TWI404167B - Substrate holding apparatus and the method thereof - Google Patents

Substrate holding apparatus and the method thereof Download PDF

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Publication number
TWI404167B
TWI404167B TW99141202A TW99141202A TWI404167B TW I404167 B TWI404167 B TW I404167B TW 99141202 A TW99141202 A TW 99141202A TW 99141202 A TW99141202 A TW 99141202A TW I404167 B TWI404167 B TW I404167B
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substrate
platform
adsorbing
adsorption device
conditioning unit
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TW99141202A
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Chinese (zh)
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TW201222710A (en
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Mao Chi Lin
Min Kei Lee
Sung Ho Liu
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Ind Tech Res Inst
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Abstract

The invention discloses a substrate holding apparatus and the fabrication method thereof, the holding apparatus including: a base; a platform board to load the substrate; a heat exchanger configured on the base to cool or heat the platform board to form a liquid-drop distribution or to remove it on/from the surface of the platform board, respectively, wherein the liquid-drop distribution is used to attach the substrate on the platform board; a moving unit connected to the platform board and configured to let the platform board approach or leave the heat exchanger; and a controller electrically connected to the heat exchanger and the moving unit to control cooling or heating of the heat exchanger and move of the moving unit.

Description

吸附基板的裝置及其方法Device for adsorbing substrate and method thereof

本發明係關於一種基板吸附技術,特別是關於一種使用凝結液滴的表面張力作用的基板吸附裝置及方法。The present invention relates to a substrate adsorption technique, and more particularly to a substrate adsorption apparatus and method using surface tension of condensed droplets.

基板吸附技術在半導體製程或精密加工領域佔有重要的地位,目前所使用的吸附平台大多是由表面具有吸附結構(如微孔、溝槽等)的加工金屬板或非金屬板,組裝至一真空腔室並且連接至一真空幫浦的平台或直接由多孔性材料製作的平台(如氧化鋁陶瓷平台或多孔性鋁粉燒結平台)與真空幫浦的組合。然而對於軟性基板而言,此類吸附裝置因為平台表面吸附結構或多孔性材料燒結製作的均勻度與真空幫浦吸附壓力的不均勻,而導致應用於軟性基板的吸附時易發生微氣泡或凹陷的情況,造成製程良率降低的問題。例如,在軟性基板的雷射加工製程中,微粒或微氣泡現象會造成軟性基板表面的平坦度變差,而影響雷射加工的操作距離、加工線寬或加工能量。因此,有必要發展新的基板吸附技術,以適用於軟性基板的應用領域。Substrate adsorption technology plays an important role in the field of semiconductor manufacturing or precision processing. Most of the adsorption platforms currently used are fabricated metal plates or non-metal plates with adsorption structures (such as micropores, grooves, etc.) on the surface, assembled to a vacuum. The chamber is connected to a platform of a vacuum pump or a platform made directly of a porous material (such as an alumina ceramic platform or a porous aluminum powder sintering platform) in combination with a vacuum pump. However, for a flexible substrate, such an adsorption device is susceptible to microbubbles or depressions when applied to a soft substrate due to the uniformity of the adsorption structure of the platform surface or the uniformity of the porous material and the adsorption pressure of the vacuum pump. The situation, the problem of reduced process yield. For example, in a laser processing process of a soft substrate, the phenomenon of particles or microbubbles may cause the flatness of the surface of the flexible substrate to be deteriorated, thereby affecting the operating distance, processing line width, or processing energy of the laser processing. Therefore, it is necessary to develop new substrate adsorption technology to be applied to the application field of flexible substrates.

有鑑於此,在本發明的一方面,一實施例提供一種吸附基板的裝置,其包含:一基座;一平台,用以承載一基板;一熱調節單元,其係設置於該基座上,用以致冷以形成一液滴分佈於該平台的表面及加熱以去除該平台的表面的該液滴分佈,其中該液滴分佈用以吸附該基板於該平台上;一升降單元,其係連結至該平台,用以使該平台升降而接近或遠離該熱調節單元;及一控制單元,連結至該熱調節單元及該升降單元,用以控制該熱調節單元的致冷或加熱及該平台的升降移動。In view of this, in an aspect of the invention, an embodiment provides an apparatus for adsorbing a substrate, comprising: a base; a platform for carrying a substrate; and a thermal adjustment unit disposed on the base Cooling to form a droplet distribution on the surface of the platform and heating to remove the droplet distribution of the surface of the platform, wherein the droplet distribution is used to adsorb the substrate on the platform; a lifting unit, the system Linking to the platform for lifting the platform to approach or away from the thermal conditioning unit; and a control unit coupled to the thermal conditioning unit and the lifting unit for controlling refrigeration or heating of the thermal conditioning unit and The lifting movement of the platform.

在本發明的另一方面,另一實施例提供一種吸附基板的方法,其包含下列步驟:提供一基板吸附裝置,其包括:一平台及一熱調節單元;移動該平台直到接觸到該熱調節單元;藉由控制該熱調節單元,致冷該平台以形成一液滴分佈於該平台上;置放一基板於該平台上,藉由該液滴分佈的表面張力作用,吸附該基板於該平台上;及該液滴分佈形成一液態膜於該基板及該平台之間。In another aspect of the present invention, another embodiment provides a method of adsorbing a substrate, comprising the steps of: providing a substrate adsorption device comprising: a platform and a thermal adjustment unit; moving the platform until the thermal adjustment is contacted a unit; by controlling the thermal conditioning unit, cooling the platform to form a droplet distributed on the platform; placing a substrate on the platform, adsorbing the substrate by the surface tension of the droplet distribution And the droplet distribution forms a liquid film between the substrate and the platform.

以下將參照隨附之圖式詳細描述及說明本發明之特徵、目的、功能,及其達成所使用的技術手段;但所列舉之實施例僅為輔助說明,以利對本發明有更進一步的認知與瞭解,並不因此限制本發明的範圍及技術手段。在該等實施例的說明中,各層(膜)、區域、圖案或結構形成於基板、各層(膜)、區域、墊片或圖案之「上(on)」或「下(under)」的描述,該「上」及「下」係包括所有直接(directly)或間接(indirectly)被形成物。另外,對於各層之上或下,將以圖式為基準來進行說明。而為了說明上的便利和明確,圖式中各層的厚度或尺寸,係以概略的、誇張的、或簡要的方式表示,且各構成要素的尺寸並未完全為其實際尺寸。The features, objects, and functions of the present invention, as well as the technical means for achieving the same, are described in detail with reference to the accompanying drawings. It is understood that the scope and technical means of the invention are not limited thereby. In the description of the embodiments, the description of the "on" or "under" of each layer (film), region, pattern or structure formed on the substrate, layers (films), regions, spacers or patterns. The "upper" and "lower" systems include all direct or indirectly formed objects. In addition, the above or below each layer will be described based on the drawings. For the sake of convenience and clarity in the description, the thickness or size of each layer in the drawings is expressed in a rough, exaggerated or brief manner, and the dimensions of the constituent elements are not completely the actual size.

請參照圖1,為根據本發明一實施例之基板吸附裝置100的結構示意圖,該基板吸附裝置100包含:一基座110、一平台120、一熱調節單元130、一升降單元140、及一控制單元150;其特徵在於:藉由該熱調節單元130的致冷作用,而於該平台120的表面上形成一液滴分佈160,並藉由該液滴分佈160的表面張力作用,吸附一基板170於該平台120上。1 is a schematic structural diagram of a substrate adsorption apparatus 100 according to an embodiment of the present invention. The substrate adsorption apparatus 100 includes a base 110, a platform 120, a thermal adjustment unit 130, a lifting unit 140, and a The control unit 150 is characterized in that a droplet distribution 160 is formed on the surface of the platform 120 by the cooling action of the thermal conditioning unit 130, and the surface tension of the droplet distribution 160 acts to adsorb one. The substrate 170 is on the platform 120.

該基座110係用以支撐整個基板吸附裝置100的架構,其上設置具有致冷及加熱功能的該熱調節單元130;而為了保持致冷溫度的穩定,提供熱調節單元130熱傳散熱機制,以避免致冷時因溫度變化過大而影響凝結液滴的效率,因此該基座較佳地係由具有高熱傳導係數的材料所組成。該平台120用以承載並固定一基板170,以進行後續的製程或雷射加工,因此該平台120可選用玻璃或金屬材料所製成的具平坦表面的平台。值得注意的是,本實施例可適用於剛性或可撓性材料的基板,包括塑膠基板或軟性印刷電路(PCB)基板;在實際的實施案例中,則使用平整度佳的玻璃板平台,且針對可撓式液晶顯示器所用的軟性基板。The pedestal 110 is used to support the structure of the entire substrate adsorption device 100, and the thermal adjustment unit 130 having a cooling and heating function is disposed thereon; and in order to maintain the stability of the cooling temperature, the heat transfer mechanism of the thermal adjustment unit 130 is provided. In order to avoid the influence of excessive temperature change on the cooling during cooling, the susceptibility of the condensed droplets is affected, so that the susceptor is preferably composed of a material having a high thermal conductivity. The platform 120 is used to carry and fix a substrate 170 for subsequent processing or laser processing. Therefore, the platform 120 may be a platform with a flat surface made of glass or metal material. It should be noted that this embodiment can be applied to a substrate of a rigid or flexible material, including a plastic substrate or a flexible printed circuit (PCB) substrate; in a practical embodiment, a flat glass plate platform is used, and A flexible substrate for use in flexible liquid crystal displays.

該熱調節單元130設置於該基座110上,用以致冷以形成液滴分佈160於該平台120的表面及加熱以去除該平台120的表面的該液滴分佈160;其中本實施例將藉由該液滴分佈160的表面張力作用,緊密吸附該基板170於該平台120上,以避免或改善習知技術利用真空所形成的空氣壓力,而必須在吸附平台中裝置或鑽設微孔及溝槽的困難(尤其是在玻璃或陶瓷平板中鑽孔),及因真空的氣壓吸附所衍生出的問題。The thermal conditioning unit 130 is disposed on the susceptor 110 for cooling to form a droplet distribution 160 on the surface of the platform 120 and heating to remove the droplet distribution 160 of the surface of the platform 120; wherein the embodiment will By the surface tension of the droplet distribution 160, the substrate 170 is closely adsorbed on the platform 120 to avoid or improve the air pressure formed by the vacuum by the prior art, and the micropores must be installed or drilled in the adsorption platform. Difficulties in trenches (especially in glass or ceramic plates) and problems arising from air pressure adsorption of vacuum.

本實施例的熱調節單元130的結構可示意如圖2,其由一對以上的P型及N型半導體131/132串聯所構成,用以產生快速發熱或致冷的功用,其上及下端面封裝以陶瓷材料的勻熱板(Heat-distributing plates) 133/134,使整個熱調節單元130表面的發熱或致冷能均勻分布能均勻。該熱調節單元作用130時,一端面產生致冷,而另一端面則產生加熱。當該熱調節單元130施加直流電流後,可造成電能量轉換成熱能量:對於電流由N型半導體流向P型半導體的接頭135,其吸收熱量而為冷端;對於電流由P型半導體流向N型半導體的接頭136,其釋放熱量而為熱端。上述吸收或釋放的熱量大小可由該電流的大小及方向決定,而其由連結至該熱調節單元130的控制單元150所控制。本實施例的升降單元140係與該平台120連接,並使該平台120升降而接近或遠離該熱調節單元130;其可使用手動、自動、或半自動的方式升降移動該平台120,端視實際狀況而定。The structure of the thermal adjustment unit 130 of this embodiment can be schematically illustrated in FIG. 2, which is composed of a pair of P-type and N-type semiconductors 131/132 connected in series to generate a function of rapid heating or cooling, above and below The end face is packaged with ceramic-like heat-distributing plates 133/134 to uniformly distribute the heat or the cooling energy of the entire surface of the heat regulating unit 130. When the thermal conditioning unit acts 130, one end produces refrigeration and the other end produces heating. When the thermal regulation unit 130 applies a direct current, the electrical energy can be converted into thermal energy: for the current flowing from the N-type semiconductor to the junction 135 of the P-type semiconductor, the heat is absorbed as a cold end; for the current from the P-type semiconductor to the N A junction 136 of a semiconductor that releases heat and is a hot end. The amount of heat absorbed or released may be determined by the magnitude and direction of the current, which is controlled by control unit 150 coupled to the thermal conditioning unit 130. The lifting unit 140 of the embodiment is connected to the platform 120, and the platform 120 is raised and lowered to approach or away from the thermal adjustment unit 130; the platform 120 can be moved up and down using a manual, automatic, or semi-automatic manner, depending on the actual Depending on the situation.

當欲使平台120的表面形成液滴分佈時,可藉由該升降單元140而使該平台120接近至觸及該熱調節單元130而致冷該平台120,其中該液滴分佈的形成方式係選自蒸汽、凝結、及噴霧,而本實施例主要是藉由使該平台120表面的溫度降至低於露點(Dew point)溫度,使飽和蒸汽凝結於該平台120表面而形成該液滴分佈160。藉由液滴之表面張力作用而使該基板170與該平台120緊密吸附後,該液滴分佈160形成一液態膜(本實施例即為水膜),且該液態膜的厚度介於1μm及1000μm之間,本實施例的水膜則為約30μm。當欲自該平台120上分離出該基板170時,則使該熱調節單元130加熱該平台120以蒸發該水膜,即可去除該表面張力作用,而容易地取出該基板170。When the surface of the platform 120 is to be formed into a droplet distribution, the platform 120 can be brought close to the thermal adjustment unit 130 to cool the platform 120 by the lifting unit 140, wherein the formation of the droplet distribution is selected. Since the steam, coagulation, and spraying, the present embodiment mainly forms the droplet distribution 160 by causing the saturated steam to condense on the surface of the platform 120 by lowering the temperature of the surface of the platform 120 to below the Dew point temperature. . After the substrate 170 and the platform 120 are closely adsorbed by the surface tension of the droplets, the droplet distribution 160 forms a liquid film (in this embodiment, a water film), and the thickness of the liquid film is between 1 μm and The water film of this example was about 30 μm between 1000 μm. When the substrate 170 is to be separated from the platform 120, the thermal conditioning unit 130 is heated to the platform 120 to evaporate the water film, thereby removing the surface tension and easily removing the substrate 170.

該控制單元150連結至該熱調節單元130及該升降單元140,用以控制該熱調節單元130的致冷或加熱及該平台120的升降移動。本實施例的控制單元150包括:一電源供應器、一驅動電路以驅動該熱調節單元130並可做正負電極性的切換、及一控制電路,以控制該升降單元140。The control unit 150 is coupled to the thermal conditioning unit 130 and the lifting unit 140 for controlling the cooling or heating of the thermal conditioning unit 130 and the lifting movement of the platform 120. The control unit 150 of this embodiment includes: a power supply, a driving circuit to drive the thermal conditioning unit 130 and can perform positive and negative polarity switching, and a control circuit to control the lifting unit 140.

本實施例的操作流程或步驟可以併同以下述實施例的說明;圖3為根據本發明另一實施例之基板吸附方法的流程示意圖。請同時參照圖1及3,該吸附基板的方法200包含下列步驟:步驟210,提供一基板吸附裝置100,其包括:一平台120及一熱調節單元130;步驟220,移動該平台120直到接觸到該熱調節單元130;步驟230,藉由控制該熱調節單元130,致冷該平台120以形成一液滴分佈160於該平台120上;步驟240,置放一基板170於該平台120上,藉由該液滴分佈160的表面張力作用,吸附該基板170於該平台120上;及步驟250,該液滴分佈形成一液態膜於該基板170及該平台120之間;其中,該液滴分佈160可形成於該基板170的背面。關於該平台120、該熱調節單元130及基板170的描述請參照上一實施例的說明,在此不再贅述。The operation flow or the steps of the embodiment may be the same as the following embodiments; FIG. 3 is a schematic flow chart of the substrate adsorption method according to another embodiment of the present invention. Referring to FIG. 1 and FIG. 3 simultaneously, the method 200 for adsorbing a substrate includes the following steps: Step 210, providing a substrate adsorption device 100, comprising: a platform 120 and a thermal adjustment unit 130; and step 220, moving the platform 120 until contact To the thermal conditioning unit 130; in step 230, the platform 120 is cooled to form a droplet distribution 160 on the platform 120 by controlling the thermal conditioning unit 130; in step 240, a substrate 170 is placed on the platform 120. The substrate 170 is adsorbed on the platform 120 by the surface tension of the droplet distribution 160; and in step 250, the droplet distribution forms a liquid film between the substrate 170 and the platform 120; wherein the liquid A drop distribution 160 may be formed on the back side of the substrate 170. For a description of the platform 120, the thermal adjustment unit 130, and the substrate 170, refer to the description of the previous embodiment, and details are not described herein again.

該液滴分佈的形成方式可以是蒸汽、凝結、或噴霧的方式,而本實施例主要是藉由使該平台120表面的溫度降至低於露點溫度,使飽和蒸汽凝結於該平台120表面而形成該液滴分佈160。當飽和蒸氣與低於其飽和溫度的基板或平台表面相接觸時,會放出潛熱並冷凝形成液滴。液滴的形成條件與操作環境中空氣的溫度及濕度有關;藉由水凝結的原理、及操作環境溫度與相對濕度的關係,可推算水凝結所需的溫度。例如,請參考圖4之液滴凝結環境之溫溼度關係圖,一般潔淨室(Clean room)的相對濕度會控制在40%~50%之間,溫度則約在20℃~22℃之間,如圖4之框線區域所示,可知凝結發生的溫度在7℃~14℃的範圍,亦即將基板或平台的溫度藉由熱調節單元130而降至7℃以下,就可因凝結現象而於基板或平台上形成液滴分佈,再藉由液滴的表面張力而將基板平貼吸附,即完成整個吸附裝置及方法的運作。如上所述,該吸附基板的方法200因此可更包括一步驟205:提供一常壓的操作環境,其相對濕度至少為30%且溫度介於15℃與32℃之間,以營造水液滴凝結的適當環境。The droplet distribution may be formed by steam, condensation, or spraying. In this embodiment, the saturated steam is condensed on the surface of the platform 120 by lowering the temperature of the surface of the platform 120 to below the dew point temperature. This droplet distribution 160 is formed. When the saturated vapor comes into contact with the surface of the substrate or platform below its saturation temperature, latent heat is released and condensed to form droplets. The formation conditions of the droplets are related to the temperature and humidity of the air in the operating environment; the temperature required for water condensation can be estimated by the principle of water condensation and the relationship between the operating environment temperature and the relative humidity. For example, please refer to the temperature and humidity relationship diagram of the droplet condensation environment in Figure 4. The relative humidity of the clean room is controlled between 40% and 50%, and the temperature is between 20 °C and 22 °C. As shown in the frame line area of Fig. 4, it can be seen that the temperature at which the condensation occurs is in the range of 7 ° C to 14 ° C, that is, the temperature of the substrate or the platform is lowered to 7 ° C or less by the thermal adjustment unit 130, and the condensation phenomenon may occur. The droplet distribution is formed on the substrate or the platform, and the substrate is flatly adsorbed by the surface tension of the droplets, that is, the operation of the entire adsorption device and method is completed. As described above, the method 200 of adsorbing a substrate may thus further include a step 205 of providing a normal-pressure operating environment having a relative humidity of at least 30% and a temperature between 15 ° C and 32 ° C to create a water droplet. The proper environment for condensation.

藉由本實施例所揭示的吸附基板的方法,該方法更可進一步施用於後續的半導體製程或雷射加工,例如圖3所示之步驟260施加雷射加工的製程於該基板170上,並以該水膜做為保護層,避免雷射傷害該平台120及改善雷射加工的背面噴濺,尤其是波長355μm以上的雷射光源,但並不以此為限;或是步驟262加工處理該基板170,並以該水膜做為保護層,避免該基板170與該平台120因直接接觸而刮傷其表面;但並不以此為限,其亦可為其他形式基板加工或製程。最後,針對基板在製程結束後的取出,本實施例的方法200可進一步包含下列步驟:步驟270藉由控制該熱調節單元130,加熱該平台120以去除該液態膜或水膜;及步驟280自該平台120上分離並取出該基板170,而完成整個製作程序。With the method of adsorbing a substrate disclosed in this embodiment, the method can be further applied to a subsequent semiconductor process or laser processing, for example, a process of applying laser processing to the substrate 170 in step 260 shown in FIG. 3, and The water film is used as a protective layer to prevent the laser from harming the platform 120 and improving the backside splashing of the laser processing, especially the laser light source with a wavelength above 355 μm, but not limited thereto; or the processing of the step 262 The substrate 170 is used as a protective layer to prevent the substrate 170 from being scratched by direct contact with the platform 120. However, it is not limited thereto, and may be processed or processed by other forms of substrates. Finally, for the removal of the substrate after the end of the process, the method 200 of the embodiment may further include the following steps: Step 270: heating the platform 120 to remove the liquid film or water film by controlling the thermal adjustment unit 130; and step 280 The substrate 170 is separated and taken out from the platform 120 to complete the entire fabrication process.

唯以上所述者,包含:特徵、結構、及其它類似的效果,僅為本發明之較佳實施例,當不能以之限制本發明的範圍。上述各實施例所展示的特徵、結構、及其它類似的效果,亦可為該領域所屬的技藝人士在依本發明申請專利範圍進行均等變化及修飾,仍將不失本發明之要義所在,亦不脫離本發明之精神和範圍,故都應視為本發明的進一步實施狀況。此外,上述各實施例所描述者只能算是實施範例,並不能因此限制本發明的範圍。例如,各實施例所使用的元件或單元,可為該領域所屬的技藝人士進行修改及實現,仍將不失本發明之要義。The above description includes the features, structures, and other similar effects, which are merely preferred embodiments of the present invention, and the scope of the present invention is not limited thereto. The features, structures, and other similar effects shown in the above embodiments may also be varied and modified by those skilled in the art in accordance with the scope of the present invention, and the present invention will remain without departing from the scope of the present invention. Further implementations of the invention are considered to be within the spirit and scope of the invention. Moreover, the embodiments described above are merely exemplary embodiments and are not intended to limit the scope of the invention. For example, the elements or units used in the various embodiments can be modified and implemented by those skilled in the art, without departing from the scope of the invention.

100...基板吸附裝置100. . . Substrate adsorption device

110...基座110. . . Pedestal

120...平台120. . . platform

130...熱調節單元130. . . Thermal conditioning unit

131...P型半導體131. . . P-type semiconductor

132...N型半導體132. . . N-type semiconductor

133/134...勻熱板133/134. . . Homogenizing plate

135/136...接頭135/136. . . Connector

140...升降單元140. . . Lifting unit

150...控制單元150. . . control unit

160...液滴分佈160. . . Droplet distribution

170...基板170. . . Substrate

200...吸附基板方法200. . . Adsorption substrate method

步驟205/210/220/230/240/250/260/262/270/280Steps 205/210/220/230/240/250/260/262/270/280

圖1根據本發明一實施例之基板吸附裝置的結構示意圖。1 is a schematic view showing the structure of a substrate adsorption device according to an embodiment of the present invention.

圖2本實施例之熱調節單元的P型及N型半導體串聯結構示意圖。2 is a schematic view showing a series connection structure of a P-type and an N-type semiconductor of the thermal conditioning unit of the present embodiment.

圖3根據本發明另一實施例之基板吸附方法的流程示意圖。3 is a schematic flow chart of a substrate adsorption method according to another embodiment of the present invention.

圖4液滴凝結環境之溫溼度關係圖。Figure 4 is a graph showing the temperature and humidity relationship of the droplet condensation environment.

100...基板吸附裝置100. . . Substrate adsorption device

110...基座110. . . Pedestal

120...平台120. . . platform

130...熱調節單元130. . . Thermal conditioning unit

140...升降單元140. . . Lifting unit

150...控制單元150. . . control unit

160...液滴分佈160. . . Droplet distribution

170...基板170. . . Substrate

Claims (29)

一種基板吸附裝置,其包括:一基座;一平台,用以承載一基板;一熱調節單元,其係設置於該基座上,用以致冷以形成一液滴分佈於該平台的表面及加熱以去除該平台的表面的該液滴分佈,其中該液滴分佈用以吸附該基板於該平台上;一升降單元,其係連結至該平台,用以使該平台升降而接近或遠離該熱調節單元;及一控制單元,連結至該熱調節單元及該升降單元,用以控制該熱調節單元的致冷或加熱及該平台的升降移動。A substrate adsorption device comprising: a base; a platform for carrying a substrate; a thermal adjustment unit disposed on the base for cooling to form a droplet distributed on a surface of the platform and Heating to remove the droplet distribution of the surface of the platform, wherein the droplet distribution is for adsorbing the substrate on the platform; a lifting unit coupled to the platform for lifting the platform to approach or away from the platform a thermal conditioning unit; and a control unit coupled to the thermal conditioning unit and the lifting unit for controlling refrigeration or heating of the thermal conditioning unit and lifting movement of the platform. 如申請專利範圍第1項所述之基板吸附裝置,其中該基座係由具有高熱傳導係數的材料所組成。The substrate adsorption device of claim 1, wherein the base is composed of a material having a high heat transfer coefficient. 如申請專利範圍第1項所述之基板吸附裝置,其中該平台係為玻璃或金屬材料所組成。The substrate adsorption device of claim 1, wherein the platform is made of glass or a metal material. 如申請專利範圍第1項所述之基板吸附裝置,其中該熱調節單元包含:一對的P型及N型半導體;及二勻熱板,分別作為該P型及N型半導體封裝的上及下端面,使該熱調節單元表面的發熱或致冷能均勻分布。The substrate adsorption device of claim 1, wherein the thermal conditioning unit comprises: a pair of P-type and N-type semiconductors; and two heat-radiating plates respectively serving as the P-type and N-type semiconductor packages The lower end surface uniformly distributes heat or cooling of the surface of the thermal conditioning unit. 如申請專利範圍第4項所述之基板吸附裝置,其中該熱調節單元更包含:二對以上的P型及N型半導體,其係相互串聯。The substrate adsorption device of claim 4, wherein the thermal conditioning unit further comprises: two or more pairs of P-type and N-type semiconductors connected in series with each other. 如申請專利範圍第4項所述之基板吸附裝置,其中該勻熱板係為陶瓷材料所組成。The substrate adsorption device according to claim 4, wherein the heat equalizing plate is composed of a ceramic material. 如申請專利範圍第1項所述之基板吸附裝置,其中該升降單元可使用手動、自動、或半自動的方式升降移動該平台。The substrate adsorption device of claim 1, wherein the lifting unit can move the platform up and down using a manual, automatic, or semi-automatic manner. 如申請專利範圍第1項所述之基板吸附裝置,其中該液滴分佈的形成方式係選自蒸汽、凝結、及噴霧。The substrate adsorption device of claim 1, wherein the droplet distribution is formed by steam, condensation, and spraying. 如申請專利範圍第1項所述之基板吸附裝置,其中在該基板及該平台緊密吸附後,該液滴分佈形成一液態膜。The substrate adsorption device of claim 1, wherein the droplets are distributed to form a liquid film after the substrate and the platform are closely adsorbed. 如申請專利範圍第9項所述之基板吸附裝置,其中該液態膜係為一水膜。The substrate adsorption device according to claim 9, wherein the liquid film is a water film. 如申請專利範圍第9項所述之基板吸附裝置,其中該液態膜的厚度介於1μm及1000μm之間。The substrate adsorption device according to claim 9, wherein the liquid film has a thickness of between 1 μm and 1000 μm. 如申請專利範圍第1項所述之基板吸附裝置,其中該控制單元包括:一電源供應器;一驅動電路,以驅動該熱調節單元,並可做正負電極性的切換;及一控制電路,以控制該升降單元。The substrate adsorption device of claim 1, wherein the control unit comprises: a power supply; a driving circuit for driving the thermal adjustment unit, and can perform positive and negative polarity switching; and a control circuit, To control the lifting unit. 如申請專利範圍第1項所述之基板吸附裝置,其中該基板係為一軟性或可撓性材料所組成。The substrate adsorption device of claim 1, wherein the substrate is composed of a soft or flexible material. 如申請專利範圍第13項所述之基板吸附裝置,其中該基板係為塑膠基板或軟性印刷電路基板。The substrate adsorption device according to claim 13, wherein the substrate is a plastic substrate or a flexible printed circuit substrate. 一種吸附基板的方法,其包括:提供一基板吸附裝置,其包括:一平台及一熱調節單元;移動該平台直到接觸到該熱調節單元;及藉由控制該熱調節單元,致冷該平台以形成一液滴分佈於該平台上。A method of adsorbing a substrate, comprising: providing a substrate adsorption device comprising: a platform and a thermal conditioning unit; moving the platform until contacting the thermal conditioning unit; and cooling the platform by controlling the thermal conditioning unit To form a droplet distributed on the platform. 如申請專利範圍第15項所述之吸附基板的方法,其中該液滴分佈係形成於該基板的背面。The method of adsorbing a substrate according to claim 15, wherein the droplet distribution is formed on a back surface of the substrate. 如申請專利範圍第15項所述之吸附基板的方法,更包括:置放一基板於該平台上,藉由該液滴分佈的表面張力作用,吸附該基板於該平台上;及該液滴分佈形成一液態膜於該基板及該平台之間。The method for adsorbing a substrate according to claim 15 , further comprising: placing a substrate on the platform, adsorbing the substrate on the platform by a surface tension of the droplet distribution; and the droplet The distribution forms a liquid film between the substrate and the platform. 如申請專利範圍第17項所述之吸附基板的方法,其中該液態膜係為一水膜。The method of adsorbing a substrate according to claim 17, wherein the liquid film is a water film. 如申請專利範圍第18項所述之吸附基板的方法,其中該液滴分佈係藉由該平台表面的溫度降至低於露點溫度,使飽和蒸汽凝結於該平台表面而形成。The method of adsorbing a substrate according to claim 18, wherein the droplet distribution is formed by condensing saturated steam on the surface of the platform by lowering the temperature of the surface of the platform to below the dew point temperature. 如申請專利範圍第18項所述之吸附基板的方法,更包括:提供一操作環境,其相對濕度至少為30%且溫度介於15℃與32℃之間。The method of adsorbing a substrate according to claim 18, further comprising: providing an operating environment having a relative humidity of at least 30% and a temperature between 15 ° C and 32 ° C. 如申請專利範圍第18項所述之吸附基板的方法,更包括:施加雷射加工的製程於該基板上,並以該水膜做為保護層,避免雷射傷害該平台及改善雷射加工的背面噴濺。The method for adsorbing a substrate according to claim 18, further comprising: applying a laser processing process to the substrate, and using the water film as a protective layer to prevent laser damage to the platform and improving laser processing. The back of the splash. 如申請專利範圍第18項所述之吸附基板的方法,更包括:加工處理該基板,並以該水膜做為保護層,避免該基材與該平台因直接接觸而刮傷其表面。The method for adsorbing a substrate according to claim 18, further comprising: processing the substrate, and using the water film as a protective layer to prevent the substrate from being scratched by direct contact with the platform. 如申請專利範圍第15項所述之吸附基板的方法,其中該平台係為玻璃或金屬材料所組成。The method of adsorbing a substrate according to claim 15, wherein the platform is made of glass or a metal material. 如申請專利範圍第15項所述之吸附基板的方法,其中該熱調節單元包含:一對的P型及N型半導體;及二勻熱板,分別作為該P型及N型半導體封裝的上及下端面,使該熱調節單元表面的發熱或致冷能均勻分布。The method of adsorbing a substrate according to claim 15, wherein the thermal conditioning unit comprises: a pair of P-type and N-type semiconductors; and two uniformizing plates respectively serving as the P-type and N-type semiconductor packages. And the lower end surface, the heat or the cooling energy of the surface of the thermal conditioning unit is evenly distributed. 如申請專利範圍第24項所述之吸附基板的方法,其中該熱調節單元更包含:二對以上的P型及N型半導體,其係相互串聯。The method of adsorbing a substrate according to claim 24, wherein the thermal conditioning unit further comprises: two or more pairs of P-type and N-type semiconductors connected in series with each other. 如申請專利範圍第24項所述之吸附基板的方法,其中該勻熱板係為陶瓷材料所組成。The method of adsorbing a substrate according to claim 24, wherein the leveling plate is composed of a ceramic material. 如申請專利範圍第15項所述之吸附基板的方法,其中該液滴分佈的形成方式係選自蒸汽、凝結、及噴霧,且該液態膜的厚度介於1μm及1000μm之間。The method of adsorbing a substrate according to claim 15, wherein the droplet distribution is formed by steam, coagulation, and spraying, and the liquid film has a thickness of between 1 μm and 1000 μm. 如申請專利範圍第15項所述之吸附基板的方法,其中該基板係為一軟性或可撓性材料所組成。The method of adsorbing a substrate according to claim 15, wherein the substrate is composed of a soft or flexible material. 如申請專利範圍第17項所述之吸附基板的方法,更包括:藉由控制該熱調節單元,加熱該平台以去除該液態膜;及自該平台上分離並取出該基板。The method of adsorbing a substrate according to claim 17, further comprising: heating the platform to remove the liquid film by controlling the thermal conditioning unit; and separating and removing the substrate from the platform.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030132193A1 (en) * 2002-01-17 2003-07-17 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US20050122505A1 (en) * 2003-12-08 2005-06-09 Canon Kabushiki Kaisha Substrate-holding technique
US20080285203A1 (en) * 2007-01-31 2008-11-20 Nissin Ion Equipment Co., Ltd. Substrate hold apparatus and method for judging substrate push-up state
US20090086400A1 (en) * 2007-09-28 2009-04-02 Intevac, Inc. Electrostatic chuck apparatus
US20090218460A1 (en) * 2008-03-03 2009-09-03 Tokyo Ohka Kogyo Co., Ltd. Sucking and holding device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030132193A1 (en) * 2002-01-17 2003-07-17 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US20050122505A1 (en) * 2003-12-08 2005-06-09 Canon Kabushiki Kaisha Substrate-holding technique
US20080285203A1 (en) * 2007-01-31 2008-11-20 Nissin Ion Equipment Co., Ltd. Substrate hold apparatus and method for judging substrate push-up state
US20090086400A1 (en) * 2007-09-28 2009-04-02 Intevac, Inc. Electrostatic chuck apparatus
US20090218460A1 (en) * 2008-03-03 2009-09-03 Tokyo Ohka Kogyo Co., Ltd. Sucking and holding device

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