TWI407264B - Microcomputer and its application - Google Patents

Microcomputer and its application Download PDF

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TWI407264B
TWI407264B TW098107718A TW98107718A TWI407264B TW I407264 B TWI407264 B TW I407264B TW 098107718 A TW098107718 A TW 098107718A TW 98107718 A TW98107718 A TW 98107718A TW I407264 B TWI407264 B TW I407264B
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substrate
layer
electron beam
ion beam
precursor
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TW201033746A (en
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Priority to US12/620,418 priority patent/US20100233437A1/en
Publication of TW201033746A publication Critical patent/TW201033746A/zh
Priority to US13/684,019 priority patent/US8679728B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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Description

微影機台及其應用
本發明係有關一種微影技術，特別是指一種應用於微影技術之電子束或離子束微影機台及其應用。
目前的先進微影製程係利用光學、電子束、奈米壓印的方式在特定的高分子塗層(其係對光線、電子束敏感之高分子材料)或者稱之為阻劑上經由化學反應或是熱流應力的變化來形成圖案，以作為後續圖形蝕刻轉移時所需的遮罩。但阻劑通常需要複雜的熱處理、曝光後顯影或者是脫膜等程序。此外，在高解析的微影技術中，阻劑的厚度往往不夠後續的蝕刻製程消耗，而進一步需要更抗蝕刻的薄膜作為遮罩，例如氮氧化矽硬質遮罩，再加上原本光學微影常用的底部抗反層塗層(BARC)，就有數層的薄膜需要沉積、處理與蝕刻。舉例來說，請參閱第1圖，其係目前先進浸潤式微影製程之蝕刻遮罩層結構的示意圖。由於為抵抗後續蝕刻製程上的消耗，因此蝕刻遮罩層10如圖所示需要兩層的硬質遮罩(ACL/SiON)12、14、一抗反射層(BRAC)16與一高分子塗層18，並且該蝕刻遮罩層10在曝光後還需經過高分子塗層18的曝光後烤、顯影、硬烤、抗反射層16與硬質遮罩層12、14之蝕刻、高分子塗層18與抗反射層16去除，最後在進行基材19的蝕刻。如此需經過共11到製程程序，因此製成步驟是相當繁瑣且耗時的，隨著製程上多進行一次製程階段，將提高製程異常與產品缺陷的可能性，而降低生產成果。
有鑑於此，本發明遂針對上述習知技術之缺失，提出一種微影機台及其應用，以有效克服上述之該等問題。
本發明之主要目的在提供一種微影機台及其應用，其利用電子束或離子束誘發前驅氣體或前驅層反應、沈積，以於基材上形成高精密的圖案層，以免去傳統上微影製程需光阻作為圖形轉移的媒介。
本發明之再一目的在提供一種微影機台及其應用，前驅氣體並不會與電子束或離子束未定義(也就是未照射)的區域產生反應，而產生沉積(殘留)，相較之下現有的先進浸潤式微影卻受到浸潤液體沾黏，而殘留物體，造成污染。
本發明之又一目的在提供一種微影機台及其應用，其能大幅減少微影製程的步驟，進而降低製作成本，並且避免因製程步驟繁瑣所提高的製程異常與產品缺陷，進而提高生產成果。
為達上述之目的，本發明提供一種微影機台，其包含有一用以產生一電子束或離子束之電子束或離子束產生器；一用以承載一基材之基材承載台；以及一前驅氣體注入器，其係於基材上注入一前驅氣體，以與電子束或離子束反應沈積於基材上，形成一圖案層。
本發明尚提供一種利用上述之微影機台所製得之圖案層，其係位於一基材上，該圖案層係由一與電子束或離子束反應之前驅氣體沈積所形成。
本發明尚提供一種圖案層的製作方法，其步驟包含有先提供一基材；於基材上形成一前驅氣體；以及利用一電子束或離子束與前驅氣體進行反應，以在基材上沉積形成一圖案層。
本發明更提供另一種微影機台，其包含有：一用以產生一電子束或離子束之電子束或離子束產生器；以及一基材承載台，其係用以承載一表面具有一欲與電子束或離子束反應之前驅層之基材。
本發明提供一種利用上述之微影機台所製得之圖案層，其係位於一基材上，該圖案層係由一與電子束或離子束反應之前驅層經選擇性蝕刻後所形成。
本發明尚提供另一種圖案層的製作方法，其步驟包含有先提供一基材；於基材上形成一前驅層；利用一電子束或離子束與部分前驅層進行反應，以改變部分前驅層之特性；以及對前驅層進行選擇性蝕刻，以形成一圖案層。
底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。
本發明之精神所在係關於一種微影機台及其應用，其係利用電子束或離子束的高微影特性於基材上形成一圖案層，以作為硬質遮罩或其它應用。鑑此，只要用是利用本發明之精神，不管前驅物、圖案層材質上的選用或用途，或者製程參數上的變化，當無脫離本發明之精神範疇。
請參閱第2圖，其係本發明之微影機台的第一種架構示意圖。如圖所示，本發明之電子束或離子束微影機台20包含有一電子束或離子束產生器22；一位於電子束或離子束產生器22下方的基材承載台24；以及一前驅氣體注入器26，其係注入欲與電子束或離子束產生器22之電子束或離子束產生反應之氣體。
接續，請參閱第3(a)~3(b)圖，其係利用上述本發明之第一種微影機台架構製備出之一作為硬質遮罩層之圖案層的步驟結構示意圖。首先，如第3(a)圖所示，提供一承載於基材承載台24上之半導體基材28，例如矽基材、鍺基材、三五(III-V)族化合物或二六(II-VI)族化合物所組構成之基材，並利用前驅氣體注入器26於基材28上方形成一前驅氣體30，例如金屬前驅氣體或含介電層前驅氣體，隨後利用電子束或離子束產生器22產生一電子束或離子束32依預設的定義圖案選擇性的與前驅氣體30進行反應，以誘發前驅氣體30沉積於基材28上；最後，沈積形成如第3(b)圖所示，於基材28上形成一作為硬質遮罩層之圖案層34，達成僅需一步驟就可完成的圖形定義沉積。最後可再利用乾蝕刻技術將圖案層34之圖案轉移至基材28。
其中前驅氣體30形成沈積物與否，是取決於電子束或離子束32依照預設的定義圖案之區域掃瞄次數與定點停留時間所給予前驅氣體30反應能量大小。而圖案層34將取決於前驅氣體30之種類，而為含鉑、含鎢、含鈦(Ti)或含鉭(Ta)之金屬層，或者為二氧化矽、氮化矽或碳化矽之介電層。
此外電子束或離子束誘發前驅氣體沉積的同時能擁有電子束或離子束微影的解析能力與高精密圖形轉移，免去傳統上微影技術需光阻作為圖形轉移的媒介。此外，前驅氣體並不會與電子束或離子束未定義(也就是未照射)的區域產生反應，而產生沉積(殘留)，相較之下現有的先進浸潤式微影卻受到浸潤液體沾黏，而殘留物體，造成污染，因此在良率控制上，本發明的方法也具有先進的地方。更者本實施方式應用於製作硬質遮罩層時相較於習知的先進浸潤式微影可減少9道製程步驟。
請參閱第4圖，其係利用上述之第一種微影機台架構所製備出的電子束或離子束誘發沉積硬質遮罩層所形成的靜態隨機存取記憶體(SRAM)閘極層圖形之電子顯微鏡照相圖。在此實施例中基材係選用矽基材，前驅氣體係選用含鉑氣體，且利用導電銅膠帶將基材接地，而電子束或離子束的相關參數為加速電壓設定在5千伏特(kV)，電流為98～500帕(pA)，掃瞄次數(passes)為一次，定義區域之停留時間為1μs～100μs，使用的點陣圖形(bitmap)是24位元的格式圖檔。
請參閱第5圖，其係本發明之微影機台的第二種架構示意圖。如圖所示，本發明之電子束或離子束微影機台36包含有一電子束或離子束產生器38；以及一位於電子束或離子束產生器38下方的基材承載台40。
請再參閱第6(a)～6(c)圖，其係利用上述本發明之第二種微影機台架構於一基材上製備出一圖案層的步驟結構示意圖。首先，如第6(a)圖所示，於基材承載台40上承載一表面上形成有一前驅層42之半導體基材44，其係選自於矽基材、鍺基材，或是由三五族化合物或二六族化合物所組構成之基材，前驅層42是金屬材質或者介電材質；隨後如第6(b)圖所示，利用電子束或離子束產生器38所產生的電子束或離子束46依預設的定義圖案選擇性地與部分前驅層42a進行反應，以改變此部分前驅層42a之特性，例如相變化、鍵結等的改變；最後如第6(c)圖所示，利用選擇性蝕刻方式對呈現不同特性之前驅層進行蝕刻移除，以形成一圖案層48。其中前驅層42特性上的改變是取決於電子束或離子束依照預設之區域掃瞄次數與定點停留時間所給予前驅層反應能量大小。
若此圖案層是作為一硬質遮罩層時，係以供後續對基材34進行圖案化製程。
綜上所述本發明提出一種微影機台及其應用，其不需額外的阻劑成膜、顯影與硬質遮罩處理，即可於基材上形成高解析的圖形，在未來的微影技術上具有極高的發展潛力。
唯以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍。故即凡依本發明申請範圍所述之特徵及精神所為之均等變化或修飾，均應包括於本發明之申請專利範圍內。
10．．．蝕刻遮罩層
12．．．硬質遮罩
14．．．硬質遮罩
16．．．抗反射層
18．．．高分子塗層
19．．．基材
20．．．微影機台
22．．．電子束或離子束產生器
24．．．基材承載台
26．．．前驅氣體注入器
28．．．基材
30．．．前驅氣體
32．．．電子束或離子束
34．．．圖案層
36．．．微影機台
38．．．電子束或離子束產生器
40．．．基材承載台
42、42a．．．前驅層
44．．．基材
46．．．電子束或離子束
48．．．圖案層
第1圖係目前先進浸潤式微影製程之蝕刻遮罩層結構的示意圖。
第2圖其係本發明之微影機台的第一種架構示意圖。
第3(a)～3(b)圖係利用上述本發明之第一種微影機台架構製備出之一作為硬質遮罩層之圖案層的步驟結構示意圖。
第4圖係利用上述之第一種微影機台架構所製備出的電子束或離子束誘發沉積硬質遮罩層所形成的靜態隨機存取記憶體(SRAM)閘極層圖形之電子顯微鏡照相圖。
第5圖係本發明之微影機台的第二種架構示意圖。
第6(a)～6(c)圖係利用上述本發明之第二種微影機台架構於基材上製備出一圖案層的步驟結構示意圖。
20．．．微影機台
22．．．電子束或離子束產生器
24．．．基材承載台
26．．．前驅氣體注入器

Claims (6)

  1. 一種圖案層的製作方法，其包含有下列步驟：提供一半導體基材；於該半導體基材上形成一前驅氣體；以及利用一電子束或離子束與該前驅氣體進行反應，以在該基材上沉積形成作為硬質遮罩層之一圖案層。
  2. 如申請專利範圍第1項所述之圖案層的製作方法，其中該前驅氣體係選自於含金屬前驅氣體或介電層前驅氣體。
  3. 如申請專利範圍第1項所述之圖案層的製作方法，其中該基材係選自於矽基材或鍺基材或三五(III-V)族化合物或二六(II-VI)族化合物。
  4. 如申請專利範圍第1項所述之圖案層的製作方法，其中該硬質遮罩層為金屬材質或介電材質。
  5. 一種圖案層的製作方法，其包含有下列步驟：提供一半導體基材；於該半導體基材上形成為金屬材質之一前驅層；利用一電子束或離子束與部分該前驅層進行反應，以改變部分該前驅層之特性；以及對該前驅層進行選擇性蝕刻，以形成作為硬質遮罩層之一圖案層。
  6. 如申請專利範圍第4項所述之圖案層的製作方法，其中該基材之材質係選自於矽基材或鍺基材或三五(III-V)族化合物或二六(II-VI)族化合物。
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