TWI436438B - Method for fabricating capillary for bonding copper wire and capillary for bonding copper wire by thereof - Google Patents
Method for fabricating capillary for bonding copper wire and capillary for bonding copper wire by thereof Download PDFInfo
- Publication number
- TWI436438B TWI436438B TW099131370A TW99131370A TWI436438B TW I436438 B TWI436438 B TW I436438B TW 099131370 A TW099131370 A TW 099131370A TW 99131370 A TW99131370 A TW 99131370A TW I436438 B TWI436438 B TW I436438B
- Authority
- TW
- Taiwan
- Prior art keywords
- capillary
- stage
- copper wire
- wire bonding
- powder
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78309—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Powder Metallurgy (AREA)
Description
本發明係有關於一種銅線打線接合用毛細管之製造方法，及依據該方法所製造的銅線打線接合用毛細管。
The present invention relates to a method for producing a copper wire bonding capillary, and a copper wire bonding capillary produced by the method.
打線接合(wire bonding)工序是一種為了達成半導體晶片和外部之間的電性連接，使用金(Au)、鋁(Al)或銅(Cu)材質的金屬線，連接晶片之搭接襯墊(bonding Pad) 與導線架(Lead Frame)的內部引導工序。此時，利用金屬線將兩個金屬連接起來的治工具就是毛細管。The wire bonding process is a bonding wire for connecting a wafer by using a metal wire made of gold (Au), aluminum (Al) or copper (Cu) in order to achieve electrical connection between the semiconductor wafer and the outside ( Bonding Pad) Internal guiding process with Lead Frame. At this time, the tool for connecting the two metals with a metal wire is a capillary.
一般來說，最常用的金屬線原料為黏著力高並且軟質的金(Au)。然而最近由於金價飆漲，所以半導體製造相關業者在打線接合工序上開始以銅(Cu)來取代傳統的金(Au)。In general, the most commonly used metal wire materials are high adhesion and soft gold (Au). Recently, however, due to the soaring price of gold, semiconductor manufacturing companies have begun to replace traditional gold (Au) with copper (Cu) in the wire bonding process.
但由於銅線的硬度比金線高，所以毛細管較容易受到磨損，導致壽命變短。除此之外，由於銅的融點較高，所以很容易受到熱衝擊而遭破壞。另外，相較於金線，銅線的黏著力較低，因此半導體製造工程上很容易引起金屬線短路而造成製造出不良品的情形。However, since the hardness of the copper wire is higher than that of the gold wire, the capillary is more susceptible to wear, resulting in a shorter life. In addition, since copper has a high melting point, it is easily damaged by thermal shock. In addition, compared with the gold wire, the adhesion of the copper wire is low, so that the semiconductor manufacturing process is likely to cause a short circuit of the metal wire to cause a defective product to be manufactured.
毛細管製作業者為了製造出較利於銅線打線接合使用的毛細管而進行各種改善作業，但在銅線打線接合工序中所發生的不良問題改善上，有力不所逮之處。尤其是在毛細管物性增進及表面粗度兩方面上無法獲得讓業界滿意的效果。
The capillary manufacturer performs various improvement operations in order to manufacture a capillary tube which is advantageous for copper wire bonding, but it is difficult to grasp the problem of improvement in the copper wire bonding process. In particular, it is not possible to obtain satisfactory results in the industry in terms of capillary property improvement and surface roughness.
【將要解決的課題】
本發明之主要目的為提供一種在進行打線接合時，即使使用了硬質的銅材料，一樣可以具有優秀的接合黏著力、並能透過物性增進而延長交換週期的銅線接合用毛細管以及該毛細管的製造方法。
【課題之解決方法】
為了解決上述問題，本發明實施例的銅線接合用毛細管之製造方法為包含下列幾個階段。將氧化鋁(Al2
O3
)和氧化鎳(NiO)的混合粉末加熱後，完成鎳-氧化鋁(NiAl2
O4
)粉末的粉末製造階段；在製造完成的粉末上進行加壓成形工程後，完成毛細管的成形階段；在該毛細管成形體上進行加熱之後，完成毛細管燒結體的熱處理階段; 為了呈現打線接合用毛細管的功能，在經熱處理階段所得到的毛細管燒結體上進行形狀加工(Shape Forming)；以及為了形成凹凸形狀的凹凸部，在經形狀加工製程的毛細管之接管(TIP)表面上進行熱處理工序的粒子成長層形成階段。
此時，完成該熱處理階段後，還有對該毛細管燒結體進行熱間靜水壓成形的熱間靜水壓成形階段。除此之外，該熱間靜水壓成形階段乃於使用氬汽(Ar)環境之下所進行，氬汽壓力為20000 psi及25000 psi，氬汽溫度為1300 ℃及1550 ℃。
另外，進行過該粒子成長層形成階段後，依據打線接合條件，進行該凹凸部加工工序，之後再進行去除一部份之粒子成長層部分的部分去除階段。
另外，於該粉末製造階段，針對該氧化鋁和氧化鎳之混合粉末100重量部，添加0.1及1重量部的氧化鎳。此時，於該粉末製造階段，對於該鎳-氧化鋁粉末100重量部再添加10及20重量部的氧化鋯(ZrO2
)。還有於該粉末製造階段，更添加其分子量為600以下的聚乙二醇，當作結合劑(BINDER)使用。
另外，以正壓壓力(PRESS)方法進行該成形階段，並且在填充粉末的模具外側上設置壓電素子，進行正壓成形時，可於該模具內側之粉末上傳送震動力。
另外，利用該壓電素子將28 KHz的震動力傳送至模具內側的粉末上。
另外，(該熱處理工程可分成三個階段，第一階段為以180 ℃及220 ℃的溫度放置3小時至6小時，第2階段為花了10小時至15小時將溫度調高至600 ℃，第3階段為再花了5小時至8小時將溫度調高至1500 ℃及1580之後，再於1500 ℃及1580℃溫度之下，放置1小時至2小時)。
另外，於該粒子成長層形成階段，在處於形狀加工階段的該毛細管表面上，以1450 ℃及1650 ℃的溫度加熱 30分鐘及1小時的處理工程。
另外，該粒子成長層形成階段之後的該凹凸部，其平均表面粗度為0.2 μm及0.6 μm。
【發明之效果】
依照本發明之打線接合用毛細管製造方法所製造的打線接合用毛細管，由於以在氧化鋁上包含氧化鎳的方法提高氧化鋁粒子之間的結合力，所以可以有效提升耐磨力及耐熱衝擊力。則，使用本發明之打線接合用毛細管可以有效降低因受磨損及破壞而導致的不良現象。
另外，依據本發明之打線接合用毛細管，由於在毛細管接管表面上透過粒子成長層形成階段形成凹凸部，所以可以有效抑制使用硬度高之銅線在進行接合時所發生的滑動現象。如此一來，在進行接合工序的銅線上，可以非常確實地傳達毛細管的上下運動力，進而提升bonding黏著力。其結果，使用本發明之打線接合用毛細管進行銅線接合工序時，不但可以縮短毛細管不良所引起的交換週期，更可提高銅線之接合黏著力，故可降低製造過程的不良率。
[Questions to be solved]
A main object of the present invention is to provide a capillary for copper wire bonding and a capillary tube which can have excellent bonding strength and can improve the exchange period by using a hard copper material even when a wire bonding is used. Production method.
[Solutions of the subject]
In order to solve the above problems, the method for manufacturing a copper wire bonding capillary according to an embodiment of the present invention includes the following stages. After heating a mixed powder of aluminum oxide (Al 2 O 3 ) and nickel oxide (NiO), the powder production stage of the nickel-alumina (NiAl 2 O 4 ) powder is completed; after the pressure forming process is performed on the finished powder , completing the forming stage of the capillary; after heating on the capillary formed body, completing the heat treatment stage of the capillary sintered body; in order to exhibit the function of the capillary for wire bonding, shape processing is performed on the capillary sintered body obtained by the heat treatment stage (Shape Forming); and in order to form the uneven portion of the concavo-convex shape, the step of forming a particle growth layer in the heat treatment step is performed on the surface of the capillary tube (TIP) of the shape processing process.
At this time, after completion of the heat treatment step, there is also a hot hydrostatic pressure forming stage in which the capillary sintered body is subjected to hot hydrostatic forming. In addition, the hot hydrostatic forming stage was carried out using an argon (Ar) atmosphere with argon pressures of 20,000 psi and 25,000 psi and argon vapor temperatures of 1300 °C and 1550 °C.
Further, after the step of forming the particle growth layer, the uneven portion processing step is performed in accordance with the wire bonding conditions, and then the partial removal step of removing a part of the particle growth layer portion is performed.
Further, in the powder production stage, 0.1 and 1 part by weight of nickel oxide were added to 100 parts by weight of the mixed powder of alumina and nickel oxide. At this time, in the powder production stage, 10 and 20 parts by weight of zirconium oxide (ZrO 2 ) was further added to 100 parts by weight of the nickel-alumina powder. Further, in the powder production stage, polyethylene glycol having a molecular weight of 600 or less is further added and used as a binder (BINDER).
Further, the forming step is carried out by a positive pressure (PRESS) method, and piezoelectric elements are placed on the outer side of the mold filled with the powder, and when the positive pressure forming is performed, the vibration force can be transmitted to the powder inside the mold.
Further, the piezoelectric element was used to transmit a vibration force of 28 KHz to the powder on the inner side of the mold.
In addition, (the heat treatment project can be divided into three stages, the first stage is to place the temperature at 180 ° C and 220 ° C for 3 hours to 6 hours, and the second stage is to increase the temperature to 600 ° C for 10 hours to 15 hours. In the third stage, it takes another 5 hours to 8 hours to raise the temperature to 1500 ° C and 1580, and then at 1500 ° C and 1580 ° C for 1 hour to 2 hours).
Further, in the stage of forming the particle growth layer, the surface of the capillary at the shape processing stage was heated at a temperature of 1450 ° C and 1650 ° C for 30 minutes and 1 hour.
Further, the uneven portion after the particle growth layer formation step has an average surface roughness of 0.2 μm and 0.6 μm.
[Effects of the Invention]
According to the capillary for wire bonding manufactured by the capillary manufacturing method for wire bonding according to the present invention, since the bonding force between the alumina particles is improved by the method of containing nickel oxide on the alumina, the abrasion resistance and the thermal shock resistance can be effectively improved. . Then, the use of the capillary for wire bonding of the present invention can effectively reduce the problem caused by abrasion and damage.
Further, according to the capillary for wire bonding of the present invention, since the uneven portion is formed on the surface of the capillary tube through the step of forming the particle growth layer, it is possible to effectively suppress the sliding phenomenon which occurs when the copper wire having high hardness is joined. In this way, the upper and lower moving forces of the capillary can be conveyed very reliably on the copper wire that performs the joining process, thereby improving the bonding adhesive force. As a result, when the copper wire bonding step is performed by using the wire bonding capillary of the present invention, the exchange cycle caused by the capillary failure can be shortened, and the bonding strength of the copper wire can be improved, so that the defective rate in the manufacturing process can be reduced.
以下，為了更詳細說明本發明相關的技術內容，配合圖示進行說明的較佳實施例。Hereinafter, in order to explain the technical contents related to the present invention in more detail, a preferred embodiment will be described with reference to the drawings.
以下說明本發明之銅線接合用毛細管之製造方法。Hereinafter, a method for producing a copper wire bonding capillary of the present invention will be described.
第1圖係為說明本發明之打線接合用毛細管的製造方法的流程圖。第2圖係為本發明之打線接合用毛細管的製造方法中、使用於成形階段上的成形裝備之示意圖。第3圖係本發明之打線接合用毛細管的製造方法中、在形狀加工階段之前的打線接合用毛細管形象照片。第4圖係本發明之打線接合用毛細管的製造方法中、在形狀加工階段之後的打線接合用毛細管形象照片。Fig. 1 is a flow chart for explaining a method of manufacturing the wire bonding capillary of the present invention. Fig. 2 is a schematic view showing a molding apparatus used in a molding stage in the method for producing a wire bonding capillary of the present invention. Fig. 3 is a capillary image of a wire bonding before the shape processing stage in the method for producing a wire bonding capillary of the present invention. Fig. 4 is a capillary image of the wire bonding after the shape processing step in the method for producing the wire bonding capillary of the present invention.
如第1圖所示，本發明之銅線接合用毛細管的製造方法為包含粉末製造階段S10、成形階段S20、熱處理階段S30、形狀加工階段S50及粒子成長層形成階段S60。另外，本發明之銅線接合用毛細管之製造方法尚包括熱間靜水壓成形階段S40及粒子成長層部分去除階段S70。As shown in Fig. 1, the method for producing a copper wire bonding capillary of the present invention includes a powder production stage S10, a molding stage S20, a heat treatment stage S30, a shape processing stage S50, and a particle growth layer formation stage S60. Further, the method for producing a copper wire bonding capillary of the present invention further includes a hot hydrostatic molding stage S40 and a particle growth layer partial removal stage S70.
粉末製造階段S10係指將氧化鋁(Al2 O3 )和氧化鎳(NiO)的混合粉末做加熱之後，製作完成綠色的堅晶石相鎳-氧化鋁(NiAl2 O3 )粉末的階段。此時，該氧化鋁為其純度為99.99%，且平均粒子大小為0.2 μm及0.3 μm。另外，針對該氧化鋁100重量部，亦可添加0.05重量部的氧化鎂(MgO)。該氧化鎳純度在99 %以上，且其平均粒子大小為0.5 μm及0.7 μm。另外，該氧化鎳除了可以提高氧化鋁粒子之間的結合力之外，在稍後要進行的粒子成長層形成階段(S60)中，與爐子內溫度一起控制表面粗度值。建議的較佳氧化鎳粉末含有量為，在氧化鋁和氧化鎳之混合粉末上，針對氧化鋁粉末100重量部，添加0.1及1重量部。若該氧化鎳的含量未滿0.1重量部的話，會造成稍後將進行的粒子成長層形成階段S60無法充分達成毛細管接管的凹凸化作業，所以會導致在使用該毛細管進行銅線接合時，無法獲得充分的接合黏著力之問題。還有，若該氧化鎳的含量超過1重量部，由於該氧化鎳值會超過氧化鋁粒子之間的結合劑許可上限，所以在稍後將進行的粒子成長層形成階段S60中，會出現表面膨脹而導致表面龜裂的情形。The powder production stage S10 is a stage in which a green crucible phase nickel-alumina (NiAl 2 O 3 ) powder is produced by heating a mixed powder of alumina (Al 2 O 3 ) and nickel oxide (NiO). At this time, the alumina had a purity of 99.99% and an average particle size of 0.2 μm and 0.3 μm. Further, 0.05 parts by weight of magnesium oxide (MgO) may be added to 100 parts by weight of the alumina. The nickel oxide has a purity of more than 99% and an average particle size of 0.5 μm and 0.7 μm. Further, in addition to the adhesion between the alumina particles, the nickel oxide controls the surface roughness value together with the temperature in the furnace in the particle growth layer formation stage (S60) to be performed later. The preferred nickel oxide powder content is preferably such that 0.1 and 1 part by weight are added to 100 parts by weight of the alumina powder on the mixed powder of alumina and nickel oxide. When the content of the nickel oxide is less than 0.1 part by weight, the particle growth layer formation stage S60 to be performed later may not sufficiently achieve the unevenness of the capillary tube. Therefore, when the copper wire is joined by using the capillary, it is impossible. Get the full adhesion problem. Further, if the content of the nickel oxide exceeds 1 part by weight, since the nickel oxide value exceeds the upper limit of the bonding agent between the alumina particles, the surface may appear in the particle growth layer forming stage S60 to be performed later. Swelling causes the surface to crack.
除此之外，在粉末製造階段S10中，亦可在該鎳-氧化鋁上添加氧化鋯(ZrO2 )。更具體說明的話，針對鎳-氧化鋁100重量部，混合10及20重量部的氧化鋯後，再進行24小時及36小時的濕式球磨(Ball Mill)，可製造完成鎳-氧化鋁-氧化鋯複合體粉末。此時，該氧化鋯的純度為99.9 %，且平均粒子大小為0.2 μm及0.3 μm。如前述內容，添加氧化鋯除可有效抑制氧化鋁粒子的脫落現象之外，亦可獲得提高毛細管之加工性的效果。In addition to this, in the powder production stage S10, zirconium oxide (ZrO 2 ) may be added to the nickel-alumina. More specifically, after mixing 10 and 20 parts by weight of zirconia for 100 parts by weight of nickel-alumina, and then performing wet ball milling (Ball Mill) for 24 hours and 36 hours, nickel-alumina-oxidation can be completed. Zirconium composite powder. At this time, the zirconia had a purity of 99.9% and an average particle size of 0.2 μm and 0.3 μm. As described above, the addition of zirconia can effectively suppress the fall-off phenomenon of the alumina particles, and can also obtain the effect of improving the processability of the capillary.
另外，粉末製造階段S10亦可添加結合劑。該結合劑為可以使用其分子量小於600的聚乙二醇(PEG)。若該接合劑之分子量大於600的話，在接著要進行的成形階段S20上，會發生彈性復原現象，因此導致毛細管上的龜裂問題或者毛細管尺寸不均勻的現象。Further, a binder may be added in the powder production stage S10. The binder is a polyethylene glycol (PEG) having a molecular weight of less than 600. If the molecular weight of the binder is more than 600, an elastic recovery phenomenon occurs in the molding stage S20 to be carried out next, which causes a cracking problem on the capillary or a phenomenon in which the capillary size is not uniform.
該成形階段S20係指在透過粉末製造階段S10所製造完成的混合粉末上，進行加壓成形作業後，形成一種毛細管成形體的階段。並且，該成形階段S20的進行方法，乃利用第2圖之壓縮成形裝備，對於該粉末(P)進行正壓壓力工序。此時，該成形階段S20上所使用的壓縮成形裝備包含鋼模(Die) 10、模具20、壓電素子30、上衝床(punch)部40、下衝床(punch)部50，其中，該模具20被插入而固定在鋼模10的中心部，其內側並具有一可填充粉末(P)的內部空間，該內部空間呈現出從上往下串通在一起的形狀，該壓電素子30被設置在鋼模10的外側，並將超音波震動傳送至模具內側之粉末(P)上，該上衝床部40和模具20之上端開口部呈現出互相對應的形狀，並且透過上下運動針對該模具20內側的粉末(P)進行加壓工程，該下衝床部50和模具20的下端開口部呈互相對應之形狀，並且透過上下運動針對該模具20內側的粉末(P)進行加壓。此時，在該下衝床部50的上部，亦可形成圓錐形狀部材，以造就毛細管內側的空間部。This molding stage S20 is a stage in which a capillary molded body is formed after performing a press forming operation on the mixed powder which has been produced through the powder production stage S10. Further, in the method of performing the molding step S20, the positive pressure step is performed on the powder (P) by the compression molding equipment of Fig. 2 . At this time, the compression molding apparatus used in the forming stage S20 includes a steel die (Die) 10, a mold 20, a piezoelectric element 30, an upper punch portion 40, and a lower punch portion 50, wherein the mold 20 is inserted and fixed to the center portion of the steel mold 10, and has an inner space which can be filled with powder (P) inside, and the inner space exhibits a shape which is strung together from top to bottom, and the piezoelectric element 30 is set. On the outer side of the steel mold 10, the ultrasonic vibration is transmitted to the powder (P) on the inner side of the mold, and the upper punch portion 40 and the upper end opening portion of the mold 20 assume mutually corresponding shapes, and the upper and lower movements are directed to the mold 20 The inner powder (P) is subjected to a press working, and the lower punching portion 50 and the lower end opening portion of the mold 20 have mutually corresponding shapes, and the powder (P) inside the mold 20 is pressurized by the vertical movement. At this time, a conical member may be formed on the upper portion of the lower punching portion 50 to create a space portion inside the capillary.
另外，在成形階段S20上，從該上衝床部40及下衝床部50所產生出來的正壓壓力力量，建議使用1000 kg及1500 kg。若該正壓壓力的力量小於1000 kg，由於該模具20內的粉末(P)填充密度不夠高，可能會導致製造完成的毛細管之耐磨性及耐舊性等物理性質不夠理想。另外，若該正壓壓力大於1500 kg，由於壓力力量過大，反而會導致成形密度降低而不良的情形。Further, in the forming stage S20, it is recommended to use 1000 kg and 1500 kg for the positive pressure and pressure generated from the upper punching portion 40 and the lower punching portion 50. If the force of the positive pressure is less than 1000 kg, the powder (P) packing density in the mold 20 is not sufficiently high, which may result in poor physical properties such as wear resistance and durability of the manufactured capillary. Further, if the positive pressure is more than 1500 kg, the pressure is excessively increased, which may result in a decrease in the forming density and a poor condition.
另外，為了提升被填充於模具20內側的粉末(P)之填充密度、將震動力傳送給壓電素子30內側，固裝設壓電素子30。尤其是相較於在未震動狀況下使用單純正壓方法進行正壓壓力工序的情況，採用具有壓電素子30的裝備將28 KHz之超音波震動傳送給模具20內側的粉末(P)時，所形成的毛細管成形體之填充密度提升了20 %至30 %。故，藉由該壓電素子30將震動傳送給模具20內側的粉末(P)，可以獲得密度高又堅固的毛細管。Further, in order to increase the packing density of the powder (P) filled inside the mold 20 and transmit the vibration force to the inside of the piezoelectric element 30, the piezoelectric element 30 is fixed. In particular, when a positive pressure step is performed using a simple positive pressure method under a non-vibration condition, when the ultrasonic vibration of 28 KHz is transmitted to the powder (P) inside the mold 20 by the apparatus having the piezoelectric element 30, The packing density of the formed capillary formed body is increased by 20% to 30%. Therefore, by the piezoelectric element 30 transmitting the vibration to the powder (P) inside the mold 20, a high-density and strong capillary can be obtained.
該熱處理階段S30係指在透過成形階段S20製造完成的毛細管成形體上進行加熱工程後，製作完成毛細管管燒結體的階段。This heat treatment stage S30 is a stage in which a capillary tube sintered body is completed after performing a heating process on a capillary formed body which has been produced through the forming stage S20.
該熱處理階段S30可包含第1熱處理階段、第2熱處理階段及第3熱處理階段。其中，該第1熱處理階段乃在進行脫脂工程時、為了防止因接合劑膨脹而導致毛細管成形體龜裂的階段。此時，在180 ℃及220 ℃的溫度下維持3 小時及6小時。該第2熱處理階段乃為了讓binder完全燃燒，在進行過第1熱處理階段後、接下來進行的熱處理階段。此時，花了10小時及15小時的時間，將溫度慢慢調高到600 ℃。該第3熱處理階段乃為了提高毛細管燒結體之強度，在進行過第2熱處理階段後﹑接下來進行的熱處理階段。此時，在花費5小時及8小時的時間、將溫度慢慢調高到1500 ℃及1580 ℃之後，再維持1小時及2小時。透過該熱處理階段S30所製作成形的毛細管，不但可以提升其密度，還可以提升其強度。透過熱處理階段S30所製造的毛細管成形體為受到氧化鎳之發色影響，呈現出如第3圖所示的綠色。The heat treatment stage S30 may include a first heat treatment stage, a second heat treatment stage, and a third heat treatment stage. Here, the first heat treatment step is a step of preventing cracking of the capillary formed body due to expansion of the bonding agent during the degreasing process. At this time, it was maintained at 180 ° C and 220 ° C for 3 hours and 6 hours. In the second heat treatment stage, in order to completely burn the binder, the heat treatment stage is performed after the first heat treatment stage and the subsequent heat treatment stage. At this point, it took 10 hours and 15 hours to slowly increase the temperature to 600 °C. In the third heat treatment stage, in order to increase the strength of the capillary sintered body, the heat treatment stage is performed after the second heat treatment stage. At this time, after the time was 5 hours and 8 hours, the temperature was gradually raised to 1500 ° C and 1580 ° C, and then maintained for 1 hour and 2 hours. The capillary formed by the heat treatment stage S30 can not only increase the density but also increase the strength. The capillary formed body produced through the heat treatment stage S30 is affected by the color development of nickel oxide, and exhibits green color as shown in Fig. 3.
熱間靜水壓成形階段S40係指為了將毛細管的材質物性效果提升到最高、再次同時進行毛細管成形和燒結工序的階段。首先於該熱間靜水壓成形階段S40，將該毛細管燒結體放入多孔性氧化鋁爐子後，將該氧化鋁爐子放置在熱間靜水壓壓力裝備上。該氧化鋁爐子為可以自從熱間靜水壓成形裝備之發熱體及耐火材材質之石墨(Graphite)的影響保護毛細管(當進行靜水壓成形時，由於使用氧化鋁爐子，所以自從熱間靜水壓成形裝備之發熱體及耐火材材質之石墨(Graphite)可以保護毛細管而獲得防止毛細管受污染的情形。並且該熱間靜水壓所形成的壓力傳送媒介物乃維可以使用高純度的氬氣(Ar)。在該熱間靜水壓成形階段S40中，較建議的方法為將該毛細管燒結體放置在1300 ℃及1550 ℃的高溫、20000 psi及25000 psi的高壓環境下，經30分鐘及2小時完成熱間靜水壓成形工序。含多量的鎳-氧化鋁的本發明毛細管燒結體在1300℃及1550℃溫度範圍之下，經過熱間靜水壓進行成形工序，不但不會產生粒子效果，同時還可以獲得將殘留在毛細管燒結體內部的氣孔降至最低的效果。若在1300 ℃及1550 ℃範圍以外的溫度下進行熱間靜水壓成形階段S40工序，可能會導致毛細管燒結區動力變弱或是變過大，進而造成材料物性效果降低的問題。另外，在該熱間靜水壓成形階段S40中，若氣壓小於20000 psi，無法完全去除加壓工序中所殘留的氣孔，進而導致毛細管燒結體上出現粒子而材料物性降低的問題。The hot hydrostatic forming stage S40 is a stage in which the physical properties of the capillary are raised to the highest and the capillary forming and sintering processes are simultaneously performed. First, in the hot water hydrostatic forming stage S40, the capillary sintered body is placed in a porous alumina furnace, and the alumina furnace is placed on a hot hydrostatic pressure equipment. The alumina furnace protects the capillary tube from the influence of the heat generating body of the hot water hydrostatic forming equipment and the graphite material of the refractory material (when the hydrostatic forming is performed, since the alumina furnace is used, since the heat is static The heating element of the hydroforming device and the graphite material of the refractory material can protect the capillary tube from the contamination of the capillary tube, and the pressure transmitting medium formed by the hot water hydrostatic pressure can use high purity argon. Gas (Ar). In the hot hydrostatic forming stage S40, the preferred method is to place the capillary sintered body at a high temperature of 1300 ° C and 1550 ° C, a high pressure environment of 20,000 psi and 25,000 psi for 30 minutes. And the hot hydrostatic forming process is completed in 2 hours. The capillary sintered body of the present invention containing a large amount of nickel-alumina is subjected to a hot water hydrostatic pressure at a temperature of 1300 ° C and a temperature of 1550 ° C, and is not produced. The particle effect can also achieve the effect of minimizing the pores remaining inside the capillary sintered body. If the temperature is outside the range of 1300 °C and 1550 °C, thermal maturation is performed. In the press forming stage S40, the power in the capillary sintering zone may become weaker or larger, which may cause a problem of lowering the physical properties of the material. In addition, in the hot water hydrostatic forming stage S40, if the gas pressure is less than 20,000 psi, The pores remaining in the pressurization step are completely removed, which causes a problem that particles appear on the capillary sintered body and the physical properties of the material are lowered.
該形狀加工階段S50係指依據Wire bonding工程條件，將毛細管形狀加工成具有該打線接合用毛細管功能的一階段。則，如第5圖所示，該形狀加工階段S50係指使用鑽石輪、鑽石墨、鑽石合成物等工具，將該毛細管製作成如第6圖所示的具有打線接合用毛細管功能的毛細管。This shape processing stage S50 refers to a stage in which the capillary shape is processed to have the capillary function for the wire bonding according to the Wire bonding engineering conditions. Then, as shown in Fig. 5, the shape processing stage S50 refers to a capillary having a capillary function for wire bonding as shown in Fig. 6 by using a tool such as a diamond wheel, a diamond ink, or a diamond composition.
該粒子成長層形成階S60係指經形狀加工階段S50處理的毛細管之前端部，則，為了在接管表面上形成凹凸形狀的凹凸部，對毛細管的接管表面進行熱處理，完成毛細管表面粒的階段。由於該粒子成長層形成階段S60中所形成的毛細管接管表面之凹凸部，會抑制銅線接合時所發生的滑動問題，所以可以將毛細管的上下運動力確實傳送給銅線，故可獲得提升接合黏著力的效果。在該粒子成長層形成階段S60中，形成凹凸部後的毛細管表面粗度(RMAX)，為依據粉末製造階段S10所混入的氧化鎳之含量，與粒子成長層形成階段S60中的熱處理溫度有所不同。則，進行該粒子成長層形成階段S60時，在相同的熱處理溫度之下，若在粉末製造階段S10中混入的氧化鎳含量越多，毛細管的表面粗度(RMAX)值則越小。另外，進行該粒子成長層形成階段S60時，在相同的氧化鎳含量條件下，粒子成長層形成階段S60的熱處理溫度越高，則毛細管的表面粗度(RMAX)值會越提升。關於此問題，將以實施例及比較例進一步詳細說明相關關係。透過這種粒子成長層形成階段S60所形成的毛細管之凹凸部，建議平均表面粗度採用0.2 μm及0.6 μm。若該凹凸部平均表面粗度小於0.2 μm的話，則無法充分完成為了提升接合黏著力所形成的凹凸部。還有，若該凹凸部的平均表面粗度大於0.6 μm的話，進行接合時所使用的金屬線會很容易被吸入凹部內，將降低接合黏著力而導致毛細管之交換週期變縮短的問題。另外，經過該粒子成長層形成階段S60後，為了讓毛細管前端部之平均表面粗度成為0.2 μm及0.6 μm，需在經形狀加工階段S50後的毛細管表面上，以1450 ℃及1650 ℃的溫度進行30分鐘及1小時的加熱工程。The particle growth layer formation step S60 refers to the end portion of the capillary portion processed by the shape processing step S50. Then, in order to form the uneven portion on the surface of the nozzle, heat treatment is performed on the surface of the capillary tube to complete the stage of the capillary surface. Since the uneven portion of the surface of the capillary tube formed in the particle growth layer formation step S60 suppresses the sliding problem occurring during the copper wire bonding, the vertical movement force of the capillary can be surely transmitted to the copper wire, so that the lifting engagement can be obtained. The effect of adhesion. In the particle growth layer formation stage S60, the capillary surface roughness (RMAX) after the uneven portion is formed is the content of the nickel oxide mixed in the powder production stage S10, and the heat treatment temperature in the particle growth layer formation stage S60 is different. Then, when the particle growth layer formation stage S60 is performed, the surface roughness (RMAX) value of the capillary is smaller as the content of the nickel oxide mixed in the powder production stage S10 is larger at the same heat treatment temperature. Further, when the particle growth layer formation step S60 is performed, the surface roughness (RMAX) value of the capillary is increased as the heat treatment temperature of the particle growth layer formation step S60 is higher under the same nickel oxide content. Regarding this problem, the correlation will be further described in detail by way of examples and comparative examples. It is recommended that the average surface roughness be 0.2 μm and 0.6 μm by the concave and convex portions of the capillary formed in the particle growth layer formation stage S60. When the average surface roughness of the uneven portion is less than 0.2 μm, the uneven portion formed to increase the bonding adhesive force cannot be sufficiently completed. Further, when the average surface roughness of the uneven portion is more than 0.6 μm, the metal wire used for bonding is easily sucked into the concave portion, which lowers the bonding adhesive force and causes the capillary exchange period to be shortened. Further, after the particle growth layer formation step S60, in order to make the average surface roughness of the capillary tip end portion 0.2 μm and 0.6 μm, it is necessary to have a temperature of 1450 ° C and 1650 ° C on the capillary surface after the shape processing step S50. Perform heating work for 30 minutes and 1 hour.
該粒子成長層部分去除階段S70係指依據金屬線的接合條件，針對在粒子成長層形成階段S60中所形成的凹凸部進行微細加工後、去除部分凹凸部的階段。則，在粒子成長層部分去除階段S70中，如第10圖所示，依據廠商的需求或金屬線之接合條件，透過微細加可以去除部分的凹凸部。This particle growth layer partial removal stage S70 is a stage in which the uneven portion formed in the particle growth layer formation step S60 is finely processed and the partial uneven portion is removed in accordance with the bonding condition of the metal wire. Then, in the particle growth layer partial removal step S70, as shown in FIG. 10, a part of the uneven portion can be removed by fine addition depending on the manufacturer's demand or the bonding condition of the metal wire.
如上述方式製造出的本發明銅線接合用毛細管，因為在粉末製造階段S10中添加氧化鎳，所以製造完成後會呈現出綠色的管體。如此一來，本發明之銅線接合用毛細管因呈綠色之關係，所以進行打線接合工作的人員比較容易區分白色系統的毛細管。因此能依照打線接合條件很迅速地交換毛細管。The copper wire bonding capillary of the present invention produced as described above has a green tube body after the completion of the production because nickel oxide is added in the powder production stage S10. As described above, since the capillary for copper wire bonding of the present invention has a green relationship, it is easier for a person who performs wire bonding work to distinguish the capillary of the white system. Therefore, the capillary can be exchanged very quickly in accordance with the wire bonding conditions.
以下，透過實施例及比較例進一步說明依氧化鎳之含量﹑打線接合用毛細管之表面粗度值不同的情形。Hereinafter, the case where the content of the nickel oxide and the surface roughness of the capillary for wire bonding are different depending on the content of the nickel oxide will be further described in the examples and the comparative examples.
第1圖係說明本發明之打線接合用毛細管製造方法的流程圖。第2圖係為本發明之打線接合用毛細管的製造方法中、使用於成形階段的成形裝備示意圖。第5a圖及第5f圖係為依據氧化鎳含量，比較打線接合用毛細管實施例及比較例的表面粗度值、進而得出的打線接合用毛細管前端之注射電子顯微鏡照片。Fig. 1 is a flow chart showing a method of manufacturing a capillary for wire bonding according to the present invention. Fig. 2 is a schematic view showing a molding apparatus used in a molding stage in the method for producing a wire bonding capillary of the present invention. Fig. 5a and Fig. 5f show an electron micrograph of the tip end of the wire bonding capillary obtained by comparing the surface roughness values of the capillary bonding examples and the comparative examples of the wire bonding according to the nickel oxide content.
依實施例1及實施例4所製造的毛細管和比較例 1及比較例2內容所製造的毛細管，除了在粉末製造階段S10中所添加的氧化鎳含量以外，其他皆以相同製造方法製作而成。依實施例1及實施例4所製造的毛細管和依比較例1及比較例2所製造的毛細管的具體製造方法如下。The capillaries produced in the first embodiment and the fourth embodiment and the capillaries produced in the contents of Comparative Example 1 and Comparative Example 2 were produced by the same manufacturing method except for the nickel oxide content added in the powder production stage S10. . The capillary tube produced in each of Examples 1 and 4 and the capillary produced by Comparative Example 1 and Comparative Example 2 were specifically produced as follows.
首先，將純度為99.99%、平均粒子大小為0.2 μm的氧化鋁(Al2 O3 )和純度99%、平均粒子大小為0.5 μm的氧化鎳(NiO)混合之後，在1000 ℃溫度下進行1小時的熱處理，進而製造完成鎳-氧化鋁(NiAl2 O4 )。此時，針對該氧化鋁粉末100重量部，添加在實施例及比較例中的氧化鎳(NiO)粉末含量如下列表1所示。接著在鎳-氧化鋁(NiAl2 O4 )上，添加純度為99%、其平均粒子大小為0.2 μm的氧化鋯(ZrO2 )。此時，針對鎳-氧化鋁(NiAl2 O4 ) 100重量部，添加15重量部及其分子量600的聚乙二醇(PEG)做為接合劑來使用，並進行粉末製造階段S10。First, alumina (Al 2 O 3 ) having a purity of 99.99% and an average particle size of 0.2 μm, and nickel oxide (NiO) having a purity of 99% and an average particle size of 0.5 μm are mixed, and then subjected to a temperature of 1000 ° C. After an hour of heat treatment, nickel-alumina (NiAl 2 O 4 ) was completed. At this time, the nickel oxide (NiO) powder content added to the 100 parts by weight of the alumina powder in the examples and the comparative examples is shown in Table 1 below. Next, zirconium oxide (ZrO 2 ) having a purity of 99% and an average particle size of 0.2 μm was added to nickel-alumina (NiAl 2 O 4 ). At this time, 15 parts by weight and polyethylene glycol (PEG) having a molecular weight of 600 were added as a binder for 100 parts by weight of nickel-alumina (NiAl 2 O 4 ), and the powder production stage S10 was carried out.
如第2圖所示，在把粉末製造階段S10中所製造的粉末放入於成形裝備之模具內後，進行正壓成形並製造完成毛細管成形體的成形階段S20。此時，透過上衝床部和下衝床部，對該粉末所施壓的壓力力量為1500 kg，並由設置在該模具外側的壓電素子，傳送28 KHz的震動至模具內側之粉末上。As shown in Fig. 2, after the powder produced in the powder production stage S10 is placed in a mold of a molding apparatus, positive pressure forming is performed to complete the molding stage S20 of the completed capillary formed body. At this time, the pressure force applied to the powder was 1500 kg through the upper punching portion and the lower punching portion, and a vibration of 28 KHz was transmitted from the piezoelectric element disposed outside the mold to the powder on the inner side of the mold.
另外，依據成形階段S20所製造的毛細管成形體，經在200 ℃條件下放置4小時的第1熱處理階段進而完成第1熱處理階段後，再以10小時的時間，將溫度提高至600 ℃的第2熱處理階段，在完成第2熱處理階段後，以5小時的時間將溫度調高到1500 ℃後，進行在1500 ℃溫度下放置2小時的第3熱處理階段，經過這些熱處理階段S30後即製造完成毛細管燒結體。Further, according to the capillary molded body produced in the molding stage S20, after the first heat treatment stage was allowed to stand at 200 ° C for 4 hours, and then the first heat treatment stage was completed, the temperature was increased to 600 ° C for 10 hours. 2 In the heat treatment stage, after the completion of the second heat treatment stage, the temperature is adjusted to 1500 ° C for 5 hours, and then the third heat treatment stage is carried out at 1500 ° C for 2 hours, and after the heat treatment stage S30 is completed. Capillary sintered body.
依據熱處理階段S30所製造的毛細管燒結體，再經過熱間靜水壓成形階段S40以提高毛細管本身的硬度值。此時，在該熱間靜水壓成形階段S40中，以氬氣(Ar) 做為傳達媒介，並在25000 psi壓力和1300 ℃溫度的條件下進行2小時加工工序。The capillary sintered body produced in the heat treatment stage S30 is further subjected to a hot hydrostatic forming stage S40 to increase the hardness value of the capillary itself. At this time, in the hot water hydrostatic forming stage S40, argon gas (Ar) was used as a medium to carry out the processing for 2 hours under the conditions of a pressure of 25,000 psi and a temperature of 1300 °C.
另外，讓經熱間靜水壓成形階段(S40)之後的毛細管燒結體具打線接合功能，繼續進行加工毛細管形象的形狀加工階段S50。Further, the capillary sintered body after the hot hydrostatic forming stage (S40) has a wire bonding function, and the shape processing stage S50 of processing the capillary image is continued.
接著，進行形狀加工階段S50後，在毛細管前端部以1580 ℃溫度進行45分鐘的熱處理工程，形成粒子以達到凹凸化效果，最後製作完成打線接合用毛細管。Next, after performing the shape processing stage S50, heat treatment was performed at a tip end portion of the capillary at a temperature of 1,580 ° C for 45 minutes to form particles to achieve a roughening effect, and finally, a capillary for wire bonding was completed.
另外，依據在實施例及比較例之粉末製造階段S10中所添加的氧化鎳含量和氧化鎳含量變化，完成的打線接合用毛細管表面粗度(RMAX)值為如下列表1所示。第5a圖為依據實施例1所製造的毛細管之注射電子顯微鏡照片，第5b圖為依據實施例2所製造的毛細管之注射電子顯微鏡照片，第5c圖為依據實施例3所製造的毛細管之注射電子顯微鏡照片，第5d圖為依據實施例4所製造的毛細管之注射電子顯微鏡照片。除此之外，第5e圖為依據比較例1所製造的毛細管之注射電子顯微鏡照片，第5f圖為依據比較例2所製造的毛細管之注射電子顯微鏡照片。Further, according to the changes in the nickel oxide content and the nickel oxide content added in the powder production stage S10 of the examples and the comparative examples, the completed capillary surface roughness (RMAX) values of the wire bonding were as shown in the following Table 1. Fig. 5a is an injection electron micrograph of a capillary tube manufactured according to Example 1, Fig. 5b is an injection electron micrograph of a capillary tube manufactured according to Example 2, and Fig. 5c is an injection of a capillary tube manufactured according to Example 3. Electron micrograph, Fig. 5d is an injection electron micrograph of a capillary tube produced in accordance with Example 4. In addition, Fig. 5e is an injection electron micrograph of a capillary tube produced according to Comparative Example 1, and Fig. 5f is an injection electron micrograph of a capillary tube manufactured according to Comparative Example 2.
【表1】【Table 1】
參考該表1內容，可以確認氧化鎳含量越高，該毛細管的表面粗度值則越低的事實。並可確認該毛細管之最理想的表面粗度值0.2 μm及0.6 μm，為出現在實施例1及實施例4中﹑氧化鎳之含量為0.1及1 重量部的情況。並如第5e圖所示，可以確認在比較例1的毛細管上幾乎不會出現凹凸部所造成的表面粗度。另外如第5f圖所示，可以確認比較例2上的毛細管因已超過氧化鎳(NiO)之限值上限，所以氧化鋁粒子之間出現因膨脹所造成的龜裂現象。Referring to the contents of Table 1, it can be confirmed that the higher the nickel oxide content, the lower the surface roughness value of the capillary. It was confirmed that the optimum surface roughness values of the capillary were 0.2 μm and 0.6 μm, which were the case where the content of nickel oxide was 0.1 and 1 part by weight in Examples 1 and 4. As shown in Fig. 5e, it was confirmed that the surface roughness caused by the uneven portion was hardly observed in the capillary of Comparative Example 1. Further, as shown in Fig. 5f, it was confirmed that the capillary in Comparative Example 2 had exceeded the upper limit of the limit of nickel oxide (NiO), so that cracking due to expansion occurred between the alumina particles.
以下，透過實施例及比較例進一步詳細說明在粒子成長層形成階段中，依熱處理溫度而造成打線接合用毛細管之表面粗度值不同的情形。第6a圖及第6d圖係在粒子成長層形成階段上，依據熱處理溫度的變化，比較毛細管實施例及比較例的表面粗度值，進而得出打線接合用毛細管前端部之注射電子顯微鏡至照片。Hereinafter, the case where the surface roughness value of the wire bonding capillary is different depending on the heat treatment temperature in the particle growth layer formation stage will be described in detail by way of examples and comparative examples. Fig. 6a and Fig. 6d compare the surface roughness values of the capillary examples and the comparative examples in the formation stage of the particle growth layer, and according to the change of the heat treatment temperature, the injection electron microscope to the photo of the front end portion of the capillary for wire bonding is obtained. .
依比較例3、實施例5及實施例7所製造的毛細管在粒子成長層形成階段S60中，除了熱處理溫度之外，其他部分皆以相同的製造方法製造而成。依據比較例3、實施例5及實施例7所製造的毛細管，其具體製造方法如下。The capillary tubes produced in Comparative Example 3, Example 5, and Example 7 were produced in the particle growth layer formation stage S60 except for the heat treatment temperature, and the other portions were produced by the same production method. The specific manufacturing method of the capillary tube manufactured according to Comparative Example 3, Example 5, and Example 7 is as follows.
首先，針對純度為99.99%、平均粒子大小為0.2 μm的氧化鋁(Al2 O3 ) 100重量部，加入0.5重量部的純度為99%、平均粒子大小為0.5 μm的氧化鎳(NiO)後，在1000 ℃溫度下，進行1小時的熱處理並製作完成鎳-氧化鋁(NiAl2 O4 )。接著，在鎳-氧化鋁(NiAl2 O4 )中加上純度為99%、平均粒子大小為0.2 μm的氧化鋯(ZrO2 )，此時，針對鎳-氧化鋁(NiAl2 O4 ) 100重量部，加上15重量部的氧化鋯(ZrO2 )及其分子量為600以下的聚乙二醇，當作接合劑使用。此階段為粉末製造階段S10。First, for 0.5 parts by weight of alumina (Al 2 O 3 ) having a purity of 99.99% and an average particle size of 0.2 μm, 0.5 parts by weight of nickel oxide (NiO) having a purity of 99% and an average particle size of 0.5 μm was added. The heat treatment was carried out for 1 hour at a temperature of 1000 ° C to prepare nickel-aluminum oxide (NiAl 2 O 4 ). Next, nickel - aluminum (NiAl 2 O 4) are coupled with a purity of 99% and an average particle size of 0.2 μm of zirconia (ZrO 2), this time, for a nickel - aluminum (NiAl 2 O 4) 100 The weight portion was added with 15 parts by weight of zirconium oxide (ZrO 2 ) and polyethylene glycol having a molecular weight of 600 or less, and used as a bonding agent. This stage is the powder manufacturing stage S10.
另外，如第2圖所示，將粉末製造階段S10中所製造的粉末，放置在成形裝備的模具內後，接著進行以正壓成形方法製造完成毛細管成形體的成形階段S20。此時，透過上衝床部和下衝床部，對於該粉末所施壓的壓力力量為1500 kg，並由設置在該模具外側的壓電素子，傳送28 KHz的震動到模具內側的粉末。Further, as shown in Fig. 2, after the powder produced in the powder production stage S10 is placed in the mold of the molding equipment, the molding stage S20 of the capillary molded body is completed by the positive pressure molding method. At this time, the pressure force applied to the powder was 1500 kg through the upper punching portion and the lower punching portion, and the powder of 28 KHz was transmitted to the inside of the mold by the piezoelectric element disposed outside the mold.
另外，依成形階段S20所製造的毛細管成形體，再經於200 ℃溫度條件下放置4小時的第1熱處理階段並完成第1熱處理階段之後，再以10小時的時間，將溫度提高至600 ℃的第2熱處理階段，在完成第2熱處理階段後，再以5小時的時間，將溫度調高到1500 ℃後，於1500 ℃溫度條件下放置2小時以進行第3熱處理階段，經過這些熱處理階段S30後，即製造完成毛細管燒結體。Further, the capillary molded body produced in the forming stage S20 is further subjected to the first heat treatment step at a temperature of 200 ° C for 4 hours and the first heat treatment step is completed, and then the temperature is increased to 600 ° C for 10 hours. In the second heat treatment stage, after the completion of the second heat treatment stage, the temperature is adjusted to 1500 ° C for 5 hours, and then placed at 1500 ° C for 2 hours to carry out the third heat treatment stage. After S30, the capillary sintered body is manufactured.
依據熱處理階段S30所製造的毛細管燒結體，係為在經過熱間靜水壓成形階段S40後提高毛細管本身硬度值的一道手續。此時，在該熱間靜水壓成形階段S40中，以氬氣(Ar)做為傳達媒介，並在25000 psi壓力和1300 ℃溫度條件下進行2小時工序。The capillary sintered body produced according to the heat treatment stage S30 is a procedure for increasing the hardness value of the capillary itself after passing through the hot hydrostatic forming stage S40. At this time, in the hot water hydrostatic forming stage S40, argon gas (Ar) was used as a medium, and a 2 hour process was performed under a pressure of 25,000 psi and a temperature of 1300 °C.
另外，在經過熱間靜水壓成形階段S40後的毛細管燒結體獲得打線接合功能後，繼續進行加工毛細管形象的形狀加工階段S50。Further, after the capillary sintered body having passed through the hot hydrostatic forming stage S40 obtains the wire bonding function, the shape processing stage S50 of processing the capillary image is continued.
接著，進行形狀加工階段S50之後，再進行粒子成長層形成階段S60。則，毛細管前端部上進行45分鐘的熱處理工程之後，形成粒子而達到凹凸化效果，而最後製作完成打線接合用毛細管。表2所示內容乃為比較例及實施例製造方法在粒子成長層形成階段S60中的熱處理溫度。Next, after the shape processing stage S50 is performed, the particle growth layer formation stage S60 is performed. Then, after performing a heat treatment process for 45 minutes on the tip end portion of the capillary, particles were formed to have a roughening effect, and finally, a capillary for wire bonding was completed. The contents shown in Table 2 are the heat treatment temperatures in the particle growth layer formation stage S60 of the comparative example and the embodiment production method.
另外，在實施例及比較例之粒子成長層形成階段S60中，依據熱處理溫度和熱處理溫度變化，打線接合用毛細管之表面粗度(RMAX)值為如表2所示。而第6a圖為依據比較例3所製造之毛細管的注射電子顯微鏡照片。另外，第6b圖依據實施例5所製造之毛細管的注射電子顯微鏡照片，第 6c圖為依據實施例6所製造之毛細管注射電子顯微鏡照片，第6d圖為依據實施例7所製造之毛細管的注射電子顯微鏡照片。Further, in the particle growth layer formation stage S60 of the examples and the comparative examples, the surface roughness (RMAX) values of the wire bonding capillary were as shown in Table 2 in accordance with the heat treatment temperature and the heat treatment temperature change. Fig. 6a is an injection electron micrograph of a capillary tube produced in accordance with Comparative Example 3. In addition, Fig. 6b is an injection electron micrograph of a capillary tube produced in accordance with Example 5, Fig. 6c is a capillary electron micrograph taken in accordance with Example 6, and Fig. 6d is an injection of a capillary tube manufactured according to Example 7. Electron micrograph.
【表2】【Table 2】
參考表2的內容，可以確認在粒子成長層形成階段S60中，熱處理溫度越高，則毛細管之表面粗度值越增加的事實。並可以確認出現在實施例5及實施例7中的最理想毛細管表面粗度值0.2 μm及0.6 μm，其熱處理溫度為1450 ℃及1650 ℃。且如6a圖所示，可以確認在比較例3上的該毛細管幾乎不會形成凹凸部。With reference to the contents of Table 2, it can be confirmed that in the particle growth layer formation stage S60, the higher the heat treatment temperature, the more the surface roughness value of the capillary increases. It was confirmed that the optimum capillary surface roughness values of Examples 5 and 7 were 0.2 μm and 0.6 μm, and the heat treatment temperatures were 1450 ° C and 1650 ° C. Further, as shown in Fig. 6a, it was confirmed that the capillary in Comparative Example 3 hardly formed uneven portions.
以下，進一步具體比較說明以形成粒子成長層之實施例製作完成的打線接合用毛細管，語以未形成粒子成長層之比較例製作完成的打線接合用毛細管之間的使用壽命及接合黏著力。In the following, the capillary for wire bonding which has been produced by the embodiment in which the particle growth layer is formed will be described in more detail, and the service life and bonding adhesive force between the wire bonding capillary tubes which have been produced in the comparative example in which the particle growth layer is not formed will be described.
第7a圖及第7b圖為依據實施例1所製造的打線接合用毛細管之前端部以及接管的注射電子顯微鏡照片。則，第7a圖及第7b圖的打線接合用毛細管為經過粒子成長層形成階段所製造的打線接合用毛細管。另外，第8a圖及第8b圖為在該實施例1上省略粒子成長層形成階段中、所製造完成的打線接合用毛細管之前端部及T接管的注射電子顯微鏡照片。則，第8a圖及第8b圖的打線接合用毛細管為未形成粒子成長層的打線接合用毛細管。Fig. 7a and Fig. 7b are injection electron micrographs of the front end portion of the capillary for wire bonding and the nozzle according to Example 1. Then, the capillary for wire bonding of FIGS. 7a and 7b is a capillary for wire bonding which is produced through the stage of forming a particle growth layer. Further, Fig. 8a and Fig. 8b are injection electron micrographs of the end portion of the wire bonding capillary and the T pipe which are manufactured in the step of forming the particle growth layer in the first embodiment. Then, the capillary for wire bonding of Figs. 8a and 8b is a capillary for wire bonding in which a particle growth layer is not formed.
另外，第9a圖出示第7a圖及第7b圖之打線接合用毛細管和第8a圖及第8b圖之打線接合用毛細管的使用壽命，屬交換週期資料的一線圖。Further, Fig. 9a shows the service life of the wire bonding capillary of Figs. 7a and 7b and the capillary for wire bonding of Figs. 8a and 8b, which is a line graph of the exchange cycle data.
參考第9a圖內容，該第9a圖的垂直軸代表因發生不良而交換一次毛細管的打線接合次數(1 K ＝ 1000次)。另外，第9a圖之橫軸各代表第7a圖及第7b圖之已形成粒子成長層的毛細管、以及第8a圖及第8b圖之未形成粒子成長層的毛細管。Referring to Fig. 9a, the vertical axis of Fig. 9a represents the number of wire bonding times (1 K = 1000 times) in which the capillary is exchanged for the occurrence of a defect. Further, the horizontal axis of Fig. 9a represents the capillary in which the particle growth layer has been formed in Figs. 7a and 7b, and the capillary in which the particle growth layer is not formed in Figs. 8a and 8b.
依據第7a圖及第7b圖之實施例所製作完成的毛細管，約每2300 K會發生1次毛細管不良，而依據第8a圖及第8b圖之比較例所製作的毛細管，約每700 K會發生1次毛細管不良。藉此，可以確認具有已凹凸化的粒子成長層的毛細管，呈現出更優秀的耐舊性及耐磨性之事實。Capillary tubes produced according to the examples of Figs. 7a and 7b will have a capillary failure of about 2300 K, and the capillary made according to the comparative examples of Figs. 8a and 8b will be about 700 K. A capillary failure occurred once. Thereby, it is confirmed that the capillary having the roughened particle growth layer exhibits more excellent durability and wear resistance.
另外，第9b圖為顯示第7a圖及第7b圖之打線接合用毛細管和第8a圖及第8b圖之打線接合用毛細管進行黏著作業的銅線之黏著力的線圖。Further, Fig. 9b is a diagram showing the adhesion of the copper wire for bonding the capillary for the wire bonding in Figs. 7a and 7b and the capillary for bonding the wire bonding in Figs. 8a and 8b.
參考第9b圖所示，第9b圖的垂直軸代表銅基板使用銅線毛細管進行黏著作業時的黏著力(gf)。另外，第9b圖之橫軸各代表第7a圖及第7b圖之已形成粒子成長層的毛細管，以及和第8a圖及第8b圖之未形成粒子成長層的毛細管。Referring to Fig. 9b, the vertical axis of Fig. 9b represents the adhesion (gf) when the copper substrate is bonded using a copper capillary. Further, the horizontal axis of Fig. 9b represents the capillary in which the particle growth layer has been formed in Figs. 7a and 7b, and the capillary in which the particle growth layer is not formed in Figs. 8a and 8b.
藉此，可以確認使用第7a圖及第7b圖實施例之毛細管進行黏著作業的銅線黏著力為約120 gf，而使用第8a圖及第8b圖比較例的毛細管進行黏著作業的銅線黏著力為約80 gf，因此第7a圖及第7b圖實施例的銅線黏著力比第8a圖及第8b圖比較例高出許多。則，由於形成粒子成長層的毛細管具有接管表面之凹凸部，所以可以控制銅線接合時所發生的滑動現象，其結果很確實地將毛細管的上下運動力傳送給銅線而達到提高bonding 黏著力的效果。Thereby, it can be confirmed that the adhesion of the copper wire using the capillary of the embodiment of FIGS. 7a and 7b is about 120 gf, and the bonding of the copper wire of the comparative example of the 8a and 8b comparative examples is performed. The force is about 80 gf, so the copper wire adhesion of the examples of Figs. 7a and 7b is much higher than the comparative examples of Figs. 8a and 8b. Then, since the capillary forming the particle growth layer has the uneven portion on the surface of the nozzle, it is possible to control the sliding phenomenon occurring when the copper wire is joined, and as a result, the vertical movement force of the capillary is reliably transmitted to the copper wire to improve the bonding adhesion. Effect.
以下，透過本創作之實施例，說明更具體的內容。以下所述僅為舉例性，而非為限制性者。任何未脫離本創作之精神與範疇，而對其進行之等效修改或變更，均應包含於後附之申請專利範圍中。
Hereinafter, more specific contents will be described through the embodiments of the present creation. The following description is only illustrative, and not limiting. Any equivalent modifications or alterations to the spirit and scope of this creation shall be included in the scope of the appended patent application.
10．．．鋼模10. . . Steel mold
20．．．模具20. . . Mold
30．．．壓電素子30. . . Piezoelectric element
40．．．上衝床部40. . . Upper punching department
50．．．下衝床部50. . . Lower punching department
第1圖係說明本發明之打線接合用毛細管之製造方法的流程圖。
第2圖係本發明之打線接合用毛細管的製造方法當中，使用於成形階段上的成形裝備之示意圖。
第3圖係本發明之打線接合用毛細管的製造方法當中，形狀加工階段以前的打線接合用毛細管之形象照片。
第4圖係本發明之打線接合用毛細管的製造方法當中，形狀加工階段以後的打線接合用毛細管形象照片。
第5a圖及第5f圖係依據氧化鎳含量，將打線接合用毛細管之表面粗度值實施例和比較例當中的打線接合用毛細管前端進行比較的注射電子顯微鏡照片。
第6a圖及第6d圖係在粒子成長層形成階段中，依據熱處理溫度的變化，比較將表面粗度值實施例和比較例當中打線接合用毛細管前端部的注射電子顯微鏡照片。
第7a圖及第7b圖係依據已完成粒子成長層形成階段之後的實施例，打線接合用毛細管前端部及接管的相關注射電子顯微鏡照片。
第8a圖及第8b圖係依據尚未進行粒子成長層形成階段的比較例，打線接合用毛細管前端部及接管相關注射電子顯微鏡照片。
第9a圖係依據第7a圖及第7b圖的打線接合用毛細管和依據第8a圖及第8b圖的打線接合用毛細管之使用壽命相關線圖。
第9b圖係依據第7a圖及第7b圖的打線接合用毛細管和依據第8a圖及第8b圖的打線接合用毛細管所黏著的銅線黏著力相關線圖。
第10圖係從第7a圖及第7b圖的打線接合用毛細管上，自接管的一部表面去除粒子成長層後進行平面化的注射電子顯微鏡照片。
Fig. 1 is a flow chart showing a method of manufacturing the capillary for wire bonding of the present invention.
Fig. 2 is a schematic view showing a molding apparatus used in a forming stage in the method for producing a wire bonding capillary of the present invention.
Fig. 3 is a photograph showing the image of the capillary for wire bonding before the shape processing stage in the method for producing the wire bonding capillary of the present invention.
Fig. 4 is a capillary photograph of the wire bonding after the shape processing stage in the method for producing the wire bonding capillary of the present invention.
Fig. 5a and Fig. 5f are injection electron micrographs comparing the surface roughness values of the wire bonding capillary and the tip end of the wire bonding capillary in the comparative example according to the nickel oxide content.
Fig. 6a and Fig. 6d show an injection electron micrograph of the tip end portion of the wire bonding capillary in the surface roughness value examples and the comparative examples in the particle growth layer formation stage, in accordance with the change in the heat treatment temperature.
Fig. 7a and Fig. 7b are related electron micrographs of the tip end portion of the capillary joining and the nozzle according to the embodiment after the completion of the stage of forming the particle growth layer.
Fig. 8a and Fig. 8b are photographs of the capillary tip end portion and the nozzle-related injection electron micrograph according to a comparative example in which the particle growth layer formation stage has not yet been performed.
Fig. 9a is a line diagram relating to the service life of the wire bonding capillary according to Figs. 7a and 7b and the capillary for wire bonding according to Figs. 8a and 8b.
Fig. 9b is a line diagram showing the adhesion of the copper wire adhered to the wire bonding capillary according to Figs. 7a and 7b and the capillary for wire bonding according to Figs. 8a and 8b.
Fig. 10 is an injection electron micrograph showing the planarization of a particle growth layer from one surface of the nozzle from the capillary for wire bonding of Figs. 7a and 7b.
S10~S70．．．步驟S10~S70. . . step
Claims (13)
將氧化鋁(Al2 O3 )和氧化鎳(NiO)之混合粉末進行加熱後，製作完成鎳-氧化鋁(NiAl2 O4 )粉末的粉末製造階段;
在經該粉末製造階段所製造完成的粉末上進行加壓成形工序後，製造完成毛細管的成形階段;
在該毛細管成形體上進行加熱後，製造完成毛細管燒結體的熱處理階段;
為了呈現打線接合用毛細管的功能，在經熱處理階段所得到的毛細管燒結體上進行形狀加工的形狀加工階段; 以及
為了在經該形狀加工階段的毛細管之接管表面上形成凹凸形狀的凹凸部，針對毛細管之接管表面進行熱處理工程的粒子成長層形成階段。A method for manufacturing a copper wire bonding capillary, comprising the steps of:
After heating a mixed powder of aluminum oxide (Al 2 O 3 ) and nickel oxide (NiO), a powder production stage of completing a nickel-alumina (NiAl 2 O 4 ) powder is prepared;
After the pressure forming process is performed on the powder produced by the powder production stage, the forming stage of the capillary is completed;
After heating on the capillary formed body, a heat treatment stage in which the capillary sintered body is completed is manufactured;
In order to exhibit the function of the capillary for wire bonding, the shape processing stage of shape processing on the capillary sintered body obtained by the heat treatment stage; and the uneven portion for forming the uneven shape on the surface of the nozzle of the capillary passing through the shape processing stage, The surface of the capillary tube is subjected to a particle growth layer formation stage of the heat treatment process.
以180 ℃及220 ℃的溫度維持3小時及6小時的第1熱處理階段;
經10小時及15小時的時間將溫度調高至600 ℃的第2熱處理階段;以及
經5小時及8小時的時間將溫度調高至1500 ℃及1580 ℃之後，再以該溫度維持1小時及2小時的第3熱處理階段。The method for producing a copper wire bonding capillary according to claim 1, wherein the heat treatment stage comprises:
Maintaining a first heat treatment stage of 3 hours and 6 hours at a temperature of 180 ° C and 220 ° C;
The temperature was raised to a second heat treatment stage of 600 ° C over a period of 10 hours and 15 hours; and the temperature was raised to 1500 ° C and 1580 ° C over a period of 5 hours and 8 hours, and then maintained at this temperature for 1 hour and 2 hours of the third heat treatment stage.
A capillary for copper wire bonding manufactured by the method for producing a copper wire bonding method according to any one of claims 1 to 12, wherein the copper wire bonding capillary is manufactured.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100080875A KR101139018B1 (en) | 2010-08-20 | 2010-08-20 | Method for fabricating capillary for bonding copper wire and capillary for bonding copper wire by thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201209943A TW201209943A (en) | 2012-03-01 |
| TWI436438B true TWI436438B (en) | 2014-05-01 |
Family
ID=45839754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099131370A TWI436438B (en) | 2010-08-20 | 2010-09-16 | Method for fabricating capillary for bonding copper wire and capillary for bonding copper wire by thereof |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101139018B1 (en) |
| TW (1) | TWI436438B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI708296B (en) * | 2018-01-30 | 2020-10-21 | 日商新川股份有限公司 | Wire bonding device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI511826B (en) * | 2013-01-25 | 2015-12-11 | Toto Ltd | Welding needle |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100349512B1 (en) | 1999-08-28 | 2002-08-21 | 주식회사 페코 | Antistatic capillary or wedge |
| JP2005159057A (en) | 2003-11-26 | 2005-06-16 | Kyocera Corp | Wire bonding tool |
| WO2008005684A2 (en) * | 2006-07-03 | 2008-01-10 | Kulicke And Soffa Industries, Inc. | Bonding tool with improved finish |
-
2010
- 2010-08-20 KR KR1020100080875A patent/KR101139018B1/en active IP Right Grant
- 2010-09-16 TW TW099131370A patent/TWI436438B/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI708296B (en) * | 2018-01-30 | 2020-10-21 | 日商新川股份有限公司 | Wire bonding device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120017923A (en) | 2012-02-29 |
| TW201209943A (en) | 2012-03-01 |
| KR101139018B1 (en) | 2012-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI280954B (en) | Method for producing ceramic optical parts | |
| JP6225991B2 (en) | Metal polishing pad and manufacturing method thereof | |
| CN103990880B (en) | The nonmetallic materials of inierpeneirating network structure brazed seam and the method for welding of metal material can be formed | |
| TWI436438B (en) | Method for fabricating capillary for bonding copper wire and capillary for bonding copper wire by thereof | |
| TWI530361B (en) | Chemical mechanical polishing conditioner and associated methods | |
| CN104942262B (en) | Functional gradient die-casting die and manufacturing process thereof | |
| KR100932636B1 (en) | Method for producing alumina composite capillary | |
| CN103447535A (en) | Target manufacturing method | |
| JP2005187944A (en) | Wear-resistant mechanical component and method of producing the same | |
| CN102452838A (en) | Connecting method for stainless steel and zirconia ceramic and connecting piece prepared by same | |
| JP2012501851A5 (en) | ||
| JP6236314B2 (en) | Silicon carbide bonded body and method for manufacturing the same | |
| US8956484B2 (en) | Method for bonding zircon substrates | |
| KR101061941B1 (en) | Method for manufacturing tool bonded cubic boron nitride (CB) and cubic boron nitride (CB) tool using the same | |
| KR101141263B1 (en) | ADHESIVE MATERIALS OF WC-Fe BASED HARD METAL AND MANUFACTURING METHOD OF THE SAME | |
| KR101139019B1 (en) | Method for fabricating capillary for bonding wire and capillary for bonding wire by thereof | |
| CN102557705A (en) | Brass and silicon carbide ceramic composite piece and manufacturing method thereof | |
| KR100791222B1 (en) | Method for mamufacturing a transparent capillary for semiconductor wire bonding using injection molding and capillary for semiconductor wire bonding using thereof | |
| CN102557706A (en) | Composite part of tin bronze and silicon carbide ceramics and production method thereof | |
| KR101201259B1 (en) | Method for manufacturing cmp pad conditioner using bulk metallic glass | |
| CN102557704A (en) | Brass and silicon carbide ceramic composite member and manufacturing method thereof | |
| KR20100010159A (en) | Method of diffusion bonding with pressure applying transformation super plasticity and processing method of hip using the method of diffusion bonding | |
| CN102485696A (en) | Connection method of stainless steel and alumina ceramic, and produced connected piece | |
| JP3965422B2 (en) | Diamond pellet, manufacturing method thereof, and surface plate for grinding machine | |
| TWI547380B (en) | A multilayer article with bronze layer and stacked silicon carbide ceramic layer, and method for manufacturing same |