TWI395402B - Resonator, oscillator and communication device - Google Patents

Description

Resonator, oscillator and communication device

The present invention relates to a resonator using mechanical resonance, an oscillator using the resonator, and a communication device provided with the oscillator.

With the recent advancement of wireless communication technology, it is required to reduce the size and weight of communication equipment using the wireless communication technology. Microelectromechanical systems (MEMS) technology, which is capable of fabricating fine mechanical structures based on microprocessing techniques for semiconductor processing, has employed processing of RF signal processor units that were previously difficult to reduce in size.

As an example, mechanical resonators using mechanical resonance are known. It is expected that RF components, such as filters, oscillators, and mixers, that will use the mechanical resonator will be applied to the field of communication because they are small in size and can be integrated. The mechanical resonator technology is disclosed in Japanese Patent Application Laid-Open No. 2006-33740 (Patent Document 1) and U.S. Patent Application Serial No. 6,249,073 (Patent Document 2).

A resonator having a small insertion loss and a high Q-value is required to manufacture an oscillator by using the resonator. Since the mechanical resonator has a high impedance, the same resonant element must be connected in parallel, that is, by parallel connection to reduce the impedance, whereas the parallel connection causes the Q-value of the resonator to decrease.

There are two possible factors that cause a Q-value reduction of a parallel resonator using mechanical oscillations: (1) a difference in the characteristics of the individual cell resonator elements in the parallel resonator; and (2) the kinetic energy of the oscillating component via the support The component leaks to the substrate. Factor (2) is also applicable to a single cell resonator. The two factors will be explained.

The factor (1) will be described in detail. In order to reduce the insertion loss of the mechanical resonator, it may be necessary to connect the same resonator elements in parallel to reduce the impedance. One possible way to connect the cell resonators in parallel is, as is generally shown in Figures 35A and 35B, such that a plurality of resonator elements are arranged in a grid array pattern for parallel connections. The parallel resonator 1 shown in Figs. 35A and 35B is configured by configuring the unit resonator element 2 shown in Fig. 36 into an array pattern.

As shown in FIG. 36, the resonator element 2 is formed by forming an input electrode (so-called input signal line) 4 and an output electrode (so-called output signal line) 5 on the substrate 3, and oscillating the component (so-called beam). 7 is configured to be supported in the air above the input/output electrodes 4, 5 and maintained at an interval 6 therebetween. The oscillating assembly 7 is configured such that its two terminals are supported by the support assemblies 8 (8A, 8B) on the interconnect layer 9 and span the input/output electrodes 4, 5. As shown in FIGS. 35A and 35B, the parallel resonator 1 is configured to configure a plurality of resonator elements 2 (see FIG. 36) in an array pattern on the common substrate 3, and to oscillate at each line of the conductive base 9. The support assemblies 8A, 8B of the assembly 7 and the independent oscillating assembly 7 are connected in common by connecting the pedestals 9 at the ends of each line. The oscillating component 7 is supplied with a DC bias voltage V. On the other hand, the input electrodes 4 configured to be crossed by the oscillation unit 7 are commonly connected to the input electrode 4, and the output electrodes 5 configured to be crossed by the oscillation unit 7 are commonly connected to the output electrode 5.

After comparing the outer circumferential area and the central area of the array, the independent resonator elements 2 differ in oscillation frequency in view of the oscillation characteristics in the configuration shown in FIG. There are two possible factors that cause a difference in the resonant frequency. One of the factors is that the stress placed on the oscillating component (so-called oscillating component 7) is different between the central region and the outer circumferential region, and other factors are structural differences in film thickness (especially, film thickness of the oscillating component) It tends to occur at the center or circumference of the array in the manufacturing process of the resonator element 2.

Therefore, any dispersion in the number of waves of the parallel resonator 1 may lower the Q-value compared to the Q-value of a single resonator. In order to avoid causing a decrease in the Q-value when performing this parallel configuration, it may be necessary to reduce the difference in the resonant frequency of the parallel resonator. However, in the example in which the resonator element 2 is arranged in an array pattern, it is difficult to exclude the difference in the stress associated with the oscillating component and the structural difference in the resonator element.

The factor (2) will be described in detail. In order to improve the Q-value of the resonator, it is important to prevent the kinetic energy of the oscillating component from leaking to the substrate. In the resonator element 2 configured according to the array pattern, the independent oscillation unit 7 is supported by the support unit 8 (8A, 8B) in a manner of separating the independent oscillation unit 7 from the oscillation unit 7 of the adjacent resonator element 2 (see Fig. 35B). ) supported. Therefore, part of the oscillating kinetic energy of the independent resonator element 2 may leak to the substrate 3 via the support assembly 8 (8A, 8B), and thus the Q-value may be degraded.

The present invention has been conceived in view of the foregoing, and provides a parallel resonator with improved Q-values by equalizing the structure of the individual resonator elements and the stresses applied to the individual resonator elements.

The present invention also provides an oscillator using the above resonator, and a communication device having the same.

According to an embodiment of the invention, there is provided a resonator comprising a plurality of resonator elements, each having an electrode and an oscillating component opposite the electrode and maintaining a spacing therebetween, the resonator elements being arranged to form a closed A system wherein the oscillating components of the plurality of resonator elements are continuously formed in an integrated manner.

In a resonator of the present invention configured to have a parallel resonator in which a plurality of resonator elements are coupled, the plurality of resonator elements are configured to form a closed system, and the oscillating components of the plurality of resonator elements are The integrated mode is continuously formed such that the structures of the individual resonator elements are equalized and the stress applied to the oscillating components of the individual resonator elements is equalized.

According to the present invention, there is also provided an oscillator configured by using a resonator, the resonator comprising a plurality of resonator elements each having an electrode and an oscillating component opposite the electrode and remaining therebetween The resonator elements are arranged to form a closed system, wherein the oscillating components of the plurality of resonator elements are continuously formed in an integrated manner.

The oscillator of the present invention is configured using a parallel resonator comprising the plurality of resonator elements configured to form a closed system and having the plurality of resonators continuously formed in an integrated manner. The structures of the individual resonator elements in the parallel resonator are equalized and the stress applied to the oscillating components of the individual resonator elements is equalized, thus making it possible to obtain excellent oscillator characteristics.

According to the present invention, there is provided a communication device having an oscillator circuit for frequency conversion, which is configured using an oscillator, the oscillator comprising a plurality of resonator elements each having an electrode and an oscillating component and configured The resonator elements are equalized to form a closed system, wherein the oscillating components of the plurality of resonator elements are continuously formed in an integrated manner.

The communication device of the present invention uses the above-described oscillator configured as the parallel resonator to obtain excellent characteristics.

According to the resonator of the present invention, a parallel resonator having a large Q-value is provided. According to the oscillator of the present invention, an oscillator having high frequency stability is provided.

According to the communication device of the present invention, a communication device that ensures excellent oscillator characteristics and high reliability is provided.

With reference to the drawings, the embodiments of the invention are explained in the following paragraphs.

First, reference is made to Figs. 1A and 1B to explain the configuration and operational principle of a single unit constituting the resonator element of the resonator of this embodiment. The resonator elements highlighted in this embodiment are micro-resonator elements of micron size and nanometer size. The resonator element 21 exemplified in this embodiment has an oscillating component (so-called beam) 24, and an input electrode (so-called input signal line) 26 and an output electrode (so-called output signal line) 27 mechanical resonator element. The oscillating assembly functions as an oscillator and is held in the air above the substrate 22 with the aid of a support assembly 23 at its two ends, the input electrode and the output electrode being used as a lower electrode, as previously described, the resonator The components are attached to the substrate 22 such that the electrodes span the oscillating assembly 24 and remain at an interval 25 therebetween. Support assembly 23 is formed to be coupled to conductive base 28 on substrate 22.

When the signal input from the input electrode 26 directs an external force based on the electrostatic force to the oscillating component 24 to which the direct current (DC) bias voltage V is applied, and the oscillation is transmitted as a signal to the output electrode 27 via the microinterval 25, the resonator element 21 Oscillation at a particular resonant frequency of the oscillating assembly 24. The resonator element 21 is a resonator element that uses a secondary mode bending oscillation.

A first embodiment of the resonator (or so-called parallel resonator) of an embodiment of the invention is shown in Figures 2 to 4 . These figures show a schematic configuration, Figure 2 is an overall plan view of the resonator, Figure 3 is a plan view of the cell resonator elements in the resonator, and Figure 4 is a cross-sectional view of the cell resonator elements (Figure 3 In the line BB obtained).

The resonator 31 of this embodiment is configured by arranging a plurality of the above resonator elements 21 in a closed pattern on a substrate, and the oscillating members 24 of the plurality of resonator elements 21 are continuously formed in an integrated manner. . The substrate 22 is composed of a substrate having an insulating property on the surface, and the lower electrodes are formed on the surface. For example, a semiconductor substrate having an insulating film formed thereon, or an insulating glass substrate or the like can be used as the substrate. All of the resonator elements 21 arranged in a parallel configuration are arranged in a ring shape such that the elements are arranged point-symmetrically with respect to the center of the closed system, and are annularly arranged in this embodiment to form a ring shape. In this example, a continuous integrated oscillating assembly 24 having a closed geometry is formed in accordance with a toroid.

In other words, the plurality of resonator elements 21 are arranged in a line or a circle to alternately arrange the anti-nodes and nodes of the oscillation of the oscillation unit 24.

The input electrode 26 of the independent resonator element 21 is connected to a wiring 41 which forms a concentric circuit shape on the inner side or the outer side (to form a so-called input signal line together with the input electrode 26). In this embodiment, the ring oscillation unit 24 is "inside". . The output electrode 27 of the independent resonator element 21 is connected to a wiring 42 which forms a concentric circuit shape on the inner side or the outer side (along with the output electrode 27 forms a so-called output signal line), and in this embodiment, the ring-shaped oscillation unit 24 is "outside". . The electrode pad or the so-called input terminal t1 is obtained by extending inwardly from the concentric circuit-shaped wiring 41 on the input side, and the electrode pad or the so-called output terminal t2 is a wiring of a concentric circuit shape from the output side. 42 is extended outwards.

In addition, a closed annular oscillating assembly 24 is formed to maintain the anti-node to anti-node distance and node-to-node distance of the oscillation constant. The length of the closed annular oscillator assembly 24 is an integer multiple of the oscillation wavelength. In other words, the oscillating components 24 are formed in a circular connection to keep the number of anti-nodes and nodes of the oscillations the same and an even number.

A support assembly 23 of the continuum assembly of the oscillating assembly 24 is formed at the nodes of the oscillation. In this embodiment, as shown in FIG. 4, at both ends, in other words, at every other node of the oscillation, the support member 23 is disposed and the input electrode 26 and the output electrode 27 of the unit resonator element are interposed therebetween. 4 is a schematic view, and the base 28 connected to the support assembly 23 shown in FIG. 1 is omitted. The support assembly 23 is not limited to be provided at every other node, but may be provided at each node, or every two or more nodes, to the extent that the intensity of the oscillating component 24 may arrive, that is, The extent to which the oscillating assembly 24 does not come into contact with the lower electrodes 26, 27.

The resonator 31 of this embodiment is configured by, for example, connecting twenty-four unit resonator elements 21 shown in Fig. 1 according to a circular pattern.

The resonator 31 of the first embodiment is configured by configuring the resonator element 21 according to a circular pattern, and for each of the resonator elements 21, the integral resonator 31 and the unit resonator element 21 based on the parallel arrangement are respectively The positional relationship between the persons is equalized, and structural differences in the resonator element 21 are less likely to occur. It is also possible to equalize the stress on the oscillating component 24 applied to each of the unit resonator elements 21. Therefore, it is possible to suppress the difference in the characteristics of the independent resonator elements, it is possible to suppress the Q-value reduction caused by the parallel configuration, and thus it is possible to obtain the Q-value equivalent to that expected by the unit resonator.

The oscillating assembly 24 of the plurality of resonator elements 21 arranged according to the annular pattern is formed in a continuous integrated manner as shown in FIG. 2 such that the number of support members 23 associated with the number of anti-nodes of oscillation becomes small, and thus via the support assembly The oscillation kinetic energy leaking to the side of the substrate 22 becomes small. In other words, a part of the kinetic energy leaking to the substrate side contributes to the oscillation of the adjacent resonator elements 21.

The plurality of resonator elements are arranged point-symmetrically with respect to the center of the circuit according to a circular pattern, such that the resonator 31 having the oscillating component 24 of the continuous integrated configuration may oscillate in a higher-order mode, the kinetic energy It is transmitted to the adjacent resonator element 21, and thus it is possible to reduce the overall kinetic energy leaking to the side of the substrate 22. As a result, it is possible to improve the Q-value of the parallel resonator.

Since the length of the oscillating component 24 is adjusted to an integral multiple of the oscillating wavelength, the resonator 31 may oscillate in a higher order mode. The support assembly 23 that provides the oscillating assembly 24 at the oscillating node allows oscillation of the high order mode.

5A and 5B comparatively show the resonance characteristics of the annular parallel resonator 31 of the first embodiment and the array parallel resonator 1 of the comparative example shown in Fig. 26. Fig. 5A shows the resonance characteristic "a" of the parallel resonator 31 of the first embodiment, and Fig. 5B shows the resonance characteristic "b" of the parallel resonator 1 according to the comparative example. Figure 5A shows the resulting features when the number of resonator elements in a parallel configuration in the example is 32. Figure 5B shows the resulting features when the number of resonator elements in a parallel configuration in the example is 30. In a parallel configuration example aimed at reducing the insertion loss observed in the resonant peak, it was found that the parallel configuration of the array resulted in peak splitting, a decrease in the Q-value, and a large difference in the Q-value (see figure 5B). The annular parallel configuration of this embodiment was found to almost completely eliminate the peak split, reduce the Q-value, and substantially reduce the difference in the Q-value (see Figure 5A).

Fig. 6 shows a second embodiment of the resonator of the present invention, a so-called parallel resonator. The resonator 55 of this embodiment is configured to have a support assembly 23 disposed at each node of the oscillation. The configuration, in addition to the support assembly 23, also includes an input electrode 26, an output electrode 27, and an oscillating assembly 24 of the unit resonator element 21, which are identical to the portions of the first embodiment shown in Figures 2 and 4, such that Any parts corresponding to those parts shown in Fig. 4 are given the same reference numerals to avoid repeated explanation.

According to the resonator 55 of the second embodiment, since the support assembly 23 is disposed at all nodes of the oscillation, the resonance mode is limited, and thus the accuracy of the Q-value is improved. The other effects that can be obtained here are the same as those in the first embodiment described above.

7A and 7B show a third embodiment of the resonator of the present invention, a so-called parallel resonator. The resonator 56 of this embodiment is configured by forming only the output electrode 27 as a lower electrode and by arranging the support assembly 23 to hold each of the output electrodes 27 therebetween, or in other words, arranging the support assembly in the oscillating assembly Each node of the oscillation of 24 (corresponding to every other anti-node of the oscillation). In this embodiment, the DC bias voltage V is applied to the oscillating assembly 24 via the support assembly 23 and the input signal is also input. In this example, the support assembly 23 (or the oscillating assembly 24) also functions as an input electrode. In the third embodiment, the unit resonator element 57 is configured by a single output electrode 27 and an oscillating assembly 24 held by the two support assemblies 23, and the plurality of unit resonator elements 57 are in accordance with a circular pattern. Configuration. Other configurations including the oscillating component 24 and the like are the same as those in the first embodiment shown in Figs. 2 and 4. Therefore, any parts corresponding to those parts shown in FIG. 4 are given the same reference numerals to avoid repeated explanation.

With the resonator 56 according to the third embodiment, it is also possible to obtain the same effect as that in the first embodiment described above.

8A and 8B show a fourth embodiment of the resonator of the present invention, a so-called parallel resonator. The resonator 59 of this embodiment is configured by connecting the unit resonator elements 21 in a ring shape to form a polygon. The polygon may be an even-numbered equilateral polygon, such as an equilateral hexagon, an equilateral octagon, and the like. The configuration other than the polygon configuration is the same as the configuration in the first embodiment shown in FIGS. 2 to 4, so any portion corresponding to the portions shown in FIGS. 2 to 4 is Give the same reference numbers to avoid repeated explanations.

With the resonator 59 according to the fourth embodiment, it is also possible to obtain the same effect as that in the first embodiment described above.

The resonator in the above embodiment is configured by arranging the support assembly 23 of the oscillating assembly 24 in the resonator element below the oscillating assembly 24. Figures 9A, 9B, and 9C show other configurations of the resonator, the difference being in the manner in which the oscillating components in the resonator elements are supported.

As shown in FIGS. 9A, 9B, and 9C, the resonator 61 of this embodiment has a resonator element 62 that is affixed to the support of the substrate 22 via the oscillating assembly 24 via the fixed portions 63, 64. The assembly 66, and the input electrode 26 for processing the electrical signal are configured with the output electrode 27 formed on the substrate 22 opposite the oscillating assembly 24 with the micro-spacer 25 disposed therebetween, wherein the support assembly 66 is disposed in the oscillating assembly The outside of the 24th. Reference numeral 41 represents wiring on the input side, and reference numeral 42 represents wiring on the output side. The support assembly 66 is integrated with the oscillating component to be formed outside the oscillating assembly 24. On the outer side of the support assembly 66, the fixed portion 64 is continuously extended from the support assembly and formed integrally therewith, and the fixed portion 63 is disposed below the fixed portion 64. The fixing portion 63 is fixed to the conductive base 81 which is formed on the substrate 22 while the input electrode 26 and the output electrode 27 of the lower electrode are formed on the substrate 22.

Here, the support member 66 and the fixing portion 64 are formed integrally with each other and used as an extending portion extending outward from the oscillating member 24. Therefore, the fixing portions of the support assembly 66 are each composed of three components, which are the base 81 and the fixing portions 63 and 64.

The support assembly 66 is formed at the nodes of the oscillations generated when the oscillating assembly 24 resonates, that is, the portions cause little oscillation. The position, size and rigidity of the support assembly 66 and the fixed portion 64 are set such that the two ends of the oscillating assembly 24 can oscillate like a free end of the oscillation.

In the resonator 61 of the present embodiment, the oscillation energy leaking from the oscillation assembly 24 to the substrate 22 is very small compared to the resonator having the support member 23 disposed below the oscillation assembly 24. The resonator 61 also has the advantage that the oscillating energy is less likely to be transmitted to the support assembly 66 because the support assembly 66 is disposed at the oscillating node, similar to the configuration in the above embodiment.

Next, other embodiments of the resonator of the present invention using the resonator element 62 shown in Figs. 9A and 9B will be explained.

10A, 10B, and 11 show a fifth embodiment of a resonator of the present invention, a so-called parallel resonator. The drawings show a schematic configuration, Figure 10A is a plan view of the resonator, Figure 10B is a plan view of the cell resonator element in the resonator, and Figure 11 is a cross-sectional view of the resonator (along Figure 10A) Line DD is obtained).

The resonator 71 of the fifth embodiment is configured by arranging a plurality of the above resonator elements 62 on the substrate 22 according to a closed pattern in which the oscillating members 24 of the plurality of resonator elements 62 are continuously formed in an integrated manner. form. The substrate 22 is composed of a substrate having an insulating property at least on its surface portion, and the lower electrodes are formed on the surface portion, similar to the above. For example, it is possible to use a semiconductor substrate having an insulating film formed thereon, or an insulating substrate. All of the resonator elements 71 arranged in a parallel configuration are arranged point-symmetrically with respect to the center of the closed system, and are annularly arranged in this embodiment according to the annular configuration. A closed oscillating assembly 24 of continuous assembly is formed according to a circular pattern.

In this embodiment, the support assembly 66 of the oscillating assembly 24 is formed at every other node of the oscillation on the outer side of the inner circumferential side and the outer circumferential side of the oscillating assembly 24, that is, corresponding in the secondary oscillation mode. At the site of the node of each single wavelength. In other words, the support assembly 66 is formed in an integrated manner from both sides of the oscillating assembly 24 as previously described. In this embodiment, four support assemblies 66 are provided relative to the unit resonator elements. The support assembly 66 supports the oscillating assembly 24 and is secured to the conductive pedestal 65 via fixed locations 64, 63 that are formed while the input and output electrodes of the lower electrode are formed on the substrate 22.

As shown in FIG. 12, the support assembly 66 that supports the oscillating assembly 24 is the portion that is in contact with the oscillating assembly 24. The fixed portion 64 is formed from it to the support assembly 66. The extension extending outwardly from the oscillating assembly 24 has a geometry that extends the wide retaining portion 64 to the narrow support assembly 66. The support assembly 66 is formed from the oscillating assembly 24 and is formed integrally therewith, wherein the width d2 is set to be the film thickness d1 of the oscillating member 24 (i.e., the film thickness of the extended portion composed of the support member 66 and the fixed portion 64). ) Equal (d2 = d1) is preferred. In other words, the narrow portion 64A has a square cross-sectional shape. Here, the extension formed by the support member 66 and the fixing portion 64 is formed on the same plane as the oscillation assembly 24. If the support assembly 66 and the fixed portion 64 are formed on the same plane as the oscillating assembly 24, it is possible to minimize mechanical losses at the connection points of the support assembly 66 and the oscillating assembly 24. As a result, it is possible to maintain the Q-value of the oscillating body as a large Q-value. By adjusting to d1 = d2, it has been confirmed that the twisting action of the support member 66 under the oscillation of the oscillation unit 24 becomes smooth, and the Q-value rises steadily. It has also been confirmed that the excessive width d2 of the narrow portion 64A may cause the torsional loss, whereas the excessively small width shakes the action of the narrow portion 64A, and thus a stable Q-value cannot be obtained. It has been confirmed that when the cross-sectional geometry of the narrow portion 64A is square, the maximum point of the Q-value is obtained.

Other configurations are similar to those described above with reference to FIGS. 2 to 4, and thus detailed explanation will be omitted. Any parts corresponding to those parts appearing in FIGS. 2 to 4 are given the same reference numerals, and thus the explanations thereof are omitted.

Since the high-order oscillation mode based on the resonance wave number unit of the resonator element 62 is raised and the oscillation assembly 24 is formed as a closed loop system, the resonator 71 of the fifth embodiment may enhance the uniform oscillation mode. In this closed system, the node-to-node distance and the anti-node-to-node distance of each of the resonator elements 62 are equal. Thus, comparing any of the resonator elements 62 in the closed system, the resonator features are all equal to one another, successfully avoiding structural differences in the resonator elements 62. As a result, it is possible to suppress the difference in the characteristics of the independent resonator elements 62, and thus it is possible to obtain a resonator having a large Q-value and a small insertion loss. Moreover, since the fixed portion 63 of the oscillating assembly 24 is disposed outside the oscillating member 24, it is possible to reduce the possible passage of the oscillating member 24 -> the extended portion 64 - the fixed portion 63 - the substrate 22 toward the substrate 22 The oscillating energy of the side leakage makes it possible to obtain a larger Q-value.

13A and 13B show a sixth embodiment of the resonator of the present invention, a so-called parallel resonator.

The resonator 72 according to this embodiment is configured by connecting the unit resonator elements 62 in a polygonal loop manner. In this embodiment, the oscillating assembly 24 is formed to provide a closed polygon system. As previously described, the polygon may be an even-numbered equilateral polygon, such as an equilateral hexagon, an equilateral octagon, and the like. Other configurations than the polygonal configuration are the same as those in the fifth embodiment shown in FIGS. 10A and 10B, so any portion corresponding to the portions shown in FIGS. 10A and 10B will be given the same Reference numbers to avoid repeated explanations.

The resonator 72 according to the sixth embodiment is formed by connecting the resonator elements 62 to form a closed polygon system, and it is possible to enhance effects similar to those explained in the fifth embodiment. For example, because the resonator elements 62 have similar geometries to each other, it is possible to suppress differences in the features of the individual resonator elements 62 and achieve high Q-values and small insertion losses. Since the fixing portion 63 is disposed on the outer sides of the oscillating member 24, it is possible to reduce the oscillating energy leaking toward the substrate 22, so that a larger Q-value may be obtained.

Although the resonator elements 62 of the fifth and sixth embodiments are configured under equal conditions, the resonator of the closed system may be configured by constituting the unequal resonator elements depending on the manner in which the closed system is fabricated.

14A to 14C show a seventh embodiment of a resonator based on a combination of unequal resonator elements, a so-called parallel resonator, in accordance with the present invention. The resonator 73 according to this embodiment is based on a track-shaped annular pattern composed of a straight line or a curved line (for example, an arc shape), by combining the two types of resonator elements 62A shown in Figs. 14B and 14C, Configured to 62B to form a closed system. The resonator element 62A shown in Fig. 14B is disposed at a curved portion, more specifically, in a curved shape with the oscillation unit 24, and the wiring 42 connected to the output electrodes and the wiring 41 connected to the input electrodes have A shape similar to the shape shown in Fig. 10B. The resonator element 62B shown in Fig. 14C is disposed at a linear portion, and the oscillation unit 24, and the wiring 42 connected to the output electrodes are formed in a straight line with the wiring 41 connected to the input electrodes.

Other embodiments of the configuration, such as configuring the support assembly 66 continuing from both sides of the oscillating assembly, are identical to the embodiment described in the fifth embodiment, and thus correspond to the portions shown in Figures 10A and 10B. The same reference numbers will be given to any part to avoid repeated explanation.

In the resonator 73 according to the seventh embodiment, although the oscillation modes are different, the two kinds of resonator elements 62A, 62B are set to have the same resonance frequency. By virtue of this configuration, the resonator configured here can be boosted to a higher order oscillation mode based on the wavenumber unit of the resonator element, similar to the fifth and sixth embodiments. Forming an oscillating assembly 24 that provides a closed system similar to the closed system described above may enhance a uniform oscillation mode in which any of the resonator elements can oscillate at the same resonant frequency.

While the design factors controlling the characteristics of the two resonator elements 62A, 62B are increased, a significant advantage of this embodiment is that the oscillating assembly 24 can employ the linear resonator element 62B as a resonator element. Because the inner and outer structures of the closed system become identical in the linear oscillating assembly 24, stress deformation calculations and fabrication may be more readily available than stress deformation calculations and fabrication of the curved (arc) oscillating assembly 24. As a result, it is possible to obtain the desired frequency characteristics more easily.

Therefore, at least the resonator 73 of the seventh embodiment is configured to include a larger ratio of the linear portion to the curved portion, and a linear portion including as long as possible.

In this embodiment, it is also possible to obtain a large Q-value and a small insertion loss similar to those previously described. The oscillating energy leaking toward the substrate 22 may also be reduced, so that a larger Q-value may be obtained.

15 to 17 show an exemplary method to be supported by the resonator according to the fifth to seventh embodiments described above, and more specifically, an exemplary configuration position of the support assembly. Any part corresponding to the parts in the fifth to seventh embodiments will be given the same reference numerals.

In the supporting method shown in Fig. 15, the fixing portion 63 is disposed on both outer sides of the oscillating member 24 corresponding to all the nodes of the oscillation. In other words, the resonator forms an extended portion 64 on both sides of the oscillating member at a position of all the nodes corresponding to the oscillation by continuation and integration with the oscillating member 24, and by arranging the fixed portion 63 at the extended portion 64. The lower part is configured to support all the nodes of the oscillating component 24 from both sides of the oscillating component. The oscillating assembly 24 oscillates in a main drive mode, wherein the support is set for each single wavelength. In other words, the oscillating assembly 24 oscillates in a secondary drive mode, wherein the support is set for each half wavelength. In summary, the resonator is configured such that in its unit resonator element, the oscillating assembly 24 is supported by six support assemblies.

The mode example shown in Figure 15 may increase the Q-value of the resonator, may limit the resonant mode, and may increase the accuracy of the Q-value, having a connection to the oscillating component 24 at a location corresponding to all nodes. Two side support assemblies 66.

The support method shown in Figure 16 is such that the support assembly 66 is disposed on the outer side of the oscillating assembly 24 at a location corresponding to each node of each single wavelength of oscillation. In other words, the support assembly 66 is formed on both sides of the oscillating assembly 24 at the position of each node of the single wavelength corresponding to the oscillation by integrating with and continuing from the oscillating component, and by arranging the fixed portion 63 in the slave The resonator is configured by the support assembly 66 continuing below the fixed portion 64. In summary, the resonator is configured such that in its unit resonator element, the oscillating assembly 24 is supported by four support assemblies 66. This configuration allows the oscillating component 24 to oscillate in the secondary drive mode and may be applicable to resonators that use secondary mode resonant frequencies.

The modular example shown in FIG. 16 may provide a resonator having a large Q-value having a support assembly 66 connected from both sides of the oscillating assembly 24 at a position corresponding to every other node of the oscillation.

Although not shown in the figures, in a resonator using a cubic mode resonant frequency, the two nodes of the oscillation may appear between the two ends of the support assembly 66 in the unit resonant element.

The method of supporting the resonator shown in Figure 17, such as using a secondary mode resonant frequency. In this supporting method, the support members 66 are alternately disposed on the inner circumferential side and the outer circumferential side of the oscillation assembly 24, in other words, the single support assembly 66 is configured for the oscillation node. That is, the resonator is formed by sequentially staggering the support assembly 66 on the inner circumferential side and the outer circumferential side of the oscillating member 24 by corresponding oscillation nodes, and by arranging the fixing portion 63 in the continuation from the support assembly 66 Configured below the part 64. The resonator is configured such that in its unit resonator element, the oscillating assembly 24 is supported by three fixed assemblies 63.

When the example in FIG. 17 is configured to alternately connect the support assembly 66 to the inner circumferential side and the outer circumferential side of the oscillating member 24 with respect to the oscillating node, it is possible to obtain a high Q-value and possibly be more stable. The Q-value is improved because the resonance state is improved compared to a resonator whose node does not have a support member.

In the resonator supporting the above-described closed system oscillation assembly 24 from the outside thereof, when observed on the basis of the unit resonator, the difference in the Q-value in the so-called six-point support configuration shown in FIG. 15 may be smaller than that shown in FIG. The difference in the so-called four-point support configuration in which the oscillating component 24 is supported at all nodes by a fixed location 63, in which the oscillating component 24 is attached Supported by the support assembly 66 at every other node. Figure 22 is a graph showing the difference in Q-values in the four-point support configuration. Figure 23 is a graph showing the difference in Q-values in the six-point support configuration. The abscissa of the figure represents the Q-value and the ordinate represents the frequency.

From the graphs shown in Figs. 22 and 23, it has been found that the four-point support configuration provides a standard deviation σ of the normal distribution curve I of σ = ± 10.6%, which is used as a difference index in the Q-value, however, The six-point support configuration has been found to provide a standard deviation σ of the normal distribution curve II of σ = ± 3.5%. Therefore, it has been confirmed that the six-point support configuration may more effectively reduce the difference in the Q-value compared to the four-point support configuration. The Q-value determines the basic parameters of the product quality, where a small difference in the Q-value means a small difference in the product.

18 through 20 show an exemplary support mechanism for the oscillating assembly 24.

The support mechanism shown in FIG. 18 represents an example in which the support assembly 23 is disposed below the oscillating assembly 24. The support mechanism 76 of this embodiment is formed by the conductive substrate 81 formed on the substrate 22 while the input electrode 26 and the output electrode 27 are formed on the substrate 22. The input electrodes and the lower electrodes of the output electrodes are A support region 24a corresponding to the oscillation node of the oscillation assembly 24, and a support assembly 23 fixed to the base 81 and supporting the support region 24a on the side of the oscillation assembly 24 are composed. Reference numeral 25 represents an interval formed between the lower electrode and the oscillating member 24. The susceptor 81 is formed using the same material as the lower electrode and has the same thickness as the film thickness of the lower electrode. In this process, precise processing may be performed by forming the susceptor 81, the input electrode 26 and the output electrode 27 as the lower electrodes, and the wirings 41, 42 connected thereto in the same process step (see FIGS. 10A and 10B, 13A and 13B, and Figs. 14A through 14C) are performed by forming the oscillating assembly 24 and the support assembly 23 in the same process step.

The support mechanism shown in FIG. 19 represents an example in which the support assembly 66 is disposed outside the oscillating assembly 24. The support mechanism 77 of this embodiment is formed on the substrate 22 by forming the input electrode 26 and the output electrode 27 on the substrate 22, and the input electrodes and the lower electrodes of the output electrodes are The self-oscillating assembly continues and is integrally formed with a support assembly 66 formed on the outer side of the oscillating assembly 24, a fixed portion 64 extending from the support assembly 66, and a fixed portion 63 fixed to the base 81 and supporting the fixed portion 64. The number 25 then represents the interval. The susceptor 81 is formed using the same material as the lower electrode and has the same thickness as the film thickness of the lower electrode. The support assembly 66 is formed integrally with it as an extension of the oscillating assembly 24 and is formed at a position corresponding to the oscillating node of the oscillating assembly 24. The support assemblies 66 are each formed to have a narrow portion on the side in contact with the oscillating member 24, and the wide portion is similar to the wide portion described above. In the process, precise processing may be formed by forming the pedestal 81 in the same process step as forming the input electrode 26 and the output electrode 27 as the lower electrode, and connecting to the electrodes (for example, corresponding to the figure) The wiring layers 41, 42) of 2 are secured by forming the support member 66, the fixing portion 64, and the fixing portion 63 in the same step.

The first difference between the support mechanism 77 and the support mechanism 76 exists in the configuration of the support assembly. In the support mechanism 77, the fixed portion 63 is formed outside the closed system (annular, polygonal, rail-like) of the oscillating assembly 24. The second difference exists in the action of the support assembly. The support assembly 23 of the support mechanism 76 exhibits a bending action. The fixed portion 63 of the support mechanism 77 shows a twisting action.

The support mechanism shown in FIG. 20 represents an example in which the stiffness ratios of the oscillating assembly 24 and the support assembly 86 are different. The support mechanism 78 of this embodiment is a support member 86 made of a material different from the oscillating member 24, a fixed portion 87 that is integrated with the support member and extends therefrom, a fixed portion 63 below the fixed portion 87, and The base 81 is configured. In this example, the support assembly 86 partially overlaps the oscillating assembly 24 to form an integral body with the oscillating assembly 24. In particular, by making the material of the support assembly 86 constituting the extension portion different from the material of the oscillating member 24, it is possible to greatly control the support strength.

As shown in FIG. 21, the toroidal resonator described above results in a different internal and external geometry of the resonator element 22. Due to the difference in curvature between the inner circumference and the outer circumference, it is assumed that the width of the region of the oscillation node may vary. More specifically, it is assumed that the width of the region of the node is narrower on the inner circumferential side of the closed system than the outer circumferential side. In this configuration, the support assembly 66 between the inner and outer sides provides a different configuration, as shown in Figure 21B and Table 1.

The individual narrow portions 64A shown in Table 1 may have some or all of different lengths L, widths W, thicknesses d, and hardness between the inside and the outside of the enclosed oscillating assembly 24 as shown in Table 1. By making the physical quantities of the extending portions 64A between the inner side and the outer side of the oscillating member 24 different, the spring effects on the oscillating members of the supporting members applied on the inner and outer circumferential sides become equal, and thus it is possible to advantageously make the ring The resonance of the oscillating body between the inside of the circle and the side of the outer circumference is uniform. With the effect of this effect, it is possible to maintain a high Q-value.

In the resonators 31, 55, 56, 59, 71 to 73 of the above-described first to seventh embodiments, as shown in Figs. 24A and 24B, the input electrode 26 and the output electrode 27 on the substrate 22 correspond to oscillation. The anti-node position of the oscillation 101 of the assembly 24 is formed, while maintaining the spacing 25 therebetween is preferred. By placing the input electrode 26 and the output electrode 27 at the opposite node of the oscillation 101, it is possible to improve the conversion efficiency of the signals from the electrodes, possibly increasing the amplitude, and thus possibly the high Q-value.

While the first to seventh embodiments described above have been shown to have a configuration for providing the input electrode 26 and the output electrode 27 below the oscillating assembly 24, other permissible configurations may be, such as having above or on the side of the oscillating assembly 24. The side of the configuration provides the configuration of the input electrode 26 and the output electrode 27. These embodiments will be explained below.

25A to 25C show an eighth embodiment of a resonator, a so-called parallel resonator, according to the present invention. The resonator 74 according to this embodiment is configured by forming the input electrode 26 and the output electrode 27 over the oscillating component 24. As shown in FIG. 25C, an input electrode 26 and an output electrode 27 supported by a conductive row 75 are formed. Rows 75 are formed such that they are in contact with the inner and outer circumferential loop wires 41 and 42 formed on the substrate 22. Other embodiments of the configuration are similar to those of the first embodiment, so any constituents corresponding to those shown in Figures 3 and 4 will be given the same reference numerals to avoid Repeat the explanation. Similarly in this resonator 74, the oscillating component 24 oscillates at its particular resonant frequency by the signal input from the input electrode 26 provided above the oscillating component 24, and the signals are transmitted to the output electrode 27 via the interval 25.

According to the resonator 74 of the eighth embodiment, it is possible to obtain a Q-value improving effect similar to that described above. It is also possible to provide similar effects by arranging the electrodes 26 and 27 on the oscillating member 24 in the resonator structure shown in the first to seventh embodiments.

Although the electrodes 26 and 27 above the oscillating member 24 shown in FIG. 25A are formed by extending the inner peripheral side and the outer circumferential side between the oscillating members 24, the electrodes 26 and 27 may only be from the inner circumference. Either the side and the outer circumferential side are extended and alternately provided.

26A to 26C show a ninth embodiment of a resonator according to the present invention, a so-called parallel resonator. The resonator 75 of this embodiment is configured by providing an input electrode 26 and an output electrode 27 on the side of the oscillating component 24. In this embodiment, the input electrode 26 is formed oppositely with the oscillating member 24 interposed therebetween, and is opposite to the sides of both the inner circumferential side and the outer circumferential side of the oscillating assembly 24. In this embodiment, the output electrode 27 adjacent to the input electrode 26 is disposed oppositely with the oscillating member 24 interposed therebetween, and is opposite to the sides of both the inner circumferential side and the outer circumferential side of the oscillating assembly 24. As shown in the figure, the input electrode 26 and the output electrode 27 are arranged to be displaced upward from the oscillating unit 24, because if they are disposed on the positive side of the oscillating unit 24, the oscillating unit 24 will not be oscillated. Alternatively, as shown by the chain line, the input electrode 26 and the output electrode 27 are disposed to be displaced downward from the oscillation unit 24.

Although not depicted in the figure, the input electrode 26 and the output electrode 27 are respectively supported by the annular wirings 41 and 42 formed on the substrate 22 concentric with the oscillation unit 24 via a conductive row 75 similar to that shown in FIG. 25C. Other embodiments of the configuration are similar to those of the first embodiment, so any reference to the parts shown in Figures 3 and 4 will be given the same reference numerals to avoid repeated explanation.

Similarly in this resonator 75, the oscillating component 24 boosts the oscillation at its particular resonant frequency by the signal input from the input electrode 26 provided above the oscillating component 24, and the signals are transmitted to the output electrode 27 via the interval 25. . More specifically, as shown in FIG. 27, when a signal is input to the input electrode 26 to generate a potential difference between the input electrode 26 and the oscillation element 24, for example, based on the assumption that the potential of the oscillation element is positive and the potential of the input electrode 26 is negative, a force F ₁ from the oscillating assembly 24 applied to the fixed input electrode 26, and thus the oscillating assembly is moving upwardly. Conversely, when the input electrode 26 has a positive potential and the oscillating component 24 has a negative potential, the effect of the force is in the opposite direction, and thus the oscillating assembly 24 moves downward. In this manner, the oscillating component 24 oscillates in the vertical direction by the input signal.

According to the resonator 75 of the ninth embodiment, it is possible to obtain a Q-value improving effect similar to that described above. With respect to the resonator structure shown in the first to seventh embodiments, it is also possible to provide similar effects by arranging the electrodes 26 and 27 with respect to the side of the oscillating member 24 and interposing the oscillating member 24 therebetween.

28A to 28C show a tenth embodiment of a resonator, a so-called parallel resonator, according to the present invention. The resonator 76 of this embodiment is provided with the input electrode 26 and the output electrode 27 only with respect to one side of the oscillating component 24. Although the example shown in the figure is configured to provide the input electrode 26 and the output electrode 27 with respect to the side of the outer circumferential side of the oscillating member 24, they may be disposed on the side of the inner circumferential side of the oscillating member, as The chain line is shown. Similar to that shown in FIG. 26, the input electrode 26 and the output electrode 27 are disposed to be displaced upward from the oscillating assembly 24, rather than being disposed on the positive side of the oscillating assembly 24. Although not depicted in this figure, the input electrode 26 and the output electrode 27 may be disposed to be displaced downward from the oscillating assembly 24. Although not depicted in the figure, the input electrode 26 and the output electrode 27 are respectively supported by ring-shaped wirings 41 and 42 formed on the substrate 22 concentric with the oscillating unit 24 via a conductive row 75 similar to that shown in FIG. 25C. Other embodiments of the configuration are similar to those of the ninth embodiment, so any portion corresponding to those portions of Figs. 26A to 26C will be given the same reference numerals to avoid repeated explanation.

According to the resonator 76 of the tenth embodiment, it is possible to obtain a Q-value improving effect similar to that described above. With respect to the resonator structure shown in the first to seventh embodiments, it is also possible to provide similar effects by providing the electrodes 26 and 27 only with respect to one side of the oscillation unit 24.

29A to 29C show an eleventh embodiment of a resonator, a so-called parallel resonator, according to the present invention. The resonator 77 of this embodiment is provided with the input electrode 26 and the output electrode 27 by shifting from the oblique direction of the individual sides of the oscillating component 24 and interposing the oscillating component 24 therebetween. In this example, the input electrode 26 and the output electrode 27 are disposed by sandwiching the oscillation unit 24 in a tilted displacement manner. In other words, in this embodiment, the output electrode 27 is disposed on the outer circumferential side of the oscillation assembly by being displaced upward from the oscillation assembly 24, and the input electrode 26 is disposed to be displaced from the oscillation assembly 24 to be disposed in the oscillation assembly. On the inner circumference side. Other embodiments of the configuration are similar to those of the eighth and ninth embodiments, so any portion corresponding to the portions of Figs. 25A to 25C and Figs. 26A to 26C will be given the same reference numerals. To avoid repeated explanations.

The oscillating assembly 24 in the resonator 77 of the eleventh embodiment oscillates in a manner similar to that explained with reference to FIG.

According to the resonator 77 of the eleventh embodiment, it is possible to obtain a Q-value improving effect similar to that described above. With respect to the resonators shown in the first to seventh embodiments, it is also possible to ground the electrodes by opposing the two side faces of the oscillating member 24 and interposing the oscillating member 24 therebetween (in other words, shifting in the oblique direction). 26 and 27 are disposed on the inner circumferential side and the outer circumferential side thereof to obtain a similar effect.

The method of supporting the oscillating assembly 24 shown in Figs. 15 to 17 is also applicable to the eighth to eleventh embodiments.

Next, an exemplary method of manufacturing the resonators according to the first to fourth embodiments will be explained with reference to FIG.

First, as shown in FIG. 30A, a yttrium oxide (SiO ₂ ) film 82 and a tantalum nitride (SiN) film 83 are formed on the surface of the tantalum semiconductor substrate 81, for example, by low pressure CVD, to form an insulating film 84. . The substrate 22 is configured by a semiconductor substrate 81 and an insulating film 84. The two-layer configuration of the insulating film 84 increases the thickness of the dielectric film and successfully reduces the parasitic capacitance between the germanium substrate 81 and the electrodes on the substrate side. When the sacrificial layer is selectively removed, this step will be described below, and the tantalum nitride film 83 is used as an etch stopper.

Next, as shown in FIG. 30B, a phosphorus-containing (P) polycrystalline germanium film is formed, for example, on the insulating film 84, and the polycrystalline germanium film is patterned by lithography and etching techniques, thereby forming an input electrode of the microresonator. 26. The output electrode 27 and the conductive base 28a support the row.

Next, as shown in FIG. 30C, a sacrificial layer 85 such as a yttrium oxide (SiO ₂ ) layer is formed on the surface including the input electrode 26, the output electrode 27, and the susceptor 28 by low pressure CVD, and then the sacrificial layer 85 is borrowed. The planarization process such as CMP (Chemical Mechanical Polishing) is planarized. In this way, the sacrificial layer 85 is formed on the surfaces of the input/output electrodes 26, 27 and the susceptor 28 with a desired thickness. Thereafter, a contact hole 86 (so-called anchor portion) deep to the susceptor 28 is formed in a row in the sacrificial layer 85 by using a lithography technique and an etching technique.

Next, as shown in FIG. 30D, a polysilicon doped with impurities and thus provided with conductivity is formed on the sacrificial layer 85 including the contact holes 86, for example, by low pressure CVD. Second, the polysilicon film is patterned using lithography and etching techniques, thus forming the oscillating component 24 and row 23.

Next, as shown in Fig. 30E, only the yttrium oxide film containing the sacrificial layer 85 is selectively removed using an etching solvent such as a DHF solvent, thereby forming a space between the oscillating member 24 and the input/output electrodes 26, 27. By the manufacturing process steps thus obtained, it is possible to manufacture the resonators according to the first to fourth embodiments.

By changing the lithographic pattern shown in FIG. 30 to change the position of the pedestal 28 and the row 23 and the geometry of the oscillating component 24, the resonators according to the fifth to seventh embodiments may be used with the first to the A semiconductor process fabrication similar to the four embodiments.

Next, an exemplary method of manufacturing the resonator 74 according to the eighth embodiment will be explained with reference to FIG. The manufacturing procedure to FIG. 31A is similar to the manufacturing procedure shown in FIGS. 30A to 30D applied to the above-described first to seventh embodiments.

More specifically, on the surface of the semiconductor substrate 81, the insulating film 84 is typically formed by forming a yttrium oxide (SiO ₂ ) film 82 and a tantalum nitride (SiN) film 83. The phosphorus-containing (P) polycrystalline germanium film is formed, for example, on the insulating film 84 and patterned, thereby forming a susceptor 28 supporting the row of the oscillating components, and ring-shaped wirings 41 and 42 connected to the independent input electrodes and the independent output electrodes ( Here, the pattern geometry of the polycrystalline germanium film is different from that shown in Fig. 30B). A sacrificial layer 85 is then formed, and contact holes 86 deep to the susceptor 28 are formed in columns in the sacrificial layer 85. Thereafter, a conductive polysilicon is formed over the sacrificial layer 85 and the polysilicon film is patterned, thereby forming an oscillating assembly 24 and a row 23 for securing the oscillating assembly 24 to the susceptor 28.

Next, as shown in FIG. 31B, a sacrificial layer 88, such as a hafnium oxide (SiO ₂ ) film, over the entire surface including the oscillation element 24 and the sacrificial layer 85 is formed by low pressure CVD. The sacrificial layer 88 is formed on the oscillating assembly 24 at a desired thickness. Thereafter, using a lithography technique and an etching technique, contact holes (not shown) of the deep wirings 41 and 42 are formed, which are used to form the input electrodes and the outputs in the sacrificial layers 85 and 88, respectively. The line of electrodes (the so-called holder part). A conductive polysilicon film overlying the sacrificial layer 88 comprising the contact holes is then typically formed by low pressure CVD and lithographic techniques and etching techniques are used to form the rows continuing to the traces 41, 42 (not shown) And the input electrode 26 and the output electrode 27 continuing from the top of the rows.

Next, as shown in Fig. 31C, only the sacrificial layers 85, 88 are selectively removed using an etching solvent such as a DHF solvent, thus forming a space 25 between the oscillating member 24 and the input/output electrodes 26, 27. In this process, the space 89 is also formed between the substrate 22 and the oscillating assembly 24. In this way, the resonator 74 of the eighth embodiment is fabricated.

Next, an exemplary method of manufacturing the resonator according to the eleventh embodiment will be explained with reference to Figs. 32A to 33I. 32A to 33I correspond to the cross-sectional views shown in Fig. 29C.

First, the manufacturing procedure up to Fig. 32A is similar to the procedure for forming the sacrificial layer 85 employed in the fabrication of the above first to seventh embodiments shown in Figs. 30A to 30C. More specifically, the insulating film 84 is typically formed on the surface of the semiconductor substrate 81 by forming a yttrium oxide (SiO ₂ ) film 82 and a tantalum nitride (SiN) film 83. The phosphorus-containing (P) polycrystalline germanium film is formed, for example, on the insulating film 84, and then patterned, thereby forming a susceptor 28 supporting the row of the oscillating components, and a ring for connecting the input electrodes and the output electrodes, respectively. Wirings 41 and 42 (where the geometric geometry of the pattern obtained by patterning the polysilicon film is different from that shown in Figure 30B). Next, a sacrificial layer 85 is formed, and a contact hole (not shown) deep in the wiring 41 of the input electrode for forming a row in the sacrificial layer 85 is formed.

Next, as shown in Fig. 32B, a polysilicon film doped with impurities and thus provided with conductivity is typically formed on the sacrificial layer 85 by low pressure CVD. Since the polysilicon is patterned using a lithography technique and an etching technique, a lower portion 26a of the input electrode 26 and a row connected to the lower portion 26a of the input electrode and the wiring 41 are formed.

Next, as shown in Fig. 32C, a thin film of yttrium oxide (SiO ₂ ), a sacrificial layer 91 is formed over the entire surface including the lower portion 26a of the input electrode by low pressure CVD, and then planarized by, for example, CMP. The process is to flatten the position of the upper surface of the lower portion 26a of the input electrodes. That is, the sacrificial layer 91 is formed to be embedded in the lower portion 26a of the input electrodes. The sacrificial layers 91 and 85 are then selectively etched away, thereby forming a contact hole deep into the pedestal 28 (not shown) for the formation of the rows of the oscillating components.

Next, as shown in Fig. 32D, a polysilicon film doped with impurities and thus provided with conductivity is typically formed on the sacrificial layer 91 by low pressure CVD, which includes the plane of the lower portion 26a of the input electrodes. The polysilicon is patterned using lithography and etching techniques, so that the upper portion 26b of the input electrodes, the lower portion 24a of the oscillating assembly, and the row 23 of the oscillating assembly are formed on the lower portion 26a of the input electrodes (not shown). Show). The input electrode 26 is configured by the lower portion 26a of the input electrodes and the upper portion 26b of the input electrodes.

Next, as shown in Fig. 32E, a thin film of yttrium oxide (SiO ₂ ), a sacrificial layer 92 is formed over the entire surface including the input electrode 26 and the lower portion 24a of the oscillation element by low pressure CVD, and then by, for example, The CMP planarization process is planarized to expose the upper surface of the input electrodes 24 and the lower portion 24a of the oscillating assembly. Thereafter, the sacrificial layers 92, 91, and 85 are selectively etched away, thereby forming a contact hole for the formation of the rows of the output electrodes deep to the wiring 42 (not shown).

Next, as shown in FIG. 33F, similar to the process shown in FIG. 32D, the polysilicon film doped with impurities and thus providing conductivity forms the upper portion 24b of the oscillating component 24, the lower portion 27a of the output electrode 27, and the outputs. Row of electrodes (not shown). The oscillating assembly 24 is configured by the lower portion 24a of the oscillating assembly and the upper portion 24b of the oscillating assembly.

Next, as shown in Fig. 33G, a sacrificial layer 93 is formed to be embedded in the oscillation portion 24 and the lower portion 27a of the output electrodes to expose the upper surface thereof, similar to the process shown in Fig. 32E.

Next, as shown in Fig. 33H, the upper portion 27b of the output electrodes is formed using a polysilicon film doped with impurities and thus providing conductivity, similar to the process shown in Fig. 33F. The output electrode 27 is configured by the lower portion 27a of the output electrodes and the upper portion 27b of the output electrodes.

Next, as shown in FIG. 33I, an etching solvent such as a DHF solvent is used to selectively remove only yttrium oxide in the sacrificial layers 93, 92, 91, and 85, thus at the oscillating component 24 and the input/output electrodes 26, 27 The interval 25 is formed. The resonator 77 of the eleventh embodiment is manufactured in this manner.

The resonator 75 of the ninth embodiment and the resonator 76 of the tenth embodiment are also possible to be manufactured by substantially following the method of manufacturing the resonator 77 of the eleventh embodiment described above.

A plurality of resonator elements are arranged in a ring-like arrangement to form a closed system, and the oscillating assembly is configured by continuous integration to allow it to oscillate as a whole in a higher-order mode, according to the resonance of the above independent embodiment The equalization of the structures of the individual resonator elements and equalization of the stress applied to the oscillating components of the individual resonator elements. By virtue of this configuration, it is possible to reduce the difference in the characteristics of the individual cell resonator elements in the parallel resonator, possibly suppressing the Q-value reduction attributable to the parallel configuration, and possibly getting the equivalent The expected Q-value of the unit resonator. It is even possible to obtain a Q-value greater than that expected from the unit resonator because the kinetic energy of the oscillating assembly leaking to the substrate via the support assembly is reduced.

According to an embodiment of the present invention, it is possible to manufacture a parallel resonator having a large Q-value, and it is possible to configure a highly functional RF element such as an oscillator, a filter, a mixer, and the like using the parallel resonator. It is also possible to use these RF components to configure devices and communication devices.

In particular, it is preferred that the parallel resonator of this embodiment be applied to an oscillator. The oscillator of this embodiment may be configured with an oscillator that is excellent in frequency stability.

Embodiments of the present invention may provide a communication device using electromagnetic wave communication configured by using the oscillator based on the resonator according to the above embodiment, such as a mobile phone, a wireless LAN device, a wireless transceiver, a television tuner, and Radio tuner.

Next, an exemplary configuration of the communication device to which the oscillator is applied in the above-described embodiment of the present invention will be explained with reference to FIG.

First, the configuration of the transmitter system will be explained. The I-channel transmit signal and the Q-channel transmit signal are supplied from the baseband block 230 to the multiplexers 201I and 201Q, respectively. The two signals from the oscillating output of the oscillator 221 are multiplied by the multipliers 201I and 201Q after being subjected to a predetermined phase shift by the phase shifter 202, and then the multiplied signals are mixed to generate a single signal sequence. The mixed signal is then supplied to the multiplier 205 by the variable amplifier 203 and the band pass filter 204, wherein the output of the oscillator 222 is multiplied, and then the frequency to be adjusted is converted to a frequency for transmission. The output of the multiplier 205 is supplied to the antenna 210 connected to the duplex transceiver 209 by a band pass filter 206, a variable amplifier 207, and a power amplifier 208, and wirelessly transmitted from the antenna 210. The band pass filters 204 and 206 remove frequency components different from the frequency of the transmitted signal. The duplex transceiver 209 supplies a signal having a frequency for transmitting from the transmitting system to the antenna side, and supplies a signal having a frequency for receiving from the antenna side to a frequency divider of the receiving system.

In the receiving system, the signal received by the antenna 210 is supplied to the low noise amplifier 211 by the duplex transceiver 209, and the amplified output of the low noise amplifier 211 is supplied to the multiplier 213. The output of the oscillator 222 is multiplied in the multiplier 213, and the signal having the frequency for reception is converted into a signal having an intermediate frequency. The thus converted intermediate frequency signal is then supplied to the double multipliers 215I and 215Q by the band pass filter 214. The two signals from the oscillating output of the oscillator 221 are multiplied by the multipliers 215I and 215Q after being shifted by the phase shifter 216 by a predetermined phase, thereby obtaining an I-channel reception signal and a Q-channel reception signal. The I-channel reception signal and the Q-channel reception signal thus obtained are supplied to the baseband block 230. The band pass filters 212 and 214 remove frequency components different from the frequencies of the signals.

The oscillators 221 and 222 are configured such that the oscillation frequency is controlled by the control unit 223 provided as a PLL (Phase Locked Loop) circuit. The control unit 223 has a filter, a comparator, and the like which are necessary as in the PLL circuit.

In the communication device thus configured as shown in Fig. 34, it is possible to apply the oscillators configured as those of the above embodiments as the oscillators 221 and 222.

According to the communication device of the present invention, an oscillator having a large Q-value parallel resonator is provided, which is excellent in frequency stability, and thus it is possible to provide a highly reliable communication device.

34 illustrates an example of applying the oscillator of the present invention in a communication device participating in wireless transmission and wireless reception, but the present invention may be applicable to an oscillator in a communication device participating in transmission and reception via a wired transmission path, and the like The resonator of an embodiment may additionally be applicable to an oscillator owned by a communication device that only participates in the transmission or only participates in the communication device. The present invention can also be applied to an oscillator in other equipment that requires high frequency signals.

It will be appreciated by those skilled in the art that various modifications, combinations, sub-combinations and variations may occur in the scope of the appended claims or equivalents thereof, depending on the design requirements and other factors.

The present document contains the subject matter related to Japanese Patent Application No. 2007-255864 filed on Sep. 28, 2007, the entire entire entire entire entire entire entire entire entire entire

1, 31, 55, 56, 59, 61, 71, 72, 73, 74. . . Resonator

2, 21, 57, 62, 62A, 62B. . . Resonator element

3, 22. . . Substrate

4, 26. . . Input electrode

5, 27. . . Output electrode

6, 25, 89. . . interval

7, 24. . . Oscillating component

8, 8A, 8B, 23, 66, 86. . . Support assembly

9. . . Interconnect layer

24a. . . Support area

24a, 26a, 27a. . . Lower part

24b, 26b, 27b. . . Upper part

28, 28a, 65, 81. . . Conductive base

41, 42. . . wiring

63, 64, 87. . . Fixed part

64A. . . Narrow part

75. . . Conductive line

76, 77, 78. . . Support mechanism

82. . . Cerium oxide film

83. . . Tantalum nitride film

84. . . Insulating film

85, 88, 91, 92, 93. . . Sacrificial layer

86. . . Contact hole

101. . . oscillation

201I, 201Q, 205, 213, 215I, 215Q. . . Multiplier

202, 216. . . Phase shifter

203, 207. . . Variable amplifier

204, 206, 212, 214. . . Belt pass filter

208. . . Power amplifier

209. . . Duplex transceiver

210. . . antenna

211. . . Low noise amplifier

221, 222. . . Oscillator

223. . . control unit

230. . . Baseband block

a, b. . . Resonance characteristic

F ₁ . . . force

T1. . . Input

T2. . . Output

1A and 1B are a plan view of an exemplary unit resonator element employed in a resonator of an embodiment of the present invention and a cross-sectional view taken along line AA, respectively; and FIG. 2 is a schematic plan view showing a first embodiment of the resonator of the present invention. Figure 3 is an enlarged view of the main portion of the resonator shown in Figure 2; Figure 4 is a cross-sectional view of the resonator of the first embodiment taken along line BB of Figure 3; Figures 5A and 5B are compared FIG. 6 is a schematic plan view showing a second embodiment of the resonator of the present invention; FIG. 7A and FIG. 7B are respectively shown, respectively, showing the resonance characteristics of the annular parallel resonator and the array parallel resonator according to this embodiment; A schematic plan view of a third embodiment of the resonator, and a cross-sectional view of the unit resonator element thereof; and Figs. 8A and 8B are respectively a schematic plan view of a main portion of a fourth embodiment of the resonator of the present invention, and showing unit resonance thereof. FIG. 9A, 9B, and 9C are plan views showing other examples of the unit resonator elements employed in the resonator of the resonator embodiment of the present invention, taken along line CC thereof. section Figure, and its enlarged view; 10A and 10B are respectively a schematic plan view showing a fifth embodiment of the resonator of the present invention, and an enlarged view of a main portion thereof; and Fig. 11 is a cross-sectional view of the resonator of the fifth embodiment (along the line in Fig. 10B) DD is obtained; FIG. 12 is a perspective view showing an extended portion for supporting from the oscillating member in accordance with the present invention; and FIGS. 13A and 13B are respectively a view showing a sixth embodiment of the resonator of the present invention. FIG. 14A, FIG. 14B and FIG. 14C are respectively a schematic plan view showing a seventh embodiment of the resonator of the present invention, and an enlarged view of a main portion thereof; FIG. 15 is a view showing an enlarged view of the main portion according to the present invention; An exemplary configuration diagram of a method of supporting the oscillating component used in the resonator; FIG. 16 is a view showing another exemplary configuration of the method for supporting the oscillating component employed by the resonator according to the present invention; Other exemplary configuration diagrams of the method for supporting the oscillating assembly used in the resonator according to the present invention; FIG. 18 is a model configuration diagram showing a supporting mechanism of the oscillating assembly according to the present invention; and FIG. 19 is a view showing a configuration according to the present invention. Other exemplary configuration diagrams of the support mechanism of the oscillating assembly; Fig. 20 is a view showing other exemplary configuration of the support mechanism of the oscillating assembly according to the present invention; Figs. 21A and 21B are respectively for explaining the formation of an oscillating member having a bend. Plan and perspective view of the main part; Figure 22 is a Q-value diagram for explaining the four-point support configuration of the present invention; Figure 23 is a Q-value diagram for explaining the six-point support configuration of the present invention; Figures 24A and 24B are respectively implemented according to the present invention A schematic plan view of a main portion of the example and a cross-sectional view taken along line AA thereof; FIGS. 25A, 25B, and 25C are plan views of the main portion of the eighth embodiment of the resonator of the present invention, along a line AA thereof The obtained cross-sectional view and the cross-sectional view taken along the line BB thereof; FIGS. 26A, 26B, and 26C are respectively a plan view of the main portion of the ninth embodiment of the resonator of the present invention, taken along the line AA thereof. A cross-sectional view, and a cross-sectional view taken along line BB thereof; FIG. 27 is a view explaining the operation of the ninth embodiment; and FIGS. 28A, 28B, and 28C are main views showing a tenth embodiment of the resonator of the present invention, respectively. a plan view of a portion, a cross-sectional view taken along line AA thereof, and a cross-sectional view taken along line BB therein; FIGS. 29A, 29B, and 29C show the main body of the eleventh embodiment of the resonator of the present invention, respectively. a plan view of the part, a section taken along the line AA thereof, and A cross-sectional view taken along line BB thereof; FIGS. 30A to 30E are views showing exemplary manufacturing steps for manufacturing the resonators according to the first to fourth embodiments; FIGS. 31A to 31C are diagrams for manufacturing according to the eighth FIG. 32A to FIG. 32E are diagrams showing the manufacturing steps of the exemplary method of manufacturing the resonator according to the eleventh embodiment (series 1); FIGS. 33A to 33D are diagrams showing the manufacturing according to the first embodiment; Figure (Processing 2) of the process steps of the exemplary method of the resonator of the eleventh embodiment;

Figure 34 is a circuit diagram showing an embodiment of a communication device in accordance with the present invention;

35A and 35B are a schematic plan view and a cross-sectional view, respectively, of an exemplary array parallel resonator;

Figure 36 is a cross-sectional view showing the exemplary unit resonator element of the parallel resonator shown in Figure 35.

twenty one. . . Resonator element

twenty three. . . Support assembly

twenty four. . . Oscillating component

26. . . Input electrode

27. . . Output electrode

31. . . Resonator

41, 42. . . wiring

T1. . . Input

T2. . . Output

V. . . DC bias voltage

Claims (18)

A resonator comprising a plurality of resonator elements, each of the resonator elements having an electrode and an oscillating component opposite the electrode and having a spacing therebetween, the resonator elements being arranged to form a closed system, The oscillating component of the plurality of resonator elements is continuously formed in an integrated manner, wherein the supporting component of the oscillating component is opposite to the side of the inner circumferential side and the outer circumferential side of an annular oscillating component And set to the node of the oscillation. A resonator according to claim 1, wherein the plurality of resonator elements are arranged point-symmetrically with respect to a center of the closed system. A resonator according to claim 2, wherein the plurality of resonator elements are annularly arranged according to a circular shape or a polygonal shape. A resonator according to claim 1, wherein the closed oscillation component is formed to maintain an antinode to antinode distance and a node to node distance of an oscillation constant. The resonator of claim 1, wherein the length of the oscillating component is an integer multiple of an oscillating wavelength. The resonator of claim 1, wherein the support assemblies of the oscillating assembly are disposed below the oscillating assembly. The resonator of claim 6, wherein the support components of the oscillating component are disposed in oscillation with respect to the annular oscillating component. All nodes. The resonator of claim 6, wherein the support components of the oscillating component are disposed at every other node of the oscillation with respect to the annular oscillating component. The resonator of claim 1, wherein the support assemblies of the oscillating assembly are disposed on a side of the oscillating assembly. The resonator of claim 9, wherein the support components of the oscillating component are disposed on all sides of the oscillation with respect to the sides of the inner circumferential side and the outer circumferential side of the annular oscillating component. . The resonator of claim 9, wherein the support components of the oscillating component are disposed at an interlaced node of the oscillation with respect to a side of both the inner circumferential side and the outer circumferential side of the annular oscillating component. . The resonator of claim 9, wherein the support members are formed continuously and integrally on the outer side of the oscillating assembly. A resonator according to claim 12, wherein the support members are formed on the same plane as the oscillating assembly. A resonator according to claim 12, wherein the support members in contact with the oscillating member have a square cross-sectional shape. The resonator of claim 1, wherein the electrodes of the resonator are disposed above, below, in a lateral or oblique direction of the oscillating assembly. The resonator of claim 1, wherein the electrodes of the resonator are disposed corresponding to the anti-nodes of the oscillating component. An oscillator configured by using a resonator, The resonator includes a plurality of resonator elements each having an electrode and an oscillating component opposite the electrode and having a spacing therebetween, the resonator elements being arranged to form a closed system, wherein The oscillating component of the plurality of resonator elements is continuously formed in an integrated manner, wherein the supporting component of the oscillating component is opposite to the side of both the inner circumferential side and the outer circumferential side of an annular oscillating component. It is set at every other node of the oscillation. A communication device having an oscillation circuit for frequency conversion, configured using an oscillator, the oscillator comprising a plurality of resonator elements each having an electrode and an oscillation opposite the electrode The assembly has a spacing therebetween, the resonator elements are configured to form a closed system, wherein the oscillating components of the plurality of resonator elements are continuously formed in an integrated manner, wherein the support assembly of the oscillating assembly It is disposed at every other node of the oscillation with respect to the side faces of both the inner circumferential side and the outer circumferential side of a ring-shaped oscillating member.