TWI420770B - Driver circuit with electrostatic discharge protection - Google Patents
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Description
本發明係有關於一種電路,特別是有關於一種靜電放電保護電路。The present invention relates to a circuit, and more particularly to an electrostatic discharge protection circuit.
近年來隨著科學技術的飛速發展、微電子技術的廣泛應用及電磁環境越來越複雜,對靜電放電的電磁場效應如電磁干擾(EMI)及電磁相容性(EMC)問題越來越重視。由於晶片功能的增加及電路整合,積體電路設計對靜電放電更加敏感。設計人員必須使積體電路盡可能提供最有效的靜電放電保護,同時還要讓額外的保護元件不用佔用太多機板空間與成本。In recent years, with the rapid development of science and technology, the wide application of microelectronic technology and the increasingly complex electromagnetic environment, more and more attention has been paid to the electromagnetic field effects of electrostatic discharge such as electromagnetic interference (EMI) and electromagnetic compatibility (EMC). Due to the increased functionality of the chip and circuit integration, the integrated circuit design is more sensitive to electrostatic discharge. Designers must make the integrated circuit provide the most effective ESD protection possible, while leaving additional protection components without taking up too much board space and cost.
第1A圖係傳統具有靜電放電保護的驅動器電路。驅動器電路100包括發光二極體驅動器110、電感Ls、二極體Ds、電容器CQ 與C1。其中電感Ls與二極體Ds連接到發光二極體驅動器110的接點LX以形成昇壓電路(boost circuit)。電容器CQ 用於導引在節點N1的靜電,且C1用於導引在節點N2的靜電。由於發光二極體驅動器110的接點Ch1輸出類似脈衝寬度調變信號的切換信號,因此電容器C1會影響信號切換速度。此外,原則上正靜電會導引到電源端,負靜電會導引到接地端。接點Ch1的設計可以藉由發光二極體驅動器110內部的內接二極體D0 導引負靜電到接地。然而正靜電是沒有辦法被導引到一個電源端。Figure 1A is a conventional driver circuit with electrostatic discharge protection. The driver circuit 100 includes a light emitting diode driver 110, an inductor Ls, a diode Ds, and capacitors C Q and C1. The inductor Ls and the diode Ds are connected to the junction LX of the LED driver 110 to form a boost circuit. Capacitor C Q is used to conduct static electricity at node N1, and C1 is used to conduct static electricity at node N2. Since the contact Ch1 of the LED driver 110 outputs a switching signal similar to the pulse width modulation signal, the capacitor C1 affects the signal switching speed. In addition, in principle, static electricity will be directed to the power supply terminal, and negative static electricity will be directed to the ground terminal. The design of the contact Ch1 can guide the negative static electricity to the ground by the internal diode D 0 inside the LED driver 110. However, there is no way to get static electricity to a power supply.
第1B圖係另一傳統具有靜電放電保護的驅動器電路。驅動器電路100包括發光二極體驅動器110、電感Ls、二極體Ds、電容器CQ 以及二極體D1與D2。其中電感Ls與二極體Ds連接到發光二極體驅動器110的接點LX以形成昇壓電路(boost circuit)。電容器CQ 用於導引在節點N1的靜電,且二極體D1與D2用於導引在節點N2的靜電。然而,二極體D1的另一端連接到發光二極體驅動器工作電壓Vin,若是導引正靜電到發光二極體驅動器工作電壓Vin,會影響工作電壓Vin的穩定與品質。Figure 1B is another conventional driver circuit with electrostatic discharge protection. The driver circuit 100 includes a light emitting diode driver 110, an inductor Ls, a diode Ds, a capacitor C Q, and diodes D1 and D2. The inductor Ls and the diode Ds are connected to the junction LX of the LED driver 110 to form a boost circuit. Capacitor C Q is used to conduct static electricity at node N1, and diodes D1 and D2 are used to conduct static electricity at node N2. However, the other end of the diode D1 is connected to the operating voltage Vin of the LED driver. If the positive static electricity is applied to the operating voltage Vin of the LED driver, the stability and quality of the operating voltage Vin will be affected.
因此,有必要提供一種可以正確導引靜電的驅動器電路。Therefore, it is necessary to provide a driver circuit that can properly guide static electricity.
本揭露提供一種具有靜電放電保護的驅動器電路,包括:一驅動器,具有一調光單元,用以根據一脈衝寬度調變信號於一第一輸出節點產生一調光信號;一昇壓電路,耦接該驅動器,根據一輸入電壓與來自該驅動器的一昇壓單元的一昇壓信號於一第二輸出節點產生一輸出電壓;以及一靜電放電保護電路,用以降低該第一輸出節點與該第二輸出節點的靜電,包括:一電容器,耦接於該第二輸出節點與接地之間,用以導引該第二節點的靜電;以及一第一導引元件,耦接於該第一輸出節點與該第二輸出節點之間,用於導引該第一輸出節點的正靜電;其中該第一輸出節點的正靜電透過該第一導引元件傳輸到該第一輸出節點,且藉由該電容器降低來自該第一輸出節點的正靜電。The present disclosure provides a driver circuit with electrostatic discharge protection, comprising: a driver having a dimming unit for generating a dimming signal at a first output node according to a pulse width modulation signal; a boosting circuit, Coupling the driver, generating an output voltage at a second output node according to an input voltage and a boosting signal from a boosting unit of the driver; and an electrostatic discharge protection circuit for reducing the first output node and The static electricity of the second output node includes: a capacitor coupled between the second output node and the ground to guide the static electricity of the second node; and a first guiding component coupled to the first An positive static electricity is transmitted between the output node and the second output node, wherein the positive static electricity of the first output node is transmitted to the first output node through the first guiding component, and The positive static electricity from the first output node is reduced by the capacitor.
以上所述的驅動電路相較於傳統電路可以導引更大的靜電電壓且維持電路運作品質。The above described drive circuit can guide a larger electrostatic voltage and maintain the circuit operation quality than the conventional circuit.
為使本發明之上述目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下:第2圖係本發明具有靜電放電保護的驅動器電路。驅動器電路200包括驅動器210、第一導引元件220、第二導引元件230、電感Ls、二極體Ds及電容器CQ 。The above described objects, features, and advantages of the present invention will become more apparent from the description of the preferred embodiments of the invention. . The driver circuit 200 includes a driver 210, a first guiding element 220, a second guiding element 230, an inductor Ls, a diode Ds, and a capacitor C Q .
驅動器210具有一調光單元212。調光單元212根據輸入的脈衝寬度調變信號於輸出接腳Ch1產生週期性切換的調光信號。於本實施例中,輸出接腳Ch1直接連接第一輸出節點N1,因此在第一輸出節點N1亦具有調光信號。通常調光單元212的電路架構會有一個MOS電晶體連接到輸出接腳Ch1,如第2圖所示的MOS電晶體Q0 。於本實施例中,MOS電晶體Q0 具有一個內接二極體D0 (body diode),其可以導引在第一輸出節點N1的負靜電到接地。The driver 210 has a dimming unit 212. The dimming unit 212 generates a periodically switched dimming signal on the output pin Ch1 according to the input pulse width modulation signal. In this embodiment, the output pin Ch1 is directly connected to the first output node N1, and therefore has a dimming signal at the first output node N1. Generally, the circuit structure of the dimming unit 212 has an MOS transistor connected to the output pin Ch1, such as the MOS transistor Q 0 shown in FIG. In this embodiment, the MOS transistor Q 0 has an intrinsic diode D 0 (body diode) that can direct negative static electricity at the first output node N1 to ground.
於本實施例中,由電感Ls與二極體Ds組成的昇壓電路耦接驅動器210,且根據輸入電壓Vin與來自驅動器210的昇壓單元(未顯示)的昇壓信號(由驅動器210的接腳LX輸出)在第二輸出節點N2產生輸出電壓Vo。藉由昇壓電路,輸出電壓Vo是大於輸入電壓Vin。In the present embodiment, the boosting circuit composed of the inductor Ls and the diode Ds is coupled to the driver 210, and according to the input voltage Vin and the boosting signal from the boosting unit (not shown) of the driver 210 (by the driver 210) The pin LX output) produces an output voltage Vo at the second output node N2. With the booster circuit, the output voltage Vo is greater than the input voltage Vin.
靜電放電(ESD)保護電路是用以降低第一輸出節點與第二輸出節點的靜電。於一實施例中,靜電放電保護電路設置於驅動器的外部,是由電容器CQ 與第一導引元件220組成。第一導引元件220可能是單向導通元件或電阻器,但不限於此。其中單向導通元件可能是二極體、金屬氧化半導體元件(MOS)、厚氧化層裝置(Field-oxide device)、雙極接面電晶體(Bipolar junction transistor)或矽控整流器(SCR)的其中一種,但不限於此。An electrostatic discharge (ESD) protection circuit is used to reduce the static electricity of the first output node and the second output node. In one embodiment, the ESD protection circuit is disposed outside the driver and is composed of a capacitor C Q and a first guiding component 220. The first guiding element 220 may be a one-way conducting element or a resistor, but is not limited thereto. The one-way conducting component may be a diode, a metal oxide semiconductor device (MOS), a field-oxide device, a bipolar junction transistor, or a controlled rectifier (SCR). One, but not limited to.
於另一實施例中,為加強靜電放電保護的效率,靜電放電(ESD)保護電路會額外加入第二導引元件230於第一輸出端點N1及接地之間以導引第一輸出端點N1的負靜電至接地。其中第二導引元件230可能是二極體、基納二極體、電容器、暫態電壓抑制器(Transient Voltage Suppressor)、變阻器或矽控整流器,但不限於此。In another embodiment, to enhance the efficiency of the electrostatic discharge protection, an electrostatic discharge (ESD) protection circuit additionally adds a second guiding component 230 between the first output terminal N1 and the ground to guide the first output terminal. Negative static of N1 to ground. The second guiding component 230 may be a diode, a kinetic diode, a capacitor, a Transient Voltage Suppressor, a varistor or a 矽 controlled rectifier, but is not limited thereto.
於另一實施例中,更可以串聯第一導引元件210與第三導引元件(未顯示),同樣可以更有效地導引正靜電。第三導引元件亦可能是單向導通元件或電阻器,但不限於此。In another embodiment, the first guiding element 210 and the third guiding element (not shown) can be connected in series, and the positive static electricity can be guided more effectively. The third guiding element may also be a unidirectional conduction element or a resistor, but is not limited thereto.
電容器CQ 耦接於第二輸出節點N2與接地之間,主要是導引第二輸出節點N2的靜電。第一導引元件220耦接於第一輸出節點N1與第二輸出節點N2之間,用於導引第一輸出節點N2的正靜電。細言之,第一輸出節點N1的正靜電是透過第一導引元件220傳輸到第二輸出節點N2,然後藉由電容器CQ 降低來自第一輸出節點N1的正靜電,而在第一輸出節點N1的負靜電可藉由驅動器210的內接二極體D0 導引到接地。因此第一導引元件220與驅動器210內部的MOS電晶體Q0 的內接二極體D0 形成ESD保護胞(ESD protection cell)。The capacitor C Q is coupled between the second output node N2 and the ground, and is mainly for guiding the static electricity of the second output node N2. The first guiding component 220 is coupled between the first output node N1 and the second output node N2 for guiding positive static electricity of the first output node N2. In detail, the positive static electricity of the first output node N1 is transmitted to the second output node N2 through the first guiding element 220, and then the positive static electricity from the first output node N1 is lowered by the capacitor C Q , and the first output is at the first output. The negative static electricity of the node N1 can be guided to the ground by the internal diode D 0 of the driver 210. Therefore, the first guiding element 220 forms an ESD protection cell with the inscribed diode D 0 of the MOS transistor Q 0 inside the driver 210.
於一實施例中,當第一導引元件220,例如是一個二極體時,在實際ESD測試中,靜電放電保護能力由6KV提升到25KV。於另一實施例中,當再外接第二導引元件230於第一輸出節點N1與接地之間時,則第二導引元件230與第一導引元件220形成一組ESD保護胞,理論上,靜電放電保護能力可超過25KV。In one embodiment, when the first guiding element 220 is, for example, a diode, the electrostatic discharge protection capability is increased from 6 KV to 25 KV in an actual ESD test. In another embodiment, when the second guiding component 230 is externally connected between the first output node N1 and the ground, the second guiding component 230 forms a set of ESD protection cells with the first guiding component 220. The electrostatic discharge protection capability can exceed 25KV.
最後,熟此技藝者可體認到他們可以輕易地使用揭露的觀念以及特定實施例為基礎而變更及設計可以實施同樣目的之其他結構且不脫離本發明以及申請專利範圍。In the end, it is obvious to those skilled in the art that they can easily use the disclosed concept and the specific embodiments to change and design other structures that can perform the same purpose without departing from the invention and the scope of the claims.
100、150、200...驅動器電路100, 150, 200. . . Driver circuit
110、160、210...驅動器110, 160, 210. . . driver
Ls...電感Ls. . . inductance
Ds、D1 、D2 、D0 ...二極體Ds, D 1 , D 2 , D 0 . . . Dipole
CQ 、C1...電容C Q , C1. . . capacitance
Q0 ...MOS電晶體Q 0 . . . MOS transistor
220...第一導引元件220. . . First guiding element
230...第二導引元件230. . . Second guiding element
第1A圖係傳統具有靜電放電保護的驅動器電路;Figure 1A is a conventional driver circuit with electrostatic discharge protection;
第1B圖係另一傳統具有靜電放電保護的驅動器電路;以及Figure 1B is another conventional driver circuit with electrostatic discharge protection;
第2圖係本發明具有靜電放電保護的驅動器電路。Figure 2 is a driver circuit with electrostatic discharge protection of the present invention.
200...驅動器電路200. . . Driver circuit
210...驅動器210. . . driver
LS ...電感L S . . . inductance
D0 ...二極體D 0 . . . Dipole
CQ ...電容C Q . . . capacitance
Q0 ...MOS電晶體Q 0 . . . MOS transistor
220...第一導引元件220. . . First guiding element
230...第二導引元件230. . . Second guiding element
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TW99134679A TWI420770B (en) | 2010-10-12 | 2010-10-12 | Driver circuit with electrostatic discharge protection |
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TWI420770B true TWI420770B (en) | 2013-12-21 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105828509A (en) * | 2016-03-28 | 2016-08-03 | 联想(北京)有限公司 | Electrostatic protection module and electronic equipment |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200418164A (en) * | 2002-08-09 | 2004-09-16 | Motorola Inc | Electrostatic discharge protection circuitry and method of operation |
TW200525726A (en) * | 2003-10-10 | 2005-08-01 | Freescale Semiconductor Inc | Electrostatic discharge protection circuit and method of operation |
TW200620619A (en) * | 2004-12-10 | 2006-06-16 | Richtek Technology Corp | Booster-type power management chip containing electrostatic discharge protection mechanism of output electrode |
TW201025470A (en) * | 2010-03-05 | 2010-07-01 | Univ Chang Gung | Method of protecting compound semiconductor from electrostatic discharge damages |
TW201034331A (en) * | 2008-12-18 | 2010-09-16 | Sandisk Corp | Electrostatic discharge protective circuit having rise time detector and discharge sustaining circuitry |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200418164A (en) * | 2002-08-09 | 2004-09-16 | Motorola Inc | Electrostatic discharge protection circuitry and method of operation |
TW200525726A (en) * | 2003-10-10 | 2005-08-01 | Freescale Semiconductor Inc | Electrostatic discharge protection circuit and method of operation |
TW200620619A (en) * | 2004-12-10 | 2006-06-16 | Richtek Technology Corp | Booster-type power management chip containing electrostatic discharge protection mechanism of output electrode |
TW201034331A (en) * | 2008-12-18 | 2010-09-16 | Sandisk Corp | Electrostatic discharge protective circuit having rise time detector and discharge sustaining circuitry |
TW201025470A (en) * | 2010-03-05 | 2010-07-01 | Univ Chang Gung | Method of protecting compound semiconductor from electrostatic discharge damages |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105828509A (en) * | 2016-03-28 | 2016-08-03 | 联想(北京)有限公司 | Electrostatic protection module and electronic equipment |
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