TWI421645B - Patterning method and stack structure for patterning - Google Patents

Description

Patterned method and stacked structure for patterning

The present invention relates to a method of patterning and a stacked structure for patterning.

At present, in the process of manufacturing liquid crystal displays (LCDs), the TFT array process is still a process of vacuum coating, yellow light development, and etching in the conventional integrated circuit (IC) industry. With the increasing size of the panel, the vacuum coating method will have the problem of high cost and low yield of the process equipment. Compared with the high cost required by the traditional physical vapor deposition method, inkjet printing (Ink-Jet Printing) , IJP) process has recently attracted considerable attention.

Inkjet printing technology has the following advantages in the cost of flat panel display (FPD) process: (1) Significant savings in traditional thin film transistor liquid crystal display (TFT LCD) processes such as thin film deposition, yellow light, lithography, etching Huge amount of equipment and maintenance costs. (2) IJP has a patterning ability (about several tens of micrometers) and a better material utilization ratio than a spin-coating process. (3) The traditional yellow light lithography process needs to change the design of a complete mask when changing the product design. The inkjet printing technology only needs to adjust the program and control parameters (Recipe) to meet the printing requirements of different products.

Although the inkjet printing technology has the above advantages compared with the conventional process, its patterning ability is only about 30 to 60 micrometers or more, which cannot meet the requirements of high resolution.

The present invention provides a method of patterning that uses a high energy beam to increase the resolution of the pattern.

The present invention provides a patterning method for depositing an unpatterned overlay layer on a film to be melted by a high energy beam, thereby slowing the effect of high energy beam energy on the film material to improve the film. Type, flatness and pattern accuracy.

The present invention provides a stacked structure for high energy beam patterning that mitigates the effects of high energy beam energy on the film material to improve film flatness and pattern accuracy.

The invention provides a method for patterning, comprising providing a first film to be patterned on a substrate, and then forming an unpatterned cover layer on the first film, the material of the unpatterned cover layer and the first The material of a film is different. Thereafter, the unpatterned cover layer and the first film are melted by the beam to form a patterned cover layer and the patterned first film. Thereafter, the patterned cover layer is selectively removed.

The invention further proposes a stack structure to be patterned, comprising a first film and an unpatterned cover layer. The first film is a layer to be patterned. The unpatterned cover layer covers the first film and has a material different from that of the first film.

The patterning method of the present invention uses a high energy beam to increase the resolution of the pattern. Moreover, the present invention provides a stacked structure for high energy beam patterning, depositing an unpatterned overlay layer on a film to be melted by a high energy beam, thereby slowing down the high energy beam energy to the film. The influence of the material to improve the shape, flatness and pattern accuracy of the film.

The above described features and advantages of the present invention will be more apparent from the following description.

Inkjet printing technology can be used with high energy beams such as laser's Ablation technology to achieve the patterning of metal wires to improve the resolution of the pattern. However, when the film is patterned by a laser melt-dissipation process, the high energy of the laser causes a film curling phenomenon at the edge of the film, which changes the line width of the film and derivates the roughness. Even the problem of decreased adhesion. If the laser energy is lowered, there is a concern that the film cannot be removed.

The invention deposits a cover layer on a film which is to be melted by a high-energy beam, so as to slow down the influence of high-energy beam energy on the film material, to improve the flatness and pattern accuracy of the film, and to provide good A patterned film of a film morphology.

1A through 1C-1 illustrate a method of patterning in accordance with an embodiment of the invention. 2A through 2C-1 illustrate a method of patterning in accordance with another embodiment of the present invention.

Referring to FIGS. 1A and 2A, the patterning method of the present embodiment is to first form the film 12 to be patterned on the substrate 10. Next, a cover layer 14 is deposited on the film 12.

The material of the substrate 10 is, for example, glass, ruthenium, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polybutylene terephthalate (DM), Polyimine (PI), polyphenylene ether (PES), or the foregoing Combination of materials.

The film 12 includes a conductive layer, an insulating layer, a semiconductor layer, or a composite material layer or a stacked layer composed of at least the foregoing two materials. The material of the conductive layer contains at least Au, Ag, Cu, Ni, Cr, Ti, Al, Pt, Pd metal or an alloy thereof. The material of the insulating layer includes an inorganic material, an organic material, or a combination thereof. The inorganic material includes at least SiN _x , SiO ₂ , Al ₂ O ₃ , Al ₂ O ₃ , Ta ₂ O ₅ , TiO ₂ , ZrO ₂ , HfO ₂ , wherein _X in SiN _x represents any possible value; These include benzocyclobutene, organodecane, polyimide or decanoate. The material of the semiconductor layer includes at least Si, Ge, GaAs, CdTe, ZnO, ZnSnO, InZnO, InGaZnO, InGaO or other similar metal oxide semiconductor materials.

Film 12 can be an unpatterned film, as shown in Figure 1A, or a film that has been patterned, as shown in Figure 2A.

Referring to FIG. 1A, in an embodiment, the film 12 is, for example, a physical vapor deposition, a chemical vapor deposition, a solution-processed deposition, or an electroplating deposition. (Electroplating deposition), electroless plating deposition, ink jet printing deposition, or other similar methods of unpatterned film.

Referring to FIG. 2A, in another embodiment, the film 12 is formed by inkjet printing to form a patterned film directly at a low temperature to reduce the cost of the material and the cost of the machine equipment. Of course, the above film 12 can also be formed by other deposition processes that can be directly patterned. The patterned film. Alternatively, the unpatterned layer can also be formed by physical vapor deposition, chemical vapor deposition, solution process deposition, electroplating deposition, electroless deposition or ink jet printing, and then patterned first by any known patterning process. .

The cover layer 14 described above may be a single layer or a multilayer structure. The layers of the cover layer 14 of the multilayer structure may be composed of a single material or a plurality of materials. The material of the cover layer 14 is different from the material of the film. The cover layer 14 includes a photoresist layer, a conductive layer, an insulating layer, a semiconductor layer, or a composite material layer or a stacked layer composed of at least the foregoing two material layers. The photoresist layer can be a positive photoresist layer or a negative photoresist layer. The material of the conductive layer contains at least Au, Ag, Cu, Ni, Cr, Ti, Al, Pt, Pd metal or an alloy thereof. The material of the insulating layer includes at least an inorganic material, an organic material, or a combination thereof. The inorganic material includes at least SiN _x , SiO ₂ , Al ₂ O ₃ , Al ₂ O ₃ , Ta ₂ O ₅ , TiO ₂ , ZrO ₂ , HfO ₂ ; the organic material includes at least Benzocyclobutene (BCB), organic A siloxane, a polyimine (PI) or a silsequioxane. The material of the semiconductor layer includes at least Si, Ge, GaAs, CdTe, ZnO, ZnSnO, InZnO, InGaZnO, InGaO or other similar metal oxide semiconductor materials. The formation method of the above coating layer is, for example, physical vapor deposition, chemical vapor deposition, solution process deposition, electroplating deposition, electroless deposition, ink jet printing deposition, or the like.

Thereafter, the cover layer 14 and the film 12 are melted by the high-energy beam 16 through the mask 30 to form a patterned cover layer 14a and a patterned film 12a, as shown in FIGS. 1B and 2B.

The high-energy beam 16 refers to a light beam having a wavelength of 1 nm or more. For example, a light beam having a wavelength of from 1 nm to 20,000 nm, including a laser such as a gas laser, a liquid laser, a solid laser or a semiconductor laser. The gas laser is, for example, an excimer laser, such as ArF (193 nm), KrF (248 nm), XeCl (308 nm) or XeCl (351 nm); nitrogen laser (337 nm); Argon laser (488 nm, 514 nm); 氦氖 laser (632.8 nm) or carbon dioxide laser (10600 nm). Liquid lasers such as dye lasers (400~700 nm). Solid state lasers such as Nd:YAG lasers (1064 nm). The wavelength of the semiconductor laser is, for example, 390 to 1550 nm. The wavelength of the laser used is related to the material and thickness of the film and cover layer to be melted, and may be a specific wavelength, or a range of wavelengths, for example, 248 nm, or 150 nm to 400 nm. The energy of the laser used is related to the material and thickness of the film 12 and the cover layer 14 to be melted, for example, 10 to 100,000 angstroms. In one embodiment, the film 12 is a silver metal film having a thickness of 100 to 300 nm, and the cover layer 14 is a photoresist material having a thickness of 1000 to 2000 nm. The high energy beam has a wavelength of 248 nm and an energy of 300 m. Joules per square centimeter, the number of shots is 10 times. In another embodiment, the film 12 is a silver metal film having a thickness of 150 to 250 nm, and the cover layer 14 is an organic insulating material having a thickness of 200 to 300 nm. The high energy beam has a wavelength of 248 nm and an energy of 400. Millijoules per square centimeter, the number of shots is one. When the film 12 is a patterned film having a first pattern, the high energy beam melting process performed thereafter can cause the formed patterned film 12a to have a second pattern. The melt loss process may be only one trimming process such that the formed second pattern is similar in shape to the first pattern but different in size. Of course, the melt loss system The process may also cause the formed second pattern to be completely different in shape from the first pattern.

The use of high-energy beams such as lasers to melt the film simplifies the patterning process without the need for complicated exposure and development processes. The thermal effect of the high-energy beam on the film 12 during the melt loss can be mitigated by covering the cover layer 14 on the film 12 to slow down the lift and improve the flatness and pattern of the patterned film 12a. Sex.

Referring to FIGS. 1C and 2C, in an embodiment, the patterned cap layer 14a may be removed after the high energy beam melting process is performed. In another embodiment, referring to FIGS. 1C-1 and 2C-1, after the high energy beam melting process is performed, the patterned cap layer 14a is still retained, and the subsequent process is directly continued. Subsequent processes include, for example, forming another layer of film 18 on the substrate 10, such as a conductive layer, an insulating layer, a semiconductor layer, or a composite material layer or a stacked layer of at least two of the foregoing films to cover the patterned cover layer 14a. After and after forming another layer of film 18, the patterned cap layer 14a is still retained, as shown in Figures 1C-1 and 2C-1.

The method of the present invention can be applied to various fields. The following description is given for the application of the thin film transistor and the solar cell. However, the present invention is not limited thereto.

3A to 3C are cross-sectional views showing a method of fabricating a contact-type thin film transistor of a lower gate structure according to an embodiment of the invention.

Referring to FIG. 3A, the method for fabricating the thin film transistor of the present embodiment first forms the gate 112 on the substrate 110.

Thereafter, a cover layer 114 is formed over the substrate 110 to cover the gate 112.

Then, the high-energy beam 116, such as a quasi-molecular laser, is passed through the reticle 130 to melt the cover layer 114 and the gate 112, and trimming is performed to form the patterned cap layer 114a and the re-patterned gate 112a, as shown in FIG. 3B. Shown. In one embodiment, the laser used is, for example, an excimer laser having a wavelength of 248 nm.

Thereafter, referring to FIG. 3C, a dielectric layer 118 is formed on the substrate 110. The dielectric layer 118 and the patterned cap layer 114a together form an insulating layer 118.

Then, a source contact layer 120 and a drain contact layer 122 are formed on the dielectric layer 118.

Thereafter, an active layer 126 is formed in the gap 124 between the source contact layer 120 and the gate contact layer 122, and is electrically coupled to the source contact layer 120 and the gate contact layer 122 to complete the lower gate structure contact. Fabrication of a thin film transistor 100A of the formula (BGBC).

The above is explained in the following fabrication of the contact type thin film transistor 100A in the gate structure. However, the present invention is not limited thereto, and the lower gate structure contact type (BGTC) and the upper gate structure contact type (TGTC) are not limited thereto. The contact transistor (TGBC) thin film transistor of the upper gate structure can also be fabricated by a method similar to the contact method of the lower gate structure described above.

3A-1 to 3C-1 are schematic cross-sectional views showing a method of fabricating a contact-type thin film transistor of a lower gate structure according to an embodiment of the invention.

Referring to FIGS. 3A-1 and 3B-1, a gate 112 is formed on the substrate 110. Thereafter, a cap layer 114 is formed over the substrate 110 to cover the gate 112. Next, the high-energy beam 116, such as a quasi-molecular laser, is passed through the mask 130 to melt the cover layer 114 and the gate 112, and trimming is performed to form the patterned cap layer 114a and the patterned gate 112a.

Thereafter, referring to FIG. 3C-1, a dielectric layer 118 is formed on the substrate 110. The dielectric layer 118 and the patterned cap layer 114a together form an insulating layer 118. An active layer 126 is then formed over the dielectric layer 118. Thereafter, the source contact layer 120 and the gate contact layer 122 are formed on the active layer 126 to complete the fabrication of the contact-type thin film transistor 100B on the lower gate structure.

3A-2 to 3C-2 are schematic cross-sectional views showing a method of fabricating a contact-type thin film transistor on an upper gate structure according to an embodiment of the invention.

Referring to FIG. 3A-2, an active layer 126 is formed on the substrate 110. Thereafter, a source contact layer 120 and a drain contact layer 122 are formed on the active layer 126. Next, a dielectric layer 118 is formed on the substrate 110 to cover the source contact layer 120 and the gate contact layer 122.

Thereafter, referring to FIG. 3B-2, a gate 112 is formed on the dielectric layer 118. Then, a cap layer 114 is formed over the substrate 110 to cover the gate 112. Then, the high-energy beam 116, such as the excimer laser, is passed through the reticle 130 to melt the cover layer 114 and the gate 112, and trimming is performed to form the patterned cap layer 114a and the re-patterned gate 112a to complete the gate. The fabrication of the contact-type thin film transistor 100C is as shown in Fig. 3C-2.

3A-3 to 3C-3 are schematic cross-sectional views showing a method of fabricating a contact-type thin film transistor with an upper gate structure according to an embodiment of the invention.

Referring to FIG. 3A-3, a source contact layer 120 and a gate contact layer 122 are formed on the substrate 110. Thereafter, an active layer 126 is formed on the substrate 110 to cover the source contact layer 120 and the drain contact layer 122. Next, a dielectric layer 118 is formed over the active layer 126.

Thereafter, referring to FIG. 3B-3, a gate 112 is formed on the dielectric layer 118. Then, a cap layer 114 is formed over the substrate 110 to cover the gate 112. Then, the high-energy beam 116, such as the excimer laser, is passed through the reticle 130 to melt the cover layer 114 and the gate 112, and trimming is performed to form the patterned cap layer 114a and the re-patterned gate 112a to complete the gate. The fabrication of the contact-type thin film transistor 100D under the pole structure is shown in Fig. 3C-3.

The substrate 110 may be a hard substrate or a flexible substrate. The material of the hard substrate is, for example, glass, quartz or germanium wafer. The material of the flexible substrate may be plastic such as acrylic, PET, PEN, PCT, PI, PES, metal foil or paper or a combination of the foregoing.

The material of the gate 112 includes a conductive layer such as a metal, a doped polysilicon or a transparent conductive oxide. The metal is, for example, gold, silver, aluminum, copper, chromium, nickel, titanium, platinum, palladium or an alloy of the foregoing. A transparent conductive oxide such as indium tin oxide or the like. The method of forming the gate 112 is, for example, an inkjet process, and directly forms a patterned conductive layer as the gate 112.

The cover layer 114 may be a single layer or a multilayer structure. The layers in the cover layer 114 may be composed of a single material or a plurality of materials. The material of the cover layer 114 includes an insulating layer. The material of the insulating layer is, for example, the inorganic material, the organic material or a combination thereof described in the above embodiments, and details are not described herein again. The thickness of the cover layer 114 is, for example, 10 to 100,000 angstroms.

The dielectric layer 118 may be a single layer or a multilayer structure. The dielectric layer 118 can be an organic material such as an organic material having a dielectric constant of less than 4. In addition, the material of each layer in the dielectric layer 118 may be composed of a single organic material, a plurality of organic materials, or an organic material and an inorganic material. The material of the dielectric layer 118 may be a photosensitive material or a non-photosensitive material, such as polyamidamine (PI), polyvinyl phenol, polystyrene (PS), acrylic or epoxy resin. Of course, the patterned cap layer 114a may be removed prior to forming the dielectric layer 118, if desired.

The method of forming the source contact layer 120 and the gate contact layer 122 is, for example, forming a layer of a conductive material and then patterning it. The material of the conductive material layer is, for example, a metal such as gold, silver, aluminum, copper, chromium, nickel, titanium, platinum, palladium or an alloy of the foregoing. The method for forming the conductive material layer includes performing a physical vapor deposition process, such as a sputtering process or an evaporation process. In another embodiment, the method of forming the source contact layer 120 and the gate contact layer 122 may also directly form a patterned conductive layer, for example, by an inkjet process.

The active layer 126 may be patterned or unpatterned, and the material thereof is, for example, a semiconductor or an organic semiconductor. The semiconductor is, for example, amorphous germanium, polycrystalline germanium, Ge, GaAs, CdTe and ZnO, InZnO, ZnSnO, InGaZnO, InGaO or other similar metal oxide semiconductor materials. The organic semiconductor includes an N-type or P-type organic small molecule, an organic polymer, or a mixture of an organic small molecule and an organic polymer. The material of the organic small molecule is, for example, pentacene or Tetracene. The organic semiconductor polymer is, for example, poly(3-hexane)thiophene (Poly-(3-hexylthiophene), P3HT).

The above embodiment is described by taking the high-energy beam melting gate 112 as an example. However, the invention is not limited thereto, and may be applied to each material layer described above, for example, a source, if necessary. The contact layer 120, the drain contact layer 122 or the active layer 126.

4A-4C are schematic cross-sectional views showing a method of fabricating a solar cell according to another embodiment of the invention.

Referring to FIG. 4A, a transparent electrode (front electrode) 202, a photoelectric conversion layer, and an anti-reflection layer 210 are sequentially formed on the transparent substrate 200. The transparent substrate 200 may be a hard substrate or a flexible substrate. The hard substrate is, for example, a curtain glass substrate as a building. The flexible substrate is, for example, a plastic substrate. The transparent electrode 202 is used as a front electrode, and the material thereof is, for example, a transparent conductive oxide (TCO), such as indium tin oxide (ITO), fluorine-doped tin oxide (Fluorine-doped Tin Oxide, FTO). ), Aluminium-doped zinc oxide (AZO), gallium-doped Zinc Oxide (GZO) or a combination thereof. The method of forming the transparent electrode 202 is formed on the substrate 10 by, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), or spray coating.

The photoelectric conversion layer is composed of, for example, a first conductive type layer 204, an essential layer (or referred to as an I layer) 206, and a second conductive type layer 208. In an embodiment, the first conductivity type is a P type and the second conductivity type is an N type. In another embodiment, the first conductivity type is N-type and the second conductivity type is P-type. Hereinafter, the first conductive type layer 204 is a P type layer, and the second conductive type layer 208 is an N type layer. The transparent solar cell module of the present invention will be described, however, the present invention is not limited thereto.

The p-type layer 204 is a semiconductor or P-type insulating layer having a P-type dopant. The P-type dopant is, for example, boron. The P-type dopant semiconductor is, for example, a P-type amorphous germanium, a P-type microcrystalline germanium, a P-type tantalum carbide or a P-type germanium oxide. The P-type insulating layer is, for example, a P-type yttrium oxide. In one embodiment, the P-type layer 204 is a P-type amorphous germanium having a thickness of, for example, 5 to 10 nanometers (nm). In another embodiment, the P-type layer 204 is a P-type yttrium oxide having a thickness of, for example, 5 to 10 nm. The formation method of the P-type layer 204 is, for example, formed on the transparent electrode 202 by a chemical vapor deposition method after the transparent electrode 202 is formed on the substrate 200. The P-type dopant in the P-type layer 204 can be deposited on-site at the time of deposition, or after the deposition process is completed, using an ion implantation process.

The material of the intrinsic layer 206 includes an intrinsic semiconductor, an intrinsically doped semiconductor, and the dopant is, for example, fluorine. The intrinsic layer 206 is, for example, an intrinsic amorphous germanium, an intrinsic microcrystalline silicon, an intrinsic amorphous germanium doped fluorine, or an intrinsic microcrystalline germanium doped fluorine. In one embodiment, the intrinsic layer 206 is an intrinsic amorphous germanium having a thickness of, for example, 90 to 100 nanometers. In another embodiment, the intrinsic layer 206 is amorphous germanium doped fluorine having a thickness of, for example, less than 100 nanometers. The formation method of the intrinsic layer 206 is formed, for example, on the P-type layer 204 by chemical vapor deposition after the P-type layer 204 is formed on the transparent electrode 202.

The N-type layer 208 means that the material layer has, for example, nitrogen, phosphorus or arsenic. The material of the N-type material layer includes N-type amorphous germanium (Na-Si), N-type microcrystalline germanium (Nc-Si), N-type germanium oxide (N-SiO _x ), tantalum nitride (SiN _x ), N-type Niobium carbide (N-SiC _x ). _{N-SiO x, N-SiN} x as well as from among the N-SiC _{x X} represents any possible values.

The anti-reflective layer 210 is formed on the N-type layer 208. The material of the anti-reflection layer 210 can reflect long-wavelength light and improve the efficiency of the component. The material of the anti-reflection layer 210 is, for example, amorphous hydrogen-containing tantalum nitride (a-SiN _x :H, where X represents any possible value).

Thereafter, a metal layer 212 is formed on the anti-reflection layer 210. The metal layer 212 is a patterned film formed by an inkjet printing deposition method or other deposition process that can be directly patterned. The metal layer 212 metal is, for example, gold, silver, aluminum, copper, chromium, nickel, titanium, platinum, palladium or an alloy of the foregoing materials. Thereafter, a cover layer 214 is formed on the metal layer 212. It can be a single layer or a multilayer structure. The layers in the cover layer 204 may be composed of a single material or materials. The material of the cover layer 204 is, for example, the one described in the above embodiment, and details are not described herein again. The thickness of the cover layer 204 is, for example, 10 to 100,000 angstroms.

Next, referring to FIG. 4B, the high-energy beam 216, such as a quasi-molecular laser, is passed through the mask 230 to melt the cover layer 214 and the metal layer 212 to perform a trimming process to form a patterned cap layer 204a and a re-patterned metal. Layer 212a. The metal layer 212a is patterned again as a back electrode. In one embodiment, the laser used is, for example, an excimer laser having a wavelength of 248 nm.

Thereafter, referring to FIG. 4C, the cover layer 204a is removed.

Example 1

After ink-jet printing a 1 x 1 cm ² silver metal film on a substrate, a photoresist layer is deposited as a cap layer, and an excimer laser having a wavelength of 248 nm and an energy of 300 mJ/cm 2 is applied. The laser melting process is performed on the cover layer and the silver metal film, and the number of shots is 10 times to simultaneously pattern the cover layer and the silver metal film. After the laser melting process, the cover layer is directly applied. Remove. The results of scanning electron microscopy (SEM) showed that the edges of the silver film were few or only slightly raised.

Case 2

This example is the same as an embodiment, however, the laser energy is changed to the cover layer of organic insulating material and used to 400mJ / cm ^2, the laser gun to a number of times, and will cover the laser erosion process The layer is retained. The SEM results show that the silver film has no warp after the laser melting process.

The invention deposits a coating layer on the film to be melted by the high energy beam, and through a simple process, the influence of the high energy beam energy on the film material can be slowed down, and the shape, flatness and pattern accuracy of the film are improved.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

10,110,200‧‧‧substrate

12, 12a, 18‧ ‧ film

14, 14a, 114, 114a, 214, 214a‧ ‧ cover

16, 116, 216‧‧‧ high energy beam

30, 130, 230‧‧‧ masks

112, 112a‧‧‧ gate

118‧‧‧ dielectric layer

120‧‧‧Source contact layer

122‧‧‧汲 contact layer

124‧‧‧ gap

126‧‧‧ active layer

202‧‧‧Transparent electrode

204‧‧‧First Conductive Layer

206‧‧‧The essence

208‧‧‧Second conductive layer

210‧‧‧Anti-reflective layer

212‧‧‧metal layer

1A through 1C-1 illustrate a method of patterning in accordance with an embodiment of the invention.

2A through 2C-1 illustrate a method of patterning in accordance with another embodiment of the present invention.

3A to 3C are cross-sectional views showing a method of fabricating a contact-type thin film transistor of a lower gate structure according to an embodiment of the invention.

3A-1 to 3C-1 are schematic cross-sectional views showing a method of fabricating a contact-type thin film transistor of a lower gate structure according to an embodiment of the invention.

3A-2 to 3C-2 are schematic cross-sectional views showing a method of fabricating a contact-type thin film transistor on an upper gate structure according to an embodiment of the invention.

3A-3 to 3C-3 are schematic cross-sectional views showing a method of fabricating a contact-type thin film transistor with an upper gate structure according to an embodiment of the invention.

4A-4C are schematic cross-sectional views showing a method of fabricating a solar cell according to another embodiment of the invention.

10‧‧‧Substrate

12‧‧‧ Film

14‧‧‧ Coverage

16‧‧‧High energy beam

30‧‧‧Photomask

Claims (26)

A method of patterning, comprising: providing a first film on a substrate, the first film to be patterned; forming an unpatterned cover layer on the first film, wherein the unpatterned cover layer The material of the layer is different from the material of the first film; the unpatterned cover layer and the first film are melted by a light beam through a mask to form a patterned cover layer and a patterned a film; and selectively removing the patterned cover layer. The method of patterning according to claim 1, wherein the beam comprises a gas laser, a liquid laser, a solid laser or a semiconductor laser. The method of patterning of claim 2, wherein the gas laser comprises an excimer laser. The method of patterning according to claim 1, wherein the first film has a first pattern, the patterned first film has a second pattern, and the beam melts the unpatterned The step of covering the first film with the first film is to perform a trimming process on the first film having the first pattern to form the second pattern. The method of patterning according to claim 1, wherein the first film is an unpatterned layer. The method of patterning according to claim 1, wherein the first film and the unpatterned cover layer respectively comprise a conductive layer, an insulating layer, a semiconductor layer or a composite of at least two of the foregoing two material layers. Material layer or stacked layer. The method of patterning according to claim 6, wherein the material of the conductive layer comprises at least Au, Ag, Cu, Ni, Cr, Ti, Al, Pt, Pd metal or alloy thereof; Including an inorganic material, an organic material, or a combination thereof, wherein the inorganic material includes at least SiN _x , SiO ₂ , Al ₂ O ₃ , Al ₂ O ₃ , Ta ₂ O ₅ , TiO ₂ , ZrO ₂ , HfO ₂ , the organic material is at least Including benzocyclobutene (BCB), organosiloxane (siloxane), polyimine (PI) or silicate (silsequioxane); and the material of the semiconductor layer includes at least Si, Ge, GaAs, CdTe, ZnO , InZnO, ZnSnO, InGaZnO, InGaO or other metal oxide semiconductor materials. The method of patterning of claim 1, wherein the unpatterned cover layer comprises a photoresist layer. The method of patterning according to claim 1, wherein the first film is used to form a gate, a source contact layer, a gate contact layer or an active layer. The method of patterning according to claim 1, further comprising forming at least one second film on the patterned cover layer. The method of patterning of claim 10, further comprising removing the patterned cover layer prior to forming the second film. The method of patterning of claim 11, wherein the patterned cover layer is retained after the second film is formed. The method of patterning according to claim 10, wherein the first film is a gate, and the method of forming the second film comprises: forming a dielectric layer on the substrate; on the dielectric layer Forming a source contact layer and a drain contact layer; And forming an active layer in a gap between the source contact layer and the drain contact layer. The method of patterning according to claim 10, wherein the first film is a gate, and the method of forming the second film comprises: forming a dielectric layer on the substrate; on the dielectric layer Forming an active layer; and forming a source contact layer and a drain contact layer on the active layer. The method of patterning according to claim 1, further comprising forming at least a third film on the substrate before providing the first film. The method of patterning according to claim 15, wherein the first film is a gate, and the method for forming the third film comprises: forming an active layer on the substrate; forming a layer on the active layer a source contact layer and a drain contact layer; and a dielectric layer is formed on the substrate to cover the source contact layer and the drain contact layer. The method of patterning according to claim 15, wherein the first film is a gate, and the method of forming the third film comprises: forming a source contact layer and a drain contact layer on the substrate Forming an active layer on the substrate, covering the source contact layer and the drain contact layer and filling a gap between the source contact layer and the drain contact layer; A dielectric layer is formed on the substrate to cover the active layer. The method of patterning according to claim 1, wherein the first film is an electrode layer of a solar cell and the substrate is formed by: providing a transparent substrate; forming a transparent electrode on the transparent substrate; forming a A photoelectric conversion layer is on the transparent electrode; an anti-reflection layer is formed on the photoelectric conversion layer. A stacked structure to be patterned, comprising: a first film, the first film is a layer to be patterned; and an unpatterned cover layer covering the first film, wherein the unpatterned The material of the cover layer is different from the material of the first film. When a light beam is transmitted through the photomask to melt the first film, the unpatterned cover layer covers the first film, wherein The unpatterned cover layer covers the first film when the light beam is melted through the photomask to cover the first film. The stacked structure to be patterned as described in claim 19 is used for high energy beam patterning, wherein the high energy beam is a beam having a wavelength of 1 nm or more. The stacked structure to be patterned according to claim 19, wherein the first film has a first pattern, the patterned first film has a second pattern, and the second pattern and the first The shapes of the patterns are similar but different in size. The stacked structure to be patterned according to claim 19, wherein the first film has a first pattern, and the patterned first thin The film has a second pattern, and the second pattern is completely different in shape from the first pattern. The stacked structure to be patterned as described in claim 19, wherein the first film is an unpatterned layer. The stacked structure to be patterned according to claim 19, wherein the first film and the unpatterned cover layer respectively comprise a conductive layer, an insulating layer, a semiconductor layer or at least two of the foregoing films. Composite layer or stacked layer. The stacked structure to be patterned according to claim 24, wherein the material of the conductive layer comprises at least Au, Ag, Cu, Ni, Cr, Ti, Al, Pt, Pd metal or alloy thereof; The material comprises an inorganic material, an organic material or a combination thereof, wherein the inorganic material comprises at least SiN _x , SiO ₂ , Al ₂ O ₃ , Al ₂ O ₃ , Ta ₂ O ₅ , TiO ₂ , ZrO ₂ , HfO ₂ , the organic material At least Benzocyclobutene (BCB), organosiloxane (siloxane), polyimine (PI) or silicate (silsequioxane); and the material of the semiconductor layer includes at least Si, Ge, GaAs, CdTe and ZnO, InZnO, ZnSnO, InGaZnO, InGaO or other metal oxide semiconductor materials. The stacked structure to be patterned as described in claim 24, wherein the unpatterned cover layer comprises a photoresist layer.