TWI425614B - Light emitting diode lighting device - Google Patents

Light emitting diode lighting device Download PDF

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Publication number
TWI425614B
TWI425614B TW100119111A TW100119111A TWI425614B TW I425614 B TWI425614 B TW I425614B TW 100119111 A TW100119111 A TW 100119111A TW 100119111 A TW100119111 A TW 100119111A TW I425614 B TWI425614 B TW I425614B
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Taiwan
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electrode
emitting diode
light
bottom plate
source device
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TW100119111A
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Chinese (zh)
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TW201248832A (en
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Hsin Chiang Lin
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Advanced Optoelectronic Tech
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Description

發光二極體光源裝置 Light-emitting diode light source device

本發明涉及一種照明裝置，尤其係一種發光二極體光源裝置。 The invention relates to a lighting device, in particular to a light emitting diode light source device.

發光二極體係一種節能、環保、長壽命之固體光源，因此近十幾年來對發光二極體技術之研究一直非常活躍，發光二極體也有漸漸取代日光燈、白熾燈等傳統光源之趨勢。在先前技術中，發光二極體光源裝置一般係將發光二極體晶片設置在電路板上，然後利用摻雜螢光粉之封裝膠體封裝該發光二極體，所述發光二極體晶片發出之光激發螢光粉射出到光源外部。但係，由於封裝後之發光二極體晶片與螢光粉層之相對位置係固定不變之，所以發光二極體光源發出之光之色溫也係固定不變之，無法進行調整，不能夠滿足實際需要。 Light-emitting diode system is a kind of energy-saving, environmentally-friendly, long-life solid-state light source. Therefore, the research on light-emitting diode technology has been very active in the past decade, and the light-emitting diode has gradually replaced the traditional light source such as fluorescent lamp and incandescent lamp. In the prior art, the light-emitting diode device generally has a light-emitting diode chip disposed on a circuit board, and then the light-emitting diode is encapsulated by a doped phosphor-containing encapsulant, and the light-emitting diode chip is emitted. The light excites the fluorescent powder to be emitted outside the light source. However, since the relative position of the packaged light-emitting diode chip and the phosphor layer is fixed, the color temperature of the light emitted by the light-emitting diode source is fixed and cannot be adjusted, and cannot be adjusted. Meet the actual needs.

有鑒於此，有必要提供一種可調節色溫之發光二極體光源裝置。 In view of the above, it is necessary to provide a light-emitting diode light source device capable of adjusting color temperature.

一種發光二極體光源裝置，其包括底板、設置在底板上之發光二極體晶片以及與所述底板滑動連接之基座。該基座上設有螢光粉層，該螢光粉層設置在遮擋所述發光二極體晶片出光方向上，並且該螢光粉層分為含有不同顏色螢光粉之多個區域；該底板與所述基座可相對滑動以使所述發光二極體晶片對應螢光粉層之不同 區域，從而改變發光二極體光源裝置之出光色溫。 A light-emitting diode light source device includes a bottom plate, a light-emitting diode chip disposed on the bottom plate, and a base slidably coupled to the bottom plate. a phosphor layer is disposed on the pedestal, the phosphor layer is disposed to block the light emitting direction of the LED chip, and the phosphor layer is divided into a plurality of regions containing different colors of phosphor powder; The bottom plate and the base are slidable relative to each other to make the light emitting diode chip correspond to a different phosphor powder layer The area, thereby changing the color temperature of the light emitted by the light-emitting diode light source device.

上述之發光二極體光源裝置設置一包括多個區域之螢光粉層，每個區域內含有不同之螢光粉，藉由改變發光二極體晶片與螢光粉層之相對位置，使所述發光二極體晶片對應螢光粉層之不同區域，實現對發光二極體光源之出光色溫之調整。 The above-mentioned light-emitting diode light source device is provided with a phosphor powder layer comprising a plurality of regions, each region containing different phosphor powder, by changing the relative positions of the light-emitting diode chip and the phosphor powder layer, The light-emitting diode chip corresponds to different regions of the phosphor powder layer, and the light color temperature of the light-emitting diode light source is adjusted.

10，20‧‧‧發光二極體光源裝置 10,20‧‧‧Lighting diode light source device

100，100a‧‧‧基座 100,100a‧‧‧Base

110‧‧‧頂面 110‧‧‧ top surface

120‧‧‧底面 120‧‧‧ bottom

130‧‧‧端面 130‧‧‧ end face

140‧‧‧側面 140‧‧‧ side

141‧‧‧凸出部 141‧‧‧protrusion

150‧‧‧容置槽 150‧‧‧ accommodating slots

160‧‧‧第一電極 160‧‧‧First electrode

170‧‧‧第二電極 170‧‧‧second electrode

200，200a‧‧‧底板 200,200a‧‧‧floor

210‧‧‧絕緣層 210‧‧‧Insulation

220，220a‧‧‧第三電極 220, 220a‧‧‧ third electrode

230，230a‧‧‧第四電極 230,230a‧‧‧fourth electrode

300‧‧‧發光二極體晶片 300‧‧‧Light Diode Wafer

310‧‧‧焊線 310‧‧‧welding line

400‧‧‧螢光粉層 400‧‧‧Flame powder layer

410‧‧‧第一區域 410‧‧‧First area

420‧‧‧第二區域 420‧‧‧Second area

500‧‧‧封裝層 500‧‧‧Encapsulation layer

圖1為本發明第一實施方式之發光二極體光源裝置之剖面結構示意圖。 1 is a cross-sectional structural view of a light-emitting diode light source device according to a first embodiment of the present invention.

圖2為圖1中發光二極體光源裝置之左側面結構示意圖。 FIG. 2 is a schematic structural view of the left side surface of the light emitting diode light source device of FIG. 1. FIG.

圖3為圖1中發光二極體光源裝置中底板及發光二極體晶片移動到一側之結構示意圖。 3 is a schematic view showing the structure of the bottom plate and the light-emitting diode wafer moved to one side in the light-emitting diode light source device of FIG.

圖4為圖1中發光二極體光源裝置中底板及發光二極體晶片移動到另一側之結構示意圖。 4 is a schematic view showing the structure of the bottom plate and the light-emitting diode wafer moved to the other side in the light-emitting diode light source device of FIG.

圖5為本發明第二實施方式之發光二極體光源裝置之剖面結構示意圖。 FIG. 5 is a cross-sectional structural view of a light emitting diode light source device according to a second embodiment of the present invention.

以下將結合附圖對本發明作進一步之詳細說明。 The invention will be further described in detail below with reference to the accompanying drawings.

實施方式一 Embodiment 1

請參閱圖1以及圖2，本發明一較佳實施方式提供之一種發光二極體光源裝置10包括基座100、設置在所述基座100上之底板200、設置在所述底板200上之發光二極體晶片300以及一遮蓋所述發光 二極體晶片300之螢光粉層400。 Referring to FIG. 1 and FIG. 2 , a light-emitting diode light source device 10 according to a preferred embodiment of the present invention includes a base 100 , a bottom plate 200 disposed on the base 100 , and a bottom plate 200 disposed on the base plate 200 . a light emitting diode chip 300 and a cover for the light The phosphor layer 400 of the diode wafer 300.

所述基座100包括頂面110、底面120、兩個相對之端面130以及兩個相對之側面140。基座100從頂面110沿底面120方向貫通整個基座100開設形成一容置槽150。該容置槽150用於提供發光二極體晶片300以及螢光粉層400之容置空間並設定發光二極體光源裝置10之光場。容置槽150之內表面為傾斜面，該傾斜面自頂面110向底面120方向延伸並沿容置槽150之徑向向內傾斜，使整個容置槽150上寬下窄，呈一漏斗狀。優選地，容置槽150之內表面還塗敷有反光材料。 The base 100 includes a top surface 110, a bottom surface 120, two opposite end surfaces 130, and two opposite side surfaces 140. The susceptor 100 defines a receiving groove 150 through the pedestal 100 from the top surface 110 along the bottom surface 120. The accommodating groove 150 is configured to provide a accommodating space of the illuminating diode 300 and the phosphor layer 400 and set a light field of the illuminating diode device 10 . The inner surface of the accommodating groove 150 is an inclined surface extending from the top surface 110 toward the bottom surface 120 and inclined inwardly along the radial direction of the accommodating groove 150, so that the entire accommodating groove 150 is narrow and narrow, and is a funnel. shape. Preferably, the inner surface of the receiving groove 150 is also coated with a reflective material.

該基座100之底面120還設置有相互間隔之第一電極160以及第二電極170，該第一電極160以及第二電極170分別形成在容置槽150之兩側，第一電極160以及第二電極170之一端分別延伸到容置槽150之底部，另一端分別從端面130延伸到基座100外，用於與外部電路連接。基座100之兩個側面140還分別向兩側延伸形成有凸出部141。 The bottom surface 120 of the susceptor 100 is further provided with a first electrode 160 and a second electrode 170 which are spaced apart from each other. The first electrode 160 and the second electrode 170 are respectively formed on two sides of the accommodating groove 150, and the first electrode 160 and the first electrode One end of the two electrodes 170 respectively extends to the bottom of the accommodating groove 150, and the other end extends from the end surface 130 to the outside of the susceptor 100, respectively, for connection with an external circuit. The two side faces 140 of the base 100 are further extended with two sides to form a protruding portion 141.

所述底板200與所述基座100活動連接，其包括一絕緣層210以及相互間隔形成在該絕緣層210表面上之第三電極220以及第四電極230。底板200與基座100之兩個側面140相對應之兩端分別向上延伸形成設有滑槽之導軌240，該導軌240活動卡合在基座100之凸出部141上，使底板200可相對基座100沿垂直基座100之端面130方向上滑動，並且在底板200滑動之過程中，基座100之第一電極160與底板200之第三電極220保持電接觸，基座100之第二電極170與底板200之第四電極230保持電接觸。 The bottom plate 200 is movably connected to the base 100 and includes an insulating layer 210 and third electrodes 220 and fourth electrodes 230 spaced apart from each other on the surface of the insulating layer 210. The two ends of the bottom plate 200 corresponding to the two side faces 140 of the base 100 respectively extend upward to form a guide rail 240 having a sliding slot. The guide rail 240 is movably engaged with the protruding portion 141 of the base 100, so that the bottom plate 200 can be oppositely The susceptor 100 slides in the direction of the end surface 130 of the vertical pedestal 100, and during the sliding of the bottom plate 200, the first electrode 160 of the susceptor 100 maintains electrical contact with the third electrode 220 of the bottom plate 200, and the second of the pedestal 100 Electrode 170 is in electrical contact with fourth electrode 230 of substrate 200.

可以理解之係，所述底板200與基座100之連接方式並不限定於本實施方式中提供之連接方式，還可以係基座100之底面設置凹槽，底板200向上設置凸起部以活動容置於基座100中。 It can be understood that the connection manner between the bottom plate 200 and the base 100 is not limited to the connection manner provided in the embodiment, and the bottom surface of the base 100 may be provided with a groove, and the bottom plate 200 is provided with a convex portion upward to be movable. It is housed in the base 100.

所述發光二極體晶片300設置在底板200上，並容置在容置槽150中。發光二極體晶片300藉由焊線310分別與底板200上之第三電極220以及第四電極230連接。所述發光二極體晶片300上還包覆有一層封裝層500，該封裝層500為一透明封膠樹脂，用於保護發光二極體晶片300免受灰塵、水氣等影響。該封裝層500包覆部分第三電極220、部分第四電極230、發光二極體晶片300以及焊線310。當底板200移動時，發光二極體晶片300可隨著底板200在容置槽150之底面上沿水平方向移動。 The LED chip 300 is disposed on the bottom plate 200 and received in the receiving groove 150. The LED wafers 300 are respectively connected to the third electrode 220 and the fourth electrode 230 on the bottom plate 200 by bonding wires 310. The LED chip 300 is further coated with an encapsulation layer 500. The encapsulation layer 500 is a transparent encapsulant for protecting the LED chip 300 from dust, moisture and the like. The encapsulation layer 500 covers a portion of the third electrode 220, a portion of the fourth electrode 230, the light emitting diode wafer 300, and the bonding wires 310. When the bottom plate 200 moves, the light emitting diode chip 300 can move in the horizontal direction along the bottom plate 200 on the bottom surface of the accommodating groove 150.

可以理解之係，所述發光二極體晶片300還可以採用覆晶封裝之方式設置在底板200上。 It can be understood that the LED wafer 300 can also be disposed on the substrate 200 in a flip chip package.

所述螢光粉層400設置在容置槽150上，封閉容置槽150之頂部開口，遮擋在發光二極體晶片300之出光光路上，其由參雜有螢光粉之封膠樹脂製成，該螢光粉可選自釔鋁石榴石、鋱釔鋁石榴石及矽酸鹽中之一種或幾種之組合。螢光粉層400分為位於螢光粉層400中心之第一區域410以及圍繞第一區域410之第二區域420。第一區域410內部含有第一螢光粉，可將發光二極體晶片300發出之光線轉換為第一種波長之光線。第二區域420內部含有第二螢光粉，可將發光二極體晶片300發出之光線轉換為第二種波長之光線。在本實施方式中，第一區域410含有黃色螢光粉，第二區域420含有紅色與綠色螢光粉。 The phosphor layer 400 is disposed on the accommodating groove 150, and closes the top opening of the accommodating groove 150 to block the light path of the illuminating diode chip 300, which is made of a sealing resin mixed with fluorescent powder. The phosphor powder may be selected from one or a combination of yttrium aluminum garnet, yttrium aluminum garnet and silicate. The phosphor layer 400 is divided into a first region 410 located at the center of the phosphor layer 400 and a second region 420 surrounding the first region 410. The first region 410 contains a first phosphor powder, which converts light emitted by the LED chip 300 into light of a first wavelength. The second region 420 contains a second phosphor powder, which converts the light emitted by the LED chip 300 into light of a second wavelength. In the present embodiment, the first region 410 contains yellow phosphor powder, and the second region 420 contains red and green phosphor powder.

可以理解之係，第一區域410以及第二區域420之設置方式並不限定於本實施方式中之設置方式，也可以採用第一區域410和第二區域420相互平行並交錯設置。另外區域之數量也並不限定於本實施方式中之兩個區域，也可以根據實際需要，設置更多之含有不同螢光粉之區域。 It can be understood that the arrangement manner of the first region 410 and the second region 420 is not limited to the arrangement mode in the embodiment, and the first region 410 and the second region 420 may be parallel and alternately arranged. The number of the other regions is not limited to the two regions in the present embodiment, and more regions containing different phosphors may be provided according to actual needs.

請參閱圖3以及圖4，在初始階段，所述發光二極體晶片300位於容置槽150底面之中心，發光二極體晶片300之正向光照射到螢光粉層400中部之第一區域410，因此發光二極體晶片300發出之光主要激發第一區域410中之螢光粉，從而產生第一種色溫之光。當需要調解發光二極體光源裝置10之出光色溫時，滑動所述底板200，使所述發光二極體晶片300位於容置槽150底面之邊緣，從而發光二極體晶片300之正向光照射螢光粉層400之第二區域420，因此發光二極體晶片300發出之光主要激發第二區域420中之螢光粉，從而產生第二種色溫之光。因此，藉由滑動底板200可改變發光二極體晶片300與螢光粉層400之相對位置，使發光二極體晶片300對應螢光粉層400之不同螢光粉部分，進而使所述發光二極體光源裝置10產生不同色溫之光。 Referring to FIG. 3 and FIG. 4, in the initial stage, the LED chip 300 is located at the center of the bottom surface of the receiving groove 150, and the positive light of the LED chip 300 is irradiated to the first portion of the phosphor layer 400. The region 410, such that the light emitted by the LED chip 300 primarily excites the phosphor in the first region 410, thereby producing light of the first color temperature. When it is necessary to adjust the color temperature of the light-emitting diode light source device 10, the bottom plate 200 is slid so that the light-emitting diode wafer 300 is located at the edge of the bottom surface of the accommodating groove 150, thereby illuminating the positive light of the LED chip 300. The second region 420 of the phosphor layer 400 is illuminated such that the light emitted by the LED array 300 primarily excites the phosphor in the second region 420 to produce a second color temperature light. Therefore, the relative position of the LED substrate 300 and the phosphor layer 400 can be changed by sliding the bottom plate 200, so that the LED array 300 corresponds to different phosphor portions of the phosphor layer 400, thereby enabling the illumination. The diode light source device 10 generates light of different color temperatures.

實施方式二 Embodiment 2

請參閱圖5，本發明第二實施方式提供之發光二極體光源裝置20與第一實施方式提供之發光二極體光源裝置10之區別在於：基座100a之底面上沒有形成電極，底板200a上之第三電極220a以及第四電極230a之一端分別延伸到底板200a外，用於與外部電路連接。所述基座100a活動設置在底板200a上，其可相對底板200a可滑 動，從而調節螢光粉層400與底板200a上之發光二極體晶片300之相對位置。 Referring to FIG. 5, the LED light source device 20 according to the second embodiment of the present invention is different from the LED light source device 10 of the first embodiment in that no electrode is formed on the bottom surface of the susceptor 100a, and the bottom plate 200a One of the upper third electrode 220a and the fourth electrode 230a extends outside the bottom plate 200a for connection with an external circuit. The base 100a is movably disposed on the bottom plate 200a, which is slidable relative to the bottom plate 200a To adjust the relative position of the phosphor layer 400 to the LED array 300 on the substrate 200a.

相較於先前技術，本發明之發光二極體光源裝置設置一包括多個區域之螢光粉層，每個區域內含有不同之螢光粉，藉由改變發光二極體晶片與螢光粉層之相對位置，使所述發光二極體晶片對應螢光粉層之不同區域，實現對發光二極體光源之出光色溫之調整。 Compared with the prior art, the LED light source device of the present invention is provided with a phosphor layer comprising a plurality of regions, each region containing a different phosphor powder, by changing the LED chip and the phosphor powder. The relative positions of the layers are such that the light-emitting diode wafers correspond to different regions of the phosphor powder layer to achieve adjustment of the color temperature of the light-emitting diode light source.

另外，本領域技術人員還可在本發明精神內做其他變化，當然，該等依據本發明精神所做之變化，都應包含在本發明所要求保護之範圍之內。 In addition, those skilled in the art can make other changes in the spirit of the present invention. Of course, such changes in accordance with the spirit of the present invention should be included in the scope of the present invention.

10‧‧‧發光二極體光源裝置 10‧‧‧Lighting diode light source device

100‧‧‧基座 100‧‧‧Base

110‧‧‧頂面 110‧‧‧ top surface

120‧‧‧底面 120‧‧‧ bottom

130‧‧‧端面 130‧‧‧ end face

150‧‧‧容置槽 150‧‧‧ accommodating slots

160‧‧‧第一電極 160‧‧‧First electrode

170‧‧‧第二電極 170‧‧‧second electrode

200‧‧‧底板 200‧‧‧floor

210‧‧‧絕緣層 210‧‧‧Insulation

220‧‧‧第三電極 220‧‧‧ third electrode

230‧‧‧第四電極 230‧‧‧fourth electrode

300‧‧‧發光二極體晶片 300‧‧‧Light Diode Wafer

310‧‧‧焊線 310‧‧‧welding line

400‧‧‧螢光粉層 400‧‧‧Flame powder layer

410‧‧‧第一區域 410‧‧‧First area

420‧‧‧第二區域 420‧‧‧Second area

500‧‧‧封裝層 500‧‧‧Encapsulation layer

Claims (9)

一種發光二極體光源裝置，其包括底板及設置在底板上之發光二極體晶片，其改進在於：該發光二極體光源裝置還包括與所述底板滑動連接之基座，該基座上設有螢光粉層，該螢光粉層設置在遮擋所述發光二極體晶片出光方向上，並且該螢光粉層分為含有不同顏色螢光粉之多個區域，所述基座底面上設置有相互間隔之第一電極及第二電極；所述底板上形成有第三電極及第四電極，所述發光二極體晶片分別與所述第三電極及第四電極電連接，所述第一電極與第三電極電接觸，第二電極與第四電極電接觸，該底板與所述基座可相對滑動以使所述發光二極體晶片對應螢光粉層之不同區域，從而改變發光二極體光源裝置之出光色溫。 A light-emitting diode light source device comprising a bottom plate and a light-emitting diode chip disposed on the bottom plate, wherein the light-emitting diode light source device further comprises a base slidably connected to the bottom plate, the base a phosphor layer is disposed, the phosphor layer is disposed to block the light emitting direction of the LED chip, and the phosphor layer is divided into a plurality of regions containing different colors of phosphor powder, the bottom surface of the base a first electrode and a second electrode are disposed on the bottom surface; a third electrode and a fourth electrode are formed on the bottom plate, and the light emitting diode chip is electrically connected to the third electrode and the fourth electrode, respectively The first electrode is in electrical contact with the third electrode, and the second electrode is in electrical contact with the fourth electrode, and the bottom plate and the base are slidable relative to each other, so that the light emitting diode chip corresponds to different regions of the phosphor powder layer, thereby Changing the color temperature of the light emitted by the light emitting diode device. 如申請專利範圍第1項所述之發光二極體光源裝置，其中：所述基座上形成一容置槽以收容所述發光二極體晶片以及所述螢光粉層，所述發光二極體晶片上還包覆有一層封裝層，所述螢光粉層設置在該封裝層之外部，與所述發光二極體晶片間隔設置並且置於該發光二極體晶片上方。 The illuminating diode light source device of claim 1, wherein: the accommodating groove is formed on the susceptor to receive the illuminating diode chip and the phosphor powder layer, The polar body wafer is further coated with an encapsulation layer, and the phosphor powder layer is disposed outside the encapsulation layer, spaced apart from the light emitting diode wafer and placed above the LED body. 如申請專利範圍第2項所述之發光二極體光源裝置，其中：所述基座包括頂面及底面，所述容置槽由頂面沿底面方向貫通整個基座開設形成。 The illuminating diode light source device of claim 2, wherein the pedestal comprises a top surface and a bottom surface, and the accommodating groove is formed by the top surface extending through the entire pedestal in the bottom direction. 如申請專利範圍第3項所述之發光二極體光源裝置，其中：所述容置槽之內表面為傾斜面，該傾斜面自基座頂面向基座底面方向延伸並向發光二極體晶片方向傾斜，容置槽之內表面還塗敷有反 光材料。 The illuminating diode light source device of claim 3, wherein the inner surface of the accommodating groove is an inclined surface extending from the top of the pedestal toward the bottom surface of the pedestal and toward the light emitting diode The direction of the wafer is inclined, and the inner surface of the receiving groove is also coated with a reverse Light material. 如申請專利範圍第1項所述之發光二極體光源裝置，其中：所述基座之第一電極及第二電極之一端分別延伸到基座兩側外，用於與外部電路連接。 The illuminating diode light source device of claim 1, wherein the first electrode and the second electrode of the pedestal extend to both sides of the pedestal for connection with an external circuit. 如申請專利範圍第1項所述之發光二極體光源裝置，其中：所述底板上之第三電極及第四電極之一端分別延伸到底板外，用於與外部電路連接。 The illuminating diode light source device of claim 1, wherein one of the third electrode and the fourth electrode on the bottom plate extends outside the bottom plate for connection with an external circuit. 如申請專利範圍第1項所述之發光二極體光源裝置，其中：所述基座之兩個側面分別向兩側延伸形成有凸出部，所述底板對應所述凸出部形成有導軌，所述基座之凸出部活動卡合在所述導軌內。 The illuminating diode light source device of claim 1, wherein the two sides of the pedestal are respectively extended with two sides to form a protruding portion, and the bottom plate is formed with a guiding rail corresponding to the protruding portion. The protrusion of the base is movably engaged in the guide rail. 如申請專利範圍第1項所述之發光二極體光源裝置，其中：所述基座之底面兩側設有凹槽，所述底板對應所述基座之凹槽形成凸起部，所述底板之凸起部活動卡合在所述基座之凹槽內。 The illuminating diode light source device of claim 1, wherein: the bottom surface of the pedestal is provided with a groove on both sides thereof, and the bottom plate forms a convex portion corresponding to the groove of the pedestal, The raised portion of the bottom plate is movably engaged in the recess of the base. 如申請專利範圍第1項所述之發光二極體光源裝置，其中：所述螢光粉層分為第一區域和第二區域，所述第一區域位於螢光粉層中部，所述第二區域圍繞所述第一區域。 The light-emitting diode light source device of claim 1, wherein: the phosphor layer is divided into a first region and a second region, wherein the first region is located in a middle portion of the phosphor layer, Two regions surround the first region.
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