TWI382415B - Single write type optical storage record unit - Google Patents

Description

Single write type optical storage recording unit

The present invention relates to an optical storage recording unit, and more particularly to a single write type optical storage recording unit.

A conventional single-write optical storage recording device, such as a once-burning type "copper/amorphous germanium (Cu/α-Si) double-layer recording film" Blu-ray disc of Tokyo Electric Chemical Industry Co., Ltd. (TDK) BD-R), the principle is to use the metal induced crystallization phase change mechanism, so that the amorphous germanium (crystallization temperature is about 700 ~ 800 ° C) can be at a lower heat treatment temperature (500 ° C , approximate laser light burning temperature), by copper-induced amorphous germanium to form crystals, and enhance the reflectance of the recording film layer to blue light, that is, by distinguishing the difference in blue light reflectance between the recording film layers before and after burning to distinguish 0" and "1" signals to achieve the purpose of recording information.

Figure 1 shows a schematic diagram of a conventional single write type optical storage recording device. The conventional write-once optical storage recording device 1 includes a polycarbonate (PC) substrate 11, a silver alloy reflective layer 12, and a first zinc sulfide-yttria (ZnS-SiO ₂ ) dielectric. The layer 13, a double-layer recording layer 14, a second zinc sulfide-yttria dielectric layer 15 and a surface layer 16. The double-layer recording layer 14 includes a copper layer 141 and an amorphous germanium layer 142. The double-layer recording layer 14 is disposed on the first ZnS-SiO ₂ dielectric layer 13 and the second ZnS-SiO ₂ dielectric. Between the layers 15, the amorphous germanium layer 142 and the copper layer 141 are bonded to the first ZnS-SiO ₂ dielectric layer 13 and the second ZnS-SiO ₂ dielectric layer 15, respectively.

However, the double-layer recording layer 14 (Cu/α-Si double-layer recording film) needs to use Cu and The two kinds of Si targets, and the copper layer 141 and the amorphous germanium layer 142 are respectively plated on the sputtering process, so that the conventional single-write optical storage recording device 1 (disc) is time-consuming and low-reduced. Yield.

Therefore, it is necessary to provide an innovative and progressive single-write optical storage recording unit to solve the above problems.

The present invention provides a single write type optical storage recording unit comprising: a reflective layer, a first dielectric layer, a recording layer and a second dielectric layer. The first dielectric layer is disposed on a surface of the reflective layer. The recording layer is disposed on a surface of the first dielectric layer, and the recording layer is made of a bismuth based metal alloy. The second dielectric layer is disposed on a surface of the recording layer.

The recording layer of the write-once optical storage recording unit of the present invention has a high reflectance difference ratio to maintain a high signal-to-noise ratio (SNR), and the recording layer has an excellent optical recording effect. Moreover, the present invention only needs to use a target material (a base metal alloy material) to prepare the recording layer, thereby simplifying the sputtering process, reducing the sputtering time and improving the yield.

Figure 2 is a diagram showing the write-once optical storage recording unit of the present invention. The write-once optical storage recording unit 2 includes a reflective layer 21, a first dielectric layer 22, a recording layer 23, and a second dielectric layer 24. The reflective layer 21, the first dielectric layer 22, the recording layer 23, and the second dielectric layer 24 are preferably formed by a sputtering process. The reflective layer 21 may be made of silver or a silver alloy. In the embodiment, the reflective layer 21 is made of silver. The The thickness of the reflective layer 21 is between 50 and 150 nanometers (nm). In the present embodiment, the thickness of the reflective layer 21 is 100 nm.

The first dielectric layer 22 is disposed on a surface of the reflective layer 21. Wherein, the first dielectric layer 22 is selected from the group consisting of tantalum nitride (Si ₃ N ₄ ), zinc sulfide-yttria (ZnS-SiO ₂ ), zinc oxide (ZnO), yttrium oxide (SiO ₂ ) or trioxide. Aluminum (Al ₂ O ₃ ), the first dielectric layer 22 has a thickness of between 10 and 30 nm. In this embodiment, the first dielectric layer 22 is zinc sulfide-yttria, and the first dielectric layer 22 has a thickness of 10 nm.

The recording layer 23 is disposed on a surface of the first dielectric layer 22, and the recording layer 23 is made of a bismuth based metal alloy. In this embodiment, the recording layer 23 is disposed on one surface of the first dielectric layer 22 by sputtering using a germanium-based metal alloy target (not shown). Preferably, the germanium-based metal The alloy target has a niobium content of ten to forty percent atomic percent (10-40 atomic%) and the remaining percentage is metal content.

It is to be emphasized that the recording layer 23 of the present invention is a single layer of a base metal alloy material. Wherein the metal in the bismuth based metal alloy material is selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), indium (In), cobalt (Co), nickel (Ni), palladium (Pd), a group of platinum (Pt), titanium (Ti), zirconium (Zr), niobium (Nb), gold (Au) or a combination thereof, for example, the metal of the niobium-based metal alloy is Cu, CuAl alloy, PtAu Alloy or CuAlNi alloy. The thickness of the recording layer is between 20 and 80 nm. In the present embodiment, the thickness of the recording layer 23 is 40 nm. The base metal alloy material of the recording layer 23 has a niobium content of 10% to 40% atomic percent (10-40 atomic%), and the remaining percentage is the metal content. In this embodiment, the base metal alloy material It is made of copper bismuth (CuSi) alloy.

The second dielectric layer 24 is disposed on a surface of the recording layer 23. Wherein, the second dielectric layer 24 is selected from the group consisting of tantalum nitride, zinc sulfide-yttria, zinc oxide, tantalum oxide or aluminum oxide, and the thickness of the second dielectric layer 24 is between 10 and 30 nm. . In this embodiment, the second dielectric layer 24 is zinc sulfide-yttria, and the second dielectric layer 24 has a thickness of 25 nm.

In addition, the optical storage recording unit of the present invention further includes a substrate 25 and a surface layer 26 disposed on the other surface of the reflective layer 21, and the surface layer 26 is disposed on the other surface of the second dielectric layer 24. Then, the optical storage recording unit of the present invention can be a single-write optical storage recording device 3 (for example, an optical disk), as shown in FIG. The substrate 25 can be a PC substrate, a germanium substrate or a glass substrate. The thickness of the substrate 25 is between 0.8 and 1.4 mm. The surface layer 26 can be made of PC material or glass. The thickness of the surface layer 26 is Between 0.05 and 0.15 mm. In the present embodiment, the thickness of the substrate 25 is 1.1 mm, and the thickness of the surface layer 26 is 0.1 mm.

The invention is illustrated in detail by the following examples, which are not intended to be construed as limited.

Example:

In the present example, an optical storage recording unit test piece is taken as an example. The optical storage recording unit test piece has the same structure as the single-write optical storage recording device 3 of FIG. 3, and therefore, FIG. The component symbols of the write-once type optical storage recording device 3 will be described. The optical storage recording unit test strip 33 includes a substrate 25, a reflective layer 21, a first dielectric layer 72, a recording layer 23, a second dielectric layer 24, and a surface layer 26. The substrate 25 is a glass substrate, the reflective layer 21 is a silver layer, the first dielectric layer 22 is a ZnS-SiO ₂ layer, and the recording layer 23 is a bismuth based metal alloy (Cu/Si) recording. The second dielectric layer 24 is a ZnS-SiO ₂ layer, and the surface layer 26 is made of PC material.

In this example, an Ag target, a Cu ₈₀ Si ₂₀ (Cu: 80 atomic%; Si: 20 atomic%) alloy target and a ZnS-SiO ₂ target are respectively disposed in a magnetron sputtering chamber to respectively The reflective layer (silver layer) 21 having a thickness of 100 nm is plated on one surface of the glass substrate (thickness: 1.1 mm), and the first dielectric layer (ZnS-SiO ₂ ) 22 having a thickness of 10 nm is plated. On the surface of one of the reflective layers 21, the recording layer 23 (Cu ₈₀ Si ₂₀ ) having a thickness of 40 nm is plated on one surface of the first dielectric layer 22, and the second dielectric having a thickness of 25 nm is plated. A layer (ZnS-SiO ₂ ) 24 is formed on one surface of the recording layer 23, and finally, the surface layer (PC material) 26 having a thickness of 0.1 mm is provided to complete the optical storage recording unit test piece 3.

The blue reflectance value of the optical storage recording unit test piece 3 before and after the burning (ie, before and after the heat treatment, the heat treatment temperature of 500 ° C) is measured by a spectrum detector (N & K analyser), and the reflectance difference before and after the burning is performed. The ratio of more than 20% does meet the requirements for blue reflectance values in mass production in this technical field.

The recording layer 23 of the write-once type optical storage recording unit 2 of the present invention has a high reflectance difference ratio to maintain a high signal-to-noise ratio (SNR), and the recording layer 23 has an excellent optical recording effect. Moreover, the present invention can prepare the recording layer 23 only by using a target material (a base metal alloy material), so that the sputtering process can be simplified, the sputtering time can be reduced, and the yield can be improved.

The above embodiments are merely illustrative of the principles and effects of the invention and are not intended to limit the invention. Therefore, those skilled in the art can make modifications and changes to the above embodiments without departing from the spirit of the invention. The scope of the invention should be as set forth in the appended claims.

1‧‧‧Simplified single-write optical storage recording device

2‧‧‧Single-write optical storage recording unit of the present invention

3‧‧‧Single write optical storage record device

11‧‧‧PC substrate

12‧‧‧ Silver alloy reflective layer

13‧‧‧First zinc sulfide-yttria dielectric layer

14‧‧‧recording layer

15‧‧‧Second zinc sulfide-yttria dielectric layer

16‧‧‧Face

21‧‧‧reflective layer

22‧‧‧First dielectric layer

23‧‧‧recording layer

24‧‧‧Second dielectric layer

25‧‧‧Substrate

26‧‧‧ surface layer

141‧‧‧ copper layer

142‧‧‧Amorphous layer

1 is a schematic view showing a conventional write-once optical storage recording device; FIG. 2 is a schematic view showing a write-once optical storage recording unit of the present invention; and FIG. 3 is a view showing a write-once optical storage recording device of the present invention. .

2‧‧‧Single-write optical storage recording unit of the present invention

21‧‧‧reflective layer

22‧‧‧First dielectric layer

23‧‧‧recording layer

24‧‧‧Second dielectric layer

Claims (29)

A single write type optical storage recording unit includes: a reflective layer; a first dielectric layer disposed on a surface of the reflective layer; and a recording layer disposed on a surface of the first dielectric layer, the The recording layer is made of a bismuth based metal alloy material; and a second dielectric layer is disposed on a surface of the recording layer. The optical storage recording unit of claim 1, wherein the reflective layer is made of silver or silver alloy. The optical storage recording unit of claim 2, wherein the reflective layer is made of silver. The optical storage recording unit of claim 1, wherein the reflective layer has a thickness of 50 to 150 nm. The optical storage recording unit of claim 4, wherein the reflective layer has a thickness of 100 nm. The optical storage recording unit of claim 1, wherein the first dielectric layer is selected from the group consisting of tantalum nitride (Si ₃ N ₄ ), zinc sulfide-yttria (ZnS-SiO ₂ ), zinc oxide (ZnO), and antimony oxide. (SiO ₂ ) or aluminum oxide (Al ₂ O ₃ ). The optical storage recording unit of claim 6, wherein the first dielectric layer is zinc sulfide-yttria. The optical storage recording unit of claim 1, wherein the first dielectric layer has a thickness of 10 to 30 nm. The optical storage recording unit of claim 8, wherein the first dielectric layer has a thickness of 10 nm. The optical storage recording unit of claim 1, wherein the bismuth metal alloy material of the recording layer has a cerium content of 10% to 40% atomic percent (10-40 atomic%), and the remaining percentage is metal content. . The optical storage recording unit of claim 10, wherein the metal in the base metal alloy material is selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), indium (In), cobalt (Co), and nickel. A group of (Ni), palladium (Pd), platinum (Pt), titanium (Ti), zirconium (Zr), niobium (Nb), gold (Au), or a combination thereof. The optical storage recording unit of claim 11, wherein the bismuth based metal alloy material is a copper bismuth (CuSi) alloy material. The optical storage recording unit of claim 1, wherein the recording layer is disposed on a surface of the first dielectric layer by a sputtering method using a germanium-based metal alloy target, and the germanium-based metal alloy target has a germanium content of 10% to 40% atomic percent (10-40 atomic%), the remaining percentage is metal content. The optical storage recording unit of claim 1, wherein the recording layer has a thickness of 20 to 80 nm. The optical storage recording unit of claim 14, wherein the recording layer has a thickness of 40 nm. The optical storage recording unit of claim 1, wherein the second dielectric layer is selected from the group consisting of tantalum nitride, zinc sulfide-yttria, zinc oxide, cerium oxide or aluminum oxide. The optical storage recording unit of claim 16, wherein the second dielectric layer is zinc sulfide-yttria. The optical storage recording unit of claim 1, wherein the second dielectric layer The thickness is 10 to 30 nm. The optical storage recording unit of claim 18, wherein the second dielectric layer has a thickness of 25 nm. The optical storage recording unit of claim 1, further comprising a substrate disposed on the other surface of the reflective layer. The optical storage recording unit of claim 20, wherein the substrate is a PC substrate. The optical storage recording unit of claim 20, wherein the substrate is a germanium substrate or a glass substrate. The optical storage recording unit of claim 20, wherein the substrate has a thickness of 0.8 to 1.4 mm. The optical storage recording unit of claim 23, wherein the substrate has a thickness of 1.1 mm. The optical storage recording unit of claim 20, further comprising a surface layer disposed on the other surface of the second dielectric layer. The optical storage recording unit of claim 25, wherein the surface layer is a PC material. The optical storage recording unit of claim 25, wherein the surface layer is made of glass. The optical storage recording unit of claim 25, wherein the surface layer has a thickness of 0.05 to 0.15 mm. The optical storage recording unit of claim 28, wherein the surface layer has a thickness of 0.1 mm.