TW200922529A - Artificial implant with voids on surface thereof and method for producing the same - Google Patents

Abstract

The present invention provides an artificial implant with voids on the surface thereof. The surface of implant at least partially includes a porous structure, which is characterized that the porous structure substantially is a titanium oxide film nano and/or micro void structure. Furthermore, the void structure at least partially includes voids substantially in size of 10 nanometers to 10 micrometers. The thickness of titanium oxide film is 0.1 to 1 micrometer. The present invention also includes a method of forming a titanium oxide film nano and/or micro void structure on the surface of artificial implant.

Description

200922529 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an artificial vegetable tanned surface having a hole on the surface, and a method for forming a pore structure on the surface of the implant; in particular, the surface has a titanium oxide film and / or micro-porous structure of the artificial implant, and a method of forming a titanium oxide film nano and/or micron pore structure on the surface of the implant. [Prior Art] Titanium has a very good evaluation of the biocompatibility (Bi〇c(10) patibiUty) of the human body, and is very suitable for human body implants. TW_491714 (Application No. 88114518, the same in U.S. Patent No. 6, 485, 521) teaches: an artificial implant having a hole in a titanium metal surface and a manufacturing method thereof, but the size of the opening of the surface hole of the invention is丨〇 to 8 〇〇 micron, although it has the function of proliferating bone cells in the surface pores, but the initial climbing behavior, proliferation and differentiation ability of the cells is still insufficient, and the implants made according to this method can not effectively improve Antibacterial ability, reduce immune response and avoid microbial infection. After long-term research, the inventors found that if the porous structure of the surface of the titanium metal implant has a pore size of 10 nm to 10 μm, and the porous structure is a titanium oxide film nanometer and/or a micron pore structure, it can be greatly improved. The initial adherence behavior, proliferation and differentiation ability of the cells can effectively improve the antibacterial ability, reduce the immune response and avoid microbial infection. SUMMARY OF THE INVENTION One object of the present invention is to provide an artificial implant which can greatly enhance the initial climbing behavior, proliferation and differentiation of cells, and has pores on the surface. Another object of the present invention is to provide an artificial implant which is effective in improving the antibacterial ability and which avoids microbial infection and which has pores on the surface. Still another object of the present invention is to provide an artificial implant which can reduce an immune response and has pores on its surface. A further object of the present invention is to provide an artificial implant having anchoring effect and having a hole in its surface. It is still another object of the present invention to provide an artificial implant having a pore structure of 1 〇 nanometer to 1 微米 micrometer on its surface. A further object of the present invention is to provide an artificial implant having a titanium oxide film nano- and/or micro-hole structure on its surface. A further object of the present invention is to provide a method for imparting a pore structure of from 〇 nanometer to 1 〇 micron on the surface of an artificial implant. A further object of the present invention is to provide a method for imparting a titanium oxide film nano- and/or micro-hole structure to the surface of an artificial implant. It is still another object of the present invention to provide a method for artificially increasing the initial climbing behavior, proliferation and differentiation of an artificial plant by surface modification. Still another object of the present invention is to provide a method for artificially improving the antibacterial ability and preventing microbial infection by surface modification by surface modification. A further object of the present invention is to provide a method for reducing the immune response of an artificial implant by surface modification. A further object of the present invention is to provide a method for imparting a tinning effect to an artificial implant by surface modification. It is still another object of the present invention to provide an easily controlled artificial implant surface modification method. 6 200922529 Each type of artificial surface with a hole on the surface is at least partially and right-handed, planted with gallbladder. The implant has a crater structure, which is characterized by oxidized sulphur, 3⁄4 amine w 孔 pore structure is substantially oxy titanium The structure of the hole, and the structure of the hole is at least Qiu, and is essentially at least 〇 毕 $ $ $ Λ 傅 傅. The pore size of the pores is μ + not red to 10 microns, and the thickness of the titanium oxide film is (JJ to ^ artificial implants are suitable for orthopedics and / or teeth /, family. 卞 especially suitable for teeth

The above-mentioned so-called implant surface has at least part of a porous planted rough surface to form a titanium oxide film, and the titanium oxide film can be Τ10, and its h value is 〗·2.0 to 2.0 (ie at least half: no, to 20, hy Soil / take 1ι (^2> special film) '15 is preferred (ie at least 75% to form Τι〇2 film), preferably (ie at least 90% to form Tl〇2 film). For the above microporous structure The size of the hole is good, u in too L 'd... card to 1 〇 micron is better than 10 nm to 1 micron, best. The surface of artificial implant is formed by 10 nm to 100 nm. A method for gas-rolling titanium nano-nano and/or micro-porous structures, comprising: an anodizing method for forming a porous structure on the surface of the artificial implant; characterized in that the porous structure is substantially q A 4 The structure of the amine and/or the city hole, wherein the value of x is κ, 丨, the value of κο to 2·〇, and the pore structure is to y. The size of the pore is substantially 丨〇 乎 不 不 至1 〇 micron, titanium oxide film thickness · 1 micron to 1 micron. The above method 'to enter ' a ^ Jr nj- J-TT m in the % pole It is preferred to include a cathode treatment 200922529. The cathode treatment is used to at least partially form titanium hydride (TiH2) on the surface of the titanium metal of the artificial implant, which is treated before the anode treatment. The treatment of hydrogen on the surface of the titanium metal is preferably carried out by a cathode treatment for forming a specific surface of the metal to a titanium hydride (TiH2); that is, the surface is preferably 〇^ ι n to 0.3. Clever Tl, where y is 〇 to u, to 〇: the extreme treatment method is based on the acid solution as the treatment liquid to produce nitriding on the surface of the implant. The acid solution is based on Linshe and hydrochloric acid or sulfuric acid. Preferably, hydrofluoric acid is used for more processing time with HO minutes as /, and reading with °. 5 is the best. ώ _ , ' is 仫, 5 to 15 minutes is the best. Processing current is also Bu 30 is preferred, and 5] is the best. Electric: The anode treatment is any which can form the surface of the artificial implant into titanium film and/or the material of the semi-emulsion. 'In order to make the surface of the yin: the anode formed with a titanium oxide film nanostructure as Preferably, the surface formed by the negative-yield titanium oxide film has a structure of from about 10,000 Å to 1 η or from a pore structure of the rice and the pore size is substantially 10 ... to 10 μm, and the thickness of the titanium oxide film is better. The oxygen at the extreme pole of the 4 h.1 to 1 test is left to make the titanium oxide film used to remove the titanium oxide. The oxygen anode treatment method for the y sub-degree and the hole size is The alkaline solution is used as the production y surface to produce shame A # u as the treatment liquid to make the titanium implant sodium and 哎1P ^ _ fly sodium, sodium fluoride 'carbonate solution is more 俨.w 7 匕 sodium plus Sodium hydride or its buffer is preferably formed into a solution of age 12, which can be shaped as a solution of 200922529 into -9-9 〇 为 玄 玄 玄 玄 玄 玄 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 60 The degree is better than 1 soil, the spoon is a little and 1 soil, 〗 〖~15 is the best. The above porous structure means that the oxidized zirconia can form a titanium oxide binding film on the Tl_I surface, and the lesser half is opened into a τ.η "X " 〆, where the value of X is h〇 to 2.0 ( That is, to y 千 Τ Τ 〇 〇 2 溥 film), the formation of Tl 〇 L5 to 2 · 〇 is preferred (ie at least 75% hurricane 1 υ 2 溥Μ), to 1 8~2 〇 or s film). More preferably (i.e., at least 90% of the above-mentioned pore size and film thickness of Ti〇2 are formed as described above. Preferably, the cathode treatment is carried out by using a ruthenium plating solution for 25). ^. Liaojing as ASD, 'Lid, the current density is 0. Bu 1〇A6D '% pole treatment with 〇1 °c ^, ra ^ sodium oxyhydroxide as a plating solution at 25: degrees Next, the current density of the inlet is 〇. 2 2 ASD. Preferably, during the cathode treatment, the f is applied to the temperature of 25 t m _ 3 M sulfuric acid as the mineral liquid and the current density of the I input is 0. 10 ASD, % pole treatment using 〇. i~5M fluorination, w butyl, s nano as a bath at 25 ° C (four degrees), the current density of the input is 0.1~20ASD. At the cathode treatment, it is applied to 25 t At the temperature, the M sulfuric acid is used as the silver liquid. ± The scoring power w is 0. Bu 10 ASD, and the anodizing treatment is performed by using q 7 _ _ & 25 X: In the case of the dish, the current density is 〇·卜2〇Α^. It is preferable that the cathode is treated with y from m 乂 U. Bu 3 Wt% hydrofluoric acid as the plating solution. At a temperature of 25 t, Π 1 1 Λ〇 Λ〇 通 通 通 通 通 通 通 通 通 通 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 卜 卜 卜 卜 卜 卜 卜 卜 卜 卜 卜 卜5/q acts as a bath on the 25th. The current density of 200922529 is 〇. Bu 20ASD. It is better to use the cathode treatment solution at 0, t% hydrochloric acid as When the money is anodized, n~7M mountain' is used. Sodium sulphate is mixed with sodium fluoride 〇. As A sputum acts on 25 t π _·χ. , Α X as the current under plating A a 'nucleus The density is 〇·1~2〇ASD. After the 人 疋 人 人 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 喷 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人Liquid work, In addition, the current density is 〇. 1~10ASD, Yang Wang Wang 0" wood used 卜. Bu 7M sodium hydroxide as a plating solution on the 25. The degree of current density under the - degree is 0.1~2_ 'Currently' 人工' artificial implants are used after blasting or electron beam or electric discharge machining, and then used for cathode treatment. 9, 铋 is used for 0·1~3 Μ sulfuric acid as the plating solution. Next, the current density of the inlet is 〇.1~10ASD, and the anode treatment time can be carried out by using 〇. 5 5 Μ sodium fluoride as a mineral liquid at a temperature of 25 °, and the current density is 0.1 to 20 ASD. From the slave (four) X ' artificial implants after sandblasting or electron beam or electrical discharge machining 1, 1. When the cathode treatment is carried out, Q:Bu 3 M 4 acid is used as the mineral liquid at the temperature of c, and the current density is 〇l~i〇asd, and the anode eucalyptus is used as 矿~~7 Μ The bath is applied at a temperature of 25 〇c and the current density is 〇. 2〇ASI). ^Awkward 疋, the artificial implant is subjected to sandblasting or electron beam or electric discharge processing, and then the cathode is treated with A a acid as the clock liquid at a temperature of 25 C, and the current density is 〇·卜1〇AS]), anode treatment with °, " Μ Μ 混合 mixed with sodium fluoride. 5% 作作 10 200922529 The current density of the plating solution is 25 at its temperature.

ASD. U is preferably 'the artificial implant is subjected to sandblasting or electron beam or electric discharge processing, and then used for the cathode treatment. ~~3. 〇wt% hydrochloric acid is used as the plating solution to act at the temperature of 25 C. The current density is 〇1~1〇asd, and the anode treatment is 〇·卜 7M sodium carbonate mixed with sodium fluoride 〇• Bu as the liquid solution, at a temperature of 25 C, the current density is 〇. Don't be like eight. [Embodiment] As shown in Fig. 1(a) and Fig. 1(b), the artificial implant (1〇〇) can form an oxidized film (110) and a porous hole on the surface after the cathode treatment and the anode treatment of the present invention. structure. Please refer to Figure 2(4) for the artificial implant (the lake can be applied to dentistry, such as this artificial (4) (1) (10) ^ 龈 ((4) is placed in the alveolar (closed, but in the normal teeth (exhaustion, at this time, new bone cells) (130) can be proliferated on the surface of the artificial implant (ι〇〇), and the artificial implant U〇〇) is firmly combined with the * groove (160), and the artificial crown ((10)) is bonded to the artificial implant (100). The pore size of the titanium oxide film prepared by the preparation condition disk of the following examples was as shown in Table 1: Table 1 The electrolyte concentration of the hole in the example at the cathode (M) Current Density (ASD) Time - Temperature 1 Nano HF 0.5 5 10 25 2 Nai HF 0.5 5 J 10 25 — Meter 3 Nano h2so4 1 5 One To~ Yang

Electrolyte concentration (M) | Current density (ASD) 5 m 5 — 15 1 15 31 200922529 4 Nai micron h2so4 1 5 10 25 NaF 1 15 10 25 5 Nano h2so4 1 5 10 25 NaOH 5 15 10 25 6 Nai micron H2so4 1 5 10 25 NaOH 5 15 10 25 7 Nano HF 0.5 5 10 25 NaOH + NaF 5+1 15 10 25 8 Nano HF 0.5 5 10 25 NaOH + NaF 5+1 15 10 25 9 Nano HC1 2 5 10 25 Na^+NaF 3+1 15 10 25 10 nanometer HC1 2 5 10 25 NajCOj+NaF 3+1 15 10 25 Example 1: Washed base metal implant (as shown in Figure 1 (a)) Cathodic polarization was carried out by placing the hydrofluoric acid (HF) at the concentration listed in Table 1 as a plating solution at the cathode (anode is a platinum plate). The temperature, current density, and time control in the cathode treatment are listed in Table 1, respectively. The above-mentioned cathodic treated implant was quickly placed on the anode (the cathode was a platinum plate), and anodic polarization was carried out under the following conditions. The current density indicated in Table 1 at the temperatures listed in Table 1 at the concentrations listed in Table 1 (NaOH) t' are listed in Table 1. The result is an implant as shown in Figure 2. The surface structure is shown in Figure 3 (a). Example 2: The washed titanium metal implant (as shown in Fig. (a)) is subjected to sand blasting or son beam or electric discharge processing, and then subjected to sand blasting or electron beam or electric discharge processing. The body (shown in Figure la) was cleaned and placed on the cathode 12 200922529 (anode is a platinum plate), and the concentration of hydrofluoric acid (HF) listed in Table 1 was used as a mineral liquid for cathodic polarization. In the cathode treatment, temperature, current density, and time control are listed in Table 1. The above-mentioned cathodic treated implant was quickly placed on the anode (the cathode was a platinum plate)' and anodic polarization was carried out under the following conditions. In the sodium oxyhydroxide (NaOH) at the concentrations listed in Table 1, the currents listed in Table 1 were controlled by the temperatures listed in Table 1 as shown in Table 1. As a result, an implant as shown in Fig. 2 was produced. The surface structure is shown in Figure 3 (b). Example 3: The washed titanium metal implants (as shown in Fig. 1(a)) were respectively placed on the cathode (the anode was a platinum plate), and the sulfuric acid (HnSOi)# at the concentration listed in Table 1 was used as a plating solution. Cathodic polarization. The temperature, current density, and time control in the cathode treatment are listed in Table 1, respectively. The above-mentioned cathodic treated implant was quickly placed on the anode (the cathode was a platinum plate)' and anodic polarization was carried out under the following conditions. The concentrations listed in Table 1 for the fluorines listed in Table 1 are also listed in Table 1. As a result, an implant as shown in Fig. 2 was produced. The surface structure is as shown in Fig. 3(c). Example 4: The cleaned titanium metal implant (as shown in Figure 1 (a)) is passed through a mouth sand or electron beam or electrical discharge, and then subjected to sandblasting or electron beam or electric discharge machining. The metal implants (as shown in Figure i(a)) were cleaned and placed on the cathode 13 200922529 (anode is a platinum plate), and the cathodic polarization was carried out with the concentration of sulfuric acid listed in Table 1 (Li 4i# as the plating solution). In the cathode treatment, the temperature, current density, and time control are respectively listed in Table 1. The cathodically treated implant was quickly placed on the anode (the cathode was a platinum plate), and anodic polarization was performed under the following conditions. The listed concentrations of the _, in the temperature listed in Table 1, the current density listed in Table 1, the time control is listed in Table 1. The result is the implant shown in Figure 2. Surface structure as in the first 3 (d) Fig. Example 5: The washed titanium metal implants (as shown in Figure 1 (a)) are placed at the cathode (the anode is a platinum plate), and the concentration of sulfuric acid dSOd listed in Table 1 is used. Plating solution _ — Cathodic polarization. In the cathode treatment, the temperature 'current density and time control are listed in Table 1. The cathodically treated implant was quickly placed on the anode (the cathode was a platinum plate)' and anodicly polarized under the following conditions. The hydrogen in the Hande listed in Table 1 was at the temperature listed in Table 1. The current mobility listed in 1 and the time control are listed in Table 1. The result is an implant as shown in Fig. 2. The surface structure is as shown in Fig. 3(e). Example 6: The washed titanium metal implant (as shown in Figure 1 (a)) After blasting or electron beam or electrical discharge, the titanium metal implant after sandblasting or electron beam or electric discharge machining (as shown in Figure (a)) After cleaning, they are placed on the cathode 14 200922529 (anode is platinum), and the concentration of sulfuric acid (Η/Ορ as the plating solution in Table 1) is used for cathodic polarization. In the cathode treatment, the temperature, current density and time control are as follows. 1. The above-mentioned cathodic treated implants were quickly placed on the anode (cathode is a platinum plate)' and anodic polarization was carried out under the following conditions: 1 in the concentration listed in Table 1 'in Table 1' At the column temperature, the current density listed in Table 1 'time control is listed in Table 1. The result is The implant shown in Fig. 2. The surface structure is shown in Fig. 3(f). Example 7: The washed titanium metal implant (as shown in Fig. 1(a)) is placed at the cathode (the anode is platinum). The film was subjected to cathodic polarization using hydrofluoric acid (HF) at the concentration listed in Table i. The temperature, current density, and time control in the cathode treatment are listed in Table 1. The cathodic treated implants described above. , quickly placed at the anode (cathode is a platinum plate)' and anodic polarization under the following conditions. In the concentration listed in Table 惠 + & emulsified sodium (NaF + NaOH) _, at the temperature listed in Table 1. The current density 'time control' listed in Table 1 is listed in Table 1. As a result, the implant shown in Fig. 2 was produced. The surface structure is as shown in the third (g) diagram. Example 8: The washed titanium metal implant (as shown in Fig. (a)) is subjected to sandblasting or electron beam or electric discharge processing, and then subjected to sandblasting or electron beam or electric discharge processing of the titanium metal implant. (As shown in Figure 1(a)) After cleaning, it is placed on the cathode 15 200922529 (anode is platinum), and the concentration of fluorinated acid (HF) listed in Table i is used as the plating solution for cathodic polarization. In the cathode treatment, temperature, current density, and time control are listed in Table 1, respectively. The above-mentioned cathodic treated implant was quickly placed on the anode (the cathode was a platinum plate)' and anodic polarization was carried out under the following conditions. The current densities listed in Table 1 were obtained at the concentrations listed in Table 1 at the concentrations listed in Table 1 for Naf + Na2 + sodium hydroxide (NaF + NWin). The time control is as listed in Table 1. The results are as follows. The implant shown in Fig. 2. The surface structure is shown in Fig. 3(h). Example 9: The washed titanium metal implant (as shown in Fig. (a)) is placed at the cathode (the anode is platinum). The film was subjected to cathodic polarization using hydrochloric acid (HC1) at the concentration listed in Table 。. In the cathode treatment, the temperature, current density, and time control were respectively listed in Table 1. The above-mentioned cathodic treated implants were quickly Placed on the anode (the cathode is a platinum plate) and anodicly polarized under the following conditions. The concentrations listed in Table 1 are also in the range of Table 1 and are listed in Table 1. The current density and time control are listed in Table 2. The result is an implant as shown in Fig. 2. The surface structure is shown in Fig. 3 (Example): Example 1 0: The washed titanium metal implant (such as丨(a) shown in the figure) After sandblasting or electron beam or electric discharge machining, titanium after sandblasting or electron beam or electric discharge machining The genus (as shown in Figure 1 (a)) is cleaned and placed in the cathode 16 200922529 (anode is platinum), and the cathodic polarization is carried out using hydrochloric acid (HC1) at the concentration listed in Table 1 as the plating solution. During the treatment, the temperature, current density, and time control are respectively listed in Table 1. The above-mentioned cathodic treated implant was quickly placed on the anode (the cathode was a platinum plate), and anodic polarization was performed under the following conditions. In the column concentration, in the temperature of Table i, the current density listed in Table 1 is passed, and the time control is as shown in Figure 1. The result is as shown in Figure 2. The surface structure is as shown in Fig. 3(j). The result is an implant as shown in Fig. 2, in which the examples} to 1 are: scanning electron microscope observation, see Figs. 3(4) to 3(1), by: After the cathode treatment and the anodic treatment, the surface of the titanium implant can produce titanium oxide film nano and / micron pores, Η π . η + β too, and the pore size is 1 〇 To 10 microns, the thickness of the titanium oxide film is 〇1 to μm. Figure 4 shows the thickness of the titanium oxide layer in the implant by AES. Results: The surface of the implant was vertically elongated by the electron beam. The depth of the bombardment was deepened. The distribution of the milk atom was added between the oxygen f-fresh and the thickness of the oxide layer. Example 1 2: Similar to the method of the first example, The conditions are separately changed to change the concentration of the plating solution, the concentration, the implant, the system...M, and the anti-g effect of the implant on the large intestine rod::.1Μ·, °.5Μ, 1Μ, 1.5 (4), the result is as follows) Golden Staphylococcus aureus b. 17 200922529 The 6th line of the genus Corydalis (hw) is exposed to the surface of the implant after the contact with the microscope. The 丨 丨 ψ 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中On the film, the big wax protector ~ such as θ t king <植乃上之大知# 囷 囷 明显 明显 明显 明显 明显 明显 明显 明显 明显 明显 明显 明显 明显 明显 明显 明显 明显 明显Phytophthora and Implants Example 13: Figure 7 is a method in which five kinds of implants were prepared in a manner similar to the method of Example - and the preparation conditions were the concentration of the plating solution at the changing period, and the concentration was . · 1M, 〇·5 Μ, 1 Μ '1·5 Μ and 2 M, in the case of osteoblasts (10)_63) on the surface of the implants of the examples. Figure 8 shows the growth rate of osteoblasts (MG-63) on the surface of the implant. The progenitor cells are proliferated on the surface of the implant and the layer on the surface of the titanium metal; the membrane has M ′ and the relationship between the titanium and the bone is called 〇s se οι integration. In some studies and literatures, it has also been shown that the pore size and roughness of the surface of the material implanted in the object are closely related to the initial climbing, differentiation and differentiation of the cells. Another important problem of the implant is to raise the antibacterial force, improve the antibacterial ability, and effectively reduce the immune response and avoid microbial infection. The present invention is a method for improving the surface structure of the implant: especially a titanium metal after being subjected to cathodic treatment. The surface is made of titanium hydroxide and then anodized to produce porous titanium dioxide on the surface, which makes it an implant that promotes and accelerates osseointegration. It is characterized by a uniform layer of nanoporous titanium dioxide on the surface of the plant. In order to induce the inward differentiation of the osteoblasts of the 200922529, the growth rate of the osseointegration, and the speed of osseointegration, and the purpose of anodizing again, the fluoride is removed from the implant, and the invention is effective. Improve bone healing, while _ Mgong Yueshan s ^, gas scorpion release can improve the antibacterial ability of the implant, the most important role is to promote the role of bone in a mineralization, in addition to improving the operation of future implants In addition to the success rate, p 1 shortens the healing time of a head and effectively improves the stability of the implant. (An embodiment of the present invention further relates to a technique for promoting and accelerating osseointegration. After processing the implant surface, the W & surface has a three-dimensional nanoporous oxidizing capsule, and there is also a gas ion coating thereon. In addition, it can effectively guide the bone run and gather to make the bone grow into the implant body, and effectively promote and accelerate the osseointegration. It can effectively reduce the immune response and promote bone remineralization to improve the stability of the implant and improve the success of the operation. In the last two decades, with the advancement of scientific research, the development of biological materials and the accumulation of clinical knowledge, you have been able to achieve long-term stability with implants. The implants are implanted in the human body. Its biocompatibility is particularly important. If the implant is to have good biocompatibility (Bwccnnpamuny), the necessary condition is that when the implant is implanted, the human body cannot release or dissociate the toxic substances, causing lesions around the tissue. Causes coagulation (8) ood coaguuuu] at) or hemolysis (Hem〇) ysi phantom reaction, meaning that the implant needs to be stable and biocompatible. Titanium and strontium alloy implant surface oxygen When the layered structure and structure are transplanted into the human body, the porous oxide layer contributes to the inward growth of the human bone tissue', and the implant surface of the titanium metal and the titanium alloy can be quickly combined with the human bone group 19 200922529. Implanted in the human body without repulsion and high stability. For the cathodic treatment of Fuyang (test? Tian 乂 +, 刼桎 treatment, just before the implant surface $ stone _ >, electron beam processing With the micro-sense ^ ^ 冤 force seeking processing, so that the implant surface of the gods will make the subsequent cathode treatment and anode ^, the various processing methods are as follows. I preparation method one, porous Ke-Article ^ ^ . — Emulsified titanium is made by immersing titanium in a high-temperature trace of lye in a high-temperature lye, and then using ion implantation to drive both greens into the implant.蕤 Hunting to achieve antibacterial effect. Gas preparation method 2, preparation of porosity _ oxidation, ϋ π g β a titanium nitride film can be anodic emulsified and chemically etched titanium liquid, ft ft π 4 ' / / / package (I_ersing) a solution of sodium bismuth (NaOH) dissolved in alkaline,

Ak ? £ m t is a layer of porous titanium dioxide film' and then emulsified to the anti-® effect by ion implantation. f fluoride ion hits the human implant, thereby achieving the 'preparation mode three' use of the yarn to refine the titanium film, and then using the ion method 'X implant to produce porous dioxane to achieve antibacterial effect. The child chaos is inserted into the implant, thereby preparing the fourth method, using the electron beam titanium oxide film, and the porosity is generated on the #纟 implant to achieve the antibacterial effect. #压离子Into the implant, by the preparation method 5, using micro-discharge and titanium oxide _, the ion implanted on the implant to produce porosity, which achieves the antibacterial effect. The etched ion is driven into the implant, and the preparation method is six, the sawing is performed, and the acid is subjected to the cathodic treatment, and then the test is performed: ==: to utilize the "from the 仃 仃 极 乳化 , , 形 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 Titanium dioxide film, preferably, cathode hydrogenation with sulfuric acid, hydrogenation of bee λ feifei cathode is the most alkaline solution: alkaline treatment of cathode is the second best, anode of sodium and gasification mixture Oxidation == rationality is two: the anodizing solution of the sodium carbonate carbonate mixed solution, ^ u9 emulsified sodium and [simple description of the figure] to achieve the antibacterial effect. The uo diagram is a schematic diagram of the artificial implant Figure 1(b) is a schematic cross-sectional view of the emulsified titanium by means of cathodic treatment on the surface of the artificial implant to produce the nano-anodized method. The UO image is applied to the dental implant after the artificial implant surface is produced. Schematic diagram of the cross-section. The second figure of the titanium dioxide is the electron microscopy image of the surface of the artificial implant. v 'Xi Yusheng Titanium-titanium plant (a) ( j) is a different type of implant Surface structure is electrically connected After that, each stage of the 颂Ί 镜 mirror shot. Figure 4 # 乂 乂 _ degree results. ... 'plants through the Ou Jie energy spectrometer to detect the thickness of titanium oxide layer 5th map / ... plant implants on E. coli ("") and Golden Grape 21 200922529 Cocci (51. Antibacterial results. Fig. 6 is the variation of E. coli (昃c〇y/) observed by electron microscopy after contact on the surface of the implant. ' Figure 7 is Proliferation of osteoblasts (MG-63) on the surface of implants<Fig. 8 shows the growth rate of osteoblasts (MG_63) on the surface of implants [Main component symbol description] (1 0 0) Artificial implants ( 11 〇) titanium oxide film (120) artificial crown (1 30) new bone cells (140) normal teeth (1 50) gingiva (1 60) gullet 22

Claims (1)

200922529 X. Patent application scope: 1. An artificial implant having a hole on the surface, the surface of the implant is at least two:: a structure having a crater structure, wherein the porous structure is substantially a porous structure of titanium oxide film, and The pore structure has at least a portion of the pore size substantially from 10 nanometers to 1 micrometer. 2. A human implant having a hole on the surface as described in claim 1 wherein the pore structure is at least partially enlarged to a size of 1 micrometer. On the babe, the thickness of the titanium film on the surface of the second section of the patent range is as follows: / The thickness of the intermediate emulsified titanium film is from 01 μm to μm. - Zhishen: The person with a hole on the surface of the third paragraph of the patent scope, wherein the hole structure has at least part of the hole nanometer to 100 nm. The person has a thickness of 10 工 5 5 凊 凊 凊 凊 凊 凊 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = - a method for producing an artificial implant having a hole in a surface of a cathode, comprising: - anyang: a 'to make hydrogen on a surface of a titanium metal of an artificial implant; and the porous structure being substantially oxidized to form a porous structure, at least partially - Depends on the pore structure, and the pore structure 7 is substantially 10 nanometers in size. °The method of manufacturing plant implants mentioned in item 6 of the patent application scope, 1> 〇 nanometer to pore structure at least partially having a pore size of substantially 8, as described in claim 7 of the patent application, having a hole in the surface of the human body 23 200922529, wherein the pore structure is eight to 1 nanometer to 1 〇〇 Nano. The size of the D-knife hole is substantially 9, and the patent method of the δ item of the patent scope is used. In the cathode treatment, the person with the surface of the hole is used as the plating solution to the temperature of 25, 〇·卜3 Wt% hydrofluoric acid ASD 'anode treatment with ~7 μ also flow male, degree is 〇. Bu 10. At the temperature, the input current sodium acts as a plating solution on the 25 private machine in the degree of 0.1~20 ASD. For example, the method for preparing artificial implants in the scope of patent application is as follows: in the cathodic treatment, the plating solution with pores on the surface is used for the treatment of 2 5 、, Λ U · 1~3 Μ sulphuric acid. The access to the Emperor, * - ASD' anode treatment uses 〇 1~5M ~, the degree is . · Η〇 at the temperature, the current is applied as the plating solution on 25 t: the mountain is 〇. 1~20ASD . 1 1. If the method of artificial implants is as described in item 8 of the patent application scope, where the cathode treatment is used, ",? The hole acts as a mineral solution at a temperature of 25 t, with sulfuric acid as ASD, and anodization with 〇w, degree 4 〇. Bu 10 t: Wen Lu, s air sulphide as a bath for 25 degrees The current density of the underpass is 〇. ASD. 12 If the application method of the artificial implant in the 8th patent scope is applied, the surface of the ± ^ surface has the pore acid as the plating solution applied to the 25 t plus 3 wind fluorine 〇 1~l〇ASD, under the fork, the current is passed The density is 〇b & o·1^虱 虱 虱 混合 mixed sodium fluoride. Acted as a plating solution at 25. (:,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The temperature of the cathode as the clock solution...=0.1~reading the salt-.··············································· Just SD. At a temperature of 25 C, the current density of the inlet is 14. 4, as in the patent application of the third method of artificial implants, in which the surface of the person has a hole in the processing of the German s plant is thicker than sandblasted. Or after electron beam or electric discharge machining, when the cathode treatment is performed, the plating solution is applied to the temperature of 25 art, and ~3 wt% hydrofluoric acid is used as the 0.H0ASD' anode treatment. · Bu 2:: Current density For use at a temperature of 25 t, sodium is used as a plating solution for 15, "!! Current density is 〇·"_. °申μ:: m m i Q: the method of artificial implants, After the artificial implant is passed: = = : After the discharge is applied, the cathode is processed, and the "beam or liquid acts on the 2 At a temperature of 5 t, ·]~ sulfuric acid is used as a plating anode...·... gas enthalpy: as a two-density for the melon, <s sodium acts as a plating solution for 2 5 (.: , under the dish, access The current density is 〇. Bu 20ASD. 16. The method of artificial implants according to the scope of the patent application, wherein the artificial implants are sprayed;:: after the hole discharge processing, 'the cathode treatment is used to ' Or the electron beam or liquid acts at a temperature of 25 t, and the current of the sulfuric acid is used as the anode of the money. Q.HM hydroxide steel is used as the second 1...ASD, and the current density is 〇. Cong. For the preparation of 25 C 17' artificial implants with holes 25 200922529 as described in claim 10, 苴中# + + τ & /, implants are sandblasted or electric + bundles or After the electric discharge machining, 'do the cathode rabbit Zang Ge 柞 蚀, you use from m ^ 〇. Bu 3. 0 Wt% hydrofluoric acid as a plating solution on the 25. 〇 加 ^ ^ * L ASD, when anodizing Use Q l~7 Q U·1 & M 虱 gasification sodium mixed sodium fluoride 〇. 1~5% as a plating solution applied to 25 t , Tian itch π Acn 'current degree' current density is 〇. 1~20 khv 0 18, as described in the patent application scope 10, the method of artificial implants with holes on the surface, 苴中 ^ ' After being subjected to sand blasting or electron beam or electric discharge machining, the cathode is then used to hold the cathode for use. 0. 0. Wt% hydrochloric acid is used as a key solution at the temperature of - n ^ inAQn 9 c, and is introduced. Current density is 0·1 1 0ASD, n pole treatment n, rest 0. 1~7Μ sodium carbonate mixed sodium fluoride 0·b 5% as the plating solution acts at the temperature of c, the current density is 0 , 1 ~ 20ASD. XI. Schema: as the next page 26