CN101957560B - Patterning method and stacking structure for patterning - Google Patents
Patterning method and stacking structure for patterning Download PDFInfo
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- CN101957560B CN101957560B CN2009101399450A CN200910139945A CN101957560B CN 101957560 B CN101957560 B CN 101957560B CN 2009101399450 A CN2009101399450 A CN 2009101399450A CN 200910139945 A CN200910139945 A CN 200910139945A CN 101957560 B CN101957560 B CN 101957560B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a patterning method and a stacking structure for patterning. The patterning method comprises the following steps: providing a film to be patterned on a substrate, and forming a covering layer on the film, wherein the material of the covering layer is different from that of the film; corroding the covering layer and the film by high-energy light beams to form a patterned covering layer and a patterned film; and selectively removing the patterned covering layer.
Description
Technical field
The present invention relates to a kind of method of patterning and be used for the stacked structure of patterning.
Background technology
At present in LCD (LCD) manufacturing process, thin film transistor (TFT) array (TFT array) manufacture craft be still the vacuum coating, the gold-tinted that adopt traditional integrated circuit (IC) industry develop, with manufacture craft such as etching.And along with the continuous increase of panel size; The vacuum coating mode will have the too high problem that descends with qualification rate of manufacture craft equipment cost; Be compared to required expensive of traditional physical vapour deposition (PVD) mode; (Ink-Jet Printing, IJP) manufacture craft causes considerable attention to inkjet printing recently.
Inkjet technology has following advantage on flat-panel screens (FPD) manufacture craft cost: required huge equipment and the maintenance cost of purchasing in conventional thin film transistor LCD (TFT LCD) manufacture craft such as thin film deposition, gold-tinted, photoetching, the etching significantly saved in (1).(2) be compared to spin coating (Spin-coating) manufacture craft, IJP has patterning ability (tens of approximately micron) and preferred materials utilization factor.(3) traditional gold-tinted photoetching making technology need the design of a whole set of photomask of change, and inkjet technology only need be carried out program and controlled variable (Recipe) modulation when the change product design, can be in response to the spray printing demand of different product.
Though, the inkjet technology above-mentioned advantage of traditional manufacturing technique tool of comparing, its patterning ability is only about more than 30～60 microns, can't meet high demand of resolving.
Summary of the invention
The embodiment of the invention provides a kind of method of patterning, can use high-energy light beam guiding to improve the resolution of pattern.
The embodiment of the invention provides a kind of method of patterning; Many deposition one deck overlayers (Cover layer) on desiring with the film of high-energy light beam guiding melting loss; Make it slow down of the influence of high-energy light beam guiding energy, with the accuracy of the kenel, planarization and the pattern that improve film to membraneous material.
The embodiment of the invention provides a kind of stacked structure that is used for the high-energy light beam guiding patterning, and it slows down the influence of high-energy light beam guiding energy to membraneous material, with the planarization that improves film and the accuracy of pattern.
The embodiment of the invention proposes a kind of method of patterning, is included in the first film of treating patterning is provided on the substrate, then, on the first film, forms overlayer, and the material of this tectal material and the first film is different.Afterwards, with light beam melting loss overlayer and the first film, with the overlayer of formation patterning and the first film of patterning.Thereafter, the overlayer of selective removal patterning again.
The embodiment of the invention proposes a kind of stacked structure of patterning again, comprises the first film and overlayer.The first film is for treating patterned layer.Overlayer is covered on the first film, and the material of its material and the first film is different.
The method of the patterning of the embodiment of the invention uses high-energy light beam guiding to improve the resolution of pattern.And; The present invention provides a kind of stacked structure that is used for the high-energy light beam guiding patterning; Many deposition one deck overlayers (Cover layer) on desiring with the film of high-energy light beam guiding melting loss; Make it slow down of the influence of high-energy light beam guiding energy, with the accuracy of the kenel, planarization and the pattern that improve film to membraneous material.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended accompanying drawing to elaborate as follows.
Description of drawings
Figure 1A to Fig. 1 C-1 is the method according to a kind of patterning that one embodiment of the invention illustrated.
Fig. 2 A to Fig. 2 C-1 is the method according to a kind of patterning that another embodiment of the present invention illustrated.
Fig. 3 A to Fig. 3 C is the diagrammatic cross-section that accordings to the method for manufacturing thin film transistor of contact under a kind of grid structure down that the embodiment of the invention illustrated.
Fig. 3 A-1 to Fig. 3 C-1 is the diagrammatic cross-section that accordings to the method for manufacturing thin film transistor of contact on a kind of grid structure down that the embodiment of the invention illustrated.
Fig. 3 A-2 to Fig. 3 C-2 is a kind of diagrammatic cross-section that goes up the method for manufacturing thin film transistor of contact on the grid structure according to the embodiment of the invention illustrated.
Fig. 3 A-3 to Fig. 3 C-3 is a kind of diagrammatic cross-section that goes up the method for manufacturing thin film transistor of contact under the grid structure according to the embodiment of the invention illustrated.
Fig. 4 A to Fig. 4 C is the section schematic flow sheet according to the manufacturing approach of a kind of solar cell that another embodiment of the present invention illustrated.
The main element symbol description
10,110,200: substrate
12,12a, 18: film
14,14a, 114,114a, 214,214a: overlayer
16,116,216: high-energy light beam guiding
30,130,230: photomask
112,112a: grid
118: dielectric layer
120: the source electrode contact layer
122: the drain electrode contact layer
124: the gap
126: active layer
202: transparency electrode
204: the first conductive layers
206: intrinsic layer
208: the second conductive layers
210: anti-reflecting layer
212: metal level
Embodiment
Can arrange in pairs or groups melting loss (Ablation) technology of high-energy light beam guiding such as laser of inkjet technology is reached the patterning of plain conductor, to improve the resolution of pattern.When yet film comes patterning via laser melting loss manufacture craft; The high-energy of laser but can cause the phenomenon of film edge place perk (Film curled); This phenomenon has changed the live width of film, and the roughness variation of having derived, even the problem of adhesion decline.If laser energy is reduced, then has film can't remove clean doubt.
The present invention is many deposition one deck overlayers (Coverlayer) on desiring with the film of high-energy light beam guiding melting loss; Make it slow down of the influence of high-energy light beam guiding energy to membraneous material; With the planarization that improves film and the accuracy of pattern, the patterned film with good film kenel (morphology) is provided.
Figure 1A to 1C-1 is the method according to a kind of patterning that one embodiment of the invention illustrated.Fig. 2 A to 2C-1 is the method according to a kind of patterning that another embodiment of the present invention illustrated.
Please with reference to Figure 1A and 2A, the method for the patterning of present embodiment is to treat that earlier patterned film 12 is formed on the substrate 10.Then, many deposition one deck overlayers 14 on film 12.
The material of substrate 10 for example be glass, silicon, polyethylene terephthalate (PET), PEN (PEN), poly terephthalic acid cyclohexane to diformazan alcohol ester (PCT), polyimide (PI), Poly-s 179 (PES), or the combination of previous materials.
Please with reference to Figure 1A; In one embodiment; Above-mentioned film 12 for example is with physical vapour deposition (PVD) (Physical vapor deposition), chemical vapor deposition (Chemical vapor deposition), solution state manufacture craft deposition (Solution-processed deposition), electroplating deposition (Electroplatingdeposition), electroless deposition (Electroless plating deposition), inkjet printing deposition (Inkjetprinting deposition), or the film of the formed not patterning of other similar methods.
Please with reference to Fig. 2 A, in another embodiment, above-mentioned film 12 is with the inkjet printing depositional mode, directly forms the film of patterning at low temperatures, also uses with the cost of minimizing material and the cost of board equipment.Certainly, above-mentioned film 12 also can adopt other directly films of the formed patterning of deposition manufacture craft of patterning.Perhaps, also can adopt physical vapour deposition (PVD), chemical vapor deposition, solution state manufacture craft deposition, electroplating deposition, electroless deposition or inkjet printing deposition to form not patterned layer, carry out patterning earlier with any known patterning manufacture craft again.
Above-mentioned overlayer 14 can be individual layer or sandwich construction.Each layer of the overlayer 14 of sandwich construction can be to be made up of single one or more materials.The material of overlayer 14 and the material of film are different.Overlayer 14 comprises photoresist layer, conductive layer, insulation course, semiconductor layer or aforementioned at least two kinds of composite layers that material layer constituted or stack layers.The photoresist layer can be positive photoresist layer or negative photoresist layer.The material of conductive layer comprises Au, Ag, Cu, Ni, Cr, Ti, Al, Pt, Pd metal or its alloy at least.The material of insulation course comprises inorganic material, organic material or its combination at least.Inorganic material comprises SiN at least
x, SiO
2, Al
2O
3, Al
2O
3, Ta
2O
5, TiO
2, ZrO
2, HfO
2Organic material comprise at least benzocyclobutene (Benzocyclobutene, BCB), organosiloxane (siloxane), polyimide (PI) or silicate (silsequioxane).The material of semiconductor layer comprises Si, Ge, GaAs, CdTe, ZnO, ZnSnO, InZnO, InGaZnO, InGaO or other similar metal oxide semiconductor material at least.Above-mentioned tectal formation method for example is physical vapour deposition (PVD), chemical vapor deposition, solution state manufacture craft deposition, electroplating deposition, electroless deposition, inkjet printing deposition, or other similar methods.
Afterwards, pass through photomask 30 melting loss overlayers 14 and films 12 with high-energy light beam guiding 16, with the overlayer 14a of formation patterning and the film 12a of patterning, shown in Figure 1B and 2B.
Described high-energy light beam guiding 16 is meant that wavelength is the above light beam of 1 nanometer, for example is that wavelength is the light beam of 1 nanometer to 20000 nanometer, comprises laser, for example is gas laser, liquid laser, solid-state laser or semiconductor laser.Gas laser for example is a PRK, its example such as ArF (193 nanometer), KrF (248 nanometer), XeCl (308 nanometer) or XeCl (351 nanometer); Nitrogen laser (337 nanometer); Argon laser (488 nanometers, 514 nanometers); He-Ne Lasers (632.8 nanometer) or carbon dioxide laser (10600 nanometer).Liquid laser such as dye laser (400～700 nanometer).Solid-state laser such as Nd:YAG laser (1064 nanometer).The wavelength of semiconductor laser for example is 390～1550 nanometers.Employed Wavelength of Laser, relevant with film and the tectal material of desiring melting loss with thickness, can be a specific wavelength, or a wavelength coverage, for example be 248 nanometers, or 150 nanometer to 400 nanometers.The energy of employed laser is relevant with the material and the thickness of the film of desiring melting loss 12 and overlayer 14, for example is 10 to 100000 dusts.In one embodiment; Film 12 is the silver metal film of thickness 100 to 300 nanometers; Overlayer 14 is the photo anti-corrosion agent material of thickness 1000 to 2000 nanometers; Employed high-energy light beam guiding wavelength is that 248 nanometers and energy are 300 millijoule/square centimeters, and laser gun number (shot number) is 10 times.In another embodiment; Film 12 is the silver metal film of thickness 150 to 250 nanometers; Overlayer 14 is the organic insulation of thickness 200 to 300 nanometers, and employed high-energy light beam guiding wavelength is that 248 nanometers and energy are 400 millijoule/square centimeters, and laser gun number (shot number) is 1 time.When film 12 during for the film of patterning with first pattern, the high-energy light beam guiding melting loss manufacture craft of being carried out thereafter then can be so that formed patterned film 12a has second pattern.The melting loss manufacture craft can only be that manufacture craft is handled in a deburring, but makes formed second pattern different with the similar size of the shape of first pattern.Certainly, the melting loss manufacture craft also can be so that formed second pattern be different fully in shape with first pattern.
Utilize high-energy light beam guiding such as laser to come the melting loss film can the simplified pattern manufacture craft, do not need via complicated exposure imaging manufacture craft.High-energy light beam guiding then can slow down it through being covered in film 12 upper caldding layers 14 to the thermal effect that film 12 is produced in the melting loss process, to slow down the perk phenomenon, improves the planarization of the film 12a behind the patterning and the accuracy of pattern.
Please, in one embodiment, after carrying out high-energy light beam guiding melting loss manufacture craft, can the overlayer 14a of patterning be removed with reference to Fig. 1 C and 2C.In another embodiment, please with reference to Fig. 1 C-1 and 2C-1, after carrying out high-energy light beam guiding melting loss manufacture craft, overlayer 14a that will patterning keeps, and directly proceeds follow-up manufacture craft.Follow-up manufacture craft for example is on substrate 10, to form another layer film 18; For example be conductive layer, insulation course, semiconductor layer or aforementioned at least two kinds of composite layers that film constituted or stack layers; With on the overlayer 14a that covers patterning and after forming another layer film 18; The overlayer 14a of patterning still is retained, like Fig. 1 C-1 and 2C-1.
Method of the present invention can be applied to various fields, and below to lift thin film transistor (TFT) and solar cell now be the application examples explanation, yet the present invention is not as limit.
Fig. 3 A to 3C is the diagrammatic cross-section that accordings to the method for manufacturing thin film transistor of contact under a kind of grid structure down that the embodiment of the invention illustrated.
Please with reference to Fig. 3 A, the present embodiment method of manufacturing thin film transistor is on substrate 110, to form grid 112 earlier.
Afterwards, above substrate 110, form overlayer 114, cover grid 112.
Then, with high-energy light beam guiding 116 like PRK through photomask 130 melting loss overlayers 114 and grids 112, carry out deburring and handle, with the overlayer 114a that forms patterning and the grid 112a of patterning once more, shown in Fig. 3 B.In one embodiment, employed laser for example is that wavelength is the PRK of 248 nanometers.
Afterwards, please with reference to Fig. 3 C, on substrate 110, form dielectric layer 118.The overlayer 114a of dielectric layer 118 and patterning forms insulation course 118 jointly.
Then, on dielectric layer 118, form source electrode contact layer 120 and drain electrode contact layer 122.
Afterwards, in source electrode contact layer 120 and the gap 124 of drain electrode between the contact layer 122, form active layer 126, with source electrode contact layer 120 and drain electrode contact layer 122 electric property couplings, with the making of the thin film transistor (TFT) 100A that accomplishes down contact under the grid structure (BGBC).
The making that more than is the thin film transistor (TFT) 100A of contact under the following grid structure is explained it; Yet; The present invention is not limited to this, and contact (BGTC) on the following grid structure, the thin film transistor (TFT) of going up contact (TGTC) on the grid structure and going up contact (TGBC) under the grid structure also can adopt the method that is similar to contact under the above-mentioned grid structure down to make.
Fig. 3 A-1 to 3C-1 is the diagrammatic cross-section that accordings to the method for manufacturing thin film transistor of contact on a kind of grid structure down that the embodiment of the invention illustrated.
Please, on substrate 110, form grid 112 with reference to Fig. 3 A-1 and 3B-1.Afterwards, above substrate 110, form overlayer 114, cover grid 112.Then, with high-energy light beam guiding 116 like PRK through photomask 130 melting loss overlayers 114 and grids 112, carry out deburring and handle, with the overlayer 114a that forms patterning and the grid 112a of patterning once more.
Afterwards, please with reference to Fig. 3 C-1, on substrate 110, form dielectric layer 118.The overlayer 114a of dielectric layer 118 and patterning forms insulation course 118 jointly.Then, on dielectric layer 118, form active layer 126.Afterwards, on active layer 126, form source electrode contact layer 120 and drain electrode contact layer 122, the making of the thin film transistor (TFT) 100B of contact on the grid structure under accomplishing.
Fig. 3 A-2 to 3C-2 is a kind of diagrammatic cross-section that goes up the method for manufacturing thin film transistor of contact on the grid structure according to the embodiment of the invention illustrated.
Please, on substrate 110, form active layer 126 with reference to Fig. 3 A-2.Afterwards, on active layer 126, form source electrode contact layer 120 and drain electrode contact layer 122.Then, on substrate 110, form dielectric layer 118, cover source electrode contact layer 120 and drain electrode contact layer 122.
Afterwards, with reference to Fig. 3 B-2, on dielectric layer 118, form grid 112.Then, above substrate 110, form overlayer 114, cover grid 112.Then; Pass through photomask 130 melting loss overlayers 114 and grids 112 with high-energy light beam guiding 116 like PRK; Carrying out deburring handles; With the overlayer 114a that forms patterning and the grid 112a of patterning once more, the making of the thin film transistor (TFT) 100C of contact on the grid structure in the completion is like Fig. 3 C-2.
Fig. 3 A-3 to 3C-3 is a kind of diagrammatic cross-section that goes up the method for manufacturing thin film transistor of contact under the grid structure according to the embodiment of the invention illustrated.
Please, on substrate 110, form source electrode contact layer 120 and drain electrode contact layer 122 with reference to Fig. 3 A-3.Afterwards, on substrate 110, form active layer 126, cover on source electrode contact layer 120 and the drain electrode contact layer 122.Then, on active layer 126, form dielectric layer 118.
Afterwards, with reference to Fig. 3 B-3, on dielectric layer 118, form grid 112.Then, above substrate 110, form overlayer 114, cover grid 112.Then; Pass through photomask 130 melting loss overlayers 114 and grids 112 with high-energy light beam guiding 116 like PRK; Carrying out deburring handles; With the overlayer 114a that forms patterning and the grid 112a of patterning once more, the making of the thin film transistor (TFT) 100D of contact under the grid structure in the completion is like Fig. 3 C-3.
The material of above-mentioned grid 112 comprises conductive layers such as metal, DOPOS doped polycrystalline silicon or transparent conductive oxide.Metal for example is the alloy of gold, silver, aluminium, copper, chromium, nickel, titanium, platinum, palladium or previous materials etc.Transparent conductive oxide such as indium tin oxide etc.The formation method of grid 112 for example is with inkjet-fabricated technology, directly forms the conductive layer of patterning, with as grid 112.
Above-mentioned overlayer 114 can be individual layer or sandwich construction.Each layer can be to be made up of single one or more materials in the overlayer 114.The material of overlayer 114 comprises insulation course, and the material of insulation course for example is the described inorganic material of above embodiment, organic material or its combination, repeats no more at this.The thickness of overlayer 114 for example is 10 to 100000 dusts.
Above-mentioned dielectric layer 118 can be individual layer or sandwich construction.Dielectric layer 118 can be organic material person for example is that specific inductive capacity is lower than 4 organic material.In addition, in the dielectric layer 118 material of each layer can be by single kind of organic material constitute, multiple organic material constitutes, or comprises organic material and inorganic material.The material of dielectric layer 118 can be a photosensitive material or can not photosensitive material, for example is Polyimide (PI), tygon phenol (Polyvinyl phenol), polystyrene (PS), acryl or epoxy resin.Certainly, before forming dielectric layer 118, if needed also can be earlier the overlayer 114a of patterning be removed it.
Above-mentioned source electrode contact layer 120 for example is to form the layer of conductive material layer earlier with the formation method of drain electrode contact layer 122, then, and again with its patterning.The material of conductive material layer for example is the alloy of metals like gold, silver, aluminium, copper, chromium, nickel, titanium, platinum, palladium or previous materials etc.The formation method of conductive material layer comprises carries out the physical vapour deposition (PVD) manufacture craft, and the physical vapour deposition (PVD) manufacture craft for example is sputter manufacture craft or vapor deposition manufacture craft.In another embodiment, the formation method of source electrode contact layer 120 and drain electrode contact layer 122 also can directly form the conductive layer of patterning, for example is to implement it with inkjet-fabricated technology.
Above-mentioned active layer 126 can be to pass through patterning or do not pass through the patterning person, and its material for example is semiconductor or organic semiconductor.Semiconductor for example is amorphous silicon, polysilicon, Ge, GaAs, CdTe and ZnO, InZnO, ZnSnO, InGaZnO, InGaO or other similar metal oxide semiconductor material.Organic semiconductor comprises organic molecule, organic polymer or organic molecule and the organic macromolecule potpourri of N type or P type.The material of organic molecule for example is pentacene (Pentacene) or aphthacene (Tetracene).The organic semiconductor macromolecule for example be gather (3-hexyl) thiophene (Poly-(3-hexylthiophene), P3HT).
Above embodiment is to be that example is explained it with high-energy light beam guiding melting loss grid 112; Yet; The present invention also can be applied to in above-mentioned described each material layer not as limit if needed, for example is source electrode contact layer 120, drain electrode contact layer 122 or active layer 126.
Fig. 4 A to Fig. 4 C is the section schematic flow sheet according to the manufacturing approach of a kind of solar cell that another embodiment of the present invention illustrated.
Please, on transparency carrier 200, form transparency electrode (preceding electrode) 202, photoelectric conversion layer and anti-reflecting layer 210 in regular turn with reference to Fig. 4 A.Transparency carrier 200 can be rigid substrate or bendable substrate.Rigid substrate for example is the curtain glass substrate as buildings.Bendable substrate for example is a plastic substrate.Transparency electrode 202 is as preceding electrode; Its material for example be transparent conductive oxide (transparent conductiveoxide, TCO), such as being indium tin oxide (indium tin oxide; ITO), fluorine doped tin oxide (Fluorine-doped Tin Oxide; FTO), Al-Doped ZnO (Aluminium-doped zinc oxide, AZO), gallium-doped zinc oxide (Gallium-doped Zinc Oxide, GZO) or its combination.The formation method of transparency electrode 202 for example is to adopt chemical vapour deposition technique (CVD), physical vaporous deposition (PVD) or spraying process is formed on the substrate 10.
Photoelectric conversion layer for example is by first conductive layer 204,208 formations of intrinsic layer's (or being called the I layer) 206, second conductive layer.In one embodiment, first conductivity type is that the P type and second conductivity type are the N type.In another embodiment, first conductivity type is that the N type and second conductivity type are the P type.Below be P type layer with first conductive layer 204, second conductive layer 208 is that example is explained transparent solar cell module of the present invention for N type layer, however the present invention is not as limit.
The material of intrinsic layer 206 comprises extrinsic semiconductor, essential admixture semiconductor, and admixture for example is a fluorine.Intrinsic layer 206 for example is essential amorphous silicon, essential microcrystal silicon (intrinsic microcrystalline silicon), essential amorphous silicon doped with fluorine or essential microcrystal silicon doped with fluorine.In one embodiment, intrinsic layer 206 is essential amorphous silicon, and its thickness for example is 90～100 nanometers.In another embodiment, intrinsic layer 206 is the amorphous silicon doped with fluorine, and its thickness for example is less than 100 nanometers.The formation method of intrinsic layer 206 for example is after P type layer 204 is formed on the transparency electrode 202, utilizes chemical vapour deposition technique to be formed on the P type layer 204.
On anti-reflecting layer 210 form metal level 212 thereafter.Metal level 212 is with the direct film of the formed patterning of deposition manufacture craft of patterning of inkjet printing depositional mode or other.Metal level 212 metals for example are the alloys of gold, silver, aluminium, copper, chromium, nickel, titanium, platinum, palladium or previous materials etc.Afterwards, on metal level 212, form one deck overlayer 214.Can be individual layer or sandwich construction.Each layer can be to be made up of single one or more materials in the overlayer 204.The material of overlayer 204 for example is the said person of above embodiment, repeats no more at this.The thickness of overlayer 204 for example is 10 to 100000 dusts.
Then, please with reference to Fig. 4 B, with high-energy light beam guiding 216 like PRK through photomask 230 melting loss overlayers 214 and metal levels 212, carry out deburring and handle manufacture craft, with the overlayer 204a that forms patterning and the metal level 212a of patterning once more.The metal level 212a of patterning once more is with as back electrode.In one embodiment, employed laser for example is that wavelength is the PRK of 248 nanometers.
Afterwards, please with reference to Fig. 4 C, remove overlayer 204a.
Example one
Inkjet printing 1 * 1cm on substrate
2Behind the silver metal film of size; Then, deposition one deck photoresist layer is as overlayer, is that 248 nanometers and energy are that the PRK of 300 millijoule/square centimeters carries out laser melting loss manufacture craft to overlayer and silver metal film with wavelength again; Laser gun number (shotnumber) is 10 times;,, after laser melting loss manufacture craft, directly overlayer is removed overlayer and silver metal Thinfilm patternization with simultaneously.Result by sweep electron microscope (SEM) shows that silver-colored film edge aquatic foods have minority that the phenomenon of slight perk is arranged less or only.
Example two
This example is identical with routine one, and still, overlayer changes with organic insulation and employed laser energy and changes 400mJ/cm into
2, the laser gun number changes into 1 time, and after laser melting loss manufacture craft, will remain by overlayer.Show silver-colored film after laser melting loss manufacture craft by SEM result, its edge does not have the phenomenon of perk.
The present invention is many deposition one deck overlayers on desiring with the film of high-energy light beam guiding melting loss, through easy manufacture craft, can slow down the influence of high-energy light beam guiding energy to membraneous material, improve the accuracy of kenel, planarization and the pattern of film.
Though disclosed the present invention in conjunction with above embodiment; Yet it is not in order to limit the present invention; Be familiar with this operator in the technical field under any; Do not breaking away from the spirit and scope of the present invention, can do a little change and retouching, thus protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (25)
1. the method for a patterning comprises:
The first film is provided on substrate, and aforementioned the first film is treated patterning;
On aforementioned the first film, form an overlayer, the material of wherein aforementioned tectal material and aforementioned the first film is different; Aforementioned
Pass through aforementioned overlayer of photomask melting loss and aforementioned the first film with light beam, with the overlayer of formation patterning and the first film of patterning; And
The overlayer of selective removal aforementioned patternization.
2. the method for patterning as claimed in claim 1, wherein aforementioned light beam comprises gas laser, liquid laser, solid-state laser or semiconductor laser.
3. the method for patterning as claimed in claim 2, wherein aforementioned gas laser comprises PRK.
4. the method for patterning as claimed in claim 1; Wherein aforementioned the first film has first pattern; The first film of aforementioned patternization has second pattern; And the step of aforementioned overlayer of aforementioned light beam melting loss and aforementioned the first film is the aforementioned the first film with aforementioned first pattern to be carried out deburring handle manufacture craft, to form aforementioned second pattern.
5. the method for patterning as claimed in claim 1, wherein aforementioned the first film is patterned layer not.
6. the method for patterning as claimed in claim 1, wherein aforementioned the first film and aforementioned overlayer comprise conductive layer, insulation course, semiconductor layer or aforementioned at least two kinds of composite layers that material layer constituted or stack layers respectively.
7. the method for patterning as claimed in claim 6, wherein the material of aforementioned conductive layer comprises Au, Ag, Cu, Ni, Cr, Ti, Al, Pt, Pd metal or its alloy at least; The material of aforementioned dielectric layer comprises inorganic material, organic material or its combination, and wherein aforementioned inorganic material comprises SiN at least
x, SiO
2, Al
2O
3, Al
2O
3, Ta
2O
5, TiO
2, ZrO
2, HfO
2, aforementioned organic material comprises benzocyclobutene (BCB), organosiloxane (siloxane), polyimide (PI) or silicate (silsequioxane) at least; And the material of aforesaid semiconductor layer comprises Si, Ge, GaAs, CdTe, ZnO, InZnO, ZnSnO, InGaZnO, InGaO or other metal oxide semiconductor material at least.
8. the method for patterning as claimed in claim 1, wherein aforementioned overlayer comprises the photoresist layer.
9. the method for patterning as claimed in claim 1, wherein aforementioned the first film are in order to form grid, source electrode contact layer, drain electrode contact layer or active layer.
10. the method for patterning as claimed in claim 1 also is included on the overlayer of aforementioned patternization and forms at least one second film.
11. the method for patterning as claimed in claim 10 also is included in before aforementioned second film of formation, removes the overlayer of aforementioned patternization.
12. the method for patterning as claimed in claim 11, wherein after forming aforementioned second film, the overlayer of aforementioned patternization still is retained.
13. the method for patterning as claimed in claim 10, wherein aforementioned the first film is a grid, and the method that forms aforementioned second film comprises:
On aforesaid base plate, form a dielectric layer;
On aforementioned dielectric layer, form an one source pole contact layer and a drain electrode contact layer; And
Form an active layer in the gap between aforementioned source electrode contact layer and aforementioned drain electrode contact layer.
14. the method for patterning as claimed in claim 10, wherein aforementioned the first film is a grid, and the method that forms aforementioned second film comprises:
On aforesaid base plate, form dielectric layer;
On aforementioned dielectric layer, form active layer; And
On aforementioned active layer, form source electrode contact layer and drain electrode contact layer.
15. the method for patterning as claimed in claim 1, also being included in provides before the aforementioned the first film, on aforesaid base plate, forms at least one the 3rd film.
16. the method for patterning as claimed in claim 15, wherein aforementioned the first film is a grid, and the method that forms aforementioned the 3rd film comprises:
On aforesaid base plate, form active layer;
On aforementioned active layer, form source electrode contact layer and drain electrode contact layer; And
On aforesaid base plate, form dielectric layer, cover aforementioned source electrode contact layer and aforementioned drain electrode contact layer.
17. the method for patterning as claimed in claim 15, wherein aforementioned the first film is a grid, and the method that forms aforementioned the 3rd film comprises:
On aforesaid base plate, form source electrode contact layer and drain electrode contact layer;
On aforesaid base plate, form active layer, cover aforementioned source electrode contact layer and aforementioned drain electrode contact layer and fill in aforementioned source electrode contact layer and aforementioned drain electrode contact layer between the gap;
On aforesaid base plate, form dielectric layer, cover aforementioned active layer.
18. the method for patterning as claimed in claim 1, the electrode layer that wherein aforementioned the first film is a solar cell and the formation of aforesaid base plate comprise:
Transparency carrier is provided;
Form transparency electrode on aforementioned transparency carrier;
Form photoelectric conversion layer on aforementioned transparency electrode;
Form anti-reflecting layer on aforementioned photoelectric conversion layer.
19. the stacked structure of a patterning comprises:
The first film, aforementioned the first film are to treat patterned layer; And
Overlayer covers on the aforementioned the first film, and the material of wherein aforementioned tectal material and aforementioned the first film is different.
20. the stacked structure of patterning as claimed in claim 19 is used for the high-energy light beam guiding patterning, wherein high-energy light beam guiding is that wavelength is the above light beam of 1 nanometer.
21. the stacked structure of patterning as claimed in claim 19, wherein aforementioned the first film has first pattern.
22. the stacked structure of patterning as claimed in claim 19, wherein aforementioned the first film is patterned layer not.
23. the stacked structure of patterning as claimed in claim 19, wherein aforementioned the first film and aforementioned overlayer comprise conductive layer, insulation course, semiconductor layer or aforementioned at least two kinds of composite layers that material constituted or stack layers respectively.
24. the stacked structure of patterning as claimed in claim 23, wherein the material of aforementioned conductive layer comprises Au, Ag, Cu, Ni, Cr, Ti, Al, Pt, Pd metal or its alloy at least; The material of aforementioned dielectric layer comprises inorganic material, organic material or its combination, and wherein inorganic material comprises SiN at least
x, SiO
2, Al
2O
3, Al
2O
3, Ta
2O
5, TiO
2, ZrO
2, HfO
2, aforementioned organic material comprise at least benzocyclobutene (Benzocyclobutene, BCB), organosiloxane (siloxane), polyimide (PI) or silicate (silsequioxane); And the material of aforesaid semiconductor layer comprises Si, Ge, GaAs, CdTe and ZnO, InZnO, ZnSnO, InGaZnO, InGaO or other metal oxide semiconductor material at least.
25. the stacked structure of patterning as claimed in claim 23, wherein aforementioned overlayer comprises the photoresist layer.
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| CN103760749A (en) * | 2014-01-14 | 2014-04-30 | 北京京东方显示技术有限公司 | Manufacturing method of film patterns and display substrate |
| EP2960280A1 (en) * | 2014-06-26 | 2015-12-30 | E.T.C. S.r.l. | Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices |
| CN111186209B (en) * | 2018-11-15 | 2022-03-29 | 广东聚华印刷显示技术有限公司 | Transfer printing mold, and preparation method and application of patterned film layer |
| CN111834216B (en) * | 2019-04-15 | 2022-07-15 | 中国科学院物理研究所 | Method for preparing nano-sized metal film pattern |
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| CN101179016A (en) * | 2006-11-10 | 2008-05-14 | 台湾薄膜电晶体液晶显示器产业协会 | Thin-film transistor, active layer manufacturing method and LCD device |
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