TWI399866B - Solid-state light-emitting element - Google Patents

Description

Solid state light emitting element

The present invention relates to a light-emitting element, and more particularly to a solid-state light-emitting element.

At present, the Light Emitting Diode (LED) is a solid-state light-emitting element that has a good light quality (that is, a spectrum of light source output) and high luminous efficiency, and gradually replaces the cold cathode fluorescent lamp (Cold Cathode Fluorescent Lamp). , CCFL) as a illuminating element of a lighting device, see "Spider-State Lighting: Toward Superior" by Michael S. Shur et al., Proceedings of the IEEE, Vol. 93, No. 10 (October 2005). Illumination" article.

A general light emitting diode (LED) includes a light emitting structure and positive and negative electrodes, and the light emitting structure includes: an N-type Cladding layer, a P-type binding layer, and a N-type binding layer disposed on the N-type binding layer An undoped active layer between the P-type tie layers, the positive electrode is disposed on the P-type tie layer, and the negative electrode is disposed on the N-type tie layer. The light-emitting diode generally emits light of a specific wavelength, such as visible light, but about 80-90% of the energy received by the light-emitting diode is converted into heat, and the remaining energy is actually converted into light energy. When the temperature of the light-emitting diode reaches 70 degrees or more, the light is emitted The quantum efficiency in the diode is significantly reduced, so the heat dissipation efficiency of the LED is an important factor to ensure its normal operation. In view of this, it is necessary to provide a solid-state light-emitting element having high heat dissipation efficiency.

A solid state light-emitting element having high heat dissipation efficiency will be described below by way of example.

A solid-state light-emitting device comprising a transparent conductive substrate, a first-type binding layer disposed on the transparent conductive substrate, a light-emitting active layer disposed on the first-type binding layer, and a light-emitting active layer disposed on the light-emitting active layer The second type of binding layer is an electrode disposed on the second type of binding layer, and the material of the transparent conductive substrate is hydrogenated tantalum carbide.

Compared with the prior art, the material used for the transparent conductive substrate in the solid-state light-emitting element is hydrogenated tantalum carbide, and the heat generated by the solid-state light-emitting element can be efficiently and efficiently conducted by using the high thermal conductivity of the hydrogenated tantalum carbide. Solid state light emitting elements maintain high quantum efficiency. The high conductivity of the hydrogenated ruthenium carbide can be used as an electrode directly, so that photons emitted from the luminescent active layer can be directly emitted through the transparent conductive substrate without obstruction, thereby improving light extraction. effectiveness.

10‧‧‧Lighting diode

11‧‧‧Transparent conductive substrate

12‧‧‧N-type binding layer

13‧‧‧Lighting active layer

14‧‧‧P-type binding layer

15‧‧‧Electrode

16‧‧‧Nano particles

1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.

The solid state light-emitting device of the present invention will be further described in detail below with reference to the accompanying drawings.

For ease of understanding, the solid state light emitting device provided by the embodiment of the present invention will be hereinafter described below. The case of a light-emitting diode will be described as an example. Referring to FIG. 1 , a light-emitting diode 10 includes a transparent conductive substrate 11 , an N-type binding layer 12 disposed on the transparent conductive substrate 11 , and a light-emitting active layer 13 disposed on the N-type binding layer 12 . A P-type binding layer 14 disposed on the luminescent active layer 13 and an electrode 15 disposed on the P-type binding layer 14. The N-type tie layer 12, the luminescent active layer 13 and the P-type tie layer 14 constitute a light-emitting structure.

The material of the transparent conductive substrate 11 is hydrogenated tantalum carbide (SiC: H). Since the hydrogenated tantalum carbide is a material having high electrical conductivity and thermal conductivity, the heat generated when the light emitting diode 10 emits light can The transparent conductive substrate 11 is conducted in time and effectively, so that the light emitting diode 10 maintains a high quantum efficiency, and the transparent conductive substrate 11 can be electrically connected to the electrode 15 and an external power source as another electrode. Electrical energy is supplied to the light emitting structure. In this embodiment, photons emitted by the light emitting structure can be directly emitted through the transparent conductive substrate 11 without obstructing, thereby improving light extraction efficiency. The use of the electrode on the transparent conductive substrate 11 can also simplify the process and reduce the cost of the light-emitting diode 10.

The N-type binding layer 12 is an N-type semiconductor layer containing the nanoparticles 16 . The material for the N-type semiconductor layer may be selected from the group consisting of N-type GaN, N-type InP, N-type InGaP, and N-type phosphorus. One of aluminum gallium indium (n-type AlGaInP). In the present embodiment, the N-type tie layer 12 is composed of germanium-doped gallium nitride.

The material of the nanoparticle 16 is cerium oxide, cerium nitride, aluminum oxide, gallium oxide or boron nitride. In this embodiment, the nanoparticle 16 is dioxide. Nanoparticles with a particle size ranging from 20 to 200 nm.

The material used for the luminescent active layer 13 is indium gallium nitride (InGaN), aluminum gallium arsenide (AlGaAs), or the like, and has a single quantum well structure (Single Quantum Well) or a multi-quantum well structure (Multi-Quantum Well).

The P-type binding layer 14 is a P-type semiconductor layer containing the nanoparticles 16 . The material for the P-type semiconductor layer may be selected from p-type aluminum gallium nitride (p-type AlGaN), p-type aluminum gallium arsenide (p-type AlGaAs), or the like. Here, the P-type semiconductor layer can be obtained by doping magnesium or hydrogen in aluminum gallium nitride.

The material used for the doped nanoparticles 16 in the P-type semiconductor layer may also be selected from the group consisting of tantalum oxide, tantalum nitride, aluminum oxide, gallium oxide or boron nitride. It can be understood that the concentration distribution of the nanoparticle 16 in the N-type binding layer 12 and the P-type binding layer 14 can be set according to actual needs.

The material of the electrode 15 is nickel (Ni), gold (Au), nickel gold alloy (Ni/Au), titanium (Ti), aluminum (Al), titanium aluminum alloy (Ti/Al), copper (Cu), silver. (Ag), aluminum-copper alloy (Al/Cu), or silver-copper alloy (Ag/Cu).

In this embodiment, the N-type binding layer 12 can be formed by Metal Organic Chemical Vapor Deposition (MOCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD). The P-type binding layer 14 is formed on the transparent conductive substrate 11 and the luminescent active layer 13, respectively, and the electrode 15 is deposited on the P-type binding layer 14 by magnetron sputtering.

Since the N-type binding layer 12 is an N-type semiconductor layer containing nano particles 16, the P The type tie layer 14 is a P-type semiconductor layer containing the nano particles 16, and the N-type semiconductor layer and the P-type semiconductor layer contain nano particles, thereby preventing the N-type tie layer 12 and the luminescent active layer 13 from being blocked. a dislocation motion formed between the P-type binding layer 14 and the luminescent active layer 13 to enhance the crystal properties of the luminescent active layer 13, thereby improving the quantum efficiency of the luminescent structure, that is, the luminescent activity. The photon conversion efficiency in layer 13 is higher. In addition, the nanoparticles in the N-type tie layer 12 and the P-type tie layer 14 can change the lattice constant of the N-type semiconductor layer or the P-type semiconductor layer, and the N-type tie layer 12 is reduced. Lattice Strain with the P-type tie layer 14 itself, thereby facilitating reduction between the N-type tie layer 12 and the luminescent active layer 13, and the P-type tie layer 14 and the luminescent active layer 13 The inter-stress is beneficial to increase the quantum efficiency inside the light-emitting diode 10.

In addition, the light-emitting structure in the light-emitting diode 10 provided by the embodiment of the present invention has higher quantum efficiency, and quantum dots are not needed in the light-emitting structure, so that the light-emitting diode 10 and the light-emitting diode 10 are Conventional light-emitting diodes are more suitable for mass production than conventional light-emitting diodes.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. For example, the P-type binding layer 14 is grown on the transparent conductive substrate 11, the luminescent active layer 13 is epitaxially grown on the P-type binding layer 14, and the N-shaped binding layer 12 is grown on the In the luminescent active layer 13, the luminescent active layer 13 is also interposed between the P-type semiconductor layer containing the nanoparticles and the N-type semiconductor layer containing the nanoparticles. The light-emitting diode provided by the embodiment of the invention can also have better quantum efficiency. Therefore, such changes or other solid-state light-emitting elements that provide substantially the same structural principle as the light-emitting diodes are intended to be included in the following claims.

10‧‧‧Lighting diode

11‧‧‧Transparent conductive substrate

12‧‧‧N-type binding layer

13‧‧‧Lighting active layer

14‧‧‧P-type binding layer

15‧‧‧Electrode

16‧‧‧Nano particles

Claims (7)

A solid-state light-emitting device comprising a transparent conductive substrate, a first-type binding layer disposed on the transparent conductive substrate, a light-emitting active layer disposed on the first-type binding layer, and a light-emitting active layer disposed on the light-emitting active layer a second type of tie layer, an electrode disposed on the second type of tie layer, wherein the transparent conductive substrate is made of hydrogenated tantalum carbide, wherein the first type of tie layer and the second type of tie layer Each is a first type semiconductor layer containing nano particles and a second type semiconductor layer containing nano particles. The solid-state light-emitting device according to claim 1, wherein the material of the nanoparticle is cerium oxide, cerium nitride, aluminum oxide, gallium oxide or boron nitride. The solid-state light-emitting device according to claim 2, wherein the nanoparticle has a particle diameter of 20 to 200 nm. The solid-state light-emitting device according to claim 1, wherein the first-type semiconductor layer is an N-type semiconductor layer, and the second-type semiconductor layer is a P-type semiconductor layer. The solid-state light-emitting device according to claim 4, wherein the material for the N-type semiconductor layer is N-type gallium nitride, N-type indium phosphide, N-type indium phosphide or N-type aluminum gallium indium phosphide. . The solid-state light-emitting device of claim 4, wherein the material of the P-type semiconductor layer is P-type aluminum gallium nitride or P-type aluminum gallium arsenide. The solid state light emitting device of claim 4, wherein the light emitting The active layer has a single quantum well structure or a multiple quantum well structure.