TWI429097B - Method for manufacturing a back-contact solar cell - Google Patents
Method for manufacturing a back-contact solar cell Download PDFInfo
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- TWI429097B TWI429097B TW100102752A TW100102752A TWI429097B TW I429097 B TWI429097 B TW I429097B TW 100102752 A TW100102752 A TW 100102752A TW 100102752 A TW100102752 A TW 100102752A TW I429097 B TWI429097 B TW I429097B
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims description 65
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000011049 filling Methods 0.000 claims description 18
- 238000007650 screen-printing Methods 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 12
- 229910052732 germanium Inorganic materials 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
本發明係關於一種太陽能電池的製造方法，尤其關於一種背接觸式太陽能電池的製造方法。The present invention relates to a method of fabricating a solar cell, and more particularly to a method of fabricating a back contact solar cell.
圖1顯示習知太陽能電池之剖面圖。如圖1所示，習知太陽能電池100包含有一矽晶基板110、一抗反射層120及一電極結構130。Figure 1 shows a cross-sectional view of a conventional solar cell. As shown in FIG. 1 , the conventional solar cell 100 includes a twin crystal substrate 110, an anti-reflection layer 120, and an electrode structure 130.
矽晶基板110可為一P型多晶矽基板，且於其一表面上摻雜N型雜質，例如磷或砷，使其擴散進入P型多晶矽基板，形成一N型雜質擴散區，使得矽晶基板110包含有互相連接之一N型區域111及一P型區域112，亦即前述N型雜質擴散區形成N型區域111；而矽晶基板110的其餘部分則形成P型區域112。抗反射層120可以包含有一氮化矽(Si3 N4 )層。電極結構130包含有第一電極131及第二電極132。第一電極131設於N型區域111的第一表面113上且接觸N型區域111，第二電極132設於P型區域112的第二表面114上且接觸P型區域112。而第一電極131與第二電極132可以透過一負載150互相電連接，以形成一電流迴路，供給負載150電能。The twinned substrate 110 can be a P-type polycrystalline germanium substrate, and is doped with an N-type impurity such as phosphorus or arsenic on one surface thereof to diffuse into the P-type polycrystalline germanium substrate to form an N-type impurity diffusion region, so that the twinned substrate 110 includes an N-type region 111 and a P-type region 112 interconnected, that is, the N-type impurity diffusion region forms an N-type region 111; and the remaining portion of the twin crystal substrate 110 forms a P-type region 112. The anti-reflective layer 120 may comprise a layer of tantalum nitride (Si 3 N 4 ). The electrode structure 130 includes a first electrode 131 and a second electrode 132. The first electrode 131 is disposed on the first surface 113 of the N-type region 111 and contacts the N-type region 111. The second electrode 132 is disposed on the second surface 114 of the P-type region 112 and contacts the P-type region 112. The first electrode 131 and the second electrode 132 can be electrically connected to each other through a load 150 to form a current loop for supplying power to the load 150.
圖2A顯示習知形成有第一電極的矽晶基板的俯視圖。圖2B顯示習知形成有第二電極的矽晶基板的仰視圖。如圖2A所示，第一電極131包含有手指電極131a及匯流排條配線131b。如圖2B所示，第二電極132包含有背面場電極132a及匯流排條配線132b。手指電極131a為細長結構分佈於太陽能電池100的大致上整個第一表面113，用以收集電流，減少第一表面113上的電子移動至第一電極131的距離。背面場電極132a，由沉積一層鋁膠所形成，用以降低少數載流子在背面復合的概率。2A shows a top view of a conventional twinned substrate formed with a first electrode. 2B shows a bottom view of a conventional twinned substrate formed with a second electrode. As shown in FIG. 2A, the first electrode 131 includes a finger electrode 131a and a bus bar wiring 131b. As shown in FIG. 2B, the second electrode 132 includes a back surface field electrode 132a and a bus bar line 132b. The finger electrode 131a is distributed in an elongated structure over substantially the entire first surface 113 of the solar cell 100 for collecting current, reducing the distance that electrons on the first surface 113 move to the first electrode 131. The back field electrode 132a is formed by depositing a layer of aluminum paste to reduce the probability of minority carriers recombining on the back side.
此外，太陽能電池100更包含有一分離溝140，位在距離矽晶基板110之邊緣的一預定距離處，分離溝140的開口位於接收陽光的表面，並向矽晶基板110內部延伸，用以避免電子e2從N型區域111經過矽晶基板110的側邊而流到第二電極132。In addition, the solar cell 100 further includes a separation trench 140 located at a predetermined distance from the edge of the twin crystal substrate 110. The opening of the separation trench 140 is located on the surface receiving the sunlight and extends toward the inside of the twin crystal substrate 110 to avoid The electrons e2 flow from the N-type region 111 through the side of the twin crystal substrate 110 to the second electrode 132.
由於第一表面113為受光面，其上形成有不透光的第一電極131，會減少電流的產生。因而發展出一種金屬貫穿孔(Metal Wrap Through，MWT)技術，其係將第一電極131及第二電極132皆形成於第二表面114。然而，習知金屬貫穿孔太陽能電池的製程中，因矽晶基板110形成有多個貫穿孔，因此需要額外增加一道利用網印進行填孔膠之印刷的程序，而多了一道網印的製程，不僅增加網印設備的額外支出，也必須修改網印之印台(table)的結構以避免沾膠。Since the first surface 113 is a light receiving surface, the first electrode 131 that is opaque is formed thereon, which reduces the generation of current. Thus, a Metal Wrap Through (MWT) technique is developed in which the first electrode 131 and the second electrode 132 are both formed on the second surface 114. However, in the process of the conventional metal through-hole solar cell, since the twinned substrate 110 is formed with a plurality of through holes, an additional procedure for printing the hole-filling glue by screen printing is required, and a screen printing process is added. Not only does it increase the extra expenditure of the screen printing equipment, but also the structure of the screen printing table must be modified to avoid sticking.
本發明一實施例之目的在於提供一種能夠簡化製程的太陽能電池製造方法。一實施例之目的在於提供一種能夠少手指電極與N型區域間的接觸電阻的太陽能電池製造方法。It is an object of an embodiment of the present invention to provide a method of fabricating a solar cell that simplifies the process. An object of an embodiment is to provide a solar cell manufacturing method capable of reducing contact resistance between a finger electrode and an N-type region.
依據本發明一實施例，提供一種太陽能電池製造方法其包含以下步驟。提供具有至少一貫穿孔的一第一型半導體基板，且第一型半導體基板更具有一第一表面及一第二表面，第二表面相對於第一表面，而該至少一貫穿孔延伸於第一表面及第二表面間。將多數的第二型雜質，摻雜於第一型半導體基板的第一表面上。將一第一導電膠塗布於第一型半導體基板的第一表面之即將形成一第一電極之一手指電極的區域，同時將第一導電膠填充於該至少一些貫穿孔內，藉以形成第一電極的手指電極及一填充電極。將一第二導電膠塗布於第一型半導體基板的第二表面上，藉以形成第一電極之一第一匯流排條配線以及一第二電極之一第二匯流排條配線，其中第一匯流排條配線電連接填充電極。將一第三導電膠塗布於第一型半導體基板的第二表面上，藉以形成第二電極之一背面場電極。According to an embodiment of the invention, a solar cell manufacturing method is provided which comprises the following steps. Providing a first type semiconductor substrate having at least a uniform via, and the first type semiconductor substrate further has a first surface and a second surface, the second surface being opposite to the first surface, and the at least consistent perforation extending to the first surface And between the second surface. A plurality of second type impurities are doped on the first surface of the first type semiconductor substrate. Applying a first conductive paste to a first surface of the first type semiconductor substrate to form a region of one of the first electrode electrodes, and filling the first conductive paste in the at least some through holes, thereby forming a first a finger electrode of the electrode and a filling electrode. Applying a second conductive paste on the second surface of the first type semiconductor substrate, thereby forming one of the first electrode and the second bus bar, wherein the first bus The row wiring is electrically connected to the filling electrode. A third conductive paste is coated on the second surface of the first type semiconductor substrate to form a back surface field electrode of the second electrode.
於一實施例中，太陽能電池製造方法還可以包含有形成一抗反射層於第一型半導體基板的第一表面上。於一實施例中，太陽能電池製造方法還可以包含有去除即將形成第一電極之手指電極的區域上的抗反射層，以形成至少一凹槽，且較佳的情況是前述形成第一電極的該手指電極及一填充電極的步驟包含：以網印方式同時將第一導電膠填充於至少一凹槽及至少一貫穿孔中。In an embodiment, the solar cell manufacturing method may further include forming an anti-reflection layer on the first surface of the first type semiconductor substrate. In an embodiment, the solar cell manufacturing method may further include an anti-reflection layer on the region where the finger electrode of the first electrode is to be formed to form at least one groove, and preferably the foregoing first electrode is formed. The step of the finger electrode and the filling electrode comprises: simultaneously filling the first conductive paste in at least one groove and at least the consistent perforation by screen printing.
於一實施例中，太陽能電池製造方法還可以包含利用一蝕刻液蝕刻第一型半導體基板的第一表面，使第一表面粗糙化。In an embodiment, the solar cell manufacturing method may further include etching the first surface of the first type semiconductor substrate with an etching solution to roughen the first surface.
於一實施例中，利用網印方式來形成第一電極之第一匯流排條配線以及第二電極之第二匯流排條配線。於一實施例中，利用網印方式來形成第二電極之一背面場電極。In one embodiment, the first bus bar wiring of the first electrode and the second bus bar wiring of the second electrode are formed by a screen printing method. In one embodiment, the back surface field electrode of one of the second electrodes is formed by screen printing.
於一實施例中第一導電膠可以包含一銀膠。於一實施例中第二導電膠可以包含一銀膠。於一實施例中第三導電膠可以包含一鋁膠。In an embodiment, the first conductive paste may comprise a silver paste. In an embodiment, the second conductive paste may comprise a silver paste. In an embodiment, the third conductive paste may comprise an aluminum paste.
依據本發明一實施例，在形成手指電極的同時，將第一導電膠填充於貫穿孔，以形成填充電極，因此相較於習知製造金屬貫穿孔太陽能電池的技術，能夠簡化製造的程序。According to an embodiment of the present invention, the first conductive paste is filled in the through holes while forming the finger electrodes to form the filling electrodes, so that the manufacturing process can be simplified compared to the conventional technique of manufacturing the metal through-hole solar cells.
本發明的其他目的和優點可以從本發明所揭露的技術特徵中得到進一步的了解。為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉實施例並配合所附圖式，作詳細說明如下。Other objects and advantages of the present invention will become apparent from the technical features disclosed herein. The above and other objects, features, and advantages of the invention will be apparent from
圖3A至3B顯示依據本發明一實施例之背接觸式太陽能電池製造方法的流程圖。圖4A至4J顯示依據本發明一實施例之背接觸式太陽能電池製造方法之各步驟的剖面示意圖。如圖3A至3B及圖4A至4J所示，背接觸式太陽能電池的製造方法包含以下步驟。3A through 3B are flow charts showing a method of fabricating a back contact solar cell in accordance with an embodiment of the present invention. 4A through 4J are cross-sectional views showing various steps of a method of fabricating a back contact solar cell in accordance with an embodiment of the present invention. As shown in FIGS. 3A to 3B and FIGS. 4A to 4J, the method of manufacturing a back contact solar cell includes the following steps.
如圖4A所示，步驟S02：提供一P型多晶矽基板210，其具有一第一表面213及相對於第一表面213的一第二表面214，並利用雷射對P型多晶矽基板210進行鑽孔，形成多個貫穿P型多晶矽基板210並從第一表面213延伸至第二表面214的貫穿孔215。圖5顯示圖4A之P型多晶矽基板的俯視圖。圖5顯示形成有多個貫穿孔215後之P型多晶矽基板210的第一表面213。As shown in FIG. 4A, step S02: providing a P-type polycrystalline germanium substrate 210 having a first surface 213 and a second surface 214 opposite to the first surface 213, and drilling the P-type polycrystalline germanium substrate 210 with a laser. The holes form a plurality of through holes 215 that extend through the P-type polysilicon substrate 210 and extend from the first surface 213 to the second surface 214. Figure 5 shows a top view of the P-type polycrystalline germanium substrate of Figure 4A. FIG. 5 shows the first surface 213 of the P-type polysilicon substrate 210 after the plurality of through holes 215 are formed.
如圖4B所示，步驟S04：利用蝕刻液清洗或者蝕刻P型多晶矽基板210的第一表面213，使P型多晶矽基板210之第一表面213粗糙化，以降低太陽光的反射。As shown in FIG. 4B, step S04: cleaning or etching the first surface 213 of the P-type polycrystalline silicon substrate 210 with an etching solution to roughen the first surface 213 of the P-type polycrystalline silicon substrate 210 to reduce reflection of sunlight.
如圖4C所示，步驟S06：將N型之多數的第一雜質，摻雜於P型多晶矽基板210的第一表面213上。於一實施例中，可以利用爐管擴散法或者網印、旋塗或噴霧法，於第一表面213上摻雜N型雜質，N型雜質會擴散進入P型多晶矽基板210，形成一N型雜質擴散區，以使P型多晶矽基板210具有N型區域211及P型區域212。於一實施例中，第一雜質可以為磷雜質，並且是在溫度約800℃至約820℃下，利用三氯氧磷(POCl3 )來對P型多晶矽基板210進行磷雜質摻雜。As shown in FIG. 4C, step S06: a plurality of N-type first impurities are doped on the first surface 213 of the P-type polysilicon substrate 210. In an embodiment, the first surface 213 may be doped with an N-type impurity by a furnace tube diffusion method or a screen printing, spin coating or spray method, and the N-type impurity may diffuse into the P-type polycrystalline substrate 210 to form an N-type. The impurity diffusion region is such that the P-type polysilicon substrate 210 has an N-type region 211 and a P-type region 212. In one embodiment, the first impurity may be a phosphorus impurity, and the phosphorus impurity doping is performed on the P-type polycrystalline germanium substrate 210 by using phosphorus oxychloride (POCl 3 ) at a temperature of about 800 ° C to about 820 ° C.
如圖4D所示，步驟S08：對P型多晶矽基板210的第一表面213及第二表面214進行去除氧化層蝕刻，以去除於磷擴散步驟(步驟S06)中被形成在P型多晶矽基板210之第一表面213、第二表面214以及側邊的磷矽玻璃(Phosphorous Silicate Glass，PSG)結構216。As shown in FIG. 4D, step S08: performing a deoxidation layer etching on the first surface 213 and the second surface 214 of the P-type polysilicon substrate 210 to be removed on the P-type polysilicon substrate 210 in the phosphorus diffusion step (step S06). The first surface 213, the second surface 214, and the side Phosphorous Silicate Glass (PSG) structure 216.
如圖4E所示，步驟S10：形成一抗反射層220於P型多晶矽基板210的第一表面213上。較佳的情況是，抗反射層220的一部分會形成於貫穿孔215的壁面及第二表面214之一部分。As shown in FIG. 4E, step S10: forming an anti-reflection layer 220 on the first surface 213 of the P-type polysilicon substrate 210. Preferably, a portion of the anti-reflective layer 220 is formed on a wall surface of the through hole 215 and a portion of the second surface 214.
如圖4F所示，步驟S12：利用雷射剝離法(laser ablation)去除即將形成第一電極231之手指電極231a(請參照圖4G)的區域上的抗反射層220，形成多個凹槽221。As shown in FIG. 4F, in step S12, the anti-reflection layer 220 on the region where the finger electrode 231a of the first electrode 231 is to be formed (please refer to FIG. 4G) is removed by laser ablation to form a plurality of grooves 221 .
如圖4G所示，步驟S14：利用網印(printing)方式，將第一導電膠印刷於P型多晶矽基板210的第一表面213上，並填充該些凹槽221及該些貫穿孔215，以形成第一電極231之手指電極231a以及填充電極231c。於本實施例中，以網印方式同時將第一導電膠填充於該些凹槽221及該些貫穿孔215中，因此僅需利用一道網印製程即可形成第一電極231之手指電極231a以及填充電極231c。As shown in FIG. 4G, in step S14, the first conductive paste is printed on the first surface 213 of the P-type polysilicon substrate 210 by using a printing method, and the recesses 221 and the through holes 215 are filled. The finger electrode 231a of the first electrode 231 and the filling electrode 231c are formed. In this embodiment, the first conductive paste is simultaneously filled in the recesses 221 and the through holes 215 by screen printing, so that the finger electrodes 231a of the first electrodes 231 can be formed by only one screen printing process. And filling electrode 231c.
於一實施例，雖然可以不形成凹槽221，僅以網印方式同時形成位於抗反射層220上的手指電極231a及填充電極231c。但形成凹槽221的好處為能夠使第一導電膠更進一步深入貫穿孔215內，以最簡化的方式說明其原因如下。在不形成凹槽221的情況下，相對於手指電極231a，還需要使填充電極231c的第一導電膠被填充於貫穿孔215內的深度大致上為P型多晶矽基板210的厚度H加上抗反射層220的厚度h。在形成有凹槽221的情況下，相對於手指電極231a，還需要使填充電極231c的第一導電膠被填充於貫穿孔215內的深度大致上能夠被減少至P型多晶矽基板210的厚度H。In one embodiment, although the recess 221 may not be formed, the finger electrode 231a and the filling electrode 231c on the anti-reflection layer 220 are simultaneously formed only by screen printing. However, the advantage of forming the recess 221 is that the first conductive paste can be further penetrated into the through hole 215, and the reason for this is explained in the most simplified manner as follows. In the case where the recess 221 is not formed, it is also required that the depth of the first conductive paste filling the electrode 231c to be filled in the through hole 215 is substantially the thickness H of the P-type polysilicon substrate 210 with respect to the finger electrode 231a. The thickness h of the reflective layer 220. In the case where the recess 221 is formed, the depth at which the first conductive paste filling the electrode 231c is filled in the through hole 215 can be substantially reduced to the thickness H of the P-type polycrystalline silicon substrate 210 with respect to the finger electrode 231a. .
此外，於習知技術中，是將第一導電膠直接形成於抗反射層120上，並藉由後續之燒結處理，使第一導電膠被燒結後穿透抗反射層120而接觸至N型區域211。相對於此，由於手指電極231a位於凹槽221內，能夠直接接觸N型區域211，在燒結處理時第一導電膠不需要穿透抗反射層220，相對於習知技術，可以減少手指電極231a與N型區域211間的接觸電阻。於一實施例中，第一導電膠可以為銀膠。In addition, in the prior art, the first conductive paste is directly formed on the anti-reflective layer 120, and the first conductive paste is sintered and penetrates the anti-reflective layer 120 to contact the N-type by subsequent sintering treatment. Area 211. In contrast, since the finger electrode 231a is located in the recess 221, the N-type region 211 can be directly contacted, and the first conductive paste does not need to penetrate the anti-reflection layer 220 during the sintering process, and the finger electrode 231a can be reduced compared to the prior art. Contact resistance with the N-type region 211. In an embodiment, the first conductive paste may be a silver paste.
如圖4H所示，步驟S16：利用網印(printing)方式，將第二導電膠印刷於P型多晶矽基板210的第二表面214上，以形成第一電極231之匯流排條配線231b以及第二電極232之匯流排條配線232b，其中(至少於燒結處理後)匯流排條配線231b能夠接觸填充電極231c，以使手指電極231a電連接匯流排條配線231b。較佳的情況是，匯流排條配線231b形成於第二表面214上之前述抗反射層220的部分上。於一實施例中，第二導電膠可以為銀膠。As shown in FIG. 4H, step S16: printing a second conductive paste on the second surface 214 of the P-type polysilicon substrate 210 by using a printing method to form the bus bar wiring 231b of the first electrode 231 and the first The bus bar wiring 232b of the two electrodes 232, wherein (at least after the sintering process), the bus bar wiring 231b can contact the filling electrode 231c so that the finger electrode 231a is electrically connected to the bus bar wiring 231b. Preferably, the bus bar wiring 231b is formed on a portion of the anti-reflection layer 220 on the second surface 214. In an embodiment, the second conductive paste may be a silver paste.
如圖4I所示，步驟18：利用網印方式，將第三導電膠印刷於P型多晶矽基板210的第二表面214上，以形成第二電極232之背面場電極232a。於一實施例中，背面場電極232a之至少一部分位於匯流排條配線232b之至少一部分上。於一實施例中，第三導電膠可以為鋁膠。As shown in FIG. 4I, step 18: printing a third conductive paste on the second surface 214 of the P-type polysilicon substrate 210 by screen printing to form the back surface field electrode 232a of the second electrode 232. In one embodiment, at least a portion of the back field electrode 232a is located on at least a portion of the bus bar wiring 232b. In an embodiment, the third conductive paste may be an aluminum paste.
如圖4J所示，步驟20：使經過步驟18後的P型多晶矽基板210進行燒結處理，並利用雷射形成至少一分離溝240，分離溝240從P型多晶矽基板210的第二表面214向第一表面213延伸，用以使N型區域211及P型區域212間在P型多晶矽基板210中大致上呈無電性短路狀態(no short circuit)。如此，即可形成第一電極231之匯流排條配線231b以及第二電極232之匯流排條配線232b皆位於第二表面214的背接觸式太陽能電池200。As shown in FIG. 4J, in step 20, the P-type polycrystalline silicon substrate 210 after the step 18 is subjected to sintering treatment, and at least one separation trench 240 is formed by laser, and the separation trench 240 is formed from the second surface 214 of the P-type polycrystalline silicon substrate 210. The first surface 213 extends to substantially eliminate a no short circuit between the N-type region 211 and the P-type region 212 in the P-type polysilicon substrate 210. Thus, the bus bar wiring 231b of the first electrode 231 and the bus bar wiring 232b of the second electrode 232 are formed on the back contact solar cell 200 of the second surface 214.
於一實施例中，在形成手指電極231a的同時，將第一導電膠填充於貫穿孔215，以形成填充電極231c，因此相較於習知製造金屬貫穿孔太陽能電池的技術能夠減少僅將第一導電膠填充於貫穿孔215的步驟。於一實施例中，形成有凹槽221，並同時以網印方式同時將第一導電膠填充於該些凹槽221及該些貫穿孔215中，能夠使第一導電膠更進一步深入貫穿孔215內。於一實施例中，由於手指電極231a的第一導電膠在燒結處理前，已接觸至N型區域211，能夠少手指電極231a與N型區域211間的接觸電阻。In one embodiment, while the finger electrode 231a is formed, the first conductive paste is filled in the through hole 215 to form the filling electrode 231c. Therefore, the technology for manufacturing a metal through-hole solar cell can be reduced only by the prior art. A step of filling a conductive paste in the through hole 215. In one embodiment, the recess 221 is formed, and at the same time, the first conductive paste is simultaneously filled in the recesses 221 and the through holes 215 by screen printing, so that the first conductive paste can further penetrate the through holes. Within 215. In one embodiment, since the first conductive paste of the finger electrode 231a has contacted the N-type region 211 before the sintering process, the contact resistance between the finger electrode 231a and the N-type region 211 can be reduced.
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。另外，本發明的任一實施例或申請專利範圍不須達成本發明所揭露之全部目的或優點或特點。此外，摘要部分和標題僅是用來輔助專利文件搜尋之用，並非用來限制本發明之權利範圍。While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. In addition, any of the objects or advantages or features of the present invention are not required to be achieved by any embodiment or application of the invention. In addition, the abstract sections and headings are only used to assist in the search of patent documents and are not intended to limit the scope of the invention.
100．．．太陽能電池100. . . Solar battery
110．．．矽晶基板110. . . Twin crystal substrate
111．．．N型區域111. . . N-type area
112．．．P型區域112. . . P-type area
113．．．第一表面113. . . First surface
114．．．第二表面114. . . Second surface
120．．．抗反射層120. . . Antireflection layer
130．．．電極結構130. . . Electrode structure
131．．．第一電極131. . . First electrode
131a．．．手指電極131a. . . Finger electrode
131b．．．匯流排條配線131b. . . Bus bar wiring
132．．．第二電極132. . . Second electrode
132a．．．背面場電極132a. . . Back field electrode
132b．．．匯流排條配線132b. . . Bus bar wiring
140．．．分離溝140. . . Separation ditch
150．．．負載150. . . load
200．．．太陽能電池200. . . Solar battery
210．．．P型多晶矽基板210. . . P-type polycrystalline germanium substrate
211．．．N型區域211. . . N-type area
212．．．P型區域212. . . P-type area
213．．．第一表面213. . . First surface
214．．．第二表面214. . . Second surface
215．．．貫穿孔215. . . Through hole
216．．．磷矽玻璃結構216. . . Phosphorus glass structure
220．．．抗反射層220. . . Antireflection layer
221．．．凹槽221. . . Groove
231．．．第一電極231. . . First electrode
231a．．．手指電極231a. . . Finger electrode
231b．．．匯流排條配線231b. . . Bus bar wiring
231c．．．填充電極231c. . . Filler electrode
232．．．第二電極232. . . Second electrode
232a．．．背面場電極232a. . . Back field electrode
232b．．．匯流排條配線232b. . . Bus bar wiring
240．．．分離溝240. . . Separation ditch
圖1顯示習知太陽能電池之剖面圖。Figure 1 shows a cross-sectional view of a conventional solar cell.
圖2A顯示習知形成有第一電極的矽晶基板的俯視圖。2A shows a top view of a conventional twinned substrate formed with a first electrode.
圖2B顯示習知形成有第二電極的矽晶基板的仰視圖。2B shows a bottom view of a conventional twinned substrate formed with a second electrode.
圖3A至3B顯示依據本發明一實施例之背接觸式太陽能電池製造方法的流程圖。3A through 3B are flow charts showing a method of fabricating a back contact solar cell in accordance with an embodiment of the present invention.
圖4A至4J顯示依據本發明一實施例之背接觸式太陽能電池製造方法之各步驟的剖面示意圖。4A through 4J are cross-sectional views showing various steps of a method of fabricating a back contact solar cell in accordance with an embodiment of the present invention.
圖5顯示圖4A之P型多晶矽基板的俯視圖。Figure 5 shows a top view of the P-type polycrystalline germanium substrate of Figure 4A.
210．．．P型多晶矽基板210. . . P-type polycrystalline germanium substrate
211．．．N型區域211. . . N-type area
212．．．P型區域212. . . P-type area
213．．．第一表面213. . . First surface
214．．．第二表面214. . . Second surface
220．．．抗反射層220. . . Antireflection layer
231a．．．手指電極231a. . . Finger electrode
231c．．．填充電極231c. . . Filler electrode
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