TWI425892B - A method for forming a transfer film and an aluminum wiring for forming an aluminum wiring - Google Patents

A method for forming a transfer film and an aluminum wiring for forming an aluminum wiring Download PDF

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Publication number
TWI425892B
TWI425892B TW098106826A TW98106826A TWI425892B TW I425892 B TWI425892 B TW I425892B TW 098106826 A TW098106826 A TW 098106826A TW 98106826 A TW98106826 A TW 98106826A TW I425892 B TWI425892 B TW I425892B
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Taiwan
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layer
aluminum
forming
aluminum wiring
photoresist
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TW098106826A
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Chinese (zh)
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TW200948240A (en
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Satoshi Iwamoto
Seiji Kawagishi
Hiroaki Kuwada
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Jsr Corp
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00Metals, their alloys or their compounds
    • B32B2311/24Aluminium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Description

鋁配線形成用轉印薄膜及鋁配線之形成方法Transfer film for forming aluminum wiring and method for forming aluminum wiring

本發明係關於一種由金屬箔所成鋁配線形成用轉印薄膜及鋁配線之形成方法,更詳言之,係關於可輕易地形成厚膜鋁配線,且可獲得電特性或平滑性優異之鋁配線之鋁配線形成用轉印薄膜。The present invention relates to a transfer film for forming an aluminum wiring formed by a metal foil, and a method for forming an aluminum wiring. More specifically, it is possible to easily form a thick-film aluminum wiring and obtain excellent electrical characteristics or smoothness. A transfer film for forming aluminum wiring of aluminum wiring.

近年來,對於電路基板或顯示器面板中之鋁配線加工,已朝高密度化及高精細化進展。伴隨著高密度化、高精細化,而要求鋁配線之尺寸變小,例如由於配線之線寬變細,因而更進一步要求導電性的提升。In recent years, the processing of aluminum wiring in a circuit board or a display panel has progressed toward higher density and higher definition. With the increase in density and high definition, the size of the aluminum wiring is required to be small. For example, since the line width of the wiring is reduced, the conductivity is further required.

過去,該等鋁配線之成形方法已知有以電鍍法、真空製程之蒸鍍法、濺射法等形成金屬膜,塗佈光阻劑、進行曝光、顯像,隨後以蝕刻液形成鋁配線之方法。In the past, it has been known to form a metal film by a plating method, a vapor deposition method of a vacuum process, a sputtering method, or the like, apply a photoresist, perform exposure, development, and then form an aluminum wiring with an etching solution. The method.

然而,上述電鍍法、真空製程之蒸鍍法、濺射法在步驟之生產量慢,尤其,為了改善導電性而使金屬膜形成為厚膜會有生產量更慢等之問題。又外,若底層之表面平滑性不良,則亦有與底層追隨性、金屬膜之平滑性不良之問題However, the above plating method, the vapor deposition method of the vacuum process, and the sputtering method are slow in the production amount in the step, and in particular, in order to improve the conductivity, forming the metal film into a thick film may cause a problem that the production amount is slower. In addition, if the surface smoothness of the underlayer is poor, there is also a problem of poor followability with the underlying layer and smoothness of the metal film.

本發明係基於以上之問題而完成者。The present invention has been completed based on the above problems.

本發明之第一目的係提供一種適用於鋁配線(例如,印刷電路基板、多層電路基板、多晶片模組、LSI、軟性面板顯示器之電極及反射板等)之形成之鋁配線形成用轉印薄膜,及使用該鋁配線形成用轉印薄膜之鋁配線形成方法。A first object of the present invention is to provide a transfer of aluminum wiring suitable for forming aluminum wiring (for example, a printed circuit board, a multilayer circuit board, a multi-chip module, an LSI, an electrode of a flexible panel display, a reflector, etc.) A film and a method of forming an aluminum wiring using the transfer film for forming an aluminum wiring.

本發明之第二目的係提供一種相較於過去之製造方法,可實質地改善作業性,即使金屬膜以厚膜形成時製造效率亦優異之鋁配線製造方法。A second object of the present invention is to provide an aluminum wiring manufacturing method which is excellent in manufacturing efficiency even when a metal film is formed into a thick film, in comparison with the conventional manufacturing method.

本發明之第三目的係提供一種表面平滑性優異之鋁配線形成方法。A third object of the present invention is to provide a method of forming an aluminum wiring excellent in surface smoothness.

解決上述目的之本發明係鋁配線形成用轉印薄膜,其特徵為為在支撐薄膜上層合(A)光阻層、(B)鋁層及(C)黏著層,其較佳樣態係上述鋁配線形成用轉印薄膜為:上述(B)鋁層係藉由鋁箔形成,上述(B)鋁層之厚度為1~20μm,上述(C)黏著層為熱硬化性樹脂組成物。The present invention for solving the above object is a transfer film for forming an aluminum wiring, characterized in that a (A) photoresist layer, (B) an aluminum layer, and (C) an adhesive layer are laminated on a support film, and the preferred aspect is the above. In the transfer film for forming an aluminum wiring, the (B) aluminum layer is formed of an aluminum foil, and the (B) aluminum layer has a thickness of 1 to 20 μm, and the (C) adhesive layer is a thermosetting resin composition.

又本發明為一種鋁配線形成方法,其特徵為包含下列步驟:在基板上藉由使上述鋁配線形成用轉印薄膜之黏著層與基板抵接之方式進行轉印,在基板上形成層合體之步驟,使構成該層合體之(A)光阻層進行曝光處理而形成光阻圖型之潛像之步驟;使上述(A)光阻層經顯像處理使光阻圖型顯像化之步驟;以及使上述(B)鋁層經蝕刻處理形成對應於光阻圖型之鋁配線之步驟。Further, the present invention provides a method of forming an aluminum wiring, comprising the steps of: forming a laminate on a substrate by transferring an adhesive layer of the aluminum wiring forming transfer film to a substrate; a step of exposing the (A) photoresist layer constituting the laminate to form a latent image of a resist pattern; and subjecting the (A) photoresist layer to development processing to develop a photoresist pattern And the step of etching the aluminum layer (B) to form an aluminum wiring corresponding to the photoresist pattern.

依據本發明之鋁配線形成用轉印薄膜及鋁配線之形成法,係可製造作業性良好,使鋁層成為厚膜時之製造效率亦優異,阻抗值低之電極。另外,由於不受基板表面粗糙度之影響,因此表面平滑性優異,而可獲得亦可作為反射板之優異鋁配線。According to the method for forming a transfer film for forming an aluminum wiring and an aluminum wiring according to the present invention, it is possible to manufacture an electrode which is excellent in workability, has an excellent manufacturing efficiency when the aluminum layer is a thick film, and has a low resistance value. Further, since it is not affected by the surface roughness of the substrate, the surface smoothness is excellent, and an excellent aluminum wiring which can also be used as a reflector can be obtained.

<鋁配線形成用轉印薄膜><Transfer film for forming aluminum wiring>

本發明之鋁配線形成用轉印薄膜係在支撐薄膜上依序層合(A)光阻層、(B)鋁層及(C)黏著層。又,本發明之鋁配線形成用轉印薄膜亦可為在支撐薄膜上依序層合(B)鋁層及(C)黏著層者。In the transfer film for forming an aluminum wiring of the present invention, the (A) photoresist layer, the (B) aluminum layer, and the (C) adhesive layer are sequentially laminated on the support film. Further, the transfer film for forming an aluminum wiring of the present invention may be one in which the (B) aluminum layer and the (C) adhesive layer are sequentially laminated on the support film.

(A)光阻層(A) photoresist layer

本發明中形成光阻層之材料可使用習知之光阻劑。光阻劑為負型,亦可為正型,但由於負型較容易形成本發明之鋁配線形成用轉印薄膜而較好。As the material for forming the photoresist layer in the present invention, a conventional photoresist can be used. The photoresist is either a negative type or a positive type, but it is preferable that the negative type is easy to form the transfer film for forming an aluminum wiring of the present invention.

本發明中之光阻層例如含有感光性單體、光聚合起始劑及結合劑。The photoresist layer in the present invention contains, for example, a photosensitive monomer, a photopolymerization initiator, and a binder.

感光性單體Photosensitive monomer

感光性單體為藉由曝光聚合而改變對顯像液溶解性之物質,例如藉由曝光聚合,曝光部份成為鹼不溶性或鹼難溶性之物質。至於感光性單體,若使用藉由該曝光成為鹼不溶性等之物質時,則有可輕易地賦予曝光部分與未曝光部份之對比,使鋁配線之高精細化或鋁配線形狀易受控制之優點。至於藉由該曝光而成為鹼不溶性等之物質可舉例為例如含有乙烯性不飽和基之化合物,較好為多官能性(甲基)丙烯酸酯。The photosensitive monomer is a substance which changes solubility in a developing solution by exposure polymerization, and for example, by exposure polymerization, the exposed portion becomes a substance which is insoluble in alkali or insoluble in alkali. As for the photosensitive monomer, when a substance which becomes alkali-insoluble or the like by the exposure is used, it is possible to easily give a contrast between the exposed portion and the unexposed portion, and the aluminum wiring is highly refined or the aluminum wiring shape is easily controlled. The advantages. As the substance which becomes alkali-insoluble or the like by the exposure, for example, a compound containing an ethylenically unsaturated group is preferable, and a polyfunctional (meth) acrylate is preferable.

上述含有乙烯性不飽和基之化合物之具體例可舉例為乙二醇、丙二醇等烷二醇之二(甲基)丙烯酸酯類;聚乙二醇、聚丙二醇等聚烷二醇之二(甲基)丙烯酸酯類;兩端羥基聚丁二烯、兩端羥基聚異戊間二烯、兩端羥基聚己內酯等兩端羥基化聚合物之二(甲基)丙烯酸酯類;甘油、1,2,4-丁三醇、三羥甲基烷、四羥甲基烷、季戊四醇、二季戊四醇等三價以上之多價醇之聚(甲基)丙烯酸酯類;三價以上之多價醇之聚烷二醇加成物之聚(甲基)丙烯酸酯類;1,4-環己二醇、1,4-苯二醇類等環式多元醇之聚(甲基)丙烯酸酯類;聚酯(甲基)丙烯酸酯、環氧基(甲基)丙烯酸酯、胺基甲酸酯(甲基)丙烯酸酯、醇酸樹脂(甲基)丙烯酸酯、聚矽氧樹脂(甲基)丙烯酸酯、螺烷(spirane)樹脂(甲基)丙烯酸酯等寡聚(甲基)丙烯酸酯類等,該等可單獨使用或組合兩種以上使用。Specific examples of the compound containing an ethylenically unsaturated group include di(meth)acrylates of alkylene glycols such as ethylene glycol and propylene glycol; and polyalkylene glycols such as polyethylene glycol and polypropylene glycol. Acrylates; bis(meth)acrylates of hydroxylated polymers at both ends, hydroxypolybutadiene, hydroxypolyisoprene, hydroxypolycaprolactone, etc.; glycerol, Poly(meth)acrylates of trivalent or higher polyvalent alcohols such as 1,2,4-butanetriol, trimethylolane, tetramethylolane, pentaerythritol, dipentaerythritol, etc.; Poly(meth)acrylates of polyalkylene glycol adducts of alcohols; poly(meth)acrylates of cyclic polyols such as 1,4-cyclohexanediol and 1,4-benzenediol ; polyester (meth) acrylate, epoxy (meth) acrylate, urethane (meth) acrylate, alkyd (meth) acrylate, polyoxy oxy resin (methyl) An oligo (meth) acrylate such as an acrylate or a spirane resin (meth) acrylate, or the like may be used alone or in combination of two or more.

該等中,最好使用三羥甲基丙烷三丙烯酸酯。Among these, trimethylolpropane triacrylate is preferably used.

上述多官能性(甲基)丙烯酸酯之分子量以100~2,000較佳。The molecular weight of the above polyfunctional (meth) acrylate is preferably from 100 to 2,000.

本發明之光阻層中之感光性單體之含有比例相對於100質量份之黏合樹脂,通常為5~200質量份,較好為30~130質量份。The content ratio of the photosensitive monomer in the photoresist layer of the present invention is usually 5 to 200 parts by mass, preferably 30 to 130 parts by mass, per 100 parts by mass of the binder resin.

光聚合起始劑Photopolymerization initiator

光聚合起始劑之具體例可舉例為苄基、苯偶因、二苯甲酮、樟腦醌、2-羥基-2-甲基-1-苯基丙-1-酮、1-羥基環己基苯酮、2,2-二甲氧基-2-苯基苯乙酮、2-甲基-[4’-(甲硫基)苯基]-2-嗎啉-1-丙酮、2-苄基-2-二甲胺基-1-(4-嗎啉基苯基)-丁-1-酮等羰基化合物;偶氮異丁腈、4-疊氮基苯甲醛等之偶氮化合物或疊氮化合物;硫醇二硫醚、雙(2,4,6-三甲基苯甲醯基)-苯基膦氧化物等有機硫化合物;苯甲醯過氧化物、二-第三丁基過氧化物、第三丁基過氧化氫,枯基過氧化氫、對薄荷烷過氧化氫等有機過氧化物;1,3-雙(三氯甲基)-5-(2’-氯苯基)-1,3,5-三嗪、2-[2-(2-呋喃基)乙烯基]-4,6-雙(三氯甲基)-1,3,5-三嗪等三鹵甲烷類;2,2’-雙(2-氯苯基)4,5,4’,5’-四苯基1,2’-雙咪唑等咪唑二聚物等。該等可單獨使用或組合兩種以上使用。Specific examples of the photopolymerization initiator include benzyl, benzoin, benzophenone, camphorquinone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-hydroxycyclohexyl. Benzophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-methyl-[4'-(methylthio)phenyl]-2-morpholin-1-propanone, 2-benzyl a carbonyl compound such as benzyl-2-dimethylamino-1-(4-morpholinylphenyl)-butan-1-one; an azo compound or a stack of azoisobutyronitrile or 4-azidobenzaldehyde Nitrogen compound; organic sulfur compound such as thiol disulfide or bis(2,4,6-trimethylbenzylidene)-phenylphosphine oxide; benzamidine peroxide, di-t-butyl group Oxide, tert-butyl hydroperoxide, cumyl hydroperoxide, p-menthane hydrogen peroxide and other organic peroxides; 1,3-bis(trichloromethyl)-5-(2'-chlorophenyl a trihalomethane such as -1,3,5-triazine, 2-[2-(2-furyl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-triazine An imidazole dimer such as 2,2'-bis(2-chlorophenyl)4,5,4',5'-tetraphenyl 1,2'-bisimidazole. These may be used alone or in combination of two or more.

本發明之光阻層中之光聚合起始劑含有比例相對於100質量份之感光性單體,通常為1~100質量份,較好為1~50質量份。The photopolymerization initiator in the photoresist layer of the present invention is contained in an amount of usually 1 to 100 parts by mass, preferably 1 to 50 parts by mass, per 100 parts by mass of the photosensitive monomer.

黏合樹脂Adhesive resin

黏合樹脂可使用各種樹脂,但以使用以30~100質量%比例含有鹼可溶性樹脂之黏合樹脂較佳。此處所謂「鹼可溶樹脂」為具有可藉由鹼性顯像液溶解,實現標的之顯像處理程度之溶解性之性質。若使用鹼可溶性樹脂,則有例如藉由改變含有羧基之單體之含量而可控制相對於鹼顯像液之溶解速度或鋁配線形狀之優點。Although various resins can be used for the adhesive resin, it is preferable to use an adhesive resin containing an alkali-soluble resin in a ratio of 30 to 100% by mass. Here, the "alkali-soluble resin" is a property which can be dissolved by an alkaline developing solution to achieve the solubility of the target image forming treatment. When an alkali-soluble resin is used, there is an advantage that the dissolution rate with respect to the alkali developing solution or the shape of the aluminum wiring can be controlled, for example, by changing the content of the monomer having a carboxyl group.

該鹼可溶性樹脂之具體例可舉例為例如(甲基)丙烯酸系樹脂、羥基苯乙烯樹脂、酚醛清漆樹脂、聚酯樹脂等。Specific examples of the alkali-soluble resin include, for example, a (meth)acrylic resin, a hydroxystyrene resin, a novolac resin, a polyester resin, and the like.

該等鹼可溶性樹脂中,最佳者可舉例為下述單體(甲)與單體(丙)之共聚物,單體(甲)、單體(乙)及單體(丙)之共聚物等丙烯酸系樹脂。Among these alkali-soluble resins, the most preferred ones are copolymers of the following monomers (A) and monomers (C), and copolymers of monomer (A), monomer (B) and monomer (C). Acrylic resin.

單體(甲):含有羧基之單體類Monomer (A): a monomer containing a carboxyl group

丙烯酸、甲基丙烯酸、馬來酸、富馬酸、巴豆酸、衣康酸、檸康酸、仲康酸、桂皮酸、琥珀酸單(2-(甲基)丙烯醯氧基乙酯)、ω-羧基-聚己內酯單(甲基)丙烯酸酯等。Acrylic acid, methacrylic acid, maleic acid, fumaric acid, crotonic acid, itaconic acid, citraconic acid, seccoic acid, cinnamic acid, succinic acid mono(2-(methyl) propylene methoxyethyl ester), Ω-carboxy-polycaprolactone mono(meth)acrylate and the like.

單體(乙):含有OH基之單體類Monomer (B): Monomers containing OH groups

(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯等含有羥基之單體類;鄰-羥基苯乙烯、間-羥基苯乙烯、對-羥基苯乙烯等含有酚性羥基之單體類等。Monomers containing hydroxyl groups such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate; o-hydroxystyrene, m-hydroxybenzene A monomer containing a phenolic hydroxyl group such as ethylene or p-hydroxystyrene.

單體(丙):其他可共聚合之單體類Monomer (C): Other copolymerizable monomer

(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸正月桂酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸二環戊烯酯等單體(甲)以外之(甲基)丙烯酸酯類;甲基-α-(羥基甲基)丙烯酸酯、乙基-α-(羥基甲基)丙烯酸酯、正丁基-α-(羥基甲基)丙烯酸酯等具有α-羥基甲基之丙烯酸酯;苯乙烯、α-甲基苯乙烯等芳香族乙烯系單體類;丁二烯、異戊間二烯等共軛二烯類;聚苯乙烯、聚(甲基)丙烯酸甲酯、聚(甲基)丙烯酸乙酯、聚(甲基)丙烯酸苄酯等聚合物鏈之一端具有(甲基)丙烯醯基等聚合性不飽和基之巨單體類等。Methyl (meth)acrylate, ethyl (meth)acrylate, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, n-lauryl (meth)acrylate, (methyl) (meth) acrylates other than monomers (methyl) such as benzyl acrylate, glycidyl (meth) acrylate, cyclohexyl (meth) acrylate, dicyclopentenyl (meth) acrylate; methyl Acrylate having α-hydroxymethyl group such as α-(hydroxymethyl)acrylate, ethyl-α-(hydroxymethyl)acrylate, n-butyl-α-(hydroxymethyl)acrylate; styrene , aromatic vinyl monomers such as α-methylstyrene; conjugated dienes such as butadiene and isoprene; polystyrene, poly(methyl) acrylate, poly(methyl) A macromonomer having a polymerizable unsaturated group such as a (meth) acrylonitrile group at one end of a polymer chain such as ethyl acrylate or polybenzyl (meth) acrylate.

上述單體(甲)與單體(丙)之共聚物,及單體(甲)、單體(乙)及單體(丙)之共聚物係藉由在源自單體(甲)之共聚合成分之存在而成為具有鹼可溶性者。其中單體(甲)、單體(乙)及單體(丙)之共聚物就(A)無機粉體之分散安定性或後述對鹼顯像液之溶解性之觀點而言為最佳。The copolymer of the above monomer (A) and monomer (C), and the copolymer of monomer (A), monomer (B) and monomer (C) are derived from the monomer (A) The presence of a polymeric component results in an alkali-soluble one. Among them, the copolymer of the monomer (A), the monomer (B) and the monomer (C) is most preferable from the viewpoint of the dispersion stability of the (A) inorganic powder or the solubility of the alkali developing solution described later.

該共聚物中源自單體(甲)之共聚合成分之含有率較好為5~60質量%,最好為10~40質量%,源自單體(乙)之共聚合成分之含有率較好為1~50質量%,最好為5~30質量%。The content of the copolymer component derived from the monomer (A) in the copolymer is preferably from 5 to 60% by mass, preferably from 10 to 40% by mass, based on the content of the copolymerized component of the monomer (B). It is preferably from 1 to 50% by mass, preferably from 5 to 30% by mass.

至於本發明中使用之鹼可溶性樹脂之最佳組成舉例為甲基丙烯酸/甲基丙烯酸苄酯/甲基丙烯酸環己酯共聚物、甲基丙烯酸/甲基丙烯酸2-羥基丙酯/甲基丙烯酸正丁酯共聚物、及甲基丙烯酸/琥珀酸單(2-(甲基)丙烯醯氧基乙酯)/甲基丙烯酸2-羥基丙酯/甲基丙烯酸正丁酯共聚物等。The optimum composition of the alkali-soluble resin used in the present invention is exemplified by methacrylic acid/benzyl methacrylate/cyclohexyl methacrylate copolymer, methacrylic acid/2-hydroxypropyl methacrylate/methacrylic acid. a n-butyl ester copolymer, and a methacrylic acid/succinic acid mono(2-(methyl) propylene methoxyethyl ester)/2-hydroxypropyl methacrylate/n-butyl methacrylate copolymer.

上述鹼可溶性樹脂之分子量Mw較好為5,000~5,000,000,更好為10,000~300,000。The molecular weight Mw of the above alkali-soluble resin is preferably from 5,000 to 5,000,000, more preferably from 10,000 to 300,000.

本發明之光阻層較好係藉由加熱或曝光使其硬化。若可使光阻層硬化,則在後述鋁層之蝕刻步驟前藉由使光阻層硬化,使光阻層與鋁層接著變強固,即使在強的條件下進行蝕刻處理,亦可防止光阻層自鋁層脫離。The photoresist layer of the present invention is preferably cured by heating or exposure. When the photoresist layer can be cured, the photoresist layer and the aluminum layer are subsequently strengthened by curing the photoresist layer before the etching step of the aluminum layer described later, and the light can be prevented even if the etching treatment is performed under strong conditions. The resist layer is detached from the aluminum layer.

本發明之光阻層厚度通常為0.1~40μm,較好為0.5~20μm。The thickness of the photoresist layer of the present invention is usually from 0.1 to 40 μm, preferably from 0.5 to 20 μm.

任意成分Optional ingredient

本發明之光阻層中亦可含有顏料、增黏劑、可塑劑、分散劑、顯像促進劑、接著助劑、光暈防止劑、平流劑、保存安定劑、消泡劑、抗氧化劑、紫外線吸收劑、增感劑、鏈轉移劑等各種添加劑作為任意成分。The photoresist layer of the present invention may further contain a pigment, a tackifier, a plasticizer, a dispersant, a development accelerator, a secondary auxiliary agent, a halo preventing agent, a leveling agent, a preservation stabilizer, an antifoaming agent, an antioxidant, and the like. Various additives such as an ultraviolet absorber, a sensitizer, and a chain transfer agent are optional components.

(B)鋁層(B) aluminum layer

本發明之鋁層實質上不含鋁以外的成分。The aluminum layer of the present invention contains substantially no components other than aluminum.

鋁層較好以金屬箔形成。至於金屬箔之製法並無特別限制,可使用以壓延法、電著法等製造之鋁箔。The aluminum layer is preferably formed of a metal foil. The method for producing the metal foil is not particularly limited, and an aluminum foil produced by a calendering method, an electroforming method, or the like can be used.

鋁層厚度以1~20μm較佳。若鋁層厚度小於1μm,則製作鋁配線形成用轉印薄膜時之與光阻層或黏著層之貼合變困難。若鋁層厚度大於20μm,則蝕刻時溶解去除鋁層需要長時間,此期間容易造成光阻層自鋁層剝離等問題。The thickness of the aluminum layer is preferably from 1 to 20 μm. When the thickness of the aluminum layer is less than 1 μm, it is difficult to bond the photoresist layer or the adhesive layer when the transfer film for forming an aluminum wiring is formed. If the thickness of the aluminum layer is more than 20 μm, it takes a long time to dissolve and remove the aluminum layer during etching, and during this period, problems such as peeling of the photoresist layer from the aluminum layer are likely to occur.

(C)黏著層(C) adhesive layer

黏著層較好為由本發明之薄膜製造鋁配線時,介於鋁層與基板之間且具有將鋁層接著在基板上之機能之熱硬化性樹脂組成物。The adhesive layer is preferably a thermosetting resin composition which is interposed between the aluminum layer and the substrate and has a function of attaching the aluminum layer to the substrate when the aluminum wiring is produced from the film of the present invention.

熱硬化性樹脂組成物Thermosetting resin composition

本發明之熱硬化性樹脂組成物中使用之熱硬化性樹脂可舉例為例如苯酚樹脂、環氧樹脂、尿素樹脂、三聚氰胺樹脂、不飽和聚酯樹脂、聚胺基甲酸酯、聚醯亞胺、(甲基)丙烯酸系樹脂、聚酯樹脂等。The thermosetting resin used in the thermosetting resin composition of the present invention may, for example, be phenol resin, epoxy resin, urea resin, melamine resin, unsaturated polyester resin, polyurethane, polyimine. , (meth)acrylic resin, polyester resin, and the like.

又,熱硬化性樹脂組成物亦可使用含有上述樹脂與交聯劑之組成物。Further, as the thermosetting resin composition, a composition containing the above resin and a crosslinking agent can also be used.

至於交聯劑並無特別限制,但以同一分子內含有兩個以上乙烯性不飽和鍵、環氧基、(烷氧基)三聚氰胺基等交聯性化合物較佳。該等化合物可依據使用條件適度的與自由基產生劑、酸產生劑、鹼性觸媒、多價羧酸酐等交聯反應助劑或觸媒組合使用。The crosslinking agent is not particularly limited, but a crosslinkable compound containing two or more ethylenically unsaturated bonds, an epoxy group, or an (alkoxy) melamine group in the same molecule is preferred. These compounds can be used in combination with a crosslinking reaction aid or a catalyst such as a radical generator, an acid generator, a basic catalyst, or a polyvalent carboxylic anhydride, depending on the conditions of use.

具有乙烯性不飽和雙鍵之交聯劑可舉例為多官能性之(甲基)丙烯酸酯類作為較佳之化合物。具體而言,二官能性(甲基)丙烯酸酯舉例為例如ARONICS M-210、ARONICS M-240、ARONICS M-6200(東亞合成化學工業(股)製)、KAYARAD DDDA、KAYARAD HX-220、KAYARAD R-604(日本化藥(股)製)、V260、V312、V335HP(大阪有機化學工業(股)製)(市售品)等。三官能性以上之(甲基)丙烯酸酯舉例為例如三羥甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、叁丙烯醯氧基乙基磷酸酯、季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、二季戊四醇六丙烯酸酯等。具體而言,舉例為ARONICS M-309、ARONICS M-400、ARONICS M-405、ARONICS M-450、ARONICS M-7100、ARONICS M-8030、ARONICS M-8060(東亞合成化學工業(股)製)、KAYARAD DPHA、KAYARAD TMPTA、KAYARAD DPCA-20、KAYARAD DPCA-30、KAYARAD DPCA-60、KAYARAD DPCA-120(日本化藥(股)製)、V-295、V-300、V-360、V-GPT、V-3PA、V-400(大阪有機化學工業(股)製)、PPZ(出光石油化學(股)製)等市售品。The crosslinking agent having an ethylenically unsaturated double bond can be exemplified by a polyfunctional (meth) acrylate as a preferred compound. Specifically, the difunctional (meth) acrylate is exemplified by, for example, ARONICS M-210, ARONICS M-240, ARONICS M-6200 (manufactured by East Asian Synthetic Chemical Industry Co., Ltd.), KAYARAD DDDA, KAYARAD HX-220, KAYARAD. R-604 (made by Nippon Kayaku Co., Ltd.), V260, V312, V335HP (made by Osaka Organic Chemical Industry Co., Ltd.) (commercial product). The trifunctional or higher (meth) acrylate is exemplified by, for example, trimethylolpropane triacrylate, pentaerythritol triacrylate, decyl decyl oxyethyl phosphate, pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, and the like. Pentaerythritol hexaacrylate and the like. Specifically, for example, ARONICS M-309, ARONICS M-400, ARONICS M-405, ARONICS M-450, ARONICS M-7100, ARONICS M-8030, ARONICS M-8060 (manufactured by East Asia Synthetic Chemical Industry Co., Ltd.) , KAYARAD DPHA, KAYARAD TMPTA, KAYARAD DPCA-20, KAYARAD DPCA-30, KAYARAD DPCA-60, KAYARAD DPCA-120 (Nippon Chemical Co., Ltd.), V-295, V-300, V-360, V- Commercial products such as GPT, V-3PA, V-400 (made by Osaka Organic Chemical Industry Co., Ltd.) and PPZ (Ishigaku Petrochemical Co., Ltd.).

該等中,以ARONICS M-400、KAYARAD DPHA等三官能性以上之多官能性(甲基)丙烯酸酯可較好地使用。如上述之具有乙烯性不飽和雙鍵之交聯劑亦可兩種以上組合使用。Among these, a trifunctional or higher polyfunctional (meth) acrylate such as ARONICS M-400 or KAYARAD DPHA can be preferably used. The crosslinking agent having an ethylenically unsaturated double bond as described above may also be used in combination of two or more.

具有環氧基之交聯劑之較佳化合物可舉例為多官能性縮水甘油醚類。具體而言舉例為EPICOTE 1001、EPICOTE 1002、EPICOTE 1003、EPICOTE 1004、EPICOTE 1007、EPICOTE 1009、EPICOTE 1010、EPICOTE 828(商品名;油化蜆殼環氧(股)製)等雙酚A型環氧樹脂;EPICOTE 807(商品名;油化蜆殼環氧(股)製)等雙酚P型環氧樹脂;EPICOTE 152、EPICOTE 154(商品名;油化蜆殼環氧(股)製)、EPPN 201、EPPN 202(商品名;日本化藥(股)製)等雙酚酚醛清漆型環氧樹脂;EOCN 102、EOCN 103S、EOCN 104S、1020、1025、1027(商品名;日本化藥(股)製)、EPICOTE 180S75(商品名;油化蜆殼環氧(股)製)等甲酚酚醛清漆型環氧樹脂;EPICOTE 1032H60、EPICOTE XY-4000(商品名;油化蜆殼環氧(股)製)等多酚型環氧樹脂、CY-175、CY-177、CY-179、ALUDALIGHT CY-182、ALUDALIGHT CY-192、184(商品名;汽巴嘉基(股)製)、ERL-4234、4299、4221、4206(商品名;UCC公司製)、SHODAIN 509(商品名;昭和電工(股)製)、EPICLON 200、EPICLON 400(商品名;大日本油墨(股)製)、EPICOTE 871、EPICOTE 872(商品名;油化蜆殼環氧(股)製)、ED-5661、ED-5662(商品名;CELANESE塗料(股)製)等之環狀脂肪族環氧樹脂;EPOLIGHT 100MF(共榮社油脂化學工業(股)製)、EPIOL TMP(日本油脂(股)製)等之脂肪族聚縮水甘油醚等。Preferred compounds of the crosslinking agent having an epoxy group are exemplified by polyfunctional glycidyl ethers. Specific examples are bisphenol A type epoxy resins such as EPICOTE 1001, EPICOTE 1002, EPICOTE 1003, EPICOTE 1004, EPICOTE 1007, EPICOTE 1009, EPICOTE 1010, EPICOTE 828 (trade name; oil-based clamshell epoxy) ; bisphenol P type epoxy resin such as EPICOTE 807 (trade name; oil-based clamshell epoxy); EPICOTE 152, EPICOTE 154 (trade name; oil-based clamshell epoxy), EPPN 201, EPPN a bisphenol novolak type epoxy resin such as 202 (trade name; manufactured by Nippon Kayaku Co., Ltd.); EOCN 102, EOCN 103S, EOCN 104S, 1020, 1025, 1027 (trade name; manufactured by Nippon Kayaku Co., Ltd.), A phenol novolac type epoxy resin such as EPICOTE 180S75 (trade name; oil-based clamshell epoxy); polyphenols such as EPICOTE 1032H60 and EPICOTE XY-4000 (trade name; oil-based clamshell epoxy) Type epoxy resin, CY-175, CY-177, CY-179, ALUDALIGHT CY-182, ALUDALIGHT CY-192, 184 (trade name; Ciba Jiaji (share) system), ERL-4234, 4299, 4221 4206 (trade name; manufactured by UCC), SHODAIN 509 (trade name; Showa Electric Co., Ltd.), EPICLON 200, EPICLON 400 (trade name; Dainippon Ink (share) ), a cyclic aliphatic epoxy resin such as EPICOTE 871, EPICOTE 872 (trade name; manufactured by oyster shell epoxy), ED-5661, ED-5662 (trade name; CELANESE coating). An aliphatic polyglycidyl ether such as EPOLIGHT 100MF (manufactured by Kyoei Oil & Fat Chemicals Co., Ltd.) or EPIOL TMP (manufactured by Nippon Oil & Fats Co., Ltd.).

具有(烷氧基)三聚氰胺構造之交聯劑可舉例為例如六羥甲基三聚氰胺、六羥丁基三聚氰胺、部分羥甲基化三聚氰胺及其烷化物,四羥甲基苯并胍胺、部分羥甲基化苯并胍胺及其烷化物等。The crosslinking agent having an (alkoxy) melamine structure can be exemplified by, for example, hexamethylol melamine, hexahydroxybutyl melamine, partially methylolated melamine and its alkylate, tetramethylol benzoguanamine, partial hydroxy group. Methylated benzoguanamine and its alkylate.

熱硬化性樹脂組成物中之交聯劑之含有比例相對於100重量份之上述黏合樹脂,通常為1~1000重量份,較好為1~200重量份。The content of the crosslinking agent in the thermosetting resin composition is usually 1 to 1000 parts by weight, preferably 1 to 200 parts by weight, per 100 parts by weight of the above-mentioned binder resin.

另外,為了加強強度、抑制熱硬化時之收縮,可於黏著劑層中含有填充劑。Further, in order to strengthen the strength and suppress shrinkage during thermal curing, a filler may be contained in the adhesive layer.

支撐薄膜Support film

本發明之鋁配線形成用轉印薄膜係藉由在支撐薄膜上層合(A)光阻層,在該(A)光阻層上層合(B)鋁層,且在該(B)鋁層上層合(C)黏著層而形成。The transfer film for forming an aluminum wiring of the present invention is formed by laminating (A) a photoresist layer on a support film, laminating (B) an aluminum layer on the (A) photoresist layer, and layering the (B) aluminum layer on the (A) photoresist layer. The (C) adhesive layer is formed.

上述支撐薄膜以同時具有耐熱性及耐溶劑性之具有可撓性之樹脂薄膜較佳。藉由使支撐薄膜具有可撓性,可藉由輥塗佈器塗佈糊狀組成物,且可捲成輥狀之狀態保存且供給。形成支撐薄膜之樹脂可舉例為例如聚對苯二甲酸乙二酯、聚酯、聚乙烯、聚丙烯、聚苯乙烯、聚醯亞胺、聚乙烯醇、聚氯乙烯、聚氟乙烯等含氟樹脂、尼龍、纖維素等。支撐薄膜之厚度可為例如20~100μm。支撐薄膜之表面較好經離型處理。藉此,在轉印步驟中可輕易的進行支撐薄膜之剝離操作。The support film is preferably a flexible resin film having heat resistance and solvent resistance. By making the support film flexible, the paste composition can be applied by a roll coater, and can be stored and supplied in a roll-like state. The resin forming the support film can be exemplified by, for example, polyethylene terephthalate, polyester, polyethylene, polypropylene, polystyrene, polyimine, polyvinyl alcohol, polyvinyl chloride, polyvinyl fluoride, etc. Resin, nylon, cellulose, etc. The thickness of the support film may be, for example, 20 to 100 μm. The surface of the support film is preferably subjected to release treatment. Thereby, the peeling operation of the support film can be easily performed in the transfer step.

保護薄膜Protective film

本發明之鋁配線形成用轉印薄膜可在其黏著層上設置保護薄膜。至於保護薄膜,可舉例為例如聚對苯二甲酸乙二酯、聚乙烯薄膜及聚氯乙烯醇系薄膜等。The transfer film for forming an aluminum wiring of the present invention can be provided with a protective film on the adhesive layer. As the protective film, for example, polyethylene terephthalate, a polyethylene film, a polyvinyl chloride film or the like can be exemplified.

鋁配線形成用轉印薄膜之製造方法Method for producing transfer film for forming aluminum wiring

本發明之鋁配線形成用轉印薄膜可如例如下列般製造。The transfer film for forming an aluminum wiring of the present invention can be produced, for example, as follows.

光阻層之形成Formation of photoresist layer

將光阻層中含有之上述成分混練調製糊狀光阻組成物,將其塗佈於支撐薄膜上,形成光阻層。至於塗佈光阻組成物之方法可舉例為網版印刷、輥塗佈法、旋轉塗佈法、澆鑄塗佈法等各種方法。塗佈後可依據需要使組成物乾燥。The paste-like photoresist composition is kneaded by mixing the above components contained in the photoresist layer, and is applied onto a support film to form a photoresist layer. The method of applying the photoresist composition can be exemplified by various methods such as screen printing, roll coating, spin coating, and casting coating. After coating, the composition can be dried as needed.

鋁層之形成Formation of aluminum layer

在光阻層上形成鋁層之方法可舉例為例如在光阻層上層合鋁箔等金屬箔之方法。A method of forming an aluminum layer on the photoresist layer can be exemplified by a method of laminating a metal foil such as an aluminum foil on a photoresist layer.

黏著層之形成Adhesive layer formation

黏著層係藉由塗佈在上述鋁層上而形成。塗佈黏著層之方法較好為效率良好地形成膜厚均勻性優異之膜厚較大的塗膜者,具體而言,由輥塗佈之方法、由刮板之塗佈方法、由簾式塗佈之方法、由金屬線塗佈之方法等。The adhesive layer is formed by coating on the above aluminum layer. The method of applying the adhesive layer is preferably to form a coating film having a large film thickness excellent in film thickness uniformity, specifically, a method of coating by a roll, a coating method by a squeegee, and a curtain type. A method of coating, a method of coating by a metal wire, and the like.

隨後,依據需要使鋁配線形成用轉印薄膜乾燥。乾燥溫度通常為50~150℃,乾燥時間通常為0.5~30分鐘。Subsequently, the aluminum wiring forming transfer film is dried as needed. The drying temperature is usually 50 to 150 ° C, and the drying time is usually 0.5 to 30 minutes.

<鋁配線形成方法><Aluminum wiring forming method>

本發明之鋁配線形成方法包含在基板上依序層合(C)黏著層、(B)鋁層及(A)光阻層形成層合體之層合步驟(i),使上述層合體經曝光處理,在上述(A)光阻層上形成光阻圖形之潛像之曝光步驟(ii),使經歷上述曝光步驟之上述層合體進行顯像處理,於上述(A)光阻層上使光阻圖形顯在化之顯像步驟(iii),使經歷上述顯像步驟之上述層合體經蝕刻處理,形成對應於光阻圖型之鋁層之鋁配線之蝕刻步驟(iv)。The aluminum wiring forming method of the present invention comprises a lamination step (i) of sequentially laminating (C) an adhesive layer, (B) an aluminum layer, and (A) a photoresist layer forming laminate on a substrate, and exposing the laminate Processing, exposing step (ii) of forming a latent image of the photoresist pattern on the (A) photoresist layer, subjecting the laminate subjected to the exposure step to development processing, and performing light on the (A) photoresist layer The resisting step (iii) of the resist pattern is developed, and the laminate subjected to the above-described developing step is subjected to an etching treatment to form an etching step (iv) of the aluminum wiring corresponding to the aluminum layer of the photoresist pattern.

(i)層合步驟(i) lamination step

層合步驟係在(C)黏著層上層合(B)鋁層,在該(B)鋁層上層合(A)光阻層之順序層合而在基板上形成層合體之步驟。The laminating step is a step of laminating (B) an aluminum layer on the (C) adhesive layer, and laminating (A) the photoresist layer on the (B) aluminum layer in this order to form a laminate on the substrate.

至於基板並無特別限制,可依據用途而使用玻璃基板、塑膠基板等。又基板之表面上可依據需要以矽烷偶合劑等藥品處理、電漿處理、以及離子電鍍法、濺射法、氣相反應法及真空蒸鍍法等進行薄膜形成處理之前處理。The substrate is not particularly limited, and a glass substrate, a plastic substrate, or the like can be used depending on the application. Further, the surface of the substrate may be subjected to a treatment such as a drug treatment such as a decane coupling agent, a plasma treatment, an ion plating method, a sputtering method, a gas phase reaction method, or a vacuum vapor deposition method before the film formation treatment.

上述層合體之形成方法可舉例為例如使用本發明之鋁配線形成用轉印薄膜,將該(A)光阻層、(B)鋁層及(C)黏著層轉印在玻璃基板上之方法。The method for forming the above-mentioned laminate can be exemplified by, for example, a method of transferring the (A) photoresist layer, (B) aluminum layer, and (C) adhesive layer onto a glass substrate using the transfer film for forming an aluminum wiring of the present invention. .

此處轉印條件為例如加熱輥之表面溫度為40~140℃,加熱輥之輥壓為0.1~10kg/cm2 ,加熱輥之移動速度為0.1~10m/分鐘。此等操作(轉印步驟)可藉由層合裝置進行。而且,亦可使基板預熱,預熱溫度可為例如40~140℃。Here, the transfer conditions are, for example, a surface temperature of the heating roll of 40 to 140 ° C, a roll pressure of the heating roll of 0.1 to 10 kg/cm 2 , and a moving speed of the heating roll of 0.1 to 10 m/min. These operations (transfer steps) can be performed by a laminating device. Moreover, the substrate may be preheated, and the preheating temperature may be, for example, 40 to 140 °C.

又亦可使用具備(A)光阻層、(B)鋁層及(C)黏著層中之一層或兩層之鋁配線形成用轉印薄膜,將該等依序轉印於玻璃基板上。或者亦可與上述本發明之鋁配線形成用轉印薄膜之製造方法相同,於基板上塗佈黏著組成物,經乾燥形成黏著層,於其上層合金屬箔而形成,再於其上塗佈光阻組成物,經乾燥形成光阻層。Further, a transfer film for forming an aluminum wiring having one or two layers of (A) a photoresist layer, (B) an aluminum layer, and (C) an adhesive layer may be used, and these may be sequentially transferred onto a glass substrate. Alternatively, in the same manner as the method for producing a transfer film for forming an aluminum wiring according to the present invention, an adhesive composition may be applied onto the substrate, dried to form an adhesive layer, and a metal foil may be laminated thereon and then coated thereon. The photoresist composition is dried to form a photoresist layer.

(ii)曝光步驟(ii) Exposure step

透過曝光用光罩於光阻層表面上進行紫外線等幅射線之選擇性照射(曝光)之方法,或以掃描雷射光之方法等,在光阻層上形成鋁配線之潛像。The latent image of the aluminum wiring is formed on the photoresist layer by a method of selectively irradiating (exposure) ultraviolet rays or the like on the surface of the photoresist layer by exposure to a photomask, or by scanning laser light.

輻射線照射裝置可使用微影法中一般使用之紫外線照射裝置,製造半導體及液晶顯示裝置時使用之曝光裝置、雷射裝置等,而非限定於特別者。The radiation irradiation apparatus can use an ultraviolet irradiation apparatus generally used in the lithography method, an exposure apparatus, a laser apparatus, and the like used in the manufacture of a semiconductor or a liquid crystal display device, and is not limited to a particular one.

(iii)顯像步驟(iii) imaging steps

使上述層合體經顯像處理,使光阻圖型於光阻層上顯在化。The laminate is subjected to development processing to visualize the photoresist pattern on the photoresist layer.

顯像處理條件並無特別限制,可依據光阻層之種類,適當選擇顯像液之種類、組成、濃度、顯像時間、顯像溫度、顯像方法(例如浸漬法、振動法、淋洗法、噴佈法、槳葉法等)、顯像裝置等。The development processing conditions are not particularly limited, and the type, composition, concentration, development time, development temperature, and development method (for example, dipping method, vibration method, and rinsing method) of the developing solution can be appropriately selected depending on the type of the photoresist layer. Method, spray method, paddle method, etc.), developing device, etc.

顯像液Imaging liquid

本發明之製造方法之顯像步驟中使用之顯像液以使用鹼顯像液較佳。The developing solution used in the developing step of the production method of the present invention is preferably an alkali developing solution.

鹼顯像液之有效成分可舉例為例如氫氧化鋰、氫氧化鈉、氫氧化鉀、磷酸氫鈉、磷酸氫二銨、磷酸氫二鉀、磷酸氫二鈉、磷酸二氫銨、磷酸二氫鉀、磷酸二氫鈉、矽酸鋰、矽酸鈉、矽酸鉀、碳酸鋰、碳酸鈉、碳酸鉀、硼酸鋰、硼酸鈉、硼酸鉀、氨水等無機鹼性化合物;四甲基氫氧化銨、三甲基羥基乙基氫氧化銨、單甲胺、二甲胺、三甲胺、單乙胺、二乙胺、三乙胺、單異丙胺、二異丙胺、乙醇胺等有機鹼性化合物等。The active ingredient of the alkali developing solution can be exemplified by, for example, lithium hydroxide, sodium hydroxide, potassium hydroxide, sodium hydrogen phosphate, diammonium hydrogen phosphate, dipotassium hydrogen phosphate, disodium hydrogen phosphate, ammonium dihydrogen phosphate, dihydrogen phosphate. Inorganic basic compound such as potassium, sodium dihydrogen phosphate, lithium niobate, sodium citrate, potassium citrate, lithium carbonate, sodium carbonate, potassium carbonate, lithium borate, sodium borate, potassium borate, ammonia, etc.; tetramethylammonium hydroxide An organic basic compound such as trimethylhydroxyethylammonium hydroxide, monomethylamine, dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine or ethanolamine.

鹼顯像液可藉由將上述鹼性化合物之一種或兩種以上溶解於水等之中而調製。鹼性顯像液中之鹼性化合物濃度通常為0.001~10質量%。以鹼顯像液顯像處理之後,通常進行水洗處理,顯像溫度通常為20~50℃。The alkali developing solution can be prepared by dissolving one or two or more of the above basic compounds in water or the like. The concentration of the basic compound in the alkaline developing solution is usually 0.001 to 10% by mass. After the alkali imaging solution is developed, it is usually subjected to a water washing treatment, and the development temperature is usually 20 to 50 °C.

(iv)蝕刻步驟(iv) etching step

使經歷上述顯像步驟之上述層合體經蝕刻處理,溶解去除鋁層之不要部份,藉此形成對應於光阻圖型之鋁層之鋁配線。The laminate subjected to the above-described developing step is subjected to an etching treatment to dissolve and remove unnecessary portions of the aluminum layer, thereby forming an aluminum wiring corresponding to the aluminum pattern of the photoresist pattern.

蝕刻處理條件並無特別限制,而可依據鋁層之種類適當選擇蝕刻液之種類、組成、濃度、處理時間、處理溫度、處理方法(例如浸漬法、搖動法、淋洗法、噴佈法、槳葉法)、處理裝置等。The etching treatment conditions are not particularly limited, and the type, composition, concentration, treatment time, treatment temperature, and treatment method (for example, dipping method, shaking method, rinsing method, spray method, etc.) of the etching liquid can be appropriately selected depending on the type of the aluminum layer. Blade method), processing device, and the like.

蝕刻處理方法Etching treatment method

本發明中之蝕刻處理方法可使用將上述層合體浸漬於蝕刻液中之浸漬法。該浸漬法中使用之蝕刻液種類只要是可蝕刻形成上述鋁層之金屬則無特別限制,但可使用例如酸性水溶液、鹼性水溶液。酸性水溶液可使用硝酸、硫酸、鹽酸、磷酸、乙酸及該等之混合水溶液。鹼性水溶液可使用與上述鹼顯像液相同者。至於其濃度可為例如0.01~10質量%。另外,該等蝕刻液中之浸漬溫度可為例如20~50℃,浸漬時間可為例如1~60分鐘。In the etching treatment method of the present invention, a dipping method in which the above laminate is immersed in an etching liquid can be used. The type of the etching liquid used in the immersion method is not particularly limited as long as it can etch the metal forming the aluminum layer, but an acidic aqueous solution or an alkaline aqueous solution can be used, for example. As the acidic aqueous solution, nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, acetic acid, and a mixed aqueous solution thereof can be used. The alkaline aqueous solution can be used in the same manner as the above-described alkali developing solution. The concentration may be, for example, 0.01 to 10% by mass. Further, the immersion temperature in the etching liquid may be, for example, 20 to 50 ° C, and the immersion time may be, for example, 1 to 60 minutes.

至於蝕刻液,若以可使用與顯像步驟中使用之顯像液相同溶液之方式選擇光阻層之種類,則可連續的以同一步驟進行顯像步驟及蝕刻步驟,可藉由步驟之簡化而實現製造效率之提高。若在添加於上述光阻層中之黏合樹脂中使用鹼可溶性樹脂,則可使顯像液與蝕刻液成為相同鹼性溶液,藉此以連續同一步驟進行顯像步驟及蝕刻步驟。該情況下,基於上述理由,藉由將層合體浸漬於為蝕刻液且為顯像液之溶液中,進行顯像步驟及蝕刻步驟而較佳。As for the etching liquid, if the type of the photoresist layer can be selected in the same manner as the developing solution used in the developing step, the developing step and the etching step can be continuously performed in the same step, which can be simplified by the steps. And to achieve an increase in manufacturing efficiency. When an alkali-soluble resin is used for the binder resin to be added to the photoresist layer, the developing solution and the etching solution can be made into the same alkaline solution, whereby the development step and the etching step can be carried out in the same step. In this case, for the above reasons, it is preferred to immerse the laminate in a solution which is an etching liquid and is a developing liquid, and to perform a developing step and an etching step.

光阻硬化處理Photoresist hardening

又本發明中在蝕刻步驟中有引起光阻層自鋁層剝離之現象。為防止該狀況,使光阻層硬化,進行強固光阻層與鋁層之接著之處理為有效。至於使光阻層硬化之方法可舉例為將層合體加熱使光阻層硬化之加熱硬化,以及使層合體曝光使光阻層硬化之曝光硬化等。亦即,本發明中在曝光潛像形成步驟之後之顯像步驟之前,或者在顯像步驟之後蝕刻步驟之前進行加熱硬化步驟,或者在顯像步驟之後蝕刻步驟之前進行曝光硬化步驟較佳。Further, in the present invention, there is a phenomenon in which the photoresist layer is peeled off from the aluminum layer in the etching step. In order to prevent this, it is effective to cure the photoresist layer and carry out the subsequent treatment of the strong photoresist layer and the aluminum layer. As a method of hardening the photoresist layer, for example, heat curing of the laminate to heat the photoresist layer, exposure curing of the laminate to expose the photoresist layer, and the like can be exemplified. That is, in the present invention, it is preferable to perform the heat hardening step before the exposure step after the exposure latent image forming step, or before the etching step after the developing step, or the exposure hardening step before the etching step after the developing step.

進行加熱硬化時之溫度通常為100~300℃,較好為120~220℃。硬化時間為2~60分鐘。The temperature at the time of heat hardening is usually 100 to 300 ° C, preferably 120 to 220 ° C. The hardening time is 2 to 60 minutes.

進行曝光硬化時,較好進行紫外線等之輻射線照射(曝光)。至於輻射線照射裝置可使用與上述曝光步驟中使用者相同之裝置。When exposure hardening is performed, it is preferred to irradiate (exposure) radiation such as ultraviolet rays. As for the radiation irradiation device, the same device as the user in the above exposure step can be used.

使光阻層硬化之方法就更有效的防止光阻層自鋁層剝離之方面而言,以加熱硬化者較佳。The method of hardening the photoresist layer is more effective in preventing the photoresist layer from being peeled off from the aluminum layer, and is preferably cured by heat.

(v)其他步驟(v) other steps

對於上述蝕刻步驟中獲得之鋁配線,可依據需要進行光阻層之剝離、黏著層之硬化。For the aluminum wiring obtained in the above etching step, the peeling of the photoresist layer and the hardening of the adhesive layer may be performed as needed.

至於光阻之剝離方法可適當的選擇以臭氧或電漿之灰化而剝離,以氫氧化鈉溶液、碳酸鈉溶液等鹼性水溶液剝離,以單乙醇胺、二甲基亞碸、N-甲基吡咯啶酮溶液等有機溶劑剝離。As for the peeling method of the photoresist, it can be appropriately selected by ashing with ozone or plasma, and stripped with an alkaline aqueous solution such as sodium hydroxide solution or sodium carbonate solution, and monoethanolamine, dimethyl hydrazine, and N-methyl group. The organic solvent such as the pyrrolidone solution is peeled off.

在黏著層上使用熱硬化性樹脂時係進行黏著層之硬化。When the thermosetting resin is used on the adhesive layer, the adhesive layer is hardened.

硬化條件宜在符合黏著層之熱硬化性樹脂特性之加熱條件下進行,但通常為100~300℃,較好為180~300℃。硬化時間為30~120分鐘。加熱方法可適當的選擇加熱板、烘箱等。The curing conditions are preferably carried out under heating under the characteristics of the thermosetting resin of the adhesive layer, but it is usually from 100 to 300 ° C, preferably from 180 to 300 ° C. The hardening time is 30 to 120 minutes. The heating method can appropriately select a heating plate, an oven, or the like.

藉由使黏著層硬化,可改善耐藥品性或因熱循環等之耐久性,而使形成之鋁配線之信賴性提高。By curing the adhesive layer, the chemical resistance or the durability due to thermal cycling or the like can be improved, and the reliability of the formed aluminum wiring can be improved.

鋁配線之用途Use of aluminum wiring

本發明可使用比過去之電鍍法,或為真空製程之蒸鍍法、濺射法更簡易之步驟形成鋁配線。此外,可容易在鋁配線上形成厚膜,獲得電特性及平滑性優異之鋁配線。本發明所得鋁配線之用途可舉例為印刷電路板、多層電路板、多晶模組、LSI、及平面面板顯示器等之鋁配線或反射板。In the present invention, aluminum wiring can be formed using a plating process other than the conventional plating method or a vapor deposition method or a sputtering method in a vacuum process. Further, a thick film can be easily formed on the aluminum wiring, and an aluminum wiring excellent in electrical characteristics and smoothness can be obtained. The use of the aluminum wiring obtained by the present invention can be exemplified by aluminum wiring or a reflecting plate of a printed circuit board, a multilayer circuit board, a polycrystalline module, an LSI, and a flat panel display.

[實施例][Examples]

以下針對本發明之實施例加以說明,但本發明並不受該等之限制。另外,以下之「份」表示「質量份」。又,實施例中之各評價方法說明於下。The embodiments of the present invention are described below, but the present invention is not limited thereto. In addition, the following "parts" means "parts by mass". Further, each evaluation method in the examples will be described below.

[鹼可溶性樹脂之分子量][Molecular weight of alkali-soluble resin]

以東曹股份有限公司製造之凝膠滲透層析儀(GPC)(商品名HLC-802A)測定換算成聚苯乙烯之重量平均分子量。The weight average molecular weight converted to polystyrene was measured by a gel permeation chromatography (GPC) (trade name: HLC-802A) manufactured by Tosoh Corporation.

<實施例1><Example 1> (1)鋁配線形成用轉印薄膜之製作(1) Production of transfer film for forming aluminum wiring

使用100份之甲基丙烯酸苄酯/甲基丙烯酸環己酯/甲基丙烯酸=50/35/15(質量%)共聚物(Mw=30,000)作為鹼可溶性樹脂、33.3份聚丙二醇丙烯酸酯(n≒12,東亞合成製之「M270」)作為感光性單體,及16.6份三羥甲基丙烷EO改質之三丙烯酸酯(n≒2,東亞合成製之「M360」),以及15份之作為光聚合起始劑用之2-苄基-2-二甲胺基-1-(4-嗎啉基苯基)-丁-1-酮(汽巴特用化學品公司製之「IRG369」,使該等在攪拌脫泡裝置中混練後,藉由以三輥分散,調製光阻組成物。以刮板塗佈器,在由聚對苯二甲酸乙二酯薄膜構成之支撐薄膜(寬度200mm,長度30m,厚度38μm)上塗佈該光阻組成物,形成厚度10μm之光阻層。100 parts of benzyl methacrylate/cyclohexyl methacrylate/methacrylic acid=50/35/15 (% by mass) copolymer (Mw=30,000) was used as the alkali-soluble resin, and 33.3 parts of polypropylene glycol acrylate (n) ≒12, "M270" made by East Asia Synthetic as a photosensitive monomer, and 16.6 parts of trimethylolpropane EO modified triacrylate (n≒2, "M360" manufactured by Toagosei), and 15 parts 2-benzyl-2-dimethylamino-1-(4-morpholinylphenyl)-butan-1-one ("IRG369" manufactured by Kabate Chemicals Co., Ltd.) as a photopolymerization initiator After the kneading in the stirring and defoaming device, the photoresist composition was prepared by dispersing in three rolls, and a support film composed of a polyethylene terephthalate film (width 200 mm) by a doctor blade applicator. The photoresist composition was coated on a length of 30 m and a thickness of 38 μm to form a photoresist layer having a thickness of 10 μm.

在該光阻層上層合厚度12μm之鋁箔,形成厚度12μm之鋁層。An aluminum foil having a thickness of 12 μm was laminated on the photoresist layer to form an aluminum layer having a thickness of 12 μm.

使用100份之作為黏合樹脂之甲基丙烯酸正丁酯/甲基丙烯酸苄酯=30/70(質量%)共聚物(Mw=100,000)、50份作為交聯劑之二季戊四醇六丙烯酸酯,及40份作為溶劑之甲氧基丙基乙酸酯,使該等在攪拌脫泡裝置中混練後,藉由以三輥分散,調製黏著組成物。以刮板塗佈器將該黏著組成物塗佈於鋁層上,形成厚度5μm之黏著層。100 parts of n-butyl methacrylate / benzyl methacrylate = 30 / 70 (% by mass) copolymer (Mw = 100,000), 50 parts of dipentaerythritol hexaacrylate as a crosslinking agent, and 40 parts of methoxypropyl acetate as a solvent were prepared by kneading in a stirring and defoaming apparatus, and then dispersing by three rolls to prepare an adhesive composition. The adhesive composition was applied onto an aluminum layer by a blade coater to form an adhesive layer having a thickness of 5 μm.

如上述般製作鋁配線形成用轉印薄膜。A transfer film for forming an aluminum wiring was produced as described above.

(2)鋁配線之形成(2) Formation of aluminum wiring (i)層合步驟(i) lamination step

在表面粗糙度Ra約5000埃之基板上藉由轉印上述鋁配線形成用轉印薄膜,於基板上形成依序層合有黏著層、鋁層及光阻層之層合體。The transfer film for forming an aluminum wiring is transferred onto a substrate having a surface roughness Ra of about 5,000 angstroms, and a laminate in which an adhesive layer, an aluminum layer, and a photoresist layer are laminated in this order is formed on the substrate.

(ii)曝光潛像形成步驟(ii) exposure latent image forming step

相對於上述層合體光阻層,透過線寬60μm、空間寬度60μm之長條狀負型用曝光光罩,以超高壓水銀燈照射i線(波長365nm之紫外線),此時之曝光量以365nm之雷射測定換算成照度為200mJ/cm2With respect to the above-mentioned laminated photoresist layer, a long negative-type exposure mask having a line width of 60 μm and a space width of 60 μm is used to irradiate an i-line (ultraviolet light having a wavelength of 365 nm) with an ultrahigh pressure mercury lamp, and the exposure amount is 365 nm. The laser measurement was converted into an illuminance of 200 mJ/cm 2 .

(iii)顯像步驟(iii) imaging steps

以液溫30℃之0.3質量%碳酸鈉水溶液作為顯像液,以淋洗法對經歷上述曝光潛像形成步驟之層合體進行顯像處理60秒,接著,使用超純水進行水洗。The aqueous solution of 0.3% by mass of sodium carbonate having a liquid temperature of 30 ° C was used as a developing solution, and the laminate subjected to the exposure latent image forming step was subjected to development treatment for 60 seconds by a showering method, followed by washing with ultrapure water.

(iv)蝕刻步驟(iv) etching step

使經歷上述加熱硬化步驟之層合體在液溫25℃、4質量%氫氧化鈉水溶液之蝕刻液中浸漬20分鐘,形成鋁配線。The laminate subjected to the above heat curing step was immersed in an etching solution having a liquid temperature of 25 ° C and a 4 mass % sodium hydroxide aqueous solution for 20 minutes to form an aluminum wiring.

(3)所得鋁配線之評價(3) Evaluation of the obtained aluminum wiring

所得鋁箔鋁配線之電阻率低如3.2μΩ‧cm,又,確認表面有光澤且表面平滑性良好。The obtained aluminum foil aluminum wiring had a low electrical resistivity of 3.2 μΩ·cm, and it was confirmed that the surface was glossy and the surface smoothness was good.

<實施例2><Example 2>

除將黏著組成物改變成下列以外,餘與實施例1相同製作鋁配線形成用轉印薄膜。A transfer film for forming an aluminum wiring was produced in the same manner as in Example 1 except that the adhesive composition was changed to the following.

將50份作為熱硬化性樹脂之環氧樹脂之EPICOTE 1004(Mw=1600,油化蜆殼環氧(股)製)以及50份甲基丙烯酸縮水甘油酯/丙烯腈/甲基丙烯酸甲酯=50/20/30(質量%)共聚物(Mw=110,000)溶解於50份之乙酸丁酯溶纖素中,成為均勻之樹脂溶液。隨後,添加5份之咪唑系化合物之2P4MHZ(四國化成工業(股)製造)作為環氧硬化劑,獲得黏著組成物。50 parts of EPICOTE 1004 (Mw=1600, made by oily clamshell epoxy) and 50 parts of glycidyl methacrylate/acrylonitrile/methyl methacrylate = 50 parts of epoxy resin as thermosetting resin The /20/30 (% by mass) copolymer (Mw = 110,000) was dissolved in 50 parts of butyl ketone acetate to form a uniform resin solution. Subsequently, 5 parts of an imidazole-based compound of 2P4MHZ (manufactured by Shikoku Chemicals Co., Ltd.) was added as an epoxy hardener to obtain an adhesive composition.

使用製作之上述鋁配線形成用薄膜,如實施例1般形成鋁配線。所得鋁箔鋁配線之電阻率低如3.2μΩ‧cm,又,確認表面有光澤且表面平滑性良好。An aluminum wiring was formed as in the first embodiment using the above-described film for forming an aluminum wiring. The obtained aluminum foil aluminum wiring had a low electrical resistivity of 3.2 μΩ·cm, and it was confirmed that the surface was glossy and the surface smoothness was good.

<比較例1><Comparative Example 1> (1)以蒸鍍形成金屬膜(1) Forming a metal film by evaporation

將具有與實施例1、2使用者相同程度之表面粗糙度之基板置於真空蒸鍍機中,使用蒸鍍材料Al,抽真空至10-4 torr,形成2μm之Al蒸鍍膜。由於在平滑性差之基板上直接蒸鍍,因此會有部分未蒸鍍之部分,此外,表面無光澤,確認為表面平滑性為不良之狀態。A substrate having the same surface roughness as that of the users of Examples 1 and 2 was placed in a vacuum vapor deposition machine, and a vapor deposition material Al was used to evacuate to 10 -4 torr to form an Al vapor-deposited film of 2 μm. Since it was directly vapor-deposited on the substrate with poor smoothness, there was a portion which was not vapor-deposited, and the surface was dull, and it was confirmed that the surface smoothness was inferior.

在以蒸鍍形成之上述金屬膜上,以刮板塗佈器塗佈與實施例1同樣之光阻組成物,形成厚度10μm之光阻層。隨後,與實施例1同樣進行曝光、顯像、蝕刻,獲得鋁配線。On the above-mentioned metal film formed by vapor deposition, the same photoresist composition as in Example 1 was applied by a doctor blade to form a photoresist layer having a thickness of 10 μm. Subsequently, exposure, development, and etching were carried out in the same manner as in Example 1 to obtain an aluminum wiring.

所得鋁配線觀察到缺陷,且無光澤,表面平滑性為不良之狀態。The obtained aluminum wiring was observed to be defective, and it was dull, and the surface smoothness was in a bad state.

<比較例2><Comparative Example 2> (1)以鋁糊料形成金屬膜(1) Forming a metal film with an aluminum paste

使用100份片狀鋁粉、20份作為黏合樹脂之甲基丙烯酸正丁酯/甲基丙烯酸2-乙基己酯=40/60(質量%)共聚物(Mw=100,000)、10份作為交聯劑之二季戊四醇六丙烯酸酯及10份作為溶劑之萜品醇,使之經攪拌脫泡裝置混練後,以三輥分散,調製鋁糊料組成物。以刮板塗佈器將所得鋁糊料塗佈於具有與實施例1、2中使用者相同程度之表面粗糙度之基板上,在100℃下乾燥10分鐘。隨後,在280℃下進行30分鐘後烘烤,獲得膜厚10μm之金屬膜。電阻率測定結果為100μΩ‧cm以上之值,為導電性不良之結果。100 parts of flake aluminum powder, 20 parts of n-butyl methacrylate / 2-ethylhexyl methacrylate = 40/60 (% by mass) copolymer (Mw = 100,000), 10 parts as a binder resin The mixture of dipentaerythritol hexaacrylate and 10 parts of terpineol as a solvent was kneaded by a stirring and defoaming device, and then dispersed in three rolls to prepare an aluminum paste composition. The obtained aluminum paste was applied onto a substrate having the same degree of surface roughness as that of the users of Examples 1 and 2 by a blade coater, and dried at 100 ° C for 10 minutes. Subsequently, post-baking was carried out at 280 ° C for 30 minutes to obtain a metal film having a film thickness of 10 μm. The resistivity measurement result was a value of 100 μΩ·‧ cm or more, which was a result of poor conductivity.

Claims (6)

一種鋁配線形成用轉印薄膜,其特徵為在支撐薄膜上依序層合(A)光阻層、(B)鋁層,及(C)黏著層。 A transfer film for forming an aluminum wiring, characterized in that (A) a photoresist layer, (B) an aluminum layer, and (C) an adhesive layer are sequentially laminated on a support film. 如申請專利範圍第1項之鋁配線形成用轉印薄膜,其中上述(B)鋁層係由鋁箔所形成。 The transfer film for forming an aluminum wiring according to the first aspect of the invention, wherein the (B) aluminum layer is formed of an aluminum foil. 如申請專利範圍第1項之鋁配線形成用轉印薄膜,其中上述(C)黏著層為熱硬化性樹脂組成物。 The transfer film for forming an aluminum wiring according to the first aspect of the invention, wherein the (C) adhesive layer is a thermosetting resin composition. 如申請專利範圍第1項之鋁配線形成用轉印薄膜,其中上述(B)鋁層之厚度為1~20μm。 The transfer film for forming an aluminum wiring according to the first aspect of the invention, wherein the (B) aluminum layer has a thickness of 1 to 20 μm. 如申請專利範圍第1項之鋁配線形成用轉印薄膜,其係用於平面面板顯示器。 The transfer film for forming an aluminum wiring according to the first aspect of the patent application is used for a flat panel display. 一種鋁配線之形成方法,其特徵係包含在基板上,將如申請專利範圍第1項之鋁配線形成用轉印薄膜之黏著層貼合於基板上之後,藉由使由(A)光阻層、(B)鋁層及(C)黏著層構成之層轉印於基板上,形成依序層合(C)黏著層、(B)鋁層、(A)光阻層而成之層合體之步驟;使構成該層合體之(A)光阻層進行曝光處理而形成光阻圖型之潛像之步驟;使上述(A)光阻層經顯像處理使光阻圖型顯在化之步驟;以及使上述(B)鋁層經蝕刻處理形成對應於光阻圖型之鋁配線之步驟,其中 上述(A)光阻層的厚度為0.1~40μm、上述(B)鋁層之厚度為1~20μm、上述光阻層係含有感光性單體、光聚合起始劑及黏合樹脂、上述感光性單體之含有比例相對於100質量份之黏合樹脂,為5~200質量份、上述光聚合起始劑之含有比例相對於100質量份之感光性單體,為1~100質量份。 A method for forming an aluminum wiring, comprising: (A) photoresist after bonding an adhesive layer of a transfer film for forming an aluminum wiring according to claim 1 of the invention to a substrate The layer composed of the layer, the (B) aluminum layer and the (C) adhesive layer is transferred onto the substrate to form a laminate of the (C) adhesive layer, the (B) aluminum layer, and the (A) photoresist layer. a step of exposing the (A) photoresist layer constituting the laminate to form a latent image of a resist pattern; and subjecting the (A) photoresist layer to development processing to visualize the photoresist pattern And the step of etching the aluminum layer (B) to form an aluminum wiring corresponding to the photoresist pattern, wherein The (A) photoresist layer has a thickness of 0.1 to 40 μm, the (B) aluminum layer has a thickness of 1 to 20 μm, and the photoresist layer contains a photosensitive monomer, a photopolymerization initiator, and a binder resin, and the above-mentioned photosensitivity. The content ratio of the monomer is 5 to 200 parts by mass based on 100 parts by mass of the binder resin, and the content ratio of the photopolymerization initiator is 1 to 100 parts by mass based on 100 parts by mass of the photosensitive monomer.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030054190A1 (en) * 1997-05-14 2003-03-20 Smith Gordon C. Very ultra thin conductor layers for printed wiring boards
JP2005056269A (en) * 2003-08-06 2005-03-03 Konica Minolta Photo Imaging Inc Ic module, its manufacturing method, ic card, and its manufacturing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030054190A1 (en) * 1997-05-14 2003-03-20 Smith Gordon C. Very ultra thin conductor layers for printed wiring boards
JP2005056269A (en) * 2003-08-06 2005-03-03 Konica Minolta Photo Imaging Inc Ic module, its manufacturing method, ic card, and its manufacturing method

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