TWI393900B - Arc strength detection - Google Patents

Arc strength detection Download PDF

Info

Publication number
TWI393900B
TWI393900B TW97151769A TW97151769A TWI393900B TW I393900 B TWI393900 B TW I393900B TW 97151769 A TW97151769 A TW 97151769A TW 97151769 A TW97151769 A TW 97151769A TW I393900 B TWI393900 B TW I393900B
Authority
TW
Taiwan
Prior art keywords
arc
intensity
layer
detecting
metal film
Prior art date
Application number
TW97151769A
Other languages
English (en)
Other versions
TW201024760A (en
Inventor
Jenn Shing Wang
Original Assignee
Univ Far East
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Far East filed Critical Univ Far East
Priority to TW97151769A priority Critical patent/TWI393900B/zh
Publication of TW201024760A publication Critical patent/TW201024760A/zh
Application granted granted Critical
Publication of TWI393900B publication Critical patent/TWI393900B/zh

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Description

電弧強度偵測片
本發明是有關於一種偵測片,特別是有關於一種利用基板以作為偵測電弧強度之偵測片。
目前,由於電弧為瞬間的發射,因此目前一般在偵測電弧的技術上,大多是用以偵測電弧是否存在,且電弧之強度甚大容易造成電路短路,因此如何利用精簡的物件,以作為測量電弧之工具,係為本發明人所欲提出之理念。
有鑑於習知技藝之各項問題,為了能夠兼顧解決之,本發明人基於多年研究開發與諸多實務經驗,提出一種電弧強度偵測方法,以作為改善上述缺點之實現方式與依據。
有鑑於此,本發明之目的就是在提供一種電弧強度偵測片,以解決一般電弧強度不易量測之問題。
根據本發明之目的,提出一種電弧強度偵測片,其至少包含一偵測片本體,其係至少具有一金屬薄膜表層、一高分子低分子量物質層及一高分子聚合物層。其中,測量一電弧強度時,係利用電弧電擊偵測片本體,致使高分子低分子量物質層瞬間產生熱裂解,使偵測片本體之金屬薄膜表層爆破,藉此破壞面積以判斷測電弧之強度。
承上所述,因依本發明之電弧強度偵測片,具有以下優點:
(1)此偵測方法可藉由基板進行偵測,藉此可提高偵測電弧強度之便利性。
(2)此偵測方法可藉由基板進行偵測,藉此可解決電弧因電壓過高而無法偵測強度的問題。
茲為使 貴審查委員對本發明之技術特徵及所達到之功效有更進一步之瞭解與認識,謹佐以較佳之實施例及配合詳細之說明如後。
以下將參照相關圖式,說明依本發明較佳實施例之電弧強度偵測片,為使便於理解,下述實施例中之相同元件係以相同之符號標示來說明。
請參閱第1圖,其係為本發明之電弧強度偵測片之較佳實施例示意圖。圖中,電弧強度偵測片至少包含一偵測片本體11,其係至少具有一金屬薄膜表層111、一高分子低分子量物質層112及一高分子聚合物層113。其中,測量一電弧12強度時,係利用電弧12電擊偵測片本體11,使偵測片本體11之金屬薄膜表層111破裂致使高分子低分子量物質層112產生熱裂解,藉此以判斷測電弧12之強度。
以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。
11...偵測片本體
111...金屬薄膜表層
112...高分子分子量物質層
113...高分子聚合物層
以及
12...電弧
第1圖係為本發明之電弧強度偵測片之較佳實施例之示意圖。
11...偵測片本體
111...金屬薄膜表層
112...高分子低分子量物質層
113...高分子聚合物層
以及
12...電弧

Claims (2)

  1. 一種電弧強度偵測片,其至少包含:一偵測片本體,其係至少具有一金屬薄膜表層、一高分子低分子量物質層及一高分子聚合物層;其中,測量一電弧強度時,係利用該電弧電擊該偵測片本體,致使高分子低分子量物質層瞬間產生熱裂解,使偵測片本體之金屬薄膜表層爆破,藉此破壞面積以判斷測電弧之強度。
  2. 如申請專利範圍第1項所述之電弧強度偵測片,其中該電弧係為一高壓電。
TW97151769A 2008-12-31 2008-12-31 Arc strength detection TWI393900B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW97151769A TWI393900B (zh) 2008-12-31 2008-12-31 Arc strength detection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW97151769A TWI393900B (zh) 2008-12-31 2008-12-31 Arc strength detection

Publications (2)

Publication Number Publication Date
TW201024760A TW201024760A (en) 2010-07-01
TWI393900B true TWI393900B (zh) 2013-04-21

Family

ID=44852284

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97151769A TWI393900B (zh) 2008-12-31 2008-12-31 Arc strength detection

Country Status (1)

Country Link
TW (1) TWI393900B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102253268A (zh) * 2011-05-24 2011-11-23 郑雪东 一种电弧强度感测片

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI226052B (en) * 2003-11-06 2005-01-01 Jenn-Shing Wang Method to decompose the optical recording medium under auxiliary of using electric arc

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI226052B (en) * 2003-11-06 2005-01-01 Jenn-Shing Wang Method to decompose the optical recording medium under auxiliary of using electric arc

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
林家慶碩士論文,"以電弧加速處理廢光碟回收技術之研製",2006年6月 *

Also Published As

Publication number Publication date
TW201024760A (en) 2010-07-01

Similar Documents

Publication Publication Date Title
JP2008506950A5 (zh)
DE602007012849D1 (de) Biosensor mit nanodraht und herstellungsverfahren dafür
EP2573531A3 (en) Threshold-based temperature-dependent power/thermal management with temperature sensor calibration
TW200712453A (en) Method and apparatus for sensing liquid level using baseline characteristic
JP2016502385A5 (zh)
JP2012500657A5 (zh)
EP2228646A3 (en) Particulate matter detection device
WO2009148233A3 (ko) 레벨 감지 장치
WO2018078165A3 (en) Multi-parametric sensor with bridge structure
WO2018129439A3 (en) Socket side thermal system
TW200611368A (en) Electrically floating diagnostic plasma probe with ion property sensors
TWI393900B (zh) Arc strength detection
CN204203143U (zh) 新型热障涂层结构的光红外热波检测装置
ATE398261T1 (de) Erfassung von auskleidungsverschleiss
JP2009515171A5 (zh)
JP2011238865A5 (zh)
JP2016139646A5 (zh)
TW200613703A (en) Diamond sensor
JP2014525611A5 (zh)
BR112015008207A2 (pt) circuito integrado, aparelho sensor, método de medição de uma substância de interesse a analisar em meio, e, método de fabricação de circuito integrado
CN104425303A (zh) 测量导电层厚度的方法
KR101656652B1 (ko) 접착 구조물의 손상 탐지 장치
JP2014085259A5 (ja) ひずみ測定装置及びひずみゲージ式変換器
JP2014238319A5 (ja) 電磁波装置
CN108198876B (zh) 一种红外传感器以及红外信号强度的检测方法