TWI395308B - Fabrication method of package substrate - Google Patents
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- TWI395308B TWI395308B TW97134805A TW97134805A TWI395308B TW I395308 B TWI395308 B TW I395308B TW 97134805 A TW97134805 A TW 97134805A TW 97134805 A TW97134805 A TW 97134805A TW I395308 B TWI395308 B TW I395308B
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Description
本發明係有關於一種封裝基板之製法,尤指一種線路埋入基板中之封裝基板之製法。The invention relates to a method for manufacturing a package substrate, in particular to a method for manufacturing a package substrate in which a circuit is buried in a substrate.
隨著電子產業的蓬勃發展,電子產品亦逐漸邁入多功能、高性能的研發趨勢。為滿足半導體封裝件高積集度(Integration)及微型化(Miniaturization)的封裝需求,以供更多主被動元件及線路載接,半導體封裝基板亦逐漸由雙層封裝基板演變成多層封裝基板(Multi-layer board),俾在有限的空間下運用層間連接技術(Interlayer connection)以擴大半導體封裝基板上可供利用的線路佈局面積,藉此配合高線路密度之積體電路(Integrated circuit)需要,降低封裝基板的厚度,以在相同基板單位面積下容納更多數量的線路及電子元件。With the rapid development of the electronics industry, electronic products have gradually entered the trend of multi-functional, high-performance research and development. In order to meet the packaging requirements of semiconductor package high integration and miniaturization for more active and passive components and line loading, the semiconductor package substrate has gradually evolved from a two-layer package substrate into a multi-layer package substrate ( Multi-layer board), which uses Interlayer connection to expand the layout area available on the semiconductor package substrate in a limited space, thereby cooperating with the high circuit density integrated circuit. The thickness of the package substrate is reduced to accommodate a greater number of lines and electronic components at the same substrate unit area.
又為因應微處理器、晶片組、繪圖晶片與特殊應用積體電路(ASIC)等高效能晶片之運算需要,佈有導線之半導體封裝基板亦需提昇其傳遞晶片訊號、改善頻寬、控制阻抗等功能,以因應高I/O數封裝件的發展。然而,為符合半導體封裝件輕薄短小、多功能、高速度、高線路密度及高頻化的開發方向,封裝基板已朝向細線路及小孔徑發展。現有半導體封裝基板製程從傳統100微米之線路尺寸,已縮減至現在的30微米以下,其中,包括導線寬度(Line width)及線路間距(Space)等持續朝向更小的線路 精度進行研發。In order to meet the computing needs of high-performance chips such as microprocessors, chipsets, graphics chips, and special application integrated circuits (ASICs), semiconductor package substrates with wires also need to improve their transfer of chip signals, improve bandwidth, and control impedance. Other features to accommodate the development of high I/O number packages. However, in order to meet the development direction of semiconductor packages, such as thinness, shortness, versatility, high speed, high line density, and high frequency, the package substrate has been developed toward fine lines and small apertures. The existing semiconductor package substrate process has been reduced from the conventional 100 micron line size to the current 30 micron or less, including line width and line spacing, which continue to face smaller lines. Precision is developed.
因此,為提高半導體封裝基板之佈線精密度,業界發展出一種增層技術(Build-up),亦即在一核心封裝基板(Core circuit board)表面利用電路增層技術交互堆疊多層介電層及線路層,並於該介電層中開設導電盲孔(Conductive via)以供上、下層線路之間電性連接;其中,電路增層製程係影響半導體封裝基板線路密度的關鍵,依照現行技術,業者多以半加成法(Semi-additive process,SAP)來製作線路增層,且在不斷朝更高精度、細線路的需求上,業界更發展出嵌埋線路之方法。Therefore, in order to improve the wiring precision of the semiconductor package substrate, the industry has developed a build-up technology, that is, a multilayer dielectric layer is alternately stacked on the surface of a core circuit board by a circuit build-up technology. a circuit layer, and a conductive via is provided in the dielectric layer for electrically connecting the upper and lower layers; wherein the circuit build-up process is the key to affecting the circuit density of the semiconductor package substrate, according to the current technology, The industry mostly uses the semi-additive process (SAP) to make the line build-up, and the industry has developed a method of embedding the line in the demand for higher precision and fine lines.
請參閱第1A至1G圖,係為習知之封裝基板之製法示意圖;如第1A圖所示,提供一核心板10,其至少一表面具有複數導電跡線102及電性連接墊101;如第1B圖所示,於該核心板10、導電跡線102及電性連接墊101上形成第一介電層11;如第1C圖所示,於該第一介電層11上形成複數開槽111及於各該開槽111中之第一介電層上形成盲孔110,係對應露出該複數電性連接墊101;如第1D圖所示,於該第一介電層11、開槽111之側壁、盲孔110之孔壁及電性連接墊101上形成有導電層13;如第1E圖所示,於該導電層13上電鍍形成有金屬層14,該金屬層14係填入盲孔110中以形成第一導電盲孔141;如第1F圖所示,將金屬層14進行薄化製程以形成第一線路層142;如第1G圖所示,於該第一介電層11及第一線路層142上形成有增層結構16,該增層結構16係包括至少 一第二介電層160、設於該第二介電層160中之第二線路層162、以及複數設於該第二介電層160中並電性連接該第一線路層142及第二線路層162之第二導電盲孔161,該增層結構16最外面之線路具有複數電性接觸墊163,之後於該增層結構16之表面上形成有防焊層17,且該防焊層17中形成有複數防焊層開孔170,以對應外露各該電性接觸墊163。1A to 1G, which are schematic diagrams of a conventional package substrate; as shown in FIG. 1A, a core board 10 is provided, at least one surface having a plurality of conductive traces 102 and an electrical connection pad 101; As shown in FIG. 1B, a first dielectric layer 11 is formed on the core board 10, the conductive traces 102, and the electrical connection pads 101; as shown in FIG. 1C, a plurality of slots are formed on the first dielectric layer 11. Forming a blind via 110 in the first dielectric layer of each of the trenches 111, correspondingly exposing the plurality of electrical connection pads 101; as shown in FIG. 1D, the first dielectric layer 11 is slotted A conductive layer 13 is formed on the sidewall of the 111, the hole wall of the blind via 110, and the electrical connection pad 101. As shown in FIG. 1E, a metal layer 14 is formed on the conductive layer 13, and the metal layer 14 is filled. a first conductive via 141 is formed in the blind via 110; as shown in FIG. 1F, the metal layer 14 is thinned to form a first wiring layer 142; as shown in FIG. 1G, the first dielectric layer is formed 11 and the first circuit layer 142 are formed with a build-up structure 16 including at least a second dielectric layer 160, a second circuit layer 162 disposed in the second dielectric layer 160, and a plurality of the second dielectric layer 160 and electrically connected to the first circuit layer 142 and the second a second conductive via 161 of the circuit layer 162, the outermost line of the build-up structure 16 has a plurality of electrical contact pads 163, and then a solder resist layer 17 is formed on the surface of the build-up structure 16, and the solder resist layer A plurality of solder mask openings 170 are formed in the 17 to correspondingly expose the respective electrical contact pads 163.
由上可知,習知之封裝基板之製法中,係直接於介電層上形成開槽及盲孔,過程中產生的揮發物容易飛濺並殘留在介電層表面,不易清除;又導電層去除時容易有鈀(Pd殘留在介電層上,需做特殊的除鈀處理,以免殘鈀導致銅遷移造成短路;此外,介電層在基板製造過程中容易遭到表面刮傷受損等問題。It can be seen from the above that in the conventional method for manufacturing a package substrate, a groove and a blind hole are formed directly on the dielectric layer, and volatile matter generated in the process is easily splashed and remains on the surface of the dielectric layer, which is difficult to remove; and when the conductive layer is removed It is easy to have palladium (Pd remains on the dielectric layer, and special palladium treatment is required to prevent the palladium from causing copper migration to cause short circuit; in addition, the dielectric layer is susceptible to surface scratch damage during substrate manufacturing.
因此,鑒於上述之問題,如何避免習知技術中介電層之表面容易殘留揮發物或鈀,與避免介電層之表面容易受損等問題,實已成為目前亟欲解決之課題。Therefore, in view of the above problems, it has become a problem to be solved at present to avoid the problem that the surface of the conventional dielectric layer is likely to remain volatile or palladium, and the surface of the dielectric layer is easily damaged.
鑒於上述習知技術之缺失,本發明之主要目的係提供一種封裝基板之製法,得以避免習知技術中介電層之表面容易殘留揮發物或導電層,與避免介電層之表面容易受損等問題。In view of the above-mentioned shortcomings of the prior art, the main object of the present invention is to provide a method for fabricating a package substrate, so as to avoid easy residual volatiles or conductive layers on the surface of the dielectric layer of the prior art, and to avoid damage to the surface of the dielectric layer. problem.
為達上述目的,本發明揭露一種封裝基板之製法,係包括:提供一核心板,其至少一表面具有複數導電跡線及電性連接墊;於該核心板、導電跡線及電性連接墊上形成 第一介電層;於該第一介電層上形成離型層;於該離型層上形成有複數圖案化開口區;於對應各該圖案化開口區中之第一介電層上形成開槽,並於部份該開槽中形成複數盲孔,以對應露出各該電性連接墊;於各該開槽中形成有第一線路層,並於該盲孔中形成有第一導電盲孔,以電性連接各該電性連接墊及第一線路層;以及移除該離型層。To achieve the above object, the present invention provides a method for manufacturing a package substrate, comprising: providing a core board having at least one surface having a plurality of conductive traces and electrical connection pads; and the core board, the conductive traces, and the electrical connection pads form a first dielectric layer; a release layer is formed on the first dielectric layer; a plurality of patterned opening regions are formed on the release layer; and formed on the first dielectric layer corresponding to each of the patterned opening regions Slotting, and forming a plurality of blind holes in a portion of the slots to respectively expose the electrical connection pads; forming a first circuit layer in each of the slots, and forming a first conductive layer in the blind holes a blind hole electrically connecting each of the electrical connection pads and the first circuit layer; and removing the release layer.
依上述之封裝基板之製法,其中,該第一線路層之製法,係包括:於該離型層、圖案化開口區及所對應之開槽表面、盲孔之孔壁、及盲孔所顯露之電性連接墊上形成有導電層;於該導電層上形成有金屬層,且該金屬層填充於各該開槽及盲孔中;以及進行薄化製程以移除形成於該離型層上之金屬層,從而於該盲孔中形成該第一導電盲孔,且於該開槽中形成該第一線路層。According to the above method for manufacturing a package substrate, the method for manufacturing the first circuit layer comprises: exposing the release layer, the patterned opening region and the corresponding grooved surface, the hole wall of the blind hole, and the blind hole; a conductive layer is formed on the electrical connection pad; a metal layer is formed on the conductive layer, and the metal layer is filled in each of the slots and the blind holes; and a thinning process is performed to remove the formed on the release layer a metal layer to form the first conductive blind via in the blind via, and the first trace layer is formed in the trench.
依上述之封裝基板之製法,復包括於該第一介電層及第一線路層上形成有增層結構,該增層結構係包括至少一第二介電層、設於該第二介電層上之第二線路層、以及複數設於該第二介電層中並電性連接該第一及第二線路層之第二導電盲孔,且該增層結構之最外面之第二線路層具有複數電性接觸墊,復包括於該增層結構最外面上形成有防焊層,且該防焊層形成有複數防焊層開孔,以對應外露各該電性接觸墊。According to the above method for manufacturing a package substrate, a build-up structure is formed on the first dielectric layer and the first circuit layer, and the build-up structure includes at least one second dielectric layer disposed on the second dielectric a second circuit layer on the layer, and a plurality of second conductive blind holes disposed in the second dielectric layer and electrically connected to the first and second circuit layers, and an outermost second line of the build-up structure The layer has a plurality of electrical contact pads, and a solder resist layer is formed on the outermost surface of the buildup structure, and the solder resist layer is formed with a plurality of solder mask openings to correspondingly expose the respective electrical contact pads.
依上述之製法,其中,該離型層係為金屬材質,且係以物理沉積或化學沉積方式形成,移除該離型層之方式係為化學蝕刻;或該離型層係為聚合物薄膜,且係以貼合或 塗佈方式形成,移除該離型層之方式係為物理撕去。According to the above method, wherein the release layer is made of a metal material and formed by physical deposition or chemical deposition, and the release layer is removed by chemical etching; or the release layer is a polymer film. And to fit or The coating method is formed, and the release layer is removed by physical peeling.
依上所述,該圖案化開口區及開槽之製法係為雷射燒融(laser ablation);該盲孔之製法係為雷射燒融。According to the above, the patterning opening area and the groove forming method are laser ablation; the blind hole is manufactured by laser burning.
本發明揭露另一種封裝基板之製法,係包括:提供一核心板;於該核心板上形成第一介電層;於該第一介電層上形成離型層;於該離型層上形成有複數圖案化開口區;於對應各該圖案化開口區中之第一介電層上形成開槽;於各該開槽中形成有第一線路層,係具有複數導電跡線及電性連接墊;以及移除該離型層。The invention discloses a method for fabricating another package substrate, comprising: providing a core plate; forming a first dielectric layer on the core plate; forming a release layer on the first dielectric layer; forming on the release layer a plurality of patterned opening regions; forming a groove on the first dielectric layer corresponding to each of the patterned opening regions; forming a first circuit layer in each of the grooves, having a plurality of conductive traces and electrical connections a mat; and removing the release layer.
依上述之封裝基板之製法,其中,該第一線路層之製法,係包括:於該離型層、圖案化開口區及所對應之開槽表面上形成有導電層;於該導電層上形成有金屬層,且該金屬層填充於各該開槽中;以及進行薄化製程以移除形成於該離型層上之金屬層,從而於該開槽中形成該第一線路層。According to the above method for manufacturing a package substrate, the first circuit layer is formed by: forming a conductive layer on the release layer, the patterned opening region and the corresponding grooved surface; forming on the conductive layer a metal layer is filled, and the metal layer is filled in each of the grooves; and a thinning process is performed to remove the metal layer formed on the release layer, thereby forming the first wiring layer in the groove.
依上述之製法,復包括於該第一介電層及第一線路層上形成增層結構,係包括至少一第二介電層、設於該第二介電層上之第二線路層、以及複數設於該第二介電層中並電性連接該電性連接墊及第二線路層之第二導電盲孔,且該增層結構最外面之第二線路層具有複數電性接觸墊,復包括於該增層結構最外面上形成有防焊層,且該防焊層具有複數防焊層開孔,以對應外露該電性接觸墊。According to the above method, a build-up structure is formed on the first dielectric layer and the first circuit layer, and includes at least a second dielectric layer, a second circuit layer disposed on the second dielectric layer, And a plurality of second conductive blind vias disposed in the second dielectric layer and electrically connected to the electrical connection pads and the second circuit layer, and the outermost second circuit layer of the buildup structure has a plurality of electrical contact pads And a solder resist layer is formed on the outermost surface of the build-up structure, and the solder resist layer has a plurality of solder mask openings to correspondingly expose the electrical contact pads.
又依上述之製法,該離型層係為金屬材質,且係以物理沉積或化學沉積方式形成,移除該離型層之方式係為化 學蝕刻;或該離型層係為聚合物薄膜,且係以貼合或塗佈方式形成,移除該離型層之方式係為物理撕去。According to the above method, the release layer is made of metal, and is formed by physical deposition or chemical deposition, and the method of removing the release layer is made. Etching; or the release layer is a polymer film, and is formed by lamination or coating, and the release layer is removed by physical tearing.
依上所述,該圖案化開口區及開槽之製法係為雷射燒融。According to the above, the patterning opening area and the groove forming method are laser burning.
相較於習知技術,本發明之封裝基板之製法,主要係於介電層上形成離型層,並於該介電層上的線路層形成後再將該離型層移除,如此,則可避免習知技術中介電層之表面容易殘留揮發物或鈀,與避免介電層之表面容易受損等問題。Compared with the prior art, the package substrate of the present invention is mainly formed by forming a release layer on the dielectric layer, and removing the release layer after forming the circuit layer on the dielectric layer. The problem that the surface of the dielectric layer of the prior art is likely to remain volatile or palladium is avoided, and the surface of the dielectric layer is easily damaged.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.
請參閱第2A至2H圖,係提供本發明之封裝基板之第一實施例之製法。Referring to Figures 2A through 2H, a method of fabricating the first embodiment of the package substrate of the present invention is provided.
如第2A圖所示,提供一核心板20,其至少一表面具有複數導電跡線202及電性連接墊201,該核心板20可具有連接兩對應表面導電跡線202之導電通孔(圖未示)。As shown in FIG. 2A, a core board 20 is provided, at least one surface having a plurality of conductive traces 202 and electrical connection pads 201, and the core board 20 may have conductive vias connecting the two corresponding surface conductive traces 202 (Fig. Not shown).
如第2B圖所示,於該核心板20、導電跡線202及電性連接墊201上形成第一介電層21。As shown in FIG. 2B, a first dielectric layer 21 is formed on the core board 20, the conductive traces 202, and the electrical connection pads 201.
如第2C圖所示,於該第一介電層21上形成離型層22。As shown in FIG. 2C, a release layer 22 is formed on the first dielectric layer 21.
如第2D圖所示,於該離型層22上形成有複數圖案化 開口區220,並於對應各該圖案化開口區220中之第一介電層21上形成開槽211,並於部份該開槽211中形成複數盲孔210,以對應露出各該電性連接墊201;本實施例中,該圖案化開口區220及開槽211之製法係為雷射燒融,又該盲孔210之製法係為雷射燒融。As shown in FIG. 2D, a plurality of patterns are formed on the release layer 22. a plurality of blind holes 211 are formed in the first dielectric layer 21 corresponding to each of the patterned opening regions 220, and a plurality of blind holes 210 are formed in the plurality of the openings 211 to correspondingly expose the electrical regions. In the embodiment, the patterning opening area 220 and the opening 211 are formed by laser burning, and the blind hole 210 is made by laser burning.
如第2E圖所示,於該離型層22、圖案化開口區220及所對應之開槽211表面、盲孔210之孔壁、及盲孔210所顯露之電性連接墊201上形成有導電層23。As shown in FIG. 2E, the surface of the release layer 22, the patterned opening region 220 and the corresponding slot 211, the hole wall of the blind hole 210, and the electrical connection pad 201 exposed by the blind hole 210 are formed. Conductive layer 23.
如第2F圖所示,於該導電層23上電鍍形成有金屬層24,且該金屬層24形成於各該開槽211及盲孔210中。As shown in FIG. 2F, a metal layer 24 is formed on the conductive layer 23, and the metal layer 24 is formed in each of the slits 211 and the blind holes 210.
如第2G圖所示,進行薄化製程以移除形成於該離型層22上之金屬層24,從而於該盲孔210中形成該第一導電盲孔241,且於該開槽211中形成該第一線路層242,並移除該離型層22;該離型層22係例如為金屬材質,且係以物理沉積或化學沉積方式形成,移除該離型層22之方式係為化學蝕刻;該離型層22係例如為聚合物薄膜,且係以貼合或塗佈方式形成,移除該離型層22之方式係為物理撕去。As shown in FIG. 2G, a thinning process is performed to remove the metal layer 24 formed on the release layer 22, thereby forming the first conductive via 241 in the blind via 210, and in the trench 211 Forming the first circuit layer 242 and removing the release layer 22; the release layer 22 is, for example, a metal material, and is formed by physical deposition or chemical deposition, and the release layer 22 is removed. Chemically etched; the release layer 22 is, for example, a polymeric film, and is formed by lamination or coating, and the release layer 22 is removed by physical tearing.
如第2H圖所示,於該第一介電層21及第一線路層242上形成有增層結構27,該增層結構27係包括至少一第二介電層270、設於該第二介電層270中之第二線路層272、以及複數設於該第二介電層270中並電性連接該第一線路層242及第二線路層272之第二導電盲孔271,該增層結構27最外面之第二線路層272具有複數電性接觸 墊273;此外,於該增層結構27最外面上形成有防焊層28,且該防焊層28形成有複數防焊層開孔280,以對應外露各該電性接觸墊273。As shown in FIG. 2H, a build-up structure 27 is formed on the first dielectric layer 21 and the first circuit layer 242. The build-up structure 27 includes at least one second dielectric layer 270 disposed on the second a second circuit layer 272 in the dielectric layer 270, and a plurality of second conductive vias 271 disposed in the second dielectric layer 270 and electrically connected to the first circuit layer 242 and the second circuit layer 272. The outermost second circuit layer 272 of the layer structure 27 has a plurality of electrical contacts The pad 273 is further formed with a solder resist layer 28 on the outermost surface of the build-up structure 27, and the solder resist layer 28 is formed with a plurality of solder resist openings 280 to correspondingly expose the respective electrical contact pads 273.
請參閱第3A至3H圖,係提供本發明之封裝基板之第二實施例之製法。Referring to Figures 3A through 3H, there is provided a method of fabricating a second embodiment of the package substrate of the present invention.
如第3A圖所示,提供一核心板20。As shown in FIG. 3A, a core board 20 is provided.
如第3B圖所示,於該核心板20上形成第一介電層21。As shown in FIG. 3B, a first dielectric layer 21 is formed on the core board 20.
如第3C圖所示,於該第一介電層21上形成離型層22。As shown in FIG. 3C, a release layer 22 is formed on the first dielectric layer 21.
如第3D圖所示,於該離型層22上形成有複數圖案化開口區220,並於對應各該圖案化開口區220中之第一介電層21上形成開槽211,本實施例中,該圖案化開口區220及開槽211之製法係為雷射燒融。As shown in FIG. 3D, a plurality of patterned opening regions 220 are formed on the release layer 22, and a slit 211 is formed on the first dielectric layer 21 corresponding to each of the patterned opening regions 220. The method for fabricating the patterned opening region 220 and the slit 211 is laser ablation.
如第3E圖所示,於該離型層22、圖案化開口區220及所對應之開槽211表面上形成有導電層23。As shown in FIG. 3E, a conductive layer 23 is formed on the surface of the release layer 22, the patterned opening region 220, and the corresponding groove 211.
如第3F圖所示,於該導電層23上電鍍形成有金屬層24,且該金屬層24填充於各該開槽211中。As shown in FIG. 3F, a metal layer 24 is formed on the conductive layer 23, and the metal layer 24 is filled in each of the slits 211.
如第3G圖所示,進行薄化製程以移除形成於該離型層22上之金屬層24,從而於該開槽211中形成該第一線路層242,係具有複數導電跡線242a及電性連接墊242b,並移除該離型層22。As shown in FIG. 3G, a thinning process is performed to remove the metal layer 24 formed on the release layer 22, thereby forming the first wiring layer 242 in the trench 211, having a plurality of conductive traces 242a and The pad 242b is electrically connected and the release layer 22 is removed.
如第3H圖所示,於該第一介電層21及第一線路層 242上形成有增層結構27,該增層結構27係包括至少一第二介電層270、設於該第二介電層270中之第二線路層272、以及複數設於該第二介電層270中並電性連接該第一線路層242之電性連接墊242b及第二線路層272之第二導電盲孔271,且該增層結構27最外面之第二線路層272具複數電性接觸墊273,此外,於該增層結構27最外面上形成有防焊層28,且該防焊層28形成有複數防焊層開孔280,以對應外露各該電性接觸墊273。As shown in FIG. 3H, the first dielectric layer 21 and the first circuit layer A build-up structure 27 is formed on the 242, the build-up structure 27 includes at least a second dielectric layer 270, a second circuit layer 272 disposed in the second dielectric layer 270, and a plurality of second dielectric layers The electrical layer 270 is electrically connected to the electrical connection pad 242b of the first circuit layer 242 and the second conductive via 271 of the second circuit layer 272, and the outermost second circuit layer 272 of the buildup structure 27 has a plurality of The electrical contact pad 273 is further provided with a solder resist layer 28 on the outermost surface of the build-up structure 27, and the solder resist layer 28 is formed with a plurality of solder resist openings 280 to correspondingly expose the respective electrical contact pads 273. .
前述實施例中,可於形成增層結構27前先形成貫穿核心板及形成於其兩相對表面之第一介電層21之導電通孔(圖未示),以連接兩側之線路。In the foregoing embodiment, conductive vias (not shown) penetrating through the core plate and the first dielectric layer 21 formed on the opposite surfaces thereof may be formed before the formation of the build-up structure 27 to connect the lines on both sides.
因此,本發明之封裝基板之製法,主要係於介電層上形成離型層,並於該介電層上的線路層形成後再將該離型層移除,如此,則可避免習知技術中介電層之表面容易殘留揮發物或導電層,與避免介電層之表面容易受損等問題。Therefore, the method for fabricating the package substrate of the present invention is mainly to form a release layer on the dielectric layer, and to remove the release layer after the formation of the circuit layer on the dielectric layer, so that conventional methods can be avoided. The surface of the technical intermediate layer is prone to residual volatiles or conductive layers, and the surface of the dielectric layer is easily damaged.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
10,20‧‧‧核心板10,20‧‧‧ core board
101,201‧‧‧電性連接墊101,201‧‧‧Electrical connection pads
102,202‧‧‧導電跡線102,202‧‧‧ conductive traces
11,21‧‧‧第一介電層11,21‧‧‧First dielectric layer
22‧‧‧離型層22‧‧‧ release layer
110,210‧‧‧盲孔110,210‧‧‧blind hole
111,211‧‧‧開槽111,211‧‧‧ slotting
13,23‧‧‧導電層13,23‧‧‧ Conductive layer
14,24‧‧‧金屬層14,24‧‧‧metal layer
141,241‧‧‧第一導電盲孔141,241‧‧‧First conductive blind hole
142,242‧‧‧第一線路層142, 242‧‧‧ first line layer
16,27‧‧‧增層結構16,27‧‧‧Additional structure
160,270‧‧‧第二介電層160, 270‧‧‧ second dielectric layer
162,272‧‧‧第二線路層162,272‧‧‧second circuit layer
161,271‧‧‧第二導電盲孔161,271‧‧‧Second conductive blind hole
163,273‧‧‧電性接觸墊163,273‧‧‧Electrical contact pads
17,28‧‧‧防焊層17,28‧‧‧ solder mask
170,280‧‧‧防焊層開孔170,280‧‧‧ solder mask opening
220‧‧‧圖案化開口區220‧‧‧ patterned open area
第1A至1G圖係為習知之封裝基板之製法之剖視示意圖; 第2A至2H圖係為本發明之封裝基板之第一實施例之製法之剖視示意圖;以及第3A至3H圖係為本發明之封裝基板之第二實施例之製法之剖視示意圖。1A to 1G are schematic cross-sectional views showing a method of manufacturing a conventional package substrate; 2A to 2H are schematic cross-sectional views showing the manufacturing method of the first embodiment of the package substrate of the present invention; and Figs. 3A to 3H are schematic cross-sectional views showing the manufacturing method of the second embodiment of the package substrate of the present invention.
201‧‧‧電性連接墊201‧‧‧Electrical connection pads
202‧‧‧導電跡線202‧‧‧conductive traces
21‧‧‧第一介電層21‧‧‧First dielectric layer
210‧‧‧盲孔210‧‧‧Blind hole
211‧‧‧開槽211‧‧‧ slotting
23‧‧‧導電層23‧‧‧ Conductive layer
241‧‧‧第一導電盲孔241‧‧‧First conductive blind hole
242‧‧‧第一線路層242‧‧‧First line layer
Claims (19)
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