CN101399526A - Resonator, oscillator and communication device - Google Patents
Resonator, oscillator and communication device Download PDFInfo
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- CN101399526A CN101399526A CNA2008101688494A CN200810168849A CN101399526A CN 101399526 A CN101399526 A CN 101399526A CN A2008101688494 A CNA2008101688494 A CN A2008101688494A CN 200810168849 A CN200810168849 A CN 200810168849A CN 101399526 A CN101399526 A CN 101399526A
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Abstract
A resonator containing a plurality of resonator elements, respectively having an electrode and an oscillating component opposed while having a space in between, arranged so as to form a closed system. The oscillating component of the plurality of resonator elements is continuously formed in an integrated manner.
Description
Technical field
The present invention relates to utilize mechanical resonant resonator, use the oscillator of this resonator and be provided with the communicator of this oscillator.
Background technology
Along with development of wireless communication devices in recent years, utilize the communication equipment of wireless communication technology need reduce its size and weight.MEMS (micro electro mechanical system) (MEMS) technology has been used to process the RF signal processing unit that once is difficult to miniaturization, and described micro electro mechanical system (MEMS) technology can be made meticulous mechanical structure based on the microprocessing that is used for semiconductor machining.
For example, utilize the mechanical resonator of mechanical resonant to know.Such as the RF unit of the use mechanical resonator of filter, oscillator and frequency mixer, because their sizes are little and can be integrated, so they are expected to be applied to the communications field.Japanese Patent Application Laid-Open communique No.JP2006-33740 (patent document 1) and U.S. Patent No. 6249073 (patent document 2) disclose the technology of mechanical resonator.
Manufacturing utilizes the oscillator of resonator to need the little insertion loss and the resonator of high Q value.Because mechanical resonator has high impedance,, will cause the Q value of resonator to reduce and be connected in parallel so the identical resonator element that need be connected in parallel promptly needs by the reduction impedance that is connected in parallel.
Utilize the parallel resonator of mechanical oscillation to have two kinds of reasons that may reduce the Q value: the variation of the characteristic of each unit resonator element in (1) parallel resonator; (2) kinetic energy of oscillating element leaks to substrate through support component.Reason (2) also is applicable to the resonator of individual unit.Below will explain this two reasons.
Here will describe reason (1) in detail.In order to reduce the insertion loss of mechanical resonator, the identical resonator element that may need to be connected in parallel is to reduce impedance.A kind of possible mode of the unit's of being connected in parallel resonator is usually shown in Figure 35 A and 35B, thereby a plurality of resonator element is connected in parallel with formation with the grid array graphical layout.By unit resonator element 2 shown in Figure 36 is arranged with array pattern, just can constitute the parallel resonator 1 shown in Figure 35 A and 35B.
Take into account structural vibrations characteristic as shown in figure 35, the outer peripheral areas and the central area of array are done one relatively, the vibration frequency of each resonator element 2 changes.There are two possible reasons for change of resonance frequency.Reason is that to act on the stress of oscillating element (so-called oscillating element 7) different in central area and outer peripheral areas, Another reason is in making the process of resonator element 2, is easy to produce the constructive variations of film thickness etc. (specifically being the film thickness of oscillating element) in the core of array and outer part office.
Therefore, compare with single resonator, any distribution of wave number can reduce the Q value in the parallel resonator 1.The reduction of the Q value due to when realizing being arranged in parallel is necessary to reduce the change of resonance frequency in the parallel resonator.But,, be difficult to eliminate to the difference of the stress of oscillating element and the constructive variations in the resonator element for the situation that resonator element 2 is arranged with array pattern.
Below will describe reason (2) in detail.In order to improve the Q value of resonator, importantly avoid the kinetic energy of oscillating element to leak to substrate.In the resonator element of arranging according to array pattern 2, each oscillating element 7 is by support component 8[8A, 8B] support the i.e. oscillating element 7 of each oscillating element 7 and adjacent resonator element 2 be separated (referring to Figure 35 B) like this.Therefore, a part of kinetic energy of the vibration of each resonator element 2 can be through support component 8[8A, 8B] leak to substrate 3, thus the Q value will reduce.
Summary of the invention
The present invention proposes after at above-mentioned situation, and the structure by balanced each resonator element and act on the stress of each resonator element, the parallel resonator that provides a kind of Q value to obtain improving.
The invention allows for oscillator that uses above-mentioned resonator and the communicator that is provided with this oscillator.
According to embodiments of the invention, a kind of resonator that comprises a plurality of resonator elements has been proposed, each resonator element has electrode and the oscillating element of facing and leave each other the space mutually respectively, described a plurality of resonator element is through arranging that wherein the oscillating element of a plurality of resonator elements forms continuously in the one mode to form closed system.
Resonator configurations of the present invention is for to be connected to parallel resonator with a plurality of resonator elements, a plurality of resonator elements are through arranging to form closed system, and the oscillating element of a plurality of resonator elements forms continuously in the one mode, thereby the structure of each resonator element and the stress that acts on the oscillating element of each resonator element are able to balance.
According to the present invention, a kind of oscillator that utilizes resonator configurations to form has also been proposed, this resonator comprises a plurality of resonator elements, each resonator element has the electrode and the oscillating element of facing and having each other the space mutually respectively, described a plurality of resonator element is through arranging that wherein the oscillating element of a plurality of resonator elements forms continuously in the one mode to form closed system.
Oscillator of the present invention is made of parallel resonator, this parallel resonator comprises a plurality of resonator elements that are arranged to closed system, and oscillating element with a plurality of resonators that form continuously in the one mode, thereby the structure of each resonator element and the stress that acts on the oscillating element of each resonator element are able to balance in the parallel resonator, therefore can obtain good oscillator character.
According to the present invention, a kind of communicator with the oscillating circuit that is used for frequency inverted is provided, this oscillating circuit is made of oscillator, this oscillator comprises a plurality of resonator elements, each resonator element has electrode and oscillating element respectively and through arranging that wherein the oscillating element of a plurality of resonator elements forms continuously in the one mode to form closed system.
Communicator of the present invention adopts the above-mentioned oscillator that is configured to parallel resonator, thereby can obtain good characteristic.
According to resonator of the present invention, provide a kind of parallel resonator with high Q value.According to oscillator of the present invention, provide a kind of oscillator with high frequency stability.
According to communicator of the present invention, provide a kind of communicator that guarantees good vibration characteristics and high reliability.
Description of drawings
Figure 1A and 1B are respectively the plane graph of the exemplary unit resonator element that resonator adopted of the embodiment of the invention and the cutaway view of A-A along the line;
Fig. 2 is the floor map of first embodiment of expression resonator of the present invention;
Fig. 3 is the enlarged drawing of the major part of resonator shown in Figure 2;
Fig. 4 is the cutaway view of B-B along the line of resonator of first embodiment of Fig. 2;
Fig. 5 A and 5B are the comparison diagrams of representing respectively according to the resonance characteristic of the annular parallel resonator of this embodiment and array parallel resonator;
Fig. 6 is the floor map of second embodiment of expression resonator of the present invention;
Fig. 7 A is the floor map of the 3rd embodiment of expression resonator of the present invention, and Fig. 7 B is the cutaway view of unit resonator element wherein;
Fig. 8 A is the floor map of major part of the 4th embodiment of expression resonator of the present invention, and Fig. 8 B is a schematic diagram of representing the polygon annular of unit resonator element wherein.
Fig. 9 A and 9B be represent respectively resonator of the present invention embodiment the unit resonator element that resonator adopted another example plane graph and along the cutaway view of wherein line C-C; Fig. 9 C is the local amplification view of described unit resonator element.
Figure 10 A is the floor map of the 5th embodiment of expression resonator of the present invention, and Figure 10 B is the enlarged drawing of major part wherein;
Figure 11 is the cutaway view (along the line D-D among Figure 10 B) of the resonator of the 5th embodiment;
Figure 12 is the stereogram of the expression extension that is used to support, extends integratedly from oscillating element according to extension of the present invention;
Figure 13 A is the floor map of the 6th embodiment of expression resonator of the present invention, and Figure 13 B is the enlarged drawing of major part wherein;
Figure 14 A is the floor map of the 7th embodiment of expression resonator of the present invention, and Figure 14 B is the enlarged drawing that wherein is arranged in the major part of sweep, and Figure 14 C is the enlarged drawing that wherein is arranged in the major part of straight line portion.
Figure 15 is the exemplary configuration diagram of expression according to the method for the support oscillating element that resonator of the present invention adopted;
Figure 16 is the another kind of exemplary configuration diagram of expression according to the method for the support oscillating element that resonator of the present invention adopted;
Figure 17 is expression another exemplary configuration diagram according to the method for the support oscillating element that resonator of the present invention adopted;
Figure 18 is the exemplary configuration diagram of expression according to the supporting mechanism of oscillating element of the present invention;
Figure 19 is the another kind of exemplary configuration diagram of expression according to the supporting mechanism of oscillating element of the present invention;
Figure 20 is expression another exemplary configuration diagram according to the supporting mechanism of oscillating element of the present invention;
Figure 21 A and 21B are plane graph and the stereograms that is respectively applied for the major part of explaining the oscillating element that is formed with sweep;
Figure 22 is the Q value figure that explains 4 supporting constructions of the present invention;
Figure 23 is the Q value figure that explains 6 supporting constructions of the present invention;
Figure 24 A and 24B are respectively according to the floor map of the major part of the embodiment of the invention with along the cutaway view of its center line A-A;
Figure 25 A, 25B and 25C be respectively the floor map of the major part of the 8th embodiment of resonator according to the present invention, along the cutaway view of its center line A-A with along the cutaway view of its center line B-B;
Figure 26 A, 26B and 26C be respectively the floor map of the major part of the 9th embodiment of resonator according to the present invention, along the cutaway view of its center line A-A with along the cutaway view of its center line B-B;
Figure 27 is a diagrammatic sketch of explaining the 9th embodiment working method;
Figure 28 A, 28B and 28C be respectively the floor map of the major part of the tenth embodiment of resonator according to the present invention, along the cutaway view of its center line A-A with along the cutaway view of its center line B-B;
Figure 29 A, 29B and 29C be respectively the floor map of the major part of the 11 embodiment of resonator according to the present invention, along the cutaway view of its center line A-A with along the cutaway view of its center line B-B;
Figure 30 A to 30E is the diagrammatic sketch of the exemplary fabrication steps that adopted when making resonator according to first to fourth embodiment of expression;
Figure 31 A to 31C is the diagrammatic sketch of the exemplary fabrication steps that adopted when making resonator according to the 8th embodiment of expression;
Figure 32 A to 32E is the diagrammatic sketch (sequence 1) of expression manufacturing according to the exemplary procedure of processing of the method for the resonator of the 11 embodiment;
Figure 33 A to 33D is the diagrammatic sketch (sequence 2) of expression according to the exemplary procedure of processing of the manufacture method of the resonator of the 11 embodiment;
Figure 34 is the circuit diagram of expression according to the embodiment of communicator of the present invention;
Figure 35 A and 35B are respectively the floor map and the cutaway views of exemplary array parallel resonator;
Figure 36 is the cutaway view of the exemplary unit resonator element of expression array parallel resonator shown in Figure 35.
Embodiment
Hereinafter explain embodiments of the invention with reference to the accompanying drawings.
At first, explain the structure and the operation principle of the single resonator element of the resonator of forming present embodiment with reference to Figure 1A and 1B.The resonator element of being paid close attention in the present embodiment is micron order and nano level micro-resonator unit.The resonator element 21 of example is the mechanical resonator unit shown in the present embodiment, it has oscillating element (so-called wave beam) 24, input electrode (so-called input signal cable) 26 and output electrode (so-called output signal line) 27, oscillating element 24 as oscillator by means of the support component 23 at its two ends unsettled be supported on substrate 22 above, input electrode (so-called input signal cable) 26 and output electrode (so-called output signal line) 27 are fixed on the substrate 22 as lower electrode and intersect with oscillating element 24 as previously mentioned, leave space 25 simultaneously between described input electrode 26 and output electrode 27 and oscillating element 24.Support component 23 forms with conductive base 28 on the substrate 22 and links to each other.
When the signal of input electrode 26 input produces external force based on electrostatic force to the oscillating element that is applied with dc offset voltage V, resonator element 21 will be with the vibration of the natural resonance frequency of oscillating element 24, and this vibration will be with signal via 25 transferring to output electrode 27 between microvoid.Resonator element 21 is the resonator elements that utilize the flexural vibrations of secondary modes.
Fig. 2 to 4 shows the resonator of the embodiment of the invention or first embodiment of so-called parallel resonator.These accompanying drawings are represented schematic structure, and wherein Fig. 2 is the plane graph of resonator entire portion, and Fig. 3 is the plane graph of unit resonator element in the resonator, and Fig. 4 is the cutaway view (along the line B-B among Fig. 3) of several units resonator element.
The resonator 31 of present embodiment is made of with the form of sealing a plurality of above-mentioned resonator elements 21 that are arranged on the substrate, and the oscillating element 24 of a plurality of resonator element 21 forms continuously in the one mode.Substrate 22 is made up of the substrate with insulation attribute being formed with on the surface of lower electrode at least.For example, can use the semiconductor substrate that is formed with dielectric film on it or insulating glass substrate etc. as substrate.All resonator elements 21 of arranging with parallel-connection structure to be being circular layout, thereby each unit arranges with point symmetry that with respect to the center of closed system and each unit is arranged to circle circlewise in the present embodiment.In the case, having the close-shaped oscillating element that joins together 24 forms according to annular.
In other words, a plurality of resonator elements 21 form a line and circularize, thereby alternately arrange the vibration antinode and the node of oscillating element 24.
The input electrode 26 of each resonator element 21 with in the inside of the oscillating element 24 of annular or the lead 41 of the outside circular concentric that forms link to each other (with the so-called input signal cable of input electrode 26 common formation), in the present embodiment, lead 41 forms at annular oscillating element 24 " inside ".The output electrode 27 of each resonator element 21 with link to each other (with the so-called output signal line of output electrode 27 common formation) in the inside of the oscillating element 24 of annular or the lead 42 of the outside circular concentric that forms, lead 42 forms at annular oscillating element 24 " outside " in the present embodiment.Electronic pads or so-called input terminal t1 extend internally by the lead 41 from the concentric circuitry shapes of input side to obtain, and stretch out and obtain and electronic pads or so-called outlet terminal t2 are leads 42 from the concentric circuitry shapes of outlet side.
In addition, form the oscillating element 24 of closed ring, thereby keep between the antinode of vibration between distance and node distance constant.The length of the oscillating element 24 of closed ring is the same long with the integral multiple of vibration wavelength.That is, oscillating element 24 annulars are formed by connecting, thereby keep the antinode of vibration and the number of node to be even number and to equate.
Form the support component 23 of the oscillating element 24 that is unified into one at the node place of vibration.In the present embodiment, as shown in Figure 4, support component 23 is located at both sides, and input electrode 26 and the output electrode 27 with the unit resonator element places between two support components 23 simultaneously, in other words, support component 23 be positioned at vibration every one node place.Fig. 4 is a schematic diagram, has saved the pedestal 28 that links to each other with support component 23 shown in Figure 1.As long as can obtain the intensity of oscillating element 24, promptly as long as oscillating element 24 does not contact with lower electrode 26,27, support component 23 is not limited to be located at the node place every, also can be located at each node place or every two or more node place.
The resonator 31 of present embodiment for example is formed by connecting by annular by 24 unit resonator elements 21 as shown in Figure 1.
The resonator 31 of first embodiment is made of the resonator element of arranging by annular 21, thereby the position between the whole resonator 31 that is arranged in parallel and each the unit resonator element 21 relation is consistent for all resonator elements 21, and resonator element 21 recurring structures change may be very little.Similarly, the stress that acts on the oscillating element 24 of each unit resonator element 21 can be all to equate.Therefore, can avoid the difference of the characteristic of each resonator element, thereby owing to adopt the reduction of the Q value due to the parallel-connection structure also can avoid, and can obtain the suitable Q value of expectation Q value with the unit resonator thus.
Form in as shown in Figure 2 the mode that joins together by the oscillating element 24 of a plurality of resonator elements 21 that are circular layout, thereby the number of support component 23 tails off with respect to the number of antinode of vibration, therefore leaks to the kinetic energy of the vibration of substrate 22 1 sides by support component 23 to diminish.In other words, leak the vibration that will help adjacent resonator element 21 to a part of kinetic energy of substrate one side.
A plurality of resonator elements are pressed annular and are arranged, promptly the center with respect to circuit is a point symmetry, thereby adopt this oscillating element that joins together 24, the entire portion of resonator 31 can be vibrated under higher order mode, therefore kinetic energy transfers to adjacent resonator element 21, leaks to the kinetic energy of substrate 22 1 sides can reduce generally.Therefore, can improve the Q value of parallel resonator.
Because the length adjustment of oscillating element 24 is the same long with the integral multiple of vibration wavelength, so resonator 31 can the higher order mode vibration.The support component 23 of oscillating element 24 is located at the node place of vibration, allows to vibrate with higher order mode.
Fig. 5 A and 5B have represented the resonance characteristic of the array parallel resonator 1 of the annular parallel resonator 31 of first embodiment and Comparative Examples as shown in figure 36 comparatively.Fig. 5 A represents the resonance characteristic " a " of the parallel resonator 31 of first embodiment, and Fig. 5 B represents the resonance characteristic " b " according to the parallel resonator 1 of Comparative Examples.Fig. 5 A represents the characteristic that drawn when the number that adopts the resonator element be arranged in parallel is 32 sample.Fig. 5 B represents the characteristic that drawn when the number that adopts the resonator element be arranged in parallel is 30 sample.Adopting parallel-connection structure to be intended to reduce under the situation of the insertion loss that comes across resonance peak point, can find that the array parallel-connection structure causes peak separation, the Q value reduces, and causes the great variety (as Fig. 5 B) of Q value.As can be seen, the annular parallel-connection structure of present embodiment has almost completely been eliminated peak separation, and the Q value is reduced, and has reduced Q value variation (as Fig. 5 A) widely.
Fig. 6 shows resonator of the present invention, is second embodiment of so-called parallel resonator.The resonator 55 of present embodiment is configured to support component 23 is located at each node place of vibration.Except the structure of support component 23, the structure of the input electrode 26 of unit resonator element 21, output electrode 27 and oscillating element 24 is identical with its structure in Fig. 2, first embodiment shown in Figure 4, thereby, illustrate with identical Reference numeral with corresponding any part shown in Figure 4 for fear of repeating.
According to the resonator 55 of second embodiment, because support component 23 is arranged in all node places of vibration, thus limited mode of resonance, thus the accuracy of Q value improved.Here identical among other effect that is obtained and above-mentioned first embodiment.
Fig. 7 A and 7B show resonator of the present invention, are the 3rd embodiment of so-called parallel resonator.The resonator 56 of present embodiment is configured to only form output electrode 27 as lower electrode, and arranges support component 23 so that each output electrode 27 is in therebetween, and in other words, support component 23 is arranged in each node of oscillations place of oscillating element 24.In the present embodiment, DC bias voltage V acts on oscillating element 24 by support component 23, and the input input signal.In this case, support component 23 (or oscillating element 24) also plays a part input electrode.In the 3rd embodiment, unit resonator element 57 is made of single output electrode 27 and the oscillating element 24 that supported by two support components 23, and a plurality of units resonator element 57 press the annular layout.Structure among other structure that comprises oscillating element 24 grades and Fig. 2, first embodiment shown in Figure 4 is identical.Therefore, for fear of repeating, illustrate with identical Reference numeral with corresponding any part shown in Figure 4.
Similarly, identical among other effect that is obtained according to the resonator 56 of the 3rd embodiment and above-mentioned first embodiment.
Fig. 8 A and 8B show resonator of the present invention, are the 4th embodiment of so-called parallel resonator.The resonator 59 of present embodiment is configured to connect circlewise unit resonator element 21, thereby forms polygonal shape.This polygon is such as the even number equilateral polygon of equilateral hexagon, equilateral octangle etc.Other structure except polygonized structure is identical to the structure among first embodiment shown in Figure 4 with Fig. 2, therefore for fear of repeating, illustrates with identical Reference numeral with corresponding any part among Fig. 2 to Fig. 4.
Similarly, identical among other effect that is obtained according to the resonator 59 of the 4th embodiment and above-mentioned first embodiment.
Resonator in the foregoing description be set to support component 23 with the oscillating element in the resonator element 24 be arranged in oscillating element 24 below.Fig. 9 A, 9B and 9C show the another kind of structure of resonator, and this structure supports the oscillating element in the resonator element in a different manner.
Shown in Fig. 9 A, 9B and 9C, the resonator 61 of present embodiment has resonator element 62, this resonator element 62 by oscillating element 24, by fixed part 63 and 64 with oscillating element 24 be fixed on support component 66 on the substrate 22, input electrode 26 and the output electrode 27 of handling the signal of telecommunication constitute, formed input electrode 26 and output electrode 27 are opposed with oscillating element 24 on substrate 22, be provided with simultaneously between microvoid 25 between input electrode 26 and output electrode 27 and the oscillating element 24, wherein support component 66 is located at the outside of oscillating element 24.The lead of Reference numeral 41 expression inputs one side, the lead of Reference numeral 42 expression outputs one side.Support component 66 is formed at the outside of oscillating element 24, and joins together with oscillating element 24.In the outside of support component 66, fixed part 64 stretches out continuously and joins together with it from support component 66, and fixed part 63 be located at fixed part 64 below.Fixed part 63 is fixed on the conductive base 81 that is formed on the substrate 22, and input electrode 26 and the output electrode 27 as lower electrode also is formed on the substrate 22 simultaneously.
The node place of the vibration that support component 66 is produced when being formed at oscillating element 24 resonance, promptly vibrative hardly part.By position, size and the rigidity that support component 66 and fixed part 64 are set the two ends of oscillating element 24 can almost be vibrated as the free end of vibration.
The following resonator that is located at oscillating element 24 with support component 23 is compared, in the resonator 61 of present embodiment, from oscillating element 24 leak to the vibrational energy of substrate 22 be very little.It is very little that the benefit of resonator 61 is that also vibrational energy is transferred into the possibility of support component 66, and this is that support component 66 is located at the node of oscillations place because be similar to the foregoing description.
Hereinafter will explain other embodiment of the resonator of the present invention that uses the resonator element 62 shown in Fig. 9 A and 9B.
Figure 10 A, 10B and Figure 11 show resonator of the present invention, are the 5th embodiment of so-called parallel resonator.These accompanying drawings show schematic construction, and wherein Figure 10 A is the plane graph of expression resonator entire portion, and Figure 10 B is the plane graph of unit resonator element in the expression resonator, and Figure 11 is the cutaway view (along the line D-D among Figure 10 B) of resonator.
The resonator 71 of the 5th embodiment is configured to by closed figure a plurality of above-mentioned resonator elements 62 are arranged on the substrate 22, and the oscillating element 24 of wherein a plurality of resonator elements 62 forms continuously with the form of one.Be similar to the above, substrate 22 is made up of the substrate with insulating property (properties) at the surface portion that it is formed with lower electrode at least.For example, can use semiconductor substrate or the insulated substrate that is formed with dielectric film on it.Arrange with point symmetry with respect to the center of closed system with all resonators 71 that parallel-connection structure is arranged, and be circular layout according to circular configuration in the present embodiment.The oscillating element that joins together 24 of sealing forms according to annular.
In the present embodiment, the support component 66 of oscillating element 24 be formed at vibration every one node place, promptly be formed at node part, and be positioned at the outside of the inner circumferential side and the outer circumferential sides of oscillating element 24 corresponding to each wavelength in the secondary vibration mode.In other words, the mode with aforesaid one forms support component 66 continuously from the both sides of oscillating element 24.In the present embodiment, be provided with four support components 66 with respect to a unit resonator element.Support component 66 supports oscillating elements 24, and is fixed on the conductive base 65 by fixed part 64,63, and conductive base 65 is formed on the substrate 22 simultaneously with input electrode 26 and output electrode 27 as lower electrode.
As shown in figure 12, the support component 66 of support oscillating element 24 is and oscillating element 24 contacted parts.Fixed part 64 forms continuously from support component 66.Have such geometry from oscillating element 24 outwardly directed extensions, promptly wide fixed part 64 is continuous with narrow support component 66.Support component 66 from oscillating element 24 continuously and be integrally formed therewith, wherein width d2 preferably is made as the film thickness that equals oscillating element 24 (that is the film thickness of the extension formed of support component 66 and fixed part 64) d1 (d1=d2).In other words, narrow 64A preferably has square cross-sectional shaped.Here the extension of being made up of support component 66 and fixed part 64 forms on identical plane with oscillating element 24.If support component 66 forms with oscillating element 24 with fixed part 64, then can make the mechanical loss minimum at the tie point place of support component 66 and oscillating element 24 on identical plane.Therefore, the Q value of vibrating body can remain greatly.Verified, by being adjusted to d1=d2, under the vibration of oscillating element 24, the twisting of support component 66 becomes steadily, and Q value stabilization ground improves.Confirm that equally also the too big width d2 of narrow 64A makes the possibility that twisting takes place very little, and too little width makes the motion instability of narrow 64A, and therefore can not obtain stable Q value.Verified, when the cross-sectional geometry of narrow 64A is square, can obtain the maximum of Q value.
Therefore other similar has saved detailed description in the above-mentioned structure as Fig. 2 to Fig. 4.With appear at Fig. 2 to Fig. 4 in corresponding any part illustrate with identical Reference numeral, therefore saved explanation.
Because produced the high frequent vibration pattern based on the unit of the wave number of the resonance of resonator element 62, and oscillating element 24 forms the loop system of sealing, so the resonator 71 of the 5th embodiment can produce uniform vibration mode.In this closed system, between the node of the vibration of each resonator element 62 between distance and antinode the distance equate.Therefore, no matter compare which resonator element 62 in the closed system, resonance characteristic is mutually the same, has successfully avoided the structural change in the resonator element 62.Therefore, the variation of the characteristic of each resonator element 62 can be prevented, and the resonator of high Q value and little insertion loss can be realized having thus.And, because the fixed part 63 of oscillating element 24 is located at the outside of oscillating element 24, thus the vibrational energy that may leak along the path of oscillating element 24 → extension 64 → fixed part 63 → substrate 22 can be reduced to substrate 22 1 sides, thus can obtain higher Q value.
Figure 13 A and 13B show resonator of the present invention, are the 6th embodiment of so-called parallel resonator.
Although the resonator element 62 of the 5th and the 6th embodiment is under equal conditions constructed, according to the mode of the manufacturing of closed system, also can be by the resonator of the different resonator element structure closed system of combination.
Figure 14 A to 14C shows according to resonator of the present invention, is the 7th embodiment of so-called parallel resonator that this resonator is based on the combination of different resonator elements.According to the resonator 73 of present embodiment be by combination respectively resonator element 62A, the 62B structure of two types shown in Figure 14 B and 14C form, form closed system according to the figure of the circular orbit shape that constitutes by straight line and curve (for example arc).Resonator element 62A as shown in Figure 14B is arranged in sweep, more specifically say so being similar to the shape shown in Figure 10 B, resonator element 62A forms with the shape of bending with oscillating element 24, the lead 41 that is connected to the lead 42 of output electrode and is connected to input electrode.Resonator element 62B shown in Figure 14 C is arranged in straight line portion, and resonator element 62B, oscillating element 24, the lead 42 that links to each other with output electrode and the lead 41 that links to each other with input electrode are with the shape formation of straight line.
The others of said structure, such as identical with structure described in the 5th embodiment from the arrangement of the extended support component 66 in the both sides of oscillating element, therefore for fear of repeating, illustrate with identical Reference numeral with corresponding any part among Figure 10 A and the 10B.
In the resonator 73 according to the 7th embodiment, although two types resonator element 62A, 62B vibration mode difference, they are designed to have identical resonance frequency.By means of this structure, similar with the 5th and the 6th embodiment, the resonator of being constructed can produce the high frequent vibration pattern based on the unit of the resonance wave number of resonator element here.Be similar to the oscillating element 24 that forms closed system as mentioned above and may produce uniform vibration mode, wherein no matter which resonator element in the closed system can be with identical resonance frequency vibration.
Although increased the design considerations of the characteristic of the resonator element 62A, the 62B that control two types, the very big advantage of present embodiment is that oscillating element 24 can adopt linear pattern resonator element 62B as resonator element.Because in linear pattern oscillating element 24, the inside and outside structure of closed system becomes identical, so calculating and manufacturing that stress is distorted are easier than the oscillating element 24 of flexure type (arc shape).Therefore, can more easily obtain desired frequency characteristic.
Therefore, the resonator 73 of the 7th embodiment preferably is configured to make at least and comprises the ratio of the ratio of straight line portion greater than sweep, and comprises the longest as far as possible straight line portion.
Equally in the present embodiment, can realize being similar to previous described high Q value and little insertion loss.Also can reduce the vibrational energy of leakage, thereby can obtain higher Q value to substrate 22.
Figure 15 to Figure 17 is the illustrative methods of the support oscillating element that resonator adopted of above-mentioned the 5th to the 7th embodiment of expression, and represents the exemplary position of support component more specifically.Illustrate with identical Reference numeral with corresponding any part among the 5th to the 7th embodiment.
In method for supporting shown in Figure 15, fixed part 63 be arranged in oscillating element 24 two outsides and corresponding to the vibration all node.In other words, being configured to of resonator: oscillating element 24 corresponding to the both sides of all node positions of vibration and continuously and be integrally formed therewith extension 64 from oscillating element 24, and fixed part 63 is arranged in below the extension 64 with its all node of supported on both sides from oscillating element 24.Under the situation that every single wavelength is provided support, then oscillating element 24 vibrates under main drive pattern.In other words, under the situation that every half wavelength is provided support, then oscillating element 24 vibrates under the secondary drive pattern.In brief, construct this resonator and make that in its unit resonator element, oscillating element 24 is supported by 6 support components.
Example as shown in figure 15 is connected to the both sides of oscillating element 24 with support component 66 in the position corresponding to all node, can improve the Q value of resonator, can limit mode of resonance, and can improve the precision of Q value.
Two outsides of method for supporting shown in Figure 16 to be support component 66 in the position corresponding to each node of single vibration wavelength be arranged in oscillating element 24.In other words, being configured to of resonator: in each node position corresponding to the single wavelength that vibrates, form support component 66 integratedly and continuously in the both sides of oscillating element 24 and with oscillating element 24, and fixed part 63 is arranged in below support component 66 extended fixed parts 64.In brief, construct this resonator and make that in its unit resonator element, oscillating element 24 is supported by 4 support components.This structure makes oscillating element 24 vibrate under the secondary drive pattern, and can be applicable to adopt the resonator of secondary modes resonance frequency.
Example as shown in figure 16, corresponding to vibration every one node position support component 66 is connected to the both sides of oscillating element 24, can make resonator have high Q value.
Although do not illustrate in the accompanying drawing, in the resonator that adopts the 3rd rank pattern resonance frequency, in the unit resonator element, two node of vibration come across between the support component 66 at two ends.
The method of support resonator shown in Figure 17 for example is to adopt the secondary modes resonance frequency.In this method for supporting, support component 66 alternately is arranged in the inner circumferential side and the outer circumferential sides of oscillating element 24, in other words, each node of oscillations is furnished with single support component 66.That is, resonator configurations is in the inner circumferential side of oscillating element 24 and outer circumferential sides, alternately forms support component 66 one by one corresponding to the node that vibrates, and fixed part 63 is arranged in below support component 66 extended fixed parts 64.This resonator is constructed to oscillating element 24 and is supported by 3 fixed parts 63 in the unit resonator element.
Example as Figure 17, when being configured to the node of support component 66 when alternately being connected the inner circumferential side of oscillating element 24 and outer circumferential sides with respect to vibration, can obtain high Q value, and because do not have the resonator of support component to compare with the node place, improved the stability of resonance condition, so also can easily obtain more stable Q value.
The resonator of above-mentioned external support closed system oscillating element 24 from oscillating element 24, for the unit resonator, littler than the variation of the Q value of oscillating element shown in Figure 16 24 in 4 supporting constructions of what is called that support by support component 66 every one node place in the variation of the Q value of oscillating element shown in Figure 15 24 in 6 supporting constructions of what is called that all node places are supported by fixed part 63.Figure 22 is the variation diagram of the Q value in 4 supporting constructions of expression.Figure 23 is the variation diagram of the Q value in 6 supporting constructions of expression.Axis of abscissas among the figure is represented the Q value, and axis of ordinates is represented frequency.
From Figure 22 and figure shown in Figure 23 as can be seen, 4 supporting constructions have provided the standard deviation of the normal distribution curve I of the index that changes as the Q value, σ=± 10.6% wherein, and 6 supporting constructions have provided the standard deviation of the normal distribution curve II of σ=± 3.5%.Therefore can confirm that compare with 4 supporting constructions, 6 supporting constructions can more effectively reduce the variation of Q value.The Q value is the important parameter of decision product quality, and wherein the variation of Q value means that for a short time the variation of product is little.
Figure 18 to Figure 20 is the exemplary supporting mechanism that expression is used for oscillating element 24.
Supporting mechanism shown in Figure 180 represents that support component 23 is arranged in the situation below the oscillating element 24.The supporting mechanism 76 of present embodiment comprise be formed at conductive base 81 on the substrate 22 simultaneously as the input electrode 26 of lower electrode and output electrode 27, corresponding to the supporting zone 24a of the node of the vibration of oscillating element 24, be fixed on the conductive base 81 and at the support component 23 of oscillating element 24 1 side supporting zone 24a.Reference numeral 25 is illustrated in formed space between lower electrode and the oscillating element 24.Conductive base 81 is by forming with the lower electrode identical materials and having identical film thickness with lower electrode.In manufacture process, can carry out accurate processing as follows, in same procedure of processing, form conductive base 81, as the input electrode 26 of lower electrode and output electrode 27 and the lead 41 and 42 (referring to Figure 10 A and 10B, Figure 13 A and 13B and Figure 14 A to 14C) that links to each other with lower electrode, and in same procedure of processing formation oscillating element 24 and support component 23.
Supporting mechanism shown in Figure 19 represents that support component 66 is arranged in the situation of oscillating element 24 outsides.The supporting mechanism 77 of present embodiment is constructed to: form conductive base 81 simultaneously with input electrode 26 and output electrode 27 as lower electrode on substrate, at the outside of oscillating element 24 and its continuously and form support component 66, fixed part 64 stretches out continuously from support component 66, and fixed part 63 is fixed on the conductive base 81 and support fixation portion 64.Reference numeral 25 representation spaces.Conductive base 81 is by forming with the lower electrode identical materials and having identical film thickness with lower electrode.Support component 66 forms the extension of oscillating element 24 and joins together with oscillating element 24, and forms in the node position corresponding to the vibration of oscillating element 24.Be similar to the above, each support component 66 forms has narrow and wide portion with oscillating element 24 contacted sides.In manufacture process, can guarantee accurate processing as follows, in same procedure of processing, form conductive base 81, (for example as the input electrode 26 of lower electrode and output electrode 27 and the lead that links to each other with this lower electrode, corresponding to conductor layer shown in Figure 2 41,42), and in same procedure of processing, form support component 66, fixed part 64 and fixed part 63.
First difference of supporting mechanism 77 and supporting mechanism 76 is the layout of support component.In supporting mechanism 77, fixed part 63 is formed at the outside of the closed system (circle, polygon, rail-like) of oscillating element 24.Second difference is the motion of support component.The support component 23 of supporting mechanism 76 shows as bending motion.The fixed part 63 of supporting mechanism 77 shows as twist motion.
Supporting mechanism shown in Figure 20 is represented the situation that the ratio of rigidity of oscillating element 24 and support component 86 changes.The supporting mechanism 78 of present embodiment be configured to comprise the support component 86 made by the material that is different from oscillating element 24, with support component 86 one and the fixed part 87, the fixed part below fixed part 87 63 and the pedestal 81 that form continuously.In this case, support component 86 joins and partly covers oscillating element 24 together with oscillating element 24.Especially, be different from the material of oscillating element 24, can greatly control the intensity of support by the material that makes the support component 86 of forming extension.
As shown in figure 21, above-mentioned annulus resonator there are differences on the inside and outside geometry of resonator element 22.Because the difference of curvature between inner periphery and excircle, the width that is assumed to the zone of node of oscillations can change.More specifically, it is narrower than outer circumferential sides in the inner circumferential side of closed system to be assumed to the width in zone of node.In this structure, shown in Figure 21 B and table 1, preferably make structurally difference to some extent between the inboard of support component and the outside.
Table 1
Length L | Width W | Thickness d | Hardness | |
Outer circumferential sides | Shorter | Broad | Thicker | Harder |
Inner circumferential side | Longer | Narrower | Thinner | Softer |
As shown in table 1, the part or all of inboard for the oscillating element 24 that seals in the length L of narrow 64A of each shown in the table 1, width w, thickness d and the hardness can be different with the outside.The physical quantity of the inboard by making oscillating element 24 and the extension 64A in the outside is distinguished to some extent, the elastic effect that acts on the vibrating body in the inboard of support component and the outside becomes identical, and the resonance that therefore can advantageously make vibrating body is consistent between the inner circumferential side of annulus and outer circumferential sides.Utilize this effect, can keep high Q value.
In the resonator 31,55,56,59,71 to 73 of above-mentioned first to the 7th embodiment, shown in Figure 24 A and 24B, preferably the anti-node location place corresponding to the vibration 101 of oscillating element 24 forms input electrode 26 and output electrode 27 on substrate 22, leaves space 25 simultaneously between oscillating element 24 and electrode.By input electrode 26 and output electrode 27 being located at the antinode place of vibration 101, can improve the conversion efficiency of the signal that comes self-electrode, Oscillation Amplitude can be increased, and high Q value can be obtained thus.
Although the input electrode 26 of structure and output electrode 27 shown in above-mentioned first to the 7th embodiment be located at oscillating element 24 below, another kind of feasible structure example is as being located at input electrode 26 and output electrode 27 top or side (in the side direction) of oscillating element 24.Below will set forth these embodiment.
Figure 25 A to 25C shows according to resonator of the present invention, is the 8th embodiment of so-called parallel resonator.Be configured to input electrode 26 and output electrode 27 forms according to the resonator 74 of present embodiment above oscillating element 24.Shown in Figure 25 C, input electrode 26 and output electrode 27 form by conductive pole 75 and support.Post 75 form be formed at substrate 22 on inner periphery and excircle toroidal conductor 41 and 42 contact.The others of this structure are similar to the structure among first embodiment, so for fear of repeating, illustrate with identical Reference numeral with corresponding any part among Fig. 3 and Fig. 4.Similarly in resonator 74, by the signal that the input electrode 26 that is located at oscillating element 24 tops is imported, oscillating element 24 is with its natural resonance frequency vibration, and this signal transfers to output electrode 27 through space 25.
According to the resonator 74 of the 8th embodiment, can obtain to be similar to the effect of aforesaid raising Q value.In the resonator structure shown in first to the 7th embodiment, also can obtain similar effects by the top that electrode 26 and 27 is located at oscillating element 24.
Although be set to extend from inner circumferential side and outer circumferential sides at the electrode 26 and 27 shown in Figure 25 A on oscillating element 24 tops, oscillating element 24 places between electrode 26 and 27 simultaneously, but electrode 26 and 27 also can be arranged to only any extension from inner circumferential side and outer circumferential sides.
Figure 26 A to 26C shows according to resonator of the present invention, is the 9th embodiment of so-called parallel resonator.The resonator 75 of present embodiment is configured to the side that input electrode 26 and output electrode 27 are located at oscillating element 24.In the present embodiment, input electrode 26 is practised physiognomy and is formed over the ground, simultaneously oscillating element 24 is placed between the input electrode 26, and input electrode 26 is faced mutually with the inner circumferential side of oscillating element 24 and the both side surface of outer circumferential sides.Similarly, output electrode 27 is practised physiognomy over the ground and to be provided with and adjacent with input electrode 26, simultaneously oscillating element 24 is placed between the output electrode 27, and output electrode 27 is faced mutually with the inner circumferential side of oscillating element 24 and the both side surface of outer circumferential sides.Because if input electrode 26 and output electrode 27 just in time are arranged on oscillating element 24 next doors, then oscillating element 24 can not be vibrated, so input electrode 26 and output electrode 27 are set to as shown in FIG. from upwards skew of oscillating element 24.Selectively, shown in chain-dotted line, input electrode 26 and output electrode 27 are set to offset downward from oscillating element 24.
Although do not illustrate among the figure, be similar to shown in Figure 25 C, input electrode 26 and output electrode 27 are supported by conductive pole 75 by the toroidal conductor 41 that forms with one heart with respect to oscillating element 24 on substrate 22 and 42 respectively.The others of this structure are similar to the structure among first embodiment, so for fear of repeating, illustrate with identical Reference numeral with corresponding any part among Fig. 3 and Fig. 4.
Similarly in this resonator 75, by the signal that the input electrode 26 that is located at oscillating element 24 tops is imported, oscillating element 24 produces vibration at its natural resonance frequency, and this signal transfers to output electrode 27 through space 25.More specifically, as shown in figure 27, thereby when signal is input to input electrode 26 when producing potential difference between input electrode 26 and oscillating element 24, for example, the current potential of supposing oscillating element is for just, the current potential of input electrode 26 is for negative, and then power F1 puts on the fixing input electrode 26 from oscillating element 24, thus oscillating element to directly over move.On the contrary, when input electrode 26 has positive potential and oscillating element 24 when having negative potential, power is with opposite directive effect, thus oscillating element 24 under move.Like this, oscillating element 24 vibrates in vertical direction by input signal.
According to the resonator 75 of the 9th embodiment, can obtain to be similar to the effect of aforesaid raising Q value.About the resonator structure shown in first to the 7th embodiment, by being set to, electrode 26 and 27 faces mutually with the side of oscillating element 24, simultaneously oscillating element 24 is placed between electrode 26 and 27, also can obtain similar effects.
Figure 28 A to 28C shows according to resonator of the present invention, is the tenth embodiment of so-called parallel resonator.The resonator 76 of present embodiment is configured to 27 of input electrode 26 and output electrodes and faces mutually with a side of oscillating element 24.Face mutually with the side of the outer circumferential sides of oscillating element 24 with output electrode 27 although the example constructions shown in the figure is an input electrode 26, input electrode 26 and output electrode 27 can be arranged on the side of the inner circumferential side of oscillating element 24, shown in chain-dotted line.Be similar to shown in Figure 26ly, input electrode 26 and output electrode 27 are set to from upwards skew of oscillating element 24, rather than just in time on the next door of oscillating element 24.Although do not illustrate among the figure, input electrode 26 and output electrode 27 can be set to offset downward from oscillating element 24.Although do not illustrate among the figure, be similar to shown in Figure 25 C, input electrode 26 and output electrode 27 are supported by conductive pole 75 by the toroidal conductor 41 that forms with one heart with respect to oscillating element 24 on substrate 22 and 42 respectively.The others of this structure are similar to the structure among the 9th embodiment, so for fear of repeating, illustrate with identical Reference numeral with corresponding any part among Figure 26 A to Figure 26 C.
According to the resonator 76 of the tenth embodiment, can obtain to be similar to the effect of aforesaid raising Q value.About the resonator structure shown in first to the 7th embodiment, by being set to, electrode 26 and 27 only faces mutually with a side of oscillating element 24, also can obtain similar effects.
Figure 29 A to 29C shows according to resonator of the present invention, is the 11 embodiment of so-called parallel resonator.Be configured to input electrode 26 and the output electrode 27 of the resonator 77 of present embodiment are set to the oblique skew in each side from oscillating element 24, and oscillating element 24 places between input electrode 26 and the output electrode 27 simultaneously.In this case, input electrode 26 and output electrode 27 are provided with by the mode that oscillating element 24 is clipped in the middle with oblique skew.In other words, in the present embodiment, the outer circumferential sides that output electrode 27 is positioned at oscillating element 24 is simultaneously from upwards skew of oscillating element 24, and input electrode 26 is positioned at the inner circumferential side of oscillating element 24 and offsets downward from oscillating element 24 simultaneously.The others of this structure are similar to the structure among the 8th and the 9th embodiment, so for fear of repeating, illustrate with identical Reference numeral with corresponding any part among Figure 25 A to 25C and Figure 26 A to Figure 26 C.
Oscillating element 24 in the resonator 77 of the 11 embodiment vibrates to be similar to the described mode of Figure 26.
Can obtain to be similar to the effect of aforesaid raising Q value according to the resonator 77 of the 11 embodiment.About the resonator structure shown in first to the 7th embodiment, by being set to, electrode 26 and 27 faces mutually with the inner circumferential side of oscillating element 24 and the two sides of outer circumferential sides, simultaneously oscillating element 24 is placed (that is) between electrode 26 and 27, also can obtain similar effects in oblique displacement place.
The method of the support oscillating element 24 that Figure 15 is extremely shown in Figure 17 also can be used for the 8th to the 11 embodiment.
Below, set forth the illustrative methods of manufacturing with reference to Figure 30 according to the resonator of first to fourth embodiment.
At first, shown in Figure 30 A, on the surface of silicon semiconductor substrate 81, for example form silicon dioxide (SiO by low pressure chemical vapor deposition usually
2) film 82 and silicon nitride (SiN) film 83, thereby form dielectric film 84.Above-mentioned substrate 22 is made of semiconductor substrate 81 and dielectric film 84.The double-decker of dielectric film 84 has increased the thickness of dielectric film, and has reduced formed parasitic capacitance between the electrode of silicon substrate 81 and substrate-side effectively.When the sacrifice layer of hereinafter describing (sacrificial layer) was removed selectively, silicon nitride film 83 was as etch stop layer.
Then, shown in Figure 30 B, on dielectric film 84, for example form the polysilicon membrane of phosphorous (P), and make polysilicon membrane graphical by lithography technique and etching technique, thus the conductive base 28 of input electrode 26, output electrode 27 and the support column of formation micro-resonator.
Then, shown in Figure 30 C, forming on the surface that comprises input electrode 26, output electrode 27 and pedestal 28 by low pressure chemical vapor deposition for example is silicon dioxide (SiO
2) sacrifice layer 85 of film, then by such as the planarization of CMP (chemico-mechanical polishing) with sacrifice layer 85 planarizations.Like this, the thickness with expectation forms sacrifice layer 85 on the surface of I/ O electrode 26,27 and pedestal 28.Then, utilize lithography technique and etching technique, in sacrifice layer 85, form the contact hole 86 that extends to the pedestal 28 that is used for post (so-called anchor portion).
Then, shown in Figure 30 D, for example, on the sacrifice layer 85 that comprises contact hole 86, form the polysilicon membrane that is mixed with impurity and has conductivity thus by low pressure chemical vapor deposition.Then, utilize lithography technique and etching technique to make polysilicon membrane graphical, thereby form oscillating element 24 and post 23.
Then, shown in Figure 30 E, utilize and optionally only remove the sacrifice layer of forming by silica membrane 85, thereby between oscillating element 24 and I/ O electrode 26,27, form the space such as the engraving method of DHF method.By these treatment steps, can make resonator according to first to fourth embodiment.
Change the position of pedestal 28 and post 23 and the geometry of oscillating element 24 by changing printed pattern shown in Figure 30, and, can make resonator according to the 5th to the 7th embodiment by being similar to the semiconductor fabrication processes of resonator among first to fourth embodiment.
Below, set forth the exemplary method of manufacturing with reference to Figure 31 according to the resonator of the 8th embodiment.Manufacture process until Figure 31 A is similar to the manufacture process shown in Figure 30 A to 30D that is adopted among above-mentioned first to the 7th embodiment.
More specifically, on the surface of semiconductor substrate 81, usually by forming silicon dioxide (SiO
2) film 82 and silicon nitride (SiN) film 83 to be to form dielectric film 84.On dielectric film 84, form the polysilicon membrane of for example phosphorous (P) and carry out graphical, thereby the pedestal 28 that forms the post that supports oscillating element and the toroidal conductor 41 and 42 that is connected each input electrode and each output electrode (geometric figure of the polysilicon membrane here with shown in Figure 30 B different).Form sacrifice layer 85 then, and in sacrifice layer 85, form the contact hole 86 that extends to the pedestal 28 that is used for post.Afterwards, on sacrifice layer 85, form the polysilicon membrane of conduction, and polysilicon membrane is by graphical, thereby forms oscillating element 24 and oscillating element 24 is fixed on post 23 on the pedestal 28.
Then, shown in Figure 31 B, on the whole surface that comprises oscillating element 24 and sacrifice layer 85, for example form silicon dioxide (SiO by low pressure chemical vapor deposition
2) film.Thickness with expectation on oscillating element 24 forms sacrifice layer 78.Afterwards, utilize lithography technique and etching technique, in sacrifice layer 85,78, form the contact hole (not shown) that extends to post lead 41 and 42, that be used to form input electrode and output electrode (so-called anchor portion) respectively.Usually on the sacrifice layer 78 that comprises contact hole, form the polysilicon membrane of conduction then by low pressure chemical vapor deposition, and utilize lithography technique and etching technique to make polysilicon membrane graphical, thereby the post (not shown) that formation links to each other with lead 41,42 and extended input electrode 26 and output electrode 27 from the top of post.
Next, shown in Figure 31 C, utilize engraving method, only remove sacrifice layer 85,78 selectively, thereby between oscillating element 24 and I/ O electrode 26,27, form space 25 such as the DHF method.In this process, between substrate 22 and oscillating element 24, form space 89 simultaneously.Like this, can make the resonator 74 of the 8th embodiment.
Below, set forth the exemplary method of making according to the resonator of the 11 embodiment with reference to Figure 32 A to 32E.Figure 32 A to 32E is corresponding to the cutaway view shown in Figure 29 C.
At first, the manufacture process until Figure 32 A is similar to the manufacture process until formation sacrifice layer 85 shown in Figure 30 A to 30C that is adopted among above-mentioned first to the 7th embodiment.More specifically, usually by forming silicon dioxide (SiO
2) film 82 and silicon nitride (SiN) film 83 to be to form dielectric film 84 on the surface of semiconductor substrate 81.On dielectric film 84, for example form the polysilicon membrane of phosphorous (P) and carry out graphical, thereby the pedestal 28 that forms the post that supports oscillating element and the toroidal conductor 41 and 42 that is connected input electrode and output electrode respectively (geometry by polysilicon membrane being carried out graphical resulting figure with shown in Figure 30 B different) here.Then, form sacrifice layer 85, and in sacrifice layer 85, form contact hole (not shown) lead 41 and that be used to form post that extends to input electrode.
Then, shown in Figure 32 B, on sacrifice layer 85, form the polysilicon membrane that is mixed with impurity and has conductivity thus by low pressure chemical vapor deposition usually.Utilize lithography technique and etching technique to make polysilicon graphicsization, thereby form the bottom 26a of input electrode and the post of bottom 26a that is connected input electrode 26 and lead 41.
Then, shown in Figure 32 C, form on the whole surface of the bottom 26a that comprises input electrode by low pressure chemical vapor deposition and to be generally silicon dioxide (SiO
2) sacrifice layer 91 of film, then by such as the planarization of CMP with sacrifice layer 91 planarizations, thereby the position of upper surface of exposing the bottom 26a of input electrode.That is, forming sacrifice layer 91 is embedded in wherein the bottom 26a of input electrode.Afterwards, optionally etch away sacrifice layer 91 and 85, thereby form the contact hole that extends to pedestal 28 (not shown)s and be used to form the post of oscillating element.
Then, shown in Figure 32 D, usually by low pressure chemical vapor deposition, on the sacrifice layer 91, comprise on the plane of bottom 26a of input electrode and form the polysilicon membrane that is mixed with impurity and has conductivity thus.Utilize lithography technique and etching technique to make polysilicon membrane graphical, thereby be formed on top 26b, the bottom 24a of oscillating element of the input electrode on the bottom 26a of input electrode and post 23 (not shown)s of oscillating element.Input electrode 26 is made of the bottom 26a of input electrode and the top 26b of input electrode.
Then, shown in Figure 32 E, form on the whole surface of the bottom 24a that comprises input electrode 26 and oscillating element by low pressure chemical vapor deposition and to be generally silicon dioxide (SiO
2) sacrifice layer 92 of film, then by such as the planarization of CMP with sacrifice layer 92 planarizations, thereby expose the upper surface of the bottom 24a of input electrode 26 and oscillating element.Afterwards, optionally etch away sacrifice layer 92,91 and 85, thereby form the contact hole that extends to lead 42 (not shown)s and be used to form the post of output electrode.
Then, shown in Figure 33 A, being similar to the process shown in Figure 32 D, utilize the polysilicon membrane that is mixed with impurity and has conductivity thus to form top 24b, the bottom 27a of output electrode 27 of oscillating element 24 and the post (not shown) of output electrode.Oscillating element 24 is made of the bottom 24a of oscillating element and the top 24b of oscillating element.
Then, shown in Figure 33 B, form sacrifice layer 93, the bottom 27a of oscillating element 24 and output electrode is embedded in wherein, expose its upper surface simultaneously to be similar to the process shown in Figure 32 E.
Then, shown in Figure 33 C,, utilize the top 27b that is mixed with impurity and has the polysilicon membrane formation output electrode of conductivity thus to be similar to the process shown in Figure 33 A.Output electrode 27 is made of the bottom 27a of output electrode and the top 27b of output electrode.
Next, shown in Figure 33 D, utilize engraving method, just optionally remove the silica membrane in sacrifice layer 93,92,91 and 85, thereby between oscillating element 24 and I/ O electrode 26,27, form space 25 such as the DHF method.Like this, can make the resonator 77 of the 11 embodiment.
Basically according to the manufacture method of the resonator 77 of the 11 above-mentioned embodiment, can make the resonator 75 of the 9th embodiment and the resonator 76 of the tenth embodiment equally.
Resonator according to above-mentioned each embodiment arranges in an orderly manner that by annular a plurality of resonator elements are to form closed system, thereby and by arranging integratedly that continuously oscillating element vibrates it on the whole under higher order mode, the structure of each resonator element is identical, and the stress that acts on the oscillating element of each resonator element equates.By means of this structure, can reduce the variation of the characteristic of each unit resonator element in the parallel resonator, the reduction of the Q value that causes by parallel-connection structure can be suppressed, and the Q value that is equal to mutually with the desired value of unit resonator can be obtained.Be lowered because leak to the kinetic energy of the oscillating element of substrate, so even can obtain the Q value higher than the desired value of unit resonator by support component.
According to embodiments of the invention, can make parallel resonator, and utilize this parallel resonator can construct high performance RF unit such as oscillator, filter, frequency mixer etc. with high Q value.Similarly, utilize this RF unit can construct communicator.
Especially, the parallel resonator of present embodiment is preferably used for oscillator.The oscillator of present embodiment example can constitute the good oscillator of frequency stability.
Embodiments of the invention can provide the communicator that utilizes electromagnetic communication, such as mobile phone, Wireless LAN apparatus, wireless transceiver, TV tuner and radio tuner etc., these communicators are by adopting the oscillator based on according to the resonator of the foregoing description to constitute.
Next, set forth the exemplary configurations of the communicator of the oscillator that has adopted the above embodiment of the present invention with reference to Figure 34.
At first, will the structure of transmitting system be described.The I channel sends signal and Q channel transmission signal is supplied with multiplier 201I and 201Q respectively from baseband block 230.Each multiplier 201I and 201Q will come from vibration output two signal multiplications after the phase shift of being scheduled to through phase shifter 202 of oscillator 221, take advantage of then signal be mixed to form a burst.Then, mixed signal provides to multiplier 205 by adjustable amplifier 203 and band pass filter 204, with the output multiplication of oscillator 222, is converted to then and is fit to the frequency that sends in multiplier 205.The output of multiplier 205 provides the antenna 210 that links to each other to duplexer 209 via band pass filter 206, adjustable amplifier 207 and power amplifier 208, carries out wireless transmission from antenna 210 then.In band pass filter 204 and 206, the frequency content except that sending signal frequency is by filtering.Duplexer 209 is frequency dividers, and it provides the signal with transmission frequency from transmitting system to antenna one side, and from antenna one side the signal with receive frequency is offered receiving system.
In receiving system, provide to low noise amplifier 211 via duplexer 209 by antenna 210 received signals, the amplification of low noise amplifier 211 output provides to multiplier 213.With the output multiplication of oscillator 222, and the conversion of signals with receive frequency is the signal with intermediate frequency in multiplier 213.The switching signal that has intermediate frequency then provides to two multiplier 215I and 215Q via band pass filter 214.Each multiplier 215I and 215Q will come from vibration output and two signal multiplications after the phase shift that phase shifter 216 is scheduled to of oscillator 221, thereby obtain I channel received signal and Q channel received signal.So resulting I channel received signal and Q channel received signal provide to baseband block 230. Band pass filter 212 and 214 is with the frequency content filtering outside the received signal frequency.
Be provided with oscillator 221 and 222 so that vibration frequency by control unit 223 control and given by PLL (phase-locked loop) circuit.Wherein control unit 223 is provided with the necessary devices of PLL circuit such as filter, comparator.
In the communicator of structure like this shown in Figure 34, the oscillator that can adopt structure as be shown in the examples is as oscillator 221 and 222.
Communicator according to the present invention is provided with the oscillator of the parallel resonator with high Q value, can obtain the good oscillator character of frequency stability, and the communicator of high reliability can be provided thus.
Figure 34 understands that for example the present invention is used for participating in the situation of oscillator of the communicator of wireless transmission and wireless receiving, and the present invention can be used for the oscillator in the communicator that Wired transmission path participate in to send and receives, and the resonator of embodiment can be used for only participating in the oscillator in communicator that sends or the communicator that only participates in reception further.The present invention also is applicable to the required oscillator of miscellaneous equipment that is used to handle high-frequency signal.
Should be appreciated that those skilled in the art can carry out various modifications, combination, sub-portfolio and change according to design requirement and other factors in the scope of claims and its doctrine of equivalents.
Document of the present invention comprises the relevant theme of submitting to Japan Patent office with on September 28th, 2007 of Japanese patent application No.2007-255864, and the full content of this application is incorporated into herein by reference.
Claims (20)
1. resonator that comprises a plurality of resonator elements, each resonator element have respectively mutually in the face of and have the electrode and the oscillating element in space each other, described a plurality of resonator elements are through arranging forming closed system,
The oscillating element of wherein said a plurality of resonator elements is that the mode with one forms continuously.
2. resonator according to claim 1, wherein said a plurality of resonator elements are arranged with point symmetry with respect to the center of described closed system.
3. resonator according to claim 2, wherein said a plurality of resonator elements are arranged circlewise by circle or polygon.
4. resonator according to claim 1, the oscillating element of wherein said sealing form between the antinode that makes vibration that distance remains unchanged between distance and node.
5. resonator according to claim 1, the length of the oscillating element of wherein said sealing are the integral multiple of vibration wavelength.
6. resonator according to claim 1, the support component of wherein said oscillating element are located at the node place of vibration.
7. resonator according to claim 6, the described support component of wherein said oscillating element be located at described oscillating element below.
8. resonator according to claim 7, the described support component of wherein said oscillating element are located at all node places of vibration with respect to annular oscillating element.
9. resonator according to claim 7, the described support component of wherein said oscillating element with respect to annular oscillating element be located at vibration every one node place.
10. resonator according to claim 6, the described support component of wherein said oscillating element is located at the side of described oscillating element.
11. resonator according to claim 10, the described support component of wherein said oscillating element are located at all node places of vibration with respect to the two sides of the inner circumferential side of described annular oscillating element and outer circumferential sides.
12. resonator according to claim 10, the described support component of wherein said oscillating element with respect to the two sides of the inner circumferential side of described annular oscillating element and outer circumferential sides be located at vibration every one node place.
13. resonator according to claim 10, the described support component of wherein said oscillating element is located at node of oscillations place alternately with respect to the inner circumferential side of described annular oscillating element and the two sides of outer circumferential sides.
14. resonator according to claim 10, wherein said support component are in the outside of described oscillating element continuously and form.
15. resonator according to claim 14, wherein said support component and described oscillating element form at grade.
16. resonator according to claim 14 wherein has square sectional with the contacted described support component of described oscillating element.
17. resonator according to claim 1, the electrode of wherein said resonator are located at the top of described oscillating element, below, next door or obliquely.
18. resonator according to claim 1, the electrode of wherein said resonator is set to the antinode corresponding to oscillating element.
19. an oscillator that utilizes resonator to constitute,
This resonator comprises a plurality of resonator elements, each resonator element have respectively mutually in the face of and have the electrode and the oscillating element in space each other, described a plurality of resonator elements are through arranging forming closed system,
The described oscillating element of wherein said a plurality of resonator elements forms continuously in the mode of one.
20. the communicator with the oscillating circuit that is used for frequency inverted, this oscillating circuit is made of oscillator,
This oscillator comprises a plurality of resonator elements, each resonator element have respectively mutually in the face of and have the electrode and the oscillating element in space each other, described a plurality of resonator elements are through arranging forming closed system,
The oscillating element of wherein said a plurality of resonator elements forms continuously in the mode of one.
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JP2007-255864 | 2007-09-28 | ||
JP2007255864 | 2007-09-28 | ||
JP2007255864A JP4844526B2 (en) | 2006-10-03 | 2007-09-28 | Resonator, oscillator and communication device |
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CN101399526A true CN101399526A (en) | 2009-04-01 |
CN101399526B CN101399526B (en) | 2012-04-04 |
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IL149397A0 (en) * | 1999-11-02 | 2002-11-10 | Ebauchesfabrik Eta Ag | Time base comprising an integrated micromechanical ring resonator |
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