TWI416266B - An exposure apparatus, an exposure method, an element manufacturing method, and a maintenance method - Google Patents

An exposure apparatus, an exposure method, an element manufacturing method, and a maintenance method Download PDF

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TWI416266B
TWI416266B TW094143401A TW94143401A TWI416266B TW I416266 B TWI416266 B TW I416266B TW 094143401 A TW094143401 A TW 094143401A TW 94143401 A TW94143401 A TW 94143401A TW I416266 B TWI416266 B TW I416266B
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liquid
substrate
exposure
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measuring device
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TW200632579A (en
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木田佳己
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尼康股份有限公司
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曝光裝置、曝光方法及元件製造方法、以及維修方法Exposure apparatus, exposure method, component manufacturing method, and maintenance method

本發明係關於一種對基板曝光之曝光裝置、曝光方法及元件製造方法。The present invention relates to an exposure apparatus, an exposure method, and a component manufacturing method for exposing a substrate.

做為半導體元件、液晶顯示元件等之微元件之步驟之一的光微影步驟中,係使用曝光裝置將在光罩上所形成之圖案投影曝光至感光性基板上。此曝光裝置具有用以支持光罩之光罩載台與用以支持基板之基板載台,一邊使得光罩載台與基板載台依序移動一邊將光罩之圖案像透過投影光學系統投影至基板。於微元件之製造中,基於元件之高密度化,乃需要使得在基板上所形成之圖案微細化。為了呼應此要求乃希望曝光裝置能有更高之解析度。做為實現高解析度之做法之一,已有人提出如下述專利文獻1所示之液浸曝光裝置,係在投影光學系統與基板之間的曝光用光光路空間充滿液體,透過液體來進行曝光。In the photolithography step which is one of the steps of a micro component such as a semiconductor element or a liquid crystal display element, a pattern formed on a photomask is projected onto a photosensitive substrate by using an exposure device. The exposure apparatus has a mask holder for supporting the mask and a substrate stage for supporting the substrate, and the mask image and the substrate stage are sequentially moved while the pattern image of the mask is projected through the projection optical system to Substrate. In the manufacture of microdevices, it is necessary to make the pattern formed on the substrate finer based on the higher density of the elements. In order to respond to this requirement, it is desirable to have a higher resolution of the exposure apparatus. As one of the methods for achieving high resolution, a liquid immersion exposure apparatus as disclosed in Patent Document 1 below has been proposed in which an exposure light path space between a projection optical system and a substrate is filled with a liquid, and is exposed through a liquid. .

[專利文獻1]國際公開第99/49504號小冊[Patent Document 1] International Publication No. 99/49504

於液浸曝光裝置中,由於透過液體來進行曝光處理與測量處理,所以一旦該液體受到污染或是惡化,有可能對於曝光處理與測量處理之結果造成影響。是以,掌握液體之狀態、進行適當的處理乃為重要者。In the liquid immersion exposure apparatus, since the exposure processing and the measurement processing are performed by the liquid, the liquid may be contaminated or deteriorated, which may affect the results of the exposure processing and the measurement processing. Therefore, it is important to grasp the state of the liquid and perform appropriate treatment.

本發明係鑑於上述情事所完成者,其目的在於提供一種可高精度掌握液體之狀態(性質、成分等)之曝光裝置、曝光方法及元件製造方法。The present invention has been made in view of the above circumstances, and an object thereof is to provide an exposure apparatus, an exposure method, and a device manufacturing method capable of accurately grasping a state (properties, composition, and the like) of a liquid.

為了解決上述課題,本發明係採用了與代表實施形態之圖1~圖13對應之下述構成。其中,對各要件附加括弧之符號僅不過是例舉相關要件,本發明並不侷限於各要件。In order to solve the above problems, the present invention adopts the following configuration corresponding to Figs. 1 to 13 representing the embodiment. Here, the symbols attached to the parentheses of the respective elements are merely illustrative of the relevant elements, and the present invention is not limited to the respective elements.

依據本發明之第1態樣,係提供一種曝光裝置,係透過光學構件對基板照射曝光用光來使得該基板曝光者;其特徵在於,具備:物體,與在該光學構件之光出射側所配置之該基板相異;液浸機構,用以將在該光學構件與該物體之間的光路空間以液體充滿;以及,測量裝置,在與該基板相異之物體上形成有液浸區域之狀態下,對液體之性質與成分中至少一者進行測量。According to a first aspect of the present invention, there is provided an exposure apparatus for exposing a substrate to an exposure light through an optical member to expose the substrate; wherein the object includes an object and a light exiting side of the optical member The substrate is configured to be different; a liquid immersion mechanism for filling the optical path space between the optical member and the object with a liquid; and a measuring device for forming a liquid immersion area on the object different from the substrate In the state, at least one of the properties and composition of the liquid is measured.

依據本發明之第1態樣,由於可在不與曝光用基板做接觸下即能掌握液體狀態,故可進行將液體設定成所需狀態之措施,可透過液體來高精度進行之曝光處理與測量處理。According to the first aspect of the present invention, since the liquid state can be grasped without being in contact with the substrate for exposure, the liquid can be set to a desired state, and the exposure process can be performed with high precision through the liquid. Measurement processing.

依據本發明之第2態樣,係提供一種曝光裝置,係透過光學構件對基板照射曝光用光來使得該基板曝光者;其特徵在於,具備:液浸機構,用以將在該光學構件之光出射側之既定空間以液體充滿;以及測量裝置,對液體之性質與成分中至少一者進行測量;該液浸機構具有流經液體之流路;該測量裝置係對該流路中之第1位置的液體以及第2位置的液體分別進行測量。According to a second aspect of the present invention, there is provided an exposure apparatus for exposing a substrate to an exposure light through an optical member to expose the substrate; and comprising: a liquid immersion mechanism for placing the optical member a predetermined space on the light exit side is filled with a liquid; and a measuring device that measures at least one of a property and a composition of the liquid; the liquid immersion mechanism has a flow path through the liquid; the measuring device is the first of the flow paths The liquid at the 1 position and the liquid at the 2nd position were measured separately.

依據本發明之第2態樣,由於可掌握液浸機構之流路中之第1位置的液體以及第2位置的液體之個別狀態,所以可對液體進行用以設定在所需狀態之措施,可透過液體來高精度進行之曝光處理與測量處理。According to the second aspect of the present invention, since the liquid in the first position and the liquid in the second position in the flow path of the liquid immersion mechanism can be grasped, the liquid can be set in a desired state. High-precision exposure processing and measurement processing through liquid.

依據本發明之第3態樣,係提供一種曝光方法,係透過液體對基板進行曝光者;其特徵在於,包含下述步驟:第1步驟,於與基板相異之物體上形成液浸區域;第2步驟,在與基板相異之物體上形成有液浸區域之狀態下,檢查液體狀態;第3步驟,依據檢查結果來調整曝光條件;以及第4步驟,在調整過曝光條件之狀況下,透過在該基板上所形成之液浸區域的液體對該基板照射曝光用光以使得該基板曝光。According to a third aspect of the present invention, there is provided an exposure method for exposing a substrate through a liquid; characterized by comprising the steps of: forming a liquid immersion area on an object different from the substrate; In the second step, the liquid state is inspected in a state where the liquid immersion area is formed on the object different from the substrate; the third step is to adjust the exposure condition according to the inspection result; and the fourth step is to adjust the overexposure condition The substrate is irradiated with exposure light through a liquid in a liquid immersion area formed on the substrate to expose the substrate.

依據本發明之第3態樣之曝光方法,由於事先使用與基板相異之物體來形成液浸區域,掌握液浸曝光中所使用之液體的狀態來設定包含液體狀態之最適當曝光條件,故可高精度進行曝光處理與測量處理。According to the exposure method of the third aspect of the present invention, the liquid immersion area is formed by using an object different from the substrate in advance, and the state of the liquid used in the immersion exposure is grasped to set the optimum exposure condition including the liquid state. Exposure processing and measurement processing can be performed with high precision.

依據本發明之第4態樣,係提供一種曝光方法,係透過液體對基板照射曝光用光來使得該基板曝光者;其特徵在於,包含:使得液體透過流路來流通於既定之液浸區域;於該流路之第1位置與第2位置檢測液體狀態;以及依據檢測結果,於基板上形成液浸區域並對基板進行曝光。According to a fourth aspect of the present invention, there is provided an exposure method for exposing a substrate to a substrate by exposing exposure light to a substrate, wherein the liquid is permeated through the flow path to flow through a predetermined liquid immersion area. And detecting a liquid state at the first position and the second position of the flow path; and forming a liquid immersion area on the substrate according to the detection result and exposing the substrate.

依據本發明之第4態樣,由於可掌握朝液浸區域之流路中之第1位置的液體與第2位置的液體之個別狀態,對液體進行用以設定成所需狀態之措施,故可透過液體來高精度進行曝光處理與測量處理。According to the fourth aspect of the present invention, since it is possible to grasp the individual state of the liquid in the first position in the flow path of the liquid immersion area and the liquid in the second position, the liquid is set to a desired state. Exposure processing and measurement processing can be performed with high precision through liquid.

依據本發明之第5態樣,係提供一種使用上述態樣之曝光裝置的元件製造方法。依據本發明之第5態樣,可使用可透過液體來高精度進行曝光處理與測量處理之曝光裝置來製造元件。According to a fifth aspect of the present invention, there is provided a method of manufacturing an element using the exposure apparatus of the above aspect. According to the fifth aspect of the present invention, an element can be manufactured by using an exposure apparatus that can perform exposure processing and measurement processing with high precision through a liquid.

依據本發明之第6態樣,係提供一種元件之製造方法,包含下述步驟:藉由上述態樣之曝光方法來對基板進行曝光;使得曝光後之基板顯影;以及將顯影後之基板加工。依據本發明之第6態樣,可使用可透過液體來高精度進行曝光處理與測量處理之曝光裝置來製造元件。According to a sixth aspect of the present invention, there is provided a method of manufacturing a device comprising the steps of: exposing a substrate by the exposure method of the above aspect; developing the substrate after exposure; and processing the substrate after development . According to the sixth aspect of the present invention, an element can be manufactured by using an exposure apparatus that can perform exposure processing and measurement processing with high precision through a liquid.

依據本發明,可透過液體來高精度進行曝光處理與測量處理。According to the present invention, exposure processing and measurement processing can be performed with high precision through a liquid.

以下,針對本發明之實施形態參照圖式來說明,惟本發明並不限定於此。Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.

<第1實施形態><First embodiment>

圖1所示係第1實施形態之曝光裝置之示意構成圖。於圖1中,曝光裝置EX具有:光罩載台MST(可保持著光罩M做移動)、基板載台ST1(具有保持基板P之基板保持具PH,可將基板P保持於基板保持具PH上進行移動)、測量載台ST2(搭載著以光學方式進行關於曝光處理之測量的光測量器,可與基板載台ST1做獨立移動)、照明光學系統IL(將在光罩載台MST所保持之光罩M以曝光用光EL來照明者)、投影光學系統PL(將以曝光用光EL照明後之光罩M的圖案像對在基板載台ST1所保持著之基板P做投影曝光)、以及控制裝置CONT(統籌控制曝光裝置EX整體之動作)。於控制裝置CONT係連接著用以告知關於曝光處理之資訊的告知裝置INF。告知裝置INF係包含顯示器裝置(顯示裝置)、以聲音或光來發出警報(警告)之警報裝置等。再者,於控制裝置CONT係連接著用以儲存關於曝光處理之資訊的記憶裝置MRY。Fig. 1 is a schematic configuration diagram of an exposure apparatus according to a first embodiment. In FIG. 1, the exposure apparatus EX has a mask stage MST (which can hold the mask M to move), a substrate stage ST1 (having a substrate holder PH holding the substrate P, and the substrate P can be held in the substrate holder) Moving on the PH), the measurement stage ST2 (the optical measuring device that optically performs the measurement on the exposure processing, can be moved independently from the substrate stage ST1), and the illumination optical system IL (which will be in the mask stage MST) The reticle M that is held by the exposure light EL is illuminated, and the projection optical system PL (projects the pattern P of the reticle M illuminated by the exposure light EL to project the substrate P held on the substrate stage ST1) Exposure) and control device CONT (coordinated control of the overall operation of the exposure device EX). A notification device INF for notifying the information on the exposure processing is connected to the control unit CONT. The notification device INF is an alarm device including a display device (display device), an alarm (warning) by sound or light, and the like. Furthermore, the control device CONT is connected to a memory device MRY for storing information about the exposure process.

本實施形態之曝光裝置EX為採用液浸法(以使得曝光波長實質變短來提高解析度,並實質增加焦點深度)之液浸曝光裝置,具備液浸機構1,來將投影光學系統PL之像面側的曝光用光EL之光路空間K1以液體LQ來充滿。液浸機構1係設置於投影光學系統PL之像面附近,具備:嘴構件70(具有供應液體LQ之供應口12以及回收液體LQ之回收口22)、液體供應機構10(透過在嘴構件70所設之供應口12來對投影光學系統PL之像面側供應液體LQ)、以及液體回收機構20(透過在嘴構件70所設之回收口22來將投影光學系統PL之像面側的液體LQ加以回收)。嘴構件70係以將構成投影光學系統PL之複數光學元件當中之最接近投影光學系統PL像面的第1光學元件LS1加以圍繞的方式形成為環狀。The exposure apparatus EX of the present embodiment is a liquid immersion exposure apparatus which employs a liquid immersion method (increasing the exposure wavelength to increase the resolution and substantially increases the depth of focus), and includes a liquid immersion mechanism 1 for projecting the optical system PL. The optical path space K1 of the exposure light EL on the image side is filled with the liquid LQ. The liquid immersion mechanism 1 is provided in the vicinity of the image plane of the projection optical system PL, and includes a nozzle member 70 (a supply port 12 for supplying the liquid LQ and a recovery port 22 for recovering the liquid LQ), and a liquid supply mechanism 10 (through the nozzle member 70). The supply port 12 is provided to supply the liquid LQ to the image side of the projection optical system PL, and the liquid recovery mechanism 20 (the liquid on the image side of the projection optical system PL is transmitted through the recovery port 22 provided in the nozzle member 70). LQ is recycled). The nozzle member 70 is formed in a ring shape so as to surround the first optical element LS1 closest to the image plane of the projection optical system PL among the plurality of optical elements constituting the projection optical system PL.

曝光裝置EX係採用局部液浸方式,亦即,至少在將光罩M之圖案像投影至基板P上之過程中,藉由自液體供應機構10所供應之液體LQ在基板P上之一部分(包含投影光學系統PL之投影區域AR)局部性形成較投影區域AR大且較基板P小之液體LQ的液浸區域LR。具體而言,曝光裝置EX係將在最接近投影光學系統PL像面之第1光學元件LS1之下面LSA與於投影光學系統PL像面側所配置之基板P上面之間的光路空間K1以液體LQ充滿,透過在投影光學系統PL(第1光學元件LS1)與基板P之間的液體LQ以及投影光學系統PL(第1光學元件LS1)將通過了光罩M之曝光用光EL照射於基板P以將光罩M之圖案像投影至基板P。控制裝置CONT係使用液體供應機構10對基板P上以既定量供應液體LQ,並使用液體回收機構20將基板P上之液體LQ做既定量回收,藉此,於基板P上局部形成液體LQ之液浸區域LR。The exposure apparatus EX adopts a partial liquid immersion method, that is, at least one portion of the liquid LQ supplied from the liquid supply mechanism 10 on the substrate P during at least the projection of the pattern image of the reticle M onto the substrate P ( The projection area AR including the projection optical system PL locally forms a liquid immersion area LR which is larger than the projection area AR and smaller than the substrate P. Specifically, the exposure apparatus EX is a liquid in the optical path space K1 between the lower surface LSA of the first optical element LS1 closest to the image plane of the projection optical system PL and the upper surface of the substrate P disposed on the image plane side of the projection optical system PL. The LQ is full, and the exposure light EL that has passed through the mask M is irradiated onto the substrate through the liquid LQ between the projection optical system PL (first optical element LS1) and the substrate P and the projection optical system PL (first optical element LS1). P projects the pattern image of the mask M onto the substrate P. The control device CONT uses the liquid supply mechanism 10 to supply the liquid LQ to the substrate P in a predetermined amount, and uses the liquid recovery mechanism 20 to quantitatively recover the liquid LQ on the substrate P, thereby partially forming the liquid LQ on the substrate P. Liquid immersion area LR.

又,曝光裝置EX具備測量裝置60,以對形成液浸區域LR之液體LQ的性質與成分中至少一者(液體狀態)進行測量。測量裝置60係對在投影光學系統PL與於投影光學系統PL像面側所配置之物體之間所充滿之液體LQ的性質與成分中至少一者進行測量。於本實施形態中,測量裝置60係對由液體回收機構20所回收之液體LQ進行測量。Further, the exposure apparatus EX includes a measuring device 60 for measuring at least one of the properties and components (liquid state) of the liquid LQ forming the liquid immersion area LR. The measuring device 60 measures at least one of the properties and components of the liquid LQ filled between the projection optical system PL and an object disposed on the image plane side of the projection optical system PL. In the present embodiment, the measuring device 60 measures the liquid LQ recovered by the liquid recovery mechanism 20.

又液浸機構1當中之液體供應機構10係包含功能液供應裝置120,可供應與用以形成液浸區域LR之液體LQ為不同之具既定功能的功能液。Further, the liquid supply mechanism 10 in the liquid immersion mechanism 1 includes a functional liquid supply device 120 which can supply a functional liquid having a predetermined function different from the liquid LQ for forming the liquid immersion area LR.

在本實施形態中,在曝光裝置EX方面所舉例說明者係使用掃描型曝光裝置(所謂的掃描步進機),一邊使得光罩M與基板P在掃描方向朝互異方向(逆方向)同步移動一邊將於光罩M所形成之圖案曝光於基板P上。於以下之說明中,將水平面內光罩M與基板P同步移動方向(掃描方向)定為X軸方向,將水平面內與X軸方向呈正交之方向定為Y軸方向(非掃描方向),將與X軸方向及Y軸方向呈垂直之和投影光學系統PL之光軸AX為一致之方向定為Z軸方向。又,繞X軸、Y軸、Z軸之旋轉(傾斜)方向分別定為θX、θY、θZ方向。又,此處所說之「基板」係包含於半導體晶圓等之基材上塗佈了感光材(光阻)者,「光罩」係包含形成有在基板上縮小投影之元件圖案的光柵。In the present embodiment, the exemplified by the exposure apparatus EX uses a scanning type exposure apparatus (so-called scanning stepper) to synchronize the mask M and the substrate P in the scanning direction in the mutually opposite direction (reverse direction). The pattern formed by the mask M is exposed on the substrate P while moving. In the following description, the synchronous movement direction (scanning direction) of the mask M and the substrate P in the horizontal plane is defined as the X-axis direction, and the direction orthogonal to the X-axis direction in the horizontal plane is defined as the Y-axis direction (non-scanning direction). The direction perpendicular to the X-axis direction and the Y-axis direction and the optical axis AX of the projection optical system PL are defined as the Z-axis direction. Further, the directions of rotation (inclination) around the X-axis, the Y-axis, and the Z-axis are defined as θX, θY, and θZ directions, respectively. In addition, the "substrate" as used herein includes a photosensitive material (photoresist) coated on a substrate such as a semiconductor wafer, and the "mask" includes a grating in which an element pattern reduced in projection on the substrate is formed.

照明光學系統IL具有:曝光用光源、將曝光用光源所射出之光束照度予以均勻化之光學積分器、將來自光學積分器之曝光用光EL加以聚光之聚光透鏡、延遲透鏡系統、以及對曝光用光EL在光罩M上之照明區域進行設定之視野光闌等。光罩M上之既定照明區域係藉由照明光學系統IL以均勻之照度分布的曝光用光EL來照明。自照明光學系統IL所射出之曝光用光EL,可使用例如自水銀燈所射出之亮線(g線、h線、i線)以及KrF準分子雷射光(波長248nm)等遠紫外光(DUV光)、ArF準分子雷射光(波長193nm)以及F2 雷射光(波長157nm)等之真空紫外光(VUV光)等。於本實施形態中係使用ArF準分子雷射光。The illumination optical system IL includes an exposure light source, an optical integrator that uniformizes the illuminance of the light beam emitted from the exposure light source, a condensing lens that condenses the exposure light EL from the optical integrator, a retardation lens system, and The field of view pupil or the like for setting the illumination area of the mask M to the exposure light EL. The predetermined illumination area on the mask M is illuminated by the exposure light EL distributed by the illumination optical system IL with uniform illumination. For the exposure light EL emitted from the illumination optical system IL, for example, a bright line (g line, h line, i line) emitted from a mercury lamp and a far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm) can be used. ), ArF excimer laser light (wavelength 193 nm), and vacuum ultraviolet light (VUV light) such as F 2 laser light (wavelength 157 nm). In the present embodiment, ArF excimer laser light is used.

於本實施形態中,形成液浸區域LR之液體LQ係使用純水。純水不僅可讓ArF準分子雷射光穿透,且可讓例如水銀燈所射出之亮線(g線、h線、i線)以及KrF準分子雷射光(波長248nm)等遠紫外光(DUV光)穿透。In the present embodiment, the liquid LQ forming the liquid immersion area LR is pure water. Pure water not only allows ArF excimer laser light to penetrate, but also allows for bright ultraviolet light (g line, h line, i line) emitted by mercury lamps, and far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm). )penetrate.

光罩載台MST可保持光罩M進行移動。光罩載台MST係將光罩M以真空吸附(或是靜電吸附)來加以保持。光罩載台MST可藉由光罩載台驅動裝置MSTD(包含由控制裝置CONT所控制之線性馬達等)之驅動,在保持光罩M之狀態下,而於與投影光學系統PL之光軸AX垂直之平面內(亦即XY平面內)做2維空間移動以及θZ方向之微旋轉。於光罩載台MST上設置有與光罩載台MST一起移動之移動鏡91。又,於移動鏡91之對向位置設有雷射干涉儀92。光罩載台MST上之光罩M的2維空間方向之位置、以及θZ方向之旋轉角(有時也包含θX、θY方向之旋轉角)係由雷射干涉儀92做即時測量。雷射干涉儀92之測量結果係輸出至控制裝置CONT。控制裝置CONT係依據雷射干涉儀92之測量結果來驅動光罩載台驅動裝置MSTD,對於在光罩載台MST所保持之光罩M進行位置控制。The mask stage MST can keep the mask M moving. The mask stage MST holds the mask M by vacuum adsorption (or electrostatic adsorption). The mask stage MST can be driven by the mask stage driving device MSTD (including a linear motor controlled by the control unit CONT) while maintaining the mask M, and the optical axis of the projection optical system PL. The AX vertical plane (that is, in the XY plane) performs 2-dimensional spatial movement and micro-rotation in the θZ direction. A moving mirror 91 that moves together with the mask stage MST is disposed on the mask stage MST. Further, a laser interferometer 92 is provided at an opposite position of the moving mirror 91. The position of the mask M in the two-dimensional spatial direction on the mask stage MST and the rotation angle in the θZ direction (sometimes including the rotation angles in the θX and θY directions) are measured instantaneously by the laser interferometer 92. The measurement results of the laser interferometer 92 are output to the control unit CONT. The control unit CONT drives the mask stage driving unit MSTD based on the measurement result of the laser interferometer 92 to positionally control the mask M held by the mask stage MST.

投影光學系統PL係將光罩M之圖案像以既定之投影倍率β投影於基板P上。投影光學系統PL包含複數光學元件,該等光學元件係由鏡筒PK所保持著。於本實施形態中,投影光學系統PL之投影倍率β為例如1/4、1/5、或是1/8之縮小系統。又,投影光學系統PL亦可為等倍系統以及放大系統之任一者。又,投影光學系統PL亦可為不含反射光學元件之折射系統、不含折射光學元件之反射系統、包含反射光學元件與折射光學元件之反射折射系統中任一者。構成投影光學系統PL之複數光學元件當中最接近投影光學系統PL像面之第1光學元件LS1係自鏡筒PK露出。The projection optical system PL projects the pattern image of the mask M onto the substrate P at a predetermined projection magnification β. The projection optical system PL includes a plurality of optical elements that are held by the lens barrel PK. In the present embodiment, the projection magnification β of the projection optical system PL is, for example, a reduction system of 1/4, 1/5, or 1/8. Further, the projection optical system PL may be either an equal magnification system or an amplification system. Further, the projection optical system PL may be any one of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, and a catadioptric system that includes a reflective optical element and a refractive optical element. Among the plurality of optical elements constituting the projection optical system PL, the first optical element LS1 closest to the image plane of the projection optical system PL is exposed from the lens barrel PK.

基板載台ST1具有保持基板P之基板保持具PH。基板載台ST1係配置於投影光學系統PL之像面側,於該投影光學系統PL之像面側,可於基座構件BP上移動。基板保持具PH係以例如真空吸附等來保持基板P。於基板載台ST1上設有凹部96,用以保持基板P之基板保持具PH係配置於凹部96。再者,基板載台ST1當中凹部96以外之上面95係一平坦面(平坦部),其高度與於基板保持具PH所保持之基板P的上面為大致同一高度(同一面)。The substrate stage ST1 has a substrate holder PH that holds the substrate P. The substrate stage ST1 is disposed on the image plane side of the projection optical system PL, and is movable on the base member BP on the image plane side of the projection optical system PL. The substrate holder PH is used to hold the substrate P by, for example, vacuum adsorption. A concave portion 96 is provided on the substrate stage ST1, and a substrate holder PH for holding the substrate P is disposed in the concave portion 96. Further, the upper surface of the substrate stage ST1 other than the concave portion 96 is a flat surface (flat portion) having a height equal to the same height (same surface) as the upper surface of the substrate P held by the substrate holder PH.

基板載台ST1可藉由包含由控制裝置CONT所驅動之線性馬達等之基板載台驅動裝置SD1之驅動,在基板P透過基板保持具PH被保持之狀態下,於基座構件BP上在XY平面內朝2維空間移動以及於θZ方向微旋轉。再者基板載台ST1亦能於Z軸方向、θX方向、以及θY方向移動。是以,於基板載台ST1所保持之基板P的上面,可在X軸、Y軸、Z軸、θX、θY以及θZ方向之6自由度方向移動。於基板載台ST1之側面固定設置有與基板載台ST1一同移動之移動鏡93。又,於與移動鏡93對向位置設置有雷射干涉儀94。基板載台ST1上之基板P的2維空間方向位置以及旋轉角係由雷射干涉儀94做即時測量。又,曝光裝置EX係具備例如特開平8-37149號公報所揭示般之對在基板載台ST1所支持之基板P上面之面位置資訊進行檢測之斜入射方式之聚焦校平(focus leveling)檢測系統(未圖示)。聚焦校平檢測系統係對基板P上面之面位置資訊(Z軸方向之位置資訊、以及基板P之θX與θY方向之傾斜資訊)進行檢測。又,聚焦校平檢測系統係可透過液浸區域LR之液體LQ來檢測基板P之面位置資訊,亦可在液浸區域LR之外側不透過液體LQ來檢測基板P之面位置資訊,亦可將透過液浸區域LR之液體LQ來檢測基板P之面位置資訊之做法與不透過液體LQ來檢測基板P之面位置資訊之做法併用。又,聚焦校平檢測系統亦可採用使用靜電電容型感測器之方式者。雷射干涉儀94之測量結果亦輸出至控制裝置CONT。聚焦校平檢測系統之測量結果亦輸出至控制裝置CONT。控制裝置CONT係依據聚焦校平檢測系統之檢測結果來驅動基板載台驅動裝置SD1,對基板P之聚焦位置(Z位置)以及傾斜角(θX、θY)進行控制使得基板P上面能與投影光學系統PL之像面匹配,且依據雷射干涉儀94之測量結果,進行基板P在X軸方向、Y軸方向以及θZ方向之位置控制。The substrate stage ST1 can be driven by the substrate stage driving device SD1 including a linear motor driven by the control unit CONT, and the substrate P can be held on the base member BP in a state where the substrate P is held by the substrate holder PH. The plane moves in a two-dimensional space and rotates slightly in the θZ direction. Further, the substrate stage ST1 can also move in the Z-axis direction, the θX direction, and the θY direction. Therefore, the upper surface of the substrate P held by the substrate stage ST1 can be moved in the six-degree-of-freedom directions of the X-axis, the Y-axis, the Z-axis, the θX, the θY, and the θZ directions. A moving mirror 93 that moves together with the substrate stage ST1 is fixed to the side surface of the substrate stage ST1. Further, a laser interferometer 94 is provided at a position opposite to the moving mirror 93. The two-dimensional spatial direction position and the rotation angle of the substrate P on the substrate stage ST1 are measured instantaneously by the laser interferometer 94. In addition, the exposure apparatus EX is provided with a focus leveling detection of an oblique incidence method for detecting surface position information on the substrate P supported by the substrate stage ST1 as disclosed in Japanese Laid-Open Patent Publication No. Hei 8-37149. System (not shown). The focus leveling detection system detects surface position information (position information in the Z-axis direction and tilt information in the θX and θY directions of the substrate P) on the substrate P. In addition, the focus leveling detection system can detect the position information of the surface of the substrate P through the liquid LQ of the liquid immersion area LR, and can also detect the position information of the surface of the substrate P without the liquid LQ outside the liquid immersion area LR. The method of detecting the position information of the surface of the substrate P through the liquid LQ of the liquid immersion area LR is used in combination with the method of detecting the position information of the surface of the substrate P without the liquid LQ. In addition, the focus leveling detection system can also adopt a method using an electrostatic capacitance type sensor. The measurement results of the laser interferometer 94 are also output to the control unit CONT. The measurement results of the focus leveling detection system are also output to the control unit CONT. The control device CONT drives the substrate stage driving device SD1 according to the detection result of the focus leveling detection system, and controls the focus position (Z position) and the tilt angle (θX, θY) of the substrate P so that the substrate P can be coupled with the projection optics. The image planes of the system PL are matched, and based on the measurement results of the laser interferometer 94, the positional control of the substrate P in the X-axis direction, the Y-axis direction, and the θZ direction is performed.

測量載台ST2係搭載著以光學方式進行與曝光處理有關之測量的各種光測量器(包含測量用構件)。測量載台ST2係配置於投影光學系統PL之像面側,於該投影光學系統PL之像面側可在基座構件P上移動。測量載台ST2可藉由包含由控制裝置CONT所驅動之線性馬達等之測量載台驅動裝置SD2之驅動,在搭載著光測量器之狀態下,於基座構件BP上在XY平面內朝2維空間移動以及於θZ方向微旋轉。再者測量載台ST2亦能於Z軸方向、θX方向、以及θY方向移動。是以,測量載台ST2係與基板載台ST1同樣可在X軸、Y軸、Z軸、θX、θY以及θZ方向之6自由度方向移動。於測量載台ST2之側面固定設置有與測量載台ST2一同移動之移動鏡98。又,於與移動鏡98對向位置設置有雷射干涉儀99。測量載台ST2上之基板P的2維空間方向位置以及旋轉角係由雷射干涉儀99做即時測量,控制裝置CONT係依據雷射干涉儀99之測量結果來控制測量載台ST2。The measurement stage ST2 is equipped with various optical measuring instruments (including measuring members) that optically perform measurement related to exposure processing. The measurement stage ST2 is disposed on the image plane side of the projection optical system PL, and is movable on the base member P on the image plane side of the projection optical system PL. The measurement stage ST2 can be driven by the measurement stage drive unit SD2 including a linear motor driven by the control unit CONT, and is mounted on the base member BP in the XY plane while the optical measuring unit is mounted. The dimensional space moves and rotates slightly in the θZ direction. Further, the measurement stage ST2 can also move in the Z-axis direction, the θX direction, and the θY direction. Therefore, the measurement stage ST2 can move in the six-degree-of-freedom directions of the X-axis, the Y-axis, the Z-axis, the θX, the θY, and the θZ directions in the same manner as the substrate stage ST1. A moving mirror 98 that moves together with the measurement stage ST2 is fixedly disposed on the side of the measurement stage ST2. Further, a laser interferometer 99 is provided at a position opposite to the moving mirror 98. The two-dimensional spatial direction position and the rotation angle of the substrate P on the measurement stage ST2 are measured instantaneously by the laser interferometer 99, and the control unit CONT controls the measurement stage ST2 based on the measurement result of the laser interferometer 99.

控制裝置CONT係分別使用載台驅動裝置SD1、SD2使得基板載台ST1與測量載台ST2可分別在在基座構件BP上彼此獨立移動。控制裝置CONT可藉由將基板載台ST1移動至投影光學系統PL之下,使得基板載台ST1之上面95或是於該基板載台ST1所保持著之基板P之上面來與投影光學系統PL之下面LSA對向。同樣地控制裝置CONT可藉由將測量載台ST2移動至投影光學系統PL之下,使得測量載台ST2之上面97與投影光學系統PL之下面LSA對向。The control device CONT uses the stage driving devices SD1, SD2, respectively, so that the substrate stage ST1 and the measurement stage ST2 can move independently of each other on the base member BP. The control device CONT can move the substrate stage ST1 under the projection optical system PL such that the upper surface 95 of the substrate stage ST1 or the substrate P held by the substrate stage ST1 and the projection optical system PL Below the LSA is opposite. Similarly, the control unit CONT can move the measurement stage ST2 under the projection optical system PL such that the upper surface 97 of the measurement stage ST2 opposes the lower LSA of the projection optical system PL.

又,基板載台ST1與測量載台ST2係設置於互相並聯之位置,並以使得基板載台ST1之上面95(包含基板P之上面)與測量載台ST2之上面97成為大致相同高度位置的方式來設置。Further, the substrate stage ST1 and the measurement stage ST2 are disposed in parallel with each other such that the upper surface 95 of the substrate stage ST1 (including the upper surface of the substrate P) and the upper surface 97 of the measurement stage ST2 are substantially at the same height position. Way to set.

圖2係自上方觀看基板載台ST1與測量載台ST2之俯視圖。於圖2中,於測量載台ST2之上面97係設置有基準構件300做為光測量器(測量用構件)。基準構件300係在為了規定基板P對透過投影光學系統PL後之光罩M圖案像的對準位置,而就圖案像之投影位置與基板對準系統(未圖示)之檢測基準在XY平面內之位置關係(基線量)進行測量時所使用者。於基準構件300之上面301,第1基準標記MFM與第2基準標記PFM係以既定位置關係來形成。第1基準標記MFM係以例如特開平7-176468號公報所揭示般之VRA(視覺光柵對準:visual reticle alignment)方式之光罩對準系統來檢測。VRA方式之光罩對準系統,係對光罩照射光線,將以CCD攝像機所攝像之標記圖像資料做圖像處理來測量標記位置。又,第2基準標記PFM係以例如特開平6-65603號公報所揭示般之FIA(場像對準:field image alignment)方式之基板對準系統來檢測。FIA方式之基板對準系統係將基板P上之感光材不會感光之寬頻帶檢測光束照射於對象標記,將因來自該對象標記之反射光而在受光面成像之對象標記之像與未圖示之指標(於基板對準系統內所設置之指標板上之指標圖案)以攝像元件(CCD等)來攝像,將該等攝像訊號做圖像處理以測量標記位置。2 is a plan view of the substrate stage ST1 and the measurement stage ST2 viewed from above. In FIG. 2, a reference member 300 is provided as an optical measuring device (measuring member) on the upper surface 97 of the measuring stage ST2. The reference member 300 is an alignment position for specifying the substrate P to the image of the mask M after passing through the projection optical system PL, and the projection position of the pattern image and the substrate alignment system (not shown) are in the XY plane. The positional relationship (baseline amount) within the user is measured. On the upper surface 301 of the reference member 300, the first reference mark MFM and the second reference mark PFM are formed in a predetermined positional relationship. The first reference mark MFM is detected by a reticle alignment system of a VRA (visual reticle alignment) method as disclosed in Japanese Laid-Open Patent Publication No. H7-176468. The VRA-type reticle alignment system irradiates light to the reticle and performs image processing on the image of the image captured by the CCD camera to measure the mark position. In addition, the second reference mark PFM is detected by a substrate alignment system of the FIA (field image alignment) method disclosed in Japanese Laid-Open Patent Publication No. Hei 6-65603. The substrate alignment system of the FIA method is to irradiate the target mark with a wide-band detection light beam on which the photosensitive material on the substrate P is not exposed, and to image the image of the object imaged on the light-receiving surface by the reflected light from the target mark. The indicator (the index pattern on the indicator board provided in the substrate alignment system) is imaged by an imaging element (CCD or the like), and the image signals are image-processed to measure the mark position.

又,於測量載台ST2之上面97係設置有做為光測量器之上板。此上板係用以如特開昭57-117238號公報所揭示般對照度不均進行測量、或是用以如特開2001-267239號公報般對投影光學系統PL之曝光用光EL穿透率變動量進行測量之構成不均感測器400一部分之上板;如特開2002-14005號公報所揭示般之構成空間像測量感測器500一部分之上板;以及如特開平11-16816號公報所揭示般之構成照射量感測器(照度感測器)600一部分之上板。於測量載台ST2之上面97係配置著該等感測器400、50、600之上板的上面401、501、601。Further, on the upper surface of the measurement stage ST2, 97 is provided as an upper plate of the optical measuring instrument. The upper plate is used for measuring the unevenness of the contrast as disclosed in Japanese Laid-Open Patent Publication No. SHO 57-117238, or is used for the exposure light EL of the projection optical system PL as disclosed in Japanese Laid-Open Patent Publication No. 2001-267239. The rate fluctuation amount is measured to constitute a part of the upper plate of the unevenness sensor 400; a part of the upper surface of the space image measuring sensor 500 is disclosed as disclosed in Japanese Laid-Open Patent Publication No. 2002-14005; and, for example, Japanese Patent Laid-Open No. 11-16816 A portion of the illumination amount sensor (illuminance sensor) 600 is formed on the upper plate as disclosed in the publication. The upper surfaces 401, 501, and 601 of the upper plates of the sensors 400, 50, and 600 are disposed on the upper surface 97 of the measurement stage ST2.

於本實施形態中,包含各光測量器300、400、500、600之各上面301、401、501、601之測量載台ST2的上面97成為大致平坦面,測量載台ST2之上面97與各光測量器300、400、500、600之上面301、401、501、601係成為大致同一面。In the present embodiment, the upper surface 97 of the measurement stage ST2 including the upper surfaces 301, 401, 501, and 601 of each of the optical measuring instruments 300, 400, 500, and 600 is substantially flat, and the upper surface 97 of each of the measurement stages ST2 and each The upper surfaces 301, 401, 501, and 601 of the optical measuring instruments 300, 400, 500, and 600 are substantially the same surface.

於本實施形態中,在基準構件300上所形成之第1基準標記MFM係透過投影光學系統PL與液體LQ由光罩對準系統所檢測,第2基準標記PFM未透過投影光學系統PL與液體LQ即由基板對準系統所檢測。又在本實施形態中,由於係進行液浸曝光處理、亦即透過投影光學系統PL與液體LQ對基板P照射曝光用光EL來將基板P曝光,故使用曝光用光EL進行測量處理之不均感測器400、空間像測量感測器500、照射量感測器600等係對應於液浸曝光處理,透過投影光學系統PL與液體LQ接收曝光用光EL。In the present embodiment, the first reference mark MFM formed on the reference member 300 is transmitted through the projection optical system PL and the liquid LQ by the mask alignment system, and the second reference mark PFM is not transmitted through the projection optical system PL and the liquid. The LQ is detected by the substrate alignment system. Further, in the present embodiment, since the substrate P is exposed by the liquid immersion exposure processing, that is, the exposure light EL is applied to the substrate P through the projection optical system PL and the liquid LQ, the measurement processing using the exposure light EL is not performed. The average sensor 400, the aerial image measuring sensor 500, the irradiation amount sensor 600, and the like correspond to the liquid immersion exposure processing, and receive the exposure light EL through the projection optical system PL and the liquid LQ.

如上述般,測量載台ST2係用以進行關於曝光處理之測量處理的專用載台,不保持基板P。基板載台ST1未搭載著進行關於曝光處理之測量的光測量器。又,針對測量載台ST2,於例如特開平11-135400號公報、歐洲專利公開第1,041,357號公報等有更詳細的揭示。As described above, the measurement stage ST2 is a dedicated stage for performing measurement processing on the exposure processing, and does not hold the substrate P. The substrate stage ST1 is not mounted with an optical measuring device that performs measurement on exposure processing. Further, the measurement stage ST2 is disclosed in more detail, for example, in Japanese Laid-Open Patent Publication No. Hei 11-135400, and the European Patent Publication No. 1,041,357.

又,各感測器400、500、600可例如僅使得光學系統之一部分搭載於測量載台ST2,亦可使得感測器全部搭載於測量載台ST2。又,於測量載台ST2所搭載之光測量器並不限於上述各感測器400、500、600或基準構件300,只要是進行關於曝光處理之測量處理的光測量器(測量用構件),可將任意一者搭載於測量載台ST2。又,亦可將上述各感測器400、500、600或基準構件300等之一部分設置於基板載台ST1。Further, each of the sensors 400, 500, and 600 may be mounted on the measurement stage ST2 only by one of the optical systems, or may be mounted on the measurement stage ST2. In addition, the optical measuring device mounted on the measurement stage ST2 is not limited to the above-described respective sensors 400, 500, 600 or the reference member 300, and is an optical measuring device (measuring member) that performs measurement processing on exposure processing, Any one of them can be mounted on the measurement stage ST2. Further, one of the above-described respective sensors 400, 500, 600 or the reference member 300 may be provided on the substrate stage ST1.

又,於投影光學系統PL之像面側所配置之測量載台ST2係具有以不污染液體LQ的方式形成之既定區域100。既定區域100係設定於測量載台ST2之上面97的部分區域。於本實施形態中,既定區域100為測量載台ST2之上面97當中設有上述光測量器300、400、500、600以外之區域,設定於測量載台ST2之上面97的大致中央部。既定區域100之大小係設定成較液浸區域LR來得大。又,既定區域100係與各光測量器300、400、500、600之上面301、401、501、601成為大致同一面。於本實施形態中,測量載台ST2之上面97係包含既定區域100之上面、以及各光測量器300、400、500、600之各上面301、401、501、601。Further, the measurement stage ST2 disposed on the image plane side of the projection optical system PL has a predetermined area 100 formed so as not to contaminate the liquid LQ. The predetermined area 100 is set in a partial area of the upper surface 97 of the measurement stage ST2. In the present embodiment, the predetermined region 100 is a region other than the optical measuring devices 300, 400, 500, and 600 provided in the upper surface 97 of the measuring stage ST2, and is set at a substantially central portion of the upper surface 97 of the measuring stage ST2. The size of the predetermined area 100 is set to be larger than that of the liquid immersion area LR. Further, the predetermined area 100 is substantially flush with the upper surfaces 301, 401, 501, and 601 of the respective photometric devices 300, 400, 500, and 600. In the present embodiment, the upper surface 97 of the measurement stage ST2 includes the upper surface of the predetermined area 100 and the upper surfaces 301, 401, 501, and 601 of the respective optical measuring instruments 300, 400, 500, and 600.

於測量載台ST2之上面97的部分區域施行既定處理,藉由該既定處理,來形成不會污染液體LQ的既定區域100。此處,所謂「不會污染液體LQ」意指當既定區域100上配置著液體LQ之際,自既定區域100表面對液體LQ中所溶入(混入)之含異物的污染物質(金屬、有機離子、無機離子等)被抑制在既定容許量以下之狀態。換言之,形成既定區域100之材料,與液體LQ接觸時實質上不會發生混入液體LQ中之污染物質。是以,即使液體LQ與既定區域100接觸,仍可防止液體LQ之污染。再者,由於既定區域100之大小較液浸區域LR來得大,故在包含既定區域100之測量載台ST2之上面97形成液體LQ之液浸區域LR的情況,藉由將液浸區域LR形成在既定區域100之內側,可抑制液體LQ之污染。A predetermined process is performed on a partial region of the upper surface 97 of the measurement stage ST2, and the predetermined region 100 which does not contaminate the liquid LQ is formed by the predetermined process. Here, the term "no contamination liquid LQ" means a foreign matter-containing pollutant (metal, organic) which is dissolved (mixed) in the liquid LQ from the surface of the predetermined region 100 when the liquid LQ is disposed in the predetermined region 100. The ions, inorganic ions, and the like are suppressed to a state below the predetermined allowable amount. In other words, the material of the predetermined region 100 is formed, and the contaminant mixed into the liquid LQ does not substantially occur when it comes into contact with the liquid LQ. Therefore, even if the liquid LQ comes into contact with the predetermined area 100, the contamination of the liquid LQ can be prevented. Further, since the size of the predetermined area 100 is larger than that of the liquid immersion area LR, the liquid immersion area LR of the liquid LQ is formed on the upper surface 97 of the measurement stage ST2 including the predetermined area 100, and the liquid immersion area LR is formed. On the inner side of the predetermined area 100, contamination of the liquid LQ can be suppressed.

於本實施形態中,形成測量載台ST2之上面97的基材係使用陶瓷,在防止液體LQ污染之處理方面,係對於形成上面97之基材(陶瓷)上施行PFA(為四氟乙烯(C2 F4 )與過氟烷氧乙烯之共聚物)被覆處理(表面處理)。於以下之說明中,將被覆PFA之處理權宜地稱為「PFA處理」。In the present embodiment, the substrate on which the upper surface 97 of the measurement stage ST2 is formed is made of ceramic, and in the treatment for preventing liquid LQ contamination, PFA (for tetrafluoroethylene) is applied to the substrate (ceramic) on which the upper surface 97 is formed. C 2 F 4 ) Copolymer with perfluoroalkoxyethylene) coating treatment (surface treatment). In the following description, the processing of the covered PFA is expediently referred to as "PFA processing".

於本實施形態中,由於對測量載台ST2之上面97一部分區域施行PFA處理來形成既定區域100,故可抑制自既定區域100對液體LQ中溶入(混入)含異物的污染物質(金屬、有機離子、無機離子等)。是以,即使既定區域100與液體LQ接觸仍可防止液體LQ之污染,可降低對液體LQ所造成之影響。In the present embodiment, since the PFA process is performed on a part of the upper surface 97 of the measurement stage ST2 to form the predetermined region 100, it is possible to suppress the contamination (mixing) of the foreign matter-containing pollutants (metal, the liquid LQ from the predetermined region 100). Organic ions, inorganic ions, etc.). Therefore, even if the predetermined area 100 is in contact with the liquid LQ, the contamination of the liquid LQ can be prevented, and the influence on the liquid LQ can be reduced.

又PFA對於液體(水)具有撥液性(撥水性),即使於既定區域100上形成液浸區域LR,仍可使用液浸機構1將液浸區域LR之形狀、大小等維持在所需狀態。又,當進行自既定區域100上去除(回收)液體LQ之動作的情況,可防止液體LQ殘留在既定區域100上。Further, the PFA has liquid repellency (water repellency) with respect to the liquid (water), and the liquid immersion mechanism 1 can maintain the shape and size of the liquid immersion area LR in a desired state even if the liquid immersion area LR is formed in the predetermined area 100. . Further, when the operation of removing (recovering) the liquid LQ from the predetermined region 100 is performed, the liquid LQ can be prevented from remaining in the predetermined region 100.

又,此處雖於測量載台ST2之上面97的部分區域施行防止液體LQ污染之處理,惟亦可對測量載台ST2之上面97所有區域(包含光測量器300、400、500、600之各上面301、401、501、601)施行防止液體LQ污染之處理。此時,對於測量載台ST2之上面97當中設置光測量器300、400、500、600以外區域之處理與對於光測量器300、400、500、600之上面301、401、501、601之處理亦可不同。例如,亦可對測量載台ST2之上面97當中設有光測量器300、400、500、600以外區域施行PFA處理,對於光測量器300、400、500、600之上面301、401、501、601施行被覆PFA以外材料之處理。將光測量器300、400、500、600之上面301、401、501、601加以被覆之材料方面,以使用不會污染液體LQ、對液體LQ具有撥液性、且具有透光性之材料為佳。此種材料可舉出例如旭玻璃公司製造「賽脫普(註冊商標)」。藉此,即使在測量載台ST2之上面97當中既定區域100以外之區域配置液浸區域LR,仍可抑制液體LQ之污染,將液浸區域LR之形狀、大小等維持在所需狀態。又,當進行自測量載台ST2之上面97去除液體LQ之動作的情況,可防止液體LQ殘留於上面97。又,當光測量器之上面(例如301)被施行污染防止處理的情況,亦可將該上面之至少一部分做為既定區域100。Here, although the treatment for preventing liquid LQ contamination is performed in a partial region of the upper surface 97 of the measurement stage ST2, it is also possible to apply all the areas of the upper surface 97 of the measurement stage ST2 (including the light measuring devices 300, 400, 500, 600). Each of the upper surfaces 301, 401, 501, and 601) performs a process of preventing liquid LQ contamination. At this time, the processing of the area other than the optical measuring instruments 300, 400, 500, 600 in the upper surface 97 of the measuring stage ST2 and the processing of the upper surfaces 301, 401, 501, 601 of the optical measuring apparatuses 300, 400, 500, 600 are performed. It can also be different. For example, PFA processing may be performed on regions other than the optical measuring devices 300, 400, 500, 600 in the upper surface 97 of the measuring stage ST2, for the upper surfaces 301, 401, 501 of the optical measuring devices 300, 400, 500, 600, 601 is applied to cover materials other than PFA. The material to be coated on the upper surfaces 301, 401, 501, and 601 of the optical measuring instruments 300, 400, 500, and 600 is made of a material that does not contaminate the liquid LQ, has liquid repellency to the liquid LQ, and has light transmissivity. good. Such a material can be exemplified by "Saipu (registered trademark)" manufactured by Asahi Glass Co., Ltd. Thereby, even if the liquid immersion area LR is disposed in a region other than the predetermined area 100 in the upper surface 97 of the measurement stage ST2, contamination of the liquid LQ can be suppressed, and the shape, size, and the like of the liquid immersion area LR can be maintained in a desired state. Further, when the operation of removing the liquid LQ from the upper surface 97 of the measurement stage ST2 is performed, the liquid LQ can be prevented from remaining on the upper surface 97. Further, when the upper surface of the optical measuring device (for example, 301) is subjected to the contamination preventing treatment, at least a part of the upper surface may be used as the predetermined region 100.

又,在既定區域100(上面97)之表面處理所使用之材料並不限於PFA,只要可避免污染液體LQ者皆可,可配合形成測量載台ST2之上面97的基材、所使用之液體LQ的物性(種類)來適宜選擇。又此處係對於測量載台ST2之上面97之一部分施以表面處理來形成既定區域100,惟亦可例如於測量載台ST2之上面97的一部分形成開口(凹部),於該凹部內側配置PFA等所構成之板狀構件,以該板狀構件上面做為既定區域100。即使是在測量載台ST2之上面97的凹部配置板狀構件的情況,板狀構件之上面亦以平坦面為佳,使得板狀構件之上面與包含各光測量器之各上面301、401、501、601之測量載台ST2的上面97成為大致同一面乃為所希望者。Further, the material used for the surface treatment of the predetermined region 100 (the upper surface 97) is not limited to the PFA, and any substrate that can form the upper surface 97 of the measurement stage ST2 and the liquid used can be blended as long as it can avoid contamination of the liquid LQ. The physical properties (types) of LQ are suitable for selection. Here, a portion of the upper surface 97 of the measurement stage ST2 is subjected to a surface treatment to form a predetermined region 100. Alternatively, for example, an opening (recess) may be formed in a portion of the upper surface 97 of the measurement stage ST2, and a PFA may be disposed inside the concave portion. The plate-like member is formed such that the upper surface of the plate-like member is a predetermined region 100. Even in the case where the plate-like member is disposed in the recessed portion of the upper surface 97 of the measuring stage ST2, the upper surface of the plate-shaped member is preferably a flat surface, so that the upper surface of the plate-shaped member and the upper surfaces 301, 401 including the respective optical measuring instruments are It is desirable that the upper surface 97 of the measurement stage ST2 of 501 and 601 is substantially the same surface.

圖3所示係液體LQ之液浸區域LR在基板載台ST1與測量載台ST2之間移動之狀態之圖。如圖3所示般,於投影光學系統PL之像面側(第1光學元件LS1之下)所形成之液浸區域LR可在基板載台ST1與測量載台ST2之間移動。在移動液浸區域LR之際,控制裝置CONT會使用載台驅動裝置SD1、SD2,於基板載台ST1與測量載台ST2接近或接觸之狀態下,於包含投影光學系統PL正下方位置之區域內使得基板載台ST1與測量載台ST2一起在XY平面內移動。控制裝置CONT可藉由將基板載台ST1與測量載台ST2一起移動,在投影光學系統PL與基板載台ST1之上面95和測量載台ST2之上面97中至少一者之間保持著液體LQ之狀態下,使得液浸區域LR在基板載台ST1之上面95與測量載台ST2之上面97之間移動。藉此,可一邊抑制液體LQ自基板載台ST1與測量載台ST2之間隙(空隙)流出、一邊在投影光學系統PL之像面側光路空間K1為液體LQ所充滿之狀態下使得液浸區域LR在基板載台ST1上與測量載台ST2上之間移動。Fig. 3 is a view showing a state in which the liquid immersion area LR of the liquid LQ moves between the substrate stage ST1 and the measurement stage ST2. As shown in FIG. 3, the liquid immersion area LR formed on the image surface side of the projection optical system PL (below the first optical element LS1) is movable between the substrate stage ST1 and the measurement stage ST2. When the liquid immersion area LR is moved, the control unit CONT uses the stage driving devices SD1 and SD2 to be in an area close to or in contact with the measurement stage ST2 in the state where the substrate stage ST1 is close to or in contact with the measurement stage ST2. The substrate stage ST1 is moved together with the measurement stage ST2 in the XY plane. The control unit CONT can hold the liquid LQ between at least one of the upper surface 95 of the projection optical system PL and the substrate stage ST1 and the upper surface 97 of the measurement stage ST2 by moving the substrate stage ST1 together with the measurement stage ST2. In this state, the liquid immersion area LR is moved between the upper surface 95 of the substrate stage ST1 and the upper surface 97 of the measurement stage ST2. By this, it is possible to prevent the liquid LQ from flowing out of the gap (void) between the substrate stage ST1 and the measurement stage ST2, and to make the liquid immersion area in a state where the image-side optical path space K1 of the projection optical system PL is filled with the liquid LQ. The LR moves between the substrate stage ST1 and the measurement stage ST2.

藉此,無需經過液體LQ之全回收、再度供應此等步驟,即可使得液體LQ之液浸區域LR在基板載台ST1之上面95與測量載台ST2之上面97之間移動,故可縮短基板載台ST1中某基板P之曝光動作結束後到下一個基板P之曝光動作開始為止之時間,可謀求生產量之提升。又,由於投影光學系統PL之像面側經常性存在著液體LQ,故可有效地防止液體LQ之附著痕跡(所謂的水痕)之發生。Thereby, the liquid immersion area LR of the liquid LQ can be moved between the upper surface 95 of the substrate stage ST1 and the upper surface 97 of the measurement stage ST2 without the need to completely recover the liquid LQ, and thus can be shortened. When the exposure operation of one of the substrates P in the substrate stage ST1 is completed and the exposure operation of the next substrate P is started, the throughput can be improved. Further, since the liquid LQ is often present on the image side of the projection optical system PL, the occurrence of adhesion marks (so-called water marks) of the liquid LQ can be effectively prevented.

其次,參照圖1針對液浸機構1之液體供應機構10以及液體回收機構20做說明。液體供應機構10係將液體LQ供應於投影光學系統PL之像面側。液體供應機構10具備可送出液體LQ之液體供應部11以及一端與液體供應部11連接之供應管13。於供應管13之中途係設置有使得供應管13之流路開閉之閥13B。閥13B之動作係由控制裝置CONT所控制。供應管13之另一端係與嘴構件70連接著。於嘴構件70之內部係形成有用以將供應管13之另一端與供應口12做連接之內部流路(供應流路)。於本實施形態中,液體供應機構10係供應純水,液體供應部11具備純水製造裝置16以及對供應之液體(純水)LQ之溫度進行調整之調溫裝置17等。再者,液體供應部11尚具備收容液體LQ之槽、加壓泵、以及將液體LQ中之異物移除之過濾器單元等。液體供應部11之液體供應動作係由控制裝置CONT所控制。又純水製造裝置方面,亦可不於曝光裝置EX設置純水製造裝置,而是使用配置曝光裝置EX之工廠的純水製造裝置。又,無需將液體供應機構10之槽、加壓泵、過濾器單元等全部設置於曝光裝置本體EX,而可取代使用設置曝光裝置本體EX之工廠等之設備。Next, the liquid supply mechanism 10 and the liquid recovery mechanism 20 of the liquid immersion mechanism 1 will be described with reference to Fig. 1 . The liquid supply mechanism 10 supplies the liquid LQ to the image plane side of the projection optical system PL. The liquid supply mechanism 10 includes a liquid supply unit 11 that can deliver the liquid LQ, and a supply tube 13 that is connected to the liquid supply unit 11 at one end. A valve 13B that opens and closes the flow path of the supply pipe 13 is provided in the middle of the supply pipe 13. The action of valve 13B is controlled by control unit CONT. The other end of the supply tube 13 is connected to the nozzle member 70. An internal flow path (supply flow path) for connecting the other end of the supply pipe 13 to the supply port 12 is formed inside the nozzle member 70. In the present embodiment, the liquid supply mechanism 10 supplies pure water, and the liquid supply unit 11 includes a pure water producing device 16 and a temperature regulating device 17 that adjusts the temperature of the supplied liquid (pure water) LQ. Further, the liquid supply unit 11 further includes a tank for accommodating the liquid LQ, a pressure pump, and a filter unit for removing foreign matter in the liquid LQ. The liquid supply operation of the liquid supply unit 11 is controlled by the control unit CONT. Further, in the pure water producing apparatus, a pure water producing apparatus may be used instead of the exposure apparatus EX, and a pure water producing apparatus of the factory in which the exposure apparatus EX is disposed may be used. Further, it is not necessary to provide all of the tank, the pressure pump, the filter unit, and the like of the liquid supply mechanism 10 to the exposure apparatus main body EX, and instead of using equipment such as a factory in which the exposure apparatus main body EX is provided.

又在本實施形態中,於供應管13所設置之閥13B係採用例如於因停電等造成曝光裝置EX(控制裝置CONT)之驅動源(電源)停止時將供應管13之流路做機械性閉塞之所謂的常閉方式。藉此,即使發生停電等異常的情況,也可防止液體LQ自供應口12漏出。Further, in the present embodiment, the valve 13B provided in the supply pipe 13 is made to mechanically flow the supply pipe 13 when the drive source (power supply) of the exposure device EX (control device CONT) is stopped due to a power failure or the like. The so-called normally closed mode of occlusion. Thereby, even if an abnormality such as a power failure occurs, the liquid LQ can be prevented from leaking from the supply port 12.

液體回收機構20係回收投影光學系統PL像面側之液體LQ。液體回收機構20具備可回收液體LQ之液體回收部21、一端與液體回收部21連接之回收管23。於回收管23之中途設置有可開閉回收管23流路之閥23B。閥23B之動作係由控制裝置CONT所控制。回收管23之另一端係與嘴構件70連接著。於嘴構件70之內部係形成有將回收管23之另一端與回收口22做連接之內部流路(回收流路)。液體回收部21係具備例如真空泵等之真空系統(吸引裝置)、將回收之液體LQ與氣體加以分離之氣液分離器、以及將回收之液體LQ加以收容的槽等。又,無需將液體回收機構20之真空系統、氣液分離器、以及槽全部設置於曝光裝置本體EX,而可取代使用設置曝光裝置本體EX之工廠等之設備。The liquid recovery mechanism 20 recovers the liquid LQ on the image plane side of the projection optical system PL. The liquid recovery mechanism 20 includes a liquid recovery unit 21 that can recover the liquid LQ, and a recovery pipe 23 that is connected to the liquid recovery unit 21 at one end. A valve 23B that can open and close the flow path of the recovery pipe 23 is provided in the middle of the recovery pipe 23. The operation of the valve 23B is controlled by the control unit CONT. The other end of the recovery pipe 23 is connected to the nozzle member 70. An internal flow path (recovery flow path) for connecting the other end of the recovery pipe 23 to the recovery port 22 is formed in the inside of the nozzle member 70. The liquid recovery unit 21 includes a vacuum system (suction device) such as a vacuum pump, a gas-liquid separator that separates the recovered liquid LQ from the gas, and a tank that stores the recovered liquid LQ. Further, it is not necessary to provide all of the vacuum system, the gas-liquid separator, and the tank of the liquid recovery mechanism 20 to the exposure apparatus main body EX, and it is possible to use an apparatus such as a factory in which the exposure apparatus main body EX is installed.

供應液體LQ之供應口12以及回收液體LQ之回收口22係於嘴構件70之下面70A處形成。嘴構件70之下面70A係設置於可與基板P之上面、基板載台ST1之上面95、以及測量載台ST2之上面97對向之位置。嘴構件70係以圍繞第1光學元件LS1側面的方式所設置之環狀構件,供應口12係於嘴構件70之下面70A以圍繞投影光學系統PL之第1光學元件LS1(投影光學系統PL之光軸AX)的方式設置複數個。又,回收口22係於嘴構件70之下面70A對第1光學元件LS1較供應口12更離開外側設置,以圍繞第1光學元件LS1與供應口12的方式來設置。The supply port 12 for supplying the liquid LQ and the recovery port 22 for recovering the liquid LQ are formed at the lower surface 70A of the nozzle member 70. The lower surface 70A of the nozzle member 70 is disposed at a position opposite to the upper surface of the substrate P, the upper surface 95 of the substrate stage ST1, and the upper surface 97 of the measurement stage ST2. The nozzle member 70 is an annular member provided to surround the side surface of the first optical element LS1, and the supply port 12 is attached to the lower surface 70A of the nozzle member 70 to surround the first optical element LS1 of the projection optical system PL (projection optical system PL) The optical axis AX) is set in a plurality of ways. Further, the recovery port 22 is provided on the lower surface 70A of the nozzle member 70 so that the first optical element LS1 is disposed outside the supply port 12 so as to surround the first optical element LS1 and the supply port 12.

再者,控制裝置CONT係使用液體供應機構10對基板P上供應既定量之液體LQ,並使用液體回收機構20將基板P上之液體LQ做既定量回收,藉此,於基板P上局部性形成液體LQ之液浸區域LR。於形成液體LQ之液浸區域LR之際,控制裝置CONT係分別驅動液體供應部11與液體回收部21。若在控制裝置CONT的控制下,自液體供應部11送出液體LQ,則自液體供應部11所送出之液體LQ於流經供應管13之後會透過嘴構件70之供應流路214而從供應口12被供應於投影光學系統PL之像面側。又,若在控制裝置CONT之控制下驅動液體回收部21,則投影光學系統PL之像面側液體LQ會透過回收口22而流入嘴構件70之回收流路,於流經回收管23之後,為液體回收部21所回收。Further, the control device CONT supplies a predetermined amount of liquid LQ to the substrate P by using the liquid supply mechanism 10, and uses the liquid recovery mechanism 20 to quantitatively recover the liquid LQ on the substrate P, thereby localizing on the substrate P. A liquid immersion area LR of liquid LQ is formed. When the liquid immersion area LR of the liquid LQ is formed, the control unit CONT drives the liquid supply unit 11 and the liquid recovery unit 21, respectively. When the liquid LQ is sent from the liquid supply unit 11 under the control of the control unit CONT, the liquid LQ sent from the liquid supply unit 11 passes through the supply line 13 and then passes through the supply flow path 214 of the nozzle member 70 from the supply port. 12 is supplied to the image plane side of the projection optical system PL. When the liquid recovery unit 21 is driven under the control of the control unit CONT, the image side liquid LQ of the projection optical system PL passes through the recovery port 22 and flows into the recovery flow path of the nozzle member 70, and after flowing through the recovery tube 23, It is recovered by the liquid recovery unit 21.

於本實施形態中,以液體回收機構20所回收之液體LQ係返回液體供應機構10之液體供應部11。亦即本實施形態之曝光裝置EX係具備使得液體LQ在液體供應機構10與液體回收機構20之間循環之循環系統。返回液體供應機構10之液體供應部11的液體LQ,以純水製造裝置16所純化之後,再次供應至投影光學系統PL之像面側(基板P上)。又,以液體回收機構20所回收之液體LQ可全部返回液體供應機構10,亦可部分返回液體供應機構10。或者,以液體回收機構20所回收之液體LQ亦可不返回液體供應機構10,而是將自其他供應源所供應之液體LQ或是自來水經純水製造裝置16純化之後供應至投影光學系統PL之像面側。又,嘴構件70等液浸機構1之構造並不限於上述構造,亦可使用例如歐洲專利公開第1420298號公報、國際公開第2004/055803號公報、國際公開第2004/057589號公報、國際公開第2004/057590號公報、國際公開第2005/029559號公報所記載者。In the present embodiment, the liquid LQ recovered by the liquid recovery mechanism 20 is returned to the liquid supply unit 11 of the liquid supply mechanism 10. That is, the exposure apparatus EX of the present embodiment is provided with a circulation system that circulates the liquid LQ between the liquid supply mechanism 10 and the liquid recovery mechanism 20. The liquid LQ returned to the liquid supply unit 11 of the liquid supply mechanism 10 is purified by the pure water producing apparatus 16 and then supplied again to the image surface side (on the substrate P) of the projection optical system PL. Further, the liquid LQ recovered by the liquid recovery mechanism 20 may all be returned to the liquid supply mechanism 10 or partially returned to the liquid supply mechanism 10. Alternatively, the liquid LQ recovered by the liquid recovery mechanism 20 may not be returned to the liquid supply mechanism 10, but may be supplied to the projection optical system PL after the liquid LQ or tap water supplied from another supply source is purified by the pure water production device 16. Image side. In addition, the structure of the liquid immersion mechanism 1 such as the nozzle member 70 is not limited to the above-described structure, and for example, European Patent Publication No. 1420298, International Publication No. 2004/055803, International Publication No. 2004/057589, and International Publications are also available. The person described in the publication No. 2004/057590 and International Publication No. 2005/029559.

其次,參照圖4來說明液體供應部11。圖4係詳細顯示液體供應部11之構成之圖。液體供應部11具備純水製造裝置16、調溫裝置17(對於純水製造裝置16所製造之液體LQ之溫度進行調整者)。純水製造裝置16具備:純水製造器161(將含有例如浮游物或雜質之水純化來製造既定純度之純水)、超純水製造器162(自純水製造器161所製造之純水進一步去除雜質來製造高純度純水(超純水)者)。純水製造器161(或是超純水製造器162)係具備離子交換膜或粒子過濾器等之液體改質構件、以及紫外線照射裝置(UV燈)等液體改質裝置,藉由該等液體改質構件與液體改質裝置,將液體之比電阻值、異物(微粒子、氣泡)之量、全有機物碳、以及生菌量等調整為所需值。Next, the liquid supply unit 11 will be described with reference to Fig. 4 . Fig. 4 is a view showing the configuration of the liquid supply unit 11 in detail. The liquid supply unit 11 includes a pure water producing device 16 and a temperature regulating device 17 (which adjusts the temperature of the liquid LQ produced by the pure water producing device 16). The pure water producing apparatus 16 includes a pure water generator 161 (purified water containing a float or an impurity, for example, to produce pure water of a predetermined purity), and an ultrapure water maker 162 (pure water produced by the pure water generator 161). Further removing impurities to produce high-purity pure water (ultra-pure water)). The pure water generator 161 (or the ultrapure water generator 162) includes a liquid reforming member such as an ion exchange membrane or a particle filter, and a liquid reforming device such as an ultraviolet irradiation device (UV lamp), by which the liquid is The reforming member and the liquid reforming device adjust the specific resistance value of the liquid, the amount of foreign matter (fine particles, bubbles), the total organic matter carbon, and the amount of bacteria to a desired value.

又,如上述般,由液體回收機構20所回收之液體LQ係返回液體供應機構10之液體供應部11。具體而言,由液體回收機構20所回收之液體LQ係透過返管18供應至液體供應部11之純水製造裝置16(純水製造器161)。於返管18係設有將該返管18之流路開閉之第1閥18B。純水製造裝置16係將透過返管18返回之液體LQ以上述液體改質構件與液體改質裝置等來純化之後,供應至調溫裝置17。又,於液體供應部11之純水製造裝置16(純水製造器161)係透過供應管19連接著功能液供應裝置120。功能液供應裝置120可供應功能液LK(具有與用以形成液浸區域LR之液體LQ為不同之既定功能)。於本實施形態中,功能液供應裝置120係供應具有洗淨作用或是殺菌作用、或是兼具兩者作用之功能液LK。在功能液LK方面可使用例如臭氧水、含有界面活性劑、抗菌劑、殺菌劑、除菌劑等之水溶液或是水溶性有機溶劑。於本實施形態中,功能液LK係使用過氧化氫水。於供應管19係設有將該供應管19之流路開閉之第2閥19B。控制裝置CONT在運作第1閥18B使得返管18之流路開通而供應液體LQ時,運作第2閥19B使得供應管19之流路封閉以停止功能液LK之供應。另一方面,控制裝置CONT在運作第2閥19B使得供應管19之流路開通而供應功能液LK時,運作第1閥18B使得返管18之流路封閉以停止液體LQ之供應。Further, as described above, the liquid LQ recovered by the liquid recovery mechanism 20 is returned to the liquid supply unit 11 of the liquid supply mechanism 10. Specifically, the liquid LQ recovered by the liquid recovery mechanism 20 is supplied to the pure water producing device 16 (pure water maker 161) of the liquid supply unit 11 through the return pipe 18. The return pipe 18 is provided with a first valve 18B that opens and closes the flow path of the return pipe 18. The pure water producing apparatus 16 purifies the liquid LQ returned through the return pipe 18 by the liquid reforming member, the liquid reforming device, or the like, and then supplies it to the temperature regulating device 17. Further, the pure water producing device 16 (pure water maker 161) of the liquid supply unit 11 is connected to the functional liquid supply device 120 through the supply pipe 19. The functional fluid supply device 120 can supply the functional liquid LK (having a predetermined function different from the liquid LQ used to form the liquid immersion area LR). In the present embodiment, the functional liquid supply device 120 is supplied with a functional liquid LK having a cleaning action or a sterilizing action or both. As the functional liquid LK, for example, ozone water, an aqueous solution containing a surfactant, an antibacterial agent, a bactericide, a disinfectant or the like or a water-soluble organic solvent can be used. In the present embodiment, hydrogen peroxide water is used as the functional liquid LK. The supply pipe 19 is provided with a second valve 19B that opens and closes the flow path of the supply pipe 19. When the control device CONT operates the first valve 18B so that the flow path of the return pipe 18 is opened to supply the liquid LQ, the second valve 19B is operated to close the flow path of the supply pipe 19 to stop the supply of the functional liquid LK. On the other hand, when the control device CONT operates the second valve 19B to open the flow path of the supply pipe 19 to supply the functional liquid LK, the first valve 18B is operated to close the flow path of the return pipe 18 to stop the supply of the liquid LQ.

調溫裝置17係對於以純水製造裝置16所製造而供應於供應管13之液體(純水)LQ進行溫度調整者,其一端係與純水製造裝置16(超純水製造器162)連接,另一端係與供應管13連接,對於以純水製造裝置16所製造之液體LQ進行溫度調整後,將經過溫度調整之液體LQ送出至供應管13。調溫裝置17具備對於純水製造裝置16之超純水製造器162所供應之液體LQ的溫度做粗調之粗調溫器171、於粗調溫器171之流路下游側(供應管13側)所設之對於流經供應管13側之液體LQ每單位時間的量進行控制之稱為質量流調節器的流量控制器172、使得通過流量控制器172之液體LQ中的溶解氣體濃度(溶氧濃度、溶氮濃度)降低之脫氣裝置173、將經過脫氣裝置173脫氣後之液體LQ中的異物(微粒子、氣泡)予以移除之過濾器174、以及對於通過過濾器174之液體LQ的溫度進行微調之微調溫器175。The temperature adjustment device 17 is temperature-adjusted to the liquid (pure water) LQ supplied from the pure water production device 16 and supplied to the supply pipe 13, and one end thereof is connected to the pure water production device 16 (ultra-pure water maker 162). The other end is connected to the supply pipe 13, and after temperature adjustment of the liquid LQ manufactured by the pure water producing apparatus 16, the temperature-adjusted liquid LQ is sent out to the supply pipe 13. The temperature adjustment device 17 includes a coarse thermostat 171 for coarsely adjusting the temperature of the liquid LQ supplied from the ultrapure water maker 162 of the pure water producing device 16, and a downstream side of the flow path of the coarse thermostat 171 (supply tube 13) The side is provided with a flow controller 172 called a mass flow regulator for controlling the amount of liquid LQ per unit time flowing through the supply pipe 13 side, so that the dissolved gas concentration in the liquid LQ passing through the flow controller 172 ( a deaerator 173 having a reduced dissolved oxygen concentration and a dissolved nitrogen concentration), a filter 174 for removing foreign matter (fine particles, bubbles) in the liquid LQ deaerated by the deaerator 173, and a filter 174 for passing through the filter 174 The thermostat 175 is fine-tuned to the temperature of the liquid LQ.

粗調溫器171係將自超純水製造器162所送出之液體LQ的溫度對於目標溫度(例如23℃)以例如±0.1℃左右之粗精度做溫度調整。流量控制器172係配置於粗調溫器171與脫氣裝置173之間,對於在粗調溫器171經過溫度調整之液體LQ在脫氣裝置173側每單位時間之流量進行控制。The coarse temperature controller 171 adjusts the temperature of the liquid LQ sent from the ultrapure water generator 162 to a target temperature (for example, 23 ° C) with a coarse precision of, for example, about ± 0.1 ° C. The flow rate controller 172 is disposed between the coarse temperature controller 171 and the deaerator 173, and controls the flow rate per unit time of the liquid LQ that has undergone temperature adjustment in the coarse temperature controller 171 on the side of the deaerator 173.

脫氣裝置173係於粗調溫器171與微調溫器175之間、具體而言係於流量控制器172與過濾器174之間配置,將自流量控制器172所送出之液體LQ脫氣,使得液體LQ中之溶解氣體濃度(包含溶氧濃度、溶氮濃度)降低。在脫氣裝置173方面可使用對供應之液體LQ減壓來脫氣之減壓裝置等眾知的脫氣裝置。又,亦可使用下述裝置:使用中空絲膜過濾器等過濾器將液體LQ做氣液分離,分離出之氣體成分以真空系統來去除之包含脫氣過濾器之裝置;以離心力將液體LQ做氣液分離,分離出之氣體成分以真空系統來去除之包含脫氣泵之裝置等。脫氣裝置173藉由包含上述脫氣過濾器之液體改質構件或是包含上述脫氣泵之液體改質裝置來將溶解氣體濃度調整為所需值。The deaerator 173 is disposed between the coarse thermostat 171 and the micro-temperature regulator 175, specifically between the flow controller 172 and the filter 174, and degases the liquid LQ sent from the flow controller 172. The dissolved gas concentration (including the dissolved oxygen concentration and the dissolved nitrogen concentration) in the liquid LQ is lowered. As the deaerator 173, a known deaerator such as a decompression device that degases the supplied liquid LQ to degas the gas can be used. Further, a device in which a liquid LQ is separated by a filter such as a hollow fiber membrane filter, a gas component separated by a vacuum system to remove a degassing filter, and a liquid LQ by centrifugal force may be used. The gas-liquid separation is performed, and the separated gas component is removed by a vacuum system, and the device including the degassing pump is used. The deaerator 173 adjusts the dissolved gas concentration to a desired value by a liquid reforming member including the above-described degassing filter or a liquid reforming device including the above described degassing pump.

過濾器174係於粗調溫器171與微調溫器175之間、具體而言係於脫氣裝置173與微調溫器175之間配置,將自脫氣裝置173所送出之液體LQ中之異物移除。當通過流量控制器172或脫氣裝置173之時,液體LQ中可能混有些許異物(particle),而藉由在流量控制器172或脫氣裝置173之下游側(供應管13側)設置過濾器174,可藉由該過濾器174移除異物。在過濾器174方面可使用中空絲系膜過濾器或是粒子過濾器等眾知之過濾器。包含上述粒子過濾器等液體改質構件之過濾器174係將液體中之異物(微粒子、氣泡)之量調整在容許值以下。The filter 174 is disposed between the coarse thermostat 171 and the micro-temperature regulator 175, specifically between the deaerator 173 and the micro-temperature regulator 175, and the foreign matter in the liquid LQ sent from the deaeration device 173 Remove. When passing through the flow controller 172 or the degasser 173, a small amount of foreign matter may be mixed in the liquid LQ, and filtration is set on the downstream side of the flow controller 172 or the degasser 173 (on the side of the supply pipe 13). The filter 174 can remove foreign matter by the filter 174. As the filter 174, a known filter such as a hollow fiber membrane filter or a particle filter can be used. The filter 174 including the liquid reforming member such as the particle filter adjusts the amount of foreign matter (fine particles, bubbles) in the liquid to be equal to or lower than the allowable value.

微調溫器175係於粗調溫器171與供應管13之間、具體而言係於過濾器174與供應管13之間配置著,可高精度進行液體LQ之溫度調整。例如微調溫器175將自過濾器174所送出之液體LQ的溫度(溫度安定性、溫度均勻性)對目標溫度以±0.01℃~±0.001℃左右之高精度做微調。於本實施形態中,由於構成調溫裝置17之複數儀器當中之微調溫器175係配置於與液體LQ之供應對象的基板P最接近之位置,故可將經過高精度溫度調整後之液體LQ供應於基板P上。The micro-temperature regulator 175 is disposed between the coarse temperature controller 171 and the supply pipe 13, specifically, between the filter 174 and the supply pipe 13, and can accurately adjust the temperature of the liquid LQ. For example, the thermostat 175 finely adjusts the temperature (temperature stability and temperature uniformity) of the liquid LQ sent from the filter 174 to a target temperature with a high precision of about ±0.01°C to ±0.001°C. In the present embodiment, the micro-temperature regulator 175 among the plurality of instruments constituting the temperature adjustment device 17 is disposed at the position closest to the substrate P to which the liquid LQ is supplied, so that the liquid LQ after the high-precision temperature adjustment can be performed. It is supplied on the substrate P.

又,過濾器174在調溫裝置17內以配置於粗調溫器171與微調溫器175之間為佳,亦可配置於調溫裝置17內之不同場所,亦可配置於調溫裝置17之外。Further, the filter 174 is preferably disposed between the coarse temperature controller 171 and the micro-temperature regulator 175 in the temperature adjustment device 17, and may be disposed in different places in the temperature adjustment device 17, or may be disposed in the temperature adjustment device 17 Outside.

如上述般,純水製造器161、超純水製造器162、脫氣裝置173、以及過濾器174等分別具備液體改質構件以及液體改質裝置,具有對於液體LQ之性質與成分中至少一者進行調整之調整裝置的作用。該等各裝置161、162、173、174係於液體供應機構10中之液體流經流路之既定位置設置著。又,於本實施形態中,雖對於1台之曝光裝置EX配置1台液體供應部11(參照圖1),惟並不侷限於此,1台液體供應部11亦可為複數台之曝光裝置EX所共用。藉此,可節省液體供應部11所佔有之面積(設置面積)。或是,亦可將構成液體供應部11之純水製造裝置16與調溫裝置17分割,使得複數曝光裝置EX共用純水製造裝置16,調溫裝置17並不配置於每一台曝光裝置EX。藉此,可節省設置面積,且可對每一曝光裝置進行溫度管理。再者於上述情況中,若將被複數曝光裝置EX所共用之液體供應部11或純水製造裝置16配置於與設置曝光裝置EX之地面為不同之地面(例如地下),可更有效地運用設置曝光裝置EX之真空室的空間。As described above, the pure water generator 161, the ultrapure water generator 162, the deaerator 173, and the filter 174 are respectively provided with a liquid reforming member and a liquid reforming device, and have at least one of properties and compositions for the liquid LQ. The role of the adjustment device for adjustment. The devices 161, 162, 173, and 174 are disposed at predetermined positions in which the liquid in the liquid supply mechanism 10 flows through the flow path. Further, in the present embodiment, one liquid supply unit 11 (see FIG. 1) is disposed in one exposure apparatus EX, but the liquid supply unit 11 may be a plurality of exposure apparatuses. Shared by EX. Thereby, the area (arrangement area) occupied by the liquid supply unit 11 can be saved. Alternatively, the pure water producing device 16 constituting the liquid supply portion 11 may be divided into the temperature regulating device 17, so that the plurality of exposure devices EX share the pure water producing device 16, and the temperature adjusting device 17 is not disposed in each of the exposure devices EX. . Thereby, the installation area can be saved, and temperature management can be performed for each exposure apparatus. Further, in the above case, if the liquid supply unit 11 or the pure water producing apparatus 16 shared by the plurality of exposure apparatuses EX is disposed on a ground (for example, underground) different from the floor on which the exposure apparatus EX is installed, it can be used more effectively. The space of the vacuum chamber of the exposure device EX is set.

其次,參照圖5來說明測量裝置60。測量裝置60係針對在投影光學系統PL與於投影光學系統PL像面側所配置之物體之間所充滿之液體LQ之性質與成分當中至少一者進行測量。如上述般,由於本實施形態中液體LQ為水,故於以下說明中,將液體LQ之性質與成分當中至少一者權宜稱為「水質」。Next, the measuring device 60 will be described with reference to Fig. 5 . The measuring device 60 measures at least one of the properties and components of the liquid LQ filled between the projection optical system PL and an object disposed on the image plane side of the projection optical system PL. As described above, since the liquid LQ is water in the present embodiment, in the following description, at least one of the properties and the components of the liquid LQ is referred to as "water quality".

測量裝置60係設置於回收管23之中途,對藉由液體回收機構20所回收之液體LQ進行測量。由於液體回收機構20係將在投影光學系統PL與物體之間所充滿之液體LQ透過嘴構件70之回收口22來回收,故測量裝置60係針對由嘴構件70之回收口22所回收而流經回收管23之液體LQ、亦即於投影光學系統PL與物體之間所充滿之液體LQ的水質(性質與成分當中至少一者)進行測量。The measuring device 60 is disposed in the middle of the recovery pipe 23, and measures the liquid LQ recovered by the liquid recovery mechanism 20. Since the liquid recovery mechanism 20 recovers the liquid LQ filled between the projection optical system PL and the object through the recovery port 22 of the nozzle member 70, the measuring device 60 is flowed for recovery by the recovery port 22 of the nozzle member 70. The liquid LQ of the recovery pipe 23, that is, the water quality (at least one of the properties and the composition) of the liquid LQ filled between the projection optical system PL and the object is measured.

如參照圖3所說明般,液體LQ之液浸區域LR可於基板載台ST1上與測量載台ST2上之間移動。當使用測量裝置60來測量液體LQ之水質時,控制裝置CONT在使得投影光學系統PL與測量載台ST2對向之狀態下,使用液浸機構1進行液體LQ之供應與回收,將投影光學系統PL與測量載台ST2之間的光路空間K1以液體LQ充滿。更具體而言,當使用測量裝置60來測量液體LQ之水質時,控制裝置CONT在投影光學系統PL與測量載台ST2之上面97之既定區域100之間充滿液體LQ。測量裝置60係對於在投影光學系統PL與測量載台ST2之既定區域100之間所充滿之液體LQ的水質進行測量。As described with reference to Fig. 3, the liquid immersion area LR of the liquid LQ is movable between the substrate stage ST1 and the measurement stage ST2. When the measuring device 60 is used to measure the water quality of the liquid LQ, the control device CONT performs the supply and recovery of the liquid LQ using the liquid immersion mechanism 1 in a state where the projection optical system PL is opposed to the measurement stage ST2, and the projection optical system The optical path space K1 between the PL and the measurement stage ST2 is filled with the liquid LQ. More specifically, when the measuring device 60 is used to measure the water quality of the liquid LQ, the control device CONT is filled with the liquid LQ between the projection optical system PL and the predetermined region 100 of the upper surface 97 of the measurement stage ST2. The measuring device 60 measures the water quality of the liquid LQ filled between the projection optical system PL and the predetermined region 100 of the measurement stage ST2.

如上述般,測量載台ST2之既定區域100係以不被液體LQ污染的方式來形成。是以,測量裝置60係對於在投影光學系統PL與既定區域100之間所充滿之防止污染的液體LQ進行測量。是以,測量裝置60可對於在投影光學系統PL像面側之光路空間K1所充滿之液體LQ(供應於光路空間K1之液體LQ)之真正水質做精確的測量。測量裝置60之測量結果係輸出至控制裝置CONT。控制裝置CONT依據測量裝置60之測量結果,來判斷於投影光學系統PL與測量載台ST2之既定區域100之間所充滿之液體LQ的狀態(水質)是否為所需狀態。As described above, the predetermined area 100 of the measurement stage ST2 is formed so as not to be contaminated by the liquid LQ. Therefore, the measuring device 60 measures the liquid LQ for preventing contamination which is filled between the projection optical system PL and the predetermined region 100. Therefore, the measuring device 60 can accurately measure the true water quality of the liquid LQ (the liquid LQ supplied to the optical path space K1) filled in the optical path space K1 on the image plane side of the projection optical system PL. The measurement result of the measuring device 60 is output to the control device CONT. The control unit CONT determines whether or not the state (water quality) of the liquid LQ filled between the projection optical system PL and the predetermined region 100 of the measurement stage ST2 is in a desired state, based on the measurement result of the measurement device 60.

例如,就於投影光學系統PL與可能發生污染物質之構件之間充滿液體LQ,而測量裝置60測量該液體LQ之狀況來考量。又,可能發生污染物質之構件,可舉出未施行上述般表面處理(PFA處理等)之構件(載台上面)、或是被覆著感光材基板P等。在此種情形下,即使依據測量裝置60之測量結果來判斷有無污染液體LQ,要特定出該液體LQ之污染(不佳狀況)原因會有困難。亦即,在此種情況下,液體LQ之污染(不佳狀況)原因被認為至少有下述兩個:液體供應部11之純水製造器161之問題所導致之情況、以及上述構件所發生之污染物質的影響所致之情況。此時,要依據測量裝置60之測量結果來特定出液體LQ之污染(不佳狀況)原因會有困難。若無法特定出液體LQ之污染(不佳狀況)原因,則難以謀求解決該不佳情況之對策或是用以使得液體LQ達成所需狀態(潔淨狀態)之措施。於本實施形態中,由於以不致污染液體LQ的方式所形成之既定區域100上形成液體LQ之液浸區域LR並測量液體LQ,故控制裝置CONT可依據測量裝置60之測量結果來精確地求出液體LQ之真正狀態(水質),當判斷測量之液體LQ受到污染時,可判斷污染的原因乃為例如液體供應部11之純水製造器161的問題所致。是以,可謀求例如對純水製造器161進行維修等讓液體LQ達成所需狀態之適當的措施(對策)。For example, the liquid LQ is filled between the projection optical system PL and a member in which a contaminant may occur, and the measuring device 60 measures the condition of the liquid LQ for consideration. In addition, the member which may be a contaminant may be a member (the upper surface of the stage) which is not subjected to the above-described surface treatment (such as PFA treatment), or the photosensitive material substrate P or the like may be coated. In this case, even if it is judged based on the measurement result of the measuring device 60 whether or not the contaminated liquid LQ is present, it is difficult to specify the cause of the contamination (poor condition) of the liquid LQ. That is, in this case, the cause of the contamination (poor condition) of the liquid LQ is considered to be at least the following two cases: the problem caused by the problem of the pure water maker 161 of the liquid supply portion 11, and the occurrence of the above-mentioned members The situation caused by the impact of pollutants. At this time, it is difficult to specify the cause of contamination (poor condition) of the liquid LQ depending on the measurement result of the measuring device 60. If the cause of the contamination (poor condition) of the liquid LQ cannot be specified, it is difficult to solve the problem of the poor condition or the measure for achieving the desired state (clean state) of the liquid LQ. In the present embodiment, since the liquid immersion area LR of the liquid LQ is formed on the predetermined area 100 formed so as not to contaminate the liquid LQ, and the liquid LQ is measured, the control unit CONT can accurately obtain the measurement result based on the measurement unit 60. When the liquid state LQ of the liquid supply portion 11 is contaminated, it is judged that the cause of the contamination is caused by, for example, the problem of the pure water maker 161 of the liquid supply portion 11. Therefore, it is possible to perform an appropriate measure (measure) for allowing the liquid LQ to reach a desired state, such as maintenance of the pure water generator 161.

又,除了本實施形態般於回收管23之中途設定測量位置,另就例如於供應管13之中途設置用以測量液體LQ之測量位置,測量裝置60以該測量位置來測量液體LQ之水質的情況來考量。藉由以在供應管13之中途所設置之測量位置來測量液體LQ,可避免受到上述般可能會發生污染物質之構件的影響,可測量液體LQ。但是,當在供應管13之中途所設之測量位置與嘴構件70之供應口12之間的既定區間的流路因為何種原因被污染的情況,雖因為流經該既定區間之流路,透過供應口12被供應至光路空間K1之液體LQ有可能受到污染,但由於上述測量位置係設於既定區間之上游側,故測量裝置60並無法測量該液體LQ之污染。結果,即使實際上對光路空間K1供應了受污染之液體LQ,但測量裝置60並無法掌握(測量)對光路空間K1所供應之液體LQ的污染狀況,發生此種不佳的結果。此時,不僅無法謀求用以將液體LQ維持在所需狀態之措施(對策),且要特定曝光精度與測量精度之惡化原因也變得困難。再者,由於會透過受污染之液體LQ來進行依據光測量器300、400、500、600之測量處理、基板P之曝光處理,故透過液體LQ之測量精度與曝光精度會惡化。於本實施形態中,由於測量位置設定在光路空間K1之下游側、具體而言為回收管23之中途,故可防止上述不佳情況的發生。Further, in addition to the present embodiment, the measurement position is set in the middle of the recovery pipe 23, and for example, a measurement position for measuring the liquid LQ is provided in the middle of the supply pipe 13, and the measuring device 60 measures the water quality of the liquid LQ by the measurement position. The situation to consider. By measuring the liquid LQ with the measurement position set in the middle of the supply tube 13, it is possible to avoid the influence of the member which may cause the pollutants as described above, and the liquid LQ can be measured. However, when the flow path of the predetermined section between the measurement position provided in the middle of the supply pipe 13 and the supply port 12 of the nozzle member 70 is contaminated for any reason, although the flow path flows through the predetermined section, The liquid LQ supplied to the optical path space K1 through the supply port 12 may be contaminated, but since the above-described measurement position is provided on the upstream side of the predetermined section, the measurement device 60 cannot measure the contamination of the liquid LQ. As a result, even if the contaminated liquid LQ is actually supplied to the optical path space K1, the measuring device 60 cannot grasp (measure) the contamination state of the liquid LQ supplied to the optical path space K1, and such a poor result occurs. At this time, not only measures (measures) for maintaining the liquid LQ in a desired state, but also the cause of deterioration of the specific exposure accuracy and measurement accuracy are difficult. Further, since the measurement processing by the photometers 300, 400, 500, and 600 and the exposure processing of the substrate P are performed through the contaminated liquid LQ, the measurement accuracy and the exposure accuracy of the permeated liquid LQ are deteriorated. In the present embodiment, since the measurement position is set on the downstream side of the optical path space K1, specifically, in the middle of the recovery tube 23, it is possible to prevent the occurrence of the above-described inconvenience.

又於本實施形態中,由於液體LQ係使用水,故對於既定區域100施以PFA處理,但是當液體LQ為由水以外之其他液體所構成之狀況,也有可能發生異物自既定區域100溶出(混入)液體LQ中等不佳情況。在此種情形下,只要如上述般依據所使用之液體的物性(種類)來對測量載台ST2施行防止液體污染之處理即可。Further, in the present embodiment, since the liquid LQ uses water, the PFA treatment is applied to the predetermined region 100. However, when the liquid LQ is composed of a liquid other than water, foreign matter may be eluted from the predetermined region 100 ( Mixed in) Liquid LQ is moderately poor. In this case, as long as the physical properties (types) of the liquid to be used are used as described above, the measurement stage ST2 may be subjected to a treatment for preventing liquid contamination.

關於以測量裝置60所測量之液體LQ之性質、成分(水質或液質、或是液體之狀態)之項目,乃考慮對於曝光裝置EX之曝光精度以及測量精度所造成之影響、或是對曝光裝置EX本身所造成之影響來決定。表1中乃顯示關於液體LQ之性質、成分之項目,以及該項目對於曝光裝置EX之曝光精度或是對曝光裝置EX本身所造成之影響之一例。如表1所示般,在液體LQ之性質、成分的項目方面,有例如比電阻般之物理性質、金屬離子、全有機物碳(TOC:total organic carbon)、粒子.氣泡、生菌類含有物(異物或污染物)、溶氧(DO:dissolved oxygen)、溶氮(DN:dissolved nitrogen)般溶解氣體等。另一方面,關於對曝光裝置EX之曝光精度或是對曝光裝置EX本身所造成之影響的項目方面,有透鏡(尤其是光學元件LS1)之混濁、水痕(伴隨液體LQ之蒸發,液體中之雜質所固化殘留之附著物)之發生、折射率變化或光散射所致光學性能惡化、對光阻程序(光阻圖案的形成)之影響、各構件之生鏽的發生等。表1中係就何種性質、成分之項目會對於何種性能造成何種程度影響做了歸納,對預測可能會有不良影響者給予「○」。由測量裝置60所測量之液體LQ之性質、成分之項目係依據對曝光裝置EX之曝光精度與測量精度、或是對曝光裝置EX本身所造成之影響而從表1中視情況來選擇。當然,可針對所有項目進行測量,亦可針對關於表1中所未顯示之性質、成分之項目來進行測量。Regarding the nature of the liquid LQ measured by the measuring device 60, the component (water quality or liquid state, or the state of the liquid), the influence of the exposure accuracy and the measurement accuracy of the exposure device EX, or the exposure is considered. It is determined by the influence of the device EX itself. Table 1 shows an example of the nature of the liquid LQ, the composition of the component, and the influence of the item on the exposure accuracy of the exposure apparatus EX or on the exposure apparatus EX itself. As shown in Table 1, in terms of the properties and composition of the liquid LQ, there are physical properties such as specific resistance, metal ions, total organic carbon (TOC), and particles. Bubbles, bacteria-containing substances (foreign matter or contaminants), dissolved oxygen (DO: dissolved oxygen), dissolved nitrogen (DN: dissolved nitrogen) dissolved gases. On the other hand, regarding the item of the exposure accuracy of the exposure apparatus EX or the influence on the exposure apparatus EX itself, there is a turbidity and a water mark of the lens (especially the optical element LS1) (with evaporation of the liquid LQ, in the liquid) The occurrence of adhesion due to curing of impurities, deterioration of optical properties due to refractive index change or light scattering, influence on a photoresist program (formation of a photoresist pattern), occurrence of rust of each member, and the like. Table 1 summarizes the nature of the nature of the project and the impact of the project on what kind of performance, and gives “○” to those who may have adverse effects on the forecast. The nature and composition of the liquid LQ measured by the measuring device 60 are selected from Table 1 depending on the exposure accuracy and measurement accuracy of the exposure device EX or the influence on the exposure device EX itself. Of course, measurements can be made for all items, and can also be measured for items related to the nature and composition not shown in Table 1.

為了對基於上述觀點所選擇之項目進行測量,測量裝置60係具有複數之測量器。例如,測量裝置60可具備用以測量比電阻值之比電阻計、用以測量全有機物碳之TOC計、用以測量含微粒子與氣體之異物的粒子計數器、用以測量溶氧(溶氧濃度)之DO計、用以測量溶氮(溶氮濃度)之DN計、用以測量二氧化矽濃度之二氧化矽計、以及可分析生菌之種類與量之分析器等做為測量器。在本實施形態中做為一例係將全有機物碳、粒子.氣泡、溶氧、比電阻值做為測量項目來選擇,如圖5所示般,測量裝置60係包含用以測量全有機碳之TOC計61、用以測量含微粒子與氣體之異物的粒子計數器62、用以測量溶氧之溶氧計(DO計)63、以及比電阻計64。In order to measure an item selected based on the above viewpoint, the measuring device 60 has a plurality of measuring instruments. For example, the measuring device 60 may be provided with a resistance meter for measuring the specific resistance value, a TOC meter for measuring the total organic carbon, a particle counter for measuring the foreign matter containing the particles and the gas, and measuring the dissolved oxygen (dissolved oxygen concentration). The DO meter, the DN meter for measuring the dissolved nitrogen (nitrification concentration), the cerium oxide meter for measuring the concentration of cerium oxide, and the analyzer for analyzing the type and amount of the bacteria are used as the measuring device. In this embodiment, it is an example of all organic carbon and particles. The bubble, the dissolved oxygen, and the specific resistance value are selected as measurement items. As shown in FIG. 5, the measuring device 60 includes a TOC meter 61 for measuring total organic carbon, and a particle counter for measuring foreign matter containing particles and gas. 62. A dissolved oxygen meter (DO meter) 63 for measuring dissolved oxygen, and a specific resistance meter 64.

如圖5所示般,自與回收口22連接之回收管(回收流路)23之中途分支而出之分支管(分支流路)61K上係連接著TOC計61。回收管23有液體LQ透過回收口22而流經其中。流經回收管23之液體LQ係於投影光學系統PL與測量載台ST2之既定區域100之間充滿之液體。流經回收管23之液體LQ當中的一部分液體LQ回收至液體回收部21,其餘部分則流經分支管61K而流入TOC計61。TOC計61係對於流透過分支管61K所形成之分支流路的液體LQ中之全有機物碳(TOC)進行測量。同樣地,粒子計數器62、溶氧計63、以及比電阻計64係分別與自回收管23之中途所分支之分支管62K、63K、64K連接,對於流透過分支管62K、63K、64K所形成之分支流路的液體LQ中之異物(微粒子或氣泡)、溶氧、比電阻值進行測量。又,上述二氧化矽計、生菌分析器亦可與自回收管23中途所分支之分支管連接。As shown in FIG. 5, the TOC meter 61 is connected to the branch pipe (branch flow path) 61K branched from the recovery pipe (recovery flow path) 23 connected to the recovery port 22. The recovery pipe 23 has a liquid LQ flowing through the recovery port 22 and flowing therethrough. The liquid LQ flowing through the recovery pipe 23 is a liquid filled between the projection optical system PL and the predetermined region 100 of the measurement stage ST2. A part of the liquid LQ flowing through the liquid LQ of the recovery pipe 23 is recovered to the liquid recovery part 21, and the remaining part flows through the branch pipe 61K and flows into the TOC meter 61. The TOC meter 61 measures total organic carbon (TOC) in the liquid LQ of the branch flow path formed by the flow through the branch pipe 61K. Similarly, the particle counter 62, the dissolved oxygen meter 63, and the specific resistance meter 64 are connected to the branch pipes 62K, 63K, and 64K branched from the middle of the recovery pipe 23, and are formed by the flow-through branch pipes 62K, 63K, and 64K. The foreign matter (fine particles or bubbles), dissolved oxygen, and specific resistance value in the liquid LQ of the branch flow path were measured. Further, the above-mentioned cerium oxide meter and the bacteria analyzer may be connected to a branch pipe branched from the middle of the recovery pipe 23.

又,如上述般測量裝置60之測量項目可視情況來選擇,故測量裝置60可具備測量器61~64當中一者或是複數者。Further, since the measurement items of the measuring device 60 are selected as described above, the measuring device 60 may be provided with one or a plurality of the measuring devices 61 to 64.

於本實施形態中,分支管61K~64K係形成個別獨立之分支流路,於個別獨立之分支流路分別連接著各測量器61~64。亦即,複數之測量器61~64係對於回收管23透過分支管61K~64K並聯連接著。又,隨測量器之構成,亦可對回收管23使得複數測量器串聯連接,換言之亦可對自回收管23分支之液體LQ以第1測量器來測量,然後通過該第1測量器之液體LQ以第2測量器來測量。又,隨分支管(分支部)之數量與位置,發生異物(微粒子)之可能性會變高,故考慮異物發生之可能性來設定分支管之數量與位置為佳。In the present embodiment, the branch pipes 61K to 64K form separate branch flow paths, and the respective measuring devices 61 to 64 are connected to the respective independent branch flow paths. That is, the plurality of measuring devices 61 to 64 are connected in parallel to the recovery pipe 23 through the branch pipes 61K to 64K. Further, with the configuration of the measuring device, the plurality of measuring devices may be connected in series to the recovery pipe 23, in other words, the liquid LQ branched from the recovery pipe 23 may be measured by the first measuring device, and then passed through the liquid of the first measuring device. The LQ is measured with a second measurer. Further, since the possibility of occurrence of foreign matter (fine particles) increases with the number and position of the branch pipes (branch portions), it is preferable to set the number and position of the branch pipes in consideration of the possibility of occurrence of foreign matter.

又,亦可設定取樣口,來於回收管23之中途對液體LQ之一部分做取樣。例如,為了特定液體LQ中所含金屬離子之種類,可對液體LQ進行取樣,使用與曝光裝置EX分開設置之分析裝置,對該金屬離子之種類加以特定。藉此,可依據所特定之金屬離子採行適當的措施。又,為了對液體LQ中所含雜質進行測量,可對液體LQ取樣,藉由與曝光裝置EX分開設置之全蒸發殘渣計來測量液體LQ中之全蒸發殘渣量。Further, a sampling port may be provided to sample a portion of the liquid LQ in the middle of the recovery pipe 23. For example, in order to specify the kind of metal ions contained in the liquid LQ, the liquid LQ may be sampled, and the type of the metal ions may be specified using an analysis device provided separately from the exposure device EX. Thereby, appropriate measures can be taken depending on the specific metal ions. Further, in order to measure the impurities contained in the liquid LQ, the liquid LQ may be sampled, and the amount of pervaporation residue in the liquid LQ is measured by a pervaporation residue meter provided separately from the exposure device EX.

於本實施形態中,測量裝置60係對於自回收管23所形成之回收流路中途所分支之分支流路中流動之液體LQ的水質進行測量。藉此,由於測量裝置60被經時供應液體LQ,故控制裝置CONT可藉由進行與液浸曝光時同樣的動作、亦即進行透過供應口12之液體供應動作與透過回收口22之液體回收動作,無須實行特別的動作,便可良好地測量液體LQ之水質。In the present embodiment, the measuring device 60 measures the water quality of the liquid LQ flowing through the branch flow path branched in the middle of the recovery flow path formed by the recovery pipe 23. Thereby, since the measuring device 60 supplies the liquid LQ over time, the control device CONT can perform the same operation as in the immersion exposure, that is, the liquid supply operation through the supply port 12 and the liquid recovery through the recovery port 22. The water quality of the liquid LQ can be measured well without special movements.

其次,針對使用具有上述構成之曝光裝置EX將光罩M之圖案像曝光於基板P之方法,參照圖6之流程圖來說明。於本實施形態中,係使得複數基板P依序曝光。更具體而言,複數基板P係被批量管理,曝光裝置EX針對複數批量分別進行依序處理。Next, a method of exposing the pattern image of the mask M to the substrate P using the exposure apparatus EX having the above configuration will be described with reference to a flowchart of FIG. 6. In the present embodiment, the plurality of substrates P are sequentially exposed. More specifically, the plurality of substrates P are managed in batches, and the exposure apparatus EX performs sequential processing for each of the plurality of batches.

控制裝置CONT係使用基板載台驅動裝置SD1將基板載台ST1移動至既定之基板更換位置。在基板更換位置,進行著下述動作:由未圖示之搬送系統將曝光後之基板P自基板載台ST1搬出(卸載),且將曝光前之基板P搬入(負載)。又,當基板載台ST1上沒有曝光前之基板P的情況,當然不進行基板P之搬出,僅進行曝光前之基板P的搬入。又,也有在基板更換位置僅進行曝光後之基板P的搬出而不進行曝光前之基板P的搬入的情況。於以下之說明中,將進行曝光前之基板P對基板載台ST1的搬入以及曝光後之基板P對基板載台ST1的搬出中至少一者的動作權宜地稱為「基板更換動作」。The control device CONT moves the substrate stage ST1 to a predetermined substrate replacement position by using the substrate stage drive device SD1. At the substrate replacement position, the substrate P after the exposure is carried out (unloaded) from the substrate stage ST1 by a transfer system (not shown), and the substrate P before the exposure is carried (loaded). Further, when the substrate P before the exposure is not present on the substrate stage ST1, of course, the substrate P is not carried out, and only the substrate P before the exposure is carried in. Further, there is a case where the substrate P after the exposure is performed only at the substrate replacement position, and the substrate P before the exposure is not carried. In the following description, the operation of at least one of the substrate P before the exposure to the substrate stage ST1 and the substrate P after the exposure to the substrate stage ST1 are expediently referred to as "substrate replacement operation".

於本實施形態中,在進行對基板載台ST1之基板更換動作的過程中,使用測量載台ST2來進行測量處理。控制裝置CONT係與對基板載台ST1之基板更換動作之至少一部分並行,使用測量載台ST2來開始既定之測量處理(步驟SA1)。In the present embodiment, during the substrate replacement operation on the substrate stage ST1, the measurement process is performed using the measurement stage ST2. The control device CONT starts a predetermined measurement process using the measurement stage ST2 in parallel with at least a part of the substrate replacement operation of the substrate stage ST1 (step SA1).

控制裝置CONT在投影光學系統PL之下面LSA與測量載台ST2之上面97的既定區域100對向之狀態下、亦即將既定區域100配置於用以使基板P曝光所設置之位置處,使用液浸機構1進行液體LQ之供應與回收,於投影光學系統PL與測量載台ST2之既定區域100之間充滿液體LQ。然後,控制裝置CONT使用測量裝置60來對於在投影光學系統PL與測量載台ST2之既定區域100之間的液體LQ之水質進行測量。如上述般,測量裝置60係對污染受到抑制之液體LQ進行測量。測量裝置60之測量結果係輸出至控制裝置CONT。控制裝置CONT係將測量裝置60之測量結果儲存於記憶裝置MRY(步驟SA2)。The control device CONT is disposed in a state where the lower surface LSA of the projection optical system PL is opposed to the predetermined region 100 of the upper surface 97 of the measurement stage ST2, that is, the predetermined region 100 is disposed at a position where the substrate P is exposed. The immersion mechanism 1 supplies and recovers the liquid LQ, and is filled with the liquid LQ between the projection optical system PL and the predetermined region 100 of the measurement stage ST2. Then, the control device CONT uses the measuring device 60 to measure the water quality of the liquid LQ between the projection optical system PL and the predetermined region 100 of the measurement stage ST2. As described above, the measuring device 60 measures the liquid LQ whose pollution is suppressed. The measurement result of the measuring device 60 is output to the control device CONT. The control device CONT stores the measurement result of the measuring device 60 in the memory device MRY (step SA2).

於本實施形態中,控制裝置CONT係對應於時間經過將測量裝置60對於既定區域100上所配置之液體LQ的測量結果儲存於記憶裝置MRY。例如,設置可感知供應管13之流路是否以閥13B所封閉之閥用感測器,並於控制裝置CONT設置計時器功能,藉此,控制裝置CONT可依據閥用感測器之感測結果,測量自感知閥13B將供應管13之流路開通起之經過時間,亦即測量液體供應機構10開始供應液體LQ之經過時間。藉此,控制裝置CONT能以液體供應機構10對投影光學系統PL像面側開始供應液體LQ之時間做為測量開始時點(基準),對應於時間經過將測量裝置60之測量結果儲存於記憶裝置MRY。又,控制裝置CONT亦能以感知閥13B將供應管13之流路封閉之時刻、亦即液體供應機構10停止對投影光學系統PL像面側供應液體LQ之時刻做為測量開始時點(基準)。於以下之說明中,將對應於時間經過所記錄之資訊(此處為關於在投影光學系統PL與既定區域100之間所充滿之液體LQ之水質以測量裝置60所測量之結果)權宜地稱為「第1日誌資訊」。In the present embodiment, the control device CONT stores the measurement result of the liquid LQ disposed on the predetermined region 100 by the measuring device 60 in the memory device MRY in response to the passage of time. For example, a valve sensor that senses whether the flow path of the supply pipe 13 is closed by the valve 13B is provided, and a timer function is set in the control device CONT, whereby the control device CONT can be sensed according to the sensor for the valve As a result, the elapsed time from the opening of the flow path of the supply pipe 13 by the sensing valve 13B, that is, the elapsed time at which the liquid supply mechanism 10 starts supplying the liquid LQ is measured. Thereby, the control device CONT can use the liquid supply mechanism 10 to start the supply of the liquid LQ on the image plane side of the projection optical system PL as the measurement start time point (reference), and store the measurement result of the measurement device 60 in the memory device in response to the passage of time. MRY. Further, the control device CONT can also use the sensing valve 13B to close the flow path of the supply pipe 13, that is, the timing at which the liquid supply mechanism 10 stops supplying the liquid LQ to the image side of the projection optical system PL as the measurement start point (reference). . In the following description, the information corresponding to the time lapse (here, the result of measuring the water quality of the liquid LQ filled between the projection optical system PL and the predetermined area 100 by the measuring device 60) is expediently called It is "1st log information".

又,於本實施形態中對複數基板P依序曝光之後,在對基板載台ST1進行基板更換動作之過程中,於測量載台ST2上之既定區域100形成液體LQ之液浸區域LR,進行測量裝置60對液體LQ之測量動作。測量裝置60對液體LQ之測量處理係於每次對基板載台ST1更換基板P的時候、或是每當對既定片數之基板P做曝光處理之後、或是對每批量之基板P來實行。控制裝置CONT在對複數基板P依序曝光之時,對應於基板P將測量裝置60之測量結果儲存於記憶裝置MRY。於以下之說明中,將對應於基板P所記錄之資訊(此處為關於在投影光學系統PL與測量載台ST2之既定區域100之間所充滿之液體LQ之水質以測量裝置60所測量之結果)權宜地稱為「第2日誌資訊」。Further, in the present embodiment, after the substrate substrate S is sequentially exposed to the substrate stage ST1, the liquid immersion area LR of the liquid LQ is formed in the predetermined area 100 on the measurement stage ST2. The measuring device 60 measures the liquid LQ. The measuring process of the liquid LQ by the measuring device 60 is performed every time the substrate P is replaced with the substrate stage ST1, or after a predetermined number of substrates P are exposed, or for each batch of the substrate P. . The control device CONT stores the measurement result of the measuring device 60 in the memory device MRY corresponding to the substrate P while sequentially exposing the plurality of substrates P. In the following description, the information recorded corresponding to the substrate P (here, the water quality of the liquid LQ filled between the projection optical system PL and the predetermined area 100 of the measurement stage ST2 is measured by the measuring device 60. The result) is expediently referred to as "second log information".

又,控制裝置CONT可將測量裝置60之測量結果以包含顯示裝置之告知裝置INF來顯示(告知)。Further, the control unit CONT can display (notify) the measurement result of the measuring device 60 as the notification device INF including the display device.

控制裝置CONT判斷測量裝置60之測量結果是否異常(步驟SA3)。控制裝置CONT係依據前述判斷結果來控制曝光裝置EX之動作。The control unit CONT judges whether or not the measurement result of the measuring device 60 is abnormal (step SA3). The control device CONT controls the operation of the exposure device EX in accordance with the above-described determination result.

所謂測量裝置60之測量結果出現異常,包含下述情況:液體LQ之狀態(水質)並非所需狀態而為異常,以測量裝置60所測量之各項目(TOC、異物、溶解氣體濃度、二氧化矽濃度、生菌、比電阻值等)之測量值成為預先設定之容許值以上,透過液體LQ之曝光處理與測量處理未能在所需狀態下進行。The measurement result of the measuring device 60 is abnormal, and includes the following cases: the state (water quality) of the liquid LQ is not the desired state and is abnormal, and each item measured by the measuring device 60 (TOC, foreign matter, dissolved gas concentration, dioxide) The measured value of the cerium concentration, the bacteria, the specific resistance value, and the like is set to a predetermined allowable value or more, and the exposure processing and the measurement processing of the permeated liquid LQ are not performed in a desired state.

此處,於以下說明中,將關於在投影光學系統PL與既定區域100之間所充滿之液體LQ水質的容許值權宜地稱為「第1容許值」。第1容許值意味著大致未受到於投影光學系統PL像面側所配置之物體(此處為既定區域100)影響之液體LQ水質的容許值。Here, in the following description, the allowable value of the liquid LQ water quality filled between the projection optical system PL and the predetermined region 100 is expediently referred to as a "first allowable value". The first allowable value means an allowable value of the liquid LQ water quality which is not substantially affected by the object (here, the predetermined area 100) disposed on the image plane side of the projection optical system PL.

第1容許值可藉由例如事先之實驗或是模擬等來求出。只要關於液體LQ水質之測量值為第1容許值以下,即可在所需狀態下透過液體LQ進行曝光處理與測量處理。The first allowable value can be obtained by, for example, a prior experiment or simulation. As long as the measured value of the liquid LQ water quality is equal to or less than the first allowable value, exposure processing and measurement processing can be performed through the liquid LQ in a desired state.

例如,當液體LQ中之全有機物碳之值較第1容許值(舉例來說1.0ppb)來得大之情況(異常情況),液體LQ之穿透率有可能降低。此時,光測量器300、400、500、600透過液體LQ之測量精度會惡化。或者,基板P透過液體LQ之曝光精度會惡化。For example, when the value of the total organic carbon in the liquid LQ is larger than the first allowable value (for example, 1.0 ppb) (abnormality), the transmittance of the liquid LQ may be lowered. At this time, the measurement accuracy of the light measuring device 300, 400, 500, 600 through the liquid LQ is deteriorated. Alternatively, the exposure accuracy of the substrate P through the liquid LQ may be deteriorated.

又,當液體LQ中之包含微粒子或氣泡之異物量較第1容許值來得多之情況(異常情況),光測量器300、400、500、600透過液體LQ之測量精度會惡化,或者,透過液體LQ轉印至基板P之圖案產生缺陷之可能性會變高。Further, when the amount of foreign matter containing fine particles or bubbles in the liquid LQ is much larger than the first allowable value (abnormality), the measurement accuracy of the light measuring device 300, 400, 500, 600 through the liquid LQ may be deteriorated, or The possibility that the pattern of the liquid LQ transferred to the substrate P causes a defect becomes high.

又,當液體LQ中之包含溶氧與溶氮之溶解氣體(溶解氣體濃度)之值較第1容許值來得多之情況(異常情況),例如透過供應口12對基板P上所供應之液體LQ開放於大氣之情形下,受到液體LQ中溶解氣體之影響,於液體LQ中生成氣泡之可能性會變高。一旦於液體LQ中生成氣泡,與上述同樣,光測量器300、400、500、600之測量精度會惡化,或者,轉印至基板P之圖案產生缺陷之可能性會變高。Further, when the value of the dissolved gas (dissolved gas concentration) containing dissolved oxygen and dissolved nitrogen in the liquid LQ is much larger than the first allowable value (abnormality), for example, the liquid supplied to the substrate P through the supply port 12 When LQ is opened to the atmosphere, it is likely to be generated by the dissolved gas in the liquid LQ, and bubbles are generated in the liquid LQ. When bubbles are generated in the liquid LQ, the measurement accuracy of the photometers 300, 400, 500, and 600 is deteriorated as described above, or the possibility that the pattern transferred to the substrate P is defective is increased.

又,當生菌量多的情況(異常情況),液體LQ受污染使得穿透率惡化。再者,當生菌量多的情況,會產生與液體LQ接觸之構件(嘴構件70、光學元件LS1、測量載台ST2、基板載台ST1、供應管13、回收管23等)受到污染、污染擴大之不佳情形。Further, when the amount of the bacteria is large (abnormality), the liquid LQ is contaminated and the penetration rate is deteriorated. Further, when the amount of the bacteria is large, the member that is in contact with the liquid LQ (the nozzle member 70, the optical element LS1, the measurement stage ST2, the substrate stage ST1, the supply tube 13, the recovery tube 23, etc.) is contaminated, Poor pollution expansion.

又,當液體LQ之比電阻值較第1容許值(舉例來說於25℃為18.2MΩ.cm)小的情況(異常情況),液體LQ中有可能含大量鈉離子等金屬離子。若以含大量金屬離子之液體LQ在基板P上形成液浸區域LR,液體LQ之金屬離子可能會浸透基板P上之感光材,而附著於在該感光材下已經形成之元件圖案(配線圖案),引起元件運作不良等不佳情形。Further, when the specific resistance value of the liquid LQ is smaller than the first allowable value (for example, 18.2 MΩ·cm at 25 ° C) (abnormality), the liquid LQ may contain a large amount of metal ions such as sodium ions. If the liquid immersion area LR is formed on the substrate P by the liquid LQ containing a large amount of metal ions, the metal ions of the liquid LQ may impregnate the photosensitive material on the substrate P, and adhere to the element pattern (wiring pattern) which has been formed under the photosensitive material. ), causing poor operation of components, etc.

控制裝置CONT係依據關於液體LQ水質事先設定之第1容許值與測量裝置60之測量結果,控制曝光裝置EX之動作。The control device CONT controls the operation of the exposure device EX based on the first allowable value set in advance for the liquid LQ water quality and the measurement result of the measuring device 60.

於步驟SA3中,當判斷測量裝置60之測量結果無異常、亦即液體LQ之水質無異常的情況下,控制裝置CONT會使用液浸機構1在投影光學系統PL之第1光學元件LS1與測量載台ST2之上面97之間充滿液體LQ,使用光測量器300、400、500、600中至少一者進行測量動作(步驟SA4)。於投影光學系統PL與光測量器300、400、500、600之上面301、401、501、601之間所充滿之液體LQ,在步驟SA3中,被判斷(確認)為水質無異常、處於所需狀態之液體LQ。是以,可透過此所需狀態之液體LQ良好地以光測量器進行測量處理。In step SA3, when it is judged that the measurement result of the measuring device 60 is not abnormal, that is, the water quality of the liquid LQ is not abnormal, the control device CONT uses the liquid immersion mechanism 1 in the first optical element LS1 of the projection optical system PL and the measurement. The upper surface 97 of the stage ST2 is filled with the liquid LQ, and at least one of the light measuring devices 300, 400, 500, and 600 is used for the measurement operation (step SA4). The liquid LQ filled between the projection optical system PL and the upper surfaces 301, 401, 501, and 601 of the optical measuring instruments 300, 400, 500, and 600 is judged (confirmed) in step SA3 as having no abnormality in water quality. Liquid LQ in the required state. Therefore, the liquid LQ that can pass through the desired state is well measured by the light measuring device.

光測量器所進行之測量動作,可舉出基線測量做為一例。具體而言,控制裝置CONT係使用上述光罩對準系統來同時對在測量載台ST2上所設之基準構件300上第1基準標記MFM以及對應之光罩M上之光罩對準標記進行檢測,檢測出第1基準標記MFM以及對應之光罩對準標記之位置關係。與此同時,或是在此前後,控制裝置CONT以基板對準系統來對基準構件300上之第2基準標記PFM進行檢測,而檢測出基板對準系統之檢測基準位置與第2基準標記PFM之位置關係。又如上述般,當測量第1基準標記MFM之時,於第1基準標記MFM上形成液浸區域LR,透過液體LQ實行測量處理。另一方面,當測量第2基準標記PFM之時,於第2基準標記PFM上不形成液浸區域LR,不透過液體LQ即實行測量處理。此外,控制裝置CONT係依據第1基準標記MFM與對應之光罩對準標記之位置關係、基板對準系統之檢測基準位置與第2基準標記PFM之位置關係、以及已知之第1基準標記MFM與第2基準標記PFM之位置關係,求出投影光學系統PL所致光罩M之圖案投影位置與基板對準系統之檢測基準位置的距離(亦即基板對準系統之基線資訊)。The measurement operation performed by the light measuring device can be exemplified by the baseline measurement. Specifically, the control device CONT uses the reticle alignment system to simultaneously perform the first reference mark MFM on the reference member 300 provided on the measurement stage ST2 and the reticle alignment mark on the corresponding reticle M. The positional relationship between the first reference mark MFM and the corresponding mask alignment mark is detected. At the same time, or before and after this, the control unit CONT detects the second reference mark PFM on the reference member 300 by the substrate alignment system, and detects the detection reference position of the substrate alignment system and the second reference mark PFM. The positional relationship. Further, as described above, when the first reference mark MFM is measured, the liquid immersion area LR is formed on the first reference mark MFM, and the measurement process is performed by the liquid LQ. On the other hand, when the second reference mark PFM is measured, the liquid immersion area LR is not formed on the second reference mark PFM, and the measurement process is performed without passing through the liquid LQ. Further, the control device CONT is based on the positional relationship between the first reference mark MFM and the corresponding mask alignment mark, the positional relationship between the detection reference position of the substrate alignment system and the second reference mark PFM, and the known first reference mark MFM. Based on the positional relationship with the second reference mark PFM, the distance between the pattern projection position of the mask M caused by the projection optical system PL and the detection reference position of the substrate alignment system (that is, the baseline information of the substrate alignment system) is obtained.

又,光測量器所進行之測量動作並不侷限於上述基線測量,亦可使用在測量載台ST2所搭載之光測量器400、500、600來實行照度不均測量、空間像測量、照度測量等當中至少一者。控制裝置CONT係依據該等光測量器400、500、600之測量結果來進行例如投影光學系統PL之校正處理等各種修正處理,此會反映於之後所進行之基板P的曝光處理上。當使用光測量器400、500、600來進行測量處理的情況,控制裝置CONT會於投影光學系統PL之第1光學元件LS1與測量載台ST2之上面97之間充滿液體LQ,透過液體LQ來進行測量處理。Further, the measurement operation performed by the optical measuring device is not limited to the above-described baseline measurement, and the illuminance unevenness measurement, the spatial image measurement, and the illuminance measurement may be performed using the optical meters 400, 500, and 600 mounted on the measurement stage ST2. At least one of them. The control device CONT performs various correction processes such as correction processing of the projection optical system PL based on the measurement results of the optical measuring devices 400, 500, and 600, and this is reflected in the exposure processing of the substrate P to be performed later. When the light measuring devices 400, 500, and 600 are used for the measurement processing, the control device CONT is filled with the liquid LQ between the first optical element LS1 of the projection optical system PL and the upper surface 97 of the measurement stage ST2, and is transmitted through the liquid LQ. Perform measurement processing.

另一方面,於步驟SA3中,當判斷測量裝置60之測量結果異常、亦即液體LQ之水質異常的情況,控制裝置CONT乃不實行以光測量器所進行之測量動作,而將測量裝置60之測量結果對告知裝置INF加以告知(步驟SA14)。例如控制裝置CONT可將關於液體LQ中所含TOC、溶解氣體濃度隨時間經過之變動量的資訊以具備顯示裝置之告知裝置INF來顯示。又,當判斷測量裝置60之測量結果為異常的情況,控制裝置CONT能以告知裝置INF發出警報(警告)等來以告知裝置INF告知測量結果為異常之事。又,當判斷測量裝置60之測量結果為異常的情況,控制裝置CONT亦可停止以液體供應機構10來供應液體LQ。亦可將在測量載台ST2上所殘留之液體LQ以包含嘴構件70之液體回收機構20來回收。On the other hand, in step SA3, when it is judged that the measurement result of the measuring device 60 is abnormal, that is, the water quality of the liquid LQ is abnormal, the control device CONT does not perform the measurement operation by the light measuring device, but the measuring device 60 The measurement result informs the notification device INF (step SA14). For example, the control device CONT can display the information on the amount of change in the concentration of the TOC and the dissolved gas contained in the liquid LQ over time in the notification device INF including the display device. Further, when it is judged that the measurement result of the measuring device 60 is abnormal, the control device CONT can issue an alarm (warning) or the like to the notification device INF to inform the device INF that the measurement result is abnormal. Further, when it is judged that the measurement result of the measuring device 60 is abnormal, the control device CONT may also stop supplying the liquid LQ with the liquid supply mechanism 10. The liquid LQ remaining on the measurement stage ST2 can also be recovered by the liquid recovery mechanism 20 including the nozzle member 70.

又,如上述般,液體供應部11分別具有液體改質構件與液體改質裝置,具備用以調整液體LQ水質之複數調整裝置(純水製造器161、超純水製造器162、脫氣裝置173、過濾器174等)。控制裝置CONT可依據測量裝置60之測量結果,特定複數調整裝置當中至少一調整裝置,將關於該特定之調整裝置之資訊以告知裝置INF來告知。例如,依據測量裝置60當中DO計或DN計之測量結果,當判斷溶解氣體濃度為異常之情況,控制裝置CONT乃以告知裝置INF來顯示(告知)促使複數調整裝置當中之例如脫氣裝置173之脫氣過濾器或脫氣泵之維修(檢查、更換)之內容。Further, as described above, the liquid supply unit 11 includes a liquid reforming member and a liquid reforming device, and includes a plurality of adjusting devices for adjusting the water quality of the liquid LQ (pure water generator 161, ultrapure water maker 162, deaerator) 173, filter 174, etc.). The control device CONT can inform at least one of the plurality of adjustment devices according to the measurement result of the measurement device 60, and inform the device INF of the information about the specific adjustment device. For example, depending on the measurement result of the DO meter or the DN meter in the measuring device 60, when it is judged that the dissolved gas concentration is abnormal, the control device CONT displays (informs) the inducing device INF to cause, for example, the degasser 173 among the plurality of adjusting devices. The contents of maintenance (inspection, replacement) of the degassing filter or degassing pump.

又,當依據測量裝置60中之比電阻計的測量結果來判斷有無液體LQ之比電阻值異常的情況,控制裝置CONT乃以告知裝置INF來顯示(告知)促使複數調整裝置當中之例如純水製造裝置之離子交換膜之維修(檢查、更換)之內容。又,當依據測量裝置60中之比電阻計的測量結果,判斷出現了液體LQ之比電阻值異常的情況,控制裝置CONT乃以告知裝置INF來顯示(告知)促使複數調整裝置當中之例如純水製造裝置16之離子交換膜之維修(檢查、更換)之內容。又,當依據測量裝置60當中TOC計的測量結果,判斷液體LQ之全有機物碳出現異常的情況,控制裝置CONT乃以告知裝置INF來顯示(告知)促使複數調整裝置當中之例如純水製造裝置16之UV燈之維修(檢查、更換)之內容。又,當依據測量裝置60當中粒子計數器的測量結果,判斷液體LQ之異物(微粒子、氣泡)之量出現異常的情況,控制裝置CONT乃以告知裝置INF來顯示(告知)促使複數調整裝置當中之例如過濾器174或是純水製造裝置16之粒子過濾器之維修(檢查、更換)之內容。又,當依據測量裝置60當中生菌分析器的分析結果,判斷液體LQ之生菌量出現異常的情況,控制裝置CONT乃以告知裝置INF來顯示(告知)促使複數調整裝置當中之例如純水製造裝置16之UV燈之維修(檢查、更換)之內容。又,當依據測量裝置60當中二氧化矽計的測量結果,判斷液體LQ之二氧化矽濃度出現異常的情況,控制裝置CONT乃以告知裝置INF來顯示(告知)促使複數調整裝置當中之例如純水製造裝置16之二氧化矽去除用過濾器之維修(檢查、更換)之內容。Further, when it is judged based on the measurement result of the specific resistance meter in the measuring device 60 whether or not the specific resistance value of the liquid LQ is abnormal, the control device CONT displays (informs) the instructing device INF to cause, for example, pure water among the plurality of adjusting devices. The maintenance (inspection, replacement) of the ion exchange membrane of the manufacturing equipment. Further, when it is judged that the specific resistance value of the liquid LQ is abnormal according to the measurement result of the specific resistance meter in the measuring device 60, the control device CONT displays (informs) the notification device INF to cause, for example, pure among the plurality of adjustment devices. The contents of maintenance (inspection, replacement) of the ion exchange membrane of the water producing device 16. Further, when it is determined that the total organic matter of the liquid LQ is abnormal according to the measurement result of the TOC meter in the measuring device 60, the control device CONT displays (informs) the inducing device INF to cause, for example, a pure water producing device among the plurality of adjusting devices. 16 UV lamp repair (inspection, replacement) content. Further, when it is determined that the amount of foreign matter (fine particles, bubbles) of the liquid LQ is abnormal according to the measurement result of the particle counter in the measuring device 60, the control device CONT displays (informs) the inducing device INF to cause the plurality of adjusting devices. For example, the filter 174 or the maintenance (inspection, replacement) of the particle filter of the pure water producing device 16 is included. Further, when it is judged that the amount of bacteria of the liquid LQ is abnormal according to the analysis result of the bacteria analyzer in the measuring device 60, the control device CONT displays (informs) the inducing device INF to cause, for example, pure water among the plurality of adjusting devices. The contents of maintenance (inspection, replacement) of the UV lamp of the manufacturing device 16. Further, when it is judged that the concentration of cerium oxide of the liquid LQ is abnormal according to the measurement result of the cerium oxide in the measuring device 60, the control device CONT displays (information) by the notification device INF to cause, for example, pure in the plurality of adjusting devices. The contents of maintenance (inspection, replacement) of the filter for removing cerium oxide in the water-making device 16.

然後,依據告知裝置INF之告知資訊,進行包含上述維修處理等之用以將液體LQ之水質維持在所需狀態之措施(步驟SA15)。於該措施施行之後,控制裝置CONT再度使用測量裝置60來實行液體LQ之水質的測量動作(步驟SA2)。使得液體LQ之水質維持在所需狀態之措施將持續進行至測量裝置60之測量結果被判斷為無異常為止。Then, based on the notification information of the notification device INF, a measure for maintaining the water quality of the liquid LQ in a desired state including the above-described maintenance processing or the like is performed (step SA15). After the measure is executed, the control unit CONT again uses the measuring device 60 to perform the water quality measuring operation of the liquid LQ (step SA2). The measure for maintaining the water quality of the liquid LQ in the desired state will continue until the measurement result of the measuring device 60 is judged to be abnormal.

當使用步驟SA4之光測量器300、400、500、600當中至少一者之測量動作完成,使用測量載台ST2之測量動作乃結束(步驟SA5)。其次,控制裝置CONT乃下達開始進行基板P之液浸曝光處理之指令(步驟SA6)。When the measurement operation using at least one of the light measuring devices 300, 400, 500, and 600 of step SA4 is completed, the measurement operation using the measurement stage ST2 is ended (step SA5). Next, the control unit CONT issues a command to start the liquid immersion exposure processing of the substrate P (step SA6).

此時,於基板更換位置已事先完成基板更換動作,於基板載台ST1保持著曝光前之基板P。控制裝置CONT係例如使得測量載台ST2與基板載台ST1接觸(接近),維持於該相對位置關係之狀態下,在XY平面內移動,對於曝光前之基板P進行對準處理。此處,於基板P上事先設有複數之曝光照射區域,並設置有與該複數之曝光照射區域分別對應之對準標記。控制裝置CONT利用基板對準系統進行曝光前基板P上之對準標記之檢測,計算出於基板P上所設複數之曝光照射區域分別相對於基板對準系統之檢測基準位置的位置座標。At this time, the substrate replacement operation is completed in advance at the substrate replacement position, and the substrate P before exposure is held on the substrate stage ST1. The control device CONT is, for example, such that the measurement stage ST2 is brought into contact with (close to) the substrate stage ST1, and is moved in the XY plane while maintaining the relative positional relationship, and the substrate P before the exposure is aligned. Here, a plurality of exposure irradiation regions are provided in advance on the substrate P, and alignment marks corresponding to the plurality of exposure irradiation regions are provided. The control unit CONT performs the detection of the alignment marks on the pre-exposure substrate P by the substrate alignment system, and calculates the position coordinates of the plurality of exposure irradiation areas on the substrate P with respect to the detection reference position of the substrate alignment system.

控制裝置CONT一邊維持著基板載台ST1與測量載台ST2在Y軸方向之相對位置關係,一邊使用載台驅動裝置SD1、SD2使得基板載台ST1與測量載台ST2同時朝-Y方向移動。如參照圖3所說明般,控制裝置CONT係在基板載台ST1與測量載台ST2接觸(或接近)之狀態下,於包含投影光學系統PL正下方位置之區域內一起朝-Y方向移動。控制裝置CONT藉由使得基板載台ST1與測量載台ST2一起移動,將在投影光學系統PL之第1光學元件LS1與測量載台ST2之上面97之間所保持之液體LQ從測量載台ST2之上面97移動至基板載台ST1之上面95。於投影光學系統PL之第1光學元件LS1與測量載台ST2之間所充滿之液體LQ的液浸區域LR係伴隨測量載台ST2與基板載台ST1朝-Y方向移動,而依序沿測量載台ST2之上面97、基板載台ST1之上面95、基板P之上面移動。一旦基板載台ST1以及測量載台ST2一起朝-Y方向移動既定距離,會成為在投影光學系統PL之第1光學元件LS1與基板P之間充滿液體LQ之狀態。亦即,液體LQ之液浸區域LR係配置於基板載台ST1之基板P上。將基板載台ST1(基板P)移動至投影光學系統PL之下方之後,控制裝置CONT乃將測量載台ST2退至不致與基板載台ST1發生衝突之既定位置。The control device CONT maintains the relative positional relationship between the substrate stage ST1 and the measurement stage ST2 in the Y-axis direction, and simultaneously moves the substrate stage ST1 and the measurement stage ST2 in the -Y direction using the stage driving devices SD1 and SD2. As described with reference to FIG. 3, the control device CONT moves in the -Y direction together in a region including the position immediately below the projection optical system PL in a state where the substrate stage ST1 is in contact with (or close to) the measurement stage ST2. The control device CONT moves the liquid carrier LQ held between the first optical element LS1 of the projection optical system PL and the upper surface 97 of the measurement stage ST2 from the measurement stage ST2 by moving the substrate stage ST1 together with the measurement stage ST2. The upper surface 97 moves to the upper surface 95 of the substrate stage ST1. The liquid immersion area LR of the liquid LQ filled between the first optical element LS1 of the projection optical system PL and the measurement stage ST2 is moved in the -Y direction along with the measurement stage ST2 and the substrate stage ST1, and is sequentially measured. The upper surface 97 of the stage ST2, the upper surface 95 of the substrate stage ST1, and the upper surface of the substrate P move. When the substrate stage ST1 and the measurement stage ST2 are moved together in the -Y direction by a predetermined distance, the liquid LQ is filled between the first optical element LS1 of the projection optical system PL and the substrate P. That is, the liquid immersion area LR of the liquid LQ is disposed on the substrate P of the substrate stage ST1. After the substrate stage ST1 (substrate P) is moved below the projection optical system PL, the control unit CONT retracts the measurement stage ST2 to a predetermined position that does not collide with the substrate stage ST1.

之後,控制裝置CONT在使得基板載台ST1與測量載台ST2分開之狀態下,對於由基板載台ST1所支持之基板P進行步進掃描方式之液浸曝光。當進行基板P之液浸曝光時,控制裝置CONT乃藉由液浸機構1對在投影光學系統PL與基板P之間的曝光用光EL之光路空間K1充滿液體LQ於基板P上形成液體LQ之液浸區域LR,透過投影光學系統PL與液體LQ對基板P上照射曝光用光EL,藉此,將基板P加以曝光(步驟SA7)。於投影光學系統PL與基板P之間的光路空間K1所充滿之液體LQ係於步驟SA3經判斷為無水質異常而處於所需狀態之液體LQ。是以,可透過該處於既定狀態之液體LQ對基板P進行良好的曝光。Thereafter, the control unit CONT performs immersion exposure of the substrate P supported by the substrate stage ST1 in a step-scan manner in a state where the substrate stage ST1 and the measurement stage ST2 are separated. When the liquid immersion exposure of the substrate P is performed, the control device CONT fills the optical path space K1 of the exposure light EL between the projection optical system PL and the substrate P by the liquid immersion mechanism 1 to form a liquid LQ on the substrate P. In the liquid immersion area LR, the exposure light EL is applied to the substrate P through the projection optical system PL and the liquid LQ, whereby the substrate P is exposed (step SA7). The liquid LQ filled in the optical path space K1 between the projection optical system PL and the substrate P is the liquid LQ determined to be in a desired state without water quality abnormality in step SA3. Therefore, the substrate P can be well exposed through the liquid LQ in a predetermined state.

控制裝置CONT對於基板P實行步進掃描方式之液浸曝光動作,對基板P上複數曝光照射區域分別依序轉印光罩M之圖案。又,為了對基板P上各曝光照射區域進行曝光而移動基板載台ST1之動作係依據自上述基板對準結果所得之基板P上之複數曝光照射區域之位置座標與基線資訊來進行。The control device CONT performs a liquid immersion exposure operation of the step-and-scan method on the substrate P, and sequentially transfers the pattern of the mask M to the plurality of exposure-illuminated regions on the substrate P. Further, the operation of moving the substrate stage ST1 in order to expose the respective exposure areas on the substrate P is performed based on the position coordinates and the baseline information of the plurality of exposure areas on the substrate P obtained from the substrate alignment result.

圖7係基板P處於液浸曝光狀態之圖。於液浸曝光中,液浸區域LR之液體LQ係與基板P接觸,關於利用液體回收機構20自基板P上回收之液體LQ水質之資訊係由測量裝置60做經時性測量(監測)。測量裝置60之測量結果係輸出至控制裝置CONT。控制裝置CONT將測量裝置60之測量結果(監測結果)儲存於記憶裝置MRY(步驟SA8)。Fig. 7 is a view showing the substrate P in a state of liquid immersion exposure. In the immersion exposure, the liquid LQ of the liquid immersion area LR is in contact with the substrate P, and the information on the water quality of the liquid LQ recovered from the substrate P by the liquid recovery mechanism 20 is measured (monitored) by the measuring device 60. The measurement result of the measuring device 60 is output to the control device CONT. The control unit CONT stores the measurement result (monitoring result) of the measuring device 60 in the memory device MRY (step SA8).

控制裝置CONT係對應於時間經過將測量裝置60對在基板P上所配置之液體LQ的測量結果儲存於記憶裝置MRY。例如,控制裝置CONT可依據雷射干涉儀94之測量結果,以液浸區域LR自測量載台ST2上移動至基板載台ST1上(基板P)時做為時間經過之測量開始時點(基準),將測量裝置60之測量結果對應於時間經過來儲存於記憶裝置MRY。於以下之說明中,將對應於時間經過所儲存之資訊(此處為關於在投影光學系統PL與基板載台ST1上基板P之間所充滿之液體LQ之水質以測量裝置60所測量之結果)權宜地稱為「第3日誌資訊」。The control device CONT stores the measurement result of the liquid LQ disposed on the substrate P by the measuring device 60 in the memory device MRY in response to the passage of time. For example, the control device CONT can be used as the measurement start time point (reference) when the liquid immersion area LR is moved from the measurement stage ST2 to the substrate stage ST1 (substrate P) according to the measurement result of the laser interferometer 94. The measurement result of the measuring device 60 is stored in the memory device MRY corresponding to the passage of time. In the following description, the information corresponding to the time-lapse stored information (here, the water quality of the liquid LQ filled between the projection optical system PL and the substrate P on the substrate stage ST1) is measured by the measuring device 60. ) Expediently referred to as "third log information."

又,於本實施形態中複數基板P係被依序曝光。當複數基板P被依序曝光時,控制裝置CONT會對應於基板P將測量裝置60之測量結果儲存於記憶裝置MRY。於以下之說明中,將對應於時間經過所儲存之資訊(此處為關於當複數基板P被依序曝光時,在投影光學系統PL與基板載台ST1上基板P之間所充滿之液體LQ之水質以測量裝置60所測量之結果)權宜地稱為「第4日誌資訊」。Further, in the present embodiment, the plurality of substrates P are sequentially exposed. When the plurality of substrates P are sequentially exposed, the control device CONT stores the measurement results of the measuring device 60 in the memory device MRY corresponding to the substrate P. In the following description, the information corresponding to the time lapse is stored (here, the liquid LQ filled between the projection optical system PL and the substrate P on the substrate stage ST1 when the plurality of substrates P are sequentially exposed) The water quality is measured by the measurement device 60 and is expediently referred to as "fourth log information".

又,控制裝置CONT將測量裝置60之測量結果對應於被曝光之曝光照射區域來儲存於記憶裝置MRY。控制裝置CONT可例如依據進行基板載台ST1位置測量之雷射干涉儀94的輸出,求出在雷射干涉儀94所規定之座標系統中之曝光照射區域之位置資訊,將求出位置資訊之曝光照射區域曝光時之測量裝置60的測量結果對應於照射曝光區域來儲存於記憶裝置MRY。又,由於以測量裝置60測量液體LQ之時點、以及經測量之液體LQ配置於基板P上(曝光照射區域上)之時點,會隨測量裝置60之取樣口(分支管)與回收口22之距離而發生時間差,此時只需考慮該距離來修正於記憶裝置MRY所儲存之資訊即可。於以下說明中,將對應於曝光照射區域所儲存之測量裝置60之測量結果權宜地稱為「第5日誌資訊」。Further, the control unit CONT stores the measurement result of the measuring device 60 in the memory device MRY corresponding to the exposed exposure area. The control device CONT can determine the position information of the exposure illumination area in the coordinate system defined by the laser interferometer 94, for example, based on the output of the laser interferometer 94 that performs the position measurement of the substrate stage ST1, and obtain the position information. The measurement result of the measuring device 60 when the exposure irradiation region is exposed corresponds to the irradiation exposure region to be stored in the memory device MRY. Moreover, since the point at which the liquid LQ is measured by the measuring device 60 and the time at which the measured liquid LQ is disposed on the substrate P (on the exposed irradiation region), the sampling port (branch tube) and the recovery port 22 of the measuring device 60 are used. The time difference occurs, and it is only necessary to consider the distance to correct the information stored in the memory device MRY. In the following description, the measurement result corresponding to the measuring device 60 stored in the exposure irradiation area is expediently referred to as "5th log information".

控制裝置CONT係依據於步驟SA2中對在投影光學系統PL與測量載台ST2之既定區域100間所充滿之液體LQ以測量裝置60所測量之測量結果、以及於步驟SA8中對在投影光學系統PL與基板P間所充滿之液體LQ以測量裝置60所測量之測量結果,如以下說明般,求出關於基板P之資訊(步驟SA9)。The control device CONT is based on the measurement result measured by the measuring device 60 for the liquid LQ filled between the projection optical system PL and the predetermined region 100 of the measurement stage ST2 in step SA2, and the projection optical system in step SA8. The liquid LQ filled between the PL and the substrate P is measured by the measuring device 60, and information about the substrate P is obtained as described below (step SA9).

圖8係顯示基板P之一例之圖。於圖8中,基板P係具有基材2以及於該基材2之上面2A的一部分所被覆著之感光材3。基材2係包含例如矽晶圓(半導體晶圓)。感光材3係於佔有基材2之上面2A中央部絕大部分之區域以既定厚度(例如200nm左右)被覆著。另一方面,於基材2之上面2A的周圍部2As並未被覆著感光材3,於該上面2A的周圍部2As露出著基材2。又,雖於基材2之側面2C、下面(背面)2B亦未被覆著感光材3,但亦可於側面2C、下面2B或是周圍部2As被覆感光材3。於本實施形態中,感光材3係使用化學放大型光阻。Fig. 8 is a view showing an example of the substrate P. In FIG. 8, the substrate P has a base material 2 and a photosensitive material 3 covered with a part of the upper surface 2A of the base material 2. The substrate 2 includes, for example, a germanium wafer (semiconductor wafer). The photosensitive material 3 is covered with a predetermined thickness (for example, about 200 nm) in a region where most of the central portion of the upper surface 2A of the substrate 2 is occupied. On the other hand, the peripheral portion 2As of the upper surface 2A of the base material 2 is not covered with the photosensitive material 3, and the base material 2 is exposed at the peripheral portion 2As of the upper surface 2A. Further, the photosensitive material 3 is not coated on the side surface 2C and the lower surface (back surface) 2B of the substrate 2, but the photosensitive material 3 may be coated on the side surface 2C, the lower surface 2B, or the peripheral portion 2As. In the present embodiment, the photosensitive material 3 is a chemically amplified photoresist.

一旦基板P與液浸區域LR之液體LQ發生接觸,基板P之一部分會溶出至液體LQ中。如上述般,本實施形態之感光材3為化學放大型光阻,此化學放大型光阻係包含基礎樹脂、於基礎樹脂中所含光酸產生劑(PAG:Photo Acid Generator)以及被稱為淬冷劑(quencher)之胺系物質而形成者。此種感光材3一旦與液體LQ接觸,則感光材3之一部分、具體而言為PAG或胺系物質等會溶出至液體LQ中。又,即使是基材2之周圍部2As與液體LQ接觸的情況,隨構成基材2之物質種類,基材2之一部分(矽)也有可能溶出至液體LQ中。於以下之說明中,將自基板P溶出至液體LQ之物質(PAG、胺系物質、矽等)權宜地稱為「溶出物質」。Once the substrate P comes into contact with the liquid LQ of the liquid immersion area LR, a portion of the substrate P is eluted into the liquid LQ. As described above, the photosensitive material 3 of the present embodiment is a chemically amplified photoresist, and the chemically amplified photoresist includes a base resin, a photoacid generator (PAG: Photo Acid Generator) contained in the base resin, and is called Formed by an amine-based substance of a quencher. When such a photosensitive material 3 comes into contact with the liquid LQ, a part of the photosensitive material 3, specifically PAG or an amine-based substance, is eluted into the liquid LQ. Further, even when the peripheral portion 2As of the substrate 2 is in contact with the liquid LQ, a part of the substrate 2 may be eluted into the liquid LQ depending on the type of the material constituting the substrate 2. In the following description, the substance (PAG, amine-based substance, hydrazine, etc.) eluted from the substrate P to the liquid LQ is expediently referred to as "eluting substance".

於步驟SA8中由測量裝置60所測量之液體LQ為在投影光學系統PL與基板P之間之液體LQ,為與基板P接觸後之液體LQ。是以,由測量裝置60所測量之液體LQ中含有自基板P溶出至液體LQ中之溶出物質。另一方面,於步驟SA2由測量裝置60所測量之液體LQ為污染受到抑制之液體LQ、換言之為不含溶出物質之液體LQ。是以,控制裝置CONT可藉由將步驟SA2所測量之測量結果與步驟SA8所測量之測量結果加以比較,以關於基板P之資訊的形式來求出關於自基板P溶出至液體LQ之溶出物質的資訊。此外,上述第3、第4、第5日誌資訊係包含關於自基板P溶出至液體LQ之溶出物質的資訊。The liquid LQ measured by the measuring device 60 in step SA8 is the liquid LQ between the projection optical system PL and the substrate P, and is the liquid LQ after coming into contact with the substrate P. Therefore, the liquid LQ measured by the measuring device 60 contains the eluted material eluted from the substrate P into the liquid LQ. On the other hand, the liquid LQ measured by the measuring device 60 in the step SA2 is the liquid LQ whose contamination is suppressed, in other words, the liquid LQ which does not contain the eluted material. Therefore, the control device CONT can compare the measurement result measured in step SA2 with the measurement result measured in step SA8 to determine the elution substance eluted from the substrate P to the liquid LQ in the form of information about the substrate P. Information. Further, the third, fourth, and fifth log information includes information on the eluted material eluted from the substrate P to the liquid LQ.

所謂自基板P溶出至液體LQ之溶出物質的資訊,包含溶出物質之溶出量、物性(種類)等之各種資訊。控制裝置CONT可依據於步驟SA2以測量裝置60所測量之關於水質之測量結果以及於步驟SA8以測量裝置60所測量之關於水質之測量結果,來求出自基板P溶出至液體LQ之溶出物質的溶出量。The information on the eluted material eluted from the substrate P to the liquid LQ includes various information such as the elution amount of the eluted material and the physical property (type). The control device CONT can determine the eluted material eluted from the substrate P to the liquid LQ according to the measurement result of the water quality measured by the measuring device 60 in step SA2 and the measurement result about the water quality measured by the measuring device 60 in step SA8. The amount of dissolution.

例如控制裝置CONT可依據測量裝置60當中TOC計61之測量結果,求出自基板P溶出之溶出物質當中、尤其是自感光材3溶出之溶出物質的溶出量。或者是,藉由事先設置可測量液體LQ中之溶出物質濃度之測量器做為測量裝置60,來測量溶出物質之溶出量(液體LQ中之溶出物質濃度)。是以,控制裝置CONT可依據於步驟SA2所測量之溶出物質之溶出量與於步驟SA8所測量之溶出物質之溶出量的差,求出自基板P溶出至液體LQ之溶出物質的溶出量。For example, the control device CONT can determine the elution amount of the eluted material eluted from the substrate P, particularly the eluted material eluted from the photosensitive material 3, based on the measurement result of the TOC meter 61 in the measuring device 60. Alternatively, the elution amount of the eluted substance (the concentration of the eluted substance in the liquid LQ) is measured by a measuring device that previously sets the concentration of the eluted substance in the measurable liquid LQ as the measuring device 60. Therefore, the control unit CONT can determine the elution amount of the eluted material eluted from the substrate P to the liquid LQ based on the difference between the eluted amount of the eluted substance measured in step SA2 and the eluted amount of the eluted substance measured in step SA8.

又測量裝置60若是先設置可測量自基板P溶出之溶出物質(感光材3、PAG等)種類之測量器,可特定溶出物質之種類。Further, if the measuring device 60 is provided with a measuring device capable of measuring the type of eluted matter (photosensitive material 3, PAG, etc.) eluted from the substrate P, the type of the eluted substance can be specified.

如前述般,控制裝置CONT可依據測量裝置60之測量結果來求出溶出物質之溶出量、感光材3之種類等關於基板P之資訊。As described above, the control device CONT can determine the information on the substrate P, such as the elution amount of the eluted material and the type of the photosensitive material 3, based on the measurement result of the measuring device 60.

又,於本實施形態中,事先求出基板條件與對液體LQ之溶出物質之溶出量之關係,將該關係事先儲存於記憶裝置MRY。此處所說之基板條件係包含感光材3之種類等關於感光材3之條件、或是基材2之物性(種類)、是否形成有周圍部2As(基材2與液體LQ是否接觸)等關於基材2之條件。又,基板接觸亦包含感光材3之膜厚等將感光材3塗佈於基材2時之塗佈條件。Further, in the present embodiment, the relationship between the substrate condition and the elution amount of the eluted material for the liquid LQ is obtained in advance, and the relationship is stored in advance in the memory device MRY. The substrate conditions referred to herein include the conditions of the photosensitive material 3 such as the type of the photosensitive material 3, the physical properties (types) of the substrate 2, whether or not the peripheral portion 2As is formed (whether the substrate 2 and the liquid LQ are in contact with each other), and the like. The condition of the substrate 2. Moreover, the substrate contact also includes the coating conditions when the photosensitive material 3 is applied to the substrate 2, such as the film thickness of the photosensitive material 3.

於本實施形態中,具有互異基板條件之複數基板P(批量)係被依序曝光,記憶裝置MRY係儲存著關於與複數基板P(批量)對應之溶出物質溶出量的資訊。溶出物質對液體LQ之溶出量,為了對應於基板條件(感光材3之物性、膜厚等)來變化,例如可藉由實驗或模擬等來事先前出基板條件與溶出物質對液體LQ之溶出量的關係。In the present embodiment, the plurality of substrates P (batch) having the conditions of the different substrates are sequentially exposed, and the memory device MRY stores information on the elution amount of the eluted substances corresponding to the plurality of substrates P (batch). The amount of elution of the eluted material to the liquid LQ changes in accordance with the substrate condition (physical properties, film thickness, and the like of the photosensitive material 3). For example, the substrate condition and the elution of the eluted material to the liquid LQ can be performed in advance by experiments or simulations. The relationship between quantity.

是以,當將既定基板條件之基板P液浸曝光時之測量裝置60的測量值(溶出物質之溶出量)相對於與儲存於記憶裝置MRY之前述既定基板條件對應之溶出物質之溶出量有顯著差異的情況(測量裝置60之測量結果為異常的情況),控制裝置CONT乃判斷基板P為異常狀態,可控制曝光動作。Therefore, when the substrate P of the predetermined substrate condition is immersed and exposed, the measurement value of the measuring device 60 (the elution amount of the eluted material) is relative to the eluted amount of the eluted material corresponding to the predetermined substrate condition stored in the memory device MRY. In the case of a significant difference (when the measurement result of the measuring device 60 is abnormal), the control device CONT determines that the substrate P is in an abnormal state and can control the exposure operation.

又,當關於在基板載台ST1上所保持之基板P的資訊為未知的情況下,可依據測量裝置60(例如TOC計61)之測量結果與記憶裝置MRY之儲存資訊(基板條件與溶出物質對液體LQ之溶出量之關係)來預測測量對象之基板P上的感光材3種類、塗佈條件等之關於基板P之資訊。Further, when the information on the substrate P held on the substrate stage ST1 is unknown, the measurement result of the measuring device 60 (for example, the TOC meter 61) and the storage information of the memory device MRY (substrate condition and eluted substance) may be used. The relationship with respect to the amount of elution of the liquid LQ is used to predict the information on the substrate P such as the type of the photosensitive material 3 on the substrate P to be measured and the coating conditions.

又,如圖9所示般,當感光材3以薄膜4被覆之情況,以測量裝置60所測量之溶出物質之量變少。此處,被覆感光材3之薄膜4係防反射膜(top ARC)或表塗膜(保護膜)等。又薄膜4也有可能為將在感光材3上所形成之防反射膜加以覆蓋之表塗膜。表塗膜係將感光材3自液體LQ加以隔離者,以例如氟系撥液性材料所形成。藉由設置薄膜4,即使基板P與液體LQ接觸,也可抑制溶出物質自感光材3溶出至液體LQ中。是以,當感光材3以薄膜4所被覆之情況,在步驟SA2之測量結果(溶出物質之溶出量)與在步驟SA8之測量結果(溶出物質之溶出量)的差相較於感光材3未被薄膜4所被覆時來得小。是以,控制裝置CONT可依據測量裝置60之測量結果來判定感光材3是否為薄膜4所被覆。如此,控制裝置CONT可依據測量裝置60之測量結果來求出有無薄膜4做為關於基板P之資訊。Further, as shown in FIG. 9, when the photosensitive material 3 is covered with the film 4, the amount of the eluted substance measured by the measuring device 60 becomes small. Here, the film 4 covering the photosensitive material 3 is an anti-reflection film (top ARC) or a surface coating film (protective film). Further, the film 4 may be a surface coating film which covers the antireflection film formed on the photosensitive material 3. The surface coating film is formed by isolating the photosensitive material 3 from the liquid LQ, for example, a fluorine-based liquid-repellent material. By providing the film 4, even if the substrate P comes into contact with the liquid LQ, elution of the eluted material from the photosensitive material 3 into the liquid LQ can be suppressed. In the case where the photosensitive material 3 is covered with the film 4, the difference between the measurement result in the step SA2 (the elution amount of the eluted material) and the measurement result in the step SA8 (the elution amount of the eluted material) is compared with the photosensitive material 3 It is small when it is not covered by the film 4. Therefore, the control unit CONT can determine whether or not the photosensitive material 3 is covered by the film 4 based on the measurement result of the measuring device 60. In this manner, the control unit CONT can determine whether or not the film 4 is used as information about the substrate P based on the measurement result of the measuring device 60.

又,隨構成薄膜4之物質的不同,有可能感光材3之既定物質透過薄膜4溶出至液體中、或是形成薄膜4之材料的物質溶出至液體中。是以,依據測量裝置60之測量結果所求出之關於基板P的資訊除了感光材3上有無薄膜4以外,尚包含薄膜4之材料(物質)等資訊。Further, depending on the substance constituting the film 4, it is possible that a predetermined substance of the photosensitive material 3 is eluted into the liquid through the film 4, or a substance forming the material of the film 4 is eluted into the liquid. Therefore, the information on the substrate P obtained based on the measurement result of the measuring device 60 includes information such as the material (substance) of the film 4 in addition to the presence or absence of the film 4 on the photosensitive material 3.

又,於本實施形態中,係以自基板P溶出至液體LQ之溶出物質的溶出量(液體LQ中之溶出物質濃度)成為事先求出之容許值以下的方式將基板條件與曝光條件做最適化設定。此處所說之曝光條件包含液體LQ之條件,其包含了液體LQ之物性(種類)、液體LQ每單位時間之供應量、液體LQ之溫度、液體LQ在基板P上之流速、基板P與液體LQ接觸之液體接觸時間等。只要對液體LQ溶出之溶出物質的溶出量(液體LQ中之溶出物質濃度)在前述容許值以下,便能對基板P進行良好的曝光。In the present embodiment, the substrate conditions and the exposure conditions are optimized so that the elution amount of the eluted material eluted from the substrate P to the liquid LQ (the concentration of the eluted substance in the liquid LQ) is equal to or less than the allowable value obtained in advance. Settings. The exposure conditions referred to herein include the conditions of the liquid LQ, which include the physical properties (type) of the liquid LQ, the supply amount of the liquid LQ per unit time, the temperature of the liquid LQ, the flow rate of the liquid LQ on the substrate P, the substrate P and the liquid. Liquid contact time of LQ contact, etc. The substrate P can be well exposed as long as the elution amount of the eluted substance eluted from the liquid LQ (the concentration of the eluted substance in the liquid LQ) is equal to or less than the allowable value.

此處,於以下說明中,將關於在投影光學系統PL與基板P之間所充滿之液體LQ水質之容許值權宜地稱為「第2容許值」。第2容許值意指關於液體LQ水質受到於投影光學系統PL像面側所配置之物體(此處為基板P)之影響的容許值。Here, in the following description, the allowable value of the liquid LQ water quality filled between the projection optical system PL and the substrate P is expediently referred to as a "second allowable value". The second allowable value means an allowable value that the liquid LQ water quality is affected by an object (here, the substrate P) disposed on the image plane side of the projection optical system PL.

關於溶出量之第2容許值之資訊,可藉由例如實驗或是模擬來事先求出。當自基板P溶出至液體LQ之溶出物質的溶出量達第2容許值以上之情況,液體LQ中之溶出物質的濃度變高造成液體LQ穿透率降低,曝光用光EL無法透過液體LQ良好地到達基板P上,可能發生此等透過液體LQ之曝光精度的惡化情況。又,當自基板P溶出至液體LQ之溶出物質的溶出量達第2容許值以上之情況,有可能與該液體LQ接觸之構件(嘴構件70、回收管23、第1光學元件LS1等)被污染,或是溶出物質於基板P上再度附著成為異物作用,形成附著痕跡(水痕)。於本實施形態中,藉由將自基板P溶出至液體LQ之溶出物質的溶出量控制在第2容許值以下,以抑制上述不佳情況之發生。The information on the second allowable value of the elution amount can be obtained in advance by, for example, an experiment or a simulation. When the elution amount of the eluted material eluted from the substrate P to the liquid LQ is equal to or higher than the second allowable value, the concentration of the eluted substance in the liquid LQ is increased to lower the liquid LQ transmittance, and the exposure light EL is not transparent to the liquid LQ. When the ground reaches the substrate P, the deterioration of the exposure accuracy of the permeated liquid LQ may occur. In addition, when the elution amount of the eluted material eluted from the substrate P to the liquid LQ is equal to or higher than the second allowable value, the member that is in contact with the liquid LQ (the nozzle member 70, the recovery tube 23, the first optical element LS1, etc.) may be used. It is contaminated, or the eluted substance is attached to the substrate P to become a foreign matter, and an adhesion mark (water mark) is formed. In the present embodiment, the elution amount of the eluted material eluted from the substrate P to the liquid LQ is controlled to be equal to or lower than the second allowable value to suppress the occurrence of the above-described inconvenience.

又,於本實施形態中,基板條件互異之複數基板P(批量)係被依序曝光,記憶裝置MRY係事先儲存著與複數基板P(批量)對應之複數第2容許值之資訊。換言之,關於第2容許值之資訊係針對各個基板P(每批量)事先儲存於記憶裝置MRY中。例如,對於分別所具有之第1感光材與第2感光材為物性互異之基板P(批量)依序曝光之際,即使第1感光材對液體LQ之溶出物質的溶出量(濃度)與第2感光材對液體LQ之溶出物質的溶出量(濃度)相同,隨該等溶出物質之物性(吸光係數等)不同,也有可能發生例如雖然含有第1感光材之溶出物質的液體具有所需穿透率,但含有第2感光材之溶出物質的液體不具有所需穿透率之狀況。是以,於本實施形態中,事先求出與複數基板P(批量)分別對應之第2容許值,將關於該第2容許值之資訊事先儲存於記憶裝置MRY中。如前述般,在本實施形態中,對於各基板(各批量)事先個別求出關於溶出物質溶出量之第2容許值,而儲存於記憶裝置MRY中。Further, in the present embodiment, the plurality of substrates P (batch) having different substrate conditions are sequentially exposed, and the memory device MRY stores information of the plurality of second allowable values corresponding to the plurality of substrates P (batch) in advance. In other words, the information on the second allowable value is stored in advance in the memory device MRY for each of the substrates P (per batch). For example, when the substrate P (batch) in which the first photosensitive material and the second photosensitive material are different in physical properties are sequentially exposed, even if the elution amount (concentration) of the eluted material of the first photosensitive material to the liquid LQ is The elution amount (concentration) of the second photosensitive material to the eluted material of the liquid LQ is the same, and depending on the physical properties (absorption coefficient, etc.) of the eluted material, for example, a liquid containing the eluted material of the first photosensitive material may be required. The transmittance, but the liquid containing the eluted material of the second photosensitive material does not have the desired transmittance. In the present embodiment, the second allowable value corresponding to each of the plurality of substrates P (batch) is obtained in advance, and the information on the second allowable value is stored in advance in the memory device MRY. As described above, in the present embodiment, the second allowable value for the eluted amount of the eluted material is individually obtained for each substrate (each batch), and stored in the memory device MRY.

又,為了使得自基板P溶出至液體LQ的溶出物質之溶出量(液體LQ中之溶出物質濃度)成為事先求出之第2容許值以下,亦可在基板P上形成液浸區域LR之前,例如事先進行以未形成液浸區域LR之液體LQ來對基板P做浸漬處理等之用以抑制自基板P溶出至液浸區域LR之液體LQ的溶出物質溶出量之既定處理。或者,藉由設置圖9所示般之薄膜4,可抑制來自感光材3之溶出物質溶出至液體LQ中,故可抑制異物附著於基板P或是形成附著痕跡,或是抑制與液體LQ接觸之構件(嘴構件70、回收管23等)之污染。In addition, in order to make the elution amount of the eluted substance eluted from the substrate P to the liquid LQ (the concentration of the eluted substance in the liquid LQ) equal to or less than the second allowable value obtained in advance, the liquid immersion area LR may be formed on the substrate P. For example, a predetermined process for suppressing the elution amount of the eluted substance of the liquid LQ eluted from the substrate P to the liquid immersion area LR by immersing the substrate P in the liquid LQ in which the liquid immersion area LR is not formed is performed in advance. Alternatively, by providing the film 4 as shown in FIG. 9, it is possible to suppress elution of the eluted material from the photosensitive material 3 into the liquid LQ, thereby suppressing adhesion of foreign matter to the substrate P or formation of adhesion marks, or suppression of contact with the liquid LQ. Contamination of the components (mouth member 70, recovery tube 23, etc.).

控制裝置CONT判定測量裝置60之測量結果是否異常(步驟SA10)。亦即,控制裝置CONT依據事先求出之關於溶出物質之第2容許值以及測量裝置60之測量結果,來判定測量裝置60之測量值(溶出物質之溶出量)是否為第2容許值以上。然後,控制裝置CONT乃依據前述判定結果來控制曝光動作。The control unit CONT determines whether or not the measurement result of the measuring device 60 is abnormal (step SA10). In other words, the control unit CONT determines whether or not the measured value (dissolved amount of the eluted substance) of the measuring device 60 is equal to or greater than the second allowable value based on the second allowable value of the eluted substance and the measurement result of the measuring device 60. Then, the control unit CONT controls the exposure operation in accordance with the aforementioned determination result.

於步驟SA10中,當判斷測量裝置60之測量結果未出現異常之時、亦即測量裝置60之測量結果(溶出物質之溶出量)為關於事先求出之溶出物質的第2容許值以下之時,控制裝置CONT乃持續進行液浸曝光動作(步驟SA11)。此時,控制裝置CONT能以告知裝置INF來告知測量裝置60之測量結果(監測資訊)。In step SA10, when it is determined that the measurement result of the measuring device 60 is not abnormal, that is, the measurement result of the measuring device 60 (the elution amount of the eluted substance) is less than or equal to the second allowable value of the eluted substance obtained in advance. The control device CONT continues the liquid immersion exposure operation (step SA11). At this time, the control device CONT can inform the measurement device INF of the measurement result (monitoring information) by the notification device INF.

控制裝置CONT在對於基板載台ST1上基板P之液浸曝光結束後(步驟SA12),使用測量載台SD2將測量載台ST2移動,使得測量載台ST2朝基板載台ST1接觸(接近)。然後,將液體LQ之液浸區域LR自基板載台ST1之上面95朝測量載台ST2之上面97移動。將液體LQ之液浸區域LR移動至測量載台ST2上之後,將基板載台ST1移動至基板更換位置。在基板更換位置,曝光後之基板P自基板載台ST1卸載,曝光前之基板P負載至基板載台ST1。然後,對於該曝光前之基板P進行曝光處理。After the immersion exposure of the substrate P on the substrate stage ST1 is completed (step SA12), the control stage CONT moves the measurement stage ST2 using the measurement stage SD2 so that the measurement stage ST2 contacts (closes) toward the substrate stage ST1. Then, the liquid immersion area LR of the liquid LQ is moved from the upper surface 95 of the substrate stage ST1 toward the upper surface 97 of the measurement stage ST2. After the liquid immersion area LR of the liquid LQ is moved to the measurement stage ST2, the substrate stage ST1 is moved to the substrate replacement position. At the substrate replacement position, the exposed substrate P is unloaded from the substrate stage ST1, and the substrate P before exposure is loaded to the substrate stage ST1. Then, exposure processing is performed on the substrate P before the exposure.

然後,控制裝置CONT重複上述程序,將複數之基板P依序曝光。於記憶裝置MRY中係儲存與保存著上述第1、第2、第3、第4、第5之日誌資訊。可使用該等日誌資訊,進行曝光不良(錯誤)之解析(步驟SA13)。Then, the control unit CONT repeats the above procedure to sequentially expose the plurality of substrates P. The first, second, third, fourth, and fifth log information is stored and stored in the memory device MRY. The log information can be used to analyze the poor exposure (error) (step SA13).

另一方面,於步驟SA10中,當判斷測量裝置60之測量結果為異常時、亦即測量裝置60之測量結果(溶出物質之溶出量)為關於事先求出之溶出物質之第2容許值以上時,控制裝置CONT乃停止曝光動作(步驟SA16)。此時,控制裝置CONT亦可例如對在供應管13所設置之閥13B加以驅動以將供應管13之流路封閉,停止液體LQ之供應。又,於曝光動作停止後,於基板P上所殘留之液體LQ亦能以嘴構件70、液體回收機構20來回收。再者,將基板P上之殘留液體LQ回收後亦可將基板P以基板載台ST1來搬出(卸載)。藉此,可防止因持續於異常狀態下進行曝光處理而形成大量不良曝光照射區域(不良基板)等不佳情況。On the other hand, when it is determined in step SA10 that the measurement result of the measuring device 60 is abnormal, that is, the measurement result of the measuring device 60 (the elution amount of the eluted substance) is equal to or higher than the second allowable value of the eluted substance obtained in advance. At this time, the control unit CONT stops the exposure operation (step SA16). At this time, the control unit CONT can also drive the valve 13B provided in the supply pipe 13 to close the flow path of the supply pipe 13, and stop the supply of the liquid LQ. Further, after the exposure operation is stopped, the liquid LQ remaining on the substrate P can be recovered by the nozzle member 70 and the liquid recovery mechanism 20. Further, after the residual liquid LQ on the substrate P is recovered, the substrate P can be carried out (unloaded) on the substrate stage ST1. Thereby, it is possible to prevent a situation in which a large number of defective exposure areas (defective substrates) are formed due to continuous exposure processing in an abnormal state.

又,控制裝置CONT將測量裝置60之測量結果(監測資訊)以告知裝置INF來告知(步驟SA17)。例如能將關於液體LQ中所含感光材3所造成之溶出物質之溶出量之資訊、關於該溶出物質隨時間經過之變動量之資訊、當對於複數曝光照射區域中特定之曝光照射區域進行曝光時之液體LQ中所含溶出物質之溶出量(液體LQ中之溶出物質之濃度)之資訊,以包含顯示裝置之告知裝置INF來顯示。又,當判斷測量裝置60之測量結果為異常的情況下,控制裝置CONT能以告知裝置INF發出警報(警告)等來告知測量結果為異常之要旨。此外,當對於第2容許值以上之溶出物質的溶出量進行測量的情況,能以告知裝置INF來告知關於促使基板條件(例如感光材3之塗佈條件)修正之要旨。或者,關於基板P,當測量出第2容許值以上之溶出物質的溶出量的情況,能以告知裝置INF來告知關於促使曝光條件(例如液體LQ單位時間之供應量等)修正之要旨。Further, the control unit CONT notifies the measurement result (monitoring information) of the measuring device 60 to the device INF (step SA17). For example, information on the elution amount of the eluted material caused by the photosensitive material 3 contained in the liquid LQ, information on the amount of change in the eluted material over time, and exposure to a specific exposure irradiation region in the plurality of exposure irradiation regions can be performed. The information on the eluted amount of the eluted substance contained in the liquid LQ (the concentration of the eluted substance in the liquid LQ) is displayed by the notification device INF including the display device. Further, when it is judged that the measurement result of the measuring device 60 is abnormal, the control device CONT can notify the device INF of an alarm (warning) or the like to inform the measurement result that the measurement result is abnormal. In addition, when the elution amount of the eluted material of the second allowable value or more is measured, the notification device INF can be used to notify the correction of the substrate condition (for example, the coating condition of the photosensitive material 3). Alternatively, when the elution amount of the eluted material having the second allowable value or more is measured on the substrate P, the notification device INF can be used to notify the correction of the exposure condition (for example, the supply amount of the liquid LQ unit time).

又,當對於在該基板P(批量)所使用之感光材3應該不含之物質進行測量的情況,能以告知裝置INF告知該要旨。又,當對於在該基板P(批量)所使用之感光材3應該不含之物質進行測量的情況,能以告知裝置INF告知促使檢查感光材3之要旨。又,當應該已被薄膜4所被覆然而溶出物質之溶出量在容許值以上的情況,能以告知裝置INF告知促使檢查是否被覆著薄膜4、當被覆著薄膜4之情況下是否良好地被覆著之要旨。Moreover, when the measurement of the substance which should not be contained in the photosensitive material 3 used for this board|substrate P (batch) is carried out, it can be notified by the notification apparatus INF. In addition, when the measurement of the substance which should not be contained in the photosensitive material 3 used for the board|substrate P (batch) is carried out, the notification apparatus INF can be informed, and the thing of the inspection of the photosensitive material 3 can be informed. Further, when the film 4 should be coated with the film 4 and the elution amount of the eluted material is equal to or higher than the allowable value, the notification device INF can be used to notify whether or not the film 4 is covered, and whether the film 4 is coated or not is well covered. The gist of the matter.

或者,能將基板P曝光中關於液體LQ中所含TOC、溶解氣體濃度隨時間經過之變動量的資訊、關於對複數曝光照射區域中特定之曝光照射區域進行曝光時液體LQ中所含TOC、溶解氣體濃度之資訊以包含顯示裝置之告知裝置INF來顯示。Alternatively, the information on the amount of change in the concentration of the TOC and the dissolved gas contained in the liquid LQ with respect to the passage of time in the exposure of the substrate P, and the TOC contained in the liquid LQ during exposure to the specific exposure irradiation region in the plurality of exposure irradiation regions can be obtained. The information of the dissolved gas concentration is displayed by the notification device INF including the display device.

又於步驟SA10中,即使判斷液體LQ出現異常,控制裝置CONT仍可持續進行曝光動作。此外,例如對某特定之曝光照射區域進行曝光,而判斷測量裝置60之TOC計61的測量結果為異常時,控制裝置CONT對應於該曝光照射區域將TOC測量結果為異常之要旨以第5日誌資訊來儲存於記憶裝置MRY。此外,於全部的曝光照射區域完成曝光之後,依據記憶裝置MRY所儲存之第5日誌資訊,控制裝置CONT可將可能因測量結果異常(溶出物質之溶出量在容許值以上)導致圖案轉印精度惡化之曝光照射區域加以移除或是在下次之重疊曝光之時施行避免被曝光之處理等措施。又,當檢查曝光照射區域,發現所形成之圖案並無異常之情況下,乃不移除曝光照射區域,持續使用該曝光照射區域來形成元件。或者,控制裝置CONT亦可對應於該曝光照射區域以告知裝置INF來告知TOC計61之測量結果為異常之主旨。如前述般,控制裝置CONT除了可將測量裝置60之測量結果以監測資訊的形式即時以告知裝置INF來顯示以外,亦可將日誌資訊以告知裝置INF來顯示。Further, in step SA10, even if it is judged that the liquid LQ is abnormal, the control unit CONT can continue the exposure operation. Further, for example, when a specific exposure irradiation region is exposed and it is determined that the measurement result of the TOC meter 61 of the measuring device 60 is abnormal, the control device CONT corresponds to the exposure irradiation region, and the TOC measurement result is abnormal. Information is stored in the memory device MRY. In addition, after the exposure is completed in all the exposure areas, according to the fifth log information stored in the memory device MRY, the control device CONT may cause pattern transfer accuracy due to abnormal measurement results (the elution amount of the eluted material is above the allowable value). The deteriorated exposure area is removed or measures such as avoiding exposure are performed at the time of the next overlapping exposure. Further, when the exposure irradiation region is inspected and it is found that the formed pattern is not abnormal, the exposure irradiation region is not removed, and the exposure irradiation region is continuously used to form the element. Alternatively, the control device CONT may correspond to the exposure irradiation region to notify the device INF to inform the TOC meter 61 that the measurement result is abnormal. As described above, the control device CONT can display the measurement result of the measurement device 60 in the form of monitoring information in real time by the notification device INF, and can also display the log information by the notification device INF.

另一方面,於本實施形態中,於步驟SA3中,當測量裝置60所測量之各項目之測量值(水質)為預先設定之第1容許值以上之時,控制裝置CONT會判斷測量裝置60之測量結果為異常(水質異常)。關於水質之第1容許值可對應於在測量裝置60之測量動作後所實行之曝光程序來適宜決定。例如,於測量裝置60之測量動作(步驟SA2)之後,使用光測量器300、400、500、600來實行測量動作(步驟SA4),可依據該光測量器300、400、500、600之目標測量精度來適宜設定關於液體LQ之第1容許值。具體而言,對複數批量(基板P)進行曝光之情況,將該批量(基板P)曝光之前使用光測量器300、400、500、600進行光測量動作之情況,當關於第1批量(第1基板)要求高測量精度之時,針對該第1批量(第1基板)透過液體LQ進行測量時就有關液體LQ水質之第1容許值做嚴格設定。又,當其他第2批量(第2基板)相較於第1批量(第1基板)可容許較放寬之測量精度時,可將針對該第2批量(第2基板)透過液體LQ進行測量時就有關液體LQ水質之第1容許值做放寬設定。On the other hand, in the present embodiment, in step SA3, when the measured value (water quality) of each item measured by the measuring device 60 is equal to or greater than a predetermined first allowable value, the control device CONT determines the measuring device 60. The measurement result is abnormal (water quality is abnormal). The first allowable value of the water quality can be appropriately determined in accordance with the exposure program executed after the measurement operation of the measuring device 60. For example, after the measuring operation of the measuring device 60 (step SA2), the measuring action is performed using the light measuring devices 300, 400, 500, 600 (step SA4), depending on the target of the light measuring device 300, 400, 500, 600 The first allowable value for the liquid LQ is appropriately set in accordance with the measurement accuracy. Specifically, when the plurality of batches (substrate P) are exposed, the light measurement operation is performed using the photometers 300, 400, 500, and 600 before the batch (substrate P) is exposed, and when the first batch (the first batch) is used When the first substrate (first substrate) is subjected to the measurement of the liquid LQ, the first allowable value of the liquid LQ water quality is strictly set. In addition, when the other second batch (second substrate) can be allowed to be wider than the first batch (first substrate), the second batch (second substrate) can be measured by the liquid LQ. The relaxation is set for the first allowable value of the liquid LQ water quality.

或者,可依據基板P之目標曝光精度(目標圖案轉印精度)來將關於液體LQ水質之第2容許值做適宜設定。具體而言,將複數批量(基板P)進行曝光之際,當關於第1批量(第1基板)要求高曝光精度(圖案轉印精度)之時,針對該第1批量(第1基板)透過液體LQ進行曝光時就有關液體LQ水質之第2容許值做嚴格設定。又,當其他第2批量(第2基板)相較於第1批量(第1基板)可容許較放寬之曝光精度(圖案轉印精度)時,可將針對該第2批量(第2基板)透過液體LQ進行曝光時就有關液體LQ水質之第2容許值做放寬設定。Alternatively, the second allowable value for the liquid LQ water quality can be appropriately set in accordance with the target exposure accuracy (target pattern transfer accuracy) of the substrate P. Specifically, when a plurality of batches (substrate P) are exposed, when the first batch (first substrate) is required to have high exposure accuracy (pattern transfer accuracy), the first batch (first substrate) is transmitted. When the liquid LQ is exposed, the second allowable value of the liquid LQ water quality is strictly set. In addition, when the other second batch (second substrate) can be allowed to have a wider exposure accuracy (pattern transfer accuracy) than the first batch (first substrate), the second batch (second substrate) can be used for the second batch (second substrate). When the exposure is performed through the liquid LQ, the second allowable value of the liquid LQ water quality is relaxed.

藉由上述方式,可於第1、第2批量(第1、第2基板)分別得到所需之曝光精度與測量精度,且可防止曝光裝置EX運轉效率之降低。亦即,將關於第1批量之水質的第1、第2容許值與關於第2批量之水質的第1、第2容許值設定成相同數值的情況,乃是對第2批量要求所需以上之水質。如此一來,即便對第2批量可得到所需水質,惟測量裝置60之測量結果成為第1容許值以上或是第2容許值以上的情況,如上述般,測量動作或曝光動作會停止。於是,即便得到所需水質,由於曝光裝置EX之動作停止,乃會導致曝光裝置EX運轉效率之降低;但是藉由上述般依據目標曝光精度等來適宜設定關於液體LQ水質之容許值,可防止曝光裝置EX之運轉效率降低等不佳情況。According to the above aspect, the required exposure accuracy and measurement accuracy can be obtained in the first and second batches (the first and second substrates), and the operation efficiency of the exposure apparatus EX can be prevented from being lowered. In other words, the first and second allowable values for the water quality of the first batch and the first and second allowable values for the water quality of the second batch are set to the same value, which is required for the second batch. Water quality. In this way, even if the required water quality is obtained for the second batch, the measurement result of the measuring device 60 is equal to or higher than the first allowable value or the second allowable value. As described above, the measurement operation or the exposure operation is stopped. Therefore, even if the required water quality is obtained, the operation of the exposure apparatus EX is stopped, which may result in a decrease in the operational efficiency of the exposure apparatus EX. However, it is possible to appropriately set the allowable value of the water quality of the liquid LQ according to the target exposure accuracy or the like as described above. The operating efficiency of the exposure device EX is not good.

如以上所說明般,藉由設置測量裝置60來對在投影光學系統PL與測量載台ST2之既定區域100之間所充滿之液體LQ的性質與成分中至少一者進行測量,可依據該測量結果來精確地判定於光路空間K1所充滿之液體LQ是否處於所需狀態(是否異常)。再者,當測量裝置60之測量結果為異常的情況,藉由採行適當的措施來將液體LQ調整為所需狀態,可防止透過液體LQ之基板P的曝光精度以及透過液體LQ之光測量器之測量精度的惡化。As described above, at least one of the properties and components of the liquid LQ filled between the projection optical system PL and the predetermined region 100 of the measurement stage ST2 is measured by providing the measuring device 60, and the measurement can be performed according to the measurement. As a result, it is determined accurately whether or not the liquid LQ filled in the optical path space K1 is in a desired state (whether abnormal). Furthermore, when the measurement result of the measuring device 60 is abnormal, the exposure precision of the substrate P through the liquid LQ and the light measurement through the liquid LQ can be prevented by adjusting the liquid LQ to a desired state by taking appropriate measures. The measurement accuracy of the device deteriorates.

又於本實施形態中,於既定區域100上所配置之液體LQ由測量裝置60所測量之結果係以第1、第2日誌資訊的形式儲存於記憶裝置MRY中,且於基板P上所配置之液體LQ由測量裝置60所測量之結果係以第3、第4、第5日誌資訊的形式儲存於記憶裝置MRY中。例如,可依據第1、第2日誌資訊將構成液體供應部11之各調整裝置(液體改質構件與液體改質裝置)在最過當之時點加以維修(檢查、更換)。又,可依據第1、第2日誌資訊將對應於各調整裝置之檢查、更換的頻率做最適設定。例如,當從第1日誌資訊發現粒子計數器之測量值(異物量)隨時間經過而惡化的情況,可依據測量值隨時間經過而變化之程度來預測、設定粒子過濾器之最適更換時期(更換頻率)。又,可由第1、第2日誌資訊將所使用之粒子過濾器之性能做最適設定。例如,當粒子計數器之測量值隨時間經過而發生急速惡化之情況,使用高性能之粒子過濾器,但並未發生大幅變動之情況,使用較低性能(便宜的)粒子計數器,以此方式可謀求降低成本。如前述般,依據第1、第2日誌資訊來管理曝光裝置EX,藉此,可防止施行過多(不必要)維修造成曝光裝置之運轉率降低或是相反地忽略了維修而無法供應所需狀態之液體LQ此等不佳情況的發生。Further, in the present embodiment, the liquid LQ disposed in the predetermined area 100 is stored in the memory device MRY as the first and second log information as measured by the measuring device 60, and is disposed on the substrate P. The result of the measurement of the liquid LQ by the measuring device 60 is stored in the memory device MRY in the form of the third, fourth, and fifth log information. For example, each of the adjustment devices (the liquid reforming member and the liquid reforming device) constituting the liquid supply unit 11 can be repaired (inspected and replaced) at the most extreme point in accordance with the first and second log information. Further, the frequency of inspection and replacement corresponding to each adjustment device can be optimally set based on the first and second log information. For example, when it is found from the first log information that the measured value (foreign matter amount) of the particle counter deteriorates with time, the optimum replacement period of the particle filter can be predicted and set according to the degree of change of the measured value with time (replacement) frequency). Moreover, the performance of the used particle filter can be optimally set by the first and second log information. For example, when the measured value of the particle counter deteriorates rapidly with time, a high-performance particle filter is used, but there is no significant change, and a lower-performance (cheap) particle counter can be used. Seek to reduce costs. As described above, the exposure apparatus EX is managed based on the first and second log information, thereby preventing excessive (unnecessary) maintenance from causing a decrease in the operation rate of the exposure apparatus or neglecting the maintenance and not supplying the desired state. This poor condition of liquid LQ occurs.

又,由於第1日誌資訊係與時間經過對應之水質資訊,故可特定出水質係於何時起惡化。從而,可對應於時間經過來解析出曝光不良之發生原因。同樣地,使用第2日誌資訊亦能解析曝光不良等不佳情況(錯誤)之原因。可於基板P曝光後以後續步驟之檢查步驟來檢查基板P時,將檢查結果與第1、第2日誌資訊對照、解析來對不佳情況之原因進行解析與特定。Moreover, since the first log information is water quality information corresponding to the passage of time, it is possible to specify when the water quality deteriorates. Therefore, the cause of the occurrence of the exposure failure can be analyzed in accordance with the passage of time. Similarly, the use of the second log information can also explain the cause of poor (error) such as poor exposure. When the substrate P is inspected by the inspection step of the subsequent step after the substrate P is exposed, the inspection result is compared with the first and second log information, and the reason for the poor condition is analyzed and specified.

又,第1、第2日誌資訊未必兩者皆要取得,亦可僅取得當中一者。Moreover, the first and second log information are not necessarily obtained, and only one of them may be obtained.

又,第3日誌資訊乃對應於時間經過之水質資訊,故可依據第3日誌資訊來求出隨時間經過之溶出物質的變動量。再者,當變動量隨時間經過而顯著增加的情況,可判斷感光材3對液體LQ為可溶性。又,當於特定批量或是特定曝光照射區域發生許多曝光不良(圖案缺陷)之情況,可參照第4日誌資訊(或第5日誌資訊),當該批量(或曝光照射區域)曝光時之TOC計的測量值為異常值的情況,解析成圖案缺陷之原因為溶出物質。又,亦可採行之措施為例如依據第4日誌資訊而於曝光結束後,對於例如測量裝置60之測量結果為異常時所曝光之基板P進行重點式檢查等。又,當依據第5日誌資訊判斷特定曝光照射區域於曝光中出現液體LQ為異常之情況,控制裝置CONT可採行將該特定曝光照射區域移除、或是在下次重疊曝光時不進行曝光等之措施。或者,控制裝置CONT亦可對於進行檢查步驟之檢查裝置發出指令要求對於前述特定曝光照射區域之檢查較通常來得更為詳細。此外,可依據第3、第4、第5日誌資訊來解析圖案缺陷與溶出物質之相關關係,藉以特定出不佳情況(圖案缺陷)之原因。此外,亦可依據此解析結果來採行修正基板條件或曝光條件等措施以避免圖案缺陷之發生。Moreover, the third log information corresponds to the water quality information of the passage of time, so the amount of change of the eluted substance over time can be obtained based on the third log information. Further, when the amount of fluctuation significantly increases with time, it can be judged that the photosensitive material 3 is soluble for the liquid LQ. Moreover, when a lot of poor exposure (pattern defects) occurs in a specific batch or a specific exposure area, refer to the fourth log information (or the fifth log information), and the TOC when the batch (or the exposure area) is exposed. When the measured value is an abnormal value, the cause of the pattern defect is the eluted substance. In addition, for example, after the exposure is completed based on the fourth log information, for example, the substrate P exposed when the measurement result of the measuring device 60 is abnormal may be subjected to a key inspection or the like. Further, when it is determined according to the fifth log information that the liquid LQ is abnormal during the exposure in the specific exposure irradiation region, the control device CONT may remove the specific exposure irradiation region or not perform exposure at the next overlapping exposure. Measures. Alternatively, the control unit CONT may also issue an instruction to the inspection device that performs the inspection step to require more detailed examination of the particular exposure illumination area described above. In addition, the correlation between the pattern defect and the eluted substance can be analyzed based on the third, fourth, and fifth log information, thereby specifying the cause of the poor condition (pattern defect). In addition, measures such as correcting substrate conditions or exposure conditions may be adopted according to the analysis result to avoid occurrence of pattern defects.

又,第3、第4、第5日誌資訊未必要全部取得,亦可省略第3、第4、第5日誌資訊中之一者或是複數資訊。Moreover, the third, fourth, and fifth log information are not necessarily all obtained, and one of the third, fourth, and fifth log information or the plural information may be omitted.

又,控制裝置CONT可依據測量裝置60之測量結果來控制曝光動作與測量動作。例如,如上述般,於基板P之曝光前,使用光測量器600來測量曝光用光EL之照射量(照度)(步驟SA4),依據該測量結果將曝光用光EL之照射量(照度)設定(修正)為最適程度之後,開始曝光動作,惟例如基板P之曝光中會因為液體LQ中之TOC變動導致液體LQ之透光率發生變動。一旦液體LQ之透光率發生變動,則於基板P上之曝光量(累積曝光量)會發生變動,其結果,有可能於曝光照射區域所形成之元件圖案之曝光線寬發生不均等不佳情況。事先求出液體LQ中之TOC與此時液體LQ之穿透率的關係並儲存於記憶裝置MRY,控制裝置CONT可依據該儲存資訊與測量裝置60(TOC計61)之測量結果控制曝光量,藉以防止上述不佳情況。亦即,控制裝置CONT依據前述儲存資訊來導出液體LQ中之TOC變動所對應到之穿透率,以到達基板P之曝光量成為一定的方式加以控制。依據TOC計61所測量之TOC變化來控制基板P上之曝光量,藉此,基板內(曝光照射區間)或是基板間之曝光量成為一定,可抑制曝光線寬之不均。又,TOC與液體LQ之透光率之關係可使用光測量器600透過液體LQ以測量處理來求出。於本實施形態中,由於曝光用光EL係使用雷射,故可將每1脈衝之能量(光量)加以控制、或是將脈衝數量加以控制,以此等方法來控制基板P上之曝光量。或者,亦可藉由控制基板P之掃描速度,來控制基板P上之曝光量。Moreover, the control device CONT can control the exposure action and the measurement action according to the measurement result of the measurement device 60. For example, as described above, the exposure amount (illuminance) of the exposure light EL is measured using the photometer 600 before the exposure of the substrate P (step SA4), and the exposure amount (illuminance) of the exposure light EL is used in accordance with the measurement result. After the setting (correction) is the optimum level, the exposure operation is started. For example, in the exposure of the substrate P, the transmittance of the liquid LQ changes due to the TOC fluctuation in the liquid LQ. When the light transmittance of the liquid LQ fluctuates, the exposure amount (accumulated exposure amount) on the substrate P fluctuates, and as a result, the exposure line width of the element pattern formed in the exposure irradiation region may be uneven. Happening. The relationship between the TOC of the liquid LQ and the transmittance of the liquid LQ at this time is obtained in advance and stored in the memory device MRY, and the control device CONT can control the exposure amount according to the storage information and the measurement result of the measuring device 60 (TOC meter 61). In order to prevent the above-mentioned bad situation. That is, the control unit CONT derives the transmittance corresponding to the TOC fluctuation in the liquid LQ based on the stored information, and controls the amount of exposure to the substrate P to be constant. The exposure amount on the substrate P is controlled in accordance with the TOC change measured by the TOC meter 61, whereby the exposure amount in the substrate (exposure irradiation section) or between the substrates is constant, and variation in the exposure line width can be suppressed. Further, the relationship between the transmittance of the TOC and the liquid LQ can be obtained by the measurement process using the light measuring device 600 through the liquid LQ. In the present embodiment, since the exposure light EL uses a laser, the amount of light per one pulse (the amount of light) can be controlled, or the number of pulses can be controlled, and the amount of exposure on the substrate P can be controlled by the method. . Alternatively, the amount of exposure on the substrate P can be controlled by controlling the scanning speed of the substrate P.

又,控制裝置CONT可依據第1日誌資訊來控制曝光動作與測量動作。例如,當依據第1日誌資訊判斷TOC值隨時間經過有逐漸惡化之情況,曝光裝置EX可依據以第1日誌資訊的形式所儲存之對應於TOC時間經過之值(變化量),將曝光量隨時間經過來加以控制,藉此將基板P間之曝光量調整為一定,降低曝光線寬之不均。Further, the control unit CONT can control the exposure operation and the measurement operation based on the first log information. For example, when it is judged according to the first log information that the TOC value gradually deteriorates with time, the exposure device EX can display the exposure amount according to the value (change amount) corresponding to the TOC time value stored in the form of the first log information. It is controlled over time to adjust the exposure amount between the substrates P to be constant, and to reduce the unevenness of the exposure line width.

另一方面,如圖1所示般,曝光裝置EX當中之液體供應機構10係具備功能液供應裝置120。控制裝置CONT對於與形成液浸區域LR之液體LQ接觸之各構件,可依據第1日誌資訊或是測量裝置60之測量結果,自液體供應機構10之功能液供應裝置120來供應功能液LK,將該等構件加以洗淨。例如,當液體LQ中之生菌量過多之情況等,液體LQ非處於所需狀態而是遭到污染,則與該液體LQ接觸之各構件,具體而言為嘴構件70之下面70A、嘴構件70之內部流路、與嘴構件70連接之供應管13、回收管23、第1光學元件LS1之下面LSA、基板載台ST1之上面95、測量載台ST2之上面97(包含光測量器300、400、500、600之各上面以及既定區域100)等可能會被污染。於是,一旦該各構件受到污染,即使自液體供應部11供應潔淨之液體LQ,液體LQ會因與該構件接觸而被污染,以該受到污染之液體LQ形成液浸區域LR的狀況下會導致透過液體LQ之曝光精度與測量精度之惡化。On the other hand, as shown in FIG. 1, the liquid supply mechanism 10 in the exposure apparatus EX is provided with the functional liquid supply apparatus 120. The control unit CONT can supply the functional liquid LK from the functional liquid supply device 120 of the liquid supply mechanism 10 according to the first log information or the measurement result of the measuring device 60 for each member that is in contact with the liquid LQ forming the liquid immersion area LR. Wash these components. For example, when the amount of bacteria in the liquid LQ is excessive, and the liquid LQ is not in a desired state but is contaminated, the members in contact with the liquid LQ, specifically, the lower portion 70A of the nozzle member 70, the mouth The internal flow path of the member 70, the supply tube 13 connected to the nozzle member 70, the recovery tube 23, the lower surface LSA of the first optical element LS1, the upper surface 95 of the substrate stage ST1, and the upper surface 97 of the measurement stage ST2 (including the optical measuring device) Each of 300, 400, 500, 600 and a predetermined area 100) may be contaminated. Then, once the members are contaminated, even if the clean liquid LQ is supplied from the liquid supply portion 11, the liquid LQ may be contaminated by contact with the member, and the liquid immersion area LR may be caused by the contaminated liquid LQ. The exposure accuracy and measurement accuracy of the liquid LQ are deteriorated.

又,當基板P上形成液體LQ之液浸區域LR的情況下,於液體LQ中含有自基板P溶出之PAG等溶出物質。是以,與含有該溶出物質之液體LQ接觸的嘴構件70容易附著由溶出物質所產生之污染物質,特別是容易於嘴構件70之回收口22附近附著污染物質。又,當回收口22設有多孔體的情況,該多孔體也容易附著污染物質。若任憑附著有污染物質之狀態持續,即使對光路空間K1供應潔淨之液體LQ,所供應之液體LQ也會因為與受到污染之嘴構件70等接觸而被污染。Further, when the liquid immersion area LR of the liquid LQ is formed on the substrate P, the liquid LQ contains eluted substances such as PAG eluted from the substrate P. Therefore, the nozzle member 70 that is in contact with the liquid LQ containing the eluted material easily adheres to the contaminant generated by the eluted substance, and in particular, the contaminant is easily attached to the vicinity of the recovery port 22 of the nozzle member 70. Further, when the recovery port 22 is provided with a porous body, the porous body is also likely to adhere to a contaminant. If the state in which the contaminant is adhered is continued, even if the clean liquid LQ is supplied to the optical path space K1, the supplied liquid LQ is contaminated by contact with the contaminated nozzle member 70 or the like.

是以,控制裝置CONT係依據測量裝置60之測量結果,判斷是否對與液體LQ接觸之構件進行洗淨。亦即,於步驟SA3中,依據測量裝置60之測量結果,當判斷測量值大於第1容許值(或是第2容許值、或是洗淨用之容許值)之情況,控制裝置CONT會將具有洗淨作用(或是殺菌作用)之功能液LK自構成液體供應機構10一部分之功能液供應裝置(洗淨裝置)120對前述各構件進行供應,以將各構件加以洗淨。Therefore, the control unit CONT determines whether or not the member in contact with the liquid LQ is cleaned based on the measurement result of the measuring device 60. That is, in step SA3, depending on the measurement result of the measuring device 60, when it is judged that the measured value is larger than the first allowable value (or the second allowable value or the allowable value for washing), the control device CONT will The functional liquid LK having a washing action (or a sterilizing action) is supplied from the functional liquid supply device (cleaning device) 120 constituting a part of the liquid supply mechanism 10 to wash the respective members.

當自功能液供應裝置120來供應功能液LK時,控制裝置CONT會使得投影光學系統PL之下面LSA與測量載台ST2之上面97或是基板載台ST1之上面95對向。或者,亦可將後述之虛置基板DP保持於基板載台ST1,使得投影光學系統PL之下面LSA與基板載台ST1之虛置基板DP對向。When the functional liquid LK is supplied from the functional liquid supply device 120, the control device CONT causes the lower LSA of the projection optical system PL to face the upper surface 97 of the measurement stage ST2 or the upper surface 95 of the substrate stage ST1. Alternatively, the dummy substrate DP to be described later may be held on the substrate stage ST1 such that the lower surface LSA of the projection optical system PL faces the dummy substrate DP of the substrate stage ST1.

在洗淨前述各構件之時,控制裝置CONT會對於將功能液供應裝置120與液體供應部11加以連接之供應管19處所設置之第2閥19B進行驅動來開通供應管19之流路,並藉由第1閥18B來封閉返管18之流路。藉此,自功能液供應裝置120對液體供應部11供應功能液LK。自功能液供應裝置120所供應之功能液LK於流經液體供應部11之後,流過供應管13、以及嘴構件70之內部流路(供應流路)之後,自供應口12供應於投影光學系統PL之像面側。又,當功能液供應裝置120供應功能液LK之際,液體回收機構20係與液浸曝光動作時同樣進行液體回收動作。是以,於投影光學系統PL之像面側所充滿之功能液LK透過回收口22被回收,流經回收管23之後,回收至液體回收部21。功能液LK藉由流經液浸機構1之流路(供應管13、回收管23、嘴構件70等)來將該等流路洗淨。When the above-described respective members are washed, the control unit CONT drives the second valve 19B provided at the supply pipe 19 that connects the functional liquid supply device 120 and the liquid supply unit 11 to open the flow path of the supply pipe 19, and The flow path of the return pipe 18 is closed by the first valve 18B. Thereby, the functional liquid LK is supplied from the functional liquid supply device 120 to the liquid supply portion 11. The functional liquid LK supplied from the functional liquid supply device 120 flows through the supply pipe 13 and the internal flow path (supply flow path) of the nozzle member 70 after flowing through the liquid supply portion 11, and is supplied from the supply port 12 to the projection optics. The image side of the system PL. Further, when the functional liquid supply device 120 supplies the functional liquid LK, the liquid recovery mechanism 20 performs the liquid recovery operation in the same manner as in the liquid immersion exposure operation. Therefore, the functional liquid LK filled on the image plane side of the projection optical system PL is recovered through the recovery port 22, flows through the recovery pipe 23, and is recovered in the liquid recovery portion 21. The functional liquid LK is washed by the flow path (supply tube 13, recovery tube 23, nozzle member 70, etc.) flowing through the liquid immersion mechanism 1.

又,於投影光學系統PL之像面側所充滿之功能液LK亦與第1光學元件LS1之下面(液體接觸面)LSA、嘴構件70之下面(液體接觸面)70A接觸之故,所以也可將該等下面LSA、70A予以洗淨。又,在形成功能液LK之液浸區域的狀態下,使得測量載台ST2(或是基板載台ST1)相對於功能液LK之液浸區域朝XY方向做2維空間移動,可將測量載台ST2之上面97、或是基板載台ST1之上面95之寬廣領域也予以洗淨。如此般,以與液浸曝光動作時同樣的順序來進行功能液LK之液浸區域形成動作,藉此,可將上述各構件同時以高效率來洗淨。Further, the functional liquid LK that is filled on the image plane side of the projection optical system PL is also in contact with the lower surface (liquid contact surface) LSA of the first optical element LS1 and the lower surface (liquid contact surface) 70A of the nozzle member 70. The lower LSA, 70A can be washed. Further, in a state in which the liquid immersion area of the functional liquid LK is formed, the measurement stage ST2 (or the substrate stage ST1) is moved in a two-dimensional space with respect to the liquid immersion area of the functional liquid LK in the XY direction, and the measurement load can be performed. The wide area of the upper surface 97 of the stage ST2 or the upper surface 95 of the substrate stage ST1 is also cleaned. In this manner, the liquid immersion area forming operation of the functional liquid LK is performed in the same order as in the liquid immersion exposure operation, whereby the above-described respective members can be simultaneously washed with high efficiency.

使用功能液LK之洗淨處理的順序,係自功能液供應裝置120供應功能液LK之後,以與液浸曝光動作時同樣的順序來持續進行既定時間之功能液LK之供應與回收動作,於投影光學系統PL之像面側形成功能液LK之液浸區域。又,亦可於加熱功能液LK之後流經液體供應機構10與液體回收機構20之流路。然後,經過既定時間後,停止功能液LK之供應與回收動作。在此狀態下,於投影光學系統PL之像面側保持著功能液LK,成為浸漬狀態。然後,將浸漬狀態維持既定時間後,控制裝置CONT利用液體供應機構10與液體回收機構20進行既定時間之純水供應與回收動作,於投影光學系統PL之像面側形成純水之液浸區域。藉此,液體供應機構10與液體回收機構20之流路分別流經純水,以該純水將此等流路洗淨。又,藉由純水之液浸區域也可將第1光學元件LS1之下面LSA、嘴構件70之下面70A予以洗淨。In the order of the cleaning process using the functional liquid LK, after supplying the functional liquid LK from the functional liquid supply device 120, the supply and recovery operation of the functional liquid LK for a predetermined period of time is continued in the same order as in the immersion exposure operation. The image side of the projection optical system PL forms a liquid immersion area of the functional liquid LK. Further, the flow path of the liquid supply mechanism 10 and the liquid recovery mechanism 20 may be passed after the functional liquid LK is heated. Then, after a predetermined period of time, the supply and recovery operation of the functional liquid LK is stopped. In this state, the functional liquid LK is held on the image plane side of the projection optical system PL, and is in an immersed state. Then, after the immersed state is maintained for a predetermined period of time, the control device CONT performs the pure water supply and recovery operation for a predetermined period of time by the liquid supply mechanism 10 and the liquid recovery mechanism 20, and forms a pure water immersion area on the image side of the projection optical system PL. . Thereby, the flow paths of the liquid supply mechanism 10 and the liquid recovery mechanism 20 respectively flow through the pure water, and the pure water is used to wash the flow paths. Further, the lower surface LSA of the first optical element LS1 and the lower surface 70A of the nozzle member 70 can be washed by the liquid immersion area of pure water.

又,洗淨處理完成後,控制裝置CONT使用液浸機構1將投影光學系統PL與測量載台ST2之既定區域100之間以液體LQ充滿,使用測量裝置60來測量該液體LQ,藉此可確認洗淨處理是否良好地進行、亦即液體LQ是否處於所需狀態。Further, after the cleaning process is completed, the control device CONT fills the projection optical system PL and the predetermined region 100 of the measurement stage ST2 with the liquid LQ using the liquid immersion mechanism 1, and the measurement device 60 measures the liquid LQ. It is confirmed whether or not the washing process is performed satisfactorily, that is, whether the liquid LQ is in a desired state.

功能液LK以不會對前述各構件造成影響之材料來形成為佳。於本實施形態中,在功能液LK方面使用過氧化氫水。又,就前述各構件當中以對功能液LK無耐受性之材料所形成之構件而言,只要於利用功能液LK進行洗淨處理之前將該構件移除即可。The functional liquid LK is preferably formed of a material that does not affect the aforementioned members. In the present embodiment, hydrogen peroxide water is used for the functional liquid LK. Further, among the members described above, the member formed of the material having no resistance to the functional liquid LK may be removed before the cleaning treatment with the functional liquid LK.

於本實施形態中,雖說明了依據測量裝置60之測量結果來控制包含功能液供應裝置120之液體供應機構10的動作而進行洗淨處理之情況,惟當然可例如採行每隔既定時間間隔(例如每個月、每1年)進行洗淨處理之構成。又,會污染與液體LQ接觸之上述構件(嘴構件70、第1光學元件LS1等)之污染源不僅是受污染之液體LQ或是來自基板P之溶出物質,例如於空中浮游之雜質附著到前述構件也有可能污染前述構件。即使是此種情況,只要不論測量裝置60之測量結果為何均每隔既定時間間隔進行洗淨處理,即可防止構件之污染甚至可防止與構件接觸之液體LQ的污染。In the present embodiment, the case where the cleaning operation is performed by controlling the operation of the liquid supply mechanism 10 including the functional liquid supply device 120 in accordance with the measurement result of the measuring device 60 has been described, but it is of course possible to adopt, for example, every predetermined time interval. (For example, every month, every one year), the composition of the washing process is performed. Further, the contamination source of the above-mentioned member (the nozzle member 70, the first optical element LS1, and the like) which is in contact with the liquid LQ is contaminated not only by the contaminated liquid LQ or the eluted substance from the substrate P, for example, impurities floating in the air adhere to the foregoing. It is also possible for the component to contaminate the aforementioned components. Even in such a case, contamination of the member can be prevented or even contamination of the liquid LQ in contact with the member can be prevented as long as the cleaning process is performed every predetermined time interval regardless of the measurement result of the measuring device 60.

又,於上述第1實施形態中,亦可省略於基板P上形成液浸區域時之水質測量。亦即,可省略圖6之流程圖中之步驟SA9~SA11、SA16與SA17。Further, in the first embodiment described above, the water quality measurement when the liquid immersion area is formed on the substrate P may be omitted. That is, steps SA9 to SA11, SA16, and SA17 in the flowchart of FIG. 6 can be omitted.

<第2實施形態><Second embodiment>

其次,說明第2實施形態。於以下之說明中,針對與上述第1實施形態為相同或同等之構成部分係賦予同樣符號而簡略其說明或省略其說明。Next, a second embodiment will be described. In the following description, the same or equivalent components as those in the above-described first embodiment are denoted by the same reference numerals, and their description will be omitted or omitted.

於上述第1實施形態中,將投影光學系統PL與測量載台ST2之既定區域100之間以液體LQ充滿,在該狀態下測量液體LQ之水質(步驟SA2),依據該測量結果,當判斷無液體LQ之水質異常的情況下(步驟SA3),使用光測量器300、400、500、600中至少一者進行測量動作。於本實施形態中,如圖10所示般,控制裝置CONT係在投影光學系統PL與測量載台ST2上之光測量器(此處所舉之例為感測器400)之間充滿著液體LQ之狀態下,以感測器400進行測量動作,使得感測器400之測量動作與測量裝置60之水質測量動作的至少一部分並行。亦即,控制裝置CONT係在使得投影光學系統PL與於測量載台ST2所搭載之感測器400之上面401對向之狀態下,以液浸機構1進行液體LQ之供應與回收。藉此,於投影光學系統PL與感測器400之間的光路空間K1為液體LQ所充滿,感測器400可透過液體LQ進行測量處理,且測量裝置60可對於以液體回收機構20所回收之液體LQ之水質進行測量處理。如上述般,於感測器400之上面401係被覆著例如「賽脫普(註冊商標)」,係以不致污染液體LQ的方式所形成。是以,測量裝置60可對污染受到抑制之液體LQ進行測量。又此處係以感測器400之測量動作與測量裝置60之測量動作並行的情況為例做說明,惟當然亦可使得基準構件300、感測器500、600之測量動作與測量裝置60之測量動作並行。In the first embodiment, the projection optical system PL and the predetermined region 100 of the measurement stage ST2 are filled with the liquid LQ, and the water quality of the liquid LQ is measured in this state (step SA2), and based on the measurement result, it is judged. When the water quality of the liquid-free LQ is abnormal (step SA3), at least one of the light measuring devices 300, 400, 500, and 600 is used for the measurement operation. In the present embodiment, as shown in FIG. 10, the control unit CONT is filled with the liquid LQ between the projection optical system PL and the optical measuring device on the measuring stage ST2 (exemplified here as the sensor 400). In the state, the measurement operation is performed by the sensor 400 such that the measurement operation of the sensor 400 is parallel to at least a portion of the water quality measurement operation of the measurement device 60. That is, the control device CONT supplies and collects the liquid LQ by the liquid immersion mechanism 1 in a state where the projection optical system PL is opposed to the upper surface 401 of the sensor 400 mounted on the measurement stage ST2. Thereby, the optical path space K1 between the projection optical system PL and the sensor 400 is filled with the liquid LQ, the sensor 400 can perform measurement processing through the liquid LQ, and the measuring device 60 can be recovered by the liquid recovery mechanism 20. The water quality of the liquid LQ is measured. As described above, the upper surface 401 of the sensor 400 is covered with, for example, "Saipu (registered trademark)", and is formed so as not to contaminate the liquid LQ. Therefore, the measuring device 60 can measure the liquid LQ whose pollution is suppressed. Here, the case where the measurement operation of the sensor 400 and the measurement operation of the measuring device 60 are parallel is taken as an example, but of course, the measurement action of the reference member 300, the sensors 500, 600, and the measuring device 60 can also be made. Measurement actions are parallel.

如上述般,藉由使得光測量器透過液體LQ之測量動作與測量裝置60之水質測量動作並行,可縮短使用測量載台ST2之測量處理時間,可謀求產量提升。As described above, by performing the measurement operation of the light measuring device through the liquid LQ in parallel with the water quality measuring operation of the measuring device 60, the measurement processing time using the measuring stage ST2 can be shortened, and the yield can be improved.

<第3實施形態><Third embodiment>

其次,針對第3實施形態做說明。於上述之實施形態中,在使用測量裝置60來測量液體LQ之水質時,控制裝置CONT係在使得投影光學系統PL與測量載台ST2對向之狀態下,以液浸機構1進行液體LQ之供應與回收,但亦可如圖11所示般,在使得投影光學系統PL與於基板載台ST1所保持之虛置基板DP對向之狀態下,以液浸機構1進行液體LQ之供應與回收,以測量裝置60來測量與虛置基板DP接觸之液體LQ。虛置基板DP與用以製造元件之基板P為不同之構件,具有與基板P大致相同之大小與形狀。此外,虛置基板DP之上面當中至少與液體LQ接觸之區域係以不致污染液體LQ的方式形成。於本實施形態中,於虛置基板DP之上面係與第1實施形態同樣被施以PFA處理。藉此,測量裝置60可在不受到於投影光學系統PL像面側所配置之物體(此時為虛置基板DP)之影響的前提下精確地測量液體LQ之水質。Next, the third embodiment will be described. In the above embodiment, when the water quality of the liquid LQ is measured using the measuring device 60, the control device CONT performs the liquid LQ with the liquid immersion mechanism 1 in a state where the projection optical system PL and the measurement stage ST2 are opposed to each other. Supply and recovery, but as shown in FIG. 11, in the state where the projection optical system PL is opposed to the dummy substrate DP held by the substrate stage ST1, the liquid immersion mechanism 1 supplies the liquid LQ and For recycling, the measuring device 60 measures the liquid LQ in contact with the dummy substrate DP. The dummy substrate DP is a member different from the substrate P for manufacturing the element, and has substantially the same size and shape as the substrate P. Further, at least the region in contact with the liquid LQ among the upper surfaces of the dummy substrate DP is formed so as not to contaminate the liquid LQ. In the present embodiment, the PFA process is applied to the upper surface of the dummy substrate DP in the same manner as in the first embodiment. Thereby, the measuring device 60 can accurately measure the water quality of the liquid LQ without being affected by the object disposed on the image plane side of the projection optical system PL (in this case, the dummy substrate DP).

或者,亦可將基板載台ST1之上面95的部分區域(或全部區域)例如以PFA處理而以不污染液體LQ的方式形成,使用測量裝置60來測量液體LQ之水質時,在使得投影光學系統PL與基板載台ST1之上面95對向之狀態下,以液浸機構1進行液體LQ之供應與回收,並以測量裝置60來測量水質。Alternatively, a partial region (or all regions) of the upper surface 95 of the substrate stage ST1 may be formed by, for example, PFA treatment so as not to contaminate the liquid LQ, and when the measuring device 60 is used to measure the water quality of the liquid LQ, the projection optics is made. The system PL is supplied and recovered by the liquid immersion mechanism 1 in a state in which the system PL is opposed to the upper surface 95 of the substrate stage ST1, and the water quality is measured by the measuring device 60.

或者,亦可在使得基板載台ST1以及測量載台ST2以外之既定構件與投影光學系統PL對向之狀態下,以液浸機構1進行液體LQ之供應與回收,並以測量裝置60來測量水質。此時,此既定構件具有以不致污染液體LQ的方式所形成之既定區域。又,此既定構件亦可於投影光學系統PL之像面側,以包含致動器之驅動裝置來移動自如地設置。Alternatively, the liquid immersion mechanism 1 may supply and recover the liquid LQ in a state in which the predetermined member other than the substrate stage ST1 and the measurement stage ST2 and the projection optical system PL are opposed to each other, and may be measured by the measuring device 60. Water quality. At this time, the predetermined member has a predetermined region formed in such a manner that the liquid LQ is not contaminated. Further, the predetermined member may be movably provided on the image plane side of the projection optical system PL by a driving device including an actuator.

又,測量裝置60亦可設置於測量載台ST2。此時,測量裝置60具備於測量載台ST2所埋設之測量器(TOC計、粒子計數器等)以及於測量載台ST2上面97所設置之取樣口(孔)。以測量器來測量液體LQ時,於投影光學系統PL像面側形成液體LQ之液浸區域LR,使得液浸區域LR與測量載台ST2做相對移動,將液浸區域LR配置於取樣口上,使得液體LQ流入取樣口中。測量器對於透過取樣口所取得之液體LQ進行測量。此處,於測量載台ST2之上面97係施行PFA處理,係以不致污染液體LQ的方式來形成。即使是此種構成,測量裝置60也可精確地測量液體LQ之水質。同樣地,測量裝置60亦可設置於基板載台ST1。Further, the measuring device 60 may be provided on the measurement stage ST2. At this time, the measuring device 60 includes a measuring device (TOC meter, particle counter, etc.) embedded in the measuring stage ST2 and a sampling port (hole) provided on the upper surface 97 of the measuring stage ST2. When the liquid LQ is measured by the measuring device, the liquid immersion area LR of the liquid LQ is formed on the image side of the projection optical system PL, so that the liquid immersion area LR moves relative to the measurement stage ST2, and the liquid immersion area LR is disposed on the sampling port. The liquid LQ is caused to flow into the sampling port. The meter measures the liquid LQ obtained through the sampling port. Here, the PFA process is performed on the upper surface 97 of the measurement stage ST2, and is formed so as not to contaminate the liquid LQ. Even with such a configuration, the measuring device 60 can accurately measure the water quality of the liquid LQ. Similarly, the measuring device 60 may be provided on the substrate stage ST1.

<第4實施形態><Fourth embodiment>

其次,針對第4實施形態參照圖12來說明。本實施形態之特徵部分在於測量裝置60(60A、60B)係分別於液浸機構1之流路當中複數(此處為兩處)測量位置來測量液體LQ之水質。Next, the fourth embodiment will be described with reference to Fig. 12 . The feature of this embodiment is that the measuring device 60 (60A, 60B) measures the water quality of the liquid LQ by measuring a plurality of (here, two) measuring positions in the flow path of the liquid immersion mechanism 1.

於圖12中,液浸機構1係具備用以供應液體LQ之供應管13、以及用以回收液體LQ之回收管23。又,測量裝置60係具備用以對供應管13之既定位置(第1位置)C1之液體LQ的水質進行測量之第1測量裝置60A、以及用以對回收管23之既定位置(第2位置)C2之液體LQ的水質進行測量之第2測量裝置60B。第1、第2測量裝置60A、60B具有與參照圖5所說明之第1實施形態之測量裝置60為大致同等之構成。測量裝置60係使用第1、第2測量裝置60A、60B來分別對構成液浸機構1之流路當中第1位置C1與第2位置C2之液體LQ的水質進行測量。第1、第2測量裝置60A、60B之測量結果係輸出至控制裝置CONT。In Fig. 12, the liquid immersion mechanism 1 is provided with a supply pipe 13 for supplying the liquid LQ, and a recovery pipe 23 for recovering the liquid LQ. Further, the measuring device 60 includes a first measuring device 60A for measuring the water quality of the liquid LQ at a predetermined position (first position) C1 of the supply pipe 13, and a predetermined position (second position) for the recovery pipe 23. The second measuring device 60B that measures the water quality of the liquid LQ of C2. The first and second measuring devices 60A and 60B have substantially the same configuration as the measuring device 60 of the first embodiment described with reference to Fig. 5 . The measuring device 60 measures the water quality of the liquid LQ at the first position C1 and the second position C2 among the flow paths constituting the liquid immersion mechanism 1 by using the first and second measuring devices 60A and 60B, respectively. The measurement results of the first and second measuring devices 60A, 60B are output to the control device CONT.

控制裝置CONT可依據第1測量裝置60A之測量結果(亦即第1位置C1之液體LQ的水質測量結果)與第2測量裝置60B之測量結果(亦即第2位置C2之液體LQ的水質測量結果),求出構成液浸機構1當中位於第1位置C1與第2位置C2之間的流路狀態。於本實施形態中,在構成液浸機構1之流路當中之第1位置C1與第2位置C2之間係設有嘴構件70。是以,控制裝置CONT可依據第1、第2測量裝置60A、60B之測量結果,來求出嘴構件70之狀態。具體而言,控制裝置CONT可依據第1、第2測量裝置60A、60B之測量結果,來求出包含嘴構件70之在第1位置C1與第2位置C2之間的流路之污染狀態。The control device CONT can measure the water quality of the liquid LQ according to the measurement result of the first measuring device 60A (that is, the water quality measurement result of the liquid LQ at the first position C1) and the second measuring device 60B (that is, the liquid LQ at the second position C2). As a result, the state of the flow path between the first position C1 and the second position C2 among the liquid immersion mechanisms 1 is obtained. In the present embodiment, the nozzle member 70 is provided between the first position C1 and the second position C2 among the flow paths constituting the liquid immersion mechanism 1. Therefore, the control unit CONT can determine the state of the nozzle member 70 based on the measurement results of the first and second measuring devices 60A and 60B. Specifically, the control device CONT can obtain the contamination state of the flow path including the nozzle member 70 between the first position C1 and the second position C2 based on the measurement results of the first and second measurement devices 60A and 60B.

控制裝置CONT在使用第1、第2測量裝置60A、60B來求出在第1位置C1與第2位置C2之間的流路之污染狀態時,係在使得投影光學系統PL之下面LSA(嘴構件70之下面70A)與測量載台ST2之上面97之既定區域100處於對向之狀態下,以液浸機構1進行液體LQ之供應與回收,將投影光學系統PL與既定區域100之間以液體LQ充滿。藉此,測量裝置60(第2測量裝置60B)不會受到投影光學系統PL像面側所配置之物體的影響,可測量液體LQ之水質,並可精確地測量在第1位置C1與第2位置C2之間的流路狀態。When the control device CONT obtains the contamination state of the flow path between the first position C1 and the second position C2 by using the first and second measurement devices 60A and 60B, the control unit CONT is such that the lower side of the projection optical system PL LSA (mouth) The lower surface 70A) of the member 70 is in a state of being opposed to the predetermined region 100 of the upper surface 97 of the measurement stage ST2, and the liquid immersion mechanism 1 supplies and recovers the liquid LQ, and the projection optical system PL and the predetermined region 100 are The liquid LQ is full. Thereby, the measuring device 60 (the second measuring device 60B) is not affected by the object disposed on the image plane side of the projection optical system PL, and can measure the water quality of the liquid LQ, and can accurately measure the first position C1 and the second position. The state of the flow between positions C2.

當在第1位置C1與第2位置C2之間的流路受到污染的情況下,由於在第1測量裝置60A之測量結果與第2測量裝置60B之測量結果上出現差異,控制裝置CONT可依據第1、第2測量裝置60A、60B之測量結果來求出包含嘴構件70之在第1位置C1與第2位置C2之間的流路污染狀態。當在第1位置C1與第2位置C2之間的流路受到污染的情況,例如於回收管23之內側或嘴構件70之回收流路(內部流路)之內側存在著有機物的情況,相較於第1測量裝置60A之TOC計的測量值,第2測量裝置60B之TOC計的測量值會變大。是以,控制裝置CONT可依據第1、第2測量裝置60A、60B之測量結果來求出於第1位置C1與第2位置C2之間的流路之污染狀態。When the flow path between the first position C1 and the second position C2 is contaminated, the control device CONT can be based on the difference between the measurement result of the first measuring device 60A and the measurement result of the second measuring device 60B. The flow path contamination state between the first position C1 and the second position C2 including the nozzle member 70 is obtained from the measurement results of the first and second measuring devices 60A and 60B. When the flow path between the first position C1 and the second position C2 is contaminated, for example, an organic substance is present inside the recovery pipe 23 or inside the recovery flow path (internal flow path) of the nozzle member 70. The measured value of the TOC meter of the second measuring device 60B becomes larger than the measured value of the TOC meter of the first measuring device 60A. Therefore, the control unit CONT can determine the contamination state of the flow path between the first position C1 and the second position C2 based on the measurement results of the first and second measurement devices 60A and 60B.

於第1位置C1與第2位置C2之間配置有嘴構件70(具有用以對光路空間K1供應液體LQ之供應口12以及用以將光路空間K1之液體LQ加以回收之回收口22),一旦於第1位置C1與第2位置C2之間的流路受到污染,液體LQ會因為通過該流路而受到污染,被污染之液體LQ會充滿於光路空間K1。A nozzle member 70 (a supply port 12 for supplying the liquid LQ to the optical path space K1 and a recovery port 22 for recovering the liquid LQ of the optical path space K1) is disposed between the first position C1 and the second position C2, When the flow path between the first position C1 and the second position C2 is contaminated, the liquid LQ is contaminated by the flow path, and the contaminated liquid LQ is filled in the optical path space K1.

是以,控制裝置CONT依據測量裝置60之測量結果,來判斷對構成液浸機構1之流路當中、尤其是第1位置C1與第2位置C2之間的流路是否進行維修。具體而言,控制裝置CONT判定出測量裝置60之測量結果(第1測量裝置60A之測量值與第2測量裝置60B之測量值之差)是否有異常,依據該判定結果來判斷是否進行維修。Therefore, the control unit CONT determines whether or not the flow path between the flow path constituting the liquid immersion mechanism 1, in particular, between the first position C1 and the second position C2, is repaired based on the measurement result of the measuring device 60. Specifically, the control device CONT determines whether or not there is an abnormality in the measurement result of the measurement device 60 (the difference between the measured value of the first measuring device 60A and the measured value of the second measuring device 60B), and determines whether or not to perform maintenance based on the determination result.

此處,所謂測量裝置60之測量結果出現異常,包含下述情形:第1測量裝置60A之測量值與第2測量裝置60B之測量值之差成為事先設定之容許值以上,液體LQ因流經第1位置C1與第2位置C2之間的流路造成本身狀態(水質)不再為所需狀態,該液體LQ充滿於光路空間K1之際,透過液體LQ之曝光處理與測量處理無法在所需狀態下進行之狀況。關於此容許值之資訊,可藉由例如實驗或是模擬來事先求出。Here, the measurement result of the measuring device 60 is abnormal, and the difference between the measured value of the first measuring device 60A and the measured value of the second measuring device 60B is equal to or greater than the allowable value set in advance, and the liquid LQ flows through The flow path between the first position C1 and the second position C2 causes the state (water quality) to be no longer in a desired state. When the liquid LQ is filled in the optical path space K1, the exposure processing and measurement processing of the liquid LQ cannot be performed. The condition to be carried out in the state of need. Information about this allowable value can be obtained in advance by, for example, experiment or simulation.

如上所述,嘴構件70由於與含有自基板P溶出之溶出物質的液體LQ接觸,故容易被污染。若對嘴構件70之污染置之不理,即使對光路空間K1供應潔淨之液體LQ,也會因為與受污染之嘴構件70等接觸,造成被供應之液體LQ受到污染。於本實施形態中,藉由在第1位置C1與第2位置C2之間配置嘴構件70,控制裝置CONT可依據第1、第2測量裝置60A、60B之測量結果來精確地求出嘴構件70之污染狀態。再者,當嘴構件70受到污染之情形,藉由採行適當的措施來將嘴構件70潔淨化,可將在光路空間K1所充滿之液體LQ維持於所需狀態。As described above, the nozzle member 70 is easily contaminated by contact with the liquid LQ containing the eluted substance eluted from the substrate P. If the contamination of the nozzle member 70 is ignored, even if the clean liquid LQ is supplied to the optical path space K1, the supplied liquid LQ is contaminated by contact with the contaminated nozzle member 70 or the like. In the present embodiment, by arranging the nozzle member 70 between the first position C1 and the second position C2, the control unit CONT can accurately determine the nozzle member based on the measurement results of the first and second measuring devices 60A and 60B. 70 pollution status. Further, when the nozzle member 70 is contaminated, the nozzle member 70 can be cleaned by appropriate measures to maintain the liquid LQ filled in the optical path space K1 in a desired state.

控制裝置CONT依據測量裝置60(第1、第2測量裝置60A、60B)之測量結果、亦即依據對測量裝置60之測量結果(第1測量裝置60A之測量值與第2測量裝置60B之測量值之差)是否為異常進行判定時之判定結果,來判斷是否進行維修。當判斷應進行第1位置C1與第2位置C2之間的流路維修時,乃進行既定之維修作業。在維修作業方面,可舉出與第1實施形態同樣,使得功能液供應裝置120所供應之具有洗淨功能之功能液LK流經液浸機構1之流路(包含位於第1位置C1與第2位置C2之間的流路),將該流路加以洗淨之作業。或者在維修作業方面,尚可舉出將嘴構件70與供應管13以及回收管23加以分離,亦即將嘴構件70自曝光裝置EX卸除,以有別於曝光裝置EX之其他既定洗淨裝置來將嘴構件70加以洗淨之作業。或者在維修作業方面,尚可舉出將嘴構件70更換為新的(潔淨的)構件之作業、以操作員進行之洗淨作業等。The control device CONT is based on the measurement result of the measuring device 60 (the first and second measuring devices 60A, 60B), that is, the measurement result of the measuring device 60 (the measured value of the first measuring device 60A and the second measuring device 60B) The difference between the values is determined as to whether or not the result of the determination is abnormal. When it is judged that the flow path maintenance between the first position C1 and the second position C2 is to be performed, a predetermined maintenance work is performed. In the same manner as in the first embodiment, the functional liquid LK having the cleaning function supplied from the functional liquid supply device 120 flows through the flow path of the liquid immersion mechanism 1 (including the first position C1 and the first The flow path between the two positions C2) is used to clean the flow path. Alternatively, in terms of maintenance work, it is also possible to separate the nozzle member 70 from the supply tube 13 and the recovery tube 23, that is, to remove the nozzle member 70 from the exposure device EX to distinguish it from other predetermined cleaning devices of the exposure device EX. The operation of washing the mouth member 70. Alternatively, in the maintenance work, an operation of replacing the nozzle member 70 with a new (clean) member, a washing operation by an operator, or the like may be mentioned.

又,於維修作業進行之後,控制裝置CONT可利用液浸機構1進行液體LQ之供應與回收,測量第1、第2位置C1、C2之液體LQ的水質,確認包含嘴構件70之流路是否潔淨。Further, after the maintenance work is performed, the control device CONT can supply and collect the liquid LQ by the liquid immersion mechanism 1, and measure the water quality of the liquid LQ at the first and second positions C1 and C2, and check whether or not the flow path including the nozzle member 70 is included. Clean.

於本實施形態中,係對於包含嘴構件70之在第1位置C1與第2位置C2之間的流路狀態進行測量,惟當然可對液浸機構1之流路當中不含嘴構件70之任意測量位置彼此間的流路狀態進行測量。例如,藉由將供應管13當中之與液體供應部11連接位置附近當做第1位置C1、將與嘴構件70連接位置附近當做第2位置C2,可求出供應管13之狀態。此外可依據測量裝置之測量結果,例如對供應管13流經功能液LK、或將供應管13自曝光裝置EX卸除以洗淨裝置來進行洗淨、或是將供應管13更換為新的(潔淨的)管件,採取諸如此等措施。In the present embodiment, the state of the flow path between the first position C1 and the second position C2 including the nozzle member 70 is measured, but it is of course possible to exclude the nozzle member 70 from the flow path of the liquid immersion mechanism 1. The flow path state between any measurement positions is measured. For example, the state of the supply pipe 13 can be obtained by considering the vicinity of the connection position with the liquid supply portion 11 in the supply pipe 13 as the first position C1 and the vicinity of the position at which the nozzle member 70 is connected as the second position C2. Further, depending on the measurement result of the measuring device, for example, the supply pipe 13 flows through the functional liquid LK, or the supply pipe 13 is removed from the exposure device EX to be cleaned by the cleaning device, or the supply pipe 13 is replaced with a new one. (Clean) pipe fittings, such measures are taken.

又,於本實施形態中,測量裝置60係對於液浸機構1之流路當中之第1、第2位置C1、C2這兩個部位的液體LQ水質進行測量,惟當然可對液浸機構1之流路當中3個部位以上之任意複數位置之液體LQ水質進行測量。此時,於液浸機構1之流路之複數既定位置設定測量裝置,控制裝置CONT可依據關於該等複數測量位置之個別液體LQ水質的測量結果,來求出各測量位置彼此間之流路狀態。Further, in the present embodiment, the measuring device 60 measures the liquid LQ water quality at the first and second positions C1 and C2 among the flow paths of the liquid immersion mechanism 1, but it is of course possible to apply the liquid immersion mechanism 1 The liquid LQ water quality at any of the three positions above the flow path is measured. At this time, the measuring device is set at a plurality of predetermined positions of the flow path of the liquid immersion mechanism 1, and the control device CONT can determine the flow paths between the respective measurement positions according to the measurement results of the individual liquid LQ water quality with respect to the plurality of measurement positions. status.

如上述般,控制裝置CONT可使用測量裝置60來對於液浸機構1之流路當中沿著液體LQ流動方向之複數測量位置之液體LQ水質進行測量,依據各測量位置之水質測量結果,來求出各測量位置彼此間之流路狀態。藉此,可特定出構成液浸機構1之流路當中是何處位置液體LQ水質發生變化,可輕易地釐清變化的原因。又控制裝置CONT可依據各測量裝置之測量結果,特定出在何處區間發生異常。然後,將某區間發生異常之主旨以告知裝置INF來告知,藉此,可促使對該區間進行調查,以謀求儘早自該異常狀態恢復成為正常狀態。As described above, the control device CONT can use the measuring device 60 to measure the liquid LQ water quality at a plurality of measurement positions along the flow direction of the liquid LQ among the flow paths of the liquid immersion mechanism 1, and obtain the water quality measurement results according to the respective measurement positions. The state of the flow path between each measurement position. Thereby, it is possible to specify where the liquid LQ water quality changes in the flow path constituting the liquid immersion mechanism 1, and the cause of the change can be easily clarified. Further, the control unit CONT can specify an abnormality in the interval according to the measurement result of each measuring device. Then, the purpose of the abnormality in a certain section is notified by the notification device INF, whereby the section can be promptly investigated to seek to return to the normal state from the abnormal state as early as possible.

<其他實施形態><Other Embodiments>

又,上述第1~第4實施形態中之測量裝置60係常設於曝光裝置EX,惟亦可例如在曝光裝置EX之維修時或是事先設定之時刻將測量裝置60連接至曝光裝置EX(供應管13或是回收管23),對液體LQ之水質做定期或不定期之測量。Further, the measuring device 60 in the first to fourth embodiments is always attached to the exposure device EX, but the measuring device 60 may be connected to the exposure device EX, for example, at the time of maintenance of the exposure device EX or at a predetermined time. The tube 13 or the recovery tube 23) measures the water quality of the liquid LQ periodically or irregularly.

於上述第1~第4實施形態中,測量裝置60具有複數之測量器(61、62、63、64),透過複數分支管之個別管件與回收管23(或是供應管13)連接,惟亦可例如於回收管23(或是供應管13)設置一分支管(分支部),對該兩個分支部一邊更換複數之測量器(61、62、63、64)一邊依序連接,進行液體LQ之水質測量。又,於上述第2實施形態中,第1測量裝置60A係透過分支管來與供應管13連接,第2測量裝置60B係透過分支管來與回收管23連接,惟亦可讓一個測量裝置來和供應管13之第1位置C1以及回收管23之第2位置C2做連接,使用閥等來切換流路,藉此,於測量第1位置C1(第2位置C2)之液體LQ水質之後,再測量第2位置C2(第1位置C1)之液體LQ水質。In the first to fourth embodiments, the measuring device 60 has a plurality of measuring devices (61, 62, 63, 64), and the individual tubes passing through the plurality of branch pipes are connected to the collecting pipe 23 (or the supply pipe 13). For example, a branch pipe (branch portion) may be provided in the recovery pipe 23 (or the supply pipe 13), and the two branch portions may be sequentially connected while replacing the plurality of measuring devices (61, 62, 63, 64). Water quality measurement of liquid LQ. Further, in the second embodiment, the first measuring device 60A is connected to the supply pipe 13 through the branch pipe, and the second measuring device 60B is connected to the recovery pipe 23 via the branch pipe, but it is also possible to have one measuring device. The first position C1 of the supply pipe 13 and the second position C2 of the recovery pipe 23 are connected, and the flow path is switched by using a valve or the like, thereby measuring the liquid LQ water quality at the first position C1 (second position C2). The liquid LQ water quality at the second position C2 (first position C1) is measured.

<其他實施形態><Other Embodiments>

又,上述第1~第4實施形態中測量裝置60係常設於曝光裝置EX,惟亦可在例如曝光裝置EX之維修時或是事先設定之時刻,將測量裝置60連接於曝光裝置EX(供應管13或回收管23),定期或不定期進行液體LQ之水質測量。Further, in the first to fourth embodiments, the measuring device 60 is always attached to the exposure device EX, but the measuring device 60 may be connected to the exposure device EX at the time of maintenance of the exposure device EX or at a predetermined time. The tube 13 or the recovery tube 23) performs the water quality measurement of the liquid LQ periodically or irregularly.

上述第1~第4實施形態中,測量裝置60具有複數之測量器(61、62、63、64),透過複數分支管之個別的分支管來與回收管23(或是供應管13)連接著,惟亦可例如於回收管23(或是供應管13)設置一分支管(分支部),對該兩個分支部一邊更換複數之測量器(61、62、63、64)一邊依序連接,進行液體LQ之水質測量。又,於上述第2實施形態中,第1測量裝置60A係透過分支管來與供應管13連接,第2測量裝置60B係透過分支管來與回收管23連接,惟亦可讓一個測量裝置來和供應管13之第1位置C1以及回收管23之第2位置C2做連接,使用閥等來切換流路,藉此,於測量第1位置C1(第2位置C2)之液體LQ水質之後,再測量第2位置C2(第1位置C1)之液體LQ水質。In the first to fourth embodiments described above, the measuring device 60 has a plurality of measuring devices (61, 62, 63, 64) connected to the collecting pipe 23 (or the supply pipe 13) through individual branch pipes of the plurality of branch pipes. Alternatively, for example, a branch pipe (branch portion) may be provided in the recovery pipe 23 (or the supply pipe 13), and the plurality of measuring devices (61, 62, 63, 64) may be replaced while the two branch portions are replaced. Connect to perform water quality measurement of liquid LQ. Further, in the second embodiment, the first measuring device 60A is connected to the supply pipe 13 through the branch pipe, and the second measuring device 60B is connected to the recovery pipe 23 via the branch pipe, but it is also possible to have one measuring device. The first position C1 of the supply pipe 13 and the second position C2 of the recovery pipe 23 are connected, and the flow path is switched by using a valve or the like, thereby measuring the liquid LQ water quality at the first position C1 (second position C2). The liquid LQ water quality at the second position C2 (first position C1) is measured.

上述第1~第4實施形態中,當欲對於液體LQ中之生菌成分進行測量的情況,亦可對所供應之液體LQ在既定之時刻做取樣,使用與曝光裝置EX分開設置之測量裝置(分析裝置),來對液體LQ進行測量(分析)。又,即使是測量微粒子、氣泡、溶氧等之情況,亦可不採取線上模式,改對液體LQ在既定之時刻做取樣,使用與曝光裝置EX分開設置之測量裝置來進行測量。或者,亦可例如事先於分支管61K~64K設置閥,藉由對閥進行操作來使得流經供應管13之液體LQ在既定之時刻流入測量裝置60,而對液體LQ做間歇性測量。另一方面,若流經供應管13之液體LQ常時性供應至測量裝置60來連續地測量,可謀求測量裝置60所進行測量之穩定化。In the above-described first to fourth embodiments, when the measurement of the growth component in the liquid LQ is desired, the supplied liquid LQ may be sampled at a predetermined timing, and the measurement device separately provided from the exposure device EX may be used. (Analytical device) to measure (analyze) the liquid LQ. Further, even in the case of measuring fine particles, bubbles, dissolved oxygen, or the like, the liquid LQ may be sampled at a predetermined timing without using the in-line mode, and measurement may be performed using a measuring device provided separately from the exposure device EX. Alternatively, for example, a valve may be provided in the branch pipes 61K to 64K in advance, and by operating the valve, the liquid LQ flowing through the supply pipe 13 flows into the measuring device 60 at a predetermined timing, and the liquid LQ is intermittently measured. On the other hand, if the liquid LQ flowing through the supply pipe 13 is constantly supplied to the measuring device 60 for continuous measurement, stabilization of the measurement by the measuring device 60 can be achieved.

於上述第1~第4實施形態中,分支管61K、62K、63K、64K係與位於液體回收部21與嘴構件70之間的回收管23連接,測量裝置60係對於自回收管23分支之液體LQ進行測量,此時,分支管儘可能設置於嘴構件70之附近(回收口22之附近)為佳。In the above-described first to fourth embodiments, the branch pipes 61K, 62K, 63K, and 64K are connected to the recovery pipe 23 located between the liquid recovery part 21 and the nozzle member 70, and the measuring device 60 is branched from the recovery pipe 23. The liquid LQ is measured. At this time, it is preferable that the branch pipe is disposed as close as possible to the nozzle member 70 (near the recovery port 22).

於上述第1~第4實施形態中,分支管61K、62K、63K、64K係具備對流經回收管23之液體LQ進行取樣之取樣口之功能,測量裝置60所測量之液體LQ係利用自嘴構件70與液體回收部21之間的回收管23中途所分支出之分支流路所取樣者,惟亦可於嘴構件70之例如回收口22附近安裝取樣口,以測量裝置60來對流經回收口22附近之液體LQ進行測量。In the above-described first to fourth embodiments, the branch pipes 61K, 62K, 63K, and 64K have a function of sampling the sampling port of the liquid LQ flowing through the recovery pipe 23, and the liquid LQ measured by the measuring device 60 is used in the nozzle. The sample flow path branched in the middle of the recovery pipe 23 between the member 70 and the liquid recovery unit 21 may be sampled, but a sampling port may be installed in the vicinity of the recovery port 22 of the nozzle member 70, for example, and the measuring device 60 may be used to collect the flow. The liquid LQ near the port 22 is measured.

如上述般,本實施形態中之液體LQ係使用純水。純水能輕易自半導體製造工廠等大量取得,且對於基板P上之光阻或光學元件(透鏡)等亦無不良影響,為其優點所在。又,純水對環境無不良影響,且雜質含量極低,故可期待對基板P表面以及在投影光學系統PL之前端面所設置之光學元件表面進行洗淨之作用。又當由工廠等所供應之純水的純度低之情況,可使得曝光裝置具備超純水製造器。As described above, the liquid LQ in the present embodiment uses pure water. Pure water can be easily obtained from a large number of semiconductor manufacturing plants, and has no adverse effect on the photoresist or the optical element (lens) on the substrate P, which is an advantage. Further, since pure water does not adversely affect the environment and the impurity content is extremely low, it is expected to wash the surface of the substrate P and the surface of the optical element provided on the end surface of the projection optical system PL. Further, when the purity of the pure water supplied by the factory or the like is low, the exposure apparatus can be provided with an ultrapure water maker.

再者,由於純水(水)對於波長193nm左右之曝光用光EL的折射率n為約1.44,當曝光用光EL之光源使用ArF準分子雷射光(波長193nm)之情況下,於基板P上可得到1/n、亦即被短波長化至約134nm之高解析度。再者,焦點深度相較於空氣中被擴大至約n倍(亦即約1.44倍),故於只需確保焦點深度與在空氣中使用之情況相同程度的狀況,可進一步增加投影光學系統PL之數值孔徑,此亦有助於解析度之提升。Further, since pure water (water) has a refractive index n of about 1.44 for the exposure light EL having a wavelength of about 193 nm, and when the light source for the exposure light EL uses ArF excimer laser light (wavelength: 193 nm), the substrate P is used. A high resolution of 1/n, that is, short wavelength to about 134 nm can be obtained. Furthermore, since the depth of focus is enlarged to about n times (i.e., about 1.44 times) in the air, the projection optical system PL can be further increased by ensuring that the depth of focus is the same as that in the air. The numerical aperture also contributes to the increase in resolution.

於本實施形態中,在投影光學系統PL之前端安裝有光學元件LS1,可藉由此透鏡來進行投影光學系統PL之光學特性、例如像差(球面像差、慧形像差)之調整。又,於投影光學系統PL之前端所安裝之光學元件,亦可為在投影光學系統PL之光學特性調整上所使用之光學板。或者亦可為可穿透曝光用光EL之平行平面板。In the present embodiment, the optical element LS1 is attached to the front end of the projection optical system PL, and the optical characteristics of the projection optical system PL, for example, aberration (spherical aberration, coma aberration) can be adjusted by the lens. Further, the optical element mounted on the front end of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL. Alternatively, it may be a parallel plane plate that can penetrate the exposure light EL.

又,因液體LQ之流動所產生之在投影光學系統PL前端之光學元件與基板P間的壓力大的情況,該光學元件亦可非可更換者而是以不因壓力而移動的方式堅固地固定著。Further, when the pressure between the optical element at the tip end of the projection optical system PL and the substrate P due to the flow of the liquid LQ is large, the optical element may be non-replaceable, but may be firmly moved without being pressed by pressure. Fixed.

又,於本實施形態中,雖採用於投影光學系統PL與基板P表面之間充滿液體LQ之構成,惟亦可例如於基板P之表面安裝著由平行平面板所構成之蓋玻璃的狀態下充滿液體LQ。Further, in the present embodiment, the liquid crystal LQ is filled between the projection optical system PL and the surface of the substrate P, but for example, a cover glass made of a parallel flat plate may be attached to the surface of the substrate P. Filled with liquid LQ.

又,於上述實施形態之投影光學系統,係將前端之光學元件像面側的光路空間以液體充滿,惟亦可採用國際公開第2004/019128號小冊所揭示般之於前端光學元件之光罩側的光路空間亦以液體充滿之投影光學系統。Further, in the projection optical system of the above-described embodiment, the optical path space on the image plane side of the optical element at the front end is filled with a liquid, but the light of the front end optical element as disclosed in the pamphlet of International Publication No. 2004/019128 may be used. The optical path space on the cover side is also a projection optical system filled with liquid.

又,於本實施形態之液體LQ為水,惟亦可為水以外之液體,例如,當曝光用光EL之光源為F2 雷射之情況,由於該F2 雷射光無法穿透水,故在液體LQ方面亦可為可穿透F2 雷射光之例如過氟聚醚(PFPE)或氟系油等氟系流體。此時,與液體LQ接觸之部分,係藉由例如含氟之極性低分子結構之物質來形成薄膜以進行親液化處理。又,在液體LQ方面尚可使用對曝光用光EL具穿透性且折射率儘可能高、對於在投影光學系統PL、基板P表面所塗佈之光阻呈穩定者(例如柏木油)。此時表面處理亦對應於所使用之液體LQ的極性來進行。Further, the liquid LQ in the present embodiment is water, but may be a liquid other than water. For example, when the light source of the exposure light EL is a F 2 laser, since the F 2 laser light cannot penetrate the water, the F 2 laser light cannot penetrate the water. The liquid LQ may be a fluorine-based fluid such as a perfluoropolyether (PFPE) or a fluorine-based oil that can penetrate the F 2 laser light. At this time, the portion in contact with the liquid LQ is formed into a film by a substance having a fluorine-containing polar low molecular structure to carry out a lyophilization treatment. Further, in the liquid LQ, it is possible to use a transmittance to the exposure light EL and to have a refractive index as high as possible, and to stabilize the photoresist applied to the projection optical system PL and the surface of the substrate P (for example, cedar oil). The surface treatment at this time also corresponds to the polarity of the liquid LQ used.

又,上述各實施形態之基板P不僅可使用半導體元件製造用之半導體晶圓,亦可使用顯示器元件用玻璃基板、薄膜磁頭用陶瓷晶圓、或是在曝光裝置所使用之光罩或光柵之原版(合成石英、矽晶圓)等。Further, in the substrate P of each of the above embodiments, not only a semiconductor wafer for semiconductor element fabrication but also a glass substrate for a display element, a ceramic wafer for a thin film magnetic head, or a photomask or a grating used in an exposure apparatus may be used. Original (synthetic quartz, germanium wafer), etc.

在曝光裝置EX方面,除了使得光罩M與基板P同步移動而對光罩M之圖案做掃描曝光之步進掃描方式之掃描型曝光裝置(掃描步進機)以外,尚可使用光罩M與基板P在靜止狀態下對光罩M之圖案做全面曝光,讓基板P依序步進移動之步進反覆方式之投影曝光裝置(步進機)。In the exposure apparatus EX, in addition to the scanning type exposure apparatus (scanning stepper) that scans the pattern of the mask M in synchronization with the mask M and the substrate P, the mask M can be used. A projection exposure apparatus (stepper) that repeatedly exposes the pattern of the mask M to the substrate P in a stationary state, and sequentially moves the substrate P in a step-and-step manner.

又,在曝光裝置EX方面,亦可使用第1圖案與基板P在大致靜止之狀態下以投影光學系統(例如縮小倍率1/8之不含反射元件的折射型投影光學系統)將第1圖案之縮小像在基板P上做全面曝光之方式的曝光裝置。此種情況下,可在之後進一步使用縫合方式之全面曝光裝置,在第2圖案與基板P處於大致靜止之狀態下,使用投影光學系統將第2圖案之縮小像與第1圖案做部分重疊並對基板P上進行全面曝光。又,做為縫合方式之曝光裝置,亦可使用步進縫合方式之曝光裝置,在基板P上使得至少兩個圖案部分重疊轉印,然後依序移動基板P。Further, in the exposure apparatus EX, the first pattern and the substrate P may be used to form the first pattern in a substantially stationary state with a projection optical system (for example, a refractive projection optical system that does not include a reflection element at a reduction magnification of 1/8). The exposure device is reduced in such a manner as to perform full exposure on the substrate P. In this case, the full-exposure device of the stitching method can be further used, and the reduced image of the second pattern and the first pattern are partially overlapped by the projection optical system while the second pattern and the substrate P are substantially stationary. A full exposure is performed on the substrate P. Further, as the exposure apparatus of the stitching method, an exposure apparatus of a stepping stitching method may be used, and at least two pattern portions are superimposed and transferred on the substrate P, and then the substrate P is sequentially moved.

於上述實施形態中,雖使用了於透光性基板上形成既定遮光圖案(或是相位圖案、減光圖案)之透光型光罩(光柵),惟亦可取代此光柵,改用如美國專利第6,778,257號公報所揭示般,依據待曝光之圖案的電子資料來形成穿透圖案或反射圖案或是發光圖案之電子光罩。In the above embodiment, a light-transmitting type mask (grating) in which a predetermined light-shielding pattern (or a phase pattern or a light-reducing pattern) is formed on a light-transmitting substrate is used, but it is also possible to replace the grating. As disclosed in Japanese Patent No. 6,778,257, an electronic mask that penetrates a pattern or a reflective pattern or a light-emitting pattern is formed in accordance with an electronic material of a pattern to be exposed.

又,本發明亦可使用如國際公開第2001-035168號小冊所揭示般,於晶圓W上形成干涉條紋,藉此於晶圓W上形成線與間隙圖案之曝光裝置(光微影系統)。Moreover, the present invention can also use an exposure device (photolithography system) for forming interference fringes on the wafer W as disclosed in the pamphlet of International Publication No. 2001-035168, thereby forming a line and gap pattern on the wafer W. ).

又,本發明亦可採用省略測量載台ST2而僅具備保持基板P之基板載台ST1的曝光裝置。此時,可將以不污染液體LQ之方式所形成之既定區域100設置於基板載台ST1上,亦可將上述虛置基板DP保持於基板載台ST1上,做為既定區域來使用。又,在上述實施形態中,係舉具備投影光學系統PL之曝光裝置為例來說明,惟本發明亦可採用不使用投影光學系統PL之曝光裝置與曝光方法。在不使用投影光學系統PL之情況下,曝光用光係透過透鏡等光學構件照射於基板,於該光學構件與基板之間的既定空間形成液浸區域。Further, in the present invention, an exposure apparatus including only the substrate stage ST1 holding the substrate P may be omitted, in which the measurement stage ST2 is omitted. In this case, the predetermined region 100 formed so as not to contaminate the liquid LQ may be placed on the substrate stage ST1, or the dummy substrate DP may be held on the substrate stage ST1 and used as a predetermined region. Further, in the above-described embodiment, an exposure apparatus including the projection optical system PL is described as an example, but the exposure apparatus and the exposure method which do not use the projection optical system PL may be used in the present invention. When the projection optical system PL is not used, the light for exposure is irradiated onto the substrate through an optical member such as a lens, and a liquid immersion area is formed in a predetermined space between the optical member and the substrate.

又,本發明亦可採用雙重載台(twin stage)型曝光裝置。在雙重載台型曝光裝置中,只要於保持基板之兩個載台當中至少一載台上面事先形成不會污染液體LQ之既定區域即可。雙重載台型曝光裝置之結構與曝光動作,係揭示於例如特開平10-163099號公報以及特開平10-214783號公報(對應美國專利6,341,007、6,400,441、6,549,269以及6,590634)、特表2000-505958號公報(對應美國專利5,969,441)或是美國專利6,208,407。Further, the present invention can also employ a twin stage type exposure apparatus. In the double stage type exposure apparatus, it is only necessary to form a predetermined area on the at least one of the two stages holding the substrate in advance so as not to contaminate the liquid LQ. The structure and the exposure operation of the double-stage type exposure apparatus are disclosed in, for example, Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei 10-214783 (corresponding to U.S. Patent Nos. 6,341,007, 6,400,441, 6,549,269 and 6,590,634). Japanese Patent No. 505958 (corresponding to U.S. Patent No. 5,969,441) or U.S. Patent No. 6,208,407.

又,於上述實施形態中,係採用在投影光學系統PL與基板P之間局部性充滿液體之曝光裝置,惟本發明亦可採用如特開平6-124873號公報、特開平10-303114號公報、美國專利第5,825,043號等所揭示般,在曝光對象之基板表面整體浸於液體中之狀態下進行曝光之液浸曝光裝置。Further, in the above-described embodiment, an exposure apparatus that partially fills the liquid between the projection optical system PL and the substrate P is used. However, the present invention can also be used in Japanese Laid-Open Patent Publication No. Hei 6-124873, No. Hei 10-303114. A liquid immersion exposure apparatus that performs exposure in a state where the entire surface of the substrate to be exposed is immersed in a liquid as disclosed in U.S. Patent No. 5,825,043.

曝光裝置EX之種類並不侷限於對基板P進行半導體元件圖案曝光之半導體元件製造用曝光裝置,亦可廣泛地使用液晶顯示元件製造用或是顯示器製造用之曝光裝置,以及用以製造薄膜磁頭、攝像元件(CCD)或是光柵、光罩等之曝光裝置等。The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element in which the substrate P is exposed to the substrate P, and an exposure apparatus for manufacturing a liquid crystal display element or a display can be widely used, and a thin film magnetic head can be manufactured. , an imaging device (CCD) or an exposure device such as a grating or a photomask.

當基板載台ST1、光罩載台MST使用線性馬達時,可使用採氣體軸承之氣浮型以及利用勞倫茲力或是電抗力之磁浮型任一者。又,各載台ST1、ST2、MST可為沿著導件移動之類型、亦可為不設置導件之無導件類型。關於載台採用線性馬達之例,揭示於美國專利5,623,853以及5,528,118。When the substrate stage ST1 and the mask stage MST use a linear motor, either an air floating type of a gas bearing or a magnetic floating type using a Lorentz force or a reactance force can be used. Further, each of the stages ST1, ST2, and MST may be of a type that moves along the guide member or a non-guide type that does not have a guide. An example of a linear motor for a stage is disclosed in U.S. Patent Nos. 5,623,853 and 5,528,118.

各載台ST1、ST2、MST之驅動機構亦可使用平面馬達,使得於二維空間配置著磁鐵之磁鐵單元與於二維空間配置著線圈之電樞單元對向而利用電磁力將各載台ST1、ST2、MST加以驅動。此時,只需將磁鐵單元與電樞單元之任一者來和載台ST1、ST2、MST連接,而將磁鐵單元與電樞單元之另一者設置於載台ST1、ST2、MST之移動面側即可。The driving mechanism of each of the stages ST1, ST2, and MST may be a planar motor, so that the magnet unit in which the magnet is disposed in a two-dimensional space faces the armature unit in which the coil is disposed in a two-dimensional space, and each stage is electromagnetically driven. ST1, ST2, and MST are driven. In this case, it is only necessary to connect any one of the magnet unit and the armature unit to the stages ST1, ST2, and MST, and to move the other of the magnet unit and the armature unit to the stages ST1, ST2, and MST. The side can be.

為了避免因載台ST1、ST2之移動所發生之反作用力傳遞至投影光學系統PL,亦可如特開平8-166475號公報(美國專利5,528,118)所記載般使用框構件以機械方式釋放到地上(大地)。In order to prevent the reaction force generated by the movement of the stages ST1, ST2 from being transmitted to the projection optical system PL, the frame member is mechanically released to the ground as described in Japanese Laid-Open Patent Publication No. Hei 8-166475 (U.S. Patent No. 5,528,118). Earth).

為了避免因光罩載台MST之移動所發生之反作用力傳遞至投影光學系統PL,亦可如特開平8-330224號公報(美國專利5,874,820)所記載般使用框構件以機械方式釋放到地上(大地)。In order to prevent the reaction force from being transmitted to the projection optical system PL by the movement of the reticle stage MST, the frame member is mechanically released to the ground as described in Japanese Laid-Open Patent Publication No. Hei 8-330224 (U.S. Patent No. 5,874,820). Earth).

如以上所述般,本案實施形態之曝光裝置EX,包含著於本案申請專利範圍所舉出各種構成要素的各種準系統係以維持既定之機械精度、電氣精度、光學精度的方式組裝而製造者。為了確保各種精度,於組裝之前後,針對各種光學系統係進行用以達成光學精度之調整,針對各種機械系統係進行用以達成機械精度之調整,針對各種電氣系統係進行用以達成電氣精度之調整。從各種準系統組裝成為曝光裝置之步驟,包含各種準系統相互之機械性連接、電氣電路之配線連接、氣壓迴路之配管連接等。從各種準系統組裝為曝光裝置之步驟前,當然有各準系統個別之組裝步驟。當從各種準系統組裝為曝光裝置之步驟結束後,進行總體調整,確保曝光裝置全體之各種精度。又,曝光裝置之製造以在溫度與潔淨度等受到管理之無塵室進行為佳。As described above, the exposure apparatus EX according to the embodiment of the present invention includes various quasi-systems in which various constituent elements are cited in the scope of the present application, and is assembled by maintaining the predetermined mechanical precision, electrical precision, and optical precision. . In order to ensure various precisions, adjustments for optical precision are performed for various optical systems before and after assembly, and adjustments for mechanical precision are performed for various mechanical systems, and electrical precision is achieved for various electrical systems. Adjustment. The steps of assembling the exposure device from various quasi-systems include mechanical connection of various quasi-systems, wiring connection of electric circuits, piping connection of pneumatic circuits, and the like. Before the steps of assembling the various quasi-systems into the exposure apparatus, of course, there are individual assembly steps of the respective quasi-systems. After the steps of assembling the various exposure systems into the exposure devices, the overall adjustment is performed to ensure various precisions of the entire exposure apparatus. Further, the production of the exposure apparatus is preferably carried out in a clean room in which temperature and cleanliness are managed.

半導體元件等微元件,如圖13所示,係透過下述步驟製造:進行微元件之功能、性能設計之步驟201;依據此設計步驟來製作光罩(光柵)之步驟202;製造元件基材之基板的步驟203;以前述實施形態之曝光裝置EX將光罩之圖案於基板上曝光,對曝光後之基板進行顯影之基板處理(曝光處理)的步驟204;元件組裝步驟(含切割步驟、結合步驟、封裝步驟)205;檢查步驟206等。又,基板處理步驟204中包含有與圖6等之圖式相關所說明之處理步驟。A micro-element such as a semiconductor element, as shown in FIG. 13, is manufactured by the following steps: a step 201 of performing a function and performance design of the micro-element; a step 202 of fabricating a photomask (grating) according to the design step; and manufacturing the element substrate Step 203 of the substrate; step 204 of exposing the pattern of the mask to the substrate by the exposure apparatus EX of the above embodiment, substrate processing (exposure processing) for developing the exposed substrate; component assembly step (including a cutting step, Combining step, packaging step) 205; checking step 206 and the like. Further, the substrate processing step 204 includes the processing steps described in relation to the drawings of FIG. 6 and the like.

1...液浸機構1. . . Liquid immersion mechanism

2...基材2. . . Substrate

2A...上面2A. . . Above

2As...周圍部2As. . . Surrounding part

2B...下面2B. . . below

2C...側面2C. . . side

3...感光材3. . . Photographic material

10...液體供應機構10. . . Liquid supply mechanism

11...液體供應部11. . . Liquid supply department

12...供應口12. . . Supply port

13...供應管13. . . Supply tube

13B...閥13B. . . valve

16...純水製造裝置16. . . Pure water manufacturing device

17...調溫裝置17. . . Temperature control device

18...返管18. . . Back pipe

18B...第1閥18B. . . First valve

19...供應管19. . . Supply tube

19B...第2閥19B. . . Second valve

20...液體回收機構20. . . Liquid recovery mechanism

21...液體回收部twenty one. . . Liquid recovery department

22...回收口twenty two. . . Recovery port

23...回收管twenty three. . . Recovery tube

23B...閥23B. . . valve

60,60A,60B...測量裝置60, 60A, 60B. . . Measuring device

61~64...測量器61~64. . . Measurer

61K~64K...分支管61K~64K. . . Branch tube

70...嘴構件70. . . Mouth member

70A...下面70A. . . below

91,93,98...移動鏡91,93,98. . . Moving mirror

92,94,99...雷射干涉儀92,94,99. . . Laser interferometer

95,97...上面95,97. . . Above

96...凹部96. . . Concave

100...既定區域100. . . Established area

120...功能液供應裝置120. . . Functional fluid supply device

161...純水製造器161. . . Pure water maker

162...超純水製造器162. . . Ultrapure water maker

171...粗調溫器171. . . Coarse thermostat

172...流量控制器172. . . Flow controller

173...脫氣裝置173. . . Degassing device

174...過濾器174. . . filter

175...微調溫器175. . . Micro thermostat

300...基準構件300. . . Reference member

400,500,600...感測器400,500,600. . . Sensor

301,401,501,601...上面301,401,501,601. . . Above

AR...投影區域AR. . . Projection area

AX...光軸AX. . . Optical axis

BP...基座構件BP. . . Base member

C1...第1位置C1. . . First position

C2...第2位置C2. . . 2nd position

CONT...控制裝置CONT. . . Control device

DP...虛置基板DP. . . Virtual substrate

EL...曝光用光EL. . . Exposure light

EX...曝光裝置EX. . . Exposure device

IL...照明光學系統IL. . . Lighting optical system

INF...告知裝置INF. . . Notification device

K1...光路空間K1. . . Light path space

LK...功能液LK. . . Functional fluid

LR...液浸區域LR. . . Liquid immersion area

LQ...液體LQ. . . liquid

LSA...下面LSA. . . below

LS1...第1光學元件LS1. . . First optical element

M...光罩M. . . Mask

MFM...第1基準標記MFM. . . First fiducial mark

MRY...記憶裝置MRY. . . Memory device

MST...光罩載台MST. . . Photomask stage

MSTD...光罩載台驅動裝置MSTD. . . Photomask stage drive

P...基板P. . . Substrate

PFM...第2基準標記PFM. . . 2nd fiducial mark

PH...基板保持具PH. . . Substrate holder

PK...鏡筒PK. . . Lens barrel

PL...投影光學系統PL. . . Projection optical system

SD1...基板載台驅動裝置SD1. . . Substrate stage drive

SD2...測量載台驅動裝置SD2. . . Measuring stage drive

ST1...基板載台ST1. . . Substrate stage

ST2...測量載台ST2. . . Measuring stage

圖1所示係第1實施形態之曝光裝置之示意構成圖。Fig. 1 is a schematic configuration diagram of an exposure apparatus according to a first embodiment.

圖2係自上方觀看載台之俯視圖。Figure 2 is a plan view of the stage viewed from above.

圖3係顯示液浸區域在基板載台與測量載台之間移動之狀態圖。Fig. 3 is a view showing a state in which the liquid immersion area moves between the substrate stage and the measurement stage.

圖4係顯示液體供應部之示意構成圖。Fig. 4 is a schematic configuration diagram showing a liquid supply portion.

圖5係顯示測量裝置之示意構成圖。Fig. 5 is a view showing a schematic configuration of a measuring device.

圖6係用以說明曝光順序之一例的流程圖。Fig. 6 is a flow chart for explaining an example of an exposure sequence.

圖7所示係正在測量基板上液體之狀態圖。Figure 7 is a state diagram of the liquid being measured on the substrate.

圖8係顯示基板之一例之圖。Fig. 8 is a view showing an example of a substrate.

圖9係顯示基板之另一例之圖。Fig. 9 is a view showing another example of the substrate.

圖10係顯示第2實施形態之曝光裝置之圖。Fig. 10 is a view showing the exposure apparatus of the second embodiment.

圖11係顯示第3實施形態之曝光裝置之圖。Fig. 11 is a view showing the exposure apparatus of the third embodiment.

圖12係顯示第4實施形態之曝光裝置之圖。Fig. 12 is a view showing the exposure apparatus of the fourth embodiment.

圖13係顯示半導體元件步驟之一例之流程圖。Fig. 13 is a flow chart showing an example of the steps of the semiconductor element.

1...液浸機構1. . . Liquid immersion mechanism

10...液體供應機構10. . . Liquid supply mechanism

11...液體供應部11. . . Liquid supply department

12...供應口12. . . Supply port

13...供應管13. . . Supply tube

13B...閥13B. . . valve

16...純水製造裝置16. . . Pure water manufacturing device

17...調溫裝置17. . . Temperature control device

18...返管18. . . Back pipe

18B...第1閥18B. . . First valve

19...供應管19. . . Supply tube

19B...第2閥19B. . . Second valve

20...液體回收機構20. . . Liquid recovery mechanism

21...液體回收部twenty one. . . Liquid recovery department

22...回收口twenty two. . . Recovery port

23...回收管twenty three. . . Recovery tube

23B...閥23B. . . valve

60...測量裝置60. . . Measuring device

70...嘴構件70. . . Mouth member

70A...下面70A. . . below

91...移動鏡91. . . Moving mirror

92...雷射干涉儀92. . . Laser interferometer

93...移動鏡93. . . Moving mirror

94...雷射干涉儀94. . . Laser interferometer

95...上面95. . . Above

96...凹部96. . . Concave

97...上面97. . . Above

98...移動鏡98. . . Moving mirror

99...雷射干涉儀99. . . Laser interferometer

100...既定區域100. . . Established area

120...功能液供應裝置120. . . Functional fluid supply device

AR...投影區域AR. . . Projection area

AX...光軸AX. . . Optical axis

BP...基座構件BP. . . Base member

CONT...控制裝置CONT. . . Control device

EL...曝光用光EL. . . Exposure light

EX...曝光裝置EX. . . Exposure device

IL...照明光學系統IL. . . Lighting optical system

INF...告知裝置INF. . . Notification device

K1...光路空間K1. . . Light path space

LR...液浸區域LR. . . Liquid immersion area

LQ...液體LQ. . . liquid

LSA...下面LSA. . . below

LS1...第1光學元件LS1. . . First optical element

M...光罩M. . . Mask

MRY...記憶裝置MRY. . . Memory device

MST...光罩載台MST. . . Photomask stage

MSTD...光罩載台驅動裝置MSTD. . . Photomask stage drive

P...基板P. . . Substrate

PH...基板保持具PH. . . Substrate holder

PK...鏡筒PK. . . Lens barrel

PL...投影光學系統PL. . . Projection optical system

SD1...基板載台驅動裝置SD1. . . Substrate stage drive

SD2...測量載台驅動裝置SD2. . . Measuring stage drive

ST1...基板載台ST1. . . Substrate stage

ST2...測量載台ST2. . . Measuring stage

Claims (35)

一種曝光裝置,係透過光學構件對基板照射曝光用光來使得該基板曝光,其特徵在於,具備:液浸機構,用以以液體充滿與在該光學構件之光出射側所配置之該基板相異之物體與該光學構件之間的光路空間;以及測量裝置,在與該基板相異之該物體上形成有液浸區域之狀態下,對液體之性質與成分中至少一者進行測量。 An exposure apparatus for exposing a substrate by exposing exposure light to an optical member through an optical member, comprising: a liquid immersion mechanism for filling the substrate with the liquid disposed on a light exit side of the optical member And an optical path space between the object and the optical member; and the measuring device measures at least one of a property and a composition of the liquid in a state in which the liquid immersion area is formed on the object different from the substrate. 如申請專利範圍第1項之曝光裝置,其中,該光學構件為投影光學系統之至少一部分。 The exposure apparatus of claim 1, wherein the optical member is at least a part of a projection optical system. 如申請專利範圍第1項之曝光裝置,其中,該物體具有不致污染該液體之既定區域;該液浸機構係於該投影光學系統與該物體上之該既定區域之間充滿液體。 The exposure apparatus of claim 1, wherein the object has a predetermined area that does not contaminate the liquid; the liquid immersion mechanism is filled with liquid between the projection optical system and the predetermined area on the object. 如申請專利範圍第1項之曝光裝置,其中,該液浸機構具備用以回收液體之液體回收機構;該測量裝置係對以該液體回收機構回收之液體進行測量。 The exposure apparatus of claim 1, wherein the liquid immersion mechanism is provided with a liquid recovery mechanism for recovering a liquid; and the measurement device measures the liquid recovered by the liquid recovery mechanism. 如申請專利範圍第4項之曝光裝置,其中,該液體回收機構具備:所回收之液體所流經之回收流路、以及自該回收流路之中途起分支之分支流路;該測量裝置係對該分支流路之液體進行測量。 The exposure apparatus of claim 4, wherein the liquid recovery mechanism includes: a recovery flow path through which the recovered liquid flows, and a branch flow path branched from the middle of the recovery flow path; The liquid of the branch flow path is measured. 如申請專利範圍第1項之曝光裝置,其中,該物體可於該投影光學系統之像面側移動。 The exposure apparatus of claim 1, wherein the object is movable on an image side of the projection optical system. 如申請專利範圍第6項之曝光裝置,其中,該物體包含可保持該基板進行移動之第1可動構件。 The exposure apparatus of claim 6, wherein the object includes a first movable member that can hold the substrate to move. 如申請專利範圍第6項之曝光裝置,其中,該物體包含可保持該基板進行移動之第1可動構件所保持的虛置基板。 The exposure apparatus of claim 6, wherein the object includes a dummy substrate held by the first movable member that can hold the substrate to move. 如申請專利範圍第6項之曝光裝置,其中,該物體包含第2可動構件,該第2可動構件可搭載以光學方式進行曝光處理相關測量的光測量器並移動。 The exposure apparatus according to claim 6, wherein the object includes a second movable member, and the second movable member can be mounted and moved by an optical measuring device that optically performs exposure-related measurement. 如申請專利範圍第9項之曝光裝置,其中,於該投影光學系統與該第2可動構件上之該光測量器之間充滿液體之狀態下,進行該光測量器之測量動作,並使得該光測量器之測量動作與該測量裝置之測量動作之至少一部分並行。 The exposure apparatus of claim 9, wherein the measuring action of the optical measuring device is performed in a state where a liquid is filled between the projection optical system and the optical measuring device on the second movable member, and the measuring action is performed The measurement action of the light measurer is in parallel with at least a portion of the measurement action of the measurement device. 如申請專利範圍第1項之曝光裝置,其具備依據該測量裝置之測量結果控制曝光動作的控制裝置。 An exposure apparatus according to claim 1, wherein the exposure apparatus controls the exposure operation based on the measurement result of the measurement apparatus. 如申請專利範圍第11項之曝光裝置,其中,該控制裝置係對該測量裝置之測量結果是否異常做判定,依據該判定結果對曝光動作進行控制。 The exposure apparatus of claim 11, wherein the control device determines whether the measurement result of the measurement device is abnormal, and controls the exposure operation according to the determination result. 如申請專利範圍第11項之曝光裝置,其中,該控制裝置係依據與該液體之性質及成分中至少一者相關之容許值與該測量裝置之測量結果對曝光動作進行控制。 The exposure apparatus of claim 11, wherein the control device controls the exposure operation based on an allowable value associated with at least one of a property and a composition of the liquid and a measurement result of the measuring device. 如申請專利範圍第13項之曝光裝置,其中,該容許值係依據在該測量裝置之測量動作後實施之曝光程序來決定。 The exposure apparatus of claim 13, wherein the allowable value is determined according to an exposure program implemented after the measuring operation of the measuring device. 如申請專利範圍第11項之曝光裝置,其具備用以告知該測量裝置之測量結果的告知裝置;該控制裝置在該測量結果為異常時,以該告知裝置發出警告。 An exposure apparatus according to claim 11, which is provided with an informing means for notifying the measurement result of the measuring means; the control means issues a warning by the informing means when the measurement result is abnormal. 如申請專利範圍第11項之曝光裝置,其中,該液浸機構具有液體流經之流路;該曝光裝置具備複數之調整裝置,係設置於該液浸機構之流路的既定位置,可對該液體之性質與成分中至少一者進行調整;該控制裝置係依據該測量裝置之測量結果,指定該複數之調整裝置中至少一個調整裝置。 The exposure apparatus of claim 11, wherein the liquid immersion mechanism has a flow path through which the liquid flows; the exposure device includes a plurality of adjustment devices disposed at a predetermined position of the flow path of the liquid immersion mechanism, At least one of the properties and the composition of the liquid is adjusted; the control device specifies at least one of the plurality of adjustment devices based on the measurement result of the measuring device. 如申請專利範圍第11項之曝光裝置,其中,該控制裝置,係依據在以液體充滿該投影光學系統與該物體間之狀態之該測量裝置之第1測量結果、以及在以液體充滿該投影光學系統與該基板間之狀態之該測量裝置之第2測量結果,來求出從該基板溶出至液體之物質之種類。 The exposure apparatus of claim 11, wherein the control device is based on a first measurement result of the measuring device in a state in which the projection optical system is filled with the liquid and the object, and the projection is filled with the liquid The second measurement result of the measuring device between the optical system and the substrate is used to determine the type of substance eluted from the substrate to the liquid. 如申請專利範圍第11項之曝光裝置,其中,該控制裝置,係依據在以液體充滿該投影光學系統與該物體間之狀態之該測量裝置之第1測量結果、以及在以液體充滿該投影光學系統與該基板間之狀態之該測量裝置之第2測量結果,來求出從該基板溶出至液體之物質之量。 The exposure apparatus of claim 11, wherein the control device is based on a first measurement result of the measuring device in a state in which the projection optical system is filled with the liquid and the object, and the projection is filled with the liquid The amount of the substance eluted from the substrate to the liquid is obtained from the second measurement result of the measuring device between the optical system and the substrate. 如申請專利範圍第18項之曝光裝置,其中,該控制裝置係依據事先求出之與該溶出之物質之量相關之容許值、以及該測量裝置之測量結果,對曝光動作進行控制。 The exposure apparatus of claim 18, wherein the control device controls the exposure operation based on a predetermined allowable value associated with the amount of the dissolved substance and a measurement result of the measuring device. 如申請專利範圍第11項之曝光裝置,其中,該基板具有基材、以及被覆於該基材上之感光材;該控制裝置,係依據在以液體充滿該投影光學系統與該物體間之狀態之該測量裝置之第1測量結果、以及在以液體充滿該投影光學系統與該基板間之狀態之該測量裝置之第2測量結果,來求出與該基板之該感光材相關之資訊。 The exposure apparatus of claim 11, wherein the substrate has a substrate and a photosensitive material coated on the substrate; the control device is based on a state in which the projection optical system and the object are filled with a liquid The first measurement result of the measuring device and the second measurement result of the measuring device in a state in which the liquid is filled between the projection optical system and the substrate are used to obtain information on the photosensitive material of the substrate. 如申請專利範圍第1至20項中任一項之曝光裝置,其中,該液浸機構具備用以供應液體之供應流路、以及用以回收液體之回收流路;該測量裝置,係分別對該液浸機構之供應流路中第1位置之液體、以及該液浸機構之回收流路中第2位置之液體進行測量;該控制裝置,係依據該第1位置之液體的測量結果、以及該第2位置之液體的測量結果,求出在該第1位置與該第2位置之間的流路狀態。 The exposure apparatus according to any one of claims 1 to 20, wherein the liquid immersion mechanism is provided with a supply flow path for supplying a liquid, and a recovery flow path for recovering the liquid; the measuring device is respectively Measuring the liquid at the first position in the supply flow path of the liquid immersion mechanism and the liquid at the second position in the recovery flow path of the liquid immersion mechanism; the control device is based on the measurement result of the liquid at the first position, and As a result of measuring the liquid at the second position, the state of the flow path between the first position and the second position is obtained. 如申請專利範圍第21項之曝光裝置,其中,該液浸機構具有嘴構件,該嘴構件具有用以供應液體之供應口與用以回收液體之回收口中至少一者;該嘴構件係設於該第1位置與該第2位置之間。 The exposure apparatus of claim 21, wherein the liquid immersion mechanism has a nozzle member having at least one of a supply port for supplying a liquid and a recovery port for recovering a liquid; the nozzle member is attached to The first position is between the second position and the second position. 如申請專利範圍第21項之曝光裝置,其中,該控制裝置,係依據該測量裝置之測量結果來判斷是否對該第1位置與該第2位置之間的流路進行維修。 The exposure apparatus of claim 21, wherein the control device determines whether to repair the flow path between the first position and the second position based on a measurement result of the measurement device. 如申請專利範圍第1至20項中任一項之曝光裝置,其具備記憶裝置,用以儲存該測量裝置之測量結果。 An exposure apparatus according to any one of claims 1 to 20, which is provided with a memory device for storing measurement results of the measurement device. 如申請專利範圍第24項之曝光裝置,其中,該記憶裝置係將該測量裝置之測量結果對應時間經過來加以儲存。 The exposure apparatus of claim 24, wherein the memory device stores the measurement result of the measuring device in response to a time lapse. 如申請專利範圍第24項之曝光裝置,其中,複數之基板係依序曝光;該記憶裝置係將該測量裝置之測量結果對應該基板來加以儲存。 The exposure apparatus of claim 24, wherein the plurality of substrates are sequentially exposed; the memory device stores the measurement results of the measuring device corresponding to the substrate. 如申請專利範圍第1至20項中任一項之曝光裝置,其中,係藉由該液浸機構,在該投影光學系統與該基板間之該曝光用光之光路空間充滿液體;透過該投影光學系統與該液體對該基板上照射曝光用光,以使該基板曝光。 The exposure apparatus according to any one of claims 1 to 20, wherein, by the liquid immersion mechanism, a space of the light path of the exposure light between the projection optical system and the substrate is filled with a liquid; The optical system and the liquid illuminate the substrate with exposure light to expose the substrate. 如申請專利範圍第1至20項中任一項之曝光裝置,其進一步具備依據該測量裝置之測量結果進行動作的洗淨裝置。 The exposure apparatus according to any one of claims 1 to 20, further comprising a cleaning apparatus that operates in accordance with a measurement result of the measuring apparatus. 一種半導體元件製造方法,其包含:使用申請專利範圍第1至28項中任一項之曝光裝置使晶圓曝光之曝光處理步驟。 A method of manufacturing a semiconductor device, comprising: an exposure processing step of exposing a wafer using an exposure apparatus according to any one of claims 1 to 28. 一種曝光方法,係透過液體使基板曝光,其特徵在於,包含下述步驟:第1步驟,係在與該基板相異之物體上形成液浸區域;第2步驟,係在該物體上形成有液浸區域之狀態下測量液體之性質及成分中之至少一方;以及第3步驟,係透過在該基板上形成之液浸區域的液體 對該基板照射曝光用光以使該基板曝光。 An exposure method for exposing a substrate through a liquid, comprising the steps of: forming a liquid immersion area on an object different from the substrate in the first step; and forming a liquid immersion area on the object in the second step Measuring at least one of the properties and composition of the liquid in the state of the liquid immersion area; and the third step of passing the liquid in the liquid immersion area formed on the substrate The substrate is irradiated with exposure light to expose the substrate. 如申請專利範圍第30項之曝光方法,其中,於該第1步驟中用以於該物體上形成液浸區域所使用之液體供應系統,係在該第3步驟中為了於該基板上形成液浸區域而被使用。 The exposure method of claim 30, wherein the liquid supply system for forming a liquid immersion area on the object in the first step is to form a liquid on the substrate in the third step. It is used while immersing the area. 如申請專利範圍第30項之曝光方法,其中,該物體之液體接觸面,係以不致在液體中產生物質之材料所形成。 The exposure method of claim 30, wherein the liquid contact surface of the object is formed by a material that does not produce a substance in the liquid. 如申請專利範圍第30項之曝光方法,其中,於該第2步驟中,測量從該液浸區域回收之液體之性質及成分中之至少一方。 The exposure method of claim 30, wherein in the second step, at least one of a property and a component of the liquid recovered from the liquid immersion area is measured. 如申請專利範圍第30項之曝光方法,其中,於該第3步驟中,進一步包含測量在該基板上所形成之液浸區域之液體之性質及成分中之至少一方之動作,將在該第3步驟之測量結果與在該第2步驟之測量結果做比較。 The exposure method of claim 30, wherein the third step further comprises an operation of measuring at least one of a property and a composition of the liquid in the liquid immersion area formed on the substrate, The measurement results of the 3 steps are compared with the measurement results of the second step. 如申請專利範圍第30項之曝光方法,其進一步包含更換該基板之步驟,於該基板更換步驟中,進行該第1與第2步驟。 The exposure method of claim 30, further comprising the step of replacing the substrate, wherein the first and second steps are performed in the substrate replacement step.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1420298A2 (en) * 2002-11-12 2004-05-19 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1420298A2 (en) * 2002-11-12 2004-05-19 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
WO2004053950A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device

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