TWI391324B - Process for purifying silicon source material by high gravity rotating packed beds - Google Patents
Process for purifying silicon source material by high gravity rotating packed beds Download PDFInfo
- Publication number
- TWI391324B TWI391324B TW99113769A TW99113769A TWI391324B TW I391324 B TWI391324 B TW I391324B TW 99113769 A TW99113769 A TW 99113769A TW 99113769 A TW99113769 A TW 99113769A TW I391324 B TWI391324 B TW I391324B
- Authority
- TW
- Taiwan
- Prior art keywords
- trichloromethane
- rotating packed
- packed bed
- oxygen
- supergravity rotating
- Prior art date
Links
Landscapes
- Silicon Compounds (AREA)
Description
本發明係有關於一種純化矽原料之製造方法,特別是一種以超重力旋轉填充床純化三氯矽烷或三氯矽烷與四氯化矽之混合物之製造方法。The present invention relates to a process for producing a purified ruthenium raw material, and more particularly to a process for purifying a mixture of trichloromethane or trichloromethane and ruthenium tetrachloride by a supergravity rotating packed bed.
電子級多晶矽(Electronic grade polysilicon,EGS)可從除去不純物如硼及磷之三氯矽烷或三氯矽烷與四氯化矽之混合物而獲得。大多數不純物可用分餾法立即除去。硼及磷等微量不純物通常以BCl3 ,PCl3 ,B2 H6 或PH3 之形式存在,但以分餾減少這些污染至可接受之低水準需幾道連續分餾步驟。主要原因是不純物氣體之氣泡不易自液態之三氯矽烷及四氯化矽抽走,且不純物氣體可能溶於液體中。其他原因是BCl3 之沸點(12.5℃)及PCl3 之沸點(74.2℃)不夠高也不夠低,於溫度高於32℃提取三氯矽烷時可能與三氯矽烷一起跑出來。Electronic grade polysilicon (EGS) can be obtained by removing impurities such as boron and phosphorus trichloromethane or a mixture of trichloromethane and hafnium tetrachloride. Most of the impurities can be removed immediately by fractional distillation. Trace impurities such as boron and phosphorus are typically present in the form of BCl 3 , PCl 3 , B 2 H 6 or PH 3 , but fractional distillation to reduce these contaminations to an acceptable low level requires several successive fractionation steps. The main reason is that the bubbles of the impurity gas are not easily removed from the liquid trichloromethane and the antimony tetrachloride, and the impurity gas may be dissolved in the liquid. The other reason is that the boiling point of BCl 3 (12.5 ° C) and the boiling point of PCl 3 (74.2 ° C) are not high enough or low enough to run out with trichloromethane when the temperature is higher than 32 ° C.
授予Albrecht等人之美國專利第5,616,245號提出一種超重力分離器以分離固體。其他製程亦建議以超重力分離器除去水中之氧氣或其他氣體。授予Ramshaw等人之美國專利第4,283,255號提出一種旋轉機台於兩種液體具高效率質傳作用之製程及設備,但並無一種先前技術利用旋轉機台除去矽原料之不純物。授予Darnell等人之美國專利第4,374,110及4,409,195號提出一種以少量之氧氣與氣態之三氯矽烷在170℃或60℃至300℃之高溫純化矽原料製程。U.S. Patent No. 5,616,245 to Albrecht et al. teaches a supergravity separator to separate solids. Other processes also recommend removing the oxygen or other gases in the water with a supergravity separator. U.S. Patent No. 4,283,255 to the entire disclosure of the entire disclosure of the entire disclosure of the entire disclosure of the entire disclosure of the entire disclosure of the disclosure of the disclosure of the disclosure of the present disclosure. U.S. Patent Nos. 4,374,110 and 4,409,195, the disclosure of each of which is incorporated herein by reference to the entire entire entire entire entire entire entire entire entire entire entire entire the
故有一種需求,能得到更高純度而無需花費時間及投資之多重分餾及高溫反應之純化製程。Therefore, there is a need for a purification process that can achieve higher purity without requiring time and investment for multiple fractionation and high temperature reactions.
本發明即針對此一需求,提出一種能解決以上缺點之純化製程。The present invention addresses this need and proposes a purification process that can solve the above disadvantages.
本發明之目的在提供一種改進純化矽原料之製造方法。It is an object of the present invention to provide a process for improving the purification of ruthenium raw materials.
本發明之次一目的在提供一種改進純化三氯矽烷之製造方法。A second object of the present invention is to provide a process for improving the purification of trichloromethane.
本發明之另一目的在提供一種改進純化四氯化矽之製造方法。Another object of the present invention is to provide a process for improving the purification of antimony tetrachloride.
本發明之又一目的在提供一種改進純化三氯矽烷與四氯化矽混合物之製造方法。A further object of the present invention is to provide a process for improving the purification of a mixture of trichloromethane and ruthenium tetrachloride.
本發明之再一目的在提供一種改進在較低溫除去氣態或液態不純物包含硼、磷之製造方法。Still another object of the present invention is to provide a process for improving the removal of gaseous or liquid impurities comprising boron and phosphorus at a lower temperature.
為達成上述目的及其他目的,本發明之第一觀點教導一種以二個超重力旋轉填充床純化包括三氯矽烷之矽原料之製造方法,將不純物包含硼、磷等之一或多種不純物,以氯化物、氫化物或包含硼、磷等之氯及氫之中間複合物之形式從矽原料除去,包含下列步驟:(1)將液態之矽原料通入有海綿狀金屬填充物之第一超重力旋轉填充床,矽原料包括三氯矽烷及四氯化矽,第一超重力旋轉填充床保持在低於矽原料之沸點溫度(如三氯矽烷之沸點為32℃,即保持在20-30℃)下,無任何氣體通入第一超重力旋轉填充床,沸點低於矽原料之不純物氫化物(如PH3 ,B2 H6 )蒸汽及其它氯矽烷或矽烷即從液態矽原料分離,以幫浦抽出供再利用或丟棄,輸出之矽原料再通入第二超重力旋轉填充床之矽原料入口;(2)將液態之矽原料通入有海綿狀金屬填充物之第二超重力旋轉填充床,此第二超重力旋轉填充床保持在低於矽原料之沸點溫度下,氧氣亦從上週邊通入第二超重力旋轉填充床,第二超重力旋轉填充床之三氯矽烷入口及氧氣入口之流速可以控制,使氧氣量與三氯矽烷與氧氣摩爾比為0.005至0.5,以形成不純物之氫氧化矽複合物,不純物氫化物蒸汽及其它氯矽烷或矽烷即再次從液態矽原料分離,以幫浦抽出供再利用或丟棄;(3)收集含有具較矽原料沸點高之不純物之氫氧化矽複合物之液態矽原料;(4)利用分餾步驟以 自矽原料除去包含不純物之氫氧化矽複合物。In order to achieve the above and other objects, a first aspect of the present invention teaches a method for purifying a raw material comprising ruthenium chloride, which comprises one or more impurities such as boron, phosphorus, etc., by using two supergravity rotating packed beds. The chloride, hydride or intermediate complex of chlorine and hydrogen containing boron, phosphorus, etc. is removed from the ruthenium raw material, and comprises the following steps: (1) passing the liquid ruthenium raw material into the first super sponge-like metal filler Gravity rotating packed bed, the raw material including trichloromethane and antimony tetrachloride, the first supergravity rotating packed bed is kept below the boiling temperature of the antimony raw material (for example, the boiling point of trichloromethane is 32 ° C, that is, maintained at 20-30 At °C), no gas is introduced into the first supergravity rotating packed bed, and the impurities such as pH 3 , B 2 H 6 vapor and other chlorodecane or decane having a boiling point lower than that of the ruthenium raw material are separated from the liquid ruthenium raw material. The pump is taken out for reuse or discarded, and the output raw material is then introduced into the raw material inlet of the second supergravity rotating packed bed; (2) the liquid raw material is introduced into the second super gravity with the sponge metal filling Rotating packed bed The second supergravity rotating packed bed is maintained at a temperature lower than the boiling point of the helium raw material, and oxygen is also introduced from the upper periphery into the second supergravity rotating packed bed, the second supergravity rotating packed bed of the trichloromethane inlet and the oxygen inlet. The flow rate can be controlled so that the molar ratio of oxygen to trichloromethane to oxygen is 0.005 to 0.5 to form an impurity-free cerium hydroxide complex, and the impurity hydride vapor and other chlorodecane or decane are again separated from the liquid cerium raw material. The pump is pumped out for reuse or disposal; (3) the liquid helium material containing the barium hydroxide complex having a higher boiling point than the raw material is collected; (4) the barium hydroxide step is used to remove the barium hydroxide containing the impurity from the barium material. Complex.
本發明之以上及其他目的及優點參考以下之參照圖示及最佳實施例之說明而更易完全瞭解。The above and other objects and advantages of the present invention will be more fully understood from the description and appended claims appended claims.
請參考第1圖,第1圖係顯示依據本發明較佳實施例之超重力旋轉填充床之剖面圖。第2圖係顯示依據本發明較佳實施例之超重力旋轉填充床之俯視圖。第一超重力旋轉填充床100有腔室112,矽原料入口101用以輸入液態矽原料如三氯矽烷、四氯化矽或三氯矽烷與四氯化矽之混合物。矽原料入口101之流速由一控制器(未圖示)控制。氣體出口102連於幫浦(未圖示)用以抽出氣態不純物。氧氣入口103關閉。當轉盤113為在軸封109、110內之轉軸111以約1500rpm之轉速驅動時,輸入之液態矽原料自分配器108進入轉盤113而被超重力向外甩,於向外途中,液體被轉盤113中之海綿狀金屬填充物107阻擋而形成小滴或薄膜,因此氣態不純物易與液體分離而經由氣體出口102被抽出。液態矽原料中無氣泡亦無氣體溶於其中,已純化之液態矽原料105經由矽原料出口106流出。Please refer to FIG. 1. FIG. 1 is a cross-sectional view showing a supergravity rotating packed bed according to a preferred embodiment of the present invention. Figure 2 is a plan view showing a supergravity rotating packed bed in accordance with a preferred embodiment of the present invention. The first supergravity rotating packed bed 100 has a chamber 112 for feeding a liquid helium material such as trichloromethane, hafnium tetrachloride or a mixture of trichloromethane and hafnium tetrachloride. The flow rate of the feedstock inlet 101 is controlled by a controller (not shown). The gas outlet 102 is connected to a pump (not shown) for extracting gaseous impurities. The oxygen inlet 103 is closed. When the turntable 113 is driven at a rotational speed of about 1500 rpm in the shaft seals 109, 110, the input liquid helium material enters the turntable 113 from the distributor 108 and is outwardly smashed by supergravity. On the way, the liquid is turned by the turntable 113. The spongy metal filler 107 is blocked to form droplets or films, so that the gaseous impurities are easily separated from the liquid and extracted through the gas outlet 102. The liquid helium raw material has no bubbles or gas dissolved therein, and the purified liquid helium raw material 105 flows out through the helium raw material outlet 106.
第二超重力旋轉填充床200有腔室212,矽原料入口201用以輸入來自矽原料出口106之液態矽原料,氧氣入口203用以輸入氧氣204,安裝於腔室212之上緣,氧氣入口203之流速由一控制器(未圖示)控制。氣體出口202連於幫浦(未圖示)用以抽出氣態不純物。當轉盤213為在軸封209、210內之轉軸211以約1500rpm之轉速驅動時,輸入之液態矽原料自分配器208進入轉盤213而被超重力向外甩,於向外途中,液體被轉盤213中之海綿狀金屬填充物207阻擋而形成小滴或薄膜,因此氣態不純物再次與液體分離而經由氣體出口202被抽出,液態矽原料中無氣泡亦無氣體溶於其中。氧氣在海綿狀金屬填充物207中在較低之溫度下因質傳而與三氯矽烷內之Si-H鍵反應而形成SiOH粒子(species)進而與存在於三氯矽烷內之不純物複合,形成不純物之氫氧化矽複合物。已純化之液態矽原 料205經由矽原料出口206流出。The second supergravity rotating packed bed 200 has a chamber 212 for inputting liquid helium raw material from the crucible raw material outlet 106, and an oxygen inlet 203 for inputting oxygen 204, mounted on the upper edge of the chamber 212, and an oxygen inlet. The flow rate of 203 is controlled by a controller (not shown). The gas outlet 202 is connected to a pump (not shown) for extracting gaseous impurities. When the turntable 213 is driven at a rotational speed of about 1500 rpm in the shaft seals 209, 210, the input liquid helium material enters the turntable 213 from the distributor 208 and is outwardly smashed by supergravity. On the way, the liquid is turned by the turntable 213. The spongy metal filler 207 is blocked to form droplets or films, so that the gaseous impurities are separated from the liquid again and are withdrawn through the gas outlet 202. The liquid helium material is free of bubbles and no gas therein. Oxygen reacts with the Si-H bond in the trichloromethane at a lower temperature in the spongy metal filler 207 to form SiOH particles and combines with the impurities present in the trichloromethane to form Impurity yttrium hydroxide complex. Purified liquid scorpion Feed 205 flows out through the crucible feed outlet 206.
純化矽原料之製程如下:首先,矽原料例如三氯矽烷冷卻至低於矽原料之沸點之溫度,如三氯矽烷為32℃,然後通入第一超重力旋轉填充床100之矽原料入口101,控制流速例如每年生產1,250噸三氯矽烷為195 g/sec,轉盤113之轉速約1500 rpm,當液態三氯矽烷通過海綿狀金屬填充物107,液體即成為小滴或薄膜而氣態不純物如PH3 ,B2 H6 或SiH4 即從液態矽原料分離而從氣體出口102被抽出。於此製程,未使用氧氣以避免氧氣與PH3 ,B2 H6 或SiH4 等反應;其次,液態矽原料由矽原料出口106流出再輸入第二超重力旋轉填充床200,氧氣亦通入氧氣入口203,控制三氯矽烷及氧氣之流速使與三氯矽烷與氧氣摩爾比為0.005至0.5,例如每年生產1,250噸三氯矽烷為195 g/sec,0.01 mole之氧氣為0.375 g/sec。如此,氧氣在海綿狀金屬填充物107中在較低之溫度下因質傳而與三氯矽烷內之Si-H鍵反應而形成SiOH粒子(species)進而與存在於三氯矽烷內之不純物複合,形成不純物之氫氧化矽複合物,此複合物較三氯矽烷不易揮發。然後,在後續之分餾步驟自不易揮發之不純物如硼及磷氫氧化矽複合物分離出純化之三氯矽烷。The process for purifying the ruthenium raw material is as follows: First, the ruthenium raw material such as trichloromethane is cooled to a temperature lower than the boiling point of the ruthenium raw material, such as trichloromethane at 32 ° C, and then passed to the first raw material inlet 101 of the first supergravity rotary packed bed 100. The flow rate is controlled, for example, to produce 1,250 tons of trichloromethane per year at 195 g/sec, and the rotation speed of the turntable 113 is about 1500 rpm. When the liquid trichloromethane passes through the sponge-like metal filler 107, the liquid becomes a droplet or a film and the gaseous impurity such as PH 3 , B 2 H 6 or SiH 4 is separated from the liquid helium raw material and is withdrawn from the gas outlet 102. In this process, no oxygen is used to avoid the reaction of oxygen with PH 3 , B 2 H 6 or SiH 4 , etc. Secondly, the liquid helium raw material is discharged from the raw material outlet 106 and then input into the second supergravity rotating packed bed 200, and oxygen is also introduced. The oxygen inlet 203 controls the flow rate of trichloromethane and oxygen to a molar ratio of trichloromethane to oxygen of from 0.005 to 0.5, for example, 1,250 tons of trichloromethane per year is 195 g/sec, and 0.01 mole of oxygen is 0.375 g/sec. Thus, oxygen reacts with the Si-H bond in the trichloromethane at a lower temperature in the spongy metal filler 107 to form SiOH particles and is combined with the impurities present in the trichloromethane. A cerium hydroxide complex which forms an impurity which is less volatile than trichloromethane. The purified trichloromethane is then separated from the less volatile impurities such as boron and phosphorus lanthanum hydroxide complexes in a subsequent fractionation step.
藉由以上較佳之具體實施例之詳述,係希望能更加清楚描述本創作之特徵與精神,而並非以上述所揭露的較佳具體實例來對本發明之範疇加以限制。相反的,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範疇內。The features and spirit of the present invention are more clearly described in the detailed description of the preferred embodiments of the present invention, and are not intended to limit the scope of the invention. On the contrary, the intention is to cover various modifications and equivalent arrangements within the scope of the invention as claimed.
100‧‧‧第一超重力旋轉填充床100‧‧‧First supergravity rotating packed bed
101‧‧‧矽原料入口101‧‧‧矽Material entry
102‧‧‧氣體出口102‧‧‧ gas export
103‧‧‧氧氣入口103‧‧‧Oxygen inlet
105‧‧‧已純化之液態矽原料105‧‧‧purified liquid helium raw materials
106‧‧‧矽原料出口106‧‧‧矽 Raw material exports
107‧‧‧海綿狀金屬填充物107‧‧‧Sponge metal filler
108‧‧‧分配器108‧‧‧Distributor
109、110‧‧‧軸封109, 110‧‧‧ shaft seal
111‧‧‧轉軸111‧‧‧ shaft
112‧‧‧腔室112‧‧‧ chamber
113‧‧‧轉盤113‧‧‧ Turntable
200‧‧‧第二超重力旋轉填充床200‧‧‧Second supergravity rotating packed bed
201‧‧‧矽原料入口201‧‧‧矽 Raw material entrance
202‧‧‧氣體出口202‧‧‧ gas export
203‧‧‧氧氣入口203‧‧‧Oxygen inlet
204‧‧‧氧氣204‧‧‧Oxygen
205‧‧‧已純化之液態矽原料205‧‧‧purified liquid helium raw materials
206‧‧‧矽原料出口206‧‧‧矽 Raw material exports
207‧‧‧海綿狀金屬填充物207‧‧‧Sponge metal filler
208‧‧‧分配器208‧‧‧Distributor
209、210‧‧‧軸封209, 210‧‧‧ shaft seal
211‧‧‧轉軸211‧‧‧ shaft
212‧‧‧腔室212‧‧‧ chamber
213‧‧‧轉盤213‧‧‧ Turntable
第1圖係顯示依據本發明較佳實施例之超重力旋轉填充床之剖面圖。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a supergravity rotating packed bed in accordance with a preferred embodiment of the present invention.
第2圖係顯示依據本發明較佳實施例之超重力旋轉填充床之俯視圖。Figure 2 is a plan view showing a supergravity rotating packed bed in accordance with a preferred embodiment of the present invention.
100‧‧‧第一超重力旋轉填充床100‧‧‧First supergravity rotating packed bed
101‧‧‧矽原料入口101‧‧‧矽Material entry
102‧‧‧氣體出口102‧‧‧ gas export
103‧‧‧氧氣入口103‧‧‧Oxygen inlet
105‧‧‧已純化之液態矽原料105‧‧‧purified liquid helium raw materials
106‧‧‧矽原料出口106‧‧‧矽 Raw material exports
107‧‧‧海綿狀金屬填充物107‧‧‧Sponge metal filler
108‧‧‧分配器108‧‧‧Distributor
110‧‧‧軸封110‧‧‧ shaft seal
111‧‧‧轉軸111‧‧‧ shaft
112‧‧‧腔室112‧‧‧ chamber
113‧‧‧轉盤113‧‧‧ Turntable
200‧‧‧第二超重力旋轉填充床200‧‧‧Second supergravity rotating packed bed
201‧‧‧矽原料入口201‧‧‧矽 Raw material entrance
202‧‧‧氣體出口202‧‧‧ gas export
203‧‧‧氧氣入口203‧‧‧Oxygen inlet
204‧‧‧氧氣204‧‧‧Oxygen
205‧‧‧已純化之液態矽原料205‧‧‧purified liquid helium raw materials
206‧‧‧矽原料出口206‧‧‧矽 Raw material exports
207‧‧‧海綿狀金屬填充物207‧‧‧Sponge metal filler
208‧‧‧分配器208‧‧‧Distributor
210‧‧‧軸封210‧‧‧ shaft seal
211‧‧‧轉軸211‧‧‧ shaft
212‧‧‧腔室212‧‧‧ chamber
213‧‧‧轉盤213‧‧‧ Turntable
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW99113769A TWI391324B (en) | 2010-04-30 | 2010-04-30 | Process for purifying silicon source material by high gravity rotating packed beds |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW99113769A TWI391324B (en) | 2010-04-30 | 2010-04-30 | Process for purifying silicon source material by high gravity rotating packed beds |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201136832A TW201136832A (en) | 2011-11-01 |
TWI391324B true TWI391324B (en) | 2013-04-01 |
Family
ID=46759336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW99113769A TWI391324B (en) | 2010-04-30 | 2010-04-30 | Process for purifying silicon source material by high gravity rotating packed beds |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI391324B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110982076A (en) * | 2019-12-26 | 2020-04-10 | 江苏美思德化学股份有限公司 | Method for preparing low-volatile polysiloxane by using supergravity device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200423998A (en) * | 2003-05-06 | 2004-11-16 | Ind Tech Res Inst | Method for removal of unreacted alcohol from reaction mixture of ester product with rotating packed beds |
-
2010
- 2010-04-30 TW TW99113769A patent/TWI391324B/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200423998A (en) * | 2003-05-06 | 2004-11-16 | Ind Tech Res Inst | Method for removal of unreacted alcohol from reaction mixture of ester product with rotating packed beds |
Also Published As
Publication number | Publication date |
---|---|
TW201136832A (en) | 2011-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
RU2393991C2 (en) | Method and apparatus for purifying trichlorosilane and silicon tetrachloride | |
CN100593513C (en) | Method for producing silicon | |
TWI436946B (en) | Method for producing polycrystal silicon and polycrystal silicon production equipment | |
US20130156675A1 (en) | Process for production of silane and hydrohalosilanes | |
CN102372271A (en) | Recovery method of waste chlorsilane in polysilicon produced through modified Simens Method | |
CN109231217B (en) | System and method for rapidly cooling chlorosilane raffinate to remove metal chloride | |
US8568597B2 (en) | Process for purifying silicon source material by high gravity rotating packed beds | |
TWI391324B (en) | Process for purifying silicon source material by high gravity rotating packed beds | |
SE1150277A1 (en) | Process and system for producing silicon and silicon carbide | |
JP4128983B2 (en) | Method for producing silicon chloride and method for producing polycrystalline silicon using the same | |
CN106317095B (en) | A kind of concentrated hydrochloric acid hydrolysis technique and device | |
JP4463502B2 (en) | Method for recovering chlorosilanes | |
KR101651433B1 (en) | Silicon oxide removal apparatus, and inert gas collection facility for silicon monocrystal production apparatus | |
US20100221171A1 (en) | Method for producing polycrystalline silicon | |
TWI568673B (en) | Purification of trichlorosilane | |
EP2385017B1 (en) | Process for purifying silicon source material by high gravity roating packed beds | |
JP5210350B2 (en) | Method for purifying silicon with a rotating packed bed | |
US20120177559A1 (en) | Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds | |
KR20190109949A (en) | Synthetic and filtration purification systen for disilane | |
JP2004256338A (en) | Method of manufacturing chlorosilane | |
CN105480982B (en) | A kind of dichlorosilane impurity-removing method | |
JP4309648B2 (en) | High purity aluminum chloride manufacturing method and high purity aluminum chloride manufacturing apparatus | |
CN111533164B (en) | Vanadium removal method for titanium tetrachloride in boiling chlorination system | |
CN102241402B (en) | Preparation method for purifying silicon raw material by using hyper-gravity rotating packed bed | |
JP2006176357A (en) | Method for producing hexachlorodisilane |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |