TWI415312B - Light emitting diode packing structure - Google Patents
Light emitting diode packing structure Download PDFInfo
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- TWI415312B TWI415312B TW099137080A TW99137080A TWI415312B TW I415312 B TWI415312 B TW I415312B TW 099137080 A TW099137080 A TW 099137080A TW 99137080 A TW99137080 A TW 99137080A TW I415312 B TWI415312 B TW I415312B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
Description
本發明涉及一種發光二極體封裝結構。 The invention relates to a light emitting diode package structure.
發光二極體(Light Emitting Diode,LED)是一種可將電流轉換成特定波長範圍的光的半導體元件。發光二極體以其亮度高、工作電壓低、功耗小、易與積體電路匹配、驅動簡單、壽命長等優點,從而可作為光源而廣泛應用於照明領域。 A Light Emitting Diode (LED) is a semiconductor component that converts current into light of a specific wavelength range. The light-emitting diode is widely used in the field of illumination because of its high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life.
在先前的發光二極體封裝結構中,一般需要一連接線使發光二極體晶粒與導線架形成電學連接,此過程通常稱之為打線。在打線的過程中,通常是利用打線機將連接線的一端加熱熔融後固定在發光二極體晶粒的電極位置,然後將連接線的另一端拉至導線架的另一端固定。先前的連接線通常形成倒鉤狀的結構,其一端與發光二極體晶粒的電極相連,另一端與導線架相連。然而,上述的連接線通常設置的較高,如此一來將會造成導線使用的浪費,增加元件製造的成本。 In previous LED packages, a connection line was generally required to electrically connect the LED die to the lead frame, a process commonly referred to as wire bonding. In the process of wire bonding, one end of the connecting wire is usually heated and melted by a wire bonding machine and fixed at the electrode position of the light-emitting diode die, and then the other end of the connecting wire is pulled to the other end of the lead frame to be fixed. Previous connections typically formed a barbed structure with one end connected to the electrodes of the light-emitting diode die and the other end connected to the lead frame. However, the above-mentioned connecting lines are usually set higher, which will cause waste of the use of the wires and increase the cost of manufacturing the components.
有鑒於此,有必要提供一種可減少連接線使用長度的發光二極體封裝結構。 In view of the above, it is necessary to provide a light emitting diode package structure which can reduce the length of use of the connection line.
一種發光二極體封裝結構,其包括基板、設置於基板上的第一電連接部與第二電連接部,以及設置於第一電連接部上的發光二極體晶粒。所述第一電連接部與第二電連接部電性絕緣。所述發光二極體晶粒包括第一電極與第二電極,所述第一電極與第一電連接部電性連接,所述第二電極藉由連接線與第二電連接部形成電性連接。所述發光二極體晶粒具有鄰近第一電連接部設置的第一表面與臨近第二電極設置的第二表面。所述連接線具有一最高點,該最高點與第一表面之間的垂直距離大於連接線的其他部分與第一表面之間的垂直距離。所述最高點與第二表面之間的垂直距離小於第一表面與第二表面之間垂直距離的一半。 A light emitting diode package structure includes a substrate, a first electrical connection portion and a second electrical connection portion disposed on the substrate, and a light emitting diode die disposed on the first electrical connection portion. The first electrical connection portion is electrically insulated from the second electrical connection portion. The light emitting diode die includes a first electrode and a second electrode, the first electrode is electrically connected to the first electrical connection portion, and the second electrode is electrically connected to the second electrical connection portion by the connecting wire connection. The light emitting diode die has a first surface disposed adjacent to the first electrical connection and a second surface disposed adjacent to the second electrode. The connecting line has a highest point, the vertical distance between the highest point and the first surface being greater than the vertical distance between the other portion of the connecting line and the first surface. The vertical distance between the highest point and the second surface is less than half the vertical distance between the first surface and the second surface.
藉由將連接線最高點與第二電極所在平面之間的距離設置成小於第二電極與基板表面的距離的一半,從而可以有效減少所使用的連接線的長度,降低發光二極體元件的製造成本。 By setting the distance between the highest point of the connecting line and the plane of the second electrode to be less than half of the distance between the second electrode and the surface of the substrate, the length of the connecting line used can be effectively reduced, and the LED component can be reduced. manufacturing cost.
100、600‧‧‧發光二極體封裝結構 100, 600‧‧‧Light emitting diode package structure
10、610‧‧‧基板 10, 610‧‧‧ substrate
110、611‧‧‧第一電連接部 110, 611‧‧‧ first electrical connection
130、613‧‧‧第一表面 130, 613‧‧‧ first surface
120、612‧‧‧第二電連接部 120, 612‧‧‧second electrical connection
20、620‧‧‧發光二極體晶粒 20, 620‧‧‧Light-emitting diode grains
210、621‧‧‧半導體發光結構 210, 621‧‧‧ semiconductor light-emitting structure
220、622‧‧‧第一電極 220, 622‧‧‧ first electrode
230、623‧‧‧第二電極 230, 623‧‧‧ second electrode
240、624‧‧‧第二表面 240, 624‧‧‧ second surface
625‧‧‧第三表面 625‧‧‧ third surface
30、630‧‧‧連接線 30, 630‧‧‧ connection line
330、632‧‧‧第一電接觸點 330, 632‧‧‧ first electrical contact point
642‧‧‧第二電接觸點 642‧‧‧Second electrical contact
633、643‧‧‧焊球 633, 643‧‧ ‧ solder balls
310、631、641‧‧‧最高點 The highest point of 310, 631, 641‧‧
40、650‧‧‧封裝體 40, 650‧‧‧ package
50、660‧‧‧反射杯 50, 660‧‧‧Reflection Cup
640‧‧‧第二連接線 640‧‧‧second cable
圖1是本發明第一實施例中的發光二極體封裝結構的截面示意圖。 1 is a schematic cross-sectional view showing a light emitting diode package structure in a first embodiment of the present invention.
圖2是本發明第二實施例中的發光二極體封裝結構的截面示意圖。 2 is a schematic cross-sectional view showing a light emitting diode package structure in a second embodiment of the present invention.
圖3是本發明第三實施例中的發光二極體封裝結構的截面示意圖。 3 is a schematic cross-sectional view showing a light emitting diode package structure in a third embodiment of the present invention.
圖4是本發明第四實施例中的發光二極體封裝結構的截面示意圖。 4 is a schematic cross-sectional view showing a light emitting diode package structure in a fourth embodiment of the present invention.
圖5是本發明第五實施例中的發光二極體封裝結構的截面示意圖。 Fig. 5 is a schematic cross-sectional view showing a light emitting diode package structure in a fifth embodiment of the present invention.
如圖1所示,本發明第一實施例的發光二極體封裝結構100包括基板10,設置於基板10上的發光二極體晶粒20以及連接線30。 As shown in FIG. 1 , the LED package structure 100 of the first embodiment of the present invention includes a substrate 10 , a light emitting diode die 20 disposed on the substrate 10 , and a connection line 30 .
所述基板10可以是鋁基電路板或者是表面設置有導電線路的陶瓷基板如氧化鋁基板、氧化鋅基板或者矽基板等。所述基板10的表面設置有第一電連接部110與第二電連接部120。所述第一電連接部110與第二電連接部120之間相互絕緣。在本實施例中,所述第一電連接部110與所述第二電連接部120從基板10的上表面延伸到下表面,從而形成一種可表面貼裝的結構。所述第一電連接部110具有用於設置發光二極體晶粒20的第一表面130。 The substrate 10 may be an aluminum-based circuit board or a ceramic substrate having a conductive line provided on the surface thereof, such as an alumina substrate, a zinc oxide substrate, or a germanium substrate. The surface of the substrate 10 is provided with a first electrical connection portion 110 and a second electrical connection portion 120. The first electrical connection portion 110 and the second electrical connection portion 120 are insulated from each other. In this embodiment, the first electrical connection portion 110 and the second electrical connection portion 120 extend from the upper surface to the lower surface of the substrate 10, thereby forming a surface mountable structure. The first electrical connection portion 110 has a first surface 130 for arranging the light emitting diode dies 20.
所述發光二極體晶粒20設置於第一電連接部110的第一表面130上。所述發光二極體晶粒20包括半導體發光結構210以及設置於半導體發光結構210兩端的第一電極220與第二電極230。在本實施例中,所述第一電極220設置於發光二極體晶粒20的底部。藉由焊接或者共晶結合的方法使第一電極220與第一電連接部110的第一表面130相接觸而形成電性連接,同時亦使到發光二極體晶粒20固定在第一電連接部110的第一表面130上。所述發光二極體晶粒20還進一步包括一遠離第一表面130設置的第二表面240。所述第二電極230設置於該發光二極體晶粒20的第二表面240上。 The LED die 20 is disposed on the first surface 130 of the first electrical connection portion 110. The light emitting diode die 20 includes a semiconductor light emitting structure 210 and a first electrode 220 and a second electrode 230 disposed at two ends of the semiconductor light emitting structure 210. In this embodiment, the first electrode 220 is disposed at the bottom of the light emitting diode die 20 . The first electrode 220 is electrically connected to the first surface 130 of the first electrical connection portion 110 by soldering or eutectic bonding, and the light-emitting diode die 20 is fixed to the first electrode. The first surface 130 of the connecting portion 110 is on. The light emitting diode die 20 further includes a second surface 240 disposed away from the first surface 130. The second electrode 230 is disposed on the second surface 240 of the LED die 20 .
連接線30設置於第二電極230與第二電連接部120之間使第二電極230與第二電連接部120形成電性連接。所述連接線30具有一最高 點310,該最高點310與第一表面130之間的垂直距離大於連接線30的其他部分與第一表面130之間的垂直距離。所述最高點310的位置滿足以下關係:h1<H1/2 The connection line 30 is disposed between the second electrode 230 and the second electrical connection portion 120 to electrically connect the second electrode 230 and the second electrical connection portion 120. The connecting line 30 has a highest point 310, and the vertical distance between the highest point 310 and the first surface 130 is greater than the vertical distance between the other portions of the connecting line 30 and the first surface 130. The position of the highest point 310 satisfies the following relationship: h 1 <H 1 /2
其中,h1為所述最高點310與所述第二表面240之間的垂直距離;H1為所述第二表面240與所述第一表面之間的垂直距離。將最高點310與第二表面240之間的垂直距離h1設置成小於第二表面240與第一表面130之間的垂直距離H1的一半,可以有效降低連接線30的高度,從而減少連接線30所使用的長度,有利於降低發光二極體元件成本。另外,由於連接線30高度的降低,相應的發光二極體封裝結構100的厚度也隨之降低,有利於實現元件的薄型化。 Wherein h 1 is a vertical distance between the highest point 310 and the second surface 240; H 1 is a vertical distance between the second surface 240 and the first surface. Setting the vertical distance h 1 between the highest point 310 and the second surface 240 to be less than half of the vertical distance H 1 between the second surface 240 and the first surface 130 can effectively reduce the height of the connecting line 30, thereby reducing the connection. The length used by the wire 30 is advantageous in reducing the cost of the light-emitting diode component. In addition, due to the decrease in the height of the connecting wire 30, the thickness of the corresponding LED package structure 100 is also reduced, which is advantageous for achieving thinning of components.
所述連接線30與第二電極230形成第一電接觸點330。所述連接線30在第一電接觸點330位置上的切線與第二表面240所處的平面之間的夾角θ為0度到45度之間。優選地,為進一步降低在打線過程中的應力對連接線30與第二電極230之間電學接觸性能的影響,可將連接線30的靠近第一電接觸點330的位置上的切線與第二表面240所處的平面之間的夾角θ設置成0度到30度之間。降低打線的角度可減少連接線30的用量,以降低成本。同時,由於連線線30貼近發光二極體晶粒20設置,其可以減少因連接線30的崩塌而發生的斷線,從而降低發光二極體封裝結構100失效的概率。 The connecting line 30 forms a first electrical contact point 330 with the second electrode 230. The angle θ between the tangent of the connecting line 30 at the position of the first electrical contact 330 and the plane at which the second surface 240 is located is between 0 and 45 degrees. Preferably, in order to further reduce the influence of the stress during the wire bonding on the electrical contact performance between the connection line 30 and the second electrode 230, the tangent to the position of the connection line 30 near the first electrical contact point 330 and the second The angle θ between the planes at which the surface 240 is located is set between 0 and 30 degrees. Reducing the angle of the wire can reduce the amount of the wire 30 to reduce the cost. At the same time, since the wiring 30 is disposed close to the LED die 20, it can reduce the disconnection caused by the collapse of the connection line 30, thereby reducing the probability of failure of the LED package 100.
根據需要,該發光二極體封裝結構100還可以進一步包括一封裝 體40。如圖2所示,該封裝體40完全覆蓋發光二極體晶粒20以及連接線30。用於防止發光二極體晶粒20受外界的環境如潮濕或者灰塵等雜質的影響。具體地,該封裝體40可以是環氧樹脂或者是矽樹脂又或者是玻璃材料。此外,該封裝體40內還可以摻入螢光粉粒子以實現波長的轉換來合成白光。 The LED package structure 100 may further include a package as needed. Body 40. As shown in FIG. 2, the package body 40 completely covers the LED die 20 and the connecting line 30. It is used to prevent the light-emitting diode die 20 from being affected by an external environment such as moisture or dust. Specifically, the package body 40 may be an epoxy resin or a resin or a glass material. In addition, the phosphor 40 particles may be incorporated into the package 40 to realize wavelength conversion to synthesize white light.
根據需要,該發光二極體封裝結構100還可以進一步包括一反射杯50。請參見圖3,該反射杯50設置於基板10的第一表面130上且圍繞在發光二極體晶粒20的周圍。該反射杯50與基板10一起形成了一容置腔體,所述發光二極體晶粒20設置於該容置腔體的內部,其所發出的朝向反射杯50的光線將會被反射杯50的內壁所反射,然後出射到外界。此時,所述封裝體40可設置於容置腔體的內部,該封裝體40完全覆蓋發光二極體晶粒20以及連接線30。同時,封裝體40內部可摻入螢光粉粒子,以實現波長的轉換以合成白光。 The LED package structure 100 may further include a reflective cup 50 as needed. Referring to FIG. 3 , the reflector cup 50 is disposed on the first surface 130 of the substrate 10 and surrounds the periphery of the LED die 20 . The reflector cup 50 and the substrate 10 form an accommodating cavity. The LED die 20 is disposed inside the accommodating cavity, and the light emitted toward the reflective cup 50 is reflected by the reflector cup. The inner wall of 50 is reflected and then emitted to the outside world. At this time, the package body 40 can be disposed inside the accommodating cavity, and the package body 40 completely covers the illuminating diode die 20 and the connecting line 30. At the same time, the inside of the package 40 may be doped with phosphor particles to achieve wavelength conversion to synthesize white light.
另外,發光二極體晶粒的兩電極並不限於上述實施例所述分佈於晶粒的相反兩側,其也可以位於晶粒的同一側。請參見圖4,本發明第四實施例的發光二極體封裝結構600包括基板610、設置於基板610上的發光二極體晶粒620、連接線630、第二連接線640、封裝體650以及反射杯660。 In addition, the two electrodes of the light-emitting diode crystal grains are not limited to the opposite sides of the crystal grains as described in the above embodiment, and may be located on the same side of the crystal grains. Referring to FIG. 4 , the LED package structure 600 of the fourth embodiment of the present invention includes a substrate 610 , a light emitting diode die 620 disposed on the substrate 610 , a connection line 630 , a second connection line 640 , and a package 650 . And a reflector cup 660.
所述基板610的表面設置有第一電連接部611與第二電連接部612。所述第一電連接部611與第二電連接部612之間相互絕緣。所述第一電連接部611具有第一表面613,發光二極體晶粒620設置於該第一表面613上。 The surface of the substrate 610 is provided with a first electrical connection portion 611 and a second electrical connection portion 612. The first electrical connection portion 611 and the second electrical connection portion 612 are insulated from each other. The first electrical connection portion 611 has a first surface 613 on which the light emitting diode die 620 is disposed.
所述發光二極體晶粒620設置於第一電連接部611的第一表面613上。所述發光二極體晶粒620包括半導體發光結構621以及第一電極622與第二電極623。所述半導體發光結構621具有設置於同一側的第二表面624與第三表面625。該第二電極623設置於該第二表面624上,該第一電極622設置於該第三表面625上。該第二電極623藉由連接線630與第二電連接部612電學連接。所述連接線630具有一最高點631,該最高點631與第一表面613之間的垂直距離大於連接線630的其他部分與第一表面613之間的垂直距離。所述最高點631的位置滿足以下關係:h2<H2/2 The LED die 620 is disposed on the first surface 613 of the first electrical connection portion 611. The light emitting diode die 620 includes a semiconductor light emitting structure 621 and first and second electrodes 622 and 623. The semiconductor light emitting structure 621 has a second surface 624 and a third surface 625 disposed on the same side. The second electrode 623 is disposed on the second surface 624 , and the first electrode 622 is disposed on the third surface 625 . The second electrode 623 is electrically connected to the second electrical connection portion 612 by a connection line 630. The connecting line 630 has a highest point 631, and the vertical distance between the highest point 631 and the first surface 613 is greater than the vertical distance between the other portion of the connecting line 630 and the first surface 613. The position of the highest point 631 satisfies the following relationship: h 2 <H 2 /2
其中,h2為所述最高點631與所述第二表面624之間的垂直距離;H2為所述第二表面624與所述第一表面613之間的垂直距離。與第一實施例不同的是,在本實施例中,所述發光二極體晶粒620藉由固晶膠固定在第一電連接部611的表面。所述第二連接線640設置於第一電極622與第一電連接部611之間使第一電極622與第一電連接部611形成電性連接。所述第二電連接線640具有一最高點641,該最高點641與第一表面613之間的垂直距離大於第二電連接線640的其他部分與第一表面613之間的垂直距離。所述最高點641的位置滿足以下關係:h3<H3/2 Wherein h 2 is a vertical distance between the highest point 631 and the second surface 624; H 2 is a vertical distance between the second surface 624 and the first surface 613. Different from the first embodiment, in the embodiment, the LED die 620 is fixed on the surface of the first electrical connection portion 611 by a bonding adhesive. The second connection line 640 is disposed between the first electrode 622 and the first electrical connection portion 611 to electrically connect the first electrode 622 and the first electrical connection portion 611 . The second electrical connection line 640 has a highest point 641. The vertical distance between the highest point 641 and the first surface 613 is greater than the vertical distance between the other portion of the second electrical connection line 640 and the first surface 613. The position of the highest point 641 satisfies the following relationship: h 3 <H 3 /2
其中,h3為所述最高點641與所述第三表面625之間的垂直距離;H3為所述第三表面625與所述第一表面613之間的垂直距離。藉由 對連接線630與第二連接線640高度的設置,可有效控制發光二極體封裝結構600的厚度,使元件實現薄型化。 Where h 3 is the vertical distance between the highest point 641 and the third surface 625; H 3 is the vertical distance between the third surface 625 and the first surface 613. By setting the height of the connection line 630 and the second connection line 640, the thickness of the light-emitting diode package structure 600 can be effectively controlled, and the device can be made thinner.
所述連接線630與第二電極623形成第一電接觸點632。連接線630在第一電接觸點632位置上的切線與第二表面624所處的平面之間的夾角為0度到45度之間,以減少因外界應力的作用而使連接線630斷線。優選地,連接線630在第一電接觸點632位置上的切線與第二表面624所處的平面之間的夾角為0度到30度之間。 The connection line 630 forms a first electrical contact 632 with the second electrode 623. The angle between the tangent of the connecting line 630 at the position of the first electrical contact 632 and the plane where the second surface 624 is located is between 0 and 45 degrees to reduce the disconnection of the connecting line 630 due to external stress. . Preferably, the angle between the tangent of the connecting line 630 at the location of the first electrical contact 632 and the plane at which the second surface 624 is located is between 0 and 30 degrees.
所述第二連接線640與第一電極622形成第二電接觸點642。所述第二連接線640在第二電接觸點642位置上的切線與第三表面625所處的平面之間的夾角為0度到45度之間。優選地,第二連接線640在第二電接觸點642位置上的切線與第三表面625所處的平面之間的夾角為0度到30度之間。 The second connection line 640 forms a second electrical contact point 642 with the first electrode 622. The angle between the tangent to the second electrical contact 642 and the plane at which the third surface 625 is located is between 0 and 45 degrees. Preferably, the angle between the tangent to the second electrical contact 642 and the plane at which the third surface 625 is located is between 0 and 30 degrees.
根據需要,所述發光二極體封裝結構600還可以進一步包括一封裝體650。該封裝體650覆蓋發光二極體晶粒620以及連接線630與第二連接線640。該封裝體650用於防止發光二極體晶粒620以及相應的電學接觸點受到外界環境的影響。該封裝體650可以是環氧樹脂或者是矽樹脂又或者是玻璃材料。此外,該封裝體650內還可以摻入螢光粉粒子以實現波長的轉換來合成白光。 The LED package structure 600 may further include a package 650 as needed. The package body 650 covers the LED die 620 and the connection line 630 and the second connection line 640. The package 650 is used to prevent the LED 620 and corresponding electrical contacts from being affected by the external environment. The package 650 can be an epoxy resin or a resin or a glass material. In addition, the phosphor granules may be incorporated into the package 650 to realize wavelength conversion to synthesize white light.
根據需要,所述發光二極體封裝結構600還可以進一步包括一反射杯660。該反射杯660設置於基板610上且圍繞在發光二極體晶粒620的周圍。該反射杯660與基板610一起形成了一容置腔體,所述發光二極體晶粒620設置於該容置腔體的內部,其所發出的 朝向反射杯660的光線將會被反射杯660的內壁所反射,然後出射到外界。此時,所述封裝體650可設置於容置腔體的內部,該封裝體650完全覆蓋發光二極體晶粒620、連接線630以及第二連接線640。同時,封裝體650內部可摻入螢光粉粒子,以實現波長的轉換以合成白光。 The light emitting diode package structure 600 may further include a reflective cup 660 as needed. The reflective cup 660 is disposed on the substrate 610 and surrounds the periphery of the light emitting diode die 620. The reflector cup 660 and the substrate 610 form an accommodating cavity, and the illuminating diode die 620 is disposed inside the accommodating cavity. The light directed toward the reflective cup 660 will be reflected by the inner wall of the reflective cup 660 and then exit to the outside. At this time, the package body 650 can be disposed inside the accommodating cavity, and the package body 650 completely covers the LED dies 620, the connection line 630, and the second connection line 640. At the same time, the inside of the package 650 may be doped with phosphor particles to achieve wavelength conversion to synthesize white light.
根據需要,在打線的過程中,可在連接線630與第二電極623的接觸點位置還可以形成一由連接線630熔融而形成的焊球633,如圖5所示。該焊球633用以增強連接線與第二電極623之間的電接觸性能。根據需要,該焊球633呈傾斜形狀,該焊球633的與連接線630接觸點相反的表面與第二電極624所在的平面形成一0度到90度之間的夾角θ 3。優選地,該夾角為0度到45度。將焊球633與第二電極623之間的夾角設置為0度到90度之間目的在與使連線線630貼近發光二極體晶粒620設置,其可以減少因連接線630的崩塌而發生的斷線,從而降低發光二極體封裝結構600失效的概率。 If necessary, a solder ball 633 formed by melting the connecting wire 630 may be formed at the contact point of the connecting wire 630 and the second electrode 623 during the wire bonding, as shown in FIG. The solder ball 633 serves to enhance the electrical contact performance between the connection line and the second electrode 623. The solder ball 633 has an inclined shape as needed, and a surface of the solder ball 633 opposite to the contact point of the connection line 630 forms an included angle θ 3 between 0 and 90 degrees with the plane where the second electrode 624 is located. Preferably, the included angle is from 0 degrees to 45 degrees. The angle between the solder ball 633 and the second electrode 623 is set to be between 0 degrees and 90 degrees. The purpose is to place the wiring line 630 adjacent to the light-emitting diode die 620, which can reduce the collapse of the connection line 630. The disconnection occurs, thereby reducing the probability of failure of the LED package 600.
同樣地,在連接線640與第一電極622之間亦可以形成有由連接線640熔融而形成的焊球643。該焊球643的與連接線640接觸點相反的表面與第一電極622所在的平面形成一0度到90度之間的夾角θ 2,用以使連接線640貼近發光二極體晶粒620設置,減少因連接線640的崩塌而發生的斷線。 Similarly, a solder ball 643 formed by melting the connection line 640 may be formed between the connection line 640 and the first electrode 622. The surface of the solder ball 643 opposite to the contact point of the connection line 640 forms an angle θ 2 between 0 and 90 degrees with the plane of the first electrode 622 for bringing the connection line 640 close to the light-emitting diode die 620. It is provided to reduce the disconnection caused by the collapse of the connecting wire 640.
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之 精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Anyone who is familiar with the skill of this case is assisted by the present invention. Equivalent modifications or variations made by the spirit are to be covered by the following patents.
100‧‧‧發光二極體封裝結構 100‧‧‧Light emitting diode package structure
10‧‧‧基板 10‧‧‧Substrate
110‧‧‧第一電連接部 110‧‧‧First electrical connection
130‧‧‧第一表面 130‧‧‧ first surface
120‧‧‧第二電連接部 120‧‧‧Second electrical connection
20‧‧‧發光二極體晶粒 20‧‧‧Light-emitting diode grains
210‧‧‧半導體發光結構 210‧‧‧Semiconductor light-emitting structure
220‧‧‧第一電極 220‧‧‧First electrode
230‧‧‧第二電極 230‧‧‧second electrode
240‧‧‧第二表面 240‧‧‧ second surface
330‧‧‧第一電接觸點 330‧‧‧First electrical contact point
30‧‧‧連接線 30‧‧‧Connecting line
310‧‧‧最高點 310‧‧ ‧ highest point
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TW200847480A (en) * | 2007-05-29 | 2008-12-01 | Iwatani Internat Corp | Semiconductor light-emitting device |
TW201034264A (en) * | 2009-03-13 | 2010-09-16 | Advanced Optoelectronic Tech | A method for forming a filp chip structure of semiconductor optoelectronic device and fabricated thereof |
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TW200847480A (en) * | 2007-05-29 | 2008-12-01 | Iwatani Internat Corp | Semiconductor light-emitting device |
TW201034264A (en) * | 2009-03-13 | 2010-09-16 | Advanced Optoelectronic Tech | A method for forming a filp chip structure of semiconductor optoelectronic device and fabricated thereof |
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