物POLYFLOW No. 75、No. 90、No. 95(日本共榮社化學(股)製)、W001(日本裕商(股)製)等之陽離子系界面活性劑;聚環氧乙烷月桂基醚、聚環氧乙烷硬脂醯基醚、聚環氧乙烷油基醚、聚環氧乙烷辛基苯基醚、聚環氧乙烷壬基苯基醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯、山梨糖醇酐脂肪酸酯等之非離子系界面活性劑;W004、W005、W017(日本裕商(股)製)等之陰離子性界面活性劑;EFKA-46、EFKA-47、EFKA-47EA、EFKA聚合物-100、EFKA聚合物-400、EFKA聚合物-401、EFKA聚合物-450(以上日本森下產業(股)製)、DISPERSE AID 6、DISPERSE AID 8、DISPERSE AID 15、DISPERSE AID 9100(Sannopco(股)製)等之高分子分散劑;SOLSPERS 3000、5000、9000、12000、13240、13940、17000、24000、26000、28000等之各種SOLSPERS分散劑(日本Lubrizol公司製);ADEKA PLURONIC L31、F38、L42、L44、L61、L64、F68、L72、P95、F77、P84、F87、P94、L101、P103、F108、L121、P-123(日本旭電化(股)製)及ISONET S-20(日本三洋化成(股)製)。For the dispersing agent, a plurality of compounds can be used, and examples thereof include a phthalocyanine derivative (commercial product EFKA-745 (manufactured by Efka)), SOLSPERS 5000 (manufactured by Lubrizol Co., Ltd.), and an organic siloxane polymer KP341 (Japan). Shin-Etsu Chemical Co., Ltd., (meth)acrylic (co)polymer POLYFLOW No. 75, No. 90, No. 95 (Japan Kyoritsu Chemical Co., Ltd.), W001 (Japan Yushang ( Cationic surfactants, etc.; polyethylene oxide lauryl ether, polyethylene oxide stearyl ether, polyethylene oxide oleyl ether, polyethylene oxide octyl phenyl a nonionic surfactant such as ether, polyethylene oxide nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester; W004, Anionic surfactants such as W005 and W017 (made by Yusei Co., Ltd.); EFKA-46, EFKA-47, EFKA-47EA, EFKA polymer-100, EFKA polymer-400, EFKA polymer-401, Polymer dispersant such as EFKA Polymer-450 (above Japan Morishita Industrial Co., Ltd.), DISPERSE AID 6, DISPERSE AID 8, DISPERSE AID 15, DISPERSE AID 9100 (Sannopco) ; SOLSPERS 3000, 5000, 9000, 12000, 13240, 13940, 17000, 24000, 26000, 28000, etc., various SOLSPERS dispersants (made by Lubrizol, Japan); ADEKA PLURONIC L31, F38, L42, L44, L61, L64, F68, L72, P95, F77, P84, F87, P94, L101, P103, F108, L121, P-123 (made by Nippon Seiko Co., Ltd.) and ISONET S-20 (made by Japan Sanyo Chemical Co., Ltd.).

該分散劑可以單獨使用,也可以組合二種以上而使用。通常,相對於顏料100質量份,該分散劑之本發明中之著色熱硬化性組成物中的添加量較佳約為0.1~50質量份。These dispersing agents may be used singly or in combination of two or more. In general, the amount of the coloring thermosetting composition in the present invention of the dispersing agent is preferably from 0.1 to 50 parts by mass based on 100 parts by mass of the pigment.

~其他之添加劑~~Other additives~

於本發明中之非感光性之著色熱硬化性組成物中,必要時,能夠進一步添加各種添加劑。各種添加劑之具體例,例如,可列舉:上述特開2005-326453號中揭示之各種添加劑。In the non-photosensitive color thermosetting composition of the present invention, various additives can be further added as necessary. Specific examples of the various additives include, for example, various additives disclosed in the above-mentioned JP-A-2005-326453.

本發明中之著色層18,例如,能夠將上述之著色熱硬化性組成物塗布於載體12之金屬氧化物層16上,乾燥後形成。具體而言,例如,利用旋轉塗布、狹縫塗布、澆鑄塗布、輥塗布等之塗布方法以將含有溶劑之本發明中之著色熱硬化性組成物,塗布於載體12之金屬氧化物層16上而形成著色層18。In the coloring layer 18 of the present invention, for example, the colored thermosetting composition described above can be applied onto the metal oxide layer 16 of the carrier 12 and dried. Specifically, for example, a coloring thermosetting composition of the present invention containing a solvent is applied onto the metal oxide layer 16 of the carrier 12 by a coating method such as spin coating, slit coating, cast coating, or roll coating. The color layer 18 is formed.

基於發揮彩色瀘光片之功能與薄膜化之觀點,著色層18之厚度較佳為0.005μm~0.9μm,更佳為0.05μm~0.8μm,進一步更佳為0.1μm~0.7μm。The thickness of the colored layer 18 is preferably from 0.005 μm to 0.9 μm, more preferably from 0.05 μm to 0.8 μm, still more preferably from 0.1 μm to 0.7 μm, from the viewpoint of functioning as a color light-emitting sheet and thinning.

本發明中之著色層形成步驟較佳為更包含加熱步驟(也可以為後烘烤步驟)。具體而言,能夠於載體12上所設置之金屬氧化物層16上,塗布該著色熱硬化性組成物而形成塗布膜後,經由加熱步驟,使該塗布膜熱硬化而形成著色層18。該加熱步驟可以與塗布後之乾燥同時,另外,也可以於塗布乾燥後設置其他途徑之熱硬化步驟。該加熱步驟係使用烘箱、熱板等習知之加熱手段,較佳為130℃~300℃,進一步更佳為150℃~280℃,尤以170℃~260℃之條件下特別理想,較佳能夠於10秒鐘~3小時,進一步更佳於30秒鐘~2小時,尤以約60秒鐘~60分鐘之範圍下進行特別理想。但是,若考量生產性時,硬化所需要的時間越短越好。Preferably, the color layer forming step in the present invention further comprises a heating step (which may also be a post-baking step). Specifically, the colored thermosetting composition can be applied onto the metal oxide layer 16 provided on the carrier 12 to form a coating film, and then the coating film can be thermally cured to form the coloring layer 18 via a heating step. This heating step may be carried out simultaneously with the drying after coating, or may be provided with a thermal hardening step of another route after coating drying. The heating step is a conventional heating means such as an oven or a hot plate, preferably 130 ° C to 300 ° C, more preferably 150 ° C to 280 ° C, and particularly preferably 170 ° C to 260 ° C. It is more preferably from 30 seconds to 3 hours, more preferably from 30 seconds to 2 hours, and particularly preferably in the range of about 60 seconds to 60 minutes. However, when considering productivity, the time required for hardening is as short as possible.

[乾蝕刻步驟][dry etching step]

接著,藉由乾蝕刻以去除該著色層18之部分,而形成彩色瀘光片。具體而言,藉由將光阻層作為遮罩而實施乾蝕刻,著色層18所露出之部分將被去除,能夠將著色層18加工成所希望之形狀(例如,矩形)。Next, a portion of the colored layer 18 is removed by dry etching to form a colored calender. Specifically, dry etching is performed by using the photoresist layer as a mask, and the exposed portion of the colored layer 18 is removed, and the colored layer 18 can be processed into a desired shape (for example, a rectangular shape).

一光阻劑層之形成一Forming a photoresist layer

如上所述,將金屬氧化物層16及著色層18依序積層於載體12上之後,在著色層18上形成光阻劑層(感光性樹脂層)26。具體而言,藉由將正型或負型之感光性樹脂組成物塗布於該著色層18上,使其乾燥而形成光阻劑層26。於此光阻劑層26之形成中,進一步更佳為進行預烘烤處理。As described above, after the metal oxide layer 16 and the coloring layer 18 are sequentially laminated on the carrier 12, a photoresist layer (photosensitive resin layer) 26 is formed on the colored layer 18. Specifically, a positive or negative photosensitive resin composition is applied onto the colored layer 18 and dried to form a photoresist layer 26. In the formation of the photoresist layer 26, it is more preferable to perform a prebaking treatment.

該正型或負型之感光性樹脂組成物,例如,於本發明中,適合採用揭示於日本專利特開2007-11324號公報之段落編號0112~0117之事項。For the positive or negative photosensitive resin composition, for example, in the present invention, the items disclosed in paragraphs 0112 to 0117 of JP-A-2007-11324 are suitably employed.

該正型之感光性樹脂組成物能夠使用一種適合於對含有紫外線(g線、i線)、準分子/雷射等之遠紫外線、電子線、離子束及X線等之放射線感應的正型光阻劑用之正型阻劑組成物。該放射線之中,作為曝光該感光性樹脂組成物層之該放射線中,較佳為g線、i線,其中更佳為i線曝光。The positive photosensitive resin composition can be used in a positive type suitable for radiation sensing of ultraviolet rays, electron beams, ion beams, X-rays, and the like containing ultraviolet rays (g-line, i-line), excimer/laser, and the like. A positive resist composition for photoresists. Among the radiations, as the radiation for exposing the photosensitive resin composition layer, a g-line or an i-line is preferable, and among them, i-line exposure is more preferable.

該感光性樹脂組成物之塗布方法,能夠適合採用上述之塗布方法,亦即,旋轉塗布、狹縫塗布、澆鑄塗布、輥塗布等。另外,基於發揮作為乾蝕刻時之遮罩的功能、乾蝕刻後容易去除之觀點,該光阻劑層26之厚度較佳為0.01μm~3μm,更佳為0.1μm~2.5μm,進一步更佳為0.15μm~2μm。The coating method of the photosensitive resin composition can be suitably carried out by the above-described coating method, that is, spin coating, slit coating, cast coating, roll coating, or the like. Further, the thickness of the photoresist layer 26 is preferably from 0.01 μm to 3 μm, more preferably from 0.1 μm to 2.5 μm, further preferably from the viewpoint of functioning as a mask for dry etching and easy removal after dry etching. It is 0.15 μm to 2 μm.

-影像形成(圖案化)-- Image formation (patterning) -

藉由圖案模樣去除該光阻劑層26,於該著色層18上形成影像。於此,著色層18可以為由單一著色層所構成之層,也可以為由二種以上之著色層所構成之層。The photoresist layer 26 is removed by a pattern to form an image on the colored layer 18. Here, the colored layer 18 may be a layer composed of a single colored layer, or may be a layer composed of two or more colored layers.

例如,形成與金屬氧化物層16上既已形成的著色層(第1著色層)18不同的第2著色層20之情形下,於形成第2著色層20之區域中,使第1著色層18得以露出之方式來去除光阻劑層26之部分(第2A圖)。此情形下,能夠對應於所希望之圖案,例如,對應於金屬氧化物層16上形成第2著色層20的區域以圖案模樣曝光該光阻劑層26,利用顯像液加以顯像而形成蝕刻用遮罩(圖案影像)。For example, in the case where the second colored layer 20 different from the colored layer (first colored layer) 18 formed on the metal oxide layer 16 is formed, the first colored layer is formed in the region where the second colored layer 20 is formed. 18 is removed to remove portions of the photoresist layer 26 (Fig. 2A). In this case, it is possible to correspond to a desired pattern, for example, to expose the photoresist layer 26 in a pattern corresponding to the region where the second colored layer 20 is formed on the metal oxide layer 16, and develop it by developing with a developing liquid. A mask for etching (pattern image).

該光阻劑層26之曝光能夠隔著既定(圖案模樣)之光罩圖案,藉由利用g線、h線、i線等、較佳為i線,以對正型或負型之感光性樹脂組成物實施曝光而進行。The exposure of the photoresist layer 26 can be positive or negative by using a gutter pattern of a predetermined (pattern pattern) by using a g-line, an h-line, an i-line, or the like, preferably an i-line. The resin composition is exposed to light.

該顯像液係不會對含有著色劑之著色層18造成影響,只要為溶解正型光阻劑之曝光部及負型光阻劑之未硬化部之顯像液的話,能夠使用任一種顯像液。具體而言,能夠使用各種有機溶劑之組合或鹼性水溶液。The developing solution does not affect the coloring layer 18 containing the coloring agent, and any type of display can be used as long as it dissolves the exposure portion of the positive photoresist and the uncured portion of the negative photoresist. Like liquid. Specifically, a combination of various organic solvents or an aqueous alkaline solution can be used.

經由如此之影像形成步驟,如第2A圖所示,使得第1著色層18之表面(與金屬氧化物層16連接之側的相反側表面)的部分得以露出於該圖案模樣上。另外,第1著色層18之中,在金屬氧化物層16上形成第2著色層20之區域以外的部分成為被光阻劑層26所被覆的狀態。Through such an image forming step, as shown in FIG. 2A, a portion of the surface of the first colored layer 18 (the surface opposite to the side to which the metal oxide layer 16 is joined) is exposed on the pattern. In the first colored layer 18, a portion other than the region where the second colored layer 20 is formed on the metal oxide layer 16 is in a state of being covered by the photoresist layer 26.

藉由將此光阻劑層26作為光罩使用,在金屬氧化物層16上形成第2著色層20,除了根據第1著色層18所構成的像素,能夠進一步形成另一種像素。成為光罩材之光阻劑層26係可能微細化,並且,由於具有矩形性,能夠微細且矩形地形成利用本發明之製法所製造之彩色濾光片的各像素。By using the photoresist layer 26 as a photomask, the second colored layer 20 is formed on the metal oxide layer 16, and another pixel can be formed in addition to the pixel formed by the first colored layer 18. The photoresist layer 26 to be a photomask may be made finer, and since it has a rectangular shape, each pixel of the color filter manufactured by the method of the present invention can be formed finely and rectangularly.

-乾蝕刻-- dry etching -

接著,藉由使用氟系氣體之乾蝕刻法以去除該第1著色層18之露出部分,使金屬氧化物層16得以露出對應於形成第2著色層20之區域的圖案模樣上(第2B圖)。亦即,形成於金屬氧化物層16上的著色層18之中,未被光阻劑層26所覆蓋之區域係經由乾蝕刻而予以去除,僅對應於形成第2著色層20之區域的位置成為金屬氧化物層16露出之狀態。此時,介於載體12與著色層18之間的金屬氧化物層16將擔負自動停止蝕刻之功能,有效抑制載體12之削減。Next, the exposed portion of the first colored layer 18 is removed by dry etching using a fluorine-based gas, and the metal oxide layer 16 is exposed to a pattern corresponding to the region where the second colored layer 20 is formed (Fig. 2B) ). That is, among the coloring layer 18 formed on the metal oxide layer 16, the region not covered by the photoresist layer 26 is removed by dry etching, and corresponds only to the position of the region where the second colored layer 20 is formed. The metal oxide layer 16 is exposed. At this time, the metal oxide layer 16 interposed between the carrier 12 and the coloring layer 18 is responsible for automatically stopping the etching, and the reduction of the carrier 12 is effectively suppressed.

為了形成彩色濾光片之矩形形狀,尋求異方向性蝕刻,尤其可使用氟系氣體。雖然該氟系氣體能夠使用習知之氟系氣體,但是,較佳為下式(I)所示之氟系化合物的氣體:In order to form a rectangular shape of a color filter, an anisotropic etching is sought, and in particular, a fluorine-based gas can be used. Although the fluorine-based gas can be a conventional fluorine-based gas, a gas of a fluorine-based compound represented by the following formula (I) is preferred:

Cn Hm Fl  式(I)C n H m F l (I)

[式中,n係表示1~6、m係表示0~13、1係表示1~14。][In the formula, n represents 1 to 6, m represents 0 to 13, and 1 represents 1 to 14. ]

該式(I)所示之氟系氣體,例如,可列舉:由CF4 、C2 F6 、C3 F3 、C2 F4 、C4 F8 、C4 F6 、C5 F8 、CHF3 之群組而成的至少一種。本發明中之氟系氣體能夠由該群組之中選擇一種氣體而使用,另外也能夠組合二種以上之氣體而使用。Examples of the fluorine-based gas represented by the formula (I) include CF 4 , C 2 F 6 , C 3 F 3 , C 2 F 4 , C 4 F 8 , C 4 F 6 , and C 5 F 8 . At least one of the group of CHF 3 is formed. The fluorine-based gas in the present invention can be used by selecting one type of gas from the group, or can be used by combining two or more kinds of gases.

基於維持被蝕刻部分之矩形性之觀點,本發明中之氟系氣體較佳為由CF4 、C2 F6 、C4 F8 及CHF3 之群組所選出之至少一種,更佳為CF4 及/或C2 F6 ,尤以CF4 特別理想。The fluorine-based gas in the present invention is preferably at least one selected from the group consisting of CF 4 , C 2 F 6 , C 4 F 8 and CHF 3 , more preferably CF, from the viewpoint of maintaining the squareness of the portion to be etched. 4 and / or C 2 F 6 , especially CF 4 is particularly desirable.

該金屬氧化物層16之氟系氣體的蝕刻速率通常為1~10nm/min。The etching rate of the fluorine-based gas of the metal oxide layer 16 is usually from 1 to 10 nm/min.

使用氟系氣體之乾蝕刻條件能夠採用例如以下之條件:The dry etching conditions using a fluorine-based gas can employ, for example, the following conditions:

氣體:CF4 流量100~300sccmGas: CF 4 flow rate 100~300sccm

O2 流量10~100sccmO 2 flow 10~100sccm

輸出:300~600WOutput: 300 ~ 600W

壓力:1~4PaPressure: 1 ~ 4Pa

乾蝕刻裝置(日本日立High Technologies(股)製)藉由混合該氟系氣體與氧氣,能夠使自由基反應加速、提高蝕刻速率。以流量比表示氟系氣體與氧氣之含有比率(氟系氣體/氧氣)較佳設為2/1~8/1。藉由設為該範圍內,能夠防止朝向蝕刻處理時之光阻劑層側壁的蝕刻生成物之附著,另外,於後述之光阻劑層去除步驟中,光阻劑層26之剝離將變得容易。其中,基於維持被蝕刻部分的矩形性的同時,也防止朝向蝕刻生成物光阻劑側壁之再附著之觀點,氟系氣體與氧氣之含有比率較佳為2/1~6/1,尤以3/1~5/1特別理想。The dry etching apparatus (manufactured by Hitachi High Technologies Co., Ltd.) can accelerate the radical reaction and increase the etching rate by mixing the fluorine-based gas and oxygen. The ratio of the fluorine-based gas to the oxygen (fluorine-based gas/oxygen) is preferably 2/1 to 8/1 in terms of the flow ratio. By setting it as this range, it is possible to prevent the adhesion of the etching product to the side wall of the photoresist layer during the etching process, and the peeling of the photoresist layer 26 in the photoresist layer removing step to be described later becomes easily. Among them, the ratio of the fluorine-based gas to the oxygen gas is preferably from 2/1 to 6/1, in view of maintaining the squareness of the portion to be etched and also preventing re-adhesion toward the side surface of the photoresist of the etching product. 3/1 to 5/1 is especially ideal.

基於維持蝕刻電漿的分壓控制安定性及被蝕刻形狀的垂直性之觀點,除了該氟系氣體及氧氣之外,該氟系氣體與氧氣之混合氣體較佳為進一步含有其他氣體,係至少由氦(He)、氖(Ne)、氬(Ar)、氪(Kr)、氙(Xe)等之稀有氣體、氯原子、氟原子、溴原子的鹵素原子之鹵素系氣體(例如,CCl4 、CClF3 、AlF3 、AlCl3 等)、N2 、CO、及CO2 之群組所選出之至少一種,更佳為含有由Ar、He、Kr、N2 及Xe之群組所選出之至少一種,進一步更佳為含有由He、Ar及Xe之群組所選出之至少一種。From the viewpoint of maintaining the partial pressure of the etching plasma to control the stability and the perpendicularity of the shape to be etched, in addition to the fluorine-based gas and oxygen, the mixed gas of the fluorine-based gas and the oxygen preferably further contains other gases, at least a halogen-based gas of a rare gas such as helium (He), neon (Ne), argon (Ar), krypton (Kr) or xenon (Xe), a chlorine atom, a fluorine atom or a halogen atom of a bromine atom (for example, CCl 4 At least one selected from the group consisting of CClF 3 , AlF 3 , AlCl 3 , etc., N 2 , CO, and CO 2 , more preferably selected from the group consisting of Ar, He, Kr, N 2 and Xe At least one, further preferably, contains at least one selected from the group consisting of He, Ar, and Xe.

但是,維持蝕刻電漿的分壓控制安定性及被蝕刻形狀的垂直性為可能之情形,也可以使用僅含有氟系氣體與氧氣之混合氣體。However, it is possible to maintain the partial pressure control stability of the etching plasma and the perpendicularity of the shape to be etched, and a mixed gas containing only a fluorine-based gas and oxygen may be used.

除了該氟系氣體與氧氣之外,可含有之氣體的含量係將氧氣設為1之時的流量比較佳為25以下,更佳為10以上、20以下,尤以14以上、18以下特別理想。In addition to the fluorine-based gas and the oxygen gas, the content of the gas which can be contained is preferably 25 or less, more preferably 10 or more and 20 or less, and particularly preferably 14 or more and 18 or less. .

於本發明中之蝕刻步驟,較佳為利用下列手法以事先求出蝕刻處理時間:In the etching step in the present invention, it is preferred to use the following method to determine the etching processing time in advance:

1)算出蝕刻步驟中之蝕刻速率(nm/min.)。1) Calculate the etching rate (nm/min.) in the etching step.

2)根據上述所算出的蝕刻速率,利用蝕刻步驟以算出蝕刻所希望之厚度需求的處理時間。2) The etching time is used to calculate the processing time required for etching the desired thickness by the etching rate calculated as described above.

該蝕刻速率能夠藉由採取蝕刻時間與殘膜之關係而算出。另外,也可以經由終點檢測而管控乾蝕刻處理時間。This etching rate can be calculated by taking the relationship between the etching time and the residual film. In addition, the dry etching processing time can also be controlled via the end point detection.

本發明中之蝕刻處理時間較佳於10分鐘以內進行蝕刻處理,更佳於7分鐘以內進行處理。還有,由於金屬氧化物層16發揮停止蝕刻之功能,為了去除著色層18之露出部分,可以稍微超過進行如上述方式所算出之蝕刻處理時間而進行乾蝕刻,也能夠防止載體12之損壞。The etching treatment time in the present invention is preferably performed by etching within 10 minutes, more preferably within 7 minutes. Further, since the metal oxide layer 16 functions to stop the etching, in order to remove the exposed portion of the colored layer 18, dry etching can be performed slightly more than the etching treatment time calculated as described above, and damage of the carrier 12 can be prevented.

本發明中之蝕刻步驟係腔之內部壓力較佳為2.0~6.0Pa,更佳為4.0~5.0Pa。藉由腔之內部壓力為該範圍,能夠使圖案之矩形性成為良好,抑制蝕刻所生成的副產物附著於光阻劑層26。The internal pressure of the etching step chamber in the present invention is preferably from 2.0 to 6.0 Pa, more preferably from 4.0 to 5.0 Pa. When the internal pressure of the cavity is within this range, the rectangularity of the pattern can be improved, and by-products generated by etching can be prevented from adhering to the photoresist layer 26.

例如,腔之內部壓力能夠藉由適當控制蝕刻氣體之流量與腔之減壓度加以調整。For example, the internal pressure of the chamber can be adjusted by appropriately controlling the flow rate of the etching gas and the degree of pressure reduction of the chamber.

於本發明中之蝕刻步驟中,該載體12之溫度較佳為30℃以上、100℃以下。藉此,能夠進一步控制朝向蝕刻處理時之光阻劑層側壁之蝕刻副產物的附著,能夠使後述之光阻劑層去除步驟中之光阻劑層26的剝離變得容易。其中,尤其基於維持被蝕刻部分之矩形性、與抑制蝕刻副產物朝向光阻劑層側壁之再附著之觀點,該載體溫度更佳為30℃~80℃,尤以40℃~60℃特別理想。In the etching step in the present invention, the temperature of the carrier 12 is preferably 30 ° C or more and 100 ° C or less. Thereby, it is possible to further control the adhesion of the etching by-products toward the side wall of the photoresist layer during the etching process, and it is possible to facilitate the peeling of the photoresist layer 26 in the photoresist layer removing step to be described later. Among them, the carrier temperature is preferably from 30 ° C to 80 ° C, especially from 40 ° C to 60 ° C, especially from the viewpoint of maintaining the squareness of the portion to be etched and suppressing the reattachment of the etching by-product toward the sidewall of the photoresist layer. .

於蝕刻步驟中,例如,藉由將晶圓平台之溫度控制於30℃以上、100℃以下,能夠使該載體12之溫度成為30℃以上、100℃以下。In the etching step, for example, by controlling the temperature of the wafer stage to 30° C. or higher and 100° C. or lower, the temperature of the carrier 12 can be 30° C. or higher and 100° C. or lower.

蝕刻步驟中之乾蝕刻條件係根據著色層之材質或層厚等而有所不同,以下,針對上述條件以外之較佳條件加以說明:The dry etching conditions in the etching step differ depending on the material of the colored layer, the layer thickness, and the like. Hereinafter, preferred conditions other than the above conditions will be described:

1)氣體流量較佳為1500mL/min(0℃、1013hPa)以下,更佳為500~1000mL/min(0℃、1013hPa)。1) The gas flow rate is preferably 1500 mL/min (0 ° C, 1013 hPa) or less, more preferably 500 to 1000 mL/min (0 ° C, 1013 hPa).

2)高頻係可以由400kHz、60MHz、13.56MHz、2.45GHz等加以選擇,能夠利用50~2000W,較佳為100~1000W之RF功率加以處理2) The high frequency system can be selected from 400 kHz, 60 MHz, 13.56 MHz, 2.45 GHz, etc., and can be processed with an RF power of 50 to 2000 W, preferably 100 to 1000 W.

3)源極功率(RF)與偏壓之關係,RF功率/天線偏壓/基板偏壓(晶圓偏壓)較佳分別為600~1000W/300~500W/150~250W,更佳為700~900W/350~450W/200W。3) The relationship between source power (RF) and bias voltage, RF power / antenna bias / substrate bias (wafer bias) are preferably 600 ~ 1000W / 300 ~ 500W / 150 ~ 250W, more preferably 700 ~900W/350~450W/200W.

本發明中之蝕刻步驟較佳為含有過度蝕刻處理步驟。藉由進行過度蝕刻處理步驟,於直接維持圖案矩形性的狀態下,能夠有效去除蝕刻殘渣,並且,根據金屬氧化物層16之存在,能夠更有效抑制載體12之損壞的發生。The etching step in the present invention preferably includes an overetching treatment step. By performing the over-etching treatment step, the etching residue can be effectively removed in a state where the pattern rectangularity is directly maintained, and the occurrence of damage of the carrier 12 can be more effectively suppressed according to the presence of the metal oxide layer 16.

該過度蝕刻處理係與該蝕刻步驟相同,能夠使用氟系氣體與氧氣之混合氣體。This overetching treatment is the same as the etching step, and a mixed gas of a fluorine-based gas and oxygen can be used.

該過度蝕刻處理較佳為設定過度蝕刻時間。雖然過度蝕刻時間能夠任意設定,基於光阻劑之蝕刻承受性與被蝕刻圖案矩形性維持之觀點,較佳為去除著色層18之乾蝕刻處理之合計處理時間的30%以下,更佳為5~25%,尤以15~20%特別理想。The overetching process preferably sets the overetching time. Although the over-etching time can be arbitrarily set, it is preferable to remove 30% or less of the total processing time of the dry etching treatment of the colored layer 18 from the viewpoint of maintaining the etching resistance of the photoresist and the rectangularity of the etched pattern, and more preferably 5 ~ 25%, especially 15 to 20% is particularly desirable.

-光阻劑層之去除-- removal of the photoresist layer -

乾蝕刻後,經由專用之剝離液或溶劑以去除所殘存的光阻劑層26。After dry etching, the remaining photoresist layer 26 is removed via a dedicated stripper or solvent.

光阻劑層26之去除較佳為包含:在光阻劑層26上賦與剝離液或溶劑而成為可能去除光阻劑層26之狀態的步驟;及使用洗淨水以去除該光阻劑層26的步驟。The removal of the photoresist layer 26 preferably includes a step of imparting a stripping liquid or a solvent on the photoresist layer 26 to make it possible to remove the photoresist layer 26; and using a washing water to remove the photoresist. The step of layer 26.

在光阻劑層26上賦與剝離液或溶劑而成為可能去除的步驟,例如,可列舉:將剝離液或溶劑至少賦與至光阻劑層26上,予以停滯既定時間之水坑式顯像步驟。使剝離液或溶劑予以停滯的時間,並未予以特別限制,較佳為從數十秒鐘至數分鐘。The step of removing the liquid or solvent from the photoresist layer 26 is possible, and for example, a blistering method in which at least a stripping solution or a solvent is applied to the photoresist layer 26 and stagnated for a predetermined period of time is exemplified. Like steps. The time for stopping the stripping solution or the solvent is not particularly limited, and is preferably from several tens of seconds to several minutes.

另外,使用洗淨水以去除光阻劑層26的步驟,例如,可列舉:從噴霧式或噴淋式噴射噴嘴,對光阻劑層26噴射洗淨水以去除光阻劑層26的步驟。Further, the step of using the washing water to remove the photoresist layer 26 may, for example, be a step of spraying the washing water onto the photoresist layer 26 from the spray type or spray nozzle to remove the photoresist layer 26. .

洗淨水較佳能夠使用純水。The washing water is preferably capable of using pure water.

另外,噴射噴嘴可列舉:於其噴射範圍內,包含整個載體之噴射噴嘴;或一種可動式之噴射噴嘴,其可動範圍包含整個載體之噴射噴嘴。噴射噴嘴為可動式之情形,藉由在去除光阻劑層26之步驟中,從載體中央部至載體端部為止,移動二次以上而噴射洗淨水,能夠更有效去除光阻劑層26。Further, the injection nozzle may be exemplified by an injection nozzle including the entire carrier within its injection range, or a movable injection nozzle whose movable range includes the injection nozzle of the entire carrier. In the case where the ejection nozzle is movable, the photoresist layer 26 can be more efficiently removed by moving the cleaning water twice or more from the center portion of the carrier to the end portion of the carrier in the step of removing the photoresist layer 26. .

該剝離液一般含有有機溶劑,也可以更含有無機溶劑。例如,有機溶劑可列舉:1)烴系化合物、2)鹵化烴系化合物、3)醇系化合物、4)醚或乙縮醛系化合物、5)酮或醛系化合物、6)酯系化合物、7)多元醇系化合物、8)羧酸或其酸酐系化合物、9)酚系化合物、10)含氮化合物、11)含硫化合物、12)含氟化合物。The stripping liquid generally contains an organic solvent, and may further contain an inorganic solvent. Examples of the organic solvent include 1) a hydrocarbon-based compound, 2) a halogenated hydrocarbon-based compound, 3) an alcohol-based compound, 4) an ether or an acetal-based compound, 5) a ketone or an aldehyde-based compound, and 6) an ester-based compound. 7) a polyol compound, 8) a carboxylic acid or an anhydride thereof, 9) a phenol compound, 10) a nitrogen-containing compound, 11) a sulfur-containing compound, and 12) a fluorine-containing compound.

於本發明中之剝離液較佳為含有含氮化合物,更佳為含有非環狀含氮化合物與環狀含氮化合物。The stripping liquid in the present invention preferably contains a nitrogen-containing compound, and more preferably contains an acyclic nitrogen-containing compound and a cyclic nitrogen-containing compound.

非環狀含氮化合物較佳為具有羥基的非環狀含氮化合物。具體而言,例如,可列舉:一異丙醇胺、二異丙醇胺、三異丙醇胺、N-乙基乙醇胺、N,N-二丁基乙醇胺、N-丁基乙醇胺、一乙醇胺、二乙醇胺、三乙醇胺等,較佳為一乙醇胺、二乙醇胺、三乙醇胺,更佳為一乙醇胺(H2 NCH2 CH2 OH)。The acyclic nitrogen-containing compound is preferably an acyclic nitrogen-containing compound having a hydroxyl group. Specifically, for example, monoisopropanolamine, diisopropanolamine, triisopropanolamine, N-ethylethanolamine, N,N-dibutylethanolamine, N-butylethanolamine, monoethanolamine can be mentioned. And diethanolamine, triethanolamine, etc., preferably monoethanolamine, diethanolamine, triethanolamine, more preferably monoethanolamine (H 2 NCH 2 CH 2 OH).

環狀含氮化合物可列舉:異喹啉、咪唑、N-乙基嗎啉、ε-己內醯胺、喹啉、1,3-二甲基-2-咪唑啶酮、α-甲基吡啶、β-甲基吡啶、γ-甲基吡啶、2-甲基哌啶、3-甲基哌啶、4-甲基哌啶、哌、哌啶、吡啶、吡咯烷、N-甲基-2-吡咯烷酮、N-苯基嗎啉、2,4-二甲基吡啶、2,6-二甲基吡啶等;較佳為N-甲基-2-吡咯烷酮、N-乙基嗎啉;更佳為N-甲基-2-吡咯烷酮(NMP)。Examples of the cyclic nitrogen-containing compound include isoquinoline, imidazole, N-ethylmorpholine, ε-caprolactam, quinoline, 1,3-dimethyl-2-imidazolidinone, and α-methylpyridine. , β-methylpyridine, γ-methylpyridine, 2-methylpiperidine, 3-methylpiperidine, 4-methylpiperidine, piperidine , piperidine, pyridine, pyrrolidine, N-methyl-2-pyrrolidone, N-phenylmorpholine, 2,4-dimethylpyridine, 2,6-lutidine, etc.; preferably N-A Further, 2-pyrrolidone, N-ethylmorpholine; more preferably N-methyl-2-pyrrolidone (NMP).

本發明中之剝離液較佳為含有非環狀含氮化合物與環狀含氮化合物,其中,更佳為含有:非環狀含氮化合物係由一乙醇胺、二乙醇胺、三乙醇胺所選出之至少一種;環狀含氮化合物係由N-甲基-2-吡咯烷酮、N-乙基嗎啉所選出之至少一種;進一步更佳為含有一乙醇胺與N-甲基-2-吡咯烷酮。The stripping liquid in the present invention preferably contains an acyclic nitrogen-containing compound and a cyclic nitrogen-containing compound, and more preferably, the acyclic nitrogen-containing compound is selected from at least one of ethanolamine, diethanolamine and triethanolamine. A cyclic nitrogen-containing compound is at least one selected from the group consisting of N-methyl-2-pyrrolidone and N-ethylmorpholine; further preferably, it contains monoethanolamine and N-methyl-2-pyrrolidone.

相對於剝離液100質量份,期望該非環狀含氮化合物之含量為9質量份以上、11質量份以下;環狀含氮化合物之含量為65質量份以上、70質量份以下。The content of the acyclic nitrogen-containing compound is preferably 9 parts by mass or more and 11 parts by mass or less based on 100 parts by mass of the peeling liquid, and the content of the cyclic nitrogen-containing compound is 65 parts by mass or more and 70 parts by mass or less.

另外,本發明中之剝離液較佳為利用純水以稀釋非環狀含氮化合物與環狀含氮化合物的混合物之剝離液。Further, the stripping liquid in the present invention is preferably a stripping solution in which pure water is used to dilute a mixture of the acyclic nitrogen-containing compound and the cyclic nitrogen-containing compound.

於本發明中之光阻劑層去除步驟中,最好去除在著色層18上所形成的光阻劑層26,即使為在著色層18之側壁附著有蝕刻生成物的沈積物之情形,該沈積物也可以不完全予以去除。於此,所謂沈積物係表示蝕刻生成物附著、堆積於著色層18側壁之物。In the photoresist removing step in the present invention, it is preferable to remove the photoresist layer 26 formed on the colored layer 18 even in the case where deposits of etching products are adhered to the sidewalls of the colored layer 18, Deposits may also not be completely removed. Here, the deposit means that the etching product adheres to and deposits on the side wall of the colored layer 18.

-其他著色層之形成-- formation of other colored layers -

於本發明之彩色濾光片之製法中,光阻劑層26之去除後,進行如上述之方式,在載體12上形成有著色層18、與金屬氧化物層16露出於圖案模樣上的部分。接著,於此金屬氧化物層16之露出部分,如第2C圖所示,藉由形成與金屬氧化物層16上既已形成之著色層18不同的著色層20,例如,能夠製造具備2色著色層18、20之彩色濾光片28。例如,藉由使用為了形成著色層20之著色硬化性組成物,利用相同於形成著色層18的方法,賦與整面而予以硬化後,實施乾蝕刻、研磨等而使著色層18再度露出。藉此,使2色著色層18、20得以交替呈現於基板12之面內的方式來予以形成。In the method of manufacturing the color filter of the present invention, after the photoresist layer 26 is removed, a portion in which the colored layer 18 and the metal oxide layer 16 are exposed on the pattern is formed on the carrier 12 as described above. . Next, as shown in FIG. 2C, the exposed portion of the metal oxide layer 16 is formed by forming a coloring layer 20 different from the coloring layer 18 formed on the metal oxide layer 16, for example, capable of producing two colors. The color filters 28 of the colored layers 18, 20. For example, by using the colored curable composition for forming the colored layer 20, the entire surface is cured by the same method as the formation of the colored layer 18, and then dry etching, polishing, or the like is performed to expose the colored layer 18 again. Thereby, the two coloring layers 18 and 20 are alternately formed in the plane of the substrate 12.

再者,利用不同的圖案模樣,從該光阻劑層形成步驟起直到光阻劑層去除步驟為止,依照此順序進行,接著,藉由在金屬氧化物層16所露出的部分形成新的著色層,例如,也能夠製造3色彩色濾光片。Furthermore, the different pattern patterns are used, from the photoresist layer forming step to the photoresist layer removing step, in this order, and then, a new color is formed by the exposed portion of the metal oxide layer 16. Layers, for example, can also produce 3-color color filters.

-平坦化層及微透鏡之形成-- formation of planarization layer and microlens -

於製造如第1圖所示之固體攝像裝置10之情形下,以既定之圖案化彩色瀘光片之後,利用習知方法以在彩色瀘光片之著色層18、20上形成平坦化層22,進一步於其上形成微透鏡24。還有,平坦化層22能夠使用丙烯酸系、環氧系、聚醯亞胺系等之透明樹脂,利用旋轉塗布以形成。另外,微透鏡24能夠使用丙烯酸樹脂、酚樹脂等,經由旋轉塗布及再流動處理而形成。藉此,能夠製作如第1圖所示之構造的固體攝像裝置10。In the case of manufacturing the solid-state imaging device 10 as shown in FIG. 1, after the color light-emitting sheet is patterned, the planarization layer 22 is formed on the coloring layers 18, 20 of the color light-emitting sheet by a conventional method. Further, a microlens 24 is formed thereon. Further, the planarizing layer 22 can be formed by spin coating using a transparent resin such as an acrylic, epoxy or polyimide. Further, the microlens 24 can be formed by spin coating and reflow treatment using an acrylic resin, a phenol resin or the like. Thereby, the solid-state imaging device 10 having the structure shown in Fig. 1 can be produced.

若根據如上述之方法,能夠提供一種彩色瀘光片28及具備它之固體攝像裝置10。該彩色瀘光片的基底之削減將被抑制,並且膜厚均勻性為高的矩形,再者,顏色再現性佳。According to the method as described above, it is possible to provide a color calender sheet 28 and a solid-state imaging device 10 having the same. The reduction of the base of the color calender sheet is suppressed, and the film thickness uniformity is high, and the color reproducibility is good.

【實施例】[Examples]

以下,針對本發明之實施例及比較例加以說明,但是,本發明並不受此等實施例所限定。Hereinafter, the examples and comparative examples of the present invention will be described, but the present invention is not limited by the examples.

<實施例1><Example 1>

-金屬氧化物層形成步驟-- Metal oxide layer formation step -

使用旋轉塗布機(日本東京電子公司製、Mark8),將氧化鈦先驅物聚合物(Rasa工業公司製、商品名:TI-44)溶解於醋酸丁酯中,調製形成固形成分5%之溶液2ml而滴下至矽晶圓上,以旋轉數2000rpm塗布,於200℃,實施10分鐘後烘烤,以形成膜厚0.1μm之金屬氧化物層。A titanium oxide precursor polymer (manufactured by Rasa Industries Co., Ltd., trade name: TI-44) was dissolved in butyl acetate using a spin coater (manufactured by Tokyo Dentsu Co., Ltd., Mark 8) to prepare a solution of 5% solid solution. The film was dropped onto a silicon wafer, coated at a number of revolutions of 2000 rpm, and baked at 200 ° C for 10 minutes to form a metal oxide layer having a film thickness of 0.1 μm.

-著色層形成步驟-- Colored layer forming step -

準備含顏料之熱硬化性組成物(著色熱硬化性組成物)「SG-5000L」(日本富士軟片電子材料公司製),利用旋轉塗布機(日本東京電子公司製、Mark8),以使膜厚成為0.8μm塗布膜之方式來塗布於該金屬氧化物層上。接著,使用熱板,於220℃進行5分鐘之加熱,使塗布膜硬化而形成著色層。經由該含有顏料之熱硬化性組成物所形成的著色層之膜厚為0.6μm。The SG-5000L (manufactured by Fujifilm Electronic Materials Co., Ltd.) was used to prepare a thermosetting composition (coloring thermosetting composition) containing a pigment, and a film thickness was obtained by a spin coater (manufactured by Tokyo Electronics Co., Ltd., Mark 8). It was applied to the metal oxide layer as a coating film of 0.8 μm. Next, heating was performed at 220 ° C for 5 minutes using a hot plate to cure the coating film to form a colored layer. The thickness of the coloring layer formed through the pigment-containing thermosetting composition was 0.6 μm.

-光阻劑層形成步驟-- photoresist layer forming step -

接著,於使用該SG-5000L所形成的著色層上,利用旋轉塗布機(日本東京電子公司製、Mark8)以塗布正型光阻劑「FHi622BC」(日本富士軟片電子材料公司製),於100℃進行2分鐘之加熱處理,成為膜厚0.8μm之方式來形成光阻劑層。Then, a positive photoresist (FHi622BC) (manufactured by Fujifilm Electronic Materials Co., Ltd.) was applied to a coloring layer formed by using the SG-5000L by a spin coater (manufactured by Tokyo Electronics Co., Ltd., Mark 8). The photoresist layer was formed by heat treatment at ° C for 2 minutes to a thickness of 0.8 μm.

-影像形成(圖案化)步驟-- Image formation (patterning) steps -

使用i線步進機(Canon公司製、FPA3000i5+),進行對應於RED濾鏡陣列之區域的250mJ/cm2 之圖案曝光,於110℃實施1分鐘之加熱處理後,利用顯像液「FHD-5」(日本富士軟片電子材料公司製)以進行1分鐘之顯像處理。之後,於120℃實施2分鐘之後烘烤處理以去除應形成RED濾鏡陣列之區域的光阻劑層,形成1.5μm×1.5μm尺寸之海島圖案。Using an i-line stepper (manufactured by Canon Inc., FPA3000i5+), pattern exposure of 250 mJ/cm 2 corresponding to the area of the RED filter array was performed, and after heat treatment at 110 ° C for 1 minute, the developing liquid "FHD- 5" (made by Fujifilm Electronic Materials Co., Ltd.) to perform development processing for 1 minute. Thereafter, a baking treatment was performed at 120 ° C for 2 minutes to remove the photoresist layer of the region where the RED filter array should be formed, and a sea-island pattern of a size of 1.5 μm × 1.5 μm was formed.

-乾蝕刻步驟-- dry etching step -

接著,利用乾蝕刻裝置(日本日立High Technologies公司製、U621),RF功率:800W、天線偏壓:400W、晶圓偏壓:200W、腔之內部壓力:4.0Pa、基板溫度:50℃、將混合氣體之氣體來源及流量設為CF4 :200mL/min、Oo2 :50mL/min、Ar:800mL/min,以實施117秒鐘之蝕刻處理。進一步過度蝕刻處理係於利用該蝕刻條件以進行總蝕刻時間20%之23秒鐘的蝕刻處理。Next, using a dry etching apparatus (U621, manufactured by Hitachi High Technologies, Japan), RF power: 800 W, antenna bias: 400 W, wafer bias: 200 W, internal pressure of the cavity: 4.0 Pa, substrate temperature: 50 ° C, The gas source and flow rate of the mixed gas were set to CF 4 : 200 mL/min, Oo 2 : 50 mL/min, and Ar: 800 mL/min to carry out an etching treatment for 117 seconds. Further over-etching treatment is performed by etching treatment using this etching condition for a total etching time of 20% for 23 seconds.

-光阻劑層去除步驟-- photoresist layer removal step -

接著,使用光阻劑剝離液「MS-230C」(日本富士軟片電子材料公司製)以實施120秒鐘之剝離處理,進行光阻劑之去除。Next, a photoresist stripping liquid "MS-230C" (manufactured by Fujifilm Electronic Materials Co., Ltd.) was used to carry out a peeling treatment for 120 seconds to remove the photoresist.

進行如上方式,形成彩色濾光片圖案,製作單色之彩色濾光片。In the above manner, a color filter pattern is formed to produce a monochrome color filter.

<實施例2><Example 2>

於實施例1之金屬氧化物層形成步驟中,使用旋轉塗布機(日本東京電子公司製、Mark8),將高純度化學研究所公司製之氧化鈦先驅物聚合物(商品名:SYM-Ti05)溶解於醋酸丁酯中,再將固形成分4%之溶液2ml滴下至矽晶圓上,以旋轉數1700rpm塗布,於200℃,實施10分鐘後烘烤而形成膜厚0.1μm之金屬氧化物層。In the metal oxide layer forming step of the first embodiment, a titanium oxide precursor polymer (trade name: SYM-Ti05) manufactured by High Purity Chemical Research Co., Ltd. was used using a spin coater (manufactured by Tokyo Electronics Co., Ltd., Mark 8). Dissolved in butyl acetate, and then dropped 2 ml of a solution having a solid content of 4% onto a silicon wafer, coated at a number of revolutions of 1,700 rpm, and baked at 200 ° C for 10 minutes to form a metal oxide layer having a film thickness of 0.1 μm. .

其他步驟之條件係進行相同於實施例1之方式,形成單色之彩色濾光片。The conditions of the other steps were carried out in the same manner as in Example 1 to form a monochromatic color filter.

金屬氧化物層:含有氧化鈦。Metal oxide layer: contains titanium oxide.

蝕刻條件Etching conditions

乾蝕刻裝置(日本日立High Technologies公司製、U621)。Dry etching device (manufactured by Hitachi High Technologies, U621, Japan).

RF功率:800W、天線偏壓:400W、晶圓偏壓:200W、腔之內部壓力:4.0Pa、基板溫度:50℃。RF power: 800 W, antenna bias: 400 W, wafer bias: 200 W, internal pressure of the cavity: 4.0 Pa, substrate temperature: 50 °C.

混合氣體之氣體來源及流量:Gas source and flow rate of mixed gas:

CF4 :200mL/min、O2 :50mL/min、Ar:800mL/min。CF 4 : 200 mL/min, O 2 : 50 mL/min, Ar: 800 mL/min.

<實施例3><Example 3>

於實施例1之金屬氧化物層形成步驟中,使用旋轉塗布機(日本東京電子公司製、Mark8),將高純度化學研究所公司製之氧化鈦先驅物聚合物(商品名:SYM-ZrO2 )之固形成分1.6%之溶液.2ml滴下至矽晶圓上,以旋轉數3500rpm塗布,於200℃,實施10分鐘後烘烤而形成膜厚0.1μm之金屬氧化物層。In the metal oxide layer forming step of the first embodiment, a titanium oxide precursor polymer (trade name: SYM-ZrO 2 ) manufactured by High Purity Chemical Research Co., Ltd. was used using a spin coater (manufactured by Tokyo Electronics Co., Ltd., Mark 8). The solid solution formed a 1.6% solution. 2 ml was dropped onto a ruthenium wafer, coated at a number of revolutions of 3,500 rpm, and baked at 200 ° C for 10 minutes to form a metal oxide layer having a film thickness of 0.1 μm.

其他步驟之條件係進行相同於實施例1之方式,形成單色之彩色濾光片。The conditions of the other steps were carried out in the same manner as in Example 1 to form a monochromatic color filter.

金屬氧化物層:含有氧化鋅。Metal oxide layer: contains zinc oxide.

蝕刻條件Etching conditions

乾蝕刻裝置(日本日立High Technologies公司製、U621)。Dry etching device (manufactured by Hitachi High Technologies, U621, Japan).

RF功率:800W、天線偏壓:400W、晶圓偏壓:200W、腔之內部壓力:4.0Pa、基板溫度:50℃。RF power: 800 W, antenna bias: 400 W, wafer bias: 200 W, internal pressure of the cavity: 4.0 Pa, substrate temperature: 50 °C.

混合氣體之氣體來源及流量:Gas source and flow rate of mixed gas:

CF4 :200mL/min、O2 :50mL/min、Ar:800mL/min。CF 4 : 200 mL/min, O 2 : 50 mL/min, Ar: 800 mL/min.

<實施例4><Example 4>

於實施例1之金屬氧化物層形成步驟中,使用旋轉塗布機(日本東京電子公司製、Mark8),將高純度化學研究所公司製之氧化鋯先驅物聚合物(商品名:SYM-ZN20)之固形成分2.2%之溶液2ml滴下至矽晶圓上,以旋轉數3000rpm塗布,於200℃,實施10分鐘後烘烤而形成膜厚0.1μm之金屬氧化物層。In the metal oxide layer forming step of the first embodiment, a zirconia precursor polymer (trade name: SYM-ZN20) manufactured by High Purity Chemical Research Co., Ltd. was used using a spin coater (manufactured by Tokyo Electronics Co., Ltd., Mark 8). 2 ml of a solution having a solid content of 2.2% was dropped onto a ruthenium wafer, coated at a number of revolutions of 3000 rpm, and baked at 200 ° C for 10 minutes to form a metal oxide layer having a film thickness of 0.1 μm.

其他步驟之條件係進行相同於實施例1之方式,形成單色之彩色濾光片。The conditions of the other steps were carried out in the same manner as in Example 1 to form a monochromatic color filter.

金屬氧化物層:含有氧化鋯。Metal oxide layer: contains zirconia.

蝕刻條件Etching conditions

乾蝕刻裝置(日本日立High Technologies公司製、U621)。Dry etching device (manufactured by Hitachi High Technologies, U621, Japan).

RF功率:800W、天線偏壓:400W、晶圓偏壓:200W、腔之內部壓力:4.0Pa、基板溫度:50℃。RF power: 800 W, antenna bias: 400 W, wafer bias: 200 W, internal pressure of the cavity: 4.0 Pa, substrate temperature: 50 °C.

混合氣體之氣體來源及流量:Gas source and flow rate of mixed gas:

CF4 :200mL/min、O2 :50mL/min、Ar:800mL/min。CF 4 : 200 mL/min, O 2 : 50 mL/min, Ar: 800 mL/min.

<實施例5><Example 5>

於該實施例1之金屬氧化物層形成步驟中,使用旋轉塗布機(日本東京電子公司製、Mark8),將醋酸丁酯添加於高純度化學研究所公司製之氧化鉭先驅物聚合物(商品名:SYM-TA05)之固形成分10.6%之溶液調整成固形成分5%,2ml滴下至矽晶圓上,以旋轉數2000rpm塗布,於200℃,實施10分鐘後烘烤而形成膜厚0.1μm之金屬氧化物層。In the metal oxide layer forming step of the first embodiment, butyl acetate was added to a cerium oxide precursor polymer manufactured by High Purity Chemical Research Co., Ltd. using a spin coater (manufactured by Tokyo Electronics Co., Ltd., Mark 8). Name: SYM-TA05) The solid content of 10.6% of the solution was adjusted to 5% of the solid content, 2 ml was dropped onto the wafer, coated at 2000 rpm, and baked at 200 ° C for 10 minutes to form a film thickness of 0.1 μm. a metal oxide layer.

其他步驟之條件係進行相同於實施例1之方式,形成單色之彩色濾光片。The conditions of the other steps were carried out in the same manner as in Example 1 to form a monochromatic color filter.

金屬氧化物層(基底層):含有氧化鉭。Metal oxide layer (base layer): contains cerium oxide.

蝕刻條件Etching conditions

乾蝕刻裝置(日本日立High Technologies公司製、U621)。Dry etching device (manufactured by Hitachi High Technologies, U621, Japan).

RF功率:800W、天線偏壓:400W、晶圓偏壓:200W、腔之內部壓力:4.0Pa、基板溫度:50℃。RF power: 800 W, antenna bias: 400 W, wafer bias: 200 W, internal pressure of the cavity: 4.0 Pa, substrate temperature: 50 °C.

混合氣體之氣體來源及流量:Gas source and flow rate of mixed gas:

CF4 :200mL/min、O2 :50mL/min、Ar:800mL/min。CF 4 : 200 mL/min, O 2 : 50 mL/min, Ar: 800 mL/min.

<比較例1><Comparative Example 1>

於實施例1之金屬氧化物層形成步驟中,使用旋轉塗布機(日本東京電子公司製、Mark8),將Rasa工業公司製之甲基矽氧烷系SOG(商品名:T-11),於矽晶圓上,以旋轉數2000rpm塗布,於200℃,實施10分鐘後烘烤而形成膜厚0.1μm之SiO2 層。In the metal oxide layer forming step of the first embodiment, a methyl oxa oxide-based SOG (trade name: T-11) manufactured by Rasa Industries Co., Ltd. was used by using a spin coater (manufactured by Tokyo Electronics Co., Ltd., Mark 8). The ruthenium wafer was coated at a number of revolutions of 2000 rpm, and baked at 200 ° C for 10 minutes to form an SiO 2 layer having a film thickness of 0.1 μm.

其他步驟之條件係進行相同於實施例1之方式,形成單色之彩色濾光片。The conditions of the other steps were carried out in the same manner as in Example 1 to form a monochromatic color filter.

金屬氧化物層:SiO2 層。Metal oxide layer: SiO 2 layer.

蝕刻條件Etching conditions

乾蝕刻裝置(日本日立High Technologies公司製、U621)。Dry etching device (manufactured by Hitachi High Technologies, U621, Japan).

RF功率:800W、天線偏壓:400W、晶圓偏壓:200W、腔之內部壓力:4.0Pa、基板溫度:50℃。RF power: 800 W, antenna bias: 400 W, wafer bias: 200 W, internal pressure of the cavity: 4.0 Pa, substrate temperature: 50 °C.

混合氣體之氣體來源及流量:Gas source and flow rate of mixed gas:

CF4 :200mL/min、O2 :50mL/min、Ar:800mL/min。CF 4 : 200 mL/min, O 2 : 50 mL/min, Ar: 800 mL/min.

-評估-- Evaluation -

針對實施例1~5及比較例1所製作之彩色濾光片,評估基底(金屬氧化物層)之削減,著色層之密合性及剝離液之承受性(耐溶劑性)。With respect to the color filters produced in Examples 1 to 5 and Comparative Example 1, the reduction of the base (metal oxide layer), the adhesion of the colored layer, and the acceptability of the peeling liquid (solvent resistance) were evaluated.

<基底之削減><base reduction>

針對實施例1~5及比較例1所製作之彩色瀘光片,藉由利用顯微鏡所得的著色層表面觀察(倍率100倍)、利用掃描型電子顯微鏡(SEM)所得的著色層表面及蝕刻區域表面觀察(倍率3萬倍)加以評估。將評估結果顯示於表1。With respect to the color calender sheets produced in Examples 1 to 5 and Comparative Example 1, the surface of the coloring layer and the etching region obtained by a scanning electron microscope (SEM) were observed by the surface of the coloring layer obtained by a microscope (magnification: 100 times). Surface observation (magnification 30,000 times) was evaluated. The evaluation results are shown in Table 1.

~評估基準~~ Evaluation criteria ~

○:基底削減並未觀察到。○: Base reduction was not observed.

△:雖然觀察到些微削減,但是實用上能夠容許的範圍。△: Although slight reduction was observed, it was practically acceptable.

×:觀察到基底之削減,超過實用範圍。×: The reduction of the base was observed, which exceeded the practical range.

<密合性><adhesion>

針對實施例1~5及比較例1所製作之彩色瀘光片,藉由利用顯微鏡所得的著色層之表面觀察(倍率100倍)、棋盤格子膠帶剝離試驗加以評估。評估係依照下列之基準而進行。將評估結果顯示於表1。The color calender sheets produced in Examples 1 to 5 and Comparative Example 1 were evaluated by surface observation (magnification: 100 times) of a coloring layer obtained by a microscope, and a checkerboard tape peeling test. The evaluation is based on the following benchmarks. The evaluation results are shown in Table 1.

~評估基準~~ Evaluation criteria ~

○:密合性良好。○: The adhesion was good.

△:雖然觀察到些微剝離,但是實用上能夠容許的範圍。△: Although some slight peeling was observed, it was practically acceptable.

×:觀察到剝離,超過實用範圍。×: Peeling was observed, which exceeded the practical range.

<光阻劑層去除之剝離液的承受性(耐溶劑性)><Resistance (resistance of solvent) of the stripper removed by the photoresist layer>

針對實施例1~5及比較例1所製作之彩色濾光片,藉由利用顯微鏡所得的著色層之表面觀察(倍率100倍)、利用觸針式膜厚計所得的膜減量加以評估。剝離液係使用光阻劑剝離液「MS-230C」。評估係依照下列之基準而進行。將評估結果顯示於表1。The color filters produced in Examples 1 to 5 and Comparative Example 1 were evaluated by the surface loss of the coloring layer obtained by the microscope (magnification: 100 times) and the film loss by a stylus film thickness meter. The stripping solution was a photoresist stripping solution "MS-230C". The evaluation is based on the following benchmarks. The evaluation results are shown in Table 1.

~評估基準~~ Evaluation criteria ~

○:不溶於溶劑。○: Insoluble in a solvent.

△:雖然觀察到些微溶解,但是實用上能夠容許的範圍。△: Although some slight dissolution was observed, it was practically acceptable.

×:溶於溶劑、膜減少,超過實用範圍。X: dissolved in a solvent, the film was reduced, and exceeded the practical range.

由顯示於表1之結果,實施例1~5及比較例1係著色層之密合性及耐溶劑性為實用容許範圍以上,於比較例1中,觀察到基底之削減,對於超過量用範圍,於實施例1~5中,基底之削減並未被觀察到。As a result of the results shown in Table 1, the adhesion and solvent resistance of the colored layers of Examples 1 to 5 and Comparative Example 1 were within the practically acceptable range. In Comparative Example 1, the reduction of the substrate was observed, and for the excess amount, In the examples, in Examples 1 to 5, the reduction of the substrate was not observed.

10...固體攝像裝置10. . . Solid state camera

12...載體12. . . Carrier

14...發光二極體14. . . Light-emitting diode

16...金屬氧化物層16. . . Metal oxide layer

18...著色層18. . . Colored layer

20...著色層20. . . Colored layer

22...平坦化層twenty two. . . Flattening layer

24...微透鏡twenty four. . . Microlens

26...光阻劑層26. . . Photoresist layer

28...彩色濾光片28. . . Color filter

30...習知之固體攝像裝置30. . . Conventional solid-state imaging device

32...高低差32. . . Height difference

第1圖係顯示具備有關本發明之彩色瀘光片之一固體攝像裝置構造例的概略圖。Fig. 1 is a schematic view showing an example of the structure of a solid-state imaging device including a color light-receiving sheet according to the present invention.

第2A圖係顯示製造有關本發明彩色瀘光片之步驟(圖案化後之狀態)的圖形。Fig. 2A is a view showing a step of manufacturing a color calender sheet of the present invention (a state after patterning).

第2B圖係顯示製造有關本發明彩色濾光片之步驟(乾蝕刻後之狀態)的圖形。Fig. 2B is a view showing a step of manufacturing a color filter of the present invention (a state after dry etching).

第2C圖係顯示製造有關本發明彩色瀘光片之步驟(形成第二色著色層之狀態)的圖形。Fig. 2C is a view showing a step of manufacturing a color calender sheet of the present invention (a state in which a second coloring layer is formed).

第3圖係顯示利用乾蝕刻法所製造之一習知固體攝像裝置例的概略圖。Fig. 3 is a schematic view showing an example of a conventional solid-state imaging device manufactured by dry etching.

第4A圖係顯示利用乾蝕刻法以製造彩色濾光片之習知步驟(圖案化後之狀態)的圖形。Fig. 4A is a view showing a conventional step (state after patterning) of a color filter by dry etching.

第4B圖係顯示利用乾蝕刻法以製造彩色濾光片之習知步驟(乾蝕刻後之狀態)的圖形。Fig. 4B is a view showing a conventional step (state after dry etching) for producing a color filter by dry etching.

第4C圖係顯示利用乾蝕刻法以製造彩色濾光片之習知步驟(形成第二色著色層之狀態)的圖形。Fig. 4C is a view showing a conventional step of producing a color filter by dry etching (a state in which a second colored layer is formed).

10...固體攝像裝置10. . . Solid state camera

12...載體12. . . Carrier

14...發光二極體14. . . Light-emitting diode

16...金屬氧化物層16. . . Metal oxide layer

18...著色層18. . . Colored layer

20...著色層20. . . Colored layer

22...平坦化層twenty two. . . Flattening layer

24...微透鏡twenty four. . . Microlens

Claims (12)

一種彩色濾光片,其特徵係在載體上設置有含有由Ti、Ta、Zn與Zr所選出之至少一種金屬的氧化物且為非晶質狀的金屬氧化物之層,隔著含有該非晶質狀的金屬氧化物之層而形成有著色層。 A color filter characterized in that a layer of a metal oxide containing an oxide of at least one metal selected from Ti, Ta, Zn and Zr and having an amorphous state is provided on a carrier, and the amorphous layer is contained A layer of a metal oxide is formed to form a colored layer. 如申請專利範圍第1項之彩色濾光片,其中含有該非晶質狀的金屬氧化物之層的厚度為0.2μm以下。 A color filter according to claim 1, wherein the layer containing the amorphous metal oxide has a thickness of 0.2 μm or less. 如申請專利範圍第1項之彩色濾光片,其中含有該非晶質狀的金屬氧化物之層為含有非晶質狀之TiO2 之層。A color filter according to claim 1, wherein the layer containing the amorphous metal oxide is a layer containing amorphous TiO 2 . 如申請專利範圍第2項之彩色濾光片,其中含有該非晶質狀的金屬氧化物之層為含有非晶質狀之TiO2 之層。A color filter according to claim 2, wherein the layer containing the amorphous metal oxide is a layer containing amorphous TiO 2 . 如申請專利範圍第1項之彩色濾光片,其中該著色層含有有機顏料。 A color filter according to claim 1, wherein the colored layer contains an organic pigment. 一種彩色濾光片之製法,其特徵係包含:在載體上形成含有由Ti、Ta、Zn與Zr所選出之至少一種金屬的氧化物且為非晶質狀的金屬氧化物之層的步驟;在含有該非晶質狀的金屬氧化物之層上形成著色層的步驟;及藉由乾蝕刻以去除該著色層之部分,而形成彩色濾光片之圖案的步驟。 A method of producing a color filter, comprising: forming a layer of a metal oxide containing an oxide of at least one metal selected from Ti, Ta, Zn, and Zr and being amorphous; a step of forming a colored layer on a layer containing the amorphous metal oxide; and a step of forming a pattern of a color filter by dry etching to remove a portion of the colored layer. 如申請專利範圍第6項之彩色濾光片之製法,其中使用含有由Ti、Ta、Zn與Zr所選出之至少一種金屬的金屬 醇鹽所得的先驅物聚合物與溶劑之組成物,利用溶膠凝膠法以形成含有該非晶質狀的金屬氧化物之層。 A method of producing a color filter according to item 6 of the patent application, wherein a metal containing at least one metal selected from Ti, Ta, Zn and Zr is used. The composition of the precursor polymer and the solvent obtained from the alkoxide is formed by a sol-gel method to form a layer containing the amorphous metal oxide. 如申請專利範圍第6項之彩色濾光片之製法,其中含有該非晶質狀的金屬氧化物之層為含有非晶質狀的TiO2 之層。A method of producing a color filter according to claim 6, wherein the layer containing the amorphous metal oxide is a layer containing amorphous TiO 2 . 一種固體攝像裝置,其特徵係具備如申請專利範圍第1項之彩色濾光片。 A solid-state imaging device characterized by having a color filter as in the first aspect of the patent application. 一種固體攝像裝置,其特徵係具備如申請專利範圍第2項之彩色濾光片。 A solid-state imaging device characterized by having a color filter as in the second aspect of the patent application. 一種固體攝像裝置,其特徵係具備如申請專利範圍第3項之彩色濾光片。 A solid-state imaging device characterized by having a color filter as in item 3 of the patent application. 一種固體攝像裝置,其特徵係具備如申請專利範圍第4項之彩色濾光片。 A solid-state imaging device characterized by having a color filter as in item 4 of the patent application.
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