TWI377440B - Radiation sensitive resin composition - Google Patents
Radiation sensitive resin composition Download PDFInfo
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- TWI377440B TWI377440B TW094135321A TW94135321A TWI377440B TW I377440 B TWI377440 B TW I377440B TW 094135321 A TW094135321 A TW 094135321A TW 94135321 A TW94135321 A TW 94135321A TW I377440 B TWI377440 B TW I377440B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- General Physics & Mathematics (AREA)
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- Materials For Photolithography (AREA)
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- Chemical Kinetics & Catalysis (AREA)
Description
1377440 九、發明說明: 【發明所屬之技術領域】 本發明係有關放射線敏感性樹脂組成物。 【先前技術】 放射線敏感性樹脂組成物,例如可使用作為:為了形 成以薄膜電晶體(以下有時記載為TFT(thin_f丨Μ ^ transistors))型液晶顯示裝置之絕緣膜、有機乩顯示裝 置中所使用之有機EL絕緣膜、反射型TFT基板中所使用的 擴散反射板、固體攝像元件(以下有時記載為CCD(charge_ Coupled Device))之保護膜等為首之硬化樹脂圖案之材料 (參考日本專利第2933879號公報)。在此TFT之絕緣膜中, 為了獲得更高性能之TFT基板,要求要有在基板上所形成 之TFT π件等底層的高低落差平坦化之性能(參考曰本專 利特開平9-244009號公報)。 此外,近年隨著TFT基板製造所使用的基板玻璃尺寸 之大型化^成物之塗佈方法’已由旋轉塗膜法(_ coating)變換成使用不使基板旋轉之具狹縫狀喷嘴之塗佈 裝置的塗膜方法。在具狹縫狀喷嘴的塗佈裝置十,喷嘴之 材質雖是使用不錄鋼(參考日本專利特開㈣卜⑽州號 公報、特開20〇3-21 1053號公報、特開平8_173875號公 報)’但為了使用職置塗佈,則要求放射線敏感性樹脂組 成物對不鏽鋼基材要有良好的沾濕性。 士本發明人等發現含有某種界面活性劑之放射線敏感性 树月曰組成物’對不錄鋼基材具有良好的沾濕性。 317489 5 1377440 【發明内容】 本發明之目的係提供對不鏽鋼基材有良好的沾濕性之 放射線敏感性樹脂組成物。 亦即,本發明係提供以下之[1]至[10]者。 [1 ] 一種放射線敏感性樹脂組成物,係含有具硬化性之驗 [2]1377440 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a radiation sensitive resin composition. [Prior Art] The radiation-sensitive resin composition can be used, for example, in an organic germanium display device in order to form an insulating film of a liquid crystal display device of a thin film transistor (hereinafter sometimes referred to as a TFT (thin_f)) type. The organic EL insulating film to be used, the diffuse reflection plate used in the reflective TFT substrate, and the solid-state image sensor (hereinafter referred to as a CCD (charge_coupled device) protective film) are the materials of the cured resin pattern (refer to Japan). Patent No. 2933879). In the TFT insulating film, in order to obtain a TFT substrate of higher performance, it is required to have a high-low drop flatness of a bottom layer such as a TFT π formed on a substrate (refer to Japanese Patent Laid-Open No. Hei 9-244009 ). In addition, in recent years, the coating method for large-sized substrates of the substrate glass size used in the manufacture of TFT substrates has been changed from a spin coating method to a slit nozzle using a nozzle that does not rotate the substrate. The coating method of the cloth device. In the coating device with a slit nozzle, the material of the nozzle is made of non-recorded steel (refer to Japanese Patent Laid-Open (I)) (10), and the Japanese Patent Laid-Open No. Hei 20- 3-21 1053, JP-A-8-173875 ) 'But in order to use the job coating, the radiation sensitive resin composition is required to have good wettability to the stainless steel substrate. The inventors of the present invention have found that the radiation-sensitive tree-yellow composition containing a certain surfactant has good wettability to a non-recorded steel substrate. 317489 5 1377440 SUMMARY OF THE INVENTION An object of the present invention is to provide a radiation-sensitive resin composition which has good wettability to a stainless steel substrate. That is, the present invention provides the following [1] to [10]. [1] A radiation-sensitive resin composition containing a test for sclerosing [2]
[3] [4][3] [4]
[5] 可溶性樹脂(A)、醌重氮化合物(B)、溶劑(C)、矽酮 類界面活性劑(D)以及氟類界面活性劑(E):。 上述[1 ]之組成物,其中’具硬化性之鹼可溶性樹脂 (A)為含有:由不飽和羧酸所衍生之構成單元(al)、 與由具硬化性基之不飽和化合物[但,非為不飽和叛 酸]所衍生之構成單元(a2)的共聚物。 上述[2]之組成物,其中’構成單元(a2)中,硬化性 之基為氧雜環丁基(〇Xetany 1 )。 上述[1]至[3]中任一項之組成物,其中,具硬化性之 鹼可溶性樹脂(A)更含有:從由具烯烴性雙鍵之羧酸 酯所衍生之構成單元U31)、由具聚合性碳 -碳不飽和 鍵之芳香族化合物所衍生之構成單元(a32)、由氰化 乙烯基化合物所衍生之構成單元(a33)、以及由N-取 代馬來醯亞胺化合物所衍生之構成單元(a34)所組成 組群中選出之至少1種構成單元(a3)。上述[1 ]至[4]中任一項之組成物,其中,氟類界面活 性劑⑻為含有環氧基之氟類界面活性劑。 述[1]至[5]中任一項之組成物,其中,氟類界面活 性劑(E)之分子量為1〇〇以上1〇〇〇以下。 317489 6 [6] 1377440 [7] 上述[i]至[6]中任一項之組成物,其中,石夕酮類界面 活性劑(D)為聚烷二醇改質矽酮。 [8] 上述[1]至[7]中任一項之組成物,其係適用於具狹縫 狀噴嘴之塗佈裝置。 [9 ] 一種透明硬化樹脂圖案,係由上述[丨]至[8 ]中任一項 之組成物所形成。 [10 ] —種顯示裝置’係具備上述[9 ]所述之透明硬化樹脂 圖案。 【實施方式】 本發明之放射線敏感性樹脂組成物,係含有具硬化性 之驗可溶性樹脂(A )、醌重氮化合物(β )、溶劑([)、石夕酿J類 界面活性劑(D)以及氟類界面活性劑。 本發明所使用之具硬化性驗可溶性樹脂(A ),宜使用含 有由不飽和羧酸所衍生之構成單元(al)、與由具硬化性基 之不飽和化合物[但,不飽和緩酸除了]所衍生之構成單元 φ (a2)的共聚物。 上述之不飽和羧酸’可列舉如,在不飽和單羧酸、不 飽和二羧酸等分子中具有1個或2個以上羧基的不飽和羧 酉久專,具體上可列舉如··丙稀酸、曱基丙稀酸、巴豆酸、 衣康酸、馬來酸、富馬酸、轉;康酸、中康酸等。 月IJ述之具硬化性基的不飽和化合物(但,不飽和幾酸除 外)可列舉如.(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸石 、甲基縮水甘油酯、(甲基)丙烯酸万_乙基縮水甘油酯、(甲 基)丙烯酸3-甲基-3, 4-環氧丁酯、(甲基)丙烯酸3_乙基 317489 7 1377440 .-3, 4_環氧丁酯、(曱基)丙烯酸4-甲基-4, 5-環氧戊酯 '(甲 基)丙烯酸2, 3-環氧環己基甲酯、(甲基)丙烯酸3, 4-環氧 •環己基曱酯、鄒乙烯基笨甲基縮水甘油醚、間乙烯基苯曱 基縮水甘油醚、對乙烯基苯曱基縮水甘油醚、2_乙烯基環 •己烯氧化物、3-乙烯基環己烯氧化物、4_乙烯基環己烯氧 化物等含有環氡基之不飽和化合物; 3-(甲基)丙烯醯氧基甲基氧雜環丁烷、3_甲基_3_ (曱 鲁基)丙烯醯氧基曱基氧雜環丁烷、3_乙基一3一(曱基)丙烯醯 氧基甲基氧雜環丁烷、2-苯基_3一(曱基)丙烯醯氧基甲基氧 雜環丁烧、2-二氟甲基-3-(曱基)丙烯醯氧基甲基氧雜環丁 烷、2-五氟乙基_3_(甲基)丙烯醯氧基甲基氧雜環丁烷、3_ 甲基-3-(曱基)丙烯醯氧基乙基氧雜環丁烷、3_乙基_3_(曱 基)丙締醯氧基乙基氧雜環丁烷、2_苯基_3_(甲基)丙烯醯 氧基乙基氧雜環丁烷、2一三氟甲基_3_(甲基)丙烯醯氧基乙 $軋雜% 丁烷、2-五氟乙基-3-(曱基)丙烯醯氧基乙基氧雜 ♦ % 丁院等含氧雜環丁基之不飽和化合物等。 其中,宜使用3-(甲基)丙烯醯氧基甲基氧雜環丁烷、 3-甲基-3-(甲基)丙烯醯氧基曱基氧雜環丁烷、3_乙基一 ^ (曱基)丙烯醯氧基甲基氧雜環丁烷、2_笨基_3一(甲基)丙烯 醯乳,曱基氧雜環丁烧、2-三氟甲基_3_(甲基)丙稀醯氧基 甲,氧雜後丁院、2-五氟乙基_3_(甲基)丙埽酿氧基甲基氧 2環丁烷、3-f基-3-(曱基)丙烯醯氧基乙基氧雜環丁烷、 乙基3-(甲基)丙烯醯氧基乙基氧雜環丁烷、卜笨基 (曱基)丙烯醯氡基乙基氧雜環丁烷、2_三氟甲基基) 3】7489 8 1377440 衍生上述之構成單元(a33)之氰化乙烯化合物,可列舉 •如:丙烯腈、甲基丙烯腈、α-氯(曱基)丙烯腈等。 • 衍生上述之構成單元(a34)之Ν-取代馬來醯亞胺化合 物,可列舉如:N-曱基馬來醯亞胺、N-乙基馬來醯亞胺、 N-丁基馬來醯亞胺、N_環己基馬來醯亞胺、N_苯甲基馬來 酿亞胺、N-苯基馬來醯亞胺、n-(4-乙醯基苯基)馬來醯亞 胺、N-(2, 6-二乙基苯基)馬來醯亞胺、n-(4-二曱基胺基 鲁-3, 5-二硝基苯基)馬來醯亞胺、N_琥珀醯亞胺基-3_馬來醯 亞胺苯甲酸縮合物(1^1-311〇^11^11^(171-3-maleimidobenzoate)、N-琥珀醯亞胺基-3-馬來醯亞胺丙酸 縮合物、N-破珀醯亞胺基-4-馬來醯亞胺丁酸縮合物、N_ 琥珀醯亞胺基-6-馬來醯亞胺己酸縮合物、N_(卜苯胺基萘 基-4)-馬來醯亞胺、N_[4_(2_苯噚唑基)苯基]馬來醯亞 胺、N-(9-吖啶基)馬來醯亞胺等。 此如之構成單元,可以分別地單獨使用,亦可使用2 籲種以上之組合。 在含有由不飽和羧酸所衍生之構成單元(al)、與由具 硬化基不飽和化合物(但,不飽和羧酸除外)所衍生之構成 單元(a2)之共聚物中,構成單元(al)之比率,相對於共聚 物之構成單元的總莫耳數時,通常為5至50莫耳%,宜為 15至40莫耳%。構成單元(a2)之比率,相對於共聚物之構 成單元的總莫耳數時,通常為95至5〇莫耳%,宜 60莫耳%。 ^ 上述共聚物中,構成單元(al)及構成單元(a2)之比率 317489 10 1377440 如在上述之範圍内時,因安 之·容解过冷p 圖木形成^對顯像液呈現適當 之命解速度,且所得之圖 田 為佳。 >、有王現円硬化性之傾向,因而 r其它構成單:=):;=:= 時二冓成單元(al)之比率,相對於:聚物之:體 構成:' r為5至5°莫耳%,較佳為15至40莫耳%, ?早,2)之比率,相對於共聚物之構成單元,通常為 =至5莫耳%,較佳為85至15莫耳%,其它構成單元之比 率,為〇」至90莫耳%,而以5至8〇莫耳%較佳。 含有構成單元⑻及構成單元(a2)之共聚物可列舉 如:3-乙基-3一?基丙烯酿氧基甲基氧雜環丁院/甲基丙稀 酸苯甲醋/甲基丙婦酸共聚物、3一乙基_3 一甲基丙婦酿氧基 甲基氧雜環丁炫/甲基丙稀酸苯甲醋/甲基丙稀酸/苯乙 籲烯共聚物、3-乙基-3-曱基丙烯醯氧基甲基氧雜環丁烷/曱 基丙烯酸/苯乙烯共聚物、3-乙基_3_曱基丙烯醯氧基甲基 氧雜環丁烷/甲基丙烯酸/甲基丙烯酸環己酯共聚物、= 乙基-3-曱基丙烯醯氧基曱基氧雜環丁烷/甲基丙烯酸/ 曱基丙烯酸曱酯共聚物、3-乙基-3-曱基丙烯醯氧基曱基氧 雜環丁燒/甲基丙烯酸/曱基丙烯酸曱酯/笨乙稀共聚 物、3-乙基-3-甲基丙烯醯氧基曱基氧雜環丁烷/甲基丙稀 酸/曱基丙烯睃第三丁酯共聚物、3-乙基-3-曱基兩稀酿氧 基甲基氧雜環丁烷/曱基丙烯酸/甲基丙烯酸異冰片g旨共 317489 11 1377440 •聚物、3一乙基-3-甲基丙烯醯氧基甲基氧雜環丁烷/甲基丙 '烯酸/丙烯酸笨曱酯共聚物、3-乙基一3_甲基丙烯醯氧基甲 .基氧雜環丁院/甲基丙烯酸/丙稀酸環己酯共聚物、3一乙 基-3-曱基丙烯醯氧基甲基氧雜環丁烷/曱基丙烯酸/丙 烯酸異冰片酯共聚物、3-乙基-3-甲基丙烯醯氧基甲基氧雜 環丁烷/曱基丙烯酸/曱基丙烯酸二環戊酯共聚物、3_乙 基-3-甲基丙烯醯氧.基甲基氧雜環丁烷/甲基丙烯酸/丙 籲烯酸第二丁酯、3-乙基-3-甲基丙烯醯氧基甲基氧雜環丁烷 /甲基丙細酸/本基馬來酿亞胺共聚物、乙基曱基丙 烯醯氧基曱基氧雜環丁烷/甲基丙烯酸/環己基馬來醯亞 胺共聚物等。 含有構成單元(al)及構成單元(a2)之共聚物,以聚苯 乙烯為基準使用凝膠滲透色譜法所求取重量平均分子量, 通常為2, 000至1〇〇, 〇〇〇,較佳為2, 〇〇〇至5〇, 〇〇〇,更佳 為3’ 000至20, 〇〇〇。上述重量平均分子量在2, 〇〇〇至 鲁1 00, 000時,因可維持顯像時之殘膜率而能得到高顯像速 度之傾向,因而為較佳。 本發明之放射線敏感性樹脂組成物中,含有構成單元 (al)及構成單元(a2)之共聚物的含有量,相對於放射線敏 感性樹脂組成物之固形成分之質量分率,通常為5〇至 90%,以60至90%較佳。 本發明所使用之醌重氮化合物(B )之例可列舉如α,2 _ 苯并醌重氮磺酸酯、1,2-萘醌重氮磺酸酯、;[,2_苯并醌重 氮石黃醒胺、1,2-萘醌重氮磺醯胺類等。 317489 12 1377440 ―1,2-萘醌重氮基-5-磺酸酯等六羥基二笨甲酮類之1,2-萘醌重氮基磺酸酯; • 雙(2, 4-二羥基苯基)甲烷-1,2-萘醌重氮基-4-磺酸 酉旨、雙(2, 4-二羥基苯基)曱烷-1,2-萘醌重氮基-5-磺酸 醋、雙(對羥基苯基)曱烷-1,2-萘醌重氮基-4-磺酸酯、雙 (對羥基苯基)甲烷-1,2-萘醌重氮基-5-磺酸酯、1,1,1-三 (對羥基苯基)乙烷-1,2-萘醌重氮基-4-磺酸酯、1,1,卜三 I (對羥基苯基)乙烷-1,2-萘醌重氮基-5-磺酸酯、雙(2, 3,4-二經基苯基)曱烧-1,2-蔡|昆重氮基-4-確酸g旨、雙(2,3,4-二經基苯基)曱烧-1,2 -蔡I昆重氮基-5 -續酸i旨、2, 2’-雙 (2,3,4 -二經基苯基)丙燒-1,2-蔡Ϊ昆重氮基-4-石黃酸醋、 2, 2’-雙(2, 3, 4-三羥基苯基)丙烷-1,2-萘醌重氮基-5-磺 酸酉旨、1,1,3 -參(2,5-二甲基-4-經基苯基)-3-苯基丙烧 -1,2-萘醌重氮基-4-磺酸酯、1,1,3-參(2,5-二甲基-4-羥 基苯基)-3-苯基丙烷-1,2-萘醌重氮基-5-磺酸酯、4,4,-_ [1-[4-[1-[4-羥基苯基]-1-曱基乙基]苯基]亞乙基]雙酚 -1,2-萘醌重氮基-5-磺酸酯、雙(2, 5-二甲基-4-羥基苯基) -2-羥基笨基曱烷-l,2-萘醌重氮基-4-磺酸酯、雙(2, 5-二 曱基-4-羥基苯基)-2-羥基苯基曱烷-1,2-萘醌重氮基-5-磺酸酯、3, 3, 3,,3,-四曱基-1,1,-螺二茚-5, 6, 7, 5,,6,,7,-己醇-1,2-萘醌重氮基-4-磺酸酯、3, 3, 3,,3’-四曱基 -1,Γ-螺二茚-5, 6, 7, 5’,6’,7’-己醇-1,2-萘醌重氮基-5-磺酸酯、2,2,4-三甲基-7,2,,4,-三羥基黃烷-1,2-萘醌重 氮基-4-磺酸酯、2, 2, 4-三曱基-7, 2,,4,-三羥基黃烷-1,2- 14 317489 1377440 萘醋重氮基H酸g旨等(聚㈣苯基)烧類 氮基磺酸酯等。 • 上述之醒重氮化合物⑻,能分別單獨使用,亦可使用 2種以上之組合。本發明中之醒重氮化合物⑻之含量,相 m射線敏感性樹脂組成物之固形分質量分率,通常為 圍内:較佳為5至4°%。醌重氮化合物之含量在上述範 矸’猎由未曝光部與曝光部之溶解速度之差距變大, >因有可以維持高顯像殘膜率之傾向,因而為佳。 本發明切使㈣㈣⑹,例如可料如··乙二醇單 里^、,乙二醇單乙基驗、乙二醇單正丙基醚、乙二醇單 二醇單第心趟、乙二醇單第二丁基越、乙 早第:丁基趟、乙二醇單正戊基驗、乙二醇單正己美 -’、、乙一醇單正庚基越、乙醇單 土 基醚類; 和早正辛基醚等乙二醇單烷 =乙二醇二甲基_、二乙二醇二乙基轉、二乙二醇二 |丙基醚、二乙二醇二異丙基醚、二乙二醇二正 二乙二醇二第二丁絲、二乙二醇 “、、 二乙二醇甲基越乙基鱗、二乙二醇甲基越 正丙基醚、二乙二醇甲基醚異 丁其Μ - —乙一醇甲基醚正 芙醚 醇甲基醚第二丁㈣、二乙二㈣醚第 乙二醇MM正戊_、二乙二醇乙基喊正 二 乙二醇乙基醚異丙基鱗、二乙二醇乙基喊正丁 ;二一乙二醇乙基醚第二丁基驗、二乙二醇乙基峻第三 土驗、-乙:醇乙基_正戊基趟、二乙二醇正丙基喊異 317489 15 乙二醇正丙基鱗正丁基越、二乙二醇正丙基越 ::::、二乙二醇正丙基驗第三丁㈣'二乙二醇正 二:正戊基趟、二乙二醇異丙基醚正丁基醚、二乙二醇 異丙基醚第二丁基醚、二 _ 一乙一知異丙基醚第三丁基醚、二 -%異丙級正戊基驗、二乙二醇正丁基趟第二丁基 :美:乙二醇正丁基峻第三丁㈣、二乙二醇正丁基驗正 丁基_正戊基趟等二乙二醇二燒基_類; 知第- 乙二醇甲基醚乙酸酯、乙二醇乙基醚乙酸酯等乙 醇 院基醚乙酸g旨類; 苯、甲苯、二甲苯 甲基乙基!同、丙綱 Φ己酮等g同類; 乙醇、丙醇、丁醇 醇類; 二醇單_乙酸醋、丙二醇單乙基驗乙酸醋、丙 ,單丙基趟乙酸g旨、二丙二醇單^基峻乙㈣、二丙二 醇早乙基醚乙酸醋等丙二醇烷基醚乙酸醋類; 均三甲苯等芳香族烴類; 曱基戊基酮、甲基異丁基酮、環 己醇、環己醇、乙二醇、甘油等 3~·乙氧基丙酸乙酯、3-甲氧基丙酸曱酯、2_羥基異丁 I曱酉曰、乳酸乙醋、乳酸丁醋、乙酸丁醋、乙酸戊醋、丙 酮酉夂甲酉旨、1,3-丁二醇二乙酸酯等酯類; L之;谷劑可單獨使用,亦可使用2種以上之組合。 其中宜使用二乙二醇二甲基醚、二乙二醇二乙基醚、 醇曱乙醚、3-乙氧基丙酸乙酯、乳酸乙酯、乳酸丁 317489 16 1377440 醋、乙酸丁醋’在使用溶劑組合時’亦宜使用此等溶劑之 组合。 溶劑之較佳組合’可列舉如:二乙二醇二甲基鱗與3_ 乙氧基丙酸乙酯、二乙二醇二曱基喊與乳酸乙酯、二乙二 醇二甲基醚與乳酸丁醋、二乙二醇二甲基醚與乙酸丁醋·;[5] Soluble resin (A), hydrazine diazo compound (B), solvent (C), anthrone-based surfactant (D), and fluorine-based surfactant (E): The composition of the above [1], wherein the 'hardening alkali-soluble resin (A) contains a constituent unit (al) derived from an unsaturated carboxylic acid, and an unsaturated compound having a curable group [however, a copolymer of the constituent unit (a2) derived from unsaturated unsaturated acid. In the composition of the above [2], in the structural unit (a2), the curable group is oxetanyl (〇Xetany 1 ). The composition of any one of the above-mentioned [1] to [3], wherein the hardenable alkali-soluble resin (A) further contains: a constituent unit U31 derived from a carboxylic acid ester having an olefinic double bond, a constituent unit (a32) derived from an aromatic compound having a polymerizable carbon-carbon unsaturated bond, a constituent unit derived from a vinyl cyanide compound (a33), and an N-substituted maleimide compound At least one constituent unit (a3) selected from the group consisting of the derived constituent units (a34). The composition according to any one of the above [1] to [4] wherein the fluorine-based surfactant (8) is a fluorine-based surfactant containing an epoxy group. The composition of any one of [1] to [5] wherein the fluorine-based surfactant (E) has a molecular weight of 1 Å or more and 1 Torr or less. [7] The compound of any one of the above [i] to [6] wherein the alkaloid surfactant (D) is a polyalkylene glycol modified fluorenone. [8] The composition according to any one of the above [1] to [7] which is applied to a coating device having a slit nozzle. [9] A transparent hardened resin pattern formed of the composition of any one of the above [丨] to [8]. [10] A display device comprising the transparent cured resin pattern according to the above [9]. [Embodiment] The radiation-sensitive resin composition of the present invention contains a curable resin (A), a diazonium compound (β), a solvent ([), and a zealand J surfactant (D). And fluorine-based surfactants. The hardenable soluble resin (A) used in the present invention is preferably composed of a constituent unit (al) derived from an unsaturated carboxylic acid and an unsaturated compound having a curable group [however, in addition to the unsaturated acid buffer) a copolymer of the constituent unit φ (a2) derived therefrom. The above-mentioned unsaturated carboxylic acid' may, for example, be an unsaturated carboxylic acid having one or two or more carboxyl groups in a molecule such as an unsaturated monocarboxylic acid or an unsaturated dicarboxylic acid, and specifically, for example, Dilute acid, mercapto acrylic acid, crotonic acid, itaconic acid, maleic acid, fumaric acid, transgenic; co-acid, mesaconic acid, etc. The unsaturated compound having a hardening group as described in the month IJ (except for the unsaturated acid) may, for example, be a glycidyl (meth)acrylate, a (meth)acrylic acid, a methyl glycidyl ester, or a (methyl group). Acetyl methacrylate, 3-methyl-3, 4-epoxybutyl (meth)acrylate, 3-ethyl 317489 7 1377440 .-3, 4_epoxy Ester, 4-methyl-4, 5-epoxypentyl (meth)acrylate 2, 3-epoxycyclohexylmethyl (meth)acrylate, 3, 4-epoxy ring Hexyl decyl ester, Zou vinyl strepto methyl glycidyl ether, m-vinyl benzoyl glycidyl ether, p-vinylphenyl fluorenyl ether, 2 - vinyl ring hexene oxide, 3-vinyl ring An unsaturated compound containing a cyclodecyl group such as a hexene oxide or a 4-vinylcyclohexene oxide; 3-(meth)acryloxymethyloxybutane, 3-methyl_3_ (曱)鲁 ) 醯 醯 曱 曱 曱 氧 氧 氧 、 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 ) ) ) Methoxyoxymethyloxide Heterocyclic butyl, 2-difluoromethyl-3-(indenyl)propenyloxymethyloxetane, 2-pentafluoroethyl_3_(methyl)propenyloxymethyloxalate Cyclobutane, 3-methyl-3-(indenyl)propenyloxyethyloxetane, 3-ethyl-3-(indenyl)propanyloxyethyloxetane, 2 _Phenyl_3_(methyl)propenyloxyethyloxetane, 2-trifluoromethyl_3_(methyl)propene oxime ethoxylate#Niobane, 2-pentafluoroethyl Alkyl-3-(indenyl) propylene oxime oxirane oxime ♦ An unsaturated compound such as an oxetanyl group such as butyl or the like. Among them, 3-(meth) propylene methoxymethyl oxetane, 3-methyl-3-(methyl) propylene fluorenyl oxetane, 3-ethyl group is preferably used. ^ (fluorenyl) propylene methoxymethyl oxetane, 2 - stupyl _3 - (meth) propylene hydrazine, mercapto oxetane, 2-trifluoromethyl _3_ (a Acetyloxymethyl, oxalatine, 2-pentafluoroethyl_3_(methyl)propene, oxymethyloxy 2 cyclobutane, 3-fyl-3-(fluorenyl) Ethyl ethoxyethyl oxetane, ethyl 3-(methyl) propylene oxiranoxy oxetane, phenyl thiol ethyl oxirane Alkane, 2_trifluoromethyl) 3] 7489 8 1377440 The vinyl cyanide compound derived from the above-mentioned constituent unit (a33) may, for example, be acrylonitrile, methacrylonitrile or α-chloro(indenyl)propene. Nitrile and the like. • A hydrazine-substituted maleimide compound derived from the above-mentioned constituent unit (a34), which may be, for example, N-mercaptomaleimine, N-ethylmaleimide, N-butylmaine Yttrium, N_cyclohexylmaleimide, N-benzylated maleimine, N-phenylmaleimide, n-(4-ethylmercaptophenyl)malaya Amine, N-(2,6-diethylphenyl)maleimide, n-(4-didecylaminolu-3,5-dinitrophenyl)maleimide, N _Amber 醯imino-3_maleimide benzoic acid condensate (1^1-311〇^11^11^(171-3-maleimidobenzoate), N-amber quinone imine-3-malay醯iminopropionic acid condensate, N-brodecylimine-4-maleimine butyric acid condensate, N_amber succinimide-6-maleimide hexanoic acid condensate, N_( Bupropionylnaphthyl-4)-maleimide, N_[4_(2-benzoxazolyl)phenyl]maleimide, N-(9-acridinyl)maleimide, etc. The constituent units may be used singly or in combination of two or more. Including a constituent unit (al) derived from an unsaturated carboxylic acid, and being unsaturated with a hardened group In the copolymer of the constituent unit (a2) derived from the compound (except for the unsaturated carboxylic acid), the ratio of the constituent unit (al) is usually 5 to the total number of moles of the constituent unit of the copolymer. 50 mol%, preferably 15 to 40 mol%. The ratio of the constituent unit (a2) is usually 95 to 5 mol%, preferably 60 mol, relative to the total number of moles of the constituent units of the copolymer. %. ^ In the above copolymer, the ratio of the constituent unit (al) and the constituent unit (a2) is 317489 10 1377440. When it is within the above range, it is suitable for the developing solution due to the formation of the solution. The rate of life is solved, and the obtained map is better. >, there is a tendency for the king to be hardened, and thus r other constituents: =):;=:= ratio of the two units (al), relative The composition of the polymer: 'r is 5 to 5 ° mol%, preferably 15 to 40 mol%, early, 2), relative to the constituent unit of the copolymer, usually = to 5 mol%, preferably 85 to 15 mol%, the ratio of other constituent units is from 〇" to 90 mol%, and preferably from 5 to 8 mol%. The copolymer containing the constituent unit (8) and the constituent unit (a2) may, for example, be 3-ethyl-3-one. Alkyl propylene oxymethyl oxetane / methyl acrylate benzyl acetate / methyl propyl ketone copolymer, 3-ethyl _ 3 methyl propyl oxymethyl oxetane Hyun/methyl acrylate benzyl acetate / methyl acrylate / styrene copolymer, 3-ethyl-3-mercapto propylene methoxy methyl oxetane / methacrylic acid / benzene Ethylene copolymer, 3-ethyl_3_mercaptopropenyloxymethyloxetane/methacrylic acid/cyclohexyl methacrylate copolymer, = ethyl-3-mercaptopropenyloxy Mercapto oxetane / methacrylic acid / decyl methacrylate copolymer, 3-ethyl-3-mercapto propylene oxime oxirane oxetane / methacrylic acid / decyl methacrylate /Stupid ethylene copolymer, 3-ethyl-3-methylpropenyloxydecyloxybutane/methylacrylic acid/mercaptopropene tert-butyl ester copolymer, 3-ethyl- 3-fluorenyl dilute oxymethyloxetane/mercaptoacrylic acid/isobutyl methacrylate g 317489 11 1377440 • Polymer, 3-ethyl-3-methylpropenyloxy Oxycyclobutane/methylpropenoic acid/coumyl acrylate copolymer, 3-ethyl-3_A Acryloxymethoxymethyl oxetane / methacrylic acid / cyclohexyl acrylate copolymer, 3-ethyl-3-mercapto propylene methoxymethyl oxetane / fluorenyl Acrylic acid/isobornyl acrylate copolymer, 3-ethyl-3-methylpropenyloxymethyloxetane/mercaptoacrylic acid/dicyclopentanyl acrylate copolymer, 3-ethyl-3 -Methyl propylene oxime. Methyl oxetane / methacrylic acid / propenic acid second butyl ester, 3-ethyl-3-methylpropenyloxymethyl oxetane / Methylpropionic acid/local-based maleimide copolymer, ethylmercaptopropenyloxydecyloxybutane/methacrylic acid/cyclohexylmaleimide copolymer, and the like. The copolymer containing the constituent unit (al) and the constituent unit (a2) is subjected to gel permeation chromatography to determine the weight average molecular weight based on polystyrene, usually 2,000 to 1 Torr, 〇〇〇, Good for 2, 〇〇〇 to 5〇, 〇〇〇, better for 3' 000 to 20, 〇〇〇. When the weight average molecular weight is from 2, 〇〇〇 to 1,000,000, it is preferable because the residual film ratio at the time of development can be maintained to obtain a high development speed. In the radiation-sensitive resin composition of the present invention, the content of the copolymer of the constituent unit (al) and the constituent unit (a2) is usually 5 Å based on the mass fraction of the solid content of the radiation-sensitive resin composition. Up to 90% is preferably from 60 to 90%. Examples of the hydrazine diazo compound (B) used in the present invention include, for example, α,2 benzoquinonediazonium sulfonate, 1,2-naphthoquinonediazide sulfonate, and [,2-benzoindole Diazonite yellow amine, 1,2-naphthoquinone diazosulfonamide, and the like. 317489 12 1377440 1,2-naphthoquinonediazidesulfonate of hexahydroxydibenzophenone such as 1,2-naphthoquinonediazo-5-sulfonate; • bis(2,4-dihydroxyl) Phenyl)methane-1,2-naphthoquinonediazo-4-sulfonic acid, bis(2,4-dihydroxyphenyl)decane-1,2-naphthoquinonediazo-5-sulfonic acid Vinegar, bis(p-hydroxyphenyl)decane-1,2-naphthoquinonediazo-4-sulfonate, bis(p-hydroxyphenyl)methane-1,2-naphthoquinonediazo-5-sulfonate Acid ester, 1,1,1-tris(p-hydroxyphenyl)ethane-1,2-naphthoquinonediazo-4-sulfonate, 1,1,b-I (p-hydroxyphenyl)ethane -1,2-naphthoquinonediazo-5-sulfonate, bis(2,3,4-di-perphenyl) oxime-1,2-cai|kundiazo-4-acid 、, bis(2,3,4-di-phenyl) oxime-1,2-Cai Ikundiazide-5-continuation acid, 2, 2'-bis (2,3,4 - Di-phenylphenyl)propane-1,2-caiwu Kun Diazo-4-platinic acid vinegar, 2,2'-bis(2,3,4-trihydroxyphenyl)propane-1,2 -naphthoquinonediazo-5-sulfonic acid oxime, 1,1,3-parade (2,5-dimethyl-4-transphenyl)-3-phenylpropan-1,2-naphthalene醌Diazo-4-sulfonate, 1,1,3-parameter 2,5-Dimethyl-4-hydroxyphenyl)-3-phenylpropane-1,2-naphthoquinonediazo-5-sulfonate, 4,4,-_ [1-[4-[ 1-[4-hydroxyphenyl]-1-indolylethyl]phenyl]ethylidene]bisphenol-1,2-naphthoquinonediazo-5-sulfonate, bis(2, 5-di) Methyl-4-hydroxyphenyl)-2-hydroxyphenyl decane-l,2-naphthoquinonediazo-4-sulfonate, bis(2,5-didecyl-4-hydroxyphenyl) 2-hydroxyphenyl nonane-1,2-naphthoquinonediazo-5-sulfonate, 3,3,3,,3,-tetradecyl-1,1,-spirobi-5, 6, 7, 5, 6, 6, 7, hexanol-1,2-naphthoquinonediazide-4-sulfonate, 3, 3, 3,, 3'-tetradecyl-1, fluorene- Spirobiindole-5, 6, 7, 5',6',7'-hexanol-1,2-naphthoquinonediazo-5-sulfonate, 2,2,4-trimethyl-7, 2,4,-trihydroxyflavan-1,2-naphthoquinonediazo-4-sulfonate, 2,2,4-trimethyl-7,2,,4,-trihydroxyflavan- 1,2- 14 317489 1377440 Naphthalene vinegar diazo H acid g is equivalent to (poly(tetra)phenyl) flammable nitrogen sulfonate. • The above-mentioned awakening diazonium compound (8) can be used singly or in combination of two or more. The content of the awake heavy nitrogen compound (8) in the present invention, and the solid content mass fraction of the phase ray sensitive resin composition are usually in the range of preferably 5 to 4% by weight. The content of the quinonediazide compound is larger in the above-described range, and the difference between the dissolution rate of the unexposed portion and the exposed portion is increased, and it is preferable because the high residual film ratio can be maintained. The present invention cuts (4) (4) (6), for example, such as ethylene glycol monoethyl, ethylene glycol monoethyl, ethylene glycol mono-n-propyl ether, ethylene glycol monodiol single heart, bismuth Alcohol monobutyl ketone, B, early: butyl hydrazine, ethylene glycol mono-n-pentyl test, ethylene glycol mono-n-butyl--, ethyl alcohol mono-n-heptyl, ethanol mono-ethyl ether; Ethylene glycol monoalkane such as early n-octyl ether = ethylene glycol dimethyl _, diethylene glycol diethyl propylene, diethylene glycol di propyl ether, diethylene glycol diisopropyl ether, Diethylene glycol di-n-diethylene glycol di-second butadiene, diethylene glycol ",, diethylene glycol methyl ethyl acephate, diethylene glycol methyl propyl ether, diethylene glycol Ethyl isobutyl ketone - ethyl ketone methyl ether n- propyl ether methyl ether second butyl (tetra), diethylene di(tetra) ether glycol MM n-pentyl, diethylene glycol ethyl shunt diethylene glycol Ethyl ether isopropyl scale, diethylene glycol ethyl sulfonate; diethylene glycol ethyl ether second butyl test, diethylene glycol ethyl stern third test, - B: alcohol ethyl _ n-pentyl hydrazine, diethylene glycol n-propyl shouting 317489 15 ethylene glycol positive Squama n-butyl, diethylene glycol n-propyl group::::, diethylene glycol n-propyl test third butyl (four) 'diethylene glycol di-n-n-n-pentyl hydrazine, diethylene glycol isopropyl ether Butyl ether, diethylene glycol isopropyl ether, second butyl ether, bis-yiyi isopropyl ether, tert-butyl ether, di-% isopropyl-n-pentyl, diethylene glycol n-butyl趟Second butyl: US: ethylene glycol n-butyl ternary butyl (tetra), diethylene glycol n-butyl butyl butyl butyl phthalate, etc. Ethyl ether ether acetic acid such as ethyl ether acetate, ethylene glycol ethyl ether acetate; benzene, toluene, xylene methyl ethyl! same, propyl hexanone, etc.; ethanol, C Alcohol, butanol alcohol; diol mono-acetic acid vinegar, propylene glycol monoethyl acetate acetate, propyl, monopropyl hydrazine acetic acid g, dipropylene glycol mono thiophene (IV), dipropylene glycol early ethyl ether acetate vinegar, etc. Propylene glycol alkyl ether acetate vinegar; aromatic hydrocarbons such as mesitylene; decyl amyl ketone, methyl isobutyl ketone, cyclohexanol, cyclohexanol, ethylene glycol, glycerin, etc. 3~·ethoxyl Ethyl propionate, 3-methyl Ethyl propyl propionate, 2-hydroxyisobutyl I oxime, ethyl lactic acid, butyl lactic acid, butyl acetate, valeric acetate, acetone acetaminophen, 1,3-butanediol diacetate And other esters; L; the granules may be used singly or in combination of two or more. It is preferred to use diethylene glycol dimethyl ether, diethylene glycol diethyl ether, decyl ether, 3-ethyl Ethyl oxypropionate, ethyl lactate, lactic acid butyl 317489 16 1377440 vinegar, butyl acetate vinegar 'when using a solvent combination' is also preferred to use a combination of such solvents. A preferred combination of solvents can be exemplified by: Alcohol dimethyl scales and ethyl 3-ethoxypropionate, diethylene glycol dimercapto and ethyl lactate, diethylene glycol dimethyl ether and butyl lactic acid, diethylene glycol dimethyl ether Butyl acetate
二乙二醇二乙基醚與3-乙氧基丙酸乙酯、二乙二醇二乙基 醚與乳酸乙酯、二乙二醇二乙基醚與乳酸丁酯、/二乙二醇 二乙基醚與乙酸丁酯、二乙二醇甲基醚乙基醚與3_乙氧基 丙酸乙酯、二乙二醇甲基醚乙基醚與乳酸乙酯、二乙二醇 甲基趟乙基_乳酸η旨、二乙二醇甲㈣乙絲與乙酸 丁酯、3-乙氧基丙酸乙醋與乳酸乙醋、3_乙氧基丙酸乙醋 與乳酸丁醋、3-乙氧基丙酸乙醋與乙酸丁酯、二乙二醇甲 基醚乙基醚與3一乙氧基丙酸乙醋與乳酸丁醋、二乙二醇甲 基趟乙基趟與3-乙氧基丙酸乙醋與乙酸丁醋、二乙二醇^ 基起乙基鱗與3-乙氧基丙酸乙g旨與乳酸丁⑽與乙酸丁醋 ❿等’較佳者可例舉如:二乙二醇甲基趟乙基趟與3-乙氧基 丙酸乙酯與乳酸丁酯、二乙二醇甲基職乙基越與3-乙氧基 丙酸乙酉旨與乙酸丁酯等,特佳者為··二乙二醇甲基麵乙基 鱗與3乙氧基丙酸乙醋與乳酸丁醋與乙酸丁醋。 折旦溶劑(C)之含有量,相對於放射線敏感性樹脂組成物之 貝罝分率時’較佳為5〇至95質量%,更佳為70至9〇質量 時 二令適應在只有自狹縫狀喷嘴塗佈步驟之塗佈裝置 〆合劑(C)之含有量,與上述之相同基準,以75至90 317489 1377440 質量%最佳。又,除了自狹缝狀喷嘴塗佈步驟之外,亦適合 ‘在有將組成物塗佈在基板上使旋轉步驟之塗佈裝置時,溶 •劑(C)之含有量,與上述之相同基準下,以65至80質量% 最佳。 溶劑(C)之含有量在上述範圍時,因有形成斑點產生較 少之塗膜傾向,因而較佳。 本發明所使用之矽酮類界面活性劑之例可列舉如:商 品名 DC3PA、SH7PA、DC11PA、SH21PA、SH28PA、SH29PA、 鲁 SH30PA、ST80PA、SH83PA、SH86PA、SH550、SH710C東麗道 * 康寧矽酮(股)製)、KP32卜 KP322、KP323、KP324、KP326、 KP340或KP34U信越矽酮(股)製)等矽酮類塗平劑; 商品名 BY16-004、BY16-036、BY16-880、FS1265、 SH8400、SF8410、SH842卜 SH8427、SF8428、SH203、SH710、 SH3746、SH3748、SH3749、SH3771M、SH3772M、SH3773M、 SH3775M、SH3775、SH8400、SH8700、SH28PA(東麗道康寧 φ 矽酮(股)製)、商品名 KF-35卜 KF-352、KF-353、KF-354L、 KF-355A、KF-615A、KF-945、KF-618、KF-60U、KF-6015C信 越矽酮(股)製);商品名 TSF4440、TSF4441、TSF4445、 TSF4446、TSF4452、TSF4453、TSF4460(GE 東芝矽酮(股) 製)、PS558(United Chemical Technologies,inc 公司 製)、Q2-5211(Dow Corning Corp 公司製)、SILWET 408、 L-7210、L-7200C以上,任一種均為 OSi Specialties 公司 製)等聚醚改質矽酮油等。 矽酮類界面活性劑(D)以使用聚醚改質矽酮油較佳。 18 317489 1377440 • 矽酮類界面活性劑(D)之含量,相對於放射線敏感性樹 脂組成物之質量分率,以!至1〇〇〇 ppm為宜,較佳為1〇 至500 ppm,更佳為50至300 ppm。矽酮類界面活性劑(d) 之含量,在上述範圍内時,因有形成斑點產生較少之塗膜 傾向’因而為佳。 本發明使用之氟類界面活性劑(E),係以具環氧基之氟 類界面活性劑者為宜。具環氧基之氟類界面活性劑之例可 鲁列舉如:通式(E1)至(E4)所示化合物。 化學式(E1)至(E4)Diethylene glycol diethyl ether and ethyl 3-ethoxypropionate, diethylene glycol diethyl ether and ethyl lactate, diethylene glycol diethyl ether and butyl lactate, / diethylene glycol Diethyl ether and butyl acetate, diethylene glycol methyl ether ethyl ether and ethyl 3-ethoxypropionate, diethylene glycol methyl ether ethyl ether and ethyl lactate, diethylene glycol Based on ethyl _ lactic acid η, diethylene glycol methyl (tetra) acetyl acetate and butyl acetate, 3-ethoxypropionic acid ethyl vinegar and lactic acid ethyl acetate, 3 - ethoxy propionate ethyl vinegar and lactic acid butyl vinegar, Ethyl 3-ethoxypropionate with butyl acetate, diethylene glycol methyl ether ethyl ether and ethyl 3-ethoxypropane acetate and butyl lactic acid, diethylene glycol methyl hydrazine ethyl hydrazine Ethyl 3-ethoxypropionate and butyl vinegar, diethylene glycol, ethyl sulphate and 3-ethoxypropionic acid, glycerol, butyl acrylate (10) and acetic acid butyl acetate, etc. For example, diethylene glycol methyl hydrazine ethyl hydrazine and ethyl 3-ethoxypropionate and butyl lactate, diethylene glycol methyl ethyl ester and 3-ethoxypropionate Butyl acetate, etc., especially good ones are diethylene glycol methyl ethyl sulphate and 3 ethoxy propionate vinegar With lactic acid butyl vinegar and acetic acid butyl vinegar. The content of the solvent (C) is preferably from 5 〇 to 95% by mass, more preferably from 70 to 9 〇, in terms of the shelling fraction of the radiation-sensitive resin composition. The content of the coating device chelating agent (C) in the slit nozzle coating step is preferably 75 to 90 317489 1377440% by mass based on the same basis as described above. Further, in addition to the slit-shaped nozzle coating step, it is also suitable for the case where the solvent (C) is contained in the coating device in which the composition is applied to the substrate to rotate the step, and is the same as described above. Under the benchmark, it is best at 65 to 80% by mass. When the content of the solvent (C) is in the above range, it tends to cause a small amount of coating film to form spots, which is preferable. Examples of the anthrone-based surfactant used in the present invention include, for example, trade names DC3PA, SH7PA, DC11PA, SH21PA, SH28PA, SH29PA, Lu SH30PA, ST80PA, SH83PA, SH86PA, SH550, SH710C Toray Road * Corning ketone (share) system, KP32, KP322, KP323, KP324, KP326, KP340 or KP34U, the company is a ketone-based leveling agent; trade names BY16-004, BY16-036, BY16-880, FS1265 , SH8400, SF8410, SH842, SH8427, SF8428, SH203, SH710, SH3746, SH3748, SH3749, SH3771M, SH3772M, SH3773M, SH3775M, SH3775, SH8400, SH8700, SH28PA (Dongli Dao Kangning φ ketone) KF-35, KF-352, KF-353, KF-354L, KF-355A, KF-615A, KF-945, KF-618, KF-60U, KF-6015C Shin-Ethanone (share)); TSF4440, TSF4441, TSF4445, TSF4446, TSF4452, TSF4453, TSF4460 (GE Toshiba Ketone Co., Ltd.), PS558 (manufactured by United Chemical Technologies, Inc.), Q2-5211 (manufactured by Dow Corning Corp), SILWET 408, L-7210, L-7200C or higher, either one is OSi Speci Alties company and other polyether modified ketone oil. The anthrone-based surfactant (D) is preferably a polyether-modified anthrone oil. 18 317489 1377440 • The content of the anthrone-based surfactant (D) relative to the mass fraction of the radiation-sensitive resin composition, to! It is preferably 1 to ppm, preferably 1 to 500 ppm, more preferably 50 to 300 ppm. When the content of the anthrone-based surfactant (d) is within the above range, it tends to cause a small amount of coating film to form spots. The fluorine-based surfactant (E) used in the present invention is preferably a fluorine-based surfactant having an epoxy group. Examples of the epoxy group-containing surfactants of the epoxy group can be exemplified by the compounds represented by the formulae (E1) to (E4). Chemical formula (E1) to (E4)
PfcF2|cH2^CH-CH2 (E1) f3c、 f3c/CfvCF2}xCH2-c\h7ch2 (E2)PfcF2|cH2^CH-CH2 (E1) f3c, f3c/CfvCF2}xCH2-c\h7ch2 (E2)
f-(cf24-〇 VF-(cf24-〇 V
•?F—CH2—CH-CH2 cf3 V (E3) h{cf2^-ch2^o-ch2^ch-ch2 (E4) 式中,w、x、y及z,分別為獨立之丨至2〇之整數。 鲁式(E1)所示化合物之例如2, 3, 3, 4, 4, 4-七氟丁基) 環氧乙烧、(2,2,3,3,4,4,5,5,5 —九氟戊基)環氧乙烧、 2’ 3’ 3’ 4’ 4’ 5’ 5’ 6’ 6’ 7’ 7’ 7-十三氟庚基)環氧乙院、 2’ 2’ 3, 3, 4’ 4’ 5, 5’ 6, 6, 7, 7, 8, 8, 9, 9, 9-十七氟壬基)環氧 乙燒、(2, 2, 3, 3, 4, 4, 5, 5, 6, 6’ 7, 7’ 8’ 8’ 9’ 9’ 10’ 1〇, U,u, 11 一二十一氟十一基)環氧乙烷等。 式⑽所示化合物之例如:[2, 3, 3, 3-四氟-2-(三氟甲 ^丙基]環氧乙烧、[2,2,3,3,4,5,5,5_八^4_(三氟曱基) 戍基]環氧乙炫、[2,2,3,3,4,4,5,5,6,7,7,7_十二以_ 317489 1377440 (三氣甲基)庚基]環氧乙燒、[2,2,3,3,4,4,5 5 6 6 7 7 9 9, 9-十六H(三氟甲基)壬基]環氧乙烧、 齓甲基)十一基]環氧乙烷等。 式⑽所示化合物,例如有:[2,3,33_四氣_2一( ^基)丙基]環氧乙烧、[2,3, 3, 3-四氣庚氣丙氧基) 丙基]環氧乙烷等。 式(E4)所示化合物,例如有:縮水甘油基2, 2, & 3四 氟丙㈣、縮水甘油基2’2’3,3,4,4,5,5一八氣戍基越、縮 水甘油基2’2, 3, 3, 4, 4, 5, 5, 6,6 7,7一十二氟庚絲、縮水 甘油基 2, 2’ 3, 3, 4’ 4, 5, 5, 6, 6, 7, 7, 8, 8, 9, 9-十六氟壬基 醚等。 式(E1)及(E2)所示有機氟類界面活性劑之市售品,·可 列舉如:E-1430、E-1630、E-1830、E-2030、E-3430、E-3630、 E-3830、E-5244、E-5444、E-5644、E-5844(以上任一種均 馨為泰金化成品銷售(股)製)等。 氣類界面活性劑(E)之分子量,以在1〇〇以上1〇〇〇以 下為佳。 氟類界面活性劑(E)之含量,相對於放射線敏感性樹脂 組成物之質量分率,以1至1000 ppm為宜,較佳為10至 5 0 0 ppm ’更佳為5 〇至3 〇 〇 ppm。氟類界面活性劑(E)之含 量’在上述範圍内時,因有形成斑點產生較少之塗膜傾向, 因而為佳。 1 又氟類界面活性劑(E)之含量,相對於矽酮類界面活性 20 317489 ^//440 _刟(D)與氟類界面活性劑(E)之總有效量質量分率,以1〇 至50質量%者為佳。 本發明之玫射線敏感性樹脂組成物中,亦可含有聚合 起始(F)夕元盼化合物(G)、交聯劑(η)、聚合性單體 (〇、矽烷偶合劑(J)等其他成分。 上述之聚合起始劑可列舉如:作為陽離子聚合起始劑 之鐵鹽。鍚鹽係由錯合陽離子與來自路易士酸之陰離子所 鲁構成。 - 上述之錯合陽離子之具體例可列舉如:二苯基鎭、雙 _ (對-甲苯基)鎖、雙(對第三丁基苯基)錤、雙(對_辛基苯基) 鐄、雙(對-十八烧基苯基)鍈、雙(對辛氧基苯基)錤、雙(對 2八烷氧基苯基)鐄、苯基(對十八烷氧基苯基)錤、(對曱 本基)(對-異丙基苯基)鋼、三苯基疏、參(對甲苯基)硫、 參(對異丙基苯基)锍、參(2, 6-二甲基苯基遍、參(對第三 丁基本基)锍、參(對氰苯基)毓、參(對氯苯基)毓、二甲基 Φ (甲氧基)銃、二甲基(乙氧基)鏑、二甲基(丙氧基)鏡、二 ?基(丁氧基)銃、二曱基(辛氧基)蔬、二甲基(十八烧氧基) 毓、甲基(異丙氧基)鏡、二甲基(第三丁氧基)硫、二曱 基(環戊氧基)锍、二甲基(環己氧基)銃、二甲基(氟甲氧基) 毓、二f基(2-氯乙氧基)疏、二甲基(3_溴丙氧基)蔬、二 甲基(4-氰基丁氧基)疏、二?基(8_石肖基辛氧基遍、二曱 基(18-三氟甲基十人院氧基)蔬、二甲基(2_經基異丙氧基) 疏、二甲基(參(三氣甲基)甲基)毓等,*以雙(對甲苯基) 鎖(對曱苯基)(對-異丙基苯基)鎖、雙⑽帛三丁基苯基) 317489 21 1377440•?F—CH2—CH-CH2 cf3 V (E3) h{cf2^-ch2^o-ch2^ch-ch2 (E4) where w, x, y, and z are independent 丨 to 2〇 The integer. For example, the compound of the formula (E1) is, for example, 2, 3, 3, 4, 4, 4-heptafluorobutyl) Ethylene bromide, (2, 2, 3, 3, 4, 4, 5, 5, 5 —9-fluoropentyl) Ethylene Ethylene, 2' 3' 3' 4' 4' 5' 5' 6' 6' 7' 7' 7-Tetrafluoroheptyl) Epoxy Ethylene, 2' 2' 3, 3, 4' 4' 5, 5' 6, 6, 7, 7, 8, 8, 9, 9, 9-heptadecafluoromethyl) Ethylene bromide, (2, 2, 3, 3, 4, 4, 5, 5, 6, 6' 7, 7' 8' 8' 9' 9' 10' 1〇, U, u, 11 Twenty-one fluorine eleven) Ethylene oxide and the like. For example, a compound represented by the formula (10): [2, 3, 3, 3-tetrafluoro-2-(trifluoromethylpropyl)oxirane, [2, 2, 3, 3, 4, 5, 5, 5_八^4_(Trifluoromethyl) fluorenyl] Epoxy Ethylene, [2,2,3,3,4,4,5,5,6,7,7,7_12 to _ 317489 1377440 (trimethylmethyl)heptyl]epoxy Ethylene, [2,2,3,3,4,4,5 5 6 6 7 7 9 9, 9-hexaH(trifluoromethyl)indenyl] Ethylene oxide, hydrazine methyl) eleven base] ethylene oxide and the like. The compound represented by the formula (10) is, for example, [2,3,33_tetraqi_2-((yl)propyl)epoxyethylene, [2,3,3,3-tetraheptanepropoxyl). Propyl] ethylene oxide and the like. The compound represented by the formula (E4) is, for example, glycidyl 2, 2, & 3 tetrafluoropropane (tetra), glycidyl 2'2'3, 3, 4, 4, 5, 5 - 18 gas fluorenyl , glycidyl 2'2, 3, 3, 4, 4, 5, 5, 6, 6 7, 7 - 12-fluoroheptane, glycidyl 2, 2' 3, 3, 4' 4, 5, 5, 6, 6, 7, 7, 8, 8, 9, 9-hexadecafluorodecyl ether and the like. Commercial products of the organic fluorine-based surfactants represented by the formulae (E1) and (E2) include, for example, E-1430, E-1630, E-1830, E-2030, E-3430, and E-3630. E-3830, E-5244, E-5444, E-5644, E-5844 (all of the above are all made by Taijin Chemicals Sales Co., Ltd.). The molecular weight of the gas-based surfactant (E) is preferably 1 Torr or more and 1 Torr or less. The content of the fluorine-based surfactant (E) is preferably from 1 to 1000 ppm, more preferably from 10 to 50,000 ppm, more preferably from 5 to 3 Å, based on the mass fraction of the radiation-sensitive resin composition. 〇ppm. When the content of the fluorine-based surfactant (E) is within the above range, it tends to be less likely to form a coating due to the formation of spots. 1 The content of the fluorine-based surfactant (E), relative to the anthraquinone interface activity 20 317489 ^ / / 440 _ 刟 (D) and the fluorine-based surfactant (E) total effective mass fraction, to 1 It is better to be 50% by mass. The composition of the rose-ray sensitive resin of the present invention may further comprise a polymerization starting (F) compound (G), a crosslinking agent (η), a polymerizable monomer (an oxime, a decane coupling agent (J), etc. Other components: The above-mentioned polymerization initiator may, for example, be an iron salt as a cationic polymerization initiator. The phosphonium salt is composed of a complex cation and an anion derived from Lewis acid. - Specific examples of the above-mentioned defective cation For example, diphenyl hydrazine, bis (p-tolyl) cleavage, bis(p-butylphenyl) fluorene, bis(p-octylphenyl) fluorene, bis(p-octadecanyl) Phenyl)anthracene, bis(p-octyloxyphenyl)anthracene, bis(p-octadecyloxyphenyl)anthracene, phenyl(p-octadecyloxyphenyl)anthracene, (p-decyl) P-isopropylphenyl) steel, triphenyl sulfonium, cis (p-tolyl) sulphide, cis (p-isopropylphenyl) fluorene, ginseng (2, 6-dimethylphenyl ubiquinone, ginseng (pair Tertiary butyl group) hydrazine, ginseng (p-cyanophenyl) fluorene, ginseng (p-chlorophenyl) fluorene, dimethyl Φ (methoxy) hydrazine, dimethyl (ethoxy) hydrazine, dimethyl (propoxy) mirror, Di-(butoxy)anthracene, diindolyl (octyloxy) vegetable, dimethyl (octadecyloxy) hydrazine, methyl (isopropoxy) mirror, dimethyl (third butoxide) Sulfhydryl, diindenyl (cyclopentyloxy) hydrazine, dimethyl (cyclohexyloxy) fluorene, dimethyl (fluoromethoxy) hydrazine, di-f-based (2-chloroethoxy), Dimethyl (3 - bromopropoxy) vegetable, dimethyl (4-cyanobutoxy) sparing, di-yl (8-stone Schottyl octyloxy, di-decyl (18-trifluoromethyl-10- Human oxy) vegetable, dimethyl (2-pyridylisopropoxy), dimethyl (paraxyl (methyl)methyl) hydrazine, etc., * double (p-tolyl) lock (pair Phenylphenyl)(p-isopropylphenyl)-locked, bis(10)decyltributylphenyl) 317489 21 1377440
鐄、三笨基锍、參(對第三丁基苯基)毓等較佳。 六 酸 上述來自珞易士酸之陰離子的具體例,可列舉如 2酸鹽、六氣碎酸鹽、六氣鏵酸鹽、肆(五氣苯基)爛 -荨,較佳者為六氟銻酸鹽、肆(五氟苯基)硼酸鹽。 上述之錯合陽離子以及來自 組合。 路易士酸之陰離子可隨意 ,光陽離子聚合起始劑(F)之具體例,可列舉如:二笨美 #鐄六氟磷酸鹽、雙(對甲笨基)鎭六氟磷酸鹽、雙(對5 基笨基)錤六氟磷酸鹽、雙(對辛基笨基)鐫六氟磷酸鹽:雙 (對十八烷基苯基)鎖六氟磷酸鹽、雙(對辛氧基笨基)錤: 氟磷酸鹽、雙(對十八烷氧基苯基)錤六氟磷酸鹽、&基'/對 十八烷氧基苯基)錤六氟磷酸鹽、(對甲苯基)(對異丙基苯 基)銷六氟磷酸鹽、甲基萘基錤六氟磷酸鹽、乙基萘基二六 氟磷酸鹽、三笨基毓六氟磷酸鹽、參(對甲苯基)銃六氟磷 酸鹽、參(對異丙基苯基)毓六氟磷酸鹽、參(2,6_二甲基苯 ❿基)毓六氟磷酸鹽、參(對第三丁基苯基)毓六氟磷酸鹽t參 (對氰基苯基)銃六氟磷酸鹽、參(對氣苯基)銃六氟磷酸 鹽、二甲基萘基毓六氟磷酸鹽、二乙基萘基鏑六氟磷酸鹽、 .二甲基(甲氧基)毓六氟磷酸鹽、二甲基(乙氧基)毓六氟磷 酸鹽、二甲基(丙氧基)毓六氟碌酸鹽、二甲基(丁氧基)鏡 六氟填酸鹽、二甲基(辛氧基)锍六氟構酸鹽、二甲基(十八 烷氧基)毓六氟磷酸鹽、二甲基(異丙氧基)毓六氟磷酸鹽、 二甲基(第三T氧基)毓六氟磷酸鹽、二甲基(環戊氧基;)銃 六氟磷酸鹽、二甲基(環己氧基)硫六氟磷酸鹽、二甲基(氟 22 317489 1377440 —甲氧基)锍六氟磷酸鹽、二甲基(2-氯乙氧基)毓六氟磷酸 鹽、二甲基(3-溴丙氧基)毓六氟磷酸鹽、二曱基(4_氰基丁 ’氧基)蔬六氟磷酸鹽、二甲基(8-硝基辛氧基)毓六氟磷酸 鹽、二曱基(18-三氟甲基十八烷氧基)锍六氟磷酸鹽'二甲 基(2-經異丙氧基)毓六氟磷酸鹽、二曱基(參(三氣甲基) 甲基)疏六氟磷酸鹽、二苯基錤六氟砷酸鹽、雙(對甲苯基) 錤六氟砷酸鹽、雙(對第三丁基苯基)錤六氟砷酸鹽、雙(對 魯辛基苯基)錤六氟砷酸鹽、雙(對十八烷基苯基)錤六氟砷酸 鹽、雙(對辛氧基笨基)錤六氟砷酸鹽、雙(對十八烷氧基苯 基)鎭六氟砷酸鹽、苯基(對十八烷氧基苯基)鍈六氟砷酸 鹽、(對甲苯基)(對異丙基苯基)錤六氟砷酸鹽、甲基萘基 錤六氟砷酸鹽、乙基萘基錤六氟砷酸鹽、三苯基锍六氟砷 酸鹽、參(對曱苯基)锍六氟砷酸鹽、參(對異丙基苯基)毓 六氟坤酸鹽、參(2, 6-二甲基苯基)锍六氟砷酸鹽、參(對第 三丁基苯基)毓六氟砷酸鹽、參(對氰基苯基)毓六氟砷酸 •鹽、參(對氯苯基)毓六氟砷酸鹽、二甲基萘基毓六氟砷酸 鹽、二乙基萘基锍六氟砷酸鹽、二曱基(曱氧基)毓六氟砷 酸鹽、二曱基(乙氧基)锍六氟砷酸鹽、二曱基(丙氧基)毓 -六敗砷酸鹽、二甲基(丁氧基)锍六氟砷酸鹽、二曱基(辛氧 基)锍六氟砷酸鹽、二甲基(十八烷氧基)毓六氟砷酸鹽、二 甲基(異丙氧基)鏑六氟砷酸鹽、二曱基第三丁氧基毓六氟 坤酸鹽、二曱基環戊氧基毓六氟砷酸鹽、二曱基(環己氧基) 硫六氣砷酸鹽、二曱基(氟曱氧基)锍六氟砷酸鹽、二曱基 (2一氣乙氧基)锍六氟砷酸鹽、二曱基(3-溴丙氧基)毓六氟 23 317489 1377440 砷酸鹽、二曱基(4-氰基丁氧基)銃六氟砷酸鹽、二曱基(8-’硝基辛氧基)毓六氟砷酸鹽、二甲基(18_三氟曱基十八烷氧 -基)毓六氟砷酸鹽、二曱基(2-羥異丙氧基)鏑六氟砷酸鹽、 二曱基(參(三氣曱基)甲基)锍六氟砷酸鹽、二苯基錤六氟 銻酸鹽、雙(對甲苯基)錤六氟銻酸鹽、雙(對第三丁基苯基) 錤六氟銻酸鹽、雙(對-辛基苯基)錤六氟銻酸鹽、雙(對十 八烷基苯基)錤六氟銻酸鹽、雙(對辛氧基苯基)錤六氟銻酸 鹽、雙(對十八烷氧基苯基)錤六氟銻酸鹽、苯基(對十八烷 *氧基苯基)錤六氟銻酸鹽、(對曱苯基)(對異丙基苯基)錤六 銻酸鹽、甲基萘基錤六氟銻酸鹽、乙基萘基錤六氟銻酸鹽、 三苯基锍六氟銻酸鹽、參(對曱苯基)毓六氟銻酸鹽、參(對 異丙基苯基)毓六氟銻酸鹽、參(2, 6-二曱基苯基)锍六氟銻 酸鹽、參(對第三丁基笨基)锍六氟銻酸鹽、參(對氰基苯基) 锍六氟銻酸鹽、參(對氣苯基)毓六氟銻酸鹽、二甲基萘基 锍六氟銻酸鹽、二乙基萘基毓六氟銻酸鹽、二甲基(甲氧基) 籲锍六氟銻酸鹽、二曱基(乙氧基)锍六氟銻酸鹽、二甲基(丙 氧基)毓六氟銻酸鹽、二曱基(丁氧基)毓六氟銻酸鹽、二曱 基(辛氧基)毓六氟銻酸鹽、二甲基(十八烷氧基)毓六氟銻 酸鹽、二曱基(異丙氧基)锍六氟銻酸鹽、二曱基(第三丁氧 基)毓六氟銻酸鹽、二甲基(環戊氧基)毓六氟銻酸鹽、二曱 基(環己氧基)锍六氟銻酸鹽、二曱基(氟甲氧基)锍六氟銻 酸鹽、二曱基(2-氣乙氧基)毓六氟銻酸鹽、二甲基(3-溴丙 氧基)毓六氟銻酸鹽、二曱基(4-氰基丁氧基)毓六氟銻酸 鹽、二曱基(8-硝基辛氧基)毓六氟銻酸鹽、二甲基(18-三 24 317489 1377440 ,氟曱基十八烷氧基)锍六氟銻酸鹽、二曱基(2-羥基異丙氧 基)毓1氟銻酸鹽、二曱基(參(三氯曱基)甲基)毓六氟銻酸 .鹽、二苯基鏘肆(五氟笨基)硼酸鹽、雙(對甲苯基)錤肆(五 氟苯基)硼酸鹽、雙(對第三丁基苯基)錤肆(五氟苯基)硼酸 鹽、雙(對辛基苯基)錤肆(五氟苯基)硼酸鹽、雙(對十八烷 基苯基)鎖肆(五氟苯基)硼酸鹽、雙(對辛氧基苯基)鐫肆 (五氟苯基)硼酸鹽、雙(對十八烷氧基笨基)鐫肆(五氟苯基) 籲硼酸鹽、苯基(對十八烷氧基苯基)鐄肆(五氟苯基)硼酸 鹽、(對甲笨基)(對異丙基苯基)錤肆(五氟苯基)硼酸鹽、 甲基萘基鏘肆(五氟苯基)硼酸鹽、乙基萘基鎭肆(五氟苯基) 爛酸鹽、二本基毓肆(五氟苯基)硼酸鹽、參(對甲苯基)毓 肆(五氟苯基)硼酸鹽、參(對異丙基苯基)銃肆(五氟苯基) 硼酸鹽、參(2, 6-二甲基苯基)毓肆(五氟苯基)硼酸鹽、參 (對第三丁基苯基)毓肆(五氟苯基)硼酸鹽、參(對氰基苯基) 毓肆(五氟苯基)硼酸鹽、參(對氯苯基)毓肆(五氟苯基)硼 鬱酸鹽、二甲基萘基毓肆(五氟苯基)硼酸鹽、二乙基萘基蔬 肆(五氟苯基)硼酸鹽、二甲基(甲氧基)毓肆(五氟苯基)硼 酸鹽、二甲基(乙氧基)毓肆(五氟苯基)侧酸鹽、二甲基(丙 氧基)毓肆(五氟苯基)硼酸鹽、二曱基(丁氧基)毓肆(五氟 笨基)硼酸鹽、二甲基(辛氧基)锍肆(五氟苯基)硼酸鹽、二 甲基(十八烧氧基)蔬肆(五氟苯基)硼酸鹽、二甲基(異丙氧 基)銃肆(五氟苯基)硼酸鹽、二甲基(第三丁氧基)蔬肆(五 氟苯基)硼酸鹽、二曱基(環戊氧基)毓肆(五氟苯基)硼酸 鹽、二甲基(環己氧基)毓肆(五氟苯基)硼酸鹽、二甲基(氟 317489 25 1377440 曱氧基)毓肆(五氟苯基)棚酸鹽、二甲基(2-氯乙氧基)毓肆 (五氟苯基)硼睃鹽、二曱基(3-溴丙氧基)锍肆(五氟苯基) •硼酸鹽、二曱基(4-氰基丁氧基)锍肆(五氟苯基)硼酸鹽、 二曱基(8-硝基辛氧基)毓肆(五氟苯基)硼酸鹽、二曱基 (18-三氟曱基十八烷氧基)毓肆(五氟苯基)硼酸鹽、二甲基 (2-經基異丙氧基)蔬肆(五氟苯基)棚酸鹽、二曱基(參(三 氣曱基)曱基)锍肆(五氟苯基)硼酸鹽等。 其中,以使用雙(對甲苯基)錤六氟磷酸鹽、(對曱苯基) *(對異丙基苯基)錤六氟磷酸鹽、雙(對第三丁基苯基)錤六 氟磷酸鹽、三笨基毓六氟磷酸鹽、參(對第三丁基苯基)毓 六氟磷酸鹽、雙(對曱苯基)錤六氟砷酸鹽、(對曱苯基)(對 異丙基苯基)鎖六氟砷酸鹽、雙(對第三丁基苯基)錤六氟砷 酸鹽、三苯基銃六氟砷酸鹽、參(對第三丁基苯基)毓六氟 砷酸鹽、雙(對曱苯基)錤六氟銻酸鹽、(對曱苯基)(對異丙 基苯基)錤六氟銻酸鹽、雙(對第三丁基苯基)錤六氟銻酸 _鹽、三苯基锍六氟銻酸鹽、參(對第三丁基苯基)毓六氟銻 酸鹽、雙(對曱苯基)鎖肆(五氟苯基)硼酸鹽、(對曱苯基) (對異丙基苯基)錤肆(五氟苯基)硼酸鹽、雙(對第三丁基苯 基)錤肆(五氟笨基)棚酸鹽、三苯基锍肆(五氟苯基)硼酸 鹽、參(對第三丁基笨基)毓肆(五氟苯基)硼酸鹽較佳,以 使用雙(對曱苯基)錤六氟銻酸鹽、(對甲苯基)(對異丙基苯 基)錤六氟銻酸鹽、雙(對第三丁基苯基)錤六氟銻酸鹽、三 苯基毓六氟銻酸鹽、參(對第三丁基苯基)锍六氟銻酸鹽、 雙(對曱苯基)錤肆(五氟苯基)硼酸鹽、(對曱苯基)(對異丙 26 317489 1377440 .基苯基)錤肆(五氟苯基)硼酸鹽、雙(對第三丁基苯基)鐄肆 (五氟苯基)硼酸鹽、三苯基毓肆(五氟苯基)硼酸鹽、參(對 第二丁基苯基)蔬肆(五氟苯基)硼酸鹽更佳。 在使用聚合起始劑(F)之時,其含量相對於放射線敏感 性樹脂組成物之固形分的質量分率,以〇. 〇1至1〇質量% 較佳,而以0.1至5質量%更佳,聚合起始劑(F)之含量i 在上述範圍内時,因熱硬化時之硬化速度高,所以在熱硬 φ化時可以抑制解析度之低下,更有提高硬化膜之耐溶劑性 的傾向,因而為佳。 - 上述多元酴化合物(G),可列舉如分子中有2個以上之 酚性氫氧基之化合物。上述多元酚化合物(G)之例可列舉如 與醌重氮化合物所記述者同樣之三羥基二苯曱酮類、四羥 基二苯甲酮類、五羥基二苯甲酮類、六羥基二苯甲酮類、(多 經基本基)烧類等多元紛化合物類。 又’别述多元齡化合物(G)’例如,至少以經基苯乙稀 _作為原料單體之聚合物。具體之例可列舉如:聚經基苯乙 歸、經基苯乙烯/甲基丙烯酸甲酯共聚物、羥基苯乙烯/ 甲基丙烯酸環己酯共聚物、羥基苯乙烯/苯乙烯共聚物、 羥基笨乙烯/烷氧基笨乙烯共聚物等聚合羥基苯乙烯之樹 脂。 再者’上述多元酚化合物(G)之例可列舉如,由由酚 類、甲酚類及鄒苯二酚類所組成組群中選出丨種以上之化 合物’與由酸類及酮類所組成組群中選出1種以上化合 物’經聚縮合所得之酚醛清漆樹脂等。 317489 27 1^//440 *使用上述多元酚化合物((〇時,其含量,相對於 破感性樹脂組成物固形分的質量分率,以〇 〇 i至 旦 為佳,而以〇l$〇c;暂旦0/由 、里/ 當多㈣化合物⑻之含 里在上述摩巳圍内時,因解析度提高,可見光穿透率有下降 之傾向,因而為佳。 ,下降 上述交聯劑(H)之例可列舉如:經甲基化合物等。 上述之釘基化合物之例可列舉如:絲基甲一 月^胺樹脂、絲基甲基化尿素樹脂料氧基甲純⑽ - 在此,做為燒氧基T基化三聚氰胺樹脂者,可列舉如. :氧=化三聚氮胺樹脂、乙氧基甲基化三聚氛胺:. 氧土甲基化二聚氰胺樹脂、丁氧基甲基化三聚氛胺 樹脂等,做為烧氧基甲基化尿素樹脂者,可列舉如、甲氧 基甲基化尿素樹脂、乙氧基甲基化尿素樹脂、丙氧基甲美 ·=:用丁氧基甲基化尿素樹脂等。上述之交_ _刀別早獨使用,亦可使用2種以上之組合。 使用交聯劑⑻時’其含量相對於放射線敏感性樹脂組 成物固,分的質量分率,以〇.〇1至15質量%為佳,當交聯 劑之含!在上述範圍内時’由於所得之膜的可見光穿透率 增多,硬化樹脂圖案之性能提高,因而為佳。 上述聚合性單體⑴之例可列舉如:藉由加熱使自由基 ^而得之聚合性單體、陽離子聚合而得之聚合性單體 寻’但較佳的是使用由陽離子聚合所得之聚合性單體。 上述之自由基聚合得到之聚合性單體,列舉如:聚合 317489 28 1377440 •性碳-碳不飽和鍵之化合物,亦可為單功能之聚合性單體, 以及2功能之聚合性單體或是3功能以上之聚合性單體 • 等、亦可為多功能之聚合性單體。 具單官能基之聚合性單體之例可列舉如:壬基苯基卡 必醇丙烯酸酯、壬基苯基卡必醇曱基丙烯酸酯、丙烯酸2_ 羥基-3-苯氧基丙酯、曱基丙烯酸2 —羥基_3_苯氧基丙酯、 2-乙基己基卡必醇丙烯酸酯、2-乙基己基卡必醇甲基丙烯 籲S文S曰、2-羥基乙基丙烯酸酯、2-羥基乙基甲基丙烯酸酯、 N-乙烯基D比咯烷酮等。 具2官能基之聚合性單體可列舉如:16_己二醇二丙 烯酸酯、1,6-己二醇二甲基丙烯酸酯、乙二醇二丙烯酸酯、 乙一醇二甲基丙烯酸酯、新戊二醇二丙烯酸酯、新戊二醇 二曱基丙烯酸酯、三乙二醇二丙烯酸酯、三乙二醇二甲基 丙烯酸酯、雙酚A之雙(丙烯醯氧基乙基)醚、3-甲基戊二 醇二丙烯酸酯、3-甲基戊二醇二甲基丙烯酸酯等。 _ 又,具3官能基之聚合性單體可列舉如:三羥甲基丙 烷二丙烯酸酯、三羥甲基丙烷三甲基丙烯酸酯、季戊四醇 一丙稀S文醋、季戊四醇三甲基丙稀酸酯、季戊四醇四丙稀 S夂g日、季戊四醇四甲基丙烯酸酯、季戊四醇五丙烯酸酯' 季戊四醇五甲基丙稀酸酯、二季戊四醇六丙烯酸酯、二季 戊四醇六甲基丙稀酸酯等。 在上述聚合性單體中,以使用具2官能基或具3官能 基、上之^&性單體為宜’具體上以使用季戊四醇四丙烯 酸醋、二季戊四醇六丙烯酸酯為佳,以使用二季戊四醇六 29 317489 1377440 丙烯酸酯更佳。又’亦可使用具2官能基或3 多官能基之聚合性單體盥且單—’ 匕土或更 人。 具早s能基之聚合性單體之組 σ ° 陽離子聚合而得之聚合性單體者,可列舉如: 喊基、丙稀基驗基、環氧基、氧雜環丁 知基 合性功能基之聚合性單體。” 、土 3 %離子聚 含有乙埽基趟基之化合物,可列舉如:三乙 =基鱗、U-環己燒二甲醇二乙稀基: 基驗、十二絲乙烯基⑽等。 絲丁基乙細 含有丙烯基醚基之仆人私^ / t 氣基:基):1:wm—丙稀 3有玉衣乳基之化合物之例可列與心·德^、 脂、酚醛清漆型環氧榭# ^ 牛·又酚A型環氧樹 脂肪族環氧樹甲_清漆型環氧樹脂、環狀 環氧樹脂、雜環式環氧樹脂等。樹曰縮水甘油胺型 ’基氧基之化合物之例可列舉如:雙[3-(3‘乙 p氧基V 4 、U,〔3-(3-乙基氧雜環丁基) 基苯、i 4—雔〔’3 (3〔3一(3_乙基氧雜環丁基)甲氧基〕甲 1 4錐「又(乙基氧雜環丁基)甲氧基〕環己烷、 ’ 4雙〔3-(3-乙基氧雜環 其、 衣丁幻甲軋基〕甲基環己烷, 乙基乳雜核丁基)甲基化酚醛清漆樹脂等。 單獨使體⑴時’聚合性單體⑴可分別 量,於放射線敏感性 317489 30 1377440 通常為0. 1至20質量%。 上述之矽烷偶合劑(J),可列舉如:甲基三 .烧、甲基三乙A基錢、乙烯基三氣料、乙稀基三土甲氧 基石夕烧、乙烯基三乙氧基石夕烧、乙婦基三乙酿氧基石夕院、 乙稀基參(2-甲氧基乙氧基)石夕垸、3_氯丙基_三甲氧基石夕 烷、3-氣丙基f基-二氣矽烷、3_氣丙基甲基—二甲氧基矽 烧、3-氯丙基甲基-二乙氧基石夕院、3_環氧丙氧基丙基-三 籲甲氧基矽烷、3-環氧丙氧基丙基_三乙氧基矽烷、3_環氧丙 -氧基丙基甲基-二f氧基矽烷、3_巯基丙基—三甲氧基矽 烷、3-甲基丙烯醯氧基丙基一三甲氧基矽烷、3曱基丙烯醯 氧基丙基曱基-二甲氧基矽烷、2—(3 4_環氧環己基)乙基_ 三甲氧基矽烷、N-2-(N-乙烯基苯甲基胺基乙基)_3_胺基丙 基-三甲氧基矽烷鹽酸鹽、六甲基二矽烷基胺、二胺基矽 烷、二胺基丙基-三曱氧基矽烷、3_胺基丙基_三曱氧基矽 烷、3-胺基丙基-三乙氧基矽烷、3_胺基丙基曱基_二乙氧 φ基矽烷、3-胺基丙基-參(2-甲氧基乙氧基乙氧基)矽烷、 3-(2-胺基乙基)-3-胺基丙基-三甲氧基矽烷、3_(2_胺基乙 基)-3-胺基丙基曱基-二甲氧基矽烷、3_脲基丙基_三甲氧 •基矽烷、3_脲基丙基-三乙氧基矽烷、N-胺基乙基-3-胺基 丙基-三曱氧基矽烷、N-胺基乙基-3-胺基丙基甲基_二甲氧 基矽烷、N-曱基-3-胺基丙基-三曱氧基矽烷、N-苯基_3一 胺基丙基-三甲氧基矽烷等。 其中’宜使用於此結構中含有環氧基之矽烧偶合劑。 上述之此結構中含有環氧基之矽烷偶合劑’其例可列 317489 1377440 •舉如.3-¾氧丙氧基丙基_三甲氧基矽烷、3_環氧丙氧基丙 基一二乙氧基矽烷、3-環氧丙氧基丙基甲基-二甲氧基矽 •燒、2-(3, 4-環氧環己基)乙基-三甲氧基矽烷等,宜使用 2 (3,4-環氧環己基)乙基_三曱氧基矽烷等含脂環式環氧 基之碎院偶合劑。 矽烷偶合劑(J)之含量,相對於放射線敏感性樹脂組成 物固形分的質量分率,以0.01至10質量%為佳,以O.i , 魯至2質K較佳,又以0.2至1質量%為更佳。石夕烧偶合劑 一之含里在上述範圍内時,在使用本發明之放射線敏感性樹 脂組成物形成硬化樹脂圖案時,因該硬化樹脂圖案的可見 光穿透率提高,所以透明性有提高傾向,此外,因該硬化 樹脂圖案與基材間之密著性提高,因而為佳。 人本發明之放射線敏感性樹脂組成物,因應需求,亦可 含有其他成分,例如抗氧化劑、溶解抑制劑、增感劑、紫 外線吸收劑、光安定劑、接著性改良劑、電子供與體等各 _種之添加物。 本發明之放射線敏感性樹脂組成物’例如, 於溶劑(C)之溶液、醌It is preferred that ruthenium, ruthenium ruthenium, ginseng (p-butylphenyl) ruthenium, and the like Specific examples of the above-mentioned anion derived from the hexamic acid include, for example, a 2-acid salt, a hexa-gas sulphate, a hexa-halo citrate, a lanthanum (penta-phenylene) ruthenium-ruthenium, preferably a hexafluorocarbon. Citrate, bismuth (pentafluorophenyl) borate. The above-mentioned mis-cations are also derived from combinations. The anion of Lewis acid is optional, and specific examples of the photocationic polymerization initiator (F) include, for example, two stupid #鐄 hexafluorophosphate, bis(p-phenyl) hexafluorophosphate, and double ( Pentium hexafluorophosphate, bis(p-octyl) hexafluorophosphate: bis(p-octadecylphenyl)-locked hexafluorophosphate, bis(p-octyloxy)錤: fluorophosphate, bis(p-octadecyloxyphenyl)phosphonium hexafluorophosphate, & s-(p-octadecyloxyphenyl)phosphonium hexafluorophosphate, (p-tolyl) ( P-isopropylphenyl) pin hexafluorophosphate, methylnaphthylphosphonium hexafluorophosphate, ethylnaphthyl dihexafluorophosphate, trisuccinyl hexafluorophosphate, ginseng (p-tolyl) fluorene Fluorophosphate, ginseng (p-isopropylphenyl) sulfonium hexafluorophosphate, ginseng (2,6-dimethylphenylhydrazino) hexafluorophosphate, ginseng (p-tert-butylphenyl) fluorene Fluorophosphate t cis (p-cyanophenyl) sulfonium hexafluorophosphate, ginseng (p-phenyl) hexafluorophosphate, dimethylnaphthyl quinone hexafluorophosphate, diethyl naphthyl fluorene hexafluorophosphate Phosphate, .dimethyl (A) Hexafluorophosphate, dimethyl(ethoxy)phosphonium hexafluorophosphate, dimethyl(propoxy)phosphonium hexafluoroantimonate, dimethyl(butoxy) mirror hexafluoro-acid Salt, dimethyl(octyloxy)phosphonium hexafluoroate, dimethyl(octadecyloxy)phosphonium hexafluorophosphate, dimethyl(isopropoxy)phosphonium hexafluorophosphate, dimethyl (third T oxy) sulfonium hexafluorophosphate, dimethyl (cyclopentyloxy) ruthenium hexafluorophosphate, dimethyl (cyclohexyloxy) sulphur hexafluorophosphate, dimethyl (fluorine 22 317489 1377440 —Methoxy)phosphonium hexafluorophosphate, dimethyl(2-chloroethoxy)phosphonium hexafluorophosphate, dimethyl(3-bromopropoxy)phosphonium hexafluorophosphate, diterpenes (4-cyanobutyryloxy) hexafluorophosphate, dimethyl(8-nitrooctyloxy)phosphonium hexafluorophosphate, dimercapto (18-trifluoromethyloctadecyloxy)锍 hexafluorophosphate 'dimethyl (2-isopropoxy) sulfonium hexafluorophosphate, dimercapto (paraxyl (trimethyl) methyl) hexafluorophosphate, diphenyl sulfonium Fluor arsenate, bis(p-tolyl) ruthenium hexafluoroarsenate, double Tert-butylphenyl)phosphonium hexafluoroarsenate, bis(p-octylphenyl)phosphonium hexafluoroarsenate, bis(p-octadecylphenyl)phosphonium hexafluoroarsenate, double (pair) Octyloxy arsenate, bis(p-octadecyloxyphenyl)phosphonium hexafluoroarsenate, phenyl (p-octadecyloxyphenyl)phosphonium hexafluoroarsenate, (p-tolyl)(p-isopropylphenyl)phosphonium hexafluoroarsenate, methylnaphthylphosphonium hexafluoroarsenate, ethylnaphthylphosphonium hexafluoroarsenate, triphenylsulfonium hexafluoroarsenate Salt, ginseng (p-phenyl) hexafluoroarsenate, ginseng (p-isopropylphenyl) hexafluoroundonate, ginseng (2,6-dimethylphenyl)phosphonium hexafluoroarsenate , ginseng (p-butylphenyl) hexafluoroarsenate, ginseng (p-cyanophenyl) sulfonium hexafluoroarsenate, ginseng (p-chlorophenyl) hexafluoroarsenate, dimethyl Naphthyl hydrazine hexafluoroarsenate, diethyl naphthyl hydrazine hexafluoroarsenate, dinonyl (decyloxy) ruthenium hexafluoroarsenate, dimercapto (ethoxy) ruthenium hexafluoroarsenate Salt, dimercapto (propoxy) fluorene-hexa-sodium arsenate, dimethyl(butoxy)phosphonium hexafluoroarsenic Salt, dimercapto (octyloxy)phosphonium hexafluoroarsenate, dimethyl(octadecyloxy)phosphonium hexafluoroarsenate, dimethyl(isopropoxy)phosphonium hexafluoroarsenate, Dimercapto-tert-butoxy hexafluoro-octaate, di-n-cyclopentyloxy hexafluoroarsenate, di-decyl (cyclohexyloxy) sulphide arsenate, di- fluorenyl (fluoride)曱oxy)phosphonium hexafluoroarsenate, dimercapto (2-glycoloxy)phosphonium hexafluoroarsenate, dimercapto (3-bromopropoxy)phosphonium hexafluoride 23 317489 1377440 arsenate, two Mercapto(4-cyanobutoxy)phosphonium hexafluoroarsenate, dimercapto (8-'nitrooctyloxy)phosphonium hexafluoroarsenate, dimethyl (18-trifluorodecyl) Alkoxy-yl)phosphonium hexafluoroarsenate, dinonyl (2-hydroxyisopropoxy)phosphonium hexafluoroarsenate, dimercapto (xhenyltrimethyl)methyl)phosphonium hexafluoroarsenate Salt, diphenylphosphonium hexafluoroantimonate, bis(p-tolyl)phosphonium hexafluoroantimonate, bis(p-tert-butylphenyl)phosphonium hexafluoroantimonate, bis(p-octylphenyl) Hexafluoroantimonate, bis(p-octadecylphenyl)phosphonium hexafluoroantimonate, bis(p-octyloxyphenyl) Hexafluoroantimonate, bis(p-octadecyloxyphenyl)phosphonium hexafluoroantimonate, phenyl (p-octadecano-oxyphenyl)phosphonium hexafluoroantimonate, (p-phenylene) (p-isopropylphenyl) decyl citrate, methylnaphthyl hydrazine hexafluoroantimonate, ethyl naphthyl fluorene hexafluoroantimonate, triphenyl sulfonium hexafluoroantimonate, ginseng Phenylphenyl)phosphonium hexafluoroantimonate, ginseng (p-isopropylphenyl)phosphonium hexafluoroantimonate, ginseng (2,6-dimercaptophenyl)phosphonium hexafluoroantimonate, ginseng Tributyl phenyl) hexafluoroantimonate, ginseng (p-cyanophenyl) hexafluoroantimonate, ginseng (p-phenyl) hexafluoroantimonate, dimethylnaphthyl fluorene hexafluorophosphate Citrate, diethylnaphthylfluorene hexafluoroantimonate, dimethyl (methoxy) hexafluoroantimonate, dimercapto (ethoxy) hexafluoroantimonate, dimethyl (propoxy)phosphonium hexafluoroantimonate, dimercapto(butoxy)phosphonium hexafluoroantimonate, dinonyl (octyloxy)phosphonium hexafluoroantimonate, dimethyl (octadecyloxy) Hexafluoroantimonate, dinonyl (isopropoxy) hexafluoroantimonate, dimercapto (third Oxy)phosphonium hexafluoroantimonate, dimethyl(cyclopentyloxy)phosphonium hexafluoroantimonate, dinonyl (cyclohexyloxy)phosphonium hexafluoroantimonate, dimercapto (fluoromethoxy)锍 hexafluoroantimonate, dimercapto (2- ethoxy) hexafluoroantimonate, dimethyl (3-bromopropoxy) hexafluoroantimonate, dimercapto (4- Cyanobutoxy)phosphonium hexafluoroantimonate, dimercapto (8-nitrooctyloxy)phosphonium hexafluoroantimonate, dimethyl (18-35 317489 1377440, fluorodecyl octadecyloxy)锍 锍 hexafluoroantimonate, dimercapto (2-hydroxyisopropoxy) hydrazine 1 fluoro citrate, dimercapto ( ginseng (trichloromethyl) methyl) hexafluoroantimonic acid salt, Diphenylphosphonium (pentafluorophenyl)borate, bis(p-tolyl)phosphonium (pentafluorophenyl)borate, bis(p-tert-butylphenyl)phosphonium (pentafluorophenyl)borate Salt, bis(p-octylphenyl)phosphonium (pentafluorophenyl)borate, bis(p-octadecylphenyl)-locked quinone (pentafluorophenyl)borate, bis(p-octyloxyphenyl) ) quinone (pentafluorophenyl) borate, bis (p-octadecyloxy) hydrazine (five Phenyl) borate, phenyl (p-octadecyloxyphenyl) ruthenium (pentafluorophenyl) borate, (p-methylphenyl) (p-isopropylphenyl) ruthenium (pentafluorobenzene) Borate, methylnaphthyl quinone (pentafluorophenyl) borate, ethylnaphthyl hydrazine (pentafluorophenyl) rotate, dibenyl quinone (pentafluorophenyl) borate, Paraxyl (p-tolyl) ruthenium (pentafluorophenyl) borate, ginseng (p-isopropylphenyl) ruthenium (pentafluorophenyl) borate, ginseng (2, 6-dimethylphenyl) hydrazine肆(pentafluorophenyl)borate, ginseng (p-butylphenyl) ruthenium (pentafluorophenyl) borate, ginseng (p-cyanophenyl) ruthenium (pentafluorophenyl) borate, Para-(p-chlorophenyl)phosphonium (pentafluorophenyl)borate, dimethylnaphthyl quinone (pentafluorophenyl) borate, diethylnaphthyl quinone (pentafluorophenyl) boric acid Salt, dimethyl (methoxy) hydrazine (pentafluorophenyl) borate, dimethyl (ethoxy) hydrazine (pentafluorophenyl) side acid salt, dimethyl (propoxy) hydrazine Bis(pentafluorophenyl)borate, dinonyl (butoxy)毓肆(pentafluorophenyl)borate, dimethyl(octyloxy)phosphonium (pentafluorophenyl)borate, dimethyl(octadecyloxy) phytonate (pentafluorophenyl)boronic acid Salt, dimethyl(isopropoxy)phosphonium (pentafluorophenyl)borate, dimethyl (t-butoxy) quinone (pentafluorophenyl) borate, dimercapto (cyclopentyloxy) Ethyl (pentafluorophenyl) borate, dimethyl (cyclohexyloxy) ruthenium (pentafluorophenyl) borate, dimethyl (fluorine 317489 25 1377440 decyloxy) ruthenium (pentafluoro Phenyl) shed acid salt, dimethyl (2-chloroethoxy) ruthenium (pentafluorophenyl) boron sulfonium salt, dimercapto (3-bromopropoxy) ruthenium (pentafluorophenyl) • Borate, dimercapto (4-cyanobutoxy) ruthenium (pentafluorophenyl) borate, dimercapto (8-nitrooctyloxy) ruthenium (pentafluorophenyl) borate, two Mercapto (18-trifluorodecyl octadecyloxy) ruthenium (pentafluorophenyl) borate, dimethyl (2-perisopropoxy) vegetable (pentafluorophenyl) succinate Diterpenoid (parade (trimethane) fluorenyl) quinone (pentafluorophenyl) boric acid Salt and so on. Among them, bis(p-tolyl)phosphonium hexafluorophosphate, (p-phenylene)*(p-isopropylphenyl)phosphonium hexafluorophosphate, bis(p-tert-butylphenyl)phosphonium hexafluorophosphate Phosphate, trisyl sulfonium hexafluorophosphate, ginseng (p-tert-butylphenyl) sulfonium hexafluorophosphate, bis(p-phenylphenyl)phosphonium hexafluoroarsenate, (p-phenylene) (pair) Isopropyl phenyl) hexafluoroarsenate, bis(p-butylphenyl)phosphonium hexafluoroarsenate, triphenylsulfonium hexafluoroarsenate, ginseng (p-tert-butylphenyl) Hexafluoroarsenate, bis(p-phenylene)phosphonium hexafluoroantimonate, (p-phenylene) (p-isopropylphenyl)phosphonium hexafluoroantimonate, bis (p-tert-butylbenzene)錤 錤 hexafluoroantimonate _ salt, triphenyl sulfonium hexafluoroantimonate, ginseng (p-tert-butylphenyl) hexafluoroantimonate, bis(p-phenylene) hydrazine (pentafluorobenzene) Borate, (p-phenylene) (p-isopropylphenyl) ruthenium (pentafluorophenyl) borate, bis(p-tert-butylphenyl) ruthenium (pentafluorophenyl) succinic acid Salt, triphenylsulfonium (pentafluorophenyl) borate, ginseng (for the third Butyl phenyl) quinone (pentafluorophenyl) borate is preferably used to use bis(p-phenylphenyl)phosphonium hexafluoroantimonate, (p-tolyl) (p-isopropylphenyl) fluorene hexafluorophosphate Citrate, bis(p-butylphenyl)phosphonium hexafluoroantimonate, triphenylsulfonium hexafluoroantimonate, bis(p-butylphenyl)phosphonium hexafluoroantimonate, double P-phenylphenyl)phosphonium (pentafluorophenyl)borate, (p-phenylene) (p-isopropyl 26 317489 1377440. phenyl) quinone (pentafluorophenyl) borate, double (for third Butyl phenyl) quinone (pentafluorophenyl) borate, triphenyl sulfonium (pentafluorophenyl) borate, ginseng (p-butyl phenyl) vegetable quinone (pentafluorophenyl) borate Better. When the polymerization initiator (F) is used, the content thereof is preferably 〇1 to 1% by mass, and 0.1 to 5% by mass, based on the mass fraction of the solid content of the radiation-sensitive resin composition. More preferably, when the content i of the polymerization initiator (F) is in the above range, the curing rate at the time of thermal curing is high, so that the resolution of the cured film can be suppressed and the solvent resistance of the cured film can be improved. Sexual tendencies are therefore preferred. The above polyvalent fluorene compound (G) may, for example, be a compound having two or more phenolic hydroxyl groups in the molecule. Examples of the polyhydric phenol compound (G) include trihydroxy dibenzophenones, tetrahydroxybenzophenones, pentahydroxybenzophenones, and hexahydroxydiphenyl which are the same as those described for the diazonium compound. A variety of compounds such as ketones and (basic bases). Further, the multi-aged compound (G)' is, for example, a polymer having at least a base styrene-based monomer. Specific examples thereof include: polypyridylbenzene, transphenylene/methyl methacrylate copolymer, hydroxystyrene/cyclohexyl methacrylate copolymer, hydroxystyrene/styrene copolymer, and hydroxyl group. A resin of a polymerized hydroxystyrene such as a stupid ethylene/alkoxy stupid ethylene copolymer. Further, examples of the above polyhydric phenol compound (G) include, for example, a compound selected from the group consisting of phenols, cresols, and coodiols, and consisting of acids and ketones. A novolak resin obtained by polycondensation of one or more kinds of compounds is selected from the group. 317489 27 1^//440 * Use the above polyhydric phenol compound ((〇, its content, relative to the mass fraction of the solid content of the destructive resin composition, preferably 〇〇i to denim, and 〇l$〇 c; temporary denier 0 / 、, 里 / When the (4) compound (8) is contained in the above-mentioned ruthenium, the resolution of the visible light increases, and the visible light transmittance tends to decrease, so it is preferable to lower the above-mentioned crosslinking agent. Examples of the (H) include, for example, a methyl compound, etc. Examples of the above-mentioned nail-based compound include, for example, a silk-based methylamine-amine resin, and a silk-based methylated urea resin oxymethyl pure (10) - Therefore, as the alkoxylated T-based melamine resin, there may be mentioned, for example, an oxygen=chemical triazide resin, an ethoxymethylated trimeric amine: an oxomethylated melamine resin , a butoxymethylated trimeric amine resin, etc., as an alkoxymethylated urea resin, for example, methoxymethylated urea resin, ethoxymethylated urea resin, propoxy甲甲美·=: Use a butoxymethylated urea resin, etc. The above-mentioned _ _ knife may be used alone or in combination of two or more. When the crosslinking agent (8) is used, the content thereof is relative to the mass fraction of the radiation-sensitive resin composition, preferably from 1 to 15% by mass, and when the crosslinking agent is contained within the above range. Since the visible light transmittance of the obtained film is increased and the performance of the cured resin pattern is improved, it is preferable. Examples of the polymerizable monomer (1) include a polymerizable monomer and a cation obtained by heating a radical. The polymerizable monomer obtained by polymerization is preferably used, but it is preferred to use a polymerizable monomer obtained by cationic polymerization. The above-mentioned radically polymerizable monomer can be exemplified by polymerization: 317489 28 1377440 • Carbon-carbon The compound having an unsaturated bond may be a monofunctional polymerizable monomer, a 2-functional polymerizable monomer or a polymerizable monomer having 3 or more functions, or a multifunctional polymerizable monomer. Examples of the monofunctional polymerizable monomer include mercaptophenyl carbitol acrylate, mercaptophenyl carbitol acrylate, 2-hydroxy-3-phenoxypropyl acrylate, and mercapto group. 2-hydroxy-3-phenylphenoxypropyl acrylate, 2-ethylhexylcarbitol acrylate, 2-ethylhexylcarbitol methacrylate, S-S, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, N-vinyl D is a pyrrolidone or the like. Examples of the polymerizable monomer having a bifunctional group include, for example, 16-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, ethylene glycol diacrylate, and ethylene. Alcohol dimethacrylate, neopentyl glycol diacrylate, neopentyl glycol dimercapto acrylate, triethylene glycol diacrylate, triethylene glycol dimethacrylate, bisphenol A bis (propylene醯 methoxyethyl)ether, 3-methylpentanediol diacrylate, 3-methylpentanediol dimethacrylate, etc. Further, a trifunctional group-containing polymerizable monomer can be exemplified by: Hydroxymethylpropane diacrylate, trimethylolpropane trimethacrylate, pentaerythritol-acrylic sulphuric acid, pentaerythritol trimethyl acrylate, pentaerythritol tetrapropylene S 夂 g day, pentaerythritol tetramethacrylic acid Ester, pentaerythritol pentaacrylate 'pentaerythritol pentamethyl acrylate, dipentaerythritol hexaacrylate, dipenta Hexa methyl acrylic ester and the like. In the above polymerizable monomer, it is preferred to use a bifunctional group having a bifunctional group or a trifunctional group, and it is preferred to use pentaerythritol tetraacrylate vinegar or dipentaerythritol hexaacrylate for use. Dipentaerythritol six 29 317489 1377440 Acrylate is preferred. Further, it is also possible to use a polymerizable monomer having a bifunctional group or a trifunctional group, and a single-orthracene or a person. The group of polymerizable monomers having an early s-energy group can be exemplified by a cationic polymerization of a cationic monomer, such as: a base group, an acryl group, an epoxy group, an oxetan group, and a functional group. Polymerizable monomer. Butyl propyl propyl ether-containing servant private ^ / t gas base: base): 1: wm - propylene 3 with a jade emulsion based on the compound can be listed with the heart · Germany, grease, novolac type Epoxy 榭 # ^ 牛· phenol A type epoxy resin aliphatic epoxy tree _ varnish type epoxy resin, cyclic epoxy resin, heterocyclic epoxy resin, etc.. Tree glutathionamine type 'oxygen Examples of the compound of the group include, for example, bis[3-(3'ethyl p-oxy-V 4 , U, [3-(3-ethyloxetanyl) benzene, i 4 - fluorene ['3 ( 3[3-(3-ethyloxetanyl)methoxy]methyl 1 4 cone "also (ethyl oxetanyl) methoxy) cyclohexane, '4 bis [3-(3 - Ethyloxycyclohexane, tymidine, methyl hexane, ethyl acetonide butyl) methylated novolac resin, etc. When the body (1) is used alone, the polymerizable monomer (1) can be separately The amount, the radiation sensitivity 317489 30 1377440 is usually 0.1 to 20% by mass. The decane coupling agent (J) may, for example, be a methyl trisium, a methyltriethylamine, a vinyl trigas, an ethylene tris methoxy sulphur, a vinyl triethoxy sulphur , Ethyl-based triethyl ethoxylate XI Xi, Ethyl ginseng (2-methoxyethoxy) 垸 垸, 3- chloropropyl _ trimethoxy oxalate, 3- propyl propyl group - Dioxane, 3-propylmethyl-dimethoxyoxime, 3-chloropropylmethyl-diethoxyxanthine, 3-glycidoxypropyl-trioxetane , 3-glycidoxypropyl-triethoxydecane, 3-glycidyloxypropylmethyl-di-f-oxydecane, 3-mercaptopropyl-trimethoxydecane, 3-methyl Acryloxypropyl-trimethoxydecane, 3-mercaptopropenyloxypropyl-dimethoxydecane, 2-(3 4_epoxycyclohexyl)ethyl-trimethoxydecane , N-2-(N-vinylbenzylaminoethyl)_3_aminopropyl-trimethoxydecane hydrochloride, hexamethyldioxanylamine, diaminodecane, diaminopropyl -trimethoxy decane, 3-aminopropyl-trimethoxy decane, 3-aminopropyl-triethoxy decane 3_Aminopropyl fluorenyl-diethoxy φ decane, 3-aminopropyl-parade (2-methoxyethoxyethoxy)decane, 3-(2-aminoethyl)- 3-aminopropyl-trimethoxydecane, 3-(2-aminoethyl)-3-aminopropyl-decyl-dimethoxydecane, 3-ureidopropyl-trimethoxy-decane, 3-_Urylic propyl-triethoxy decane, N-aminoethyl-3-aminopropyl-trimethoxy decane, N-aminoethyl-3-aminopropylmethyl _ Methoxydecane, N-mercapto-3-aminopropyl-trimethoxyoxydecane, N-phenyl-3-monopropylpropyl-trimethoxydecane, and the like. Among them, an oxime coupling agent containing an epoxy group in this structure is preferably used. The decane coupling agent containing an epoxy group in the above structure can be listed as 317489 1377440. For example, .3-3⁄4 oxypropoxypropyl-trimethoxydecane, 3-glycidoxypropyl-two Ethoxy decane, 3-glycidoxypropylmethyl-dimethoxy oxime, 2-(3,4-epoxycyclohexyl)ethyl-trimethoxydecane, etc., preferably 2 ( An alicyclic epoxy-containing breaker coupling agent such as 3,4-epoxycyclohexyl)ethyl-trimethoxy decane. The content of the decane coupling agent (J) is preferably 0.01 to 10% by mass based on the mass fraction of the solid content of the radiation-sensitive resin composition, preferably Oi, 2 to K, and 0.2 to 1 by mass. % is better. When the heat-sensitive resin pattern is formed by using the radiation-sensitive resin composition of the present invention, the visible light transmittance of the cured resin pattern is improved, so that the transparency tends to be improved. Further, it is preferable because the adhesion between the cured resin pattern and the substrate is improved. The radiation sensitive resin composition of the present invention may contain other components such as an antioxidant, a dissolution inhibitor, a sensitizer, an ultraviolet absorber, a light stabilizer, an adhesion improver, an electron donor, etc., depending on the demand. Additions of each type. The radiation-sensitive resin composition of the present invention' is, for example, a solution of the solvent (C), 醌
合:具硬化性之鹼可溶性樹脂(4)溶於溶劑(c) 重氣化合物(B)(谷於溶劑(c)之溶液,夺酌類界召 及氟類界面活性劑(E),而調製。又,混合後, 溶劑(C)。溶液混合後,經過濾以去除固 317489 32 1377440 在使用本發明之放射線敏感性樹脂組成物形成硬化樹 脂圖案時,例如,在基板上形成由本發明之放射線敏感性 樹脂組成物所成之層,經由遮罩(mask),以放射線照射上 述之層’經曝光後,只要能顯像即可。 做為基板者可列舉如透明之玻璃板等。在上述基板 上,亦可形成TFT或CCD等電路或彩色濾光器等。 由放射線敏感性樹脂組成物所成之層,宜使用具有狹 縫狀之喷嘴的塗佈裝置塗佈。具有狹縫狀之喷嘴之塗佈裝 '置之例如:狹缝塗膜機、模頭塗膜機、簾幕流動塗膜機等。 塗佈後,加熱乾燥(預烘焙)、或在減壓乾燥後加熱, 藉由去除部分或全部之溶劑等揮發成分,形成溶劑含量減 少之放射線敏感性樹脂組成物層。又,此放射線敏感性樹 脂組成物層之厚度,例如為丨.5至5 # m左右。 其次,在放射線敏感性樹脂組成物層,經由遮罩照射 放射線。遮罩之圖案係因應以硬化樹脂之圖案為目的之圖 案而適當選擇。放射線’例如,可使用g線或丨線等光線。 放射線係以全面橫跨放射線敏感性樹脂組成物層平行照 射,例如,宜使用遮罩對準器(mask aligner)或步進器' (stepper)等照射。 如此經曝光後即顯像,顯像係將曝光後之放射線敏感 性樹脂組成物層,例如可藉接觸顯像液之方法而進行,顯 像液通常是使諸性水溶液。鹼性水溶液料使用驗性化 合物之水溶液,鹼性化合物可為無機鹼性化合物,亦可為 有機鹼性化合物。 π 317489 33 1377440 無機鹼性化合物’可列舉如:氫氧化鈉、氫氧化钟、 磷酸氫二鈉、磷酸二氫鈉、磷酸氫二銨、磷酸二氫錢'填 酸二氫鉀、矽酸鈉、矽酸鉀、碳酸鈉、碳酸鉀、碳酸氫鈉、 碳酸氫鉀、硼酸納、硼酸钟、氨等。 有機鹼性化合物,可列舉如:四甲銨氫氧化物、2_羥 基乙基三曱基銨氫氧化物、單曱基胺、二甲基胺、三甲基Combination: a hardening alkali-soluble resin (4) dissolved in a solvent (c) a heavy gas compound (B) (a solution of a solvent in the solvent (c), and a fluorine-based surfactant (E) Further, after mixing, the solvent (C). After the solution is mixed, it is filtered to remove the solid 317489 32 1377440. When the cured resin pattern is formed using the radiation-sensitive resin composition of the present invention, for example, the present invention is formed on the substrate. The layer formed of the radiation-sensitive resin composition is irradiated with radiation to the above layer via a mask. After exposure, it is sufficient to develop the image. As the substrate, a transparent glass plate or the like can be cited. A circuit such as a TFT or a CCD, a color filter, or the like may be formed on the substrate. The layer formed of the radiation sensitive resin composition is preferably coated with a coating device having a slit-like nozzle. The nozzle coating device is disposed, for example, as a slit coater, a die coater, a curtain flow coater, etc. After coating, heating and drying (prebaking), or drying under reduced pressure, By removing some or all of the solvent The volatile component is formed into a radiation sensitive resin composition layer having a reduced solvent content. Further, the thickness of the radiation sensitive resin composition layer is, for example, about 至5 to 5 #m. Next, the radiation sensitive resin composition layer The radiation is irradiated through the mask. The pattern of the mask is appropriately selected in accordance with the pattern for the pattern of the cured resin. For the radiation 'for example, light such as a g-line or a twisted wire can be used. The radiation is used to completely cross the radiation-sensitive resin. The composition layer is irradiated in parallel. For example, a mask aligner or a stepper may be used. Thus, after exposure, the image is formed by exposing the radiation-sensitive resin after exposure. The layer can be carried out, for example, by a method of contacting a developing solution, and the developing solution is usually an aqueous solution of an aqueous solution. The alkaline aqueous solution is an aqueous solution of an organic compound, and the basic compound can be an inorganic basic compound or an organic compound. Basic compound π 317489 33 1377440 Inorganic basic compound ' can be exemplified by sodium hydroxide, hydrazine hydroxide, disodium hydrogen phosphate, dihydrogen phosphate , diammonium hydrogen phosphate, dihydrogen phosphate 'potassium dihydrogen potassium, sodium citrate, potassium citrate, sodium carbonate, potassium carbonate, sodium hydrogencarbonate, potassium hydrogencarbonate, sodium borate, boric acid clock, ammonia, etc. The compound may, for example, be tetramethylammonium hydroxide, 2-hydroxyethyltrimonylammonium hydroxide, monodecylamine, dimethylamine or trimethylamine.
胺、單乙基胺、二乙基/胺、三乙基胺、單異丙基胺、二異 丙基胺、乙醇胺等。 前述之鹼性化合物可以分別單獨使用,亦可組合2種 以上使用。顯像液,通常係每100質量份顯像液含有〇 〇1 至1〇質量份之鹼性化合物,而以〇.丨至5質量份較佳。 顯像液亦可含有界面活性劑。界面活性劑可列舉如: 非離子系界面活性劑、陽離子系界面活性劑、陰離子系界 面活性劑等。 …非離子系界面活性劑可列舉如:聚環氧乙烷烷基醚、 ♦聚環氧乙炫絲It、聚環氧乙狀基芳基料聚環氧乙烧 何生物、環氧乙院/環氧丙院歲段共聚物、山梨糖醇肝脂 肪酉夂酉曰、聚ί辰氧乙烧山梨糖醇野脂肪酸醋、聚環氧乙烧山 梨糖醇脂肪酸酉旨、甘油脂肪酸醋、聚環氧乙烧脂肪酸醋、 聚環氧乙烷烷基胺等。 豳陽=子系界面活性劑可列舉如:硬脂醯胺鹽酸鹽等胺 ^月才土基二尹基銨氣化物等四級銨鹽等。 ,、☆陰離子系界面活性劑可列舉如:月桂基醇硫酸酯鈉、 /由醇石爪酸酉旨鈉等高級醇硫酸酯鹽;月桂基硫酸鈉、月桂基 317489 34 1377440 !硫酸銨等烷基硫酸鹽;十二烷基笨磺酸鈉、十二烷基萘磺 •酸鈉等烷基芳基磺酸鹽等。 . 該等之界面活性劑,可以分別單獨使用,亦可組合2 種以上使用。 σ 又,顯像液中,亦可含有有機溶劑,上述之有機溶劑 可列舉如:曱醇、乙醇等水溶性有機溶劑等。Amine, monoethylamine, diethyl/amine, triethylamine, monoisopropylamine, diisopropylamine, ethanolamine, and the like. The above-mentioned basic compounds may be used alone or in combination of two or more. The developing solution usually contains 1 to 1 part by mass of the basic compound per 100 parts by mass of the developing liquid, and preferably 〇.丨 to 5 parts by mass. The developing solution may also contain a surfactant. Examples of the surfactant include a nonionic surfactant, a cationic surfactant, and an anionic surfactant. ... nonionic surfactants can be exemplified by: polyethylene oxide alkyl ether, ♦ polyethylene oxide wire It, polyepoxy aryl aryl polyepoxide, bio-epoxy / Ethylene propylene compound aged copolymer, sorbitol liver fat 聚, poly lactic acid ethoxylated sorbitol wild fatty acid vinegar, polyepoxy sorbitan fatty acid 酉, glycerin fatty acid vinegar, poly Ethylene bromide fatty acid vinegar, polyethylene oxide alkylamine, and the like. Examples of the cation-positive surfactant include a quaternary ammonium salt such as an amine such as stearylamine hydrochloride or a quaternary ammonium salt such as a dimethicone vapor. ☆ Anionic surfactants include, for example, sodium lauryl sulfate, / higher alcohol sulfates such as sodium citrate; sodium lauryl sulfate, lauryl 317489 34 1377440, ammonium sulfate, etc. Base sulfate; alkyl aryl sulfonate such as sodium dodecyl sulfonate, sodium dodecyl naphthalene sulfonate, and the like. These surfactants may be used alone or in combination of two or more. σ Further, the developing solution may contain an organic solvent, and examples of the organic solvent include a water-soluble organic solvent such as decyl alcohol or ethanol.
將放射線敏感性樹脂組成物層接觸顯像·,液時,例如, 只要把形成放射線敏感性樹脂組成物層之基板浸潰於顯像 液中即可。藉由顯像,放射線敏感性樹脂組成物層之中, 先刖曝光中經放射線照射之放射線照射區域則溶解於顯像 液中,而未經放射線照射之放射線未照射區域,不溶解於 顯像液而殘留,並形成圖案。 _本發明之放射線敏感性樹脂組成物由於含有醌重氮化 α物(Β) ’因此,放射線敏感性樹脂組成物層與顯像液接觸 之時間即使很短’放射線照射區域也易於溶解而去除。而 且由於3有I重氮化合物(Β),放射線敏感性樹脂組成物 層即使與顯像液接觸之時間變長,放射線未照射區域並不 因而溶解於顯像液而消失。 八顯像後,通常係經水洗、乾燥。乾燥之後,再將所得 之全面或部分圖案以放射線照射。其中所照射之放射線, 以紫外線或深紫外線為佳,每單位面積之照射量,以比先 前曝光之照射量更多者為佳。 如此形成的圖案,從提高硬化樹脂圖案之耐熱性、耐 ’谷劑性等觀點而言,較佳再經加熱處理(後烘焙)。加熱係 317489 35 丄377440 ,將跨越全面放射線照射後之基板以加熱板、清淨爐等加熱 裝置的加熱方法進行。加熱溫度,通常是15〇乞至25〇它, 較佳為1801至2401,加熱時間,通常是5分鐘至12〇 刀雀里,較佳是15分鐘至90分鐘。藉由加熱,使圖案硬化, 而形成硬化樹脂.圖案。 如依本發明’可提供對不鏽鋼基材有良好沾濕性之放 射線敏感性樹脂組成物。本發明之放射線敏感性樹脂組成 鲁物,因對不鏽鋼基材之沾濕性良好,所以能提高具有狹縫 狀喷嘴之塗佈裝置的塗佈性。 使用本發明之放射線敏感性樹脂組成物所形成之硬化 樹脂圖案’例如,可適用於構成TFT型液晶顯示裝置之絕 、’彖膜有機EL元件之絕緣膜,光間隙子(ph〇t〇 Spacer) 調距器、反射型TFT基板所使用之擴散反射板、液晶配向 用突起、CCD之保護膜等方面的硬化樹脂圖案。 實施例: 擊 以下’係以貫施例為基準而詳細說明本發明,但本發 明之範圍當然並不侷限於此等實施例。 製造例1 :樹脂A1 在褒有攪拌機、冷凝管及溫度計之300 mL四口燒瓶 中’放入做為溶劑的乳酸乙酯36 g、3-乙氧基丙酸乙酯146 g、作為聚合起始劑之偶氮雙異丁腈2.2g、以及再放入以 下之單體’於氮氣氣流下,内溫一面保持在100至110 °C, 一面搜拌3小時並進行反應,得到含有樹脂A1之溶液,此 樹脂A1之聚苯乙烯換算重量平均分子量為7, 9〇〇。 36 317489 1377440 甲基丙婦酸 ' 10.8 g 3-乙基-3-曱基丙烯醯氧基曱基氧雜環丁烷36 9忌 • N-環己基馬來醯亞胺 31. 4 g 在此’聚笨乙埽換算重量平均分子量(Mw)之測定,係 使用GPC法,在以下之條件下進行。 裝置·· HLC-8120 GPC(東曹(股)製)When the radiation sensitive resin composition layer is brought into contact with the development liquid, for example, the substrate on which the radiation sensitive resin composition layer is formed may be immersed in the developing liquid. In the radiation-sensitive resin composition layer, the radiation-irradiated area irradiated by the radiation in the first exposure is dissolved in the developing liquid, and the radiation-exposed area which is not irradiated with the radiation is not dissolved in the image. The liquid remains and forms a pattern. The radiation-sensitive resin composition of the present invention contains yttrium-difluoride α (Β). Therefore, the time during which the radiation-sensitive resin composition layer is in contact with the developing solution is short, and the radiation-irradiated region is easily dissolved and removed. . Further, since 3 has a I diazonium compound (Β), the radiation sensitive resin composition layer becomes long in contact with the developing solution, and the radiation non-irradiated region does not dissolve in the developing solution and disappears. After eight imaging, it is usually washed and dried. After drying, the resulting full or partial pattern is irradiated with radiation. The radiation to be irradiated is preferably ultraviolet or deep ultraviolet rays, and the amount of irradiation per unit area is preferably more than the exposure amount of the previous exposure. The pattern thus formed is preferably subjected to heat treatment (post-baking) from the viewpoint of improving the heat resistance and the resistance of the cured resin pattern. The heating system 317489 35 丄377440 is used to heat the substrate after the irradiation of the entire radiation by a heating method such as a heating plate or a cleaning furnace. The heating temperature is usually 15 Torr to 25 Torr, preferably 1801 to 2401, and the heating time is usually 5 minutes to 12 minutes, preferably 15 minutes to 90 minutes. The pattern is hardened by heating to form a hardened resin pattern. According to the present invention, a radiation-sensitive resin composition having good wettability to a stainless steel substrate can be provided. Since the composition of the radiation-sensitive resin of the present invention is excellent in wettability to a stainless steel substrate, the coating property of a coating apparatus having a slit nozzle can be improved. The hardened resin pattern formed by using the radiation-sensitive resin composition of the present invention can be applied, for example, to an insulating film of a thin film organic EL element constituting a TFT-type liquid crystal display device, and a light spacer (ph〇t〇Spacer) A cured resin pattern of a diffuser, a diffuse reflector used for a reflective TFT substrate, a liquid crystal alignment protrusion, a CCD protective film, or the like. EXAMPLES The following is a detailed description of the present invention based on the following examples, but the scope of the present invention is of course not limited to such embodiments. Production Example 1: Resin A1 In a 300 mL four-necked flask equipped with a stirrer, a condenser, and a thermometer, 36 g of ethyl lactate and 146 g of ethyl 3-ethoxypropionate were placed as a solvent. The initiator azobisisobutyronitrile 2.2g, and the following monomer was placed under the nitrogen gas stream, the internal temperature was maintained at 100 to 110 ° C, and the mixture was mixed for 3 hours and reacted to obtain a resin A1. The solution A, the polystyrene-equivalent weight average molecular weight of the resin A1 was 7,9 。. 36 317489 1377440 Methyl acetoacetate ' 10.8 g 3-ethyl-3-mercapto propylene fluorenyloxy oxetane 36 9 boge • N-cyclohexylmaleimide 31. 4 g The measurement of the weight average molecular weight (Mw) converted to polystyrene was carried out under the following conditions using a GPC method. Device·· HLC-8120 GPC (Tosoh Co., Ltd.)
管柱:TSK-GELG4_HXL+TSK-GELG2〇〇〇HXL ;直列連接) 鲁管柱溫度:40°C 溶媒:THF 流速:1. 〇 mL/min 注入量:5 0 v L 檢測器:RI 測定試料濃度:〇. 6質量% (溶劑:THF) 校正用標準物質:TSK標準聚苯乙烯F-40、F-4、F-1、 A-2500、A-500(東曹(股)製) _實施例1 將下述各成分於23°C混合後,添加相當於組成物全體 2〇〇 ppm之作為矽酮類界面活性劑(d)成分的別8400(聚醚 •改質矽酮油;信越矽酮(股)製)、相當於組成物全體1〇〇 ppm 之作為氟類界面活性劑(E)成分的E-1830((2, 2, 3, 3, 4, 4, 5’5’6, 6, 7, 7, 8, 8, 9, 9, 9-十七氟壬基)環氧乙烷;泰金化成 品販賣(股)製)。 通過孔徑1. 〇 β m之聚四氟乙烯製筒狀濾器並加壓過 遽’可得到放射線敏感性樹脂組成物1之濾液。所得之放 317489 37 1377440 射線敏感性樹脂組成物中之溶劑(c)含量為72. 5%,溶劑組 成比為乳酸乙酯:3-乙氧基丙酸乙酯:乙酸丁酯:丙一·醉 單曱醚=16 : 60 : 20 : 4。 含樹脂A1之溶液333質量份(固形份換算:1〇〇質量份) 式(1)所示化合物 20 質量份Column: TSK-GELG4_HXL+TSK-GELG2〇〇〇HXL; in-line connection) Lu column temperature: 40°C Solvent: THF Flow rate: 1. 〇mL/min Injection volume: 5 0 v L Detector: RI determination sample Concentration: 〇. 6 mass% (solvent: THF) Standard material for calibration: TSK standard polystyrene F-40, F-4, F-1, A-2500, A-500 (made by Tosoh Co., Ltd.) _ Example 1 After mixing the following components at 23° C., an additional 8400 (polyether/modified oxime oil) as an anthrone-based surfactant (d) component corresponding to 2 〇〇ppm of the entire composition was added; E-1830 ((2, 2, 3, 3, 4, 4, 5'5) as a fluorine-based surfactant (E) equivalent to 1 〇〇ppm of the total composition of the composition. '6, 6, 7, 7, 8, 8, 9, 9, 9-heptadecafluorodecyl) ethylene oxide; Taijin finished product sales (stock) system. The filtrate of the radiation-sensitive resin composition 1 was obtained by passing through a tubular filter of polytetrafluoroethylene having a pore diameter of 1. 〇 β m and pressurizing it through 遽'. The obtained solvent 317489 37 1377440 The solvent (c) content in the radiation sensitive resin composition is 72.5%, the solvent composition ratio is ethyl lactate: 3-ethoxypropionate ethyl ester: butyl acetate: C1 Drunk monoterpene ether = 16: 60: 20: 4. 333 parts by mass of the solution containing the resin A1 (in terms of solid content: 1 part by mass), the compound represented by the formula (1), 20 parts by mass
Adeka optomer-SP-172(光陽離子聚合觸媒;旭電化工業 2質量份Adeka optomer-SP-172 (photocationic polymerization catalyst; Asahi Chemical Industry 2 parts by mass)
Sun Aid SI-100L(熱陽離子聚合觸媒;三新化學工業(股) 製) 2 質量份 矽烷:信越化學工業(股)製) 乳酸乙酯 3-乙氧基丙酸乙酯 乙酸丁酯 丙二醇單甲基醚 KBM-303(石夕烧偶合劑;y? - (3, 4-環氧環己基)乙基三甲氧基 3質量份 8. 1質量份 16. 2質量份 67質量份 13.4質量份 Φ OQ4Sun Aid SI-100L (thermal cationic polymerization catalyst; manufactured by Sanshin Chemical Industry Co., Ltd.) 2 parts by mass of decane: Shin-Etsu Chemical Co., Ltd.) Ethyl lactate 3-ethoxypropionate ethyl butyl acetate propylene glycol Monomethyl ether KBM-303 (Shi Xi siu coupling agent; y? - (3, 4-epoxycyclohexyl) ethyl trimethoxy 3 parts by mass of 8. 1 part by mass of 16. 2 parts by mass of 67 parts by mass 13.4 mass Parts Φ OQ4
⑴ (式中,Q4表示(1-1)所示之取代基 〇(1) (wherein Q4 represents a substituent represented by (1-1) 〇
II (Μ) 317489 38 1377440 實施例2 除了 E-1830改成添加相當於組成物全體之loo ppm 的 E-5844(縮水甘油基 2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8, 8, 9,9-十六敗壬基謎;泰金化成品販賣(株)製)之外,其餘與 實施例1相同操作,得到放射線敏感性樹脂組成物2。 比較例1 除了不使用氟類界面活性劑以外,其餘與實施例1同 樣操作,得到放射線敏感性樹脂組成物3。 比較例2 除了將SH 8400改成300 ppm ’且不使用氟類界面活 性劑之外,其餘與實施例丨同樣操作,得到放射線敏感性 樹脂組成物4。 <流動性之測定例> 將上述實施例及比較例中所得之放射線敏感性樹脂組 成物,在水平設置之SUS 630板上(尺寸:1〇〇 mmx 2〇〇随 x 10 mm、表面粗度:一方向調整成相當於JIS B 〇659 12. 5-S 之髮絲面(hair-line finish)),由巴氏滴管(5 一 3 /4” ;費雪(Fischer)公司製),滴入10# L,滴後馬上將 §玄SUS630板豎立成垂直方向,此時,板之髮絲線相對於液 滴之滴入方向成為垂直狀。 測定該組成物到停止流動為止之放射線敏感性樹脂組 成物的流動距離,當做流動距離。測定結果如表1所示。 又,液體流動之際,在髮絲線上液體滯留丨〇秒鐘以上 之流動為暫時停止者則判定為流動性x ,液體並未停止而 317489 39 1377440 滑順流動者為流動性〇,流動性良好者判定對不鏽鋼基材 之沾濕性良好。 判定結果如表1所示。 表1II (Μ) 317489 38 1377440 Example 2 In addition to E-1830, E-5844 (glycidyl 2, 2, 3, 3, 4, 4, 5, 5, 6) was added to add loo ppm equivalent to the entire composition. , the same operation as in Example 1 except for the use of the same as in Example 1, to obtain a radiation-sensitive resin composition, except for the hexagram of the hexagram product; 2. Comparative Example 1 A radiation sensitive resin composition 3 was obtained in the same manner as in Example 1 except that the fluorine-based surfactant was not used. Comparative Example 2 A radiation-sensitive resin composition 4 was obtained in the same manner as in Example 除了 except that the SH 8400 was changed to 300 ppm' and the fluorine-based surfactant was not used. <Measurement Example of Fluidity> The radiation-sensitive resin composition obtained in the above Examples and Comparative Examples was placed on a horizontally placed SUS 630 plate (size: 1 〇〇 mm x 2 〇〇 with x 10 mm, surface) Thickness: One direction is adjusted to correspond to JIS B 〇659 12. 5-S hair-line finish), by Papillon dropper (5 - 3 / 4"; made by Fischer ), 10# L was dropped, and the SUS SUS630 plate was erected vertically in the vertical direction. At this time, the hairline of the plate became vertical with respect to the dropping direction of the liquid droplets. The radiation of the composition until the flow stopped was measured. The flow distance of the sensitive resin composition is regarded as the flow distance. The measurement results are shown in Table 1. In addition, when the liquid flows, the liquid stays on the hairline for more than a second, and the flow is temporarily stopped. x, liquid did not stop and 317489 39 1377440 smooth flow of the flow is 流动, the fluidity is good, the wettability of the stainless steel substrate is good. The judgment results are shown in Table 1. Table 1
實施例1 實施例2 比較例1 比較例2 (D)成分 SH 8400 200 200 200 300 (E)成分 E-1830 100 E-5844 100 判定 流動距離 80 82 75 74 流動性 〇 〇 X XExample 1 Example 2 Comparative Example 1 Comparative Example 2 (D) component SH 8400 200 200 200 300 (E) Component E-1830 100 E-5844 100 Determination Flow distance 80 82 75 74 Fluidity 〇 〇 X X
40 31748940 317489
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