TWI414635B - Surface treatment of metal implants - Google Patents

Surface treatment of metal implants Download PDF

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TWI414635B
TWI414635B TW98115318A TW98115318A TWI414635B TW I414635 B TWI414635 B TW I414635B TW 98115318 A TW98115318 A TW 98115318A TW 98115318 A TW98115318 A TW 98115318A TW I414635 B TWI414635 B TW I414635B
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Taiwan
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acid
metal implant
surface treatment
treatment method
acid solution
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TW98115318A
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Chinese (zh)
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TW201040317A (en
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Tzu Hsuan Kuo
Yi Lin
Wei Jen Shih
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Metal Ind Res & Dev Ct
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    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • A61F2/02Prostheses implantable into the body
    • A61F2/30Joints
    • A61F2/30767Special external or bone-contacting surface, e.g. coating for improving bone ingrowth

Abstract

A high temperature acid liquor is firstly utilized to form uniform micrometer scale pores on surfaces of a titanium metal implant component, and a composite liquor containing hydrogen peroxide is utilized to perform deoxidation/ reoxidation treatment for the rough surface of the titanium metal implant to produce a layer of an uniform oxidation layer, thereby increasing biological compatibility of the implant.

Description

金屬植入物的表面處理方法Surface treatment method for metal implants

本發明是有關於一種金屬植入物之表面處理方法,特別是能於金屬植入物表面形成微米級粗糙孔洞,並生成一層均勻氧化層之表面處理方法。The invention relates to a surface treatment method for a metal implant, in particular to a surface treatment method capable of forming micron-scale rough holes on the surface of a metal implant and forming a uniform oxide layer.

目前,在金屬植入物(implant)表面形成多孔結構的方法有多種,如:噴砂法(sand blasting)或酸蝕法(acid etching),透過上述方法可使金屬植入物的表面粗糙度增加,產生具有均勻粗糙度的植體表面,以促進與植入區域周圍的骨組織聯結。At present, there are various methods for forming a porous structure on the surface of a metal implant, such as sand blasting or acid etching, and the surface roughness of the metal implant can be increased by the above method. An implant surface having uniform roughness is created to promote bonding with bone tissue surrounding the implanted area.

舉例來說,美國專利字號US6,491,723揭露一種金屬植入物的表面處理方法,其表面處理步驟係先利用氫氟酸(HF)進行第一次酸蝕,用以去除表面自然氧化層;再以高溫的硫酸(H2 SO4 )/鹽酸(HCl)混合液進行第二次酸蝕,形成不規則且均勻的表面。For example, US Patent No. 6,491,723 discloses a surface treatment method for a metal implant, the surface treatment step of which is first acid etching using hydrofluoric acid (HF) to remove the surface natural oxide layer; A second acid etching was carried out with a high temperature sulfuric acid (H 2 SO 4 )/hydrochloric acid (HCl) mixture to form an irregular and uniform surface.

然而氫氟酸是極危險的化學品,可經由口、鼻、眼或皮膚等途徑進入人體,造成低血鈣、低血鎂、肺水腫、代謝性酸中毒、心室性心律不整、甚至死亡等嚴重的全身性中毒症狀。而硫酸/鹽酸混合液為兩種強酸之混合,在配製時會產生劇烈放熱的脫水反應,容易使操作人員造成灼傷。However, hydrofluoric acid is a very dangerous chemical that can enter the body through the mouth, nose, eyes or skin, causing hypocalcemia, hypomagnesemia, pulmonary edema, metabolic acidosis, ventricular arrhythmia, and even death. Severe symptoms of systemic poisoning. The sulfuric acid/hydrochloric acid mixture is a mixture of two strong acids, which will produce a vigorous exothermic dehydration reaction during preparation, which is easy to cause burns to the operator.

有鑑於此,本發明提供一種金屬植入物的表面處理方法,用以降低表面處理過程中對人體有危險傷害的機會,並增加生物相容性之效果。In view of the above, the present invention provides a surface treatment method for metal implants, which reduces the chance of dangerous damage to the human body during surface treatment and increases the biocompatibility effect.

本發明另提出一種金屬植入物的表面處理方法,金屬植入物之表面具有一第一氧化層,其步驟包括:首先,將金屬植入物浸泡於一第一酸液中以去除第一氧化層。之後,將浸泡於第一酸液中之金屬植入物取出,再把金屬植入物浸泡於一第二酸液中,第二酸液包含一過氧化氫,用以粗糙化金屬植入物之表面並形成一第二氧化層。最後,將金屬植入物自第二酸液中取出。The invention further provides a surface treatment method for a metal implant, the surface of the metal implant having a first oxide layer, the steps comprising: first, immersing the metal implant in a first acid solution to remove the first Oxide layer. Thereafter, the metal implant immersed in the first acid solution is taken out, and the metal implant is immersed in a second acid solution containing a hydrogen peroxide for roughening the metal implant. The surface forms a second oxide layer. Finally, the metal implant is removed from the second acid solution.

在本發明一實施例中,其中第二氧化層之厚度大於10nm。In an embodiment of the invention, the thickness of the second oxide layer is greater than 10 nm.

在本發明一實施例中,其中金屬植入物之材質為一鈦金屬、一鈦合金或一含鈦元素之金屬。In an embodiment of the invention, the metal implant is made of a titanium metal, a titanium alloy or a metal containing a titanium element.

在本發明一實施例中,其中第二酸液更包括一硫酸或一鹽酸。In an embodiment of the invention, the second acid solution further comprises a sulfuric acid or a hydrochloric acid.

在本發明一實施例中,其中當第二酸液為過氧化氫與硫酸的混合酸時,其混合酸中的過氧化氫與硫酸之體積比為1:1~6:1,其中過氧化氫的濃度為30%,硫酸的濃度為95%。In an embodiment of the invention, wherein the second acid solution is a mixed acid of hydrogen peroxide and sulfuric acid, the volume ratio of hydrogen peroxide to sulfuric acid in the mixed acid is 1:1 to 6:1, wherein peroxidation The concentration of hydrogen is 30% and the concentration of sulfuric acid is 95%.

在本發明一實施例中,其中當第二酸液為過氧化氫與鹽酸的混合酸時,其混合酸中的過氧化氫與鹽酸之體積比為1:1~6:1,其中過氧化氫的濃度為30%,鹽酸的濃度為37%。In an embodiment of the invention, wherein the second acid solution is a mixed acid of hydrogen peroxide and hydrochloric acid, the volume ratio of hydrogen peroxide to hydrochloric acid in the mixed acid is 1:1 to 6:1, wherein peroxidation The concentration of hydrogen was 30% and the concentration of hydrochloric acid was 37%.

在本發明一實施例中,其中浸泡於第一酸液之時間為數分鐘至60分鐘。In an embodiment of the invention, the time during which the first acid solution is immersed is from several minutes to 60 minutes.

在本發明一實施例中,其中浸泡於第二酸液之時間為數分鐘至24小時。In an embodiment of the invention, the time during which the second acid solution is immersed is from several minutes to 24 hours.

在本發明一實施例中,其中浸泡於第一酸液時之處理溫度為60℃至80℃。In an embodiment of the invention, the treatment temperature when immersed in the first acid solution is from 60 ° C to 80 ° C.

在本發明一實施例中,其中浸泡於第二酸液時之處理溫度為20℃至80℃。In an embodiment of the invention, the treatment temperature when immersed in the second acid solution is from 20 ° C to 80 ° C.

在本發明一實施例中,其中第一酸液係選自由硝酸、鹽酸與硫酸所組成之群組。In an embodiment of the invention, the first acid liquid is selected from the group consisting of nitric acid, hydrochloric acid and sulfuric acid.

在本發明一實施例中,其中金屬植入物浸泡於該第一酸液時,其表面形成複數微米級的粗糙孔洞。In an embodiment of the invention, wherein the metal implant is immersed in the first acid solution, a rough hole of a plurality of micrometers is formed on the surface thereof.

在本發明一實施例中,其中形成於該金屬植入物表面之第二氧化層之表面粗糙度(Ra值)約為0.3~0.7μm。In an embodiment of the invention, the surface roughness (Ra value) of the second oxide layer formed on the surface of the metal implant is about 0.3 to 0.7 μm.

綜上所述,本發明首先以高溫的鹽酸或硫酸進行鈦金屬植入物表面粗糙化處理,使其具有微米級的孔洞。此階段主要是利用鹽酸或硫酸來取代具有高危險性之氫氟酸進行第一次酸蝕,並同時製造粗糙表面。並以室溫下溫和反應的過氧化氫(H2 O2 )/硫酸(H2 SO4 )混合液,取代高溫操作產生劇烈反應的鹽酸/硫酸混合液進行第二次酸蝕,如此,可降低對人體有危險傷害的機會。In summary, the present invention firstly roughens the surface of the titanium metal implant with high-temperature hydrochloric acid or sulfuric acid to have micron-sized pores. At this stage, hydrochloric acid or sulfuric acid is mainly used to replace the highly dangerous hydrofluoric acid for the first etching, and at the same time, a rough surface is produced. And the mixture of hydrogen peroxide (H 2 O 2 )/sulfuric acid (H 2 SO 4 ) which is mildly reacted at room temperature is used for the second acid etching instead of the hydrochloric acid/sulfuric acid mixture which is subjected to high temperature operation to produce a vigorous reaction, so that Reduce the chance of dangerous harm to the human body.

為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.

圖1是本發明一實施例之金屬植入物表面處理方法的流程圖。其中,金屬植入物之材質可為一鈦金屬、一鈦合金或一含鈦元素之金屬,而這些金屬植人物與空氣接觸後,其表面通常都具有一氧化層,此氧化層可為一氧化鈦層(TiO2 )。1 is a flow chart of a method of surface treatment of a metal implant according to an embodiment of the present invention. Wherein, the metal implant material may be a titanium metal, a titanium alloy or a metal containing titanium element, and after the metal implants are in contact with air, the surface thereof generally has an oxide layer, and the oxide layer may be a titanium oxide layer (TiO 2).

請參閱圖1,金屬植入物表面處理的方法包括以下步驟:首先,進行一第一次酸蝕處理(步驟S100),係將金屬植入物浸泡於重量百分比為37%的鹽酸(HCl)溶液中,其中金屬植入物可以是完全浸泡或局部浸泡於上述鹽酸(HCl)溶液,以去除金屬植入物表面氧化層,並於表面形成複數微米級的粗糙孔洞,而有關第一次酸蝕處理的操作參數,可以是讓金屬植入物在溫度為60~80℃的鹽酸溶液中作用數分鐘至60分鐘,於本實施例,金屬植入物於鹽酸溶液中之作用時間為10~30分鐘。接著,將金屬植入物依序進行潤洗與中和的程序,其中潤洗程序可以採用超純水進行清洗並濕潤。Referring to FIG. 1, the method for surface treatment of a metal implant comprises the following steps: First, performing a first acid etching treatment (step S100), immersing the metal implant in 37% by weight hydrochloric acid (HCl). In the solution, wherein the metal implant may be completely immersed or partially immersed in the above hydrochloric acid (HCl) solution to remove the surface oxide layer of the metal implant and form a plurality of micron-sized rough pores on the surface, and the first acid is related. The operating parameter of the etch treatment may be that the metal implant is allowed to act in a hydrochloric acid solution at a temperature of 60-80 ° C for several minutes to 60 minutes. In this embodiment, the action time of the metal implant in the hydrochloric acid solution is 10~ 30 minutes. Next, the metal implant is sequentially subjected to a process of rinsing and neutralizing, wherein the rinsing process can be washed and moistened with ultrapure water.

第一次酸蝕處理(步驟S100)之後,進行一第二次酸蝕處理(步驟S200),即將經過鹽酸酸蝕並中和處理過的金屬植入物,浸泡於一混合酸當中。其中,混合酸可為過氧化氫(30%)/硫酸(95%)的混合酸或是過氧化氫(30%)/鹽酸(37%)的混合酸。After the first acid etching treatment (step S100), a second etching treatment (step S200) is performed, that is, the metal implant which has been subjected to hydrochloric acid etching and neutralization treatment is immersed in a mixed acid. Among them, the mixed acid may be a mixed acid of hydrogen peroxide (30%) / sulfuric acid (95%) or a mixed acid of hydrogen peroxide (30%) / hydrochloric acid (37%).

須特別說明的是,過氧化氫(30%)/硫酸(95%)的混合酸為等體積比例混合或是不同體積比例混合,其中較佳的是過氧化氫與硫酸之體積比為1:1~6:1。同理,過氧化氫(30%)/鹽酸(37%)的混合酸為等體積比例混合或是不同體積比例混合,其中較佳的是過氧化氫與鹽酸之體積比為1:1~6:1。It should be particularly noted that the mixed acid of hydrogen peroxide (30%) / sulfuric acid (95%) is mixed in an equal volume ratio or mixed in different volume ratios, wherein a volume ratio of hydrogen peroxide to sulfuric acid is preferably 1: 1~6:1. Similarly, the mixed acid of hydrogen peroxide (30%) / hydrochloric acid (37%) is mixed in equal volume ratio or mixed in different volume ratios, wherein the volume ratio of hydrogen peroxide to hydrochloric acid is preferably 1:1~6. :1.

有關第二次酸蝕處理的操作參數,可以是讓金屬植入物在室溫的混合酸溶液中作用數分鐘至24小時,於本實施例,金屬植入物於混合酸溶液中之作用時間為-10分鐘,最後再進行潤洗、中和以及風乾等動作,其中潤洗程序可以採用超純水進行清洗並濕潤。The operating parameter for the second etching treatment may be that the metal implant is allowed to act in a mixed acid solution at room temperature for several minutes to 24 hours. In this embodiment, the action time of the metal implant in the mixed acid solution For -10 minutes, the last step is to rinse, neutralize and air dry. The washing process can be cleaned and moistened with ultrapure water.

經第二次酸蝕處理過後的金屬植入物,其表面會形成一第二氧化層,此第二氧化層可為一氧化鈦層(TiO2 )。其中,須特別說明的是經酸蝕處理後所產生的氧化層厚度,其大小為大於10nm,與金屬植入物經酸蝕處理前所產生的自然氧化層厚度有明顯差別。After the second etching treatment, the metal implant has a second oxide layer formed on the surface thereof, and the second oxide layer may be a titanium oxide layer (TiO 2 ). Among them, it is necessary to specifically specify the thickness of the oxide layer produced by the acid etching treatment, the size of which is greater than 10 nm, which is significantly different from the thickness of the natural oxide layer produced by the metal implant before the acid etching treatment.

請分別參閱圖2A及圖2B,其分別為經上述流程處理後之金屬植入物的表面SEM圖,其SEM圖倍率分別為2500倍及5K倍。如圖2A及2B所示,發現金屬植入物表面是由複數個呈現略尖的錐狀單體形成之不規則且均勻的粗糙表面,各錐狀單體之間約略相距1~3μm。表面粗糙度(Ra值)約為0.3~0.7μm。Please refer to FIG. 2A and FIG. 2B respectively, which are respectively the surface SEM images of the metal implants treated by the above process, and the SEM magnifications are 2500 times and 5K times, respectively. As shown in Figs. 2A and 2B, it was found that the surface of the metal implant was an irregular and uniform rough surface formed by a plurality of tapered monomers which were slightly pointed, and each of the tapered monomers was approximately 1 to 3 μm apart. The surface roughness (Ra value) is about 0.3 to 0.7 μm.

簡單來說,本發明之第一階段酸蝕步驟主要以高溫的第一酸液,如鹽酸,來取代氫氟酸進行表面自然氧化層的去除,並於表面製造微米級的粗糙孔洞,而第二階段酸蝕步驟主要是以第二酸液,如在室溫下的過氧化氫/硫酸混合液,進行第二次酸蝕處理,進行去氧化/再氧化處理,使金屬植入物表面生成一層均勻純淨的氧化層。如此,不僅可避免在使用酸液或配製酸液時產生的劇烈反應,減少危險性,且金屬植入物表面生成一層均勻純淨的氧化層,可用以增加植入物之生物相容性。雖然本發明以前述實施例揭露如上,然其並非用以限定本發明,任何熟習相關技藝者,在不脫離本發明之精神和範圍內,所作更動與潤飾之等效替換,仍為本發明之專利保護範圍內。Briefly, the first stage of the acid etching step of the present invention mainly replaces the hydrofluoric acid with a first acid solution such as hydrochloric acid at a high temperature to remove the surface natural oxide layer, and produces a micron-sized rough hole on the surface, and the first The second-stage acid etching step is mainly carried out by a second acid solution, such as a hydrogen peroxide/sulfuric acid mixture at room temperature, for a second acid etching treatment to perform deoxidation/reoxidation treatment to form a surface of the metal implant. A uniform layer of oxide. In this way, not only the violent reaction generated when using the acid solution or the acid solution is avoided, the risk is reduced, and a uniform and pure oxide layer is formed on the surface of the metal implant, which can be used to increase the biocompatibility of the implant. While the present invention has been described above in the foregoing embodiments, it is not intended to limit the invention, and the equivalents of the modification and retouching are still in the present invention without departing from the spirit and scope of the invention. Within the scope of patent protection.

S100、S200...步驟流程S100, S200. . . Step flow

圖1是本發明金屬植入物表面處理方法的流程圖;以及Figure 1 is a flow chart of a method of surface treatment of a metal implant of the present invention;

圖2A及圖2B是金屬植入物的表面SEM圖。2A and 2B are surface SEM images of metal implants.

S100、S200...步驟流程S100, S200. . . Step flow

Claims (10)

一種金屬植入物的表面處理方法,該金屬植入物之表面具有一第一氧化層,其步驟包括:將該金屬植入物浸泡於一第一酸液中以去除該第一氧化層,其中該第一酸液係選自由鹽酸、硫酸所組成之群組;將浸泡於該第一酸液中之該金屬植入物取出,再把該金屬植入物浸泡於一第二酸液中,該第二酸液包含一過氧化氫與一鹽酸,用以粗糙化該金屬植入物之表面並形成一第二氧化層;以及將該金屬植入物自該第二酸液中取出。 A surface treatment method for a metal implant, the surface of the metal implant having a first oxide layer, the step comprising: immersing the metal implant in a first acid solution to remove the first oxide layer, Wherein the first acid liquid is selected from the group consisting of hydrochloric acid and sulfuric acid; the metal implant immersed in the first acid liquid is taken out, and the metal implant is immersed in a second acid liquid. The second acid solution comprises a hydrogen peroxide and a hydrochloric acid for roughening the surface of the metal implant and forming a second oxide layer; and removing the metal implant from the second acid solution. 如申請專利範圍第1項所述之表面處理方法,其中該第二氧化層之厚度大於10nm。 The surface treatment method of claim 1, wherein the second oxide layer has a thickness greater than 10 nm. 如申請專利範圍第1項所述之表面處理方法,其中該金屬植入物之材質為一鈦金屬、一鈦合金或一含鈦元素之金屬。 The surface treatment method according to claim 1, wherein the metal implant is made of a titanium metal, a titanium alloy or a metal containing a titanium element. 如申請專利範圍第1項所述之表面處理方法,其中當該第二酸液為過氧化氫與鹽酸的混合酸時,其混合酸中的過氧化氫與鹽酸之體積比為1:1~6:1,其中過氧化氫的濃度為30%,鹽酸的濃度為37%。 The surface treatment method according to claim 1, wherein when the second acid solution is a mixed acid of hydrogen peroxide and hydrochloric acid, the volume ratio of hydrogen peroxide to hydrochloric acid in the mixed acid is 1:1. 6:1, wherein the concentration of hydrogen peroxide is 30%, and the concentration of hydrochloric acid is 37%. 如申請專利範圍第1項所述之表面處理方法,其中浸泡於該第一酸液之時間為數分鐘至60分鐘。 The surface treatment method according to claim 1, wherein the time of immersing in the first acid solution is from several minutes to 60 minutes. 如申請專利範圍第1項所述之表面處理方法,其中浸泡於該第二酸液之時間為數分鐘至24小時。 The surface treatment method according to claim 1, wherein the time of immersing in the second acid solution is from several minutes to 24 hours. 如申請專利範圍第1項所述之表面處理方法,其中浸泡於該第一酸液時之處理溫度為60℃至80℃。 The surface treatment method according to claim 1, wherein the treatment temperature when immersed in the first acid solution is from 60 ° C to 80 ° C. 如申請專利範圍第1項所述之表面處理方法,其中浸泡於該第二酸液時之處理溫度為20℃至80℃。 The surface treatment method according to claim 1, wherein the treatment temperature when immersed in the second acid solution is from 20 ° C to 80 ° C. 如申請專利範圍第1項所述之表面處理方法,其中該金屬植入物浸泡於該第一酸液時,其表面形成複數微米級的粗糙孔洞。 The surface treatment method according to claim 1, wherein the metal implant is immersed in the first acid liquid, and a rough hole of a plurality of micrometers is formed on the surface thereof. 如申請專利範圍第1項所述之表面處理方法,其中形成於該金屬植入物表面之第二氧化層之表面粗糙度(Ra值)約為0.3~0.7μm。 The surface treatment method according to claim 1, wherein a surface roughness (Ra value) of the second oxide layer formed on the surface of the metal implant is about 0.3 to 0.7 μm.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6491723B1 (en) * 1996-02-27 2002-12-10 Implant Innovations, Inc. Implant surface preparation method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6491723B1 (en) * 1996-02-27 2002-12-10 Implant Innovations, Inc. Implant surface preparation method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
蔣滔, 程祥榮, 夏海斌, "兔骨髓基質細胞在不同純鈦表面的早期黏附", 華藝線上圖書館, 口腔醫學研究, 20卷3期, 2004.6.28。 *

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