TWI387087B - Three-dimensional conducting structure and method of fabricating the same - Google Patents

Description

Three-dimensional conduction structure and manufacturing method thereof

The present invention relates to a conductive structure and a method of fabricating the same, and more particularly to a three-dimensional conductive structure and a method of fabricating the same.

Broadly speaking, System in Package (SiP) covers the early Multi-chip Module (MCM) technology, Multi-chip Package (MCP) technology, and wafer stacking (Stack). Die), PoP (Package on Package), PiP (Package in Package), and techniques for embedding the active/passive component in a substrate (Embedded Substrate). In terms of structural appearance, MCM belongs to the two-dimensional 2D structure, while MCP, wafer stacking, PoP, PiP, etc. belong to the three-dimensional 3D structure; since the 3D structure can meet the requirements of miniaturization and high efficiency, it has been in recent years. Come to be favored by the industry.

Further, in terms of interconnect technology, the conventional 2D or 3D structure is mostly based on wire bonding, a small part is Flip Chip, or a combination of both. Taking a stack die as an example, the upper wafer must still be interconnected with other wafers by wire bonding technology. When the number of stacked wafers is increased, the longer the bonding wire length of the upper wafer is, and thus the effect is affected. The performance of the entire package system; in addition, in order to preserve the wire space, a proper insertion of the spacer between the wafer and the wafer will also result in a seal. The volume of the package is increased.

In recent years, the new interconnect technology developed by the industry, the Through Silicon Via (TSV), was born. Please refer to FIGS. 1A-1F for a schematic flow chart of a method for manufacturing a channel conductor structure. First, as shown in FIG. 1A, a wafer 10 is provided, and the front surface 10a of the wafer has a thickened solder pad 12. Next, as shown in FIG. 1B, the first laser drilling is performed, and the hole is drilled from the wafer back surface 10b by laser, and the surface of the solder pad 12 is stopped to form the opening 14. Since it is necessary to drill holes from the back surface 10b of the wafer, it is easy to cause a problem of inaccurate alignment. On the other hand, since the laser power is unstable, and the selection ratio for the germanium (the material of the wafer) and the metal (the material of the solder pad) is not high, it is easy for the laser to penetrate the solder pad in this step. While this problem can be solved by thickening the solder pads 12, thickening the solder pads 12 undoubtedly increases the cost of money and time in the manufacturing process.

Referring to FIG. 1C, the insulating material 16 is filled into the opening 14. Next, a second laser drilling is performed, as shown in Fig. 1D, drilling holes in the insulating material 16 and also stopping on the surface of the solder pad 12 to form the channel 17. Thereafter, as shown in FIG. 1E, the conductive material 18 is filled into the channel 17. Finally, as shown in FIG. 1F, the wafer 10 is bonded to another wafer 20, and the solder pads 12 of the wafer 10 are electrically connected to the solder pads 22 of the other wafer 20 through the conductive material 18.

However, when the second laser is drilled to form the channel 17, it is very easy to ream the hole and cause a leakage current problem. When drilling with a laser to the solder pad 12, the metal material (i.e. solder pad 12) will reflect or refract the thunder The light-emitting, insulating material 16 adjacent to the solder pad 12 is also simultaneously burned by the laser, resulting in a larger aperture at the end of the channel 17 or even exposing the wafer 10. Refilling the conductive material 18 in the channel 17 will cause the conductive material 18 to contact the wafer 10, causing the conductive material 18, which would otherwise have to be insulated, to make an electrical connection with the wafer 10, a so-called leakage current problem.

The present invention relates to a three-dimensional conductive structure and a method of fabricating the same.

The invention proposes a three-dimensional conduction structure applied to a package. The three-dimensional conduction structure includes a substrate, a first redistribution conductor, a second redistribution conductor, and an insulating material. The substrate has an active surface and a passive surface opposite thereto, the substrate has a solder pad and a through hole, and the solder pad is located on the active surface. The first redistribution conductor includes a ridge portion and a receiving portion, the ridge portion is bulged outward from the active surface of the substrate, and is electrically connected to the solder pad; the receiving portion is located on the outer side of the active surface, and is connected to the ridge portion, wherein the ridge portion and the ridge portion are received The department system constitutes a accommodating space, and the accommodating space is connected to the through hole. The second redistribution conductor is located in the through hole and in the accommodating space, and the second redistribution system contacts the receiving portion and extends along the through hole from the receiving portion toward the passive surface. The insulating material is filled between the second redistribution conductor and the substrate and the second redistribution conductor and the ridge.

The invention provides a method for manufacturing a three-dimensional conduction structure, which is applied to a package, and the method comprises: (a) providing a substrate, the substrate having an active a surface and a passive surface opposite thereto, the substrate having a solder pad on the active surface; (b) drilling from the active surface of the substrate to the passive surface, thereby forming a through hole; (c) forming a first repeating conductor on the active surface, A heavy-distribution system is connected to the soldering pad and is bulged outward from the active surface to form an accommodating space communicating with the through-hole; (d) filling the insulating material in the through-hole and the accommodating space; (e) performing laser Drilling, forming a through hole in the insulating material along the through hole and the accommodating space, the end of the through hole exposing the first redistributed conductor; and (f) filling the conductive material in the through hole, thereby forming a contact first Re-strip the second repeat conductor of the conductor.

In order to make the above-mentioned contents of the present invention more comprehensible, a preferred embodiment will be described below, and in conjunction with the drawings, a detailed description is as follows:

The present invention mainly provides a three-dimensional conduction structure including a substrate, a first redistribution conductor, a second redistribution conductor, and an insulating material. The substrate has an active surface and a passive surface opposite thereto, the substrate has a solder pad and a through hole, and the solder pad is located on the active surface. The first redistribution conductor includes a ridge portion and a receiving portion. The ridge portion is bulged outward from the active surface of the substrate and electrically connected to the solder pad. The receiving portion is located on the outer side of the active surface and is connected to the ridge portion, wherein the ridge portion and the receiving portion are The accommodating space is formed, and the accommodating space is connected to the through hole. The second redistribution conductor is located in the through hole and in the accommodating space, and the second redistribution system contacts the receiving portion and extends along the through hole from the receiving portion toward the passive surface. Insulation material is filled in the second weight Between the cloth conductor and the substrate and the second redistribution conductor and the ridge.

The conductive structure of the present invention can vertically pass through the substrate and extend horizontally, and realize three-dimensional space wiring in a package structure in which a plurality of components need to communicate with each other, which can not only reduce the package volume but also shorten the wire path, and make the transmission speed faster. The noise is smaller and the performance is better. In the following, several sets of embodiments are given, and the manufacturing process and structural features of the three-dimensional conductive structure are described in detail with reference to the drawings, and the arrangement of the three-dimensional conductive structure in the package structure is depicted. However, those skilled in the art can understand that these The text is for illustrative purposes only and does not limit the scope of the claimed invention.

First embodiment

Please refer to FIGS. 2A-2J for a manufacturing flow diagram of a package having a three-dimensional conduction structure according to a first embodiment of the present invention. The manufacturing method of the package having the three-dimensional conduction structure of this embodiment includes the following steps. First, referring to FIG. 2A, a first substrate 110 is provided. The first substrate 110 has an active surface 112 and a passive surface 114 opposite thereto. The first substrate 110 has a solder pad 116 on the active surface 112. The first substrate 110 is preferably a CMOS Image Sensor (CIS) that receives image or light through the active surface 112.

Then, the active surface 112 of the first substrate 110 is drilled to the passive surface 114, thereby forming a through hole 118. The through hole 118 can be disposed at any position of the first substrate 110, for example, it can be directly worn. Over solder pads 116 (as shown in FIG. 2B) or substrates that are less dense through the lines (as in the second embodiment of the invention, as shown in FIG. 4B). The position of the solder pad and the metal line pattern can be clearly observed from the active surface. Whether the through hole is expected to pass through the solder pad 116 or any position on the substrate, the hole can be accurately drilled by the active surface. Formed in the preset position, in other words, the present embodiment is bored through the active surface 112 of the first substrate 110, which can effectively solve the problem of conventional misalignment.

Next, a first redistribution conductor is formed on the active surface 112 of the first substrate (such as 130 in FIG. 2G). Since the manufacturing method of the first redistributed conductor can be various, the present embodiment proposes one of the methods and cooperates with the second C. The ~2G diagram is described in detail below. First, as shown in FIG. 2C, the second substrate 120 is provided, and at least one pad 122 is formed on the second substrate 120. The second substrate 120 is preferably a transparent substrate, such as a glass substrate, such that light can penetrate the second substrate 120 into the underlying substrate. Typically, a metal layer is formed on the second substrate 120, and a portion of the metal layer is removed to form a patterned metal layer, such as pad 122, on the second substrate 120. Then, referring to FIG. 2D, the insulating layer 124 is covered on the pad 122 and the second substrate 120. The insulating layer 124 is preferably an ABF insulating film (ABF) or an anisotropic conductive film (AJ). Anisotropic Conductive Film, ACF). Next, referring to FIG. 2E, a portion of the insulating layer 124 is removed, thereby forming a recess 126 of the insulating layer 124, and the recess 126 exposes the pad 122. On the other hand, absolutely The edge layer 124 preferably has an opening 127 corresponding to the active surface 112 of the first substrate 110. To this end, the second substrate assembly 120a is completed, the surface of which covers the insulating layer 124, and the insulating layer 124 has a recess 126 exposing the pad 122. Then, referring to FIG. 2F, a conductive layer 128 is formed on the pad 122, the inner wall of the recess 126, and a portion of the insulating layer 124. The conductive layer 128 can be formed by sputtering, chemical vapor deposition (CVD), printing, or the like. According to the distribution position, the conductive layer 128 is further divided into a ridge portion 128a and a receiving portion 128b. The ridge portion 128a includes a conductive layer 128 on the insulating layer 124 and the inner wall of the recess 126. The receiving portion 128b includes a conductive layer on the pad 122. The layer 128, the receiving portion 128b is connected to the ridge portion 128a, wherein the ridge portion 128a and the receiving portion 128b constitute the accommodating space 136. The raised portion 128a and the receiving portion 128b are preferably integrally formed. In the present embodiment, the conductive layer 128 and the pads 122 preferably constitute the first redistribution conductor 130.

It should be noted that the pads 122 on the second substrate 120 can be omitted. Even if there is no pad 122 in the second substrate assembly 120a, the same shape of the conductive layer 128 can be formed along the recess 126. Therefore, in other In the preferred embodiment, the conductive layer 128 separately constitutes the first redistribution conductor 130.

It should be noted that in the process of forming the second substrate assembly 120a, the present embodiment uses two yellow etching steps to etch the pads and the opening of the insulating layer, respectively, and the yellow etching does not damage the glass surface. So by passing light through the second substrate 120 (eg When the glass substrate and the insulating layer are opened into the first substrate 110 (e.g. image sensing wafer), the image sensing wafer can receive a clear and unambiguous image to avoid noise or stain caused by scratching of the glass surface.

Next, referring to FIG. 2G, the second substrate assembly 120a is flipped over, correspondingly bonded to the active surface 112 side of the first substrate 110, wherein the conductive layer 128 on the insulating layer 124 is connected to the solder pad 116, and The conductive layer 128 on the pad 122 and the inner wall of the recess faces the through hole 118, whereby the first redistribution conductor 130 is formed on the active surface 112 of the first substrate 110. So far, the first redistribution conductor 130 has been formed on the active surface 112 of the first substrate 110, and the first redistribution conductor 130 is connected to the solder pad 116 and bulged outward by the active surface 112, thereby forming a connection with the through hole 118. Space 136 is placed as shown in Figure 2G.

Next, the insulating material 134 is filled in the through hole 118 and the accommodating space 136 as shown in FIG. 2H. In a preferred embodiment, the third substrate 140 is disposed on the passive surface 114 of the first substrate 110, and the insulating material 134 also covers the third substrate 140 and the passive surface 114 of the first substrate 110. The third substrate 140 also has an active surface and a passive surface opposite thereto. The active surface of the third substrate 140 includes a solder pad 142. The solder pad 142 is preferably away from the passive surface 114 of the first substrate 110.

Thereafter, the direction from the passive surface 114 toward the active surface 112 is along the through hole 118 and the accommodating space 136 in the insulating material 134. The hole is drilled to form a through hole 146, and the end of the through hole 146 exposes the conductive layer 128 of the first redistribution conductor 130, as shown in Fig. 2I. The drilling method is preferably laser drilling. Since the laser has a high selection ratio of the insulating material and the metal material, the laser is controlled so that the etching does not continue to etch after the insulating material 134 is etched. The layer 128 is relatively easy to achieve, so that the problem of conventionally penetrating the conductive layer can be avoided. In a preferred embodiment, the insulating material 134 may be removed in the same or different manner to form the opening 147 to expose the solder pad 142 of the third substrate 140.

Next, a conductive material is filled in the via 146 to form a second redistribution conductor 148 that contacts the first redistribution conductor 130, as shown in FIG. 2J.

The structural features of the three-dimensional conduction structure fabricated according to the above manufacturing method are disclosed as follows. Referring to FIG. 2G , the stereo conduction structure of the embodiment includes a first substrate 110 , a first redistribution conductor 130 , a second redistribution conductor 148 , and an insulating material 134 . The first substrate 110 has a solder pad 116 and a through hole 118 on the active surface 112. In the present embodiment, the through holes 118 are preferably passed through the solder pads 116.

The first redistribution conductor 130 includes a ridge portion 128a and a receiving portion 128b, and the ridge portion 128a and the receiving portion 128b are preferably integrally formed. The raised portion 128a (i.e., the conductive layer 128 on the inner wall of the recess 126) is bulged outward from the active surface 112 of the first substrate 110 and electrically connected to the solder pad 116. The raised portion 128a of the present embodiment is preferably It is disposed on the solder pad 116. The receiving portion 128b (ie, the conductive layer 128 on the surface of the pad 122) is located on the outer side of the active surface 112 and is connected to the ridge portion 128a. The ridge portion 128a and the receiving portion 128b constitute an accommodating space 136. The through hole is connected to 118. In this embodiment, the first redistribution conductor 130 preferably further includes a pad 122 disposed on the second substrate 120 and connected to the receiving portion 128b.

The second redistribution conductor 148 is located in the through hole 118 and in the accommodating space 136, and the second redistribution conductor 148 is in contact with the receiving portion 128b and extends along the through hole 118 from the receiving portion 128b toward the passive surface 114. The insulating material 134 is filled between the second redistribution conductor 148 and the first substrate 110 and the second redistribution conductor 148 and the ridge portion 128a.

Please note that the solder pads 116 of the first substrate 110 are connected to the first redistribution conductors 130 (including the pads 122 of the second substrate and the conductive layer 128), and the first redistribution conductors 130 are connected to the second redistribution conductors 148. The electrical signal of the first substrate 110 is transmitted through the first redistribution conductor 130 and the second redistribution conductor 148. It is worth mentioning that the three-dimensional conduction structure of the embodiment can avoid the problem of leakage current. In detail, when the laser is conventionally drilled into the conductive layer 128, the conductive layer 128 reflects or refracts the laser light, and the insulating material 134 adjacent to the conductive layer 128 is also burned by the laser, resulting in the aperture at the end of the through hole 146. Larger or even exposed surrounding material (for example, a substrate), when the conductive material is refilled in the through hole 146, the conductive material will be contacted. To the surrounding materials, the conductive material that must be insulated is electrically connected to the substrate, which is a so-called leakage current problem. However, the three-dimensional conductive structure of the present embodiment surrounds the end of the through hole 146 with the conductive layer 128, and even if the hole expansion occurs during the laser drilling, the filled conductive material (ie, the second redistribution conductor 148) is still with the conductive layer. The contact of the 128 does not transfer current to the substrate. Therefore, the three-dimensional conduction structure of the embodiment can solve the leakage current problem that is difficult to avoid by the conventional over-silicon via (TSV).

Finally, in a preferred embodiment, the conductive material is also filled into the opening 147, and a patterned conductive layer 152/154/156 is formed on the surface of the insulating material 134 to cover the insulating layer 150 on the first substrate 110 and the third substrate 140. The insulating layer 150 is etched and filled with a conductive material to form a solder pad 162/164/166, and finally solder balls 172/174/176 are implanted on the solder pads 162/164/166, thereby completing the package 100, as shown in FIG. 2J. .

The package 100 of the present embodiment can transmit electrical signals between the substrate and the substrate or between the substrate and the external components by using the three-dimensional conduction structure. For example, the first substrate 110 can transmit electrical signals through the path formed by the solder pad 116, the first redistribution conductor 130, the second redistribution conductor 148, the conductive layer 152, the solder pad 162, and the solder ball 172, and the external component; A substrate 110 can also transmit electrical signals to the third substrate 140 through a path formed by the solder pads 116, the first redistributing conductors 130, the second redistributable conductors 148, the conductive layer 156, the solder pads 166, and the solder balls 176, for example, The received image is transmitted to The third substrate performs image processing.

In this embodiment, it is disclosed that the second substrate 120 is preferably a glass substrate. The first substrate 110 is preferably a CMOS image sensor (CIS) that can receive images or light through the active surface 112 through the glass substrate. The three substrate 140 is preferably a digital signal processor (DSP) for transmitting the image received by the first substrate 110 (eg image sensing wafer) and then transmitting it. However, it is obvious to those skilled in the art that the application range of the three-dimensional conductive structure and the manufacturing method thereof of the present invention is not limited thereto, and can also be applied to Micro-Electro-Mechanical Systems (MEMS). Or other packaging structure or technology.

Furthermore, although the second substrate assembly forming step is disclosed in FIG. 2C to FIG. 2E, the forming step is not limited thereto. For example, please refer to FIGS. 3A-3E, which illustrate a schematic flow chart of another method of forming a second substrate assembly in accordance with a first preferred embodiment of the present invention. First, as shown in FIG. 3A, a second substrate 120 is provided, and a patterned metal layer is formed on the second substrate 120. The patterned metal layer includes a protective layer 222 and at least one pad 122, and the patterned metal layer has a better thickness. It is about 1 μm. Thereafter, referring to FIG. 3B, the insulating layer 124 is covered on the protective layer 222, the pad 122, and the second substrate 120. The thickness of the insulating layer 124 is preferably about 40 μm. Next, referring to FIG. 3C, a portion of the insulating layer 124 is removed, thereby exposing the protective layer 222. It is preferred to remove the insulation by laser The layer, since the laser also etches the second substrate 120, if there is no protective layer 222, the laser of this step is very easy to form a scratch on the surface of the second substrate 120, plus the laser for the insulating material and the metal material (the pad 122) The selection ratio is high, so the protective layer 222 can effectively prevent the second substrate 120 from being damaged by the laser. Then, referring to FIG. 3D, the exposed protective layer 222 is etched in a yellow light process to form an opening 127 of the insulating layer, corresponding to the photosensitive region 112 on the active surface of the first substrate 110, so that light can penetrate the second substrate 120. And the opening 127 enters the substrate below it. Finally, referring to FIG. 3E, another portion of the insulating layer 124 is removed, thereby forming the recess 126 of the insulating layer 124, and the recess 126 is exposed to the pad 122. This step preferably performs laser drilling. Technology to remove insulation. It is worth mentioning that the method of the present invention utilizes two laser drilling and one yellow light process to complete the second substrate assembly, which can maintain the flatness of the surface of the second substrate and is relatively inexpensive to manufacture. In addition, since the laser has a high selection ratio of the insulating material and the metal material, it is relatively easy to control the laser so that the etching of the insulating material does not continue to etch the metal material, thereby avoiding the traditional metal-punching material. problem.

Second embodiment

The difference between the embodiment and the above embodiment is the position of the through hole, the structure of the first redistributed conductor, and the method for forming the same. The same components and steps are denoted by the same reference numerals and will not be described again.

Please refer to FIGS. 4A-4E, which illustrate a manufacturing process of a package having a three-dimensional conduction structure according to a second embodiment of the present invention. intention. Referring to FIG. 4A, the first substrate 110 has a solder pad 116 on its active surface 112 and has a through hole 218. Next, a first redistribution conductor is formed on the active surface 112 of the first substrate 110, the steps of which are disclosed below.

First, as shown in FIG. 4A, conductive bumps 228 are formed on the active surface 112 of the first substrate 110, such as by electroplating or printing. The conductive bump 228 is bulged outward from the active surface 112 of the first substrate 110 and electrically connected to the solder pad 116 to form a ridge of the first redistribution conductor of the embodiment. In the present embodiment, the conductive bump 228 is preferably disposed on the solder pad 116 and extends onto the active surface 112 around the through hole 218. Compared with the first embodiment, in this embodiment, the through hole 218 is separated from the solder pad 116 by the function of rewiring the conductive bump 228, for example, at the edge of the first substrate 110 or where the line is less concentrated. This increases the degree of freedom in the layout of the first substrate line.

Next, as shown in FIG. 4B, a second substrate assembly 220a is provided, including a second substrate 120, pads 122, and an insulating layer 124. The pads 122 and the insulating layer 124 are adjacently disposed on the second substrate 120.

Then, as shown in FIG. 4C, the second substrate assembly 220a is flipped, the pads 122 of the second substrate assembly 220a are soldered to the conductive bumps 228 of the first substrate 110, and the second substrate assembly 220a is bonded to the first substrate. The active surface 112 of the 110, whereby the first redistribution conductor 230 is formed on the active surface 112 of the first substrate 110.

The first redistribution conductor 230 of the present embodiment is formed by a pair of pads 122 of the second substrate 120 and conductive bumps 228 of the first substrate 110. Structurally, the first redistribution conductor 230 includes a raised portion (ie conductive bump 228) and a receiving portion (ie pad 122), and the raised portion (ie conductive bump 228) is directed by the active surface 112 of the first substrate 110 The outer ridge is raised and electrically connected to the solder pad 116. The receiving portion (ie pad 122) is located on the outer side of the active surface 112 and is connected to the ridge portion (ie conductive bump 228), wherein the ridge portion (ie conductive bump 228) and the receiving portion (ie pad 122) constitute a capacity The space 236 is disposed, and the accommodation space 236 is connected to the through hole 218.

Finally, the insulating material 134, the second redistribution conductor 148, the third substrate 140, the solder balls 170, and the like are sequentially formed to complete the package member 200 as shown in FIG. 4D. The second redistribution conductor 148 is located in the through hole 218 and in the accommodating space 236, and the second redistribution conductor 148 is in contact with the receiving portion (ie pad 122), and is received by the receiving portion along the through hole 218 (ie pad 122 ) extends toward the passive surface 114.

Although the first redistribution conductor 230 of the present embodiment is different from the first redistribution conductor 130 of the first embodiment, the first bumping system 230 of the conductive bump 228 and the pad 122 of the embodiment is formed. Similarly, there is a accommodating space, and even if a hole expansion phenomenon occurs during drilling, the filled conductive material (ie, the second redistribution conductor 148) is still in contact with the first redistribution conductor 230, and does not transmit current to the substrate, so The three-dimensional conduction structure of the embodiment can still solve the leakage current problem of the conventional upper silicon via (TSV).

It is worth mentioning that the raised portion (ie conductive bump 228) of the first redistribution conductor 230 of the present embodiment is preferably formed by electroplating, so that the overall structure of the first redistributed conductor 230 is relatively stable and solid, and is difficult to be damage.

On the other hand, in the present embodiment, the through hole 218 is separated from the solder pad 116 by the function of rewiring the conductive bump 228, but the present invention is not limited thereto. In this embodiment, the through hole can also pass through the soldering pad, and the conductive bump can be directly disposed on the soldering pad and also around the through hole, and then soldered together with the pad of the second substrate, and the above structure can also be constructed but the position can also be Different first repeat conductors.

The three-dimensional conduction structure disclosed in the above embodiments of the present invention can vertically pass through the substrate and extend horizontally, and realize three-dimensional space wiring in a package structure in which a plurality of components need to communicate with each other, which can not only reduce the package volume but also shorten the wire path. Further, the first redistribution conductor has a special shape formed by the ridge portion and the receiving portion, and even if a hole is reamed during the laser drilling, no leakage current problem occurs. On the other hand, the manufacturing method of the three-dimensional conduction structure proposed by the present invention can avoid the problem of inaccurate alignment due to the drilling of the front side of the substrate. In addition, the formation of the metal layer protection substrate does not scratch the substrate surface during the laser drilling process.

In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

10‧‧‧ wafer

10a‧‧‧ wafer front

10b‧‧‧ wafer back

12‧‧‧ solder pad

14‧‧‧Opening

16‧‧‧Insulation materials

17‧‧‧ channel

18‧‧‧Electrical materials

20‧‧‧ wafer

22‧‧‧ solder pad

100‧‧‧Package

110‧‧‧First substrate

112‧‧‧Active surface

114‧‧‧ Passive surface

116‧‧‧ solder pad

118‧‧‧through holes

120‧‧‧second substrate

120a‧‧‧Second substrate assembly

122‧‧‧ pads

124‧‧‧Insulation

126‧‧‧ notch

127‧‧‧ openings

128‧‧‧ Conductive layer

128a‧‧‧Uplift

128b‧‧‧Acceptance Department

130‧‧‧First heavy conductor

134‧‧‧Insulation materials

136‧‧‧ accommodating space

140‧‧‧ third substrate

142‧‧‧ solder pad

146‧‧‧through hole

147‧‧‧ openings

148‧‧‧Second heavy conductor

150‧‧‧Insulation

152, 154, 156‧‧‧ patterned conductive layers

162, 164, 166‧‧‧ solder pads

170, 172, 174, 176‧‧‧ solder balls

200‧‧‧Package

218‧‧‧through holes

220a‧‧‧Second substrate assembly

222‧‧‧Protective layer

228‧‧‧Electrical bumps

230‧‧‧First heavy conductor

236‧‧‧ accommodating space

1A to 1F are schematic flow charts showing a method of manufacturing a germanium channel conductor structure.

2A to 2J are views showing a manufacturing flow chart of a package having a three-dimensional conduction structure according to a first embodiment of the present invention.

3A-3E are schematic flow charts showing another method of forming the second substrate assembly in accordance with the first preferred embodiment of the present invention.

4A to 4D are views showing a manufacturing process of a package having a three-dimensional conduction structure according to a second embodiment of the present invention.

110‧‧‧First substrate

120‧‧‧second substrate

122‧‧‧ pads

148‧‧‧Second heavy conductor

170‧‧‧ solder balls

200‧‧‧Package

228‧‧‧Electrical bumps

230‧‧‧First heavy conductor

Claims (22)

A three-dimensional conductive structure is applied to a package, the three-dimensional conductive structure includes: a substrate having an active surface and a passive surface opposite thereto, the substrate having a solder pad and a consistent hole, the solder pad being located on the active surface a first redistribution conductor comprising: a ridge portion bulging outwardly from the active surface of the substrate and electrically connected to the solder pad; and a receiving portion located on an outer side of the active surface and connected to The ridge portion, wherein the ridge portion and the receiving portion form an accommodating space, the accommodating space is in communication with the through hole; a second redistribution conductor is located in the through hole and in the accommodating space, and The second re-distribution system contacts the receiving portion and extends away from the receiving portion toward the passive surface along the through hole; and an insulating material filling the second redistributing conductor and the substrate and the second Between the conductor and the ridge. The structure of claim 1, wherein the through hole is passed through the solder pad. The structure of claim 2, wherein the ridge portion is disposed on the solder pad. The structure of claim 1, wherein the through hole is away from the solder pad. Such as the structure described in claim 4, wherein A raised portion is disposed on the solder pad and extends onto the active surface around the through hole. The structure of claim 1, wherein the ridge is a conductive bump. The structure of claim 1, wherein the ridge portion is integrally formed with the receiving portion. The structure of claim 1, wherein the substrate is a first substrate, the package further comprises a second substrate, the second substrate is located on the active surface side of the first substrate, and The first substrates are arranged substantially in parallel. The structure of claim 8, wherein the first redistribution conductor further comprises a pad disposed on the second substrate and connected to the receiving portion. The structure of claim 8, wherein the receiving portion contacts the second substrate. The structure of claim 8, wherein the first substrate is a CMOS Image Sensor (CIS), and the second substrate is a transparent substrate. The structure of claim 8, wherein the package further comprises a third substrate disposed on the passive surface of the first substrate. The structure of claim 12, wherein the third substrate comprises a solder pad, and the solder pad is away from the passive surface of the first substrate. The structure of claim 12, wherein the solder pad of the third substrate is electrically connected to the solder pad of the second substrate through the first redistribution conductor and the second redistribution conductor. The structure of claim 12, wherein the third substrate is a Digital Signal Processor (DSP). The structure of claim 8, wherein the package further comprises: an insulating layer covering the first substrate and the third substrate; and a solder ball under the insulating layer, and Connected to the second redistributor conductor. A method for manufacturing a three-dimensional conductive structure is applied to a package, the method comprising: providing a substrate having an active surface and a passive surface opposite thereto, the substrate having a solder pad on the active surface; Drilling the active surface of the substrate to the passive surface, thereby forming a uniform aperture; forming a first redistribution conductor on the active surface, the first redistribution system connecting the soldering pad and bulging outward from the active surface, Forming a receiving space in communication with the through hole; filling an insulating material in the through hole and the receiving space; Forming a through hole in the insulating material along the through hole, the end of the through hole exposing the first redistributing conductor; and filling a conductive material in the through hole, thereby forming a contact with the first hole One of the second cloth conductors is a second cloth conductor. The method of claim 17, wherein the substrate is a first substrate, and the step of forming the first redistribution conductor comprises: providing a second substrate assembly having a surface covered with an insulating layer, the insulating layer having a recess exposes a pad; forming a conductive layer on the pad, the inner wall of the recess, and a portion of the insulating layer, wherein the conductive layer and the pad form the first redistribute conductor; and flipping The second substrate assembly is correspondingly bonded to the active surface of the first substrate, wherein the conductive layer on the insulating layer is connected to the solder pad, and is disposed on the pad and in the recess The conductive layer of the wall is opposite the via, whereby the first redistributor conductor is formed on the active surface of the first substrate. The method of claim 18, wherein the step of providing the second substrate assembly comprises: providing a second substrate; forming a patterned metal layer on the second substrate, the patterned metal layer comprising at least one a protective layer and the pad; covering an insulating layer on the protective layer, the pad and the second substrate; Removing a portion of the insulating layer, thereby exposing the protective layer; etching the protective layer; and removing another portion of the insulating layer, thereby forming the recess of the insulating layer, and the recess exposes the Pads. The method of claim 18, wherein the step of providing the second substrate assembly comprises: providing a second substrate and forming a pad on the second substrate; covering an insulating layer on the pad and And removing a portion of the insulating layer, thereby forming the recess of the insulating layer, and the recess exposes the pad. The method of claim 17, wherein the substrate is a first substrate, and the step of forming the first redistribution conductor comprises: forming a conductive bump on the active surface of the first substrate; Providing a second substrate assembly, including a second substrate, a pad, and an insulating layer, the pad and the insulating layer are disposed adjacent to the second substrate; and flipping the second substrate assembly The pad of the second substrate assembly is soldered to the conductive bump of the first substrate, and the second substrate component is bonded to the active surface of the first substrate, thereby forming the first surface of the first substrate A heavy cloth conductor. The method of claim 21, wherein the conductive bump is formed on the solder pad and extends to the through hole On the active surface around it.