TWI434361B - Process monitor circuit element for monitoring manufacturing process - Google Patents

Description

Circuit component structure for process monitoring

The present invention relates to an integrated circuit process and an integrated circuit test structure, and more particularly to a circuit component structure for use in an advanced semiconductor process as a test circuit and process monitoring.

Due to the increasing importance of the variety of portable electronic products and their peripheral products such as communication, networking, and computers, and the development of these electronic products in the direction of versatility and high performance, semiconductor manufacturing processes It is constantly evolving toward a higher process evolution, and the high-density structure is the goal pursued by the industry. As a result, reliability testing of semiconductor wafers with higher density is becoming more important.

In order to achieve the reliability of testing semiconductor wafers, it is often necessary to place test circuits on the wafer to determine process parameters or variables that may cause defects in the semiconductor circuit. The test circuit based on the reliability of the test semiconductor wafer can be called a PCM-Process Control Monitor. Typically, a via chain is placed around the wafer or at a corner as a test for process monitoring. Circuit.

In the prior art, the pore chain is designed to have a rectangular appearance as shown in Fig. 1, and is mainly used for checking resistance value variation in DC testing. But for advanced semiconductor manufacturing technologies, such a chain of slabs will be significantly affected by tip discharge effects and RF coupling or crosstalk effects. For example, the rectangular hole chain shown in Figure 1 has the advantage of saving size, but for high-frequency signal testing (such as AC or RF signal testing), there are two such designs as shown in Figure 1. Non-ideal effect: that is, if the high-frequency signal passes through the right angle R, the high-frequency signal will be radiated into the air, causing the signal not to pass through the holes; secondly, between the two-stage chain or transmission line, there may be For example, the parasitic capacitance Cp causes the high frequency signal to pass through the parasitic capacitance Cp without passing through the holes.

Specifically, when the above-described alternating current or radio frequency test is performed, the signal will be radiated into the air via the right angle R or through the parasitic capacitance Cp, thereby causing an error in the evaluation of the via resistance.

Therefore, how to propose a circuit component structure that can be applied to DC test and can reduce the effect of tip discharge and RF coupling or crosstalk in AC or RF test to avoid the above-mentioned missing circuit component structure. The technical problems that all walks of life want to solve.

In view of the above disadvantages of the prior art, the present invention provides a circuit component structure for process monitoring, comprising: a first hole chain having a first front end point and a first end point; having a second front end point and a second end end And a second hole chain spaced apart from the first hole chain by a first gap, and the first front end point is adjacent to the second front end point, and the first end point is adjacent to the second end point; a first floating metal layer formed in the first gap between the first hole chain and the second hole chain, and not in contact with the first hole chain and the second hole chain; and bypassing the The first floating metal layer connects the first curved connection portion of the first front end point and the second front end point.

In another embodiment of the present invention, the circuit component structure for process monitoring further includes a third hole chain, a second floating metal layer, and a second curved connection portion, wherein the third hole chain has a third front end point And a third end point, and a second gap is spaced from the second hole chain, such that the second hole chain is between the first hole chain and the third hole chain, and the second front end point is a third front end point adjacent to the second end point adjacent to the third end point; a second floating metal layer formed in the second gap between the second hole chain and the third hole chain, and Not contacting the second chain of holes and the chain of third holes; and the second arcuate connection connects the second and third tail ends around the second floating metal layer.

In still another embodiment of the present invention, the width of the first gap is equal to the second gap. The width of the first gap may also be greater or smaller than the second gap.

Compared with the prior art, the invention can not only effectively avoid or reduce the edge parasitic capacitance Cp generated between the hole chains, avoid the high frequency signal passing through the parasitic capacitance Cp, and also reduce the tip discharge and the radio frequency coupling or crosstalk effect. The negative effect is to prevent the signal from being radiated into the air through the tip discharge, which improves the correct evaluation of the via resistance value and significantly improves the reliability of the semiconductor process test.

The other technical advantages of the present invention will be readily understood by those skilled in the art from this disclosure. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes may be made without departing from the spirit and scope of the invention.

It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. At the same time, the terms “first”, “second”, “third”, “fourth”, “above”, “before”, “tail” and “one” quoted in this specification are only For the sake of brevity, and not to limit the scope of the invention, the relative relationship changes or adjustments are considered to be within the scope of the invention.

Referring to Figure 2, there is shown a top view of a circuit component structure 200 for process monitoring in accordance with an exemplary embodiment of the present invention. As shown, the circuit component structure 200 can include: first, second, third, and fourth hole chains 202, 204, 206, 208; first, second, and third arcuate connections 203, 205, 207; and first, second, and Three floating metal layers 203a, 205a, 207a.

The first, second, third, and fourth hole chains 202, 204, 206, 208 are parallel to each other. For example, the second hole chain 204 is parallel to the first hole chain 202 in a linear direction; the third hole chain 206 is in a straight line direction. Parallel to the second hole chain 204; the fourth hole chain 208 is parallel to the third hole chain 206 in a linear direction.

In addition, as shown, the first hole chain 202 has a first front end point 202a and a first tail end point 202b, and the second hole chain 204 has a second front end point 204a and a second tail end point 204b, and the first A first gap 211 is defined between the two-hole chain 204 and the first hole chain 202, and the first front end point 202a is adjacent to the second front end point 204a, and the first tail end point 202b is opposite to the second tail end point 204b. The third hole chain 206 has a third front end point 206a and a third end end point 206b, and a second gap 212 is spaced between the third hole chain 206 and the second hole chain 204 to make the second hole The chain 204 is interposed between the first hole chain 202 and the third hole chain 206, and the second front end point 204a is adjacent to the third front end point 206a, and the second tail end point 204b is adjacent to the third tail end point 206b. The fourth hole chain 208 has a fourth front end point 208a and a fourth end end point 208b, and the fourth hole chain 208 and the third hole chain 206 are separated by a third gap 213, so that the third hole chain 206 is between the second hole chain 204 and the fourth hole chain 208, and the third front end point 206a is adjacent to the fourth front end point 208a, and the third end end point 206b is adjacent to the fourth tail end point 208b.

The circuit component structure for the process monitoring includes a first floating metal layer 203a formed in the first gap 211, that is, between the first hole chain 202 and the second hole chain 204, And not in contact with the first hole chain 202 and the second hole chain 204.

The first curved connecting portion 203 is formed of a circular arc metal for electrically connecting the first front end point 202a of the first hole chain 202 to the second front end point 204a of the second hole chain 204, and is wound around The first floating metal layer 203a passes. Similarly, as shown, the second, third, and fourth hole chains 204, 206, 208 may be spaced apart from each other by a suitable gap, and the gap between two adjacent hole chains need not be equal to the other two phases. Necessary for the gap between adjacent hole chains.

For example, a second gap 212 may be spaced between the second hole chain 204 and the third hole chain 206, and a second gap 212 between the second hole chain 204 and the third hole chain 206 may be Different from the first gap 211 between the first hole chain 202 and the second hole chain 204. The second floating metal layer 205a is formed in the second gap 212, that is, between the second hole chain 204 and the third hole chain 206, and is not associated with the second hole chain 204. The third chain of holes 206 are in contact with each other. The second curved connecting portion 205 is also formed of a circular arc metal, and the shape thereof may be different from the first curved connecting portion 203 for electrically connecting the second end point 204b of the second hole chain 204. To the third tail end 206b of the third hole chain 206, and bypassing the second floating metal layer 205a.

Similarly, the third curved connecting portion 207 can be used to electrically connect the third front end point 206a of the third hole chain 206 to the fourth front end point 208a of the fourth hole chain 208, and bypass the third floating Metal layer 207a.

It should be emphasized in this embodiment that the shape of the arcuate connecting portions is not limited, and only needs to be formed into a circular arc-shaped edge, and the main purpose is to avoid or reduce the signal passing through when conducting AC or RF testing. Sharp edges (such as the right angle R of Figure 1) are radiated into the air.

In addition, in the embodiment of the present invention, the input ground pad 201 and the output ground pad 209 may be further included as a ground end of the radio frequency (RF) test input signal and as a radio frequency (RF) test output. The ground of the signal. The first tail end 202b of the first hole chain 202 can be used as an input of a radio frequency (RF) test input signal, and the fourth hole chain 208 has a fourth tail end point 208b for use as a radio frequency (RF) test. The output of the output signal.

Referring to Figure 3, the composition and structure of the pore chain of the present invention will be described in a cross-sectional view of the pore chain. Illustrated by the first hole chain 202, the first hole chain 202 includes a plurality of first upper metal pieces 2020, a first lower metal piece 2021, and a first through hole 2022, wherein each of the first upper metal pieces 2020 and The first lower metal sheets 2021 are offset from each other, and the first upper metal sheet 2020 and the first lower metal sheet 2021 are electrically connected to each other through the first through holes 2022 to form a series structure. As shown in the figure, the first lower metal piece 2021 and the first through hole 2022 are formed in the dielectric layer 221, and the first lower metal piece 2021 can be formed by electroplating while forming a conductive line. The first via 2022 can be fabricated through a patterning process, such as electroplating or sputtering. Of course, the floating metal layer and the curved connecting portion described above can also be formed according to the prior art.

Similarly, the second hole chain includes a plurality of second upper metal pieces, a second lower metal piece, and a second through hole, wherein each of the second upper metal piece and the second lower metal piece are misaligned with each other The second through hole is electrically connected to the second upper metal piece and the second lower metal piece to form a series structure. The third hole chain includes a plurality of third upper metal pieces, a third lower metal piece, and a third through hole, wherein each of the third upper metal piece and the third lower metal piece are misaligned with each other, and each of the third through The hole electrically connects the third upper metal piece and the third lower metal piece to form a series structure (not shown). It should be understood that the metal sheets on the upper layer of each of the pore chains may be simultaneously formed, the through holes may be simultaneously formed, and the lower metal sheets may be simultaneously formed.

Referring to Figures 4A and 4B, a cross-sectional view of the circuit component structure 200 of the embodiment of the present invention taken along line 2-2 of Figure 2 is schematically depicted.

As shown in FIG. 4A, the first, second, third, and fourth hole chains 202, 204, 206, and 208 are formed on the substrate 220 (such as a germanium substrate or a printed circuit board), and are electrically connected through the through holes respectively. Lower metal sheet. For example, the first hole chain 202 is electrically connected to the first upper metal piece 2020 and the first lower metal piece 2021 by the first through hole 2022 to form a series structure. The second via link 204 is electrically connected to the second upper metal piece 2040 and the second lower metal piece 2041 by the second through hole 2042. The third hole chain 206 is electrically connected to the third upper layer metal by the third through hole 2062. The sheet 2060 and the third lower metal piece 2061 and the fourth hole chain 208 are electrically connected to the fourth upper metal piece 2080 and the fourth lower metal piece 2081 by the fourth through hole 2082.

Between the first hole chain 202 and the second hole chain 204, between the second hole chain 204 and the third hole chain 206, and between the third hole chain 206 and the fourth hole chain 208 The gap, the size of each gap is not necessarily the same, depending on the process or user needs.

In addition, a first floating metal layer 203a is disposed between the first hole chain 202 and the second hole chain 204, and is not in contact with the first hole chain 202 and the second hole chain 204. Similarly, a second floating metal layer 205a and a third floating metal may be disposed between the second hole chain 204 and the third hole chain 206, and between the third hole chain 206 and the fourth hole chain 208, respectively. Layer 207a.

More specifically, in the structure shown in FIG. 4A, the first floating metal layer 203a is disposed between the first lower metal piece 2021 and the second lower metal piece 2041. Similarly, the second floating metal layer 205a is also disposed between the second lower metal piece 2041 and the third lower metal piece 2061, and other conditions may be derived therefrom.

Or as shown in FIG. 4B, the first floating metal layer 203a is disposed between the first upper metal piece 2020 and the second upper metal piece 2040. Similarly, the second floating metal layer 205a is also disposed between the second upper metal piece 2040 and the third upper metal piece 2060.

It is emphasized in this embodiment that the arrangement positions of the floating metal layers are not limited, and only need to be disposed between two adjacent hole chains, and the main purpose is to avoid or reduce the relationship between the adjacent two hole chains. The edge parasitic capacitance Cp reduces RF coupling and causes crosstalk effects in AC or RF tests.

In addition, it should be noted that in the foregoing embodiments of the present invention, only the above two layers are used as an illustrative example. However, the present invention is not limited thereto, that is, the above embodiments of the present invention can be analogized and applied to have multiple layers. The situation.

In summary, the circuit component structure for process monitoring of the present invention can reduce tip discharge and RF coupling or crosstalk effects in AC or RF testing by avoiding high frequency signals passing through parasitic capacitance Cp and avoiding signals passing through the tip. Discharge and radiate into the air to improve the correct evaluation of the through-hole resistance value while avoiding crosstalk. Moreover, compared with the conventional rectangular circuit component structure, the circuit component structure for process monitoring of the present invention can make the evaluation of the via resistance value more correct in the AC or RF test, which may be caused by the user's judgment. A process parameter or variable in which a semiconductor circuit is defective, while improving the reliability of the semiconductor device and the process.

The above embodiments are merely illustrative of the principles and effects of the invention and are not intended to limit the invention. Modifications and variations of the above-described embodiments can be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the scope of the claims described below.

200. . . Circuit component structure

201. . . Input grounding gasket

202. . . First hole chain

202a. . . First front end point

202b. . . First end

203. . . First curved joint

203a. . . First floating metal layer

204. . . Second chain

204a. . . Second front end point

204b. . . Second tail endpoint

205. . . Second curved joint

205a. . . Second floating metal layer

206. . . Third hole chain

206a. . . Third front end point

206b. . . Third end

207. . . Third curved joint

207a. . . Third floating metal layer

208. . . Fourth hole chain

208a. . . Fourth front end point

208b. . . Fourth tail

209. . . Output grounding gasket

211. . . First gap

212. . . Second gap

213. . . Third gap

220. . . Substrate

221. . . Dielectric layer

2020. . . First upper metal sheet

2021. . . First lower metal sheet

2022. . . First through hole

2040. . . Second upper metal sheet

2041. . . Second lower metal sheet

2042. . . Second through hole

2060. . . Third upper metal sheet

2061. . . Third underlying metal sheet

2062. . . Third through hole

2080. . . Fourth upper metal sheet

2081. . . Fourth lower metal sheet

2082. . . Fourth through hole

2--2. . . Section line

R. . . Right angle

Cp. . . Parasitic capacitance

1 is a schematic view of a top view of a rectangular chain of holes as a test circuit in a conventional semiconductor process;

2 is a top view schematically showing the structure of a circuit component for process monitoring according to an embodiment of the present invention;

Figure 3 is a cross-sectional view showing the composition and structure of the pore chain of the present invention;

4A and 4B are schematic cross-sectional views showing the structure of a circuit component for process monitoring according to an embodiment of the present invention taken along line 2-2.

200. . . Circuit component structure

201. . . Input grounding gasket

202. . . First hole chain

202a. . . First front end point

202b. . . First end

203. . . First curved joint

203a. . . First floating metal layer

204. . . Second chain

204a. . . Second front end point

204b. . . Second tail endpoint

205. . . Second curved joint

205a. . . Second floating metal layer

206. . . Third hole chain

206a. . . Third front end point

206b. . . Third end

207. . . Third curved joint

207a. . . Third floating metal layer

208. . . Fourth hole chain

208a. . . Fourth front end point

208b. . . Fourth tail

209. . . Output grounding gasket

211. . . First gap

212. . . Second gap

213. . . Third gap

2--2. . . Section line

Claims (11)

A circuit component structure for process monitoring, comprising: a first hole chain having a first front end point and a first tail end point; and a second hole chain having a second front end point and a second end point, and The first hole chain is separated by a first gap, and the first front end point is adjacent to the second front end point, and the first tail end point is adjacent to the second tail end point; the first floating metal layer is formed on the first floating metal layer The first gap between the first hole chain and the second hole chain is not in contact with the first hole chain and the second hole chain; and the first curved connection portion bypasses the first A floating metal layer connects the first front end point and the second front end point. The circuit component structure for process monitoring according to claim 1, wherein the second hole chain is parallel to the first hole chain. The circuit component structure for process monitoring according to claim 2, wherein the second hole chain is parallel to the first hole chain in a linear direction. The circuit component structure for process monitoring according to claim 1, wherein the first hole chain comprises a plurality of first upper metal pieces, a first lower metal piece and a first through hole, wherein each of the holes The first upper metal piece and the first lower metal piece are offset from each other, and the first upper metal piece and the first lower metal piece are electrically connected by the first through holes to form a series structure. The circuit component structure for process monitoring according to claim 1, wherein the second hole chain comprises a plurality of second upper metal pieces, a second lower metal piece and a second through hole, wherein each of the The second upper metal piece and the second lower metal piece are offset from each other, and the second upper metal piece and the second lower metal piece are electrically connected by the second through holes to form a series structure. The circuit component structure for process monitoring according to claim 1, wherein the third hole chain has a third front end point and a third end end point, and is spaced from the second hole chain. a second gap, the second hole chain is between the first hole chain and the third hole chain, and the second front end point is adjacent to the third front end point, the second end point and the third end end a second floating metal layer is formed in the second gap between the second hole chain and the third hole chain, and is not in contact with the second hole chain and the third hole chain; And a second curved connecting portion connecting the second tail metal layer and the third tail end point by bypassing the second floating metal layer. The circuit component structure for process monitoring according to claim 6, wherein the third hole chain is parallel to the second hole chain. The circuit component structure for process monitoring according to claim 7, wherein the third hole chain is parallel to the second hole chain in a linear direction. The circuit component structure for process monitoring according to claim 6, wherein the third hole chain comprises a plurality of third upper metal pieces, a third lower metal piece and a third through hole, wherein each of the The third upper metal piece and the third lower metal piece are misaligned with each other, and the third upper metal piece and the third lower metal piece are electrically connected by the third through holes to form a series structure. The circuit component structure for process monitoring according to claim 6, wherein the width of the first gap is equal to the second gap. The circuit component structure for process monitoring according to claim 6, wherein the width of the first gap is greater or smaller than the second gap.