TWI427175B - Anode plate and sputtering apparatus including the same - Google Patents

Description

Anode plate and sputtering device including the same

The present invention relates to an anode plate, and more particularly to an anode plate of a sputtering apparatus.

Diamond-like carbon (DLC) has excellent properties similar to diamonds such as high hardness, low friction coefficient, high wear resistance and high chemical stability. Compared with diamond film, diamond-like carbon film can be used at low temperature. Large-area film formation, which has good application prospects in the fields of molds, tools, bearings, and stamping dies. Therefore, it has caused widespread concern and research for 20 years.

The DLC film is generally prepared by a sputtering method. Referring to the first figure, a device for DC-sputtering a DLC film includes a vacuum discharge chamber 10, a target 11, an anode plate 12, and a vacuum pump 14. When sputtering, the substrate 13 is placed on the anode plate 12, a vacuum pump 14 with the discharge chamber 10 evacuated to a vacuum of 10 ^- for ² Pascals (Pa), where again into the pressure is 10 ~ 10 ^{- 2} Pa of The inert gas, commonly used as argon, applies a high pressure between the target 11 (cathode) and the substrate 13 (anode) to free the inert gas to produce an inert gas plasma. Since the target 11 has a lower voltage, the gas positive ions move toward the target 11 and strike the target 11, and the atoms of the target 11 fall off into the plasma and finally deposit on the surface of the substrate 13 on the anode plate 12.

The DLC film layer has strong internal stress, and the most important factor causing excessive stress in the DLC film layer is that the thermal expansion coefficient between the substrate and the DLC film layer is too different. For example, the thermal expansion coefficient of a steel substrate is about 10 ^{- 6} per degree (K ^{- 1} ), while DLC is a ceramic material with a low expansion coefficient of about 10 ^{- 9} K ^{- 1} , and the expansion coefficients of the two are a thousand times different. . Therefore, when the coating is lowered from high temperature to room temperature, the steel substrate shrinks rapidly and the DLC film shrinks slowly, causing a large internal stress in the DLC film layer, and the DLC film layer is easily broken and falls off.

In the conventional sputtering apparatus, the substrate is placed directly on the anode plate. Referring to the second drawing, in this manner, the DLC film layer 22 is formed on the surface of the substrate 20, and the cladding portion 222 is formed on the side. Since the DLC film layer has strong internal stress, the structure of the covering portion 222 is curved, the internal stress is larger, and the crack is more likely to occur and fall off.

In view of the above, it is necessary to provide an anode plate which can produce a DLC film layer which is not easily peeled off at the edge, and a sputtering device including the DLC film layer of the anode plate.

An anode plate comprising a substrate and a baffle disposed on the substrate for abutting against a side of the substrate to be sputtered, and the top of the baffle is raised above the top of the substrate.

A sputtering device for sputtering a diamond-like film, comprising a vacuum discharge chamber and a target and an anode plate disposed in the vacuum discharge chamber, comprising a substrate and a baffle, the baffle being disposed on the substrate, Adhering to the side of the substrate to be sputtered, and the top of the baffle is raised above the top of the substrate.

When the substrate is placed on the anode plate for sputtering, the baffle prevents the formation of the covering structure, and the edge portion of the finally obtained DLC film layer is not easily peeled off due to cracking.

Referring to the third embodiment, the anode plate 300 of the first embodiment includes a substrate 30 and a baffle 32. The substrate 30 includes an upper surface 302. The baffle 32 is disposed on the upper surface 302 when the substrate 34 to be sputtered is placed on the upper surface. When the 302 is over, the baffle 32 is in close contact with the side of the substrate 34, and the thickness of the baffle 32 is larger than the substrate 34, so that the top of the baffle 32 is higher than the top of the substrate 34. Preferably, the top of the baffle 32 is higher than the base. The top of the material 34 is about 1 to 10 microns.

The working principle of the embodiment will be described in detail below. Referring to the fourth figure, when the DLC film layer is sputtered on the inner surface of the concave substrate 31, since the sputtering itself is affected by the multi-scattering direction of the sputtering atoms, continuous and uniform coverage is not easily obtained. (Conformal) DLC film, filling phenomenon occurs, forming the structure shown in the fourth figure, the DLC film layer 331 is formed on the side surface 311, the DLC film layer 312 is formed on the bottom surface 312, the DLC film layer 331 and the DLC are formed. The film layers 332 intersect to form a packing area 333. Since the film layer obtained by sputtering has discontinuous characteristics, the packing area 333 is easily separated, so that the DLC film layer 331 and the DLC film layer 332 are not peeled off.

In this embodiment, by using the sputtering property, the baffle 32 is closely attached to the side surface of the substrate 34, and a structure similar to that shown in the fourth figure is formed during sputtering. After the sputtering is completed, the substrate and the baffle are separated, and then the structure is obtained. As shown in the fifth figure, the DLC film layer 36 is formed on the substrate 34, and the side surface of the substrate 34 has no coating structure, and the DLC film layer at the edge of the substrate 34 is not easily peeled off.

Referring to the sixth drawing, which is a schematic view of the second embodiment of the anode plate, the anode plate 400 of the present embodiment is different from the anode plate 300 of the foregoing embodiment in that it further includes a fixing plate 46 and a spring 48. The mounting plate 46 is secured to the surface 402 and is disposed adjacent the edge of the substrate 40. The baffle 42 is disposed between the fixed plates 46. The spring 48 connects the fixing plate 46 and the baffle 42 so that the baffle 42 abuts against the side of the substrate 44.

Referring to the seventh embodiment, which is a schematic view of a third embodiment of the anode plate, the embodiment is similar to the second embodiment except that the spring 58 is replaced by a screw 58 which is provided with a screw hole matching the screw 58. 562. The screw 58 cooperates with the screw hole to achieve the effect that the baffle 52 is in close contact with the side surface of the substrate 54.

Referring to the eighth embodiment, a schematic view of the anode plate of the fourth embodiment is different from the third embodiment in that the height of the baffle 62 is adjustable, and the baffle 62 includes a movable portion 622 and a fixing portion 624 and a fixing device 626. The fixing device 626 can fix the movable portion 622 and the fixing portion 624 together, and the fixed position can be adjusted. In this embodiment, the fixing device 626 includes a nut 6264 and a bolt 6262 disposed on one side of the movable portion 622. Correspondingly, the fixing portion 624 is provided with a groove 6242 through which the bolt 6262 passes, and cooperates with the nut 6264 to fix the movable portion 622 on the fixing portion 624. The nut 6264 is loosened, the movable portion 622 is moved up and down relative to the fixed portion 624, and the movable portion 622 is fixed, so that the height of the movable portion 622 relative to the fixed portion 624 can be adjusted. When the sputtering is performed, the movable portion 622 is tightly pressed to the side of the substrate to be sputtered. paste.

The height of the baffle is adjustable for substrates of different heights.

Of course, in the above embodiments, depending on the shape of the substrate, the baffle may also have a corresponding shape, such as a curved shape or a circular shape.

Referring to the ninth drawing, a schematic diagram of a DLC film layer sputtering apparatus including the anode plate 300 of the first embodiment includes a discharge chamber 70, a target 71, an anode plate 300, and a vacuum pump 74. The discharge chamber 70 is provided with a gas inlet 701 for introducing a discharge gas, and the discharge gas is generally an inert gas such as argon gas or helium gas. When sputtering, the substrate 73 was placed on anode plate 300, a vacuum pump 74 to the discharge chamber 70 evacuated to a vacuum of 10 ^{- 2} Pa or less, to which pressure is charged ^10-10-- discharge gas of ² Pa, in A high voltage is applied between the substrate 73 and the target 71 to dissipate the discharge gas, and a plasma bombardment target 71 is generated. The atoms in the target 71 are bombarded and finally deposited on the surface of the substrate 73.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

Discharge chamber. . . 10,70

Target. . . 11,71

Anode plate. . . 12

Substrate. . . 13,20,34,44,54,73

Vacuum pump. . . 14,74

DLC film layer. . . 22,331,332,36

Covering section. . . 222

Substrate. . . 30,40

Upper surface. . . 302,402

Baffle. . . 32, 42, 52, 62

Concave base material. . . 31

side. . . 311

Bottom surface. . . 312'

Packing area. . . 333

Fixed plate. . . 46,56

spring. . . 48

Screw hole. . . 562

Screw. . . 58

Fixed part. . . 624

Activities section. . . 622

Fixtures. . . 626

bolt. . . 6262

Nut. . . 6264

The first figure is a prior art DC sputter DLC film layer device.

The second figure is a schematic representation of a DLC film formed by prior art.

The third figure is a schematic view of the structure of the anode plate of the first embodiment.

The fourth figure is a schematic diagram of the structure of the anode plate of the first embodiment.

The fifth drawing is a schematic view showing the structure of the DLC film layer which is sputtered by the anode plate of the first embodiment.

The sixth drawing is a schematic view showing the structure of the anode plate of the second embodiment.

The seventh drawing is a schematic view showing the structure of the anode plate of the third embodiment.

The eighth drawing is a schematic view showing the structure of the anode plate baffle of the fourth embodiment.

The ninth drawing is a schematic view of a DLC film layer sputtering apparatus including the anode plate of the first embodiment.

Substrate. . . 30

Upper surface. . . 302

Baffle. . . 32

Substrate. . . 34

Claims (14)

An anode plate comprising a substrate and a baffle disposed on the substrate for abutting against a side of the substrate to be sputtered, and the top of the baffle is raised above the top of the substrate. The anode plate of claim 1, wherein the top of the baffle is 1 to 10 microns above the top of the substrate. The anode plate of claim 1, wherein the baffle height is adjustable. The anode plate of claim 3, wherein the baffle comprises a movable portion, a fixing portion and a fixing device, and the fixing device is configured to fix the movable portion on the fixing portion, and the fixing position thereof is adjustable. The anode plate of claim 4, wherein the fixing portion defines a groove, the fixing device comprises a nut and a bolt fixed to the movable portion, the bolt passes through the groove, the nut and the nut The bolt fit secures the movable portion to the fixed portion. The anode plate of claim 1, further comprising at least two fixing plates and two springs, the fixing plate being fixed on the substrate, the baffle being disposed between the two fixing plates, the spring connection The fixing plate and the baffle are arranged to abut the baffle. The anode plate of claim 1, wherein the anode plate further comprises at least two fixing plates and two screws, the fixing plate is fixed on the substrate, and a screw hole is arranged thereon, wherein the two fixing plates are arranged such that A baffle is placed between the two fixing plates, and the screw cooperates with the screw hole to make the baffle abut the substrate. A sputtering device for sputtering a diamond-like film, comprising: a vacuum discharge chamber, a target disposed in the vacuum discharge chamber, and an anode plate, the anode plate including a substrate and a baffle, the baffle being disposed on the On the substrate, it is used to abut the side of the substrate to be sputtered, and the top of the baffle is raised above the top of the substrate. A sputtering apparatus for a sputter-like diamond film according to claim 8 wherein the top of the baffle is 1 to 10 microns above the top of the substrate. A sputtering apparatus for sputtering a diamond-like film according to the scope of claim 8 wherein the height of the baffle is adjustable. The sputtering device for sputtering a diamond film according to the invention of claim 10, wherein the baffle comprises a movable portion, a fixing portion and a fixing device, wherein the fixing device is used for fixing the movable portion to the fixing portion On the top, its fixed position is adjustable. The sputter device for sputtering a diamond film according to claim 11, wherein the fixing portion has a groove, the fixing device comprises a nut and a bolt fixed to the movable portion, the bolt Through the groove, the nut cooperates with the bolt to fix the movable portion to the fixing portion. The sputtering device for sputtering a diamond-like film according to claim 8 , further comprising at least two fixing plates and two springs, the fixing plate is fixed on the substrate, and the baffle is placed on the two Between the fixing plates, the spring connects the fixing plate and the baffle so that the baffle is in close contact with the substrate. The sputtering device for sputtering a diamond-like film according to claim 8 , further comprising at least two fixing plates and two screws, the fixing plate being fixed on the substrate and having a screw hole thereon The two fixing plates are disposed such that the baffle is placed between the two fixing plates, and the screw cooperates with the screw holes to make the baffle abut the substrate.