TWI406341B - Decapsulation method of chip stacked package - Google Patents

Decapsulation method of chip stacked package Download PDF

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Publication number
TWI406341B
TWI406341B TW099134478A TW99134478A TWI406341B TW I406341 B TWI406341 B TW I406341B TW 099134478 A TW099134478 A TW 099134478A TW 99134478 A TW99134478 A TW 99134478A TW I406341 B TWI406341 B TW I406341B
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Taiwan
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acid
wafer
package structure
wafers
stack package
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TW099134478A
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Chinese (zh)
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TW201216380A (en
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Yen Chih Lai
Shun Chien Chang
Ming Chi Chen
Hsiu Chi Lin
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Powertech Technology Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/98Methods for disconnecting semiconductor or solid-state bodies

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  • Packaging Frangible Articles (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

Disclosed is a decapsulation method of chip stacked package. A chip stacked package is bound by an acid-proof tape and immersed in an acid solution. The molding compound and die-bonding layer are dissolved by acid-boiling until a plurality of chips are exposed and separated but still bound by the acid-proof tape. Accordingly, there can be stayed its original chip stacking sequence after taking out the chips to perform failure analysis.

Description

晶片堆疊封裝構造之開蓋方法Open method of wafer stack package structure

本發明係有關於適用於處理半導體裝置之方法,特別係有關於一種晶片堆疊封裝構造之開蓋方法。The present invention relates to a method for processing a semiconductor device, and more particularly to a method of opening a wafer stack package structure.

在現代的構裝技術(assembly technology)中,多晶片堆疊封裝構造已經廣泛地應用於各種不同的記憶體IC產品。因為多晶片堆疊封裝構造具有較高的密集度與較低的成本,使得幾種不同形式的多晶片堆疊封裝構造,如兩個晶片(2-die)、四個晶片(4-die)與八個晶片(8-die)的堆疊,皆作為記憶體產品的主要部分。伴隨而來的一大挑戰則是構裝製程之複雜性,故失效分析(failure analysis,FA)之重要性也更加提升,以偵測出在構裝製程中所產生之缺陷。然而,對於失效分析工程師(FA engineer)而言,為了要能夠在晶片堆疊封裝構造之多個晶片中精確地辨識出有缺陷的晶片,需要進行「開蓋」(或可稱為解封裝)(decapsulation)作業。如何能夠在晶片散離之後確認晶片的原始順序便成為在構裝製程中尋找可能問題之重要關鍵。In modern assembly technology, multi-wafer stacked package configurations have been widely used in a variety of different memory IC products. Because of the high density and low cost of multi-wafer stacked package construction, several different forms of multi-wafer stacked package configurations, such as two wafers (2-die), four wafers (4-die) and eight The stack of 8-die is used as the main part of the memory product. A major challenge is the complexity of the manufacturing process, so the importance of failure analysis (FA) is also enhanced to detect defects in the manufacturing process. However, for a FA engineer, in order to be able to accurately identify a defective wafer in a plurality of wafers of a wafer stack package structure, an "opening" (or may be referred to as decapsulation) is required ( Decapsulation) job. How to confirm the original order of the wafer after the wafer is scattered becomes an important key to finding possible problems in the fabrication process.

傳統的開蓋技術係採用酸沸法,先將封裝構造直接投入至酸性溶液中,並且浸泡煮沸一段時間,以溶解封裝構造之封膠體,使得原本密封於封裝構造內之晶片脫離。當晶片堆疊封裝構造之開蓋亦採用酸沸法時,因封膠體被溶解,失去了封膠體包覆的多個晶片隨意地流動於酸性溶液中,進而混淆了每一晶片的原始堆疊順序,加上每一晶片又具有相同的外觀,導致無法從散離的晶片中辨別出有缺陷之晶片,因而延誤了後續的失效分析。並且,晶片在酸性溶液之內任意流動,亦容易發生晶片相互碰撞而損壞晶片表面之情況。The conventional opening technique uses an acid boiling method in which the package structure is directly introduced into an acidic solution, and the immersion is boiled for a period of time to dissolve the encapsulant of the package structure, so that the wafer originally sealed in the package structure is detached. When the opening of the wafer stacking and packaging structure is also subjected to the acid boiling method, since the sealing body is dissolved, the plurality of wafers which have been lost by the sealing body flow freely in the acidic solution, thereby confusing the original stacking order of each wafer. In addition, each wafer has the same appearance, resulting in the inability to discern defective wafers from the dispersed wafers, thus delaying subsequent failure analysis. Moreover, the wafer arbitrarily flows within the acidic solution, and it is also prone to the case where the wafers collide with each other to damage the surface of the wafer.

此外,有人提出另一種晶片封裝構造之開蓋方法,如我國專利公告編號442933號「將半導體晶片從塑膠封裝中快速取出的方法」,亦是針對封裝單一晶片之封裝構造進行開蓋處理,企圖在毋須使用化學處理的情況下取出密封於塑膠封裝內之晶片。首先,對形成有塑膠封裝保護的晶片加熱,使得塑膠封裝因遇熱而開始產生脆化。接著,利用兩夾具夾住塑膠封裝的兩端,並同時於塑膠封裝之下方準備承載器以作為承載晶片之用。之後,將兩夾具以相對相反的方向扭轉,使經過加熱之塑膠封裝受到轉矩而破裂,進而使晶片自然掉落至位於下方之承載器中。然而,由於是直接施加外力將塑膠封裝破壞,以取出位於其內部之晶片,除了在扭轉塑膠封裝時容易直接損害到晶片外,在晶片自然掉落至承載器之後亦可能受到碰撞而受損。倘若,將上述開蓋方法應用於晶片堆疊封裝構造時,呈堆疊型態之晶片更容易受到外來的轉矩作用而直接損毀,並且在晶片掉落散離至承載器之後亦無法辨別出何者為有缺陷之晶片。In addition, another method for opening the chip package structure has been proposed, such as the method of quickly taking out a semiconductor wafer from a plastic package, as disclosed in Patent Publication No. 442933, and also for opening a package structure for packaging a single wafer. The wafer sealed in the plastic package is removed without the use of a chemical treatment. First, the wafer formed with the plastic package protection is heated, so that the plastic package begins to embrittle due to heat. Next, the two ends of the plastic package are clamped by the two clamps, and at the same time, a carrier is prepared under the plastic package for carrying the wafer. Thereafter, the two clamps are twisted in opposite directions, causing the heated plastic package to be broken by torque, thereby causing the wafer to naturally fall into the carrier located below. However, since the plastic package is directly damaged by external application of force, the wafer located inside thereof is taken out, and it is easy to directly damage the wafer except when twisted plastic package, and may be damaged by collision after the wafer is naturally dropped to the carrier. If the above-described uncovering method is applied to the wafer stacking and packaging structure, the wafer in the stacked type is more susceptible to external torque and directly damaged, and it is impossible to discern which is after the wafer is dropped and scattered to the carrier. Defective wafer.

有鑒於此本發明之主要目的係在於提供一種晶片堆疊封裝構造之開蓋方法,可保持晶片原本的堆疊順序,以利於失效分析之進行。In view of the above, the main object of the present invention is to provide a method for opening a wafer stack package structure, which can maintain the original stacking order of the wafer to facilitate the failure analysis.

本發明之次一目的係在於提供一種晶片堆疊封裝構造之開蓋方法,能防止晶片在酸性溶液中激烈移動而受損,以保持晶片表面完整無缺。A second object of the present invention is to provide a method for opening a wafer stack package structure which can prevent the wafer from being strongly moved and damaged in an acidic solution to keep the surface of the wafer intact.

本發明的目的及解決其技術問題是採用以下技術方案來實現的。本發明揭示一種晶片堆疊封裝構造之開蓋方法,主要包含:提供一晶片堆疊封裝構造,其係包含有一封膠體、複數個密封於該封膠體內之晶片與至少一黏著該些晶片之黏晶層,其中該些晶片係呈相互堆疊型態。以一耐酸綑帶捆綁該晶片堆疊封裝構造。之後,浸泡該晶片堆疊封裝構造與該耐酸綑帶至一酸性溶液中。以酸沸方式使該晶片堆疊封裝構造之該封膠體及該黏晶層溶解於該酸性溶液內,直到該些晶片為顯露、散離且仍被該耐酸綑帶所捆綁,以保持該些晶片的堆疊順序不變。最後,取出被該耐酸綑帶所捆綁之該些晶片。The object of the present invention and solving the technical problems thereof are achieved by the following technical solutions. The invention discloses a method for opening a wafer stack package structure, which mainly comprises: providing a wafer stack package structure comprising a gel body, a plurality of wafers sealed in the sealant body and at least one die bonder bonding the wafers a layer, wherein the plurality of wafers are stacked on each other. The wafer stack package structure is bundled with an acid resistant strap. Thereafter, the wafer stack package structure is immersed in the acid-resistant ribbon to an acidic solution. The encapsulant and the adhesive layer of the wafer stack package structure are dissolved in the acidic solution by acid boiling until the wafers are exposed, scattered and still bound by the acid-resistant strap to hold the wafers. The stacking order is unchanged. Finally, the wafers bound by the acid resistant strap are removed.

本發明的目的及解決其技術問題還可採用以下技術措施進一步實現。The object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.

在前述之晶片堆疊封裝構造之開蓋方法中,該耐酸綑帶之材質係可選用鐵氟龍(Teflon)。In the opening method of the wafer stack package structure described above, the material of the acid-resistant strap is Teflon.

在前述之晶片堆疊封裝構造之開蓋方法中,該耐酸綑帶係可呈十字捆綁並具有一位於該封膠體頂面之繫結點。In the opening method of the wafer stack package structure described above, the acid-resistant strap may be bundled in a cross and have a tie point on the top surface of the sealant.

在前述之晶片堆疊封裝構造之開蓋方法中,在上述取出步驟中係可利用該繫結點取出該些晶片。In the opening method of the wafer stack package structure described above, the wafers can be taken out by the splicing point in the above-mentioned taking-out step.

在前述之晶片堆疊封裝構造之開蓋方法中,該繫結點係可為蝴蝶結。In the opening method of the wafer stack package structure described above, the tie point may be a bow tie.

在前述之晶片堆疊封裝構造之開蓋方法中,該耐酸綑帶係可具有伸縮彈性。In the aforementioned opening method of the wafer stack package structure, the acid-resistant strap system may have stretch elasticity.

由以上技術方案可以看出,本發明之晶片堆疊封裝構造之開蓋方法,具有以下優點與功效:It can be seen from the above technical solutions that the method for opening the wafer stack package structure of the present invention has the following advantages and effects:

一、可藉由以耐酸綑帶捆綁晶片堆疊封裝構造與浸泡至酸性溶液中作為其中之一技術手段,在酸沸方式溶解晶片堆疊封裝構造之封膠體與黏晶層之過程中,能夠限制晶片的移動而不會散離。因此,在取出晶片之後,可保持晶片原本的堆疊順序,以利於失效分析之進行。1. The wafer stacking package structure and the immersion in an acidic solution can be used as a technical means for dissolving the wafer in the acid-boiling manner in the process of dissolving the sealant and the die layer of the wafer stack package structure. The movement does not leave. Therefore, after the wafer is taken out, the original stacking order of the wafer can be maintained to facilitate the failure analysis.

二、可藉由以耐酸綑帶捆綁晶片堆疊封裝構造作為其中之一技術手段,當封膠體被溶解於酸性溶液內,能防止晶片在酸性溶液中激烈碰撞而受損,以保持晶片表面完整無缺。Second, the chip stacking package structure can be bundled with an acid-resistant strap as one of the technical means. When the sealant is dissolved in the acidic solution, the wafer can be prevented from colliding and being damaged in an acidic solution, so as to keep the surface of the wafer intact. .

以下將配合所附圖示詳細說明本發明之實施例,然應注意的是,該些圖示均為簡化之示意圖,僅以示意方法來說明本發明之基本架構或實施方法,故僅顯示與本案有關之元件與組合關係,圖中所顯示之元件並非以實際實施之數目、形狀、尺寸做等比例繪製,某些尺寸比例與其他相關尺寸比例或已誇張或是簡化處理,以提供更清楚的描述。實際實施之數目、形狀及尺寸比例為一種選置性之設計,詳細之元件佈局可能更為複雜。The embodiments of the present invention will be described in detail below with reference to the accompanying drawings in which FIG. The components and combinations related to this case, the components shown in the figure are not drawn in proportion to the actual number, shape and size of the actual implementation. Some size ratios are proportional to other related sizes or have been exaggerated or simplified to provide clearer description of. The actual number, shape and size ratio of the implementation is an optional design, and the detailed component layout may be more complicated.

依據本發明之第一具體實施例,一種晶片堆疊封裝構造之開蓋方法舉例說明於第1圖之流程方塊圖、第2A至2F圖在開蓋過程中之元件截面示意圖以及第3圖其由酸性溶液中取出被耐酸綑帶所捆綁之晶片後之立體示意圖。根據第1圖,該晶片堆疊封裝構造之開蓋方法主要包含以下步驟:「提供一晶片堆疊封裝構造」之步驟1、「以耐酸綑帶捆綁晶片堆疊封裝構造」之步驟2、「浸泡晶片堆疊封裝構造與耐酸綑帶至酸性溶液中」之步驟3、「以酸沸方式溶解封膠體與黏晶層」之步驟4以及「取出被耐酸綑帶所捆綁之晶片」之步驟5,詳細步驟請參閱第2A至2F圖,說明如下。According to a first embodiment of the present invention, a method for opening a wafer stack package structure is illustrated in the block diagram of FIG. 1 , a cross-sectional view of the components in the opening process of FIGS. 2A to 2F, and a third diagram. A schematic view of the acid solution taken out of the wafer bundled with the acid-resistant strap. According to FIG. 1 , the method for opening the wafer stack package structure mainly comprises the following steps: “Providing a wafer stack package structure”, “Step 2 of “binding the wafer stack package structure with an acid-resistant strap”, “Immersion wafer stacking” Step 4 of "Packaging Structure and Acid-Resistant Binding to Acidic Solution", Step 4 of "Dissolving Sealant and Mold Layer by Acid Boiling" and Step 5 of "Removing Wafer Bundled by Acid-Resistant Bundle", detailed steps Referring to Figures 2A through 2F, the description is as follows.

請參閱第2A圖所示,步驟1中提供一晶片堆疊封裝構造10,其係包含有一封膠體11、複數個密封於該封膠體11內之晶片12與至少一黏著該些晶片12之黏晶層13,其中該些晶片12係呈相互堆疊型態,利用該黏晶層13黏著該些晶片12,該黏晶層13可為晶粒貼附材料(Die Attach Material,DAM),可在晶圓階段預先形成在晶片之背面。詳細而言,該晶片堆疊封裝構造10係可另包含一基板14,用以承載該些晶片12,並且位於最下方之晶片12係藉由一黏著材料15結合至該基板14,以完成在該基板14上之晶片堆疊。在一較佳型態中,該封膠體11係形成於該基板14上,並完全包覆該些晶片12、該些黏晶層13與該黏著材料15。在本實施例中,該晶片堆疊封裝構造10係已進行電性失效分析(electric failure analysis,EFA)量測,並測得該些晶片12其中之一為一有缺陷的晶片12A,並確定該有缺陷的晶片12A之位置。例如,該些晶片12中堆疊於第二層之晶片(以由下而上方式的堆疊方向)。其中,所稱之「電性失效分析」係指利用電性方式進行失效分析者,例如:量測電流、EMMI、wafer map判定等。如以習知的酸沸法,多個晶片會散離而無法直接取出正確的缺陷晶片進行分析檢查。Referring to FIG. 2A, a wafer stack package structure 10 is provided in the first step, which comprises a glue body 11, a plurality of wafers 12 sealed in the sealant 11 and at least one die bond adhered to the wafers 12. The layer 13 is in a stacked state, and the wafer 12 is adhered by the die layer 13. The die layer 13 can be a die attach material (DAM). The round stage is preformed on the back side of the wafer. In detail, the wafer stack package structure 10 can further include a substrate 14 for carrying the wafers 12, and the bottommost wafer 12 is bonded to the substrate 14 by an adhesive material 15 to complete The wafer stack on the substrate 14. In a preferred embodiment, the encapsulant 11 is formed on the substrate 14 and completely covers the wafer 12, the adhesive layer 13 and the adhesive material 15. In this embodiment, the wafer stack package structure 10 has been subjected to electrical failure analysis (EFA) measurement, and one of the wafers 12 is measured as a defective wafer 12A, and the The location of the defective wafer 12A. For example, the wafers of the wafers 12 stacked in the second layer (in a stacking direction from the bottom up). The term "electrical failure analysis" refers to the use of electrical methods for failure analysis, such as measuring current, EMMI, and wafer map determination. As in the conventional acid boiling method, a plurality of wafers are scattered and the correct defective wafer cannot be directly taken out for analysis and inspection.

步驟2請參閱第2B圖所示,以一耐酸綑帶20捆綁該晶片堆疊封裝構造10。更具體而言,該耐酸綑帶20係被貼附固定於該晶片堆疊封裝構造10之該封膠體11之表面,所稱之「貼附固定」係指捆綁方式須使該耐酸綑帶20緊密地平貼於該該封膠體11之表面而不可滑動或鬆脫,不需要直接黏著於該封膠體11之表面。在一較佳型態中,該耐酸綑帶20係可呈十字捆綁並具有一位於該封膠體11頂面之繫結點21。具體而言,所稱之「十字捆綁」係指在該晶片堆疊封裝構造10之底面對該耐酸綑帶20做第一次十字交叉,再由該晶片堆疊封裝構造10之底面沿著該晶片堆疊封裝構造10四周向上包綑,並於該封膠體11之頂面將該耐酸綑帶20做第二次十字交叉且以打結方式形成該繫結點21。因此,能夠穩固地捆綁該晶片堆疊封裝構造10的四側邊,以防止在後續步驟中發生脫離或傾斜之情況,並且不影響在後續步驟中酸性溶液對該封膠體11溶解。此外,該繫結點21係可為蝴蝶結,以便於在去除封膠體之後拆除該耐酸綑帶20。或者,該繫結點21亦可選用其它形式的活結,例如:平結、接繩結、雙半結等,以提供易於解開之功效,且不影響該繫結點21本身之牢固性。在一較佳實施例中,該耐酸綑帶20之材質係可選用鐵氟龍(Teflon),藉由鐵氟龍本身的化學與物理特性,以抵抗高溫與強酸強鹼,並且質地柔軟而光滑。在一變化例中,該耐酸綑帶20之材質亦可選自於聚對苯二甲酸乙二醇(PET)與聚氯乙烯(PVC)之其中之一,或者是其它同樣具有耐高/低溫性與抗腐蝕性之材質。Step 2 Referring to Figure 2B, the wafer stack package structure 10 is bundled with an acid resistant strap 20. More specifically, the acid-resistant strap 20 is attached to the surface of the sealant 11 of the wafer stack package structure 10, and the term "attach-fixed" means that the acid-resistant strap 20 is tightly bound. The ground surface is attached to the surface of the sealant 11 and is not slidable or loose, and does not need to be directly adhered to the surface of the sealant 11. In a preferred form, the acid resistant strap 20 can be bundled in a cross and has a tie point 21 on the top surface of the sealant 11. Specifically, the term "cross-bundling" means that the acid-resistant strap 20 is first crossed on the bottom surface of the wafer-stacked package structure 10, and the bottom surface of the wafer-stacked package structure 10 is along the wafer. The stacked package structure 10 is bundled upwards, and the acid-resistant strap 20 is cross-shaped on the top surface of the sealant 11 to form the tie point 21 in a knotted manner. Therefore, the four sides of the wafer stack package structure 10 can be firmly bundled to prevent the occurrence of detachment or tilt in the subsequent step, and does not affect the dissolution of the sealant 11 by the acidic solution in the subsequent step. Additionally, the tie point 21 can be a bow tie to facilitate removal of the acid resistant strap 20 after removal of the sealant. Alternatively, the knot 21 may be selected from other forms of slip knots, such as flat knots, tie knots, double half knots, etc., to provide an easy release effect without affecting the firmness of the tie point 21 itself. In a preferred embodiment, the acid-resistant strap 20 is made of Teflon. The chemical and physical properties of the Teflon itself resist high temperature and strong acid and alkali, and the texture is soft and smooth. . In a variant, the material of the acid-resistant strap 20 may also be selected from one of polyethylene terephthalate (PET) and polyvinyl chloride (PVC), or other materials having high/low temperature resistance. Material for corrosion and corrosion resistance.

步驟3請參閱第2C圖所示,將已被該耐酸綑帶20所捆綁之該晶片堆疊封裝構造10放入至一酸性溶液30,使該晶片堆疊封裝構造10與該耐酸綑帶20浸泡於該酸性溶液30中。該酸性溶液30係可包含發煙硝酸,用以溶解封膠體但保留半導體晶片的完整。在本實施例中,該酸性溶液30係可儲放於一耐酸容器40之內,該耐酸容器40之材質係可選用玻璃或是其它耐高/低溫與耐酸鹼之材質,通常該耐酸容器40係選用玻璃器皿為佳。此外,該酸性溶液30係可預先加熱至一定溫度,例如攝氏70-90度,以縮短整體的製程時間。Step 3 Referring to FIG. 2C, the wafer stack package structure 10 that has been bundled by the acid-resistant strap 20 is placed in an acidic solution 30, so that the wafer stack package structure 10 and the acid-resistant strap 20 are immersed in The acidic solution 30 is in the solution. The acidic solution 30 can comprise fuming nitric acid to dissolve the encapsulant but retain the integrity of the semiconductor wafer. In the present embodiment, the acidic solution 30 can be stored in an acid-resistant container 40. The material of the acid-resistant container 40 can be selected from glass or other materials resistant to high/low temperature and acid and alkali, usually the acid-resistant container. The 40 series is preferably made of glassware. In addition, the acidic solution 30 can be preheated to a certain temperature, for example, 70-90 degrees Celsius, to shorten the overall process time.

步驟4請參閱第2D與2E圖所示,在該耐酸容器40內以酸沸(acid-boiling)方式使該晶片堆疊封裝構造10之該封膠體11及該黏晶層13溶解於該酸性溶液30內。在一較佳實施例中,在該晶片堆疊封裝構造10放入該酸性溶液30之後,亦可持續對該酸性溶液30進行加熱,以使該酸性溶液30具有溶解封膠體之較佳活性。此外,由於該封膠體11、該黏晶層13與該黏著材料15均具有可溶解於該酸性溶液30之樹脂材質,所以在本步驟中該封膠體11、該黏晶層13與該黏著材料15皆會漸漸地溶解於該酸性溶液30內,但不會腐蝕破壞到該些晶片12與該基板14。特別是,如第2E圖所示,該晶片堆疊封裝構造10之酸沸時間應到達該些晶片12為顯露、散離且仍被該耐酸綑帶20所捆綁,以保持該些晶片12的堆疊順序不變,故在本實施例中,該有缺陷的晶片12A仍是該些晶片12中堆疊於第二層之晶片。具體而言,在該封膠體11被溶解之後,使得整體體積縮小,但該耐酸綑帶20仍可束縛該些晶片12與該基板14,該些晶片12並不會因失去了該封膠體11之包覆而隨意地飄浮流動於該酸性溶液30中。在一較佳型態中,該耐酸綑帶20係可具有伸縮彈性,所以在該封膠體11、該黏晶層13與該黏著材料15被溶解後,該耐酸綑帶20能適當地縮小捆綁空間,依然能緊密且穩固地捆綁住該些晶片12與該基板14。Step 4, as shown in FIGS. 2D and 2E, the sealant 11 and the die layer 13 of the wafer stack package structure 10 are dissolved in the acid solution in an acid-boiling manner in the acid-resistant container 40. 30 inside. In a preferred embodiment, after the acid stack solution 30 is placed in the wafer stack package structure 10, the acidic solution 30 can be continuously heated to provide the acidic solution 30 with a preferred activity for dissolving the sealant. In addition, since the sealant 11, the adhesive layer 13 and the adhesive material 15 both have a resin material soluble in the acidic solution 30, the sealant 11, the adhesive layer 13 and the adhesive material are in this step. 15 will gradually dissolve in the acidic solution 30, but will not corrode the wafer 12 and the substrate 14. In particular, as shown in FIG. 2E, the acid boiling time of the wafer stack package structure 10 should be such that the wafers 12 are exposed, scattered, and still bound by the acid resistant strap 20 to maintain the stack of wafers 12. The order is unchanged, so in the present embodiment, the defective wafer 12A is still the wafer stacked on the second layer of the wafers 12. Specifically, after the encapsulant 11 is dissolved, the overall volume is reduced, but the acid-resistant strap 20 can still bind the wafer 12 and the substrate 14, and the wafers 12 are not lost due to the encapsulant 11 The coating is randomly floated and flows into the acidic solution 30. In a preferred embodiment, the acid-resistant strap 20 can have elastic elasticity, so that after the sealant 11, the adhesive layer 13 and the adhesive material 15 are dissolved, the acid-resistant strap 20 can be appropriately narrowed and bundled. Space, the wafer 12 and the substrate 14 can still be tightly and firmly tied.

步驟5請參閱第2F與3圖所示,待確定該封膠體11已溶解且該些晶片12呈現層層散離狀態之後,取出被該耐酸綑帶20所捆綁之該些晶片12。並且,由於該基板14係未溶解於該酸性溶液30之內(如第2E圖所示),所以當在取出該些晶片12時,該基板14仍可用以承載已散離之該些晶片12(包含該有缺陷的晶片12A),晶片堆疊之排列順序仍不會改變或混亂。較佳地,在上述取出該些晶片12之步驟中係可利用該繫結點21取出該些晶片12。由於該耐酸綑帶20所形成之該繫結點21係位於該封膠體11之頂面,有助於操作人員在取出該些晶片12之後進行初步辨識該些晶片12之堆疊順序。此外,操作人員亦可於該些晶片12之上方解開該繫結點21,即能輕易地拆除該耐酸綑帶20而毋須執行額外的翻轉動作,故該些晶片12無論是在浸泡前與取出後皆能夠維持其原來的堆疊順序。Step 5 Referring to FIGS. 2F and 3, after the sealant 11 has been dissolved and the wafers 12 are in a layered state, the wafers 12 bundled by the acid-resistant straps 20 are taken out. Moreover, since the substrate 14 is not dissolved in the acidic solution 30 (as shown in FIG. 2E), when the wafers 12 are removed, the substrate 14 can still be used to carry the wafers 12 that have been dispersed. (Including the defective wafer 12A), the order of arrangement of the wafer stacks remains unchanged or confusing. Preferably, in the step of taking out the wafers 12, the wafers 12 can be taken out by the node points 21. Since the tie point 21 formed by the acid-resistant strap 20 is located on the top surface of the sealant 11, it helps the operator to initially identify the stacking sequence of the wafers 12 after taking out the wafers 12. In addition, the operator can also untie the tie point 21 above the wafers 12, that is, the acid-resistant strap 20 can be easily removed without performing an additional flipping action, so the wafers 12 are before being soaked. After being taken out, it can maintain its original stacking order.

綜上所述,在本發明中可藉由以該耐酸綑帶20捆綁該晶片堆疊封裝構造10與浸泡至該酸性溶液30中作為其中之一技術手段,在酸沸過程中該晶片堆疊封裝構造10之該封膠體11與該黏晶層13之溶解不會造成該些晶片12之散離。因此,由該酸性溶液30中取出該些晶片12之後,仍可保持該些晶片12原本的堆疊順序,所以有助於操作人員進行後續的失效分析(failure analysis,FA),除了使得操作人員易於辨識之外,亦可縮短整體檢測時間。此外,由於該封膠體11被溶解之後,該耐酸綑帶20依然有效地捆綁住該些晶片12不致散離,故能防止該些晶片12在該酸性溶液30中激烈碰撞而受損,以保持該些晶片12表面完整無缺。In summary, in the present invention, the wafer stack package structure 10 can be bundled with the acid-resistant strap 20 and immersed in the acidic solution 30 as one of the technical means, the wafer stack package structure in the acid boiling process. The dissolution of the sealant 11 and the die layer 13 does not cause the wafers 12 to be separated. Therefore, after the wafers 12 are taken out of the acidic solution 30, the original stacking order of the wafers 12 can be maintained, thereby facilitating the operator to perform subsequent failure analysis (FA), in addition to making the operator easy. In addition to identification, the overall inspection time can also be shortened. In addition, after the encapsulant 11 is dissolved, the acid-resistant strap 20 is still effectively bound to the wafers 12 so as not to be scattered, so that the wafers 12 can be prevented from being strongly collided and damaged in the acidic solution 30 to maintain The wafers 12 have a complete surface.

以上所述,僅是本發明的較佳實施例而已,並非對本發明作任何形式上的限制,雖然本發明已以較佳實施例揭露如上,然而並非用以限定本發明,任何熟悉本項技術者,在不脫離本發明之技術範圍內,所作的任何簡單修改、等效性變化與修飾,均仍屬於本發明的技術範圍內。The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention. Any simple modifications, equivalent changes and modifications made without departing from the technical scope of the present invention are still within the technical scope of the present invention.

步驟1 提供一晶片堆疊封裝構造Step 1 provides a wafer stack package structure

步驟2 以耐酸綑帶捆綁晶片堆疊封裝構造Step 2 Bundle wafer package structure with acid-resistant strap

步驟3 浸泡晶片堆疊封裝構造與耐酸綑帶至酸性溶液中Step 3 Soak the wafer stack package structure and acid-resistant strap to the acidic solution

步驟4 以酸沸方式溶解封膠體與黏晶層Step 4 Dissolve the sealant and the adhesive layer by acid boiling

步驟5 取出被耐酸綑帶所捆綁之晶片Step 5 Remove the wafer bundled with the acid-resistant strap

10...晶片堆疊封裝構造10. . . Wafer stack package construction

11...封膠體11. . . Sealant

12...晶片12. . . Wafer

12A...有缺陷的晶片12A. . . Defective wafer

13...黏晶層13. . . Binder layer

14...基板14. . . Substrate

15...黏著材料15. . . Adhesive material

20...耐酸綑帶20. . . Acid resistant strap

21...繫結點twenty one. . . Tie point

30...酸性溶液30. . . Acid solution

40...耐酸容器40. . . Acid resistant container

第1圖:依據本發明之一具體實施例的一種晶片堆疊封裝構造之開蓋方法之流程方塊圖。1 is a flow block diagram of a method of opening a wafer stack package structure in accordance with an embodiment of the present invention.

第2A至2F圖:依據本發明之一具體實施例的晶片堆疊封裝構造之開蓋方法在開蓋過程中之元件截面示意圖。2A to 2F are views showing a cross-sectional view of an element in a process of opening a lid according to a method of opening a wafer package package according to an embodiment of the present invention.

第3圖:依據本發明之一具體實施例的晶片堆疊封裝構造之開蓋方法繪示其由酸性溶液中取出被耐酸綑帶所捆綁之晶片後之立體示意圖。Fig. 3 is a perspective view showing the method of opening a wafer stack package according to an embodiment of the present invention, after the wafer is bound by an acid-resistant strap.

12...晶片12. . . Wafer

12A...有缺陷的晶片12A. . . Defective wafer

14...基板14. . . Substrate

20...耐酸綑帶20. . . Acid resistant strap

30...酸性溶液30. . . Acid solution

40...耐酸容器40. . . Acid resistant container

Claims (6)

一種晶片堆疊封裝構造之開蓋方法,包含:提供一晶片堆疊封裝構造,其係包含有一封膠體、複數個密封於該封膠體內之晶片與至少一黏著該些晶片之黏晶層,其中該些晶片係呈相互堆疊型態;以一耐酸綑帶捆綁該晶片堆疊封裝構造;浸泡該晶片堆疊封裝構造與該耐酸綑帶至一酸性溶液中;以酸沸方式使該晶片堆疊封裝構造之該封膠體及該黏晶層溶解於該酸性溶液內,直到該些晶片為顯露、散離且仍被該耐酸綑帶所捆綁,以保持該些晶片的堆疊順序不變;以及取出被該耐酸綑帶所捆綁之該些晶片。A method for opening a wafer stack package structure, comprising: providing a wafer stack package structure comprising a gel, a plurality of wafers sealed in the sealant body and at least one adhesive layer adhered to the wafers, wherein The wafers are stacked on each other; the wafer stack package structure is bundled with an acid-resistant strap; the wafer stack package structure and the acid-resistant strap are immersed in an acidic solution; and the wafer stack package structure is acid-boiling The sealant and the adhesive layer are dissolved in the acidic solution until the wafers are exposed, scattered and still bound by the acid-resistant strap to keep the stacking order of the wafers unchanged; and the acid-resistant bundle is taken out The bundles are bundled with the wafers. 根據申請專利範圍第1項之晶片堆疊封裝構造之開蓋方法,其中該耐酸綑帶之材質係選用鐵氟龍(Teflon)。The method for opening a wafer stack package structure according to claim 1, wherein the material of the acid-resistant strap is Teflon. 根據申請專利範圍第1或2項之晶片堆疊封裝構造之開蓋方法,其中該耐酸綑帶係呈十字捆綁並具有一位於該封膠體頂面之繫結點。The method of opening a wafer stack package according to claim 1 or 2, wherein the acid-resistant strap is bundled with a cross and has a tie point on a top surface of the sealant. 根據申請專利範圍第3項之晶片堆疊封裝構造之開蓋方法,其中在上述取出步驟中係利用該繫結點取出該些晶片。The method of opening a wafer stack package structure according to claim 3, wherein the wafer is taken out by the splicing point in the removing step. 根據申請專利範圍第3項之晶片堆疊封裝構造之開蓋方法,其中該繫結點係為蝴蝶結。A method of opening a wafer stack package structure according to claim 3, wherein the tie point is a bow. 根據申請專利範圍第1或2項之晶片堆疊封裝構造之開蓋方法,其中該耐酸綑帶係具有伸縮彈性。A method of opening a wafer stack package structure according to claim 1 or 2, wherein the acid-resistant strap has elasticity.
TW099134478A 2010-10-08 2010-10-08 Decapsulation method of chip stacked package TWI406341B (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW442933B (en) * 2000-02-24 2001-06-23 Taiwan Semiconductor Mfg Method for fast fetching the semiconductor chip from a plastic package
TW200822338A (en) * 2006-11-03 2008-05-16 Samsung Electronics Co Ltd Semiconductor chip stack package with reinforcing member connected to substrate for preventing package warpage
TW200845357A (en) * 2007-05-11 2008-11-16 Chipmos Technologies Inc Chip-stacked package structure
TW200919670A (en) * 2007-10-30 2009-05-01 Samsung Electronics Co Ltd Chip stack package
TW200929493A (en) * 2007-12-26 2009-07-01 Powertech Technology Inc Multi-chip stacked package
TW200937609A (en) * 2008-02-26 2009-09-01 Powertech Technology Inc Chips-between-substrates semiconductor package and method for manufacturing the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW442933B (en) * 2000-02-24 2001-06-23 Taiwan Semiconductor Mfg Method for fast fetching the semiconductor chip from a plastic package
TW200822338A (en) * 2006-11-03 2008-05-16 Samsung Electronics Co Ltd Semiconductor chip stack package with reinforcing member connected to substrate for preventing package warpage
TW200845357A (en) * 2007-05-11 2008-11-16 Chipmos Technologies Inc Chip-stacked package structure
TW200919670A (en) * 2007-10-30 2009-05-01 Samsung Electronics Co Ltd Chip stack package
TW200929493A (en) * 2007-12-26 2009-07-01 Powertech Technology Inc Multi-chip stacked package
TW200937609A (en) * 2008-02-26 2009-09-01 Powertech Technology Inc Chips-between-substrates semiconductor package and method for manufacturing the same

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