TWI392640B - Lid member for mems device and method for forming same - Google Patents
Lid member for mems device and method for forming same Download PDFInfo
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Description
本發明係有關於一種封裝結構及其製法,尤指一種微機電裝置之覆蓋構件及其製法。The invention relates to a package structure and a manufacturing method thereof, in particular to a covering member of a microelectromechanical device and a manufacturing method thereof.
目前微機電裝置例如擴音器(microphone)廣泛地應用於行動通訊設備、音訊裝置等,且為避免該微機電裝置影響其他元件之功能,而必須以覆蓋構件罩設在該微機電裝置上。為解決上述缺失,業界慣以金屬材質充作該覆蓋構件內層,以達到屏蔽的效果;請參閱第1圖,係為習知用以罩設微機電裝置之覆蓋構件1,係於一板體11上以黏著層12結合一具有至少一開口100之核心板10,再於該開口100之孔壁及外露於該開口100之板體11上形成金屬層13,以構成該覆蓋構件1。At present, microelectromechanical devices such as microphones are widely used in mobile communication devices, audio devices, etc., and in order to prevent the microelectromechanical device from affecting the functions of other components, it is necessary to cover the microelectromechanical device with a cover member. In order to solve the above-mentioned defects, the industry is accustomed to use the metal material as the inner layer of the covering member to achieve the shielding effect; please refer to FIG. 1 , which is a cover member 1 for covering a micro electro mechanical device, which is attached to a board. A core layer 10 having at least one opening 100 is bonded to the body 11 by an adhesive layer 12, and a metal layer 13 is formed on the hole wall of the opening 100 and the plate body 11 exposed to the opening 100 to constitute the covering member 1.
惟,由於該覆蓋構件1內壁係屬金屬材質,導致往往會造成傳導性電磁干擾(Electromagnetic interference, EMI)或射頻干擾(Radio Frequency Interference, RFI)之問題;此外,將該金屬層13僅作為防止電磁干擾之屏蔽層而未提供其他電性功能時,將會限制微機電裝置構裝朝向輕、薄、短、小的型態發展。However, since the inner wall of the covering member 1 is made of a metal material, the problem of conductive electromagnetic interference (EMI) or radio frequency interference (RFI) is often caused; in addition, the metal layer 13 is only used as a metal layer 13 The shielding of electromagnetic interference is not provided with other electrical functions, which will limit the development of the micro-electromechanical device toward a light, thin, short, and small form.
因此,如何使微機電裝置與該覆蓋構件之間具有良好之電磁匹配性(Electromagnetic compatibility, EMC)以達成防止電磁干擾的屏蔽效應,且能使該覆蓋構件之金屬層具有其他用途,實已成目前亟欲解決的課題。Therefore, how to make a good electromagnetic compatibility (EMC) between the microelectromechanical device and the covering member to achieve a shielding effect against electromagnetic interference, and to enable the metal layer of the covering member to have other uses, The problem that is currently being solved.
鑑於上述習知技術之種種缺失,本發明之主要目的係在提供一種能提升屏蔽效應之微機電裝置之覆蓋構件及其製法。In view of the above-mentioned various deficiencies of the prior art, the main object of the present invention is to provide a covering member of a microelectromechanical device capable of improving the shielding effect and a method of manufacturing the same.
為達上述及其他目的,本發明揭露一種微機電裝置之覆蓋構件,係包括:核心板,係具有相對之第一表面及第二表面,且具有貫穿該第一及第二表面之複數通孔與至少一開口;第一電鍍金屬層,係設於該核心板之第一及第二表面與該通孔之表面;黏著層,係設於該核心板之第二表面上之第一電鍍金屬層上;板體,其一側之表面具有金屬層,且該金屬層係設於該黏著層上,以令該板體封住該開口之一端,並使該板體之金屬層外露於該開口中;以及第二電鍍金屬層,係設於該核心板之第一表面上的第一電鍍金屬層與外露於該開口中的金屬層上,且位於該開口中的第二電鍍金屬層係電性連接該核心板之第二表面上之第一電鍍金屬層。To achieve the above and other objects, the present invention discloses a covering member for a microelectromechanical device, comprising: a core plate having opposite first and second surfaces and having a plurality of through holes penetrating the first and second surfaces And a first plating metal layer disposed on the first and second surfaces of the core plate and the surface of the through hole; and an adhesive layer, the first plating metal disposed on the second surface of the core plate a layer having a metal layer on a surface thereof, and the metal layer is disposed on the adhesive layer to seal the one end of the opening and expose the metal layer of the plate And a second plating metal layer disposed on the first plating metal layer on the first surface of the core plate and the metal layer exposed in the opening, and the second plating metal layer located in the opening Electrically connecting the first plated metal layer on the second surface of the core plate.
本發明復提供一種微機電裝置之覆蓋構件之製法,係包括:提供一具有相對之第一表面及第二表面的核心板;於該核心板中形成複數貫穿該第一及第二表面之通孔;於該核心板之第一及第二表面與該些通孔之孔壁上形成晶種層;於該晶種層上形成第一電鍍金屬層;於該核心板之第二表面上的第一電鍍金屬層形成黏著層;貫穿該核心板、第一電鍍金屬層及黏著層以形成至少一之開口;於該黏著層上結合一具有金屬層之板體,以封住該開口之一端,且令該金屬層結合至該黏著層上,使該金屬層外露於該開口中;以及於該外露之第一電鍍金屬層及該開口中之金屬層上形成第二電鍍金屬層,且位於該開口中的第二電鍍金屬層係電性連接該核心板之第二表面上之第一電鍍金屬層。The invention provides a method for manufacturing a covering member of a microelectromechanical device, comprising: providing a core plate having a first surface and a second surface; and forming a plurality of through the first and second surfaces in the core plate Forming a seed layer on the first and second surfaces of the core plate and the hole walls of the through holes; forming a first plated metal layer on the seed layer; and forming a first plating metal layer on the second surface of the core plate The first plated metal layer forms an adhesive layer; the core plate, the first plated metal layer and the adhesive layer are formed to form at least one opening; and a plate body having a metal layer is bonded to the adhesive layer to seal one end of the opening And bonding the metal layer to the adhesive layer to expose the metal layer in the opening; and forming a second plating metal layer on the exposed first plating metal layer and the metal layer in the opening The second plated metal layer in the opening is electrically connected to the first plated metal layer on the second surface of the core plate.
依上所述之微機電裝置之覆蓋構件及其製法,該核心板的第一及第二表面上具有初始金屬層。According to the covering member of the microelectromechanical device and the method of manufacturing the same, the core plate has an initial metal layer on the first and second surfaces.
依上述之微機電裝置之覆蓋構件及其製法,復包括表面處理層,係設於該第二電鍍金屬層上,而形成該表面處理層之材料係選自由化學鍍鎳/金、化鎳浸金(ENIG)、化鎳鈀浸金(ENEPIG)、化學鍍錫(Immersion Tin)及有機保焊劑 (OSP)所組成之群組中之其中一者。The covering member of the MEMS device and the method for manufacturing the same, comprising a surface treatment layer disposed on the second plating metal layer, and the material forming the surface treatment layer is selected from the group consisting of electroless nickel/gold, nickel immersion One of a group consisting of ENIG, ENEPIG, Immersion Tin, and Organic Soldering Agent (OSP).
又依上所述,本發明之另一實施態樣,復包括貫穿該開口中之板體與第二電鍍金屬層以形成音孔。According to still another aspect of the present invention, a plate body and a second plated metal layer extending through the opening are formed to form a sound hole.
由上可知,本發明微機電裝置之覆蓋構件及其製法藉由先形成複數貫穿之通孔,再形成至少一貫穿之開口,以於薄基板形成大開口,且於該外露之第一電鍍金屬層及該開口中之金屬層上形成第二電鍍金屬層,使微機電裝置與該覆蓋構件間具有良好之電磁匹配性(EMC)以達成防止電磁干擾的屏蔽效應。再者,該覆蓋構件之第二電鍍金屬層係電性連接其他區域之第一電鍍金屬層,因而具有接地或其他電性功能。It can be seen that the covering member of the MEMS device of the present invention and the method for manufacturing the same are formed by forming a plurality of through holes and forming at least one through opening to form a large opening in the thin substrate, and the exposed first plating metal A second electroplated metal layer is formed on the metal layer in the layer and the opening to provide good electromagnetic matching (EMC) between the microelectromechanical device and the covering member to achieve a shielding effect against electromagnetic interference. Furthermore, the second plated metal layer of the cover member is electrically connected to the first plated metal layer of the other regions and thus has a grounding or other electrical function.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.
請參閱第2A至2I圖,係為本發明所揭露之一種微機電裝置之覆蓋構件之製法。Please refer to FIGS. 2A to 2I for the manufacturing method of the covering member of the microelectromechanical device disclosed in the present invention.
如第2A圖所示,首先,提供具有相對之第一表面20a及第二表面20b的一核心板20,且該核心板20之第一及第二表面20a,20b上具有初始金屬層21。As shown in FIG. 2A, first, a core plate 20 having a first surface 20a and a second surface 20b opposite thereto is provided, and the first and second surfaces 20a, 20b of the core plate 20 have an initial metal layer 21.
如第2B圖所示,接著,以機械鑽孔方式,於該核心板20中形成複數貫穿該初始金屬層21、第一及第二表面20a,20b之通孔200。As shown in FIG. 2B, a plurality of through holes 200 penetrating the initial metal layer 21, the first and second surfaces 20a, 20b are formed in the core plate 20 by mechanical drilling.
如第2C圖所示,於該核心板20之第一及第二表面20a,20b上之初始金屬層21上及該些通孔200之孔壁上形成晶種層23。As shown in FIG. 2C, a seed layer 23 is formed on the initial metal layer 21 on the first and second surfaces 20a, 20b of the core plate 20 and the hole walls of the through holes 200.
如第2D圖所示,藉由該晶種層23作為電鍍時之電流傳導路徑,以於該晶種層23上電鍍形成第一電鍍金屬層22a;另外,可選擇性地於該通孔200中填充塞孔材料200a。As shown in FIG. 2D, the seed layer 23 is used as a current conduction path during electroplating to form a first plated metal layer 22a on the seed layer 23; and optionally, the through hole 200 is provided. The plug hole material 200a is filled.
如第2E及2F圖所示,先於該核心板20之第二表面20b上方之第一電鍍金屬層22a上形成黏著層25,再以機械銑孔方式,於該核心板20、第一電鍍金屬層22a及黏著層25中形成至少一貫穿之開口201。As shown in FIGS. 2E and 2F, an adhesive layer 25 is formed on the first plated metal layer 22a above the second surface 20b of the core plate 20, and then mechanically milled, the core plate 20, and the first plating. At least one opening 201 is formed in the metal layer 22a and the adhesive layer 25.
亦或,如第2E’圖所示,於該核心板20與第一電鍍金屬層22a中形成至少一貫穿之第一開口201’,且於該黏著層25中形成至少一貫穿之第二開口250,再將該黏著層25之第二開口250對應該第一開口201’而將該黏著層25結合於該第一電鍍金屬層22a,以形成該開口201。Or, as shown in FIG. 2E, at least one first opening 201 ′ is formed in the core plate 20 and the first plating metal layer 22 a , and at least one second opening is formed in the adhesive layer 25 . 250, the second opening 250 of the adhesive layer 25 is corresponding to the first opening 201' to bond the adhesive layer 25 to the first plating metal layer 22a to form the opening 201.
該些通孔200及該開口201同樣係以機械製孔成形之,因而能加速製程之進行,以提高生產速度,並能降低製程之複雜度。The through holes 200 and the openings 201 are also formed by mechanical holes, thereby accelerating the process, increasing the production speed and reducing the complexity of the process.
如第2G圖所示,於該黏著層25上結合一具有金屬層260之板體26,以封住該開口201之一端,且令該金屬層260結合至該黏著層25上,使該金屬層260外露於該開口201中。As shown in FIG. 2G, a plate 26 having a metal layer 260 is bonded to the adhesive layer 25 to seal one end of the opening 201, and the metal layer 260 is bonded to the adhesive layer 25 to make the metal. Layer 260 is exposed in the opening 201.
如第2H圖所示,於該外露之第一電鍍金屬層22a及該開口201中之金屬層260上形成第二電鍍金屬層22b,且位於該核心板20之開口201中的第二電鍍金屬層22b係電性連接該核心板20之第二表面20b上方之第一電鍍金屬層22a。As shown in FIG. 2H, a second plating metal layer 22b is formed on the exposed first plating metal layer 22a and the metal layer 260 in the opening 201, and the second plating metal is located in the opening 201 of the core board 20. The layer 22b is electrically connected to the first plated metal layer 22a above the second surface 20b of the core plate 20.
本發明之開口201之孔壁不需形成金屬材,使微機電裝置與該覆蓋構件間具有良好之電磁匹配性(EMC),以達成防止電磁干擾的屏蔽效應;再者,能使該覆蓋構件之第二電鍍金屬層22b與其他區域之第一電鍍金屬層22a電性連通而具有接地或其他電性功能。The hole wall of the opening 201 of the present invention does not need to form a metal material, so that the electromagnetic compatibility between the microelectromechanical device and the covering member is good, so as to achieve a shielding effect against electromagnetic interference; furthermore, the covering member can be made The second plated metal layer 22b is in electrical communication with the first plated metal layer 22a of other regions and has a grounding or other electrical function.
如第2I圖所示,於該第二電鍍金屬層22b上形成表面處理層27,而形成該表面處理層27之材料係選自由化學鍍鎳/金、化鎳浸金(ENIG)、化鎳鈀浸金(ENEPIG)、化學鍍錫(Immersion Tin)及有機保焊劑 (OSP)所組成之群組中之其中一者。As shown in FIG. 2I, a surface treatment layer 27 is formed on the second plating metal layer 22b, and the material forming the surface treatment layer 27 is selected from the group consisting of electroless nickel/gold, nickel immersion gold (ENIG), and nickel. One of a group consisting of ENEPIG, Immersion Tin, and Organic Soldering Agent (OSP).
依上所述,亦可於該開口201中形成貫穿該板體26與第二電鍍金屬層22b之音孔28。According to the above, the sound hole 28 penetrating the plate body 26 and the second plating metal layer 22b may also be formed in the opening 201.
本發明復提供一種微機電裝置之覆蓋構件,係包括:核心板20,係具有相對之第一表面20a及第二表面20b,且該核心板20中具有貫穿該第一及第二表面20a,20b之複數通孔200與至少一開口201;第一電鍍金屬層22a,係設於該核心板20之第一及第二表面20a,20b與該通孔200之表面;黏著層25,係設於該核心板20之第二表面20b上之第一電鍍金屬層22a上;板體26,其一側之表面具有金屬層260,且該金屬層260係設於該黏著層25上,以令該板體26封住該開口201之一端,並使該板體26之金屬層260外露於該開口201中;以及第二電鍍金屬層22b,係設於該核心板20之第一表面20a上方的第一電鍍金屬層22a上與外露於該開口201中的金屬層260上,且位於該開口201中的第二電鍍金屬層22b係電性連接該核心板20之第二表面20b上方之第一電鍍金屬層22a。The present invention provides a cover member for a microelectromechanical device, comprising: a core plate 20 having an opposite first surface 20a and a second surface 20b, and having a first and second surface 20a extending through the core plate 20; a plurality of through holes 200 of 20b and at least one opening 201; a first plated metal layer 22a is disposed on the first and second surfaces 20a, 20b of the core plate 20 and a surface of the through hole 200; and an adhesive layer 25 is provided On the first plated metal layer 22a on the second surface 20b of the core plate 20, the plate body 26 has a metal layer 260 on one surface thereof, and the metal layer 260 is disposed on the adhesive layer 25 to The plate body 26 seals one end of the opening 201 and exposes the metal layer 260 of the plate body 26 in the opening 201; and the second plated metal layer 22b is disposed on the first surface 20a of the core plate 20. The first plating metal layer 22a is on the metal layer 260 exposed in the opening 201, and the second plating metal layer 22b located in the opening 201 is electrically connected to the second surface 20b of the core board 20. A plated metal layer 22a.
所述之核心板20之第一及第二表面20a,20b上具有初始金屬層21。The first and second surfaces 20a, 20b of the core panel 20 have an initial metal layer 21 thereon.
所述之覆蓋構件復包括表面處理層27,係設於該第二電鍍金屬層22b上,且形成該表面處理層27之材料係選自由化學鍍鎳/金、化鎳浸金(ENIG)、化鎳鈀浸金(ENEPIG)、化學鍍錫(Immersion Tin)及有機保焊劑 (OSP)所組成之群組中之其中一者。The covering member further comprises a surface treatment layer 27, which is disposed on the second plating metal layer 22b, and the material forming the surface treatment layer 27 is selected from the group consisting of electroless nickel/gold, nickel immersion gold (ENIG), One of a group of nickel-palladium immersion gold (ENEPIG), electroless tin plating (Immersion Tin), and organic solder resist (OSP).
所述之覆蓋構件復包括音孔28,係貫穿該開口201中之板體26與第二電鍍金屬層22b。The cover member includes a sound hole 28 extending through the plate body 26 and the second plated metal layer 22b in the opening 201.
綜上所述,本發明微機電裝置之覆蓋構件及其製法,係先形成貫穿之複數通孔,再形成貫穿之至少一開口,以於薄基板形成大開口,且於該外露之第一電鍍金屬層及該開口中之金屬層上形成第二電鍍金屬層,使微機電裝置與該覆蓋構件之間具有良好之電磁匹配性(EMC)以達成防止電磁干擾的屏蔽效應。In summary, the covering member of the MEMS device of the present invention and the method for manufacturing the same are formed by forming a plurality of through holes through which a through hole is formed to form a large opening in the thin substrate, and the first plating is performed on the exposed portion. A second plating metal layer is formed on the metal layer and the metal layer in the opening to provide good electromagnetic matching (EMC) between the microelectromechanical device and the covering member to achieve a shielding effect against electromagnetic interference.
再者,該覆蓋構件之第二電鍍金屬層係電性連接其他區域之第一電鍍金屬層,因而具有接地或其他電性功能。又本發明之製程時間短,故能增加產出。Furthermore, the second plated metal layer of the cover member is electrically connected to the first plated metal layer of the other regions and thus has a grounding or other electrical function. Moreover, the process time of the present invention is short, so that the output can be increased.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
1‧‧‧覆蓋構件1‧‧‧covering components
10,20‧‧‧核心板10,20‧‧‧ core board
100,201‧‧‧開口100,201‧‧‧ openings
11,26‧‧‧板體11,26‧‧‧ plate
12,25‧‧‧黏著層12,25‧‧‧Adhesive layer
13、260‧‧‧金屬層13, 260‧‧‧ metal layer
20a‧‧‧第一表面20a‧‧‧ first surface
20b‧‧‧第二表面20b‧‧‧second surface
200‧‧‧通孔200‧‧‧through hole
200a‧‧‧塞孔材料200a‧‧‧ hole material
201’‧‧‧第一開口201’‧‧‧ first opening
250‧‧‧第二開口250‧‧‧second opening
21‧‧‧初始金屬層21‧‧‧Initial metal layer
22a‧‧‧第一電鍍金屬層22a‧‧‧First electroplated metal layer
22b‧‧‧第二電鍍金屬層22b‧‧‧Second plated metal layer
23‧‧‧晶種層23‧‧‧ seed layer
27‧‧‧表面處理層27‧‧‧Surface treatment layer
28‧‧‧音孔28‧‧‧ sound hole
第1圖係為習知微機電裝置上之覆蓋構件之剖視示意圖;以及Figure 1 is a schematic cross-sectional view of a cover member on a conventional MEMS device;
第2A至2I圖係為本發明微機電裝置之覆蓋構件及其製法之剖視圖;其中,第2E’圖係為第2E圖之另一實施例。2A to 2I are cross-sectional views showing a covering member of the microelectromechanical device of the present invention and a method of manufacturing the same, and Fig. 2E' is another embodiment of Fig. 2E.
20‧‧‧核心板20‧‧‧ core board
200‧‧‧通孔200‧‧‧through hole
201‧‧‧開口201‧‧‧ openings
20a‧‧‧第一表面20a‧‧‧ first surface
20b‧‧‧第二表面20b‧‧‧second surface
21‧‧‧初始金屬層21‧‧‧Initial metal layer
22a‧‧‧第一電鍍金屬層22a‧‧‧First electroplated metal layer
22b‧‧‧第二電鍍金屬層22b‧‧‧Second plated metal layer
23‧‧‧晶種層23‧‧‧ seed layer
25‧‧‧黏著層25‧‧‧Adhesive layer
26‧‧‧板體26‧‧‧ board
260‧‧‧金屬層260‧‧‧metal layer
Claims (10)
核心板,係具有相對之第一表面及第二表面,且具有貫穿該第一及第二表面之複數通孔與至少一開口;
第一電鍍金屬層,係設於該核心板之第一及第二表面與該通孔之表面;
黏著層,係設於該核心板之第二表面上之第一電鍍金屬層上;
板體,其一側之表面具有金屬層,且該金屬層係設於該黏著層上,以令該板體封住該開口之一端,並使該板體之金屬層外露於該開口中;以及
第二電鍍金屬層,係設於該核心板之第一表面上的第一電鍍金屬層與外露於該開口中的金屬層上,且位於該開口中的第二電鍍金屬層係電性連接該核心板之第二表面上之第一電鍍金屬層。A covering member for a microelectromechanical device includes:
The core plate has opposite first and second surfaces, and has a plurality of through holes and at least one opening extending through the first and second surfaces;
a first plating metal layer is disposed on the first and second surfaces of the core plate and the surface of the through hole;
An adhesive layer is disposed on the first electroplated metal layer on the second surface of the core plate;
a plate body having a metal layer on one side thereof, and the metal layer is disposed on the adhesive layer such that the plate body seals one end of the opening and exposes the metal layer of the plate body to the opening; And a second plating metal layer, the first plating metal layer disposed on the first surface of the core plate and the metal layer exposed in the opening, and the second plating metal layer located in the opening is electrically connected a first plated metal layer on the second surface of the core plate.
提供一具有相對之第一表面及第二表面的核心板;
於該核心板中形成複數貫穿該第一及第二表面之通孔;
於該核心板之第一及第二表面與該些通孔之孔壁上形成晶種層;
於該晶種層上形成第一電鍍金屬層;
於該核心板之第二表面上的第一電鍍金屬層形成黏著層;
貫穿該核心板、第一電鍍金屬層及黏著層以形成至少一之開口;
於該黏著層上結合一具有金屬層之板體,以封住該開口之一端,且令該金屬層結合至該黏著層上,使該金屬層外露於該開口中;以及
於該外露之第一電鍍金屬層及該開口中之金屬層上形成第二電鍍金屬層,且位於該開口中的第二電鍍金屬層係電性連接該核心板之第二表面上之第一電鍍金屬層。A method for fabricating a covering member of a microelectromechanical device includes:
Providing a core plate having opposite first and second surfaces;
Forming a plurality of through holes penetrating the first and second surfaces in the core plate;
Forming a seed layer on the first and second surfaces of the core plate and the holes of the through holes;
Forming a first plated metal layer on the seed layer;
Forming an adhesive layer on the first plated metal layer on the second surface of the core plate;
Passing through the core plate, the first plating metal layer and the adhesive layer to form at least one opening;
Bonding a plate having a metal layer on the adhesive layer to seal one end of the opening, and bonding the metal layer to the adhesive layer to expose the metal layer in the opening; and in the exposed A second electroplated metal layer is formed on the electroplated metal layer and the metal layer in the opening, and the second electroplated metal layer in the opening is electrically connected to the first electroplated metal layer on the second surface of the core plate.
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TW99113762A TWI392640B (en) | 2010-04-30 | 2010-04-30 | Lid member for mems device and method for forming same |
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Citations (2)
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CN101207101A (en) * | 2006-12-19 | 2008-06-25 | 育霈科技股份有限公司 | Pattern shielding structure for dry etching and method thereof |
TW200909336A (en) * | 2007-08-17 | 2009-03-01 | Advanced Semiconductor Eng | Microelectromechanical-system package and method for manufacturing the same |
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CN101207101A (en) * | 2006-12-19 | 2008-06-25 | 育霈科技股份有限公司 | Pattern shielding structure for dry etching and method thereof |
TW200909336A (en) * | 2007-08-17 | 2009-03-01 | Advanced Semiconductor Eng | Microelectromechanical-system package and method for manufacturing the same |
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