TWI436465B - Wire bonding structure, method for bonding a wire and method for manufacturing a semiconductor package - Google Patents

Wire bonding structure, method for bonding a wire and method for manufacturing a semiconductor package Download PDF

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Publication number
TWI436465B
TWI436465B TW097142458A TW97142458A TWI436465B TW I436465 B TWI436465 B TW I436465B TW 097142458 A TW097142458 A TW 097142458A TW 97142458 A TW97142458 A TW 97142458A TW I436465 B TWI436465 B TW I436465B
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TW
Taiwan
Prior art keywords
wire
bonding
pad
intermediate material
copper
Prior art date
Application number
TW097142458A
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Chinese (zh)
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TW201003869A (en
Inventor
Hsiao Chuan Chang
Tsung Yueh Tsai
Yi Shao Lai
Ho Ming Tong
Jian Cheng Chen
Wei Chi Yih
Chang Ying Hung
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Advanced Semiconductor Eng
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Publication of TW201003869A publication Critical patent/TW201003869A/en
Application granted granted Critical
Publication of TWI436465B publication Critical patent/TWI436465B/en

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    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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Description

銲線接合結構、銲線接合方法及半導體封裝構造的製造方法Wire bonding structure, wire bonding method, and manufacturing method of semiconductor package structure

本發明係有關於一種銲線接合結構及方法，更特別有關於一種銲線接合方法，藉由一加熱裝置，使銅製銲線接合於晶片接墊。The present invention relates to a wire bonding structure and method, and more particularly to a wire bonding method in which a copper bonding wire is bonded to a wafer pad by a heating device.

參考第1圖，在半導體封裝構造製程中，銲線接合方法的技術廣泛地將銲線14應用於晶片10之接墊11與基板12之接墊13間的電性連接。打線接合製程是以金線為主，但銅線具有低成本的優勢。相較於金，銅具有較佳的導電性及導熱性，可使銅製銲線之線徑較細及散熱效率較佳。然而，銅具有延性不足及易氧化的缺點，使銅製銲線在應用上仍有所限制。Referring to FIG. 1, in the semiconductor package structure process, the wire bonding method widely applies the bonding wire 14 to the electrical connection between the pads 11 of the wafer 10 and the pads 13 of the substrate 12. The wire bonding process is mainly gold wire, but the copper wire has the advantage of low cost. Compared with gold, copper has better electrical conductivity and thermal conductivity, which makes the copper wire have a smaller wire diameter and better heat dissipation efficiency. However, copper has the disadvantages of insufficient ductility and easy oxidation, which makes the copper bonding wire still limited in application.

目前，銅製銲線只能應用在大尺寸之晶片接墊或低介電值材料(low-K)晶圓之晶片接墊，其原因在於銅製銲線接合製程之成功將取決於晶片接墊之結構強度。為了避免銅製銲線接合製程之失敗，小尺寸晶片接墊將被限制。At present, copper bonding wires can only be applied to wafer pads of large size wafer pads or low dielectric material (low-K) wafers because the success of the copper wire bonding process will depend on the wafer pads. Structural strength. In order to avoid the failure of the copper wire bonding process, small size wafer pads will be limited.

參考第2至4圖，其顯示習知銅製銲線接合方法。參考第2圖，藉由一打線機，提供一銅製銲線20，其包含一銅線22及一銅球24。該銅球24是利用放電的方法或氫焰燒結成球而連接於該銅線22之一端。參考第3圖，將該銅球24施壓而變形。參考第4圖，藉由一振動製程，將該銅球24接合於一鋁製接墊32。然而，在施壓製程時，由於銅之硬度較大，因此施壓時銅製銲線20所造成之力將可能損壞鋁製接墊32之結構。再者，先前技術之鋁製接墊32與銅製銲線20之間的介金屬化合物(intermetallic compound；IMC)所形成之數量不足，因此先前技術之銲線接合結構具有較小的鍵結力，進而只具有較低的可靠度。Referring to Figures 2 through 4, there is shown a conventional copper wire bonding method. Referring to Fig. 2, a copper bonding wire 20 comprising a copper wire 22 and a copper ball 24 is provided by a wire bonding machine. The copper ball 24 is connected to one end of the copper wire 22 by a discharge method or a hydrogen flame sintered ball. Referring to Fig. 3, the copper ball 24 is pressed and deformed. Referring to Fig. 4, the copper ball 24 is bonded to an aluminum pad 32 by a vibration process. However, during the pressing process, since the hardness of the copper is large, the force caused by the copper bonding wire 20 at the time of pressing may damage the structure of the aluminum pad 32. Furthermore, the amount of the intermetallic compound (IMC) formed between the prior art aluminum pad 32 and the copper bonding wire 20 is insufficient, so that the prior art wire bonding structure has a small bonding force. In turn, it has only low reliability.

參考第5圖，美國專利第6,329,722 B1號，標題為“用於積體電路之具有銅金屬化處理的接墊(Bonding Pads for Integrated Circuits Having Copper Interconnect Metallization)”，揭示一種裝置具有薄金屬塗層70(諸如錫)，其針對用於積體電路之具有銅金屬化處理的接墊60形成強大的鍵結。該薄金屬塗層70之表面氧化可被限制，且其氧化物可容易地被移除。再者，具有該薄金屬塗層70之接墊60可在低溫時形成介金屬，致使該接墊60可銲接與相容於銲線80。U.S. Patent No. 6,329,722 B1, entitled "Bonding Pads for Integrated Circuits Having Copper Interconnect Metallization", discloses a device having a thin metal coating. 70 (such as tin), which forms a strong bond for the pad 60 with copper metallization for the integrated circuit. The surface oxidation of the thin metal coating 70 can be limited and its oxide can be easily removed. Moreover, the pad 60 having the thin metal coating 70 can form a metal at a low temperature, so that the pad 60 can be soldered and compatible with the bonding wire 80.

然而，該專利仍藉由習知施壓及振動製程將該銲線80之球狀部接合於具有該薄金屬塗層70之接墊60，而非藉由一簡單加熱製程。However, this patent still bonds the ball portion of the bonding wire 80 to the pad 60 having the thin metal coating 70 by conventional pressure and vibration processes, rather than by a simple heating process.

因此，便有需要提供一種銲線接合結構及方法，能夠解決前述的問題。Therefore, there is a need to provide a wire bonding structure and method that can solve the aforementioned problems.

本發明提供一種銲線接合方法，包含下列步驟：將一中間材料覆蓋一鋁製接墊，並固定於該鋁製接墊上；以及藉由一加熱裝置，將一銅製銲線之一端與該中間材料加熱而熔融，藉此使該銅製銲線接合於該中間材料。The present invention provides a wire bonding method comprising the steps of: covering an intermediate material with an aluminum pad and fixing it to the aluminum pad; and attaching one end of the copper wire to the middle by a heating device The material is heated and melted, whereby the copper wire is bonded to the intermediate material.

根據本發明之銲線接合方法，在加熱製程時，由於該銅製銲線並無施壓於位於該鋁製接墊之中間材料，因此銅製銲線將不會損壞鋁製接墊之結構。再者，本發明之銲線接合結構的中間材料與銅製銲線之間以及中間材料與鋁製接墊之間皆具有較大的鍵結力，進而具有較高的可靠度。According to the wire bonding method of the present invention, in the heating process, since the copper bonding wire is not pressed against the intermediate material located in the aluminum pad, the copper bonding wire will not damage the structure of the aluminum pad. Furthermore, the intermediate material of the wire bonding structure of the present invention and the copper bonding wire and the intermediate material and the aluminum pad have a large bonding force, thereby having high reliability.

為了讓本發明之上述和其他目的、特徵、和優點能更明顯，下文將配合所附圖示，作詳細說明如下。The above and other objects, features, and advantages of the present invention will become more apparent from the accompanying drawings.

參考第6至17圖，其顯示本發明之第一實施例之半導體封裝構造的製造方法。參考第6圖，提供一晶圓100，其定義有複數個陣列式排列之晶片110。參考第7圖，其顯示該晶片之局部放大圖。每一晶片110包含一保護層112及至少一接墊(諸如鋁製接墊132)。該保護層112覆蓋該鋁製接墊132，並裸露出一部分之該鋁製接墊132，藉此該鋁製接墊132具有一外面積A1。參考第8圖，將一中間材料140覆蓋該鋁製接墊132，並固定於該鋁製接墊132上。該中間材料140之厚度介於約0.1與約2密爾(mil)之間。Referring to Figures 6 to 17, there is shown a method of fabricating a semiconductor package structure in accordance with a first embodiment of the present invention. Referring to Figure 6, a wafer 100 is defined which defines a plurality of arrays of wafers 110. Referring to Figure 7, a partial enlarged view of the wafer is shown. Each wafer 110 includes a protective layer 112 and at least one pad (such as aluminum pads 132). The protective layer 112 covers the aluminum pad 132 and exposes a portion of the aluminum pad 132, whereby the aluminum pad 132 has an outer area A1. Referring to FIG. 8, an intermediate material 140 is overlaid on the aluminum pad 132 and fixed to the aluminum pad 132. The intermediate material 140 has a thickness between about 0.1 and about 2 mils.

在本實施例中，可藉由一電鍍製程，將該中間材料140覆蓋該鋁製接墊132，並固定於該鋁製接墊132上。在另一實施例中，可藉由一濺鍍製程，將該中間材料140覆蓋該鋁製接墊132，並固定於該鋁製接墊132上。在又一實施例中，可藉由一印刷製程，將該中間材料140覆蓋該鋁製接墊132，並固定於該鋁製接墊132上。In this embodiment, the intermediate material 140 is covered by the aluminum pad 132 and fixed on the aluminum pad 132 by an electroplating process. In another embodiment, the intermediate material 140 is covered by the aluminum pad 132 and fixed to the aluminum pad 132 by a sputtering process. In another embodiment, the intermediate material 140 can be covered by the aluminum pad 132 and fixed to the aluminum pad 132 by a printing process.

由於該鋁製接墊132不須考慮氧化問題，因此該中間材料140不須覆蓋整個該鋁製接墊132所裸露之外面積A1。較佳地，該鋁製接墊132被該中間材料140所覆蓋之面積A2可小於該鋁製接墊132之99%外面積A1。同時，可節省該中間材料140之用量。再者，由於該中間材料140所覆蓋之面積A2必須有足夠大，才能用以銲接於一銲線，因此該鋁製接墊132被該中間材料140所覆蓋之面積A2可大於該鋁製接墊之30%外面積A1。Since the aluminum pad 132 does not need to consider the oxidation problem, the intermediate material 140 does not need to cover the entire area A1 of the aluminum pad 132 exposed. Preferably, the area A2 of the aluminum pad 132 covered by the intermediate material 140 may be less than the 99% outer area A1 of the aluminum pad 132. At the same time, the amount of the intermediate material 140 can be saved. Moreover, since the area A2 covered by the intermediate material 140 must be large enough to be soldered to a bonding wire, the area A2 of the aluminum pad 132 covered by the intermediate material 140 can be larger than the aluminum connection. 30% of the outer area of the pad A1.

參考第9圖，將該晶圓100切割成複數個晶片110，如此以形成具有鋁製接墊132及中間材料140的晶片110。參考第10圖，藉由諸如黏膠104將該晶片110固定於一載板106上。該載板106可為基板或導線架。Referring to FIG. 9, the wafer 100 is diced into a plurality of wafers 110 such that a wafer 110 having aluminum pads 132 and intermediate material 140 is formed. Referring to FIG. 10, the wafer 110 is fixed to a carrier 106 by, for example, an adhesive 104. The carrier 106 can be a substrate or a lead frame.

參考第11圖，藉由一打線機102，提供一銲線(諸如銅製銲線120)，其中該銅製銲線120僅由單一線狀部122所組成，且該線狀部122由一端124至另一端126之剖面面積大體上相同。參考第12圖，在本實施例中，可將該銅製銲線120之一端124接觸該中間材料140。參考第13圖，在另一實施例中，可將該銅製銲線120之一端124插入該中間材料140。Referring to FIG. 11, a wire bonding wire (such as a copper bonding wire 120) is provided by a wire bonding machine 102, wherein the copper bonding wire 120 is composed only of a single linear portion 122, and the linear portion 122 is provided from one end 124 to The cross-sectional area of the other end 126 is substantially the same. Referring to Fig. 12, in the present embodiment, one end 124 of the copper bonding wire 120 may be in contact with the intermediate material 140. Referring to Figure 13, in another embodiment, one end 124 of the copper bond wire 120 can be inserted into the intermediate material 140.

參考第14圖，藉由一加熱裝置108，將一銅製銲線120之一端124與該中間材料140之間的介面加熱而熔融，或者將該中間材料140加熱而熔融，藉此使一部分之線狀部122被該中間材料140所包覆，且該銅製銲線120接合於該中間材料140，如此以形成本發明之銲線接合結構，並完成本發明之銲線接合方法。舉例而言，該加熱裝置108可為雷射加熱裝置，將熱源集中於該銅製銲線120與該中間材料140之間的介面，可使該銅製銲線120之一端124與該中間材料140瞬間熔融。然後，該銅製銲線120之一端124與該中間材料140固化而結合(如第15圖所示，亦即第14圖之A部分之剖面)。或者，將熱源集中於該中間材料140，可使該中間材料140瞬間熔融。然後，該銅製銲線120之一端124與該中間材料140固化而結合(如第16圖所示，亦即第14圖之B部分之剖面)，其中該銅製銲線120之線狀部122仍可保持由一端124至另一端126之剖面面積大體上相同。Referring to Fig. 14, a dielectric device 108 heats and melts the interface between one end 124 of the copper bonding wire 120 and the intermediate material 140, or heats and melts the intermediate material 140, thereby forming a portion of the wire. The portion 122 is covered by the intermediate material 140, and the copper bonding wire 120 is bonded to the intermediate material 140, thus forming the wire bonding structure of the present invention, and the wire bonding method of the present invention is completed. For example, the heating device 108 can be a laser heating device, and the heat source is concentrated on the interface between the copper bonding wire 120 and the intermediate material 140, so that one end 124 of the copper bonding wire 120 and the intermediate material 140 can be instantaneous. Melt. Then, one end 124 of the copper bonding wire 120 is cured and bonded to the intermediate material 140 (as shown in Fig. 15, that is, the cross section of the portion A of Fig. 14). Alternatively, by concentrating the heat source on the intermediate material 140, the intermediate material 140 can be melted instantaneously. Then, one end 124 of the copper bonding wire 120 is cured and bonded to the intermediate material 140 (as shown in FIG. 16, that is, a section of the portion B of FIG. 14), wherein the linear portion 122 of the copper bonding wire 120 remains The cross-sectional area from one end 124 to the other end 126 can be maintained substantially the same.

參考第17圖，該中間材料140及鋁製接墊132可視為一晶片接墊150，且該銅製銲線120之一端124電性連接於該晶片接墊150，該銅製銲線120之另一端126可電性連接於該載板106之接墊107，如此以完成本發明之半導體封裝構造的製造方法。該晶片接墊電性連接於該晶片之線路(圖未示)。Referring to FIG. 17, the intermediate material 140 and the aluminum pad 132 can be regarded as a die pad 150, and one end 124 of the copper bonding wire 120 is electrically connected to the die pad 150, and the other end of the copper bonding wire 120 is 126 can be electrically connected to the pads 107 of the carrier 106, thus completing the method of fabricating the semiconductor package structure of the present invention. The die pad is electrically connected to the circuit of the chip (not shown).

在本實施例中，該中間材料140選自錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)及銀(Ag)所構成之群組。該中間材料140與銅製銲線120之間的介金屬化合物所形成之數量大於該鋁製接墊132與銅製銲線120之間的介金屬化合物所形成之數量，且該中間材料140與鋁製接墊132之間的介金屬化合物所形成之數量大於該鋁製接墊132與銅製銲線120之間的介金屬化合物所形成之數量。因此，該中間材料140與銅製銲線120之間的鍵結力大於該鋁製接墊132與銅製銲線120之間的鍵結力，且該中間材料140與鋁製接墊132之間的鍵結力大於該鋁製接墊132與銅製銲線120之間的鍵結力。In this embodiment, the intermediate material 140 is selected from the group consisting of tin (Sn), gold (Au), zinc (Zn), platinum (Pt), palladium (Pd), manganese (Mn), magnesium (Mg), and indium (In ), a group of 锗 (Ge) and silver (Ag). The amount of the intermetallic compound between the intermediate material 140 and the copper bonding wire 120 is greater than the amount of the intermetallic compound formed between the aluminum pad 132 and the copper bonding wire 120, and the intermediate material 140 is made of aluminum. The amount of the intermetallic compound formed between the pads 132 is greater than the amount of the intermetallic compound formed between the aluminum pads 132 and the copper bonding wires 120. Therefore, the bonding force between the intermediate material 140 and the copper bonding wire 120 is greater than the bonding force between the aluminum pad 132 and the copper bonding wire 120, and between the intermediate material 140 and the aluminum pad 132. The bonding force is greater than the bonding force between the aluminum pad 132 and the copper bonding wire 120.

在一替代實施例中，該中間材料140亦可選自鎳(Ni)、釩(V)、鋁(Al)、銅(Cu)、鈦(Ti)、錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)及銀(Ag)所構成之群組中的單一元素或一種以上的元素合金。較佳的組合可為：鎳鈀金(Ni/Pd/Au)之元素合金、鎳鈀(Ni/Pd)之元素合金、鋁鎳銅(Al/Ni/Cu)之元素合金、鈦鎳銅(Ti/Ni/Cu)之元素合金、鈦銅(Ti/Cu)之元素合金或銅錫(Cu/Sn)之元素合金。In an alternative embodiment, the intermediate material 140 may also be selected from the group consisting of nickel (Ni), vanadium (V), aluminum (Al), copper (Cu), titanium (Ti), tin (Sn), gold (Au), a single element or a group of zinc (Zn), platinum (Pt), palladium (Pd), manganese (Mn), magnesium (Mg), indium (In), germanium (Ge), and silver (Ag) The above elemental alloy. A preferred combination may be: an elemental alloy of nickel palladium gold (Ni/Pd/Au), an elemental alloy of nickel palladium (Ni/Pd), an elemental alloy of aluminum nickel copper (Al/Ni/Cu), titanium nickel copper ( Element alloy of Ti/Ni/Cu), elemental alloy of titanium copper (Ti/Cu) or elemental alloy of copper tin (Cu/Sn).

根據本發明之銲線接合方法，在加熱製程時，由於該銅製銲線並無施壓於位於該鋁製接墊之中間材料，因此該銅製銲線將不會損壞鋁製接墊之結構。再者，本發明之銲線接合結構的中間材料與銅製銲線之間以及中間材料與鋁製接墊之間皆具有較大的鍵結力，進而具有較高的可靠度。According to the wire bonding method of the present invention, in the heating process, since the copper bonding wire is not pressed against the intermediate material located in the aluminum pad, the copper bonding wire will not damage the structure of the aluminum pad. Furthermore, the intermediate material of the wire bonding structure of the present invention and the copper bonding wire and the intermediate material and the aluminum pad have a large bonding force, thereby having high reliability.

參考第18圖，其顯示本發明之第二實施例之半導體封裝構造製造方法之銲線接合方法。該第二實施例之半導體封裝構造製造方法大體上類似於該第一實施例之半導體封裝構造製造方法，相同元件標示相同的標號。兩者之不同處是在於第二實施例之半導體封裝構造製造方法之銲線接合方法包含下列步驟：先將該銅製銲線120之一端124接觸該中間材料140；然後藉由一加熱裝置，將該銅製銲線120之一端124加熱而熔融，藉此使該銅製銲線120接合於該中間材料140。或者，先藉由一加熱裝置，將一銅製銲線120之一端124加熱而熔融；然後將該銅製銲線120之一端124接觸該中間材料140，藉此使該銅製銲線120接合於該中間材料140。Referring to Fig. 18, there is shown a wire bonding method of a semiconductor package structure manufacturing method according to a second embodiment of the present invention. The semiconductor package construction manufacturing method of the second embodiment is substantially similar to the semiconductor package construction manufacturing method of the first embodiment, and the same elements are denoted by the same reference numerals. The difference between the two is that the wire bonding method of the semiconductor package construction manufacturing method of the second embodiment comprises the steps of: first contacting one end 124 of the copper bonding wire 120 with the intermediate material 140; and then using a heating device, One end 124 of the copper bonding wire 120 is heated and melted, whereby the copper bonding wire 120 is bonded to the intermediate material 140. Alternatively, one end 124 of a copper bonding wire 120 is heated and melted by a heating device; then one end 124 of the copper bonding wire 120 is contacted with the intermediate material 140, thereby bonding the copper bonding wire 120 to the middle. Material 140.

根據本發明之銲線接合方法，在加熱製程時，由於該銅製銲線亦無施壓於位於該鋁製接墊之中間材料，因此該銅製銲線將不會損壞鋁製接墊之結構。再者，本發明之銲線接合結構的中間材料與銅製銲線之間以及中間材料與鋁製接墊之間皆具有較大的鍵結力，進而具有較高的可靠度。According to the wire bonding method of the present invention, in the heating process, since the copper bonding wire is not pressed against the intermediate material located in the aluminum pad, the copper bonding wire will not damage the structure of the aluminum pad. Furthermore, the intermediate material of the wire bonding structure of the present invention and the copper bonding wire and the intermediate material and the aluminum pad have a large bonding force, thereby having high reliability.

參考第19圖，其顯示本發明之第三實施例之半導體封裝構造製造方法之銲線接合方法。該第三實施例之半導體封裝構造製造方法大體上類似於該第二實施例之半導體封裝構造製造方法，相同元件標示相同的標號。兩者之不同處是在於該第三實施例之半導體封裝構造製造方法並未包含將一中間材料140覆蓋該鋁製接墊132，並固定於該鋁製接墊132上之步驟。再者，該第三實施例之半導體封裝構造製造方法之銲線接合方法包含下列步驟：先將該銅製銲線之一端接觸該鋁製接墊132；然後藉由一加熱裝置，將該銲線之一端加熱而熔融，藉此使該銅製銲線接合於該鋁製接墊132。或者，先藉由一加熱裝置，將一銅製銲線之一端加熱而熔融；然後將該銅製銲線之一端接觸該鋁製接墊132，藉此使該銅製銲線接合於該鋁製接墊132。Referring to Fig. 19, there is shown a wire bonding method of a semiconductor package structure manufacturing method according to a third embodiment of the present invention. The semiconductor package construction manufacturing method of the third embodiment is substantially similar to the semiconductor package construction manufacturing method of the second embodiment, and the same elements are denoted by the same reference numerals. The difference between the two is that the semiconductor package structure manufacturing method of the third embodiment does not include the step of covering an aluminum pad 132 with an intermediate material 140 and fixing it to the aluminum pad 132. Furthermore, the wire bonding method of the semiconductor package structure manufacturing method of the third embodiment includes the steps of: first contacting one end of the copper bonding wire with the aluminum pad 132; and then bonding the bonding wire by a heating device One of the ends is heated and melted, whereby the copper bonding wire is bonded to the aluminum pad 132. Alternatively, one end of a copper wire is heated and melted by a heating device; then one end of the copper wire is brought into contact with the aluminum pad 132, thereby bonding the copper wire to the aluminum pad. 132.

根據本發明之銲線接合方法，在加熱製程時，由於該銅製銲線亦無施壓於位於該鋁製接墊，因此銅製銲線將不會損壞鋁製接墊之結構。According to the wire bonding method of the present invention, in the heating process, since the copper bonding wire is not pressed against the aluminum pad, the copper bonding wire will not damage the structure of the aluminum pad.

雖然本發明已以前述實施例揭示，然其並非用以限定本發明，任何本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與修改。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。The present invention has been disclosed in the foregoing embodiments, and is not intended to limit the present invention. Any of the ordinary skill in the art to which the invention pertains can be modified and modified without departing from the spirit and scope of the invention. . Therefore, the scope of the invention is defined by the scope of the appended claims.

10．．．晶片10. . . Wafer

11．．．接墊11. . . Pad

12．．．基板12. . . Substrate

13．．．接墊13. . . Pad

14．．．銲線14. . . Welding wire

20．．．銲線20. . . Welding wire

22．．．銅線twenty two. . . Copper wire

24．．．銅球twenty four. . . Copper ball

32．．．接墊32. . . Pad

60．．．接墊60. . . Pad

70．．．金屬塗層70. . . Metal coating

80．．．銲線80. . . Welding wire

100．．．晶圓100. . . Wafer

102．．．打線機102. . . Wire machine

104．．．黏膠104. . . Viscose

106．．．載板106. . . Carrier board

107．．．接墊107. . . Pad

108．．．加熱裝置108. . . heating equipment

110．．．晶片110. . . Wafer

112．．．保護層112. . . The protective layer

120．．．銲線120. . . Welding wire

122．．．線狀部122. . . Linear part

124．．．端124. . . end

126．．．端126. . . end

132．．．接墊132. . . Pad

140．．．中間材料140. . . Intermediate material

150．．．晶片接墊150. . . Wafer pad

A1．．．外面積A1. . . Outer area

A2．．．面積A2. . . area

A．．．部分A. . . section

B．．．部分B. . . section

C．．．部分C. . . section

D．．．部分D. . . section

第1圖為先前技術之銲線接合方法之剖面示意圖。Figure 1 is a schematic cross-sectional view of a prior art wire bonding method.

第2至4圖為先前技術之銅製銲線接合方法之剖面示意圖。2 to 4 are schematic cross-sectional views showing a prior art copper wire bonding method.

第5圖為先前技術之銲線接合結構之剖面示意圖。Figure 5 is a schematic cross-sectional view of a prior art wire bond structure.

第6至17圖為本發明之第一實施例之半導體封裝構造的製造方法之剖面示意圖。6 to 17 are schematic cross-sectional views showing a method of fabricating the semiconductor package structure according to the first embodiment of the present invention.

第18圖為本發明之第二實施例之半導體封裝構造的製造方法中之銲線接合方法之部分放大之剖面示意圖，其顯示第14圖之C部分之剖面。Fig. 18 is a partially enlarged cross-sectional view showing a wire bonding method in a method of manufacturing a semiconductor package structure according to a second embodiment of the present invention, showing a cross section of a portion C of Fig. 14.

第19圖為本發明之第三實施例之半導體封裝構造的製造方法中之銲線接合方法之部分放大之剖面示意圖，其顯示第14圖之D部分之剖面。Fig. 19 is a partially enlarged cross-sectional view showing a wire bonding method in a method of manufacturing a semiconductor package structure according to a third embodiment of the present invention, showing a cross section of a portion D of Fig. 14.

108．．．加熱裝置108. . . heating equipment

110．．．晶片110. . . Wafer

112．．．保護層112. . . The protective layer

124．．．端124. . . end

120．．．銲線120. . . Welding wire

122．．．線狀部122. . . Linear part

132．．．接墊132. . . Pad

140．．．中間材料140. . . Intermediate material

Claims (21)

一種銲線接合結構，包含：一鋁製接墊；一中間材料，覆蓋該鋁製接墊，並固定於該鋁製接墊上；以及一銅製銲線，接合於該中間材料，其中該銅製銲線僅由單一線狀部所組成，且一部分之線狀部被該中間材料所包覆；其中該中間材料與銅製銲線之間的鍵結力大於該鋁製接墊與銅製銲線之間的鍵結力，且該中間材料與鋁製接墊之間的鍵結力大於該鋁製接墊與銅製銲線之間的鍵結力。 A wire bonding structure comprising: an aluminum pad; an intermediate material covering the aluminum pad and fixed to the aluminum pad; and a copper bonding wire bonded to the intermediate material, wherein the copper bonding The wire is composed only of a single linear portion, and a part of the linear portion is covered by the intermediate material; wherein the bonding force between the intermediate material and the copper bonding wire is greater than between the aluminum pad and the copper bonding wire The bonding force between the intermediate material and the aluminum pad is greater than the bonding force between the aluminum pad and the copper bonding wire. 依申請專利範圍第1項之銲線接合結構，其中該中間材料及鋁製接墊組合成一晶片接墊。 According to the wire bonding structure of claim 1, wherein the intermediate material and the aluminum pad are combined into a wafer pad. 依申請專利範圍第1項之銲線接合結構，其中該中間材料選自鎳(Ni)、釩(V)、鈦(Ti)、錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)及銀(Ag)所構成之群組。 The wire bonding structure according to claim 1, wherein the intermediate material is selected from the group consisting of nickel (Ni), vanadium (V), titanium (Ti), tin (Sn), gold (Au), zinc (Zn), and platinum. A group consisting of (Pt), palladium (Pd), manganese (Mn), magnesium (Mg), indium (In), germanium (Ge), and silver (Ag). 依申請專利範圍第1項之銲線接合結構，其中該該中間材料選自鎳(Ni)、釩(V)、鋁(Al)、銅(Cu)、鈦(Ti)、錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)及銀(Ag)所構成 之群組中一種以上的元素合金。 The wire bonding structure according to claim 1, wherein the intermediate material is selected from the group consisting of nickel (Ni), vanadium (V), aluminum (Al), copper (Cu), titanium (Ti), tin (Sn), Gold (Au), zinc (Zn), platinum (Pt), palladium (Pd), manganese (Mn), magnesium (Mg), indium (In), germanium (Ge) and silver (Ag) More than one elemental alloy in the group. 依申請專利範圍第1項之銲線接合結構，其中該鋁製接墊被該中間材料所覆蓋之面積介於該鋁製接墊之99%與30%之間的外面積。 The wire bonding structure according to claim 1, wherein the aluminum pad is covered by the intermediate material to have an outer area of between 99% and 30% of the aluminum pad. 依申請專利範圍第1項之銲線接合結構，其中該線狀部由一端至另一端之剖面面積相同。 The wire bonding structure according to the first aspect of the patent application, wherein the linear portion has the same cross-sectional area from one end to the other end. 一種銲線接合方法，包含下列步驟：將一中間材料覆蓋一接墊，並固定於該接墊上；以及藉由一加熱裝置，將一銲線之一端與該中間材料之介面加熱而熔融，藉此使該銲線接合於該中間材料。 A wire bonding method comprising the steps of: covering an intermediate material with a pad and fixing the pad; and heating and melting one end of a bonding wire and the interface of the intermediate material by a heating device, This causes the wire to bond to the intermediate material. 依申請專利範圍第7項之銲線接合方法，另包含下列步驟：將該銲線之該端接觸該中間材料。 According to the wire bonding method of claim 7, the method further comprises the step of contacting the end of the bonding wire with the intermediate material. 依申請專利範圍第7項之銲線接合方法，另包含下列步驟：將該銲線之該端插入該中間材料。 According to the wire bonding method of claim 7, the method further comprises the step of inserting the end of the bonding wire into the intermediate material. 依申請專利範圍第7項之銲線接合方法，其中該加熱裝置為雷射加熱裝置。 A wire bonding method according to claim 7 of the patent application, wherein the heating device is a laser heating device. 一種銲線接合方法，包含下列步驟： 將一中間材料覆蓋一接墊，並固定於該接墊上；以及藉由一加熱裝置，將一銲線之一端加熱而熔融，藉此使該銲線接合於該中間材料。 A wire bonding method comprising the following steps: An intermediate material is covered on a pad and fixed on the pad; and one end of a bonding wire is heated and melted by a heating device, thereby bonding the bonding wire to the intermediate material. 依申請專利範圍第11項之銲線接合方法，另包含下列步驟：將該銲線之該端接觸該中間材料。 According to the wire bonding method of claim 11, the method further comprises the step of contacting the end of the bonding wire with the intermediate material. 依申請專利範圍第11項之銲線接合方法，其中該加熱裝置為雷射加熱裝置。 A wire bonding method according to claim 11, wherein the heating device is a laser heating device. 依申請專利範圍第11項之銲線接合方法，其中該銲線為一銅製銲線，且該接墊為一鋁製接墊。 The wire bonding method according to claim 11, wherein the bonding wire is a copper bonding wire, and the bonding pad is an aluminum bonding pad. 一種銲線接合方法，包含下列步驟：提供一接墊；以及藉由一加熱裝置，將一銲線之一端加熱而熔融，藉此使該銲線接合於該接墊。 A wire bonding method comprising the steps of: providing a pad; and heating and melting one end of a bonding wire by a heating device, thereby bonding the bonding wire to the pad. 依申請專利範圍第15項之銲線接合方法，另包含下列步驟：將該銲線之該端接觸該接墊。 According to the wire bonding method of claim 15, the method further comprises the step of contacting the end of the bonding wire with the pad. 依申請專利範圍第15項之銲線接合方法，其中該加熱裝置為雷射加熱裝置。 A wire bonding method according to claim 15 of the patent application, wherein the heating device is a laser heating device. 依申請專利範圍第15項之銲線接合方法，其中 該銲線為一銅製銲線，且該接墊為一鋁製接墊。 a wire bonding method according to item 15 of the patent application scope, wherein The bonding wire is a copper bonding wire, and the pad is an aluminum pad. 一種半導體封裝構造的製造方法，包含下列步驟：提供一晶圓，其定義有複數個陣列式排列之晶片，每一晶片包含至少一接墊；將一中間材料覆蓋該接墊，並固定於該接墊上；將該晶圓切割成複數個晶片；將該晶片固定於一載板上；以及藉由一加熱裝置，將一銲線、該中間材料或兩者之間的介面加熱而熔融，藉此使該銲線接合於該中間材料。 A method of fabricating a semiconductor package structure, comprising the steps of: providing a wafer defining a plurality of array-arranged wafers, each wafer comprising at least one pad; covering an interface with an intermediate material and fixing the same a pad; cutting the wafer into a plurality of wafers; fixing the wafer to a carrier; and heating, melting, or melting the interface between the bonding wire, the intermediate material, or both by a heating device This causes the wire to bond to the intermediate material. 依申請專利範圍第19項之半導體封裝構造的製造方法，其中該加熱裝置為雷射加熱裝置。 A method of fabricating a semiconductor package structure according to claim 19, wherein the heating device is a laser heating device. 依申請專利範圍第19項之半導體封裝構造的製造方法，其中該銲線為一銅製銲線，且該接墊為一鋁製接墊。The method of manufacturing a semiconductor package structure according to claim 19, wherein the bonding wire is a copper bonding wire, and the pad is an aluminum pad.
TW097142458A 2008-07-11 2008-11-04 Wire bonding structure, method for bonding a wire and method for manufacturing a semiconductor package TWI436465B (en)

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