CN102642839B - Processing process of industrial grade silicon tetrachloride - Google Patents
Processing process of industrial grade silicon tetrachloride Download PDFInfo
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- CN102642839B CN102642839B CN 201210141828 CN201210141828A CN102642839B CN 102642839 B CN102642839 B CN 102642839B CN 201210141828 CN201210141828 CN 201210141828 CN 201210141828 A CN201210141828 A CN 201210141828A CN 102642839 B CN102642839 B CN 102642839B
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- silicon tetrachloride
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- removing tower
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- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 239000005049 silicon tetrachloride Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000012535 impurity Substances 0.000 claims abstract description 22
- 239000007787 solid Substances 0.000 claims abstract description 13
- 238000010992 reflux Methods 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 238000000605 extraction Methods 0.000 claims description 18
- 239000007792 gaseous phase Substances 0.000 claims description 15
- 241000282326 Felis catus Species 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 2
- 239000000047 product Substances 0.000 abstract description 14
- 238000009835 boiling Methods 0.000 abstract description 10
- 239000002994 raw material Substances 0.000 abstract description 8
- 238000000746 purification Methods 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 238000003889 chemical engineering Methods 0.000 abstract 1
- 238000005265 energy consumption Methods 0.000 abstract 1
- 239000012467 final product Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000006227 byproduct Substances 0.000 description 7
- 239000000470 constituent Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000011345 viscous material Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 3
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GPATXKGIPSPFHV-UHFFFAOYSA-N Cl[SiH](Cl)Cl.Cl[Si](Cl)(Cl)Cl Chemical compound Cl[SiH](Cl)Cl.Cl[Si](Cl)(Cl)Cl GPATXKGIPSPFHV-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 229910000519 Ferrosilicon Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The invention belongs to the field of chemical engineering purification and provides a process processing industrial grade silicon tetrachloride into high-purity silicon tetrachloride. The process comprises the following steps: coarse silicon tetrachloride enters a heavy-removing tower, a produced material at the top of the heavy-removing tower serves as a primary product to enter a buffer tank, and produced materials in a tower kettle of the heavy-removing tower are impurities with a high boiling point and solid impurities; the primary product in the buffer tank enters a light-removing tower, a gas phase material at the top of the light-removing tower serves as a heat source to enter a reboiler of the heavy-removing tower and then is cooled through a condenser, and a produced material of the light-removing tower enters a secondary heavy-removing tower by differential pressure; a produced material of the secondary heavy-removing tower flows back to serve as feed of the heavy-removing tower, and a produced material at the top of the secondary heavy-removing tower is a final product. The process can prevent the solid impurities and sticky materials with the high boiling point in a raw material from blocking a feeding pipe of a follow-up rectification tower, is low in requirements for raw material quality and suitable for processing industrial grade silicon tetrachloride of various different sources, and reduces energy consumption by thermal coupling rectification of the heavy-removing tower and the light-removing tower.
Description
Technical field
The invention belongs to chemical industry purification field, be specifically related to industrial grade silicon tetrachloride rectifying is obtained the treatment process of high purity silicon tetrachloride.
Background technology
Be colourless transparent liquid under the silicon tetrachloride normal temperature, density 1.50g/cm
3, 57.6 ℃ of boiling points are met the water facile hydrolysis and are become silicic acid and hydrogenchloride, and skin is corrosive, and high purity silicon tetrachloride can be used for making preform and high purity quartz and is used for silicon epitaxy etc., is a kind of high value-added product that has.The silicon tetrachloride of technical grade source is very many, as synthesizing trichlorosilane (HSiCl
3) time by product, as in production of polysilicon, producing a large amount of silicon tetrachloride byproducts, each ton polysilicon just produces the silicon tetrachloride about 10 tons, and therefore, the recoverying and utilizing method of seeking this type of byproduct can effectively reduce production cost and the environmental contamination reduction of polysilicon.Simultaneously, the silicon tetrachloride of technical grade also can obtained through distillation with the chlorine effect more than 200 ℃ by ferrosilicon.
Patent documentation CN 102219222 A disclose a kind of continuous rectification method for high-purity silicon tetrachloride for optical fiber, and the method is taken off first light constituent with thick silicon tetrachloride, take off restructuring again and divide, and get high purity silicon tetrachloride finally by rectification under vacuum, owing to containing HSiCl in the thick silicon tetrachloride
3, HSi
2Cl
5, metal chloride (AlCl
3CuCl
2And FeCl
3Deng), nonmetal muriate (BCl
3And PCl
3Deng), organism (tetrachloroethane, polymkeric substance etc.), complex compound and solid particle polluter, taking off the light constituent step, the feed-pipe that the viscosity organism that remains in the thick silicon tetrachloride and solid impurity very easily stop up de-heavy oil column.So this technique is only applicable to process, and relative restructuring divides, the poor thick silicon tetrachloride of solid impurity.
Patent documentation CN 101920964 B disclose a kind of method for purifying silicon tetrachloride by double-effect distillation, and the method is introduced into spray column with thick silicon tetrachloride, enter lightness-removing column behind the vapor condensation again, enter at last weight-removing column, thereby obtain the product silicon tetrachloride.Although the employing spray column can be removed the solid impurity in the thick silicon tetrachloride, because silicon tetrachloride and water electrode easily react, causes the loss of silicon tetrachloride, thereby has limited the effect of spray column.In addition, thick silicon tetrachloride fails to remove the viscosity organism, so that the method still has the existing blocking pipe problem of preceding method.
Summary of the invention
The objective of the invention is to solve because restructuring in the thick silicon tetrachloride divides, solid impurity contains the high problem that easily causes line clogging, a kind for the treatment of process that is applicable to the industrial grade silicon tetrachloride in various sources is provided.
The present invention realizes that the technical scheme that above-mentioned purpose adopts is as follows:
The treatment process of industrial grade silicon tetrachloride, this processing step is as follows: first thick silicon tetrachloride is entered weight-removing column, weight-removing column overhead extraction thing enters surge tank as primary products, and weight-removing column tower reactor production is high-boiling-point impurity and solid impurity; Primary products in the surge tank pump into lightness-removing column again, and the gaseous phase materials of lightness-removing column cat head enters the reboiler of weight-removing column as thermal source, and through the condenser cooling, lightness-removing column tower reactor production enters the secondary weight-removing column by pressure reduction again; Secondary weight-removing column tower reactor production refluxes as the charging of weight-removing column, and secondary weight-removing column overhead extraction thing is the finished product.
Further, the tower reactor temperature of described weight-removing column is 75～120 ℃, and tower top temperature is 65～100 ℃, and reflux ratio is (6～24): 1.
Further, the tower reactor temperature of described lightness-removing column is 90～135 ℃, and tower top temperature is 60～100 ℃, and reflux ratio is (35～180): 1.
Further, the tower reactor temperature of described secondary weight-removing column is 75～110 ℃, and tower top temperature is 65～105 ℃, and reflux ratio is (6～18): 1.
Further, described lightness-removing column tower top pressure is 0.2～0.45MPa, and described secondary weight-removing column tower top pressure is 0.08～0.3MPa.
Three grades of continuous rectifying of process using of the present invention, thick silicon tetrachloride is first by weight-removing column → lightness-removing column → secondary weight-removing column, weight-removing column and lightness-removing column adopt thermal coupling rectifying simultaneously, namely adopt lightness-removing column top gaseous phase material as the thermal source of weight-removing column reboiler, realize refining purification and save energy purpose to industrial grade silicon tetrachloride.This technique is got rid of the solid impurity in the raw material, high boiling point viscous material with weight-removing column first, prevent that this type of impurity from stopping up the feed pipe of follow-up rectifying tower, therefore require low to the raw materials quality of thick silicon tetrachloride, applied widely, can not only process the silicon tetrachloride by product that produces when trichlorosilane synthesizes, the silicon tetrachloride by product that produces in the time of also production of polysilicon can being processed.Foreign matter content is down to ppb(part per billion in the prepared silicon tetrachloride the finished product) level.
Description of drawings
The processing technological flow figure of Fig. 1 industrial grade silicon tetrachloride of the present invention.
Among the figure: 1-weight-removing column, 2-lightness-removing column, 3-secondary weight-removing column, (4,5,6)-reboiler, (7,8,9)-condenser, 10-surge tank, 11-return tank, 12-reflux pump.
Embodiment
The present invention will be further described below in conjunction with embodiment and accompanying drawing.
Industrial grade silicon tetrachloride of the present invention is the by-product silicon tetrachloride that produces in the production of polysilicon or the trichlorosilane silicon tetrachloride as by-product when synthetic, and this class raw material all is referred to as thick silicon tetrachloride.The theoretical stage of weight-removing column, lightness-removing column and secondary weight-removing column is 45.
Embodiment 1
The thick silicon tetrachloride of 85 (quality) % is entered weight-removing column with the flow of 2000kg/h, the tower reactor temperature is controlled at 75 ℃, tower top temperature is controlled at 65 ℃, reflux ratio is 6:1, the gaseous phase materials of cat head is transformed into liquid phase through condenser, the liquid phase material partial reflux weight-removing column that obtains, the part extraction enters surge tank as primary products and with the flow of 1700kg/h, the material part of tower reactor is returned weight-removing column through reboiler, another part is extraction then, and the tower reactor production is high boiling point viscous substance and the solid impurities such as polymkeric substance and complex compound.Primary products in the surge tank enter lightness-removing column with pump delivery again, the tower reactor temperature is controlled at 90 ℃, tower top temperature is controlled at 60 ℃, tower top pressure is 0.2MPa, reflux ratio 35:1, the material part of tower reactor is returned lightness-removing column through reboiler, another part extraction, production enters the secondary weight-removing column with the flow of 1500kg/h, and the gaseous phase materials of cat head is mainly lower boiling light constituent impurity, and this gaseous phase materials elder generation is through the reboiler 4 of weight-removing column, for reboiler provides heat, enter return tank 11 again after the condenser 8 of lightness-removing column is condensed into liquid phase, make partial reflux be back to lightness-removing column by reflux pump, another part production is then as the raw material of producing polysilicon.Secondary weight-removing column tower reactor temperature is controlled at 75 ℃, tower top temperature is controlled at 65 ℃, tower top pressure 0.08MPa, with the charging of thick silicon tetrachloride as weight-removing column, all the other restructuring minute materials return the secondary weight-removing column through reboiler to the material that reflux ratio 6:1, tower reactor production are mainly restructuring minute foreign material with the 100kg/h flow, the top gaseous phase material is liquid phase through condenser condenses, partial reflux secondary weight-removing column, the part extraction, production is limited to highly purified silicon tetrachloride.
Embodiment 2
The thick silicon tetrachloride of 95 (quality) % is entered weight-removing column with the flow of 2000kg/h, the tower reactor temperature is controlled at 100 ℃, tower top temperature is controlled at 88 ℃, reflux ratio 20:1, the gaseous phase materials of cat head is transformed into liquid phase through condenser, the liquid phase material partial reflux weight-removing column that obtains, the part extraction enters surge tank as primary products and with the flow of 1700kg/h, the material part of tower reactor is returned weight-removing column through reboiler, another part is extraction then, and the tower reactor production is high boiling viscous substance and the solid impurities such as polymkeric substance and complex compound.Primary products in the surge tank enter lightness-removing column with pump delivery again, the tower reactor temperature is controlled at 114 ℃, tower top temperature is controlled at 85 ℃, tower top pressure 0.37MPa, reflux ratio 150:1, the material part of tower reactor is returned lightness-removing column through reboiler, another part extraction, production enters the secondary weight-removing column with the flow of 1500kg/h, and the gaseous phase materials of cat head is mainly lower boiling light constituent impurity, and this gaseous phase materials elder generation is through the reboiler 4 of weight-removing column, for reboiler provides heat, enter return tank 11 again after the condenser 8 of lightness-removing column is condensed into liquid phase, make partial reflux be back to lightness-removing column by reflux pump, another part production is then as the raw material of producing polysilicon.Secondary weight-removing column tower reactor temperature is controlled at 94 ℃, tower top temperature is controlled at 88 ℃, tower top pressure 0.25MPa, with the charging of thick silicon tetrachloride as weight-removing column, rest materials is returned the secondary weight-removing column through reboiler with the 100kg/h flow for reflux ratio 15:1, one one of the material that is mainly restructuring minute impurity of tower reactor extraction, the top gaseous phase material is liquid phase through condenser condenses, partial reflux secondary weight-removing column, the part extraction, production is highly purified silicon tetrachloride.
Embodiment 3
The thick silicon tetrachloride of 90 (quality) % is entered weight-removing column with the flow of 2000kg/h, the tower reactor temperature is controlled at 120 ℃, tower top temperature is controlled at 100 ℃, reflux ratio 24:1, the gaseous phase materials of cat head is transformed into liquid phase through condenser, the liquid phase material partial reflux weight-removing column that obtains, the part extraction enters surge tank as primary products and with the flow of 1700kg/h, the material part of tower reactor is returned weight-removing column through reboiler, another part is extraction then, and the tower reactor production is high boiling viscous substance and the solid impurities such as polymkeric substance and complex compound.Primary products in the surge tank enter lightness-removing column with pump delivery again, the tower reactor temperature is controlled at 135 ℃, tower top temperature is controlled at 100 ℃, tower top pressure 0.45MPa, reflux ratio 180:1, the material part of tower reactor is returned lightness-removing column through reboiler, another part extraction, production enters the secondary weight-removing column with the flow of 1500kg/h, and the gaseous phase materials of cat head is mainly lower boiling light constituent impurity, and this gaseous phase materials elder generation is through the reboiler 4 of weight-removing column, for reboiler provides heat, enter return tank 11 again after the condenser 8 of lightness-removing column is condensed into liquid phase, make partial reflux be back to lightness-removing column by reflux pump, another part production is then as the raw material of producing polysilicon.Secondary weight-removing column tower reactor temperature is controlled at 110 ℃, tower top temperature is controlled at 105 ℃, tower top pressure 0.3MPa, with the charging of thick silicon tetrachloride as weight-removing column, rest materials is returned the secondary weight-removing column through reboiler with the 100kg/h flow for reflux ratio 18:1, one one of the material that is mainly restructuring minute impurity of tower reactor extraction, the top gaseous phase material is liquid phase through condenser condenses, partial reflux secondary weight-removing column, the part extraction, production is highly purified silicon tetrachloride.
Adopt ICP-MAS to embodiment 1,2,3 prepared high purity silicon tetrachloride impurity element (mass content) analytical resultss
Claims (2)
1. the treatment process of industrial grade silicon tetrachloride, it is characterized in that, processing step is as follows: first thick silicon tetrachloride is entered weight-removing column (1), weight-removing column overhead extraction thing enters surge tank (10) as primary products, weight-removing column tower reactor production is high-boiling-point impurity and solid impurity, the tower reactor temperature of described weight-removing column is 75～120 ℃, and tower top temperature is 65～100 ℃, and reflux ratio is (6～24): 1; Primary products in the surge tank (10) enter lightness-removing column (2) again, the gaseous phase materials of lightness-removing column cat head enters the reboiler (4) of weight-removing column (1) as thermal source, pass through again condenser (8) cooling, lightness-removing column tower reactor production enters secondary weight-removing column (3) by pressure reduction, the tower reactor temperature of described lightness-removing column is 90～135 ℃, tower top temperature is 60～100 ℃, and reflux ratio is (35～180): 1; Secondary weight-removing column tower reactor production refluxes as the charging of weight-removing column (1), and secondary weight-removing column overhead extraction thing is the finished product, and the tower reactor temperature of described secondary weight-removing column is 75～110 ℃, and tower top temperature is 65～105 ℃, and reflux ratio is (6～18): 1.
2. the treatment process of described industrial grade silicon tetrachloride according to claim 1, it is characterized in that: described lightness-removing column tower top pressure is 0.2～0.45MPa, described secondary weight-removing column tower top pressure is 0.08～0.3MPa.
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Families Citing this family (9)
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| CN104817091A (en) * | 2014-01-30 | 2015-08-05 | 内蒙古盾安光伏科技有限公司 | Treatment process of silicon tetrachloride |
| CN104058408B (en) * | 2014-06-26 | 2016-07-06 | 中国恩菲工程技术有限公司 | The method of purification Silicon chloride. |
| CN104058407B (en) * | 2014-06-26 | 2016-08-17 | 中国恩菲工程技术有限公司 | Purify the system of silicon tetrachloride |
| CN105314638B (en) * | 2015-11-26 | 2018-01-05 | 新疆大全新能源有限公司 | Silicon tetrachloride recycling and the method and apparatus except high-boiling components in trichlorosilane synthesis material |
| CN105330135A (en) * | 2015-12-04 | 2016-02-17 | 太仓市建兴石英玻璃厂 | Preparing method for high-purity silica glass |
| CN106927468A (en) * | 2017-04-06 | 2017-07-07 | 洛阳中硅高科技有限公司 | A kind of device for preparing electron level trichlorosilane |
| CN110357150A (en) * | 2019-08-08 | 2019-10-22 | 中国恩菲工程技术有限公司 | Titanium tetrachloride rectificating method |
| CN114835130A (en) * | 2022-06-30 | 2022-08-02 | 北京化工大学 | Production method of high-purity quartz |
| CN115196638B (en) * | 2022-07-23 | 2023-05-16 | 中船(邯郸)派瑞特种气体股份有限公司 | Silicon tetrachloride impurity removal method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101920964A (en) * | 2010-09-11 | 2010-12-22 | 天津大学 | Method for purifying silicon tetrachloride by double-effect distillation |
| CN102219222A (en) * | 2011-04-22 | 2011-10-19 | 武汉新硅科技有限公司 | Continuous rectification method for high-purity silicon tetrachloride for optical fiber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5950016A (en) * | 1982-09-10 | 1984-03-22 | Central Glass Co Ltd | Method for purifying silicon tetrafluoride |
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- 2012-05-09 CN CN 201210141828 patent/CN102642839B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101920964A (en) * | 2010-09-11 | 2010-12-22 | 天津大学 | Method for purifying silicon tetrachloride by double-effect distillation |
| CN102219222A (en) * | 2011-04-22 | 2011-10-19 | 武汉新硅科技有限公司 | Continuous rectification method for high-purity silicon tetrachloride for optical fiber |
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| JP昭59-50016A 1984.03.22 |
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Address after: 830011, room 716, Mustang building, No. 158, Kunming Road, the Xinjiang Uygur Autonomous Region, Urumqi Applicant after: Xinte Energy Co.,Ltd. Address before: 830011, room 716, Mustang building, No. 158, Kunming Road, the Xinjiang Uygur Autonomous Region, Urumqi Applicant before: TBEA Xinjiang Silicon Industry Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: TBEA XINJIANG SILICON INDUSTRY CO., LTD. TO: XINTE ENERGY CO., LTD. |
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Denomination of invention: Processing process of industrial grade silicon tetrachloride Effective date of registration: 20190425 Granted publication date: 20130306 Pledgee: Beijing Bank Co., Ltd. Urumqi Branch Pledgor: Xinte Energy Co.,Ltd. Registration number: 2019650000005 |
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Date of cancellation: 20220518 Granted publication date: 20130306 Pledgee: Beijing Bank Co.,Ltd. Urumqi Branch Pledgor: XINTE ENERGY Co.,Ltd. Registration number: 2019650000005 |