JP2011004251A - Resonator and method of manufacturing the same, and oscillator and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resonator that can be miniaturized, as compared with before, and to provide a method of manufacturing the resonator in resonators that includes a plurality of resonance frequencies, and to provide an oscillator and electronic apparatus that includes such a resonator.SOLUTION: By switching an input terminal to which an input AC signal Sin is input among a plurality of terminals in3, in5 and in7, the input paths of the input AC signal Sin to blocks in a conductor part 111 are switched. Also, by switching an output terminal to which an output AC signal Sout is output among a plurality of terminals out3, out5 and out7, the output path of the output AC signal Sout from blocks in the conductor part 111 are switched. Consequently, a plurality of resonance frequencies fr (a plurality of orders of resonance modes) are excited, according to the locatios in a vibrating part 11 of an insulating film 112 that produces a potential difference in the resonator 1 of a single structure.

Description

  The present invention relates to a resonator to which elemental technology of MEMS (Micro Electro Mechanical Systems) is applied, a method for manufacturing the resonator, and an oscillator and an electronic apparatus including such a resonator.

  With the recent development of wireless communication technology, communication devices using wireless communication technology have been required to be smaller and lighter. Therefore, a micro electro mechanical system (MEMS) technique for producing a fine mechanical structure using a fine processing technique in the semiconductor field has been used for an RF signal processing part that has been difficult to downsize. ing. This MEMS is a system in which micro mechanical elements and electronic circuit elements are fused by silicon process technology, and is mainly called a micro machine in Japan. The MEMS technology can realize a small and low-cost SoC (System on a Chip) while supporting high functionality due to its excellent features such as precision workability.

  As one of the elements using such MEMS technology, there is a mechanical resonator (MEMS resonator) using mechanical resonance, and RF elements such as a filter, a transmitter, and a mixer using this are small in size. Since integration is possible, application to the communication field has begun (for example, Patent Document 1). However, with the increase in the frequency of applications such as mobile phones and millimeter wave communications, such MEMS resonators are also required to have a higher operating frequency than GHz.

  Therefore, in order to realize such a high operating frequency, a dielectric embedded MEMS resonator using longitudinal wave vibration has been proposed. In this resonator, a dielectric film (insulating film) for obtaining an electrostatic driving force is embedded in the vibrating body to generate longitudinal wave vibration, thereby realizing an operation in a high frequency region of GHz or higher.

Dana Weinstein and Sunil A. Bhave, "Internal Dielectric Transduction of a 4.5 GHz Silicon Bar Resonator", IEEE International Electron Device Meeting 2007, pp.415-418.

  10 and 11 show a schematic configuration and an operating principle of a dielectric embedded MEMS resonator (resonator 100-1) using the longitudinal wave vibration. FIG. 10 shows an external perspective configuration. Reference numeral 11 denotes an XY plane (upper surface) configuration. In this resonator 100-1, a cuboid (extending in the X-axis direction) vibrating portion 101 is provided on a support substrate 100 with a gap G therebetween. The vibration part 101 includes a conductor part 101A made of a conductor Si (silicon) or the like and two insulating films 101B made of SiN (silicon nitride) or the like. The conductor portion 101A is electrically separated into three blocks along the AC signal transmission direction (X-axis direction) by these two insulating films 101B. Both side surfaces (ZX side surfaces) of each block are supported with respect to the substrate surface by a beam portion 102 (support beam) and a support portion 103 (anchor). In one of the three blocks, the input AC signal Sin is input from the input signal line Lin to which the capacitor C1 is connected via the support portion 103 and the beam portion 102. On the other hand, in the block on the other end side, an output AC signal is output from the output signal line Lout via the beam portion 102 and the support portion 103. Further, a DC voltage Vdc for applying a potential difference (bias) between both end faces (YZ end faces) of each insulating film 101B is supplied to the middle block through the coil L1.

  In this state, when an input AC signal Sin having an arbitrary frequency is input from the input signal line Lin, an electrostatic attractive force of that frequency is generated in each insulating film 101B, thereby causing a compressive stress in the vibrating portion 101. . Here, when the frequency of the input AC signal Sin is equal to the resonance frequency of longitudinal wave vibration determined by the dimensions of the resonator, the vibration unit 101 causes resonance vibration by longitudinal wave vibration (see waveform W101 in FIG. 11). Then, each insulating film 101B repeats compression and expansion by vibration. Due to the deformation of the insulating film 101B (see arrow P101 in FIG. 11), a potential difference is generated between both end faces (YZ end faces) of each insulating film 101B. Therefore, an output AC signal having a frequency equal to the resonance frequency is generated. Sout is output from the output signal line Lout. Due to such an operation principle, the resonator 100-1 functions as a resonator that selectively transmits only a signal having a certain frequency (resonance frequency) among arbitrary input AC signals Sin.

  However, in such a conventional MEMS resonator, when there are a plurality of functionally required (desired to use) resonance frequencies, it is necessary to prepare a plurality of resonators having different inherent resonance frequencies. Along with this, there has been a problem that the entire resonator is enlarged. This is due to the following reason. That is, first, the resonance frequency in this type of resonator is determined by the material and dimensions of the vibration part and the order of longitudinal wave vibration (order of resonance mode). Therefore, if the material and dimensions of the vibration part are not changed, it is necessary to change the order of the resonance mode in order to change the resonance frequency. This is because it is difficult to realize.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a resonator having a plurality of resonance frequencies that can be miniaturized as compared with the conventional one, a manufacturing method thereof, and such a method. An object of the present invention is to provide an oscillator and an electronic device including a resonator.

  The resonator according to the present invention includes a vibrating portion having a conductor portion and a plurality of insulating portions provided so as to electrically separate the conductor portion into a plurality of blocks, and an input AC signal to the block in the conductor portion. Input by switching the input terminal to which the input AC signal is input among the plurality of input terminals, the plurality of output terminals for outputting the output AC signal from the block in the conductor section, and the plurality of input terminals. An input switching unit that switches a path and an output switching unit that switches an output path by switching an output terminal that outputs an output AC signal among a plurality of output terminals. Examples of such a vibrating part include a part that performs resonance vibration by longitudinal wave vibration according to the frequency of the input AC signal when a potential difference is generated between both ends in the insulating part.

  An oscillator and an electronic device according to the present invention include the resonator according to the present invention that performs resonant vibration.

  In the resonator, the oscillator, and the electronic device of the present invention, the input path of the input AC signal to the block in the conductor portion is switched by switching the input terminal to which the input AC signal is input among the plurality of input terminals. Moreover, the output path of the output AC signal from the block in the conductor portion is switched by switching the output terminal that outputs the output AC signal among the plurality of output terminals. Thereby, according to the position in the vibration part of the insulation part which contributes to a vibration, several resonance frequency is excited. Further, since it is realized in a resonator having a single structure, there is no need to use a plurality of resonators individually as in the prior art.

  The method for manufacturing a resonator according to the present invention includes a step of forming a vibrating portion on a substrate having a conductor portion and a plurality of insulating portions that electrically separate the conductor portion into a plurality of blocks, and a block in the conductor portion. On the other hand, a plurality of input terminals for inputting an input AC signal, a plurality of output terminals for outputting an output AC signal from the block in the conductor portion, and an input terminal to which the input AC signal is input at the plurality of input terminals A step of forming an input switching unit that switches an input path by switching and an output switching unit that switches an output path by switching an output terminal that outputs an output AC signal at a plurality of output terminals. It is.

  In the resonator manufacturing method of the present invention, each of the above steps includes the vibration unit, the plurality of input terminals, the plurality of output terminals, the input switching unit, and the output switching unit. A plurality of resonance frequencies are excited according to the position of the insulating part that contributes to vibration in the vibration part.

  According to the resonator of the present invention, the manufacturing method thereof, the oscillator, and the electronic device, the input path of the input AC signal to the block in the conductor portion is switched by switching the input terminal to which the input AC signal is input at the plurality of input terminals. In addition, since the output path of the output AC signal from the block in the conductor portion is switched by switching the output terminal from which the output AC signal is output at a plurality of output terminals, vibration is generated in the resonator having a single structure. A plurality of resonance frequencies can be excited in accordance with the position of the insulating portion that contributes to the vibration portion. Therefore, it is possible to reduce the size of the resonator having a plurality of resonance frequencies as compared with the related art.

It is a perspective view showing the schematic external appearance structure of the resonator which concerns on one embodiment of this invention. FIG. 2 is a top view and a waveform diagram schematically showing the configuration and operation principle of the resonator shown in FIG. 1 and waveforms of respective resonance modes. FIG. 3 is a cross-sectional view illustrating an example of a method for manufacturing the resonator illustrated in FIG. 1 in the order of steps. FIG. 4 is a cross-sectional view illustrating a process following FIG. 3. FIG. 2 is a top view schematically illustrating a connection state at the time of resonance in a third-order mode in the resonator illustrated in FIG. 1. FIG. 2 is a top view schematically illustrating a connection state at the time of resonance in a fifth-order mode in the resonator illustrated in FIG. 1. FIG. 2 is a top view schematically illustrating a connection state at the time of resonance in a seventh-order mode in the resonator illustrated in FIG. 1. It is the top view and waveform diagram which represent typically the structure of the resonator which concerns on the modification of this invention, an operation principle, and the waveform of each resonance mode. It is a functional block diagram of the electronic device which concerns on the application example of the resonator of this invention. It is a perspective view showing the external appearance structural example of the conventional resonator. It is a top view which represents typically the structure and operating principle of the resonator shown in FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The description will be given in the following order.
1. Embodiment (an example of a resonator capable of switching between a plurality of resonance modes)
2. Modified example (Another configuration example of a resonator capable of switching between a plurality of resonance modes)
3. Application example (an example of an electronic device incorporating the resonator according to the embodiment and the modification)

<1. Embodiment>
[Configuration of resonator]
FIG. 1 is a perspective view showing a schematic external configuration of a resonator 1 according to an embodiment of the present invention. FIG. 2A shows an upper surface configuration (XY plane configuration) of the resonator 1. ) Schematically. FIG. 2B shows waveforms of a plurality of (here, three) resonance modes (here, third order, fifth order, and seventh order modes) that can be realized in the resonator 1, although details will be described later. It is a thing. The resonator 1 is a MEMS resonator that transmits a high-frequency (for example, about 60 GHz) AC signal by using resonance vibration caused by mechanical longitudinal wave vibration in a vibration section 11 extending in the X-axis direction, which will be described below. It is.

  In the resonator 1, a rectangular parallelepiped vibrating portion 11 is provided on a support substrate 10 with a gap G interposed therebetween. The vibration part 11 includes a conductor part 111 and a plurality of (here, six) insulating films (insulating parts) 112. The conductor 111 is electrically separated into seven blocks 111a to 111g along the transmission direction (X-axis direction) of the AC signal by these six insulating films 112. Both side surfaces (ZX side surfaces) of each block 111a to 111g are supported with respect to the substrate surface by beam portions 12A and 12B (support beams) and support portions 13A and 13B (anchors).

  The support substrate 10 includes a Si substrate 10A and a protective layer 10B laminated on the Si substrate 10A. The protective layer 10B is for protecting the base (Si substrate 10A) when the sacrificial layer 20 described later is removed by wet etching during manufacturing, and is made of an insulating material such as SiN, for example. Therefore, the protective layer 10B has a thickness that can withstand etching (for example, about 200 nm).

The vibration part 11 has a rectangular parallelepiped shape having a size of, for example, (X-axis direction: about 40 μm, Y-axis direction: about 10 μm, Z-axis direction: about 2 μm). In the vibrating portion 11, the conductor portion 111 is made of conductive Si such as polycrystalline Si (p-Si) containing phosphorus (P) and exhibiting conductivity, for example. However, metals (aluminum (Al), titanium (Ti), etc.), semiconductors (Si, germanium (Ge), etc.), or nitrides thereof (titanium nitride (TiN), etc.) and carbides (titanium carbide (TiC), etc.) Other conductive materials such as may be used. Note that the beam portion 12 and the support portion 13 described above are also made of the same material as that of the conductor portion 111. On the other hand, the insulating film 112 is made of an insulating material such as SiN, and has a thickness of about 30 nm, for example. Here, examples of the insulating material other than SiN include oxides such as silicon oxide (SiO ₂ ), titanium oxide (TiO _x ), polyimide, and BCB, nitrides, and organic substances.

  The plurality of blocks 111a to 111g in the vibration unit 11 includes an input block to which an input AC signal Sin is input, an output block to which an output AC signal Sout is output, and a voltage supply block. In the input block, the input AC signal Sin is input from the input signal line Lin to which the capacitor C1 is connected via the support portion 13A and the beam portion 12A. In the output block, an output AC signal is output from the output signal line Lout via the beam portion 12A and the support portion 13A. In the voltage supply block, a DC voltage Vdc for applying a potential difference between both end faces (YZ end faces) of each insulating film 112 is supplied via the voltage supply line Ldc, the beam portion 12B, and the support portion 13B. Specifically, the DC voltage Vdc is supplied here via the beam portion 12B and the support portion 13B at positions corresponding to the voltage supply block. However, in some cases, the DC voltage Vdc may be supplied via a separate terminal or the like without passing through the beam portion 12B and the support portion 13B.

  Here, the resonator 1 of the present embodiment is provided with an input switch SWin (input switching unit), an output switch SWout (output switching unit), and a voltage supply switch SWdc (voltage supply switching unit). One end of the input switch SWin is connected to the input signal line Lin, and the other end can be connected to any one of the terminals (input terminals) in3, in5, and in7. This is a switch for switching the input path for inputting the signal Sin. One end of the output switch SWout is connected to the output signal line Lout, and the other end can be connected to any one of terminals (output terminals) out3, out5, and out7, and the output AC signal Sout is output from the output block. Is a switch for switching the output path for outputting. The voltage supply switch SWdc has one end connected to the voltage supply line Ldc and the other end connectable to any of terminals (voltage supply terminals) dc3, dc5, dc7. It is a switch for switching a voltage supply path for supplying to the supply block. Each of the input switch SWin, the output switch SWout, and the voltage supply switch SWdc is a control signal (not shown; for example, a resonance vibration caused by a plurality of resonance modes to be described later). The switching operation is individually performed according to a control signal indicating which one of them is used). By such switching operation of the input switch SWin, the output switch SWout, and the voltage supply switch SWdc, the arrangement (assignment) of the input block, the output block, and the voltage supply block in the conductor portions 111a to 111g can be switched as described later. It is possible.

  Although details will be described later, the vibration unit 11 has a frequency of the input AC signal Sin when a potential difference (corresponding to the DC voltage Vdc) is generated between both end surfaces (YZ end surfaces) in each insulating film 112. Accordingly, resonance vibration by longitudinal wave vibration is performed (see waveforms W3, W5, and W7 in FIG. 2). Then, the plurality of blocks 111a to 111g and the insulating film in the conductor portion 111 so that each insulating film 112 vibrates along one predetermined direction (here, the X-axis direction: see arrow P1 in FIG. 1). 112 is arranged along the one direction (X-axis direction). Further, in the resonator 1 according to the present embodiment, a plurality of resonance modes (here, the third order) are formed in the resonator 1 having a single structure as shown by the waveforms W3, W5, and W7 shown in FIG. (3 resonance modes including a mode, a fifth order mode, and a seventh order mode).

  Here, the resonance frequency fr in this type of resonator is determined by the material and dimensions of the vibration part and the order of longitudinal wave vibration (order of resonance mode). Therefore, in the vibration part 11 of the present embodiment, since the material and dimensions thereof are constant (not changed), the order of the resonance mode is changed in order to change the resonance frequency fr. Specifically, the switching operation of the input switch SWin, the output switch SWout, and the voltage supply switch SWdc functions effectively according to the resonance mode to be set (contributes to vibration; both end faces (YZ end faces) The position of the insulating film 112 is switched. Therefore, as shown in FIG. 2, each insulating film 112 has at least one of the node portions of the waveforms W3, W5, and W7 in the longitudinal wave vibration of each resonance mode (see the black dots in the waveform of FIG. 2B). ) Or at the vicinity thereof. In addition, by arranging each insulating film 112 in the vicinity of a node portion in longitudinal wave vibration of each resonance mode in this way, more effective resonance vibration is realized.

  Similarly, as shown in FIG. 2, the beam portions 12A and 12B and the support portions 13A and 13B correspond to at least one of the node portions of the waveforms W3, W5, and W7 in the longitudinal wave vibration of each resonance mode. Alternatively, it is preferably arranged in the vicinity thereof. This is because it is avoided that the vibration of the vibration unit 11 is hindered by arranging at such a position. In the resonator 1 of the present embodiment, the vibrating portion 11 is supported from the side surface using the beam portions 12A and 12B. For example, from below the vibrating portion 11 (substrate surface side), etc. You may make it support from another direction.

[Resonator manufacturing method]
The resonator 1 can be manufactured as follows, for example. 3 and 4 show an example of a process for manufacturing the resonator 1 in cross-sectional views, and are a cross-sectional view taken along the line II-II in FIG. 1 (ZX cross-sectional view) and III-III. It is shown by an arrow sectional view (YZ sectional view) along the line.

  First, as shown in FIG. 3A, the protective layer 10B made of the above-described material is formed on the Si substrate 10A by using, for example, a low pressure CVD (Chemical Vapor Deposition) method. Form uniformly with thickness. Thereby, the support substrate 10 is formed. Next, the p-Si layer 15 made of the above-described material is uniformly formed on the support substrate 10 by using, for example, a low pressure CVD method, and then, for example, dry etching using, for example, a photolithography method is performed. And p-Si layer 15 is patterned. The p-Si layer 15 thus patterned serves as a wiring portion such as the input signal line Lin and the output signal line Lout. Thereby, the input switch SWin, the output switch SWout and the voltage supply switch SWdc are also formed at the same time.

Subsequently, as shown in FIG. 3B, a SiO ₂ (silicon oxide) film, for example, having a thickness of about 500 nm is formed on the support substrate 10 and the p-Si layer 15 by using, for example, a low pressure CVD method. Thus, the sacrificial layer 20 is formed. After that, as shown in FIG. 4C, the surface of the sacrificial layer 20 is planarized by using, for example, CMP (Chemical Mechanical Polishing).

  Next, as shown in FIG. 3D, openings for forming the support portions 13A and 13B are formed on the surface of the planarized sacrificial layer 20 by dry etching using, for example, a photolithography method. 21 (contact hole) is formed. The size of the opening 21 is, for example, about 5 μm × 5 μm, and the depth is, for example, about 400 nm.

  Subsequently, as shown in FIG. 3E, the sacrificial layer 20 including the opening 21 is made of the above-described material for forming the conductor portion 111 in the vibration portion 11 by using, for example, a low pressure CVD method. The p-Si layer 16 is uniformly formed with a thickness of about 2000 nm, for example. After that, the p-Si layer 16 is patterned by dry etching using, for example, a photolithography method. As a result, as shown in FIG. 3F, a conductor pattern layer composed of a plurality of (here, three) conductor patterns spaced apart from each other is formed on the sacrificial layer 20.

  Next, as shown in FIG. 3G, an insulating layer 17 made of SiN or the like is formed on the sacrificial layer 20 and on the surface and side surfaces of each conductor pattern by using, for example, a low pressure CVD method. Form uniformly with thickness.

  Subsequently, as shown in FIG. 4A, the p-Si layer 17 (conductor layer) made of the above-described material is again uniformly formed on the insulating layer 17 with a thickness of about 2000 nm, for example. . After that, as shown in FIG. 4B, the surfaces of the p-Si layer 16 (conductor pattern layer), the insulating layer 17 and the p-Si layer 18 are planarized using, for example, CMP. As a result, the insulating layer 17 serving as the insulating film 112 is embedded between the p-Si layers 16 and 18 serving as the blocks of the conductor portion 111.

  Next, as shown in FIG. 4C, the p-Si layers 16 and 18 including the embedded insulator layer 17 are patterned by dry etching using, for example, a photolithography method. Thereby, the external shape of the vibration part 11 is formed with beam part 12A, 12B and support part 13A, 13B.

  Subsequently, as shown in FIG. 4D, wet etching using an etching solution such as a DHF (diluted hydrofluoric acid) solution is performed to selectively remove the sacrificial layer 20. Thereby, the vibration part 11 is supported by the beam parts 12A and 12B and the support parts 13A and 13B via the gap G with respect to the substrate surface. At this time, the insulating layer 17 other than the buried portion is also removed at the same time. Thus, the resonator 1 shown in FIG. 1 is completed.

[Operation and effect of resonator]
(basic action)
The resonator 1 according to the present embodiment functions as a resonator by converting only a signal having a specific frequency in an electric signal into mechanical vibration and converting the mechanical vibration into an electric signal again. .

  Specifically, first, when an input AC signal Sin having an arbitrary frequency is input from the input signal line Lin to the input block of the conductor portion 111 via the support portion 13A and the beam portion 12A, each insulating film 112 is provided. , An electrostatic attractive force of that frequency is generated, and compressive stress acts in the vibration part 11. That is, conversion from an electrical signal to mechanical vibration is performed.

  Here, when the frequency of the input AC signal Sin is equal to the resonance frequency fr of the longitudinal wave vibration determined by the dimensions of the resonator 1, the vibration unit 11 performs the resonance vibration by the longitudinal wave vibration (the waveform in FIG. 2B). W3, W5 and W7).

  Then, the insulating film 112 repeats compression and expansion by vibration. Due to the deformation of the insulating film 112 (see arrow P1 in FIG. 1), a potential difference due to the induced electromotive force is generated on both end faces (YZ end faces) of the insulating film 112. That is, reconversion from mechanical vibration to electrical signals is performed. As a result, an output AC signal Sout having a frequency equal to the resonance frequency fr is output from the output block of the conductor portion 111 from the output signal line Lout via the beam portion 12B and the support portion 13B. Based on such an operation principle, the resonator 1 functions as a resonator that selectively transmits only a signal having a certain frequency (resonance frequency fr) among arbitrary input AC signals Sin.

(Resonance mode switching operation)
Next, the resonance mode switching operation, which is one of the characteristic parts of the present invention, will be described in detail with reference to FIGS. 5 to 7 schematically show the connection state at the time of resonance in each resonance mode in the resonator 1, FIG. 5 shows the resonance by the third-order mode, and FIG. 6 shows the resonance by the fifth-order mode. FIG. 7 shows the time of resonance in the seventh-order mode.

  First, at the time of resonance in the tertiary mode shown in FIG. 5, the other end of the input switch SWin is connected to the terminal in3, the other end of the output switch SWout is connected to the terminal out3, and the other end of the voltage supply switch SWdc is connected to the terminal dc3. Connected to. Thereby, the input AC signal Sin is input to the block 111a in the conductor portion 111 via the input signal line Lin, the terminal in3, the support portion 13A, and the beam portion 12A. The DC voltage Vdc is supplied to the blocks 111b and 11f in the conductor portion 111 through the voltage supply line Ldc, the terminal dc3, the support portion 13B, and the beam portion 12B, respectively. Therefore, of the six insulating films 112, only two insulating films 112 positioned between the blocks 111a and 111b and between the blocks 111f and 111g function selectively and effectively (contribute to vibration; both end surfaces (Y A potential difference occurs between the −Z end faces). Accordingly, only the resonant vibration in the third-order mode is excited as shown by the waveform W3 in the figure, and the output AC signal Sout is output from the block 111g through the beam portion 12A, the support portion 13A, the terminal out3, and the output signal line Lout. Is output. The other four insulating films 112 do not function effectively (does not contribute to vibration; no potential difference is generated between both end faces (YZ end faces)), and therefore other modes (5th mode, 7th mode). Resonant vibration is not excited.

  6, the other end of the input switch SWin is connected to the terminal in5, the other end of the output switch SWout is connected to the terminal out5, and the other end of the voltage supply switch SWdc is the terminal dc5. Connected to. Thus, the input AC signal Sin is input to the block 111b in the conductor portion 111 via the input signal line Lin, the terminal in5, the support portion 13A, and the beam portion 12A. The DC voltage Vdc is supplied to the blocks 111c and 11e in the conductor portion 111 via the voltage supply line Ldc, the terminal dc5, the support portion 13B, and the beam portion 12B, respectively. Therefore, of the six insulating films 112, only two insulating films 112 positioned between the blocks 111b and 111c and between the blocks 111e and 111f function selectively and effectively (contribute to vibration; both end surfaces (Y A potential difference occurs between the −Z end faces). Therefore, only the resonance vibration in the fifth mode is excited as shown by the waveform W5 in the drawing, and the output AC signal Sout is output from the block 111f via the beam portion 12A, the support portion 13A, the terminal out5, and the output signal line Lout. Is output. The other four insulating films 112 do not function effectively (does not contribute to vibration; no potential difference is generated between both end faces (YZ end faces)), and therefore, according to other modes (third order mode, seventh order mode). Resonant vibration is not excited.

  Similarly, at the time of resonance in the seventh order mode shown in FIG. 7, the other end of the input switch SWin is connected to the terminal in7, the other end of the output switch SWout is connected to the terminal out7, and the other end of the voltage supply switch SWdc is a terminal. Connected to dc7. Thus, the input AC signal Sin is input to the block 111c in the conductor portion 111 via the input signal line Lin, the terminal in7, the support portion 13A, and the beam portion 12A. The DC voltage Vdc is supplied to the block 111d in the conductor portion 111 via the voltage supply line Ldc, the terminal dc7, the support portion 13B, and the beam portion 12B. For this reason, of the six insulating films 112, only two insulating films 112 positioned between the blocks 111c and 111d and between the blocks 111d and 111e function selectively and effectively (contribute to vibration; both end surfaces (Y A potential difference occurs between the −Z end faces). Accordingly, only the resonance vibration in the seventh-order mode is excited as shown by the waveform W7 in the figure, and the output AC signal Sout is output from the block 111e via the beam portion 12A, the support portion 13A, the terminal out7, and the output signal line Lout. Is output. The other four insulating films 112 do not function effectively (does not contribute to vibration; no potential difference is generated between both end faces (YZ end faces)), and therefore, according to other modes (third-order mode, fifth-order mode). Resonant vibration is not excited.

  As described above, in the resonator 1 according to the present embodiment, the input switch SWin, the output switch SWout, and the voltage supply switch SWdc are switched to perform input to the input block among the plurality of blocks 111a to 111g in the conductor portion 111. The input path for inputting the AC signal Sin and the output path for outputting the output AC signal Sout from the output block among these blocks 111a to 111g are individually switched. Accordingly, it is possible to switch the insulating film 112 that functions effectively (contributes to vibration; a potential difference is generated between both end faces (YZ end faces)), and in the vibration portion 11 of the insulating film 112 in which this potential difference occurs. Depending on the position at, a plurality of resonance frequencies fr (a plurality of order resonance modes) are excited. Further, since it is realized in a resonator having a single structure, there is no need to use a plurality of resonators individually as in the prior art.

  As described above, in the present embodiment, in the vibration unit 11 that performs resonance vibration by longitudinal wave vibration according to the frequency of the input AC signal Sin, input terminals to which the input AC signal Sin is input are a plurality of terminals in3, in5. By switching between in7, the input path of the input AC signal Sin to the block in the conductor 111 is switched, and the output terminal from which the output AC signal Sout is output is switched between the plurality of terminals out3, out5, and out7. Since the output path of the output AC signal Sout from the block in the unit 111 is switched, the vibrating unit 11 of the insulating film 112 in which a potential difference is generated between both end surfaces (YZ end surfaces) in the resonator 1 having a single structure. A plurality of resonance frequencies fr can be excited in accordance with the position inside. Therefore, a resonator having a plurality of resonance frequencies fr can be made smaller than before.

  Further, a DC voltage Vdc for applying a potential difference between both end faces (YZ end faces) of each insulating film 112 is supplied from the voltage supply line Ldc through the support portion 13B and the beam portion 12B. Since it is supplied to the block, it is not necessary to separately provide a dedicated electrode or the like for inputting the DC voltage Vdc, and the structure can be simplified.

<2. Modification>
FIG. 8A schematically shows a top surface configuration (XY plane configuration) of a resonator 1A according to a modification of the present invention, and FIG. 8B is realized in this resonator 1A. It shows waveforms of a plurality of possible (here, three) resonance modes (here, third, fifth, and seventh modes). In addition, about the component similar to the said embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted suitably. Further, the manufacturing method of the resonator 1A of the present modification is basically the same as the manufacturing method described in the above embodiment, and the difference is only that the mask pattern is different.

  In the resonator 1A of this modification, the input block, the output block, and the voltage in the conductor 111 corresponding to a plurality of resonance modes (third order, fifth order, and seventh order mode) in the resonator 1 of the above embodiment. The arrangement relationship (assignment) between supply blocks is changed.

  Specifically, at the time of resonance in the tertiary mode, the input AC signal Sin is input to the block 111c in the conductor portion 111 via the input signal line Lin, the terminal in3, the support portion 13A, and the beam portion 12A. The DC voltage Vdc is supplied to the block 111d in the conductor portion 111 via the voltage supply line Ldc, the terminal dc3, the support portion 13B, and the beam portion 12B. For this reason, of the six insulating films 112, only two insulating films 112 positioned between the blocks 111c and 111d and between the blocks 111d and 111e function selectively and effectively (contribute to vibration; both end surfaces (Y A potential difference occurs between the −Z end faces). Therefore, as shown by the waveform W3 in FIG. 8B, only the resonance vibration in the third mode is excited, and the block 111e passes through the beam portion 12A, the support portion 13A, the terminal out3, and the output signal line Lout. An output AC signal Sout is output. The other four insulating films 112 do not function effectively (does not contribute to vibration; no potential difference is generated between both end faces (YZ end faces)), and therefore other modes (5th mode, 7th mode). Resonant vibration is not excited.

  At the time of resonance in the fifth-order mode, the input AC signal Sin is input to the block 111b in the conductor portion 111 via the input signal line Lin, the terminal in5, the support portion 13A, and the beam portion 12A. The DC voltage Vdc is supplied to the blocks 111c and 11e in the conductor portion 111 via the voltage supply line Ldc, the terminal dc5, the support portion 13B, and the beam portion 12B, respectively. Therefore, of the six insulating films 112, only two insulating films 112 positioned between the blocks 111b and 111c and between the blocks 111e and 111f function selectively and effectively (contribute to vibration; both end surfaces (Y A potential difference occurs between the −Z end faces). Therefore, as shown by the waveform W5 in FIG. 8B, only the resonance vibration in the fifth mode is excited, and from the block 111f through the beam portion 12A, the support portion 13A, the terminal out5, and the output signal line Lout, An output AC signal Sout is output. The other four insulating films 112 do not function effectively (does not contribute to vibration; no potential difference is generated between both end faces (YZ end faces)), and therefore, according to other modes (third order mode, seventh order mode). Resonant vibration is not excited.

  Similarly, at the time of resonance in the seventh-order mode, the input AC signal Sin is input to the block 111a in the conductor portion 111 via the input signal line Lin, the terminal in7, the support portion 13A, and the beam portion 12A. The DC voltage Vdc is supplied to the blocks 111b and 111f in the conductor portion 111 via the voltage supply line Ldc, the terminal dc7, the support portion 13B, and the beam portion 12B, respectively. Therefore, of the six insulating films 112, only two insulating films 112 positioned between the blocks 111a and 111b and between the blocks 111f and 111g function selectively and effectively (contribute to vibration; both end surfaces (Y A potential difference occurs between the −Z end faces). Therefore, as in the waveform W7 shown in FIG. 8B, only the resonance vibration by the seventh mode is excited, and from the block 111g via the beam portion 12A, the support portion 13A, the terminal out7, and the output signal line Lout, An output AC signal Sout is output. The other four insulating films 112 do not function effectively (does not contribute to vibration; no potential difference is generated between both end faces (YZ end faces)), and therefore, according to other modes (third-order mode, fifth-order mode). Resonant vibration is not excited.

  With this configuration, also in this modification, the same effect can be obtained by the same operation as in the above embodiment. In other words, the resonator having a plurality of resonance frequencies fr can be made smaller than before.

<3. Application example>
FIG. 9 illustrates a functional block configuration of a communication apparatus as an example of an electronic device on which the resonators 1 and 1A described in the above embodiments and modifications are mounted. This communication apparatus includes the resonators 1 and 1A described in the above-described embodiments and the like, an oscillator such as a transmission PLL circuit 313, a channel selection PLL circuit 342, or an intermediate frequency PLL circuit 344, which will be described later, and a high-frequency filter 302. Etc. are mounted as filter elements. Specifically, this communication device is, for example, a mobile phone, a personal digital assistant (PDA), a wireless LAN device, or the like.

  This communication apparatus includes, for example, a transmission system circuit 300A, a reception system circuit 300B, a transmission / reception switch 301 that switches transmission / reception paths, a high-frequency filter 302, and a transmission / reception antenna 303.

  The transmission system circuit 300A includes two digital / analog converters (DACs) 311I and 311Q and two band-pass filters 312I and 312Q. The DACs 311I and 311Q and the bandpass filters 312I and 312Q correspond to I-channel transmission data and Q-channel transmission data. The transmission system circuit 300 </ b> A also includes a modulator 320, a transmission PLL (Phase-Locked Loop) circuit 313, and a power amplifier 314. The modulator 320 includes two buffer amplifiers 321I and 321Q and two mixers 322I and 322Q corresponding to the two bandpass filters 312I and 312Q, a phase shifter 323, an adder 324, and a buffer amplifier 325. It is configured to include.

  The reception system circuit 300B includes a high frequency unit 330, a band pass filter 341, a channel selection PLL circuit 342, an intermediate frequency circuit 350, a band pass filter 343, a demodulator 360, and an intermediate frequency PLL circuit 344. The reception system circuit 300B also includes two band pass filters 345I and 345Q and two analog / digital converters (ADC) 346I and 346Q corresponding to the reception data of the I channel and the reception data of the Q channel. I have. The high frequency unit 330 includes a low noise amplifier 331, buffer amplifiers 332 and 334, and a mixer 333. The intermediate frequency circuit 350 includes buffer amplifiers 351 and 353 and an automatic gain adjustment (AGC; Auto Gain Controller) circuit 352. The demodulator 360 includes a buffer amplifier 361, two mixers 362I and 362Q corresponding to the two band-pass filters 345I and 345Q, two buffer amplifiers 363I and 363Q, and a phase shifter 364. Yes.

  In this communication apparatus, when I-channel transmission data and Q-channel transmission data are input to the transmission system circuit 300A, each transmission data is processed in the following procedure. That is, first, analog signals are converted by the DACs 311I and 311Q, signal components other than the band of the transmission signal are subsequently removed by the bandpass filters 312I and 312Q, and then supplied to the modulator 320. Subsequently, the modulator 320 supplies the signals to the mixers 322I and 322Q via the buffer amplifiers 321I and 321Q, and then mixes and modulates the frequency signal corresponding to the transmission frequency supplied from the transmission PLL circuit 313. After that, both mixed signals are added by an adder 324 to obtain a single transmission signal. At this time, with respect to the frequency signal supplied to the mixer 322I, the phase shifter 323 shifts the signal phase by 90 ° so that the I channel signal and the Q channel signal are orthogonally modulated. Finally, the signal is supplied to the power amplifier 314 via the buffer amplifier 325 to be amplified so as to have a predetermined transmission power. The signal amplified in the power amplifier 314 is supplied to the antenna 303 via the transmission / reception switch 301 and the high frequency filter 302, so that it is wirelessly transmitted via the antenna 303. The high-frequency filter 302 functions as a band-pass filter that removes signal components other than the frequency band of signals transmitted or received in the communication device.

  On the other hand, when a signal is received from the antenna 303 via the high frequency filter 302 and the transmission / reception switch 301 to the reception system circuit 300B, the signal is processed in the following procedure. That is, first, in the high frequency unit 330, the received signal is amplified by the low noise amplifier 331, and subsequently, signal components other than the received frequency band are removed by the band pass filter 341, and then supplied to the mixer 333 via the buffer amplifier 332. Subsequently, the frequency signals supplied from the channel selection PPL circuit 342 are mixed, and a signal of a predetermined transmission channel is used as an intermediate frequency signal, which is supplied to the intermediate frequency circuit 350 via the buffer amplifier 334. Subsequently, the intermediate frequency circuit 350 removes signal components other than the band of the intermediate frequency signal by supplying the band pass filter 343 via the buffer amplifier 351. Subsequently, the AGC circuit 352 makes a substantially constant gain signal, and then supplies the signal to the demodulator 360 via the buffer amplifier 353. Subsequently, in the demodulator 360, the frequency signals supplied from the intermediate frequency PPL circuit 344 are mixed after being supplied to the mixers 362I and 362Q via the buffer amplifier 361, and the I-channel signal component and the Q-channel signal component are mixed. And demodulate. At this time, with respect to the frequency signal supplied to the mixer 362I, the phase shifter 364 shifts the signal phase by 90 ° to demodulate the I-channel signal component and the Q-channel signal component that are orthogonally modulated with each other. Finally, the I channel signal and the Q channel signal are supplied to the bandpass filters 345I and 345Q to remove signal components other than the I channel signal and the Q channel signal, and then supplied to the ADCs 346I and 346Q to be digital. Data. Thereby, I-channel received data and Q-channel received data are obtained.

  In this communication apparatus, the resonator described in each of the above embodiments is used as an oscillator such as a transmission PLL circuit 313, a channel selection PLL circuit 342, or an intermediate frequency PLL circuit 344, or a filter element such as a high frequency filter 302. It is installed. For this reason, it has the excellent high frequency characteristic by the effect | action demonstrated in the said embodiment etc.

(Other variations)
Although the present invention has been described with the embodiment, the modification, and the application example, the present invention is not limited to the embodiment and the like, and various modifications are possible.

  For example, in the above-described embodiment, the case where the conductor portion 111 is separated into seven blocks by providing the six insulating films 112 in the vibration portions 11 and 11A has been described. The number of insulating films 112 provided is not limited to this. In other words, it is sufficient that two or more insulating films 112 are provided in the vibrating portion, and the number thereof can be set arbitrarily.

  In the above-described embodiment, etc., a resonator including a vibration unit that performs resonance vibration by longitudinal wave vibration according to the frequency of the input AC signal has been described as an example, but the present invention is of other types. The present invention can also be applied to a resonator (for example, one having a vibration part that performs resonance vibration by transverse wave vibration).

  Further, the material and thickness of each layer described in the above embodiments and the like, or the film formation method and film formation conditions are not limited, and other materials and thicknesses may be used, or other film formation methods and film formation may be used. It is good also as film | membrane conditions.

  In addition, in the above-described embodiment and the like, the case where the resonator of the present invention is applied to an electronic device typified by a communication device has been described. However, the present invention is not limited to this, and the resonator of the present invention is not limited to communication. It is also possible to apply to electronic equipment other than the apparatus (for example, a measuring instrument). In any of these cases, the same effects as those of the above-described embodiment and the like can be obtained.

  DESCRIPTION OF SYMBOLS 1,1A ... Resonator, 10 ... Support substrate, 10A ... Si substrate, 10B ... Protective layer, 11, 11A ... Vibrating part, 111 ... Conductor part, 111a-111g ... (conductor part) block, 112 ... Insulating film, 12A, 12B ... Beam part, 13A, 13B ... Supporting part, 15, 16, 18 ... p-Si layer, 17 ... Insulating layer, 20 ... Sacrificial layer, 21 ... Opening, 300A ... Transmission system circuit, 300B ... Reception system circuit , 302 ... high frequency filter, 313 ... PLL circuit for transmission, 342 ... PLL circuit for channel selection, 344 ... PLL circuit for intermediate frequency, G ... gap, Vdc ... DC power supply, C1 ... capacitor, L1 ... coil, Lin ... input signal Line, Lout ... output signal line, Ldc ... voltage supply line, Sin ... input AC signal, Sout ... output AC signal, SWin ... input switch, SWout ... output switch, SWdc ... voltage supply switch, in 3, in5, in7, out3, out5, out7, dc3, dc5, dc7 ... terminal, W3, W5, W7 ... waveform, P1 ... vibration direction, fr ... resonance frequency.

Claims (13)

A vibrating portion having a conductor portion and a plurality of insulating portions provided to electrically separate the conductor portion into a plurality of blocks;
A plurality of input terminals for inputting an input AC signal to the block in the conductor portion;
A plurality of output terminals for outputting an output AC signal from the block in the conductor portion;
In the plurality of input terminals, an input switching unit that switches an input path by switching an input terminal to which the input AC signal is input; and
A resonator comprising: an output switching unit that switches an output path by switching an output terminal from which the output AC signal is output among the plurality of output terminals. The resonance according to claim 1, wherein the vibration unit is configured to perform resonance vibration by longitudinal wave vibration according to a frequency of the input AC signal when a potential difference is generated between both ends in the insulating unit. vessel. A plurality of blocks in the conductor portion,
An input block to which the input AC signal is input;
An output block for outputting the output AC signal;
The resonator according to claim 2, comprising: a voltage supply block to which a DC voltage for generating the potential difference is supplied. A plurality of voltage supply terminals for supplying the DC voltage to the voltage supply block;
A voltage supply switching unit that switches a voltage supply path by switching the voltage supply terminal to which the DC voltage is supplied in the plurality of voltage supply terminals;
The input switching unit, the output switching unit, and the voltage supply switching unit are configured to individually switch the input path, the output path, and the voltage supply path, respectively, so that the input block, the output block, and the The resonator according to claim 3, wherein each of the voltage supply blocks is switched. The resonator according to any one of claims 2 to 4, wherein the switching unit performs a switching operation according to which of resonance vibrations in a plurality of resonance modes is used. A substrate,
The resonator according to claim 1, further comprising: a support portion that supports the vibration portion with respect to one surface of the substrate via a gap. The vibration part is configured to perform resonance vibration by longitudinal wave vibration according to the frequency of the input AC signal when a potential difference is generated between both ends in the insulating part,
The resonator according to claim 6, wherein the support portion is disposed at or near a position corresponding to at least one of the node portions in the longitudinal wave vibration. The vibration part is configured to perform resonance vibration by longitudinal wave vibration according to the frequency of the input AC signal when a potential difference is generated between both ends in the insulating part,
The resonator according to claim 1, wherein the insulating portion is disposed at a position corresponding to at least one of node portions in the longitudinal wave vibration or in the vicinity thereof. The resonator according to claim 1, wherein the conductor portion is separated into the plurality of blocks along a transmission direction of an AC signal. Forming a vibrating portion on a substrate having a conductor portion and a plurality of insulating portions that electrically separate the conductor portion into a plurality of blocks;
A plurality of input terminals for inputting an input AC signal to the block in the conductor part, a plurality of output terminals for outputting an output AC signal from the block in the conductor part, and the input at the plurality of input terminals An input switching unit that switches an input path by switching an input terminal to which an AC signal is input, and an output switching unit that switches an output path by switching an output terminal to which the output AC signal is output among the plurality of output terminals. A method for manufacturing a resonator, comprising: forming each of the steps. The step of forming the vibration part includes
Forming a conductor pattern layer having a conductor pattern on the substrate;
Forming an insulating layer on the surface and side surfaces of the conductor pattern;
Forming a conductor layer on the insulating layer;
The method of manufacturing a resonator according to claim 10, further comprising: forming the conductor portion and the insulating portion by flattening surfaces of the conductor pattern layer, the insulating layer, and the conductor layer. It has a resonator that performs resonant vibration,
The resonator is
A vibrating portion having a conductor portion and a plurality of insulating portions provided to electrically separate the conductor portion into a plurality of blocks;
A plurality of input terminals for inputting an input AC signal to the block in the conductor portion;
A plurality of output terminals for outputting an output AC signal from the block in the conductor portion;
In the plurality of input terminals, an input switching unit that switches an input path by switching an input terminal to which the input AC signal is input; and
An oscillator comprising: an output switching unit that switches an output path by switching an output terminal that outputs the output AC signal among the plurality of output terminals. It has a resonator that performs resonant vibration,
The resonator is
A vibrating portion having a conductor portion and a plurality of insulating portions provided to electrically separate the conductor portion into a plurality of blocks;
A plurality of input terminals for inputting an input AC signal to the block in the conductor portion;
A plurality of output terminals for outputting an output AC signal from the block in the conductor portion;
In the plurality of input terminals, an input switching unit that switches an input path by switching an input terminal to which the input AC signal is input; and
An electronic device comprising: an output switching unit that switches an output path by switching an output terminal from which the output AC signal is output at the plurality of output terminals.

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