TWI392005B - Dicing/die bonding film - Google Patents

Description

Sliced, sticky wafer

The present invention relates to a dicing, diebond film. The dicing and bonding wafers are used to fix a wafer-like workpiece (a semiconductor chip, etc.) and an electrode component adhesive to a workpiece (a semiconductor wafer, etc.) before dicing. Can be used to feed the workpiece to the crystal. Further, the present invention relates to a method of fixing a wafer-shaped workpiece using the diced or bonded wafer, and a method of manufacturing a semiconductor device. Further, a semiconductor device in which a wafer-like workpiece is bonded and fixed by the fixing method or the manufacturing method is used.

In the fabrication of previous semiconductor devices, a silver paste can be used to secure a semiconductor wafer to a lead frame or electrode component. The relevant fixing treatment is performed by applying a paste on a die pad or the like of a lead frame, and then mounting a semiconductor wafer thereon to cure the slurry layer.

The semiconductor wafer forming the circuit pattern is diced into a semiconductor wafer (dicing step) by adjusting the thickness (backgrind step) by back grinding as needed, and the dicing step is performed by an adhesive The semiconductor wafer is fixed to a bonded body such as a lead frame (die attach step), and further subjected to a wire bonding step. In the dicing step, in order to remove the cutting chips, the semiconductor wafer is usually cleaned with moderate hydraulic pressure.

In the treatment step, in the method of additionally applying the adhesive to the lead frame or the wafer, it is difficult to homogenize the adhesive layer, and the application of the adhesive must be specially designed and used for a long time. Therefore, in Japanese Patent Laid-Open Publication No. SHO 60-57642 (page 1), there is proposed a diced, viscous wafer which not only adheres to the semiconductor wafer during the dicing step but also in the die attach step. A necessary layer of the adhesive for fixing the wafer is provided.

The dicing and bonding wafer is formed by detachably providing an adhesive layer on the supporting substrate, and the semiconductor wafer is diced after the adhesive layer is held, and the supporting substrate is extended. The formed wafer and the adhesive layer are peeled off one by one, and each of them is recovered, and then fixed to a bonded body such as a lead frame via the adhesive layer.

In this case, the dicing and bonding wafers require a strong adhesion to prevent the support substrate and the adhesive layer from being peeled off when the semiconductor wafer is diced, and the semiconductor wafer and the adhesive layer can be easily formed after dicing. Peel off from the support substrate.

However, in the case of the dicing or sticking wafer of the above structure, it is difficult to adjust the adhesion of the adhesive layer. Therefore, there is disclosed a crystal-cutting and adhesive wafer which is formed by a method in which an adhesive layer is provided between a support substrate and an adhesive layer, and the balance between adhesion and detachment is good (refer to Japanese Patent Laid-Open No. 2- Bulletin No. 248064 (page 1)).

Further, in the dicing step, when the semiconductor wafer on which the circuit pattern is formed is cut, there are cases where filamentous chips are generated from the diced wafer or the bonded wafer, and adhered to the semiconductor wafer or the diced or bonded wafer. The filamentous chips are further adhered to the organic substrate or the lead frame or the semiconductor wafer to be bonded, in the following steps, that is, the die bonding step and the bonding wire bonding step, not only significantly lowering the operability, but also making the semiconductor The reliability of the wafer is reduced, which becomes a big problem.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a dicing die or a die wafer which suppresses the generation of filamentous chips and prevents the grade of a semiconductor wafer from being lowered, and a method of fixing a wafer-shaped workpiece using the method. The obtained semiconductor device and its manufacturing method.

The present inventors have conducted studies for achieving the above object, and as a result, have found that the generation of filamentous chips is caused by cutting the support substrate by a dicing blade, and the present invention has been completed by employing the following structure.

In other words, the dicing die or the adhesive wafer of the present invention is a diced or viscous wafer in which an adhesive layer and a die bonding adhesive layer are sequentially laminated on a support substrate to solve the above problems, and the adhesive is characterized in that the adhesive is used. layer has a thickness of 10 ~ 80 μm, at 23 ℃ in elastic modulus of ^{1 × 10 4 ~ 1 × 10} 1 0 Pa.

Invention of the above construction, by the thickness of the adhesive layer is set to 10 ~ 80 μm, and the adhesive layer to the elastic modulus at 23 ℃ provided 1 × 10 ⁴ ~ 1 × ⁰ 10 ¹ Pa within the scope of The elastic component (i.e., hardness) of the adhesive layer is set within a predetermined range. That is, by setting it within the above numerical range, the cutting depth at the time of dicing is stopped at the adhesive layer, and the support substrate is prevented from being cut. As a result, the formation of filamentous debris can be prevented. If the elastic modulus is less than 1 × 10 ⁴ Pa, there is a case where the workpiece moves due to vibration when the workpiece is cut, for example. However, by setting it within the above numerical range, it can suppress it, and as a result, it is possible to reduce the part of the wafer-formed workpiece, that is, the reduction of the so-called debris. Further, if the elastic modulus exceeds ¹ × 10 1 ⁰ Pa, the insufficient adhesive force of the adhesive layer by wafer bonding layer bonding agent situation there. However, if it is set in the above numerical range, the adhesive force can be suppressed from being excessively lowered, and as a result, the workpiece can be surely fixed to the diced or bonded wafer, and the flying sheet or the swarf can be suppressed during the dicing.

Preferably, the above adhesive layer is a radiation curable adhesive layer.

Preferably, at least the portion corresponding to the portion to which the workpiece is attached to the adhesive layer for wafer bonding satisfies the numerical range of the elastic modulus of the adhesive layer.

Preferably, at the interface between the adhesive layer and the adhesive layer for bonding the wafer, the peeling property at the interface corresponding to the workpiece attaching portion is greater than the interface at a portion corresponding to one or all of the other portions. Peelability.

The peeling property of the interface may be due to an adhesive force corresponding to the adhesive layer for bonding the wafer of the adhesive layer, and an adhesive portion corresponding to the portion to which the workpiece is attached may be smaller than a portion of the portion other than the adhesive portion. Or the structure of the adhesion of all the corresponding parts is obtained.

By forming the above structure, in a part or all of the portion corresponding to the portion other than the attached portion of the workpiece, the adhesive layer is adhesively bonded to the wafer as compared with the portion corresponding to the attached portion of the workpiece. The state of the ground bond. As a result, for example, in the case of dicing or expanding, the adhesive layer and the adhesive layer for bonding the wafer can be easily peeled off. On the other hand, the portion corresponding to the attached portion of the workpiece can be peeled off more easily than the other portions. Therefore, even for a large wafer such as, for example, more than 10 mm × 10 mm, crystal cutting defects are not caused, and the wafer-like workpiece obtained after the dicing can be easily peeled off, whereby crystal cutting excellent in pick-up property can be obtained. Sticky wafer. In other words, the above configuration can appropriately balance the holding force at the time of cutting or the like and the peeling property at the time of picking.

Preferably, in the adhesion of the adhesive layer for bonding the wafer, the adhesion to the workpiece attached to the workpiece is greater than the adhesion to the adhesive layer of the portion corresponding to the attachment portion of the workpiece.

By forming the above-described structure, for example, when picking up a wafer-like workpiece obtained by cutting a workpiece, the wafer-shaped workpiece can be easily peeled off from the adhesive layer in a state in which the adhesive layer for wafer bonding is attached.

Preferably, a part of the portion other than the attachment portion of the workpiece is a cleavage ring attachment portion.

Preferably, in the adhesion of the adhesive layer for bonding the wafer, the adhesion to the dicing ring of the dicing ring attachment portion is smaller than the adhesion to the corresponding portion of the dicing ring attachment portion. The adhesion of the layers.

By forming the above structure, the dicing ring can be easily peeled off from the adhesive layer for bonding the wafer, and the adhesive layer for bonding the wafer is prevented from sticking to the dicing ring from the adhesive layer. .

Preferably, the adhesive bonding layer for wafer bonding is provided on a part of the adhesive layer as a workpiece attaching portion, and an adhesive force of a portion corresponding to the attached portion of the workpiece in the adhesive layer. Less than the adhesion of the other parts.

Thereby, even when the adhesive layer for bonding the wafer is a structure which is provided on a part of the adhesive layer as the attachment portion of the workpiece, the wafer-shaped workpiece can be attached when the wafer-shaped workpiece is picked up. The adhesive layer is easily peeled off in the state of the adhesive layer for wafer bonding.

Preferably, in the adhesive force of the adhesive layer for bonding the wafer, the adhesive force to the workpiece attached to the workpiece is greater than the adhesive force to the adhesive layer of the portion corresponding to the workpiece attachment portion.

As a result, in the same manner as described above, when the wafer-shaped workpiece is picked up, the wafer-shaped workpiece can be easily peeled off from the adhesive layer in a state in which the adhesive layer for wafer bonding is attached.

Preferably, the adhesive layer is formed by a radiation-curable adhesive, and a portion corresponding to the attached portion of the workpiece is cured by radiation.

Moreover, the method of fixing a wafer-like workpiece according to the present invention is a wafer-shaped workpiece fixing method using the above-described dicing and sticking wafer to solve the above-described problems, and the method for fixing the wafer-shaped workpiece includes: bonding the wafer to the wafer a step of crimping the workpiece on the attached portion of the workpiece with the adhesive layer; and as a step of cutting the workpiece and the adhesive layer for bonding the wafer into a wafer, stopping cutting on the adhesive layer a step of crystallizing the workpiece attached portion of the wafer-like workpiece and the adhesive layer for bonding the wafer to the adhesive layer; and attaching the workpiece via the adhesive layer for bonding the wafer In part, the step of bonding and fixing the wafer-like workpiece to the semiconductor element.

Since the invention of the above-described method is used having a thickness of 10 ~ 80 μm, the elastic modulus of 23 ℃ of ^{1 × 10 4 ~ 1 × 10} 1 0 Pa of the adhesive layer was cut crystal, sticky wafer, and therefore the workpiece at least When the adhesive layer for wafer bonding is cut into a wafer shape, the dicing stops at the adhesive layer, and the support substrate is not cut. As a result, it is possible to prevent the filamentous chips generated by cutting the support substrate. Moreover, the activity of the workpiece due to vibration during the dicing can be reduced. As a result, debris of the wafer-like workpiece can be reduced. Moreover, since the adhesion of the adhesive layer for the adhesion of the adhesive layer to the adhesive layer can be suppressed, the workpiece can be surely fixed to the dicing die or the adhesive wafer, thereby reducing the flying chips generated during the crystal cutting or not. Qi.

Further, in the semiconductor device of the present invention, in order to solve the above problems, the wafer-like workpiece is adhered by the above-described wafer-like workpiece fixing method, and the wafer-like workpiece is adhered via the adhesive in the adhesive layer for wafer bonding. It is fixed to the semiconductor component.

Moreover, the method of manufacturing a semiconductor device according to the present invention is a method for fabricating a semiconductor device using the above-described diced or bonded wafer, which is characterized in that the method for fabricating a semiconductor device includes bonding the wafer to the wafer. a step of crimping the workpiece on the workpiece attaching portion of the agent layer; and a step of cutting the crystal into the wafer layer by the step of cutting the workpiece and the adhesive layer for bonding the wafer into the wafer; The step of peeling the wafer-like workpiece from the adhesive layer in the adhesive layer of the wafer bonding layer from the adhesive layer; and bonding the wafer-shaped workpiece to the semiconductor element via the adhesive.

Also, because the method of the invention having a thickness of 10 ~ 80 μm, the elastic modulus of 23 ℃ of ^{1 × 10 4 ~ 1 × 10} 1 0 Pa of the adhesive layer was cut crystal wafer sticky, and therefore prevented The support substrate is cut, and as a result, generation of filamentous debris can be prevented. Moreover, it is possible to suppress the occurrence of flying chips or irregularities while reducing wafer-like workpiece debris at the time of dicing.

Further, in the semiconductor device of the present invention, in order to solve the above problems, the wafer-shaped workpiece is bonded via the adhesive in the adhesive layer for wafer bonding by the method for manufacturing a semiconductor device described above. Fixed to the semiconductor component.

The present invention exerts the following effects by the method described above.

That is, when the crystal cut in accordance with the present invention, the wafer sticky, due to having a thickness of 10 ~ 80 μm, the elastic modulus of 23 ℃ of 1 × 10 ⁴ ~ 1 × adhesive layer 10 ^{1 0} Pa, it is possible to prevent When the workpiece is cut, the support substrate is cut, and as a result, filamentous debris is prevented from being generated. As a result, it is possible to prevent the filamentous particles from adhering to the wafer-like workpiece and being contaminated.

Embodiments of the present invention will be described below with reference to the drawings. In addition, the part which does not need to be explained is abbreviate|omitted, and the part which shows the illustration of enlargement or reduction is shown in FIG.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an example of a diced or viscous wafer of the present invention in an embodiment. As shown in the same figure, the dicing wafer 10 is a structure in which an adhesive layer 2, a die bonding adhesive layer 3, and a peelable protective layer 4 are sequentially laminated on a support substrate 1.

The support substrate 1 is a strength precursor of the diced, bonded wafer film 10. The support substrate 1 may, for example, be a low density polyethylene, a linear polyethylene, a medium density polyethylene, a high density polyethylene, an ultra low density polyethylene, a random copolymerized polypropylene, a block copolymerized polypropylene, or the like. Polyolefins such as homopolypropylene, polybutene, polymethylpentene, ethylene-ethyl acetate copolymer, ethylene-propylene copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(A Acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate Etc. Polyester, Polycarbonate, Polyimide, Polyetheretherketone, Polyimine, Polyetherimine, Polyamide, Fully Aromatic Polyamine, Polyphenylene Sulfide, Aromatic Polyfluorene Aramide (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, polyoxyn resin, plastic film containing these mixtures, and the like. Further, a polymer such as a crosslinked body of the above resin may also be mentioned.

Further, the support substrate 1 may also be used without extension. Further, if necessary, a one-axis or two-axis extension process may be used as needed. In the support substrate 1 including the resin sheet which is heat-shrinkable by the stretching treatment or the like, the adhesion of the adhesive layer 2 to the wafer can be reduced by heat-shrinking the support substrate 1 after the dicing. The bonding area of the adhesive layer 3 is simplified in the recovery of the wafer-like workpiece.

In order to improve adhesion to the adjacent layer, retention, and the like, the surface of the support substrate 1 may be subjected to a usual surface treatment. The method may, for example, be a chemical or physical treatment such as chromic acid treatment, ozone exposure, fire exposure, high-voltage electric shock exposure, or free radiation treatment, or a coating treatment using a primer (for example, an adhesive substance described later).

The above-mentioned support substrate 1 can be appropriately selected and used as the same or different types of constituent materials. In addition, a variety of people can be used as needed. Further, in order to impart antistatic ability, the support substrate 1 may be provided on the plastic film, and may be provided with a metal, an alloy, or the like, and has a thickness of 30 to 500. A film of a vapor deposition layer of the left and right conductive materials. Further, a laminate or the like in which the above films are bonded to each other or to another film may be used. Further, the support substrate 1 may be a laminated film in which a single layer or a film of the above material or the like is laminated in two or more layers. In the case where the adhesive layer 2 is a radiation-curable type, at least a part of radiation that transmits X-rays, ultraviolet rays, or electron beams can be used.

Further, the adhesive film can have an antistatic property for the purpose of preventing static electricity generated when it is adhered or peeled off or the like, or a semiconductor wafer charging destruction circuit. The antistatic property can be imparted by adding an antistatic agent or a conductive agent to support the sheet to the adhesive layer, and attaching a conductive layer including a charge transfer composite or a metal film to the support sheet, etc., preferably, it is difficult A way to create impurity ions that can cause deterioration of the semiconductor wafer.

The thickness of the support substrate 1 is, for example, about 5 to 200 μm, and is not particularly limited as long as it has a thickness capable of withstanding the tension generated by the adhesive layer 3 for wafer bonding by the above heat shrinkage. Furthermore, the support substrate 1 may also be a person who transmits ultraviolet rays.

The above-described adhesive layer 2 having a thickness of 10 ~ 80 μm, the elastic modulus of 23 ℃ becomes 1 × 10 ⁴ ~ 1 × 10 ^{1 0} Pa properties of. The thickness and the modulus of elasticity at 23 ° C are set in the above numerical range in order to prevent the dicing depth at the time of dicing from being stopped within the range of the adhesive layer 2, and to prevent the support substrate 1 from reaching. The crystal cutting condition for making the thickness and the elastic modulus of the adhesive layer 2 sufficiently exert the action and effect of the present invention is, for example, a dicing speed in the range of 5 to 150 mm/sec, and the cutting blade The number of revolutions is in the range of 25,000 to 50,000 rpm.

Further, by setting the elastic modulus at 23 ° C within the above numerical range, generation of chips can be prevented, and flying sheets or irregularities can be prevented from occurring when the wafer-like workpiece is picked up. The elastic modulus, more preferably ^{1 × 10 7 ~ 1 × 10} 1 0 Pa, particularly preferably ^{1 × 10 7 ~ 1 × 10} 9 Pa. If the modulus of elasticity is less than 1 × 10 ⁷ Pa, it is easy to cut into the support substrate 1 and increase the generation of filamentous chips. Further, the dicing step causes the wafer-like workpiece to be easily moved to generate debris. On the other hand, if greater than ¹ × 10 1 ⁰ Pa, the step-cut crystal piece prone to fly, and, in the die attach step, or missing flyer generated when picking the wafer. Further, there is a tendency that the amount of wear of the dicing blade increases or the rate of generation of debris increases.

Further, the thickness of the adhesive layer 2 is set within the above numerical range in order to prevent wafer cross-section defects or to maintain the adhesiveness of the adhesive layer 3 for wafer bonding. As for the thickness, it is preferably 20 to 70 μm, more preferably 20 to 60 μm, and particularly preferably 20 to 50 μm.

The adhesive layer 2 has a peeling property with respect to the adhesive layer 3 for bonding to the wafer, and has the following relationship (see FIG. 2). In other words, the interface A corresponding to the workpiece attaching portion 3a (hereinafter sometimes referred to as the wafer bonding adhesive layer 3a) of the adhesive layer 3 for bonding the wafer, and the other portion 3b (hereinafter, The interface B corresponding to the adhesive bonding layer 3b for wafer bonding has a relationship that the peeling property of the interface A is larger than the peeling property of the interface B. In order to satisfy this relationship, the adhesive layer 2 is designed, for example, in such a manner that the adhesive portion of the portion 2a (hereinafter referred to as the adhesive layer 2a) corresponding to the workpiece attaching portion 3a (described later) is smaller than a portion other than the portion thereof. Or the adhesion of all the corresponding portions 2b (hereinafter sometimes referred to as the adhesive layer 2b).

The adhesion of the above-mentioned adhesive layer 2a is based on the adhesive force at a normal temperature (23 ° C) (a value of a 90-degree peeling force (peel), a peeling speed of 300 mm/min), and the wafer value is fixed or a wafer is formed. In terms of recovery and the like, it is preferably 0.5 N/20 mm or less, more preferably 0.01 to 0.42 N/20 mm, and particularly preferably 0.01 to 0.35 N/20 mm. On the other hand, it is preferred that the adhesive layer 2b has an adhesive force of about 0.5 to 20 N/20 mm. Even if the adhesive layer 2a has a low peeling adhesive force, generation of a flyer or the like due to the adhesive force of the adhesive layer 2b can be suppressed, and sufficient holding force can be exhibited during wafer processing.

A method of making the adhesive force different in the surface of the adhesive layer 2 is, for example, a radiation curable adhesive. When the adhesive layer 2 is partially irradiated with radiation by using a radiation-curable adhesive, the degree of crosslinking of the polymer compound constituting the irradiated portion can be increased, and as a result, the adhesive strength can be lowered. Therefore, in the present embodiment, the adhesive layer 2a is irradiated with radiation to be hardened, and the adhesive force can be remarkably lowered. On the other hand, the adhesive layer 2b is not irradiated with radiation, and a sufficient adhesive force can be maintained. Thereby, the adhesive layer 2 can support the adhesive layer 3 for wafer bonding in such a manner that the adhesion and the peeling balance are good. In other words, the adhesive layer 2b can be sufficiently adhered to the adhesive layer 3 for bonding the wafer, and the adhesive layer 2a can be easily peeled off from the adhesive layer 3 for bonding the wafer, thereby improving the pick-up property. .

The adhesive constituting the adhesive layer 2 is not particularly limited, and is preferably the above-mentioned radiation-curable adhesive of the present invention. This is because the difference in adhesion between the adhesive layer 2a and the adhesive layer 2b is liable to occur. The radiation-curable adhesive can easily reduce the adhesion by irradiating ultraviolet rays or the like to increase the degree of crosslinking. Therefore, the adhesive layer 2a corresponding to the workpiece attaching portion 3a can be irradiated with radiation to be hardened, and can be easily performed in a region where the adhesive force is remarkably lowered. Since the workpiece attaching portion 3a of the adhesive bonding layer 3 for wafer bonding is located on the adhesive layer 2a which is hardened and has a reduced adhesive force, the interface between the adhesive layer 2a and the workpiece attaching portion 3a has a property of being easily peeled off at the time of picking up. .

On the other hand, since the adhesive layer 2b which is not irradiated with radiation is composed of an uncured radiation-curable adhesive, it has sufficient adhesive force. For this reason, the adhesive layer 2b and the adhesive layer 3 for adhesion to the wafer can be surely adhered, and as a result, as a whole of the adhesive layer 2, it is ensured that the adhesive for the wafer bonding can be sufficiently fixed even when the crystal is cut. The retention of layer 3. The adhesive layer 2 comprising such a radiation-curable adhesive can be used for fixing a wafer-like workpiece (a semiconductor wafer or the like) to a substrate or a wafer-like workpiece or the like by means of a good bonding and peeling balance (semiconductor The balance of the adhesive layer 3 for wafer bonding on the component).

The adhesive constituting the adhesive layer 2 is not particularly limited, and is preferably a radiation-curable adhesive of the present invention. As the radiation-curable adhesive, those having a radiation curable property such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation.

For the radiation-sensitive adhesive, for example, a radiation-curable single-purpose adhesive is added to a general pressure-sensitive adhesive such as the above-mentioned acrylic adhesive, rubber adhesive, polyoxynoxy adhesive, or polyvinyl ether adhesive. An addition type radiation curable adhesive of a body component or an oligomer component. The pressure-sensitive adhesive is not suitable for the clean cleaning property of an ultra-pure water such as a semiconductor wafer or a contaminated electronic component such as glass or an organic solvent such as an alcohol, and the acrylic polymer is preferably used as a base polymer ( Base polymer) acrylic adhesive.

Examples of the acrylic polymer include alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, and third). Butyl ester, amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecane The alkyl group, the tridecyl ester, the tetradecyl ester, the hexadecyl ester, the octadecyl ester, the eicosyl ester and the like have a carbon number of 1 to 30, especially a carbon number of 4~ One or two or more kinds of a linear or branched alkyl ester of 18 or a cycloalkyl (meth)acrylate (for example, a cyclopentyl ester or a cyclohexyl ester) are used as a monomer component. Acrylic polymer, etc. Further, (meth) acrylate means acrylate and/or methacrylate, and the meaning of (meth) in the present invention is the same.

The acrylic polymer is intended to be modified by a cohesive force or a heat resistance, and may contain other monomer components copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester, if necessary. unit. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, methylidene succinic acid, maleic acid, and fumaric acid. a monomer having a carboxyl group such as crotonic acid; an acid anhydride monomer such as maleic anhydride or methyl succinic anhydride; 2-hydroxyethyl (meth)acrylate; 2-hydroxypropyl (meth)acrylate; 4-hydroxybutyl methacrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, (meth) acrylate 12- a hydroxyl group-containing monomer such as hydroxydodecyl ester or (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, acrylsulfonic acid, 2-(methyl) acrylamide-2 - a sulfonic acid group-containing monomer such as methyl propanesulfonic acid, (meth) acrylamide propyl sulfonic acid, (meth) propyl propyl acrylate or (meth) propylene phthaloxy naphthalene sulfonic acid; a monomer containing a phosphate group such as 2-hydroxyethyl oxyphosphate; acrylamide or acrylonitrile. These monomer components which can be copolymerized may be used alone or in combination of two or more. The amount of these copolymerizable monomers used is preferably less than or equal to 40% by weight of the total monomer component.

Further, since the acrylic polymer is crosslinkable, a polyfunctional monomer or the like may be contained as a monomer component for copolymerization as necessary. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)glycerol di(meth)acrylate. , neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(methyl) Acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The polyfunctional monomer is preferably used in an amount of not less than 30% by weight based on the total monomer component, from the viewpoint of adhesion characteristics and the like.

The preparation of the above-mentioned acrylic polymer can be carried out, for example, by a suitable method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method or a suspension polymerization method, for a mixture of one or two or more kinds of component monomers. In terms of preventing the contamination of the wafer, the adhesive layer preferably suppresses the composition of the low molecular weight substance. In terms of related aspects, it is preferred to have a weight average molecular weight of 300,000 or more, especially 400,000. The ~3 million acrylic polymer is used as a main component, and therefore, the adhesive can be formed into a suitable crosslinking type by internal crosslinking or external crosslinking.

Moreover, in order to control the crosslinking density of the adhesive layer 2, for example, a polyfunctional isocyanate compound, an epoxy compound, a melamine compound, a metal salt compound, a metal chelate compound, or an amine resin compound can be used. a method of crosslinking treatment by a suitable external crosslinking agent such as a peroxide; or mixing a low molecular compound having two or more carbon-carbon double bonds, and crosslinking treatment by energy ray irradiation or the like Ways such as the appropriate way. In the case of using an external crosslinking agent, the amount thereof can be appropriately determined by the balance with the raw material polymer to be crosslinked, and further depending on the intended use of the adhesive. In general, it is preferred to add about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, per 100 parts by weight of the above-mentioned base polymer. Further, in addition to the above components, additives such as various adhesion-imparting agents and anti-aging agents may be used as needed in the adhesive.

Examples of the radiation curable monomer component to be added include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, and tetramethylol methane tetra (meth) acrylate. Ester, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol II (Meth) acrylate, etc.

In addition, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and the molecular weight thereof is from 100 to 30,000. Those in the range of left and right are more suitable. The amount of the radiation-curable monomer component or the oligomer component to be added may be appropriately determined depending on the type of the pressure-sensitive adhesive layer. In general, the raw material polymer such as the acrylic polymer constituting the adhesive is, for example, 5 to 500 parts by weight, preferably about 70 to 150 parts by weight.

Further, the radiation curable adhesive may be an intrinsic type of radiation hardening which is used in a polymer side chain or a main chain or has a carbon-carbon double bond at the end of the main chain, in addition to the above-mentioned addition type radiation curable adhesive. The type of adhesive acts as a base polymer. The intrinsic type radiation curable adhesive does not need to contain a low molecular component oligomer component or the like, or contains little, and the oligomer component does not move in the adhesive over time, and a stable layer structure can be formed. The adhesive layer is better.

The above-mentioned base polymer having a carbon-carbon double bond can be used without any particular limitation, and has a carbon-carbon double bond and has adhesiveness. Such a raw material polymer preferably has an acrylic polymer as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

The method of introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. In terms of molecular design, the carbon-carbon double bond can be easily introduced into the polymer side chain. For example, a monomer having a functional group may be copolymerized on an acrylic polymer in advance, and a functional group having a carbon-carbon double bond capable of reacting with the functional group may be used to maintain a carbon-carbon double. A method of performing a condensation or an addition reaction in a state in which the bond is radiation-hardening.

Examples of the combination of these functional groups include a carboxyl group, an epoxy group, a carboxyl group and an aziridine group, a hydroxyl group and an isocyanate group. Even in the combination of these functional groups, a combination of a hydroxyl group and an isocyanate group is suitable in terms of ease of reaction tracking. Further, in the case where a combination of these functional groups is used to form a combination of the acrylic polymer having the above carbon-carbon double bond, the functional group may be either an acrylic polymer or the above compound, but it is preferably the above. In the combination, it is preferred that the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group. In this case, the isocyanate compound having a carbon-carbon double bond may, for example, be methacryloyl isocyanate, 2-methylpropenyloxyethyl isocyanate or iso-isopropenyl isocyanate. -α,α-dimethylbenzyl ester and the like. Further, as the acrylic polymer, an ether compound containing the above-exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether can be used. Co-aggregator.

The intrinsic radiation curable adhesive may be a raw material polymer (especially an acrylic polymer) having the above carbon-carbon double bond, but may be added to the radiation curable monomer component to the extent that the properties are not impaired. Or oligomer component. The raw material polymer radiation curable oligomer component or the like in 100 parts by weight is usually in the range of 30 parts by weight or less, preferably in the range of 0 to 10 parts by weight.

When the radiation curable adhesive is cured by ultraviolet rays or the like, it contains a photopolymerization initiator. Examples of the photopolymerization initiator include 4-(2-hydroxyethoxy)phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-methylacetophenone, and 2- An α-ketone compound such as methyl-2-hydroxypropiophenone or 1-hydroxyhexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2, 2 -Ethyl acetophenone, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-[4-(methylthio)-phenyl]-2-morpholinylpropane-1 and other acetophenone compounds a benzoin ether compound such as benzoin ethyl ether, benzoin isopropyl ether or anisole; an α-ketone compound such as 2-methyl-2-hydroxypropiophenone or a ketal compound such as benzyldimethylketal; An aromatic sulfonium chloride compound such as naphthosulfonium chloride; a photoactive lanthanide compound such as 1-phenol-1,1-propanedione-2-(m-ethoxycarbonyl)anthracene; benzophenone and benzamidine; a benzophenone compound such as benzoic acid or 3-3'-dimethyl-4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone , 2,4-dimethylthioxanthone, isopropylthioxanthone, 2 , 4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone and other thioxanthone compounds; camphoroquinone; halogenated ketone; decyl phosphine Acylphosphinoxyde; acylphosphinate and the like. The amount of the photopolymerization initiator added is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

In addition, the radiation-curable adhesive for forming the adhesive layer 2 is, for example, an addition polymerization having two or more unsaturated bonds, as disclosed in Japanese Laid-Open Patent Publication No. Sho 60-196956. Polymeric compound such as a compound or an alkoxysilane having an epoxy group; and a rubber-based adhesive or acrylic adhesive of a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine or a phosphonium salt compound; Agents, etc. Examples of the addition polymerizable compound having two or more unsaturated bonds described above include acrylic acid or methacrylic polyol esters or oligoesters, epoxy or urethane compounds.

In general, the photopolymerizable compound or the photopolymerization initiator is added in an amount of 10 to 500 parts by weight, preferably 0.05 to 20 parts by weight, per 100 parts by weight of the base polymer. In addition to these added components, an epoxy functional crosslinking agent having one or two or more epoxy groups in a molecule such as ethylene glycol diglycidyl ether may be additionally added as needed to improve crosslinking of the adhesive. effect.

In the adhesive layer 2 using the radiation curable adhesive, a compound colored by radiation irradiation may be contained as needed. The adhesive layer 2 can be colored with a colored compound by radiation irradiation, and only the portion irradiated with radiation can be colored. Thereby, for example, the adhesive layer 2a corresponding to the workpiece attaching portion 3a can be colored. As a result, it is possible to directly recognize whether or not the adhesive layer 2 is irradiated with radiation by visual observation, thereby easily identifying the workpiece attaching portion 3a and easily adhering the workpiece. Further, when the semiconductor element is detected by a photo sensor or the like, the detection accuracy is improved, and an erroneous operation is not caused when the semiconductor element is picked up.

The compound colored by radiation irradiation is colorless or pale before irradiation with radiation, and is a colored compound by radiation irradiation. A preferred specific example of the related compound is exemplified by a leuco dye. As the leuco dye, a commonly used triphenylmethane system, a fluorescent yellow fluoran system, a phenothiazine system, a golden amine (Auramine) system, or a spiropyran system can be preferably used. Specifically, 3-[N-(p-tolylamino)]-7-phenylamine fluorescent yellow precursor, 3-[N-(p-tolyl)-N-methylamino]-7-aniline can be cited. Fluorescent yellow mother, 3-[N-(p-tolyl)-N-ethylamino]-7-aniline fluorescent yellow precursor, 3-diethylamino-6-methyl-7-aniline fluorescent Yellow mother, crystal violet lactone, 4,4',4"-tris(dimethylamino)triphenylmethanol, 4,4',4"-tris(dimethylamino) Triphenylmethane and the like.

Examples of the color developing agent which is preferably used together with these leuco dyes include an initial polymer of a phenol formaldehyde resin used previously, an aromatic carboxylic acid derivative, and an electron acceptor such as an active white. Further, in the case of changing the color tone, various couplers may be used in combination.

The coloring compound irradiated by the radiation may be contained in the radiation curable adhesive after being dissolved in the organic solvent or the like, or may be contained in the adhesive layer 2 in a fine powder form. Preferably, the compound is used in an amount of from 0.01 to 10% by weight, preferably from 0.5 to 5% by weight, based on the adhesive layer 2. When the ratio of the compound exceeds 10% by weight, the radiation irradiated to the adhesive layer 2 is absorbed by the compound, so that the curing of the adhesive layer 2a may be insufficient, and the adhesive strength may not be sufficiently lowered. On the other hand, when the compound ratio is less than 0.01% by weight, the adhesive sheet may not be sufficiently colored during radiation irradiation, and erroneous operation may occur during picking up of the semiconductor element.

In the case where the adhesive layer 2 is formed by the radiation-curable adhesive, the radiation-curable adhesive layer 2 is formed on the support substrate 1, and the portion corresponding to the workpiece attachment portion 3a is partially A method of irradiating radiation to harden it to form the adhesive layer 2a. The partial radiation irradiation can be performed via a photomask that forms a pattern corresponding to a portion (3b or the like) other than the workpiece attachment portion 3a. Moreover, the method of hardening and irradiating an ultraviolet-ray by a spot is mentioned. The formation of the radiation-curable adhesive layer 2 can be carried out by transferring to the support substrate 1 by a person provided on a seperator. Partial radiation hardening can also be performed on the radiation hardening type to the adhesive layer 2 provided on the separation body.

Further, when the adhesive layer 2 is formed by the radiation-curable adhesive, all or a part of the portion other than the portion corresponding to the workpiece attachment portion 3a of at least one side of the support substrate 1 may be shaded. After the radiation-curable adhesive layer 2 is formed, radiation is irradiated thereon, and the portion corresponding to the workpiece attaching portion 3a is hardened, whereby the adhesive layer 2a having a reduced adhesive force can be formed. The light-shielding material can be formed by being used as a mask on the support film, and can be formed by printing or vapor deposition. According to this manufacturing method, the crystal-cut and sticky wafer of the present invention can be efficiently produced.

Further, in the case where the hardening is inhibited by oxygen upon irradiation with radiation, it is preferred to isolate oxygen (air) from the surface of the radiation-curable adhesive layer 2 by some methods. For example, a method of coating the surface of the pressure-sensitive adhesive layer 2 with a separator or a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere may be mentioned.

The thickness of the adhesive layer 2 is not particularly limited, and is preferably about 1 to 50 μm in terms of preventing the wafer from being cut and the adhesive layer being fixed. It is preferably 2 to 30 μm, more preferably 5 to 25 μm.

The adhesive bonding layer 3 for wafer bonding has a function of supporting the workpiece (semiconductor wafer or the like) pressed on the layer in a wafer shape, and adhering to the workpiece to support the wafer; When a workpiece cut piece (a semiconductor wafer or the like) is used, it functions as an adhesive layer of the cut piece and the substrate or the wafer-shaped workpiece cut piece. It is particularly important that the adhesive layer 3 for wafer bonding has adhesiveness to such an extent that the cut piece does not scatter when the workpiece is cut.

The adhesive bonding layer 3 for wafer bonding can be formed by a usual wafer bonding agent. The wafer adhesive is preferably one which can be formed into a sheet. As the material of the wafer adhesive, specifically, for example, a thermoplastic resin or a thermosetting resin can be suitably used. These materials may be used alone or in combination of two or more. Further, it is preferable that the adhesive layer 3 for bonding the wafer adheres to a workpiece such as a semiconductor wafer or a dicing ring at 70 ° C or lower. Even better is the adhesive at room temperature.

Examples of the thermoplastic resin (thermoplastic die attaching agent) used as the wafer bonding agent include a saturated polyester resin, a thermoplastic polyurethane resin, a guanamine resin (nylon resin), and ruthenium. An imide resin or the like. Further, examples of the thermosetting resin (thermosetting film adhesive) include an epoxy resin, an unsaturated polyester resin, a thermosetting acrylic resin, and a phenol resin. The thermosetting resin is preferably a thermosetting resin which is desolvated, flaky, and B-staged. Further, a mixture of these thermosetting resins and a thermoplastic resin can also be used in the state of step B. Further, in the present invention, a resin such as a polyfluorene-based, rubber-based, urethane-based, quinone-imide-based or acrylic-based resin having a high glass transition temperature can also be used as the wafer bonding agent.

Further, in the adhesive layer 3 for bonding the wafer, a conductive material (conductive filler) may be added for the purpose of imparting conductivity and improving thermal conductivity. Examples of the conductive material include spherical, needle-like, sheet-like metal powders such as silver, aluminum, gold, copper, nickel, and conductive alloys, metal oxides such as alumina, amorphous carbon black, and graphite.

The adhesive layer 3 for bonding the wafer may have a multilayer structure having two or more layers by appropriately combining a thermoplastic resin having a different glass transition temperature and a thermosetting resin having a different heat curing temperature. In addition, since the cutting water is used in the dicing step of the workpiece (semiconductor wafer or the like), the adhesive layer 3 for wafer bonding absorbs moisture and reaches a water content of a normal state or higher. If it adheres directly to a substrate or the like at such a high water content, it exists in an aftercure stage, and water vapor is accumulated in the adhesion interface, and a bubble is generated. Therefore, the adhesive for bonding a wafer is constituted by sandwiching a film having a high moisture permeability with a wafer adhesive. Thereby, in the post-treatment stage, water vapor can diffuse through the film, thereby avoiding related problems. Therefore, the adhesive layer 3 for bonding the wafer may have a multilayer structure in which an adhesive layer, a film, and an adhesive layer are sequentially laminated.

The adhesive bonding layer 3 for wafer bonding has a function of protecting a workpiece (semiconductor wafer or the like) during die cutting, and bonding and fixing a wafer-shaped workpiece cutting piece (semiconductor wafer or the like) to the substrate to be adhered. The function of the connector. The thickness thereof is not particularly limited and is, for example, 1 to 100 μm, preferably 3 to 70 μm, more preferably 5 to 50 μm.

The adhesion layer 3 for bonding the wafer, the adhesion of the workpiece to the workpiece attaching portion 3a and the adhesion to the adhesive layer 2a are preferably designed to have a greater adhesion to the workpiece than to the adhesive layer 2a. force. The adhesion to the workpiece can be adjusted according to the type of the workpiece.

The adhesion of the workpiece attaching portion 3a to the adhesive layer 2a (the value of the 90-degree peeling force (peel), the peeling speed of 300 mm/min), as described above, is preferably 0.5 N/20 mm or less. Good is 0.01~0.42 N/20 mm, especially preferably 0.01~0.35 N/20 mm. On the other hand, the adhesion to the workpiece of the workpiece attaching portion 3a (the same condition as described above) is preferably 10 or less in terms of dicing, picking, reliability at the time of sticking the wafer, and pick-up property. ~50 N/20 mm, more preferably 10~30 N/20 mm.

In the case where a dicing ring (wafer ring) is used for cutting a semiconductor wafer as a workpiece, the diced or viscous wafer of the present invention may have the following structure. Fig. 3 is a schematic cross-sectional view showing another example of the diced or bonded wafer of the present invention. 4 is a plan view showing a state in which a semiconductor wafer and a dicing ring are attached to a diced, bonded wafer. As shown in FIG. 3, the die-cut and adhesive wafer 11 has an adhesive layer 2' on the support substrate 1, and a die bonding adhesive layer 3' on the adhesive layer 2'. The die bonding adhesive layer 3' is provided with a dicing ring attaching portion 3b' on a portion of the above portion 3b. Further, a portion 2b' (referred to as an adhesive layer 2b') corresponding to the dicing ring attaching portion 3b' is provided on the adhesive layer 2'. Further, in the adhesive layer 2', the peeling force of the interface B' between the cleavage ring attaching portion 3b' and the adhesive layer 2b' formed corresponding thereto is such that the peeling force of the interface A is larger than the peeling force of the interface B' Relationship. Further, in the adhesive layer 2 of Fig. 2, all of the adhesive layer 2a other than the adhesive layer 2a is the adhesive layer 2b. However, as shown in Fig. 3, a part other than the adhesive layer 2a may be used as the adhesive layer 2b'.

In the case where the portion other than the workpiece attaching portion 3a is used as the dicing ring attaching portion 3b' in the dicing wafer or the adhesive wafer 11, the dicing ring attaching portion 3b of the adhesive layer 3' for the wafer bonding is used. In the case, the adhesion to the dicing ring and the adhesion to the adhesive layer 2b' are preferably designed such that the adhesion to the dicing ring is less than the adhesion to the adhesive layer 2b'. The adhesion to the cleavage ring can be appropriately adjusted according to the type of cleavage ring.

The adhesion to the adhesive layer 2b' of the adhesive layer 3' for the wafer bonding (the same conditions as described above) is preferably about 0.5 to 20 N/20 mm as described above. On the other hand, the adhesion to the dicing ring of the adhesive layer 3' for the wafer bonding (the same condition as described above) is preferably 0.3 or less in terms of dicing and operability in the case of die bonding. 5 N/20mm, more preferably 0.5~5N/20mm.

In the adhesive layer 2', the adhesive layer 2a corresponding to the workpiece attaching portion 3a and the adhesive layer 2b' other than the adhesive layer 2b are designed such that the adhesive force of the adhesive layer 2a is smaller than that of the adhesive layer 2b'. The adhesion to the adhesive layer 2a of the workpiece attaching portion 3a (the same condition as described above) is preferably 0.5 N/20 mm or less, more preferably 0.01 to 0.42 N/20 mm, as described above, particularly preferably. It is 0.01~0.35 N/20 mm.

The dicing die or the adhesive wafer of the present invention can also be formed by providing a structure for bonding the adhesive layer for wafer bonding only on the portion of the adhesive layer 2 to which the workpiece is bonded. Fig. 5 is a schematic cross-sectional view showing still another example of the dicing crystal and the die-bonding film of the present invention. As shown in the figure, the dicing wafer 12 has a structure in which an adhesive layer 2 is provided on a support substrate 1, and an adhesive layer 3" for bonding the wafer is provided on the adhesive layer 2.

The adhesion to the adhesive layer 2a of the adhesive layer 3" for the wafer bonding (under the same conditions as described above) is preferably 0.5 N/20 mm or less, more preferably 0.01 to 0.42 N as described above. /20 mm, particularly preferably 0.01 to 0.35 N/20 mm. On the other hand, the adhesion of the workpiece to the adhesion bonding layer 3" of the wafer (under the same conditions as described above) is picked up and picked up. In terms of time, reliability, and pick-up property, it is preferably 10 to 50 N/20 mm or less, more preferably 10 to 30 N/20 mm.

The die bonding adhesive layers 3 and 3" for the die-cutting and adhesive wafers 10 to 12 can also be protected by the protective layer 4. That is, the protective layer 4 can be arbitrarily provided. The protective layer 4 has a protective adhesive for bonding the wafer. The function of the adhesive layer 3, 3" as a protective material for practical use. Further, the protective layer 4 can be further used as a supporting substrate when the adhesive layer 3, 3a for wafer bonding is transferred onto the adhesive layer 2. The protective layer 4 can be peeled off when the workpiece is adhered to the die bonding adhesive layer 3, 3" of the die-bonding and adhesive wafers 11 to 12. The protective layer 4 can be exemplified by polyethylene, polypropylene or surface coating. A plastic film or paper coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent.

The dicing and adhesive wafers 10 to 12 of the present invention can be suitably peeled off any of the separators provided on the adhesive layer 3, 3" for bonding the wafer, and used in the following manner. The workpiece is bonded to the 10~12 wafer bonding adhesive layer 3a (3"), and the bonding is held and fixed. Crimp can be performed by a usual method. For the bonded workpiece, for example, a semiconductor wafer, a multilayer substrate, an integral sealing module, or the like can be used. In the present invention, a semiconductor wafer can be suitably used for the bonded body or the workpiece.

Then, as shown in FIG. 6, the workpiece is cut into a wafer shape. The same figure shows a cross-sectional pattern of a crystal cut. The dicing can be performed at least until the wafer bonding adhesive layer 3 (3', 3") is completely cut. For the adhesive layer 2 (2'), the cutting depth can be reached until the cutting depth is reached by a predetermined value. The support substrate 1 is not reached. Examples of the workpiece include a semiconductor wafer, a multilayer substrate, an integral sealing module, etc. The dicing is also performed by a suitable method such as rotating a round blade or the like. The workpiece inside the adhesive layer 3 is formed into a wafer-like workpiece (semiconductor wafer or the like).

Then, the workpiece-attached portion 3a (or the wafer-bonding adhesive layer 3") of the wafer-like workpiece and the wafer-adhesive adhesive layer 3 is peeled off from the adhesive layer 2a of the adhesive layer 2 together. The wafer-shaped workpiece to be picked up is bonded and fixed to the semiconductor element as the adherend via the workpiece attaching portion 3a or the like. The semiconductor element may be a lead frame, a TAB film, a substrate, or a separately formed wafer-like workpiece. The adhesive body may be, for example, a deformable bonded body that is easily deformed, or a non-deformable bonded body (semiconductor wafer or the like) that is difficult to deform. The bonded body is preferably a semiconductor wafer. In the case where the adhesive layer 3, 3', 3" for bonding the wafer is a thermosetting type, the workpiece can be adhered and fixed to the adherend by heat hardening, thereby improving the heat resistance. Further, the wafer-like workpiece is bonded and fixed to the substrate via the adhesive layer 3a, 3" for bonding the wafer, and is available for a reflow step.

Further, the dicing and bonding wafers 10 to 12 can have an antistatic property for the purpose of preventing static electricity generated during adhesion or peeling, or causing damage to the workpiece (semiconductor wafer or the like) and causing damage to the circuit. The antistatic ability can be imparted in a suitable manner: a method of adding an antistatic agent or a conductive substance to the support substrate 1, the adhesive layer 2, 2' or the adhesive layer 3, 3', 3" for bonding the wafer; A conductive layer such as a charge transfer composite or a metal film is attached to the support substrate 1. These methods are preferably such that impurity ions which may deteriorate the semiconductor wafer are less likely to be formed, and conductivity, heat conductivity, and the like are imparted. The conductive material (conductive filler) to be added for the purpose includes spherical, needle-like, flaky metal powder such as silver, aluminum, gold, copper, nickel, or a conductive alloy, and a metal oxide such as alumina. Crystalline carbon black, graphite, and the like.

Hereinafter, preferred embodiments of the present invention will be exemplarily described in detail. However, the materials, addition amounts, and the like described in the examples are not intended to limit the scope of the invention, but are merely a single illustrative example unless otherwise specified.

(Example 1)

On a support substrate comprising a polyethylene film having a thickness of 60 μm, a solution of an acrylic adhesive which was cured by ultraviolet rays was applied and dried to form an adhesive layer having a thickness of 20 μm. Thereafter, ultraviolet rays of 500 mJ/cm ² are irradiated only to the portion to which the wafer is attached via the mask, and an adhesive layer including the support substrate and the portion adhered to the wafer to be cured by ultraviolet rays is obtained. Adhesive film A. The method of measuring the thickness of the adhesive layer and the irradiation conditions of ultraviolet rays are as follows.

The preparation of a solution of an ultraviolet curable acrylic adhesive is as follows. Namely, 70 parts by weight of butyl acrylate, 30 parts by weight of ethyl acrylate, and 5 parts by weight of acrylic acid were copolymerized in ethyl acetate by a usual method to obtain an acrylic polymer having a weight average molecular weight of 800,000. Next, 0.5 parts by weight of a polyfunctional epoxy compound as a crosslinking agent and 20 parts by weight of dipentaerythritol monohydroxypentaacrylate as a photopolymerizable compound and 1 part by weight are added to 100 parts by weight of the acrylic polymer. As a photopolymerization initiator, α-hydroxycyclohexyl phenyl ketone was uniformly dissolved in toluene as an organic solvent to obtain an acrylic pressure-sensitive adhesive solution having a concentration of 30% by weight.

Here, the elastic modulus of the adhesive film A at 23 ° C was measured. The result was 3 × 10 ⁸ Pa. The measurement method is detailed below.

Next, an adhesive layer for wafer bonding is produced. That is, 3 parts by weight of a polyfunctional isocyanate system is used in an amount of 100 parts by weight of an acrylate-based polymer (Paracron W-197CM, manufactured by Kokusai Industrial Co., Ltd.) containing ethyl acrylate-methyl methacrylate as a main component. Crosslinking agent, 23 parts by weight of epoxy resin (made by Nippon Epoxy Co., Ltd., Epicoat 1004), 6 parts by weight of phenol resin (manufactured by Mitsui Chemicals Co., Ltd., Milex XLC-LL), dissolved in methyl ethyl In the ketone, the concentration was adjusted to 20% by weight.

This adhesive composition solution was applied onto a release-treated film containing a polyethylene terephthalate film having a thickness of 50 μm. Thereafter, it was dried at 120 ° C for 3 minutes to form a film bonding adhesive layer A having a thickness of 20 μm. Further, the release-treated film is a polyoxyxylene mold release treatment used for a polyethylene terephthalate film.

Then, the wafer bonding adhesive layer A is transferred onto the adhesive layer side of the adhesive film A containing the above acrylic adhesive to obtain the diced and bonded wafer of the present embodiment.

(Example 2)

In the present embodiment, in place of the acrylate polymer having ethyl acrylate-methyl methacrylate as a main component, a polymer containing butyl acrylate as a main component (Paracron SN-710, manufactured by Kokusai Industrial Co., Ltd.) was used. The dicing wafer or the adhesive wafer of this example was produced in the same manner as in the above-described first embodiment except that the thickness of the adhesive film A was changed to 30 μm.

(Example 3)

A solution of an ultraviolet curable acrylic adhesive was applied onto a support substrate containing a polyethylene film having a thickness of 80 μm, and dried to form an adhesive layer having a thickness of 70 μm. Thereafter, ultraviolet rays of 500 mJ/cm ² are irradiated only to the portion to which the wafer is attached via the mask, and an adhesive film B including the support substrate and the adhesive layer which is cured by ultraviolet rays on the attached portion of the wafer is obtained. . The ultraviolet irradiation conditions are as follows.

The preparation of a solution of an ultraviolet curable acrylic adhesive is as follows. That is, an additive composition containing 50 parts by weight of ethyl acrylate, 50 parts by weight of butyl acrylate, and 16 parts by weight of 2-hydroxyethyl acrylate was copolymerized in a toluene solution to obtain a weight average molecular weight of 500,000. Acrylic polymer.

Next, 20 parts by weight of 2-methylpropenyloxyethyl isocyanate was subjected to an addition reaction with respect to 100 parts by weight of the acrylic polymer, and a carbon-carbon double bond was introduced into the inner chain of the polymer molecule. The side chain is 13 atoms in length. Further, 1 part by weight of a polyfunctional isocyanate crosslinking agent and 3 parts by weight of an acetophenone-based photopolymerization initiator are added to 100 parts by weight of the polymer, and these are uniformly dissolved in toluene as an organic solvent. The above acrylic adhesive solution having a concentration of 20% by weight was obtained.

Here, the elastic modulus of the adhesive film B at 23 ° C was measured. The result was 4 × 10 ⁷ Pa. Furthermore, the measurement method is described in detail below.

Next, the adhesive layer A for wafer bonding was produced in the same manner as in the above Example 1 except that the thickness was changed to 10 μm. Then, the adhesive layer A for bonding the wafer is transferred to the side of the adhesive layer on the adhesive film B containing the acrylic adhesive, and the diced or bonded wafer of the present embodiment is obtained.

(Comparative Example 1)

A diced or bonded wafer of this comparative example was produced in the same manner as in Example 1 except that the thickness of the adhesive layer was changed to 100 μm.

(Comparative Example 2)

A diced or bonded wafer of this comparative example was produced in the same manner as in the above Example 3 except that the thickness of the adhesive layer was changed to 3 μm.

(Comparative Example 3)

A solution of an ultraviolet curable acrylic adhesive was applied to a support substrate comprising a polyethylene film having a thickness of 60 μm, and dried to form an adhesive layer having a thickness of 30 μm. Thereafter, ultraviolet rays of 500 mJ/cm ² are irradiated only to the portion to which the wafer is attached via the mask, and an adhesive film C including the support substrate and the ultraviolet-cured adhesive layer attached to the wafer is obtained. . The ultraviolet irradiation conditions are described below.

The preparation of a solution of an ultraviolet curable acrylic adhesive is as follows. That is, a monomer mixture containing 100 parts by weight of butyl acrylate and 2 parts by weight of acrylic acid, using 200 parts by weight of toluene and 0.1 part by weight of azoisobutyronitrile, copolymerization by a usual method to obtain a weight average molecular weight It is about 300,000 acrylic polymers. Next, 0.5 parts by weight of a polyfunctional epoxy compound as a crosslinking agent and 5 parts by weight of dipentaerythritol monohydroxypentaacrylate as a photopolymerizable compound and 1 part by weight are added to 100 parts by weight of the acrylic polymer. As a photopolymerization initiator, α-hydroxycyclohexyl phenyl ketone was uniformly dissolved in toluene as an organic solvent to obtain a 30% by weight of the above acrylic pressure-sensitive adhesive solution.

Here, the elastic modulus of the adhesive film C at 23 ° C was measured. The result was 7 × 10 ⁵ Pa. Furthermore, the measurement method is described in detail below.

A diced or bonded wafer of this comparative example was produced in the same manner as in Example 1 except that the thickness of the adhesive layer was set to 1 μm.

(Comparative Example 4)

A solution of an ultraviolet curable acrylic adhesive was applied to a support substrate comprising a polyethylene film having a thickness of 60 μm, and dried to form an adhesive layer having a thickness of 30 μm. Thereafter, ultraviolet rays of 500 mJ/cm ² were irradiated only to the portion to which the wafer was attached via the mask, and an adhesive film D including the support substrate and the adhesive layer which was cured by ultraviolet rays on the portion to which the wafer was attached was obtained. The ultraviolet irradiation conditions are described below.

The preparation of a solution of an ultraviolet curable acrylic adhesive is as follows. That is, by using 200 parts by weight of toluene and 0.1 part by weight of azoisobutyronitrile, copolymerization is carried out by a usual method with a monomer mixture containing 100 parts by weight of methyl methacrylate and 5 parts by weight of acrylic acid to obtain a weight. An acrylic polymer having an average molecular weight of 400,000. Next, in 100 parts by weight of the acrylic polymer, 3 parts by weight of a polyfunctional epoxy compound is added as a crosslinking agent, and 30 parts by weight of dipentaerythritol monohydroxypentaacrylate is used as a photopolymerizable compound, and 3 parts by weight. As a photopolymerization initiator, α-hydroxycyclohexyl phenyl ketone was uniformly dissolved in methanol as an organic solvent to obtain a 30% by weight of the above acrylic pressure-sensitive adhesive solution.

Here, the elastic modulus of the adhesive film D at 23 ° C was measured. As a result 8 × 10 ^{1 0} Pa. Furthermore, the measurement method is described in detail below.

Then, using the adhesive film D, the diced and bonded wafer of this comparative example was produced in the same manner as in the above-described first embodiment.

(Example 4)

A solution of an ultraviolet curable acrylic adhesive was applied onto a support substrate comprising a polyethylene film having a thickness of 60 μm, and dried to form an adhesive layer having a thickness of 10 μm. Thereafter, ultraviolet rays of 500 mJ/cm ^{2 were} irradiated only to the portion to which the wafer was attached via the mask, and the adhesive film a including the support substrate and the adhesive layer which was cured by ultraviolet rays on the portion to which the wafer was attached was obtained. The method for measuring the thickness of the adhesive layer and the ultraviolet irradiation conditions are as follows.

The preparation of a solution of an ultraviolet curable acrylic adhesive is as follows. Namely, 70 parts by weight of butyl acrylate, 30 parts by weight of ethyl acrylate, and 5 parts by weight of acrylic acid were copolymerized in ethyl acetate by a usual method to obtain an acrylic polymer having a weight average molecular weight of 800,000. Next, 0.5 parts by weight of a polyfunctional epoxy compound as a crosslinking agent and 20 parts by weight of dipentaerythritol monohydroxypentaacrylate as a photopolymerizable compound and 1 part by weight are added to 100 parts by weight of the acrylic polymer. As a photopolymerization initiator, α-hydroxycyclohexyl phenyl ketone was uniformly dissolved in toluene as an organic solvent to obtain an acrylic pressure-sensitive adhesive solution having a concentration of 18% by weight.

Here, the elastic modulus of the adhesive film a at 23 ° C was measured. The result was 8 × 10 ⁶ Pa. Furthermore, the measurement method is described in detail below.

Next, an adhesive layer for wafer bonding is produced. That is, 3 parts by weight of a polyfunctional isocyanate system is used in an amount of 100 parts by weight of an acrylate-based polymer (Paracron W-197CM, manufactured by Kokusai Industrial Co., Ltd.) containing ethyl acrylate-methyl methacrylate as a main component. Crosslinking agent, 23 parts by weight of epoxy resin (made by Nippon Epoxy Co., Ltd., Epicoat 1004), 6 parts by weight of phenol resin (manufactured by Mitsui Chemicals Co., Ltd., Milex XLC-LL), dissolved in methyl ethyl In the ketone, the concentration was adjusted to 20% by weight.

This adhesive composition solution was applied onto a release-treated film containing a film of ethylene terephthalate having a thickness of 50 μm. Thereafter, the film was dried at 120 ° C for 3 minutes to form a film bonding adhesive layer a having a thickness of 20 μm. Further, the release-treated film is a polyoxyxylene mold release treatment used on a polyethylene terephthalate film.

Then, the adhesive layer a for bonding the wafer is transferred onto the adhesive layer on the adhesive film A containing the acrylic adhesive to obtain a diced or bonded wafer of the present embodiment.

(Example 5)

In the present embodiment, an acrylate-based polymerization using ethyl acrylate-methyl methacrylate as a main component was used in addition to a polymer using butyl acrylate as a main component (Paracron SN-710, manufactured by Kokusai Industrial Co., Ltd.). The dicing and bonding wafer of this example was produced in the same manner as in the above-described Example 4 except that the thickness of the adhesive layer was changed to 30 μm.

(Example 6)

A solution of an ultraviolet curable acrylic adhesive was applied onto a support substrate comprising a polyethylene film having a thickness of 80 μm, and dried to form an adhesive layer having a thickness of 70 μm. Thereafter, ultraviolet rays of 500 mJ/cm ² were irradiated only to the portion to which the wafer was attached via the mask, and an adhesive film b including the support substrate and the adhesive layer which was cured by ultraviolet rays on the portion to which the wafer was attached was obtained. The ultraviolet irradiation conditions are as follows.

The preparation of a solution of an ultraviolet curable acrylic adhesive is as follows. That is, an additive composition containing 50 parts by weight of ethyl acrylate, 50 parts by weight of butyl acrylate, and 16 parts by weight of 2-hydroxyethyl acrylate was copolymerized in a toluene solution to obtain a weight average molecular weight of 500,000. Acrylic polymer.

Next, 20 parts by weight of 2-methylpropenyloxyethyl isocyanate was subjected to an addition reaction with respect to 100 parts by weight of the acrylic polymer, and a carbon-carbon double bond was introduced into the inner chain of the polymer molecule. The side chain is 13 atoms in length. Further, 1 part by weight of a polyfunctional isocyanate crosslinking agent and 3 parts by weight of an acetophenone-based photopolymerization initiator are added to 100 parts by weight of the polymer, and these are uniformly dissolved in toluene as an organic solvent. The above acrylic adhesive solution having a concentration of 27% by weight was obtained.

Here, the elastic modulus of the adhesive film b at 23 ° C was measured. The result was 3 × 10 ⁵ Pa. Furthermore, the measurement method is described in detail below.

Then, the adhesive layer a for wafer bonding was produced in the same manner as in the above-described Example 4, and then the adhesive layer a for bonding the wafer was transferred to the adhesive film A containing the acrylic adhesive. On the side of the agent layer, the diced, sticky wafer of the present embodiment was obtained.

(Comparative Example 5)

A diced or bonded wafer of this comparative example was produced in the same manner as in the above Example 4 except that the thickness of the adhesive layer was changed to 100 μm.

(Comparative Example 6)

A solution of an ultraviolet curable acrylic adhesive was applied to a support substrate comprising a polyethylene film having a thickness of 60 μm, and dried to form an adhesive layer having a thickness of 30 μm. Thereafter, ultraviolet rays of 500 mJ/cm ² were irradiated only to the portion to which the wafer was attached via the mask, and an adhesive film c including the support substrate and the adhesive layer which was cured by ultraviolet rays on the portion to which the wafer was attached was obtained. The ultraviolet irradiation conditions are as follows.

The preparation of a solution of an ultraviolet curable acrylic adhesive is as follows. That is, 200 parts by weight of toluene and 0.1 part by weight of azoisobutyronitrile were used in the usual manner to copolymerize with a monomer mixture containing 100 parts by weight of methyl acrylate and 2 parts by weight of acrylic acid to obtain a weight average molecular weight of 300,000 acrylic polymers. Next, 0.5 parts by weight of a polyfunctional epoxy compound as a crosslinking agent and 5 parts by weight of dipentaerythritol monohydroxypentaacrylate as a photopolymerizable compound and 1 part by weight are added to 100 parts by weight of the acrylic polymer. As a photopolymerization initiator, α-hydroxycyclohexyl phenyl ketone was uniformly dissolved in toluene as an organic solvent to obtain a 30% by weight of the above acrylic pressure-sensitive adhesive solution.

Here, the elastic modulus of the adhesive film c at 23 ° C was measured. The result was 3 × 10 ³ Pa. Furthermore, the measurement method is described in detail below.

Next, using the adhesive film c, the dicing and the adhesive wafer of this comparative example were produced in the same manner as in the above-described first embodiment.

(Comparative Example 7)

A solution of an ultraviolet curable acrylic adhesive was applied to a support substrate comprising a polyethylene film having a thickness of 60 μm, and dried to form an adhesive layer having a thickness of 30 μm. Thereafter, ultraviolet rays of 500 mJ/cm ² were irradiated only to the portion to which the wafer was attached via the mask, and an adhesive film d including the support substrate and the adhesive layer which was cured by ultraviolet rays on the portion to which the wafer was attached was obtained. The ultraviolet irradiation conditions are as follows.

The preparation of a solution of an ultraviolet curable acrylic adhesive is as follows. That is, 200 parts by weight of toluene and 0.1 part by weight of azoisobutyronitrile were used in the usual manner to copolymerize with a monomer mixture containing 100 parts by weight of methyl acrylate and 5 parts by weight of acrylic acid to obtain a weight average molecular weight of 400,000 acrylic polymers. Next, in 100 parts by weight of the acrylic polymer, 3 parts by weight of a polyfunctional epoxy compound is added as a crosslinking agent, and 30 parts by weight of dipentaerythritol monohydroxypentaacrylate is used as a photopolymerizable compound, and 3 parts by weight. As a photopolymerization initiator, α-hydroxycyclohexyl phenyl ketone was uniformly dissolved in methanol as an organic solvent to obtain an acrylic pressure-sensitive adhesive solution having a concentration of 27% by weight.

Here, the elastic modulus of the adhesive film d at 23 ° C was measured. As a result, 5 × 10 ^{1 0} Pa. Furthermore, the measurement method is described in detail below.

Next, using the adhesive film d, the diced and bonded wafer of this comparative example was produced in the same manner as in the above-described Example 4.

(Cutting and picking up)

Using the respective dicing and bonding wafers of Examples 1 to 6 and Comparative Examples 1 to 7, the dicing and die-bonding of the semiconductor wafer were actually performed in the following manner, and the performance of each of the diced and bonded wafers was evaluated.

A semiconductor wafer (with a diameter of 8 inches and a thickness of 0.6 mm) forming a circuit pattern was subjected to back grinding treatment, and a mirror wafer having a thickness of 0.15 mm was used as a workpiece. The polishing device was DFG-840 (trade name) manufactured by DISCO Corporation. The lens wafers were placed on respective diced and bonded wafers, and rolled and bonded at 40 ° C to perform dicing. The bonding is a wafer bonding apparatus (DR-8500) manufactured by Nitto Seiki Co., Ltd. Further, the dicing is performed in a full cut so as to be a square crystal piece having a side length of 5 mm. The presence or absence of filamentous debris was investigated for the cut semiconductor wafer, the diced wafer, and the bonded wafer. The method of observing the filamentous chips and the crystal cutting conditions are detailed below.

Next, each of the diced and bonded wafers of Examples 1 to 3 and Comparative Examples 1 to 4 was stretched, and an extension step of forming a predetermined interval between the respective wafers was performed. Further, the tantalum wafer was picked up from the side of the base material of each of the crystal-cut and sticky wafers by the needle-up method, and the flying sheet and the pick-up property were evaluated. Also, investigate whether the wafers picked up have debris. The measurement method is as follows.

[Method for Measuring Thickness of Adhesive Layer]

The thickness of the adhesive layer was measured by a 1/1000 dial gauge.

[UV irradiation conditions]

Ultraviolet (UV) irradiation device: NEL M-110 (trade name, manufactured by Nitto Seiki Co., Ltd.) UV irradiation cumulative light amount: 500 mJ/cm ²

[Method for measuring elastic modulus]

The elastic modulus was measured using a viscoelastic spectrum analyzer (trade name: RSA-II) manufactured by Rheometric. The measurement conditions were as follows: the frequency was 1 Hz, the sample thickness was 2 mm, the crimping weight was 100 g, the heating rate was 5 ° C/min, and the value was measured at 23 ° C in the range of -50 ° C to 200 ° C.

[Cutting conditions]

Cleavage device: DFD-651 (trade name, manufactured by DISCO Corporation) Cleavage speed: 80 mm/sec Cutting blade: 2050 HECC (trade name, manufactured by DISCO) Rotation number: 40,000 rpm cutting depth of dicing and bonding wafer: 15 μm (refer to Figure 6) Cutting method: full cut, A mode wafer size: 5 mm side square

[Method of observing silky chips]

The left and right three lines (the total of seven lines) including the center line of the cut semiconductor wafer are observed by an optical microscope (50 times), and the number of filament-like chips of 10 μm or more is counted (refer to FIG. 4). ). The observation of the filaments is performed on the surface and the side surface of the semiconductor wafer, and on the surface of the diced, bonded wafer with the cut line near the crucible.

[Extension condition]

Cleavage ring: 2-8-1 (trade name, manufactured by DISCO, inner diameter 19.5 cm) Excision amount: 5 mm die bonder: SPA-300 (trade name, (share) Shinkawa)

[Debris evaluation method]

After dicing, 50 arbitrary semiconductor wafers (cut bodies) were picked up (peeled), and debris on the side surface of the semiconductor wafer was observed. The wafer fragments of the triangular shape were observed as chips, and the size of 20 μm or more was counted.

[pickup evaluation]

When the cut semiconductor wafer of 5 mm × 5 mm square was picked up, it was confirmed whether or not an adhesive was adhered to the bottom surface of the semiconductor wafer. Further, at the time of picking up, the adhesive layer was left to stand under a high-pressure mercury lamp of 80 W/cm ² for 10 seconds, and then the pickup was performed. As a result, the case where the wafer was picked up without damage or defect was set to ○, and the case where damage, defect, or pickup error occurred was set to ×, and the evaluation was performed.

(result)

As is apparent from Tables 1 and 2 below, filamentous chips were not observed at all in Examples 1 to 6, and in Comparative Example 2, many filamentous chips were observed at any position.

Regarding the chips, although several were produced in Examples 3 and 4, they were in a state usable in the performance of the wafer. In Examples 1, 2, 4 and 5, no debris was generated at all, which was good. On the other hand, in Comparative Examples 1, 3, 4, 5, and 6, the generation of debris was observed, which was a state in which the performance of the wafer could not be used. Further, the generation of the flying sheet was not observed at all in all the examples, and it was confirmed that it had a sufficient adhesive force for fixing the semiconductor wafer. On the other hand, in Comparative Example 4, a plurality of flyers were observed, and it was confirmed that the adhesiveness of the adhesive layer was insufficient. Further, in the dicing and the adhesive wafer of Comparative Example 7, the dicing ring was not attached, and thus the dicing could not be performed.

As a result of such tests, it is also clear that if the adhesive layer is thin, the support substrate is cut by the dicing blade, and filamentous chips are easily generated. On the other hand, if the thickness is too thick, chips are generated, and the semiconductor grade is remarkably lowered.

1. . . Support substrate

2, 2', 2"... adhesive layer

2a. . . The part corresponding to the attached part of the workpiece

2b. . . Part or all of the part corresponding to the part attached to the workpiece

2b'. . . The part corresponding to the affixed ring attachment part

3, 3', 3"... adhesion layer for wafer bonding

3a. . . Workpiece attachment part

3b'. . . Cut ring attachment part

3b. . . Part other than the attached part of the workpiece

4. . . The protective layer

10, 11, 12. . . Sticky wafer

13. . . Cutting blade

A. . . 3a corresponding interface

B. . . 3b corresponding interface

B'. . . 3b' corresponding interface

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic cross-sectional view showing an embodiment of a diced, viscous wafer of the present invention.

FIG. 2 is a cross-sectional schematic view for explaining the relationship between the adhesive layer of the above-mentioned crystal-cut and adhesive wafer and the peeling property of the adhesive layer 3 for wafer bonding.

Figure 3 is a cross-sectional schematic view showing another embodiment of the diced, bonded wafer of the present invention.

4 is a plan view showing a state in which a semiconductor wafer and a dicing ring are attached to the above-mentioned diced and bonded wafer.

Figure 5 is a cross-sectional schematic view showing still another embodiment of the diced, bonded wafer of the present invention.

Fig. 6 is a schematic cross-sectional view showing a state in which a workpiece is crystallized into a wafer shape.

1. . . Support substrate

2. . . Adhesive layer

3. . . Adhesive layer for wafer bonding

4. . . The protective layer

10. . . Sticky wafer

Claims (15)

A diced wafer having a layer of an adhesive layer and a layer of adhesive for bonding a wafer, wherein the thickness of the adhesive layer is 10 to 80 μm at 23 ° C. The modulus of elasticity is 1 × 10 ⁴ to 1 × 10 ¹⁰ Pa. The diced, sticky wafer according to claim 1, wherein the adhesive layer is a radiation hardening adhesive layer. The dicing and adhesive wafer according to claim 1, wherein at least the portion corresponding to the attached portion of the workpiece on the adhesive layer for bonding the wafer satisfies the elastic modulus of the adhesive layer. The range of values. The dicing and adhesive wafer according to claim 3, wherein at the interface between the adhesive layer and the adhesive layer for bonding the wafer, the peeling property at the interface corresponding to the attached portion of the workpiece is greater than Peelability at the interface corresponding to some or all of the other parts. The dicing and adhesive wafer according to claim 3, wherein in the adhesive force of the adhesive layer for the adhesion layer of the adhesive layer, the adhesive portion of the corresponding portion of the workpiece attachment portion is less than The adhesion of some or all of the corresponding parts of the other parts. The dicing and adhesive wafer according to the third or fourth aspect of the patent application, wherein in the adhesive force of the adhesive layer for bonding the wafer, the adhesion to the workpiece attached to the workpiece is greater than The adhesion of the adhesive layer of the portion corresponding to the workpiece attachment portion. The dicing or adhesive wafer according to the third or fourth aspect of the patent application, wherein a part of the portion other than the attached portion of the workpiece is a dicing ring Attached to the section. The dicing and adhesive wafer according to claim 7, wherein in the adhesion of the adhesive layer for bonding the wafer, the adhesion to the dicing ring of the dicing ring attachment portion is less than The adhesion of the adhesive layer of the portion corresponding to the etched ring attachment portion. The dicing or adhesive wafer according to claim 1 or 2, wherein the adhesive layer for bonding the wafer is provided on a part of the adhesive layer as a workpiece attaching portion; In the adhesive layer, the adhesive portion of the portion corresponding to the attached portion of the workpiece is smaller than the adhesive force of the portion other than the adhesive portion. The dicing and adhesive wafer according to claim 9, wherein in the adhesive force of the adhesive layer for bonding the wafer, the adhesion to the workpiece attached to the workpiece is greater than the attachment to the workpiece The adhesion of the adhesive layer of the corresponding portion. The dicing or adhesive wafer according to the third or fourth aspect of the invention, wherein the adhesive layer is formed by a radiation hardening adhesive; the corresponding portion of the workpiece attachment portion is irradiated by radiation. Hardened state. A method of fixing a wafer-like workpiece, the method of fixing the wafer-like workpiece, using the dicing or adhesive wafer according to any one of claims 1 to 11, characterized in that the method for fixing the wafer-like workpiece The method includes the steps of: crimping a workpiece on a workpiece attaching portion of the adhesive layer for wafer bonding; and cutting the workpiece together with the adhesive layer for bonding the wafer a step of stopping the dicing in the adhesive layer in the step of forming a wafer; and a step of peeling the wafer-like workpiece from the workpiece attaching portion of the adhesive layer for bonding the wafer; and removing the adhesive layer; The step of adhering and fixing the wafer-shaped workpiece to the semiconductor element via the workpiece attaching portion of the adhesive layer for wafer bonding described above. A semiconductor device according to the method of fixing a wafer-like workpiece according to claim 12, wherein the wafer is attached via a workpiece attaching portion of the adhesive layer for wafer bonding The workpiece is bonded and fixed to the semiconductor component. A method of manufacturing a semiconductor device, the method of fabricating a semiconductor device according to any one of claims 1 to 11, wherein the method of manufacturing comprises: a step of crimping a workpiece on a workpiece attaching portion of the adhesive layer; and a step of simultaneously cutting the adhesive layer of the workpiece and the wafer into a wafer, stopping the cutting of the adhesive layer a step of crystallizing the wafer-like workpiece from the adhesive layer in the adhesive layer for bonding the wafer; and bonding the wafer-shaped workpiece through the adhesive A step of being fixed to a semiconductor component. A semiconductor device characterized by the method of manufacturing a semiconductor device according to claim 14, wherein the wafer-like workpiece is adhered via an adhesive in the adhesive layer for bonding the wafer. It is fixed to the semiconductor component.