TWI389763B - Fabrication method of the pzt-based dome-shaped-diaphragm sonic sensor for monitoring health condition of working machines - Google Patents

Description

Piezoelectric dome film audio sensor manufacturing method for monitoring machine tool

The present invention relates to a method of fabricating an audio sensor, and more particularly to a method of fabricating a piezoelectric dome film audio sensor for monitoring a power tool.

According to the general detection of the machine tool damage phenomenon in advance, it can be used in the time domain spectrum obtained by the machine voiceprint detection, and the characteristic value of the significant change area can be used as the basis for checking the state of the machine. Monitor the vibration changes caused by the machine under normal operation and abnormal conditions, and find out the vibration characteristics of the tool failure by monitoring the vibration change. Therefore, the monitoring vibration characteristics are widely applied to faults, excessive wear or structural damage. In the prediction, however, the vibration spectrum used is the vibration of the entire machine. Therefore, when the detection point moves or changes, the measured vibration signal will also change; for example, The positioning mechanism of the machine tool includes a plurality of linear transmission components, wherein each component has its own vibration characteristics, and when the components are combined, a coupling vibration mode is generated, and the multiple vibration spectrum map is required to determine the source of the abnormal state. And, in addition, there are linear slide rails commonly used in machine tools, if the pre-stress levels are different or uneven and the inner steel of the bead groove In the case of defects, it will affect the characteristics of the voiceprint in the movement of the positioning platform. When the steel ball is missing, the contact stiffness of the wire rail will be reduced, which will lead to the decrease of the vibrating sound frequency of the machine. It can be seen that the characteristics of the voiceprint can be analyzed. The way to detect the change of the state of the linear slide in the implement; however, although the sound sensor can be detected by the audio sensor to detect the damage of the machine tool, the pre-stress of the existing audio sensor for the implement Most of the sound patterns in the detection and vibration of the machine are limited to a fixed bandwidth, but the bandwidth of the existing audio sensor is not wide enough. Therefore, when monitoring the damage of the machine tool, the tool must be determined first. After the frequency range of the damage is generated, the audio sensor with the same bandwidth can be selected for monitoring, which is not only inconvenient to use, but also needs to purchase multiple audio sensors with different bandwidths, and relatively increase the monitoring station. The time and cost required are to be improved.

In order to improve the lack and limitation of the bandwidth of the audio sensor which is useful for monitoring the damage of the machine tool, the object of the present invention is to provide a piezoelectric type for monitoring the machine tool with the focus effect, mass production and cost saving. Dome film audio sensor manufacturing method.

Based on the above object, the technical means used in the present invention is to provide a piezoelectric dome optical audio sensor manufacturing method for monitoring a power tool, and the operation process thereof comprises: embossing mold production: first designing a set of light The cover is etched through the yellow light exposure development technique to etch a plurality of component region ranges on a wafer, pour a polydimethyloxane into a petri dish, and etch the wafer frame that has been etched. Placed on a petri dish filled with polydimethyloxane, and put rigid spheres of different diameters into the front surface of each component area of the crucible wafer frame, so that dimethyl methoxyoxane located on the front side of each component region Forming a circular curved surface with different curvatures and plunging angles, placing the culture dish on a heater to heat and standing, forming the polydimethyl siloxane as an imprinting mold, and finally forming the enamel wafer The frame is separated from the imprinted mold, that is, the production of the imprinted mold core is completed; the dome film is formed: the wax and the dome shape are formed on the crucible wafer frame, wherein each element region is Sprinkle the wax on the back and put it on The step is that the rigid sphere of the stamping die is placed in the front surface of each component region, so that the wax on the front side of each component region forms a circular curved surface conforming to the shape of the stamping die, thereby forming a circular curved surface. A support layer is formed on the front surface of each component region, and the wax removal operation is performed after the vapor deposition of the parylene is completed; the heat-resistant silicone rubber is prepared: a flat layer of parylene is prepared, and a heat-resistant silicone rubber is uniformly applied thereto. On the planar parylene, after the heat-resistant silicone is formed, the flat-type parylene is removed from the planar parylene and floated over the back surface of the support layer covering each element region, and the imprinted mold is placed on the twin crystal. Below the circular frame, the support layer covering each of the component regions covered with the heat-resistant silicone is aligned and placed on the imprinted mold core, and a rigid sphere conforming to the arcuate surface of each component region is placed in the front surface of each component region, and a glass sheet is placed on the top surface of each rigid sphere, a supporting block is placed on the glass sheet and heated to cure the heat-resistant silicone on the back side of the support layer; and the piezoelectric film Disposing a metal lower electrode on the support layer on the front side of each component region, after the metal lower electrode is formed on the support layer, by repeatedly spraying a lead zirconate titanate solution and baking, the metal is A piezoelectric film of lead zirconate titanate is formed on the lower electrode, and a metal upper electrode is deposited by sputtering on the piezoelectric film, thereby completing the fabrication of the piezoelectric dome film audio sensor of the present invention.

Further, in the step of manufacturing the stamper, a tantalum nitride layer is deposited on the upper and lower surfaces of the germanium wafer, and 32 element regions are etched on the germanium wafer frame.

Further, in the step of fabricating the dome film, the support layer is formed on the front surface of each element region by vapor deposition, and a relatively high temperature resistant parylene is selected as the material of the support layer.

Preferably, in the step of fabricating the dome film, the wax wafer frame is heated to a high temperature by a heater during wax removal, so that the wax material located on the back surface of each component region is slowly melted into a liquid state, and then borrowed. After repeatedly washing the acetone and deionized water, and repeating the steps of heating and rinsing, the detailed wax material can be removed, and the crucible wafer frame is heated on the heater, rinsed with acetone and then used again. The ionized water is rinsed, and finally the water on the crucible wafer frame is baked by high temperature baking, so that each component region forms a complete arc-shaped support layer due to the water vapor relationship.

Preferably, in the step of preparing the heat-resistant silicone rubber, after the heat-resistant silicone rubber on the back surface of each support layer is formed, a protective layer of parylene is formed on each of the heat-resistant silicone rubber by vapor deposition, and then the entire heat-resistant silicone rubber is coated. In order to avoid the influence of outside air molecules, each heat-resistant silicone rubber causes a smooth serpentine phenomenon on the surface due to expansion and contraction.

Preferably, in the step of fabricating the piezoelectric film, a film having a thickness of about 0.2 μm of the metal lower electrode is deposited on each of the support layers by sputtering.

Preferably, in the step of fabricating the piezoelectric film, a cooling operation is required for baking the lead zirconate titanate piezoelectric film, and the cooling operation is performed to prevent the previous lead zirconate titanate solution from being dried again. When the solution is applied, it tends to show crystallization after the solution is dry-baked, and the phenomenon of crystallization also means that the film after the solution is dried is quite thick, and the film condition is entered into the high-temperature sintering furnace and baked at a high temperature. The texture of the back film is quite brittle, and sometimes the film after high temperature baking cannot form a film, and therefore, a cooling action is required in the process of repeated baking.

Preferably, when baking the lead zirconate titanate piezoelectric film, the baking is divided into five stages, wherein the first stage is heated to 150 ° C, and the second stage is baked at 150 ° C for 10 minutes, the third stage. The heating is heated to 300 ° C, and the fourth stage is baked at a temperature of 300 ° C for 15 minutes. The fifth stage is subjected to a natural cooling operation after the high temperature baking is completed, that is, the baking operation of the lead zirconate titanate piezoelectric film is completed.

Preferably, in the step of fabricating the piezoelectric film, when the metal upper electrode is not formed, an insulating layer of parylene is deposited on the piezoelectric film by evaporation to prevent the two metal electrodes. There will be mutual conduction.

Preferably, in the step of fabricating the piezoelectric film, aluminum is used as the material of the metal lower electrode and the metal upper electrode.

By the above technical means, the piezoelectric dome optical audio sensor manufacturing method for monitoring the machine tool of the present invention can at least obtain the following advantages and effects:

1. Focusing characteristic: The manufacturing method of the piezoelectric dome film audio sensor of the present invention is to adjust the arc curvature of each component region by arranging the size of the 矽 wafer frame and the diameter of each rigid sphere. It can directly affect the focusing distance of each component region, so that the sound waves generated by the vibration of the piezoelectric film can reach a concentrated characteristic, and the piezoelectric dome optical audio sensor can effectively detect the change of the operating state of the machine tool. The piezoelectric film can be used to generate a large amount of electric charge, thereby providing a large frequency signal, so that the audio sensor can be applied to various bandwidth detections.

2, mass production: the piezoelectric dome film audio sensor manufacturing method of the present invention, in advance of the entire planned process, a piece of germanium wafer as the main frame of the component, the germanium wafer system has 32 components The area, from the formation of the initial circular curved surface to the sputtering of the last metal upper electrode, performs the process operation in batch form.

3. Cost saving: The manufacturing method of the piezoelectric dome film audio sensor of the present invention can be repeated by using the germanium wafer as a main frame for forming the component, and the part of the frame can be repeated every time the process is re-executed. The use, plus each process is in batch form, and the lead zirconate titanate piezoelectric film is formed by a sol-gel method (Sol-Gel), which can be fabricated at a lower sintering temperature. Producing high-purity ceramic materials, unlike traditional ceramics, is produced by solid-state sintering (mixing, smoldering, pulverizing, forming, sintering), thus greatly reducing the cost of manufacturing and simplifying the process steps. .

In order to understand the technical features and practical effects of the present invention in detail, and in accordance with the contents of the specification, the following further describes the preferred embodiment of the present invention (shown in FIGS. 1 to 5). The operation flow of the method for manufacturing a piezoelectric dome film audio sensor for monitoring a power tool is as follows: A. Imprinting mold production: as shown in FIGS. 1 and 2, a set of light is first designed. The cover layer is etched through a yellow light exposure technique to etch a plurality of component regions 11 on a wafer 10. Preferably, the germanium wafer 10 is deposited with a tantalum nitride layer 12 on the upper and lower surfaces, respectively. And 32 element regions 11 are etched on the frame of the germanium wafer 10, as shown in FIG. 3, a prepared polydimethyl siloxane (PDMS) is poured into a diameter of about 15 cm. In the culture dish 21, the frame of the ruthenium wafer 10 which has been etched is placed on the petri dish 21 which is filled with the polydimethyl siloxane 20, and the rigid spheres 22 of different diameters are placed in the frame of the ruthenium wafer 10. In the front side of each element region 11, dimethyl hydrazine located on the front side of each element region 11 is thereby made The alkane 20 forms a circular arc surface having different curvatures and plunging angles, and the culture dish 21 is placed on a heater (not shown) and heated and allowed to stand, so that the polydimethyl oxime as the embossing mold core 30 is made. The alkane is molded, and finally the frame of the crucible wafer 10 is separated from the imprinted mold core 30, that is, the fabrication of the imprinted mold core 30 is completed; B. The dome film is fabricated: as shown in FIG. 4, on the crucible wafer 10 The frame is subjected to an action of sprinkling the wax 40 and dome shape, in which the wax 40 is sprinkled on the back surface of each element region 11 to avoid unnecessary wax adhering to the front surface of each element region 11 during subsequent wax removal. So that the subsequent step of removing the wax can be removed from the frame of the crucible wafer 10 more cleanly, and the above-described step for the rigid sphere 22 of the imprinting mold core 30 is placed in the front surface of each component region 11, thereby providing The wax material 40 on the front surface of each of the element regions 11 forms an arcuate curved surface conforming to the shape of the imprinted mold core 30, and a support layer 50 as a dome film is formed on the front surface of each of the element regions 11 forming the arcuate curved surface, preferably The support layer 50 is formed in each element region 11 by vapor deposition. Among them, higher temperature resistant parylene is used as the material of the support layer 50, and after the evaporation of the parylene is completed, the wax removal operation is performed, and the frame of the crucible wafer 10 is first passed through a heating. The device (not shown) is heated to a high temperature, so that the wax 40 located on the back surface of each element region 11 is slowly melted into a liquid state, and then repeatedly rinsed with acetone and deionized water, and the steps of heating and rinsing are repeated, that is, The detailed wax 40 can be removed, and the crucible wafer 10 frame is heated on the heater, rinsed with acetone and then rinsed with deionized water, and finally the crucible wafer 10 frame is baked at a high temperature. The moisture is baked and dried, so that each component region 11 forms a complete arc-shaped support layer 50 due to the water vapor relationship; C, heat-resistant silicone production: please refer to FIG. 5 to make a layered planar pair. Toluene (Parylene), and a heat-resistant silicone 60 is evenly applied to the planar parylene. After the heat-resistant silicone 60 is formed, the heat-resistant silicone 60 is removed from the planar parylene and floated over the respective component regions. 11 on the back of the support layer 50, The imprinting mold core 30 is placed under the frame of the crucible wafer 10, so that the component layers 11 covering the heat-resistant silicone 60 are aligned and placed on the imprinting mold core 30, and the respective component regions 11 are A rigid spherical body 22 with a circular arc surface matching the support layer 50 is placed on the front surface of each element region 11, and a glass sheet 23 is placed on the top surface of each rigid spherical body 22, and a load block 24 is placed on the glass sheet body 23 and Heating is performed to cure the heat-resistant silicone 60 on the back surface of the support layer 50. Preferably, after the heat-resistant silicone 60 on the back surface of each support layer 50 is formed, as shown in FIG. 6, the heat-resistant silicone 60 is vapor-deposited. A protective layer 61 of parylene is formed thereon, and the entire heat-resistant silicone 60 is coated to avoid the influence of external air molecules, so that the heat-resistant silicone 60 is not smooth on the surface due to expansion and contraction. Snake phenomenon, because the surface of the serpentine surface is not smooth, the metal bond is easily broken and cannot be turned on. Therefore, improving the serpentine phenomenon of the surface contributes to the smoothness of the surface of each support layer 50. Further, the sputtered metal electrode has better characteristics and enhances the focusing characteristics of the device; and D, piezoelectric film fabrication: please refer to FIG. 6 for the support layer 50 on the front side of each component region 11. A metal lower electrode 70 is deposited thereon, and a thin film of a metal lower electrode 70 having a thickness of about 0.2 micrometers (μm) is deposited on each of the support layers 50 by sputtering, and the metal lower electrode 70 is formed thereon. After supporting the layer 50, a piezoelectric thin film of lead zirconate titanate 80 is formed on the metal lower electrode 70 by repeatedly spraying a lead zirconate titanate (PZT) solution and baking, wherein zirconium titanate is present. The lead piezoelectric film 80 needs to be cooled during baking. The cooling action is to prevent the lead zirconate titanate solution from being dried and then sprinkled with the solution, which tends to crystallize after the solution is dry-baked. The phenomenon of crystallization also means that the film after the solution is dried is quite thick, and the film condition is entered into the high-temperature sintering furnace. After baking at a high temperature, the texture of the film is quite brittle and sometimes baked at a high temperature. After the film is still unable to form a film Therefore, a cooling action is required in the process of the reverse baking. Preferably, the lead zirconate titanate piezoelectric film 80 is formed by a sol-gel method; preferably, in practice. The process is divided into five stages for baking, in which the first stage is heated to 150 ° C, the second stage is baked at 150 ° C for 10 minutes, the third stage is heated to 300 ° C, and the fourth stage is held at 300 ° C. Baking for 15 minutes, the fifth stage is subjected to a natural cooling action after completion of the high-temperature baking, that is, the baking operation of the lead zirconate titanate piezoelectric film 80 is completed; after the baking step of the piezoelectric film 80 is completed, An insulating layer 81 of parylene is deposited on the piezoelectric film 80 by evaporation, wherein the insulating layer 81 has a thickness of about 1 to 1.5 micrometers (μm), and the insulating layer 81 is used to prevent formation. When the upper and lower electrodes 70, 90, the two metal electrodes 70, 90 will be electrically connected to each other. In addition, after the actual process test, it is found that the thickness of the insulating layer 81 is not less than 1 micrometer (μm), otherwise it will make the upper and lower sides. The electrodes are electrically connected to each other, but if the thickness of the insulating layer 81 is too thick, the electrode Without the characteristics of the component, finally, a metal upper electrode 90 is deposited on the insulating layer 81 by sputtering, that is, the fabrication of the piezoelectric dome thin film audio sensor of the present invention is completed, preferably, Aluminum is used as the material of the metal lower electrode 70 and the metal upper electrode 90 in the operation step.

According to the above technical means, the piezoelectric dome optical film sensor manufacturing method of the present invention can control not only the frame size of the silicon wafer 10 but also the diameter of each rigid sphere. The curvature of the circular arc directly affects the focusing distance of each element region 11, so that the sound waves generated by the vibration of the piezoelectric film 80 can reach a concentrated characteristic, effectively by the piezoelectric dome film audio sensor, Detecting changes in the operating state of the machine tool, and generating a large amount of charge by the piezoelectric film 80, thereby providing a larger frequency signal, so that the audio sensor can be applied to various bandwidth detections; The present invention is a piezoelectric dome film audio sensor manufacturing method, which can be used as a main frame of components in a whole planned process, and the germanium wafer 10 has 32 component regions. From the formation of the initial arcuate surface to the sputtering of the last metal upper electrode 90, the process is performed in batch form, so that the frame of the crucible wafer 10 can be reused, plus the process of each pass. The batch form is adopted, and the lead zirconate titanate piezoelectric film 80 is formed by a sol-gel method (Sol-Gel), which can greatly reduce the cost required for fabrication and can simplify the steps of the process, and constitute a kind of focusing. An effect, mass-produced, and cost-effective piezoelectric dome film audio sensor manufacturing method and method of fabricating the same.

The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any one of ordinary skill in the art can use the present invention without departing from the scope of the present invention. Equivalent embodiments of the invention may be made without departing from the technical scope of the present invention.

10. . . Silicon wafer

11. . . Component area

12. . . Tantalum nitride layer

20. . . Polydimethyloxane

twenty one. . . Petri dish

twenty two. . . Rigid sphere

twenty three. . . Glass sheet

twenty four. . . Block

30. . . Imprinted mold

40. . . Wax

50. . . Support layer

60. . . Heat resistant silicone

61. . . The protective layer

70. . . Metal lower electrode

90. . . Metal upper electrode

80. . . Piezoelectric film

81. . . Insulation

1 is an operational flow of a method for manufacturing a piezoelectric dome film audio sensor for monitoring a power tool of the present invention.

2 is a schematic flow chart showing the operation of forming a germanium wafer frame according to the present invention.

FIG. 3 is a schematic view showing the operation flow of forming an imprinted mold core according to the present invention.

Fig. 4 is a schematic view showing the operation of the piezoelectric film of the present invention.

Fig. 5 is a schematic view showing the operation flow of the heat-resistant silicone rubber of the present invention.

Fig. 6 is a schematic view showing the operation of the piezoelectric film of the present invention.

Claims (10)

A method for manufacturing a piezoelectric dome film audio sensor for monitoring a machine tool, comprising the following steps: embossing mold production: first designing a set of reticle and developing the technology through yellow light exposure, A plurality of component region ranges are etched on a wafer, a polydimethyloxane is poured into a petri dish, and the etched wafer frame is placed in an inverted polydimethyl siloxane. On the petri dish of the alkane, rigid spheres of different diameters are placed in the front surface of each component region of the crucible wafer frame, so that the dimethyl methoxyoxane located on the front side of each component region forms a circular curved surface with different curvature and plunging angle. The culture dish is placed on a heater to be heated and allowed to stand, and the polydimethyl siloxane is used as an embossing mold to form, and finally the enamel wafer frame is separated from the embossing mold. That is, the production of the imprinted mold core is completed; the dome film is formed by spraying the wax and the dome shape on the crucible wafer frame, wherein the wax is sprinkled on the back surface of each component region, and the above steps are used. Inserting a rigid sphere into the stamping die In the front surface of the component region, the wax material on the front surface of each component region forms a circular curved surface conforming to the shape of the imprinting mold, and a support layer is formed on the front surface of each component region forming the circular curved surface, and the poly layer is completed. The action of removing wax after vapor deposition of p-xylene; preparation of heat-resistant silicone: preparing a flat layer of parylene, and uniformly applying a heat-resistant silicone to the planar parylene, and forming the heat-resistant silicone Thereafter, the planar parylene is removed and floated on the back surface of the support layer covering each component region, and the imprinted mold core is placed under the crucible wafer frame, so that the component regions are covered with the heat-resistant silicone support. The layer is aligned and placed on the imprinted mold core, and a rigid sphere conforming to the arcuate surface of each component region is placed in the front surface of each component region, and a glass sheet is placed on the top surface of each rigid sphere. A load block is placed on the glass sheet and heated to cure the heat-resistant silicone on the back side of the support layer; and the piezoelectric film is formed: the support layer on the front side of each component region is sunk a metal lower electrode, after the metal lower electrode is formed on the support layer, a piezoelectric film of lead zirconate titanate is formed on the metal lower electrode by repeatedly spraying a lead zirconate titanate solution and baking The film is deposited on the piezoelectric film by sputtering to form a metal upper electrode, thereby completing the fabrication of the piezoelectric dome film audio sensor of the present invention. The method for manufacturing a piezoelectric dome film audio sensor for monitoring a machine tool according to claim 1, wherein in the step of embossing the mold, the upper and lower surfaces of the silicon wafer are used. A tantalum nitride layer is deposited separately, and 32 element regions are etched on the germanium wafer frame. The method for manufacturing a piezoelectric dome thin film audio sensor for monitoring a machine tool according to claim 1 or 2, wherein in the step of fabricating the dome film, the support layer is subjected to evaporation. It is formed on the front side of each element region, and a relatively high temperature resistant parylene is selected as the material of the support layer. The method for manufacturing a piezoelectric dome film audio sensor for monitoring a machine tool according to claim 3, wherein in the step of fabricating the dome film, the wafer frame is removed during wax removal. After heating to a high temperature by a heater, the wax on the back surface of each element region is slowly melted into a liquid state, and then repeatedly rinsed with acetone and deionized water, and the steps of heating and rinsing are repeated, and then the details can be After the wax is removed, the crucible wafer frame is heated on the heater, rinsed with acetone and then rinsed with deionized water, and finally the moisture on the crucible wafer frame is baked by high temperature baking, so that each A component region forms a complete arc-shaped support layer due to the water vapor relationship. The method for manufacturing a piezoelectric dome film audio sensor for monitoring a machine tool according to claim 4, wherein in the step of manufacturing the heat-resistant silicone, after the heat-resistant silicone on the back of each support layer is formed, The vapor deposition method forms a protective layer of parylene on each heat-resistant silicone rubber, and then coats the entire heat-resistant silicone rubber to avoid the influence of external air molecules, so that the heat-resistant silicone rubber is not formed on the surface due to expansion and contraction. Smooth snake pattern. The method for manufacturing a piezoelectric dome film audio sensor for monitoring a machine tool according to claim 5, wherein in the step of fabricating the piezoelectric film, depositing on each support layer by sputtering A film of a metal lower electrode having a thickness of about 0.2 μm is produced. The method for manufacturing a piezoelectric dome film audio sensor for monitoring a machine tool according to claim 6, wherein in the step of fabricating the piezoelectric film, when the lead zirconate titanate piezoelectric film is baked The action of cooling is required. In order to prevent the previous lead zirconate titanate solution from being dried and sprinkled again, it is easy to crystallize after the solution is dry-baked, and the phenomenon of crystallization also represents a solution. The dried film is quite thick, and the film condition enters the high-temperature sintering furnace. After baking at a high temperature, the texture of the film is quite brittle, and sometimes the film after high-temperature baking cannot form a film, so In the process of repeated baking, a cooling action is required. The method for manufacturing a piezoelectric dome film audio sensor for monitoring a machine tool according to claim 7, wherein when the lead zirconate titanate piezoelectric film is baked, it is baked in five stages. The first stage is heated to 150 ° C, the second stage is baked at 150 ° C for 10 minutes, the third stage is heated to 300 ° C, the fourth stage is heated at 300 ° C for 15 minutes, and the fifth stage is heated. After the baking is completed, the natural cooling action is performed, that is, the baking operation of the lead zirconate titanate piezoelectric film is completed. The method for manufacturing a piezoelectric dome film audio sensor for monitoring a machine tool according to the invention of claim 8, wherein in the step of fabricating the piezoelectric film, when the metal upper electrode is not formed, An insulating layer of parylene is deposited on the piezoelectric film by evaporation to prevent mutual conduction between the two metal electrodes. The method for manufacturing a piezoelectric dome film audio sensor for monitoring a machine tool according to claim 9, wherein in the step of fabricating the piezoelectric film, aluminum is used as the metal lower electrode and the metal The material of the electrode.